A hafnium-based ferroelectric resistive random access memory with ferroelectricity and memristance and a preparation method thereof

Abstract

The application provides a hafnium-based ferroelectric resistive memory with ferroelectricity and memristance and a preparation method thereof. The method comprises the following steps: preparing a rare earth doped hafnium oxide target; taking a silicon substrate as a bottom electrode, applying the rare earth doped hafnium oxide target, and preparing a rare earth doped hafnium oxide film on the silicon substrate by adopting a pulsed laser deposition method; wherein the pulse frequency is 2-10 Hz, and the laser energy is 120-160 mJ; and a top electrode is deposited on the rare earth doped hafnium oxide film by adopting a magnetron sputtering deposition method, so as to obtain the hafnium-based ferroelectric resistive memory. The hafnium-based ferroelectric resistive memory directly grown on the silicon substrate is prepared, the ferroelectricity and the memristance are realized at the same time, the prepared component has a simple structure, and the process cost is low.

Description

Technical Field

[0001] This invention belongs to the field of microelectronics and semiconductor device technology, and relates to a memristor, and more particularly to a ferroelectric hafnium-based resistive random access memory that combines ferroelectricity and memristivity, and its fabrication method. Background Technology

[0002] In today's digital age, the rapid growth of big data and the booming development of emerging information technologies such as artificial intelligence have placed extremely stringent demands on information storage and processing technologies. Computer systems based on the traditional von Neumann architecture are facing key challenges such as slow data transmission and high power consumption caused by the physical separation of memory and processor. Memristors can integrate storage and computing functions, constructing artificial synaptic devices to realize in-memory computing neural network systems, thus solving this key problem. Currently, conductive filament memristors are widely accepted; however, the instability of filament formation and breakage severely restricts the stability and reliability of the devices, further hindering their commercial development.

[0003] Ferroelectric memristors utilize the polarization reversal of ferroelectric materials to achieve the transition between high-resistivity and low-resistivity states, effectively solving the problem of poor stability and reliability inherent in conductive filament-type memristors. Current research on ferroelectric memristors is largely based on perovskite materials. Although these materials exhibit excellent ferroelectric properties, they are severely incompatible with current mainstream complementary metal-oxide-semiconductor (CMOS) processes. For example, they require high-temperature fabrication, are prone to reacting with silicon substrates, and necessitate the use of complex and expensive buffer layers. This makes it difficult to achieve large-scale, low-cost integration of perovskite-based ferroelectric memristors, hindering their transition from laboratory to industrial applications.

[0004] To overcome CMOS process compatibility issues, researchers have begun to focus on hafnium-based ferroelectric materials. Hafnium-based materials (such as doped HfO2) are known to not only have good compatibility with existing CMOS processes but also maintain stable ferroelectricity at the nanoscale, demonstrating enormous application potential. However, in current technologies, hafnium-based memristors directly constructed on silicon substrates often fail to stably exhibit ferroelectricity, while hafnium-based capacitor structures that do exhibit ferroelectricity typically lack readable / writable, non-volatile memristor switching characteristics. In other words, current hafnium-based resistive random access memories (RRAMs) or ferroelectric memories cannot simultaneously achieve excellent ferroelectricity and memristor properties in the same device. The fundamental reason is that the ferroelectric phase window of hafnium-based materials is extremely demanding. Within this demanding window, simultaneously obtaining stable, repeatable, and high on / off ratio memristor performance places extremely high demands on the interfacial defect state density, electrode work function matching, and the coordinated control of polarization reversal and carrier transport, making it difficult to achieve both simultaneously.

[0005] Therefore, how to provide a hafnium-based memristor that can be directly grown on a silicon substrate and has both excellent ferroelectricity and stable memristivity, as well as its fabrication method, to solve the problem that ferroelectricity and memristivity cannot be achieved simultaneously in the prior art, has become an urgent technical problem to be solved in this field. Summary of the Invention

[0006] This invention addresses the problems existing in the prior art by providing a ferroelectric hafnium-based resistive switching memory that combines ferroelectricity and memristor properties, as well as its fabrication method.

