Plasma source chamber, chamber module, remote plasma source and semiconductor apparatus

Abstract

The application discloses a plasma source chamber, a cavity module, a remote plasma source and a semiconductor device, and relates to the technical field of semiconductor devices. The plasma source chamber comprises a cavity, an outer surface of the cavity is provided with a protective layer, the protective layer comprises ultraviolet isolation material, the ultraviolet isolation material is used for absorbing and / or reflecting ultraviolet generated in the cavity; and a heat-conducting adhesive is arranged outside the protective layer, and the heat-conducting adhesive is used for connecting a heat sink. The protective layer is arranged on the outer surface of the cavity, and the protective layer is arranged between the cavity and the heat-conducting adhesive. Since the protective layer is provided with the ultraviolet isolation material, the ultraviolet isolation material can absorb or reflect the ultraviolet generated in the cavity, and the ultraviolet in the cavity can be cut off from radiating to the heat-conducting adhesive.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and in particular to a plasma source chamber, a cavity module, a remote plasma source, and a semiconductor device. Background Technology

[0002] In semiconductor equipment, remote plasma sources have independent plasma source chambers. These chambers are made of transparent quartz and are cooled by a heat sink surrounding them. The gap between the chamber and the heat sink is filled with thermally conductive adhesive to increase the heat dissipation area and efficiency. During the ignition process, the plasma source chamber radiates ultraviolet light while generating plasma, causing the thermally conductive adhesive to age and fail, hindering heat dissipation, and even leading to cracking and failure of the plasma source chamber.

[0003] Therefore, how to solve the problem of thermal conductive adhesive aging is a technical problem that needs to be solved by those skilled in the art. Summary of the Invention

[0004] This application discloses a plasma source chamber and a cavity module including the plasma source chamber, a remote plasma source, and a semiconductor device, which are used to solve the problem of thermal conductive adhesive aging due to the influence of ultraviolet radiation radiated from the inside of the plasma source chamber.

[0005] In a first aspect, this application provides a plasma source chamber, including a cavity, the surface of which is provided with a protective layer, the protective layer including an ultraviolet-shielding material, the ultraviolet-shielding material being used to absorb and / or reflect ultraviolet rays generated within the cavity; thermally conductive adhesive is provided outside the protective layer, the thermally conductive adhesive being used to connect a heat sink.

[0006] In the aforementioned plasma source chamber, a protective layer is provided on the surface of the chamber. The protective layer is positioned between the chamber and the thermally conductive adhesive. Since the protective layer has an ultraviolet-blocking material, the ultraviolet-blocking material can absorb or reflect the ultraviolet rays generated in the chamber, thereby blocking the ultraviolet rays in the chamber from radiating to the thermally conductive adhesive and preventing the thermally conductive adhesive from aging and failing due to ultraviolet light.

[0007] In one possible implementation, the protective layer further includes a resistance-regulating material mixed with the ultraviolet-shielding material; the resistivity of the resistance-regulating material is greater than that of the ultraviolet-shielding material, so that the resistance of the protective layer is 5MΩ to 50MΩ. By adding the resistance-regulating material as a resistance-increasing component, the overall resistance value of the protective layer is increased, and the resistance of the protective layer is controlled within the range of 5MΩ to 50MΩ. When the protective layer is within this resistance range, it can effectively prevent problems such as leakage, short circuit, or interference with the radio frequency field during ignition, significantly improving the electrical safety and reliability of the plasma source chamber during ignition and long-term operation, and extending the service life of the plasma source chamber.

