All-crystal resonator and method for manufacturing the same

Abstract

The application discloses a full crystal resonator and a manufacturing method thereof. The full crystal resonator comprises a crystal base, a resonant main body and a crystal packaging cover. The resonant main body comprises a frame and a crystal support part connected with the frame. The crystal packaging cover and the crystal base are respectively and sealingly connected with the frame to form a sealed cavity together with the crystal base. At least one of the crystal packaging cover and the crystal base is provided with a barrier, which is located in the sealed cavity to divide the sealed cavity into a to-be-processed area and a main area. The barrier is spaced apart from the crystal support part to form an oscillation gap. The barrier is used for blocking the waste generated by the part of the crystal support part in the to-be-processed area during the thinning process. The barrier is used for blocking the waste generated by the part of the crystal support part in the to-be-processed area during the thinning process, which can effectively reduce or even avoid the accumulation of the splashed waste on the part of the crystal support part in the main area, thereby reducing or even avoiding the influence on the performance of the resonant main body.

Description

Technical Field

[0001] This application relates to the field of resonator technology, and in particular to an all-crystal resonator and its manufacturing method. Background Technology

[0002] During the manufacturing process of crystal resonators, factors such as stress and temperature can cause some crystal resonators produced in the same batch to have higher oscillation frequencies that meet the standards, while the remaining crystal resonators have lower oscillation frequencies that do not meet the standards, resulting in a low production yield of crystal resonators.

[0003] To improve the production yield of crystal resonators, it is usually necessary to test the oscillation frequency of multiple crystal resonators produced in the same batch. When the oscillation frequency of a crystal resonator is lower than a preset oscillation frequency threshold (i.e., it does not meet the standard), the resonator body needs to be thinned to increase the oscillation frequency. However, considering that the thinning process of the resonator body generates splashed waste material (such as molten droplets), this splashed waste material, due to its uncertain movement direction, accumulates in the unthinned part of the resonator body, thus affecting the performance of the resonator body. Summary of the Invention

[0004] This application provides an all-crystal resonator and its manufacturing method, which can solve the problem in related technologies where splashed waste accumulates in the unthinned portion of the resonant body of the crystal resonator, thus affecting the performance of the resonant body.

[0005] In a first aspect, embodiments of this application provide an all-crystal resonator; the all-crystal resonator includes a crystal base, a resonant body, and a crystal encapsulation cover. The resonant body includes a frame with an accommodating space and a crystal support portion located in the accommodating space and connected to the frame. The crystal encapsulation cover and the crystal base are respectively sealed and connected to opposite sides of the frame to form a sealed cavity with the crystal base. At least one of the crystal encapsulation cover and the crystal base is provided with a partition member. The partition member is located in the sealed cavity to divide the sealed cavity into a processing area and a main area. The partition member is spaced apart from the crystal support portion to form an oscillation gap, and the partition member is used to block waste material generated by the portion of the crystal support portion in the processing area during the thinning process.

[0006] Secondly, embodiments of this application provide a method for manufacturing an all-crystal resonator; the manufacturing method includes the following steps: fabricating a crystal substrate mother film, the crystal substrate mother film having a plurality of first regions, each first region having a crystal substrate, and the crystal substrates of the plurality of first regions being connected together; fabricating a resonator body mother film, the resonator body mother film having a plurality of second regions, each second region having a resonator body, the resonator bodies of the plurality of second regions being connected together, each resonator body including a frame having an accommodating space and a crystal support portion located in the accommodating space and connected to the frame; fabricating a crystal encapsulation cover mother film, the crystal encapsulation cover mother film having a plurality of third regions, each third region having a crystal encapsulation cover, the crystal encapsulation covers of the plurality of third regions being connected together, and at least one of each crystal encapsulation cover and each crystal substrate being provided with a spacer; and then fabricating the crystal... The base mother plate, the resonant body mother plate, and the crystal encapsulation cover mother plate are sequentially and sealed together to form an encapsulation mother plate with multiple sealed cavities. The first region, the second region, the third region, and the sealed cavities correspond one-to-one. Each spacer is located in a sealed cavity to divide the corresponding sealed cavity into a processing area and a main region. Each spacer is spaced apart from the corresponding crystal support to form an oscillation gap. The oscillation frequency of the resonant bodies in all second regions is detected. When the oscillation frequency of the resonant bodies in at least some second regions is lower than a preset oscillation frequency threshold, the portion of the crystal support of the resonant body with the oscillation frequency lower than the preset oscillation frequency threshold in the processing area is thinned. The encapsulation mother plate is cut to obtain multiple all-crystal resonators, wherein each all-crystal resonator includes a crystal base, a resonant body, and a crystal encapsulation cover.

