Heating device and heating method for moving parts in a plasma processing device

Abstract

The present specification provides a heating device and a heating method for a moving part in a plasma processing device, by means of a heating part made of a magnetic conductive material, and the heating part constitutes a toroidal magnetic field loop, the heating part moves with the moving part, and the excitation part is fixedly arranged on the chamber side wall, the alternating current magnetic field generated by the excitation part is magnetically coupled with the heating part, so as to generate an induced current in the heating part, the heating part generates heat and transmits heat to the moving part. Thus, the heating energy is transmitted to the heating part moving with the moving part through the alternating current magnetic field, the heating part does not need to be connected with the external power supply through the follow-up power supply line, the line supplying power to the excitation part also does not need to move with the moving part, thereby reducing the path of the radio frequency signal transmitted along the follow-up power supply line to the vicinity of the vacuum sealed bellows, and reducing the risk of discharge between the heating power supply path and the radio frequency power transmission path of the upper electrode.

Description

Technical Field

[0001] This specification relates to the field of semiconductor equipment technology, and more specifically, to a heating device and heating method for a moving part in a plasma processing apparatus. Background Technology

[0002] Currently, in CCP plasma etching equipment, process gases are radio frequency dissociated to form plasma for etching the wafer. During the process, small molecules of fluorocarbons decomposed from the process gases easily diffuse to the surface of lower-temperature moving parts (such as moving rings and shielding rings) and deposit as polymers. These polymers can contaminate the wafer surface in subsequent processes. Therefore, it is necessary to heat the moving parts to inhibit polymer deposition.

[0003] In related technologies, using resistance heating elements to heat moving parts involves introducing the power supply wires of the resistance heating elements into the cavity of the CCP plasma etching equipment along the support structure of the moving part. In CCP plasma etching equipment, due to the strong radio frequency field within the cavity, radio frequency coupling easily occurs between the power supply wires, support structure, and metal components such as bellows, resulting in an unintended radio frequency potential near the bellows. Since the bellows are typically located near the main radio frequency circuit or ground circuit, under high radio frequency power conditions, this unintended radio frequency potential may create a large local potential difference between it and the potential of adjacent components, thereby increasing the risk of discharge. Summary of the Invention

[0004] To provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. This summary is not intended as a general commentary, nor is it intended to identify key / important components or describe the scope of protection of these embodiments, but rather as a prelude to the detailed description that follows.

[0005] In a first aspect, embodiments of this specification provide a heating device for a moving part in a plasma processing apparatus, comprising: a heating part and at least one excitation part; The heating element is made of a magnetically conductive material and forms a ring magnetic field circuit; One side of the moving component faces the reaction space of the plasma processing device, and the other side is in close contact with the heating part, so that the moving component and the heating part are thermally coupled; The excitation unit is disposed on the side wall of the chamber of the plasma processing device; During the operation of the plasma processing device, the heating part moves with the moving component and is magnetically coupled with the excitation part to generate heat under the action of the alternating magnetic field generated by the excitation part, thereby heating the moving component.

[0006] Secondly, embodiments of this specification also provide a method for heating a moving part in a plasma processing apparatus, wherein at least one excitation part is provided on the side wall of the chamber of the plasma processing apparatus, and a heating part is provided on the outer side of the moving part of the plasma processing apparatus, wherein the excitation part and the heating part are electrically isolated; the method includes: During the operation of the plasma processing device, the excitation unit generates an alternating magnetic field; The heating element moves with the moving component and is magnetically coupled to the excitation element, so as to generate heat under the action of the alternating magnetic field generated by the excitation element, thereby heating the moving component.

[0007] The heating device for the moving parts in the plasma processing apparatus provided in the embodiments of this specification can achieve the following technical effects: By positioning one side of the moving component towards the reaction space and the other side in close contact with the heating element, which is made of magnetically conductive material and forms a ring-shaped magnetic field loop, the moving component and the heating element are thermally coupled, and the heating element moves with the moving component. Simultaneously, the excitation unit is positioned on the side wall of the chamber, allowing the alternating magnetic field generated by the excitation unit to magnetically couple with the heating element, thereby inducing a current within the heating element. Thus, the heating element can generate heat and transfer it to the moving component through thermal coupling, heating the moving component. Since the heating energy is transferred to the heating element moving with the moving component via the alternating magnetic field, the heating element does not need to be connected to an external power source via a follow-up power supply line, and the power supply line to the excitation unit does not need to move with the moving component. This reduces the path of the radio frequency signal along the follow-up power supply line to the vicinity of the vacuum-sealed bellows, reducing the risk of discharge between the heating power supply path and the upper electrode radio frequency power transmission path while adapting to the movement of the moving component and heating it.

[0008] Furthermore, when the alternating magnetic field generated by the excitation section is distributed circumferentially relative to the annular heating section and forms a closed magnetic circuit within the heating section, the alternating magnetic field can change along the closed magnetic circuit, causing the heating section to generate heat in the circumferential direction, thereby improving the uniformity of heating of the heating section and the moving parts in the circumferential direction.

[0009] Furthermore, when a receiving groove extending along the moving direction of the moving member is provided on the side of the heating section facing the excitation section, the receiving groove can provide space for the heating section, which moves with the moving member, to move relative to the fixed excitation section. When the moving member moves to the process position and the excitation section is located at the upper end of the receiving groove, the alternating magnetic field generated by the excitation section can couple with the magnetic material around the receiving groove and be constrained in the heating section. This reduces the diffusion of the alternating magnetic field into the plasma reaction space inside the moving member without hindering the movement of the moving member, thereby reducing the interference of the alternating magnetic field on the plasma processing process.

[0010] Furthermore, when the radial thickness of the heating section is greater than the radial thickness of the excitation section, the heating section region corresponding to the excitation section can be provided with a thicker magnetic conductive material, so that the alternating magnetic field generated by the excitation section is mainly distributed within the heating section, thereby reducing the diffusion of the alternating magnetic field to areas outside the heating section and reducing the interference of the alternating magnetic field on the plasma reaction space.

