High frequency / low frequency circuit split multi-band wide array sip subarray module antenna
Patent Information
- Application Number
- CN202610891843.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-06-18
- Publication Date
- 2026-10-27
AI Technical Summary
[0009]本发明的目的在于,针对现有相控阵天线技术普遍存在的体积庞大、剖面较高、集成度低、射频链路损耗大、散热效率不佳、多模块组装成本高昂且难以与曲面载体共形等一系列技术瓶颈,提出在多频段、高集成度的SIP天线模组中,有效隔离高频射频信号与低频数字控制信号的相互干扰,同时优化不同功能材料的性能与成本匹配,并提供一种便于扩展的模块化组装方案:一种基于“高频/低频电路分离”理念的系统级封装(SIP)子阵模组天线,本方案通过从传统的“混合一片式”平面集成,向“功能解耦、三维堆叠、垂直互连”的立体化SIP架构进行根本性变革,旨在系统性解决射频性能、研制成本、热管理、可靠性与可制造性之间的固有矛盾
[0036]超薄高集成:三维堆叠,厚度毫米级,曲面共形,集成天线阵列、TR组件、波束控制电路、DC/DC电源、散热等。
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Abstract
Description
Technical Field
[0001] This invention relates to the fields of phased array antenna technology, radio frequency microwave front-end, system-in-package (SIP) and high-density integration technology. Specifically, it relates to a phased array antenna with a high-frequency / low-frequency circuit separation design, covering multiple frequency bands including L, S, C, X, Ku, and Ka, with an array size that can be flexibly expanded between 4×4 and 64×64, an array surface thickness of only a few millimeters, and integrating an antenna array layer, radio frequency circuit layer, wave control power supply layer, and heat dissipation enhancement layer within a single package. Background Technology
[0002] Multi-band broadband phased array antenna elements and phased array antennas are crucial components of modern radar and communication systems. Phased array antennas, by independently controlling the amplitude and phase of each radiating element, enable rapid beam scanning, multi-beamforming, and spatial signal processing, thus holding a key position in modern radar, communication, and electronic countermeasures systems. Specifically, a phased array antenna is a multi-element antenna system that achieves rapid, flexible, and inertial-free electronic scanning of the beam in space by precisely adjusting the amplitude / phase distribution of each radiating element through a beam control system. A multi-band broadband array refers to a multi-element array antenna that, on a single physical aperture, uses ultra-wideband radiating elements or a nested multi-band common-aperture layout to simultaneously cover multiple discrete frequency bands or a relatively wide continuous frequency band. It has a higher number of elements and higher resolution. High resolution: finer angular resolution capability. More elements: provides more degrees of freedom for beamforming and interference suppression. SIP subarray modules: this is a key enabling technology for achieving "wide arrays." SIP (System-in-Package): This technology integrates multiple chips with different processes and functions (such as power amplifiers, low-noise amplifiers, phase shifters, control chips, passive components, serial ports, etc.) into a single package, forming a complete functional subsystem. Subarray Module: A large phased array is divided into multiple standardized, fully functional subarray modules. Each SIP subarray module contains dozens of radiating elements and their corresponding complete TR channels. High-Frequency Circuits: Typically microwave / millimeter-wave frequency radio frequency circuits, responsible for transmitting, receiving, phase-shifting, and amplifying high-frequency signals. They have short wavelengths and small circuit sizes, but are extremely sensitive to transmission loss, signal crosstalk, and heat dissipation. Low-Frequency Circuits: These typically refer to local oscillator, control, power management, and digital signal processing circuits. These circuits operate at lower frequencies and are an indispensable part of the phased array antenna system. Electromagnetic Compatibility and Isolation: Ensuring that high-frequency, high-power signals do not interfere with sensitive low-frequency control circuits within a very small space is a significant challenge, requiring meticulous electromagnetic shielding and grounding design within the SIP. High-density integration and heat dissipation contradiction: The power density per unit area is extremely high, making heat dissipation design crucial for system reliability. Advanced thermal management technologies such as embedded microfluidics and high thermal conductivity materials are required. Design and process complexity: Involving multi-physics (electromagnetic, thermal, stress) co-simulation, heterogeneous integration processes, and high-precision testing, the technical barriers and costs are extremely high. Cost: Early-stage R&D and NRE (non-recurring engineering costs) for SIP processes are very high, making mass production suitable for cost amortization. Next-generation communication: 6G space-ground converged network: Satellite payloads and ground gateway stations need to support broadband communication across multiple frequency bands (such as L / Ku / Ka bands), making this SIP subarray module architecture an ideal choice. Millimeter-wave 5G / 6G base stations: Massive MIMO antennas require highly integrated, high-performance subarray modules. Advanced multi-functional radar system: A single radar system simultaneously performs search, tracking, identification, and communication functions, requiring multi-band operation capabilities.The evolution of automotive millimeter-wave radar towards 4D imaging radar requires higher precision and more channels, and SiP subarrays represent a direction for improving integration. High-frequency / low-frequency circuit-separated multi-band wide-array SiP subarray module antennas represent the forefront of phased array technology towards higher frequency bands, wider bandwidth, larger scale, higher integration, and greater intelligence. Through architectural innovation (high-low frequency separation) and SiP integration technology innovation, it attempts to achieve the optimal balance between performance, thermal management, size, and manufacturability, making it a key enabling technology to meet the needs of future high-end military, aerospace, and civilian communication systems.
[0003] Broadband and multi-band phased array antennas can support wider signal bandwidth and more diverse frequency band reuse, making them an important research direction in the current antenna field. The realization of broadband phased array antennas relies on two core elements: first, antenna elements with wide bandwidth, low mutual coupling, and stable radiation patterns; and second, matching broadband RF microwave circuits (such as feed networks, phase shifters, and TR components). By arranging multiple broadband elements in a specific topology and coordinating their control, a broadband phased array can be constructed, achieving wide-angle scanning and frequency-independent beam performance. Traditional phased arrays suffer from low integration, thick profiles, high high-frequency loss, high-low frequency crosstalk, poor heat dissipation, difficulty in expansion, and high cost; traditional SiP (System-in-Pack) antennas have mixed traces, resulting in severe interference and thermal coupling, complex manufacturing processes, and extremely high costs. Common broadband antenna element forms include Vivaldi tapered slot antennas, helical antennas, and log-periodic antennas. Among these, Vivaldi antennas have attracted much attention in broadband arrays due to their simple structure, wide bandwidth, and ease of integration. However, as the frequency increases and the spacing between elements decreases, the mutual coupling effect between elements is significantly enhanced, leading to problems such as pattern distortion, scanning dead zone and impedance mismatch. Especially when multiple frequency bands are working simultaneously, the crosstalk between different frequency bands further exacerbates the performance degradation, which poses a severe challenge to array design and integration.
[0004] At the engineering implementation level, traditional phased array antennas typically employ discrete components, board-level assembly, and external antenna architectures. When facing multi-band, large-scale, low-profile, and highly integrated applications, they suffer from the following bottlenecks: 1) Low integration and heavy cross-section: The antenna, TR component, beam control circuit, power module and other components are laid out separately, relying on multi-layer PCB and connector stacking. The array thickness is large, often reaching the centimeter level, which is difficult to meet the requirements of airborne, missile-borne and other scenarios with strict requirements for ultra-thin installation space. 2) High frequency loss and poor signal integrity: High frequency signal links are long and have many connection links. The loss of connectors and transmission lines is large, and the transmission loss is significant, which affects the overall efficiency of the system and the receiving sensitivity, especially in the high frequency band (such as Ka band). 3) Poor electromagnetic compatibility: When multiple frequency band signals coexist, there are serious problems such as crosstalk between frequency bands, high-low frequency coupling, high-low frequency signal interference, power supply noise coupling, and power supply noise injection, which lead to a decrease in the system signal-to-noise ratio and reduced stability. 4) Difficulty in implementing large-scale arrays: When the array size is expanded to 64×64, the wiring complexity increases sharply, signal synchronization becomes difficult, the voltage drop of the power supply network is significant, and the heat dissipation path is not smooth, which restricts the improvement of array size and performance. 5) Severe power supply noise interference: The DC / DC power module is arranged on the same board as the RF and digital circuits. Switching noise can easily enter the sensitive RF link through common ground coupling, which degrades the dynamic range of the system. 6) Poor manufacturing consistency and high cost: Multi-process assembly introduces large process deviations, making it difficult to guarantee unit consistency and overall performance, and is not conducive to mass production and equipment promotion and application.
