Atomic confinement system, atomic confinement method, and related devices

Abstract

An atomic confinement system, an atomic confinement method and related devices. The atomic confinement system comprises a ground state atomic confinement unit, an excited state atomic confinement unit and an atomic operation unit. The ground state atomic confinement unit is configured to construct a first potential well. The excited state atomic confinement unit is configured to construct a second potential well, the second potential well is formed based on an electrostatic field, and the electric field intensity of the second potential well at a potential well position is less than a preset threshold. The atomic operation unit is configured to load a ground state atom so that the ground state atom is confined to the potential well position by the first potential well; and perform excitation processing on the ground state atom to obtain an excited state atom, the excited state atom is confined to the potential well position by the first potential well and the second potential well. In this application, during the excitation processing and quantum computing of the atom, the original potential well does not need to be closed, and the problem that the excited state atom will gradually deviate from its original position due to the loss of the confinement potential is solved.

Description

Technical Field

[0001] This application relates to the field of quantum computing technology, and in particular to atomic confinement systems, atomic confinement methods and related devices. Background Technology

[0002] With the development of quantum technology, the fields of quantum computing and simulation are growing at an unprecedented rate. Neutral atom quantum systems, due to their long coherence time and high scalability, are considered one of the most promising pathways to realizing quantum computing. In the quantum computing process of neutral atoms, some atoms need to be excited from their ground state to excited states for quantum computation. The ground-state atoms are confined by a potential well (such as an optical trap or optical lattice), but this potential well repels the excited-state atoms. Therefore, during the excitation of ground-state atoms and quantum computing, the potential well is generally closed to avoid the repulsion of the excited-state atoms. However, closing the potential well presents the following problem: during the excitation process and quantum computing, due to the lack of a confinement potential, the excited-state atoms gradually deviate from their original positions, reducing the accuracy of the quantum computing results. Summary of the Invention

[0003] To address the aforementioned issues, this application provides an atomic confinement system, atomic confinement method, and related apparatus. During the excitation of atoms and quantum computing, it is not necessary to shut down the original potential well, thus solving the problem that excited-state atoms gradually deviate from their original positions due to the lack of confinement potential.

[0004] Therefore, the following technical solution is adopted in this application:

[0005] In a first aspect, this application provides an atomic confinement system, comprising ground-state atomic confinement units, excited-state atomic confinement units, and atomic manipulation units. The ground-state atomic confinement units are used to construct a first potential well; the first potential well represents a potential well that confines ground-state atoms to a potential well location. The excited-state atomic confinement units are used to construct a second potential well; the second potential well represents a potential well that confines excited-state atoms to a potential well location, the second potential well being formed based on an electrostatic field, and the electric field strength at the potential well location of the second potential well being less than a preset threshold. The atomic manipulation units are used to load ground-state atoms so that the ground-state atoms are confined to the potential well locations by the first potential well; and to excite the ground-state atoms to obtain excited-state atoms, which are then confined to the potential well locations by the first and second potential wells.

[0006] In this application, to avoid the lack of confinement potential for excited-state atoms, the first potential well is continuously opened during the manipulation of excited-state atoms (including activation processing and quantum manipulation). A second potential well is directly generated through an electrostatic field and controlled so that even when the first potential well exerts a repulsive force on the excited-state atoms, the second potential well formed by the electrostatic field can still confine them. Compared to techniques that confine excited-state atoms by adjusting the laser wavelength, this application uses a second potential well generated by an electrostatic field to confine them, avoiding the problems of high laser power, high heat dissipation and temperature control requirements of red detuned optical trap technology, and also avoiding the decoherence effect caused by the difference in potential energy between ground-state and excited-state atoms in blue detuned optical trap technology, thus avoiding the problem of limited quantum circuit depth. The long coherence time of ground-state atoms and the strong interaction with excited-state atoms can be used to deepen the quantum circuit. Since the first potential well does not need to be closed in the quantum circuit, the atom loss rate can be greatly reduced, solving the problem of insufficient quantum circuit depth for excited-state atoms in quantum computing.

[0007] In one possible implementation, the excited-state atom confinement unit described above includes: an electrode structure for forming a second potential well; wherein the electrode structure includes multiple electrodes, and the multiple electrodes include a region where the electric field strength is less than a preset threshold.

[0008] In this implementation, by constructing an electrode structure, it is possible to achieve a region between multiple electrodes where the electric field strength is less than a preset threshold. This region coincides with the potential well position of the first potential well, thereby enabling the confinement of the excited atoms.

[0009] In one possible implementation, the electrode structure includes: a first electrode structure for forming a second potential well; the first electrode structure includes a first electrode and a second electrode disposed opposite to each other, both of which are positive, and a second potential well is formed between the first electrode and the second electrode.

[0010] In this implementation, a confinement potential can be generated simply by setting the first and second electrodes in one dimension. This implementation does not require a complex electrode structure; it only requires setting the electrodes in one dimension to generate the trapping potential, thus preserving the optical intervening capability in the optical trap to the greatest extent and reducing the adverse effects of adding a second potential trap on the first potential trap.

[0011] In one possible implementation, the electrode structure includes: a second electrode structure for forming a second potential well; the second electrode structure includes opposing third and fourth electrodes, the third and fourth electrodes having the same polarity; the second electrode structure also includes opposing fifth and sixth electrodes, the fifth and sixth electrodes having the same polarity; the third and fifth electrodes having opposite polarities; wherein the second potential well is formed between the third, fourth, fifth, and sixth electrodes.

[0012] In this implementation, the second electrode structure generates an electrostatic field from the positive electrode of the four electrodes to the adjacent negative electrode. This increases the electric field gradient at the zero-field point along the line perpendicular to the line connecting the two positive electrodes, making the electric field gradient more uniform in all directions at the zero-field point. This results in a more uniform degree of confinement of excited-state atoms in any direction.

[0013] In one possible implementation, the electrode structure includes: a third electrode structure for forming a second potential well; the third electrode structure includes opposing first and second electrode arrays, the first electrode array including adjacent seventh and eighth electrodes, the second electrode array including adjacent ninth and tenth electrodes, the seventh and ninth electrodes being arranged opposite to each other, the eighth and tenth electrodes being arranged opposite to each other, the seventh and eighth electrodes having opposite polarities, the ninth and tenth electrodes having the same polarity, and the eighth and ninth electrodes having the same polarity; wherein, a second potential well is formed between the seventh, eighth, ninth, and tenth electrodes.

[0014] In this implementation, by setting up relative first and second electrode arrays, multiple excited-state atoms can be confined, thus making it suitable for more complex scenarios.

[0015] In one possible implementation, the system further includes: a constraint potential adjustment unit for adjusting the parameters of the first potential well and / or the second potential well to match the first constraint potential with the second constraint potential; the first constraint potential represents the degree of constraint of the first potential well on the ground state atom, and the second constraint potential represents the degree of constraint of the first potential well and the second potential well on the excited state atom together.

[0016] In this implementation, because the energy levels of excited-state atoms are extremely sensitive to electric fields, the electrostatic field can tightly bind the excited-state atoms, and the confinement potential generated by the electrostatic field is much greater than the repulsive potential generated by the first potential well. By adjusting the parameters of the first potential well, such as controlling the position, size, and depth of the optical trap; or by adjusting the parameters of the second potential well, such as the electric field strength and electric field gradient of the electrostatic field, the first and second confinement potentials can be matched, thus forming a magic trap between the ground state and the excited state. The second confinement potential represents the combined effect of the attraction potential of the electrostatic field to the excited-state atoms and the repulsion potential of the first potential well to the excited-state atoms. Since the magic trap reduces the atomic loss of excited-state atoms, the number of repeated experiments that can be performed on excited-state atoms will be greatly increased; for example, in the application of the Rydberg single-photon source, this will greatly increase the single-photon generation rate. Furthermore, the long coherence time of the ground-state atoms and the strong interaction with the excited-state atoms can be used to deepen the quantum circuit; for example, since the magic trap does not need to be closed in the quantum circuit, the atomic loss rate can be greatly reduced, solving the problem of insufficient quantum circuit depth in Rydberg quantum computing.

[0017] In one possible implementation, the excited-state atoms mentioned above include atoms in the Rydberg state.

[0018] In this implementation, the Rydberg state refers to a highly excited state of an atomic or molecular system. Compared to the ground state atom, the electron cloud of an atom in the Rydberg state is increased by several orders of magnitude.

[0019] In one possible implementation, the region where the electric field strength is less than a preset threshold is the zero electric field point of the second potential well, where the zero electric field point represents the region in the second potential well where the electric field strength is zero.

[0020] In this implementation, the zero electric field point is an example of a region where the electric field strength is less than a preset threshold, but it does not constitute a limitation of this application. For example, an electrode structure can also be set to achieve a region where the electric field appears at a minimum, which is another example of a region where the electric field strength is less than a preset threshold.

[0021] In one possible implementation, the first potential well described above includes an optical well and / or an optical lattice.

[0022] In this implementation, the optical trap is a potential well formed by the interaction of a laser with the atomic dipole moment, such as the red-detuned optical trap and the blue-detuned optical trap mentioned above. Optical lattices, periodic potential well structures formed by laser interference, have become a core platform for research in cold atom physics and quantum technology. Optical traps and optical lattices can be understood as examples of the first potential well in this application. The first potential well can be any potential well that confines ground-state atoms to the potential well position; this application does not impose any restrictions on this.

[0023] Secondly, this application provides an atomic confinement method, comprising: constructing a first potential well; the first potential well representing a potential well for confining ground-state atoms to a potential well position; constructing a second potential well; the second potential well representing a potential well for confining excited-state atoms to a potential well position, the second potential well being formed based on an electrostatic field, the electric field strength of the second potential well at the potential well position being less than a preset threshold; loading ground-state atoms; the ground-state atoms being confined to the potential well position by the first potential well; exciting the ground-state atoms to obtain excited-state atoms; the excited-state atoms being confined to the potential well position by the first potential well and the second potential well.

[0024] In one possible implementation, constructing the second potential well includes: setting an electrode structure to form the second potential well; wherein the electrode structure includes multiple electrodes, and the multiple electrodes include a region where the electric field strength is less than a preset threshold.

[0025] In one possible implementation, the above-described electrode structure for forming a second potential well includes: setting a first electrode structure for forming a second potential well; the first electrode structure includes a first electrode and a second electrode disposed opposite to each other, both of which are positive, and a second potential well is formed between the first electrode and the second electrode.

[0026] In one possible implementation, the above-described electrode structure for forming a second potential well includes: setting a second electrode structure to form a second potential well; the second electrode structure includes opposing third and fourth electrodes, the third and fourth electrodes having the same polarity; the second electrode structure also includes opposing fifth and sixth electrodes, the fifth and sixth electrodes having the same polarity; the third and fifth electrodes having opposite polarities; wherein the second potential well is formed between the third, fourth, fifth, and sixth electrodes.

[0027] In one possible implementation, the above-described electrode structure for forming a second potential well includes: setting a third electrode structure to form a second potential well; the third electrode structure includes opposing first electrode arrays and second electrode arrays, the first electrode array including adjacent seventh and eighth electrodes, the second electrode array including adjacent ninth and tenth electrodes, the seventh and ninth electrodes being oppositely arranged, the eighth and tenth electrodes being oppositely arranged, the seventh and eighth electrodes having opposite polarities, the ninth and tenth electrodes having the same polarity, and the eighth and ninth electrodes having the same polarity; wherein, a second potential well is formed between the seventh, eighth, ninth, and tenth electrodes.

