A gas inlet system for a large size multi-wafer vertical epitaxial apparatus

Abstract

The present application relates to the technical fields of semiconductor epitaxial equipment, and discloses a gas inlet system of large-size multi-piece vertical epitaxial equipment, which comprises a gas inlet cavity having a gas inlet end and a gas outlet end, a diffusion gas distribution mechanism arranged in the gas inlet cavity and communicating with the gas inlet end for uniformly diffusing and distributing the incoming gas in the circumferential direction, and a gas uniform flow mechanism arranged downstream of the diffusion gas distribution mechanism for rectifying the diffused gas and making it flow into the reaction cavity with a uniform flow rate distribution, wherein the diffusion gas distribution mechanism comprises a plurality of gas distribution assemblies distributed in the circumferential direction of the gas inlet cavity. By arranging a plurality of independent gas distribution assemblies connected with different gas inlet interfaces, the process gas can be divided into a plurality of independently controllable gas supply channels according to regions, and the flow rate and component ratio of the main road gas and the doping gas can be independently adjusted in different regions according to the process requirements, so that the inherent gas distribution uneven problem of the large-size cavity can be effectively compensated.

Description

Technical Field

[0001] This invention relates to the field of semiconductor epitaxial equipment technology, and more specifically, to an air intake system for large-size multi-wafer vertical silicon carbide epitaxial equipment, particularly suitable for the uniformity control of the gas flow field when multiple wafers are processed simultaneously. Background Technology

[0002] Silicon carbide epitaxy is a core component in the manufacturing of semiconductor power devices, and the performance of the equipment directly determines the quality of epitaxial wafers and the efficiency of industrialization. With the continued growth in market demand for power devices, industrial production urgently needs to increase output per unit time by expanding the size of epitaxial equipment and enabling simultaneous processing of multiple wafers. Large-size, multi-wafer vertical epitaxial equipment, capable of accommodating more substrates for simultaneous epitaxial growth, has become the mainstream direction for industry development.

[0003] However, with the increase in equipment cavity size, traditional air intake systems face insurmountable technical bottlenecks. Epitaxial processes require extremely high uniformity of the gas flow field. Process gases (such as silicon source gas, carbon source gas, doping gas, and carrier gas) need to form a stable and uniform flow atmosphere on the surfaces of multiple substrates to ensure the consistency of key indicators such as thickness, doping concentration, and resistivity of each epitaxial layer. Traditional air intake systems often use a single air inlet or a simple distributed air intake design, which easily leads to the following problems after gas enters a large-size cavity: 1. Uneven flow rate: Excessive substrate gas supply near the center of the air inlet and insufficient substrate gas supply far from the air inlet result in significant differences in process parameters between multiple epitaxial wafers and within a single wafer, leading to a sharp decline in product yield. 2. Local eddies and gas deviation: Simple air intake structures are difficult to form a uniform flow field in large-sized cavities, which easily generate eddies and gas deviation phenomena, thus disrupting laminar flow stability; 3. Local accumulation of reaction products: Uneven flow field can also cause reaction products to accumulate locally inside the cavity, affecting equipment stability and process repeatability; 4. Limited control methods: Traditional air intake systems lack the ability to independently control gas in multiple regions and cannot dynamically adjust the gas flow and composition in different regions according to process requirements.

[0004] Although the industry has attempted to optimize the flow field by increasing the number of air inlets and adjusting the air inlet angle, none of these methods have fundamentally solved the problems of inconsistent gas diffusion paths and difficulty in flow velocity control in large-size cavities. Therefore, there is an urgent need to design a new type of air inlet system that can adapt to the needs of large-size multi-wafer vertical epitaxial devices and achieve precise control and uniform distribution of the gas flow field. Summary of the Invention

[0005] The purpose of this invention is to overcome the shortcomings of uneven gas distribution and insufficient control capability in the gas intake system of large-size epitaxial devices in the prior art, and to provide a gas intake system for large-size multi-plate vertical epitaxial devices that can achieve independent control of gas zones, multi-stage diffusion uniform flow, and precise flow field control.

