Interface morphology-based real-time control of heavily-antimony-doped single crystal silicon growth system and method

Abstract

The present application relates to a kind of heavy doping antimony single crystal silicon growth system based on interface morphology real-time regulation and its method, and the technical field of semiconductor single crystal silicon crystal bar preparation, the method includes using infrared thermal imager real-time acquisition growth interface thermal field image;Through image processing algorithm, solid-liquid interface isotheral is identified and real-time curvature radius R real , define negative value when concave to melt;R real With the target range set based on crystal diameter D [‑3D,‑1.5D] is compared;If R real >‑1.5D then improve pulling speed and / or heater power, if R real <‑3D then reduce pulling speed and / or heater power, if in range then maintain parameter, form closed loop control.It overcomes the open-loop control failure problem caused by thermal field drift in the process of crystal growing, through quantization curvature target and dynamic bidirectional adjustment, actively maintain interface always in micro-concave shape, completely eliminates the center impurity channeling defect of heavy doping antimony single crystal silicon, makes radial resistivity uniformity less than 5%, significantly improves product yield.

Description

Technical Field

[0001] This invention relates to the field of semiconductor single-crystal silicon rod preparation technology, specifically to a heavily antimony-doped single-crystal silicon growth system and method based on real-time control of interface morphology. Background Technology

[0002] Heavy antimony-doped single-crystal silicon is widely used in semiconductor power devices and integrated circuit epitaxial substrates due to its extremely low resistivity and excellent electrical properties. However, in <111> A serious technical challenge that has long plagued the industry is the Czochralski (CZ) method for preparing heavily antimony-doped single-crystal silicon: due to the extremely small equilibrium segregation coefficient of antimony in silicon (approximately 0.023), antimony impurities readily segregate and accumulate at the solid-liquid growth interface during crystal growth. When the growth interface morphology is convex towards the melt, it is subject to… <111> Due to the inherent "small facet effect" of the crystal orientation, antimony impurities will abnormally accumulate in the central region of the crystal ingot, forming a vertically penetrating "impurity channel" defect. This defect manifests as an abnormal color difference circle in the central region on the subsequently cut silicon wafer, and causes the resistivity of the central region to be significantly lower, severely damaging the uniformity of the device's electrical performance. This is a fatal defect that is completely unacceptable to customers.

[0003] To eliminate the aforementioned "impurity channel" defect, existing technologies (such as publication number CN114381799A and related prior art documents 1 and 2) typically propose the following improvements: 1. Changing the traditional constant-speed crystal pulling to variable-speed crystal pulling; 2. Increasing the crystal pulling gap to obtain a larger longitudinal temperature gradient; 3. Qualitatively describing the growth interface as concave rather than convex. However, the aforementioned existing technologies have the following fundamental defects in practical production applications: I. Open-loop control, lacking a real-time feedback mechanism. All process parameters in existing technologies (such as preset pulling speed decline curves and temperature setpoints) are pre-set static parameters. However, during actual crystal pulling processes that last for tens of hours, the thermal environment within the single-crystal furnace undergoes slow and irreversible drift (e.g., as the silicon material solidifies, the melt level gradually decreases; the crucible needs to continuously rise to maintain the melt level; the heater ages at high temperatures, etc.). These dynamic disturbances mean that the preset "optimal parameters" simply cannot maintain the interface in the ideal micro-concave morphology throughout the actual growth process.

[0004] Second, insufficient control precision and lack of quantifiable targets. Existing technologies only provide qualitative descriptions of "changing a convex shape to a concave shape," without giving quantifiable interface morphology control targets (such as specific curvature radius ranges or absolute curvature values). This leads to a situation where, in actual operation, the judgment and control of interface morphology heavily relies on the operator's personal experience, resulting in extremely poor reproducibility between different batches and different furnaces, failing to meet the yield requirements for large-scale mass production.