[0007] The present invention adopts the following technical solution:

[0008] (I) This invention provides a method for fabricating a ferroelectric hafnium-based resistive switching memory that combines ferroelectricity and memristor properties, comprising the following steps: S1. Preparation of rare earth-doped hafnium oxide target material; S2. Using a silicon substrate as the bottom electrode, a rare earth-doped hafnium oxide thin film is prepared on the silicon substrate using the rare earth-doped hafnium oxide target material prepared in step S1 and a pulsed laser deposition method; wherein the pulse frequency is 2~10 Hz, the laser energy is 120~160 mJ, and the temperature is 700~900 ℃. S3. Using a magnetron sputtering deposition method, a top electrode is applied to the rare earth-doped hafnium oxide thin film obtained in step S2 to obtain a ferroelectric hafnium-based resistive switching memory.

[0009] Furthermore, in step S1, the rare earth element in the rare earth-doped hafnium oxide target is one or more of samarium, lanthanum, neodymium, yttrium, and tantalum, and the weight percentage of the rare earth element in the rare earth-doped hafnium oxide target is 1-15%.

[0010] Furthermore, in step S1, the method for preparing the rare earth-doped hafnium oxide target is as follows: S11. Mix rare earth powder and hafnium oxide powder and grind for 30-60 min to obtain mixed powder; S12. The mixed powder obtained in step S11 is heated to carry out a solid-state reaction to obtain rare earth-doped hafnium oxide powder. The solid-state reaction heating process is as follows: first, the temperature is raised to 400~600 ℃ and held for 15~25 min, then the temperature is raised to 900~1100 ℃ and held for 15~25 min, then the temperature is raised to 1200~1400 ℃ and held for 1050~1100 min, and then the temperature is lowered to room temperature. S13. Add polyvinyl alcohol to the powder obtained in step S12 and grind it for 30-60 min. S14. Press the powder ground in step S13 into a target material. S15. The target material pressed in step S14 is heated to undergo a sintering reaction to obtain the rare earth-doped hafnium oxide target material. The sintering reaction heating process is as follows: first, the temperature is raised to 400~600 ℃ and held for 100~150 min, then the temperature is raised to 900~1100 ℃ and held for 25~35 min, then the temperature is raised to 1100~1300 ℃ and held for 700~750 min, then the temperature is lowered to 900~1100 ℃ and held for 25~35 min, then the temperature is lowered to 400~600 ℃ and held for 25~35 min, and finally the temperature is lowered to room temperature.

[0011] Furthermore, in step S12, the solid-state reaction heating process is as follows: the temperature is raised from 25 ℃ to 500 ℃ after 60 min, held at 500 ℃ for 20 min, then raised to 1000 ℃ after 100 min, held at 1000 ℃ for 20 min, then raised to 1300 ℃ after 100 min, held at 1300 ℃ for 1080 min, and finally cooled to 25 ℃ after 150 min.

[0012] Furthermore, in step S15, the sintering reaction heating process is as follows: the temperature is raised from 25 °C to 500 °C after 95 min, held at 500 °C for 120 min, then raised to 1000 °C after 100 min, held at 1000 °C for 30 min, raised to 1200 °C after 40 min, held at 1200 °C for 720 min, then cooled to 1000 °C after 40 min, held at 1000 °C for 30 min, then cooled to 500 °C after 100 min, held at 500 °C for 30 min, and finally cooled to 25 °C after 95 min.

[0013] Further, step S2 specifically involves: installing the rare-earth-doped hafnium oxide target and silicon substrate in the pulsed laser deposition chamber; and evacuating the pulsed laser deposition chamber to 10 °C. -5 Below Pa, the temperature is raised to 700~900 ℃, and oxygen is introduced into the pulsed laser deposition chamber to 10~30 Pa; then pulsed laser deposition is performed with 800~2500 pulses; after pulsed laser deposition, the temperature is lowered to obtain rare earth-doped hafnium oxide thin film.

[0014] Furthermore, in step S2, the silicon substrate is cleaned before pulsed laser deposition. The cleaning method is as follows: the silicon substrate is ultrasonically cleaned in deionized water for 4-8 minutes, then ultrasonically cleaned in acetone for 4-8 minutes, then ultrasonically cleaned in anhydrous ethanol for 4-8 minutes, and finally rinsed with deionized water multiple times and dried with a nitrogen gun.

[0015] Further, step S3 specifically involves: installing the top electrode target material to be deposited and the rare-earth-doped hafnium oxide ferroelectric thin film in the magnetron sputtering chamber; and evacuating the magnetron sputtering chamber to 10... -3 Below Pa, argon gas is introduced to 10~60 Pa; then magnetron sputtering is performed at a power of 30~80 W, and the thickness of the top electrode is 50~500 nm.

