A photoresist composition and a method of forming a photoresist pattern therefrom

Abstract

Embodiments of the present application provide a photoresist composition, comprising the following components: an acrylic resin with branched chain ends comprising hydroxyl groups or carboxyl groups; a photosensitizer for adjusting the alkali solubility of the resin; a surfactant; an organic solvent; wherein the branched chain ends of the acrylic resin further comprise epoxy groups; the photoresist composition further comprises an acidic photosensitive component, a crosslinking agent, and a dissolution promoter for filling between the molecular chains of the acrylic resin during crosslinking; the dissolution promoter is an aromatic compound containing 2-8 phenolic hydroxyl functional groups, and the molecular weight of the aromatic compound is less than 800. The photoresist composition provided by the embodiments of the present application can be used at least in the manufacturing process of display panels, so that the photoresist layer has high flatness and light transparency.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically, to photoresist compositions and methods for forming photoresist patterns using photoresist compositions. Background Technology

[0002] With the continuous development and refinement of display panel manufacturing processes, the requirements for insulation and planarization are becoming increasingly stringent. Existing traditional organic insulating photoresists are gradually failing to meet these requirements. This type of photoresist, while completing photolithographic patterning, solves the problems of surface steps, unevenness, and gaps caused by multi-layer wiring and metal electrodes in panel manufacturing, forming a smoother, more uniform surface. This reduces the manufacturing difficulty of subsequent processes and improves yield. These photoresists are mostly permanent functional photoresists, and after curing, they often exist as interlayer insulating layers or dielectric layers for a long period, making them a core material in display panel manufacturing.

[0003] However, the flatness of currently available acrylic or polyimide organic insulating photoresists can only reach about 80%. In order to achieve a higher flatness, the formulation usually uses a large amount of fluorine-containing substances, which poses potential risks to the environment and human health. Summary of the Invention

[0004] To address the aforementioned problems in the prior art, embodiments of this application propose a photoresist composition that can be used in display panel manufacturing processes to achieve high flatness and transparency in the photoresist layer. Furthermore, the photoresist composition of this application is fluorine-free, thus avoiding potential environmental and health risks associated with fluorine.

[0005] According to one aspect of this application, a photoresist composition is provided, comprising the following components: an acrylic resin with hydroxyl or carboxyl groups at the branch ends; a photosensitizer for adjusting the alkali solubility of the resin; a surfactant; and an organic solvent; wherein the acrylic resin further comprises epoxy groups at the branch ends; the photoresist composition further comprises an acidic photosensitizing component, a crosslinking agent, and a dissolution promoter filling the spaces between the acrylic resin molecular chains during crosslinking; the dissolution promoter is an aromatic compound containing 2 to 8 phenolic hydroxyl functional groups, the molecular weight of the aromatic compound being less than 800; the photosensitizer is selected from diazonium quinone photosensitizers. The photosensitizer comprises one or more of the following chemical formulas: diazonium quinone photosensitizer, wherein R1'-R17' is hydrogen or one of the following chemical formulas: formula 11, with hydrogen accounting for 20%-80% of the total and formula 11 accounting for 20%-80% of the total; and acidic photosensitizers include one or more of the following: diazonium quinone photosensitizer and photoacid-producing agent. The diazonium quinone photosensitizer comprises one or more of the following chemical formulas: formula 6-10, wherein R1'-R17' is hydrogen or one of the following chemical formulas: formula 12, with hydrogen accounting for 20%-80% of the total and formula 12 accounting for 20%-80% of the total. Chemical formula 6 Chemical formula 7 Chemical formula 8 Chemical formula 9 Chemical formula 10; Chemical formula 11; Chemical formula 12; wherein R1-R23 is one of hydrogen or methyl.

