Energy storage, release and residual pressure fast discharge circuit and method

Abstract

The present application relates to the field of power management. More particularly, the present application relates to a kind of energy storage, energy release and residual voltage fast discharge circuit and method.The circuit includes energy storage power supply branch, detection control branch and residual voltage discharge branch, wherein the energy storage power supply branch is used to store the electrical energy of input power supply, and power supply is provided to processor module;The detection control branch is used to detect energy storage voltage, and controls residual voltage discharge branch according to the energy storage voltage;The residual voltage discharge branch is used to discharge energy storage voltage according to the control result of detection control branch.Compared with prior art, by energy storage voltage detection, power failure power supply and stage residual voltage discharge, the present application realizes the preferential use of super capacitor effective electrical energy and the continuous discharge of residual electrical energy.

Description

Technical Field

[0001] This invention relates to the field of power management. More specifically, this invention relates to a circuit and method for storing, discharging, and rapidly releasing residual voltage. Background Technology

[0002] In board-level systems such as IP communication hosts, industrial control, and data centers, multiple communication motherboards or functional boards are typically deployed in the same chassis and interconnected via a backplane bus. Due to requirements for business continuity, system maintainability, and deployment flexibility, these boards generally need to support hot-swapping. When a board is hot-swapped or the system experiences an abnormal power outage, the processor module on the board needs a brief period of power interruption (a few seconds) to perform protective actions such as halting ongoing read / write operations, saving critical operational data, and writing cached data to disk. This prevents file system corruption, operating system crashes, or permanent loss of core business data due to sudden power failure. To meet this requirement, the industry commonly uses supercapacitors deployed on the carrier board as backup energy storage components. When the main power supply is lost, the supercapacitor immediately takes over the power supply, providing the processor module with brief but critical power protection during power outages.

[0003] However, residual voltage in supercapacitor power supply schemes can easily lead to abnormal startup timing of DC-DC power chips on the carrier board and cause equipment to malfunction. Taking Chinese patent application CN106445057A as an example, while this scheme achieves automatic detection and rapid discharge of residual voltage from capacitive loads at the power output, it cannot flexibly adjust according to the different undervoltage protection thresholds of specific processor modules, resulting in insufficient adaptability. Similarly, taking Chinese patent application CN115706406A as an example, this scheme does not require an external power-down trigger signal and can adapt to power supply applications with a wide voltage range; however, it also does not address the discharge of residual voltage at the input of the load device.

[0004] Therefore, the existing technology mainly suffers from problems such as untimely discharge of residual voltage from supercapacitors, fixed voltage detection threshold, and inability to flexibly adapt to the minimum operating voltage of different processor modules. Summary of the Invention

[0005] To address the aforementioned technical problems of untimely residual voltage discharge in supercapacitors and the fixed voltage detection threshold, which prevents flexible adaptation to the minimum operating voltage of different processor modules, this invention provides solutions in the following aspects.

[0006] In a first aspect, the present invention discloses a circuit for storing, discharging energy, and rapidly releasing residual voltage, comprising an energy storage power supply branch, a detection and control branch, and a residual voltage release branch, wherein,

[0007] The energy storage power supply branch is used to store electrical energy from the input power supply and to supply power to the processor module; The detection and control branch is used to detect the energy storage voltage and control the residual voltage discharge branch according to the energy storage voltage. The residual pressure relief branch is used to release the energy storage voltage based on the control result of the detection and control branch.

[0008] Preferably, the energy storage power supply branch, the detection and control branch, and the residual voltage discharge branch are specifically as follows: The energy storage power supply branch includes a charging diode, a supercapacitor, and a residual energy discharge resistor. The charging diode is connected to the input power supply and the supercapacitor. The energy storage terminal of the supercapacitor is connected to the power supply terminal of the processor module. The residual energy discharge resistor is connected between the energy storage terminal and the power supply ground. The detection and control branch includes a voltage detection chip, a first voltage divider resistor, a second voltage divider resistor, a pull-up resistor, a transistor, and a first hole-channel field-effect transistor. The first voltage divider resistor and the second voltage divider resistor are connected to the energy storage terminal to form a detection voltage. The residual pressure discharge branch includes a second hole-channel field-effect transistor, a first control resistor, and a second control resistor. The first hole-channel field-effect transistor, the first control resistor, and the second control resistor are connected between the detection and control branch and the second hole-channel field-effect transistor, and are used to control the second hole-channel field-effect transistor to discharge the residual energy of the supercapacitor.

[0009] Preferably, the energy storage power supply branch further includes a power supply diode and a grounding resistor, specifically: The input terminal of the power supply diode is connected to the input power supply, and the output terminal is connected to the detection and control branch and the residual voltage discharge branch, respectively. The grounding resistor is connected between the output terminal of the power supply diode and the power ground.

