X-ray flaw detection equipment based on csPbBr3 memristor array and automatic film evaluation method

Abstract

The application discloses an X-ray flaw detection equipment based on a CsPbBr3 memristor array and an automatic film evaluation method, and belongs to the technical field of nondestructive testing. The equipment is sequentially provided with a radiation source, a bearing table, a sensing and storing integrated detection array, a PCB substrate, a constant current reader and an upper computer along the X-ray propagation direction; the detection array is composed of a CsPbBr3 memristor unit matrix, the unit has an Ag / perovskite / ITO vertical stacking structure, and signals are collected through a constant current voltage division circuit. The method comprises the following steps: after X-rays penetrate a weld and directly enter the perovskite layer, ionized carriers drive halogen ions to migrate to form conductive filaments, and a nonvolatile resistance state is generated; a two-dimensional voltage matrix is constructed by a reading circuit, and the upper computer reconstructs an image and identifies defects such as pores and cracks according to the two-dimensional voltage matrix. The application cancels a traditional scintillator conversion layer, reduces light scattering crosstalk, adapts to offline batch film evaluation by using the nonvolatile characteristics of the memristor, and improves the efficiency and precision of the power plant weld detection.

Description

Technical Field

[0001] This invention belongs to the field of nondestructive testing technology, specifically relating to an X-ray flaw detection device and an automatic image evaluation method based on a CsPbBr3 memristor array. Background Technology

[0002] X-ray non-destructive testing (NDT) is a core inspection technology for welding quality control during the construction of thermal power plants. It plays a crucial role in ensuring the safe and stable operation of pressure-bearing equipment and preventing unit malfunctions. A newly built single 1,000 MW unit may have 60,000-70,000 pressure-bearing welds on-site. According to DL / T869, 100% X-ray (RT) testing is required for the welds of small tubes on the boiler heating surface, with a total of 70,000-80,000 radiographs taken per unit. Currently, weld defect assessment relies entirely on manual offline evaluation, which suffers from problems such as difficulty in distinguishing minute defects, poor consistency in evaluation, low efficiency of batch testing, and susceptibility to missed or false detections.

[0003] The current mainstream intelligent X-ray detection system adopts a two-stage conversion architecture of scintillator array + photosensitive sensor. The scintillator converts X-rays into visible light, and then the photosensitive sensor collects the light signal. This scheme has the following main drawbacks:

[0004] 1. The two-layer conversion structure increases the size of the equipment, and the scattering of light emitted by the scintillator causes pixel crosstalk, resulting in a decrease in the imaging resolution of micro-cracks and point inclusion defects.

[0005] 2. It requires matching optical lenses, light collection components, and multi-stage amplification and filtering circuits, making the system hardware complex and costly;

[0006] 3. Traditional photoelectric sensors lack non-volatile signal storage capabilities and require real-time power supply to collect data, making them unsuitable for offline batch film evaluation scenarios in thermal power plants.

[0007] The automatic X-ray flaw detection and evaluation system and method based on CsPbBr3 memristor array proposed in this application mainly solves the problems of signal loss and structural redundancy caused by secondary conversion, and has multiple characteristics such as high X-ray absorption coefficient, photoelectric conversion, and ion migration resistive switching storage, which meets the needs of large-scale and high-precision defect detection in thermal power plants. Summary of the Invention

[0008] In view of the above-mentioned problems in the prior art, the purpose of this invention is to provide an X-ray flaw detection device and an automatic image evaluation method based on a CsPbBr3 memristor array.

[0009] This invention provides the following technical solution: an X-ray flaw detection device based on a CsPbBr3 memristor array: including an X-ray emission source, a workpiece support platform for the weld joint to be tested, an integrated radiation detection array, a PCB support wiring board, a multi-channel constant current signal reader, and a host computer defect identification terminal arranged sequentially along the X-ray propagation direction;

[0010] The integrated radiation detection array is a two-dimensional matrix arrangement of CsPbBr3 integrated perovskite optically controlled memristor units. Each memristor unit has a vertically stacked three-layer structure, consisting of a transparent Ag top electrode, a CsPbBr3 perovskite resistive switching absorption functional layer, and an ITO conductive bottom electrode, from top to bottom.