[0006] Acrylic resins, with hydroxyl or carboxyl groups at the branch ends, provide developing properties. Combined with photosensitizers that inhibit the dissolution of acrylic resins and adjust their alkali solubility, they provide developing properties to the photoresist composition. Acrylic resins also have epoxy groups at the branch ends, providing cross-linking properties, enabling them to cross-link with cross-linking agents under high temperature or acidic environments. The presence of acidic photosensitive components and cross-linking agents, where the acidic photosensitive components generate acidic organic components after exposure, accelerates the cross-linking reaction of the acrylic resin, resulting in faster overall curing and maintaining the flatness of the photoresist layer. Furthermore, the presence of solubilizers, which also cross-link with the cross-linking agents, allows the solubilizers, being small molecules, to fill the gaps between the acrylic resin polymers. Cross-linking also makes the small molecules of the solubilizers less mobile, thus reducing the shrinkage rate of the photoresist layer during baking and improving flatness.

[0007] The acidic organic components generated by the acidic photosensitive components after exposure result in a pH of 6-1, preferably between 5-2, in the photoresist composition system.

[0008] In some embodiments, more specifically, the acrylic resin includes repeating units as shown in formulas (II-1) and (II-2) to provide the acrylic resin with developing properties and crosslinking properties: Formula (Ⅱ-1) Equation (Ⅱ-2);

[0009] The number of repeating units shown in formula (II-1) is at least 2, the number of repeating units shown in formula (II-2) is 1-70, and the average weight-average molecular weight of acrylic resins ranges from 1000 to 20000; R1 ’ -R2 ’ It is a hydrogen atom or a methyl group; the structural formula of the R1 group is one or more of the chemical formula 1; the structural formula of the R2 group is one or more of the chemical formula 2; Chemical formula 1: Chemical formula 2: The values ​​of n1-n8 range from 0 to 10.

[0010] In some embodiments, the branches of the acrylic resin further include aromatic groups and / or alicyclic groups, which can provide the resin matrix with heat resistance and chemical resistance. The aromatic group may be phenyl, and the alicyclic group may be one of adamantyl or cyclohexyl.

[0011] In some embodiments, more specifically, the acrylic resin further includes repeating units as shown in formula (Ⅱ-3) to provide the resin body with heat and chemical resistance properties: Formula (II-3); the average weight-average molecular weight range of acrylic resins is 1000-20000. It should be understood that the number of repeating units shown in Formula (II-3) is at least one; R3 ’ It is a hydrogen atom or a methyl group; the structural formula of the R3 group is one or more of the following chemical formulas; Chemical formula 3: The values ​​of n9-n16 range from 0 to 10.

[0012] In some embodiments, the side chains of the acrylic resin further include polar oxygen-containing groups, which can provide adhesive properties between the resin matrix and the substrate. These polar oxygen-containing groups can be ether groups, lactone groups, oxygen-containing heterocyclic groups, alkoxysilyl groups, etc.

[0013] In some embodiments, the acrylic resin further includes repeating units as shown in formula (Ⅱ-4) to provide adhesive properties between the resin body and the substrate: Formula (II-4); the average weight-average molecular weight range of acrylic resins is 1000-30000. It should be understood that the number of repeating units shown in Formula (II-4) is at least one; R4 ’ It is a hydrogen atom or a methyl group; the structural formula of the R4 group is one or more of the following chemical formulas; Chemical formula 4: The values ​​of n17-n26 range from 0 to 10.

[0014] Preferably, in some embodiments, the acrylic resin has the general structural formula of chemical formula 5: R1 ’ -R4 ’ The R1 group is a hydrogen atom or a methyl group; the structural formula of the R1 group is one or more of the chemical formulas 1; the structural formula of the R2 group is one or more of the chemical formulas 2; the structural formula of the R3 group is one or more of the chemical formulas 3; the structural formula of the R4 group is one or more of the chemical formulas 4; wherein, x1 is greater than or equal to 2, x2 is selected from 1-40, x3 is greater than or equal to 1, x4 is greater than or equal to 1, and the values ​​of n1-n26 are independently selected from 0-10; the average weight-average molecular weight range of acrylic resins is 1000-20000. Chemical Formula 1: Chemical formula 2: Chemical formula 3: Chemical formula 4: The use of acrylic resins with the general structural formula 5 in photoresist compositions can simultaneously provide the resin matrix of the photoresist composition with developability, crosslinking properties, heat and chemical resistance, and adhesion to the substrate. Preferably, the acrylic resins with the general structural formula 5 selected in this application have an average weight-average molecular weight range of 1000-30000 and an acid value of 20-100 KOH mg / g. The weight-average molecular weight in this application was determined according to the national standard GB / T 21863-2008 gel permeation chromatography (GPC) using tetrahydrofuran as the eluent, and a polystyrene standard was used to determine the standard curve.