[0008] In one possible implementation, the UV blocking material includes one or more of Si, carbon black, graphite, graphene, ATO, and ZAO; and / or, the resistance regulating material includes... , , One or more of the following: Si, carbon black, graphite, graphene, ATO, and ZAO have the effect of absorbing ultraviolet light, which can effectively absorb the ultraviolet radiation generated during the plasma reaction inside the cavity, prevent the thermal conductive adhesive outside the cavity from aging and failing due to ultraviolet radiation, and reduce the failure of the cavity due to excessive temperature cracking. , , It has good insulation properties, which can effectively improve the resistance of the protective layer, and... , , It also has the function of reflecting or blocking ultraviolet rays, and can be used in conjunction with ultraviolet isolation materials to reduce the protection gaps of thermal conductive adhesive and reduce the transmission of ultraviolet rays to thermal conductive adhesive.

[0009] In one possible implementation, the thermal conductivity of both the UV-shielding material and the resistance-regulating material is greater than that of the cavity; and / or, the ratio of the thermal expansion coefficient of the UV-shielding material to that of the cavity, and the ratio of the thermal expansion coefficient of the resistance-regulating material to that of the cavity, are both in the range of 0.8-1.2. The fact that the thermal conductivity of the UV-shielding material and the resistance-regulating material is greater than that of the cavity improves the overall heat dissipation capacity of the cavity, effectively transferring the heat generated inside the cavity to the thermally conductive adhesive and the heat sink, maintaining the temperature stability of the cavity. The selection of a thermal expansion coefficient ratio between 0.8 and 1.2 ensures that the protective layer matches the thermal expansion coefficient of the cavity, allowing for near-synchronous expansion and contraction. This prevents the protective layer from cracking, peeling, or failing during temperature changes, improving the structural integrity and functional stability of the protective layer during long-term use.

[0010] In one possible implementation, the mass ratio of the UV-blocking material to the resistance-regulating material is greater than or equal to 4. Since the amount of resistance-regulating material added is less than that of the UV-blocking material, its dilution effect on the UV absorption and / or reflection properties of the UV-blocking material is smaller. While the overall resistance of the protective layer increases due to the addition of the resistance-regulating material, it reduces the excessive dilution of the UV absorption and / or reflection functions of the UV-blocking material due to the addition of the resistance-regulating material, thereby improving the overall electrical and optical performance of the protective layer.

[0011] In one possible implementation, the protective layer is located on the outer surface of the cavity. This allows for direct processing in the open environment outside the cavity to attach the protective layer, reducing processing difficulty. And / or, the thickness of the protective layer is less than or equal to 200 μm. A relatively thin protective layer, at the μm level, makes it less susceptible to the ingress of air bubbles, dust, etc., significantly reducing various processing defects and increasing its adhesion to the cavity.

[0012] Secondly, this application provides a cavity module, including thermally conductive adhesive, a heat sink, and the aforementioned plasma source chamber; the thermally conductive adhesive is disposed on the outer side of the protective layer, and the heat sink is connected to the outer side of the thermally conductive adhesive. This cavity module utilizes a cavity with the aforementioned protective layer, which can block ultraviolet radiation from the cavity to the thermally conductive adhesive, preventing the thermally conductive adhesive from aging and failing due to ultraviolet light.

[0013] In one possible implementation, a thermally conductive support pad is also included. Multiple thermally conductive support pads are spaced apart within the thermally conductive adhesive, with one end of the thermally conductive support pad abutting against the heat sink and the other end abutting against the plasma source chamber. This can reduce the local gap between the plasma source chamber and the heat sink that is too large or too small due to manufacturing deviations. The thermally conductive support pad can support heat conduction between the two, making the gap between the plasma source chamber and the heat sink uniform. The thermally conductive adhesive can be uniformly coated between the two, and the direct contact between the heat sink and the plasma source chamber can be reduced, thus reducing the cracking of the plasma source chamber caused by the heat sink directly contacting the plasma source chamber.

[0014] Thirdly, this application provides a remote plasma source, including an electronic control module and a cavity module as described above, with the electronic control module connected to the cavity module. This remote plasma source utilizes a cavity with a protective layer, which can block the radiation of ultraviolet light from the thermally conductive adhesive within the cavity, thus solving the problem of aging and failure of the thermally conductive adhesive due to ultraviolet radiation.