[0016] Furthermore, in step S3, the top electrode is Pt, Ti, or TiN.

[0017] (ii) The present invention also provides a ferroelectric hafnium-based resistive switching memory with both ferroelectric and memristor properties prepared by the above-described preparation method.

[0018] The beneficial effects of this invention are: Compared with existing technologies, this invention utilizes pulsed laser deposition and magnetron sputtering to fabricate a ferroelectric hafnium-based resistive random access memory (RRAM) that is directly grown on a silicon substrate and possesses both ferroelectric and memristor properties. It features a simple structure, low processing cost, and solves the problem of poor device stability and reliability caused by the random formation and breakage of conductive filaments in current conductive filament-type memristors. It has scientific research value and is conducive to the commercialization and application of memristors.

[0019] This invention breaks through the dependence on interface oxide layers or buffer layers. By using rare-earth element doping of hafnium oxide for lattice control and process synergy, functional layers can be grown directly on silicon substrates, simplifying the complexity of traditional structures and making them more compatible with silicon-based CMOS processes. It also achieves both ferroelectric and memristor properties. Specifically, hafnium oxide (HfO2), as a high-dielectric-constant material, possesses excellent chemical and thermal stability, making it compatible with CMOS processes. Doping with rare-earth elements effectively controls the lattice constant of hafnium oxide to be closer to that of the silicon substrate, significantly reducing lattice mismatch. Furthermore, the appropriate doping concentration of rare-earth elements stabilizes the ferroelectric orthorhombic phase while avoiding lattice distortion caused by overdoping. This allows atoms to more easily and orderly epitaxially grow on the silicon substrate during subsequent pulsed laser deposition, reducing defects. The high-energy laser pulses of pulsed laser deposition technology can drive precise atomic alignment, leveraging the advantages of rare-earth control to achieve high-quality epitaxial growth on silicon substrates. The high-vacuum growth environment prevents contamination, ensuring the stability of the doped rare-earth elements and synergistically achieving buffer-free growth. Furthermore, compared to traditional conductive filament devices, memristors based on ferroelectric polarization reversal have lower requirements for interface conductivity, thus achieving excellent device performance without the need for an additional buffer layer. Attached Figure Description