[0015] In some embodiments, the photoacid generator has a structure of one or more of the following chemical formulas 13-18; Chemical formula 13 Chemical formula 14 Chemical formula 15 Chemical formula 16 Chemical formula 17 Chemical formula 18.

[0016] In some embodiments, the crosslinking agent is a melamine resin containing ether substituents, the molecular structure of which is shown in the following chemical formula 19: Chemical formula 19; where R 1 R 2 R 3 R 4 R 5 R 6Each can independently represent -H, -OH, -CH3, -CH2OH, -CH2CH2OH, -CH2OCH3, -CH2CH2OCH3, -OCH3, -OCH2CH3, R 1 -R 6 The substituents contain multiple ether bonds, and the crosslinking agent has 3-6 ether bonds.

[0017] Preferably, the structural formula of the melamine resin containing ether bonds can be one or more of the structural formulas shown below:

[0018] Structural Formula 1 Structural Formula 2 Structural Formula 3 Structural Formula 4 Structural Formula 5 Structure 6.

[0019] In some embodiments, the dissolution promoter is selected from one or more combinations of compounds represented by the following chemical formulas 20-31: Chemical formula 20 Chemical formula 21 Chemical formula 22 Chemical formula 23 Chemical formula 24 Chemical formula 25 Chemical formula 26 Chemical formula 27 Chemical formula 28 Chemical formula 29 Chemical formula 30 Chemical formula 31.

[0020] In some embodiments, the organic solvent includes one or more of benzyl alcohol, benzyl alcohol, γ-butyrolactone, propylene glycol methyl ether acetate, ethyl lactate, ethyl acetate, n-butyl acetate, ethyl ethoxypropionate, methyl 3-methylpropionate, anisole, propylene glycol monomethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, diethylene glycol methyl ethyl ether, tetrahydrofuran, N-methylpyrrolidone, toluene, xylene, and cyclohexane. The above-described organic solvents are merely partial examples; in practice, any suitable organic solvent known to those skilled in the art can be used.

[0021] In some embodiments, the surfactant is a silicone-containing surfactant. Preferably, the silicone-containing surfactant includes any one or a combination of at least two of polyether siloxane copolymers, polyether-modified siloxane copolymers, or polyester-modified polydimethylsiloxane copolymers.

[0022] The photoresist composition may also include any other suitable additives known to those skilled in the art to improve the performance of the photoresist composition.

[0023] In some embodiments, based on the total mass of the photoresist composition, the mass percentage of acrylic resin is 3.5%-28.3%, the mass percentage of photosensitizer is 0.5%-8.3%, the mass percentage of acidic photosensitizing component is 0.1%-5.0%, the mass percentage of crosslinking agent is 0.5%-5.0%, the mass percentage of solubility promoter is 0.5%-6.7%, the mass percentage of surfactant is 0.001%-1.7%, and the mass percentage of organic solvent is 45%-94.9%.

[0024] In some embodiments, the mass ratio of acrylic resin to crosslinking agent is 20 to 2:1, preferably 10 to 3:1. Too little crosslinking agent will result in insufficient crosslinking of the photoresist, leading to poor heat resistance and chemical resistance. Too much crosslinking agent will result in excessive crosslinking of the photoresist, increasing the shrinkage rate during baking and affecting the flatness of the photoresist.

[0025] In some embodiments, the mass ratio of acrylic resin to solubilizer is 20 to 2:1, preferably 10 to 3:1. Using too little solubilizer will result in insufficient small molecules to fill the gaps in the macromolecular chains, which will increase the shrinkage rate of the photoresist during baking and thus reduce the flatness. Using too much solubilizer will result in the unexposed film developing too quickly, resulting in high film loss after development.

