Wafer level chip-based optoelectronic co-packaging system and method

Abstract

The application discloses a kind of photoelectric co-encapsulation system and method based on wafer level chip, wherein the method includes: substrate, orthogonal layered waveguide network, at least one group of lasers, multiple groups of optical fiber connectors and multiple optical modulation units, and a core particle array is arranged on the core particle bonding layer;Each core particle in the core particle array outputs first electrical signal;Each laser and each optical fiber connector is integrated on the substrate layer, located on the periphery of the core particle array, and is connected with the orthogonal layered waveguide network respectively;Laser is used to generate the first optical signal corresponding to each core particle;Optical modulation unit is used to receive the first optical signal and the first electrical signal, and modulates the first optical signal based on the first electrical signal, generates the second optical signal after modulation;Second optical signal is transmitted to optical fiber connector by orthogonal layered waveguide network.The application can solve the technical problems that large-scale core particle array optical signals are difficult to be efficiently converged and uniformly output in the existing wafer-level optical interconnection architecture.

Description

Technical Field

[0001] This invention relates to the field of optical communication technology, and in particular to a wafer-level chip-based optoelectronic co-packaging system and method. Background Technology

[0002] As the integration scale of single chips continues to increase, chip-based heterogeneous integration technology, constrained by the physical limits of advanced process technologies and manufacturing costs, is gradually becoming an important development direction for high-performance chip systems. By integrating different functional chips such as computing chips, storage chips, and input / output interface chips into the same substrate in a high-density array, it is possible to effectively improve the integration level of chip systems, expand the computing scale, and take into account manufacturing costs.

[0003] However, with the continuous growth in the number of chips and the scale of computing, the demand for data interaction between chips is increasing exponentially, and large-scale two-dimensional chip arrays face severe inter-chip interconnect bottlenecks. In existing technologies, inter-chip communication mainly relies on metal electrical interconnects. Due to the increase in interconnect distance and the expansion of interconnect scale, the parasitic resistance, parasitic capacitance, and electromagnetic crosstalk effects in the electrical interconnect links are significantly enhanced, which can easily lead to problems such as increased transmission delay, decreased signal integrity, increased chip system power consumption, and limited interconnect bandwidth. Therefore, traditional electrical interconnect architectures can hardly meet the requirements of large-scale chip systems for TB-level or even higher bandwidth, low latency, and high energy efficiency data transmission.

[0004] To address the aforementioned issues, co-packaged optoelectronics (CPO) technology has gradually gained widespread attention. Existing technologies typically achieve coordinated operation of optical signal transmission and electrical signal processing by co-packaging the optical engine and computing chip, thereby reducing interconnect power consumption and increasing transmission bandwidth. Meanwhile, some research is also attempting to integrate optical devices such as optical waveguides and modulators within the substrate to construct optical interconnect networks for inter-chip communication, and to utilize wavelength division multiplexing (WDM) technology to improve the transmission efficiency of optical links.

[0005] However, most existing technologies employ chip-level integration, making it difficult to achieve substrate-level integrated optoelectronic integration for large-scale chip arrays. Furthermore, existing optical interconnect architectures primarily focus on point-to-point communication between chips, lacking a global signal aggregation and unified external transmission structure for large-scale chip arrays. Data aggregation typically still relies on complex on-chip networks and I / O architectures. In addition, existing WDM interconnect solutions are prone to wavelength conflicts, low wavelength resource utilization, and wide-ranging impacts from localized faults.

[0006] This section is intended to provide background or context for the embodiments of the invention set forth in the claims. The description herein is not an admission that it is prior art simply because it is included in this section. Summary of the Invention

[0007] This invention provides a wafer-level chip-based optoelectronic co-packaging system to solve the technical problems in existing wafer-level optical interconnect architectures, such as the difficulty in efficiently converging and uniformly outputting large-scale chip array optical signals, wavelength resource allocation conflicts, insufficient optical interconnect expansion capabilities, and low wavelength reuse efficiency. It achieves low-loss parallel transmission and unified output of all chip optical signals, improving wavelength resource utilization, system bandwidth density, and the scalability of large-scale chip arrays.

[0008] The wafer-level chip-based optoelectronic co-packaging system includes: a substrate, an orthogonal layered waveguide network, at least one set of lasers, multiple sets of fiber optic connectors, and multiple optical modulation units. The substrate includes a substrate layer and a core bonding layer. A core array is disposed at a preset position in the core bonding layer; each core in the core array is used to perform data operations and output a first electrical signal. Each laser and each fiber optic connector passes through the core bonding layer and is integrated on the substrate layer; each laser and each fiber optic connector are located on the periphery of the core array and are respectively connected to the orthogonal layered waveguide network; the laser is used to generate a first optical signal corresponding to the target wavelength of each core. The optical modulation unit corresponds one-to-one with the core chip. The optical modulation unit is used to receive the first optical signal corresponding to the orthogonal layered waveguide network and the first electrical signal output by the corresponding core chip, and modulate the first optical signal based on the first electrical signal to generate a modulated second optical signal; and transmit the second optical signal to the optical fiber connector through the orthogonal layered waveguide network.

[0009] In some embodiments, the core bonding layer includes a passive conductive layer and an active optical waveguide layer, wherein the active optical waveguide layer is located between the passive conductive layer and the substrate layer; and the orthogonal layered waveguide network is disposed in the active optical waveguide layer.

[0010] In some embodiments, the orthogonal layered waveguide network includes: a carrier waveguide layer and a signal waveguide layer; the carrier waveguide layer and the signal waveguide layer are spaced apart in the thickness direction of the substrate; The carrier waveguide layer includes multiple carrier waveguides, each of which extends along a first direction; each carrier waveguide corresponds to a column of cores in the core array. The signal waveguide layer includes multiple signal waveguides, each extending along a second direction orthogonal to the first direction; each signal waveguide corresponds to a row of cores in the core array.

[0011] In some embodiments, each laser is disposed on a first side or a second side of the chip array, and the output end of each laser is coupled to one end of a corresponding carrier waveguide for injecting a set of first optical signals into the corresponding carrier waveguide; wherein, the wavelengths of each first optical signal are different.

[0012] In some embodiments, if two sets of lasers are provided, each first laser in one set of lasers is disposed on the first side of the core array, and the output end of each first laser is coupled to the first end of the corresponding carrier waveguide, for injecting a set of first optical signals generated into the corresponding carrier waveguide. Each of the second lasers in the other set of lasers is disposed on the second side of the core array, and the output end of each of the second lasers is coupled to the second end of the corresponding carrier waveguide, for injecting another set of first optical signals into the corresponding carrier waveguide; wherein, the wavelengths of each of the first optical signals are different.

[0013] In some embodiments, the fiber optic connector includes: a first fiber optic connector and a second fiber optic connector; Each of the first optical fiber connectors is disposed on the third side of the core array and is coupled to the first end of the corresponding signal waveguide; Each of the second fiber optic connectors is disposed on the fourth side of the core array and is coupled to the second end of the corresponding signal waveguide.

[0014] In some embodiments, each of the optical modulation units is disposed in the active optical waveguide layer; the optical modulation unit includes: a micro-ring resonator, an electro-optic modulator, and a vertical interconnect structure; The microring resonator is connected to the electro-optic modulator and is used to resonate and couple with the target wavelength of the corresponding core particle based on the harmonic wavelength, so as to extract the first optical signal corresponding to the target wavelength from the carrier waveguide corresponding to the core particle. The electro-optic modulator is connected to the corresponding chip via the vertical interconnect structure, and is used to receive the first electrical signal output by the chip, and modulate the first electrical signal onto the first optical signal to obtain a second optical signal carrying the first electrical signal.

[0015] In some embodiments, the optical modulation unit further includes: a wavelength thermally tuned electrode disposed on the microring resonator; the wavelength thermally tuned electrode is used to adjust the resonant wavelength of the microring resonator based on the thermo-optic effect.

[0016] In some embodiments, the active optical waveguide layer is further provided with a plurality of unidirectional coupling structures, each of which is disposed between the corresponding optical modulation unit and its corresponding signal waveguide; the electro-optic modulator injects the second optical signal into the signal waveguide through the unidirectional coupling structure, and transmits the second optical signal through the signal waveguide to the corresponding first optical fiber connector or second optical fiber connector.

[0017] In some embodiments, the active optical waveguide layer is further provided with a plurality of optical detection units; each optical detection unit corresponds one-to-one with a chip; each optical detection unit includes: the microring resonator, the photoelectric converter, and the vertical interconnect structure; The microring resonator is connected to the photoelectric converter and is used to resonate and couple with the target wavelength of the corresponding core particle based on the harmonic wavelength, so as to extract the second optical signal corresponding to the target wavelength from the signal waveguide corresponding to the core particle. The photoelectric converter is connected to the corresponding chip through the vertical interconnect structure, and is used to convert the second optical signal into a second electrical signal, and transmit the second electrical signal to the target chip through the vertical interconnect structure.