[0020] Figure 1 This is a process flow diagram of the fabrication process of the ferroelectric hafnium-based resistive switching memory that combines ferroelectricity and memristor properties of the present invention. Figure 2This is a flowchart of the process of sintering rare earth-doped hafnium oxide target material in Example 1; Figure 3 This is a schematic diagram of the structure of the ferroelectric hafnium-based resistive switching memory prepared in Example 1; Figure 4 The figure shows the ferroelectric polarization value-electric field curve of the ferroelectric hafnium-based resistive switching memory with the structure Pt / Sm:HfO2 / Si prepared in Example 1. In the figure, a is the XRD pattern and b is the ferroelectric polarization value-electric field curve. Figure 5 This is a current-voltage characteristic curve of the ferroelectric hafnium-based resistive switching memory with the structure Pt / Sm:HfO2 / Si prepared in Example 1; Figure 6 The figure shows the ferroelectric polarization value-electric field curve of the ferroelectric hafnium-based resistive switching memory with the structure Ti / Sm:HfO2 / Si prepared in Example 2. In the figure, a is the XRD pattern and b is the ferroelectric polarization value-electric field curve. Figure 7 This is a current-voltage characteristic curve of the ferroelectric hafnium-based resistive switching memory with the structure Ti / Sm:HfO2 / Si prepared in Example 2; Figure 8 The figure shows the ferroelectric polarization value-electric field curve of the ferroelectric hafnium-based resistive switching memory with the structure Pt / Sm:HfO2 / Si prepared in Comparative Example 1. In the figure, a is the XRD pattern and b is the ferroelectric polarization value-electric field curve. Figure 9 The current-voltage characteristic curves of the ferroelectric hafnium-based resistive switching memory with the structure Pt / Sm:HfO2 / Si prepared in Comparative Example 1 are shown. The labels in the attached diagram are: 1. Bottom electrode; 2. Rare earth-doped hafnium oxide thin film; 3. Top electrode. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the embodiments and accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] Example 1 This embodiment provides a ferroelectric hafnium-based resistive random access memory that combines ferroelectricity and memristor properties, such as... Figure 1 As shown, its preparation method includes the following steps: Step 1: Firing a samarium-doped hafnium oxide target with a doping molar percentage of 5 mol%. For example... Figure 2As shown, it includes the following sub-steps: (a) Weigh 0.42 g of samarium oxide and 9.58 g of hafnium oxide powder on a balance so that the molar percentage of rare earth samarium in the samarium-doped hafnium oxide target is 5%; (b) Place the samarium oxide powder and hafnium oxide powder weighed in sub-step (a) into a mortar and grind them with a pestle for 50 min, then place them into a crucible; (c) The crucible from sub-step (b) is placed in an annealing furnace for solid-state reaction. The parameters of the solid-state reaction annealing furnace are set as follows: from 25 °C to 500 °C after 60 min, hold at 500 °C for 20 min, then rise to 1000 °C after 100 min, hold at 1000 °C for 20 min, rise to 1300 °C after 100 min, hold at 1300 °C for 1080 min, and finally cool down to 25 °C after 150 min. (d) Take the product after the solid-state reaction is completed out of the annealing furnace, put it into a mortar, add polyvinyl alcohol while grinding for 50 min; (e) The powder after grinding in sub-step (d) is placed into the target mold and then placed into the forging press to press the target material; (f) The target material pressed in sub-step (e) is fed into a high-temperature annealing furnace for sintering reaction. The parameters of the sintering reaction annealing furnace are set as follows: from 25 ℃ to 500 ℃ after 95 min, hold at 500 ℃ for 120 min, then rise to 1000 ℃ after 100 min, hold at 1000 ℃ for 30 min, rise to 1200 ℃ after 40 min, hold at 1200 ℃ for 720 min, then drop to 1000 ℃ after 40 min, hold at 1000 ℃ for 30 min, then drop to 500 ℃ after 100 min, hold at 500 ℃ for 30 min, and finally drop to 25 ℃ after 95 min. (g) Take out the target material after sintering in sub-step (f) and place it in a vacuum-sealed bag.

[0023] Step 2, cleaning the silicon substrate, specifically includes the following sub-steps: (a) Place the silicon substrate in deionized water and ultrasonically clean it for 5 min; (b) Place the silicon substrate cleaned in sub-step (a) in acetone and ultrasonically clean it for 5 min; (c) Place the silicon substrate cleaned in sub-step (b) in anhydrous ethanol and ultrasonically clean it for 5 min; (d) Rinse the silicon substrate cleaned in sub-step (c) with deionized water multiple times and then dry it with a nitrogen gun.

[0024] Step 3: Using a silicon substrate as the bottom electrode, a samarium-doped hafnium oxide thin film is prepared on the silicon substrate using pulsed laser deposition. This includes the following sub-steps: (a) The samarium-doped hafnium oxide target material after step 1 is installed on the target holder, the target holder is installed in the pulsed laser deposition chamber, and the target position is adjusted to the pulsed laser deposition orientation by the target position module in the computer software; (b) The silicon substrate after cleaning in step 2 is placed into the chamber for pulsed laser deposition, and the position of the silicon substrate is adjusted to the pulsed laser deposition position using the substrate position module in the computer software. (c) Evacuate the vacuum in the pulsed laser deposition chamber after sub-step (b) to 10. -5 Below Pa; (d) Set the temperature control module in the computer software to perform the heating operation, with a target temperature of 800 ℃ and a heating rate of 60℃ / min, and click run to run; (e) Open the ventilation flow valve to introduce oxygen, so that the gas pressure in the pulsed laser deposition chamber is 10 Pa; (f) Set the laser scanning range. Open the Target scanning module in the computer software and set the laser scanning range to 3. 3 cm 2 ; (g) Set the Laser Control module of the laser controller, select Counts and Continue mode, set the frequency to 2Hz, laser energy to 125 mJ, pulse number to 840, and click start laser to start pulsed laser deposition; (h) Cool the sample after the pulsed laser deposition in sub-step (g). Set the cooling rate to 50 °C / min and the target temperature to 25 °C. Click "run" to run the cooling program. After cooling is complete, remove the sample from the pulsed laser deposition chamber.