[0011] The CsPbBr3 integrated memristor array is fixed on a PCB carrier wiring board. The PCB carrier wiring board has a top terminal and a bottom terminal corresponding to each memristor unit. The top terminal is connected to the Ag top electrode, and the bottom terminal is connected to the ITO conductive bottom electrode.

[0012] The multi-channel constant current signal reader includes multiple independent reading circuits, each corresponding to a memristor unit. Each reading circuit consists of a DC constant current source, a voltage detection module (digital voltmeter), and a common ground terminal. The positive terminal of the DC constant current source is connected to the top terminal, and the negative terminal and the bottom terminal are connected to the common ground terminal. The voltage detection module is connected in parallel across the memristor unit.

[0013] The data output terminal of the multi-channel constant current signal reader is connected to the host computer defect identification terminal circuit.

[0014] Furthermore, the thickness of the CsPbBr3 perovskite resistive switching absorption functional layer is 450-550 nm; the thickness of the transparent Ag top electrode is 18-22 nm, and the ultrathin silver film ensures that high-energy X-rays penetrate to the perovskite layer.

[0015] Furthermore, the sides and non-photosensitive areas of the CsPbBr3 integrated perovskite optically controlled memristor unit are sealed with high-transmittance moisture-proof optical adhesive, leaving only the upper surface of the Ag top electrode as an X-ray incident window to isolate water, oxygen, and dust, thereby improving the long-term irradiation stability of the device.

[0016] Furthermore, the two-dimensional matrix-arranged CsPbBr3 integrated perovskite photoresistor units are formed by partitioning with metal cross-masks, and the units are physically isolated to eliminate photoelectric signal crosstalk between pixels.

[0017] The fabrication method of the CsPbBr3 integrated perovskite optically controlled memristor includes the following steps:

[0018] 1) Substrate pretreatment: The ITO conductive glass, which serves as the ITO conductive bottom electrode, is cleaned and surface activated, and then transferred to an inert atmosphere.

[0019] 2) Preparation of CsPbBr3 precursor solution: Mix CsBr and PbBr2 according to the preset molar ratio, dissolve them in an organic solvent to prepare a precursor solution, stir, filter and store in the dark for later use.

[0020] 3) Spin-coating of perovskite thin film: The precursor liquid is dropped onto the ITO conductive bottom electrode, and low-speed spin coating and high-speed spin coating are performed in sequence. During the high-speed spin coating process, the anti-solvent is dropped. Then, the spin-coated film is subjected to segmented annealing to obtain CsPbBr3 perovskite functional film. This film constitutes the CsPbBr3 perovskite resistive switching absorption functional layer of the device.

[0021] 4) Transparent top electrode deposition: A thin film is covered by an array of metal masks, and high-purity silver is deposited in a vacuum environment to prepare a transparent Ag top electrode. The mask is then removed to obtain a matrix memristor array.

[0022] 5) Wiring and Packaging: Fix the memristor array on the PCB carrier terminal block, and lead out the top and bottom terminals through the through terminals respectively; use optical sealant to encapsulate the sides of the device, leaving only the top photosensitive window intact;

[0023] 6) Device calibration: Apply scanning voltage to activate the ion-conducting channels inside the perovskite; calibrate the correspondence between the radiation intensity and the multi-level resistance states of the device by gradient X-ray irradiation, and eliminate failed pixel units.

[0024] X-ray flaw detection equipment based on CsPbBr3 memristor array operates on the following principle:

[0025] The method utilizes the following principles: direct ionization conversion of CsPbBr3 perovskite X-rays, non-volatile resistive switching storage of an integrated perovskite optically controlled memristor, and constant-current voltage divider circuit signal acquisition. These three principles work together to convert high-energy X-rays into weld defect images, eliminating the need for the traditional two-stage scintillator optical conversion structure. Details are as follows:

[0026] 1. Principle of direct X-ray ionization conversion of CsPbBr3 perovskite:

