High-isolation two-dimensional memristor radio frequency switch structure and application thereof

Abstract

The application relates to the field of microelectronics and integrated circuit technology, in particular to a high-isolation two-dimensional memristor radio frequency switch structure and application thereof, the high-isolation two-dimensional memristor radio frequency switch structure comprising a substrate, a radio frequency transmission line arranged on the substrate, and at least one grounded two-dimensional memristor and at least one series two-dimensional memristor. The application adopts a macro radio frequency topology design, in the macro structure, a double-series composite radio frequency topology structure of the series two-dimensional memristor and the grounded two-dimensional memristor is constructed based on the radio frequency transmission line, breakthrough high-frequency isolation, ultra-low insertion loss and low power consumption, high consistency and excellent system application potential are realized. Moreover, the double-series composite radio frequency topology structure can provide a very low impedance grounding discharge path for the leaked radio frequency signal in the off state of the device, and completely solves the physical bottleneck of large off-state capacitance and easy signal coupling leakage of the ultra-thin two-dimensional memristor at high frequency.

Description

Technical Field

[0001] This invention relates to the field of microelectronics and integrated circuit technology, and in particular to a high-isolation two-dimensional memristor radio frequency switch structure and its application. Background Technology

[0002] With the rapid development of 5G and 6G communication technologies, radar systems and satellite communications, radio frequency front-end systems have placed extremely high demands on the performance of radio frequency switches (RF switches), namely, they need to simultaneously meet the requirements of high operating frequency, large bandwidth, low insertion loss (IL), ultra-high isolation (IS) and low static power consumption.

[0003] In recent years, "atomic-level" radio frequency (RF) switches based on two-dimensional materials (such as h-BN and MoS2) have attracted much attention due to their extremely thin thickness, low insertion loss, and high cutoff frequency. Simultaneously, the industry has developed various "van der Waals contact" transfer processes based on polymer-assisted or mechanical lamination (such as using adhesives like polyvinyl alcohol), effectively improving the problems of easy detachment of metal electrodes from two-dimensional thin film surfaces and interface lattice damage. However, existing two-dimensional memristor RF switches exhibit the following serious structural and mechanistic defects when moving towards extremely high-frequency applications such as 6G millimeter waves: The deterioration of high-frequency isolation caused by extremely thin thickness: The ultra-thin characteristics of two-dimensional materials (typically <5nm) are a double-edged sword. While they bring ultra-low insertion loss in the on-state, the extremely close electrode spacing in the off-state (HRS) leads to a very large parasitic off-state capacitance (Coff). In high-frequency bands such as millimeter waves, radio frequency signals are easily coupled and leaked through this parasitic capacitance, causing a sharp drop in the radio frequency isolation of the device, which cannot meet the stringent requirements for high isolation (typically >20dB) in communication systems.

[0004] In summary, although existing two-dimensional radio frequency memristors have achieved non-destructive physical contact in fabrication processes, they still cannot overcome the core contradiction between "low off-state capacitance" and "high isolation" in high-frequency circuit topology design and internal mechanisms.

[0005] Therefore, existing technologies still need to be improved and developed. Summary of the Invention

[0006] In view of the shortcomings of the prior art, the purpose of this invention is to provide a high-isolation two-dimensional memristor RF switch structure and its application, aiming to solve the problems of severe signal leakage and low RF isolation in the high-frequency band of existing two-dimensional atomic-level RF switches due to excessive off-state parasitic capacitance.

[0007] The technical solution of the present invention is as follows: A high-isolation two-dimensional memristor radio frequency switch structure includes a substrate, a radio frequency transmission line disposed on the substrate, and at least one grounded two-dimensional memristor and at least one series-connected two-dimensional memristor. The radio frequency transmission line includes a first signal line, a second signal line, and a ground line; the grounded two-dimensional memristor includes a first two-dimensional resistive switching layer disposed on the side of the ground line away from the substrate, and an intermediate electrode layer disposed on the side of the first two-dimensional resistive switching layer away from the substrate; the series two-dimensional memristor includes a second two-dimensional resistive switching layer disposed on the side of the intermediate electrode layer away from the substrate, and a top electrode layer disposed on the side of the second two-dimensional resistive switching layer away from the substrate; the intermediate electrode layer and the top electrode layer are respectively connected to the first signal line and the second signal line.