[0028] In one possible implementation, the method further includes: adjusting the parameters of the first potential well and / or the second potential well to match the first constraint potential with the second constraint potential; the first constraint potential represents the degree of constraint of the first potential well on the ground state atom, and the second constraint potential represents the degree of constraint of the first potential well and the second potential well on the excited state atom together.

[0029] In one possible implementation, the excited-state atoms mentioned above include atoms in the Rydberg state.

[0030] In one possible implementation, the region where the electric field strength is less than a preset threshold is the zero electric field point of the second potential well, where the zero electric field point represents the region in the second potential well where the electric field strength is zero.

[0031] In one possible implementation, the first potential well described above includes an optical well and / or an optical lattice.

[0032] In one possible implementation, the above method further includes performing logical operations based on excited-state atoms to obtain the results of quantum computing.

[0033] Thirdly, this application provides an atomic confinement device, mainly comprising: a potential well construction module for constructing a first potential well. The first potential well represents a potential well that confines ground-state atoms to a potential well location. And, a potential well construction module for constructing a second potential well. The second potential well represents a potential well that confines excited-state atoms to a potential well location. The second potential well is formed based on an electrostatic field. The electric field strength of the second potential well at the potential well location is less than a preset threshold. An atomic manipulation module for loading ground-state atoms. The ground-state atoms are confined to the potential well location by the first potential well. And, an atomic manipulation module for exciting the ground-state atoms to obtain excited-state atoms. The excited-state atoms are confined to the potential well locations by the first and second potential wells.

[0034] In one possible implementation, when constructing the second potential well, the aforementioned potential well construction module is specifically used to: set an electrode structure to form the second potential well; wherein the electrode structure includes multiple electrodes, and the multiple electrodes include a region where the electric field strength is less than a preset threshold.

[0035] In one possible implementation, when setting the electrode structure to form the second potential well, the aforementioned potential well construction module is specifically used to: set the first electrode structure to form the second potential well; the first electrode structure includes a first electrode and a second electrode arranged opposite to each other, both of which are positive, and a second potential well is formed between the first electrode and the second electrode.

[0036] In one possible implementation, when setting the electrode structure to form a second potential well, the aforementioned potential well construction module is specifically used to: set the second electrode structure to form a second potential well; the second electrode structure includes opposing third and fourth electrodes, the third and fourth electrodes having the same polarity; the second electrode structure also includes opposing fifth and sixth electrodes, the fifth and sixth electrodes having the same polarity; the third and fifth electrodes having opposite polarities; wherein, a second potential well is formed between the third, fourth, fifth, and sixth electrodes.

[0037] In one possible implementation, when setting the electrode structure to form a second potential well, the aforementioned potential well construction module is specifically used to: set a third electrode structure to form a second potential well; the third electrode structure includes opposing first electrode arrays and second electrode arrays, the first electrode array includes adjacent seventh and eighth electrodes, the second electrode array includes adjacent ninth and tenth electrodes, the seventh and ninth electrodes are arranged opposite to each other, the eighth and tenth electrodes are arranged opposite to each other, the seventh and eighth electrodes have opposite polarities, the ninth and tenth electrodes have the same polarity, and the eighth and ninth electrodes have the same polarity; wherein, a second potential well is formed between the seventh, eighth, ninth, and tenth electrodes.

[0038] In one possible implementation, the aforementioned potential well construction module is further configured to: adjust the parameters of the first potential well and / or the second potential well to match the first constraint potential with the second constraint potential; the first constraint potential represents the degree of constraint of the first potential well on the ground state atom, and the second constraint potential represents the degree of constraint of the first potential well and the second potential well together on the excited state atom.

[0039] In one possible implementation, the excited-state atoms mentioned above include atoms in the Rydberg state.

[0040] In one possible implementation, the region where the electric field strength is less than a preset threshold is the zero electric field point of the second potential well, where the zero electric field point represents the region in the second potential well where the electric field strength is zero.

[0041] In one possible implementation, the first potential well described above includes an optical well and / or an optical lattice.

[0042] In one possible implementation, the aforementioned atomic operation module is also used to: perform logical operations based on excited-state atoms to obtain the results of quantum computing.

[0043] Fourthly, this application provides a quantum computing system, including the atomic constraint system described in the first aspect and any possible implementation thereof. The atomic operation units therein are further used to: perform logical operations based on excited-state atoms to obtain the results of quantum computing.

[0044] Fifthly, this application provides an electronic device, comprising: at least one memory for storing a program; and at least one processor for executing the program stored in the memory; wherein, when the program stored in the memory is executed, the processor is configured to perform the method as described in the second aspect.

[0045] In a sixth aspect, this application provides a computer-readable storage medium storing a computer program that, when run on a processor, causes the processor to perform the method described in the second aspect.

[0046] In a seventh aspect, this application provides a computer program product that, when run on a processor, causes the processor to perform the method described in the second aspect.

[0047] It is understood that the beneficial effects of the second to seventh aspects mentioned above can be found in the relevant descriptions in the first aspect mentioned above, and will not be repeated here. Attached Figure Description

[0048] The accompanying drawings used in the embodiments or technical description are briefly introduced below.

[0049] Figure 1a A schematic diagram of an optical tweezers array provided for related technologies;

[0050] Figure 1b A schematic diagram of a quantum computing process using neutral atoms, provided for related technologies;

[0051] Figure 2 This is a schematic diagram of the composition of an atomic confinement system provided in an embodiment of this application;

[0052] Figure 3a A schematic diagram of a first example of an electrode structure provided in an embodiment of this application;

[0053] Figure 3b A schematic diagram of the electrostatic field of a first example of an electrode structure provided in an embodiment of this application;

[0054] Figure 4 A schematic diagram of a second example of the electrode structure provided in the embodiments of this application;

[0055] Figure 5a A schematic diagram of a third example of the electrode structure provided in the embodiments of this application;

[0056] Figure 5b A schematic diagram of an extended structure of a third example of the electrode structure provided in the embodiments of this application;

[0057] Figure 5c A schematic diagram of another extended structure of the third example of the electrode structure provided in the embodiments of this application;

[0058] Figure 6 A schematic diagram of ground-state atoms and excited-state atoms provided in the embodiments of this application;

[0059] Figure 7a This is a schematic diagram of the composition of a quantum computing system provided in an embodiment of this application;

[0060] Figure 7b A schematic diagram illustrating the composition of an example quantum computing system provided in an embodiment of this application;

[0061] Figure 8 A flowchart illustrating an atomic constraint method provided in an embodiment of this application;

[0062] Figure 9 This is a schematic diagram of the composition of an atomic confinement device provided in the embodiments of this application;

[0063] Figure 10 This is a schematic diagram of the structure of a computing device provided in an embodiment of this application. Detailed Implementation

[0064] The technical solutions in the embodiments of this application will now be described with reference to the accompanying drawings.

[0065] In this article, the term "and / or" describes the relationship between related objects, indicating that there can be three relationships. For example, A and / or B can represent three cases: A exists alone, A and B exist simultaneously, and B exists alone. The symbol " / " in this article indicates that the related objects have an "or" relationship; for example, A / B means A or B.

[0066] The terms "first" and "second," etc., used in the specification and claims herein are used to distinguish different objects, not to describe a specific order of objects. For example, "first response message" and "second response message," etc., are used to distinguish different response messages, not to describe a specific order of response messages.

[0067] In the embodiments of this application, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design that is described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design. Specifically, the use of the terms "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0068] In the description of the embodiments in this application, unless otherwise stated, "multiple" means two or more, for example, multiple processing units means two or more processing units, etc.; multiple elements means two or more elements, etc. "Several" means one or more.

[0069] To facilitate understanding of the solutions provided in the embodiments of this application, a brief introduction to some of the terms involved in this solution will be given first.

[0070] Quantum bits (qubits): The basic building blocks of quantum information. Unlike classical bits in traditional binary computers, which can only exist in 0 or 1 states, qubits can exist in a superposition of 0 and 1 states. Qubits can be carried by various materials, including superconducting circuits, ions, atoms, photons, and quantum dots.

[0071] Physical bit: The physical carrier of a quantum bit, which can be an ion, an atom, a photon, etc. In this application, the embodiments further study the physical bit of the "atom" type.

[0072] Logical bit: Composed of multiple physical bits, quantum information is encoded in a specific coding form to avoid the quantum information of logical bits being affected by noise.

[0073] Error-correcting code: A specific encoding scheme that allows the stored information to be recovered even if some of the physical bits in the logical bits are affected and erroneous.

[0074] Addressing beam: A highly focused beam of light (spot diameter of about one micrometer) used to illuminate a single atom.

[0075] Global beam: A large spot of light used to illuminate the entire array for global control.

[0076] Logic gate: The basic logical operation unit in quantum circuits. Logic gates are also called quantum gates. Quantum gates (such as Hadamard gates and CNOT gates) change quantum states through unitary transformations.

[0077] Energy level: A relatively stable state in a quantum system. These states correspond to a series of discrete energies.

[0078] A quantum state is a state of a quantum system characterized by a set of quantum numbers. A quantum state is represented by a state vector, denoted as |ψ> (the “ket” in Dirac notation). For a single-qubit system, the quantum state can be represented as: |ψ>=α|0>+β|1>; α and β are complex numbers (probability amplitudes) satisfying |α| 2 +∣β∣ 2 =1. |0> and |1> are the ground states (computation basis).

[0079] Quantum numbers are numerical values ​​used to describe the conserved physical quantities in a quantum system, thereby expressing the quantum state of the system. Quantum numbers are a set of parameters characterizing quantum states (such as principal quantum number, angular momentum quantum number, etc.), used to describe the discrete energy levels, spin, and other properties of the system.

[0080] Quantum circuits are the basic architecture for realizing quantum computing using qubits and quantum gates. They consist of a series of quantum gates and their core lies in completing specific computational tasks through controllable quantum state evolution and entanglement operations.

[0081] Superposition: A quantum system can exist simultaneously in a linear combination of multiple ground states. For example: This represents the equal probability superposition of |0> and |1>. The superposition property of qubits enables parallelism in quantum computing; through superposition states, a quantum computer can process all possible inputs simultaneously. For example, Grover's algorithm searches a database in parallel within a superposition state.

[0082] Entanglement: Multiple qubits can form entangled states, whose states cannot be described individually. For example, Bell states. This means that when the first bit is measured to be 0, the second bit will also be instantly determined to be 0 (nonlocality). Entangled states are the foundation of quantum communication (such as quantum teleportation) and error correction.

[0083] Measurement collapse: When a quantum state |ψ> is measured, it randomly collapses to a ground state (such as |0> or |1>), with a probability determined by |α|. 2 and |β| 2 Decide.

[0084] Principal quantum number n: One of the quantum numbers representing the atomic orbital domain, describing the electron shell it occupies, its distance from the atomic nucleus, and its corresponding energy. The larger n is, the higher the electron energy and the larger the orbital radius (the farther the electron is from the nucleus). n is a positive integer.

