Transistor drive circuit and electronic device

Abstract

The application provides a transistor driving circuit and an electronic device. The transistor driving circuit comprises a direct current source, a voltage boosting module and a control output module connected in sequence. The direct current source is configured to output a first direct current voltage. The voltage boosting module comprises a first input end, a second input end, a first output end and a second output end. The first input end and the second input end are connected with the direct current source. The voltage boosting module is configured to boost and convert the first direct current voltage to obtain a second direct current voltage at the first output end and a third direct current voltage at the second output end. The second direct current voltage is greater than the third direct current voltage. The control output module is connected with the first output end and the second output end. The control output module is configured to be connected with a transistor to be driven. The control output module is configured to output the second direct current voltage or the third direct current voltage to the transistor to be driven to control the transistor to be driven to be turned on or turned off. The application can meet the different driving voltages required by the new transistor to be turned on and turned off.

Description

Technical Field

[0001] This application relates to the field of transistor driving technology, and in particular to a transistor driving circuit and an electronic device. Background Technology

[0002] Transistor driver circuits are widely used in electronic devices such as power converters, motor controllers, and communication equipment to control the switching on and off of power transistors. With the increasing prevalence of new wide-bandgap semiconductor devices such as gallium nitride (GaN) field-effect transistors in high-frequency, high-power-density applications, more stringent requirements are being placed on driver circuits. GaN devices have a narrow gate drive voltage range and typically require a negative or zero voltage to ensure reliable turn-off and prevent false turn-on due to gate voltage fluctuations.

[0003] Traditional driver circuits typically require multiple independent power supplies, such as generating positive voltages to turn on devices and negative or zero voltages to turn off devices. This results in complex circuit structures, a large number of components, and high costs. Furthermore, the coordination and control between multiple power supplies increases the design difficulty. Therefore, simplifying the topology of driver circuits while providing different drive voltages required for the turn-on and turn-off of new transistors has become a pressing technical problem. Summary of the Invention

[0004] This application provides a transistor driving circuit and an electronic device that can meet the different driving voltages required for the turn-on and turn-off of novel transistors.

[0005] In a first aspect, a transistor driving circuit is provided, comprising a DC source, a boost module, and a control output module connected in sequence. The DC source outputs a first DC voltage. The boost module includes a first input terminal, a second input terminal, a first output terminal, and a second output terminal. The first input terminal and the second input terminal are connected to the DC source. The boost module boosts the first DC voltage to obtain a second DC voltage at the first output terminal and a third DC voltage at the second output terminal, wherein the second DC voltage is greater than the third DC voltage. The control output module is connected to both the first and second output terminals. The control output module is connected to a transistor to be driven and outputs either the second DC voltage or the third DC voltage to the transistor to control the transistor to be turned on or off accordingly.

[0006] In one possible implementation, the turn-off voltage of the transistor to be driven is less than or equal to zero. The DC source includes a positive terminal and a negative terminal. The positive terminal is used to output the first DC voltage and is connected to the first input terminal. The negative terminal is connected to the second input terminal. The positive terminal is also connected to a terminal providing a reference voltage, which is less than the first DC voltage, such that the third DC voltage is less than or equal to zero. Therefore, when the control output module outputs the third DC voltage to the transistor to be driven, it controls the transistor to turn off.

[0007] In one possible implementation, the control output module includes a comparator and a controller. The controller is connected to the comparator, and the comparator module is connected to the transistor to be driven. The comparator is also connected to both the first output terminal and the second output terminal. The controller outputs a control signal to the comparator, and the comparator outputs either the second DC voltage or the third DC voltage to the transistor to be driven based on the level of the control signal, thereby controlling the transistor to be turned on or off accordingly.

[0008] In one possible implementation, the comparator includes a non-inverting input, an inverting input, a positive power supply terminal, a negative power supply terminal, and a voltage output terminal. The non-inverting input terminal is connected to the controller, the inverting input terminal is connected to ground, the positive power supply terminal is connected to the first output terminal, the negative power supply terminal is connected to the second output terminal, and the voltage output terminal is connected to the transistor to be driven. The non-inverting input terminal receives the control signal. When the control signal is high, it outputs a second DC voltage to the transistor to be driven through the voltage output terminal to turn the transistor on. When the control signal is low, the transistor outputs a third DC voltage to turn the transistor off.

[0009] In one possible implementation, the controller is also connected to the boost module, and the controller is further configured to output a boost signal to the boost module to control the boost module to perform boost conversion on the first DC voltage.

