Method and device for evaluating mask pattern symmetry, computer device, readable storage medium and program product

Abstract

The application relates to a mask pattern symmetry evaluation method and device, computer equipment, a computer readable storage medium and a computer program product. The method comprises the following steps: obtaining a corrected pattern, the corrected pattern being obtained by correcting an initial pattern, the initial pattern comprising a target pattern, the target pattern having symmetry, and the corrected pattern comprising a main pattern and a sub-resolution auxiliary pattern; starting from the center of the target pattern, constructing a symmetry reference area based on the corrected pattern, and the main pattern and the sub-resolution auxiliary pattern being framed in the symmetry reference area; flipping or rotating the pattern framed by the symmetry reference area in the corrected pattern symmetrically to form a detection pattern; and comparing the detection pattern with the corrected pattern to determine the symmetry of the corrected pattern. The application can accurately and effectively evaluate the symmetry of the corrected mask pattern.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a method, apparatus, computer device, computer-readable storage medium, and computer program product for evaluating mask layout symmetry. Background Technology

[0002] With advancements in semiconductor manufacturing processes, the requirements for mask symmetry are becoming increasingly stringent. During photolithography, mask symmetry can reduce uneven magnification or reduction caused by optical effects. Simultaneously, ensuring mask symmetry helps control manufacturing tolerances and reduces pattern deviations caused by mask defects. Furthermore, symmetry requirements allow optical systems to better compensate for optical distortions, such as aberrations and uneven illumination. Symmetrical patterns are processed more uniformly by the optical system, reducing imaging errors. Therefore, mask symmetry requirements help maintain pattern consistency during photolithography, avoiding pattern distortion or inhomogeneity caused by asymmetry, thereby improving the quality and performance of semiconductor devices.

[0003] Meanwhile, in the fabrication of photomasks, the first step is usually to create a photomask layout. Then, correction techniques such as Optical Proximity Correction (OPC) are used to correct the layout and rectify distortions in the lithographic pattern. Finally, the photomask is fabricated based on the corrected layout.

[0004] Therefore, evaluating the symmetry of the modified mask layout is crucial in semiconductor manufacturing. Summary of the Invention

[0005] Therefore, it is necessary to provide an evaluation method, apparatus, computer device, computer-readable storage medium, and computer program product that can accurately and effectively evaluate the symmetry of the corrected mask layout in response to the above-mentioned technical problems.

[0006] A method for evaluating the symmetry of a mask layout includes:

[0007] A revised layout is obtained by revising an initial layout, wherein the initial layout includes a target graphic that is symmetrical, and the revised layout includes a main graphic and sub-resolution auxiliary graphics.

[0008] Starting from the center of the target graphic, a symmetrical reference region is constructed based on the corrected layout. The symmetrical reference region contains the main graphic and the sub-resolution auxiliary graphic.

[0009] The graphic in the modified layout that is selected by the symmetrical reference area is symmetrically flipped or rotated to form a detection layout.

[0010] The symmetry of the modified layout is determined by comparing the detected layout with the modified layout.

[0011] In one embodiment, comparing the detected layout with the corrected layout to determine the symmetry of the corrected layout includes:

[0012] Perform a Boolean XOR operation between the graphic in the detection layout and the graphic in the correction layout to obtain the result image;

[0013] Calculate the area of ​​the graphic in the result graph to determine the symmetry of the revised layout.

[0014] In one embodiment, prior to obtaining the revised layout, the method further includes:

[0015] Obtain the initial layout;

[0016] The symmetry of the target graphic in the initial layout is detected.

[0017] In one embodiment, the target graphic has axial symmetry and is symmetric about a first symmetry axis.

[0018] The step of symmetrically flipping or rotating the graphic selected by the symmetrical reference region in the modified layout to form a detection layout includes:

[0019] The graphic in the modified layout that is selected by the symmetrical reference area is flipped along the first axis of symmetry to form the detection layout.

[0020] In one embodiment, the first axis of symmetry is a first direction coordinate axis and / or a second direction coordinate axis with the center of the target graphic as the origin, wherein the first direction is perpendicular to the second direction.

[0021] In one embodiment, the target graphic has axial symmetry and is symmetrical about a second axis of symmetry. The angle between the second axis of symmetry and the first direction coordinate axis is a preset angle, and the first direction coordinate axis has its origin at the center of the target graphic.

[0022] The step of symmetrically flipping or rotating the graphic selected by the symmetrical reference region in the modified layout to form a detection layout includes:

[0023] The graphic in the revised layout that is selected by the symmetrical reference area is rotated by a preset angle along the first clockwise direction so that the second axis of symmetry after rotation coincides with the first direction coordinate axis.

[0024] The rotated graphic selected by the symmetrical reference region is flipped along the first direction coordinate axis;

[0025] The flipped graphic selected by the symmetrical reference area is rotated by a preset angle along the second clockwise direction to form a detection pattern. One of the first clockwise direction and the second clockwise direction is clockwise, and the other is counterclockwise.

[0026] In one embodiment, the target graphic has central symmetry, the modified layout includes at least two columns of the main graphic, and the at least two columns of the main graphic include an alternating first main graphic column and a second main graphic column, wherein adjacent main graphics in the first main graphic column and the second main graphic column share a sub-resolution auxiliary graphic;

[0027] Before constructing a symmetrical reference region based on the corrected layout and originating from the center of the target graphic, the method further includes:

[0028] Based on the first main graphic column and sub-resolution auxiliary graphics of the revised layout, a first extraction map of the revised layout is formed.