[0005] Third, the dynamic stability issue remains unresolved, indicating a technological bias. Reference document 2 states that both "flat interfaces and micro-concave interfaces" can eliminate impurity channels. However, in reality, flat interfaces are in a critically unstable state during crystal growth and are extremely difficult to maintain stably. Even if initially set as micro-concave interfaces, they will gradually transform into convex interfaces in the later stages due to the aforementioned thermal field drift factors. Existing technology does not provide any dynamic control methods for actively maintaining micro-concave interfaces, exhibiting a technological bias that "static configuration is sufficient to maintain micro-concave interfaces." Summary of the Invention

[0006] This invention addresses the shortcomings of existing technologies by providing a heavy antimony-doped single-crystal silicon growth system and method based on real-time interface morphology control. It overcomes the open-loop control failure problem caused by thermal field drift during crystal growth. By quantifying the curvature target and dynamically adjusting it bidirectionally, it actively maintains the interface in a micro-concave morphology, completely eliminating the central impurity channel defect in heavy antimony-doped single-crystal silicon, making the radial resistivity uniformity less than 5%, and significantly improving the product yield.

[0007] The above-mentioned technical problems of the present invention are mainly solved by the following technical solutions: A method for growing heavily antimony-doped single-crystal silicon based on real-time control of interface morphology includes the following steps: S1: An infrared thermal imager is set up inside the single crystal furnace, with the lens aimed at the solid-liquid interface area, to continuously acquire thermal field images of the growth interface at a fixed frequency.

[0008] S2: The controller receives the thermal field image, identifies the solid-liquid interface isotherm using an image processing algorithm, and calculates the real-time radius of curvature R of the isotherm using a curve fitting method. real The radius of curvature is defined as negative when the interface is concave to the melt and positive when it is convex to the melt.

[0009] S3: The real-time radius of curvature R real With respect to the preset target radius of curvature [R] min R max The target radius of curvature is compared; wherein, the range of the target radius of curvature is set according to the crystal diameter D as: R min =-3D, R max =-1.5D.

[0010] S4: Dynamically adjust process parameters based on comparison results, specifically including: If R real If the value is greater than -1.5D, it is determined that the interface is too convex, and the controller outputs a command to increase the pulling speed and / or increase the heater power.

[0011] If R realIf the depth is less than 3D, it is determined that the interface is too concave, and the controller outputs a command to reduce the pulling speed and / or reduce the heater power.

[0012] If R real If the interface is within the range of [-3D, -1.5D], it is determined that the interface shape meets the target, and the current process parameters are maintained.

[0013] Repeat steps S1 to S4 to form a closed-loop control, so as to dynamically maintain the growth interface in a micro-concave morphology throughout the constant diameter growth stage.

[0014] Preferably, in step S4, the increment of increasing the pulling speed is 0.05 to 0.1 mm / min, and the increment of increasing the heater power is 1 to 3% of the current power; the adjustment step size of decreasing the pulling speed and decreasing the heater power corresponds to the step size when increasing.

[0015] Preferably, in step S1, the acquisition frequency of the infrared thermal imager is not less than 1 frame / second; in step S2, the image processing algorithm includes an edge detection algorithm and a least squares fitting algorithm.

[0016] Preferably, when the crystal diameter D is 200 mm, the target radius of curvature range [-3D, -1.5D] corresponds to -300 mm to -600 mm.

[0017] Preferably, the method is applied to <111> During the constant-diameter growth stage of antimony-doped monocrystalline silicon, the micro-concave morphology is dynamically maintained to suppress central impurity channel defects caused by the extremely small segregation coefficient of antimony and the small planar effect.

[0018] A heavy antimony-doped single crystal silicon growth system based on real-time control of interface morphology includes a single crystal furnace body, which contains a melt, crystal, growth interface, crystal pulling mechanism, infrared thermal imager, controller and heater.

