Collimators, semiconductor process chambers, and semiconductor process apparatuses

Abstract

The application discloses a collimator, a semiconductor process chamber and a semiconductor process equipment, the disclosed collimator comprises a plurality of collimating rings and a plurality of partition plates, the plurality of collimating rings are coaxially arranged, and a plurality of partition plates are arranged in the annular area between two adjacent collimating rings, the plurality of partition plates in the annular area are distributed along the circumference of the collimating ring, so that a plurality of collimating channels are formed in the annular area, and the radial depth-width ratio of the collimating channels in the plurality of annular areas increases in turn from the radial inner side of the collimator to the radial outer side of the collimator, wherein the radial depth-width ratio is the ratio of the height of the collimating ring to the radial width of the collimating channel, and the radial depth-width ratio of the collimating channels in the same annular area is the same. The above scheme can solve the problem of poor deposition uniformity in the related art during the deposition process.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more particularly to a collimator, a semiconductor process chamber, and semiconductor process equipment. Background Technology

[0002] Physical vapor deposition (PVD) is a key process technology in integrated circuit manufacturing, widely used in copper interconnect dual damascene processes to deposit barrier layers and copper seed layers within vias and trenches. During sputtering, the erosion morphology and plasma distribution on the target surface cause significant differences in the radial angle of sputtered particles: the central region of the wafer is dominated by vertically incident particles, while the edge region contains a large number of large-angle obliquely incident particles. Therefore, a collimator is placed between the target and the wafer to filter out large-angle sputtered particles, thereby improving deposition uniformity.

[0003] However, even after employing collimators in related technologies, although some large-angle sputtering particles are filtered out to a certain extent, the collimation effect of sputtering particles obtained at different locations on the wafer (e.g., different radial locations) still varies considerably. (The proportion of large-angle oblique sputtering particles mixed in with the sputtering particles reaching the wafer edge is still relatively large, meaning the collimation effect of sputtering particles reaching the wafer edge is poor, while the proportion of large-angle oblique sputtering particles mixed in with the sputtering particles reaching the wafer center is relatively small, meaning the collimation effect of sputtering particles reaching the wafer center is good.) This difference in collimation effect will cause poor wafer deposition uniformity (e.g., large deviations in deposition thickness and step coverage between the wafer center and edge), thereby affecting device performance. Summary of the Invention

[0004] This invention discloses a collimator, a semiconductor process chamber, and a semiconductor process apparatus to solve the problem of poor deposition uniformity in related technologies during deposition processes.

[0005] To solve the above-mentioned technical problems, the present invention is implemented as follows: In a first aspect, this application discloses a collimator, which includes a partition plate and a plurality of collimating rings. The plurality of collimating rings are coaxially arranged, and a plurality of partition plates are provided in the annular region between two adjacent collimating rings. The plurality of partition plates in the annular region are distributed at intervals along the circumference of the collimating rings to form a plurality of collimating channels in the annular region. In the direction from the radial inner side to the radial outer side of the collimator, the radial depth-to-width ratio of the collimating channels located in the plurality of annular regions increases sequentially. The radial depth-to-width ratio is the ratio of the height of the collimating ring to the radial width of the collimating channel. The radial depth-to-width ratio of the collimating channels in the same annular region is the same.

[0006] Secondly, this application also discloses a semiconductor process chamber, which includes a cavity, a base, and the collimator described in the first aspect. The top of the cavity is an opening for placing a target material. The base is disposed in the cavity and opposite to the opening. The collimator is disposed in the cavity and is located between the base and the opening.

[0007] Thirdly, this application also discloses a semiconductor process apparatus, which includes a magnetron, a driving mechanism, and the semiconductor process chamber described in the second aspect. The magnetron and the driving mechanism are located outside the chamber, and the driving mechanism is connected to the magnetron for driving the magnetron to move above the target.