[0027] The CsPbBr3 crystal lattice contains high atomic number elements Pb and Br, exhibiting a strong ability to capture and absorb high-energy X-rays from thermal power plant flaw detection. When X-rays penetrate the weld joint of a pipe, the attenuation degree varies in different defect regions, forming an X-ray beam with uneven intensity distribution. This beam is perpendicularly incident on the top transparent Ag electrode of the device and reaches the perovskite functional layer. High-energy X-ray photons bombard the perovskite lattice, exciting valence band bound electrons to the conduction band, generating a large number of electron-hole pairs. The higher the X-ray irradiation intensity (defect regions such as weld cracks, pores, and slag inclusions), the higher the concentration of photogenerated carriers per unit area. In defect-free regions, X-ray attenuation is severe, resulting in fewer incident photons and extremely low carrier generation. This principle has the advantage of no intermediate loss. Compared to the two-stage conversion architecture of scintillators and photosensitive films, it eliminates the X-ray-visible light conversion step, avoiding fluorescence scattering, light energy loss, and pixel optical crosstalk problems. It can accurately capture the weak X-ray differences corresponding to tiny weld defects, significantly improving the sensitivity of low-contrast defect identification.

[0028] 2. The resistive switching and non-volatile storage principle of CsPbBr3 integrated optically controlled memristor:

[0029] CsPbBr3 monolayer films simultaneously perform X-ray absorption, photoelectric conversion, and resistive state storage. They achieve multi-level reversible resistive switching through the halogen ion migration conductive filament effect, making them crucial for offline batch film evaluation. Dark-state high resistivity (in intact weld area): In the absence of X-ray irradiation, the Br₂ inside the perovskite... - Halogen ions are uniformly dispersed, and there is no continuous conductive path inside the thin film, maintaining a stable high-resistivity state for the entire device. Under external bias, there is only a weak leakage current, corresponding to the high-voltage signal acquired by the host computer. Irradiation-induced multi-level low-resistivity state (weld defect region): X-ray ionization generates a large number of electron-hole pairs, reducing the ion migration barrier inside the thin film; driven by a small external bias applied to the PCB substrate, Br... - Halogen ions migrate and aggregate in a directional manner, forming multiple continuous conductive filaments inside the perovskite film. The greater the X-ray irradiation intensity, the higher the carrier concentration, the deeper the ion migration, the better the connectivity of the conductive filaments, and the continuously decreasing device resistance, forming a multi-level tunable low-resistance state and establishing a linear mapping relationship between X-ray intensity and device resistance.

[0030] Non-volatile memory property: After the removal of X-ray irradiation, the Br inside the perovskite... - The conductive filament structure formed by ions will not spontaneously dissipate, and the device resistance state can be stably preserved for a long time without the need for continuous power supply to maintain the signal. After the detection is completed, all array resistance state data can be read offline in batches, which is perfectly adapted to the engineering scenario of offline centralized evaluation of tens of thousands of RT films from millions of units.

[0031] 3. Constant current voltage divider circuit acquisition principle:

[0032] Based on a back-end multi-channel parallel readout circuit structure, it requires no modification to the existing hardware structure. Through a constant current voltage divider mechanism, it converts the multi-stage resistance signals of the memristor into a quantizable voltage matrix, thus completing the digital output of the electrical signal. Details are as follows:

[0033] The acquisition process follows a unified constant current power supply rule: each CsPbBr3 memristor unit in the array is matched with an independent reading branch, and all branches share a constant current source of the same specification DC to ensure that each branch is supplied with a constant current I of exactly the same magnitude, thus eliminating acquisition errors caused by power supply differences.

[0034] In this power supply mode, the voltage signal is mapped to the weld condition:

[0035] The weld defect area is strongly irradiated by X-rays. The internal conductive filaments of the memristor are intact and the resistance R is small, resulting in a lower corresponding acquisition voltage U.

[0036] In areas with intact welds, X-ray irradiation is weak, causing the device to maintain a high-resistivity state with a large resistance R, resulting in a higher acquisition voltage U.

[0037] Multi-channel digital voltmeters synchronously collect the voltage across all memristor units and integrate them to generate a two-dimensional voltage distribution matrix. The host computer maps the voltage values ​​into grayscale images and automatically distinguishes four typical welding defects—porosity, cracks, slag inclusions, and incomplete penetration—through threshold segmentation and contour recognition algorithms. The computer outputs detection results that include the location, size, and type of the defects.