[0026] According to another aspect of this application, a method for forming a photoresist pattern is also provided, comprising the following steps: S1: providing a substrate and coating any of the above-mentioned photoresist compositions onto the substrate; S2: performing pre-baking on the photoresist composition coated in step S1; S3: using a photomask, exposing the photoresist composition baked in step S2 on a photolithography machine; S4: removing the photomask and immersing the photoresist composition exposed in step S3 in a developing solution for development; S5: immersing the photoresist film layer obtained in step S4 in a photolithography machine for maskless overexposure processing; S6: immersing the photoresist film layer obtained in step S5 in a high-temperature oven for hard film baking to obtain a photoresist pattern.

[0027] In some embodiments, the method for forming a photoresist pattern may include one or more of the following features: (1) the coating method in step S1 is spin coating or slot coating; (2) the baking temperature in step S2 is 80~130°C and the baking time is 60s~200s; (3) the developer in step S4 is a tetramethylammonium hydroxide aqueous solution with a concentration range of 0.4~3.5% and the development time is 40s~300s; (4) the hard film baking temperature in step S6 is 180-250°C and the baking time is 10-60min.

[0028] This application addresses the technical problem of low flatness caused by the high shrinkage rate of the bulk resin when forming photoresist patterns using existing photoresist compositions. The proposed solution involves an acrylic resin bulk resin comprising epoxy groups, along with an acidic photosensitive component and a crosslinking agent. After general exposure, the acidic photosensitive component generates acidic organic components that catalyze a rapid crosslinking reaction between the acrylic resin bulk resin and the crosslinking agent, resulting in rapid overall curing of the photoresist. Furthermore, the addition of small molecules that function as dissolution promoters fills the gaps between polymers, leading to a lower shrinkage rate and thus achieving high flatness in the photoresist film layer. Detailed Implementation

[0029] The invention is described in more detail through the following embodiments. However, the following embodiments are given for illustrative purposes only, and the scope of the invention is not intended to be limited to the following embodiments.

[0030] Unless otherwise specified, in the following examples and comparative examples, the temperature is in Celsius, and the parts and percentages are by weight.

[0031] There are no limitations on the examples of methods for synthesizing acrylic resins, but the following method for synthesizing acrylic polymers can be used: The molar ratio of methacrylic acid, 5-hydroxypentyl methacrylate, and glycidyl methacrylate is set to 2:3:2, with a total feed weight of 100 g. A syringe pump is used, the feeding time is 2.5 hours, the solvent is propylene glycol methyl ether acetate (300 g), the reaction auxiliary is 1.0 g AIBN, the reaction temperature is 75°C, and the reaction is maintained at this temperature for 3 hours, yielding the resin of Example 1. Acrylic resins of other examples are obtained by replacing the corresponding monomers using the same method.

[0032] Example 1:

[0033] Resin:

[0034] Photosensitizer: α,α,α'-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene-1,2-naphthoquinone diazo-5-sulfonate

[0035] Acidic photosensitizing component: α,α,α'-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene-1,2-naphthoquinone diazo-4-sulfonate

[0036] Crosslinking agent:

[0037] Solubility promoter:

[0038] Surfactant: Polyether-modified siloxane copolymer

[0039] Organic solvent: ethyl lactate

[0040] Example 2:

[0041] Resin:

[0042] Photosensitizer: α,α,α'-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene-1,2-naphthoquinone diazo-5-sulfonate

[0043] Acidic photosensitizing components:

[0044] Crosslinking agent:

[0045] Solubility promoter:

[0046] Surfactant: Polyether-modified siloxane copolymer

[0047] Organic solvent: ethyl lactate

[0048] Example 3:

[0049] Resin:

[0050] Photosensitizer: α,α,α'-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene-1,2-naphthoquinone diazo-5-sulfonate

[0051] Acidic photosensitizing components:

[0052] Crosslinking agent:

[0053] Solubility promoter:

[0054] Surfactant: Polyether-modified siloxane copolymer

[0055] Organic solvent: ethyl lactate

[0056] Example 4:

[0057] Resin:

[0058] Photosensitizer: α,α,α'-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene-1,2-naphthoquinone diazo-5-sulfonate

[0059] Acidic photosensitizing components:

[0060] Crosslinking agent:

[0061] Solubility promoter:

[0062] Surfactant: Polyether-modified siloxane copolymer

[0063] Organic solvent: ethyl lactate

[0064] Example 5:

[0065] Resin:

[0066] Photosensitizer: α,α,α'-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene-1,2-naphthoquinone diazo-5-sulfonate

[0067] Acidic photosensitizing components:

[0068] Crosslinking agent:

[0069] Solubility promoter:

[0070] Surfactant: Polyether-modified siloxane copolymer

[0071] Organic solvent: ethyl lactate

[0072] Example 6:

[0073] Resin:

[0074] Photosensitizer: α,α,α'-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene-1,2-naphthoquinone diazo-5-sulfonate

[0075] Acidic photosensitizing components:

[0076] Crosslinking agent:

[0077] Solubility promoter:

[0078] Surfactant: Polyether-modified siloxane copolymer

[0079] Organic solvent: ethyl lactate

[0080] Example 7:

[0081] Resin:

[0082] Photosensitizer: α,α,α'-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene-1,2-naphthoquinone diazo-5-sulfonate

[0083] Acidic photosensitizing components:

[0084] Crosslinking agent:

[0085] Solubility promoter:

[0086] Surfactant: Polyether-modified siloxane copolymer

[0087] Organic solvent: ethyl lactate

[0088] Example 8:

[0089] Resin:

[0090] Photosensitizer: α,α,α'-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene-1,2-naphthoquinone diazo-5-sulfonate

[0091] Acidic photosensitizing components:

[0092] Crosslinking agent:

[0093] Solubility promoter:

[0094] Surfactant: Polyether-modified siloxane copolymer

[0095] Organic solvent: ethyl lactate

[0096] Comparative Example 1: No acidic photosensitizing components and crosslinking agents.

[0097] Resin:

[0098] Photosensitizer: α,α,α'-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene-1,2-naphthoquinone diazo-5-sulfonate

[0099] Solubility promoter:

[0100] Surfactant: Polyether-modified siloxane copolymer

[0101] Organic solvent: ethyl lactate

[0102] Comparative Example 2: Without dissolution promoters filling the pores

[0103] Resin:

[0104] Photosensitizer: α,α,α'-tris(4-hydroxyphenyl)-1-ethyl-4-isopropylbenzene-1,2-naphthoquinone diazo-5-sulfonate

[0105] Acidic photosensitizing components:

[0106] Crosslinking agent:

[0107] Solubility accelerator: None

[0108] Surfactant: Polyether-modified siloxane copolymer

[0109] Organic solvent: ethyl lactate

[0110] The aforementioned prepared resin, photosensitizer, acidic photosensitizing component, crosslinking agent, solubilizer, surfactant, and organic solvent were used to prepare the photoresist compositions of Examples 1-8 according to the composition formulations shown in Table 1.

[0111]

[0112] Table 1 (The content of each component is in mass percentage / wt%)

[0113] The photoresist compositions of Examples 9 and 10 have the same composition as those of Example 8, except that the content of each substance is different, as shown in Table 2 below.

[0114]

[0115] Table 2

[0116] The aforementioned prepared resin, photosensitizer, acidic photosensitizing component, crosslinking agent, solubilizer, surfactant, and organic solvent were used to prepare photoresist compositions for Comparative Examples 1-2 according to the composition formulations shown in Table 3.

[0117]

[0118] Table 3

[0119] Photoresist film preparation:

[0120] The photoresist compositions prepared in the examples and comparative examples were spin-coated onto a silicon wafer substrate with a step height of 2 μm to achieve a film thickness of 3 μm. The substrate was baked at 100°C for 120 s. The baked photoresist composition was then placed in a 2.38% tetramethylammonium hydroxide aqueous solution for development for 100 s. The obtained photoresist film was then placed in a high-temperature oven and baked at 220°C for 30 minutes to obtain a photoresist pattern.