[0006] The present invention proposes an air intake system for a large-size multi-wafer vertical epitaxial device, comprising an air intake cavity having an air intake end and an air outlet end, and further comprising: A gas diffusion distribution mechanism is disposed in the air inlet cavity and connected to the air inlet end, and is used to evenly diffuse and distribute the incoming gas in the circumferential direction. A gas equalization mechanism is located downstream of the diffusion gas distribution mechanism to rectify the diffused gas and make its flow velocity distribution uniform before it enters the reaction chamber. The diffusion gas distribution mechanism includes multiple gas distribution components distributed circumferentially along the air intake cavity. Each gas distribution component is connected to a different air intake interface to achieve independent control of gas zones.

[0007] As a further optimization of the present invention, each gas distribution component of the diffusion gas distribution mechanism includes: The air intake slot is connected to the corresponding air intake interface; At least one air distribution groove is connected to the air inlet groove; Multiple air distribution pipes are connected to the air distribution groove, and multiple air holes are provided on the air distribution pipes.

[0008] As a further optimization of the present invention, the air inlet groove and the air distribution groove are arc-shaped grooves, which are concentrically arranged with the air inlet cavity; the air distribution pipe is an arc-shaped pipe, which is distributed at intervals along the circumference.

[0009] As a further optimization of the present invention, the gas flow equalization mechanism includes multiple gas guide tubes, the inner hole of which is a polygonal honeycomb structure, used to divide the vortex and eliminate radial velocity fluctuations.

[0010] As a further optimization of the present invention, the inner hole of the air guide tube is a regular hexagon, and multiple regular hexagonal holes form a honeycomb rectifier.

[0011] As a further optimization of the present invention, it also includes a partition ring disposed in the air intake cavity, which divides the air intake cavity into an outer air intake zone and an inner air intake zone.

[0012] As a further optimization of the present invention, a water cooling system is also included, which includes a water cooling channel disposed in the air intake cavity and a water cooling connector connected to an external coolant circulation device.

[0013] As a further optimization of the present invention, the water cooling system is a zoned water cooling system, which includes multiple independent cooling zones, each of which has an independent water inlet and water outlet.

[0014] As a further optimization of the present invention, a detection component is also included, which includes an online thickness detection unit and / or a temperature detection unit for real-time monitoring of process parameters and feedback to the control system.

[0015] As a further optimization of the present invention, the air intake end has multiple air intake ports, and each air intake port branch is equipped with a mass flow meter and a solenoid valve for independently controlling the gas flow of each branch.

[0016] The air intake system for the large-size multi-blade vertical epitaxial device proposed in this invention has the following beneficial effects: 1. By setting up multiple independent gas distribution components and connecting them to different gas inlet ports, the process gas can be divided into multiple independent and controllable gas supply channels according to the area. The flow rate and component ratio of the main gas and the doping gas can be independently adjusted in different areas according to the process requirements, effectively compensating for the inherent uneven gas distribution problem of large-size chambers.

[0017] 2. The diffusion gas distribution mechanism adopts a multi-stage diffusion structure of "inlet groove - gas distribution groove - gas distribution pipe - gas hole". The gas passes through the buffer and diffusion of each stage of the channel in sequence, and the pressure fluctuation is effectively eliminated. The gas has formed a preliminary uniform distribution before entering the flow equalization mechanism. The design of the arc groove and arc pipe makes the gas diffuse evenly in the circumferential direction, avoiding local concentration.

[0018] 3. The gas flow equalization mechanism adopts a porous honeycomb structure for the air guide tube, which can divide large-scale vortices into small-scale vortices, eliminate radial velocity fluctuations and vortex flow of the airflow, and make the flow velocity distribution more uniform. The design of increasing pore density along the airflow direction further ensures laminar flow stability.

[0019] 4. Multiple sets of water-cooling connectors are set on the outer periphery of the fixed ring, which, together with the internal meandering flow channel, form a zoned water-cooling system. This can effectively prevent the heat radiation from the lower heating zone from being conducted to the top, avoid the gas from reacting prematurely in the gas inlet system, and ensure that the process gas enters the reaction chamber fresh.

[0020] 5. It integrates online thickness detection unit and temperature detection unit to monitor wafer film thickness and thermal field temperature in real time. The data is fed back to the controller to dynamically adjust the flow of each branch, realizing closed-loop optimization control of the flow field. Moreover, each gas distribution component, gas guide pipe and cooling zone adopts modular design, which facilitates local replacement and maintenance, reduces downtime and improves equipment utilization.