[0018] This invention provides a wafer-level chip-based optoelectronic co-packaging method to solve the technical problems in existing optical interconnect architectures, such as the difficulty in efficiently converging and uniformly outputting large-scale chip array optical signals, wavelength resource allocation conflicts, insufficient optical interconnect expansion capabilities, and low wavelength reuse efficiency. It achieves low-loss parallel transmission and unified output of all chip optical signals, improving wavelength resource utilization, system bandwidth density, and the scalability of large-scale chip arrays.

[0019] This wafer-level chip-based optoelectronic co-packaging method, applied to the aforementioned optoelectronic co-packaging system, includes: Each core in the core array is numbered according to a pre-established Latin matrix; Based on the core number corresponding to each core, a corresponding target wavelength is assigned to each core; wherein, each core number corresponds to a unique target wavelength; The control optical modulation unit extracts the corresponding first optical signal from the carrier waveguide according to the corresponding target wavelength and modulates it to obtain the modulated second optical signal.

[0020] In some embodiments, numbering each core in the core array according to a pre-established Latin matrix includes: Each chip in each row of the chip array is assigned a different chip number according to each row of the Latin matrix; wherein the target wavelengths corresponding to the chips in the same signal waveguide do not overlap. Different chip numbers are assigned to multiple chips in each column of the chip array according to each column of the Latin matrix; wherein the target wavelengths corresponding to the chips in the same carrier waveguide do not overlap.

[0021] The optoelectronic co-packaging system and method based on wafer-level chips provided in this invention achieves on-site conversion and high-speed transmission of electrical signals output from the chips to optical signals by integrating an orthogonal layered waveguide network inside the substrate and placing lasers, fiber optic connectors, and optical modulation units corresponding to each chip around the chip array. The optical modulation unit modulates the optical carrier using the first electrical signal output from the corresponding chip to generate a second optical signal, which is then transmitted and converged within the chip via the orthogonal layered waveguide network, and finally output to the outside of the substrate via the fiber optic connectors. This solution effectively shortens the traditional electrical interconnect path, reduces interconnect delay, transmission loss, and power consumption, and improves system bandwidth density and data throughput. Simultaneously, the optical waveguide network enables parallel communication and unified external connection between large-scale chip arrays, which is beneficial for improving the integration, scalability, and data exchange efficiency of the wafer-level optical interconnect system in high-performance computing scenarios. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. In the drawings: Figure 1 This is a schematic diagram of the longitudinal cross-sectional structure of the optoelectronic co-packaging system based on wafer-level chips in an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of the wafer-level chip, laser, and fiber optic connector in an embodiment of the present invention; Figure 3 This is a schematic diagram of the orthogonal waveguide network in an embodiment of the present invention; Figure 4 This is a schematic diagram of the WDM wavelength division multiplexing transmission optical path in an embodiment of the present invention; Figure 5 This is a schematic diagram illustrating the working principle of single-core resonant modulation and single-link in an embodiment of the present invention; Figure 6 This is a schematic flowchart of an optoelectronic co-packaging method based on wafer-level chips in one embodiment of the present invention; Figure 7 This is a schematic flowchart of an optoelectronic co-packaging method based on wafer-level chips in another embodiment of the present invention. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. Here, the illustrative embodiments and their descriptions are used to explain the present invention, but are not intended to limit the present invention. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be arbitrarily combined with each other. The acquisition, storage, use, and processing of data in the technical solutions of this application all comply with relevant laws and regulations. The user information in the embodiments of this application is obtained through legal and compliant means, and the acquisition, storage, use, and processing of user information have been authorized and agreed upon by the customer.

[0024] To facilitate understanding of the technical solution provided in this application, the relevant content of the technical solution in this application will be explained below.

[0025] To address the problems of existing wafer-level optical communication architectures, such as difficulty in efficiently aggregating and uniformly outputting all chip-level optical signals, lack of a unified wavelength resource allocation mechanism leading to signal transmission conflicts, low wavelength resource utilization, and insufficient scalability of large-scale chip arrays, this invention provides a wafer-level chip-based optoelectronic co-packaging system and method.

[0026] By constructing an orthogonal layered waveguide network consisting of a carrier waveguide layer and a signal waveguide layer within the substrate, and placing multiple sets of lasers and fiber optic connectors around the core array, high-speed conversion of the electrical signal output from each core to an optical signal is achieved using optical modulation units corresponding to each core. Furthermore, a mapping relationship between core number and dedicated wavelength is established based on a Latin matrix, allocating non-overlapping dedicated wavelengths to different cores, thereby achieving conflict-free multiplexing and parallel transmission of wavelength resources. The modulated optical signal is converged through the corresponding signal waveguide to a unified output via the fiber optic connector, realizing low-loss, high-bandwidth, crosstalk-free optical interconnection for large-scale core arrays. This improves wavelength resource utilization, core array scalability, and the ability for synchronous transmission and unified external communication of all core optical signals.

[0027] like Figure 1 As shown, the present invention provides an optoelectronic co-packaging system based on wafer-level chips, including: a substrate, at least one set of lasers 101, multiple sets of fiber optic connectors 102, an orthogonal layered waveguide network 103, and multiple optical modulation units 104. The substrate includes a substrate layer and a core bonding layer.

[0028] A core array is positioned at a predetermined location on the core bonding layer. Each core in the core array is used to perform data processing and output a first electrical signal.

[0029] Each laser 101 and each fiber optic connector 102 passes through the core bonding layer and is integrated on the substrate layer. Each laser 101 and each fiber optic connector 102 is located on the periphery of the core array and is connected to the orthogonal layered waveguide network 103. The laser 101 is used to generate a first optical signal corresponding to the target wavelength of each core.

[0030] The optical modulation unit 104 corresponds one-to-one with each core chip. The optical modulation unit 104 receives the corresponding first optical signal from the orthogonal layered waveguide network 103 and the first electrical signal output from the corresponding core chip, and modulates the first optical signal based on the first electrical signal to generate a modulated second optical signal. The second optical signal is then transmitted to the fiber optic connector 102 through the orthogonal layered waveguide network 103. The target wavelength is the dedicated wavelength or dedicated wavelength pair corresponding to each core chip.

[0031] According to the above embodiments, by integrating an orthogonal layered waveguide network inside the substrate and arranging lasers, fiber optic connectors, and optical modulation units corresponding to each core chip around the chip array, on-site conversion and high-speed transmission of the output electrical signal from the core chip to an optical signal are achieved. The optical modulation unit uses the first electrical signal output from the corresponding core chip to modulate the optical carrier to generate a second optical signal, and completes the on-chip optical signal transmission and aggregation through the orthogonal layered waveguide network, finally outputting it to the outside of the substrate through the fiber optic connector. The above scheme effectively shortens the traditional electrical interconnect path, reduces interconnect delay, transmission loss, and power consumption, and improves the system bandwidth density and data throughput. At the same time, the parallel communication and unified external connection between large-scale core chip arrays through the optical waveguide network is beneficial to improving the integration, scalability, and data exchange efficiency of the substrate-level optical interconnect system in high-performance computing scenarios.

[0032] In some embodiments, the substrate can be any one of a silicon substrate, a glass substrate, or an organic substrate. For ease of explanation, the following embodiments of the present invention use a silicon wafer as the substrate. However, those skilled in the art should understand that the present invention is equally applicable when using a glass substrate or an organic substrate to implement the technical solution of the present invention, and the present invention is not limited thereto.

[0033] In this embodiment of the invention, wafer-level is used to describe the integration scale of the optoelectronic co-packaging system, that is, the entire optoelectronic co-packaging system is integrated on a substrate with a size comparable to that of a semiconductor wafer, rather than limiting the substrate to a silicon wafer.

[0034] For example, when the substrate is an organic substrate, it can be an ABF (Ajinomoto Build-up Film) multilayer film substrate, a BT (Bismaleimide Triazine) resin substrate, or an FR4 glass fiber epoxy resin substrate, etc. The organic substrate includes a resin insulating layer and a copper conductive layer, and can be formed into high-density interconnect lines using a semi-additive process (SAP) to achieve electrical connections between the chip, power supply, and peripheral devices. Organic substrates have advantages such as lower manufacturing costs, mature processes, and suitability for large-scale mass production, and can be applied to optoelectronic co-packaging systems in fields such as servers, artificial intelligence accelerators, and high-performance computing.

[0035] For example, when the substrate is a silicon substrate, the silicon substrate can be fabricated using a single-crystal silicon wafer and can be combined with Through Silicon Via (TSV) technology to form a vertical interconnect structure to achieve high-speed electrical interconnection between different functional layers. The silicon substrate can serve as a high-density interconnect carrier in 2.5D packaging or wafer-level integration systems, exhibiting high wiring density, low interconnect parasitic parameters, and good dimensional stability, making it suitable for wafer-level optoelectronic co-packaging systems. The following embodiments of the present invention all use a silicon substrate (i.e., a silicon wafer) as the substrate for illustration.