[0005] To overcome these limitations, the industry has begun exploring high-density integration solutions based on System-in-Package (SIP). SIP technology, by vertically stacking and densely interconnecting heterogeneous chips and passive components such as antennas, RF front-ends, digital controls, and power management devices in three-dimensional space, can significantly shorten signal paths, reduce losses, decrease size, and improve electromagnetic shielding and heat dissipation performance. Especially in high-frequency applications such as the Ka-band, atmospheric attenuation and noise are more significant, necessitating the use of SIP integration to achieve high-gain, low-loss, and high-stability antenna arrays to support the demands of future high-speed communications, high-resolution radar, and other systems.
[0006] Traditional SIP phased array antennas use a one-piece integrated design, with high-frequency and low-frequency circuits mixed in the PCB substrate, which has the following disadvantages: 1) RF performance debugging is difficult due to the mixed high / low frequency traces, mutual interference between high / low frequency signals, shared ground plane, and poor isolation. 2) Heat pipes are difficult to design because high heat-dissipating devices (such as PAs) are located close to sensitive devices, resulting in severe thermal coupling. 3) The process is complex and costly. Traditional SIP one-piece phased array antennas are implemented using PCBs, which have as many as 20 to 30 layers. The process involves back drilling and many blind holes, resulting in extremely high processing costs. Moreover, the substrate size is large, and thermal expansion and contraction lead to low yield.
[0007] 4) The scale is difficult to expand arbitrarily and the design is not conformal to the carrier.
[0008] Therefore, there is an urgent need to develop an ultra-thin, fully integrated, multi-band compatible, wide-array scalable, anti-interference, and heat dissipation phased array antenna module based on SIP architecture to meet the development needs of next-generation information equipment for high-performance, miniaturized, highly reliable, and low-cost phased array antennas. Summary of the Invention
[0009] The purpose of this invention is to address a series of technical bottlenecks in existing phased array antenna technology, including large size, high profile, low integration, high RF link loss, poor heat dissipation efficiency, high assembly cost of multiple modules, and difficulty in conformal integration with curved carriers. This invention proposes a system-in-package (SIP) subarray antenna module based on the concept of "high-frequency / low-frequency circuit separation." This solution fundamentally transforms traditional "hybrid one-piece" planar integration into a three-dimensional SIP architecture of "functional decoupling, three-dimensional stacking, and vertical interconnection," aiming to systematically resolve the inherent contradictions between RF performance, development cost, thermal management, reliability, and manufacturability. Specific technical objectives are as follows: Achieving integrated closed-loop system functionality: Within an ultra-thin package, through a three-layer heterogeneous integration structure consisting of antenna functional layer 1, RF signal processing layer 2, and digital control and power supply layer 3, the antenna array, TR components, beam control circuit, DC / DC power supply, heat dissipation, amplitude and phase calibration, and temperature detection are fully integrated, forming an independent, closed-loop working system that does not require external auxiliary modules, thereby greatly simplifying peripheral circuits and reducing system complexity and development costs.
[0010] Achieving ultra-wideband coverage and high-performance beam scanning: By optimizing the wideband wide-beam antenna element 4 and rigorous array design, the multi-band wideband phased array antenna system can seamlessly cover mainstream communication and radar frequency bands such as L, S, C, X, Ku, and Ka, and supports large-angle, low-sidelobe beam scanning of more than ±60° in an extremely wide frequency band to meet the needs of multi-functional and multi-mission applications.
[0011] Achieving high-performance, low-loss RF signal links: By employing short-distance vertical interconnect technologies such as through-glass vias (TGV), the significant insertion loss caused by connectors and long-distance transmission lines in traditional solutions is completely eliminated, constructing an ultra-low-loss RF channel, thereby effectively improving signal transmission efficiency, system sensitivity, and effective radiated power.
[0012] Achieving superior electromagnetic compatibility (EMC) and thermal reliability: Through physical separation of high-frequency / low-frequency circuits, multi-band signal isolation, and zoned heat dissipation design, the interference of digital noise on radio frequency signals is suppressed at the source, and heat under high power density is efficiently managed, ensuring high stability and high reliability of the system under complex electromagnetic environment and high power, long-term continuous operation conditions.
[0013] Achieving high modularity, flexibility, and low-cost mass production: Based on standardized SIP subarray modules, it supports seamless and flexible expansion of array sizes from 4×4 to 64×64 and even larger. Simultaneously, the integrated packaging process replaces complex multi-level assembly, significantly reducing the number of components, connectors, and structural parts, substantially lowering material, assembly, and debugging costs, while ensuring consistent product performance and high yield, meeting the economic requirements of large-scale industrial deployment.
[0014] In summary, the ultimate goal of this invention is to provide a new generation of phased array antenna solutions that achieve comprehensive breakthroughs in electrical performance (wideband, high gain, low loss), physical characteristics (ultra-thin, conformal), reliability (high isolation, excellent heat dissipation), and economy (high integration, low cost, easy mass production) through the aforementioned systematic design concepts. This provides core hardware support for equipment in satellite communications, advanced radar, and UAV data links, ultimately enabling longer-range, higher-speed, and more stable and reliable wireless communication and sensing capabilities. Its core objective is to resolve the inherent contradictions between RF performance, development costs, thermal management, and manufacturability through a fundamental shift from "hybrid one-piece" planar integration to a "functionally decoupled, three-dimensionally stacked, vertically interconnected" system-in-package (SIP) architecture. Specifically, it aims to achieve: extreme thinness and high conformal capability. Through the high-density integration of multiple functions (antenna array, TR component, beam control circuit, DC / DC power supply, heat dissipation) in three-dimensional vertical stacking within the package 16, the overall thickness of the active array is compressed to the order of a few millimeters. Combined with flexible substrate or 3D printing technology, it achieves perfect conformal bonding between the antenna array and various curved carriers, breaking through the limitations of traditional planar installation scenarios.
[0015] In summary, this invention aims to provide a new generation of phased array antenna solutions that achieve comprehensive breakthroughs in electrical performance (wideband, high gain, low loss), physical characteristics (ultra-thin, conformal), reliability (high isolation, excellent heat dissipation), and economy (high integration, low cost, easy mass production) through the aforementioned systematic innovations, providing core hardware support for satellite communication, advanced radar, UAV data links, and other fields.
[0016] This invention is achieved through the following technical solution: a high-frequency / low-frequency circuit-separated multi-band wide-array SIP subarray module antenna, comprising a three-layer heterogeneous integrated structure bonded sequentially from top to bottom through a vertical interconnect structure. This structure first completes the bonding of the antenna functional layer 1 and the radio frequency signal processing layer 2 to form a SIP subarray module; several SIP subarray modes are then integrated with a single digital control and power supply layer 3 at high density, ultimately constituting a fully functional active phased array antenna system. The three-layer heterogeneous integrated structure comprises: The antenna functional layer 1 is made of a flexible liquid crystal polymer substrate, on which N×N wideband wide beam antenna elements 4 are integrated in the form of an antenna array. The wideband wide beam antenna elements 4 cover the L~Ka frequency band and realize wide-angle beam scanning through a comprehensive design of feeding balun 24, compensation network 25, impedance matching network 22, slotting and multi-layer coupling. The radio frequency signal processing layer 2, located below the antenna functional layer 1, is made of a radio frequency glass substrate. The radio frequency glass substrate has vertical interconnection channels with glass vias corresponding to the upper broadband wide beam antenna units 4. The glass substrate features partitioned isolation cavities, deep trench isolation walls for channel decoupling, high and low frequency heterogeneous wiring density matching, and interlayer gradient damping isolation. Furthermore, the radio frequency glass substrate integrates the transceiver chip 5, amplitude and phase chip 6, driver chip 7, and power divider network 21 corresponding to the channel of each broadband wide beam antenna unit 4 through a high-density integration process. The digital control and power layer 3, located below the radio frequency signal processing layer 2, is made of FR4 substrate and integrates a field programmable gate array (FPGA) 10, digital signal processing circuit 11, power supply circuit 12, control interface 13, power supply interface 14, radio frequency interface 15 and temperature sensor. The flexible liquid crystal polymer substrate, the radio frequency glass substrate, and the FR4 substrate are integrated sequentially using a specific bonding process that prioritizes high frequencies over low frequencies. First, the antenna functional layer 1 and the RF signal processing layer 2 are bonded together via a 2×2 array channel to form a SIP subarray module. Then, several SIP subarray modules are bonded to the digital control and power layer 3 to complete the construction of a high-frequency / low-frequency circuit-separated multi-band wide-array SIP subarray module antenna. Specifically, the bonded LCP substrate antenna functional layer 1, glass substrate RF signal processing layer 2, and FR4 substrate digital control and power layer 3 form a three-layer heterogeneous integrated structure. The LCP substrate antenna functional layer 1 and glass substrate RF signal processing layer 2 are connected via a 2×2 array channel to form SIP subarray modules. Each SIP subarray module uses a BGA ball array 9 as its external circuit interface. Different numbers of SIP subarray modules are spliced together, and then each SIP subarray module's BGA ball array 9 is bonded to the FR4 substrate digital control and power layer 3 to form phased array antennas with different performance indicators.