[0007] Based on the all-crystal resonator and its manufacturing method according to the embodiments of this application, by designing a partition, the partition divides the sealed cavity into a processing area and a main area. When the oscillation frequency of the all-crystal resonator is detected to be lower than the preset oscillation frequency threshold and does not meet the standard, it is only necessary to thin the part of the crystal support in the processing area. By reducing the thickness of the part of the crystal support in the processing area, the oscillation frequency of the all-crystal resonator is increased. The partition is used to block the waste generated during the thinning process of the part of the crystal support in the processing area, which can effectively reduce or even avoid the accumulation of splashed waste in the part of the crystal support in the main area, thereby reducing or even avoiding the impact on the performance of the resonator body. Attached Figure Description

[0008] Figure 1 This is a partial perspective view of an all-crystal resonator in one embodiment of this application; Figure 2 for Figure 1 Exploded view of an all-crystal resonator in a diagram; Figure 3 for Figure 1An exploded view of the all-crystal resonator from another perspective; Figure 4 for Figure 1 A cross-sectional view of an all-crystal resonator in a crystal. Figure 5 This is a cross-sectional view of a partition member disposed on a crystal package cover in one embodiment of this application; Figure 6 This is a cross-sectional view of a partition member disposed on a crystal substrate in one embodiment of this application; Figure 7 This is a cross-sectional view of a partition member disposed on a crystal packaging cover and a crystal base in one embodiment of this application; Figure 8 This is a perspective view of an all-crystal resonator in one embodiment of this application; Figure 9 for Figure 8 Exploded view of an all-crystal resonator in a diagram; Figure 10 for Figure 8 An exploded view of the all-crystal resonator from another perspective; Figure 11 This is a perspective view of an all-crystal resonator in another embodiment of this application; Figure 12 for Figure 11 Exploded view of an all-crystal resonator in a diagram; Figure 13 for Figure 11 An exploded view of the all-crystal resonator from another perspective; Figure 14 This is a perspective view of an all-crystal resonator in another embodiment of this application; Figure 15 for Figure 14 Exploded view of an all-crystal resonator in a diagram; Figure 16 for Figure 14 An exploded view of the all-crystal resonator from another perspective; Figure 17 This is a schematic flowchart of a method for manufacturing an all-crystal resonator according to one embodiment of this application; Figure 18 This is a perspective view of the packaging master film in one embodiment of this application; Figure 19 This is a plan view of the crystal base mother sheet in one embodiment of this application; Figure 20 This is a plan view of the resonant main body mother plate in one embodiment of this application; Figure 21 This is a plan view of the crystal packaging cover mother sheet in one embodiment of this application; Figure 22This is a flowchart illustrating a method for manufacturing an all-crystal resonator according to another embodiment of this application. Detailed Implementation

[0009] Please refer to Figures 1-4 As shown, this application proposes an all-crystal resonator 100, which includes a crystal base 10, a resonant body 20, and a crystal encapsulation cover 30. The resonant body 20 includes a frame 21 having an accommodating space 21a, and a crystal support portion 22 located in the accommodating space 21a and connected to the frame 21. The crystal encapsulation cover 30 and the crystal base 10 are respectively sealed and connected to opposite sides of the frame 21 to form a sealed cavity 50a. At least one of the crystal sealing cover and the crystal base 10 is provided with a partition 40, which is located within the sealed cavity 50a to divide the sealed cavity 50a into a processing area 50b and a main area 50c. The partition 40 is spaced apart from the crystal support portion 22 to form an oscillation gap 60a, and the partition 40 is used to block waste generated during the thinning process of the portion of the crystal support portion 22 within the processing area 50b.

[0010] The following combination Figures 1-16 The specific structure of the all-crystal resonator 100 will be described in detail.

[0011] like Figures 1-4 As shown, the all-crystal resonator 100 includes a crystal base 10, a resonant body 20, and a crystal package cover 30.

[0012] The crystal base 10 serves as the base of the all-crystal resonator 100. The crystal base 10 is used to support components such as the resonator body 20 and the crystal package cover 30. The specific structure of the crystal base 10 will be described in detail below.

[0013] The resonant body 20 serves as the oscillation structure of the all-crystal resonator 100. The resonant body 20 includes a frame 21 and a crystal support 22.

[0014] The frame 21 serves as the outer frame connecting the resonant body 20, connecting to the crystal support 22 and the crystal base 10 and crystal encapsulation cover 30. The specific shape of the frame 21 is not limited; designers can design it according to actual needs. For example, the frame 21 may be square, rectangular, or circular, but is not limited to this shape. The frame 21 has an accommodating space 21a, which is the area enclosed by the inner annular surface of the frame 21.

[0015] The crystal support 22 serves as the oscillation unit of the resonant body 20. The crystal support 22 is located within the accommodating space 21a of the frame 21 and is connected to the frame 21. This not only allows the characteristics of the resonant body 20 to be better displayed, but also reduces the effect of external stress on the resonant body 20, thereby enhancing the stress resistance of the all-crystal resonator 100.

[0016] The crystal package cover 30 serves as the cover for the all-crystal resonator 100. The specific structure of the crystal package cover 30 will be described in detail below.