[0015] Fourthly, this application provides a semiconductor device, including a process chamber and a remote plasma source as described above, wherein the plasma source chamber is connected to the process chamber. This semiconductor device utilizes the aforementioned plasma source with a protective layer, which can block the radiation of ultraviolet light from the thermally conductive adhesive in the chamber, thus solving the problem of aging and failure of the thermally conductive adhesive in the chamber module caused by ultraviolet radiation. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is an isometric view of the remote plasma source in the embodiments of this application; Figure 2 This is an isometric view of the cavity module in the embodiments of this application; Figure 3 This is a cross-sectional view of the cavity module in an embodiment of this application; Figure 4 for Figure 3 Enlarged view of point A; Figure 5 This is an isometric view of the plasma source chamber in an embodiment of this application.

[0018] Explanation of reference numerals in the attached figures: 1-Plasma source chamber; 11-Cavity; 111 - Air inlet; 112 - Air outlet; 12 - Protective layer; 2- Thermal conductive adhesive; 3-Radiator; 4-Remote plasma source; 41-Cavity Module; 5-Thermal conductive support pad. Detailed Implementation

[0019] In some semiconductor equipment (such as etching equipment, deposition equipment, cleaning equipment, etc.), including such Figure 1 The Remote Plasma Sources 4 (RPS) shown are highly integrated miniaturized devices capable of outputting high concentrations of free radicals and ions such as F / O / H / N, supporting various process applications in semiconductor manufacturing, including etching, atomic layer deposition (ALD), and metal oxide cleaning.

[0020] The remote plasma source 4 includes a cavity module 41 and other surrounding modules. The other modules can be electronic control modules including power supplies, circuit boards, and other components. The cavity module 41 is the place where the plasma reaction occurs. The plasma source chamber 1 is the core component of the cavity module 41 and is the place where the plasma reaction occurs. It requires extremely high airtightness and resistance to plasma corrosion.

[0021] Example 1

[0022] This embodiment provides a plasma source chamber 1. Please refer to [reference needed]. Figures 1 to 5 It includes a cavity 11, which includes an air inlet 111 and an air outlet 112. The cavity 11 is the site where the plasma reaction occurs. During the plasma reaction, ultraviolet rays are generated inside the cavity 11 and radiate outward.

[0023] The surface of the cavity 11 is provided with a protective layer 12, which includes an ultraviolet-shielding material for absorbing and / or reflecting ultraviolet rays generated inside the cavity 11. Thermally conductive adhesive 2 is applied to the outside of the protective layer 12 for connecting the heat sink 3.

[0024] In the plasma source chamber 1 described above, a protective layer 12 is provided on the surface of the chamber 11. The protective layer 12 is used to be placed between the chamber 11 and the thermally conductive adhesive 2. Since the protective layer 12 has an ultraviolet blocking material, which is a material that can absorb and / or reflect ultraviolet rays generated in the chamber 11, it can block the ultraviolet rays in the chamber 11 from radiating to the thermally conductive adhesive 2, and can prevent the thermally conductive adhesive 2 from aging and failing due to ultraviolet light.

[0025] The protective layer 12 also includes a resistance-regulating material mixed with the UV-isolating material. This resistance-regulating material has a resistivity greater than that of the UV-isolating material, thereby increasing the resistance of the protective layer 12 and reducing problems such as short circuits, leakage, or interference with radio frequency fields during the plasma reaction caused by the low resistance of the UV-isolating material alone. During processing, the UV-isolating material and the resistance-regulating material can be pre-mixed and then applied to the surface of the cavity 11 in one go, thereby forming a continuous composite coating without interfacial interfaces on the outside of the cavity 11, improving the consistency and reliability of the protective performance at various locations on the outside of the cavity 11.