[0011] Furthermore, when at least two excitation units are arranged circumferentially on the side wall of the chamber along the heating unit, each excitation unit can be magnetically coupled to the same annular heating unit at different circumferential positions, thereby exciting the heating unit from multiple circumferential positions, thereby reducing the heating difference between different circumferential positions of the heating unit and improving the uniformity of heating of the moving part along the circumferential direction.

[0012] Furthermore, by limiting the distance between the opposing surfaces of the excitation section and the heating section to 1 mm to 5 mm, the excitation section and the heating section can maintain a small magnetic coupling distance, reduce the diffusion of the alternating magnetic field generated by the excitation section outward between them, and allow more alternating magnetic fields to couple with the heating section, thereby improving the magnetic coupling effect between the excitation section and the heating section.

[0013] Furthermore, when the power module is placed on the atmospheric side outside the chamber sidewall and AC power is output to the excitation unit fixed on the chamber sidewall via a wire, the power module, the excitation unit, and the power supply line connecting the two do not need to move with the moving parts, thereby avoiding the formation of a power supply line extending from the atmospheric side to the follow-up heating unit, further reducing the risk of leakage or discharge in the heating power supply path under radio frequency environment.

[0014] Furthermore, by installing an insulating device that penetrates the side wall of the chamber, and by connecting the power supply module's lead wires to the excitation unit after passing through the insulating device, both the lead wires and the excitation unit can be electrically isolated from the side wall of the chamber. This structurally blocks the conductive path between the power supply line of the excitation unit and the side wall of the chamber, thereby reducing the risk of leakage or discharge during the power supply process of the excitation unit.

[0015] Furthermore, when an electrical isolation feedthrough structure is used as an insulation device, it is possible to keep the wires and excitation unit electrically isolated from the chamber sidewall while the wires pass through the chamber sidewall and connect the power module on the atmospheric side to the excitation unit on the vacuum side. This provides a specific structural implementation method for the through-wall power supply and electrical isolation of the excitation unit.

[0016] Furthermore, when the power module includes an AC power supply and an RF filter disposed between the AC power supply and the excitation unit, the AC power supply can provide the excitation unit with AC current for generating an AC magnetic field, and the RF filter can suppress the RF signal from entering the AC power supply along the power supply line of the excitation unit, thereby reducing the risk of leakage caused by the RF signal entering the power module.

[0017] Furthermore, when the excitation unit is configured as an excitation coil surrounding an iron core, the excitation coil can generate an alternating magnetic field under the action of alternating current. The iron core located in the area surrounded by the excitation coil can provide a magnetic path for the alternating magnetic field, so that the excitation unit generates and guides the alternating magnetic field for magnetic coupling with the heating unit, thus forming a specific implementation of the excitation unit.

[0018] Furthermore, when the heating part is made of at least one of the following magnetically conductive materials: pure iron, ferritic stainless steel, or cobalt-iron soft magnetic alloys, the heating part can be magnetically coupled with the alternating magnetic field generated by the excitation part, and can generate heat under the action of the alternating magnetic field, thereby converting the energy transferred through magnetic coupling into heat for heating the moving parts.

[0019] Furthermore, when the moving part is set as a moving ring, a shielding ring, or an inner liner, the magnetic coupling heating method between the follow-up heating part and the fixed excitation part can be applied to the above-mentioned different types of moving parts, so that the corresponding moving parts can be heated without setting up a follow-up power supply line for the corresponding moving parts.

[0020] Furthermore, when the excitation unit is positioned on the side wall of the chamber at a position corresponding to the high position during the lifting and lowering stroke of the moving ring, when the moving ring moves to that high position, the heating unit that moves with the moving ring can reach the position corresponding to the excitation unit and magnetically couple with the excitation unit, thereby heating the moving ring when it is at that high position.

[0021] Furthermore, heating the moving part to above 80°C or above 100°C can increase the surface temperature of the moving part; when the moving part is a moving ring used in fluorocarbon etching processes, it can suppress the formation of polymers on the inner surface of the moving ring by small fluorocarbon molecules, thereby reducing wafer particle contamination caused by polymer cracking and shedding.

[0022] The heating method for moving parts in the plasma processing apparatus provided in this specification can achieve the following technical effects: By generating an alternating magnetic field through an excitation unit fixed to the side wall of the chamber, and moving a heating unit located outside the moving component to a position where it can magnetically couple with the excitation unit, the electrically isolated excitation and heating units use the alternating magnetic field as an energy transfer medium. The heating unit generates heat under the influence of the alternating magnetic field and transfers the generated heat to the moving component. Therefore, the heating unit does not need to be directly powered from an external power source via a conductive connection, and the power supply line to the excitation unit does not need to move with the moving component. This reduces the number of power supply lines to the moving heating unit while adapting to the movement of the moving component and heating it, thus lowering the risk of discharge between the heating power supply path and the upper electrode RF power transmission path.

[0023] Furthermore, when the alternating magnetic field generated by the excitation section is distributed circumferentially relative to the heating section and forms a closed magnetic circuit within the heating section, the alternating magnetic field can undergo periodic changes along the closed magnetic circuit, causing the heating section to generate heat circumferentially and transfer the heat to the moving part, thereby improving the uniformity of heating of the moving part circumferentially.

[0024] Furthermore, a receiving groove extending along the moving direction of the moving component is provided on the side of the heating part facing the excitation part. When the heating part moves to the process position with the moving component and the excitation part is located in the receiving groove, the receiving groove can provide space for the movement of the heating part relative to the fixed excitation part. The alternating magnetic field generated by the excitation part can be magnetically coupled with the heating part around the receiving groove and confined in the heating part, thereby causing the heating part to generate heat in the process position, while reducing the diffusion of the alternating magnetic field into the plasma reaction space inside the moving component.