[0008] In the high isolation two-dimensional memristor RF switch structure, the substrate material is selected from one of high-resistivity silicon, quartz, sapphire, silicon carbide, and alumina ceramic. Preferably, the thickness of the substrate is 180μm-400μm.

[0009] The high-isolation two-dimensional memristor RF switch structure includes a ground line comprising a first ground line and a second ground line, wherein the first ground line and the second ground line are connected by a series line; the grounded two-dimensional memristor and the series-connected two-dimensional memristor are located on the side of the series line away from the substrate.

[0010] The high-isolation two-dimensional memristor RF switch structure wherein the material of the first two-dimensional resistive switching layer is selected from one or more of hexagonal boron nitride, copper indium phosphorus sulfide, copper chromium phosphorus sulfide, black phosphorus, molybdenum disulfide, tungsten diselenide, and two-dimensional metal-organic frameworks; and the material of the second two-dimensional resistive switching layer is selected from one or more of hexagonal boron nitride, copper indium phosphorus sulfide, copper chromium phosphorus sulfide, black phosphorus, molybdenum disulfide, tungsten diselenide, and two-dimensional metal-organic frameworks.

[0011] The high-isolation two-dimensional memristor RF switch structure has the following characteristics: the thickness of the first two-dimensional resistive switching layer is 5nm-9nm; the thickness of the second two-dimensional resistive switching layer is 5nm-9nm.

[0012] The high-isolation two-dimensional memristor RF switch structure, wherein the structure of the RF transmission line is selected from one of the following: coplanar waveguide structure, microstrip line structure, stripline structure, and grounded coplanar waveguide structure.

[0013] The high-isolation two-dimensional memristor RF switch structure, wherein both the first two-dimensional resistive switching layer and the second two-dimensional resistive switching layer contain pre-defined defect clusters introduced by plasma treatment or electron beam point radiation.

[0014] Application of a high-isolation two-dimensional memristor RF switch structure in a double-pole double-throw switch.

[0015] In the aforementioned application, the double-pole double-throw switch comprises several high-isolation two-dimensional memristor RF switch structures arranged in a symmetrical cross-matrix network architecture on the RF transmission line.

[0016] Application of a high-isolation two-dimensional memristor RF switch structure in distributed microelectromechanical transmission line phase shifters, RF reconfigurable antennas, band-switching filters, RF tunable attenuators, or synaptic devices in RF pulse neural networks.

[0017] Beneficial Effects: This invention provides a high-isolation two-dimensional memristor RF switch structure and its application. The high-isolation two-dimensional memristor RF switch structure includes a substrate, an RF transmission line disposed on the substrate, and at least one grounded two-dimensional memristor and at least one series-connected two-dimensional memristor. The RF transmission line includes a first signal line, a second signal line, and a ground line. The grounded two-dimensional memristor includes a first two-dimensional resistive switching layer disposed on the side of the ground line away from the substrate, and an intermediate electrode layer disposed on the side of the first two-dimensional resistive switching layer away from the substrate. The series-connected two-dimensional memristor includes a second two-dimensional resistive switching layer disposed on the side of the intermediate electrode layer away from the substrate, and a top electrode layer disposed on the side of the second two-dimensional resistive switching layer away from the substrate. The intermediate electrode layer and the top electrode layer are respectively connected to the first signal line and the second signal line. This invention adopts a macroscopic RF topology design. At the macroscopic level, based on the RF transmission line, a dual-series composite RF topology structure combining a series-connected two-dimensional memristor and a grounded two-dimensional memristor is constructed, achieving breakthrough high-frequency isolation, ultra-low insertion loss and low power consumption, as well as high consistency and excellent system application potential. Furthermore, by adopting a dual-series composite RF topology, it can provide an extremely low impedance ground discharge path for leaked RF signals in the device off state, completely solving the physical bottleneck of large off-state capacitance and easy signal coupling leakage of ultra-thin two-dimensional memristors at high frequencies; it significantly improves the limited isolation of single-tube switching (usually <10dB) to more than 20dB, meeting the stringent standards of 5G / 6G millimeter-wave RF front-ends. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of a high-isolation two-dimensional memristor RF switch structure according to the present invention; Figure 2 This is a side view of a partial structure of a high-isolation two-dimensional memristor RF switch structure according to the present invention; Figure 3 A schematic diagram illustrating the working principle of the high-isolation two-dimensional memristor RF switch structure; Figure 4 A schematic diagram of the process flow for the sacrificial polymer-assisted bonding method; Figure 5This is a schematic diagram of a double-pole double-throw (DPDT) radio frequency switch network. Figure 6 The diagram shows the off-state comparison of a high-isolation two-dimensional memristor RF switch structure with dual series structure (black line), series structure (red line), and series-parallel structure (blue line). Figure 7 The diagram shows the on-state comparison of a high-isolation two-dimensional memristor RF switch structure with dual series structure (black line), series structure (red line), and series-parallel structure (blue line). Explanation of reference numerals in the attached figures: substrate 10, radio frequency transmission line 20, first signal line 21, second signal line 22, ground line 23, first ground line 231, second ground line 232, series line 233, grounded two-dimensional memristor 30, first two-dimensional resistive switching layer 31, intermediate electrode layer 32, series two-dimensional memristor 40, second two-dimensional resistive switching layer 41, top electrode layer 42. Detailed Implementation