[0010] Preferably, the energy storage power supply branch further includes a first voltage equalizing resistor and a second voltage equalizing resistor.

[0011] Preferably, it further includes: The supercapacitor includes a first supercapacitor and a second supercapacitor connected in series. The first voltage equalizing resistor is connected in parallel with the first supercapacitor, and the second voltage equalizing resistor is connected in parallel with the second supercapacitor.

[0012] Preferably, the voltage detection chip has an open-drain output terminal, wherein the open-drain output terminal is connected to the base of the transistor via the pull-up resistor.

[0013] Preferably, it further includes a driving resistor and a bias resistor, specifically: The driving resistor is connected between the gate control node of the first hole-channel field-effect transistor and the second hole-channel field-effect transistor. The bias resistor is connected between the gate and source of the first hole-channel field-effect transistor.

[0014] Compared to existing technologies, which rely on supercapacitors to store energy and supply power to the processor module during normal power supply, this technology uses voltage divider detection and multi-stage device control to manage the discharge state when the stored energy voltage changes. This ensures that while retaining effective stored energy for the processor module, residual energy that is no longer suitable for power supply is rapidly and continuously discharged. Combined with input isolation, series supercapacitor voltage equalization, and gate bias design, this technology reduces ineffective energy consumption and device malfunctions, and improves the stability and reliability of power-down power supply, residual voltage elimination, and restart processes.

[0015] In a second aspect, the present invention discloses a method for storing, releasing energy, and rapidly discharging residual pressure, the method comprising: The detection threshold is determined based on the minimum operating voltage of the processor module; When the input power supply is normal, the energy storage unit is charged and the energy storage voltage of the energy storage unit is detected; When the input power supply stops, if the energy storage voltage is higher than the minimum operating voltage of the processor module, the energy storage unit is used to maintain the power-down protection operation. When the energy storage voltage drops to the minimum operating voltage of the processor module, the power-down protection operation is stopped, and the residual energy of the energy storage unit is discharged at full power. When the energy storage voltage drops to a level insufficient to maintain voltage detection and is lower than the startup voltage of the DC-DC converter chip on the carrier board, the remaining electrical energy of the energy storage unit is discharged.

[0016] Preferably, the resistance ratio of the first voltage divider resistor and the second voltage divider resistor is determined based on the minimum operating voltage of the processor module and the detection threshold of the voltage detection chip, so that when the energy storage voltage of the supercapacitor reaches the minimum operating voltage of the processor module, the detection voltage reaches the detection threshold.

[0017] Preferably, it further includes: When the detection voltage is higher than the detection threshold, the open-drain output terminal is cut off, and the pull-up resistor pulls the base potential of the transistor high until the transistor is turned on. When the detection voltage is lower than the detection threshold, the open-drain output terminal is turned on, and the base potential of the transistor is pulled down to the point where the transistor is cut off.

[0018] The beneficial effects of this invention are as follows: after the input power supply stops, the supercapacitor is used first to maintain power-down protection; when the energy storage voltage reaches the set threshold, full-power discharge is initiated; and the remaining power continues to be consumed after the detection function fails. Combined with voltage divider detection, open-drain control, two-stage field-effect transistor drive, series supercapacitor voltage equalization, and input isolation, it can balance power-down protection duration, residual voltage elimination speed, and restart reliability. Attached Figure Description

[0019] The above and other objects, features, and advantages of exemplary embodiments of the present invention will become readily apparent upon reading the following detailed description with reference to the accompanying drawings. In the drawings, several embodiments of the invention are illustrated by way of example and not limitation, and like or corresponding reference numerals denote like or corresponding parts, wherein: Figure 1 This is a schematic diagram of a circuit structure for storing, discharging energy, and rapidly releasing residual pressure in Embodiment 1; Figure 2 This is the working logic diagram of the normal power supply state of the input power in Embodiment 1; Figure 3 This is a schematic diagram of the supercapacitor supplying power to the processor module in Embodiment 1; Figure 4 This is the control logic diagram for supercapacitor residual voltage discharge in Example 1; Figure 5 This is a flowchart of the energy storage, release, and rapid residual pressure relief method in Example 2. Detailed Implementation

[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0022] Example 1 like Figure 1 As shown, this embodiment discloses a circuit for energy storage, discharging, and rapid residual voltage discharge, including an energy storage power supply branch, a detection and control branch, and a residual voltage discharge branch, wherein... The energy storage power supply branch is used to store electrical energy from the input power supply and to supply power to the processor module; The detection and control branch is used to detect the energy storage voltage and control the residual voltage discharge branch according to the energy storage voltage. The residual pressure relief branch is used to release the energy storage voltage based on the control result of the detection and control branch.