[0085] Rydberg state: A general term for a highly excited state of an atomic or molecular system. Compared to the ground state atom, the electron cloud of an atom in a Rydberg state is several orders of magnitude larger. A Rydberg state is a special quantum state formed when electrons in atoms, molecules, or solid materials are excited to high principal quantum number orbitals (n >> 1), exhibiting significant macroscopic quantum properties. After a coherent time, an atom in a Rydberg state decays back to the ground state, resulting in a ground-state atom. Typically, a specific hyperfine level in the atomic ground state is chosen as the |0> state. This |0> state has a long lifetime (on the order of seconds) and resistance to decoherence, making it suitable for storing quantum information. Another hyperfine level in the ground state is chosen as the |1> state. These two energy levels can be coherently manipulated using microwaves or Raman lasers to form the ground-state encoding of a qubit. For example, ground-state atoms in the |1> state can be coupled to Rydberg states |r> via laser resonance; logical operations can be performed using global light and addressing light by utilizing the Rydberg blocking effect; and the result of the logical operation can be determined based on the arrangement of the |0> and |1> states of the ground-state atoms.

[0086] Optical tweezers: When a laser beam is focused onto the surface of an atom, the atom experiences forces in all three directions that point towards or away from the point of maximum laser intensity. This forces the atom to be squeezed near the area of ​​strongest or weakest laser light. This "trap"-like mechanism binds the atom to a specific space, and it can move with the focused beam. The focused beam acts like tweezers, holding the atom in place; hence, this mechanism is called "optical tweezers."

[0087] Optical tweezer arrays are a technique that uses highly focused laser beams (optical tweezers) to capture and manipulate microscopic particles (such as atoms, molecules, and nanoparticles). Their core characteristic is the formation of a programmable array structure through the spatial arrangement of multiple laser beams. They are widely used in quantum computing, precision measurement, and biomanipulation. After being highly focused by an objective lens, the laser beam can be used to confine atoms, and multiple optical tweezers can be arranged in an orderly fashion to form an optical tweezer array.

[0088] The working principle of optical tweezers arrays: Based on the interaction between lasers and microscopic particles, the capture and manipulation of atoms, molecules, or nanoparticles are achieved through precise control of the optical field. Taking "red detuned laser" (wavelength slightly larger than the atomic resonance wavelength) as an example, when the laser is focused to form a Gaussian beam, the electric field gradient will attract neutral particles (such as atoms) to the region of strongest light intensity (focal point), forming a three-dimensional potential well.

[0089] Alkali metals: Alkali metals refer to the six metallic elements belonging to Group 1 of the periodic table: lithium, sodium, potassium, rubidium, cesium, and francium. All alkali metals have one outermost electron in the s orbital.

[0090] Dipole interaction: The interaction between two electric dipoles. When two atoms are excited to the Rydberg state, the strong dipole interaction prevents neighboring atoms from being excited, forming an entangled state.

[0091] C6: A commonly used parameter for the strength of the interaction force is approximately 100 GHz / (μm) for the commonly used Rydberg state C6. 6 Magnitude.

[0092] Stark shift: refers to the displacement of atomic energy levels under the influence of an external field. A weak external electric field can cause the Stark level of a Rydberg atom to split, resulting in the mixing of energy levels with different orbital angular momentum (such as S, P, and D states) to form new hybrid states. This mixing changes the distribution of dipole moments between atoms, thereby generating repulsive interactions.

[0093] Phonons are the quantized representation of lattice vibration energy. In potential well systems, they can be divided into acoustic phonons (low frequency, reflecting the collective motion of atoms) and optical phonons (high frequency, reflecting the relative vibration of atoms).

[0094] Spatial Light Modulator (SLM): In quantum optics, SLM is used for laser wavefront manipulation, such as light field shaping in Rydberg atom confinement.

[0095] Acousto-Optic Deflector (AOD): In quantum experiments, AOD is used for the dynamic control of laser beams. In the control of Rydberg atoms, SLM modulates magic wavelength optical traps, while AOD enables rapid switching of multiple beams to collaboratively manipulate Rydberg atom arrays.

[0096] The coherence time of a neutral atom refers to the duration during which its quantum state (such as a hyperfine level or a Rydberg state) remains stable before decoherence disrupts quantum superposition.

[0097] With the development of quantum technology, the fields of quantum computing and simulation are growing at an unprecedented rate. Quantum computers can theoretically achieve exponential speedups compared to traditional digital computers for certain specific problems, such as quantum chemical simulation, optimal path finding, and large number factorization. The superiority of quantum computers stems from their utilization of quantum properties such as coherent superposition and quantum entanglement of qubits. Neutral atom quantum systems, due to their long coherence time and high scalability, are considered one of the most promising pathways to realizing quantum computing. In terms of fidelity, coherence, and manipulable quantum numbers, neutral atom quantum systems have already reached parity with other leading systems.

[0098] Figure 1a This is a schematic diagram of an optical tweezers array provided for related technologies. For example... Figure 1a As shown, in related technologies, atoms are confined within one-dimensional or two-dimensional optical tweezers arrays. In mainstream neutral atom systems, confinement light is highly focused through an objective lens to form optical tweezers, capturing and confining laser-cooled atoms. These confined atoms, arranged in a regular pattern within an optical tweezers array in a vacuum glass cavity, serve as qubits with coherence times on the order of seconds. By irradiating the atoms with manipulation and addressing light, each qubit can be operated on in parallel or independently to perform the required computation. After computation, the qubits can be read by irradiating the atoms with probe light. Depending on the quantum state of the atom, the conditions and circumstances under which the atom scatters photons also differ. The scattered photons are collected by the objective lens and projected onto a camera, forming an electron signal. By detecting the electron signal, the quantum state of the atom can be determined.

[0099] Since the interatomic forces of neutral atoms in the ground state are negligible, atoms need to be excited from the ground state to the Rydberg state (excited state) for interatomic information transfer. Compared to ground-state atoms, atoms in the Rydberg state have electron clouds that are orders of magnitude larger, thus generating sufficient interatomic dipole forces for multi-qubit operations. The strength of the interaction generally depends on the size of the electron cloud and the interatomic spacing R. The size of the electron cloud is determined by the principal quantum number n of the Rydberg state, and the strength of the interatomic interaction force is proportional to n. 11 and inversely proportional to R 6 .

[0100] Figure 1b This is a schematic diagram of a quantum computing process using neutral atoms, provided for related technologies. (Example) Figure 1bAs shown, a quantum computing process for neutral atoms in related technologies mainly includes stages such as optical tweezers array fabrication, Rydberg state excitation and quantum gate operation, and measurement and readout. The optical tweezers array fabrication stage includes, for example, a) atomic cluster fabrication; b) optical tweezers array setup; c) random loading; d) on-demand rearrangement; e) spatial light modulator (SLM) setup; and f) acousto-optic deflector (AOD) setup. The Rydberg state excitation and quantum gate operation stage includes, for example, g) initial state preparation; and h) Rydberg state excitation and logic operation, where the optical trap needs to be shut down to avoid interference from the potential trap laser on the Rydberg state excitation. The measurement and readout stage includes i) measuring and reading the atoms by irradiating them with probe light to obtain the measurement results.

[0101] Generally, optical tweezers that confine ground-state atoms exhibit a repulsive interaction with atoms in the Rydberg state; Rydberg atoms will naturally move towards areas of weaker light intensity. For example... Figure 1b In step h, to avoid the repulsion of Rydberg atoms by the optical traps, the optical traps of all atoms are usually turned off during the time the Rydberg laser is turned on; for example, this process lasts about 10 µs.

[0102] However, closing all the optical traps of the atoms during the time the Rydberg laser is turned on inevitably leads to the following two problems: 1) During the operation on the Rydberg atoms, due to the lack of confinement potential, the Rydberg atoms will gradually deviate from their original positions, causing the effective Rydberg laser power to change, resulting in a decrease in the fidelity of two-qubit and / or multi-qubit gates that depend on Rydberg interactions, thereby limiting the number of logic gates (i.e., the depth of quantum circuits); 2) During the Rydberg operation, the free movement of the atoms leads to a limitation on the coherence time of the ground state-Rydberg state interference (Ramsey).

[0103] In related technologies, in order to avoid the loss of the confinement potential of Rydberg atoms, the optical trap is continuously opened during the operation of Rydberg atoms (including activation processing and quantum manipulation); by adjusting the laser wavelength, the repulsive force of the optical trap on the Rydberg atoms is adjusted, so that the optical trap can generate confinement potentials for both Rydberg atoms and ground-state atoms.

[0104] In related technologies, such as using red-detuned optical traps, ground-state atoms experience attractive interactions, with greater light intensity resulting in a deeper potential trap, thus confining the ground-state atoms within it. However, generally, the potential energy experienced by ground-state and excited-state atoms within the optical trap is different. By adjusting the laser wavelength used to confine the atoms, the difference in confinement energy between the ground state and the Rydberg state can be gradually reduced. When these two differences are completely eliminated, the lattice wavelength is called the "magic wavelength." The optical tweezers matrix of the "magic wavelength" can eliminate the perturbation of the excited-state atoms by the optical trap.

[0105] However, the greater the red detuning of the confinement laser, the greater the laser power required to achieve the same well depth (for example, the well depth of commonly trapped atoms is about 1 mK). For instance, for rubidium-87 atoms commonly used in neutral atom quantum computing platforms, the power required to confine the ground-state atom using the magic wavelength is about seven times that required in the common wavelength band (810 nm). This means that realizing a conventional 1000-qubit platform would require laser power close to 100 W. This poses a very serious challenge to the system's heat dissipation capabilities, temperature control capabilities, and the manufacturing technology of high-power lasers.

[0106] In related technologies, for example, unlike red detuned optical traps, blue detuned optical traps exhibit repulsive interactions with atoms. The confining laser creates a potential barrier for the atoms, limiting their confinement to areas of lower laser intensity. The laser wavelengths used in blue traps typically exhibit repulsive forces on both ground-state and Rydberg-state atoms, although the barrier heights experienced by each state differ, both effectively confining the atoms. For instance, blue traps are often constructed using a hollow optical trap structure, with the light intensity at the center being zero.

[0107] However, the optical path of a blue-trap optical tweezers array is much more complex than that of a red-trap optical tweezers array, making experimental implementation more difficult. Secondly, the hollow optical center may contain a weak light intensity. Although both ground-state and Rydberg-state atoms can be confined within this center, the potential energy experienced by the ground-state and Rydberg-state atoms differs, introducing decoherence mechanisms between the ground and Rydberg states during calculations, thus affecting the depth of the quantum circuit.

[0108] In view of this, embodiments of this application provide a solution. To address the confinement problem of Rydberg state atoms in the quantum computing process of neutral atoms, embodiments of this application introduce an electrode structure into a vacuum cavity, utilizing the repulsive interaction of Rydberg energy levels under the influence of a weak external electric field to confine (trapping) Rydberg atoms at the zero electric field point.

[0109] Optionally, in order to implement the solution of the embodiments of this application, the embodiments of this application also provide an electrode structure that can generate an electrostatic field that stably binds Rydberg atoms.