[0019] This invention provides a high-isolation two-dimensional memristor RF switch structure and its application. To make the objectives, technical solutions, and effects of this invention clearer and more explicit, the invention is further described in detail below. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0020] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0021] Currently, the most widely used commercial RF switches mainly include solid-state switches based on field-effect transistors (FETs) / diodes and microelectromechanical systems (MEMS) switches. Solid-state switches (FETs / PIN diodes), due to their volatility, require continuous bias voltage in both on and off states, resulting in high static power consumption. Furthermore, at high frequencies (millimeter-wave / terahertz), their off-state capacitance significantly increases signal leakage, degrading isolation. While MEMS switches offer excellent isolation, their drive voltage is typically high (>10 V), their switching speed is slow (>1 μs), and their mechanical structure leads to complex manufacturing and packaging processes, resulting in higher costs.

[0022] To address the aforementioned issues, non-volatile memristors have been introduced into the field of RF switching, primarily including bridge-based memristors (CBRAM), valence-state change memristors (RaRAM), and phase-change memristors (PCM). CBRAM: While offering fast switching speeds (nanoseconds) and low on-resistance, its thick resistive switching layer requires the migration of numerous active metal ions during bridge formation, leading to severe damage to the electrode structure, large temporal / spatial variability, and typically necessitating the introduction of additional isolation layers (such as TiN or TaN) to prevent harmful diffusion from the active electrodes. RaRAM: Its on-state resistance (Ron) is typically high (>20Ω), resulting in high insertion loss (IL) on the RF transmission path, which is detrimental to RF signal transmission and is generally only suitable for low-to-medium frequency, low-power applications. Phase-change memristors (PCMs) utilize the switching between crystalline and amorphous states of materials, which provides good robustness. However, the presence of a heater introduces large parasitic capacitance, and the switching energy consumption during the phase change process is relatively high, which is not conducive to the integration of large-scale radio frequency circuits.

[0023] Existing two-dimensional memristor RF switches suffer from three major technical bottlenecks in high-frequency applications (especially in the 5G / 6G millimeter-wave band): "large off-state parasitic capacitance leading to poor isolation", "random generation / breakage of conductive wires leading to low reliability", and "lack of RF system-level integration in single devices". Therefore, there is an urgent need to develop a high-isolation two-dimensional memristor RF switch that can overcome the high-frequency leakage drawbacks of two-dimensional materials and has a specific topological design (such as dual series combination) to meet the application requirements of microwave components such as high-frequency communication phase shifters in the future.

[0024] Based on this, such as Figure 1 and Figure 2 As shown, the present invention provides a high isolation two-dimensional memristor radio frequency switch structure, including a substrate 10, a radio frequency transmission line 20 disposed on the substrate 10, and at least one grounded two-dimensional memristor 30 and at least one series two-dimensional memristor 40. The radio frequency transmission line 20 includes a first signal line 21, a second signal line 22, and a ground line 23; the grounded two-dimensional memristor 30 includes a first two-dimensional resistive switching layer 31 disposed on the side of the ground line 23 away from the substrate 10, and an intermediate electrode layer 32 disposed on the side of the first two-dimensional resistive switching layer 31 away from the substrate 10; the series two-dimensional memristor 40 includes a second two-dimensional resistive switching layer 41 disposed on the side of the intermediate electrode layer 32 away from the substrate 10, and a top electrode layer 42 disposed on the side of the second two-dimensional resistive switching layer 41 away from the substrate 10; the intermediate electrode layer 32 and the top electrode layer 42 are respectively connected to the first signal line 21 and the second signal line 22.