[0023] In this embodiment, the energy storage power supply branch, the detection and control branch, and the residual voltage discharge branch cooperate to form a complete power management path of energy storage, power supply during power outages, and residual voltage discharge.

[0024] like Figure 2 As shown, under normal power supply conditions, the energy storage power supply branch provides working power to the processor module on one hand and stores energy in the supercapacitor on the other. The detection and control branch determines the current voltage state based on the energy storage voltage of the supercapacitor and controls the residual voltage discharge branch to remain closed, so that the stored energy is mainly used for the operation of the processor module and the charging of the supercapacitor.

[0025] like Figure 3 As shown, after the input power supply stops, the supercapacitor provides power to the processor module to maintain the processor module in performing power-down protection operations such as stopping read / write and saving critical data. After the energy storage voltage of the supercapacitor continues to drop and enters below the minimum operating voltage of the processor module, the detection control branch switches the control state to establish a discharge path in the residual voltage discharge branch to consume the residual power that can no longer be effectively utilized by the processor module.

[0026] like Figure 4 As shown, when the voltage of the supercapacitor drops further to a level insufficient to maintain the normal operation of the detection and control branch, the remaining energy is consumed by the remaining energy discharge resistor R4, which is continuously connected to the energy storage terminal.

[0027] Through the above structure, the effective energy storage and ineffective residual energy of the supercapacitor are distinguished and processed. The energy stored in the supercapacitor is used first for power failure protection when the processor module can use it, and then it is transferred to the residual voltage discharge process when the processor module can no longer be used effectively.

[0028] Preferably, the energy storage power supply branch, the detection and control branch, and the residual voltage discharge branch are as follows: The energy storage power supply branch includes a power supply diode D2, a supercapacitor, and a residual energy discharge resistor R4. The power supply diode D2 is connected to the input power supply and the supercapacitor. The energy storage terminal of the supercapacitor is connected to the power supply terminal of the processor module. The residual energy discharge resistor R4 is connected between the energy storage terminal and the power ground GND. The detection and control branch includes a voltage detection chip, a first voltage divider resistor R5, a second voltage divider resistor R6, a pull-up resistor R7, a transistor Q1, and a first hole-channel field-effect transistor Q2. The first voltage divider resistor R5 and the second voltage divider resistor R6 are connected to the energy storage terminal to form a detection voltage. The residual voltage discharge branch includes a second hole-channel field-effect transistor Q3, a first control resistor R9, and a second control resistor R10. The first hole-channel field-effect transistor Q2, the first control resistor R9, and the second control resistor R10 are connected between the detection and control branch and the second hole-channel field-effect transistor Q3, and are used to control the second hole-channel field-effect transistor Q3 to discharge the residual energy of the supercapacitor.

[0029] Among them, the charging diode D2 is used to form a charging path from the input power supply to the supercapacitor; the first voltage divider resistor R5 and the second voltage divider resistor R6 are used to form a detection voltage based on the energy storage voltage; the voltage detection chip controls the transistor Q1 according to the relationship between the detection voltage and the detection threshold, the transistor Q1 further controls the first hole-type channel field-effect transistor Q2, and controls the conduction state of the second hole-type channel field-effect transistor Q3 through the driving resistor R11 and the control resistors R9 and R10.

[0030] In this embodiment, the power supply diode D2 is connected to the input power supply and the supercapacitor, which is used to form a charging path from the input power supply to the supercapacitor when the input power supply is normally supplying power, and to restrict the electrical energy in the supercapacitor from flowing back to the input power supply side.

[0031] The energy storage terminal of the supercapacitor is connected to the power supply terminal of the processor module. When the input power supply is normal, it provides operating power to the processor module and stores energy in the supercapacitor via the power supply diode D2. When the input power supply stops, the supercapacitor switches from an energy storage state to a discharge state and supplies energy to the processor module through the energy storage terminal. The load power supply diode D3 forms a unidirectional path for power supply from the supercapacitor to the processor module.

[0032] The residual energy discharge resistor R4 is connected between the energy storage terminal and the power ground GND. Therefore, even when the energy storage voltage is low or the detection and control branch stops working, the residual energy discharge resistor R4 can still form a passive discharge path from the energy storage terminal to the power ground GND.

[0033] The first voltage divider resistor R5 and the second voltage divider resistor R6 are connected to the energy storage terminal to divide the stored energy voltage to form a detection voltage. The voltage detection chip detects the detection voltage and outputs a corresponding control state based on the relationship between the detection voltage and a detection threshold. The pull-up resistor R7 and the transistor Q1 are used to convert the control state output by the voltage detection chip into a control state for the first hole-channel field-effect transistor Q2.