[0036] For example, when the substrate is a glass substrate, the glass substrate can be made of borosilicate glass, quartz glass, or other glass materials with a low coefficient of thermal expansion, and can be combined with through-glass via (TGV) technology to form a vertical interconnect structure. Glass substrates have the characteristics of low dielectric loss, excellent high-frequency signal transmission performance, high dimensional stability, and low warpage, which can meet the needs of high-bandwidth optoelectronic interconnects and advanced packaging, and are suitable for high-density optoelectronic co-packaging systems.

[0037] The three substrates described above are merely examples. Those skilled in the art can select other substrate materials that can achieve chip support and optoelectronic device integration according to actual application requirements without affecting the realization of the technical solution of the present invention.

[0038] In embodiments of the present invention, such as Figure 1As shown, the optoelectronic co-packaging system for wafer-level chips provided by this invention adopts a wafer-level monolithic vertical integration architecture. The wafer, from bottom to top, includes: a wafer substrate layer (WSL) and a chip bonding layer (CBL). The chip bonding layer includes: a passive electrical interconnect layer (PEIL) and an active optical waveguide layer (AOWL). The active optical waveguide layer is disposed between the passive electrical interconnect layer and the wafer substrate layer.

[0039] The passive electrical interconnect layer is used to realize the vertical electrical interconnection between each chip and the active optical waveguide layer. The active optical waveguide layer is fabricated on a wafer-level platform using a silicon photonics integration process compatible with CMOS technology. The active optical waveguide layer integrates an orthogonal layered waveguide network 103, an optical modulation unit 104, and an optical detection unit 106 for realizing laser carrier distribution, optical signal transmission, and photoelectric conversion.

[0040] The wafer substrate layer uses an 8-inch or 12-inch single-crystal silicon wafer, providing mechanical support, heat dissipation channels, and a CMOS process-compatible platform for the entire optoelectronic co-packaging system. A buried oxide layer (BOX) is fabricated on the surface of the wafer substrate layer using a thermal oxidation process; its thickness can be set to... The silicon dioxide underlayer is used to provide optical isolation and mode constraint for the optical waveguide in the active optical waveguide layer. By reducing the propagation loss caused by the leakage of the optical field to the silicon substrate, it improves the stability of long-distance optical signal transmission.

[0041] like Figure 1 and Figure 2 As shown, the central region of the passive electrical interconnect layer is provided with a... A matrix-arranged chiplet array. Here, m represents the number of rows in the chiplet array, and k represents the number of columns.

[0042] like Figure 1As shown, the chip array includes multiple heterogeneous functional chips, each capable of performing functions such as computing, storage, control, communication acceleration, or artificial intelligence inference. For example, chips may include compute chips, memory chips, control chips, AI accelerator chips, and other functional chips.

[0043] All chips are fixed to a pre-defined mounting area of ​​the passive electrical interconnect layer using either wafer-level flip-chip bonding or copper-copper hybrid bonding. Each chip establishes a low-loss, high-speed electrical connection channel with the active optical waveguide layer via a vertical interconnect structure 105 located below the chip. This structure enables electrical signal transmission from the chip to the optical modulation unit 104 and from the optical detection unit 106 to the target chip.

[0044] In some embodiments, such as Figure 2 As shown, a set of lasers 101 are respectively arranged on the first and second sides of the core array. For example, the first side may correspond to the upper edge of the core array, and the second side may correspond to the lower edge of the core array. Each set of lasers 101 is continuously arranged along the horizontal direction of the core array to provide a continuous optical carrier of a preset wavelength to the carrier waveguide in the active optical waveguide layer.

[0045] In some embodiments, such as Figure 2 As shown, a set of fiber optic connectors 102 is provided on the third and fourth sides of the core array. For example, the third side may correspond to the left edge of the core array, and the fourth side may correspond to the right edge of the core array. Each set of fiber optic connectors 102 is continuously arranged along the vertical direction of the core array.

[0046] In some embodiments, such as Figure 1 As shown, the orthogonal layered waveguide network 103 is disposed in the active optical waveguide layer.

[0047] In some embodiments, such as Figure 3 As shown, the orthogonal layered waveguide network 103 includes a carrier waveguide layer and a signal waveguide layer. The carrier waveguide layer and the signal waveguide layer are spaced apart in the thickness direction of the substrate.

[0048] The carrier waveguide layer comprises multiple carrier waveguides, each extending along a first direction. Each carrier waveguide corresponds to a column of cores in the core array.

[0049] The signal waveguide layer comprises multiple signal waveguides, each extending along a second direction orthogonal to the second direction. Each signal waveguide corresponds to a row of cores in the core array.

[0050] In embodiments of the present invention, such as Figure 3 As shown, the orthogonal layered waveguide network 103 consists of a carrier waveguide layer and a signal waveguide layer. The two waveguide layers are spaced apart along the wafer thickness direction inside the active optical waveguide layer and respectively undertake the functions of optical carrier distribution and modulated optical signal transmission. By adopting a layered transmission architecture for different types of optical signals, crosstalk between waveguide layers can be reduced, and the optical signal transmission quality can be improved.

[0051] The carrier waveguide layer comprises k parallel carrier waveguides, each extending vertically along the wafer and corresponding to a column of chips in the chip array. Each carrier waveguide is a silicon-based optical waveguide that meets single-mode transmission requirements. One end of each carrier waveguide is coupled to a laser 101 located at the upper edge of the chip array, and the other end is coupled to a laser 101 located at the lower edge of the chip array. The carrier waveguides transmit the unmodulated laser carrier generated by the laser 101 and distribute the laser carrier of the corresponding wavelength to the optical modulation units 104 in their respective columns. The carrier waveguide layer primarily carries the unmodulated laser carrier and does not carry the modulated optical signal, thus achieving physical isolation between the original laser carrier and the modulated optical signal.

[0052] The signal waveguide layer comprises m parallel signal waveguides, each extending in a horizontal direction orthogonal to the vertical direction and corresponding to a row of cores in the core array. Each signal waveguide is a silicon-based optical waveguide that meets the single-mode transmission requirements. One end of each signal waveguide is coupled to an optical fiber connector 102 located at the left edge of the core array, and the other end of each signal waveguide is coupled to an optical fiber connector 102 located at the right edge of the core array.

[0053] The signal waveguide is used to transmit the optical signal modulated by the corresponding optical modulation unit 104. Multiple modulated optical signals of different wavelengths can be carried simultaneously in the same signal waveguide and transmitted in parallel through wavelength division multiplexing. The modulated optical signals generated by each row of chips are converged through the corresponding signal waveguide and transmitted to the fiber optic connector 102 to realize the centralized output of optical signals inside the wafer.

[0054] According to the above embodiments, by spatially layering the carrier waveguide layer and the signal waveguide layer, with the carrier waveguide layer used for longitudinal optical carrier distribution and the signal waveguide layer used for transversely modulated optical signal transmission, the two waveguide layers are spatially separated and orthogonal to each other in their extension directions, thereby forming a two-dimensional optical interconnect network covering the entire chip array. By functionally decoupling the optical carrier transmission path from the modulated optical signal transmission path, mutual interference between different types of optical signals can be reduced, and the bandwidth density, transmission efficiency, and scalability of the wafer-level optical interconnect system can be improved.

[0055] In some embodiments, each laser 101 is disposed on a first side or a second side of the core array, and each laser 101 is coupled to one end of a corresponding carrier waveguide to inject a set of first optical signals generated thereto into the coupled carrier waveguide. The wavelengths of each first optical signal are different. The first optical signal is a laser carrier.

[0056] In some embodiments, a set of lasers 101 arrays is provided only on the first or second side of the core array. For example, the first side may correspond to the upper edge of the core array, and the second side may correspond to the lower edge of the core array. The output end of each laser 101 is coupled to one end of a corresponding carrier waveguide.

[0057] like Figure 3 As shown, each laser 101 generates a set of laser carriers composed of the same wavelength. Each laser 101 is used to inject this set of laser carriers into a carrier waveguide coupled to it. Each set of laser carriers includes wavelengths of... Multiple laser carriers, each with a different wavelength, are used to transmit this group of laser carriers.

[0058] For example, each laser 101 can be implemented as a distributed feedback laser (DFB laser), a distributed Bragg reflector laser (DBR laser), or an external cavity laser (ECL) to obtain a narrow linewidth, high-stability continuous laser carrier output.

[0059] For example, when At that time, each laser 101 outputs a laser carrier containing 5 different wavelengths, and the wavelength of each laser carrier can be respectively... and .in, It can be set to , It can be set to , It can be set to , It can be set to and It can be set to .

[0060] According to the above embodiments, through the above structure, multiple laser carriers in the same carrier waveguide can be selected and multiplexed as needed by different cores, so that multiple cores can share wavelength resources in the same carrier waveguide, and combined with the subsequent wavelength allocation mechanism, conflict-free parallel optical communication is realized.