[0026] It should be noted that ultraviolet (UV) shielding material refers to one or a combination of materials used to absorb and / or reflect ultraviolet rays. It can be a single material or a mixture of various materials. Resistance regulating material refers to one or a combination of materials used to adjust the resistance of the protective layer 12. It can be a single material or a mixture of various materials.

[0027] Specifically, the resistance-adjusting material is a resistance-enhancing component. By adjusting its content, dispersion state, etc., the resistance of the protective layer 12 is made to be 5MΩ to 50MΩ, that is, 5MΩ≤ the resistance R of the protective layer 12≤50MΩ, for example, R=10MΩ, 25MΩ, 30MΩ, 40MΩ, etc.

[0028] During actual ignition, charge may accumulate or a potential difference may exist outside the plasma source chamber 1. If the resistance of the protective layer 12 is too low, leakage or even short circuit may occur, damaging the plasma source chamber 1 or its peripheral equipment. By adding a resistance-adjusting material as a resistance-increasing component, the overall resistance value of the protective layer 12 can be effectively increased. Increasing the resistance of the protective layer 12 to the range of 5MΩ to 50MΩ can effectively prevent leakage, short circuit, or interference with the radio frequency field during ignition, and can also significantly improve the electrical safety and reliability of the plasma source chamber 1 during ignition and long-term operation, extending the service life of the plasma source chamber 1.

[0029] Furthermore, the protective layer 12 may be a two-component composite coating formed solely by mixing ultraviolet-shielding material and resistance-regulating material, without adding any other components that may affect ultraviolet absorption and / or reflection performance or resistance stability, thereby improving the long-term stability of the protective layer 12. It should be noted that the "two-component" designation here refers to a functional classification. All materials used to achieve ultraviolet absorption and / or reflection (which may include one or more specific materials) are considered as a whole ultraviolet-shielding material, and all materials used to achieve resistance-increasing function (which may include one or more specific materials) are considered as a resistance-regulating material. The coating formed by these two functional components is the two-component composite coating referred to in this embodiment.

[0030] Of course, in other embodiments, other components may be added to the protective layer 12 as needed, so that the protective layer 12 has multiple functions such as absorbing ultraviolet light, conducting heat, and insulating.

[0031] To facilitate processing, the protective layer 12 is disposed on the outer surface of the cavity 11, allowing for direct processing in the open environment outside the cavity 11 to adhere the protective layer 12, thus reducing processing difficulty. Specifically, the protective layer 12 can be formed on the outer surface of the cavity 11 by coating or sputtering, both of which increase the adhesion between the protective layer 12 and the outer surface of the cavity 11. Coating can be specifically spraying or dip coating; coating requires low-cost processing equipment and is easy to operate, effectively reducing the overall manufacturing cost of the plasma source chamber 1. Sputtering can specifically be magnetron sputtering; sputtering processing can embed the components of the protective layer 12 into the microstructure of the outer surface of the cavity 11, resulting in stronger bonding and better adhesion between the protective layer 12 and the cavity 11, and a more uniform and dense protective layer 12, providing a more durable ultraviolet absorption and / or reflection effect. In some embodiments, the protective layer 12 can also be disposed on the inner surface of the cavity 11.

[0032] Optionally, the UV isolation material includes one or more of Si, carbon black, graphite, graphene, ATO, and ZAO. Si, carbon black, graphite, graphene, ATO, and ZAO have UV absorption effects and can effectively absorb the UV radiation generated during the plasma reaction inside the cavity 11, preventing the thermally conductive adhesive 2 outside the cavity 11 from aging and failing due to UV radiation, and reducing the risk of the cavity 11 cracking and failing due to excessive temperature.

[0033] Optionally, the resistance regulating material includes , , One or more of them. , , It has good insulation properties, which can effectively improve the resistance of the protective layer 12, and, , , It also has the function of reflecting or blocking ultraviolet rays, and can be used in conjunction with ultraviolet isolation materials to reduce the protection gaps of thermally conductive adhesive 2 and reduce the transmission of ultraviolet rays to thermally conductive adhesive 2.