[0017] The multi-band wide-array SIP sub-module phased array antenna disclosed in this invention is essentially a fundamental transformation of the traditional "hybrid one-piece" SIP integrated architecture based on the system-in-package (SIP) concept of "functional decoupling, three-dimensional stacking, vertical interconnection, and high-low frequency separation." High-frequency / low-frequency circuit separation aims to solve the fundamental challenges of multi-band / wide-band operation. This design effectively resolves the inherent contradictions between RF performance, development cost, thermal management, manufacturability, and system cost, and has the following outstanding advantages compared to existing technologies:
[0018] Existing phased array antennas mostly employ discrete components assembled on PCBs, resulting in large size and high profile. This invention integrates all core functions (antenna array, TR components, beam control circuit, DC / DC power supply, heat dissipation, etc.) within a single package 16 through multi-layer vertical stacking. It utilizes physical separation of high and low frequency circuits, 3D stacked SIP integration, modular expansion, and zoned heat dissipation to fundamentally address the performance, heat dissipation, and cost contradictions. Furthermore, the antenna array is directly integrated onto the package surface using a flexible LCP substrate or 3D printing technology. This architecture controls the overall antenna thickness within an ultra-thin range of 2.5mm to 4mm, achieving ultra-low profile characteristics and enabling perfect conformal fitting with various curved surfaces, greatly expanding its application capabilities in space-constrained scenarios such as aircraft, vehicles, and portable devices. Moreover, the low-jitter clock, voltage-equalizing adaptive power supply, and differential synchronous beam control bus closed-loop error correction solve the problems of amplitude and phase inconsistency, timing drift, and beam distortion in large-scale SIP sub-array module cascading.
[0019] Traditional solutions rely on long-distance inter-board connectors and cables, resulting in high insertion loss and poor consistency. This invention employs a vertical stacking structure and short-distance vertical interconnects (such as TGV and micro-bumps), completely eliminating external connectors and minimizing the RF signal transmission path. This minimizes insertion and transmission losses in the RF link (especially in the millimeter-wave band), improves signal power utilization efficiency and signal-to-noise ratio, and thus enhances the overall sensitivity and effective radiated power of the phased array antenna. Based on conventional high-speed interfaces, this invention adds differential anti-interference transmission and timing error correction logic to adapt to high- and low-frequency heterogeneous stacking architectures, solving the problems of inconsistent signal delays and high bit error rates in multi-layer heterogeneous substrates.
[0020] This invention, through a wideband, wide-beam design of the antenna element layer (comprehensive optimization of the feed balun 24, compensation network 25, impedance matching network 22, slotting, multi-layer coupling, etc.), structurally ensures the wideband and large-angle radiation capability of the antenna element. Combined with strict spacing control of the array elements designed at half wavelengths, seamless coverage within the L~Ka band is achieved, and wide-angle beam scanning performance of ±60°~±70° is ensured, effectively suppressing grating lobes and guaranteeing stable signal quality across the entire frequency band and large angle range.
[0021] To address the electromagnetic compatibility challenges posed by high-density integration, a systematic isolation strategy is adopted: Physical separation of high- and low-frequency circuits: The RF circuits of different frequency bands are physically and electrically isolated. The high-frequency RF glass substrate and the low-frequency digital FR4 substrate are laid out in layers, cutting off the interference path of digital noise to the RF signal at the source.
[0022] Multi-band signal area isolation: Isolation design at the layout and routing levels to suppress mutual interference between different operating frequency bands. This includes glass substrate partitioned isolation cavities, deep trench isolation wall channel decoupling, high- and low-frequency heterogeneous wiring density matching, and interlayer gradient damping isolation.
[0023] Dedicated power supply noise isolation: Through optimized design of the power supply circuit 12, employing a comprehensive design approach integrating multiple methods, the power supply noise, ripple, and glitches are comprehensively addressed by "optimizing the switching loop layout and LC / π-type filtering to suppress ripple, using high PSRR linear post-regulation or DC-DC isolation to block common-mode noise, and combining this with input EMI common-mode choke, ferrite bead absorption, and single-point grounding shielding." This multi-layered, three-dimensional high isolation design significantly improves the system's anti-interference capability and long-term operational stability in complex electromagnetic environments.
[0024] Performance optimization: High-frequency circuits can be specifically optimized for high-frequency performance (e.g., using GaN or GaAs processes), focusing on RF efficiency, noise figure, and power output, reducing performance trade-offs caused by hybrid designs. Low-frequency circuits can be based on mature, highly integrated Si CMOS or BiCMOS processes to implement complex beam control, signal processing, and system management functions, reducing costs and improving reliability.
[0025] Thermal Management: The high-frequency power amplifier is the main heat source. Separating the high-frequency circuit allows for the design of an independent, efficient, and close-range heat dissipation path. By incorporating high-efficiency heat dissipation microchannels 8 into the RF signal processing layer 2 of the high-frequency circuit and the digital control and power supply layer 3 of the low-frequency circuit, rapid heat conduction, heat transfer, and heat dissipation are achieved. This separate design solves the engineering feasibility problems of difficult thermal management and uneven heat dissipation faced by traditional phased array antenna hybrid designs.
[0026] Integration and Interconnection: SiP is the ideal carrier for realizing this discrete architecture. Within the same package, technologies such as 3D stacking, silicon interposers, and fan-out packaging can be used to achieve ultra-short, low-loss, and high-density interconnections between high-frequency and low-frequency chips, solving the loss and parasitic effects problems of traditional PCB-level interconnects at high frequencies.
[0027] Scalability and modularity: Standardized SIP subarray modules are like "Lego bricks," which can be directly assembled into "wide arrays" of any size. This greatly simplifies the manufacturing, testing, and maintenance of large phased arrays (such as those used in satellite internet gateways and long-range early warning radars).
[0028] Multi-band / wideband operation: The discrete design facilitates the integration of different frequency band RF channels within the same subarray. For example, a single SIP subarray module can simultaneously contain S-band and Ka-band circuitry, achieving frequency reuse or synchronous operation through internal filters and switching networks, truly realizing multi-functional integration.
[0029] Traditional highly integrated modules face heat dissipation bottlenecks. This invention innovatively adopts a zoned heat dissipation and collaborative thermal management design, differentiating the layout of high-frequency power devices and low-frequency digital chips, and constructing an efficient heat dissipation path through a high-efficiency heat dissipation microchannel 8 optimized by thermal simulation and a heat dissipation enhancement layer. This design can precisely control heat sources and quickly dissipate the heat generated during continuous high-power operation, effectively preventing performance degradation caused by local overheating and ensuring the reliability of the antenna under high power density. The added three-layer composite power noise isolation + hollow heat dissipation transition + thermal simulation topology microchannel zoned heat dissipation integrated structure achieves electromagnetic isolation and thermal isolation coupling synergy, overcoming the industry problem of "thermal crosstalk + electromagnetic crosstalk superposition and deterioration" under high-power multi-frequency conditions.