[0010] In one possible implementation, the control signal output by the controller alternates between high and low levels at a preset frequency, causing the transistor to be driven to alternately turn on and off at the preset frequency.

[0011] In one possible implementation, the boost module includes a first inductor, a first switch, a first diode, and a first capacitor. The first inductor and the first diode are sequentially connected between the first input terminal and the first output terminal. One end of the first switch is connected to the connection point between the first inductor and the first diode, and the other end of the first switch is connected to the connection point between the second input terminal and the second output terminal. The first capacitor is connected between the first output terminal and the second output terminal. The first switch is used to alternately switch between on and off states to charge the first capacitor, such that the voltage at the first output terminal is the second DC voltage, and the voltage at the second output terminal is the third DC voltage.

[0012] In one possible implementation, the reference voltage is zero voltage, and the turn-off voltage of the transistor to be driven is less than zero voltage.

[0013] In one possible implementation, the transistor to be driven is a gallium nitride field-effect transistor.

[0014] Secondly, an electronic device is also provided, comprising a transistor to be driven and a transistor driving circuit. The transistor driving circuit includes a DC source, a boost module, and a control output module connected in sequence. The DC source is used to output a first DC voltage. The boost module includes a first input terminal, a second input terminal, a first output terminal, and a second output terminal. The first input terminal and the second input terminal are connected to the DC source. The boost module is used to boost the first DC voltage to obtain a second DC voltage at the first output terminal and a third DC voltage at the second output terminal, wherein the second DC voltage is greater than the third DC voltage. The control output module is connected to both the first output terminal and the second output terminal. The control output module is used to connect to the transistor to be driven and to output either the second DC voltage or the third DC voltage to the transistor to control the transistor to be turned on or off accordingly.

[0015] The transistor driver circuit and electronic device of this application use a single boost module to boost the input DC voltage, generating two DC voltages with different values. A control output module then selects one of these voltages to output based on the control requirements of the driven transistor. This single-module dual-voltage architecture significantly simplifies the topology of the driver circuit, reduces the number of components, lowers material costs and board space compared to traditional solutions requiring multiple independent power supplies. Furthermore, since both voltages are generated by the same boost module, voltage accuracy and synchronization are more easily guaranteed. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application or the background art, the accompanying drawings used in the embodiments of this application or the background art will be described below.

[0017] Figure 1 This is a schematic diagram of a transistor driving circuit in some embodiments of this application.

[0018] Figure 2 This is another schematic diagram of a transistor driving circuit in some embodiments of this application.

[0019] Figure 3 This is a schematic diagram of an electronic device in some embodiments of this application.

[0020] Explanation of reference numerals in the attached diagram: 10, transistor drive circuit; 100, DC source; V1, first DC voltage; 110, connection terminal; 200, boost module; A, first input terminal; B, second input terminal; C, first output terminal; V2, second DC voltage; D, second output terminal; V3, third DC voltage; L1, first inductor; S1, first switch; D1, first diode; C1, first capacitor; 300, control output module; 310, comparator; R+, non-inverting resistor; R-, inverting resistor; 320, controller; GND, ground; 20, transistor to be driven; 1, electronic device. Detailed Implementation

[0021] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0022] In the description of the embodiments of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0023] In the description of the embodiments of this application, it should be noted that the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of the embodiments of this application, unless otherwise stated, "multiple" means two or more.

[0024] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion, such that a process, method, system, product, or server that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such processes, methods, products, or devices.

[0025] Please see Figure 1 , Figure 1 This is a schematic diagram of a transistor driving circuit in some embodiments of this application. For example... Figure 1 As shown, this application provides a transistor driving circuit 10, which includes a DC source 100, a boost module 200, and a control output module 300 connected in sequence. The DC source 100 outputs a first DC voltage V1. The boost module 200 includes a first input terminal A, a second input terminal B, a first output terminal C, and a second output terminal D. The first input terminal A and the second input terminal B are connected to the DC source 100. The boost module 200 boosts the first DC voltage V1 to obtain a second DC voltage V2 at the first output terminal C and a third DC voltage V3 at the second output terminal D, wherein the second DC voltage V2 is greater than the third DC voltage V3. The control output module 300 is connected to both the first output terminal C and the second output terminal D. The control output module 300 is connected to a transistor 20 to be driven and outputs either the second DC voltage V2 or the third DC voltage V3 to the transistor 20 to control the transistor 20 to be turned on or off accordingly.