[0034] Optionally, the UV isolation material consists only of Si, which will give the cavity 11 a black or dark brown appearance, and the resistance adjustment material consists only of... At this point, to achieve the coating of protective layer 12, Si powder and... The powder is prepared in a certain proportion, for example, the mass ratio of Si powder is 80% to 100%. The powder, with a mass ratio of 20% to 0%, is dispersed in a solvent, mixed evenly, and then coated onto the outside of cavity 11. Finally, the solvent is removed by baking to obtain a protective layer 12, namely Si and Composite coating.

[0035] Cavity 11 is a transparent quartz cavity. Although quartz material has good light transmittance and chemical stability, its thermal conductivity is relatively low. During plasma operation, especially in high-power plasma operation, cavity 11 is prone to heat accumulation, leading to local temperature rise and affecting plasma stability and the lifespan of cavity 11. In this embodiment, using an ultraviolet insulating material with a thermal conductivity greater than that of cavity 11 and a resistance regulating material with a thermal conductivity greater than that of cavity 11 can improve the overall heat dissipation capacity of cavity 11, effectively conducting the heat generated inside cavity 11 to the thermally conductive adhesive 2 and the heat sink 3, maintaining the stable operating temperature of cavity 11.

[0036] In some embodiments, the coefficients of thermal expansion of both the UV-blocking material and the resistance-regulating material are close to those of the cavity 11, allowing the protective layer 12 to match the coefficient of thermal expansion of the cavity 11. This enables the protective layer 12 to expand and contract substantially synchronously, preventing cracking or peeling during temperature changes and improving the structural integrity and functional stability of the protective layer 12 during long-term use. Optionally, the cavity 11 is made of quartz material, with the ratio 'a' of the coefficients of thermal expansion of the UV-blocking material to quartz ranging from 0.8 to 1.2, such as 0.8, 1, 1.2, etc.; and the ratio 'b' of the coefficients of thermal expansion of the resistance-regulating material to quartz ranging from 0.8 to 1.2, such as 0.8, 0.9, 1, 1.2, etc.

[0037] To balance the absorption or reflection of ultraviolet rays and the resistance adjustment performance of the protective layer 12, the mass ratio of the ultraviolet blocking material to the resistance adjustment material is greater than or equal to 4. For example, the mass ratio of the ultraviolet blocking material to the resistance adjustment material is 4:1, or 5:1. In this case, during processing, the ratio of the ultraviolet blocking material to the resistance adjustment material in the protective layer 12 can be flexibly selected within the above-mentioned range according to actual requirements for resistance, thermal conductivity, and light absorption, thereby obtaining coatings with different ultraviolet absorptivity, thermal conductivity, and resistance to meet different process needs.

[0038] Since the amount of resistance regulating material added per unit mass is less than that of UV blocking material, its dilution effect on the UV absorption and / or reflection performance of UV blocking material is smaller. While the overall resistance of the protective layer 12 increases due to the addition of resistance regulating material, it can reduce the excessive dilution of the UV absorption and / or reflection function of UV blocking material due to the addition of resistance regulating material, thereby improving the overall electrical and optical performance of the protective layer 12.

[0039] To improve the continuity of the protective layer 12 outside the cavity 11, the thickness t of the protective layer 12 is less than or equal to 200 μm, i.e., t ≤ 200 μm, for example, 50 μm. At this thickness, the protective layer 12 is relatively thin, at the μm level, making it less likely for bubbles, dust, etc. to get in, which can significantly reduce various processing defects of the protective layer 12 and enhance its adhesion to the cavity 11.