[0021] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the overall three-dimensional structure of the present invention; Figure 2 This is a frontal cross-sectional view of the present invention. Figure 3 This is a top view of the internal structure of the fixing ring of the present invention; Figure 4 This is a schematic diagram of the internal three-dimensional structure of the fixing ring of the present invention; Figure 5 This is a three-dimensional structural schematic diagram of the diffusion gas distribution mechanism of the present invention; Figure 6 This is a bottom view of the top cover and the diffusion and air distribution mechanism of the present invention. Figure 7 This is a schematic diagram showing the distribution structure of the multiple air intake interfaces of the present invention; Figure 8 This is a schematic diagram of the longitudinal cross-sectional structure of the present invention; Figure 9 This is a schematic diagram of the transverse cross-sectional structure of the fixing ring of the present invention; Figure 10 This is a schematic diagram of the distribution structure of the fixing ring and the partition ring of the present invention; Figure 11 This is a bottom view of the partition plate and guide plate of the present invention; Figure 12 This is a schematic diagram of the structure of the lower cover plate of the present invention; Figure 13 This is a schematic diagram of the spatial distribution of the gas diffusion and gas equalization mechanisms of the present invention; Figure 14 This is a schematic diagram of the gas guide tube structure of the gas flow equalization mechanism of the present invention; Figure 15 For the present invention Figure 6 A magnified schematic diagram of the cone-shaped protrusion at point A; Figure 16 This is a schematic diagram of the flow monitoring unit of the present invention.

[0023] Figure Descriptions: 1. Intake top plate; 2. Fixing ring; 3. Top cover; 4. Intake end; 41. First intake port; 42. Second intake port; 43. Third intake port; 44. Fourth intake port; 45. Fifth intake port; 5. Diffusion and air distribution mechanism; 51. First air distribution assembly; 511. First intake slot; 512. First air distribution slot; 513. First air distribution pipe; 52. Second air distribution assembly; 521. Second intake slot; 522. Second air distribution slot; 523. Second air distribution pipe; 53. Third air distribution assembly; 531. Third intake slot; 5 32. Third air distribution slot; 533. Third air distribution pipe; 54. Fourth air distribution assembly; 541. Fourth air inlet slot; 542. Fourth air distribution slot; 543. Fourth air distribution pipe; 55. Fifth air distribution assembly; 551. Fifth air inlet slot; 552. Fifth air distribution slot; 553. Fifth air distribution pipe; 6. Gas flow equalization mechanism; 61. Upper cover plate; 62. Lower cover plate; 63. Air guide pipe; 64. Separator frame; 65. Flow guide plate; 7. Isolation ring; 8. Detection assembly; 9. First water-cooled connector; 10. Water-cooled slot; 11. Second water-cooled connector; 12. Conical protrusion. Detailed Implementation

[0024] Embodiments of the present invention are described in detail below. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar symbols denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0025] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0026] Please see Figures 1 to 16 The air intake system of the large-size multi-plate vertical epitaxial device proposed in this invention mainly includes an air intake cavity, a fixing ring 2, a top cover 3, a diffusion and distribution mechanism 5, and a gas flow equalization mechanism 6.

[0027] like Figure 1 and Figure 2As shown, in this embodiment, the air intake cavity adopts an air intake top plate 1, which is a ring-shaped structure. A fixed ring 2 with the same inner diameter and centered is installed on the upper end surface of the air intake top plate 1. A top cover 3 covering its opening is installed on the fixed ring 2. The top cover 3 has an air intake end 4 that communicates with the fixed ring 2.

[0028] The upper end of the inner cavity of the fixed ring 2 is equipped with a diffusion gas distribution mechanism 5 connected to the air inlet end 4, and the lower end of the inner cavity of the fixed ring 2 is equipped with a gas equalization mechanism 6 that extends into the interior of the air inlet top plate 1 and is flush with the lower end surface of the air inlet top plate 1, thereby forming a buffer pressure equalization cavity and a gas equalization cavity distributed vertically.

[0029] The intake top plate 1 serves as the base of the intake system, and its interior is equipped with a water-cooling system, such as... Figure 7 and Figure 8 As shown, the upper end of the intake top plate 1 has a water-cooling tank 10. The upper opening of the water-cooling tank 10 is sealed by an annular plate. The interior of the water-cooling tank 10 has a meandering flow channel. A second water-cooling connector 11 is installed at both the inlet and outlet of the meandering flow channel. Through an external coolant circulation device, the intake top plate 1 is water-cooled to prevent the heat radiation of the lower heating zone from being conducted to the top and to avoid the gas from reacting prematurely in the intake system.