[0029] In one embodiment, the initial layout includes a first target graphic column and a second target graphic column, wherein the first target graphic column corresponds to the first main graphic column, and the second target graphic column corresponds to the second main graphic column.

[0030] The first extraction map of the corrected layout is formed based on the first main graphic column and the sub-resolution auxiliary graphics, including:

[0031] Based on the second target graphic column in the initial layout, construct the first auxiliary layout;

[0032] In the revised layout, graphics that interact with graphics in the first auxiliary layout are selected and deleted to form the first extracted image.

[0033] In one embodiment, the symmetric reference region includes a first reference region.

[0034] The construction of a symmetrical reference region based on the corrected layout, starting from the center of the target graphic, includes:

[0035] Based on the first extracted image, the first reference region is constructed.

[0036] In one embodiment, the detection layout includes a first sub-map.

[0037] The step of symmetrically flipping or rotating the graphic selected by the symmetrical reference region in the modified layout to form a detection layout includes:

[0038] The graphic in the first extracted image that is framed by the first reference region is rotated 180 degrees to form the first sub-image.

[0039] In one embodiment, comparing the detected layout with the corrected layout to determine the symmetry of the corrected layout includes:

[0040] The symmetry of the first extracted image is determined by comparing the first sub-image with the first extracted image.

[0041] In one embodiment, before constructing a symmetric reference region based on the modified layout and originating from the center of the target graphic, the method further includes:

[0042] Based on the second main graphic column and sub-resolution auxiliary graphics of the revised layout, a second extraction map of the revised layout is formed;

[0043] The step of constructing a symmetrical reference region based on the corrected layout, starting from the center of the target graphic, further includes:

[0044] The first reference region is moved to the removal region of the second main graphic column to form a second reference region, wherein the offsets of the first reference region in the first direction and the second direction are respectively the periodic dimensions of the target graphic in the initial layout in the first direction and the second direction.

[0045] In one embodiment, the detection layout includes a second sub-image, wherein the graphic selected by the symmetrical reference region in the modified layout is symmetrically flipped or rotated to form the detection layout, including:

[0046] The graphic in the second extracted image that is selected by the second reference area is rotated 180 degrees to form the second sub-image.

[0047] In one embodiment, comparing the detected layout with the corrected layout to determine the symmetry of the corrected layout includes:

[0048] The second subgraph is compared with the second extracted graph to determine the symmetry of the second extracted graph.

[0049] An evaluation device for mask layout symmetry, the device comprising:

[0050] The acquisition module is used to acquire a revised layout, which is obtained by revising an initial layout. The initial layout includes a target graphic, which is symmetrical. The revised layout includes a main graphic and a sub-resolution auxiliary graphic.

[0051] The region construction module is used to construct a symmetrical reference region starting from the center of the target graphic and based on the modified layout. The symmetrical reference region includes the main graphic and the sub-resolution auxiliary graphic.

[0052] The symmetry detection module is used to symmetrically flip or rotate the graphics in the modified layout that are selected by the symmetry reference area to form a detection layout.

[0053] An evaluation module is used to compare the detected pattern with the corrected pattern to determine the symmetry of the corrected pattern.

[0054] A computer device includes a memory and a processor, the memory storing a computer program, the processor executing the computer program to implement the steps of the method described above.

[0055] A computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the method described above.

[0056] A computer program product includes a computer program that, when executed by a processor, implements the steps of the method described above.

[0057] The aforementioned method, apparatus, computer device, computer-readable storage medium, and computer program product for evaluating the symmetry of mask layouts, when the target graphic in the initial layout possesses symmetry, construct a symmetry reference region based on a modified layout, starting from the center of the target graphic. This symmetry reference region can then serve as the smallest symmetry detection unit. Next, the graphic selected by the symmetry reference region in the modified layout is symmetrically flipped or rotated to form a detection layout, and the detection layout is compared with the modified layout. Therefore, based on the comparison results between the detection layout and the modified layout, effective symmetry detection can be performed on each smallest symmetry detection unit.

[0058] This application establishes a symmetry evaluation method for modified mask layouts based on the inherent symmetry of the target graphic. Starting from the smallest symmetry detection unit, a detection layout for symmetry evaluation is constructed, thereby accurately and effectively detecting the symmetry of the modified mask layout. Furthermore, during the generation of the detection layout, a symmetry reference region is constructed. This not only determines the smallest detection unit but also facilitates rapid geometric operations such as flipping or rotating based on the center of the symmetry reference region, effectively improving detection efficiency. Attached Figure Description

[0059] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments of this application or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0060] Figure 1 This is a flowchart illustrating a method for evaluating the symmetry of a mask layout in one embodiment.