[0040] Example 2

[0041] Based on the above embodiments, this embodiment provides a cavity module 41, specifically applied to a remote plasma source 4. For example... Figures 3 to 5 As shown, the cavity module 41 includes the plasma source chamber 1 in the above embodiment, and the cavity module 41 also includes thermally conductive adhesive 2 and a heat sink 3. The thermally conductive adhesive 2 is disposed on the outside of the protective layer 12 of the plasma source chamber 1, and the heat sink 3 is fixed to the outside of the thermally conductive adhesive 2.

[0042] The heat sink 3 is used for heat dissipation in the plasma source chamber 1 and can also serve as an electrode for the plasma reaction, generating extremely high voltage during the plasma reaction. Optionally, the heat sink 3 is a metal heat sink, such as a copper or aluminum heat sink. Metal heat sinks have high thermal conductivity, enabling them to quickly dissipate the heat transferred from the thermally conductive adhesive 2 to the surrounding environment or its connected cooling equipment.

[0043] The thermally conductive adhesive 2 is located between the protective layer 12 and the heat sink 3, which can better conduct the heat generated by the plasma source chamber 1 to the heat sink 3 for heat dissipation. Optionally, the main component of the thermally conductive adhesive 2 can be silicone. Optionally, the thermally conductive adhesive 2 can be a thermally conductive adhesive 2 that fills the space between the protective layer 12 and the heat sink 3. After the plasma source chamber 1 and the heat sink 3 are assembled, the thermally conductive adhesive 2 is filled between the two.

[0044] The cavity module 41 uses a cavity 11 with the protective layer 12 in the above embodiment. The protective layer 12 can block the radiation of ultraviolet light to the thermally conductive adhesive 2 in the cavity 11, and prevent the thermally conductive adhesive 2 from aging and failing due to ultraviolet light.

[0045] like Figure 4 As shown, the heat sink 3 also includes a thermally conductive support pad 5, specifically made of silicone. Multiple thermally conductive support pads 5 are spaced apart within the thermally conductive adhesive 2; in this application, "multiple" refers to two or more. One end of each thermally conductive support pad 5 abuts against the heat sink 3, and the other end abuts against the plasma source chamber 1. This reduces the possibility of excessively large or small gaps between the plasma source chamber 1 and the heat sink 3 due to manufacturing deviations. The thermally conductive support pad 5 provides thermal support between the two, ensuring a uniform gap between the plasma source chamber 1 and the heat sink 3. The thermally conductive adhesive 2 can be evenly coated between the two, reducing the direct contact between the heat sink 3 and the plasma source chamber 1, which could lead to cracking of the plasma source chamber 1.

[0046] In addition, the thermally conductive support pad 5 facilitates the filling of the thermally conductive adhesive 2. Specifically, the radiator 3 includes at least two heat dissipation parts, for example, divided into upper and lower parts. During assembly, the lower heat dissipation part is fixed first. The thermally conductive support pad 5 on the inner surface of the lower heat dissipation part plays a role in supporting and buffering the plasma source chamber 1, and forming a uniform gap between the radiator 3 and the plasma source chamber 1. Then, the upper heat dissipation part is fastened to the lower heat dissipation part and the plasma source chamber 1. The inner surface of the upper heat dissipation part is also fixed with a thermally conductive support pad 5. After fastening, a uniform gap with a distance of not less than 0.3 mm and not more than 1 mm is left between the inner wall of the radiator 3 and the outer wall of the plasma source chamber 1. Then, the adhesive is poured from the glue filling port on the radiator 3. The thermally conductive adhesive 2 is fluid before curing. After filling the gap, it overflows through the glue overflow port on the radiator 3. After the glue filling is completed, it is placed in an oven to cure, and the thermally conductive adhesive 2 is uniformly filled between the radiator 3 and the plasma source chamber 1.

[0047] To improve heat dissipation, a liquid cooling channel is also provided in the radiator 3 to enhance the cooling capacity of the radiator 3 through liquid cooling.