[0008] The technical solution adopted in this invention can achieve the following technical effects: The collimator disclosed in this application sets the radial depth-to-width ratio of the collimation channels located in multiple annular regions to increase sequentially from the radial inner side to the radial outer side of the collimator, and the radial depth-to-width ratio of the collimation channels within the same annular region is the same. This makes the radial depth-to-width ratio of the collimation channels at different radial positions increase sequentially from the inside to the outside. Since the particles corresponding to the middle region of the wafer are mainly vertically incident particles, the proportion of large-angle oblique particles mixed in the sputtered particles reaching the center region of the wafer is relatively small. Therefore, the depth-to-width ratio of the collimation channels located on the inner side is set to be smaller. Since the proportion of large-angle oblique particles mixed in the particles corresponding to the edge region of the wafer is larger, by increasing the radial depth-to-width ratio of the collimation channels located at the edge positions, more large-angle oblique particles can be filtered out, thereby reducing the proportion of large-angle oblique particles reaching the edge positions of the wafer. This makes the collimation effect reaching each region of the wafer surface (such as the central region and the edge region) relatively consistent, thereby solving the problem of poor deposition uniformity in related technologies and improving the performance of the device. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of the structure of the semiconductor process equipment disclosed in an embodiment of the present invention; Figure 2 This is a schematic diagram of the collimator structure disclosed in an embodiment of the present invention; Figure 3 The collimator disclosed in the embodiments of the present invention is in Figure 2 Sectional view at point AA; Figure 4 The collimator disclosed in the embodiments of the present invention is in Figure 2 Sectional view at point BB; Figure 5 This is a partially enlarged schematic diagram of the collimator disclosed in an embodiment of the present invention; Figure 6 for Figure 5 Equivalent diagram at point Z; Figure 7 for Figure 6 Cross-sectional view at YY; Figure 8 for Figure 6 Sectional view at XX; Figure 9 This is a schematic diagram of the drive mechanism and magnetron disclosed in an embodiment of the present invention; Figure 10 This is a schematic diagram of the motion region of the drive mechanism driving the magnetron according to an embodiment of the present invention; Figure 11 This is a schematic diagram illustrating the uniformity of the full target resistance when using the semiconductor process equipment disclosed in the embodiments of the present invention. Figure 12 This is a schematic diagram of the coverage process performance when using the semiconductor process equipment disclosed in the embodiments of the present invention.

[0010] Explanation of reference numerals in the attached figures: A-Target Material 100 - Mounting base ring, 110 - Overlapping protrusion, 120 - Annular groove 200 - Collimation ring, 210 - First collimation ring, 220 - Second collimation ring, 230 - Third collimation ring, 201 - Collimation channel 300 - partition plate, 400 - cavity, 500 - base, 600 - annular liner, 710 - Magnetron, 730 - Housing 800-Drive mechanism, 810-Drive motor, 820-Planetary gearbox, 821-First gear, 822-Second gear, 823-Third gear, 830-Rotating arm, 840-Counterweight. 910 - Connecting plate, 920 - Insulating ring. Detailed Implementation

[0011] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0012] The technical solutions disclosed in the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0013] Please refer to Figures 1 to 12This invention discloses a collimator, which includes a partition plate 300 and a plurality of collimation rings 200.

[0014] Multiple collimation rings 200 are coaxially arranged. Multiple partition plates 300 are provided in the annular region between two adjacent collimation rings 200 (i.e., the annular gap between two adjacent collimation rings 200). Each partition plate 300 is connected at both ends to two adjacent collimation rings 200, so that the multiple collimation rings 200 form an integral structure. All of the multiple collimation rings 200 can be circular rings.

[0015] Multiple partition plates 300 within the annular region are distributed at intervals along the circumference of the collimation ring 200 to form multiple collimation channels 201 within the annular region. The collimation channels 201 extend through the collimator along the axial direction of the collimation ring 200. Specifically, the multiple partition plates 300 within each annular region can be evenly distributed along the circumference of the collimation ring 200 to ensure that the multiple collimation channels 201 within each annular region are of the same size. Specifically, the partition plates 300 can be straight plates to ensure that the cross-sectional size of each collimation channel 201 is consistent in the direction perpendicular to the axial direction.

[0016] In the direction from the radially inner side to the radially outer side of the collimator, the radial depth-to-width ratio of the collimation channel 201 located in multiple annular regions (at least two annular regions) increases sequentially. The radial depth-to-width ratio is the ratio of the height of the collimation ring 200 to the radial width of the collimation channel 201. The radial depth-to-width ratio of the collimation channel 201 within the same annular region is the same. Please refer to [reference needed]. Figures 4 to 8 Taking the example of multiple collimation rings 200 with their upper and lower ends flush, the height of the collimation ring 200 can be denoted as H, the radial width of the collimation channel 201 as e, and the radial aspect ratio as H / e. It should be noted that the larger the aspect ratio (including radial and circumferential aspect ratios in the application), the closer the angle of the particles that can pass through is to that perpendicular to the wafer, and the better the collimation effect.