[0110] Optionally, embodiments of this application also provide an atomic confinement system and a neutral atom quantum computing system, the neutral atom quantum computing system including the atomic confinement system. The atomic confinement system includes the aforementioned electrode structure and a vacuum cavity, with the electrode structure incorporated within the vacuum cavity.

[0111] Figure 2 This is a schematic diagram illustrating the composition of an atomic confinement system provided in an embodiment of this application. Figure 2 As shown in the embodiments of this application, an atomic confinement system includes: a ground-state atomic confinement unit, an excited-state atomic confinement unit, and an atomic manipulation unit.

[0112] Optionally, ground-state atom confinement units are used to construct a first type of potential well (also known as a first potential well); the first type of potential well represents a potential well that confines ground-state atoms to potential well positions.

[0113] In one example, ground-state atom confinement units are used to construct optical traps to confine ground-state atoms. The optical traps include potential well positions, which represent the positions of the confined atoms within the optical traps. Potential well positions could be, for example, positions with higher light intensity in a red-detuned optical trap or positions with lower light intensity in a blue-detuned optical trap.

[0114] In another example, the ground-state atom confinement unit is also used to construct an optical lattice to confine the ground-state atoms. The optical lattice includes potential well positions, which represent the positions of the confined atoms in the optical lattice.

[0115] In this embodiment, the potential wells used to confine ground-state atoms include optical traps and optical lattices. Optical traps are potential wells formed through the interaction of laser light with the atomic dipole moment, such as the aforementioned red-detuned and blue-detuned optical traps. Optical lattices are periodic potential well structures formed through laser interference and have become a core platform for research in cold atom physics and quantum technology. The formation mechanism of optical lattice potential wells includes: when using red-detuned (negative-detuned) laser light, atoms are confined to the antinodes of the standing wave field; blue-detuned (positive-detuned) laser light is confined to the nodes, forming a periodic potential field on the order of wavelength. Therefore, an optical trap can be understood as an example of the first potential well in this embodiment. The descriptions of optical traps in this embodiment can also be applied to optical lattices, and this embodiment will not elaborate further on the relevant content of optical lattices.

[0116] In this application, the ground-state atom confinement unit represents any device capable of generating an optical trap, and this application does not limit this. For example, possible implementations of the ground-state atom confinement unit include dipole traps, red detuned traps, blue detuned traps, optical tweezers, and magic-wavelength traps. Further details regarding the ground-state atom confinement unit will not be elaborated upon.

[0117] Furthermore, excited-state atomic confinement units are used to construct an electrostatic field. The zero-field point of the electrostatic field coincides with the position of the ground-state atom, where the electric field strength is zero. The zero-field point of the electrostatic field also coincides with the potential well position of the optical trap.

[0118] It is understandable that the potential well formed by the electrostatic field can be interpreted as a second potential well. The second potential well represents a potential well that confines excited-state atoms to the aforementioned potential well location. The second potential well is formed based on an electrostatic field, and the electric field strength at the potential well location is less than a preset threshold. The second potential well of the electrostatic field has a region where the electric field strength is less than the preset threshold, which can be used to confine excited-state atoms; an example of a region where the electric field strength is less than the preset threshold is a zero electric field point. The region where the electric field strength is less than the preset threshold coincides with the potential well location of the optical trap, ensuring that the position of the atoms remains unchanged before and after excitation.

[0119] This application provides a scheme for confining Rydberg atoms using an electrostatic field. Under the influence of a weak external electric field, the Rydberg level will undergo an energy level shift, with the shift amount being approximately -αE. 2 / 2. Where α is the polarizability of the atom; E is the electric field strength. Because the principal quantum number n of the Rydberg atom is high (usually n≥30), its polarizability α is proportional to n. 7 This significantly increases the displacement; the significant increase in displacement results in a large interatomic dipole moment; the large interatomic dipole moment results in a large repulsive force between atoms.

[0120] Furthermore, if α > 0, the external electric field will cause a repulsive potential between Rydberg atoms. The potential well formed by the electrostatic field can be understood as a potential energy field of excited-state atoms; the greater the electric field strength E of the electrostatic field, the greater this repulsive potential; the smaller the electric field strength E of the electrostatic field, the smaller this repulsive potential. Therefore, Rydberg atoms will be confined to the region of lower electric field strength in the electrostatic field, that is, the position of the minimum potential energy field of excited-state atoms. If the electrostatic field is understood as a potential well, then the potential well position of the electrostatic field corresponds to the region of minimum electric field strength; the region of minimum electric field strength is, for example, the zero electric field point.

[0121] In this application embodiment, the excited-state atom confinement unit can be any device capable of generating an electrostatic field including a zero electric field point, and this application embodiment does not impose any limitations on it. For example, this application embodiment also provides several examples of electrode structures to illustrate the implementation of the excited-state atom confinement unit, but these multiple examples of electrode structures do not constitute a limitation on the embodiments of this application.

[0122] It is understood that, in the embodiments of this application, the implementation of the excited-state atom confinement unit includes conventional devices such as power supply circuits and control circuits in addition to the electrode structure, which will not be described in detail in the embodiments of this application.

[0123] Figure 3a This is a schematic diagram of a first example of an electrode structure provided in an embodiment of this application. (See attached diagram.) Figure 3a As shown, in the first example, the electrode structure includes electrode 101 and electrode 102. The electrode structure in the first example is also referred to as the first electrode structure; electrode 101 is also referred to as the first electrode; and electrode 102 is also referred to as the second electrode.

[0124] In this example, by setting the electrode structure as in the first example, an electrostatic field can be formed to confine excited-state atoms. Electrodes 101 and 102 are positioned opposite each other. Both electrodes 101 and 102 are positive. The region between electrodes 101 and 102 includes a zero-field point.

[0125] In this example, optionally, the ends of electrodes 101 and 102 are configured as needle-like points, and the region between the needle-like ends of electrodes 101 and 102 includes a zero electric field point. Under the influence of the optical trap and the electrostatic field, the excited-state atoms are confined to the zero electric field point.

[0126] Furthermore, the ends of electrodes 101 and 102 are designed in a needle-like shape, resulting in extremely high electric field strength near the tip. The high concentration of charge at the tip leads to a significant increase in the local electric field strength. The needle-like shape of the ends of electrodes 101 and 102 also results in significant non-uniformity of the electric field strength, a larger change in the electric field gradient, and a greater confinement potential for excited-state atoms. The electric field strength decreases sharply from the tip to the surrounding space, forming a non-uniform field with a large gradient, and its equipotential lines are densely twisted at the tip.

[0127] In this example, the excited-state atom can be a Rydberg atom. Using a one-dimensional needle-tip electrode structure in conjunction with a static optical trap, a magic trap between the ground state and the Rydberg state can be constructed, achieving long-term magic confinement of Rydberg atoms and improving their coherence time. This electrode structure consists of two opposing needle-tip electrodes 101 and 102. For example, the spacing between electrodes 101 and 102 is on the order of hundreds of micrometers to millimeters. The voltage between electrodes 101 and 102 can be kept consistent, for example, U, resulting in an electric field zero point at the midpoint between electrodes 101 and 102, forming a stable confinement potential for the Rydberg atom.

[0128] In this example, a confinement optical trap for the ground-state atoms is simultaneously constructed at the zero-field location, forming a confinement potential for the ground-state atom cluster. By adjusting the position, size, and depth of the optical trap, the first confinement potential of the optical trap for the ground-state atoms and the second confinement potential of the electrostatic field and the optical trap for the Rydberg atoms can be matched. For example, the difference between the first and second confinement potentials can be lower than a required threshold. In this way, the confinement potentials experienced by the excited ground-state atoms before and after the excitation process are matched. The confinement potentials at the ground-state atoms before and after the excitation process are also called magic traps. The magic trap of the ground-state-Rydberg state reduces the atomic loss of superatoms, and the number of repeatable experiments that can be performed on Rydberg superatoms will be greatly increased. For example, in the application of Rydberg single-photon sources, this will greatly increase the single-photon generation rate.

[0129] Figure 3b This is a schematic diagram of the electrostatic field of a first example of the electrode structure provided in an embodiment of this application. (See attached diagram.) Figure 3b As shown, in the first example of the electrode structure, electrode 101 generates an electric field extending from electrode 101 to infinity, and electrode 102 generates an electric field extending from electrode 102 to infinity. Excited-state atoms are confined to a zero-field point, where an electric field gradient exists in any direction. Thus, excited-state atoms experience repulsive forces in all directions, confining them to the zero-field point. Therefore, the magnitude of the electric field gradient at the zero-field point determines the degree of confinement of the excited-state atoms by the electrostatic field; the larger the electric field gradient at the zero-field point, the greater the degree of confinement of the excited-state atoms by the electrostatic field.

[0130] In this example, when electrodes 101 and 102 are arranged symmetrically, the midpoint of electrodes 101 and 102 is the zero electric field point. When electrodes 101 and 102 are arranged asymmetrically, the zero electric field point is closer to the electrode with the smaller electric field strength among electrodes 101 and 102.

[0131] Figure 4 This is a schematic diagram of a second example of the electrode structure provided in an embodiment of this application. (See attached diagram.) Figure 4As shown, in the second example, the electrode structure includes electrode 201, electrode 202, electrode 203, and electrode 204. In this second example, the electrode structure is also referred to as the second electrode structure; electrode 201 is also referred to as the third electrode; electrode 202 is also referred to as the fourth electrode; electrode 203 is also referred to as the fifth electrode; and electrode 204 is also referred to as the sixth electrode.

[0132] In this example, by setting the electrode structure as in the second example, an electrostatic field can be formed to confine excited-state atoms. The electrode structure includes opposing electrodes 201 and 202, which have the same electric field. The electrode structure also includes opposing electrodes 203 and 204, which have the same electric field. Electrodes 201 and 204 have opposite electric field. A zero electric field point is included in the region between electrodes 201 and 202.

[0133] In this example, electrodes 201 and 202 are positive electrodes; electrodes 203 and 204 are negative electrodes. In other examples, electrodes 201 and 202 are negative electrodes; electrodes 203 and 204 are positive electrodes.

[0134] In this example, electrode 201 generates an electric field from electrode 201 to electrodes 203 and 204, and electrode 202 generates an electric field from electrode 102 to electrodes 203 and 204. Excited-state atoms are confined to a zero-field point, where an electric field gradient exists in any direction. Thus, excited-state atoms experience repulsive forces in all directions, confining them to the zero-field point. Therefore, the magnitude of the electric field gradient at the zero-field point determines the degree of confinement of the excited-state atoms by the electrostatic field; the larger the electric field gradient at the zero-field point, the greater the degree of confinement of the excited-state atoms by the electrostatic field.

[0135] In this example, since electrodes 203 and 204 are negative electrodes, the electrostatic field generated by electrodes 201 and 202 increases the electric field gradient at the zero electric field point in the direction perpendicular to electrodes 201 and 202, making the electric field gradient in all directions at the zero electric field point more uniform. This results in a more uniform degree of confinement for excited-state atoms in all directions, avoiding the problem that the degree of confinement of excited-state atoms in the direction perpendicular to electrodes 201 and 202 is lower than the degree of confinement in other directions.

[0136] For example, when electrodes 201 and 202 are arranged symmetrically, the midpoint of electrodes 201 and 202 is the zero electric field point. When electrodes 201 and 202 are arranged asymmetrically, the zero electric field point is closer to the electrode with the smaller electric field strength among electrodes 201 and 202.