[0034] When the detection voltage is higher than the detection threshold, the second hole-channel field-effect transistor Q3 remains off; when the detection voltage is lower than the detection threshold, the second hole-channel field-effect transistor Q3 is turned on, and the supercapacitor's energy storage terminal is connected to the power ground GND through the second hole-channel field-effect transistor Q3 and the residual voltage discharge resistor R12, thereby forming a residual voltage discharge path to discharge the residual electrical energy in the supercapacitor.

[0035] Preferably, the energy storage power supply branch further includes a power supply diode D1 and a grounding resistor, specifically: The input terminal of the power supply diode D1 is connected to the input power supply, and the output terminal is connected to the detection and control branch and the residual voltage discharge branch respectively. The grounding resistor is connected between the output terminal of the power supply diode D1 and the power ground GND.

[0036] In this embodiment, the input terminal of the power supply diode D1 is connected to the input power supply, and the output terminal is connected to the detection and control branch and the residual voltage discharge branch respectively, so as to provide control potential to the detection and control branch and the residual voltage discharge branch.

[0037] In one implementation, when the input power supply is normal, the power supply diode D1 is turned on, and the input power supply provides control voltage to the detection and control section through the power supply diode D1, so that the detection and control branch is in a state that can work normally.

[0038] In another implementation, after the input power supply stops supplying power, the power supply state of the external input power supply side changes. The power supply diode D1 can isolate the input power supply side from the control circuit, reducing the possibility of the stored energy in the supercapacitor flowing in reverse to the input power supply side.

[0039] Preferably, the energy storage power supply branch further includes a first voltage equalizing resistor R1 and a second voltage equalizing resistor R3.

[0040] Preferably, it further includes: The supercapacitor includes a first supercapacitor C2 and a second supercapacitor C4 connected in series. The first voltage equalizing resistor R1 is connected in parallel with the first supercapacitor C2, and the second voltage equalizing resistor R3 is connected in parallel with the second supercapacitor C4.

[0041] In this embodiment, the input power supply charges the first supercapacitor C2 and the second supercapacitor C4, which are connected in series, via the power supply diode D2. During the charging process, the first voltage equalization resistor R1 and the second voltage equalization resistor R3 are connected in parallel with their respective supercapacitors, so that the first supercapacitor C2 and the second supercapacitor C4 each have an independent voltage equalization path.

[0042] Because the first supercapacitor C2 and the second supercapacitor C4 may have differences in capacitance, leakage current, and other parameters during actual operation, the voltage across the two supercapacitors may differ when directly charged in series. By setting the first voltage-equalizing resistor R1 and the second voltage-equalizing resistor R3 respectively, the terminal voltages of the two supercapacitors can be passively adjusted, making the charging voltages of the two supercapacitors tend to be balanced.

[0043] In one implementation of this embodiment, when the supercapacitor supplies power to the processor module, the first supercapacitor C2 and the second supercapacitor C4 jointly release the stored electrical energy; at the same time, the first voltage equalizing resistor R1 and the second voltage equalizing resistor R3 continue to consume a portion of the electrical energy on their respective supercapacitors.

[0044] Preferably, the voltage detection chip has an open-drain output terminal, wherein the open-drain output terminal is connected to the base of the transistor Q1 via the pull-up resistor R7.

[0045] In this embodiment, the first voltage divider resistor R5 and the second voltage divider resistor R6 divide the energy storage voltage of the supercapacitor, forming a detection voltage at the connection node of the first voltage divider resistor R5 and the second voltage divider resistor R6. The detection voltage is input to the detection terminal of the voltage detection chip.

[0046] When the detection voltage is higher than the detection threshold, the open-drain output terminal is cut off, and the pull-up resistor R7 pulls up the base potential of transistor Q1, causing transistor Q1 to conduct.

[0047] When the detection voltage is lower than the detection threshold, the open-drain output terminal is turned on, pulling down the base potential of the transistor Q1 and turning off the transistor Q1.

[0048] Therefore, the voltage detection chip generates different control levels through the on and off states of the open-drain output terminal, and transmits the detection results to the subsequent control circuit via pull-up resistor R7 and transistor Q1.

[0049] The voltage detection chip can share the same power supply as the energy storage voltage, allowing the chip to operate while simultaneously detecting the supercapacitor's energy storage voltage. Because the voltage detection chip operates at a relatively low current, the energy consumption of the supercapacitor's energy storage branch is minimal.