[0030] The fixed ring 2 is installed on the upper end face of the air intake top plate 1, serving as the mounting carrier for the diffusion distribution mechanism 5 and the gas equalization mechanism 6. The inner cavity of the fixed ring 2 forms a buffer equalization chamber. Due to the large air intake area of ​​the fixed ring 2, in order to facilitate zone control, a centered partition ring 7 is also installed inside the fixed ring 2. The lower end of the partition ring 7 is fixed to the upper end face of the gas equalization mechanism 6, and the upper end face is in close contact with the lower end face of the top cover 3, so that the upper end of the inner cavity of the fixed ring 2, i.e. the buffer equalization chamber, is divided into an outer ring air intake zone and an inner ring air intake zone, achieving more precise zone adjustment.

[0031] like Figure 7 As shown, the air intake end 4 has five air intake ports installed on the upper surface of the top cover 3, namely the first air intake port 41, the second air intake port 42, the third air intake port 43, the fourth air intake port 44 and the fifth air intake port 45.

[0032] In this embodiment, the main gas (silicon source, carbon source, etc.) branches into three branches after passing through the main valve, which are respectively connected to the first air inlet 41, the third air inlet 43 and the fifth air inlet 45. The doped gas branches into two branches after passing through the main valve, which are respectively connected to the second air inlet 42 and the fourth air inlet 44. The first air inlet 41, the second air inlet 42 and the third air inlet 43 are connected to the outer ring of the buffer pressure equalization chamber, and the fourth air inlet 44 and the fifth air inlet 45 are connected to the inner ring air inlet partition. This partition design allows the gas flow and composition of the outer ring and the inner ring to be independently controlled, effectively compensating for the inherent uneven gas distribution problem of large-size chambers.

[0033] like Figure 16 As shown, each of the five branches is equipped with a mass flow meter (accuracy ±0.5%) and a normally closed electromagnetic valve. The flow rate ratio is controlled by a PLC. A mixing chamber for a doped gas source is set at the front of the air inlet. The doped gas ratio is precisely controlled by a needle valve. Then, the gas is injected into the second air inlet port 42 and the fourth air inlet port 44 through the main valve.

[0034] like Figures 3 to 6 As shown, the diffusion air distribution mechanism 5 includes five air distribution components, which are respectively connected to five air inlet ports.

[0035] The first air distribution assembly 51 is located on the outer ring of the buffer pressure equalization chamber and is connected to the first air inlet 41. Its structure includes: First air intake groove 511: Located on the lower end face of top cover 3, it is an arc-shaped groove with an arc center angle of 180 degrees, and is concentric with fixing ring 2; First air distribution groove 512: Located at both ends of the first air inlet groove 511, it is an arc-shaped groove with an arc center angle of 90 degrees, concentric with the fixing ring 2, and the two ends of the first air inlet groove 511 are respectively fixedly connected to the middle of the adjacent first air distribution groove 512. The first air distribution pipe 513 consists of four arc-shaped pipes, which are closed at both ends and connected to the end of the first air distribution groove 512 through a vertical pipe in the middle. The upper end face has air holes evenly distributed along the length direction, with an arc center angle of 80-90 degrees (excluding 90 degrees) and distributed circumferentially.

[0036] The second gas distribution assembly 52 is located on the outer ring of the buffer pressure equalization chamber and is connected to the second gas inlet 42. It is used for the injection of doped gas, and its structure includes: The second air intake groove 521 is an arc-shaped groove with a central angle of 180 degrees, located between the first air intake groove 511 and the third air intake groove 531. The second air distribution groove 522 is an arc-shaped groove with a central angle of 90 degrees, and is connected to the end of the second air inlet groove 521. The second air distribution tube 523 consists of four tubes, which are radially distributed and extend to the outer ring of the first air distribution tube 513 and the inner ring of the third air distribution tube 533 at both ends, respectively. The upper end face has air holes evenly distributed along the length direction.

[0037] The third air distribution assembly 53 is located on the outer ring of the buffer pressure equalization chamber and is connected to the third air inlet 43. Its structure is similar to that of the first air distribution assembly 51. It is located on the inner ring of the first air distribution assembly 51 and the openings are opposite to each other. It includes the third air inlet groove 531, the third air distribution groove 532 and the third air distribution pipe 533.