[0017] The crystal package cover 30 and the crystal base 10 are respectively sealed and connected to the opposite sides of the frame 21 to form a sealed cavity 50a. In other words, the crystal package cover 30 is sealed and connected to one side of the frame 21, and the crystal base 10 is sealed and connected to the other side of the frame 21 away from the crystal package cover 30, forming a sealed cavity 50a between the crystal package cover 30 and the crystal base 10. Using a fully crystal package cover and a fully crystal base allows for better integration during sealing, resulting in a better sealing effect and superior resonance performance. The crystal package cover 30, frame 21, crystal support 22, and crystal base 10 all use quartz crystals.

[0018] During the manufacturing process of the all-crystal resonator 100, factors such as stress and temperature can cause some all-crystal resonators 100 produced in the same batch to have higher oscillation frequencies that meet the standards, while the remaining all-crystal resonators 100 have lower oscillation frequencies that do not meet the standards, resulting in a low production yield of the all-crystal resonator 100. It is understandable that the oscillation frequency of the all-crystal resonator 100 is closely related to the thickness of the crystal support portion 22 of the resonant body 20; the greater the thickness of the crystal support portion 22 of the resonant body 20, the lower the oscillation frequency of the all-crystal resonator 100, and vice versa. To improve the production yield of the all-crystal resonator 100, it is usually necessary to test the oscillation frequency of multiple all-crystal resonators 100 produced in the same batch. When the oscillation frequency of the all-crystal resonator 100 is lower than a preset oscillation frequency threshold (i.e., it does not meet the standard), the crystal support portion 22 of the resonant body 20 is thinned to increase the oscillation frequency of the all-crystal resonator 100. Considering that the thinning process of the crystal support portion 22 of the resonant body 20 will generate splashed waste (such as molten droplets), and that the splashed waste, due to its uncertain movement direction, may accumulate in the unthinned portion of the crystal support portion 22 of the resonant body 20, thus affecting the performance of the resonant body 20, the following measures are taken to reduce or even avoid the impact of splashed waste on the resonant body 20: Figures 3-7As shown, a baffle 40 is designed to effectively block the splashed waste, which can reduce or even prevent the accumulation of splashed waste in the unthinned part of the crystal support 22 of the resonant body 20 (that is, the part of the crystal support 22 located in the main region 50c as described below).

[0019] The partition 40 is disposed on at least one of the crystal package cover 30 and the crystal base 10. For example, the partition 40 may be disposed on the crystal package cover 30, the partition 40 may be disposed on the crystal base 10, or the partition 40 may be disposed on both the crystal package cover 30 and the crystal base 10.

[0020] The partition 40 is located within the sealed cavity 50a to divide the sealed cavity 50a into a processing area 50b and a main area 50c. The processing area 50b is the area within the sealed cavity 50a used for thinning processing, and the main area 50c is the area within the sealed cavity 50a not used for thinning processing. A portion of the crystal support portion 22 of the resonant body 20 is located within the processing area 50b, and the remaining portion of the crystal support portion 22 of the resonant body 20 is located within the main area 50c.

[0021] The spacer 40 is spaced apart from the crystal support portion 22 to form an oscillation gap 60a. The spacer 40 does not contact the crystal support portion 22, thus forming an oscillation gap 60a between them. This oscillation gap 60a is designed to reserve oscillation space for the crystal support portion 22 to ensure effective oscillation of the crystal support portion 22. It should be noted that the size of the oscillation gap 60a between the spacer 40 and the crystal support portion 22 should be designed to be as small as possible without affecting the effective oscillation of the crystal support portion 22.

[0022] By designing the baffle 40, the sealed cavity 50a is divided into a processing area 50b and a main area 50c. When the oscillation frequency of the all-crystal resonator 100 is detected to be lower than the preset oscillation frequency threshold and does not meet the standard, it is only necessary to thin the part of the crystal support 22 in the processing area 50b. By reducing the thickness of the part of the crystal support 22 in the processing area 50b, the oscillation frequency of the all-crystal resonator 100 can be increased. The baffle 40 is used to block the waste generated during the thinning process of the part of the crystal support 22 in the processing area 50b, which can effectively reduce or even avoid the accumulation of splashed waste in the part of the crystal support 22 in the main area 50c, thereby reducing or even avoiding the impact on the performance of the resonator body 20.