[0025] In this embodiment, a macroscopic RF topology design is adopted. At the macroscopic level, a dual-series composite RF topology structure is constructed based on RF transmission lines, combining a series two-dimensional memristor and a grounded two-dimensional memristor. This achieves breakthrough high-frequency isolation, ultra-low insertion loss, low power consumption, high consistency, and excellent system application potential. Furthermore, the dual-series composite RF topology provides an extremely low-impedance ground discharge path for leaked RF signals in the device's off-state, completely solving the physical bottleneck of large off-state capacitance and easy signal coupling leakage in ultra-thin two-dimensional memristors at high frequencies. This significantly improves the limited isolation of a single-transistor switch (typically <10dB) to over 20dB, meeting the stringent standards of 5G / 6G millimeter-wave RF front-ends.

[0026] Specifically, the high isolation two-dimensional memristor RF switch structure provided by the present invention has the following advantages: 1) Breakthrough high-frequency isolation (ultra-low leakage): The dual-series composite topology, in the off-state, effectively guides the leakage RF signal generated by the extremely thin two-dimensional material to the ground line through the downlink series branch; simultaneously, precise defect engineering ensures clean breakage of the conductive wire, minimizing residual conductance and parasitic capacitance (C) in the off-state. off The isolation level is reduced to a minimum; the combination of the two allows devices with a high-isolation two-dimensional memristor RF switch structure to maintain extremely high RF isolation (>20dB) at extremely high frequencies (covering 5G / 6G bands).

[0027] 2) Ultra-low insertion loss and low power consumption (lossless transmission): The ground wire, the first two-dimensional resistive switching layer, the intermediate electrode layer, the second two-dimensional resistive switching layer, and the top electrode layer are all connected by van der Waals physical contacts. These van der Waals contact interfaces eliminate lattice damage caused by traditional metal deposition, significantly reducing contact resistance (R0). on By combining the atomic-level thickness of two-dimensional materials, extremely low radio frequency signal insertion loss (IL < 0.5dB) and ultra-low switching power consumption are achieved.

[0028] 3) High consistency and excellent system application potential: Defect control completely overcomes the randomness of the generation and breakage of conductive wires in traditional memristors, significantly improving the performance consistency and cycle tolerance between devices; on the basis of this excellent performance, the present invention successfully realizes the integrated application of a high-isolation two-dimensional memristor RF switch structure, providing a highly reliable hardware foundation for future high-efficiency and reconfigurable RF microwave front-end systems.

[0029] In this embodiment, the working principle of the high-isolation two-dimensional memristor RF switch structure provided by the present invention is explained in conjunction with its high isolation characteristics, including: 1) ON-state: A set voltage (SET voltage) is applied to the series-connected two-dimensional memristor 40, causing the internal nano-conductive filaments to form along a preset defect path (low-resistance state LRS); simultaneously, a reset voltage (RESET voltage) is applied to the grounded two-dimensional memristor 30 to turn it off (high-resistance state HRS). The radio frequency signal is transmitted along the signal line with low loss; due to the extremely low contact resistance of the van der Waals contact, the insertion loss (IL) is minimal.

[0030] 2) Off-state: A RESET voltage (HRS) is applied to the series-connected two-dimensional memristor 40, and a SET voltage (LRS) is applied to the grounded two-dimensional memristor 30. In this state, even if the first two-dimensional resistive switching layer 31 and the second two-dimensional resistive switching layer 41 of the extremely thin two-dimensional material generate parasitic capacitance (C) at the series break point... off This causes some high-frequency signals to couple and leak. The switched-on switch immediately guides this leaked signal directly to the ground wire 23. Simultaneously, the artificial defect controls the clean breakage of the conductive wire, further reducing the intrinsic C. off Through the combined action of the grounded two-dimensional memristor 30 and the series-connected two-dimensional memristor 40, deep isolation of radio frequency signals is achieved, such as... Figure 3 As shown.