[0137] In this example, optionally, the ends of electrodes 201, 202, 203, and 204 are set in the shape of needle tips. In this way, the electric field strength is extremely high near the tip, the non-uniformity of the electric field strength is significant, the electric field gradient changes more greatly, and the confinement potential energy for excited-state atoms is greater.

[0138] Figure 5a This is a schematic diagram of a third example of an electrode structure provided in an embodiment of this application. (See attached diagram.) Figure 5a As shown, in the third example, the electrode structure includes electrode 301, electrode 302, electrode 303, and electrode 304. In this third example, the electrode structure is also referred to as the third electrode structure; electrode 301 is also referred to as the seventh electrode; electrode 302 is also referred to as the eighth electrode; electrode 303 is also referred to as the ninth electrode; and electrode 304 is also referred to as the tenth electrode.

[0139] In this example, by setting the electrode structure as in the third example, an electrostatic field can be formed to confine excited-state atoms. The electrode structure includes two opposing electrode arrays. The first electrode array (also referred to as the first electrode array) includes adjacent electrodes 301 and 302. The second electrode array (also referred to as the second electrode array) includes adjacent electrodes 303 and 304. Electrodes 301 and 303 are positioned opposite each other, and electrodes 302 and 304 are positioned opposite each other. Electrodes 301 and 302 have opposite quirks, and electrodes 303 and 304 have opposite quirks. Electrodes 301 and 304 have the same quirk, and electrodes 302 and 303 have the same quirk.

[0140] In this example, electrodes 301 and 304 are positive electrodes, and electrodes 302 and 303 are negative electrodes. In other examples, electrodes 301 and 304 may be negative electrodes, and electrodes 302 and 303 may be positive electrodes.

[0141] For example, referring to the electric field of the electrode structure in the second example, when electrodes 301 and 304 are arranged symmetrically, the midpoint of electrodes 301 and 304 is the zero electric field point. When electrodes 301 and 304 are arranged asymmetrically, the zero electric field point is closer to the electrode with the smaller electric field strength among electrodes 301 and 304.

[0142] In other words, the region between the two electrodes corresponding to the positive electrode can generate an electrostatic field, including a zero-field point. When the two electrodes corresponding to the positive electrode are arranged symmetrically, the midpoint between them is the zero-field point. The two electrodes corresponding to the negative electrode are used to increase the electric field gradient in the direction perpendicular to the two electrodes corresponding to the positive electrode, making the electric field gradient in all directions at the zero-field point more balanced. In this way, the degree of confinement of excited-state atoms in any direction is more balanced.

[0143] Figure 5b This is a schematic diagram of an extended structure of a third example of the electrode structure provided in the embodiments of this application. For example... Figure 5b As shown, in an extended structure of the electrode structure in the third example, the first electrode array further includes electrode 305 (also referred to as the eleventh electrode), which is adjacent to electrode 302 and has the opposite polarity to electrode 302; the second electrode array further includes electrode 306 (also referred to as the twelfth electrode), which is adjacent to electrode 304 and has the opposite polarity to electrode 304.

[0144] In this example, electrodes 301, 304, and 305 are positive electrodes; electrodes 302, 303, and 306 are negative electrodes. Thus, a second zero-field point exists in the electrostatic field formed between electrodes 304 and 305; furthermore, this second zero-field point can be used to confine a second excited-state atom. In this way, the confinement of multiple excited-state atoms can be achieved.

[0145] Figure 5c This is a schematic diagram of another extended structure of the third example of the electrode structure provided in the embodiments of this application. (See diagram below.) Figure 5c As shown, in another extended structure of the electrode structure in the third example, both the first and second electrode arrays include multiple electrodes, with each pair of adjacent electrodes having opposite polarities. The polarities of one electrode in the first electrode array and one opposite electrode in the second electrode array are opposite.

[0146] In this example, the polarities of the electrodes in the first and second electrode arrays are misaligned. This creates a zero-field point between the positive electrodes in the first and second electrode arrays. Consequently, it allows for the confinement of multiple excited-state atoms.

[0147] In this example, the electrode structure in the third example is also referred to as a two-dimensional blade electrode structure. Combined with a one-dimensional optical tweezers array of a one-dimensional static optical trap, it can achieve ground-Rydberg magic confinement of one-dimensional atoms. One electrode in the third example is also called a blade electrode. This electrode structure consists of two rows of blade electrodes (i.e., two electrode arrays).

[0148] For example, within each row of blade-shaped electrodes, the electrode width and gap are both on the order of 10 μm. The distance between the two rows of electrodes is on the order of 100 μm. Applying voltages +U and -U to the positive (+) and negative (-) electrodes respectively creates an electric field zero at the midpoint of the misaligned positive electrode, forming a stable confinement potential for Rydberg atoms. Using a spatial light modulator (SLM), a static optical trap is generated at the electric field zero point in the diagram, forming a confinement potential for the ground-state atoms. By adjusting the position and depth of the optical trap, the first confinement potential of the optical trap for the ground-state atoms can be matched with the electrostatic field and the second confinement potential of the optical trap for the Rydberg atoms, thus forming a magic trap of ground-state and Rydberg states. In this way, the long coherence time of the ground state and the strong interaction with the Rydberg state can be utilized to realize deeper quantum circuits. Since the magic trap does not need to be turned off in quantum circuit quantum computing, the atom loss rate can be greatly reduced, solving the problem of insufficient quantum circuit depth in Rydberg quantum computing.

[0149] It is understandable that the electrode structures described above can be arranged in any one or more directions to be applied to scenarios where a larger number of atoms are constrained. For example, arranging the electrode structure of the first example perpendicular to the plane of the paper can achieve a scenario where multiple atoms are constrained in a one-dimensional array. Alternatively, arranging the electrode structure of the first example perpendicular to the plane of the paper and in the horizontal direction shown in the diagram can achieve a scenario where multiple atoms are constrained in a two-dimensional array.

[0150] Furthermore, the atomic manipulation unit is used to excite the ground-state atom to obtain the excited-state atom; the excited-state atom is confined to the zero electric field point by the optical trap and the electrostatic field.

[0151] In this embodiment, the atomic manipulation unit is further described. The atomic manipulation unit can be any device capable of exciting at least one ground-state atom from a plurality of ground-state atoms to an excited-state atom; this embodiment does not impose any limitations on this.

[0152] Optionally, the excited-state atom can be a Rydberg atom. A Rydberg state refers to a highly excited state of an atomic or molecular system. Compared to a ground-state atom, the electron cloud of an atom in a Rydberg state is several orders of magnitude larger. A Rydberg state is a special quantum state formed when electrons in atoms, molecules, or solid materials are excited to high principal quantum number orbitals (n >> 1), exhibiting significant macroscopic quantum properties. After a coherence time, an atom in a Rydberg state will decay back to its ground state.

[0153] Generally, Rydberg atoms are a common technique in quantum computing. A specific hyperfine level in the atomic ground state is typically chosen as the |0> state. This |0> state has a long lifetime (on the order of seconds) and resistance to decoherence, making it suitable for storing quantum information. Another hyperfine level in the ground state is chosen as the |1> state. These two levels can be coherently manipulated using microwaves or Raman lasers to form the ground state encoding of a qubit. For example, the ground-state atom in the |1> state can be resonantly coupled to the Rydberg state |r> using laser light; logical operations can be performed using global light and addressing light, utilizing the Rydberg blocking effect; and the result of the logical operation can be determined based on the arrangement of the |0> and |1> states of the ground-state atom.

[0154] For example, exciting ground-state atoms to Rydberg states can be achieved using laser technology. One example is two-photon excitation, which uses two laser beams of different wavelengths to excite the atoms stepwise; the first beam transitions the ground-state atom to an intermediate excited state, and the second beam further excites it to the target Rydberg state. Another example is strong-field excitation, where a strong laser partially ionizes the atoms, and the remaining electrons are trapped by the Coulomb potential to form Rydberg states with high principal quantum numbers (n≥90). The lasers used for this excitation process are also called Rydberg lasers.

[0155] In this embodiment, an excited-state atom can be understood as any atom in an excited state capable of quantum computing. For example, a Rydberg atom (also known as a Rydberg atom) can be understood as a highly excited atom; that is, a Rydberg atom can be understood as an example of an excited-state atom in this embodiment. The description of Rydberg atoms in this embodiment can be applied to any excited-state atom.

[0156] In this embodiment, a stable confinement potential can be generated for Rydberg atoms using an electrostatic field, unlike an ion trap. In an ion trap, ions are confined at the lowest potential point, making it impossible to generate a stable confinement potential solely through an electrostatic field. However, in the solution of this embodiment, Rydberg atoms are confined at a zero electric field point, allowing for the direct generation of an adjustable confinement potential through an electrostatic field. For example, the confinement potential of the Rydberg atoms can be controlled by adjusting the parameters of the electrostatic field.

[0157] In this embodiment of the application, optionally, such as in the first example of the electrode structure, an electrode can be placed in only one dimension to generate a confinement potential for Rydberg atoms. The degree of confinement of the potential (characterized by phonon frequency) is determined by the electric field gradient. Since the electrostatic divergence is zero, as long as an electric field gradient is generated in one direction at the zero electric field point, gradients will automatically be generated in the other two directions, forming a confinement potential in three directions. Phonon frequency is a core parameter in condensed matter physics describing the characteristics of lattice vibrations; phonons are quantized quasi-particles of collective lattice vibrations, and their frequencies correspond to the eigenfrequency of lattice vibrations, reflecting the stiffness of interatomic interactions; the curvature of the confinement potential (i.e., the potential well stiffness) is positively correlated with the eigenfrequency of the collective atomic vibration mode (i.e., the phonon frequency). The condition of zero electrostatic divergence essentially reflects the topological constraint of Gauss's law—electric field lines cannot be generated or terminated out of thin air. This topological property forces the gradient distribution in three-dimensional space, thereby forming a globally stable confinement potential structure for Rydberg atoms.

[0158] In this embodiment, extremely strong confinement of Rydberg atoms can be achieved, with the potential well phonon frequency being an order of magnitude higher than that of the ground-state atoms in a static optical trap. Exemplarily, in the second example of the electrode structure, the electrode structure is a two-dimensional needle-tip electrode structure, applying a voltage of 100V to the positive electrode (+) and a voltage of -100V to the negative electrode (-). The electrode spacing is approximately 100µm. With this electrode structure, an electric field zero point can be generated at the center between these electrodes, achieving confinement of the Rydberg atoms. The electric field gradient is 10⁶ V / cm. 2 The order of magnitude is [value missing]. For a Rydberg atomic energy level with n≈50, the polarizability is approximately α≈100MHz / (V / cm). 2 Calculations show that the phonon frequency corresponding to its constraint potential is approximately 1 MHz, which is an order of magnitude higher than the frequency of the ground-state atomic phonons in a static optical trap.

[0159] In this embodiment, an electrostatic field is used to generate a confinement potential for Rydberg atoms. The Stark displacement generated by the electrostatic field on the Rydberg energy level is applied to confine the Rydberg atoms.