[0061] In some embodiments, if two sets of lasers 101 are provided, each first laser in one set of lasers 101 is disposed on the first side of the core array, and the output end of each first laser is coupled to the first end of the corresponding carrier waveguide, so as to inject a set of first optical signals generated into the corresponding carrier waveguide.

[0062] In another set of lasers 101, each second laser is disposed on the second side of the core array. The output end of each second laser is coupled to the second end of the corresponding carrier waveguide, and is used to inject another set of first optical signals into the corresponding carrier waveguide. The wavelengths of each first optical signal are different.

[0063] In this embodiment of the invention, a set of lasers 101 are respectively arranged on the first side and the second side of the chip array. For example, the first side may correspond to the upper edge of the chip array, and the second side may correspond to the lower edge of the chip array.

[0064] A group of k lasers 101 are positioned at the upper edge of the core array, with the output of each laser 101 coupled to one end of a corresponding carrier waveguide. Each laser 101 generates a set of laser carriers composed of the same wavelength. Each laser 101 is used to inject this set of laser carriers into the carrier waveguide coupled to it. Each set of laser carriers includes wavelengths of... Multiple laser carriers, each with a wavelength that does not overlap.

[0065] A group of k lasers 101 are positioned at the lower edge of the core array, with the output of each laser 101 coupled to one end of a corresponding carrier waveguide. Each laser 101 generates a set of laser carriers composed of the same wavelength. Each laser 101 is used to inject this set of laser carriers into the carrier waveguide coupled to it. Each set of laser carriers includes wavelengths of... Multiple laser carriers, each with a wavelength that does not overlap. The wavelength set... With wavelength set Non-overlapping, meaning any wavelength (1≤i≤n) are all different from any wavelength (n+1≤j≤2n).

[0066] in, This is the maximum value between the number of rows and columns in the core array, i.e.:

[0067] In the formula, m represents the number of rows in the core array, and k represents the number of columns in the core array. When the core array is a square array structure, n is equal to the number of rows and columns in the core array.

[0068] The carrier waveguide is used to transmit the set of laser carriers. Since a set of lasers 101 are connected to each end of the same carrier waveguide, a dual-end injection optical carrier structure is formed. By providing optical carriers from both ends of the carrier waveguide simultaneously, the propagation distance of part of the optical carrier can be shortened, compensating for the propagation loss generated during long-distance waveguide transmission, thereby improving the uniformity of optical power obtained by the chips at various locations in the wafer-level optical interconnect system.

[0069] For example, the spacing between adjacent wavelength channels can be configured according to the design requirements of the wavelength division multiplexing system, such as using the 100 GHz, 50 GHz or 25 GHz channel spacing specified in the ITU-T DWDM standard, to meet the design requirements of system bandwidth, device size and wavelength selectivity.

[0070] In some embodiments, such as Figure 4 As shown, a group of lasers 101 disposed on the upper edge of the core array generate a group of first optical signals, each group of first optical signals including wavelengths of... Multiple first optical signals are generated. Laser 101 injects this set of first optical signals into a carrier waveguide coupled to it. Another set of lasers 101, located at the lower edge of the core array, generates another set of first optical signals, which include wavelengths of... Multiple first optical signals are generated, and another set of first optical signals is injected into a carrier waveguide coupled thereto. The wavelength set... With wavelength set Non-overlapping, meaning any wavelength (1≤i≤n) are all different from any wavelength (n+1≤j≤2n).

[0071] Among them, wavelength Optical signal transmission corresponding to the first transmission direction, wavelength Optical signal transmission corresponding to the second transmission direction. The first transmission direction is opposite to the second transmission direction. For example, using wavelength... The second optical signal, modulated at any wavelength, can be transmitted via the corresponding signal waveguide to the fiber optic connector 102 at the right edge of the core array. Wavelength is used. The second optical signal, modulated by any wavelength, can be transmitted to the fiber optic connector 102 at the left edge of the core array via the corresponding signal waveguide. Alternatively, the correspondence between the two sets of wavelengths and the left and right transmission directions can be interchanged.

[0072] For example, the wavelengths corresponding to different transmission directions are not divided according to continuous wavelength intervals, but are interleaved according to a preset rule. For instance, odd-numbered wavelengths correspond to the first transmission direction, and even-numbered wavelengths correspond to the second transmission direction. Wherein, wavelength... Corresponding to the first transmission direction, wavelength This corresponds to the second transmission direction. Through the above method, while maintaining bidirectional communication capabilities, effective isolation of wavelength resources in different transmission directions can be achieved, facilitating the subsequent establishment of the correspondence between chip numbers and dedicated wavelengths.

[0073] It should be noted that the above-described transmission direction setting method and wavelength allocation method are merely illustrative examples. Those skilled in the art can adjust the correspondence between transmission direction and wavelength according to actual application requirements. For example, continuous wavelength allocation method, staggered wavelength allocation method, or other wavelength allocation method can be used to achieve bidirectional optical signal transmission. This invention does not limit this.

[0074] According to the above embodiments, by setting two sets of lasers on opposite sides of the chip array and injecting first optical signals of different wavelengths into the corresponding carrier waveguides by the two sets of lasers respectively, a dual-end optical carrier supply mechanism can be constructed inside the wafer. This structure can effectively shorten the transmission distance of part of the optical carrier, reduce the optical power attenuation during long-distance waveguide transmission, and improve the uniformity of optical carrier power obtained by each chip, thereby improving the working stability of the optical modulation unit and the quality of optical signal transmission. At the same time, since the wavelengths of the optical signals generated by the two sets of lasers do not overlap, independent wavelength support is provided for different transmission directions, avoiding wavelength conflict and channel competition, improving wavelength resource utilization and system communication capacity, and facilitating the realization of high-bandwidth, low-loss optical interconnects for large-scale chip arrays.

[0075] In some embodiments, such as Figure 2 As shown, the fiber optic connector 102 includes a first fiber optic connector and a second fiber optic connector.

[0076] Each first fiber optic connector is located on the third side of the core array and is coupled to the first end of the corresponding signal waveguide.

[0077] Each second fiber optic connector is located on the fourth side of the core array and is coupled to the second end of the corresponding signal waveguide.

[0078] In this embodiment of the invention, a set of fiber optic connectors 102 are bonded and integrated on the third and fourth sides of the chip array using a high-precision end-face coupling process. Each fiber optic connector 102 is used to uniformly output the modulated optical signal to an external fiber optic link to realize off-chip communication.

[0079] For example, the third side corresponds to the left edge of the core array, and the fourth side corresponds to the right edge of the core array. A set of m fiber optic connectors 102 is disposed on the left edge of the core array, and each fiber optic connector 102 is coupled to one end of the corresponding signal waveguide via an edge coupler or a grating coupler. A set of m fiber optic connectors 102 is disposed on the lower edge of the core array, and each fiber optic connector 102 is coupled to one end of the corresponding signal waveguide via an edge coupler or a grating coupler. The fiber optic connectors 102 can be implemented using a single-mode fiber array or an MT multi-core fiber array.

[0080] According to the above embodiments, by setting multiple sets of fiber optic connectors on both sides of the chip array, the optical signals generated by each chip can be converged inside the wafer and then output to external switches, servers, optical network devices or other wafer-level computing nodes through a unified interface, thereby constructing a high-bandwidth optical interconnect system for large-scale heterogeneous chip arrays.

[0081] In some embodiments, such as Figure 1 As shown, each optical modulation unit 104 is disposed in the active optical waveguide layer. The optical modulation unit 104 includes: a micro-ring resonator, an electro-optic modulator, and a vertical interconnect structure 105.

[0082] The micro-ring resonator is connected to the electro-optic modulator to resonate and couple with the target wavelength of the corresponding core based on the harmonic wavelength, so as to extract the first optical signal corresponding to the target wavelength from the carrier waveguide corresponding to the core.

[0083] The electro-optic modulator is connected to the corresponding chip via a vertical interconnect structure 105. It receives the first electrical signal output by the chip and modulates the first electrical signal onto the first optical signal to obtain a second optical signal carrying the first electrical signal. The target wavelength is the chip's proprietary wavelength or proprietary wavelength pair.

[0084] In embodiments of the present invention, such as Figure 5As shown, each core chip is provided with at least one dedicated resonant frequency-selective optical modulation unit 104. Each optical modulation unit 104 is disposed in the active optical waveguide layer directly below the corresponding core chip and is electrically connected to the corresponding core chip through a vertical interconnect structure 105.

[0085] Each optical modulation unit 104 includes a dual microring resonator, an electro-optic modulator, and a vertical interconnect structure 105.

[0086] The dual microring resonator is coupled to a corresponding carrier waveguide to select a specific wavelength pair for the corresponding core from the carrier waveguide. The dual microring resonator includes a first microring resonator and a second microring resonator.