[0019] The crystal pulling mechanism is located above the melt and includes a servo motor for pulling the crystal.

[0020] An infrared thermal imager is positioned above and to the side of the melt through an observation window, with the lens aimed at the solid-liquid interface area, to acquire real-time thermal field images of the growth interface.

[0021] The controller is electrically connected to the infrared thermal imager, the crystal-driving mechanism, and the heater, respectively. The controller includes an image processing module for receiving thermal field images, identifying solid-liquid interface isotherms, and calculating the real-time radius of curvature R. real The radius of curvature of the concave melt is defined as negative.

[0022] The comparison module is used to compare the real-time radius of curvature R. real With respect to the preset target radius of curvature [R]min ,R max ] for comparison, where R min =-3D, R max =-1.5D, where D is the crystal diameter.

[0023] A control signal generation module is used to generate control commands based on the result of the comparison module.

[0024] When R real When the pull speed is greater than -1.5D, instructions to increase the pulling speed and / or increase the heater power are sent to the crystal pulling mechanism and / or the heater.

[0025] When R real When the temperature is below 3D, instructions to reduce the pulling speed and / or reduce the heater power are generated and sent to the crystal pulling mechanism and / or the heater.

[0026] When R real When within [-3D, -1.5D], generate instructions that maintain the current parameters.

[0027] Preferably, the controller is a combination of a PLC and an industrial computer; the acquisition frequency of the infrared thermal imager is not less than 1Hz.

[0028] Preferably, the heater includes a main heater and an optional auxiliary heater, and the control signal generation module can independently or collaboratively control the power output of the main heater and the auxiliary heater.

[0029] Preferably, the image processing module uses edge detection combined with a least squares fitting algorithm to calculate the real-time radius of curvature R. real .

[0030] Preferably, the system is used to perform a method for growing heavily antimony-doped single crystal silicon based on real-time control of interface morphology. During the crystal pulling process, which lasts for tens of hours, it overcomes thermal field drift and dynamically maintains the growth interface in a micro-concave morphology, so as to completely eliminate the defects of the heavily antimony-doped impurity channels and make the radial resistivity uniformity less than 5%.

[0031] The present invention can achieve the following effects: This invention provides a heavily antimony-doped single-crystal silicon growth system and method based on real-time interface morphology control, which has the following significant advantages and innovative breakthroughs compared with the prior art: I. Creative Breakthrough: First-ever Construction of Closed-Loop Feedback Control Logic. Abandoning the open-loop control mode of existing technologies that rely solely on preset parameters, this system is the first to apply a closed-loop control logic of "real-time curvature monitoring—proportional range determination—dynamic bidirectional adjustment" to the interface control of heavily antimony-doped monocrystalline silicon. During the constant-diameter growth stage, which lasts for tens of hours, the system collects the interface thermal field and calculates the curvature in real time at high frequency (e.g., 1Hz), actively combating thermal field drift and ensuring that the interface morphology remains under control throughout the process.

[0032] II. Eliminating Technical Bias: Replacing Static Preset with Dynamic Maintenance. Comparative data from examples and comparative studies confirm that even with an initial concave interface, static open-loop control will cause the interface to become convex due to thermal field drift in the later stages of crystal production, leading to the re-emergence of impurity channels; static configuration alone cannot maintain the micro-concave morphology. This invention breaks the technical bias of "static configuration is sufficient," proving through real-time feedback and dynamic fine-tuning that only a "dynamically maintained micro-concave interface" can completely eliminate impurity channels along the entire length of the crystal ingot.

[0033] III. Achieving Quantitative Control: Proposing a quantified curvature target function. For the first time, a quantitative proportional relationship between the growth interface curvature radius and the crystal diameter was proposed and defined, setting the target curvature radius range to [-1.5D, -3D] (negative values ​​represent concave melt). This quantitative indicator transforms the fuzzy concept of "micro-concave interface" into a calculable, comparable, and reproducible precise control target, completely eliminating reliance on operational experience and ensuring high consistency across different batches of products.