[0121] Flatness test: The thickness from the photoresist surface to the substrate at the top of the step is observed with an electron microscope and recorded as the maximum film thickness. The thickness from the photoresist surface to the substrate at the part without the step is recorded as the minimum film thickness. The flatness is then calculated using the following formula.

[0122]

[0123] The flatness of the photoresist patterns in each embodiment and comparative example was measured, and the results are shown in Table 4 below.

[0124]

[0125] Table 4

[0126] The above description is merely an example embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A photoresist composition, characterized in that, Includes the following components: Acrylic resins with hydroxyl or carboxyl groups at the end of their branches; Photosensitizer for adjusting the alkali solubility of resin; Surfactants; Organic solvents; The branched ends of the acrylic resin also include epoxy groups; The photoresist composition further includes an acidic photosensitizing component, a crosslinking agent, and a dissolution promoter that fills the spaces between acrylic resin molecular chains during crosslinking; The solubility promoter is an aromatic compound containing 2 to 8 phenolic hydroxyl functional groups, and the molecular weight of the aromatic compound is less than 800. The photosensitizer is selected from the first diazonoquinone photosensitizer, the first diazonoquinone photosensitizer having one or more of chemical formulas 6-10, wherein R1'-R17' is hydrogen or one of chemical formula 11, hydrogen accounts for 20%-80% of the total, and chemical formula 11 accounts for 20%-80% of the total; The acidic photosensitizing component comprises one or more of a second diazonoquinone photosensitizer and a photoacid-producing agent; the second diazonoquinone photosensitizer has a structure of one or more of chemical formulas 6-10, wherein R1'-R17' is hydrogen or one of chemical formula 12, with hydrogen accounting for 20%-80% of the total and chemical formula 12 accounting for 20%-80% of the total; Chemical formula 6 Chemical formula 7 Chemical formula 8 Chemical formula 9 Chemical formula 10; Chemical formula 11; Chemical formula 12; Among them, R1-R23 is one of hydrogen or methyl.

2. The photoresist composition according to claim 1, characterized in that, The acrylic resin comprises repeating units as shown in formulas (II-1) and (II-2): Formula (Ⅱ-1) Equation (Ⅱ-2); The number of repeating units shown in equation (Ⅱ-1) is at least 2, and the number of repeating units shown in equation (Ⅱ-2) is 1-70; R1 ’ -R2 ’ It is a hydrogen atom or a methyl group; the structural formula of the R1 group is one or more of the chemical formula 1; the structural formula of the R2 group is one or more of the chemical formula 2; Chemical Formula 1: ； Chemical formula 2: ； The values ​​of n1-n8 range from 0 to 10, and the average weight-average molecular weight of the acrylic resin ranges from 1000 to 20000.

3. The photoresist composition according to claim 1, characterized in that, The branched chains of the acrylic resins also include aromatic groups and / or alicyclic groups.

4. The photoresist composition according to claim 1, characterized in that, The acrylic resin further includes repeating units as shown in formula (Ⅱ-3): Formula (Ⅱ-3); The average weight-average molecular weight of the acrylic resin is in the range of 1000-20000; R3 ’ It is a hydrogen atom or a methyl group; the structural formula of the R3 group is one or more of the chemical formula 3; Chemical formula 3: The values ​​of n9-n16 range from 0 to 10.

5. The photoresist composition according to claim 1, characterized in that, The branched chains of the acrylic resin also include polar oxygen-containing groups.

6. The photoresist composition according to claim 1, characterized in that, The acrylic resin further includes repeating units as shown in formula (Ⅱ-4): Equation (Ⅱ-4); The average weight-average molecular weight of the acrylic resin is in the range of 1000-20000; R4 ’ It is a hydrogen atom or a methyl group; the structural formula of the R4 group is one or more of the four chemical formulas; Chemical formula 4: ； The values ​​of n17-n26 range from 0 to 10.