[0038] The entire acquisition circuit does not depend on the front-end conversion medium and can be directly adapted to the CsPbBr3 integrated memristor array of this invention. There is no need to replace the amplification, filtering, and analog-to-digital conversion hardware, which reduces the cost of equipment modification and implementation.

[0039] The above acquisition and signal processing procedures are as follows:

[0040] High-energy X-rays, emitted from the flaw detection source, penetrate the pipe weld. Due to the material density difference between the defective and intact areas of the weld, spatial selective attenuation occurs, resulting in a gradient X-ray intensity distribution. The attenuated X-rays directly incident on the CsPbBr3 perovskite layer, where high-energy photons excite the lattice to generate electron-hole pairs, creating a carrier concentration difference. Photogenerated carriers lower the halide ion migration barrier, inducing Br⁻ ions to migrate directionally under the drive of a bias electric field and forming multi-level conductive filaments. This causes the device to exhibit a stable non-volatile resistance state corresponding to the irradiation intensity. A constant-current voltage divider acquisition circuit linearly converts the resistance state changes of each unit into voltage signals, integrating them to construct a two-dimensional voltage matrix characterizing the weld transmittance. The host computer analyzes and maps the matrix data, reconstructing it into a grayscale image of the weld and generating a detection report containing the defect location, size, and type.

[0041] By employing the above-described technology, the beneficial effects of the present invention compared to the prior art are as follows:

[0042] 1) This invention is based on a CsPbBr3 perovskite memristor array. It utilizes the strong absorption and direct ionization characteristics of X-rays by the high atomic number element to achieve X-ray absorption, photoelectric conversion and resistive switching storage in a single thin film. This eliminates the need for traditional scintillator arrays and carrier plates, reduces light scattering crosstalk, and improves the identification accuracy of low-contrast defects such as microcracks and point inclusions. It is suitable for the large-scale testing needs of thermal power plants.

[0043] 2) This invention uses a CsPbBr3 monolayer thin film as the functional layer. It utilizes charge carriers generated by X-ray ionization to drive halide ion migration, forming stable conductive filaments. This allows the memristor unit to maintain its predetermined resistance state after irradiation is removed. Based on this non-volatile storage characteristic, the device does not require real-time power supply to preserve defect features, making it suitable for offline, high-volume RT film inspection in thermal power plants.

[0044] 3) This invention eliminates the need for traditional scintillators and supporting optical components. It constructs a planar detection structure by directly leading electrodes from a PCB-based mounting substrate, simplifying the system's optical path and hardware circuitry. Furthermore, the CsPbBr3 thin film can be used to fabricate a matrix array over a large area using spin coating and mask evaporation processes, simplifying the fabrication process. This invention meets the batch testing requirements of tens of thousands of images from millions of radiometers, avoiding the problems of missed detections, false detections, and low efficiency associated with manual image evaluation from a hardware perspective. Attached Figure Description

[0045] Figure 1 This is a schematic diagram of the overall system isometric layout of the present invention, including: 1-X-X-ray emission source, 2-workpiece support platform for weld joint to be tested, 3-integrated radiation detection array, 4-PCB support wiring board, 5-multi-channel constant current signal reader and 6-host computer defect identification terminal;

[0046] Figure 2 This is a cross-sectional structural diagram of the CsPbBr3 integrated memristor unit of the present invention, showing 31-transparent Ag top electrode, 32-CsPbBr3 perovskite resistive switching absorption functional layer, and 33-ITO conductive bottom electrode.

[0047] Figure 3 This is the topology diagram of the single-channel memristor constant current reading circuit of the present invention, where 51-constant current source, 52-voltage detection module, and 53-common ground terminal;

[0048] Figure 4 This is a schematic diagram of the parallel acquisition circuit of the multi-channel memristor array of the present invention;

[0049] Figure 5 This is a schematic diagram of a two-dimensional voltage matrix imaging corresponding to weld defects in this invention. Detailed Implementation

[0050] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0051] Conversely, this invention encompasses any substitutions, modifications, equivalent methods, and solutions made within the spirit and scope of the invention as defined in the claims. Furthermore, to provide a better understanding of the invention, certain specific details are described in detail below. However, those skilled in the art will fully understand the invention even without these detailed descriptions.