[0023] It should be noted that the thinning process is not limited to laser processing, focused ion beam processing, and electron beam processing. Taking the crystal package cover 30 with the aforementioned partition 40 as an example, when the thinning process is laser processing, the high-energy laser beam penetrates the crystal package cover 30 and focuses on the portion of the crystal support 22 within the processing area 50b. The portion of the crystal support 22 within the processing area 50b is thinned by high-temperature melting, forming splashed waste. At this time, the partition 40 effectively blocks the splashed waste, which can effectively reduce or even avoid the accumulation of splashed waste in the portion of the crystal support 22 within the main area 50c, thereby reducing or even avoiding the impact on the performance of the resonant body 20. Taking the crystal package cover 30 with the aforementioned partition 40 as an example, when the thinning process is a focused ion beam process, the ion beam bombards the portion of the crystal support 22 within the processing area 50b, and the portion of the crystal support 22 within the processing area 50b is thinned by physical sputtering, forming splashed waste. At this time, the partition 40 effectively blocks the splashed waste, which can effectively reduce or even avoid the accumulation of splashed waste in the portion of the crystal support 22 within the main area 50c, thereby reducing or even avoiding the impact on the performance of the resonant body 20. Taking the crystal package cover 30 with the aforementioned partition 40 as an example, when the thinning process is electron beam processing, a focused electron beam bombards the portion of the crystal support 22 within the processing area 50b. Local high-temperature melting reduces the thickness of this portion, creating splashed waste. The partition 40 effectively blocks this splashed waste, effectively reducing or even preventing its accumulation in the main region 50c of the crystal support 22, thereby reducing or even preventing its impact on the performance of the resonant body 20. In this embodiment, laser processing is used to reduce the thickness of the portion of the crystal support 22 within the processing area 50b, thereby increasing the oscillation frequency of the all-crystal resonator 100.

[0024] like Figures 2-4As shown, the partition 40 includes an elongated partition 41. At least one of the crystal package cover 30 and the crystal base 10 is connected to the elongated partition 41. The elongated partition 41 is spaced apart from the crystal support portion 22 to form the aforementioned oscillation gap 60a. The elongated partition 41 divides the sealed cavity 50a into the aforementioned processing area 50b and the aforementioned main area 50c, and the width of the processing area 50b is smaller than the width of the main area 50c. By designing the partition 40 as an elongated partition 41, the elongated partition 41 can effectively block splashed waste in its own extending direction, which can effectively reduce or even avoid the accumulation of splashed waste in the portion of the crystal support portion 22 within the main area 50c, thereby reducing or even avoiding the impact on the performance of the resonant body 20. By designing a long strip baffle 41 to divide the sealing cavity 50a into a smaller processing area 50b and a larger main area 50c, the crystal support 22 within the processing area 50b can be effectively thinned, while most of the crystal support 22 is located within the larger main area 50c, which can further reduce or even avoid the impact on the performance of the resonant body 20.

[0025] The crystal support 22 includes a connecting portion 221 and a main body portion 222 arranged along a first direction XX'. The connecting portion 221 serves as the connecting end of the crystal support 22 and is connected to the frame 21. The main body portion 222 serves as the oscillation end of the crystal support 22 and is cantilevered and connected to the connecting portion 221. The main body portion 222 has a first end side 222a connected to the connecting portion 221 and a second end side 222b away from the first end side 222a. A long strip-shaped baffle 41 is disposed adjacent to the second end side 222b and extends along a second direction YY' perpendicular to the first direction XX'. This design places the free end of the crystal support 22 (i.e., the second end 222b of the main body 222) within the processing area 50b. When the oscillation frequency of the all-crystal resonator 100 is detected to be lower than the preset oscillation frequency threshold and does not meet the standard, it is only necessary to thin the free end of the crystal support 22. By reducing the thickness of the free end of the crystal support 22, the oscillation frequency of the all-crystal resonator 100 can be increased, thereby improving the production yield of the all-crystal resonator 100.

[0026] Along the first direction XX', the width of the processing area 50b is D1, and the width of the main area 50c is D2. D1 and D2 satisfy the condition: X1≤D1 / D2≤X2, where X1 can be 1 / 20 and X2 is less than or equal to 1. In one embodiment, D1 / D2 can be in the range of 0.1 to 0.5, such as 0.2.

[0027] like Figure 5As shown, when the crystal package cover 30 is connected to the aforementioned elongated partition 41, the elongated partition 41 and the crystal package cover 30 are integrally formed. For example, but not limited to, the elongated partition 41 and the crystal package cover 30 can be formed into an integral structure through an etching process. This helps to reduce the processing difficulty of the elongated partition 41 and the assembly difficulty between the elongated partition 41 and the crystal package cover 30.

[0028] like Figure 6 As shown, when the crystal substrate 10 is connected to the aforementioned elongated baffle 41, the elongated baffle 41 and the crystal substrate 10 are integrally formed. For example, but not limited to, the elongated baffle 41 and the crystal substrate 10 can be formed into an integral structure through an etching process. This helps to reduce the processing difficulty of the elongated baffle 41 and the assembly difficulty between the elongated baffle 41 and the crystal substrate 10.

[0029] Of course, in other embodiments, the partition 40 may also include a plurality of partition flanges (not shown in the figure), the plurality of partition flanges being arranged in a row along the second direction YY', and the gap between two adjacent partition flanges being designed to be as small as possible, so as to effectively reduce or even prevent splashed waste from entering the main region 50c from the gap between two adjacent partition flanges.