[0160] Figure 6 This is a schematic diagram of ground-state atoms and excited-state atoms provided in embodiments of this application. Figure 6 As shown, in one example, the multiple optical traps are a 3x4 optical tweezers array; multiple electrostatic fields correspond one-to-one with the multiple optical traps; the zero electric field point of each electrostatic field coincides with the center point of each optical trap. Multiple ground-state atoms are loaded and constrained by the optical tweezers array. The multiple ground-state atoms are excited, and one or more atoms are excited to an excited state, resulting in both ground-state and Rydberg state atoms. For example, the excited state is represented by Rydberg atoms; due to the Rydberg blocking effect, some of the ground-state atoms are excited to the Rydberg state.

[0161] Furthermore, before the excitation process, the ground-state atoms are confined by the optical trap; simultaneously, since the ground-state atoms are neutral, they are not confined by the electrostatic field. After the excitation process, the ground-state atoms are confined by the optical trap but not by the electrostatic field; the excited-state atoms are simultaneously affected by both the optical trap and the electrostatic field. Thus, by adjusting the parameters of the optical trap and / or the electrostatic field, the first confinement potential can be matched with the second confinement potential. The first confinement potential represents the degree of confinement of the ground-state atoms by the optical trap, and the second confinement potential represents the degree of confinement of the excited-state atoms by the combined optical trap and the electrostatic field.

[0162] Optionally, adjusting the parameters of the optical trap can change its position and depth, thereby altering the degree of confinement of the ground-state atoms (i.e., the first confinement potential) to match the second confinement potential. Examples of optical trap parameters include optical field intensity, polarizability, scalar optical frequency shift, and Hamiltonian.

[0163] Optionally, adjusting the parameters of the electrostatic field can alter the degree of confinement of the excited-state atoms by the electrostatic field, thereby changing the combined degree of confinement of the excited-state atoms by the optical trap and the electrostatic field (i.e., the second confinement potential), so that the first confinement potential matches the second confinement potential. The parameters of the electrostatic field include electric field strength, electric field gradient, etc.

[0164] In this embodiment, by constructing an electrostatic field, the Stark effect of the electrostatic field on Rydberg atoms can be utilized to confine Rydberg atoms. Confining Rydberg atoms by generating an electrostatic field through electrodes avoids the destruction of Rydberg quantum states caused by scattering due to coupling to unstable energy levels, as is common in traditional optical potential traps (such as the confinement of Rydberg Rb atoms by a 1013nm optical trap).

[0165] In this embodiment, no complex electrode structure is required. The constraint potential can be generated simply by setting the electrode in one dimension (such as the first example of the electrode structure), thus preserving the optical intervention to the greatest extent.

[0166] In this embodiment, because the Rydberg level is extremely sensitive to an electric field, the electrostatic field can tightly bind the Rydberg atoms. The degree of confinement (e.g., phonon frequency) of the excited-state atoms by the combined optical trap and electrostatic field can be an order of magnitude higher than the degree of confinement of the ground-state atoms in a static optical trap. Thus, even if the optical trap exerts a repulsive force on the Rydberg atoms, the attractive force of the electrostatic field on the Rydberg atoms is much greater than the repulsive force of the optical trap. This ensures that the degree of confinement (i.e., the second confinement potential) of the excited-state atoms by the combined optical trap and electrostatic field is still a very large attractive force, preventing positional changes and escape phenomena of the Rydberg atoms.

[0167] Figure 7aThis is a schematic diagram illustrating the composition of a quantum computing system provided in an embodiment of this application. Figure 7a As shown, a quantum computing system includes ground-state atom confinement units, excited-state atom confinement units, and atom manipulation units. For the ground-state atom confinement units, excited-state atom confinement units, and atom manipulation units, please refer to the above description.

[0168] Optionally, the atomic operation unit is also used to perform logical operations based on excited-state atoms to obtain the results of quantum computing. The logical operation module of the atomic operation unit refers to any module that performs quantum operations; this application does not limit this. For example, the logical operations of Rydberg atoms are based on the strong interaction between highly excited-state atoms, and quantum gate operations are achieved through laser manipulation. Quantum gates, for example, are two-qubit blocking gates or three-dimensional multi-qubit gates.

[0169] In this embodiment, an electrostatic field is introduced, and based on the Stark effect of the electric field, a confinement effect is achieved on the Rydberg atoms. Simultaneously, during the logical computation process, the electrostatic field and the optical trap remain open, ensuring that the ground state and the Rydberg state reach the magic condition without introducing any additional decoherence mechanisms.

[0170] In this embodiment, the influence of the electric field on Rydberg atoms can be reduced. Because Rydberg atoms are confined to the region of minimum electric field, the electrostatic field compensates for the ambient electric field, resulting in lower electric field noise. The technical solution of this embodiment is of great significance in expanding the depth of quantum circuitry for neutral atom quantum computing.

[0171] Figure 7b This is a schematic diagram illustrating the composition of an example quantum computing system provided in an embodiment of this application. Figure 7b As shown in one example, a neutral atom quantum computing system mainly includes a terminal device, a control device, and a quantum computing and simulation system. The terminal device receives control commands from the user; the control device, based on the control commands, controls the atomic confinement device to operate, thus realizing the quantum computing process.

[0172] It should be noted that ground-state atom confinement units and excited-state atom confinement units are set in the objective lenses on both sides of the vacuum cavity. The ground-state atom confinement units are devices for generating optical traps; the excited-state atom confinement units are devices for generating electrostatic fields, such as by adding the aforementioned electrode structure into the vacuum cavity. Atom processing units, such as devices for generating global light, are used to realize the excitation processing of atoms and logical operations.

[0173] In this example, "terminal device" refers to any edge device. Terminal devices can be mobile phones, displays, tablets, wearable devices, in-vehicle devices, augmented reality (AR) / virtual reality (VR) devices, laptops, ultra-mobile personal computers (UMPCs), netbooks, personal digital assistants (PDAs), etc., and this application embodiment does not impose any limitations on this.

[0174] In this example, the control device refers to any electronic device capable of performing control functions. For example, the control device can be a hardware control and timing system. This application does not impose any limitations on this.

[0175] The following is an exemplary description of the quantum computing and simulation system in this example. The quantum computing and simulation system can be understood as an example of a quantum computing system. It is used to simulate quantum computing processes based on neutral atoms. The working sequence of the quantum computing and simulation system can be divided into the following steps: fabrication of an atomic magneto-optical trap, loading and rearranging of optical tweezers, manipulation and computation of quantum states, and readout of quantum states. The core of the quantum computing and simulation system is a vacuum cavity. This vacuum cavity, for example, is a vacuum glass cavity, maintained by a vacuum pump connected to the vacuum system to achieve an ultra-high vacuum environment. The vacuum system also includes an atomic source to provide the atomic qubits required by the system.

[0176] Furthermore, the process of preparing and cooling the atomic cluster magneto-optical trap is explained in more detail. Atoms are collected at the center of a magnetic field through laser cooling. An optical tweezers matrix is ​​generated using ground-state atomic confinement units. Since the atomic temperature is lower than the optical trap depth of the optical tweezers, they are randomly loaded into the optical tweezers. A second potential well formed by an electrostatic field is constructed using excited-state atomic confinement units. The zero-field point of the electrostatic field coincides with the potential well position of the optical tweezers matrix. In this way, the optical tweezers matrix and the electrostatic field can be simultaneously activated during atomic manipulation processes (excitation processing and logical operations, etc.). Even if the optical tweezers matrix exerts a repulsive force on the excited-state atoms, the confinement potential of the electrostatic field can still confine the excited-state atoms to the original potential well positions.

[0177] Furthermore, the process of randomly loading and rearranging optical tweezers arrays is explained in more detail. The loading status of photons is detected using a camera within the atomic manipulation unit, and then the optical tweezers are moved via a feedback system to rearrange them into the shape of the target array. For example, rearranged optical tweezers light can be emitted using a spatial light modulator (SLM); in quantum optics, SLMs are used to manipulate laser waves before emission, such as shaping the light field confined to Rydberg atoms.

[0178] Furthermore, the initial state preparation and quantum state manipulation process will be further explained. The process of exciting ground-state atoms to obtain excited-state atoms using the atomic confinement technology of this application is also referred to as the state preparation and quantum state manipulation process. For example, parallel logic gate operations can be performed on all atoms in the optical tweezers array using global light (also known as a Rydberg laser) or microwaves in the atomic manipulation unit. Initial state preparation in quantum computing specifically refers to the precise construction of the input quantum state, which is a crucial step in the quantum computing process and directly affects the reliability of subsequent operations. By focusing the addressing manipulation light at a specific array position, selected atoms can be manipulated independently. For example, the addressing manipulation light can be switched using an acousto-optic deflector (AOD); the AOD is used to achieve rapid switching between multiple beams. During quantum state manipulation, static optical tweezers light can also be emitted through the AOD to achieve confinement of ground-state atoms.

[0179] For example, in permutation and combinatorial optimization applications, the initial state preparation and quantum state manipulation process refers to the process of controlling Rydberg atoms from arbitrary unknown states or thermal equilibrium states to a specific target state. The Rydberg atoms in the target state are then eliminated to obtain an array of ground-state atoms. By reading the information of each ground-state atom, the optimization result of the permutation and combination is determined. For instance, for trillion-variable combination optimization problems in energy systems (such as power grid dispatch), quantum algorithms using Rydberg atoms can provide a globally optimal solution.

[0180] For example, some applications also include the logical operations of Rydberg atoms. For instance, cryptographic cracking problems can be solved through a series of logical operations using quantum gates (such as CNOT gates and phase gates).

[0181] Furthermore, for the process of reading out quantum states, after the calculation or simulation is completed, atomic probe light is irradiated, and based on the principle of atomic fluorescence imaging, the scattered photons are collected and imaged on a camera to read the results.

[0182] Figure 8 This is a flowchart illustrating an atomic constraint method provided in an embodiment of this application. Figure 8 As shown in the figure, this application provides an atomic constraint method, which mainly includes the following steps:

[0183] Step S810: Construct the first potential well. The first potential well represents a potential well that confines the ground-state atoms to the potential well position.

[0184] Step S820: Construct a second potential well. The second potential well represents a potential well that confines excited-state atoms to the potential well location. The second potential well is formed based on an electrostatic field. The electric field strength at the potential well location of the second potential well is less than a preset threshold.

[0185] Step S830: Load the ground-state atom. The ground-state atom is confined to the potential well position by the first potential well.

[0186] In step S840, the ground-state atom is excited to obtain an excited-state atom. The excited-state atom is confined to the potential well position by the first potential well and the second potential well.

[0187] In this embodiment, to avoid the lack of confinement potential for excited-state atoms, the first potential well is continuously opened during the manipulation of excited-state atoms (including activation processing and quantum manipulation, etc.). A second potential well is directly generated through an electrostatic field and controlled so that even when the first potential well exerts a repulsive force on the excited-state atoms, the second potential well formed by the electrostatic field can still confine them. Compared to techniques that confine excited-state atoms by adjusting the laser wavelength, this embodiment can confine them through the second potential well generated by the electrostatic field. This avoids the problems of high laser power, high heat dissipation and temperature control requirements of red detuned optical trap technology, and also avoids the decoherence effect caused by the difference in potential energy between the ground-state and excited-state atoms in blue detuned optical trap technology, thus preventing the limited quantum circuit depth. The long coherence time of the ground-state atoms and the strong interaction with the excited-state atoms can be used to deepen the quantum circuit. Since the first potential well does not need to be closed in the quantum circuit, the atom loss rate can be greatly reduced, solving the problem of insufficient quantum circuit depth for excited-state atoms in quantum computing.