[0030] This invention is based on a unique synchronous calibration architecture for large-scale array expansion. Relying on independent subarray shielding and global synchronous collaboration, it achieves unified beamforming across multiple frequency bands. It abandons the industry-standard temperature bonding process, using standardized SIP subarray modules (e.g., 2×2) as the basic unit, and employs a unified clock, synchronization control, and centralized power supply architecture. The process involves first bonding the antenna functional layer 1 and the RF signal processing layer 2 to form the SIP subarray module, and then bonding it to the digital control and power layer 3, achieving an integrated process that physically separates high and low frequencies. The SIP subarray module incorporates a BGA ball array 9, which can interconnect with the digital control and power layer 3, allowing for array expansion. This modular design enables seamless cascading expansion of the array size as needed, flexibly scaling from 4×4 to 16×4, 16×8, 16×12, 16×16, ..., 64×64, and even larger sizes, to meet different gain and coverage requirements from portable terminals to large equipment, greatly enhancing the product's scenario adaptability and deployment flexibility.
[0031] Scaling expansion: Based on 4×4, it can be seamlessly expanded to 16×16, 32×32, 64×64, with no grating lobes across the entire frequency band; array thickness is 2.5mm~4mm.
[0032] Isolation and heat dissipation: high and low frequency separation, frequency band partitioning, ground plane segmentation, and independent heat dissipation channels; GaAs / GaN is used for high frequency and CMOS is used for low frequency, balancing performance and cost.
[0033] Bonding steps: Fabricate antenna functional layer 1 → Fabricate RF signal processing layer 2 and integrate the chip → Bond “antenna functional layer 1 + RF signal processing layer 2” to form a SIP subarray module → Package the SIP subarray module into a BGA ball array 9 → Fabricate digital control and power layer 3 → Bond “several SIP subarray modules + a whole digital control and power layer 3” through BGA ball array 9 → Form a phased array antenna.
[0034] This invention features a unique gradient-differentiated thermo-pressing bonding system: low-temperature pre-pressing to prevent deformation, high-temperature shaping to maintain accuracy, and medium-temperature composite stress relief. It solves long-standing problems such as thermal deformation of the LCP flexible layer, misalignment of glass vias, interlayer delamination, and interconnect failure. Through 3D SIP packaging technology, it replaces the traditional long chain of "discrete component procurement - multi-level assembly - complex debugging" with "one-time integration," significantly reducing the number of chips / devices, connectors, metal cavities, and structural components, and simplifying the process. This not only significantly reduces material and labor costs but also ensures extremely high consistency and batch stability of product performance due to standardized packaging and bonding processes, resulting in a high yield and fully meeting the economic requirements of large-scale industrial mass production and batch equipment deployment. The thickened metal inner wall of the vias and the chamfered impedance gradient at the via opening are a dedicated structural design for ultra-wideband (L~Ka band) vertical interconnects, which can suppress port reflections within the ultra-wideband and solve the problems of high and low frequency impedance mismatch and high-frequency resonance in traditional glass vias. The multi-band grating lobe collaborative suppression topology is not a conventional design of a single Ka-band half-wavelength array. Through the linkage of high-frequency grating constraints and low-frequency beam compensation, it achieves a full-band grating lobe-free ultra-thin array, breaking through the technical bottleneck of traditional multi-band arrays that cannot simultaneously address high and low frequency grating lobes. The integrated anti-interference and heat dissipation architecture, which combines ground segmentation, frequency band partitioning, and heat dissipation channel partitioning, is a coupling of electromagnetic compatibility and thermal design. It is not a simple layered layout, but rather achieves four-dimensional collaborative optimization of electrical performance, heat dissipation, weight reduction, and cost.
[0035] Experimental results show that the phased array antenna designed in this invention achieves 360° beam scanning in the 6GHz~18GHz range, with a gain exceeding 20dB and excellent cross-polarization performance. The antenna elements possess a wide -10dB impedance bandwidth of up to 20%, and maintain stable gain over a wide angular coverage range of -60° to +60°. This comprehensively verifies the effectiveness of this design scheme in terms of wide bandwidth, high gain, large-angle scanning, and stable radiation performance, demonstrating extremely high engineering application value. Beneficial effects
[0036] Ultra-thin and highly integrated: 3D stacking, millimeter-thickness, conformal curved surface, integrating antenna array, TR components, beam control circuit, DC / DC power supply, heat dissipation, etc.
[0037] Low loss and high performance: Vertical interconnect shortens the path, has low high-frequency loss, covers L~Ka bands, and features wide-angle scanning.
[0038] High reliability and strong anti-interference: physical isolation between high and low frequencies, multi-band partitioning, power supply noise suppression, and strong stability.
[0039] High-efficiency heat dissipation: heat source partitioning, independent heat dissipation channels, suitable for high-power scenarios.
[0040] Modular and low-cost: Standardized SIP sub-array modules allow for flexible expansion, simplified processes, and good consistency in mass production.
[0041] And it can achieve the following technical objectives: Ultra-thin and highly conformal: Through a three-layer heterogeneous integration structure consisting of antenna functional layer 1, RF signal processing layer 2, and digital control and power layer 3, the antenna array, TR components, beam control circuit, DC / DC power supply, and heat dissipation structure are vertically stacked and integrated in three dimensions within the package 16, compressing the total thickness of the entire active array to the millimeter level (2.5mm~4mm). Combined with flexible substrates (such as LCP) or additive manufacturing processes, perfect conformal bonding with various complex curved surfaces can be achieved, greatly expanding the application boundaries.
[0042] Complete system function closed-loop integration: The antenna array, TR component, beam control circuit, amplitude and phase calibration, DC / DC power supply and temperature monitoring are fully integrated in the ultra-thin package 16, forming an independent working unit that does not require external RF and beam control modules, which greatly simplifies the system architecture and reduces peripheral complexity and overall cost.
[0043] Ultra-wideband coverage and high-performance scanning: Through the comprehensive design of wideband wide-beam antenna element 4 (such as feeding balun 24, impedance matching network 22, compensation network 25, slot coupling, etc.) and strict half-wavelength grid array arrangement, seamless coverage in multiple frequency bands such as L, S, C, X, Ku, and Ka is achieved, and large-angle, low-sidelobe beam scanning of more than ±60° is supported in an extremely wide frequency band, meeting the requirements of multi-functional integrated missions.
[0044] High-performance, low-loss RF link: Employing short-pitch vertical interconnect technologies such as glass vias, it completely replaces traditional board-to-board connectors and long-distance transmission lines, constructing an ultra-low insertion loss RF channel, significantly improving signal transmission efficiency, system sensitivity, and effective radiated power.
[0045] Excellent electromagnetic compatibility and thermal reliability: Through physical separation of high and low frequency circuits, multi-band signal partitioning and isolation, and collaborative heat dissipation design, the interference of digital noise on radio frequency signals is suppressed at the source, and effective thermal management of high power density is achieved, ensuring high stability of the system under complex electromagnetic environment and long-term high power operation conditions.
[0046] Highly modular, scalable, and low-cost mass production: Based on standardized SIP subarray modules (such as 2×2 channels) as the basic building block, it supports flexible array expansion from 4×4 to 64×64 and even larger scales through splicing. The integrated packaging process replaces complex multi-level assembly, significantly reducing the number of discrete components, connectors, and structural parts, significantly reducing material, assembly, and debugging costs, and ensuring excellent performance consistency and mass production yield.