[0030] like Figures 2-3 As shown, the resonant body 20 also includes a conductive layer 23 disposed on the crystal support portion 22, which serves as a conductive electrode of the resonant body 20. Specifically, the conductive layer 23 includes a first conductive portion 231 and a second conductive portion 232. The first conductive portion 231 is disposed on the surface of the crystal support portion 22 and the frame 21 facing the crystal encapsulation cover 30, and the second conductive portion 232 is disposed on the surface of the crystal support portion 22 and the frame 21 facing the crystal base 10. The first conductive portion 231 serves as one of the positive and negative conductive electrodes of the resonant body 20, and the second conductive portion 232 serves as the other of the positive and negative conductive electrodes of the resonant body 20.

[0031] like Figures 8-10As shown, in one embodiment, the crystal package cover 30 is provided with the aforementioned partition 40. The crystal base 10 includes a crystal substrate 11, an insulating layer 12, and a conductive structure 13. The crystal substrate 11 is sealed to the side of the frame 21 opposite to the crystal package cover 30. The insulating layer 12 is disposed on the side of the crystal substrate 11 opposite to the frame 21. The conductive structure 13 is disposed on the side of the insulating layer 12 opposite to the crystal substrate 11. The insulating layer 12 has a through-hole 12a, in which a conductive material 70 is disposed. The crystal substrate 11 has a through-hole 12a, and a second through-hole 11a contains a conductive material 70. The frame 21 has a through-hole 21b, in which a conductive material 70 is disposed. The conductive structure 13 is electrically connected to the conductive layer 23 via the conductive material 70 disposed in the first through-hole 12a, the second through-hole 11a, and the third through-hole 21b.

[0032] The insulating layer 12 is formed on the crystal substrate 11 by semiconductor deposition. The first via 12a is formed on the insulating layer 12 by etching. The conductive material 70 in the first via 12a is formed by semiconductor deposition and etching. The conductive structure 13 is formed on the insulating layer 12 by semiconductor deposition and etching. The insulating layer 12 is disposed between the crystal substrate 11 and the conductive structure 13 in the crystal base 10. This allows the stress to be weakened by the insulating layer 12 before being transmitted to the crystal substrate 11. The weakened stress is further reduced when it is transmitted to the resonant body 20 after passing through the crystal substrate 11, thus protecting the resonant body 20 and enhancing the stress resistance of the all-crystal resonator 100. This better protects the characteristics of the all-crystal resonator 100 and prevents changes in device characteristics.

[0033] Specifically, there are two of each of the first through hole 12a, the second through hole 11a, and the third through hole 21b. The conductive structure 13 includes a first conductive end 131 and a second conductive end 132. The first conductive end 131 is electrically connected to the first conductive portion 231 via conductive material 70 disposed in one of its first through holes 12a, conductive material 70 disposed in one of its second through holes 11a (corresponding to one of its first through holes 12a), and conductive material 70 disposed in one of its third through holes 21b (corresponding to one of its second through holes 11a). The second conductive end 132 is electrically connected to the second conductive portion 232 via conductive material 70 disposed in another first through hole 12a, conductive material 70 disposed in another second through hole 11a (corresponding to another first through hole 12a), and conductive material 70 disposed in another third through hole 21b (corresponding to another second through hole 11a). The conductive material 70 is filled into the first through hole 12a, the second through hole 11a and the third through hole 21b. While achieving electrical conduction, it can also enhance the sealing performance of the all-crystal resonator 100, ensuring the tight internal packaging of the all-crystal resonator 100 and better gas sealing.

[0034] like Figures 11-13 As shown, in another embodiment, the crystal package cover 30 includes a cover body 31 and a first metal line 32. The cover body 31 is provided with the aforementioned partition 40. The first metal line 32 is embedded in the cover body 31, and one end of the first metal line 32 is electrically connected to the first conductive portion 231, while the other end of the first metal line 32 is exposed outside the cover body 31. The crystal base 10 includes a base body 14 and a second metal line 15. The second metal line 15 is embedded in the base body 14, and one end of the second metal line 15 is electrically connected to the second conductive portion 232, while the other end of the second metal line 15 is exposed outside the base body 14.

[0035] like Figures 14-16As shown, in another embodiment, the length of the frame 21 along the first direction XX' is greater than the length of the crystal encapsulation cover 30 along the first direction XX', so that the two ends of the frame 21 arranged opposite to each other along the first direction XX' form two opposing first step structures 21c with the crystal encapsulation cover 30. The length of the frame 21 along the first direction XX' is greater than the length of the crystal base 10 along the first direction XX', so that the two ends of the frame 21 arranged opposite to each other along the first direction XX' form two opposing second step structures 21d with the crystal base 10. The crystal encapsulation cover 30 is provided with the aforementioned partition 40, one of its first step structures 21c and one of its second step structures 21d located on the same side are provided with a first conductive layer 80, and the other first step structure 21c and the other second step structure 21d located on the same side are provided with a second conductive layer 90. The first conductive layer 80 is electrically connected to the first conductive portion 231, and the second conductive layer 90 is electrically connected to the second conductive portion 232.