[0026] Therefore, the transistor driving circuit 10 described in this application boosts the input DC voltage using a single boost module 200, simultaneously generating two DC voltages with different values. The control output module 300 then selects one of these voltages to output based on the control requirements of the transistor 20 to be driven. This single-module dual-voltage architecture significantly simplifies the topology of the driving circuit, reduces the number of components, lowers material costs and board area, compared to traditional solutions that require multiple independent power supplies. Furthermore, since both voltages are generated by the same boost module 200, voltage accuracy and synchronization are more easily guaranteed.

[0027] In this system, a voltage difference is formed between the first output terminal C and the second output terminal D of the boost module 200, with the first output terminal C having a higher potential relative to the second output terminal D. When the second output terminal D is connected to a certain reference voltage, the voltage values ​​of the first output terminal C and the second output terminal D relative to ground are respectively the second DC voltage V2 and the third DC voltage V3.

[0028] Please refer to the following: Figure 2 , Figure 2This is another schematic diagram of a transistor driving circuit in some embodiments of this application. For example... Figure 1 , Figure 2 As shown, the turn-off voltage of the transistor 20 to be driven is less than or equal to zero. The DC source 100 includes a positive terminal and a negative terminal. The positive terminal is used to output a first DC voltage V1 and is connected to the first input terminal A. The negative terminal is connected to the second input terminal B. The positive terminal is also used to connect to a connection terminal 110 that provides a reference voltage. The reference voltage is less than the first DC voltage V1, making the third DC voltage V3 less than or equal to zero. Therefore, when the control output module 300 outputs the third DC voltage V3 to the transistor 20 to be driven, the transistor 20 is controlled to turn off.

[0029] Therefore, the transistor driving circuit 10 described in this application connects the positive terminal of the power supply to the connection terminal 110 that provides the reference voltage, so that the voltage generated at the second output terminal D of the boost module 200 can be negative or zero relative to the reference terminal. For transistors that require negative or zero voltage to reliably turn off (such as GaN devices), this configuration can provide a driving voltage that meets the turn-off requirements without the need for an additional negative voltage power supply, effectively preventing the transistor from being falsely turned on in the off state and improving the compatibility of the driving circuit with new wide-bandgap devices.

[0030] like Figure 1 , Figure 2 As shown, the control output module 300 includes a comparator 310 and a controller 320. The controller 320 is connected to the comparator 310, and the comparator module is used to connect to the transistor 20 to be driven. The comparator 310 is also connected to both the first output terminal C and the second output terminal D. The controller 320 outputs a control signal to the comparator 310, and the comparator 310 outputs a second DC voltage V2 or a third DC voltage V3 to the transistor 20 to be driven, based on the level of the control signal, to control the transistor 20 to be turned on or off accordingly.

[0031] Therefore, the transistor driving circuit 10 described above in this application uses a comparator 310 as the core device of the control output module 300, which automatically selects to output a high driving voltage or a low driving voltage according to the control signal level output by the controller 320. The comparator 310 can provide a larger driving current and a faster response speed, and its positive and negative power supply terminals are connected to high and low voltages respectively, so that the output voltage can directly follow the control signal to switch between high and low levels, resulting in stronger driving capability and faster response, making it suitable for high-frequency switching drive applications.

[0032] like Figure 1 , Figure 2As shown, comparator 310 includes a non-inverting input, an inverting input, a positive power supply terminal, a negative power supply terminal, and a voltage output terminal. The non-inverting input is connected to controller 320, the inverting input is connected to ground (GND), the positive power supply terminal is connected to the first output terminal C, the negative power supply terminal is connected to the second output terminal D, and the voltage output terminal is connected to the transistor 20 to be driven. The non-inverting input receives a control signal. When the control signal is high, it outputs a second DC voltage V2 to the transistor 20 to turn it on. When the control signal is low, the transistor 20 outputs a third DC voltage V3 to turn it off.

[0033] Therefore, the transistor driving circuit 10 described in this application receives a control signal at the non-inverting input of the comparator 310, and connects the positive and negative power supply terminals to the high and low voltages generated by the boost module 200, respectively. This allows the comparator 310 to output a high voltage to turn on the transistor under a high-level control signal and a low voltage to turn off the transistor under a low-level control signal. This method requires only one control signal to achieve bidirectional switching of the transistor driving voltage, resulting in simple control logic and eliminating the need for complex level conversion or isolation circuits, thus reducing the design complexity of the control circuit.