[0034] IV. Significantly Improved Yield and Electrical Performance Uniformity. By adopting a closed-loop control system and method, the impurity channel defect rate of the entire crystal ingot has been reduced from over 60% in existing technologies to 0% (no channel defects in the entire ingot). Simultaneously, the radial resistivity uniformity (RRG) between the center and edge of the silicon wafer is significantly improved, with deviations controlled within a stringent 5%. This effectively meets the stringent requirements of high-end semiconductor devices for the electrical performance uniformity of heavily antimony-doped substrates, demonstrating extremely high industrial application value and economic benefits. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the closed-loop control system structure of the present invention.

[0036] Figure 2 This is a schematic diagram of different growth interface morphologies and their radii of curvature according to the present invention.

[0037] Figure 3 This is a flowchart of the method of the present invention.

[0038] In the figure: 1. Single crystal furnace body, 2. Heater, 3. Crystal pulling mechanism, 4. Infrared thermal imager, 5. Controller, 6. Crystal, 7. Growth interface, 8. Melt. Detailed Implementation

[0039] The technical solution of the invention will be further described in detail below through embodiments and in conjunction with the accompanying drawings.

[0040] Example: Figure 1 , Figure 2 and Figure 3 As shown, a method for growing heavily antimony-doped single crystal silicon based on real-time control of interface morphology is described, with an 8-inch (D=200mm) silicon crystal. <111> Taking the preparation of heavily antimony-doped single-crystal silicon with specific crystal orientation as an example, the process includes the following steps: S1: Real-time acquisition of growth interface images. An infrared thermal imager (preferably FLIR A70) is installed inside a 28-inch thermal zone single crystal furnace, with the lens mounted on the observation window above the side of the furnace body, aimed at the solid-liquid interface area. Thermal zone images of the growth interface are continuously acquired at a fixed frequency of 1 frame / second (1 Hz).

[0041] S2: Calculate the real-time radius of curvature R of the growth interface. real The controller (PLC + industrial computer architecture) receives thermal field images transmitted from the infrared thermal imager and identifies isotherms at the solid-liquid interface using image processing algorithms. Specifically, the image processing algorithm uses edge detection to extract isotherm contours and employs least squares fitting to curve fit the isotherms, calculating the real-time radius of curvature R of the isotherms. real Wherein, the radius of curvature R is defined as negative when the interface is concave to the melt, and positive when it is convex to the melt. Since this invention aims to maintain a slightly concave interface, the target R... real It should be a negative value.

[0042] S3: Comparison and judgment. The real-time radius of curvature R calculated in step S2 is compared and judged. real With respect to the preset target radius of curvature [R] min , R max The target radius of curvature is determined based on the crystal diameter D, following the quantization relationship: R min = -3D, R max = -1.5D. In this embodiment, the crystal diameter D is 200mm, so the target radius of curvature range is [-600mm, -300mm].

[0043] S4: Dynamically adjust process parameters. Based on the comparison results of S3, the controller automatically generates control commands and executes dynamic adjustments: (1) If R real >-1.5D (i.e., R) real >-300mm, for example, R real(If the value is -250mm and the absolute value of the negative value decreases, it indicates that the interface is too convex, posing a risk of impurity channel formation.) The controller outputs commands to increase the pulling speed (increment by 0.05–0.1 mm / min) and / or increase the heater power (increment by 1–3% of the current power). By increasing the pulling speed and / or heating power, the temperature gradient at the solid-liquid interface is changed, forcing the interface to become concave.

[0044] (2) If R real <-3D (i.e., R) real <-600mm, the absolute value of the negative value increases, indicating that the interface is too concave, which may lead to excessive crystal stress and unstable pulling speed: The controller outputs commands to reduce the pulling speed and / or reduce the heater power, with the step size corresponding to the increase.