[0050] Preferably, it further includes a driving resistor R11 and a bias resistor R8, specifically: The driving resistor R11 is connected between the gate control node of the first hole-channel field-effect transistor Q2 and the second hole-channel field-effect transistor Q3, and is used to transmit the on or off state of the first hole-channel field-effect transistor Q2 to the gate control node of the second hole-channel field-effect transistor Q3.

[0051] The bias resistor R8 is connected between the gate and source of the first hole-type channel field-effect transistor Q2, and is used to provide a defined gate-source potential relationship for the first hole-type channel field-effect transistor Q2 when the transistor Q1 is turned off.

[0052] In this embodiment, when the detected voltage is higher than the detection threshold, the open-drain output of the voltage detection chip is cut off, transistor Q1 is turned on, and the first hole-channel field-effect transistor Q2 is turned on. The first hole-channel field-effect transistor Q2 controls the gate control node of the second hole-channel field-effect transistor Q3 through the driving resistor R11, so that the gate potential of the second hole-channel field-effect transistor Q3 approaches its source potential, thereby maintaining it in the off state.

[0053] When the detected voltage is lower than the detection threshold, the open-drain output of the voltage detection chip is turned on, and transistor Q1 is turned off. Bias resistor R8 keeps the first hole-channel MOSFET Q2 off. At this time, the first control resistor R9 and the second control resistor R10 work together on the gate control node of the second hole-channel MOSFET Q3, causing the gate potential of the second hole-channel MOSFET Q3 to be lower than its source potential, thus turning it on.

[0054] In this embodiment, the drain of the second hole-channel field-effect transistor Q3 is connected to the power ground GND via the residual voltage discharge resistor R12. After the second hole-channel field-effect transistor Q3 is turned on, the residual electrical energy in the supercapacitor is discharged to the power ground GND through the second hole-channel field-effect transistor Q3 and the residual voltage discharge resistor R12.

[0055] The figure shows control capacitor C1 and control capacitor C3. Control capacitor C1 is connected to the gate control node corresponding to the first hole-channel field-effect transistor Q2, and control capacitor C3 is connected to the gate control node corresponding to the second hole-channel field-effect transistor Q3.

[0056] The operation of the energy storage, energy release, and residual voltage rapid discharge circuit in this embodiment includes a normal energy storage stage, a power failure protection stage, a residual voltage discharge stage, and a remaining energy discharge stage.

[0057] (1) During the normal energy storage phase, the input power supply provides working power to the processor module and charges the supercapacitor through the power supply diode D2; the first supercapacitor C2 and the second supercapacitor C4 are equalized through their respective equalizing resistors; the detection control branch forms a detection voltage based on the energy storage voltage and controls the second hole-type channel field-effect transistor Q3 to remain off when the detection voltage is higher than the detection threshold.

[0058] Specifically, when the detection voltage is higher than the detection threshold, the open-drain output terminal of the voltage detection chip is cut off, the pull-up resistor R7 pulls up the base potential of transistor Q1, transistor Q1 turns on and controls the first hole-channel field-effect transistor Q2 to turn on; the first hole-channel field-effect transistor Q2, through the drive resistor R11, makes the gate potential of the second hole-channel field-effect transistor Q3 approach its source potential, thereby keeping the second hole-channel field-effect transistor Q3 off.

[0059] (2) During the power failure protection phase, the input power supply stops supplying power, and the supercapacitor provides power to the processor module. When the energy storage voltage is higher than the minimum operating voltage of the processor module, the residual voltage discharge branch remains closed, so that the effective energy in the supercapacitor is mainly used for the processor module to perform the power failure protection operation.

[0060] After the input power supply stops, the voltage at the energy storage terminal of the supercapacitor begins to drop. However, if the detection voltage is still higher than the detection threshold, the open-drain output of the voltage detection chip remains off, while transistor Q1 and the first hole-channel MOSFET Q2 remain on, and the second hole-channel MOSFET Q3 remains off. Therefore, the energy in the supercapacitor continues to supply the processor module to complete power-down protection operations such as stopping read / write operations and saving critical data, while the residual voltage discharge branch does not conduct prematurely.

[0061] (3) During the residual voltage discharge stage, after the energy storage voltage drops to the minimum operating voltage of the processor module, the detection voltage reaches the detection threshold. When the detection voltage is further lower than the detection threshold, the voltage detection chip changes the open-drain output state, turns off the transistor Q1 and the first hole-type channel field-effect transistor Q2, and controls the second hole-type channel field-effect transistor Q3 to conduct through the first control resistor R9 and the second control resistor R10, thereby discharging the residual energy in the supercapacitor.