[0038] The fourth gas distribution assembly 54 is located in the inner ring air intake section and is connected to the fourth air intake interface 44. It is used for the injection of doped gas, and its structure includes: The fourth air inlet slot 541 is an arc-shaped slot with a central angle of 180 degrees, located between the fifth air distribution assembly 55 and the third air distribution assembly 53. The fourth air distribution groove 542 is an arc-shaped groove with a central arc angle of 90 degrees; The fourth air distribution pipe 543 consists of four radially distributed pipes, centrally located between two adjacent fifth air distribution pipes 553, and has air holes evenly distributed along its length on its upper end face.

[0039] The fifth air distribution assembly 55 is located in the inner air intake zone and is connected to the fifth air intake interface 45. Its structure includes: Fifth air intake slot 551: located on the lower end face of top cover 3; The fifth air distribution groove 552 is located at the center of the fixed ring 2 and is H-shaped. The four ends of the H-shape are each equipped with a downward-extending fifth air distribution pipe 553. The fifth air distribution pipe 553 is a closed loop pipe with evenly distributed air holes on its upper end face. It is preferably a 90-degree fan-shaped section, and the arc segment of the fan-shaped section is concentric with the adjacent third air distribution pipe 533.

[0040] After the gas enters through the inlet, it first enters the corresponding inlet slot, then is split into the gas distribution slots at both ends, and then further split into each gas distribution pipe. Finally, it is sprayed back from the air holes on the upper end face of the gas distribution pipe to the lower end face of the top cover 3. This multi-stage splitting design effectively eliminates pressure fluctuations and makes the gas diffuse evenly in the circumferential direction. The interconnected design of the arc-shaped slot, arc-shaped pipe and buffer pressure equalization chamber further promotes the uniform distribution of gas.

[0041] As a preferred embodiment, the lower end face of the top cover 3 has uniformly distributed conical protrusions 12 to facilitate better diffusion of upward gas. The conical protrusions 12 are misaligned with the diffusion gas distribution mechanism 5, that is, there are no conical protrusions 12 at the corresponding positions of the diffusion gas distribution mechanism 5.

[0042] The gas equalization mechanism 6 is located downstream of the diffusion gas distribution mechanism 5 and is used to rectify the diffused gas so that its flow velocity distribution is uniform before it enters the reaction chamber.

[0043] like Figure 8 , Figures 10-13As shown, the gas equalization mechanism 6 includes an upper cover plate 61 and a lower cover plate 62 that are arranged in parallel. The upper cover plate 61 is fixed to the lower end of the inner wall of the fixing ring 2, and the lower cover plate 62 is fixed to the lower end of the inner wall of the air inlet top plate 1 and the lower end face is flush with it. A plurality of evenly distributed air guide pipes 63 are installed between the upper cover plate 61 and the lower cover plate 62. The upper end of the air guide pipe 63 is connected to the buffer equalization chamber, and the lower end is connected to the reaction chamber of the equipment.

[0044] like Figure 14 As shown, the inner hole of the air guide pipe 63 is a regular hexagon. Multiple sets of hexagonal air holes form a honeycomb rectifier. This structure can eliminate radial velocity fluctuations and vortex flows in the airflow, divide large-scale vortices into small-scale vortices, reduce the interference of vortices on the mainstream, increase the near-wall flow velocity, form a vertical flow, and reduce lateral flow interference.

[0045] As a preferred option, the pore density can be gradually increased along the airflow direction to further ensure laminar flow stability. The air duct 63 can be made of a high thermal conductivity material to facilitate integration with the cooling system.

[0046] To prevent heat radiation from the lower heating zone from being conducted to the top and causing premature gas reaction, this invention incorporates a zoned water cooling system, such as... Figure 8 and Figure 9 As shown, four sets of first water-cooling connectors 9, corresponding to the four cooling zones, are installed on the outer periphery of the fixing ring 2. Each set has two first water-cooling connectors 9, which correspond to the water inlet and water outlet respectively.

[0047] like Figure 11 As shown, the gas flow equalization mechanism 6 also includes a partition frame 64 installed between the upper cover plate 61 and the lower cover plate 62. The partition frame 64 includes a cylindrical support fixed at the center of the air intake top plate 1, and multiple partition plates evenly distributed around the outer wall of the cylindrical support, preferably four, to provide cross support for the space formed by the upper cover plate 61 and the lower cover plate 62 and divide the space into four regions. Each region is equipped with a meandering guide plate 65 to form four cooling zones with meandering flow channels.