[0045] (3) If R real Within the range of [-3D, -1.5D] (i.e., between -300mm and -600mm): the interface morphology is deemed to meet the target, and the current process parameters are maintained. The system repeats steps S1 to S4 to form a closed-loop control, dynamically maintaining the growth interface in a slightly concave morphology throughout the constant diameter growth stage.

[0046] Initial process parameter settings: Silicon melting point: 1414℃ (reference); Melt temperature: 1420~1450℃ (infrared thermometry); Furnace pressure: 22 Torr (argon atmosphere); Argon flow rate: 95 sLpm; Crucible rotation speed: 13 rpm (counterclockwise); Crystal rotation speed: 17 rpm (clockwise); Initial pulling speed: 0.6 mm / min (starting from the constant diameter stage); Pulling speed adjustment step: 0.05 mm / min / time; Heater power adjustment step: 2% / time (relative to the current power); Example of dynamic regulation process: In the early stage of isodiameter growth, R real The initial parameters were maintained at approximately -450 mm, within the target range. When the rod length reached approximately 500 mm, thermal field drift occurred due to the drop in melt level, and R... real Gradually rising to -250mm. The controller determines R... real >-1.5D (-300mm), the interface is slightly convex, and the drawing speed is automatically increased from 0.6 mm / min to 0.65 mm / min, and the heater power is increased by 2%. After 3 minutes of adjustment, R real The system recovered to -350mm, entering the target range, and gradually reduced the pull speed to 0.62 mm / min while stabilizing power. Throughout the constant diameter process thereafter, the system continuously and automatically fine-tuned at a frequency of 1Hz. real It consistently fluctuates between -320mm and -580mm.

[0047] Results: Three silicon wafers were taken from each of the three sections of the entire crystal ingot: the beginning (0-300mm), the middle (300-600mm), and the end (600-900mm). After CP etching, they were observed under strong light: all silicon wafers showed no solid circles with color difference at the center, indicating the absence of "impurity channels". Resistivity mapping tests showed that the center-to-edge resistivity deviation (RRG) was <5%, with no low-resistivity areas in the center. The overall impurity channel defect rate was 0%.

[0048] A heavy antimony-doped single crystal silicon growth system based on real-time control of interface morphology includes a single crystal furnace body, inside which are a crucible and a melt 8 located in the crucible, a growing crystal 6, a solid-liquid growth interface 7, a crystal pulling mechanism 3, an infrared thermal imager 4, a controller 5, and a heater 2.

[0049] The crystal pulling mechanism 3 is located above the melt 8 and includes a servo motor and a seed crystal pulling shaft for pulling the crystal 6.

[0050] Heater 2 is arranged around the outside of the crucible and includes a main heater and an optional auxiliary heater for providing heat to the melt.

[0051] An infrared thermal imager 4 is positioned above the side observation window of the melt 8, with its lens aimed at the solid-liquid growth interface 7 region. Its acquisition frequency is not less than 1 Hz, and it is used to acquire thermal field images of the growth interface 7 in real time.

[0052] The controller 5 is electrically connected to the infrared thermal imager 4, the servo motor of the crystal-drawing mechanism 3, and the heater 2. The controller 5 is a combination of a PLC and an industrial computer, and internally includes: The image processing module receives images from the thermal imager, uses edge detection combined with a least-squares fitting algorithm to identify isotherms at the solid-liquid interface, and calculates the real-time radius of curvature R. real .

[0053] The comparison module will R real With the preset [R] min , R max Compare, where R min =-3D, R max ==1.5D, where D is the crystal diameter.

[0054] Control signal generation module: Generates instructions based on the comparison result. When R real When R > -1.5D, instructions to increase the pulling speed and / or increase the heater power are sent to the crystal pulling mechanism 3 and / or the heater 2; when R real When the current range is <-3D, commands to reduce the pulling speed and / or reduce the heater power are generated; when it is within the range, the current parameters are maintained. The control signal generation module can independently or collaboratively control the power output of the main heater and the auxiliary heater.