[0017] To facilitate understanding of this solution, it is necessary to describe the structure of the collimator applied in a semiconductor process chamber. The semiconductor process chamber includes a cavity 400, a base 500, and the collimator disclosed in the above embodiment. The top of the cavity 400 is an opening for placing the target material A. The base 500 is disposed within the cavity 400 and opposite the opening. The collimator is disposed within the cavity 400, and the collimator is located between the base 500 and the opening (or the target material A). The central axis of the collimator may coincide with or approximately coincide with the central axis of the base 500. Please refer to [reference needed]. Figure 1 In the direction of extension of the central axis of base 500 (e.g.) Figure 1 On the direction of extension of the midpoint line, the projection of the base 500 is located within the projection of the outermost collimation ring 200, or coincides with the projection of the outermost collimation ring 200.

[0018] The collimator disclosed in this application sets the radial depth-to-width ratio of the collimation channel 201 located in multiple annular regions to increase sequentially in the direction from the radial inner side to the radial outer side of the collimator, and the radial depth-to-width ratio of the collimation channel 201 in the same annular region is the same, so that the radial depth-to-width ratio of the collimation channel 201 at different radial positions increases sequentially from the inside to the outside. Since the particles corresponding to the central region of the wafer (i.e., the region opposite to the center region of the collimator) are mainly vertically incident particles, the proportion of large-angle oblique particles mixed in the sputtered particles reaching the central region of the wafer is relatively small. Therefore, the aspect ratio of the collimation channel 201 located on the inner side in the radial direction is set to be smaller. Since the proportion of large-angle oblique particles mixed in the particles corresponding to the edge region of the wafer (the region opposite to the edge region of the collimator) is larger, by increasing the radial aspect ratio of the collimation channel 201 located at the edge, more large-angle oblique particles can be filtered out. This can reduce the proportion of large-angle oblique particles reaching the edge of the wafer, thereby making the collimation effect of reaching various regions of the wafer surface (such as the central region and the edge region) relatively consistent. This can solve the problem of poor deposition uniformity in related technologies and improve the performance of the device.

[0019] Specifically, the heights of the multiple collimating rings 200 can all be equal, and their upper and lower ends can be aligned along the extension direction of the central axis of the collimating rings 200. Within each annular region, the upper and lower ends of the multiple partition plates 300 can also be aligned; more specifically, the partition plates 300 within the multiple annular regions are aligned at the upper ends of the multiple collimating rings 200. The distance between adjacent collimating rings 200 can decrease in the direction from the radially inner side to the radially outer side of the collimator. Since the collimating rings 200 are of equal height, a larger radial width results in a smaller radial depth-to-width ratio, and vice versa.

[0020] The collimator disclosed in this application has a relatively simple structure by setting the height of multiple collimating rings 200 to be equal and setting the ends of multiple collimating rings 200 to be flush, thereby simplifying the manufacturing process.

[0021] Of course, in another embodiment, the heights of the multiple collimation rings 200 may not be equal. When calculating the radial depth-to-width ratio of the collimation channel 201, the ratio of the height of the smaller of the two collimation rings 200 that form the collimation channel 201 to the radial width of the collimation channel 201 can be used as the radial depth-to-width ratio of the collimation channel.

[0022] To further improve the consistency of the collimation effect of the collimation channel 201 in the circumferential direction, optionally, within each collimation channel 201, the ratio of the radial width of the collimation channel 201 to the height of the collimation ring 200 is a first value (i.e., the reciprocal of the radial depth-to-width ratio), and the ratio of the average width of the same collimation channel 201 in the circumferential direction to the height of the partition plate 300 is a second value (i.e., the reciprocal of the circumferential depth-to-width ratio). The ratio of the first value to the second value can be greater than or equal to 0.9 and less than or equal to 1.1. It should be noted that the collimation channel 201 has a first end and a second end in the radial direction. Half of the sum of the width of the first end of the collimation channel 201 in the circumferential direction and the width of the second end of the collimation channel 201 in the circumferential direction can be denoted as the average width of the collimation channel 201 in the circumferential direction. The circumferential depth-to-width ratio of the collimation channel is the ratio of the height of the partition plate 300 surrounding the collimation channel 201 to the average width of the collimation channel 201 in the circumferential direction. The height of the collimation ring 200 refers to the height of the collimation ring 200 in the direction of extension of the central axis of the collimation ring 200.