[0047] In summary, this invention, through architectural innovation, synergistically optimizes electrical, thermal, and mechanical performance within a single ultra-thin package 16, successfully realizing a high-performance, highly reliable, highly integrated, low-cost, and easily mass-producible phased array antenna system. This represents a key technological path to meet the core requirements of "lightweight, thin, small, powerful, and inexpensive" phased array antennas in next-generation communications, radar, and electronic warfare fields. It can be widely applied to phased array systems in various fields such as satellite communications, radar, vehicle-mounted, airborne, and shipborne systems. Attached Figure Description
[0048] Figure 1 is a schematic diagram of the phased array antenna composition of a multi-band wide array SIP module; Figure 2 is a three-dimensional top view of the multi-band wide array SIP module phased array antenna; Figure 3 is a three-dimensional bottom view of the phased array antenna of the multi-band wide array SIP module; Figure 4 This is an exploded top view of a SIP subarray module composed of 2×2 channel bonds in the antenna functional layer and the radio frequency signal processing layer. Figure 5 This is an exploded bottom view of a SIP subarray module composed of 2×2 channel bonds in the antenna functional layer and the radio frequency signal processing layer.
[0049] In the diagram: 1 Antenna functional layer, 2 RF signal processing layer, 3 Digital control and power supply layer, 4 Wideband beam antenna unit, 5 Transceiver chip, 6 Amplitude and phase chip, 7 Driver chip, 8 High-efficiency heat dissipation microchannel, 9 BGA ball array, 10 Field Programmable Gate Array (FPGA), 11 Digital signal processing circuit, 12 Power supply circuit, 13 Control interface, 14 Power supply interface, 15 RF interface, 16 Package, 17 User baseband, 18 Software interface, 19 Power interface, 20 Signal interface, 21 Power divider network, 22 Impedance matching circuit, 23 Active chip integration area, 24 Feed balun, 25 Compensation network. Detailed Implementation
[0050] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the invention.
[0051] See Figure 1 , Figure 2 and Figure 3 In the preferred embodiment described below, a high-frequency / low-frequency circuit-separated multi-band wide-array SIP subarray module antenna includes a three-layer heterogeneous integrated structure bonded sequentially from top to bottom through a vertical interconnect structure. This structure constitutes a fully functional active phased array antenna within a package 16. The three-layer heterogeneous integrated structure includes: The antenna functional layer 1 is made of a flexible liquid crystal polymer substrate, on which N×N wideband wide beam antenna elements 4 are integrated in an array. The antenna elements can cover the L~Ka frequency band and achieve wide-angle beam scanning through the comprehensive design of feeding balun 24, compensation network 25, impedance matching network 22, slotting and multi-layer coupling.
[0052] The radio frequency signal processing layer 2, located below the antenna functional layer, is made of radio frequency glass substrate. The radio frequency glass substrate has vertical interconnect channels with glass vias corresponding to the upper broadband wide beam antenna units 4. The radio frequency glass substrate integrates transceiver chips 5, amplitude and phase chips 6, driver chips 7, power divider network 21, and high-efficiency heat dissipation microchannels 8 designed for heat dissipation of chips and devices in the radio frequency signal processing layer 2 through high-density integration process.
[0053] The digital control and power layer 3, located below the radio frequency signal processing layer 2, is fabricated on an FR4 substrate. It integrates a field-programmable gate array (FPGA) 10, digital signal processing circuitry 11, power supply circuitry 12, control interface 13, power supply interface 14, radio frequency interface 15, a temperature sensor, and a high-efficiency heat dissipation microchannel 8 designed for cooling the chips and circuits within the digital control and power layer 3. This high-efficiency heat dissipation microchannel 8 extends through both the radio frequency signal processing layer 2 and the digital control and power layer 3, and is implemented using a phased array antenna system overall thermal simulation layout design and integrated process.
[0054] The above three-layer heterogeneous integration, wherein: Antenna functional layer 1: It adopts a flexible LCP substrate and integrates N×N (preferably 2×2) wideband wide beam antenna elements 4; the wideband wide beam antenna elements 4 are designed with feeding balun 24, compensation network 25, impedance matching network 22, slotting and multi-layer coupling, covering the L~Ka frequency band, supporting wide-angle scanning, and conformal curved surface.
[0055] RF signal processing layer 2: adopts an RF glass substrate, with built-in glass through-hole vertical interconnect channel, integrating transceiver chip 5, amplitude and phase chip 6, driver chip 7, and power divider network 21; high-frequency circuit, low-loss short-distance interconnect.
[0056] The flexible liquid crystal polymer substrate, the radio frequency glass substrate, and the FR4 substrate are integrated sequentially using a specific bonding process that prioritizes high frequencies over low frequencies. First, the antenna functional layer 1 is bonded to the radio frequency signal processing layer 2 to form a SIP subarray module. Then, the SIP subarray module is bonded to the digital control and power layer 3, completing the construction of a SIP subarray module antenna with physically separated high-frequency and low-frequency circuits. Specifically, the bonded LCP substrate antenna functional layer 1, glass substrate radio frequency signal processing layer 2, and FR4 substrate digital control and power layer 3 form a three-layer heterogeneous integrated structure. The LCP substrate antenna functional layer 1 and glass substrate radio frequency signal processing layer 2 are constructed using a "small particle block" structure, with each SIP subarray module forming a 2×2 array channel. Each SIP subarray module uses a BGA ball array 9 as its external circuit interface. Different numbers of SIP subarray modules are spliced together, and then each SIP subarray module's BGA ball array 9 is bonded to the FR4 substrate digital control and power layer 3 to form a phased array antenna with different performance indicators.
[0057] The aforementioned three-layer structure is integrated using a specific bonding process sequence of "high frequency first, then low frequency": First, the antenna functional layer 1 is bonded to the RF signal processing layer 2 to form a SIP subarray module; then, these SIP subarray modules are bonded to the digital control and power layer 3, ultimately completing the construction of a SIP subarray module antenna with physically separated high-frequency and low-frequency circuits. Specifically, the antenna layer composed of an LCP substrate, the RF circuit layer composed of a glass substrate, and the low-frequency circuit layer composed of an FR4 substrate form a standard SIP subarray module through a 2×2 array channel. Each subarray module uses a BGA ball array 9 as its external circuit interface, and different numbers of subarray modules can be spliced together and then bonded to the system-level FR4 backplane via the BGA ball array 9, thereby flexibly constructing phased array antennas of different sizes and performance indicators. The antenna array consists of N×N wideband widebeam antenna elements 4. The TR component consists of a transceiver chip 5, an amplitude and phase chip 6, and a driver chip 7, enabling signal transmission and reception, amplification, filtering, phase shifting, amplitude modulation, and up / down conversion of RF signals. The beam control circuit mainly consists of a field-programmable gate array (FPGA) 10 and a digital signal processing circuit 11, primarily controlling the TR component to achieve beamforming and rapid scanning of the multi-band broadband phased array antenna, as well as amplitude and phase calibration and temperature monitoring. The core circuit of the DC / DC power supply is implemented by the power supply circuit 12, which provides power to various components / devices of the multi-band broadband phased array antenna through power distribution.
[0058] Within the SIP subarray module, a power and noise isolation structure is provided between the RF signal processing layer 2 and the digital control and power layer 3. Furthermore, the high-frequency power region of the RF signal processing layer 2 and the low-frequency digital region of the digital control and power layer 3 are partitioned in layout and connected together to an integrated high-efficiency heat dissipation microchannel 8 optimized by thermal simulation.
[0059] Furthermore, a multi-layer composite power noise isolation stack structure is set between the radio frequency signal processing layer 2 and the digital control and power supply layer 3, including a high-frequency ground isolation layer, a low-frequency filter buffer layer and a hollow heat dissipation transition layer; the high-frequency power region of the radio frequency signal processing layer 2 and the low-frequency digital region of the digital control and power supply layer 3 are strictly partitioned and mismatched, and the partitioned regions are connected to the high-efficiency heat dissipation microchannel 8 optimized by global thermal simulation topology, so as to realize heat source partitioning temperature conduction and noise layering suppression, and avoid the problems of thermal coupling and electromagnetic crosstalk superposition under high power multi-frequency band operation.