[0034] The non-inverting input terminal and the controller 320 may also include a non-inverting resistor R+, the inverting input terminal and ground GND may also include an inverting resistor R-, and the voltage output terminal and the driven transistor 20 may also include an output resistor (not shown in the figure).

[0035] In some embodiments, the controller 320 is also connected to the boost module 200, and the controller 320 is also used to output a boost signal to the boost module 200 to control the boost module 200 to perform boost conversion on the first DC voltage V1.

[0036] Therefore, the transistor driving circuit 10 and controller 320 of this application simultaneously output boost signals to the boost module 200, so that the boost conversion and drive control in the driving circuit are coordinated and managed by the same controller 320. This integrated control method avoids communication delay and synchronization problems between multiple chips, improves the integration and response speed of the driving circuit, and reduces the number of external components.

[0037] Furthermore, the control signal output by the controller 320 alternates between high and low levels at a preset frequency, causing the transistor to be driven 20 to alternately turn on and off at a preset frequency.

[0038] Therefore, in the transistor driving circuit 10 described above in this application, the control signal output by the controller 320 alternates between high and low levels at a preset frequency, causing the transistors to be driven 20 to alternately turn on and off at the same frequency. This method directly links the switching frequency of the driving circuit with the frequency of the control signal, making it easy to flexibly adjust the switching frequency through software or hardware to adapt to the frequency requirements of different application scenarios.

[0039] In some embodiments, the controller 320 may be a general-purpose processor such as a central processing unit (CPU), or a digital signal processor (DSP), application specific integrated circuit (ASIC), field-programmable gate array (FPGA), or other programmable logic devices, discrete gate logic devices, transistor logic devices, or other logic control devices. It may also be a microprocessor such as a micro control unit (MCU).

[0040] In some embodiments, the controller 320 may first start the boost module 200 to generate a stable second DC voltage V2 and a third DC voltage V3, and then output a control signal to drive the transistor 20 to be driven, thereby ensuring the stability and reliability of the drive voltage.

[0041] like Figure 1 , Figure 2 As shown, the boost module 200 includes a first inductor L1, a first switch S1, a first diode D1, and a first capacitor C1. The first inductor L1 and the first diode D1 are sequentially connected between the first input terminal A and the first output terminal C. One end of the first switch S1 is connected to the connection point between the first inductor L1 and the first diode D1, and the other end of the first switch S1 is connected to the connection point between the second input terminal B and the second output terminal D. The first capacitor C1 is connected between the first output terminal C and the second output terminal D. The first switch S1 is used to alternately switch between on and off states to charge the first capacitor C1, making the voltage at the first output terminal C a second DC voltage V2, and the voltage at the second output terminal D a third DC voltage V3.

[0042] Therefore, the transistor driving circuit 10 and boost module 200 of this application adopt a classic boost topology composed of inductors, switching transistors, diodes, and capacitors. By charging the capacitor through the high-frequency switching of the switching transistors, the first output terminal C obtains a second DC voltage V2 that is higher than the input voltage, while the second output terminal D has a lower voltage relative to the first output terminal C. This topology is mature and reliable, has high conversion efficiency, and is convenient for component selection. Furthermore, the characteristic that the voltage through the second output terminal D is naturally lower than that through the first output terminal C naturally forms the high and low dual voltages required to drive the transistor to turn on and off.

[0043] Specifically, by connecting the positive terminal of the power supply to the reference voltage connection terminal 110, and using the high-frequency switching of the switching transistor in the boost module 200 to charge the capacitor, the voltage of the first output terminal C relative to ground is increased to the second DC voltage V2. Since there is a current path between the second output terminal D and the negative terminal of the power supply when the switching transistor is turned on, the potential of the second output terminal D relative to ground can be lower than zero, forming a negative third DC voltage V3.

[0044] Specifically, when the first switch S1 is on, the first inductor L1 stores energy from the DC source 100, the first diode D1 is reverse-biased and cut off, and the first capacitor C1 supplies power to the first output terminal C. When the first switch S1 is off, the energy in the first inductor L1 is superimposed on the input voltage and charges the first capacitor C1 through the first diode D1. The voltage across the first capacitor C1 is the difference between the second DC voltage V2 and the third DC voltage V3. The magnitude of the second DC voltage V2 can be adjusted by adjusting the duty cycle of the first switch S1.