[0052] Please see Figure 1-5 This invention discloses an X-ray flaw detection device based on a CsPbBr3 memristor array, including an X-ray emission source 1, a workpiece support platform 2 for the weld joint to be tested 2, an integrated induction and storage radiation detection array 3, a PCB support wiring board 4, a multi-channel constant current signal reader 5, and a host computer defect identification terminal 6 arranged sequentially along the X-ray propagation direction.

[0053] The integrated sensing and storage radiation detector array 3 consists of a transparent Ag top electrode 31, a CsPbBr3 perovskite resistive switching absorption functional layer 32, and an ITO conductive bottom electrode 33; its specific fabrication process is as follows:

[0054] S1. Cutting and multi-step cleaning and activation of the ITO conductive substrate, which serves as the ITO conductive bottom electrode 33:

[0055] Standard ITO conductive glass was selected and cut to size according to the PCB array substrate. It was then placed in an ultrasonic cleaning tank containing acetone, anhydrous ethanol, and deionized water, and ultrasonically cleaned for 15 minutes with each solvent to thoroughly remove oil, dust, and metallic impurities from the substrate surface. After cleaning, it was removed and placed in a 60°C constant temperature oven for 10 minutes to completely remove surface moisture. Subsequently, it was irradiated with ultraviolet ozone for 20 minutes to oxidize and remove organic residues on the surface and improve the adhesion of the perovskite film interface. After treatment, it was immediately transferred to an argon glove box for sealed storage to prevent air and moisture from contaminating the substrate.

[0056] Preparation and filtration of S2, CsPbBr3 perovskite precursor solution; standing

[0057] Weigh cesium bromide (CsBr) and lead bromide (PbBr2) solid powders in a glove box at a 1:1 molar ratio, mix them, and pour the mixture into a 7:3 volume ratio of DMF and DMSO to prepare a 1.0 mol / L CsPbBr3 precursor solution. Place the mixed solution on a 60°C constant temperature magnetic stirrer and stir continuously for 2 hours until the solid powder is completely dissolved to obtain a golden yellow transparent precursor solution. Use a 0.22 μm PTFE organic filter membrane to filter the solution under negative pressure to remove trace amounts of undissolved crystals and impurity particles. After filtration, let it stand in the dark for 30 minutes for later use.

[0058] S3, spin coating of perovskite thin films, antisolvent-induced film formation and segmented annealing

[0059] The pretreated ITO conductive glass was vacuum-adsorbed and fixed on the spin coater worktable inside the glove box. 60 μL of the prepared CsPbBr3 precursor solution was taken using a pipette and evenly dripped onto the surface of the ITO conductive glass, which serves as the ITO conductive bottom electrode 33. A two-stage spin coating program was initiated: low speed (500 r / min) for 10 seconds to evenly spread the precursor solution across the ITO conductive glass; then high speed (3000 r / min) for 30 seconds to remove excess solvent from the ITO conductive glass surface; at the 15th second of the high-speed spin coating, a uniform dripping process was initiated. 100 μL of anhydrous diethyl ether was used as an antisolvent to rapidly induce uniform nucleation of perovskite and eliminate pinholes and pores in the film. After spin coating, the ITO conductive glass was smoothly transferred to the hot plate in the glove box and pre-annealed at 80°C for 10 min to fully evaporate the residual organic solvent inside the film. Then, the temperature was raised to 220°C for high-temperature annealing for 15 min to control the perovskite grain size and improve the crystallinity and X-ray ionization response of the film. After annealing, the film was naturally cooled to room temperature to obtain a dense and flat CsPbBr3 photosensitive switching film with a thickness of about 500 nm.

[0060] S4. Vacuum thermal evaporation of transparent Ag top electrode to form a two-dimensional memristor matrix array.

[0061] After cooling, the perovskite thin film sample was removed from the glove box, covered with a cross-array metal mask, and precisely divided into independent pixel units. The sample was then placed into a vacuum evaporation chamber, and after the chamber was closed, a vacuum was evacuated until the vacuum level inside the chamber reached 5 × 10⁻⁶. -5 Using 99.99% high-purity silver as the evaporation source and controlling the evaporation rate at 0.1 nm / s, an ultrathin transparent Ag top electrode with a thickness of 20 nm was deposited on the surface of the perovskite film to ensure that high-energy X-rays can penetrate to the lower perovskite absorption layer. After the evaporation process is completed, the vacuum is released, the sample is taken out and the metal mask is removed to obtain a two-dimensional CsPbBr3 integrated memristor matrix with unit physical isolation and no photoelectric crosstalk.