[0055] During the crystal pulling process, which lasts for tens of hours, this system can overcome thermal field drift and dynamically maintain the growth interface 7 in a micro-concave shape, thereby completely eliminating the defects in the pipeline with heavy antimony doping.

[0056] Comparative Example: Open-Loop Control (No Closed-Loop Feedback) To demonstrate the inventiveness of the closed-loop control and quantification target of this invention, this comparative example uses the exact same initial process parameters and equipment as the embodiment, but close-loop feedback control is turned off (i.e., real-time feedback adjustment from S2 to S4 is not performed), and open-loop growth is performed only according to the preset fixed pulling speed curve (0.6→0.55→0.5 mm / min).

[0057] Results of testing: Crystal head (0-200mm): The interface is initially slightly concave, with no impurity channels.

[0058] In the middle of the crystal rod (200-600mm): due to the influence of thermal field drift, the interface gradually becomes flat or even slightly convex, and a slight central color difference appears, with the resistivity being about 8% lower in the center.

[0059] At the tail of the crystal rod (600-900mm): the interface is clearly convex towards the melt, forming a distinct central color difference circle, and the resistivity is more than 15% lower at the center.

[0060] Overall defect rate of impurities in the pipeline: approximately 65%.

[0061] In summary, the comparative examples and methods for the growth of heavily antimony-doped single crystal silicon based on real-time interface morphology control demonstrate that even with an initial concave interface, open-loop control cannot maintain the interface morphology due to thermal field drift, and impurity channels inevitably reappear in the middle and tail sections. However, by introducing a closed-loop logic of "real-time curvature monitoring - proportional range determination - dynamic bidirectional adjustment," the curvature radius is strictly limited to the quantization range of [-1.5D, -3D], completely eliminating technical bias and achieving high yield and high uniformity in the preparation of heavily antimony-doped single crystal silicon.

[0062] The above description is only a specific embodiment of the present invention, but the structural features of the present invention are not limited thereto. Any changes or modifications made by those skilled in the art within the scope of the present invention are covered by the patent scope of the present invention.

Claims

1. A method for growing heavily antimony-doped single crystal silicon based on real-time control of interface morphology, characterized in that, Includes the following steps: S1: An infrared thermal imager is set up inside the single crystal furnace, with the lens aimed at the solid-liquid interface area, and the thermal field image of the growth interface is continuously acquired at a fixed frequency. S2: The controller receives the thermal field image, identifies the solid-liquid interface isotherm using an image processing algorithm, and calculates the real-time radius of curvature R of the isotherm using a curve fitting method. real The radius of curvature is defined as negative when the interface is concave to the melt and positive when it is convex to the melt. S3: The real-time radius of curvature R real With respect to the preset target radius of curvature [R] min R max The target radius of curvature is compared; wherein, the range of the target radius of curvature is set according to the crystal diameter D as: R min =-3D, R max =-1.5D; S4: Dynamically adjust process parameters based on comparison results, specifically including: If R real If the value is greater than -1.5D, it is determined that the interface is too convex, and the controller outputs a command to increase the pulling speed and / or increase the heater power. If R real If the interface is too concave (<-3D), the controller outputs a command to reduce the pulling speed and / or reduce the heater power. If R real If the interface shape is within the range of [-3D, -1.5D], it is determined that the interface shape meets the target, and the current process parameters are maintained; Repeat steps S1 to S4 to form a closed-loop control, so as to dynamically maintain the growth interface in a micro-concave morphology throughout the constant diameter growth stage.

2. The method for growing heavily antimony-doped single crystal silicon based on real-time interface morphology control according to claim 1, characterized in that: In step S4, the increment of increasing the pulling speed is 0.05 to 0.1 mm / min, and the increment of increasing the heater power is 1 to 3% of the current power; the adjustment step size of decreasing the pulling speed and decreasing the heater power corresponds to the step size when increasing.