[0025] The above general description and the descriptions below are exemplary and explanatory only, and are not intended to limit this specification. Attached Figure Description

[0026] One or more embodiments are illustrated by way of example with reference to the accompanying drawings. These illustrations and drawings do not constitute a limitation on the embodiments. Elements having the same reference numerals in the drawings are shown as similar elements. The drawings are not to be scaled. And wherein: Figure 1 This is a top view schematic diagram of the heating device for a moving part in a plasma processing apparatus according to an embodiment of this specification.

[0027] Figure 2 for Figure 1 A schematic diagram of the cross-sectional structure along the AA direction.

[0028] Figure 3 This is a flowchart illustrating a heating method for a moving component in a plasma processing apparatus as described in an embodiment of this specification.

[0029] Icons: 10, Moving ring; 20, Heating section; 30, Excitation section; 31, Excitation coil; 32, Iron core; 40, Chamber sidewall; 50, Power module; 51, AC power supply; 52, RF filter; 60, Insulation device; 70, Receiving slot. Detailed Implementation

[0030] To illustrate the technical content of this specification in more detail, the examples in this specification are described in detail below with reference to the accompanying drawings. The drawings are for illustrative purposes only and are not intended to limit this specification. For ease of explanation, the following technical description lists several specific details to fully illustrate the disclosed examples. However, the corresponding examples may be implemented even without these specific details. In other cases, simplified representations are used to simplify the drawings.

[0031] The terms "first," "second," etc., used in this specification, claims, and drawings are used to distinguish similar objects and are not intended to limit a specific order or sequence. It should be understood that, where appropriate, the objects distinguished by these terms can be used interchangeably. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.

[0032] In this specification, the terms "upper," "lower," "inner," "middle," "outer," "front," and "rear," etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings. These terms are primarily used to describe this specification and its examples, and are not intended to limit the indicated devices, elements, or components to having a specific orientation, or to require them to be constructed and operated in a specific orientation. Some of the above terms may also have other meanings besides indicating orientations or positional relationships. For example, the term "upper" may also indicate a dependency or connection relationship in certain circumstances. Those skilled in the art will understand the specific meaning of these terms in this specification based on the specific circumstances.

[0033] Furthermore, the terms "set up," "connect," and "fix" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can also be an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of the above terms in this specification according to the specific circumstances.

[0034] Unless otherwise stated, the term "multiple" means two or more.

[0035] In this specification, the character " / " indicates an "OR" relationship between the preceding and following objects. For example, A / B means A or B.

[0036] The term "and / or" is used to describe the relationship between objects. For example, A and / or B means either A or B, or it means A and B.

[0037] It should be noted that, where there is no conflict, the examples and features in this specification can be combined with each other.

[0038] Plasma processing devices generate plasma within a chamber by radio frequency dissociation of process gases. Taking a capacitively coupled plasma etching device as an example, the chamber contains an upper electrode and a lower electrode or base body for supporting the wafer, with a moving ring positioned around the wafer.

[0039] The applicant's application CN113130284B describes the basic structure of a moving ring. The moving ring is connected to a lifting rod and moves up and down within the chamber under the action of the lifting rod. A vacuum-sealed bellows is located on the outside of the lifting rod to maintain a vacuum seal within the chamber during the lifting rod's movement. A connecting seat is located on the side wall of the chamber and grounded; the lifting rod is connected to the chamber via the connecting seat.

[0040] In fluorocarbon etching processes, small molecules of fluorocarbons decomposed from the etching gas may diffuse into the moving ring and deposit as polymers on its inner surface. These polymers may crack and detach during subsequent processes. When the detached polymer falls onto the wafer below, it can cause particulate contamination on the wafer.

[0041] To suppress the aforementioned polymer deposition, the moving ring can be heated. One related heating method involves placing a resistance heating element inside or outside the moving ring. An external power source supplies power to the resistance heating element via a power supply wire that passes from the atmospheric environment through the internal space of the lifting rod and into the vacuum environment within the chamber. As the moving ring rises and falls, the power supply wire connected to the resistance heating element forms a follow-up power supply circuit.

[0042] In a radio frequency (RF) environment, the RF signal from the resistive heating element may propagate outward along the power supply wires to the vicinity of the conductive vacuum-sealed bellows; the RF signal from the upper electrode's RF power transmission path will also reach this area. A phase difference may exist between the two RF signals, creating a voltage difference between the two conductive paths. Especially under conditions where the RF power exceeds 5kW, this voltage difference is high, and the two conductive paths are close together near the vacuum-sealed bellows. According to the discharge law described by the Paschen curve, the high voltage difference combined with the small distance easily leads to discharge, causing circuit damage and preventing the entire plasma processing device from operating stably for extended periods.

[0043] Therefore, while the resistance heating element can heat the moving ring to suppress polymer deposition, its power supply wires need to move with the moving ring and extend to the vicinity of the vacuum-sealed bellows, posing a risk of discharge in high-RF power environments. Thus, it is necessary to reduce the risk of discharge between the heating power supply path and the upper electrode RF power transmission path while simultaneously heating the moving component and accommodating its movement.

[0044] Based on the above technical requirements, this specification provides a heating device for a moving part in a plasma processing apparatus. For example... Figure 1 and Figure 2As shown, the heating device includes a heating section 20 and at least one excitation section 30. One side of the moving part faces the reaction space of the plasma processing device, and the other side is in close contact with the heating section 20, so that the moving part is thermally coupled to the heating section 20. The following description uses a moving ring 10 that moves in the vertical direction as an example of the moving part. In this specification, "radial" and "circumferential" are based on the central axis of the heating section 20; "moving direction" refers to the direction of movement of the moving ring 10 relative to the chamber sidewall 40.