[0062] (4) During the residual energy discharge stage, when the energy storage voltage is further reduced to a level that is insufficient to maintain the normal operation of the voltage detection chip and is lower than the start-up voltage of the DC-DC converter chip on the carrier board, the residual energy discharge resistor R4 is used to continue to consume the residual energy in the supercapacitor.

[0063] Through the above-mentioned transition, the electrical energy in the supercapacitor is utilized and discharged according to the actual needs of the processor module, avoiding premature discharge when the processor module still needs stored energy, and preventing the long-term retention of ineffective residual electrical energy after the power failure protection ends.

[0064] Example 2 like Figure 5 As shown, this embodiment discloses a method for storing, discharging, and rapidly releasing residual voltage, used to implement the energy storage, discharging, and rapid residual voltage release circuit described in Embodiment 1 of the present invention. The method includes: The detection threshold is determined based on the minimum operating voltage of the processor module; In this embodiment, the minimum operating voltage at which the processor module can continue to perform power-down protection operations is determined. Then, based on the detection threshold of the voltage detection chip used, the resistance relationship between the first voltage divider resistor R5 and the second voltage divider resistor R6 is determined so that when the energy storage voltage of the supercapacitor drops to the minimum operating voltage of the processor module, the detection voltage formed by the first voltage divider resistor R5 and the second voltage divider resistor R6 reaches the detection threshold of the voltage detection chip.

[0065] By using the above method, the actual lower limit of the processor module's operating voltage is mapped to the detection threshold of the voltage detection chip, so that the residual voltage discharge switching point corresponds to the actual working capacity of the processor module.

[0066] When the input power supply is normal, the energy storage unit is charged and the energy storage voltage of the energy storage unit is detected; In this embodiment, the input power supply charges the supercapacitor via the power supply diode D2, while simultaneously providing operating power to the processor module. The first supercapacitor C2 and the second supercapacitor C4 are voltage-equalized through their respective voltage-equalizing resistors.

[0067] Meanwhile, the first voltage divider resistor R5 and the second voltage divider resistor R6 form a detection voltage based on the energy storage voltage of the supercapacitor, and the voltage detection chip detects the detection voltage.

[0068] When the detected voltage is higher than the detection threshold, the open-drain output of the voltage detection chip is cut off, the pull-up resistor R7 turns on the transistor Q1, the first hole-channel field-effect transistor Q2 turns on, and the second hole-channel field-effect transistor Q3 remains off.

[0069] Therefore, when the input power supply is normal, the supercapacitor can continuously store energy, and the residual voltage discharge path is in a closed state.

[0070] When the input power supply stops, if the energy storage voltage is higher than the minimum operating voltage of the processor module, the energy storage unit is used to maintain the power-down protection operation. In this embodiment, when a hot-plugging or abnormal power failure occurs, the input power supply stops providing normal operating power to the processor module, and the supercapacitor supplies power to the processor module through the energy storage terminal.

[0071] At this time, since the energy storage voltage is still higher than the minimum operating voltage of the processor module and the detection voltage is still higher than the detection threshold, the open-drain output terminal of the voltage detection chip remains off, transistor Q1 remains on, the first hole-type channel field-effect transistor Q2 remains on, and the second hole-type channel field-effect transistor Q3 remains off.

[0072] The processor module continues to perform power-loss protection operations using the power provided by the supercapacitor, including stopping read and write operations, saving critical data, and ending the current business.

[0073] During this phase, the main available energy in the supercapacitor is used to maintain the processor module's power-down protection operation, while the residual voltage discharge branch remains closed to avoid prematurely consuming the stored energy required for power-down protection.

[0074] When the energy storage voltage drops to the minimum operating voltage of the processor module, the power-down protection operation is stopped, and the residual energy of the energy storage unit is discharged at full power. In this embodiment, as the processor module continues to use the stored energy in the supercapacitor, the stored energy voltage of the supercapacitor gradually decreases.

[0075] When the energy storage voltage reaches the minimum operating voltage of the processor module, the processor module has completed or is about to complete the power-down protection operation; at this time, the detection voltage corresponding to the energy storage voltage reaches the detection threshold of the voltage detection chip.

[0076] As the energy storage voltage decreases further, the detection voltage drops below the detection threshold, the open-drain output terminal of the voltage detection chip is turned on, and the base potential of transistor Q1 is pulled down, causing transistor Q1 to be turned off.

[0077] After transistor Q1 is turned off, the first hole-channel field-effect transistor Q2 is turned off under the action of bias resistor R8. The first hole-channel field-effect transistor Q2 no longer provides the control potential to turn off the second hole-channel field-effect transistor Q3 through the drive resistor R11.