[0087] For example, the resonant wavelength of the first microring resonator matches the specific wavelength corresponding to the first transmission direction of the corresponding core particle, and the resonant wavelength of the second microring resonator matches the specific wavelength corresponding to the second transmission direction of the corresponding core particle. The first transmission direction and the second transmission direction are opposite.

[0088] Because the microring resonator only generates significant resonant coupling for optical signals that match its resonant wavelength, when an optical signal of a specific wavelength propagates in the carrier waveguide to the vicinity of the microring resonator, the optical signal corresponding to that specific wavelength is selectively coupled to the corresponding microring resonator, while other optical signals of non-specific wavelengths continue to propagate along the carrier waveguide. This structure enables frequency selective extraction of specific wavelengths, achieving lossless separation of specific wavelengths from the carrier waveguide, thereby reducing crosstalk between signals of different wavelengths.

[0089] The dual microring resonator is optically connected to the electro-optic modulator, and it also transmits the extracted first optical signal to the electro-optic modulator. The electro-optic modulator can employ a carrier-depletion microring modulator structure. It utilizes the plasma dispersion effect of silicon to achieve high-speed optical modulation and supports modulation formats such as NRZ (Non-Return-to-Zero) and PAM4 (Pulse Amplitude Modulation-4).

[0090] The electro-optic modulator is connected to the corresponding chip via a vertical interconnect structure 105. This vertical interconnect structure 105 can be implemented using copper-copper hybrid bonding pads, through-silicon vias (TSVs), or other three-dimensional integrated interconnect structures. The electro-optic modulator receives the high-speed electrical signal output from the corresponding chip and modulates this electrical signal onto a first optical signal of a corresponding specific wavelength to generate a second optical signal carrying the electrical signal, thereby completing the conversion from electrical signal to optical signal.

[0091] According to the above embodiments, by setting optical modulation units corresponding one-to-one with the core particles in the active optical waveguide layer, and using micro-ring resonators to selectively extract the first optical signal corresponding to the target wavelength, precise frequency selection of optical signals of different wavelengths in the carrier waveguide is achieved, reducing crosstalk and interference risks between different wavelength signals and improving the reliability of wavelength multiplexing transmission. Simultaneously, the electro-optic modulator directly receives the first electrical signal output from the corresponding core particle through a vertical interconnect structure and modulates the first electrical signal onto the extracted first optical signal, achieving high-speed conversion from electrical signal to optical signal, shortening the electrical interconnect path, and reducing interconnect delay and transmission power consumption. Furthermore, the one-to-one correspondence between the optical modulation units and the core particles facilitates parallel optical communication of large-scale core particle arrays, improving system bandwidth density, data transmission efficiency, and the scalability of the wafer-level optical interconnect system.

[0092] In some embodiments, the optical modulation unit 104 further includes a wavelength thermally tuned electrode disposed on the microring resonator. The wavelength thermally tuned electrode is used to adjust the resonant wavelength of the microring resonator based on the thermo-optical effect.

[0093] In this embodiment of the invention, the optical modulation unit 104 further includes a thermally tuned electrode. The thermally tuned electrode is disposed above the corresponding microring resonator and thermally coupled to the microring resonator. The thermally tuned electrode can be implemented using a metal thin-film heater, such as titanium (Ti), tungsten (W), titanium nitride (TiN), or other resistance heating materials suitable for silicon photonics processes.

[0094] When a tuning current is applied to the wavelength-thermally tuned electrode, the electrode generates Joule heat, which is then transferred to the corresponding microring resonator. Due to the thermo-optic effect of silicon, the effective refractive index of the microring resonator changes as its temperature rises, causing a drift in the resonant wavelength. By adjusting the driving current or driving voltage of the wavelength-thermally tuned electrode, the resonant wavelength of the microring resonator can be finely adjusted to match a specific wavelength.

[0095] According to the above embodiments, the wavelength thermally tunable electrode can be used to compensate for the resonant wavelength shift caused by process factors such as photolithography errors, etching errors, thin film thickness fluctuations, and material refractive index deviations during wafer manufacturing. Simultaneously, the wavelength thermally tunable electrode can also compensate for resonant wavelength drift caused by factors such as ambient temperature changes and device self-heating, thereby improving the frequency selection accuracy and wavelength stability of the microring resonator, ensuring accurate extraction of the target wavelength optical signal by the optical modulation unit, and improving the system's consistency, reliability, and wafer-level batch manufacturing capabilities.

[0096] In some embodiments, the active optical waveguide layer is further provided with multiple unidirectional coupling structures, each unidirectional coupling structure being disposed between the corresponding optical modulation unit 104 and its corresponding signal waveguide. The electro-optic modulator injects the second optical signal into the signal waveguide through the unidirectional coupling structure, and transmits the second optical signal through the signal waveguide to the corresponding first optical fiber connector or second optical fiber connector.

[0097] In this embodiment of the invention, the active optical waveguide layer is further provided with multiple unidirectional coupling structures. Each unidirectional coupling structure is disposed between the corresponding optical modulation unit 104 and the corresponding signal waveguide, and is used to realize the directional coupling transmission of the modulated optical signal to the signal waveguide.

[0098] For example, the unidirectional coupling structure can be implemented using an asymmetric grating coupler, an asymmetric directional coupler, a directional coupler, or other optical coupling structures with direction selectivity.

[0099] After the electro-optic modulator completes the modulation of the first optical signal, it generates a second optical signal carrying the corresponding core data information. The second optical signal is coupled to the corresponding signal waveguide via a unidirectional coupling structure and propagates in the signal waveguide along a preset transmission direction. Because the unidirectional coupling structure has direction selectivity, it can improve the coupling efficiency of the modulated optical signal to the signal waveguide and reduce the probability of the back-propagating light in the signal waveguide returning to the electro-optic modulator or carrier waveguide.

[0100] The second optical signal, after being injected into the signal waveguide through the unidirectional coupling structure, can be transmitted along the corresponding signal waveguide to the first or second optical fiber connector located at the edge of the chip array, and coupled out to the outside of the wafer through the optical fiber connector 102 to realize data interaction between the wafer-level chip array and external computing nodes, storage nodes or optical communication networks.

[0101] According to the above embodiments, by setting a unidirectional coupling structure between the optical modulation unit and the signal waveguide, optical reflection, parasitic feedback, and crosstalk interference between different optical paths can be reduced, thereby improving the transmission stability and signal integrity of the modulated optical signal. Simultaneously, unnecessary coupling interference between the optical carrier in the carrier waveguide and the modulated optical signal in the signal waveguide can be avoided, thus improving the transmission reliability of the wafer-level optical interconnect system.

[0102] For example, the specific wavelength pair corresponding to core 1 is Among them, wavelength Corresponding to the first transmission direction, i.e., transmission to the left. Wavelength This corresponds to the second transmission direction, which is to the right.

[0103] When the laser 101 at the upper edge generates wavelengths containing respectively After multiple laser carriers, the aforementioned set of laser carriers propagates downwards through the carrier waveguide corresponding to core 1. When the wavelength When the light propagates to the position of the optical modulation unit 104 corresponding to core 1, the first micro-ring resonator in the dual micro-ring resonator is synchronized with the wavelength. Resonant coupling occurs, and wavelengths are selectively extracted from the carrier waveguide. The corresponding laser carrier is then transmitted to the electro-optic modulator.

[0104] Simultaneously, core 1 outputs an electrical signal to the electro-optic modulator via the vertical interconnect structure 105. The electro-optic modulator modulates the electrical signal to a wavelength... On the corresponding laser carrier, an optical signal carrying the output electrical signal of core 1 is obtained. Subsequently, this optical signal is injected into the signal waveguide corresponding to core 1 through a unidirectional coupling structure, and transmitted to the left to the left fiber optic connector, and then output to the outside of the wafer through the left fiber optic connector.

[0105] Similarly, the laser 101 at the lower edge generates wavelengths including... After multiple laser carriers, the aforementioned set of laser carriers propagates upward through the carrier waveguide corresponding to core 1. When the wavelength When the light propagates to the position of the optical modulation unit 104 corresponding to core 1, the second microring resonator in the dual microring resonator is synchronized with the wavelength. Resonant coupling occurs, and the wavelength is extracted from the carrier waveguide. The corresponding laser carrier is transmitted to the electro-optic modulator. The electro-optic modulator receives the electrical signal output from chip 1 and modulates it to a wavelength... On the corresponding laser carrier, an optical signal carrying the output electrical signal of core 1 is obtained. This optical signal is injected into the corresponding signal waveguide through a unidirectional coupling structure and transmitted to the right to the right fiber optic connector, from where it is output to the outside of the wafer.

[0106] Therefore, core 1 can utilize wavelengths respectively. and wavelength This enables parallel optical signal transmission in two opposite directions. and Only the dual micro-ring resonator corresponding to core 1 is used for extraction and modulation, and other cores will not occupy the above wavelength, thus realizing conflict-free bidirectional optical communication based on dedicated wavelength pairs.