[0023] Please refer to Figures 5 to 8 In a plane perpendicular to the central axis of the collimator, the projection shape of the collimation channel 201 can be approximated as a trapezoidal structure. The length of the shorter side of the trapezoidal structure closest to the center of the collimator can be denoted as c, and the length of the longer side of the trapezoidal structure furthest from the center of the collimator can be denoted as d. The distance between two adjacent collimation rings 200 (i.e., the radial width of the collimation channel 201) can be denoted as e, and the average circumferential width of the collimation channel 201 can be denoted as f, where f = (c + d) / 2. The height of the collimation ring 200 can be denoted as H, and the height of the partition plate 300 can be denoted as M. It should be noted that c, d, f, and M can be different for different annular regions, and should be adjusted according to design requirements.

[0024] Taking multiple collimation rings 200, including a first collimation ring 210, a second collimation ring 220, and a third collimation ring 230, as an example, the third collimation ring 230 surrounds the second collimation ring 220, and the second collimation ring 220 surrounds the first collimation ring 210. The radius of the first collimation ring 210 is R1, the radius of the second collimation ring 220 is R2, and the radius of the third collimation ring 230 is R3. The area enclosed by the first collimation ring 210 is circular. The first collimation ring 210 intercepts particles at the same angle in different directions, and the maximum angle at which particles can pass through the first collimation ring 210 is arctan(2R1 / H). For the collimation channel 201 between the first collimation ring 210 and the second collimation ring 220, the collimation channel 201 is approximately trapezoidal in structure. The maximum angle at which particles can pass through the collimation channel 201 in the radial direction of the collimator is arctan(e1 / H), where e1 = R2 - R1, i.e., e1 is the radial distance between the first collimation ring 210 and the second collimation ring 220. The maximum angle at which particles can pass through the collimation channel 201 in the circumferential direction of the collimator is from arctan(c1 / M1) to arctan(d1 / M1), where c1 represents the length of the shorter side of the collimation channel 201 near the center in the annular region between the first collimation ring 210 and the second collimation ring 220, and d1 represents the length of the longer side of the collimation channel 201 away from the center in the annular region between the first collimation ring 210 and the second collimation ring 220. The average maximum angle of particles passing through the collimation channel 201 in the circumferential direction of the collimator can be calculated according to arctan(f1 / M1), where f1 represents the average width of the collimation channel 201 in the circumferential direction within the annular region between the first collimation ring 210 and the second collimation ring 220. Similarly, for the collimation channel 201 between the second collimation ring 220 and the third collimation ring 230, the maximum angle through which particles can pass through the collimation channel 201 in the radial direction of the collimator is arctan(e2 / H), where e2 = R3 - R2, i.e., e2 is the radial distance between the second collimation ring 220 and the third collimation ring 230; the maximum angle through which particles can pass through the collimation channel 201 in the circumferential direction of the collimator is from arctan(c2 / M2) to arctan(d2 / M2), where c2 represents the length of the shorter side of the collimation channel 201 near the center in the annular region between the second collimation ring 220 and the third collimation ring 230, and d2 represents the length of the longer side of the collimation channel 201 away from the center in the annular region between the second collimation ring 220 and the third collimation ring 230. When the upper and lower ends of multiple collimation rings 200 are aligned, the height of the collimation rings 200 is equal, which is H. When the heights of multiple collimation rings 200 are different, H can be the height of the smaller of the two collimation rings 200 that form the collimation channel 201.

[0025] The average maximum angle of particles that can pass through the collimation channel in the circumferential direction of the collimator can be calculated according to arctan(f2 / M2), where f2 represents the average width of the collimation channel 201 in the circumferential direction within the annular region between the second collimation ring 220 and the third collimation ring 230.

[0026] In order to achieve similar collimation effects in the radial and circumferential directions within the same collimation channel 201, the collimator disclosed in this application can constrain the ratio of the radial width of the collimation channel 201 to the height of the collimation ring 200 (i.e., the first value) to the ratio of the average width of the same collimation channel 201 in the circumferential direction to the height of the partition plate 300 (i.e., the second value) within each collimation channel 201 to between 0.9 and 1.1. This makes the radial aspect ratio and circumferential aspect ratio of each collimation channel 201 similar, so that the collimation channel 201 has similar interception capabilities for particles from different directions. If the ratio of the first value to the second value is greater than 1.1, the radial collimation effect is much stronger than the circumferential collimation effect. The collimation channel 201 will allow too many particles with large angles to pass through in the circumferential direction, resulting in non-uniform collimation. Conversely, if the ratio of the first value to the second value is less than 0.9, the radial collimation effect is much weaker than the circumferential collimation effect. The collimation channel will allow too many particles with large angles to pass through in the radial direction, resulting in non-uniform collimation.