[0045] In one possible implementation, the reference voltage is zero, and the turn-off voltage of the transistor 20 to be driven is less than zero.

[0046] Therefore, the transistor driving circuit 10 described above in this application configures the reference voltage to zero, making the turn-off voltage lower than zero, i.e., a negative voltage. For transistors such as GaN that require negative voltage turn-off, negative voltage turn-off can provide higher turn-off reliability, effectively suppress the gate voltage rise caused by dv / dt during high-speed switching, avoid transistor false turn-on, and improve the stability and safety of the circuit under high-frequency and high-voltage conditions.

[0047] The reference voltage is zero voltage, meaning that connection terminal 110 is ground.

[0048] In one possible implementation, the transistor to be driven 20 is a gallium nitride field-effect transistor.

[0049] Therefore, the transistor driving circuit 10 described above in this application is a gallium nitride field-effect transistor design, which makes full use of the advantages of GaN devices such as high frequency and low on-resistance. At the same time, by providing dual voltage outputs that meet the requirements of its gate drive voltage range and turn-off negative voltage, it ensures that the GaN device can be turned on quickly and turned off reliably during high-speed switching, thereby maximizing the performance advantages of GaN devices in high power density scenarios such as AI server power supplies and communication power supplies.

[0050] Furthermore, the first DC voltage V1 can be 4V, the second DC voltage V2 can be boosted to 12V to turn on the gallium nitride field-effect transistor, and the third DC voltage V3 is -4V because the positive terminal of the power supply is connected to a connection terminal 110 that provides a reference voltage to turn off the gallium nitride field-effect transistor.

[0051] In other embodiments, in addition to GaN transistors, this driving circuit is also applicable to other power transistors that require both positive and negative voltage driving, such as wide bandgap semiconductor devices like SiC MOSFETs, or devices like IGBTs that require negative voltage turn-off.

[0052] The transistor driver circuit 10 of this application, through the aforementioned structure, specifically generates a high turn-on voltage and a low turn-off voltage simultaneously via a single boost module 200. The comparator 310 automatically selects the output based on a control signal, achieving a dual-voltage output function for the driver circuit. This significantly simplifies the circuit topology and reduces the number of components and board area. Simultaneously, by connecting the positive power supply terminal to the reference voltage connection terminal 110, the turn-off voltage can be negative, meeting the negative voltage turn-off requirements of novel wide-bandgap transistors such as gallium nitride, effectively preventing false turn-on. This driver circuit features a compact structure, simple control logic, and strong adaptability, better meeting the high efficiency, high reliability, and high power density requirements of AI server power supplies, communication power supplies, and other applications.

[0053] Please see Figure 3 , Figure 3 This is a schematic diagram of an electronic device in some embodiments of this application. For example... Figure 3 As shown, this application also provides an electronic device 1, which includes a transistor 20 to be driven and a transistor driving circuit 10 in any of the foregoing embodiments.

[0054] Please refer to it again. Figure 1 .like Figure 1As shown, the transistor driving circuit 10 includes a DC source 100, a boost module 200, and a control output module 300 connected in sequence. The DC source 100 is used to output a first DC voltage V1. The boost module 200 includes a first input terminal A, a second input terminal B, a first output terminal C, and a second output terminal D. The first input terminal A and the second input terminal B are connected to the DC source 100. The boost module 200 is used to boost the first DC voltage V1 to obtain a second DC voltage V2 at the first output terminal C and a third DC voltage V3 at the second output terminal D, wherein the second DC voltage V2 is greater than the third DC voltage V3. The control output module 300 is connected to both the first output terminal C and the second output terminal D. The control output module 300 is used to connect to the transistor 20 to be driven and outputs either the second DC voltage V2 or the third DC voltage V3 to the transistor 20 to control the transistor 20 to be turned on or off accordingly.

[0055] For a more specific description of the transistor driving circuit 10, please refer to the relevant content of the transistor driving circuit 10 in any of the foregoing embodiments, which will not be repeated here.

[0056] The transistor driver circuit 10 and electronic device 1 of this application, through the aforementioned structure, specifically generate a high turn-on voltage and a low turn-off voltage simultaneously via a single boost module 200, and the comparator 310 automatically selects the output based on the control signal, realizing the dual-voltage output function of the driver circuit. This significantly simplifies the circuit topology and reduces the number of components and board area. Simultaneously, by connecting the positive terminal of the power supply to the reference voltage connection terminal 110, the turn-off voltage can be negative, meeting the requirements of new wide-bandgap transistors such as gallium nitride for negative voltage turn-off and effectively preventing false turn-on. This driver circuit has a compact structure, simple control logic, and strong adaptability, better meeting the requirements of AI server power supplies, communication power supplies, and other applications for high efficiency, high reliability, and high power density in driver circuits.