[0048] like Figure 12 As shown, there are four lower cover plates 62, which correspond one-to-one with the four cooling zones. The lower cover plates 62 are snap-fitted to the bottom of the partition frame 64 and are sealed to the partition frame 64 and the air intake top plate 1.

[0049] Each group of two first water-cooled connectors 9 corresponds to the water inlet and water outlet, respectively, and is set at the inlet and outlet of the meandering flow channel of the corresponding cooling zone. Through the external coolant circulation equipment, the zoned water cooling of multiple air guide pipes 63 is realized.

[0050] To improve process stability and repeatability, this invention also integrates online monitoring and closed-loop control functions, such as... Figure 1 and Figure 2As shown, a detection component 8 is installed on the upper surface of the top cover 3, including at least one online thickness detection unit and at least one temperature detection unit.

[0051] Online thickness detection unit: preferably a laser thickness gauge, used to monitor the wafer film thickness in real time, and the data is fed back to the controller to adjust the air intake flow; Temperature detection unit: preferably a dual-wavelength temperature measurement module, used to monitor the temperature of the thermal field and optimize the coupling between airflow and thermal field; By integrating online laser film thickness monitoring and dual-wavelength temperature measurement modules, data is fed back to the controller in real time, and the flow rate of each branch and the position of the baffle are dynamically adjusted to achieve closed-loop control.

[0052] The working process of this invention is as follows: Gas supply: The main gas and the mixed gas are controlled by mass flow meters and solenoid valves respectively, and enter the five gas inlet ports according to preset ratios; Zoned air intake: Gas from the first, second, and third air intake ports enters the outer ring air intake zone, while gas from the fourth and fifth air intake ports enters the inner ring air intake zone. The gas flow rate and composition of the inner and outer rings can be independently adjusted. Multi-stage diffusion: When gas enters the corresponding gas distribution component, it passes through a multi-stage diffusion path in sequence: gas inlet groove → gas distribution groove → gas distribution pipe → gas hole. Pressure fluctuations are eliminated and the gas is evenly distributed in the circumferential direction. Top cover reflection: Gas is injected upward from the air holes of the air distribution pipe onto the lower end face of the top cover, and after being reflected by the conical protrusion, it diffuses downward, forming a preliminary uniform airflow; Honeycomb rectification: When gas enters the gas flow equalization mechanism, the hexagonal honeycomb structure divides the large-scale vortex into small-scale vortexes, eliminates radial velocity fluctuations, and makes the flow velocity distribution uniform, forming a stable vertical laminar flow. Entering the reaction chamber: The homogenized gas enters the reaction chamber from the lower end of the gas guide tube and participates in epitaxial growth; Online monitoring and feedback: The laser thickness gauge monitors the wafer film thickness in real time, the dual-wavelength temperature measurement module monitors the thermal field temperature, and the data is fed back to the controller. The controller dynamically adjusts the flow rate of each branch and the position of the baffle based on the feedback to optimize the flow field. Cooling protection: The water cooling system operates continuously to prevent heat radiation from causing premature gas reaction.

[0053] The scope of protection of this invention is not limited to the specific embodiments described above. Several typical variations are listed below, all of which fall within the scope of protection of this invention: Variation 1: Changes in the number of air distribution components The number of air distribution components is not limited to five; it can be set to two, three, four, or more depending on the process requirements. The zoning method of the air distribution components is not limited to two inner and outer rings; it can be set to multiple rings and multiple zones for fine zoning according to the cavity size and process requirements.

[0054] Variation 2: Changes in the shape of the air distribution tube The gas distribution pipe is not limited to an arc-shaped pipe; it can also be a straight pipe, a ring pipe, a serpentine pipe, or other shapes, as long as it can achieve uniform gas distribution along the circumference. The distribution density of the gas holes can be adjusted according to the gas flow rate and pressure requirements.

[0055] Variation 3: Changes in the shape of the air tube orifice The shape of the gas guide tube is not limited to regular hexagon; it can also be circular, square, hexagonal, octagonal, or other shapes, as long as it can form a honeycomb rectification structure. The size and density of the holes can be designed according to the gas flow rate and pressure drop requirements.