[0045] like Figure 1 As shown, the heating element 20 is a ring-shaped magnetically conductive component made of a magnetically conductive material, located radially outside the moving ring 10 and surrounding it. The heating element 20 and the moving ring 10 remain relatively fixed and in close contact, achieving thermal coupling between them. The heating element 20 extends circumferentially along the moving ring 10 to form a ring magnetic field loop and moves together with the moving ring 10 when it rises and falls. In a specific example, the moving ring 10 is a quartz ring, and the heating element 20 is disposed close to the outer periphery of the quartz ring, so that the heat generated by the heating element 20 can be transferred to the moving ring 10.

[0046] In this specification, the heating part 20 constitutes a ring magnetic field loop, which means that the heating part 20 extends continuously along the circumference of the moving part and forms a closed magnetic conductive path; when the excitation part 30 is working, the alternating magnetic field generated by the excitation part 30 can be distributed along the closed magnetic conductive path.

[0047] like Figure 1 and Figure 2 As shown, the excitation unit 30 is mounted on the chamber side wall 40 of the plasma processing device and is fixed relative to the chamber side wall 40, not moving up or down with the moving ring 10 and the heating unit 20. The heating unit 20 is not connected to an external power source for directly supplying power to the heating unit 20 via a follow-up power supply wire; the heating energy is transferred from the excitation unit 30 to the heating unit 20 through magnetic coupling.

[0048] When the plasma processing device is operating, the moving ring 10 moves to the appropriate position according to process requirements, and the heating unit 20 moves together with the moving ring 10. When the heating unit 20 is in a position where it can magnetically couple with the alternating magnetic field generated by the excitation unit 30, alternating current is supplied to the excitation unit 30, and the excitation unit 30 generates an alternating magnetic field. This alternating magnetic field couples to the annular heating unit 20 and induces a current within the heating unit 20, causing the heating unit 20 to heat up. The heat generated by the heating unit 20 is transferred to the moving ring 10, thereby heating the moving ring 10.

[0049] Since the excitation unit 30 is fixed relative to the chamber sidewall 40, the power supply line to the excitation unit 30 does not need to move up and down with the moving ring 10; the heating unit 20, which moves with the moving ring 10, also does not need to be equipped with a follow-up power supply line connected to an external power source. As a result, the path for the radio frequency signal to be transmitted to the vacuum-sealed bellows along the follow-up power supply line in the resistance heating scheme is no longer formed, thereby reducing the risk of discharge between the heating power supply path and the upper electrode radio frequency power transmission path.

[0050] In some examples, to enable the heating part 20, which moves with the moving ring 10, to form a relative motion engagement with the fixed excitation part 30, a receiving groove 70 is provided on the side of the heating part 20 facing the excitation part 30. The receiving groove 70 opens toward the excitation part 30 and extends along the moving direction of the moving ring 10. The excitation part 30 is fixed to the side wall 40 of the chamber, and the receiving groove 70 moves together with the heating part 20 and the moving ring 10. Therefore, when the moving ring 10 rises and falls, relative movement occurs between the excitation part 30 and the receiving groove 70.

[0051] In a specific example of the vertical movement of the moving ring 10, the term "process position" as used in this specification refers to the position of the moving ring 10 during plasma treatment. In the installed state of the moving ring 10, the receiving groove 70 has an upper end and a lower end in the vertical direction, respectively. As the moving ring 10 moves to the process position, the receiving groove 70 moves along with the heating unit 20, and the excitation unit 30, fixed to the chamber sidewall 40, enters the groove from its lower opening relative to the receiving groove 70. When the moving ring 10 is in the process position, the excitation unit 30 is located at the upper end of the receiving groove 70. Here, "the excitation unit 30 is located at the upper end of the receiving groove 70" describes their relative position; the excitation unit 30 itself remains fixed to the chamber sidewall 40.

[0052] When the excitation unit 30 is located at the upper end of the receiving tank 70, the alternating magnetic field generated by the excitation unit 30 couples with the magnetic material around the receiving tank 70, so that the alternating magnetic field is mainly distributed in the heating unit 20 around the receiving tank 70.

[0053] The statement that the AC magnetic field is "confined within the heating section 20" means that the AC magnetic field is mainly distributed within the heating section 20, and does not mean that the AC magnetic field does not extend outside the heating section 20 at all. This reduces the diffusion of the AC magnetic field into the plasma reaction space inside the moving ring 10. The receiving groove 70 extends along the moving direction and also provides space for the movement of the heating section 20 relative to the fixed excitation section 30.

[0054] In another example, the heating section 20 does not have a receiving groove 70, and the excitation section 30 is disposed outside the annular heating section 20. The alternating magnetic field generated by the excitation section 30 is coupled to the heating section 20, causing the heating section 20 to generate heat induction. Compared to the example without the receiving groove 70, the receiving groove 70 provides space for the movement of the heating section 20 relative to the fixed excitation section 30, and confines the alternating magnetic field generated by the excitation section 30 more within the heating section 20.

[0055] To reduce the diffusion of the alternating magnetic field generated by the excitation section 30 to areas outside the heating section 20, in some examples, the radial thickness of the heating section 20 is greater than the radial thickness of the excitation section 30. The excitation section 30 is located radially outside the heating section 20 and corresponds to the thicker material area in the heating section 20, so that the alternating magnetic field generated by the excitation section 30 is mainly distributed within the heating section 20.

[0056] In some examples, the excitation unit 30 and the heating unit 20 are arranged facing each other, with a distance of 1 mm to 5 mm between their facing surfaces. Within this range, when the distance between the excitation unit 30 and the heating unit 20 is small, the exposure of the AC magnetic field generated by the excitation unit 30 can be reduced, allowing more AC magnetic field to couple with the heating unit 20.