[0027] It should be noted that after determining two of the values ​​of c, d, and M, the setting range of the third value can be determined based on the ratio of the first value to the second value. In the extension direction of the central axis of the collimation ring 200, the heights of multiple partition plates 300 within the same annular region are equal, while the heights of partition plates 300 in different annular regions are different. The heights of the partition plates 300 in different annular regions can be determined based on the ratio of the first value to the second value.

[0028] Specifically, the radial depth-to-width ratio of the collimation channel 201 located between the second collimation ring 220 and the first collimation ring 210 can be greater than or equal to 0.3 and less than or equal to 0.5. The radial depth-to-width ratio of the collimation channel 201 located between the third collimation ring 230 and the second collimation ring 220 can be greater than or equal to 0.5 and less than or equal to 0.7.

[0029] The collimator disclosed in this application employs a smaller aspect ratio (0.3-0.5) in the inner collimation channel 201 to moderately filter out a small number of large-angle particles while ensuring sufficient particle flux to maintain a reasonable deposition rate in the central region. The outer collimation channel 201 employs a larger aspect ratio (0.5-0.7) to strongly filter out a large number of oblique particles inherent in the wafer edge region, thereby significantly improving the collimation effect in the edge region.

[0030] Optionally, the radius of the first collimating ring 210 can be greater than or equal to 25 mm and less than or equal to 35 mm. The radius of the second collimating ring 220 can be greater than or equal to 150 mm and less than or equal to 175 mm. The radius of the third collimating ring 230 can be greater than or equal to 250 mm and less than or equal to 300 mm.

[0031] In an optional embodiment, the collimator may further include a mounting base ring 100 and a connecting plate 910. The mounting base ring 100 and the collimating ring 200 may be coaxially arranged. The mounting base ring 100 may surround the plurality of collimating rings 200. The mounting base ring 100 may be fixedly connected to the adjacent collimating ring 200 through the connecting plate 910.

[0032] Specifically, the mounting base ring 100 can be a mounting structure for the collimator, providing a mounting base for the separator 300 and multiple collimation rings 200. The mounting base ring 100 can mate with the cavity wall or other lining components of the semiconductor process chamber to secure the entire collimator in a predetermined position within the cavity 400.

[0033] Furthermore, there can be multiple connecting plates 910, which can be located in the area between the mounting base ring 100 and the collimating ring 200, and can be distributed circumferentially around the mounting base ring 100. By connecting the mounting base ring 100 and the adjacent collimating ring 200 through multiple connecting plates 910, not only can the connection strength between the mounting base ring 100 and the adjacent collimating ring 200 be improved, but the effective working range of the collimator is also significantly expanded, so that particles sputtered from the edge region of the target material A can also be collimated. In this case, the connecting plate 910 not only serves to connect the mounting base ring 100 and the adjacent collimating ring 200, but also performs the same function as the separator plate.

[0034] In one specific embodiment, the first end of the mounting base ring 100 can be used to mate with the target material A. For example, a portion of the target material A extends into the first end of the mounting base ring 100, and a gap is reserved between the target material A and the inner surface of the mounting base ring 100 to prevent arcing between the mounting base ring 100 and the target material A. The collimation ring 200 can be entirely located within the mounting base ring 100, or at least a portion of the collimation ring 200 can extend beyond the second end of the mounting base ring 100. The first end and the second end of the mounting base ring 100 are distributed opposite to each other. The first end of the mounting base ring 100 faces the target material A, and the second end of the mounting base ring 100 faces the base 500.

[0035] With the entire collimation ring 200 located within the mounting base ring 100, the collimator structure is more compact. With at least a portion of the collimation ring 200 extending beyond the second end of the mounting base ring 100, the collimation ring 200 can form a flow-guiding structure, directing the collimated particle stream more concentratedly toward the wafer on the base 500. Furthermore, the extended portion can engage with other components within the cavity (such as forming a labyrinthine engagement with the annular liner 600), preventing particle contamination of the inner wall of the cavity 400.