[0056] Variation 4: Replacement of the flow uniform mechanism structure Gas flow equalization mechanisms are not limited to honeycomb rectifiers; they can also be made of perforated plates, sintered plates, microporous ceramic plates, and other forms to achieve uniform gas distribution.

[0057] Variation 5: Alternative Cooling Methods Water cooling systems are not limited to meandering flow channels; they can also employ spiral flow channels, straight flow channels, microchannels, and other forms. The cooling medium is not limited to water; it can also use other cooling media such as cooling oil and fluorinated fluid.

[0058] Variation 6: Replacement of Detection Methods Online thickness measurement is not limited to laser thickness measurement; other optical measurement methods such as spectral reflectance and elliptic polarization can also be used. Temperature measurement is not limited to dual-wavelength temperature measurement; thermocouples, infrared thermal imagers, and other methods can also be used.

[0059] Variation 7: Expansion of Control Methods It can integrate artificial intelligence algorithms to establish a correlation model between process parameters and product quality through machine learning, thereby achieving intelligent flow field prediction and optimization control.

[0060] Variation 8: Expansion of Application Areas This invention is not only applicable to silicon carbide epitaxial equipment, but can also be extended to other chemical vapor deposition equipment, such as silicon epitaxy, gallium nitride epitaxy, diamond thin film deposition, and other occasions that require precise control of the gas flow field.

[0061] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. An air intake system for a large-size multi-wafer vertical epitaxial device, comprising an air intake chamber having an air intake end and an air outlet end, characterized in that, Also includes: A gas diffusion distribution mechanism is disposed in the air inlet cavity and connected to the air inlet end, and is used to evenly diffuse and distribute the incoming gas in the circumferential direction. A gas equalization mechanism is located downstream of the diffusion gas distribution mechanism to rectify the diffused gas and make its flow velocity distribution uniform before it enters the reaction chamber. The diffusion gas distribution mechanism includes multiple gas distribution components distributed circumferentially along the air intake cavity. Each gas distribution component is connected to a different air intake interface to achieve independent control of gas zones.

2. The air intake system of the large-size multi-blade vertical epitaxial device according to claim 1, characterized in that, Each gas distribution component of the diffusion gas distribution mechanism includes: The air intake slot is connected to the corresponding air intake interface; At least one air distribution groove is connected to the air inlet groove; Multiple air distribution pipes are connected to the air distribution groove, and multiple air holes are provided on the air distribution pipes.

3. The air intake system of the large-size multi-blade vertical epitaxial device according to claim 2, characterized in that, The air inlet groove and air distribution groove are arc-shaped grooves, concentrically arranged with the air inlet cavity; the air distribution pipe is an arc-shaped pipe, distributed at intervals along the circumference.

4. The air intake system of the large-size multi-blade vertical epitaxial device according to claim 1, characterized in that, The gas flow equalization mechanism includes multiple gas guide tubes, the inner holes of which are polygonal honeycomb structures used to divide vortices and eliminate radial velocity fluctuations.

5. The air intake system of the large-size multi-blade vertical epitaxial device according to claim 4, characterized in that, The inner hole of the air guide tube is a regular hexagon, and multiple regular hexagonal holes form a honeycomb rectifier.

6. The air intake system of the large-size multi-blade vertical epitaxial device according to claim 1, characterized in that, It also includes a partition ring, which is installed in the air intake chamber to divide the air intake chamber into an outer air intake zone and an inner air intake zone.

7. The air intake system of the large-size multi-blade vertical epitaxial device according to claim 1, characterized in that, It also includes a water cooling system, which includes a water cooling channel disposed in the air intake chamber and a water cooling connector connected to an external coolant circulation device.

8. The air intake system of the large-size multi-blade vertical epitaxial device according to claim 7, characterized in that, The water cooling system is a zoned water cooling system, which includes multiple independent cooling zones, each with its own inlet and outlet.

9. The air intake system of the large-size multi-blade vertical epitaxial device according to claim 1, characterized in that, It also includes a detection component, which includes an online thickness detection unit and / or a temperature detection unit, for real-time monitoring of process parameters and feedback to the control system.

10. The air intake system of the large-size multi-blade vertical epitaxial device according to claim 1, characterized in that, The air intake end has multiple air intake ports, and each air intake port branch is equipped with a mass flow meter and a solenoid valve to independently control the gas flow of each branch.

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