[0078] Under the combined action of the first control resistor R9 and the second control resistor R10, the gate potential of the second hole-type channel field-effect transistor Q3 is lower than its source potential, and the second hole-type channel field-effect transistor Q3 is turned on, thereby forming a discharge path between the supercapacitor energy storage terminal and the power supply ground GND to discharge the residual electrical energy in the supercapacitor.

[0079] When the energy storage voltage drops to a level insufficient to maintain voltage detection and is lower than the startup voltage of the DC-DC converter chip on the carrier board, the remaining electrical energy of the energy storage unit is discharged.

[0080] In this embodiment, as the supercapacitor continues to discharge, the energy storage voltage further decreases. When the energy storage voltage is insufficient to maintain the normal operation of the voltage detection chip, the detection and control branch loses its normal active detection capability.

[0081] In one specific embodiment, the minimum operating voltage of the voltage detection chip is 2.5V. When the energy storage voltage of the supercapacitor drops to a level insufficient to maintain the normal operation of the voltage detection chip, the energy storage voltage is lower than the startup voltage of the DC-DC converter chip on the carrier board. Therefore, this energy storage voltage will not trigger the DC-DC converter chip on the carrier board to restart. At this time, the remaining energy discharge resistor R4 continues to discharge the remaining energy in the supercapacitor.

[0082] At this point, the energy storage voltage is lower than the startup voltage of the DC-DC converter chip on the carrier board, and the energy storage voltage cannot enable the DC-DC converter chip to start normally.

[0083] Since the residual energy discharge resistor R4 is always connected between the energy storage terminal and the power supply ground GND, it can still provide a passive discharge path to continue discharging the residual energy in the supercapacitor even when the voltage detection chip cannot continue to work normally.

[0084] Meanwhile, the first equalizing resistor R1 and the second equalizing resistor R3 can also consume the remaining electrical energy on the first supercapacitor C2 and the second supercapacitor C4, respectively.

[0085] Preferably, the resistance ratio of the first voltage divider resistor R5 and the second voltage divider resistor R6 is determined according to the minimum operating voltage of the processor module and the detection threshold of the voltage detection chip, so that when the energy storage voltage of the supercapacitor reaches the minimum operating voltage of the processor module, the detection voltage reaches the detection threshold.

[0086] In this embodiment, the minimum operating voltage of the processor module is determined, the detection threshold of the voltage detection chip is determined, and then the resistance relationship between the first voltage divider resistor R5 and the second voltage divider resistor R6 is adjusted.

[0087] By adjusting the resistance relationship, the correspondence between the energy storage terminal voltage and the detection voltage can be changed, so that the minimum operating voltage corresponding to different processor modules can be mapped to the detection threshold of the same voltage detection chip.

[0088] In one implementation, when the minimum operating voltage changes due to the replacement of the processor module, only the resistance relationship between the first voltage divider resistor R5 and the second voltage divider resistor R6 can be adjusted without changing the power structure of the supercapacitor and the residual voltage discharge branch, thus enabling the same circuit to be adapted to different processor modules.

[0089] Preferably, the method further includes: When the detection voltage is higher than the detection threshold, the open-drain output terminal is cut off, and the pull-up resistor R7 pulls the base potential of transistor Q1 high until transistor Q1 is turned on. When the detection voltage is lower than the detection threshold, the open-drain output terminal is turned on, and the base potential of transistor Q1 is pulled down to the point where transistor Q1 is turned off.

[0090] In this embodiment, the switching between the two operating states of transistor Q1 can be achieved by detecting the on and off states of the open-drain output terminal of the voltage detection chip, and the operating states of the first hole-channel field-effect transistor Q2 and the second hole-channel field-effect transistor Q3 can be further controlled.

[0091] In one implementation, the voltage detection chip uses a low-power voltage detection device, which reduces the energy consumption of the supercapacitor's energy storage by the detection and control branch. At the same time, by utilizing the control method formed by the open-drain output terminal and the pull-up resistor R7, the parameters of the pull-up resistor R7 can be adjusted according to the actual operating voltage, thereby adapting to different control voltage conditions.

[0092] In the description of this specification, "multiple" means at least two, such as two, three or more, etc., unless otherwise expressly and specifically defined.

[0093] While this specification has shown and described numerous embodiments of the invention, it will be apparent to those skilled in the art that such embodiments are provided by way of example only. Many modifications, alterations, and alternatives will occur to those skilled in the art without departing from the spirit and essence of the invention. It should be understood that various alternatives to the embodiments of the invention described herein may be employed in the practice of this invention.