[0031] In some embodiments, the spatial connection relationship of the high-isolation two-dimensional memristor RF switch structure includes: the series two-dimensional memristor 40 is bridged between disconnected RF signal lines; one end of the grounded two-dimensional memristor 30 is connected to the signal line, and the other end is connected to the ground line of the CPW. The cooperative operating modes include: when the system needs to conduct RF signals (ON-state), the series two-dimensional memristor 40 is placed in a low-impedance state (LRS), and the grounded two-dimensional memristor 30 is placed in a high-impedance state (HRS); when the system needs to isolate RF signals (OFF-state), the series two-dimensional memristor 40 is placed in HRS, and the grounded two-dimensional memristor 30 is forced into LRS to absorb leakage signals.

[0032] In some embodiments, the substrate is made of a material selected from high-resistivity silicon (resistivity >10 kΩ·cm), quartz, sapphire, silicon carbide, and alumina ceramic; the substrate has high resistance insulation and can be used to carry devices and reduce the dielectric loss and eddy current loss of radio frequency signals in the substrate.

[0033] In some embodiments, the thickness of the substrate is 180 μm-400 μm. Substrates within this thickness range can significantly reduce dielectric loss and parasitic coupling effects in radio frequency transmission; at the same time, they can effectively suppress interference from high-order resonant films and surface wave interference, avoiding cavity resonance and stray signal coupling problems that are prone to occur with thick substrates.

[0034] In some embodiments, the ground line 23 includes a first ground line 231 and a second ground line 232, which are connected by a series line 233; the grounded two-dimensional memristor 30 and the series two-dimensional memristor 40 are located on the side of the series line 233 away from the substrate 10.

[0035] In some implementations, the radio frequency transmission line is made of a metal defined by conventional photolithography processes, such as gold (Au) or silver (Ag).

[0036] In some embodiments, the series line 233 is used as the low electrode, and a two-dimensional material with atomic-level thickness is used to cover a specific switching region of the bottom electrode as a resistive switching layer, including a first two-dimensional resistive switching layer and a second two-dimensional resistive switching layer.

[0037] In some embodiments, the first two-dimensional resistive switching layer is selected from one or more of hexagonal boron nitride (h-BN), copper indium phosphorus sulfide (CIPS), copper chromium phosphorus sulfide (CCPS), black phosphorus (BP), molybdenum disulfide (MoS2), tungsten diselenide (WSe2), and two-dimensional metal-organic frameworks (MOFs), or other transition metal chalcogenides (TMDCs) with similar layered structures; the second two-dimensional resistive switching layer is selected from one or more of hexagonal boron nitride, copper indium phosphorus sulfide, copper chromium phosphorus sulfide, black phosphorus, molybdenum disulfide, tungsten diselenide, and two-dimensional metal-organic frameworks, or other transition metal chalcogenides (TMDCs) with similar layered structures. A heterojunction (e.g., Graphene / h-BN / Graphene or WSe2 / MoS2) formed by stacking a single material or multiple layers of different two-dimensional materials can be used as the resistive switching layer to achieve the technical effects of this invention.

[0038] In some embodiments, the top electrode layer 42 and the second two-dimensional resistive switching layer 41 form a van der Waals (vdW) physical adsorption contact interface without chemical covalent bonds and without amorphous lattice damage. The methods for obtaining this van der Waals physical contact interface include, but are not limited to: sacrificial polymer (such as PVA, PMMA, PPC, etc.) assisted bonding method, dry mechanical polymer (such as PDMS) transfer lamination method, thermal release tape (TRT) transfer method, and even ultra-low rate metal atom soft landing deposition method under liquid nitrogen cryogenic environment. Among these, the sacrificial polymer assisted bonding method involves using polymers such as polyvinyl alcohol (PVA), PMMA, or thermal release tape as a sacrificial layer or adhesive to bond the prefabricated electrode to the surface of the two-dimensional material. A schematic diagram of the process flow is shown below. Figure 4 As shown. The dry mechanical polymer transfer lamination method uses PDMS polymer stamps to directly and physically align and laminate the metal electrodes onto the resistive switching layer. The low-temperature ultra-low-rate deposition method evaporates the metal with an ultra-low-rate electron beam in a cryogenic liquid nitrogen environment, forming a soft-landing, non-destructive interface.

