Semiconductor power device with magnetoelectric synergistic vertical type electric field regulation and preparation method thereof

Abstract

The application discloses a magnetoelectric cooperative vertical type electric field regulated semiconductor power device and a preparation method thereof. + low-resistance substrate region, N ‑ transition region, N ‑ high-resistance region, and a Schottky junction formed by arranging a Schottky metal contact in the center of the high-resistance region, wherein a permanent magnet is arranged in the width direction of the device to form a constant magnetic field orthogonal to the main current, and a ring-shaped carrier loop is constructed by relying on the difference in doping concentration, the Schottky junction and the orthogonal magnetic field, so that the rectification and power switching dual working modes can be adaptively realized. In the power switching mode, the insulating layer and the metal control plate are symmetrically arranged on the upper and lower sides of the device to form a vertical electric field driving structure, and the conduction and turn-off of the device are regulated by the vertical electric field. The application discloses a preparation method of the device, which discards the traditional PN junction and gate channel regulation mechanism, eliminates inherent defects such as the Miller effect, minority carrier storage and reverse recovery loss, and is prepared by using a standard CMOS planar epitaxial process, and has the characteristics of high-speed switching, low conduction resistance and high turn-off resistance.

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