[0061] Figure 2a This is a schematic diagram of the initial layout in one embodiment;

[0062] Figure 2b for Figure 2a A schematic diagram showing the symmetry of the target graphic in the initial layout;

[0063] Figure 3 This is a schematic diagram of the initial layout in another embodiment;

[0064] Figure 4a This is a schematic diagram of the initial layout in yet another embodiment;

[0065] Figure 4b for Figure 4a A schematic diagram showing the symmetry of the target graphic in the initial layout;

[0066] Figure 5a This is a schematic diagram of the initial layout in another embodiment;

[0067] Figure 5b To Figure 5a A schematic diagram of the revised layout after the initial layout was corrected;

[0068] Figure 5c For Figure 5a A schematic diagram of a symmetrical reference region constructed starting from the center of the target graphic;

[0069] Figure 6a , Figure 6b They are respectively for Figure 5c A comparative diagram of the detection layout and the correction layout obtained by flipping the graphic in the symmetrical reference region along the y-axis and x-axis respectively;

[0070] Figures 7a to 7c To Figure 5c A schematic diagram of the process of flipping the graphic in the symmetrical reference region along the second axis of symmetry;

[0071] Figure 8 This is a partial schematic diagram of a modified layout in one embodiment;

[0072] Figure 9for Figure 8 A partial schematic diagram of the initial layout of the revised layout;

[0073] Figure 10 Based on Figure 9 The second target graphic column in the initial layout, and a partial schematic diagram of the first auxiliary layout constructed;

[0074] Figure 11 as well as Figure 12 A schematic diagram illustrating the formation process of the first extracted image for the revised layout;

[0075] Figure 13 A schematic diagram of constructing a first reference region based on the first extracted image;

[0076] Figure 14 A partial schematic diagram of the first sub-image formed by rotating the graphic selected by the first reference region in the first extracted image by 180 degrees;

[0077] Figure 15 This is a schematic diagram of moving the first reference region to form the second reference region;

[0078] Figure 16 This is a schematic diagram showing the shape in the second extracted image being selected by the second reference region.

[0079] Figure 17 Based on Figure 16 A partial schematic diagram of the second subgraph formed on the basis of this.

[0080] Figure 18 This is a structural block diagram of a mask layout symmetry evaluation device in one embodiment. Detailed Implementation

[0081] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0082] In one embodiment, see Figure 1 A method for evaluating the symmetry of a mask layout is provided, including:

[0083] Step S200: Obtain the corrected layout. The corrected layout is obtained by correcting the initial layout. The initial layout includes the target graphic, which has symmetry. The corrected layout includes the main graphic and the sub-resolution auxiliary graphic.

[0084] Step S400: Starting from the center of the target graphic, construct a symmetrical reference region based on the corrected layout. The symmetrical reference region contains the main graphic and the sub-resolution auxiliary graphic.

[0085] Step S500: The graphic selected by the symmetrical reference area in the modified layout is symmetrically flipped or rotated to form a detection layout.

[0086] Step S600: Compare the detected layout with the corrected layout to determine the symmetry of the corrected layout.

[0087] In step S200, the initial layout is the mask layout of the initial design. The target pattern in the initial layout is the ideal pattern that is expected to be formed on the etched wafer after photolithography.

[0088] The target graphic possesses symmetry. The target graphic may possess at least one type of symmetry. For example, the target graphic may possess axial symmetry and / or rotational symmetry. When the target graphic possesses axial symmetry, it may be symmetrical about one or more axes of symmetry. When the target graphic possesses rotational symmetry, it may have one or more rotational angles.

[0089] For example, please refer to Figure 2a The initial layout is a periodically arranged array of square holes. The target pattern is square hole pattern G1. Figure 2b As shown Figure 2a The target figure in the figure has four types of geometric symmetry. The four types of geometric symmetry are: (a) symmetry about the 45-degree axis in the figure, (b) symmetry about the 135-degree axis in the figure, (c) symmetry about the x-axis in the figure, and (d) symmetry about the y-axis in the figure.

[0090] As another example, please refer to Figure 3 The initial layout is a periodically arranged array of diamonds. The target pattern is pattern G2. This target pattern satisfies... Figure 2b The four types of symmetry shown.

[0091] As yet another example, please refer to Figure 4a The initial layout is a periodically arranged staggered array. The target graphic is graphic G3. The target graphic has a certain offset in both the x and y directions. The target graphic has... Figure 4b The diagram shows a 180-degree rotational symmetry with its own center as the origin.

[0092] The revised layout is the corrected mask layout. The revised layout includes the main graphic and the sub-resolution auxiliary graphic.

[0093] After the initial layout is formed, it can be modified using techniques such as OPC correction to create a modified layout. The modified layout shares the same coordinate system as the initial layout. For example, the initial layout may reside on one layer, while the modified layout may be formed on a different layer than the initial layout.

[0094] After the mask is formed based on the corrected pattern, sub-resolution auxiliary patterns will not form during exposure based on the mask. Furthermore, since the pattern in the corrected pattern is formed after pre-compensating for distortions caused by optical effects, the pattern ultimately formed on the etched wafer after exposure based on the mask will closely resemble the target pattern due to optical effects during the actual photolithography process.

[0095] In step S400, since the revised layout and the initial layout have the same coordinate system, the center coordinates of the target graphic can be applied to the revised layout. Therefore, a symmetrical reference region can be constructed based on the revised layout, starting from the center of the target graphic. The center coordinates of the symmetrical reference region are the same as the center coordinates of the target graphic. For example, the symmetrical reference region can be a rectangular region. In this case, the symmetrical reference region can be determined based on the coordinates of each vertex of the rectangle. Of course, the symmetrical reference region is not limited to a rectangular region; for example, it can also be a circular region. In this case, the symmetrical reference region can be determined by the center coordinates and radius of the circle.

[0096] The symmetrical reference region contains a main graphic formed based on its corresponding target graphic, and at least one sub-resolution auxiliary graphic near the main graphic is also selected in the symmetrical reference region.

[0097] For example, please refer to Figure 5a The initial layout is a periodically arranged array of vias. The target pattern is via pattern G4. Figure 5b To Figure 5a The revised version of the initial map. Figure 5c The diagram shows a symmetrical reference region A1 constructed from the center of the target graphic. Region A1 includes the main graphic M of the corresponding target graphic in the modified layout and the sub-resolution auxiliary graphic S near the main graphic M.