[0025] Step 4: Deposit a Pt top electrode on the samarium-doped hafnium oxide thin film obtained in Step 3 using magnetron sputtering. This step includes the following sub-steps: (a) Installing a platinum target in a magnetron sputtering chamber; (b) The samarium-doped hafnium oxide ferroelectric thin film obtained in step 3 is placed into the magnetron sputtering chamber; (c) Evacuate the magnetron sputtering chamber to 10 -3 Below Pa; (d) Argon gas is introduced to make the pressure in the magnetron sputtering chamber 10 Pa; (e) Turn on the RF power switch AC POWER and press the RF power output button RF ON; (f) Rotate the power button clockwise to set the power to 60 W to ignite; (g) After pre-sputtering for 3 min, remove the baffle and start sputtering for 60 min, depositing a top electrode thickness of 200 nm.

[0026] The device structure prepared in Example 1 is as follows Figure 3 As shown, Figure 3 In this embodiment, 1 represents the bottom electrode, which is silicon; 2 represents the intermediate layer, which is a 5% samarium-doped hafnium oxide thin film; and 3 represents the top electrode, which is Pt.

[0027] The ferroelectric polarization-electric field curve of the Pt / Sm:HfO2 / Si resistive switching memory prepared in this embodiment at a hafnium oxide deposition temperature of 800 °C is shown below. Figure 4 As shown, the current-voltage characteristic curve is as follows: Figure 5 As shown.

[0028] Example 2 This embodiment provides a ferroelectric hafnium-based resistive switching memory that combines ferroelectricity and memristor properties. The preparation method is basically the same as that in Embodiment 1, except that: In sub-step (d) of step 3, the target temperature for heating is set to 900 ℃ and the heating rate is 60 ℃ / min; In step 4, the top electrode is Ti.

[0029] The ferroelectric polarization-electric field curves of the Ti / Sm:HfO2 / Si resistive switching memory prepared in Example 2 at a hafnium oxide deposition temperature of 900 °C are shown below. Figure 6 As shown, the current-voltage characteristic curve is as follows: Figure 7 As shown.

[0030] Comparative Example 1 The difference between Comparative Example 1 and Example 1 is as follows: In sub-step (d) of step 3, the target temperature for heating is set to 650 °C; In sub-step (g) of step 3, the frequency is set to 2 Hz and the laser energy to 145 mJ.

[0031] The ferroelectric polarization-electric field curves of the Pt / Sm:HfO2 / Si resistive switching memory prepared in Comparative Example 1 at a hafnium oxide deposition temperature of 650 °C are shown below. Figure 8 As shown, the current-voltage characteristic curve is as follows: Figure 9 As shown.

[0032] The above are merely preferred embodiments of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principle of the present invention should be considered within the scope of protection of the present invention.

Claims

1. A method for fabricating a ferroelectric hafnium-based resistive switching memory that combines ferroelectricity and memristor properties, characterized in that, Includes the following steps: S1. Preparation of rare earth-doped hafnium oxide target material; S2. Using a silicon substrate as the bottom electrode, a rare earth-doped hafnium oxide thin film is prepared on the silicon substrate using the rare earth-doped hafnium oxide target material prepared in step S1 and a pulsed laser deposition method; wherein the pulse frequency is 2~10 Hz, the laser energy is 120~160mJ, and the temperature is 700~900 ℃. S3. Using a magnetron sputtering deposition method, a top electrode is applied to the rare earth-doped hafnium oxide thin film obtained in step S2 to obtain a ferroelectric hafnium-based resistive switching memory.

2. The method for fabricating a ferroelectric hafnium-based resistive switching memory with both ferroelectric and memristor properties according to claim 1, characterized in that, In step S1, the rare earth element in the rare earth-doped hafnium oxide target is one or more of samarium, lanthanum, neodymium, yttrium, and tantalum, and the weight percentage of the rare earth element in the rare earth-doped hafnium oxide target is 1-15%.

