High-efficiency GaN-based HEMT chip and manufacturing method

Abstract

The application discloses a kind of efficient GaN base HEMT chip, including semiconductor substrate, buffer layer, channel layer, barrier layer, dielectric layer, source and drain are equipped with in dielectric layer two sides, the drain corresponding formation has drain gate, the source corresponding formation has source gate, the drain gate and source gate are all located in the active conductive channel area of chip;First metallization via hole that is opened in the drain gate has been passed through dielectric passivation layer, second metallization via hole that is opened in the source gate has been passed through dielectric passivation layer;Chip surface is provided with drain pad and source pad, the drain pad is directly electrically connected with drain gate by first metallization via hole, the source pad is directly electrically connected with source gate by second metallization via hole;On the premise of not occupying chip active conductive area completely, realize the flexible extension of source drain Pad area, while shortening current transmission path, reduce contact resistance, significantly improve the conductive efficiency, power density and working reliability of device.

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