[0057] When the moving component is the moving ring 10, the excitation unit 30 can also be located on the side wall 40 of the chamber, corresponding to the high position during the lifting and lowering stroke of the moving ring 10. When the moving ring 10 is at this high position, the excitation unit 30 corresponds to the thicker material area in the heating unit 20 provided with the moving ring 10, so that the alternating magnetic field generated by the excitation unit 30 is mainly coupled with the heating unit 20, reducing the interference of the alternating magnetic field on the plasma reaction space inside the moving ring 10.

[0058] In an example used to improve the circumferential heating uniformity of the moving ring 10, the alternating magnetic field generated by the excitation unit 30 is distributed circumferentially relative to the annular heating unit 20, forming a circumferentially closed magnetic circuit within the heating unit 20. This "annular magnetic field loop" refers to the closed magnetic circuit formed circumferentially along the heating unit 20. Changes in the alternating magnetic field along this closed magnetic circuit cause circumferential induction heating in the heating unit 20, which helps improve the circumferential heating uniformity of the moving ring 10.

[0059] In the example where the aforementioned receiving groove 70 is provided simultaneously, when the excitation part 30 is located at the upper end of the receiving groove 70, the alternating magnetic field generated by the excitation part 30 is magnetically coupled with the heating part 20 around the receiving groove 70 and distributed circumferentially relative to the heating part 20 to form the aforementioned annular magnetic field loop.

[0060] The number of excitation sections 30 can be one. In another example, the number of excitation sections 30 is multiple, such as two or three, and the multiple excitation sections 30 are arranged circumferentially on the side wall 40. Each excitation section 30 is magnetically coupled to the same annular heating section 20 at different circumferential positions to improve the uniformity of heating of the moving ring 10 circumferentially.

[0061] When multiple excitation units 30 are used in conjunction with receiving slots 70, the heating unit 20 is provided with multiple receiving slots 70 spaced apart circumferentially, each receiving slot 70 corresponding to one excitation unit 30. For example, the heating unit 20 may be provided with two or three receiving slots 70. When the moving ring 10 moves to the corresponding position, the alternating magnetic field generated by each excitation unit 30 couples with the magnetically conductive material around the corresponding receiving slot 70, thereby energizing the heating unit 20 from multiple circumferential positions.

[0062] like Figure 2 As shown, in some examples, the heating device also includes a power supply module 50. The power supply module 50 is disposed on the atmospheric side outside the chamber sidewall 40 and connected to the excitation unit 30 disposed on the chamber sidewall 40 via wires to output alternating current to the excitation unit 30. Since the power supply module 50 and the excitation unit 30 are fixed relative to the chamber sidewall 40, the power supply lines connecting the power supply module 50 and the excitation unit 30 do not need to move with the moving ring 10.

[0063] The power module 50 may include an AC power supply 51 and an RF filter 52. The AC power output from the AC power supply 51 is delivered to the excitation unit 30 via the RF filter 52 and wires. In a specific example, the frequency of the AC power is 50Hz to 100kHz, for example, 50Hz.

[0064] The radio frequency filter 52 can be a low-pass filter and is disposed between the AC power supply 51 and the excitation unit 30. The radio frequency filter 52 is used to suppress radio frequency signals from entering the AC power supply 51 along the power supply line of the excitation unit 30, thereby reducing the risk of leakage current.

[0065] In some examples, the heating device also includes an insulating device 60 that penetrates the chamber sidewall 40. A wire from the power module 50 passes through the insulating device 60 and connects to the excitation unit 30, thus electrically isolating both the wire and the excitation unit 30 from the chamber sidewall 40. The insulating device 60 may employ an electrically isolated feedthrough structure; this electrically isolated feedthrough structure may be a ceramic feedthrough structure or a resin feedthrough structure.

[0066] In this example, the excitation unit 30 is located on the vacuum side of the chamber sidewall 40, and the power supply module 50 is located on the atmospheric side outside the chamber sidewall 40. The heating unit 20 is not connected to an external power supply for direct power supply via a follower power supply wire; heating energy is transferred from the excitation unit 30 to the heating unit 20 through magnetic coupling. The heating unit 20 does not require a follower power supply line. The insulation device 60 is used to form structural electrical isolation, and the radio frequency filter 52 is used to suppress radio frequency signals; these three components act on different aspects of the process.

[0067] In some examples, the excitation section 30 is an excitation coil 31, which surrounds an iron core 32, meaning the iron core 32 is located within the area enclosed by the excitation coil 31. The iron core 32 surrounded by the excitation coil 31 and the heating section 20 surrounding the moving part are two different components. When alternating current flows through the excitation coil 31, the excitation coil 31 generates an alternating magnetic field for magnetic coupling with the heating section 20.

[0068] The heating element 20 can be made of at least one magnetic material selected from pure iron, ferritic stainless steel or cobalt-iron soft magnetic alloys, and it generates heat under the influence of the alternating magnetic field generated by the excitation element 30.

[0069] In a specific temperature example, during plasma processing, the excitation unit 30 is magnetically coupled to the heating unit 20, causing the heating unit 20 to heat up and raise the moving part to above 80°C. In a further specific temperature example, the heating unit 20 heats the moving part to above 100°C. When the moving part is a moving ring 10 and the heating device is applied to the aforementioned fluorocarbon etching process, the formation of polymers from small fluorocarbon molecules on the inner surface of the moving ring 10 can be suppressed, reducing wafer particle contamination caused by polymer cracking and shedding.

[0070] Besides the moving ring 10, the moving component can also be a shielding ring, a liner, or other annular component exposed to the reaction space within the reaction chamber. As long as one side of the moving component faces the reaction space where contaminants easily accumulate, and a heating element is provided on the other side, the purpose of this invention can be achieved. When the moving component is a moving ring 10, a liner, or a shielding ring, the heating element 20 is a ring made of magnetically conductive material. The heating element 20 is disposed outside the corresponding moving component and surrounds it, moving with the moving component; the excitation element 30 is fixedly disposed on the chamber sidewall 40. The alternating magnetic field generated by the excitation element 30 is magnetically coupled to the heating element 20, causing the heating element 20 to generate inductive heat and heat the corresponding moving component.