[0036] Please see Figure 17 , Figure 17 This is a schematic flowchart illustrating a method for manufacturing an all-crystal resonator according to one embodiment of this application. The three components of the all-crystal resonator 100 provided in this application can all be manufactured separately, such as... Figures 18-21 As shown, Figures 18-21 A schematic diagram of the crystal base mother plate 1, the resonant body mother plate 2a and the crystal encapsulation cover mother plate 3a used in the manufacturing method of the all-crystal resonator 100 is shown, and the three mother plates have the same size.

[0037] like Figure 17 As shown, the manufacturing method of the all-crystal resonator 100 provided in this application includes steps S201-S207: Step S201: Fabricate a crystal base mother film 1. The crystal base mother film 1 has multiple first regions 1a, each first region 1a has a crystal base 10, and the crystal bases 10 of multiple first regions 1a are connected together.

[0038] Among them, crystal base mother plate 1 is as follows Figure 19 As shown, Figure 19 The diagram illustrates the design of multiple crystal bases 10 in a crystal base motherboard 1, enabling mass production of the crystal bases 10 during manufacturing.

[0039] Step S202: Fabricate a resonant main body mother plate 2a. The resonant main body mother plate 2a has multiple second regions 2a. Each second region 2a has a resonant main body 20. The resonant main bodies 20 of multiple second regions 2a are connected together. Each resonant main body 20 includes a frame 21 with an accommodating space 21a and a crystal support portion 22 located in the accommodating space 21a and connected to the frame 21.

[0040] Among them, the resonant main body mother plate 2a is as follows Figure 20 As shown, Figure 20 This illustrates the design of multiple resonant bodies 20 on the resonant body mother film 2a to achieve large-scale production. Each resonant body 20 on the resonant body mother film 2a corresponds one-to-one with each crystal base 10 on the crystal base mother film 1, that is, each second region 2a corresponds to each first region 1a.

[0041] Specifically, step S202 includes: providing a wafer, processing the wafer such that each resonant body 20 forms a frame 21 and a crystal support portion 22, the frame 21 having an accommodating space 21a, the crystal support portion 22 being located in the accommodating space 21a and connected to the frame 21, and forming a conductive layer 23 on the frame 21 and the support portion.

[0042] Step S203: Fabricate a crystal encapsulation cover mother film 3a. The crystal encapsulation cover mother film 3a has a plurality of third regions 3a, each third region 3a has a crystal encapsulation cover 30, and the crystal encapsulation covers 30 of the plurality of third regions 3a are connected together. At least one of each crystal encapsulation cover 30 and each crystal base 10 is provided with a spacer 40.

[0043] Among them, the crystal packaging cover mother chip 3a is as follows Figure 21 As shown, Figure 21 This illustrates the design of multiple crystal package covers 30 within a crystal package cover motherboard 3a, enabling mass production of the crystal package covers 30 during manufacturing. Each crystal package cover 30 on the crystal package cover motherboard 3a corresponds one-to-one with each resonant body 20 on the resonant body motherboard 2a; that is, each third region 3a corresponds to each second region 2a.

[0044] The baffle 40 effectively blocks splashed waste, reducing or even preventing its accumulation in the unthinned portion of the crystal support 22 of the resonant body 20. Detailed design of the baffle 40 can be found in the above description. The baffle 40 can be located on the crystal package cover 30, on the crystal base 10, or both.

[0045] Step S204: Sequentially seal and connect the crystal base mother plate 1, the resonant main body mother plate 2a and the crystal encapsulation cover mother plate 3a together to form an encapsulation mother plate 4 with multiple sealing cavities 50a. The first region 1a, the second region 2a, the third region 3a and the sealing cavity 50a correspond one-to-one. Each partition 40 is located in a sealing cavity 50a to divide the corresponding sealing cavity 50a into a processing area 50b and a main area 50c. Each partition 40 is spaced apart from the corresponding crystal support part 22 to form an oscillation gap 60a.

[0046] Understandably, the first region 1a, the second region 2a, the third region 3a and the sealing cavity 50a are arranged in a one-to-one correspondence. The crystal base 10 of each first region 1a, the resonant body 20 of the corresponding second region 2a, and the crystal encapsulation cover 30 of the corresponding third region 3a are sealed and connected to form a full crystal resonator 100 with a sealing cavity 50a. Before the cutting process, all full crystal resonators 100 are connected together and exist in the form of a package mother 4.

[0047] For each all-crystal resonator 100: the partition 40 divides the sealed cavity 50a into a processing area 50b and a main area 50c. The processing area 50b is the area within the sealed cavity 50a used for thinning processing, and the main area 50c is the area within the sealed cavity 50a not used for thinning processing. A portion of the crystal support portion 22 of the resonant body 20 is located within the processing area 50b, and the remaining portion of the crystal support portion 22 is located within the main area 50c. The partition 40 does not contact the crystal support portion 22 to form an oscillation gap 60a. This oscillation gap 60a is designed to reserve oscillation space for the crystal support portion 22 to ensure effective oscillation of the crystal support portion 22. It should be noted that the size of the oscillation gap 60a between the partition 40 and the crystal support portion 22 should be designed to be as small as possible without affecting the effective oscillation of the crystal support portion 22.