3. The method for fabricating a ferroelectric hafnium-based resistive switching memory with both ferroelectric and memristor properties according to claim 1, characterized in that, In step S1, the method for preparing the rare earth-doped hafnium oxide target is as follows: S11. Mix and grind rare earth powder and hafnium oxide powder to obtain mixed powder; S12. The mixed powder obtained in step S11 is heated to carry out a solid-state reaction to obtain rare earth-doped hafnium oxide powder. The solid-state reaction heating process is as follows: first, the temperature is raised to 400~600 ℃ and held for 15~25 min, then the temperature is raised to 900~1100 ℃ and held for 15~25 min, then the temperature is raised to 1200~1400 ℃ and held for 1050~1100 min, and then the temperature is lowered to room temperature. S13. The powder obtained in step S12 is added to polyvinyl alcohol and ground simultaneously. S14. Press the powder ground in step S13 into a target material. S15. The target material pressed in step S14 is heated to undergo a sintering reaction to obtain the rare earth-doped hafnium oxide target material. The sintering reaction heating process is as follows: first, the temperature is raised to 400~600 ℃ and held for 100~150 min, then the temperature is raised to 900~1100 ℃ and held for 25~35 min, then the temperature is raised to 1100~1300 ℃ and held for 700~750 min, then the temperature is lowered to 900~1100 ℃ and held for 25~35 min, then the temperature is lowered to 400~600 ℃ and held for 25~35 min, and finally the temperature is lowered to room temperature.

4. The method for fabricating a ferroelectric hafnium-based resistive switching memory with both ferroelectric and memristor properties according to claim 3, characterized in that, In step S12, the solid-phase reaction heating process is as follows: the temperature is raised from 25 ℃ to 500 ℃ after 60 min, held at 500 ℃ for 20 min, then raised to 1000 ℃ after 100 min, held at 1000 ℃ for 20 min, then raised to 1300 ℃ after 100 min, held at 1300 ℃ for 1080 min, and finally cooled to 25 ℃ after 150 min.

5. The method for fabricating a ferroelectric hafnium-based resistive switching memory with both ferroelectric and memristor properties according to claim 1, characterized in that, In step S15, the sintering reaction heating process is as follows: the temperature is raised from 25 ℃ to 500 ℃ after 95 min, held at 500 ℃ for 120 min, then raised to 1000 ℃ after 100 min, held at 1000 ℃ for 30 min, raised to 1200 ℃ after 40 min, held at 1200 ℃ for 720 min, then cooled to 1000 ℃ after 40 min, held at 1000 ℃ for 30 min, then cooled to 500 ℃ after 100 min, held at 500 ℃ for 30 min, and finally cooled to 25 ℃ after 95 min.

6. The method for fabricating a ferroelectric hafnium-based resistive switching memory with both ferroelectric and memristor properties according to claim 1, characterized in that, Step S2 specifically involves: The rare-earth-doped hafnium oxide target and silicon substrate are installed in a pulsed laser deposition chamber; the pulsed laser deposition chamber is then evacuated to 10 °C. -5 Below Pa, the temperature is raised to 700~900 ℃, and oxygen is introduced into the pulsed laser deposition chamber to 10~30 Pa; then pulsed laser deposition is performed with 800~2500 pulses; after pulsed laser deposition, the temperature is lowered to obtain rare earth-doped hafnium oxide thin film.

7. The method for fabricating a ferroelectric hafnium-based resistive switching memory with both ferroelectric and memristor properties according to claim 1, characterized in that, In step S2, the silicon substrate is cleaned before pulsed laser deposition. The cleaning method is as follows: the silicon substrate is ultrasonically cleaned in deionized water for 4-8 minutes, then ultrasonically cleaned in acetone for 4-8 minutes, then ultrasonically cleaned in anhydrous ethanol for 4-8 minutes, and finally rinsed with deionized water multiple times and dried with a nitrogen gun.

8. The method for fabricating a ferroelectric hafnium-based resistive switching memory with both ferroelectric and memristor properties according to claim 1, characterized in that, Step S3 specifically involves: The target material for the top electrode to be deposited and the rare-earth-doped hafnium oxide ferroelectric thin film are installed in the magnetron sputtering chamber; the magnetron sputtering chamber is then evacuated to 10 °C. -3 Below Pa, argon gas is introduced to 10~60 Pa; then magnetron sputtering is performed at a power of 30~80 W, and the thickness of the top electrode is 50~500 nm.

9. The method for fabricating a ferroelectric hafnium-based resistive switching memory with both ferroelectric and memristor properties according to claim 1, characterized in that, In step S3, the top electrode is Pt, Ti, or TiN.

10. A ferroelectric hafnium-based resistive switching memory with both ferroelectric and memristor properties, prepared by the method according to any one of claims 1 to 9.

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