[0098] It is important to note that the sub-resolution auxiliary graphic selected within the symmetric reference region can be entirely located within the symmetric reference region or it can overlap with the symmetric reference region. That is, the symmetric reference region can encompass the entire structure of the sub-resolution auxiliary graphic or it can encompass a local structure of the sub-resolution auxiliary graphic; there is no restriction on this.

[0099] In step S500, the target graphic can be symmetrically flipped or rotated based on its symmetry.

[0100] When the target graphic has axial symmetry, the graphic selected by the symmetric reference area in the modified layout (including the main graphic and sub-resolution graphic) can be flipped. When the target graphic has rotational symmetry, the graphic selected by the symmetric reference area in the modified layout (including the main graphic and sub-resolution graphic) can be rotated.

[0101] Simultaneously, when flipping or rotating the graphics (including the main graphic and sub-resolution graphics) selected by the symmetrical reference region in the corrected layout, the main graphic and sub-resolution graphics can be flipped or rotated as a whole. Furthermore, it can be understood that sub-resolution auxiliary graphics selected within the symmetrical reference region, whether completely within the symmetrical reference region or overlapping with it, will be symmetrically flipped or rotated as a whole with the main graphic.

[0102] In step S600, the symmetry of the corrected layout can be determined based on the comparison results between the detected layout and the corrected layout.

[0103] When the target graphic has multiple symmetries, a detection pattern can be formed based on each of the symmetries. The quality of the symmetry of the corrected pattern is then determined by comparing all the detection patterns with the corrected pattern. For example... Figure 6a , Figure 6b They are respectively for Figure 5c A comparative diagram of the detection layout and the correction layout obtained by flipping the graphic in the symmetrical reference region A1 along the y-axis and x-axis respectively. Figure 7c To be Figure 5c A schematic diagram comparing the detection layout and the correction layout obtained by rotating the graphic in the symmetrical reference region A1 by 180 degrees.

[0104] In this embodiment, when the target graphic in the initial layout is symmetrical, a symmetrical reference region is constructed starting from the center of the target graphic and based on the revised layout. This symmetrical reference region can then serve as the smallest symmetry detection unit. Next, the graphic selected by the symmetrical reference region in the revised layout is symmetrically flipped or rotated to form a detection layout, and the detection layout is compared with the revised layout. Therefore, based on the comparison results between the detection layout and the revised layout, effective symmetry detection can be performed on each smallest symmetry detection unit.

[0105] In this embodiment, a symmetry evaluation method for the corrected mask layout is established based on the inherent symmetry of the target graphic. Starting from the smallest symmetry detection unit, a detection layout for symmetry evaluation is constructed, thereby accurately and effectively detecting the symmetry of the corrected mask layout. Furthermore, during the generation of the detection layout, a symmetry reference region is constructed. This not only determines the smallest detection unit but also facilitates rapid geometric operations such as flipping or rotating based on the center of the symmetry reference region, thus effectively improving detection efficiency.

[0106] In one embodiment, step S600 includes:

[0107] Step S61: Perform a Boolean XOR operation between the graphic in the detection layout and the graphic in the correction layout to obtain the result image.

[0108] Step S62: Calculate the area of ​​the graphic in the result graph to determine the symmetry of the revised layout.

[0109] In step S61, a Boolean XOR operation is performed.

[0110] The graphics in the detection layout are obtained by flipping or rotating the graphics in the correction layout, thus there is a one-to-one correspondence between the graphics in the detection layout and the graphics in the correction layout. Performing a Boolean XOR operation on the corresponding graphics in the detection layout and the correction layout yields the graphics in the result image, forming the result image. For example, if the correction layout includes graphic A and the detection layout includes graphic B corresponding to graphic A, then performing a Boolean XOR operation on the graphics in the detection layout and the correction layout can include performing a Boolean XOR operation on graphics A and graphics B to obtain graphic C in the result image.

[0111] In step S62, the area of ​​each graphic in the result graph can be calculated to determine the symmetry of the corrected layout. The larger the area of ​​each graphic in the result graph, the worse the symmetry of the corrected layout.

[0112] In this embodiment, by performing a Boolean XOR operation on the detected layout and the corrected layout, the degree of asymmetry of the corrected mask layout (corrected layout) can be quantitatively represented.

[0113] In one embodiment, prior to step S200, the method further includes:

[0114] Step S111: Obtain the initial layout;

[0115] Step S112: Detect the symmetry of the target graphic in the initial layout.

[0116] Specifically, the symmetry of the target graphic can be detected using a software script. Then, if the target graphic is symmetrical, subsequent steps S200 to S600 are performed. If the target graphic is not symmetrical, the symmetry evaluation can be terminated.

[0117] In this embodiment, the symmetry of the target graphic can be automatically detected, thereby improving detection efficiency and accuracy.

[0118] Of course, in other embodiments, the symmetry of the mask pattern can be evaluated by manually determining the symmetry of the target pattern and then performing steps S200 to S600.

[0119] In one embodiment, the target graphic has axial symmetry and is symmetric about a first symmetry axis.

[0120] Step S500 includes:

[0121] Step S511: Flip the graphic selected by the symmetrical reference area in the modified layout along the first axis of symmetry to form the detection layout.

[0122] For example, the first axis of symmetry is a first direction coordinate axis with the center of the target graphic as the origin, that is, the target graphic is symmetrical about the first direction coordinate axis. At this time, the graphic selected by the symmetrical reference area in the modified layout can be flipped along the first direction coordinate axis to form the detection layout.