[0039] Specifically, polymer-assisted bonding methods include: electrode transfer using spin-coated polyvinyl alcohol (PVA) aqueous solution cured by heat as an adhesive for patterned electrodes; dry / wet mechanical peeling transfer using polypropylene carbonate (PPC), polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), or thermal release tape (TRT) to mechanically peel off and align the pre-prepared top electrode onto the surface of a two-dimensional material; soft-landing using ultra-low-rate electron beam evaporation in a cryogenic liquid nitrogen environment to achieve non-destructive van der Waals electrode film formation by consuming the kinetic energy of incident metal atoms at low temperatures; and flip-chip bonding and deformation where an independent substrate with a two-dimensional resistive switching layer is directly flipped and pressed onto a substrate with a pre-fabricated CPW bottom electrode network, achieving van der Waals electrical contact through external pressure or gold-gold thermocompression bonding.

[0040] In some embodiments, the structure of the radio frequency transmission line is selected from one of the following: coplanar waveguide (CPW) structure, microstrip structure, stripline structure, and grounded coplanar waveguide (GCPW) structure.

[0041] Specifically, this invention introduces a "series-series composite architecture" from microwave radio frequency circuits at the device physical level. Based on a coplanar waveguide (CPW) transmission line, at least one "grounded two-dimensional memristor" and at least one "series two-dimensional memristor" are integrated in the same tiny region. In the off state, the conducting parallel switch provides an extremely low impedance direct ground path for leaked high-frequency signals, completely cutting off forward signal leakage from a macroscopic electromagnetic topology perspective.

[0042] In some embodiments, both the first two-dimensional resistive switching layer 31 and the second two-dimensional resistive switching layer 41 contain pre-defined defect clusters introduced by plasma treatment or electron beam point irradiation, serving as low-barrier confinement channels for ion migration.

[0043] In some embodiments, the top electrode layer 42 is connected across the second two-dimensional resistive switching layer 41 to complete the circuit closed loop; and the top electrode layer 42 forms a lattice-damage-free "van der Waals (vdW) physical contact" interface between the second two-dimensional resistive switching layer 41.

[0044] In addition, the present invention also provides an application of a high-isolation two-dimensional memristor RF switch structure in a double-pole double-throw switch.

[0045] In some embodiments, the double-pole double-throw switch includes a plurality of the high-isolation two-dimensional memristor RF switch structures arranged in a symmetrical cross-matrix network architecture on the RF transmission line.

[0046] Specifically, such as Figure 5 As shown, a symmetrical cross-matrix network architecture is constructed on an RF transmission line (such as a coplanar waveguide or microstrip line) using multiple high-isolation two-dimensional memristor RF switch structures, forming a double-pole double-throw (DPDT) RF switch network. In the figure, G represents the ground line and S represents the signal line. At the narrowing section of the signal line, the grounded two-dimensional memristor and the series-connected two-dimensional memristor are stacked sequentially between the ground line and the signal line. By coordinating the on and off states of the switch units on different bridge arms in the matrix network, the routing path of the RF signal can be flexibly configured, thereby accurately realizing the double-pole double-throw (DPDT) switching and cross-interconnection of two independent RF signals between four different ports. Due to the extremely high port isolation and low parasitic capacitance of each basic switch unit, this DPDT device effectively suppresses crosstalk when multiple signals are concurrent in the millimeter-wave band, exhibiting extremely low insertion loss and excellent signal integrity.

[0047] In some implementations, the dual-pole double-throw (DPDT) radio frequency switch network may employ a T-type network, a Π-type network, a bridge network (Bridge T), or a more complex multi-port matrix switch (such as SP4T), depending on the actual microwave circuit requirements.

[0048] In some implementations, the high-isolation two-dimensional memristor RF switch structure can also be applied to a single-pole multiple-throw (SPnT) matrix structure.

[0049] In some embodiments, a microwave component—a switch-type RF phase shifter—is further constructed based on the high-isolation two-dimensional memristor RF switch structure; the switch-type RF phase shifter includes an RF transmission line network, and a plurality of the high-isolation two-dimensional memristor RF switch structures are loaded in the RF transmission line network.