[0036] To optimize the flow field distribution of particles in the collimator region, the mounting base ring 100 may optionally have a first orifice and a second orifice. The first orifice may be close to the first end of the mounting base ring 100, and the second orifice may be close to the second end of the mounting base ring 100. The orifice diameter of the first orifice may be larger than that of the second orifice.

[0037] The collimator disclosed in this application optimizes the flow field distribution of process gas in the collimator region and improves the stability of plasma (process gas ionization forms plasma, plasma bombards target A to generate particles for deposition) by setting the mounting base ring 100 so that the aperture of the first aperture segment is larger than that of the second aperture segment. Moreover, the larger first aperture segment can better fit the target A (e.g., the target A extends into the first aperture segment), the smaller second aperture segment helps to concentrate particles, and the mounting base ring 100 can form an effective connection with the annular liner 600 to jointly prevent particles from sputtering onto the inner wall of the cavity 400.

[0038] To facilitate the installation of the collimator and the cavity 400, the outer wall of the mounting base ring 100 may optionally have an overlapping protrusion 110, which can be used to overlap and cooperate with the cavity wall of the semiconductor process chamber, thereby making the installation of the collimator and the cavity 400 more convenient.

[0039] Of course, the mounting base ring 100 can also be fixed to the cavity wall by means of bolt connection, welding or other methods. This application embodiment does not impose specific restrictions on the installation method of the mounting base ring 100 and the cavity 400.

[0040] Optionally, the outer wall of the mounting base ring 100 may have an annular groove 120. The annular groove 120 may be located at the second end of the mounting base ring 100. The annular groove 120 may be used to cooperate with the annular liner 600 of the semiconductor process chamber, so that the annular groove 120 and the annular liner 600 can form a "maze" path, thereby effectively blocking sputtered particles from diffusing through tiny gaps to the inner wall of the chamber 400, and at the same time preventing contaminants near the chamber wall from entering the process area, thus playing a dual protection role.

[0041] To reduce the risk of particulate contamination within the cavity 400, the collimator can optionally be an integrated structure. Compared to a split structure, an integrated collimator avoids the generation of particles during assembly, thereby preventing particles generated during assembly from being introduced into the cavity 400, effectively reducing the risk of particulate contamination within the cavity 400.

[0042] This application also discloses a semiconductor process chamber, which includes a cavity 400, a base 500, and a collimator disclosed in the above embodiments. The top of the cavity 400 is an opening for placing a target A. The target A and the top opening of the cavity 400 can be connected by an insulating ring 920, which serves as an insulator and can be a ceramic ring. The base 500 is disposed within the cavity 400 and faces the opening. The collimator is disposed within the cavity 400 and is located between the base 500 and the opening. Specifically, the central axis of the collimating ring 200 can coincide with or approximately coincide with the central axis of the base 500.

[0043] The semiconductor process chamber disclosed in this application, by setting the collimator disclosed in the above embodiments, can make the collimation effect of reaching each region (such as the central region and the edge region) on the wafer surface relatively consistent, thereby solving the problem of poor deposition uniformity in related technologies and improving the performance of the device.

[0044] Optionally, the semiconductor process chamber may further include an annular liner 600, which may be disposed within the chamber 400. The annular liner 600 may be used to protect the inner wall of the chamber 400. The first end of the mounting base ring 100 may be used to mate with the target material A. The outer wall of the mounting base ring 100 may have an annular groove 120, which may be located at the second end of the mounting base ring 100. One end of the annular liner 600 may surround the annular groove 120, so that the annular groove 120 and the annular liner 600 can form a "maze" path, thereby effectively blocking sputtered particles from diffusing through tiny gaps to the inner wall of the chamber 400, and also preventing contaminants near the chamber wall from entering the process area, thus providing dual protection.

[0045] This application also discloses a semiconductor process apparatus, which includes a magnetron 710, a drive mechanism 800, and the semiconductor process chamber disclosed in the above embodiments. The magnetron 710 and the drive mechanism 800 are located outside the chamber 400. The drive mechanism 800 is connected to the magnetron 710 and is used to drive the magnetron 710 to move above the target material A. The semiconductor process apparatus may also include a housing 730, which can be connected to the target material A and forms a receiving space. The magnetron 710 is located within the receiving space, and the drive mechanism 800 is disposed in the housing 730.