[0107] In some embodiments, such as Figure 1 As shown, multiple photodetector units 106 are also disposed on the active optical waveguide layer. Each photodetector unit 106 corresponds to a chip. Each photodetector unit 106 includes: a microring resonator, a photodetector, and a vertical interconnect structure 105; The microring resonator is connected to the photodetector to resonate and couple with the target wavelength of the corresponding core particle based on the harmonic wavelength, so as to extract the second optical signal corresponding to the target wavelength from the signal waveguide corresponding to the core particle. The photodetector is connected to the corresponding core through the vertical interconnect structure 105 to convert the second optical signal into a second electrical signal and transmit the second electrical signal to the target core through the vertical interconnect structure 105.

[0108] In this embodiment of the invention, each core corresponds to at least one photodetector unit 106. Each photodetector unit 106 is disposed in the active optical waveguide layer directly below the corresponding core and is electrically connected to the corresponding core through a vertical interconnect structure 105.

[0109] Each photodetector unit 106 includes a microring resonator, a photodetector, and a vertical interconnect structure 105. The microring resonator is coupled to a corresponding signal waveguide to obtain a second optical signal corresponding to the specific wavelength of the chip from the signal waveguide. The microring resonator can be a dual microring resonator. The photodetector converts the second optical signal into a second electrical signal, which is then transmitted to the corresponding chip via the vertical interconnect structure 105. The vertical interconnect structure 105 can be implemented using copper-copper hybrid bonding pads (Cu-Cu Hybrid Bonding Pad), through-silicon vias (TSVs), or other three-dimensional integrated interconnect structures.

[0110] Each photodetector unit 106 includes at least one photodetector. Each photodetector may be implemented using a germanium-silicon photodetector, an avalanche photodiode (APD), or other photodetectors suitable for silicon photonics platforms.

[0111] Multiple microring resonators are arranged beneath each core, each corresponding to a different specific wavelength. For example, in addition to the microring resonator corresponding to the specific wavelength of its own core, microring resonators that match the specific wavelengths of other cores can also be arranged. When the second optical signal of the corresponding wavelength propagates in the signal waveguide to the position of the photodetector 106, the corresponding microring resonator absorbs the second optical signal and transmits it to the photodetector. The photodetector converts the second optical signal into a second electrical signal and transmits it to the corresponding core through the vertical interconnect structure 105, thereby realizing the data reception function between different cores. The receiving wavelength of the photodetector 106 can be dynamically changed by adjusting the resonant wavelength of the microring resonator.

[0112] For example, the system operation can be divided into an off-chip communication period and an on-chip communication period. During the off-chip communication period, the receiving wavelength of the photodetector unit 106 is configured to be the exclusive wavelength corresponding to its own chip to receive the off-chip optical signal returned via the fiber optic connector 102. During the on-chip communication period, the receiving wavelength of the photodetector unit 106 is adjusted to the exclusive wavelength corresponding to the target chip to receive the second optical signal sent by the target chip. After the photodetector unit 106 converts the received second optical signal into a second electrical signal, it transmits it to the corresponding chip through the vertical interconnect structure 105, thereby realizing data exchange between multiple chips within the wafer.

[0113] According to the above embodiments, through the above structure, the optical detection unit can not only complete the photoelectric signal reception between the chip and external devices, but also realize the data reception function between chips inside the wafer through the wavelength switching mechanism, thereby supporting the sharing of the same optical interconnect infrastructure for on-chip communication and off-chip communication, improving wavelength resource utilization, interconnect bandwidth utilization and overall system integration.

[0114] For example, the illustration will be given by taking the example of chip 1 sending data to chip 4.

[0115] In this embodiment, the dedicated wavelength pair corresponding to core 1 is The dedicated wavelength pair corresponding to core 4 is .

[0116] The laser 101 at the upper edge generates wavelengths of respectively and Multiple laser carriers are distributed through a corresponding carrier waveguide core array. When the wavelength When the light propagates to the position of the optical modulation unit 104 corresponding to core 1, the first micro-ring resonator in the dual micro-ring resonator is synchronized with the wavelength. Resonant coupling occurs, and the wavelength is extracted from the carrier waveguide. The corresponding first optical signal is transmitted to the electro-optic modulator.

[0117] Subsequently, chip 1 converts the data D1 to be transmitted into a first electrical signal and transmits it to the corresponding electro-optic modulator via the vertical interconnect structure 105. The electro-optic modulator modulates the first electrical signal to a wavelength... A second optical signal carrying data D1 is generated on the corresponding first optical signal. The second optical signal is injected into the corresponding signal waveguide through a unidirectional coupling structure and propagates along the signal waveguide.

[0118] When the clock cycle is in on-chip communication mode, the micro-ring resonator in the photodetector unit 106 corresponding to chip 4 will change its resonant wavelength from its corresponding dedicated wavelength. Adjust to wavelength The microring resonator receives the second optical signal transmitted by core 1. When the second optical signal propagates to the position of the photodetector unit 106 corresponding to core 4, the microring resonator extracts the wavelength from the signal waveguide. The corresponding second optical signal is converted into a second electrical signal using a germanium-silicon photodetector. The second electrical signal is transmitted to chip 4 through the vertical interconnect structure 105. Chip 4 decodes the second electrical signal to obtain data D1, thereby completing the data transmission process from chip 1 to chip 4.

[0119] When the clock cycle is in off-chip communication mode, the resonant wavelength of the photodetector unit 106 corresponding to chip 4 remains the exclusive wavelength of this chip. or It is used to receive optical signals sent to chip 4 by external devices. In on-chip communication mode, the resonant wavelength of the photodetector unit 106 corresponding to chip 4 can be dynamically adjusted to the exclusive wavelength corresponding to the target transmitting chip, so as to realize data exchange between different chips inside the wafer.

[0120] According to the above embodiments, by setting photodetector units corresponding one-to-one with the chips in the active optical waveguide layer, each chip can directly receive and photoelectrically convert the second optical signal in the signal waveguide, achieving efficient recovery of the optical signal into an electrical signal. This signal is then directly transmitted to the target chip via a vertical interconnect structure, reducing intermediate forwarding links and additional electrical interconnect overhead, thus lowering system transmission latency and power consumption. Simultaneously, the correspondence between photodetector units and chips facilitates parallel data reception of large-scale chip arrays, improving system bandwidth density and data throughput. Furthermore, the photodetector units can receive off-chip communication signals corresponding to their own chip's specific wavelength, and can also dynamically receive optical signals sent by other chips in on-chip communication mode. This achieves a unified optical interconnect architecture for on-chip and off-chip communication, improving wavelength resource utilization, system integration, and the flexibility and scalability of the wafer-level optical interconnect system.

[0121] This application provides a wafer-level chip-based optoelectronic co-packaging method, applied to the aforementioned wafer-level chip-based optoelectronic co-packaging system. This wafer-level chip-based optoelectronic co-packaging method and the wafer-level chip-based optoelectronic co-packaging system in one embodiment of this application are based on the same inventive concept and have similar problem-solving principles. Therefore, the implementation of the wafer-level chip-based optoelectronic co-packaging method is the same as the implementation of the wafer-level chip-based optoelectronic co-packaging system in one embodiment of this application, and repeated details will not be described again. As used below, the terms "unit" or "module" can refer to a combination of software and / or hardware that performs a predetermined function. Although the system described in the following embodiments is preferably implemented in software, hardware implementation, or a combination of software and hardware, is also possible and contemplated.

[0122] like Figure 6 As shown, the wafer-level chip-based optoelectronic co-packaging method is applied to the above-mentioned optoelectronic co-packaging system, including: S601 to S603.

[0123] S601: Number each core in the core array according to a pre-established Latin matrix.

[0124] S602: Assign a target wavelength to each core chip based on the core chip number. Each core chip number corresponds to a unique target wavelength.

[0125] S603: The control optical modulation unit 104 extracts the corresponding first optical signal from the carrier waveguide according to the corresponding target wavelength and modulates it to obtain the modulated second optical signal. The target wavelength is the dedicated wavelength or dedicated wavelength pair.

[0126] In this invention, to address issues such as wavelength resource allocation conflicts, carrier waveguide resource competition, and low wavelength reuse efficiency in large-scale chip arrays, a chip numbering and wavelength allocation mechanism based on a Latin matrix is ​​proposed. The Latin matrix includes two forms: Latin square and Latin rectangle. When the chip array is a square array structure, a Latin square can be used for numbering. When the chip array is a non-square array structure, a Latin rectangle can be used for numbering.

[0127] In some embodiments, such as Figure 7 As shown, S601 includes S701 to S702.

[0128] S701: Assign a different chip number to each chip in each row of the chip array according to each row of the Latin matrix. The target wavelengths corresponding to the chips in the same signal waveguide do not overlap.