[0123] For example, the second axis of symmetry is a second-direction coordinate axis with the center of the target graphic as its origin, meaning the target graphic is symmetrical about the second-direction coordinate axis. One of the second-direction coordinate axis and the first-direction coordinate axis can be the x-axis, and the other can be the y-axis. The second direction is perpendicular to the first direction. In this case, the graphic selected by the symmetrical reference area in the modified layout can be flipped along the second-direction coordinate axis to form the detection layout.

[0124] For example, please refer to Figure 6a and Figure 6b The target graphic is symmetrical about both the first and second coordinate axes. Therefore, we can either flip the graphic selected by the symmetrical reference area in the modified layout along the first coordinate axis to form a detection layout, or flip the graphic selected by the symmetrical reference area in the modified layout along the second coordinate axis to form another detection layout.

[0125] When the first axis of symmetry is a first-direction coordinate axis and / or a second-direction coordinate axis with the center of the target graphic as the origin, it facilitates the software's flipping process. The form of the first axis of symmetry is not limited to this and can be set according to actual needs.

[0126] In one embodiment, the target graphic has axial symmetry and is symmetrical about a second axis of symmetry. The angle between the second axis of symmetry and the first directional coordinate axis is a preset angle. The first directional coordinate axis has its origin at the center of the target graphic. The first directional coordinate axis can be either the x-axis or the y-axis.

[0127] The preset angle can be set according to actual needs. For example, the preset angle can be 45 degrees or 135 degrees.

[0128] Step S500 includes:

[0129] Step S521: Rotate the graphic selected by the symmetrical reference area in the revised layout by a preset angle along the first clockwise direction so that the second axis of symmetry after rotation coincides with the first direction coordinate axis.

[0130] Step S522: The rotated graphic selected by the symmetrical reference area is flipped along the first direction coordinate axis;

[0131] In step S523, the flipped graphic selected by the symmetrical reference area is rotated by a preset angle along the second clockwise direction to form a detection pattern.

[0132] Among them, one of the first clockwise direction and the second clockwise direction is clockwise, and the other is counterclockwise.

[0133] Please see Figures 7a to 7c The following explanation uses the first direction coordinate axis as the x-axis, with a preset angle of 45 degrees (i.e., the angle between the second axis of symmetry and the first direction coordinate axis is 45 degrees), and the first clockwise direction as the clockwise direction.

[0134] Please see Figure 7a In step S521, the graphic selected by the symmetry reference region in the revised layout is rotated 45 degrees clockwise so that the second axis of symmetry after rotation coincides with the x-axis. The rotated graphic is then symmetric about the x-axis. Please refer to [link to relevant documentation]. Figure 7b In step S522, the rotated, x-axis-symmetric figure can be flipped along the x-axis. Then, please refer to... Figure 7c In step S523, the graphic that has been flipped along the x-axis is rotated 45 degrees counterclockwise to form a detection pattern.

[0135] In this embodiment, by first rotating at a preset angle along the first clockwise direction, then flipping, and then first rotating back at a preset angle along the second clockwise direction, the flipping operation can be shifted to a flipping operation along the first direction coordinate axis, thus facilitating the flipping process.

[0136] In one embodiment, see Figure 8 The target graphic has central symmetry, meaning it has rotational symmetry with a rotation angle of 180 degrees.

[0137] The revised layout includes at least two columns of main graphics. Exemplarily, the at least two columns of main graphics can be arranged along a first direction, and each column of main graphics can include multiple main graphics arranged in a third direction. Within the same column of main graphics, adjacent main graphics can be offset along the first direction. Adjacent columns of main graphics can be offset along a second direction. The second direction is perpendicular to the first direction. The third direction intersects the first direction and also intersects the second direction.

[0138] Simultaneously, at least two columns of main graphics comprise alternating columns of first and second main graphics. Adjacent main graphics in the first and second main graphics columns share sub-resolution auxiliary graphics. For example, located in... Figure 8 The sub-resolution auxiliary graphics within the overlapping area of ​​the dashed and solid boxes are the shared sub-resolution auxiliary graphics between adjacent main graphics in the first and second main graphic columns.

[0139] Before step S400, please refer to Figure 12 It also includes:

[0140] Step S310: Based on the first main graphic column of the corrected layout and the sub-resolution auxiliary graphics, form the first extraction map of the corrected layout.

[0141] In one embodiment, see Figure 9 The initial layout includes a first target graphic column and a second target graphic column. The first target graphic column corresponds to the first main graphic column, and the second target graphic column corresponds to the second main graphic column.

[0142] At this time, step S310 may include:

[0143] Step S311, please refer to Figure 10 Based on the second target graphic column in the initial layout, a first auxiliary layout is constructed;

[0144] For step S312, please refer to... Figure 11 In the revised layout, select and delete the graphics that interact with the graphics in the first auxiliary layout to form the first extraction map (see [link]). Figure 12 ).

[0145] In step S311, the first auxiliary layout only contains the second target graphic column of the initial layout, but not the second target graphic column of the initial layout. Therefore, the graphic period of the first auxiliary layout in the first direction can be increased by 2 times relative to the graphic period of the initial layout in the first direction.

[0146] In step S312, the graphics in the first auxiliary layout are the same as the graphics in the second target graphic column of the initial layout. The second target graphic column corresponds to the second main graphic column of the revised layout. Therefore, the graphics in the revised layout that interact with the graphics in the first auxiliary layout are the graphics in the second main graphic column.