[0060] The specific bonding process sequence of high frequency followed by low frequency employs a high-low temperature gradient differential hot-pressing bonding process, with the following specific steps: S1. A broadband wide-beam antenna element 4 and a microstrip feed line are precisely fabricated on a flexible liquid crystal polymer substrate, and an impedance matching network 22, a feeding balun 24, a compensation network 25 are completed and integrated with a slotted coupling structure. S2. High-precision glass vias are etched on the radio frequency glass substrate, and active chip integration area 23 is formed by wafer-level flip-chip packaging process to form a whole radio frequency front-end wafer; the active chip integration area 23 has a transceiver chip 5, an amplitude and phase chip 6, a driver chip 7, and related matching circuits arranged in sequence. S3. Using a gradient hot-pressing process with low-temperature pre-pressing and high-temperature shaping, the antenna substrate (antenna functional layer 1) and the RF front-end wafer (RF signal processing layer 2) are bonded for the first time to avoid thermal deformation of the high-frequency fine structure, ensure vertical interconnect alignment accuracy, and form a SIP subarray module. S4. On the FR4 substrate, complete the integrated layout of the field programmable gate array 10, digital signal processing circuit 11, power supply circuit 12, control interface 13, power supply interface 14, radio frequency interface 15 and temperature sensing circuit. S5. Using a medium-temperature stable bonding process, several SIP subarray modules are stacked and packaged with a whole FR4 low-frequency substrate (digital control and power layer 3) in three dimensions to construct phased array antennas of different sizes and performance indicators.
[0061] The gradient differential hot-press bonding process can achieve zero-deformation bonding of high-frequency precision layers and gradual release of stress in heterogeneous interlayer interconnection, solving defects such as LCP deformation, glass via misalignment, and interlayer delamination caused by traditional uniform temperature bonding.
[0062] Furthermore, multiple SIP subarray modules are cascaded and expanded through an inter-subarray interconnection network. The inter-subarray interconnection network adopts a synchronous timing closed-loop calibration architecture, including a global low-jitter synchronous clock distribution network, a voltage equalization adaptive centralized power supply bus, and a differential synchronous beam control transmission bus. This enables full-domain synchronous calibration of clock phase, power supply amplitude, and beam control timing in large-scale arrays with multiple modules, solving the problems of timing offset and poor amplitude-phase consistency in traditional cascaded arrays.
[0063] The SIP subarray modules cascaded by the inter-subarray interconnection network constitute a large-scale array antenna. Each subarray module is independently shielded and works synchronously and collaboratively to achieve multi-band wide-angle unified beamforming.
[0064] The N×N array element is a 2×2 array element, corresponding to four high-precision glass through-hole vertical interconnection channels. The glass through-hole adopts a thickened inner metal wall and a chamfered impedance gradient structure at the orifice, which effectively suppresses high-frequency interconnection port reflection and improves the stability of L-Ka band vertical interconnection.
[0065] The antenna is based on a 4×4 array, with the array element spacing optimized according to the half-wavelength design of the Ka band. The array size can be seamlessly cascaded and expanded in the range of 4×4 to 64×64. The array adopts a multi-band grating lobe collaborative suppression topology, and achieves full-band grating lobe-free scanning through the combination of high-frequency grating constraints and low-frequency beam compensation; the overall thickness of the antenna is controlled between 2.5mm and 4mm, taking into account both ultra-thin integration and high-performance multi-band radiation characteristics.
[0066] Furthermore, the antenna functional layer (1) and the radio frequency signal processing layer 2 adopt an integrated anti-interference heat dissipation architecture with high-frequency independent ground layer segmentation, frequency band partition isolation, and heat dissipation channel partition coupling; the antenna functional layer 1 and the radio frequency signal processing layer 2 use small-area high-performance radio frequency materials to ensure low loss characteristics of multiple frequency bands; the digital control and power supply layer 3 uses a large-size low-cost substrate to achieve large-scale circuit integration, and through heterogeneous material partition matching design, the overall cost and weight of the array are greatly reduced without sacrificing electrical performance.
[0067] The radio frequency signal processing layer 2 integrates a transceiver chip 5, an amplitude and phase chip 6, and a driver chip 7, and uses high-performance semiconductor materials such as GaAs and GaN. The radio frequency signal processing layer 2 is equipped with dedicated isolation shielded micro-strip line trenches, which limit the transmission of high-frequency signals to independent trench areas. Combined with a local grounding shielding structure, it completely isolates high-frequency crosstalk and ensures the fidelity and low-loss transmission characteristics of multi-band signals.
[0068] The digital control and power layer 3 integrates a field-programmable gate array (FPGA) 10, a digital signal processing circuit 11, and a power supply circuit 12, and adopts CMOS technology to reduce integration costs. The digital control and power layer 3 achieves isolated signal interaction with the radio frequency signal processing layer 2 through anti-interference differential LVDS and JESD204B high-speed serial interface. With the help of timing error correction logic, it realizes high-speed, synchronous, and low-error transmission of high and low frequency cross-layer signals.
[0069] In the aforementioned SIP subarray module, an LCP substrate subarray antenna functional layer 1 and a glass substrate subarray RF signal processing layer 2 are bonded vertically from top to bottom using a vertical interconnect structure. The LCP substrate subarray antenna functional layer 1 integrates 2×2 wideband widebeam antenna elements 4 in an array configuration. The ultra-wideband design of the wideband widebeam antenna elements 4 employs a comprehensive design including a feed balun 24, a compensation network 25, an impedance matching network 22, slotting, and multi-layer coupling to cover the L~Ka frequency band and achieve wide-angle beam scanning. Vertical interconnect channels with glass vias, corresponding one-to-one with the upper wideband widebeam antenna elements 4, are fabricated within the glass substrate subarray RF signal processing layer 2. Furthermore, the transceiver chip 5, amplitude / phase chip 6, and driver chip 7 corresponding to each channel of the wideband widebeam antenna element 4 are integrated on the substrate of the glass substrate subarray RF signal processing layer 2 using a high-density integration process, thereby achieving RF signal amplification, phase shifting, and amplitude modulation.
[0070] A BGA ball array 9 with an external interface is placed at the bottom layer of the glass substrate subarray RF signal processing layer 2, thereby replacing the RF connectors and low-frequency connectors in the traditional phased array antenna, achieving the purpose of reducing component costs, reducing circuit losses, improving system reliability, and enhancing the performance of the phased array antenna.
[0071] In the aforementioned SIP subarray module, several SIP subarray modules can be spliced together to form 16-element, 64-element, 128-element, 256-element, 384-element, ..., 1536-element, 4096-element, etc., thus forming product series with different specifications. All of the several SIP subarray modules are connected to the circuit interface of the FR4 substrate digital control and power layer 3 through their own BGA ball array 9. Finally, several LCP substrate subarray antenna functional layers 1, several glass substrate subarray RF signal processing layers 2, and a whole FR4 substrate digital control and power layer 3 are bonded together from top to bottom through a vertical interconnect structure.
[0072] The FR4 substrate digital control and power layer 3 integrates a field-programmable gate array (FPGA) 10, a digital signal processing circuit 11, and a power supply circuit 12. These devices and circuits together provide power supply, clock synchronization, amplitude control, and phase control for the active devices in each channel of the phased array antenna, enabling the phased array antenna to ultimately complete spatial power combining and beam scanning. Specifically, the LCP substrate subarray antenna functional layer 1, the glass substrate subarray RF signal processing layer 2, and the FR4 substrate digital control and power layer 3 are integrated sequentially using a specific bonding process: first, the LCP substrate subarray antenna functional layer 1 and the glass substrate subarray RF signal processing layer 2 are bonded together to form a SIP subarray module; then, the multiple SIP subarray modules are bonded to a single FR4 substrate digital control and power layer 3, completing the construction of a phased array antenna with physically separated high-frequency / low-frequency circuits in the SIP subarray module. Within the SIP subarray phased array antenna, a power and noise isolation structure is provided between the SIP subarray module and the FR4 substrate digital control and power layer 3. Furthermore, the high-frequency power region of the SIP subarray module and the low-frequency digital region of the FR4 substrate digital control and power layer 3 are partitioned in layout and connected together to a package 16 equipped with a cooling fan, which has been optimized through thermal simulation. The cooling fan can quickly dissipate the heat from the high-efficiency heat dissipation microchannels 8 built into the RF signal processing layer 2 and the digital control and power layer 3, allowing the phased array antenna to achieve a uniform temperature thermal equilibrium state and operate effectively.