[0129] S702: Assign different chip numbers to multiple chips in each column of the chip array according to each column of the Latin matrix. The target wavelengths corresponding to the chips in the same carrier waveguide do not overlap.

[0130] In this embodiment, a 5×5 Latin square is used as an example. In a 5×5 matrix, five different core numbers are used to fill the space, ensuring that each core number appears only once in any row and only once in any column. For example:

[0131] Each core is assigned a unique wavelength pair. Wherein:

[0132] Based on the above correspondence, the wavelength allocation result of the entire core array can be obtained:

[0133] It can be seen that the dedicated wavelength pair corresponding to the same number is not fixed to a certain physical location, but is distributed cyclically throughout the entire core array according to the Latin square array rule.

[0134] For example, the wavelength pair corresponding to number 1 They appeared in the positions respectively , , , and Therefore, wavelength and Instead of serving a single, fixed position for an extended period, the core is rotated and reused throughout the entire array.

[0135] According to the above embodiments, in traditional schemes, the same wavelength is bound to a chip at a fixed position for a long time, resulting in uneven utilization of wavelength resources. However, the present invention achieves uniform distribution of wavelengths throughout the chip array through a Latin matrix constructed by cyclic shifting, enabling different wavelength resources to be reused by chips at multiple physical locations.

[0136] In some embodiments, when the size of the core array is expanded, it is only necessary to add a corresponding number of lasers 101, fiber optic connectors 102 and wavelength numbers according to the array size, and generate a new Latin matrix according to the same cyclic shift rule, so as to maintain the allocation characteristics of non-repeating numbers in any row and non-repeating numbers in any column, without changing the core architecture such as the orthogonal layered waveguide network 103, optical modulation unit 104 and optical detection unit 106.

[0137] Based on the aforementioned Latin matrix allocation mechanism, in any row of cores corresponding to a signal waveguide, the dedicated wavelength pairs of each core are distinct, thereby reducing the risk of wavelength conflict within the same signal waveguide. Simultaneously, in a column of cores corresponding to any carrier waveguide, the dedicated wavelength pairs of each core are also distinct, thus preventing multiple cores from simultaneously competing for the same wavelength optical carrier. By using only 2n different wavelengths to support parallel communication of m×k cores, the utilization rate of wavelength resources and the system's scalability are improved.

[0138] In some embodiments, such as Figure 2 As shown, the wafer substrate layer uses a 12-inch (300 mm) single-crystal silicon wafer as the basic carrier, and a silicon dioxide (SiO2) cladding layer with a thickness of 15 μm is formed on the surface of the wafer substrate through a thermal oxidation process.

[0139] The wafer's central region integrates a 5x5 two-dimensional array of AI computing chips, totaling 25 functional chips. Each chip is integrated with the underlying active optical waveguide layer using a wafer-level copper-copper hybrid bonding process, and is electrically connected to the corresponding optical modulation unit 104 and photodetector unit 106 via a vertical interconnect structure 105 to achieve high-speed electrical signal input and output.

[0140] A set of lasers 101 is integrated at the upper and lower edges of the chip array, with each set containing five lasers 101. Each laser 101 uses a C-band continuous wave laser source and employs a wavelength division multiplexing (WDM) scheme with a 200 GHz wavelength spacing. The lasers 101 located at the upper edge of the chip array are used to generate lasers with a wavelength of... The first optical signal, in which, , , , and These correspond to wavelengths of 1550.0 nm, 1551.6 nm, 1553.2 nm, 1554.8 nm, and 1556.4 nm, respectively. Each laser 101, positioned at the lower edge of the core array, generates wavelengths of... The first optical signal, in which, , , , and These correspond to wavelengths of 1558.0 nm, 1559.6 nm, 1561.2 nm, 1562.8 nm, and 1564.4 nm, respectively. Wavelength With wavelength They do not overlap, thus forming two independent sets of wavelength resources to support optical signal transmission in opposite directions.

[0141] The left and right edges of the core array each integrate a set of MT-type multi-core fiber arrays. Each fiber array contains five fiber connectors 102, each of which is coupled to a corresponding signal waveguide to enable coupling and transmission between the internal optical signal and the external optical communication link. Each fiber connector 102 supports high-speed optical signal transmission in PAM4 modulation format.

[0142] For example, a silicon microfluidic cooling structure is also formed on the back side of the wafer substrate. The coolant can circulate inside the microfluidic channel to quickly dissipate the heat generated during the operation of the chip array, laser 101 array and optoelectronic devices, thereby meeting the heat dissipation requirements of the high-computing-power chip system.

[0143] The active optical waveguide layer is fabricated using CMOS-compatible silicon photonics technology. The waveguide core layer is formed using a 220 nm thick single-crystal silicon material, and the upper cladding layer is formed using a 10 μm thick silicon dioxide material. An orthogonal layered waveguide network 103 is constructed inside the active optical waveguide layer. The orthogonal layered waveguide network 103 includes 5 vertical carrier waveguides and 5 horizontal signal waveguides. The 5 carrier waveguides correspond to the 5 columns of the core array and are used to transmit the first optical signal generated by the laser 101. The 5 signal waveguides correspond to the 5 rows of the core array and are used to transmit the modulated second optical signal.

[0144] Each core chip has a corresponding optical modulation unit 104 located below it. Each optical modulation unit 104 includes: a dual microring resonator, an electro-optic modulator, a wavelength thermally tuned electrode, and a vertical interconnect structure 105. The two microring resonators in the dual microring resonator correspond to the specific wavelength pair of this core chip, used to selectively extract the first optical signal corresponding to the specific wavelength from the corresponding carrier waveguide. The electro-optic modulator adopts a carrier-depletion microring modulator structure and supports NRZ and PAM4 modulation formats. A wavelength thermally tuned electrode is integrated above each microring resonator, which dynamically adjusts the resonant wavelength of the microring resonator through thermo-optic effects to compensate for wavelength shifts caused by factors such as lithography errors, etching errors, and temperature drift.

[0145] Each optical modulation unit 104 is coupled to its corresponding signal waveguide using a unidirectional coupling structure. The unidirectional coupling structure is implemented using an asymmetric grating coupler, which is used to directionally inject the modulated second optical signal into the corresponding signal waveguide, while reducing parasitic feedback and crosstalk interference caused by the back-propagating light returning to the modulator.

[0146] Each chip also has a corresponding photodetector unit 106 below it. The photodetector unit 106 includes at least one microring resonator, a germanium-silicon photodetector, and a vertical interconnect structure 105. In off-chip communication mode, the microring resonator receives a second optical signal matching the wavelength specific to its chip. In on-chip communication mode, the microring resonator dynamically adjusts the receiving wavelength according to the wavelength corresponding to the target transmitting chip, thereby enabling data reception and exchange between different chips.

[0147] In this embodiment, a Latin square-based chip numbering mechanism is used to number the 5×5 chip array. Specifically, the first row of chips is numbered 1, 2, 3, 4, 5; the second row is numbered 2, 3, 4, 5, 1; the third row is numbered 3, 4, 5, 1, 2; the fourth row is numbered 4, 5, 1, 2, 3; and the fifth row is numbered 5, 1, 2, 3, 4. Each number corresponds to a specific wavelength pair, where number 1 corresponds to... Number 2 corresponds to Number 3 corresponds to Number 4 corresponds to Number 5 corresponds to By using the aforementioned cyclic shift Latin square allocation method, it can be ensured that the target wavelengths corresponding to any row of cores are not repeated, and the target wavelengths corresponding to any column of cores are also not repeated. This reduces wavelength conflicts in the same signal waveguide and wavelength competition in the same carrier waveguide, thereby improving wavelength resource utilization and system scalability.

[0148] The following is combined Figure 2 The working process of the optoelectronic co-packaging system in the embodiments of the present invention will be described.

[0149] After the optoelectronic co-packaging system is started, two sets of lasers 101 located at the upper and lower edges of the chip array each generate a set of laser carriers. Specifically, each upper edge laser 101 generates a set of laser carriers with a wavelength of... The laser carrier wave, and each lower edge laser 101 generates a set of wavelengths. The laser carriers are injected into the orthogonal layered waveguide network 103 through their respective carrier waveguides and propagate in the corresponding carrier waveguides in the vertical direction, thereby providing wavelength division multiplexing optical carriers to the optical modulation units 104 corresponding to the entire array of chips, so as to realize optical carrier distribution across the entire wafer.

[0150] For example, let's take chip 2, located in row 2, column 1, as an example. According to the Latin square numbering rule, this position corresponds to number 2, and its specific wavelength pair is... When containing and When the laser carrier propagates in the carrier waveguide to the corresponding position of the core 2, the dual micro-ring resonators in the optical modulation unit 104 are respectively connected to the wavelength and wavelength Resonant coupling occurs, and wavelengths are selectively extracted from the carrier waveguide. and wavelength The corresponding first optical signal is transmitted to the corresponding electro-optic modulator. The optical carriers of other wavelengths continue to propagate along the carrier waveguide for extraction and use by the optical modulation units 104 corresponding to other chips in the same column.