[0048] Step S205: Detect the oscillation frequency of the resonant body 20 in all second regions 2a.

[0049] The oscillation frequency of the resonant body 20 in all second regions 2a can be detected using a network analyzer with a precision microprobe or a dedicated impedance analyzer. The detection is usually carried out in a constant temperature environment, or the test head is temperature controlled to eliminate the influence of temperature on the frequency.

[0050] Step S206: When the oscillation frequency of at least a portion of the resonant body 20 in the second region 2a is lower than a preset oscillation frequency threshold, the portion of the crystal support portion 22 of the resonant body 20 with the oscillation frequency lower than the preset oscillation frequency threshold within the processing region 50b is thinned.

[0051] Understandably, during the manufacturing process of the all-crystal resonator 100, factors such as stress and temperature can cause some all-crystal resonators 100 produced in the same batch to have higher oscillation frequencies that meet the standard, while the remaining all-crystal resonators 100 have lower oscillation frequencies that do not meet the standard, resulting in a low production yield of the all-crystal resonator 100. The oscillation frequency of the all-crystal resonator 100 is closely related to the thickness of the crystal support portion 22 of the resonant body 20. The greater the thickness of the crystal support portion 22 of the resonant body 20, the lower the oscillation frequency of the all-crystal resonator 100; conversely, the smaller the thickness of the crystal support portion 22 of the resonant body 20, the higher the oscillation frequency of the all-crystal resonator 100. To improve the production yield of the all-crystal resonator 100, it is usually necessary to test the oscillation frequency of multiple all-crystal resonators 100 produced in the same batch, and when the oscillation frequency of the all-crystal resonator 100 is lower than a preset oscillation frequency threshold (i.e., does not meet the standard), the crystal support portion 22 of the resonant body 20 is thinned.

[0052] Thinning processes are not limited to laser processing, focused ion beam processing, and electron beam processing. Taking the crystal package cover 30 with the aforementioned partition 40 as an example, when the thinning process is laser processing, the high-energy laser beam penetrates the crystal package cover 30 and focuses on the portion of the crystal support 22 within the processing area 50b. The portion of the crystal support 22 within the processing area 50b is thinned by high-temperature melting, forming splashed waste. At this time, the partition 40 effectively blocks the splashed waste, effectively reducing or even preventing the accumulation of splashed waste in the portion of the crystal support 22 within the main area 50c, thereby reducing or even preventing the impact on the performance of the resonant body 20. Taking the crystal package cover 30 with the aforementioned partition 40 as an example, when the thinning process is a focused ion beam process, the ion beam bombards the portion of the crystal support 22 within the processing area 50b, and the portion of the crystal support 22 within the processing area 50b is thinned by physical sputtering, forming splashed waste. At this time, the partition 40 effectively blocks the splashed waste, which can effectively reduce or even avoid the accumulation of splashed waste in the portion of the crystal support 22 within the main area 50c, thereby reducing or even avoiding the impact on the performance of the resonant body 20. Taking the crystal package cover 30 with the aforementioned partition 40 as an example, when the thinning process is electron beam processing, a focused electron beam bombards the portion of the crystal support 22 within the processing area 50b. Local high-temperature melting reduces the thickness of this portion, creating splashed waste. The partition 40 effectively blocks this splashed waste, effectively reducing or even preventing its accumulation in the main region 50c of the crystal support 22, thereby reducing or even preventing its impact on the performance of the resonant body 20. In this embodiment, laser processing is used to reduce the thickness of the portion of the crystal support 22 within the processing area 50b, thereby increasing the oscillation frequency of the all-crystal resonator 100.

[0053] Step S207: Cut the packaging mother chip 4 to obtain multiple all-crystal resonators 100, wherein each all-crystal resonator 100 includes a crystal base 10, a resonant body 20 and a crystal packaging cover 30.

[0054] Based on the manufacturing method of the all-crystal resonator 100 in the embodiments of this application, by designing a partition 40 on at least one of the crystal base 10 and the crystal package cover 30, the partition 40 divides the sealed cavity 50a into a processing area 50b and a main area 50c. When it is detected that the oscillation frequency of the all-crystal resonator 100 is lower than the preset oscillation frequency threshold and does not meet the standard, it is only necessary to thin the part of the crystal support 22 in the processing area 50b. By reducing the thickness of the part of the crystal support 22 in the processing area 50b, the oscillation frequency of the all-crystal resonator 100 is increased. The partition 40 is used to block the waste generated during the thinning process of the part of the crystal support 22 in the processing area 50b, which can effectively reduce or even avoid the accumulation of splashed waste in the part of the crystal support 22 in the main area 50c, thereby reducing or even avoiding the impact on the performance of the resonant body 20. By using a crystal base 10 and a crystal package cover 30, the all-crystal resonator 100 can be better integrated during packaging and sealing, resulting in a better sealing effect and superior performance.