[0147] Based on this, by selecting and deleting the graphics that interact with the graphics in the first auxiliary map in the revised map, a first extraction map can be easily and effectively formed, including the first main graphic column and the sub-resolution auxiliary graphics, but excluding the second main graphic column.

[0148] Of course, in other embodiments, the first extraction map can also be formed in other ways, and there is no limitation on this.

[0149] In one embodiment, step S310 is included before step S400, and the symmetrical reference region includes a first reference region.

[0150] Step S400 includes:

[0151] For step S410, please refer to... Figure 13 Based on the first extracted image, a first reference region A11 is constructed.

[0152] After the first extraction image is formed, adjacent columns of main graphics in the first extraction image no longer share sub-resolution auxiliary graphics; the sub-resolution auxiliary graphics of each column of main graphics are independent of each other. Based on this, multiple independent first reference regions can be constructed based on the first extraction image. Each first reference region may not simultaneously select the same sub-resolution auxiliary graphics, thus ensuring the accuracy of symmetry detection and evaluation in subsequent steps. This effectively prevents adjacent symmetry reference regions from simultaneously selecting the same sub-resolution auxiliary graphics, thereby preventing unpredictable errors when rotating the graphics selected by each symmetry reference region.

[0153] In one embodiment, the detection map includes a first sub-map.

[0154] Step S500 includes:

[0155] For step S531, please refer to... Figure 14 The graphic selected by the first reference region in the first extracted image is rotated 180 degrees to form the first sub-image.

[0156] Based on this, exemplarily, step S600 includes:

[0157] Step S610: Compare the first sub-image with the first extracted image to determine the symmetry of the first extracted image.

[0158] Specifically, a Boolean XOR operation can be performed between the graphic in the first sub-image and its corresponding graphic in the first extracted image to form the first result image. The area of ​​the graphic in the first result image is then calculated to determine the symmetry of the first extracted image. A larger area indicates poorer symmetry in the first extracted image.

[0159] In one embodiment, step S400 includes step S410. Furthermore, prior to step S400, the following steps are also included:

[0160] Step S320: Based on the second main graphic column of the corrected layout and the sub-resolution auxiliary graphics, a second extraction map of the corrected layout is formed.

[0161] For example, step S320 may include:

[0162] Step S321: Based on the first target graphic column in the initial layout, construct a second auxiliary layout;

[0163] Step S322: Select and delete the graphics in the revised layout that interact with the graphics in the second auxiliary layout to form the second extraction map.

[0164] The second extraction image can be formed in a similar way to the first extraction image, and will not be elaborated further here.

[0165] In addition, step S400 also includes:

[0166] For step S420, please refer to... Figure 15 The first reference region A11 is moved to the removal area of ​​the second main graphic column to form the second reference region A12, wherein the offset of the first reference region in the first direction and the second direction are respectively the periodic size of the target graphic in the initial layout in the first direction and the second direction.

[0167] It is understandable that when there are multiple first reference regions A11, the multiple first reference regions A11 can all be moved, thereby forming multiple second reference regions A12.

[0168] The second reference area can be used to evaluate the symmetry of the second main graphic column in the revised layout.

[0169] In this embodiment, a second reference region can be generated quickly and effectively by translating the already constructed first reference region.

[0170] Of course, in other embodiments, the formation of the second reference region is not limited to this. For example, the second reference region can also be constructed based on the second extraction map after the second extraction map is formed in step S320.

[0171] In one embodiment, the detection layout includes a second subgraph.

[0172] Step S500 includes:

[0173] For step S532, please refer to... Figure 16 as well as Figure 17 The graphic selected by the second reference area in the second extracted image is rotated 180 degrees to form the second sub-image.

[0174] Based on this, exemplarily, step S600 includes:

[0175] Step S620: Compare the second subgraph with the second extracted graph to determine the symmetry of the second extracted graph.

[0176] Specifically, a Boolean XOR operation can be performed between the graphic in the second sub-image and its corresponding graphic in the second extracted image to form a second result image. The area of ​​the graphic in the second result image is then calculated to determine the symmetry of the second extracted image. A larger area in the second result image indicates poorer symmetry in the second extracted image.

[0177] It should be understood that although the steps in the flowcharts of the above embodiments are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the above embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0178] Based on the same inventive concept, this application also provides a mask layout symmetry evaluation device for implementing the mask layout symmetry evaluation method described above. The solution provided by this device is similar to the implementation described in the above method; therefore, the specific limitations of one or more mask layout symmetry evaluation device embodiments provided below can be found in the limitations of the mask layout symmetry evaluation method described above, and will not be repeated here.

[0179] In one embodiment, see Figure 18 A device for evaluating the symmetry of a mask layout is provided, comprising: an acquisition module 100, a region construction module 200, a symmetry detection module 300, and an evaluation module 400, wherein:

[0180] The acquisition module 100 is used to acquire the revised layout, which is obtained by correcting the initial layout. The initial layout includes the target graphic, which is symmetrical. The revised layout includes the main graphic and the sub-resolution auxiliary graphic.

[0181] The region construction module 200 is used to construct a symmetrical reference region starting from the center of the target graphic and based on the modified layout. The symmetrical reference region contains the main graphic and the sub-resolution auxiliary graphic.

[0182] The symmetry detection module 300 is used to symmetrically flip or rotate the graphic selected by the symmetrical reference area in the modified layout to form a detection layout.