[0188] In one possible implementation, constructing the second potential well includes: setting an electrode structure to form the second potential well; wherein the electrode structure includes multiple electrodes, and the multiple electrodes include a region where the electric field strength is less than a preset threshold.

[0189] In this implementation, by constructing an electrode structure, it is possible to achieve a region between multiple electrodes where the electric field strength is less than a preset threshold. This region coincides with the potential well position of the first potential well, thereby enabling the confinement of the excited atoms.

[0190] In one possible implementation, the above-described electrode structure for forming a second potential well includes: setting a first electrode structure for forming a second potential well; the first electrode structure includes a first electrode and a second electrode disposed opposite to each other, both of which are positive, and a second potential well is formed between the first electrode and the second electrode.

[0191] In this implementation, a confinement potential can be generated simply by setting the first and second electrodes in one dimension. This implementation does not require a complex electrode structure; it only requires setting the electrodes in one dimension to generate the trapping potential, thus preserving the optical intervening capability in the optical trap to the greatest extent and reducing the adverse effects of adding a second potential trap on the first potential trap.

[0192] In one possible implementation, the above-described electrode structure for forming a second potential well includes: setting a second electrode structure to form a second potential well; the second electrode structure includes opposing third and fourth electrodes, the third and fourth electrodes having the same polarity; the second electrode structure also includes opposing fifth and sixth electrodes, the fifth and sixth electrodes having the same polarity; the third and fifth electrodes having opposite polarities; wherein the second potential well is formed between the third, fourth, fifth, and sixth electrodes.

[0193] In this implementation, the second electrode structure generates an electrostatic field from the positive electrode of the four electrodes to the adjacent negative electrode. This increases the electric field gradient at the zero-field point along the line perpendicular to the line connecting the two positive electrodes, making the electric field gradient more uniform in all directions at the zero-field point. This results in a more uniform degree of confinement of excited-state atoms in any direction.

[0194] In one possible implementation, the above-described electrode structure for forming a second potential well includes: setting a third electrode structure to form a second potential well; the third electrode structure includes opposing first electrode arrays and second electrode arrays, the first electrode array including adjacent seventh and eighth electrodes, the second electrode array including adjacent ninth and tenth electrodes, the seventh and ninth electrodes being oppositely arranged, the eighth and tenth electrodes being oppositely arranged, the seventh and eighth electrodes having opposite polarities, the ninth and tenth electrodes having the same polarity, and the eighth and ninth electrodes having the same polarity; wherein, a second potential well is formed between the seventh, eighth, ninth, and tenth electrodes.

[0195] In this implementation, by setting up relative first and second electrode arrays, multiple excited-state atoms can be confined, thus making it suitable for more complex scenarios.

[0196] In one possible implementation, the method further includes: adjusting the parameters of the first potential well and / or the second potential well to match the first constraint potential with the second constraint potential; the first constraint potential represents the degree of constraint of the first potential well on the ground state atom, and the second constraint potential represents the degree of constraint of the first potential well and the second potential well on the excited state atom together.

[0197] In this implementation, because the energy levels of excited-state atoms are extremely sensitive to electric fields, the electrostatic field can tightly bind the excited-state atoms, and the confinement potential generated by the electrostatic field is an order of magnitude higher than the first confinement potential. By adjusting the parameters of the first potential well, such as controlling the position, size, and depth of the optical trap; or by adjusting the parameters of the second potential well, such as the electric field strength and electric field gradient of the electrostatic field, the first and second confinement potentials can be matched (for example, the difference between them is within a required threshold), thus forming a magic trap between the ground state and the excited state. The second confinement potential represents the combined effect of the attraction potential of the electrostatic field to the excited-state atoms and the repulsion potential of the first potential well to the excited-state atoms. Since the magic trap reduces the atomic loss of excited-state atoms, the number of repeated experiments that can be performed on excited-state atoms will be greatly increased; for example, in the application of the Rydberg single-photon source, this will greatly increase the single-photon generation rate. Furthermore, the long coherence time of ground-state atoms and the strong interaction between excited-state atoms can be used to deepen quantum circuits. For example, since the magic trap does not need to be closed in a quantum circuit, the atom loss rate can be greatly reduced, solving the problem of insufficient quantum circuit depth in Rydberg quantum computing.

[0198] In one possible implementation, the excited-state atoms mentioned above include atoms in the Rydberg state.

[0199] In this implementation, the Rydberg state refers to a highly excited state of an atomic or molecular system. Compared to the ground state atom, the electron cloud of an atom in the Rydberg state is increased by several orders of magnitude.

[0200] In one possible implementation, the region where the electric field strength is less than a preset threshold is the zero electric field point of the second potential well, where the zero electric field point represents the region in the second potential well where the electric field strength is zero.

[0201] In this implementation, the zero electric field point is an example of a region where the electric field strength is less than a preset threshold, but it does not constitute a limitation on the embodiments of this application. For example, an electrode structure can also be set to achieve a region where the electric field appears at a minimum value, which is another example of a region where the electric field strength is less than a preset threshold.

[0202] In one possible implementation, the first potential well described above includes an optical well and / or an optical lattice.

[0203] In this implementation, the optical trap is a potential well formed by the interaction of a laser with the atomic dipole moment, such as the red-detuned optical trap and the blue-detuned optical trap mentioned above. The optical lattice, a periodic potential well structure formed by laser interference, has become a core platform for research in cold atom physics and quantum technology. The optical trap and optical lattice can be understood as examples of the first potential well in the embodiments of this application. The first potential well can be any potential well that confines ground-state atoms to the potential well position; this embodiment does not impose any limitations on this.

[0204] In one possible implementation, the above method further includes performing logical operations based on excited-state atoms to obtain the results of quantum computing.

[0205] In this implementation, the logical operations can be any quantum operations, and this application does not impose any restrictions on them. For example, the logical operations of Rydberg atoms are based on the strong interactions between highly excited atoms, and quantum gate operations are achieved through laser manipulation.

[0206] Based on the same concept as the foregoing embodiments, this application also provides a prediction device with a graphical user interface.

[0207] Figure 9 This is a schematic diagram illustrating the composition of an atomic confinement device provided in an embodiment of this application. Figure 9 As shown, this application provides an atomic confinement device 900, which mainly includes:

[0208] Potential well construction module 910 is used to construct a first potential well. The first potential well represents a potential well that confines ground-state atoms to the potential well location. Also, potential well construction module 910 is used to construct a second potential well. The second potential well represents a potential well that confines excited-state atoms to the potential well location. The second potential well is formed based on an electrostatic field. The electric field strength at the potential well location of the second potential well is less than a preset threshold.

[0209] Atom manipulation module 920 is used to load ground-state atoms. The ground-state atoms are constrained at potential well positions by a first potential well. Atom manipulation module 920 is also used to excite the ground-state atoms to obtain excited-state atoms. The excited-state atoms are constrained at potential well positions by a first potential well and a second potential well.

[0210] In one possible implementation, when constructing the second potential well, the potential well construction module 910 is specifically used to: set an electrode structure to form the second potential well; wherein the electrode structure includes multiple electrodes, and the multiple electrodes include a region where the electric field strength is less than a preset threshold.

[0211] In one possible implementation, when setting the electrode structure to form the second potential well, the potential well construction module 910 is specifically used to: set the first electrode structure to form the second potential well; the first electrode structure includes a first electrode and a second electrode arranged opposite to each other, both of which are positive, and a second potential well is formed between the first electrode and the second electrode.

[0212] In one possible implementation, when setting the electrode structure to form a second potential well, the potential well construction module 910 is specifically used to: set the second electrode structure to form a second potential well; the second electrode structure includes opposing third and fourth electrodes, the third and fourth electrodes having the same polarity; the second electrode structure also includes opposing fifth and sixth electrodes, the fifth and sixth electrodes having the same polarity; the third and fifth electrodes having opposite polarities; wherein, a second potential well is formed between the third, fourth, fifth, and sixth electrodes.

[0213] In one possible implementation, when setting the electrode structure to form a second potential well, the potential well construction module 910 is specifically used to: set a third electrode structure to form a second potential well; the third electrode structure includes opposing first electrode arrays and second electrode arrays, the first electrode array includes adjacent seventh and eighth electrodes, the second electrode array includes adjacent ninth and tenth electrodes, the seventh and ninth electrodes are arranged opposite to each other, the eighth and tenth electrodes are arranged opposite to each other, the seventh and eighth electrodes have opposite polarities, the ninth and tenth electrodes have the same polarity, and the eighth and ninth electrodes have the same polarity; wherein, a second potential well is formed between the seventh, eighth, ninth, and tenth electrodes.

[0214] In one possible implementation, the aforementioned potential well construction module 910 is further configured to: adjust the parameters of the first potential well and / or the second potential well to match the first constraint potential with the second constraint potential; the first constraint potential represents the degree of constraint of the first potential well on the ground state atom, and the second constraint potential represents the degree of constraint of the first potential well and the second potential well together on the excited state atom.

[0215] In one possible implementation, the excited-state atoms mentioned above include atoms in the Rydberg state.

[0216] In one possible implementation, the region where the electric field strength is less than a preset threshold is the zero electric field point of the second potential well, where the zero electric field point represents the region in the second potential well where the electric field strength is zero.

[0217] In one possible implementation, the first potential well described above includes an optical well and / or an optical lattice.

[0218] In one possible implementation, the aforementioned atomic operation module 920 is further configured to: perform logical operations based on excited-state atoms to obtain the results of quantum computing.

[0219] The following is about... Figure 9 The implementation of the atomic confinement device 900 shown (hereinafter referred to as the device of the embodiment of this application) in terms of software and hardware needs further explanation.

[0220] As an example of a software functional unit, a module can include code running on a computing instance. A computing instance can include at least one of a physical host (computing device), a virtual machine, or a container. Furthermore, the aforementioned computing instance can be one or more. For example, a module can include code running on multiple hosts / virtual machines / containers. It should be noted that the multiple hosts / virtual machines / containers used to run the code can be distributed within the same region or in different regions. Further, the multiple hosts / virtual machines / containers used to run the code can be distributed within the same availability zone (AZ) or in different AZs, each AZ comprising one or more geographically proximate data centers. Typically, a region can include multiple AZs.

[0221] Similarly, multiple hosts / virtual machines / containers used to run this code can be distributed within the same Virtual Private Cloud (VPC) or across multiple VPCs. Typically, a VPC is set up within a region. Communication between two VPCs within the same region, as well as between VPCs in different regions, requires a communication gateway to be set up within each VPC to enable interconnection between VPCs.

[0222] As an example of a hardware functional unit, a module may include at least one computing device, such as a server. Alternatively, a module may also be a device implemented using an application-specific integrated circuit (ASIC) or a programmable logic device (PLD). The aforementioned PLD may be implemented using a complex programmable logical device (CPLD), a field-programmable gate array (FPGA), a generic array logic (GAL), or any combination thereof.