[0062] The specific fabrication process of assembling the CsPbBr3 memristor matrix array with the PCB carrier substrate, electrode lead-out, and moisture-proof sealing encapsulation is as follows:

[0063] The entire memristor matrix is ​​flatly and fixed to the PCB carrier substrate. The through-type top and bottom terminals on the substrate are connected to the Ag transparent top electrode and the ITO conductive bottom electrode, respectively, to achieve pixel-level independent addressing. After assembly, high-transmittance and moisture-proof optical encapsulation adhesive is used to seal and cure the non-photosensitive areas on the sides and bottom of the device, leaving only the top Ag electrode exposed as an X-ray incident window to isolate air, moisture and dust, and prevent the perovskite film from being decomposed by moisture.

[0064] The specific processes for device electrical initialization, performance calibration, and defective pixel screening are as follows:

[0065] The packaged memristor array is connected to the semiconductor parameter testing system; continuous positive and negative cyclic scanning voltages are applied to all array units to activate the halide ion migration channels inside the perovskite thin film; a gradient-adjustable high-energy X-ray source is used to simulate the X-ray irradiation intensity corresponding to different defects in thermal power weld joints, and the correspondence between X-ray irradiation dose and multi-level resistance of the device is calibrated and stored; photoelectric response data of all pixel units are collected, and failed pixels with short circuits, performance drift and abnormal response are screened out, while the detection array with qualified response consistency is retained.

[0066] The automated image evaluation method for X-ray flaw detection equipment based on CsPbBr3 memristor array is as follows:

[0067] S1. Control the X-ray emission source 1 to output high-energy X-rays that penetrate the workpiece to be tested in the weld joint. The X-rays are spatially selectively attenuated due to the material density difference between the defective and intact areas of the weld, forming a gradient distribution of X-ray intensity. The attenuated X-rays are directly incident on the CsPbBr3 perovskite resistive switching absorption functional layer 32.

[0068] S2. High-energy photons ionize to generate electron-hole pairs. Photogenerated carriers lower the migration barrier of halide ions. Under the drive of a bias electric field, Br⁻ ions are induced to migrate in a directional manner to form multi-level conductive filaments, enabling the memristor to generate a stable non-volatile state corresponding to the radiation intensity.

[0069] S3. Control the multi-channel constant current signal reader 5 to collect the voltage divider signals of each memristor unit and construct a two-dimensional voltage matrix characterizing the weld transmittance. Each reading circuit consists of a DC constant current source 51, a voltage detection module 52 (a digital voltmeter is used in this embodiment), and a common ground terminal 53. The positive terminal of the DC constant current source is connected to the top terminal 41, and the negative terminal and the bottom terminal 42 are connected to the common ground terminal 53 to ensure that each channel is supplied with a constant current of equal magnitude, thus eliminating the acquisition error caused by power supply differences.

[0070] S4. The host computer defect identification terminal 6 receives the two-dimensional voltage matrix, maps it into a weld grayscale image, and automatically identifies four typical welding defects—cracks, porosity, incomplete penetration, and slag inclusions—through threshold segmentation and contour recognition algorithms, and outputs a detection report containing the defect location, size, and type.