[0046] For details, please refer to Figure 10 The driving mechanism 800 drives the magnetron 710 in a movement area that can be divided into an inner circle (annular region between r1 and r2), a middle circle (annular region between r2 and r3), and an outer circle (region outside r3). ​​When the magnetron 710 moves to the inner circle, most of the deposited particles will fall on the corresponding inner circle position on the wafer; when it moves to the outer circle, most of the deposited particles will fall on the corresponding outer circle position on the wafer. After determining the collimation effect of the collimator and the thickness distribution of the film layer to be deposited on the wafer, the ratio of the time the magnetron 710 moves in the inner, middle, and outer circles can be determined. The film layer thickness is usually thinner in the outer circle, so the magnetron 710 can be controlled to pass through the outer circle slowly, allowing it to stay in that region for a longer time and deposit a thicker film layer. The film layer thickness is usually thicker in the inner circle, so the magnetron 710 can be controlled to pass through the inner circle quickly to reduce the deposition thickness. In this way, the uniformity of the film layer thickness across the entire wafer can be adjusted.

[0047] Specifically, the speed ratio of the outer, middle, and inner rings of the magnetron 710 can be (6~8):(7~9):(9~10). In the specific process, by collecting uniformity values ​​across the entire process interval, the rotational speed at each stage can be precisely controlled to ensure that the uniformity meets requirements throughout the maintenance cycle. Using the semiconductor process equipment disclosed in the embodiments of this application, the resistivity uniformity of the entire target (2300 kWh) can meet 6% (please refer to...). Figure 11 ),from Figure 12 It can be seen that the bottom coverage of the vias or trenches is as high as 85%, indicating that the collimator can effectively guide particles to the bottom of the high aspect ratio vias or trenches. The normalized value of the opening is 1.18, indicating that the film deposition at the opening is slightly greater than the baseline. There is no problem of premature "sealing" at the top, which is beneficial to the subsequent metal filling process.

[0048] Please refer to Figure 9To enable the magnetron 710 to move within its inner, middle, and outer rings, the drive mechanism 800 may optionally include a drive motor 810, a planetary gearbox 820, and a rotating arm 830. The drive mechanism 800 drives the rotating arm 830 to revolve around the sun while simultaneously causing it to rotate on its own axis. Specifically, the planetary gearbox 820 may include a gearbox housing, a first gear 821, a second gear 822, and a third gear 823, all of which are housed within the gearbox housing. The first gear 821 is fixed to the housing 730 and does not rotate relative to the housing 730. The first gear 821 meshes with the second gear 822, and the second gear 822 meshes with the third gear 823. The rotating arm 830 is connected to the third gear 823. The magnetron 710 is mounted on the rotating arm 830, allowing it to revolve and rotate with the rotating arm 830. A counterweight 840 can also be installed on the rotating arm 830. The input shaft of the drive motor 810 can be connected to the gearbox housing. While the drive motor 810 drives the gearbox housing to revolve around the first axis, the third gear 823 will drive the rotating arm 830 and the magnetron 710 to rotate. The first axis can coincide with or approximately coincide with the central axis of the collimation ring 200. By adjusting the distance between the first gear 821, the second gear 822, and the third gear 823, the distance between the center line of the magnetron 710 and the third gear 823, and the gear ratio, the unique motion trajectory of the magnetron 710 can be determined (e.g., ...). Figure 10 (The motion trajectory shown). In the design, the dimensions of r1, r2, and r3 can be close to the dimensions of the collimator's R1, R2, and R3, respectively. For example, r1 / R1, r2 / R2, and r3 / R3 can all be approximately 1 to 1.1.

[0049] The above embodiments of the present invention focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0050] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.

Claims

1. A collimator, characterized in that, It includes a separator (300) and multiple collimation rings (200). Multiple collimation rings (200) are coaxially arranged, and multiple partition plates (300) are provided in the annular region between two adjacent collimation rings (200). The multiple partition plates (300) in the annular region are distributed circumferentially at intervals along the collimation rings (200) to form multiple collimation channels (201) in the annular region. In the direction from the radial inner side to the radial outer side of the collimator, the radial depth-to-width ratio of the collimation channels (201) located in the multiple annular regions increases sequentially. The radial depth-to-width ratio is the ratio of the height of the collimation ring (200) to the radial width of the collimation channel (201). The radial depth-to-width ratio of the collimation channels (201) in the same annular region is the same.