Claims

1. A circuit for storing, discharging energy, and rapidly releasing residual voltage, characterized in that, This includes energy storage power supply branches, detection and control branches, and residual voltage discharge branches, among which, The energy storage power supply branch is used to store electrical energy from the input power supply and to supply power to the processor module; The detection and control branch is used to detect the energy storage voltage and control the residual voltage discharge branch according to the energy storage voltage. The residual pressure relief branch is used to release the energy storage voltage based on the control result of the detection and control branch.

2. The energy storage, discharging, and residual voltage rapid discharge circuit according to claim 1, characterized in that, Specifically: The energy storage power supply branch includes a charging diode, a supercapacitor, and a residual energy discharge resistor. The charging diode is connected to the input power supply and the supercapacitor. The energy storage terminal of the supercapacitor is connected to the power supply terminal of the processor module. The residual energy discharge resistor is connected between the energy storage terminal and the power supply ground. The detection and control branch includes a voltage detection chip, a first voltage divider resistor, a second voltage divider resistor, a pull-up resistor, a transistor, and a first hole-channel field-effect transistor. The first voltage divider resistor and the second voltage divider resistor are connected to the energy storage terminal to form a detection voltage. The residual pressure discharge branch includes a second hole-channel field-effect transistor, a first control resistor, and a second control resistor. The first hole-channel field-effect transistor, the first control resistor, and the second control resistor are connected between the detection and control branch and the second hole-channel field-effect transistor, and are used to control the second hole-channel field-effect transistor to discharge the residual energy of the supercapacitor.

3. The energy storage, discharging, and residual voltage rapid discharge circuit according to claim 1, characterized in that, The energy storage power supply branch also includes a power supply diode and a grounding resistor, specifically: The input terminal of the power supply diode is connected to the input power supply, and the output terminal is connected to the detection and control branch and the residual voltage discharge branch, respectively. The grounding resistor is connected between the output terminal of the power supply diode and the power ground.

4. The energy storage, discharging, and residual voltage rapid discharge circuit according to claim 1, characterized in that, The energy storage power supply branch also includes a first voltage equalizing resistor and a second voltage equalizing resistor.

5. The energy storage, discharging, and residual voltage rapid discharge circuit according to claim 4, characterized in that, Also includes: The supercapacitor includes a first supercapacitor and a second supercapacitor connected in series. The first voltage equalizing resistor is connected in parallel with the first supercapacitor, and the second voltage equalizing resistor is connected in parallel with the second supercapacitor.

6. The energy storage, discharging, and residual voltage rapid discharge circuit according to claim 4, characterized in that, The voltage detection chip has an open-drain output terminal, wherein the open-drain output terminal is connected to the base of the transistor via the pull-up resistor.

7. The energy storage, discharging, and residual voltage rapid discharge circuit according to claim 1, characterized in that, It also includes drive resistors and bias resistors, specifically: The driving resistor is connected between the gate control node of the first hole-channel field-effect transistor and the second hole-channel field-effect transistor. The bias resistor is connected between the gate and source of the first hole-channel field-effect transistor.

8. A method for storing, releasing energy, and rapidly discharging residual pressure, characterized in that, The method employs the energy storage, discharging, and residual voltage rapid discharge circuit as described in any one of claims 1-7, the method comprising: The detection threshold is determined based on the minimum operating voltage of the processor module; When the input power supply is normal, the energy storage unit is charged and the energy storage voltage of the energy storage unit is detected; When the input power supply stops, if the energy storage voltage is higher than the minimum operating voltage of the processor module, the energy storage unit is used to maintain the power-down protection operation. When the energy storage voltage drops to the minimum operating voltage of the processor module, the power-down protection operation is stopped, and the residual energy of the energy storage unit is discharged at full power. When the energy storage voltage drops to a level insufficient to maintain voltage detection and is lower than the startup voltage of the DC-DC converter chip on the carrier board, the remaining electrical energy of the energy storage unit is discharged.

9. The method for storing, releasing energy, and rapidly discharging residual pressure according to claim 8, characterized in that, The resistance ratio of the first voltage divider resistor and the second voltage divider resistor is determined based on the minimum operating voltage of the processor module and the detection threshold of the voltage detection chip, so that when the energy storage voltage of the supercapacitor reaches the minimum operating voltage of the processor module, the detection voltage reaches the detection threshold.

10. The method for storing, releasing energy, and rapidly discharging residual pressure according to claim 8, characterized in that, Also includes: When the detection voltage is higher than the detection threshold, the open-drain output terminal is cut off, and the pull-up resistor pulls the base potential of the transistor high until the transistor is turned on. When the detection voltage is lower than the detection threshold, the open-drain output terminal is turned on, and the base potential of the transistor is pulled down to the point where the transistor is cut off.

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