[0050] In some embodiments, the high-isolation two-dimensional memristor RF switch structure of the present invention adopts a dual-series-series composite RF topology, which provides an extremely low-impedance ground discharge path for leaked RF signals in the device off-state, completely solving the physical bottleneck of large off-state capacitance and easy signal coupling of ultra-thin two-dimensional memristors at high frequencies; it significantly improves the limited isolation of single-tube switches (typically <10dB) to over 20dB, meeting the stringent standards of 5G / 6G millimeter-wave RF front-ends; in addition, van der Waals (vdW) physical contacts are used between the electrodes and the resistive switching layer. Compared with traditional photolithography-defined electrodes or high-energy particle deposition electrodes, van der Waals physical contacts eliminate lattice bombardment of the two-dimensional material surface, avoid amorphous damage layers and Fermi level pinning, and greatly reduce the interface contact resistance (R). on This results in extremely low insertion loss (IL < 0.5 dB) for the RF switch in the on state and significantly reduces switching power consumption.

[0051] 1. Off-state isolation analysis (based on) Figure 6 ) Figure 6 The isolation capability of three structures for radio frequency signals (up to 67 GHz) in the OFF-state was demonstrated.

[0052] Data comparison: At the high frequency of 67GHz, the isolation of the traditional planar series-parallel structure (blue line) is -22.4dB, the traditional single series structure (red line) is -23.2dB, while the vertical integrated dual series structure (black line) proposed in this invention achieves the lowest signal transmission and an isolation of up to -26.0dB.

[0053] Mechanism Analysis: Compared to the traditional single-series structure, the dual-series architecture of this invention provides a low-impedance ground discharge path for leaked RF signals when turned off, through the conducting series branch. Simultaneously, the vertically integrated physical stacking design minimizes parasitic capacitive coupling between nodes, thus achieving optimal high-frequency isolation through the combined effects of microscopic and macroscopic topologies.

[0054] 2. Open-state insertion loss analysis (based on...) Figure 7 ) Figure 7 The insertion loss of the three structures during radio frequency signal transmission in the ON-state is shown.

[0055] Data comparison: At a high frequency of 67GHz, the insertion loss of the traditional planar series-parallel structure (blue line) is -1.88dB, the traditional single series structure (red line) is -1.77dB, while the vertical integrated dual series structure (black line) proposed in this invention has the lowest loss, at only -1.71dB.

[0056] Mechanism Analysis: Typically, introducing parallel switching branches (such as the blue line) increases parasitic effects on the RF signal transmission path, leading to a worse insertion loss compared to a single series structure. However, this invention employs a "vertical three-dimensional stacked structure with a shared intermediate electrode layer." This vertical integration significantly shortens the physical transmission path of the RF signal (to only the thickness of an atomically small resistive switching layer), effectively offsetting the additional losses caused by the parallel branches. As a result, the insertion loss of this invention's structure is even better than that of traditional single series devices.

[0057] 3. Overall Conclusion This invention proposes a high-isolation two-dimensional memristor RF switch structure. By combining a macroscopic vertical series-parallel topology with a microscopic van der Waals physical lossless contact, it successfully breaks the traditional trade-off between "high isolation" and "low insertion loss" in RF switches. In the millimeter-wave band up to 67 GHz, this structure simultaneously achieves ultra-low insertion loss (-1.71 dB) and extremely high isolation (-26.0 dB), demonstrating its enormous application potential in future 5G / 6G high-performance RF front-ends and reconfigurable microwave systems (such as double-pole double-throw switches, phase shifters, etc.).

[0058] In addition, the present invention provides an application of a high-isolation two-dimensional memristor RF switch structure in distributed microelectromechanical transmission line (DMTL) phase shifters, RF reconfigurable antennas, band-switching filters, RF adjustable attenuators, or synaptic devices in RF pulse neural networks (RF SNNs).