3. The method for growing heavily antimony-doped single crystal silicon based on real-time interface morphology control according to claim 1, characterized in that: In step S1, the acquisition frequency of the infrared thermal imager is not less than 1 frame / second; in step S2, the image processing algorithm includes an edge detection algorithm and a least squares fitting algorithm.

4. The method for growing heavily antimony-doped single crystal silicon based on real-time interface morphology control according to claim 1, characterized in that: When the crystal diameter D is 200mm, the target radius of curvature range [-3D, -1.5D] corresponds to -300mm to -600mm.

5. The method for growing heavily antimony-doped single crystal silicon based on real-time interface morphology control according to claim 1, characterized in that: The method is applied to <111> During the constant-diameter growth stage of antimony-doped monocrystalline silicon, the micro-concave morphology is dynamically maintained to suppress central impurity channel defects caused by the extremely small segregation coefficient of antimony and the small planar effect.

6. A heavily antimony-doped single-crystal silicon growth system based on real-time interface morphology control, characterized in that: The single crystal furnace body includes a melt (8), a crystal (6), a growth interface (7), a crystal pulling mechanism (3), an infrared thermal imager (4), a controller (5), and a heater (2). The crystal pulling mechanism (3) is located above the melt (8) and includes a servo motor for pulling the crystal (6). An infrared thermal imager (4) is set in the observation window above the side of the melt (8), with the lens aimed at the solid-liquid interface area, for real-time acquisition of thermal field images of the growth interface (7); The controller (5) is electrically connected to the infrared thermal imager (4), the crystal-driving mechanism (3), and the heater (2), respectively; the controller (5) includes: an image processing module, used to receive thermal field images, identify solid-liquid interface isotherms, and calculate the real-time radius of curvature R. real The radius of curvature of the concave melt is defined as negative. The comparison module is used to compare the real-time radius of curvature R. real With respect to the preset target radius of curvature [R] min ,R max ] for comparison, where R min =-3D, R max =-1.5D, where D is the crystal diameter; The control signal generation module is used to generate control commands based on the result of the comparison module. When R real When the pull speed is greater than -1.5D, instructions to increase the pulling speed and / or increase the heater power are generated and sent to the crystal pulling mechanism and / or the heater; When R real When the temperature is below 3D, instructions to reduce the pulling speed and / or reduce the heater power are generated and sent to the crystal pulling mechanism and / or the heater; When R real When within [-3D, -1.5D], generate instructions that maintain the current parameters.

7. The heavily antimony-doped single-crystal silicon growth system based on real-time interface morphology control according to claim 6, characterized in that: The controller (5) is a combination architecture of PLC and industrial computer; the acquisition frequency of the infrared thermal imager is not less than 1 Hz.

8. The heavily antimony-doped single-crystal silicon growth system based on real-time interface morphology control according to claim 6, characterized in that: The heater (2) includes a main heater and an optional auxiliary heater. The control signal generation module can independently or collaboratively control the power output of the main heater and the auxiliary heater.

9. The heavily antimony-doped single-crystal silicon growth system based on real-time interface morphology control according to claim 6, characterized in that: The image processing module uses edge detection combined with a least-squares fitting algorithm to calculate the real-time radius of curvature R. real .

10. The heavily antimony-doped single-crystal silicon growth system based on real-time interface morphology control according to claim 6, characterized in that: The system is used to perform the method of growing heavily antimony-doped single crystal silicon based on real-time control of interface morphology as described in any one of claims 1 to 5. During the crystal pulling process that lasts for tens of hours, it overcomes thermal field drift and keeps the growth interface (7) in a micro-concave morphology so as to completely eliminate the defects of the heavily antimony-doped impurity channel and make the radial resistivity uniformity less than 5%.

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