[0055] Please see Figure 22 Before step S207, step S301 is included: performing a secondary detection on the oscillation frequency of the resonant body 20 in all second regions 2a. A network analyzer with a precision microprobe or a dedicated impedance analyzer is used to perform a secondary detection on the oscillation frequency of the resonant body 20 in all second regions 2a. The secondary detection is usually performed under constant temperature conditions or the test head is temperature-controlled to eliminate the influence of temperature on the frequency.

Claims

1. An all-crystal resonator, characterized in that, include: Crystal base; The resonant body includes a frame with an accommodating space and a crystal support located in the accommodating space and connected to the frame; A crystal encapsulation cover is sealed to the crystal base on two opposite sides of the frame to form a sealed cavity. At least one of the crystal encapsulation cover and the crystal base is provided with a partition. The partition is located in the sealed cavity to divide the sealed cavity into a processing area and a main area. The partition is spaced apart from the crystal support to form an oscillation gap. The partition is used to block the waste material generated by the portion of the crystal support in the processing area during the thinning process.

2. The all-crystal resonator as described in claim 1, characterized in that, The partition includes an elongated partition plate, and at least one of the crystal encapsulation cover and the crystal base is connected to the elongated partition plate. The elongated partition plate is spaced apart from the crystal support to form the oscillation gap. The elongated partition plate divides the sealed cavity into the processing area and the main area, and the width of the processing area is smaller than the width of the main area.

3. The all-crystal resonator as described in claim 2, characterized in that, The crystal support includes a connecting portion and a main body portion arranged along a first direction. The connecting portion serves as the connecting end of the crystal support and is connected to the frame. The main body portion serves as the oscillation end of the crystal support and is cantilevered and connected to the connecting portion. The main body portion has a first end side connected to the connecting portion and a second end side away from the first end side. The elongated baffle is disposed adjacent to the second end side, and the elongated baffle extends along a second direction perpendicular to the first direction.

4. The all-crystal resonator as described in claim 3, characterized in that, Along the first direction, the width of the area to be processed is D1, the width of the main area is D2, and D1 and D2 satisfy the condition: 1 / 20≤D1 / D2≤1.

5. The all-crystal resonator as described in claim 2, characterized in that, When the crystal encapsulation cover is connected to the elongated partition plate, the elongated partition plate and the crystal encapsulation cover are integrally formed.

6. The all-crystal resonator as described in claim 2, characterized in that, When the crystal base is connected to the elongated baffle, the elongated baffle is integrally formed with the crystal base.

7. The all-crystal resonator as described in claim 1, characterized in that, The thinning process is laser processing.

8. The all-crystal resonator as described in any one of claims 1-7, characterized in that, The crystal base, the frame, the crystal support, and the crystal encapsulation cover are all made of quartz crystal.

9. A method for manufacturing an all-crystal resonator, characterized in that, Includes the following steps: A crystal substrate master film is fabricated, the crystal substrate master film having a plurality of first regions, each first region having a crystal substrate, and the crystal substrates of the plurality of first regions being connected together; A resonant master film is fabricated, the resonant master film having a plurality of second regions, each second region having a resonant body, the resonant bodies of the plurality of second regions being connected together, each resonant body including a frame having an accommodating space and a crystal support portion located in the accommodating space and connected to the frame; A crystal encapsulation cover master film is fabricated, the crystal encapsulation cover master film having a plurality of third regions, each third region having a crystal encapsulation cover, the crystal encapsulation covers of the plurality of third regions being connected together, and at least one of each crystal encapsulation cover and each crystal base being provided with a spacer; The crystal base mother plate, the resonant body mother plate, and the crystal encapsulation cover mother plate are sequentially sealed and connected together to form an encapsulation mother plate with multiple sealed cavities. The first region, the second region, the third region, and the sealed cavities correspond one-to-one. Each partition is located in one of the sealed cavities to divide the corresponding sealed cavity into a processing area and a main region. Each partition is spaced apart from the corresponding crystal support to form an oscillation gap. The oscillation frequency of the resonant body in all the second regions is detected; When the oscillation frequency of at least a portion of the resonant body in the second region is lower than a preset oscillation frequency threshold, the portion of the crystal support portion of the resonant body whose oscillation frequency is lower than the preset oscillation frequency threshold in the processing area is thinned. The packaging mother film is cut to obtain a plurality of all-crystal resonators, wherein each all-crystal resonator includes a crystal base, a resonant body and a crystal package cover.

10. The manufacturing method as described in claim 9, characterized in that, Before the step of cutting the packaging mother film to obtain multiple all-crystal resonators, wherein each all-crystal resonator includes a crystal base, a resonant body, and a crystal packaging cover, the method further includes: The oscillation frequency of the resonant body in all the second regions is detected a second time.

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