[0059] In summary, this invention provides a high-isolation two-dimensional memristor RF switch structure and its application. The high-isolation two-dimensional memristor RF switch structure includes a substrate, an RF transmission line disposed on the substrate, and at least one grounded two-dimensional memristor and at least one series-connected two-dimensional memristor. The RF transmission line includes a first signal line, a second signal line, and a ground line. The grounded two-dimensional memristor includes a first two-dimensional resistive switching layer disposed on the side of the ground line away from the substrate, and an intermediate electrode layer disposed on the side of the first two-dimensional resistive switching layer away from the substrate. The series-connected two-dimensional memristor includes a second two-dimensional resistive switching layer disposed on the side of the intermediate electrode layer away from the substrate, and a top electrode layer disposed on the side of the second two-dimensional resistive switching layer away from the substrate. The intermediate electrode layer and the top electrode layer are respectively connected to the first signal line and the second signal line. This invention adopts a macroscopic RF topology design. At the macroscopic level, it constructs a dual-series composite RF topology structure based on the RF transmission line, combining a series-connected two-dimensional memristor and a grounded two-dimensional memristor, achieving breakthrough high-frequency isolation, ultra-low insertion loss and low power consumption, as well as high consistency and excellent system application potential. Furthermore, by adopting a dual-series composite RF topology, it can provide an extremely low impedance ground discharge path for leaked RF signals in the device off state, completely solving the physical bottleneck of large off-state capacitance and easy signal coupling leakage of ultra-thin two-dimensional memristors at high frequencies; it significantly improves the limited isolation of single-tube switching (usually <10dB) to more than 20dB, meeting the stringent standards of 5G / 6G millimeter-wave RF front-ends.

[0060] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A high-isolation two-dimensional memristor RF switch structure, characterized in that, It includes a substrate, a radio frequency transmission line disposed on the substrate, and at least one grounded two-dimensional memristor and at least one series-connected two-dimensional memristor; The radio frequency transmission line includes a first signal line, a second signal line, and a ground line; the grounded two-dimensional memristor includes a first two-dimensional resistive switching layer disposed on the side of the ground line away from the substrate, and an intermediate electrode layer disposed on the side of the first two-dimensional resistive switching layer away from the substrate; the series two-dimensional memristor includes a second two-dimensional resistive switching layer disposed on the side of the intermediate electrode layer away from the substrate, and a top electrode layer disposed on the side of the second two-dimensional resistive switching layer away from the substrate; the intermediate electrode layer and the top electrode layer are respectively connected to the first signal line and the second signal line.

2. The high isolation two-dimensional memristor RF switch structure according to claim 1, characterized in that, The substrate is selected from one of the following materials: high-resistivity silicon, quartz, sapphire, silicon carbide, and alumina ceramic. Preferably, the thickness of the substrate is 180μm-400μm.

3. The high isolation two-dimensional memristor RF switch structure according to claim 1, characterized in that, The ground wire includes a first ground wire and a second ground wire, which are connected by a series line; the grounded two-dimensional memristor and the series two-dimensional memristor are located on the side of the series line away from the substrate.

4. The high isolation two-dimensional memristor RF switch structure according to claim 1, characterized in that, The material of the first two-dimensional resistive switching layer is selected from one or more of hexagonal boron nitride, copper indium phosphorus sulfide, copper chromium phosphorus sulfide, black phosphorus, molybdenum disulfide, tungsten diselenide, and two-dimensional metal-organic frameworks; the material of the second two-dimensional resistive switching layer is selected from one or more of hexagonal boron nitride, copper indium phosphorus sulfide, copper chromium phosphorus sulfide, black phosphorus, molybdenum disulfide, tungsten diselenide, and two-dimensional metal-organic frameworks.

5. The high isolation two-dimensional memristor RF switch structure according to claim 1, characterized in that, The thickness of the first two-dimensional resistive switching layer is 5nm-9nm; the thickness of the second two-dimensional resistive switching layer is 5nm-9nm.

6. The high isolation two-dimensional memristor RF switch structure according to claim 1, characterized in that, The structure of the radio frequency transmission line is selected from one of the following: coplanar waveguide structure, microstrip line structure, stripline structure, and grounded coplanar waveguide structure.

7. The high isolation two-dimensional memristor RF switch structure according to claim 1, characterized in that, Both the first two-dimensional resistive switching layer and the second two-dimensional resistive switching layer contain pre-defined defect clusters introduced by plasma treatment or electron beam irradiation.

8. The application of a high-isolation two-dimensional memristor RF switch structure as described in any one of claims 1-7 in a double-pole double-throw switch.

9. The application according to claim 8, characterized in that, The double-pole double-throw switch includes several high-isolation two-dimensional memristor RF switch structures arranged in a symmetrical cross-matrix network architecture on the RF transmission line.

10. The application of a high-isolation two-dimensional memristor RF switch structure as described in any one of claims 1-7 in a synaptic device in a distributed microelectromechanical transmission line phase shifter, an RF reconfigurable antenna, a band-switching filter, an RF tunable attenuator, or an RF pulse neural network.

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