[0073] The SIP subarray phased array antenna module includes a control interface 13, a power supply interface 14, and a radio frequency interface 15. These interfaces pass through a dedicated structural channel within the package 16, connecting downwards to the user baseband 17. They are then sequentially connected to the user baseband 17's software interface 18, power supply interface 19, and signal interface 20. Ultimately, through commands issued by the user baseband, the high-frequency / low-frequency circuit-separated multi-band wide array SIP subarray phased array antenna module achieves its function: power-on and ready to use, one-button power-on and automatic network access, enabling fast and convenient network connectivity anytime, anywhere. It supports "communication on the move," real-time satellite tracking, and ensures continuous and stable communication during mobile operations. It also supports broadband application scenarios such as high-definition conferencing, real-time data transmission, and mobile office.
[0074] In an optional embodiment, the antenna is based on a 4×4 array, with the array element spacing designed according to half-wavelength of the Ka band. The array size can be expanded in the range of 4×4 to 64×64, and can be seamlessly cascaded to a wide array of 16×16, 32×32, or 64×64, achieving full-band grating-free operation. The overall thickness of the antenna array is 2.5mm to 4mm.
[0075] Furthermore, a design that incorporates high and low frequency layering, frequency band partitioning, ground layer segmentation, and independent heat dissipation channels can be adopted to achieve multi-band anti-interference and high-power heat dissipation capabilities. Among these, the high-frequency layer uses small-area high-performance materials, while the low-frequency layer uses large-size low-cost substrates, balancing performance and cost control.
[0076] See Figure 1 , Figure 4 and Figure 5 The SIP subarray module is synthesized from a 2×2 array channel LCP substrate subarray antenna functional layer 1 and a glass substrate subarray RF signal processing layer 2. Within the LCP substrate subarray antenna functional layer 1, 2×2 wideband widebeam antenna elements 4 are integrated, connected to a broadband matching circuit on the bottom surface of the LCP substrate subarray antenna functional layer 1 via coupling feed. This broadband matching circuit employs various broadband hybrid design techniques, utilizing a feed balun 24, a compensation network 25, an impedance matching network 22, slotting, and multi-layer coupling to achieve full-band broadband operation from L to Ka frequency bands. This broadband matching circuit is vertically interconnected downwards via coupling to the power divider network 21 of the glass substrate subarray RF signal processing layer 2, enabling the transmission or reception of RF signals.
[0077] In the glass substrate subarray RF signal processing layer 2 of the SIP subarray module, the power divider network 21 is vertically interconnected to the active chip integration area 23 through glass vias. This area sequentially houses the transceiver chip 5, the amplitude / phase chip 6, and the driver chip 7, enabling RF link signal amplification, phase shifting, amplitude modulation, and transmission / reception. Simultaneously, the heat dissipation of these chips in the active chip integration area 23 within the glass substrate subarray RF signal processing layer 2 is rapidly dissipated through the high-efficiency heat dissipation microchannel 8, and then efficiently cooled by the cooling fan within the package 16. Furthermore, the high-efficiency heat dissipation microchannel 8 is also located in the FR4 substrate digital control and power layer 3, primarily for heat dissipation of the field-programmable gate array (FPGA) 10, digital signal processing circuit 11, and power supply circuit 12.
[0078] The aforementioned multi-band wide array SIP module phased array antenna includes a three-layer heterogeneous integrated structure comprising an antenna functional layer 1, a radio frequency signal processing layer 2, and a digital control and power supply layer 3. This three-layer heterogeneous integrated structure multi-band wide array SIP module phased array antenna can also be divided according to its implemented functions, including an antenna array layer, a radio frequency circuit layer, a beam control power supply layer, and a heat dissipation enhancement layer. Furthermore, the antenna array layer, radio frequency circuit layer, beam control power supply layer, and heat dissipation enhancement layer are integrated within a single package 16. The antenna array layer is directly integrated onto the upper surface of the RF circuit layer, forming a SIP subarray module with a channel size of 2×2=4. The antenna array surface is conformally bonded to the curved carrier using flexible LCP substrate technology or 3D printing. Employing a wideband widebeam antenna element 4, and through a comprehensive design including a feed balun 24, compensation network 25, impedance matching network 22, slotting, and multi-layer coupling, it can achieve full bandwidth operation in the L~Ka frequency band. Specifically, the wideband widebeam antenna element 4 uses the feed balun 24 to balance the transmit and receive signals, utilizes the compensation network 25 to suppress mutual coupling effects, combines with the impedance matching network 22 to achieve ultra-wideband signal transmission, and further enhances wideband performance through slotting and multi-layer coupling. The radio frequency (RF) circuit layer adopts a multi-layer vertical stacked structure. The RF circuit layer is made of RF glass substrate technology and uses glass through-hole (TGV) to create 2×2=4 array element RF channels. The transceiver chips 5, amplitude and phase chips 6, driver chips 7, and corresponding matching circuits of multiple channels are set in the active chip integration area 23 at the bottom of the RF circuit layer. They are integrated with the power divider network 21 at the top of the RF circuit layer in a high-density manner to realize the amplification, phase shifting, amplitude modulation, and power distribution or synthesis of RF signals. The channel amplitude and phase distribution required for beam scanning is realized according to the control code provided by the beam controller. Around the active chip integration area 23 at the bottom of the RF circuit layer, there is a BGA ball array 9 connected to the beam control power layer.
[0079] The wave-controlled power layer is fabricated on a low-frequency FR4 substrate, integrating a field-programmable gate array (FPGA) 10, a digital signal processing circuit 11, a power supply circuit 12, a control interface 13, a power supply interface 14, an RF interface 15, and a temperature monitoring unit to achieve interface communication with the user baseband 17, and to complete amplitude and phase control, power distribution, and timing control of the RF circuit according to user instructions. The control interface 13, power supply interface 14, and RF interface 15 of the wave-controlled power layer are connected one-to-one with the software interface 18, power interface 19, and signal interface 20 of the user baseband 17 to achieve interface communication.
[0080] The heat dissipation enhancement layer achieves thermal management through the coordinated partitioning of high-frequency power devices and low-frequency digital chips. The heat dissipation fan built into the package 16 can quickly dissipate the heat from the high-efficiency heat dissipation microchannels 8 set in the RF circuit layer and the wave control power layer, allowing the phased array antenna to work reliably for a long time. The SIP subarray module features high and low frequency layer separation, multi-band isolation, and zoned heat dissipation. Subarrays adopt a unified clock, synchronous control, and centralized power supply mode. Each layer achieves short-distance, low-loss connection through vertical interconnection. The short-distance, low-loss vertical interconnection method employs glass via (TGV) or microbump technology to achieve electrical connections between layers, thereby reducing signal transmission loss.
[0081] The specific implementation of the unified clock, synchronization control and centralized power supply mode between subarrays is as follows: a clock distribution network is used to provide a synchronization clock for each subarray, a centralized power management module is used to distribute power, and a digital control bus is used to realize the synchronization control between subarrays.
[0082] The antenna array layer and the radio frequency circuit layer are integrated into a single unit, forming a 2×2 SIP subarray module with a thickness of 1.2mm to 2mm. The thickness of the wave control power supply layer is 1.3mm to 2mm. The high- and low-frequency circuit-separated multi-band wide array SIP subarray module antenna uses a 4×4 base array, with the array element spacing designed according to the half-wavelength of the Ka band. The array size can be expanded from 4×4 to 64×64, and can be seamlessly cascaded to expand to 16×16, 32×32, and 64×64 wide arrays, achieving full-band grating-lobe-free operation. The overall thickness of the antenna array surface is 2.5mm to 4mm.
[0083] The multi-band wide-array SIP subarray phased array antenna provided in the above embodiment is, at its core, a high-frequency / low-frequency circuit-separated system-in-package (SIP) subarray module antenna. This phased array antenna adopts a top-down, multi-layered, vertically stacked integrated structure. Within a single package 16, the following are sequentially integrated: an antenna array layer (antenna functional layer 1), a radio frequency circuit layer (radio frequency signal processing layer 2), and a wave-controlled power supply layer (digital control and power supply layer 3). Ground layers and heat dissipation enhancement layers are integrated between and around each layer. Electrical interconnection between the layers is achieved through vertical interconnect structures (such as micro-bumps, copper pillars, or glass vias (TGV), forming an ultra-thin, high-density, fully functional phased array antenna.