[0071] In corrosive process environments, the outer surfaces of both the heating unit 20 and the excitation unit 30 can be completely covered by a corrosion-resistant material layer. This corrosion-resistant material layer can be silicon dioxide, aluminum oxide, or other materials capable of withstanding corrosion from the gases within the reaction chamber. Since the excitation unit 30 can be temperature-controlled to below 120 degrees Celsius, polymers such as Teflon can be used as the corrosion-resistant material layer. Because the heating unit 20 and the excitation unit 30 transfer energy via magnetic coupling, direct electrical contact is unnecessary. Therefore, the corrosion-resistant material layer can completely cover the outer surfaces of the corresponding components, reducing the corrosion caused by corrosive gases and promoting long-term stable operation of the heating device.

[0072] The structure and working principle of the heating device have been described above. Based on this, this specification also provides a method for heating moving parts in a plasma processing device. This heating method can be implemented using the aforementioned heating device.

[0073] When implementing this heating method, at least one excitation section is provided on the side wall of the plasma processing device chamber, and a heating section is provided on the outside of the moving part, with the excitation section and the heating section electrically isolated. The above structural and electrical isolation relationships are pre-existing conditions when implementing this method and do not constitute steps for separately setting up an excitation section, setting up a heating section, or establishing an electrical isolation relationship. The foregoing descriptions of the chamber side wall, moving part, heating section, excitation section, and process location all apply to this method.

[0074] In one example, such as Figure 3 As shown, the heating method includes the following steps: S101, during the operation of the plasma processing device, at least one excitation part provided on the side wall of the chamber generates an alternating magnetic field.

[0075] S102, the heating part provided on the outside of the moving part moves with the moving part, and the heating part is magnetically coupled with the excitation part, so that the heating part is induced to generate heat under the action of the alternating magnetic field generated by the excitation part, and the generated heat is transferred to the moving part.

[0076] Steps S101 and S102 are performed in conjunction with the magnetic coupling relationship described above. During the process of magnetic coupling and induced heating between the heating unit and the excitation unit, the excitation unit generates an alternating magnetic field. Therefore, the step numbers described above are used to distinguish different steps and do not indicate that step S102 must be executed only after all steps S101 has been completed.

[0077] In step S101, the excitation unit remains fixed relative to the chamber sidewall. For details on how the excitation unit generates the alternating magnetic field, please refer to the preceding description of the excitation coil and power supply module. For example, if the excitation unit is an excitation coil, alternating current can be input to the excitation coil to generate an alternating magnetic field that varies with the alternating current.

[0078] In step S102, the heating element and the moving component maintain a follow-up relationship. When the moving component moves relative to the chamber sidewall, the heating element moves with the moving component relative to the fixed excitation element. When the heating element is within the range of the alternating magnetic field generated by the excitation element, the alternating magnetic field generated by the excitation element couples to the heating element and induces a current in the heating element, causing the heating element to generate heat. The heat generated by the heating element is transferred to the moving component, thereby heating the moving component.

[0079] The excitation unit and the heating unit are electrically isolated from each other, and there is no conductive connection between them for directly transmitting the power supply current to the heating unit. While maintaining electrical isolation, the excitation unit and the heating unit are magnetically coupled through an alternating magnetic field, thereby transferring energy to the heating unit using the alternating magnetic field as the energy transfer medium.

[0080] Here, the phrase "the heating element moves with the moving component" is used to illustrate the follow-up relationship between the heating element and the moving component, and does not require the moving component to move continuously throughout the entire heating process. When the moving component moves to the process position and remains at that position, the heating element correspondingly remains at a position where it can magnetically couple with the excitation unit. The excitation unit can continue to generate an alternating magnetic field, causing the heating element to continuously generate induced heat during plasma processing.

[0081] In an example where steps S101 and S102 are performed in conjunction, the alternating magnetic field generated by the excitation unit is coupled to the heating unit surrounding the moving part, and is distributed circumferentially relative to the heating unit, forming a closed magnetic circuit circumferentially within the heating unit, i.e., forming a ring magnetic field loop. The alternating magnetic field changes periodically along this closed magnetic circuit, causing the heating unit to generate an induced current and heat up circumferentially. The heating unit transfers the generated heat to the moving part to heat it circumferentially.

[0082] In another example corresponding to step S102, a receiving groove is provided on the side of the heating part facing the excitation part, and the receiving groove extends along the moving direction of the moving member. When the heating part moves to the process position with the moving member, the receiving groove moves with the heating part relative to the fixedly set excitation part.

[0083] When the heating element moves to the process position along with the moving component, the excitation element is located within the receiving tank, specifically in the upper region of the receiving tank along the moving direction. At this time, the excitation element is magnetically coupled to the heating element surrounding the receiving tank, and the alternating magnetic field generated by the excitation element is mainly distributed within the heating element surrounding the receiving tank, thus being confined within the heating element. Here, "confined within the heating element" has the same meaning as in the aforementioned device example, and does not mean that the alternating magnetic field does not extend outside the heating element at all. Therefore, the heating element can induce heat at the process position while reducing the diffusion of the alternating magnetic field into the plasma reaction space inside the moving component.