7. The photoresist composition according to claim 1, characterized in that, The general structural formula of the acrylic resin is chemical formula 5: R1 ’ -R4 ’ The R1 group is a hydrogen atom or a methyl group; the R1 group has a structural formula of one or more of chemical formula 1; the R2 group has a structural formula of one or more of chemical formula 2; the R3 group has a structural formula of one or more of chemical formula 3; the R4 group has a structural formula of one or more of chemical formula 4; wherein, x1 is greater than or equal to 2, x2 is selected from 1-40, x3 is greater than or equal to 1, x4 is greater than or equal to 1, and the values ​​of n1-n26 are independently selected from 0-10, and the average weight-average molecular weight of the acrylic resin is in the range of 1000-20000; Chemical Formula 1: ； Chemical formula 2: ； Chemical formula 3: ； Chemical formula 4: 。 8. The photoresist composition according to claim 1, characterized in that, The structure of the photo-induced acid-producing agent is one or more of the following chemical formulas 13-18; Chemical formula 13 Chemical formula 14 Chemical formula 15 Chemical formula 16 Chemical formula 17 Chemical formula 18.

9. The photoresist composition according to claim 1, characterized in that, The crosslinking agent is a melamine resin containing ether substituents, and its molecular structure is shown in the following chemical formula 19: Chemical formula 19; Among them, R 1 R 2 R 3 R 4 R 5 R 6 Each can independently represent -H, -OH, -CH3, -CH2OH, -CH2CH2OH, -CH2OCH3, -CH2CH2OCH3, -OCH3, -OCH2CH3, R 1 -R 6 The substituents contain multiple ether bonds, and the crosslinking agent has 3-6 ether bonds.

10. The photoresist composition according to claim 1, characterized in that, The solubility promoter is selected from one or more compounds shown in chemical formulas 20-31: Chemical formula 20 Chemical formula 21 Chemical formula 22 Chemical formula 23 Chemical formula 24 Chemical formula 25 Chemical formula 26 Chemical formula 27 Chemical formula 28 Chemical formula 29 Chemical formula 30 Chemical formula 31.

11. The photoresist composition according to claim 1, characterized in that, Based on the total mass of the photoresist composition, the acrylic resin comprises 3.5%-28.3% by mass, the photosensitizer comprises 0.5%-8.3% by mass, the acidic photosensitizing component comprises 0.1%-5.0% by mass, the crosslinking agent comprises 0.5%-5.0% by mass, the solubility promoter comprises 0.5%-6.7% by mass, the surfactant comprises 0.001%-1.7% by mass, and the organic solvent comprises 45%-94.9% by mass.

12. The photoresist composition according to claim 1, characterized in that, The mass ratio of the acrylic resin to the crosslinking agent is 20 to 2:

1.

13. The photoresist composition according to claim 12, characterized in that, The mass ratio of the acrylic resin to the crosslinking agent is 10~3:

1.

14. The photoresist composition according to claim 1, characterized in that, The mass ratio of the acrylic resin to the solubility accelerator is 20 to 2:

1.

15. The photoresist composition according to claim 14, characterized in that, The mass ratio of the acrylic resin to the solubility accelerator is 10~3:

1.

16. A method for forming a photoresist pattern, characterized in that, Includes the following steps: S1: Provide a substrate, and coat the photoresist composition according to any one of claims 1-15 onto the substrate; S2: Perform pre-baking on the photoresist composition coated in step S1; S3: Using a photomask, expose the photoresist composition baked in step S2 on a photolithography machine; S4: Remove the photomask and immerse the exposed photoresist composition from step S3 in the developing solution for development; S5: Place the photoresist film layer obtained in step S4 into a photolithography machine for maskless general exposure processing; S6: Place the photoresist film obtained in step S5 into a high-temperature oven for hard film baking to obtain a photoresist pattern.

17. The method for forming a photoresist pattern according to claim 16, characterized in that, Includes one or more of the following characteristics: (1) The coating method in step S1 is either spin coating or slot coating; (2) The baking temperature of the pre-baking in step S2 is 80~130°C and the baking time is 60s~200s; (3) The developing solution in step S4 is a tetramethylammonium hydroxide aqueous solution with a concentration range of 0.4~3.5%, and the developing time is 40s~300s; (4) In step S6, the baking temperature of the hard film is 180-250°C and the baking time is 10-60 min.

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