[0071] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. An X-ray flaw detection device based on a CsPbBr3 memristor array, characterized in that, It includes an X-ray emission source (1), a workpiece support platform (2), an integrated radiation detection array (3), a PCB support wiring board (4), a multi-channel constant current signal reader (5), and a host computer defect identification terminal (6) arranged sequentially along the X-ray propagation direction. The integrated radiation detection array (3) is a two-dimensional matrix arrangement of CsPbBr3 integrated perovskite optically controlled memristor units. The memristor units are vertically stacked, and from top to bottom, they include a transparent Ag top electrode (31), a CsPbBr3 perovskite resistive switching absorption functional layer (32), and an ITO conductive bottom electrode (33). The PCB carrier board (4) is provided with a top terminal (41) and a bottom terminal (42) corresponding to the memristor units. The top terminal (41) is connected to the transparent Ag top electrode (31), and the bottom terminal is connected to the transparent Ag top electrode (32). The terminal (42) is connected to the ITO conductive bottom electrode (33); the multi-channel constant current signal reader (5) includes multiple independent reading circuits, each reading circuit including a constant current source (51), a voltage detection module (52) and a common ground terminal (53). The positive terminal of the constant current source (51) is connected to the top terminal (41), and the negative terminal is connected to the common ground terminal (53) together with the bottom terminal (42). The voltage detection module (52) is connected in parallel across the memristor unit; the multi-channel constant current signal reader (5) is connected to the host computer defect identification terminal (6) circuit.

2. The device according to claim 1, characterized in that, The thickness of the CsPbBr3 perovskite resistive switching absorption functional layer (32) is 450-550 nm; the thickness of the transparent Ag top electrode (31) is 18-22 nm.

3. The device according to claim 1, characterized in that, The sides and non-photosensitive areas of the CsPbBr3 integrated perovskite photoresist unit are sealed with high-transparency moisture-proof optical adhesive, and the upper surface of the transparent Ag top electrode (31) is exposed to form an X-ray incident window.

4. The device according to claim 1, characterized in that, The integrated CsPbBr3 perovskite optically controlled memristor units arranged in a two-dimensional matrix are formed by partitioning through metal cross-masks, and the units are physically isolated from each other.

5. The device according to any one of claims 1-4, characterized in that, The fabrication process of the CsPbBr3 integrated perovskite optically controlled memristor is as follows: 1) Substrate pretreatment: The ITO conductive glass, which serves as the ITO conductive bottom electrode (33), is cleaned and surface activated, and then transferred to an inert atmosphere. 2) Preparation of CsPbBr3 precursor solution: Mix CsBr and PbBr2 according to the preset molar ratio, dissolve them in an organic solvent to prepare a precursor solution, stir, filter and store in the dark for later use. 3) Spin coating of perovskite thin film: The precursor liquid is dropped onto the ITO conductive bottom electrode (33), and low-speed spin coating and high-speed spin coating are performed in sequence. During the high-speed spin coating process, the anti-solvent is added. Then the spin-coated film is subjected to segmented annealing to obtain the CsPbBr3 perovskite resistive switching absorption functional layer (32). 4) Transparent top electrode deposition: A CsPbBr3 perovskite resistive switching absorption functional layer (32) is covered with an array of metal masks, and high-purity silver is deposited in a vacuum environment to prepare a transparent Ag top electrode (31). The mask is removed to obtain a matrix memristor array. 5) Wiring and packaging: Fix the memristor array on the PCB carrier wiring board (4), and lead out the top terminal (41) and bottom terminal (42) through the through terminal; use optical sealant to package the side of the device, leaving only the top photosensitive window; 6) Device calibration: Apply scanning voltage to activate the ion-conducting channels inside the perovskite; calibrate the correspondence between the radiation intensity and the multi-level resistance states of the device by gradient X-ray irradiation, and eliminate failed pixel units.

6. An automatic image evaluation method based on the device according to any one of claims 1-4, characterized in that, Includes the following steps: S1. Control the X-ray emission source (1) output high-energy X-rays to penetrate the workpiece of the weld joint to be tested and generate differential attenuation, so that the X-rays directly enter the CsPbBr3 perovskite resistive switching absorption functional layer (32) to ionize and generate charge carriers. The charge carriers drive the migration of halide ions to form multi-level conductive filaments, so that the memristor generates a stable resistive state corresponding to the intensity of the X-rays. S2. Control the constant current reading circuit to acquire the voltage signal of each memristor unit and construct a two-dimensional voltage matrix characterizing the weld transmittance. S3. The host computer defect identification terminal (6) receives the two-dimensional voltage matrix, reconstructs the weld image, and automatically identifies defects such as porosity, cracks, slag inclusions and incomplete penetration through image processing algorithms, and outputs the detection results.

7. The automatic film evaluation method according to claim 6, characterized in that, The defects automatically identified by the host computer defect identification terminal (6) include porosity, cracks, slag inclusions and incomplete penetration.

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