[0084] The heating device for the moving parts in the plasma processing apparatus provided in this specification can achieve the following technical effects: By positioning one side of the moving component towards the reaction space and the other side in close contact with the heating element, which is made of magnetically conductive material and forms a ring-shaped magnetic field loop, the moving component and the heating element are thermally coupled, and the heating element moves with the moving component. Simultaneously, the excitation unit is positioned on the side wall of the chamber, allowing the alternating magnetic field generated by the excitation unit to magnetically couple with the heating element, thereby inducing a current within the heating element. Thus, the heating element can generate heat and transfer it to the moving component through thermal coupling, heating the moving component. Since the heating energy is transferred to the heating element moving with the moving component via the alternating magnetic field, the heating element does not need to be connected to an external power source via a follow-up power supply line, and the power supply line to the excitation unit does not need to move with the moving component. This reduces the path of the radio frequency signal along the follow-up power supply line to the vicinity of the vacuum-sealed bellows, reducing the risk of discharge between the heating power supply path and the upper electrode radio frequency power transmission path while adapting to the movement of the moving component and heating it.

[0085] Furthermore, when the alternating magnetic field generated by the excitation section is distributed circumferentially relative to the annular heating section and forms a closed magnetic circuit within the heating section, the alternating magnetic field can change along the closed magnetic circuit, causing the heating section to generate heat in the circumferential direction, thereby improving the uniformity of heating of the heating section and the moving parts in the circumferential direction.

[0086] Furthermore, when a receiving groove extending along the moving direction of the moving member is provided on the side of the heating section facing the excitation section, the receiving groove can provide space for the heating section, which moves with the moving member, to move relative to the fixed excitation section. When the moving member moves to the process position and the excitation section is located at the upper end of the receiving groove, the alternating magnetic field generated by the excitation section can couple with the magnetic material around the receiving groove and be constrained in the heating section. This reduces the diffusion of the alternating magnetic field into the plasma reaction space inside the moving member without hindering the movement of the moving member, thereby reducing the interference of the alternating magnetic field on the plasma processing process.

[0087] Furthermore, when the radial thickness of the heating section is greater than the radial thickness of the excitation section, the heating section region corresponding to the excitation section can be provided with a thicker magnetic conductive material, so that the alternating magnetic field generated by the excitation section is mainly distributed within the heating section, thereby reducing the diffusion of the alternating magnetic field to areas outside the heating section and reducing the interference of the alternating magnetic field on the plasma reaction space.

[0088] Furthermore, when at least two excitation units are arranged circumferentially on the side wall of the chamber along the heating unit, each excitation unit can be magnetically coupled to the same annular heating unit at different circumferential positions, thereby exciting the heating unit from multiple circumferential positions, thereby reducing the heating difference between different circumferential positions of the heating unit and improving the uniformity of heating of the moving part along the circumferential direction.

[0089] Furthermore, by limiting the distance between the opposing surfaces of the excitation section and the heating section to 1 mm to 5 mm, the excitation section and the heating section can maintain a small magnetic coupling distance, reduce the diffusion of the alternating magnetic field generated by the excitation section outward between them, and allow more alternating magnetic fields to couple with the heating section, thereby improving the magnetic coupling effect between the excitation section and the heating section.

[0090] Furthermore, when the power module is placed on the atmospheric side outside the chamber sidewall and AC power is output to the excitation unit fixed on the chamber sidewall via a wire, the power module, the excitation unit, and the power supply line connecting the two do not need to move with the moving parts, thereby avoiding the formation of a power supply line extending from the atmospheric side to the follow-up heating unit, further reducing the risk of leakage or discharge in the heating power supply path under radio frequency environment.

[0091] Furthermore, by installing an insulating device that penetrates the side wall of the chamber, and by connecting the power supply module's lead wires to the excitation unit after passing through the insulating device, both the lead wires and the excitation unit can be electrically isolated from the side wall of the chamber. This structurally blocks the conductive path between the power supply line of the excitation unit and the side wall of the chamber, thereby reducing the risk of leakage or discharge during the power supply process of the excitation unit.

[0092] Furthermore, when an electrical isolation feedthrough structure is used as an insulation device, it is possible to keep the wires and excitation unit electrically isolated from the chamber sidewall while the wires pass through the chamber sidewall and connect the power module on the atmospheric side to the excitation unit on the vacuum side. This provides a specific structural implementation method for the through-wall power supply and electrical isolation of the excitation unit.

[0093] Furthermore, when the power module includes an AC power supply and an RF filter disposed between the AC power supply and the excitation unit, the AC power supply can provide the excitation unit with AC current for generating an AC magnetic field, and the RF filter can suppress the RF signal from entering the AC power supply along the power supply line of the excitation unit, thereby reducing the risk of leakage caused by the RF signal entering the power module.

[0094] Furthermore, when the excitation unit is configured as an excitation coil surrounding an iron core, the excitation coil can generate an alternating magnetic field under the action of alternating current. The iron core located in the area surrounded by the excitation coil can provide a magnetic path for the alternating magnetic field, so that the excitation unit generates and guides the alternating magnetic field for magnetic coupling with the heating unit, thus forming a specific implementation of the excitation unit.

[0095] Furthermore, when the heating part is made of at least one of the following magnetically conductive materials: pure iron, ferritic stainless steel, or cobalt-iron soft magnetic alloys, the heating part can be magnetically coupled with the alternating magnetic field generated by the excitation part, and can generate heat under the action of the alternating magnetic field, thereby converting the energy transferred through magnetic coupling into heat for heating the moving parts.

[0096] Furthermore, when the moving part is set as a moving ring, a shielding ring, or an inner liner, the magnetic coupling heating method between the follow-up heating part and the fixed excitation part can be applied to the above-mentioned different types of moving parts, so that the corresponding moving parts can be heated without setting up a follow-up power supply line for the corresponding moving parts.

[0097] Furthermore, when the excitation unit is positioned on the side wall of the chamber at a position corresponding to the high position during the lifting and lowering stroke of the moving ring, when the moving ring moves to that high position, the heating unit that moves with the moving ring can reach the position corresponding to the excitation unit and magnetically couple with the excitation unit, thereby heating the moving ring when it is at that high position.

[0098] Furthermore, heating the moving part to above 80°C or above 100°C can increase the surface temperature of the moving part; when the moving part is a moving ring used in fluorocarbon etching processes, it can suppress the formation of polymers on the inner surface of the moving ring by small fluorocarbon molecules, thereby reducing wafer particle contamination caused by polymer cracking and shedding.