[0183] The evaluation module 400 is used to compare the detected layout with the corrected layout to determine the symmetry of the corrected layout.

[0184] In one embodiment, the evaluation module 400 includes a Boolean XOR operation for performing a graphic in the detection layout and a graphic in the correction layout to obtain a result image, and calculating the area of ​​the graphic in the result image to determine the symmetry of the correction layout.

[0185] In one embodiment, the mask layout symmetry evaluation apparatus further includes a symmetry detection module. The symmetry detection module is used to acquire an initial layout and detect the symmetry of the target graphic within the initial layout.

[0186] In one embodiment, the target graphic has axial symmetry and is symmetrical about a first symmetry axis. The symmetry detection module 300 is used to flip the graphic selected by the symmetry reference region in the modified layout along the first symmetry axis to form a detection layout.

[0187] In one embodiment, the first axis of symmetry is a first direction coordinate axis and / or a second direction coordinate axis with the center of the target graphic as the origin, and the first direction is perpendicular to the second direction.

[0188] In one embodiment, the target graphic has axial symmetry and is symmetrical about a second axis of symmetry. The angle between the second axis of symmetry and the first directional coordinate axis is a preset angle, and the first directional coordinate axis takes the center of the target graphic as its origin.

[0189] The symmetry detection module 300 is used to rotate the graphic selected by the symmetry reference region in the correction layout by a preset angle along a first clockwise direction, so that the rotated second axis of symmetry coincides with the first direction coordinate axis; to flip the rotated graphic selected by the symmetry reference region along the first direction coordinate axis; and to rotate the flipped graphic selected by the symmetry reference region by a preset angle along a second clockwise direction, thereby forming a detection layout. One of the first clockwise direction and the second clockwise direction is clockwise, and the other is counterclockwise.

[0190] In one embodiment, the target graphic has central symmetry, the modified layout includes at least two columns of main graphics, and the at least two columns of main graphics include alternating columns of first main graphics and second main graphics, with adjacent main graphics in the first main graphics column and the second main graphics column sharing a sub-resolution auxiliary graphic.

[0191] The mask layout symmetry evaluation device also includes a first extraction module. The first extraction module is used to form a first extracted image of the corrected layout based on a first main graphic column and sub-resolution auxiliary graphics.

[0192] In one embodiment, the initial layout includes a first target graphic column and a second target graphic column, the first target graphic column corresponding to a first main graphic column, and the second target graphic column corresponding to a second main graphic column.

[0193] The first extraction module is used to construct a first auxiliary layout based on the second target graphic column in the initial layout; and to select and delete graphics in the revised layout that interact with graphics in the first auxiliary layout to form the first extraction map.

[0194] In one embodiment, the symmetric reference region includes a first reference region. The region construction module 200 is used to construct the first reference region based on the first extracted map.

[0195] In one embodiment, the detection layout includes a first sub-image. The symmetry detection module 300 is used to rotate the graphic selected by the first reference region in the first extracted image by 180 degrees to form the first sub-image.

[0196] In one embodiment, the evaluation module 400 is used to compare the first subgraph with the first extracted graph to determine the symmetry of the first extracted graph.

[0197] In one embodiment, the mask layout symmetry evaluation device further includes a second extraction module. The second extraction module is used to form a second extracted image of the corrected layout based on a second main graphic column of the corrected layout and sub-resolution auxiliary graphics.

[0198] The region construction module 200 is used to move the first reference region to the removal region of the second main graphic column to form the second reference region, wherein the offset of the first reference region in the first direction and the second direction are respectively the periodic size of the target graphic in the initial layout in the first direction and the second direction.

[0199] In one embodiment, the symmetry detection module 300 is used to rotate the graphic selected by the second reference region in the second extracted image by 180 degrees to form a second sub-image.

[0200] In one embodiment, the evaluation module 400 is used to compare the second subgraph with the second extracted graph to determine the symmetry of the second extracted graph.

[0201] Each module in the aforementioned mask layout symmetry evaluation device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device, or stored in the memory of a computer device as software, so that the processor can call and execute the operations corresponding to each module.

[0202] In one embodiment, a computer device is also provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps in the above method embodiments.

[0203] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon that, when executed by a processor, implements the steps in the above method embodiments.

[0204] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, implements the steps in the above method embodiments.

[0205] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, artificial intelligence (AI) processors, etc., and are not limited to these.

[0206] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0207] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for evaluating the symmetry of a mask layout, characterized in that, include: A revised layout is obtained by revising an initial layout, wherein the initial layout includes a target graphic that is symmetrical, and the revised layout includes a main graphic and sub-resolution auxiliary graphics. Starting from the center of the target graphic, a symmetrical reference region is constructed based on the corrected layout. The symmetrical reference region contains the main graphic and the sub-resolution auxiliary graphic. The graphic in the modified layout that is selected by the symmetrical reference area is symmetrically flipped or rotated to form a detection layout. The symmetry of the modified layout is determined by comparing the detected layout with the modified layout.

2. The method for evaluating the symmetry of a mask layout according to claim 1, characterized in that, Comparing the detected layout with the corrected layout to determine the symmetry of the corrected layout includes: Perform a Boolean XOR operation between the graphic in the detection layout and the graphic in the correction layout to obtain the result image; Calculate the area of ​​the graphic in the result graph to determine the symmetry of the revised layout.

3. The method for evaluating the symmetry of a mask layout according to claim 1, characterized in that, Before obtaining the corrected layout, the process also includes: Obtain the initial layout; The symmetry of the target graphic in the initial layout is detected.