[0151] Meanwhile, after completing neural network inference, matrix calculation, or other data processing tasks, core 2 encodes the data to be transmitted into a PAM4 format electrical signal and transmits it to the corresponding electro-optic modulator via copper-copper hybrid bonding pads. The electro-optic modulator uses this electrical signal to modulate the wavelength... and wavelength The corresponding first optical signal is modulated to generate a second optical signal carrying the output data information of the core 2, thereby completing the conversion process from electrical signal to optical signal.

[0152] After modulation, wavelength The corresponding second optical signal is injected into the signal waveguide in the second row through a unidirectional coupling structure and propagates to the left. Wavelength The corresponding second optical signal is injected into the same signal waveguide through a unidirectional coupling structure and propagates to the right. Since the five cores in the same row correspond to different dedicated wavelength pairs, multiple second optical signals transmitted in the same signal waveguide have different wavelengths, and can be transmitted in parallel in the same signal waveguide using wavelength division multiplexing (WDM).

[0153] After each core has completed optical signal modulation, the second optical signal propagating to the right gradually converges to the fiber optic connector 102 on one side of the core array, and is then coupled out to the outside of the wafer via the corresponding MT fiber array. The second optical signal propagating to the right converges to the fiber optic connector 102 on the other side of the core array, and is also coupled out to the outside of the wafer via the corresponding MT fiber array. With the above structure, parallel convergence and unified external transmission of output data from all 25 cores in the 5×5 core array can be achieved.

[0154] In on-chip communication scenarios, the second optical signal sent by any chip can also be transmitted to the target chip through the corresponding signal waveguide. For example, when chip 2 needs to send data to chip 4, chip 2 uses its dedicated wavelength. or The first optical signal is modulated, and the modulated second optical signal is injected into the corresponding signal waveguide. The photodetector unit 106 corresponding to the target chip 4 dynamically adjusts the received wavelength to match the target chip 4. or A matching resonant wavelength is used to extract the corresponding second optical signal from the signal waveguide, and this signal is converted into a second electrical signal using a germanium-silicon photodetector. Subsequently, the second electrical signal is transmitted to chip 4 via the vertical interconnect structure 105, enabling data exchange between chip 2 and chip 4.

[0155] According to the above embodiments, through the above process, the optoelectronic co-packaging system can simultaneously support high-speed optical communication outside the wafer and optical communication between chips inside the wafer. On the same set of orthogonal layered waveguide networks, it can realize carrier distribution, optical signal modulation, wavelength division multiplexing transmission, unified external output, and on-chip data exchange, thereby improving the system bandwidth density, wavelength resource utilization, and the scalability of large-scale chip arrays.

[0156] In the description of this specification, the references to terms such as "an embodiment," "a specific embodiment," "some embodiments," "for example," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0157] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above descriptions are merely specific embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A wafer-level chip-based optoelectronic co-packaging system, characterized in that, include: The substrate comprises a substrate layer and a core bonding layer. A core array is disposed at a preset position in the core bonding layer; each core in the core array is used to perform data operations and output a first electrical signal. Each laser and each fiber optic connector passes through the core bonding layer and is integrated on the substrate layer; each laser and each fiber optic connector are located on the periphery of the core array and are respectively connected to the orthogonal layered waveguide network; the laser is used to generate a first optical signal corresponding to the target wavelength of each core. The optical modulation unit corresponds one-to-one with the core chip. The optical modulation unit is used to receive the first optical signal corresponding to the orthogonal layered waveguide network and the first electrical signal output by the corresponding core chip, and modulate the first optical signal based on the first electrical signal to generate a modulated second optical signal; and transmit the second optical signal to the optical fiber connector through the orthogonal layered waveguide network.

2. The system according to claim 1, characterized in that, The core bonding layer includes a passive conductive layer and an active optical waveguide layer, wherein the active optical waveguide layer is located between the passive conductive layer and the substrate layer; and the orthogonal layered waveguide network is disposed in the active optical waveguide layer.

3. The system according to claim 2, characterized in that, The orthogonal layered waveguide network includes: a carrier waveguide layer and a signal waveguide layer; the carrier waveguide layer and the signal waveguide layer are spaced apart in the thickness direction of the substrate; The carrier waveguide layer includes multiple carrier waveguides, each of which extends along a first direction; each carrier waveguide corresponds to a column of cores in the core array. The signal waveguide layer includes multiple signal waveguides, each extending along a second direction orthogonal to the first direction; each signal waveguide corresponds to a row of cores in the core array.

4. The system according to claim 3, characterized in that, Each laser is disposed on the first or second side of the core array, and the output end of each laser is coupled to one end of the corresponding carrier waveguide to inject a set of first optical signals into the corresponding carrier waveguide; wherein, the wavelengths of each first optical signal are different.

5. The system according to claim 3, characterized in that, If two sets of lasers are set, each first laser in one set of lasers is set on the first side of the core array, and the output end of each first laser is coupled to the first end of the corresponding carrier waveguide, so as to inject a set of first optical signals generated into the corresponding carrier waveguide. Each of the second lasers in the other set of lasers is disposed on the second side of the core array, and the output end of each of the second lasers is coupled to the second end of the corresponding carrier waveguide, for injecting another set of first optical signals into the corresponding carrier waveguide; wherein, the wavelengths of each of the first optical signals are different.

6. The system according to claim 3, characterized in that, The fiber optic connector includes: a first fiber optic connector and a second fiber optic connector; Each of the first optical fiber connectors is disposed on the third side of the core array and is coupled to the first end of the corresponding signal waveguide; Each of the second fiber optic connectors is disposed on the fourth side of the core array and is coupled to the second end of the corresponding signal waveguide.

7. The system according to claim 5, characterized in that, Each of the optical modulation units is disposed in the active optical waveguide layer; the optical modulation unit includes: a micro-ring resonator, an electro-optic modulator, and a vertical interconnect structure; The microring resonator is connected to the electro-optic modulator and is used to resonate and couple with the target wavelength of the corresponding core particle based on the harmonic wavelength, so as to extract the first optical signal corresponding to the target wavelength from the carrier waveguide corresponding to the core particle. The electro-optic modulator is connected to the corresponding chip via the vertical interconnect structure, and is used to receive the first electrical signal output by the chip, and modulate the first electrical signal onto the first optical signal to obtain a second optical signal carrying the first electrical signal.

8. The system according to claim 7, characterized in that, The optical modulation unit further includes a wavelength thermally tuned electrode disposed on the microring resonator; the wavelength thermally tuned electrode is used to adjust the resonant wavelength of the microring resonator based on the thermo-optic effect.

9. The system according to claim 8, characterized in that, The active optical waveguide layer is further provided with multiple unidirectional coupling structures, each of which is disposed between the corresponding optical modulation unit and its corresponding signal waveguide. The electro-optic modulator injects the second optical signal into the signal waveguide through the unidirectional coupling structure and transmits the second optical signal through the signal waveguide to the corresponding first optical fiber connector or second optical fiber connector.

10. The system according to claim 7, characterized in that, The active optical waveguide layer is further provided with multiple optical detection units; each optical detection unit corresponds one-to-one with a core particle; each optical detection unit includes: the micro-ring resonator, the photoelectric converter, and the vertical interconnect structure; The microring resonator is connected to the photoelectric converter and is used to resonate and couple with the target wavelength of the corresponding core particle based on the harmonic wavelength, so as to extract the second optical signal corresponding to the target wavelength from the signal waveguide corresponding to the core particle. The photoelectric converter is connected to the corresponding chip through the vertical interconnect structure, and is used to convert the second optical signal into a second electrical signal, and transmit the second electrical signal to the target chip through the vertical interconnect structure.

11. The system according to claim 7, characterized in that, The substrate is made of any one of silicon substrate, glass substrate or organic substrate.

12. A wafer-level chip-based optoelectronic co-packaging method, applied to the optoelectronic co-packaging system according to any one of claims 1 to 10, characterized in that, include: Each core in the core array is numbered according to a pre-established Latin matrix; Based on the core number corresponding to each core, a corresponding target wavelength is assigned to each core; wherein, each core number corresponds to a unique target wavelength; The control optical modulation unit extracts the corresponding first optical signal from the carrier waveguide according to the corresponding target wavelength and modulates it to obtain the modulated second optical signal.

13. The method according to claim 12, characterized in that, The step of numbering each core in the core array according to a pre-established Latin matrix includes: Each chip in each row of the chip array is assigned a different chip number according to each row of the Latin matrix; wherein the target wavelengths corresponding to the chips in the same signal waveguide do not overlap. Different chip numbers are assigned to multiple chips in each column of the chip array according to each column of the Latin matrix; wherein the target wavelengths corresponding to the chips in the same carrier waveguide do not overlap.

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