[0057] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Where there is no conflict, the embodiments and features in the embodiments of this application can be combined with each other. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A transistor driving circuit, characterized in that, It includes a DC power source, a boost module, and a control output module connected in sequence; The DC source is used to output a first DC voltage; The boost module includes a first input terminal, a second input terminal, a first output terminal, and a second output terminal. The first input terminal and the second input terminal are connected to the DC source. The boost module is used to boost the first DC voltage to obtain a second DC voltage at the first output terminal and a third DC voltage at the second output terminal, wherein the second DC voltage is greater than the third DC voltage. The control output module is connected to both the first output terminal and the second output terminal. The control output module is used to connect to the transistor to be driven. The control output module is used to output the second DC voltage or the third DC voltage to the transistor to be driven, so as to control the transistor to be driven to turn on or off accordingly.

2. The transistor driving circuit according to claim 1, characterized in that, The turn-off voltage of the transistor to be driven is less than or equal to zero voltage. The DC source includes a positive power supply terminal and a negative power supply terminal. The positive power supply terminal is used to output the first DC voltage. The positive power supply terminal is connected to the first input terminal, and the negative power supply terminal is connected to the second input terminal. The positive terminal of the power supply is also used to connect to a connection terminal that provides a reference voltage. The reference voltage is less than the first DC voltage, so that the third DC voltage is less than or equal to zero voltage. Then, when the control output module outputs the third DC voltage to the transistor to be driven, it controls the transistor to be driven to turn off.

3. The transistor driving circuit according to claim 1, characterized in that, The control output module includes a comparator and a controller. The controller is connected to the comparator. The comparator module is used to connect to the transistor to be driven. The comparator is also connected to both the first output terminal and the second output terminal. The controller is used to output a control signal to the comparator, and the comparator is used to output the second DC voltage or the third DC voltage to the transistor to be driven according to the level of the control signal, so as to control the transistor to be driven to turn on or off accordingly.

4. The transistor driving circuit according to claim 3, characterized in that, The comparator includes a non-inverting input terminal, an inverting input terminal, a positive power supply terminal, a negative power supply terminal, and a voltage output terminal. The non-inverting input terminal is connected to the controller, the inverting input terminal is connected to ground, the positive power supply terminal is connected to the first output terminal, the negative power supply terminal is connected to the second output terminal, and the voltage output terminal is connected to the transistor to be driven. The non-inverting input terminal is used to receive the control signal. When the control signal is high, the second DC voltage is output to the transistor to be driven through the voltage output terminal to control the transistor to be driven to turn on. When the control signal is low, the transistor to be driven outputs the third DC voltage to control the transistor to be driven to turn off.

5. The transistor driving circuit according to claim 3, characterized in that, The controller is also connected to the boost module, and the controller is also used to output a boost signal to the boost module to control the boost module to perform boost conversion on the first DC voltage.

6. The transistor driving circuit according to claim 5, characterized in that, The control signal output by the controller alternates between high and low levels at a preset frequency, causing the transistor to be driven to alternately turn on and off at the preset frequency.

7. The transistor driving circuit according to claim 1, characterized in that, The boost module includes a first inductor, a first switch, a first diode, and a first capacitor. The first inductor and the first diode are connected sequentially between the first input terminal and the first output terminal. One end of the first switch is connected to the connection point between the first inductor and the first diode, and the other end of the first switch is connected to the connection point between the second input terminal and the second output terminal. The first capacitor is connected between the first output terminal and the second output terminal. The first switch is used to alternately be in the on and off states to charge the first capacitor, so that the voltage at the first output terminal is the second DC voltage, and the voltage at the second output terminal is the third DC voltage.

8. The transistor driving circuit according to claim 2, characterized in that, The reference voltage is zero, and the turn-off voltage of the transistor to be driven is less than zero.

9. The transistor driving circuit according to claim 2, characterized in that, The transistor to be driven is a gallium nitride field-effect transistor.

10. An electronic device, characterized in that, It includes the transistor to be driven and the transistor driving circuit as described in any one of claims 1-9.

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