[0223] The multiple computing devices included in the module can be distributed within the same region or in different regions. Similarly, the multiple computing devices included in the module can be distributed within the same Availability Zone (AZ) or in different AZs. Likewise, the multiple computing devices included in the module can be distributed within the same Virtual Private Cloud (VPC) or multiple VPCs. These multiple computing devices can be any combination of computing devices such as servers, ASICs, PLDs, CPLDs, FPGAs, and GALs.

[0224] It should be noted that, in other embodiments, the apparatus of this application embodiment additionally provides one or more modules for performing any of the steps included in the above implementation. The steps implemented by one or more modules in the apparatus of this application embodiment can be specified as needed, and more or fewer modules can be obtained than in the embodiments of this application to implement different steps in the above method, thereby realizing all the functions of the apparatus of this application embodiment.

[0225] Figure 10 This is a schematic diagram of the structure of a computing device provided in an embodiment of this application. Figure 10 As shown in the illustration, this application also provides a computing device 1000. The computing device 1000 includes a bus 1002, a processor 1004, a memory 1006, and a communication interface 1008. The processor 1004, memory 1006, and communication interface 1008 communicate with each other via the bus 1002. The computing device 1000 can be a server, such as a central server, an edge server, or a local server in a local data center, or it can be an electronic device such as a desktop computer, laptop computer, or smartphone. It should be understood that this application does not limit the number of processors and memories in the computing device 1000.

[0226] Bus 1002 can be a Peripheral Component Interconnect (PCI) bus, a Peripheral Component Interconnect Express (PCIe) bus, an Extended Industry Standard Architecture (EISA) bus, a Unified Bus (Ubus or UB), a Compute Express Link (CXL) bus, a Cache Coherent Interconnect for Accelerators (CCIX) bus, etc. The Unified Bus is also known as the Lingqu Bus. Buses can be divided into address buses, data buses, control buses, etc. For ease of representation, Figure 10 The bus 1004 may be represented by a single line, but this does not mean that there is only one bus or one type of bus. The bus 1004 may include a path for transmitting information between various components of the computing device 1000 (e.g., memory 1006, processor 1004, communication interface 1008).

[0227] The processor 1004 may include any one or more of the following computing devices: central processing unit (CPU), graphics processing unit (GPU), microprocessor (MP) or digital signal processor (DSP), ASIC, FPGA, CPLD, NPU, SoC, offload card, accelerator card, etc.

[0228] The memory 1006 may include volatile memory, such as random access memory (RAM). The processor 1004 may also include non-volatile memory, such as read-only memory (ROM), flash memory, hard disk drive (HDD), or solid-state drive (SSD). Furthermore, the memory 1006 may also be implemented using storage class memory (SCM), phase change memory (PCM), or other types of storage media.

[0229] It is worth noting that the same type of storage medium can be configured in the same computing device to realize the function of memory 1006, or two or more types of storage media can be configured to realize the function of memory 1006. This application does not limit this.

[0230] The memory 1006 stores executable program code, and the processor 1004 executes the executable program code to implement the functions of the apparatus in the embodiments of this application, thereby implementing the methods described in the above embodiments. That is, the memory 1006 stores instructions for executing the methods described in the above embodiments.

[0231] Alternatively, the memory 1006 may store executable code, which the processor 1004 executes to implement the functions of the apparatus in the embodiments of this application, thereby implementing the methods described in the above embodiments. That is, the memory 1006 stores instructions for executing the methods described in the above embodiments.

[0232] The communication interface 1008 uses transceiver modules such as, but not limited to, network interface cards and transceivers to enable communication between the computing device 1000 and other devices or communication networks.

[0233] As one possible implementation, the computing device 1000 may also include a chip system, which includes a processor and a power supply circuit. The power supply circuit supplies power to the processor, and the processor executes the operation steps corresponding to the methods in the embodiments of this application. For simplicity, further details are omitted here. The processor can be implemented using a GPU, or it can be implemented using computing devices or AI chips such as a DPU, NPU, XPU, SoC, offloading card, or accelerator card.

[0234] As one possible implementation, the computing device 1000 may include various types of processors 1004, that is, the computing device 1000 is a heterogeneous device. For example, the computing device 1000 includes a CPU and a GPU, and at least one of the processors 1004 can execute the operation steps corresponding to the method of the embodiments of this application. For the sake of brevity, further details are omitted here.

[0235] Based on the methods in the above embodiments, this application provides a computer-readable storage medium including computer program instructions. When executed by a cluster of computing devices including at least one computing device, the computer program instructions cause the cluster of computing devices to perform the methods in the above embodiments. Exemplarily, the computer-readable storage medium can be any available medium capable of being stored in the cluster of computing devices or a data storage device such as a data center containing one or more available media. The available media can be magnetic media (e.g., floppy disks, hard disks, magnetic tapes), optical media (e.g., DVDs), or semiconductor media (e.g., solid-state drives).

[0236] Based on the methods in the above embodiments, this application provides a computer program product containing instructions. The computer program product may be software or program products containing instructions, capable of running on a computing device or stored on any available medium. When the instructions are executed by a cluster of computing devices containing at least one computing device, at least one computing device in the cluster of computing devices performs the methods in the above embodiments.

[0237] It is understood that the processor in the embodiments of this application can be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. A general-purpose processor can be a microprocessor or any conventional processor.

[0238] The method steps in the embodiments of this application can be implemented in hardware or by a processor executing software instructions. The software instructions can consist of corresponding software modules, which can be stored in random access memory (RAM), flash memory, read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), registers, hard disks, portable hard disks, CD-ROMs, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor, enabling the processor to read information from and write information to the storage medium. Of course, the storage medium can also be a component of the processor. The processor and the storage medium can reside in an ASIC.

[0239] In the above embodiments, implementation can be achieved entirely or partially through software, hardware, firmware, or any combination thereof. When implemented using software, it can be implemented entirely or partially in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of this application are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted through the computer-readable storage medium. The computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., coaxial cable, fiber optic, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that integrates one or more available media. The available medium can be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., solid-state disk (SSD)).

[0240] It is understood that the various numerical designations used in the embodiments of this application are merely for descriptive convenience and are not intended to limit the scope of the embodiments of this application.

[0241] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the protection scope of the technical solutions of the embodiments of this application.

Claims

1. An atomic confinement system, characterized in that, include: Ground-state atom confinement unit is used to construct the first potential well; the first potential well represents a potential well that confines ground-state atoms to the potential well position; An excited-state atom confinement unit is used to construct a second potential well; the second potential well represents a potential well that confines excited-state atoms to the potential well location, the second potential well is formed based on an electrostatic field, and the electric field strength of the second potential well at the potential well location is less than a preset threshold. An atomic manipulation unit is configured to load ground-state atoms such that the ground-state atoms are constrained at the potential well position by the first potential well; and to excite the ground-state atoms to obtain excited-state atoms, the excited-state atoms being constrained at the potential well position by the first potential well and the second potential well.

2. The system according to claim 1, characterized in that, The excited-state atomic confinement unit includes: An electrode structure for forming the second potential well; wherein the electrode structure includes a plurality of electrodes, and the plurality of electrodes include a region between them where the electric field strength is less than the preset threshold.

3. The system according to claim 2, characterized in that, The electrode structure includes: A first electrode structure is used to form the second potential well; the first electrode structure includes a first electrode and a second electrode disposed opposite to each other, both of which are positive electrodes, and the second potential well is formed between the first electrode and the second electrode.

4. The system according to claim 2, characterized in that, The electrode structure includes: A second electrode structure is used to form the second potential well; the second electrode structure includes opposing third and fourth electrodes, the third and fourth electrodes having the same polarity; the second electrode structure also includes opposing fifth and sixth electrodes, the fifth and sixth electrodes having the same polarity; the third and fifth electrodes having opposite polarities; wherein the second potential well is formed between the third, fourth, fifth, and sixth electrodes.

5. The system according to claim 2, characterized in that, The electrode structure includes: A third electrode structure is used to form the second potential well; the third electrode structure includes opposing first electrode arrays and second electrode arrays, the first electrode array includes adjacent seventh and eighth electrodes, the second electrode array includes adjacent ninth and tenth electrodes, the seventh and ninth electrodes are arranged opposite to each other, the eighth and tenth electrodes are arranged opposite to each other, the seventh and eighth electrodes have opposite polarities, the ninth and tenth electrodes have opposite polarities, the seventh and tenth electrodes have the same polarity, and the eighth and ninth electrodes have the same polarity; wherein, the second potential well is formed between the seventh, eighth, ninth, and tenth electrodes.

6. The system according to any one of claims 1-5, characterized in that, The system also includes: A constraint potential adjustment unit is used to adjust the parameters of the first potential well and / or the second potential well so that the first constraint potential matches the second constraint potential; the first constraint potential represents the degree of constraint of the first potential well on the ground state atom, and the second constraint potential represents the degree of constraint of the first potential well and the second potential well on the excited state atom.

7. The system according to any one of claims 1-6, characterized in that, The excited-state atoms include atoms in the Rydberg state.

8. The system according to any one of claims 1-7, characterized in that, The region where the electric field strength is less than the preset threshold is the zero electric field point of the second potential well, and the zero electric field point represents the region in the second potential well where the electric field strength is zero.

9. The system according to any one of claims 1-8, characterized in that, The first potential well includes an optical well and / or an optical lattice.

10. The system according to any one of claims 1-9, characterized in that, The atomic operation unit is also used to: perform logical operations based on the excited-state atoms to obtain the results of quantum computing.

11. An atomic constraint method, characterized in that, include: Construct the first potential well; the first potential well represents the potential well that confines the ground-state atom to the potential well position; Construct a second potential well; the second potential well represents a potential well that confines excited-state atoms to the potential well location, the second potential well is formed based on an electrostatic field, and the electric field strength of the second potential well at the potential well location is less than a preset threshold. Loading ground-state atoms; the ground-state atoms are constrained at the potential well location by the first potential well; The ground-state atoms are excited to obtain excited-state atoms; The excited-state atom is constrained at the potential well position by the first potential well and the second potential well.

12. An atomic confinement device, characterized in that, include: A potential well construction module is used to construct a first potential well, which represents a potential well that confines the ground-state atoms to the potential well position. In addition, a second potential well is constructed, which represents a potential well that confines excited-state atoms to the potential well location. The second potential well is formed based on an electrostatic field, and the electric field strength of the second potential well at the potential well location is less than a preset threshold. An atomic manipulation module is used to load ground-state atoms, which are constrained at the potential well position by the first potential well; and to excite the ground-state atoms to obtain excited-state atoms. The excited-state atom is constrained at the potential well position by the first potential well and the second potential well.

13. A quantum computing system, characterized in that, Includes the atomic confinement system as described in any one of claims 1-10; the atomic operation unit is further configured to: perform logical operations based on the excited-state atoms to obtain the results of quantum computing.

14. An electronic device, characterized in that, include: At least one memory for storing programs; At least one processor for executing the program stored in the memory; When the program stored in the memory is executed, the processor is used to execute the method as described in claim 11.

15. A computer-readable storage medium storing a computer program that, when run on a processor, causes the processor to perform the method of claim 11.

16. A computer program product, characterized in that, When the computer program product is run on a processor, the processor causes the processor to perform the method as described in claim 11.

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