2. The collimator according to claim 1, characterized in that, In the direction of extension of the central axis of the collimating ring (200), the upper and lower ends of the plurality of collimating rings (200) are flush, and in the direction from the radial inner side to the radial outer side of the collimator, the distance between two adjacent collimating rings (200) decreases.

3. The collimator according to claim 2, characterized in that, Within each of the collimation channels (201), the ratio of the radial width of the collimation channel (201) to the height of the collimation ring (200) is a first value, and the ratio of the average width of the same collimation channel (201) in the circumferential direction to the height of the partition plate (300) is a second value. The ratio of the first value to the second value is greater than or equal to 0.9 and less than or equal to 1.

1.

4. The collimator according to claim 3, characterized in that, The plurality of collimation rings (200) include a first collimation ring (210), a second collimation ring (220) and a third collimation ring (230) arranged concentrically from the inside to the outside. The radial depth-to-width ratio of the collimation channel (201) located between the second collimation ring (220) and the first collimation ring (210) is greater than or equal to 0.3 and less than or equal to 0.5; The radial depth-to-width ratio of the collimation channel (201) located between the third collimation ring (230) and the second collimation ring (220) is greater than or equal to 0.5 and less than or equal to 0.

7.

5. The collimator according to claim 4, characterized in that, The radius of the first collimation ring (210) is greater than or equal to 25 mm and less than or equal to 35 mm, the radius of the second collimation ring (220) is greater than or equal to 150 mm and less than or equal to 175 mm, and the radius of the third collimation ring (230) is greater than or equal to 250 mm and less than or equal to 300 mm.

6. The collimator according to claim 1, characterized in that, The collimator further includes a mounting base ring (100) and a connecting plate (910). The mounting base ring (100) is coaxially arranged with the collimation ring (200). The mounting base ring (100) surrounds the plurality of collimation rings (200). The mounting base ring (100) is fixedly connected to the adjacent collimation ring (200) through the connecting plate (910).

7. The collimator according to claim 6, characterized in that, There are multiple connecting plates (910), which are located in the area between the mounting base ring (100) and the collimation ring (200) and are distributed at intervals along the circumference of the mounting base ring (100).

8. The collimator according to claim 6, characterized in that, The first end of the mounting base ring (100) is used to cooperate with the target material (A). The collimation ring (200) is located inside the mounting base ring (100), or at least a portion of the structure of the collimation ring (200) extends beyond the second end of the mounting base ring (100). The first end of the mounting base ring (100) and the second end of the mounting base ring (100) are distributed opposite to each other.

9. The collimator according to claim 8, characterized in that, The mounting base ring (100) has a first hole segment and a second hole segment. The first hole segment is close to a first end of the mounting base ring (100), and the second hole segment is close to a second end of the mounting base ring (100). The diameter of the first hole segment is larger than the diameter of the second hole segment.

10. The collimator according to claim 6, characterized in that, The outer wall of the mounting base ring (100) has an overlapping protrusion (110) for overlapping and engaging with the cavity wall of the semiconductor process chamber; and / or, The outer wall of the mounting base ring (100) has an annular groove (120) located at the second end of the mounting base ring (100), and the annular groove (120) is used to cooperate with the annular liner (600) of the semiconductor process chamber.

11. The collimator according to any one of claims 1 to 10, characterized in that, The collimator is an integral structure.

12. A semiconductor process chamber, characterized in that, The device includes a cavity (400), a base (500), and a collimator as described in any one of claims 1 to 11. The top of the cavity (400) is an opening for placing a target (A). The base (500) is disposed inside the cavity (400) and opposite to the opening. The collimator is disposed inside the cavity (400) and is located between the base (500) and the opening.

13. The semiconductor process chamber according to claim 12, characterized in that, The semiconductor process chamber also includes an annular liner (600), which is disposed inside the cavity (400) to protect the inner wall of the cavity (400). The first end of the mounting base ring (100) is used to cooperate with the target material (A). The outer wall of the mounting base ring (100) has an annular groove (120), which is located at the second end of the mounting base ring (100). One end of the annular liner (600) surrounds the annular groove (120).

14. A semiconductor process apparatus, characterized in that, The device includes a magnetron (710), a drive mechanism (800), and a semiconductor process chamber as described in claim 12 or 13, wherein the magnetron (710) and the drive mechanism (800) are located outside the chamber (400), and the drive mechanism (800) is connected to the magnetron (710) for driving the magnetron (710) to move above the target (A).

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