4. The method for evaluating the symmetry of a mask layout according to claim 1, characterized in that, The target graphic has axial symmetry, and is symmetric about a first symmetry axis. The step of symmetrically flipping or rotating the graphic selected by the symmetrical reference region in the modified layout to form a detection layout includes: The graphic in the modified layout that is selected by the symmetrical reference area is flipped along the first axis of symmetry to form the detection layout.

5. The method for evaluating the symmetry of a mask layout according to claim 4, characterized in that, The first axis of symmetry is a first direction coordinate axis and / or a second direction coordinate axis with the center of the target graphic as the origin, and the first direction is perpendicular to the second direction.

6. The method for evaluating the symmetry of a mask layout according to claim 1, characterized in that, The target graphic is axially symmetric, and symmetric about a second axis of symmetry. The angle between the second axis of symmetry and the first direction coordinate axis is a preset angle, and the first direction coordinate axis has its origin at the center of the target graphic. The step of symmetrically flipping or rotating the graphic selected by the symmetrical reference region in the modified layout to form a detection layout includes: The graphic in the revised layout that is selected by the symmetrical reference area is rotated by a preset angle along the first clockwise direction so that the second axis of symmetry after rotation coincides with the first direction coordinate axis. The rotated graphic selected by the symmetrical reference region is flipped along the first direction coordinate axis; The flipped graphic selected by the symmetrical reference area is rotated by a preset angle along the second clockwise direction to form a detection pattern. One of the first clockwise direction and the second clockwise direction is clockwise, and the other is counterclockwise.

7. The method for evaluating the symmetry of a mask layout according to claim 1, characterized in that, The target graphic has central symmetry, and the revised layout includes at least two columns of the main graphic, and the at least two columns of the main graphic include an alternating first main graphic column and a second main graphic column, wherein adjacent main graphics in the first main graphic column and the second main graphic column share a sub-resolution auxiliary graphic; Before constructing a symmetrical reference region based on the corrected layout and originating from the center of the target graphic, the method further includes: Based on the first main graphic column and sub-resolution auxiliary graphics of the revised layout, a first extraction map of the revised layout is formed.

8. The method for evaluating the symmetry of a mask layout according to claim 7, characterized in that, The initial layout includes a first target graphic column and a second target graphic column, wherein the first target graphic column corresponds to the first main graphic column, and the second target graphic column corresponds to the second main graphic column. The first extraction map of the corrected layout is formed based on the first main graphic column and the sub-resolution auxiliary graphics, including: Based on the second target graphic column in the initial layout, construct the first auxiliary layout; In the revised layout, graphics that interact with graphics in the first auxiliary layout are selected and deleted to form the first extracted image.

9. The method for evaluating the symmetry of a mask layout according to claim 7, characterized in that, The symmetrical reference region includes a first reference region. The construction of a symmetrical reference region based on the corrected layout, starting from the center of the target graphic, includes: Based on the first extracted image, the first reference region is constructed.

10. The method for evaluating the symmetry of a mask layout according to claim 9, characterized in that, The detection map includes a first sub-map. The step of symmetrically flipping or rotating the graphic selected by the symmetrical reference region in the modified layout to form a detection layout includes: The graphic in the first extracted image that is framed by the first reference region is rotated 180 degrees to form the first sub-image.

11. The method for evaluating the symmetry of a mask layout according to claim 10, characterized in that, The step of comparing the detected layout with the corrected layout to determine the symmetry of the corrected layout includes: The symmetry of the first extracted image is determined by comparing the first sub-image with the first extracted image.

12. The method for evaluating the symmetry of a mask layout according to claim 9, characterized in that, Before constructing a symmetrical reference region based on the corrected layout and originating from the center of the target graphic, the method further includes: Based on the second main graphic column and sub-resolution auxiliary graphics of the revised layout, a second extraction map of the revised layout is formed; The step of constructing a symmetrical reference region based on the corrected layout, starting from the center of the target graphic, further includes: The first reference region is moved to the removal region of the second main graphic column to form a second reference region, wherein the offset of the first reference region in the first direction and the second direction are respectively the periodic size of the target graphic in the initial layout in the first direction and the second direction.

13. The method for evaluating the symmetry of a mask layout according to claim 12, characterized in that, The detection layout includes a second sub-image, which involves symmetrically flipping or rotating the graphic selected by the symmetrical reference region in the modified layout to form the detection layout, including: The graphic in the second extracted image that is selected by the second reference area is rotated 180 degrees to form the second sub-image.

14. The method for evaluating the symmetry of a mask layout according to claim 13, characterized in that, The step of comparing the detected layout with the corrected layout to determine the symmetry of the corrected layout includes: The second subgraph is compared with the second extracted graph to determine the symmetry of the second extracted graph.

15. A device for evaluating the symmetry of a mask layout, characterized in that, The device includes: The acquisition module is used to acquire a revised layout, which is obtained by revising an initial layout. The initial layout includes a target graphic, which is symmetrical. The revised layout includes a main graphic and a sub-resolution auxiliary graphic. The region construction module is used to construct a symmetrical reference region starting from the center of the target graphic and based on the modified layout. The symmetrical reference region includes the main graphic and the sub-resolution auxiliary graphic. The symmetry detection module is used to symmetrically flip or rotate the graphics in the modified layout that are selected by the symmetry reference area to form a detection layout. An evaluation module is used to compare the detected pattern with the corrected pattern to determine the symmetry of the corrected pattern.

16. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 14.

17. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 14.

18. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 14.

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