[0099] The heating method for moving parts in the plasma processing apparatus provided in this specification can achieve the following technical effects: By generating an alternating magnetic field through an excitation unit fixed to the side wall of the chamber, and moving a heating unit located outside the moving component to a position where it can magnetically couple with the excitation unit, the electrically isolated excitation and heating units use the alternating magnetic field as an energy transfer medium. The heating unit generates heat under the influence of the alternating magnetic field and transfers the generated heat to the moving component. Therefore, the heating unit does not need to be directly powered from an external power source via a conductive connection, and the power supply line to the excitation unit does not need to move with the moving component. This reduces the number of power supply lines to the moving heating unit while adapting to the movement of the moving component and heating it, thus lowering the risk of discharge between the heating power supply path and the upper electrode RF power transmission path.

[0100] Furthermore, when the alternating magnetic field generated by the excitation section is distributed circumferentially relative to the heating section and forms a closed magnetic circuit within the heating section, the alternating magnetic field can undergo periodic changes along the closed magnetic circuit, causing the heating section to generate heat circumferentially and transfer the heat to the moving part, thereby improving the uniformity of heating of the moving part circumferentially.

[0101] Furthermore, a receiving groove extending along the moving direction of the moving component is provided on the side of the heating part facing the excitation part. When the heating part moves to the process position with the moving component and the excitation part is located in the receiving groove, the receiving groove can provide space for the movement of the heating part relative to the fixed excitation part. The alternating magnetic field generated by the excitation part can be magnetically coupled with the heating part around the receiving groove and confined in the heating part, thereby causing the heating part to generate heat in the process position, while reducing the diffusion of the alternating magnetic field into the plasma reaction space inside the moving component.

[0102] The examples in this specification have been described above with reference to the accompanying drawings. These examples are illustrative and not intended to limit the scope of this specification. Those skilled in the art can make appropriate modifications or changes to the examples without departing from the scope of this specification. The scope of protection of this specification is defined by the claims.

Claims

1. A heating device for a moving part in a plasma processing apparatus, characterized in that, include: Heating section and at least one excitation section; The heating element is made of a magnetically conductive material and forms a ring magnetic field circuit; One side of the moving component faces the reaction space of the plasma processing device, and the other side is in close contact with the heating part, so that the moving component and the heating part are thermally coupled; The excitation unit is disposed on the side wall of the chamber of the plasma processing device; During the operation of the plasma processing device, the heating part moves with the moving component and is magnetically coupled with the excitation part to induce heat under the action of the alternating magnetic field generated by the excitation part, thereby heating the moving component.

2. The heating device according to claim 1, characterized in that, The magnetic field generated by the excitation unit is distributed circumferentially relative to the heating unit to form a ring magnetic field loop within the heating unit.

3. The heating device according to claim 1 or 2, characterized in that, The heating part has a receiving groove on the side facing the excitation part, and the receiving groove extends along the moving direction of the moving part; When the moving part is in the process position, the excitation part is located at the upper end of the receiving groove, so that the magnetic field generated by the excitation part is confined in the heating part.

4. The heating device according to claim 1, characterized in that, The radial thickness of the heating section is greater than the radial thickness of the excitation section.

5. The heating device according to claim 1, characterized in that, In the case of having at least two excitation units, each of the excitation units is arranged circumferentially at intervals on the side wall of the chamber.

6. The heating device according to claim 1, characterized in that, The distance between the excitation part and the heating part is 1mm to 5mm.

7. The heating device according to claim 1, characterized in that, It also includes a power module; The power module is located on the atmospheric side outside the chamber sidewall of the plasma processing device, and is connected to the excitation unit via a wire to output AC power to the excitation unit. The power module includes a radio frequency filter and an AC power supply.

8. The heating device according to claim 7, characterized in that, It also includes insulation devices; The insulating device penetrates the sidewall of the chamber; After passing through the insulation device, the wire is connected to the excitation unit; This ensures that the excitation unit is electrically isolated from the chamber sidewall by the insulation device.

9. The heating device according to claim 1, characterized in that, The heating element is made of at least one magnetic material selected from pure iron, ferritic stainless steel, or cobalt-iron soft magnetic alloys.

10. The heating device according to claim 1, characterized in that, The moving part is a moving ring, a shielding ring, or an inner liner.

11. The heating device according to claim 10, characterized in that, When the moving component is a moving ring, the excitation unit is disposed on the side wall of the chamber corresponding to the high position of the moving ring.

12. The heating device according to claim 1, characterized in that, The temperature of the heated moving part is greater than 80°C or greater than 100°C.

13. A method for heating a moving part in a plasma processing apparatus, characterized in that, At least one excitation section is provided on the side wall of the chamber of the plasma processing device, and a heating section is provided on the outside of the moving part of the plasma processing device; the excitation section and the heating section are electrically isolated; the method includes: During the operation of the plasma processing device, the excitation unit generates an alternating magnetic field; The heating element moves with the moving component and is magnetically coupled to the excitation element, so as to generate heat under the action of the alternating magnetic field generated by the excitation element, thereby heating the moving component.

14. The heating method according to claim 13, characterized in that, The excitation unit generates a magnetic field, including: The magnetic field generated by the excitation unit is distributed circumferentially relative to the heating unit to form a ring magnetic field loop within the heating unit.

15. The heating method according to claim 13, characterized in that, The heating part has a receiving groove on the side facing the excitation part, and the receiving groove extends along the moving direction of the moving part; The heating element moves with the moving component and is magnetically coupled to the excitation element, including: When the heating part moves to the process position along with the moving component, the excitation part is located in the receiving groove and is magnetically coupled to the heating part, so that the magnetic field generated by the excitation part is confined in the heating part.

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