[0048] Example 3

[0049] Based on the above embodiments, this embodiment provides a remote plasma source 4, including an electronic control module and a cavity module 41 as described in the above embodiments. This remote plasma source 4 utilizes a cavity 11 with a protective layer 12. The protective layer 12 can block the radiation of ultraviolet light from the thermally conductive adhesive 2 within the cavity 11, thus solving the problem of aging and failure of the thermally conductive adhesive 2 caused by ultraviolet radiation.

[0050] The electronic control module includes components such as a power supply and a circuit board.

[0051] Example 4

[0052] Based on the above embodiments, this embodiment provides a semiconductor device, specifically a cleaning device, an etching device, or a deposition device. The semiconductor device includes a process chamber and a remote plasma source 4 as described in the above embodiments. The plasma source chamber 1 of the remote plasma source 4 is connected to the process chamber.

[0053] The semiconductor device uses the plasma source with protective layer 12 of the above embodiment. The protective layer 12 can block the radiation of ultraviolet thermal conductive adhesive 2 in the cavity 11, which can solve the problem of aging and failure of thermal conductive adhesive 2 in the cavity module caused by ultraviolet radiation.

[0054] The above-described preferred embodiments have further illustrated the purpose, technical solutions, and advantages of this application. It should be understood that the above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A plasma source chamber, characterized in that, Includes a cavity (11), the surface of which is provided with a protective layer (12), the protective layer (12) includes an ultraviolet blocking material, the ultraviolet blocking material is used to absorb and / or reflect ultraviolet rays generated inside the cavity (11); thermally conductive adhesive (2) is provided on the outside of the protective layer (12), the thermally conductive adhesive (2) is used to connect the heat sink (3).

2. The plasma source chamber according to claim 1, characterized in that, The protective layer (12) further includes a resistance regulating material mixed with the ultraviolet blocking material; the resistivity of the resistance regulating material is greater than that of the ultraviolet blocking material, so that the resistance of the protective layer (12) is 5MΩ to 50MΩ.

3. The plasma source chamber according to claim 2, characterized in that, The ultraviolet blocking material includes one or more of Si, carbon black, graphite, graphene, ATO, and ZAO; and / or, the resistance regulating material includes , , One or more of them.

4. The plasma source chamber according to claim 2 or 3, characterized in that, The thermal conductivity of the ultraviolet insulating material and the thermal conductivity of the resistance regulating material are both greater than the thermal conductivity of the cavity (11); and / or, the ratio of the thermal expansion coefficient of the ultraviolet insulating material to the thermal expansion coefficient of the cavity (11) and the ratio of the thermal expansion coefficient of the resistance regulating material to the thermal expansion coefficient of the cavity (11) are both in the range of 0.8-1.

2.

5. The plasma source chamber according to any one of claims 2 to 4, characterized in that, The mass ratio of the ultraviolet blocking material to the resistance regulating material is greater than or equal to 4.

6. The plasma source chamber according to any one of claims 1 to 5, characterized in that, The protective layer (12) is disposed on the outer surface of the cavity (11); and / or, the thickness of the protective layer (12) is less than or equal to 200 μm.

7. A cavity module, characterized in that, It includes thermally conductive adhesive (2), a heat sink (3) and a plasma source chamber as described in any one of claims 1 to 6; the thermally conductive adhesive (2) is disposed on the outside of the protective layer (12), and the heat sink (3) is connected to the outside of the thermally conductive adhesive (2).

8. The cavity module according to claim 7, characterized in that, It also includes thermally conductive support pads (5), a plurality of thermally conductive support pads (5) are spaced apart in the thermally conductive adhesive (2), and one end of the thermally conductive support pad (5) abuts against the heat sink (3) and the other end abuts against the plasma source chamber.

9. A remote plasma source, characterized in that, It includes an electronic control module and a cavity module as described in claim 7 or 8, wherein the electronic control module is connected to the cavity module.

10. A semiconductor device, characterized in that, It includes a process chamber and the remote plasma source as described in claim 9, wherein the plasma source chamber is connected to the process chamber.

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