[0084] In summary, through the above specific embodiments, this invention integrates multiple functions such as antenna, RF front-end, digital control, power supply, and heat dissipation into a millimeter-thick package, achieving "high-frequency / low-frequency separation", "vertical short-range interconnection", "zoned heat dissipation management" and "modular expansion", ultimately achieving the design goal of an ultra-thin, low-loss, highly reliable, and low-cost multi-band phased array antenna.
[0085] The present invention has been described and illustrated with particular reference to preferred embodiments. Those skilled in the art will understand that modifications in form and content may be made without departing from the spirit and scope of the invention.
Claims
1. A high-frequency / low-frequency circuit-separated multi-band wide-array SIP subarray module antenna, comprising a three-layer heterogeneous integrated structure bonded from top to bottom via a vertical interconnect structure, wherein the structure constitutes a fully functional active phased array antenna within a single package, characterized in that... The three-layer heterogeneous integrated structure includes: The antenna functional layer (1) is made of a flexible liquid crystal polymer substrate, on which N×N wideband wide beam antenna elements (4) are integrated in an array. The antenna elements cover the L~Ka band and realize wide-angle beam scanning through a comprehensive design of feeding balun (24), compensation network (25), impedance matching network (22), slotting and multi-layer coupling. The radio frequency signal processing layer (2) is located below the antenna functional layer (1) and is made of radio frequency glass substrate. The radio frequency glass substrate has vertical interconnection channels with glass through holes corresponding to the upper antenna units. The transceiver chip (5), amplitude and phase chip (6), driver chip (7) and power divider network (21) corresponding to each wideband wide beam antenna unit (4) channel are integrated on the radio frequency glass substrate through high-density integration process. The digital control and power layer (3) is located below the radio frequency signal processing layer (2). It is made of FR4 substrate and integrates a field programmable gate array (10), a digital signal processing circuit (11), a power supply circuit (12), a control interface (13), a power supply interface (14), a radio frequency interface (15), and a temperature sensor. The flexible liquid crystal polymer substrate, the radio frequency glass substrate, and the FR4 substrate are integrated sequentially using a specific bonding process that prioritizes high frequencies over low frequencies. First, the antenna functional layer (1) is bonded to the 2×2 array channels of the radio frequency signal processing layer (2) to form a SIP subarray module. Then, several SIP subarray modules are bonded to the digital control and power supply layer (3) to complete the construction of a high-frequency / low-frequency circuit-separated multi-band wide array SIP subarray module antenna. Specifically, the bonded LCP substrate antenna functional layer (1), the glass substrate radio frequency... The signal processing layer (2), the FR4 substrate digital control and power supply layer (3), the LCP substrate antenna functional layer (1) and the glass substrate RF signal processing layer (2) of the three-layer heterogeneous integrated structure are connected to form a SIP subarray module through a 2×2 array channel. Each SIP subarray module uses a BGA ball array (9) as an external circuit interface. Different numbers of SIP subarray modules are spliced together, and then the BGA ball array (9) of each SIP subarray module is bonded to the FR4 substrate digital control and power supply layer 3 to form a phased array antenna with different performance indicators.
2. The antenna according to claim 1, characterized in that, Within the SIP subarray module, a power and noise isolation structure is provided between the radio frequency signal processing layer (2) and the digital control and power supply layer (3). The high-frequency power region of the radio frequency signal processing layer (2) and the low-frequency digital region of the digital control and power supply layer (3) are partitioned in the layout and are connected to an integrated heat dissipation channel optimized by thermal simulation.
3. The antenna according to claim 1 or 2, characterized in that, The specific bonding process sequence of high frequency followed by low frequency employs a high-low temperature gradient differential hot-pressing bonding process, with the following specific steps: S1. A wideband wide beam antenna unit (4) and a microstrip feed line are precisely fabricated on a flexible liquid crystal polymer substrate, and an impedance matching network (22), a feeding balun (24), a compensation network (25) are completed and integrated with the slotted coupling structure. S2. High-precision glass vias are etched on the radio frequency glass substrate, and active chip integration area (23) is formed by wafer-level flip-chip packaging process to form a whole radio frequency front-end wafer; the active chip integration area (23) contains transceiver chip (5), amplitude and phase chip (6), driver chip (7) and related matching circuits, which are arranged in sequence. S3. Using a gradient hot-pressing process with low-temperature pre-pressing and high-temperature shaping, the antenna substrate, antenna functional layer (1), and RF front-end wafer (RF front-end wafer) are bonded for the first time to avoid thermal deformation of the high-frequency fine structure, ensure vertical interconnect alignment accuracy, and form a SIP subarray module; S4. On the FR4 substrate, complete the integrated layout of the field programmable gate array (10), digital signal processing circuit (11), power supply circuit (12), control interface (13), power supply interface (14), radio frequency interface (15) and temperature sensing circuit; S5. Using a medium-temperature stable bonding process, several SIP subarray modules and a whole FR4 low-frequency substrate (digital control and power layer (3)) are stacked in three dimensions to construct phased array antennas of different sizes and performance indicators.
4. The antenna according to claim 1, characterized in that, Multiple SIP subarray modules are cascaded through an inter-subarray interconnection network to expand into a larger-scale phased array antenna; The interconnection network between subarrays includes a global clock distribution network that provides a synchronous clock for all subarrays, a centralized power bus that uniformly distributes power, and a digital control bus that enables synchronous transmission of wave control signals.
5. The antenna according to claim 1, characterized in that, It includes the multiple high-frequency / low-frequency circuit-separated multi-band wide array SIP subarray modules cascaded through an inter-subarray interconnection network as described in claim 4.
6. The antenna as described in claim 1 or 5, characterized in that, The N×N array element is a 2×2 array element, and the glass through-hole vertical interconnection channel is 4, which are respectively connected to the 2×2 broadband wide beam antenna unit (4).
7. The antenna according to claim 1, characterized in that, The antenna is based on a 4×4 array, with the array element spacing designed according to half-wavelength of the Ka band. The array size can be expanded in the range of 4×4 to 64×64, and can be seamlessly cascaded to a wide array of 16×16, 32×32, and 64×64, achieving full-band grating-free operation. The overall thickness of the antenna array is 2.5mm to 4mm.
8. The antenna according to claim 1, characterized in that, The antenna functional layer (1) and the radio frequency signal processing layer (2) adopt an integrated anti-interference heat dissipation architecture with high-frequency independent ground layer segmentation, frequency band partition isolation, and heat dissipation channel partition coupling; the antenna functional layer (1) and the radio frequency signal processing layer (2) use small-area high-performance radio frequency materials to ensure low loss characteristics of multiple frequency bands; the digital control and power supply layer (3) uses a large-size low-cost substrate to achieve large-scale circuit integration, and through heterogeneous material partition matching design, the overall cost and weight of the array are greatly reduced without sacrificing electrical performance.
9. The antenna according to claim 2, characterized in that, The radio frequency signal processing layer (2) integrates a transceiver chip (5), an amplitude and phase chip (6), and a driver chip (7), and uses GaAs and GaN high-performance semiconductor materials. The radio frequency signal processing layer (2) is equipped with dedicated isolation shielded micro-strip line trenches, and high-frequency signals are limited to transmission in independent trench areas. With the help of a local grounding shielding structure, high-frequency crosstalk is completely isolated, ensuring the fidelity of multi-band signals and low-loss transmission characteristics.
10. The antenna according to claim 1, characterized in that, The digital control and power layer (3) integrates a field-programmable gate array (10), a digital signal processing circuit (11), and a power supply circuit (12), and adopts CMOS technology to reduce integration costs. The digital control and power layer (3) achieves isolated signal interaction with the radio frequency signal processing layer (2) through anti-interference differential LVDS and JESD204B high-speed serial interface, and with timing error correction logic, realizes high-speed, synchronous, and low-error transmission of high and low frequency cross-layer signals.
