Power semiconductor module

Abstract

The present disclosure relates to the technical field of semiconductor switch, in particular to a power semiconductor module, comprising: a substrate; a side frame connected to one side surface of the substrate; a first power device backing plate arranged in a containing space surrounded by the side frame, and a first power device chip arranged corresponding to the first power device backing plate and electrically connected thereto; a second power device backing plate arranged in the containing space surrounded by the side frame, and a second power device chip arranged corresponding to the second power device backing plate and electrically connected thereto; each of the backing plates is arranged side by side; a plurality of AC power terminals arranged on one side of the side frame and respectively corresponding to the backing plates and extending outward from the side frame; a plurality of DC power terminals arranged on the other side of the side frame and respectively corresponding to each of the backing plates and extending outward from the side frame; and a cover plate arranged on the end surface of the side frame away from the substrate. The power semiconductor module provided by the present disclosure can improve the problem of uneven heat dissipation of each device, has high integration, can simplify the module structure, and reduce the parasitic inductance.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor switching technology, and in particular to a power semiconductor module. Background Technology

[0002] In high-power applications such as new energy vehicles, rail transit, industrial frequency converters, photovoltaic inverters, and energy storage systems, insulated-gate bipolar transistor (IGBT) power modules have become core power conversion components. However, as system requirements for power density, efficiency, and reliability continue to increase, the traditional approach of using multiple independent IGBT modules is gradually revealing numerous problems.

[0003] Currently, medium- and high-power converters typically require two independent IGBT modules: a GM power module and a TM power module. This multi-module discrete approach has the following drawbacks: 1. Large size and weight: Multiple modules need to be individually packaged, installed, and wired, occupying a lot of space; 2. High parasitic parameters: External connections between modules increase the parasitic inductance of the circuit and increase switching losses; 3. Uneven heat dissipation: Large differences in operating temperature among modules affect the overall lifespan of the system; 4. Complex installation: It requires complex mechanical structures and electrical connections, increasing the difficulty of assembly; 5. Low reliability: The connection points between multiple modules become high-risk areas for failure.

[0004] To address these issues, the industry has begun exploring solutions that integrate the functions of multiple IGBT power modules into a single package. Among these, the design that combines the functions of two IGBT modules into a single "two-in-one" module is particularly noteworthy. This integrated solution not only significantly reduces system size and weight but also optimizes current paths, reduces parasitic inductance, improves heat dissipation consistency, and enhances system reliability.

[0005] Although some integrated module products have been launched, the following technical bottlenecks still exist in high power density applications: the challenge of balancing integration and heat dissipation performance, current distribution and thermal coupling between different chips, the impact of packaging structure on reliability, and manufacturing process complexity and cost control. Summary of the Invention

[0006] This disclosure provides a power semiconductor module to improve the problem of unbalanced heat dissipation performance in conventional solutions.

[0007] In a first aspect, this disclosure provides a power semiconductor module, comprising: substrate; Side frame, connected to one side surface of the substrate; the side frame and the substrate enclose an accommodating space; A first power device substrate is disposed within the receiving space enclosed by the side frame; a first power device chip is disposed on the first power device substrate, and the first power device chip is electrically connected to the first power device substrate accordingly. A second power device substrate is disposed within the receiving space enclosed by the side frame; a second power device chip is disposed on the second power device substrate, and the second power device chip is electrically connected to the second power device substrate; the second power device substrate is disposed side by side with the first power device substrate. Multiple AC power terminals are located on one side of the side frame; one end of each AC power terminal is electrically connected to the first power device substrate and the second power device substrate respectively; the other end of each AC power terminal extends outward from the side frame. Multiple DC power terminals are located on the other side of the side frame; one end of each DC power terminal is electrically connected to the corresponding first power device substrate and second power device substrate; the other end of each DC power terminal extends outward from the side frame. A cover plate is installed on the end face of the side frame that is away from the substrate.

[0008] In some embodiments, it also includes: Multiple auxiliary terminals are respectively disposed on the first power device substrate and the second power device substrate, and are electrically connected to the first power device substrate and the second power device substrate respectively; the ends of the auxiliary terminals extend outward from the cover plate.

[0009] In some embodiments, the auxiliary terminal extends in a direction perpendicular to the substrate.

[0010] In some embodiments, it further includes: a reinforcing beam disposed between opposite sides of the side frame, dividing the accommodating space of the side frame into multiple regions, wherein a first power device liner and a second power device liner are disposed in each region.

[0011] In some embodiments, the first power device chip disposed on the first power substrate is a forward recovery diode (FRD) chip. The second power device mounted on the second power substrate is an insulated gate bipolar transistor (IGBT) chip.

[0012] In some embodiments, there is one first power liner, which is disposed at one end of the side frame; and there are three second power liners, which are arranged sequentially from the other end of the side frame.

[0013] In some embodiments, the substrate is a metal plate on which heat dissipation fins are disposed.

[0014] In some embodiments, the side frame is a rectangular frame; AC power terminals are disposed on one long side of the side frame, and DC power terminals are disposed on the other long side of the side frame.

[0015] In some embodiments, the first power device substrate includes a first negative terminal connection region and a first positive terminal connection region; the number of first positive terminal connection regions is two, respectively disposed on both sides of the first negative terminal connection region.

[0016] In some embodiments, the second power device substrate includes: a second negative terminal connection region and a second positive terminal connection region; there are two second positive terminal connection regions, which are respectively arranged on both sides of the second negative terminal connection region.

[0017] The technical solution provided in this embodiment employs a substrate; a side frame connected to one side surface of the substrate; a receiving space formed between the side frame and the substrate; a first power device substrate disposed within the receiving space formed by the side frame; a first power device chip disposed on the first power device substrate, and the first power device chip is electrically connected to the first power device substrate; a second power device substrate disposed within the receiving space formed by the side frame; a second power device chip disposed on the second power device substrate, and the second power device chip is electrically connected to the second power device substrate; the second power device substrate and the first power device substrate are arranged side by side; multiple AC power terminals are disposed on one side of the side frame; one end of each AC power terminal is electrically connected to the first power device substrate and the second power device substrate; the other end of each AC power terminal extends from the side frame towards... The module extends outwards; multiple DC power terminals are located on the other side of the side frame; one end of each DC power terminal is electrically connected to the corresponding first power device substrate and second power device substrate; the other end of each DC power terminal extends outwards from the side frame; a cover plate is installed on the end face of the side frame away from the substrate. It is installed and wired as a whole module with external equipment. The number of modules is much less than that of existing technologies, which simplifies the installation and wiring difficulty and reduces the space occupation. It also reduces the number of external wirings of the module, thereby reducing the parasitic inductance of the circuit, reducing switching losses, and reducing the problem of high fault points due to multiple connection points. Furthermore, the first power device chip and the second power device chip are uniformly heat-dissipated and cooled through the substrate, so that the operating temperature difference of each power chip is small, which is conducive to improving the service life of the overall module. Attached Figure Description

[0018] The present disclosure will be described in more detail below based on embodiments and with reference to the accompanying drawings: Figure 1 This is a schematic diagram of the structure of a power semiconductor module provided in an embodiment of the present disclosure; Figure 2 This is a schematic diagram of the structure of a substrate in a power semiconductor module provided in an embodiment of the present disclosure; Figure 3 This is a schematic diagram of the structure of a side frame in a power semiconductor module provided in an embodiment of the present disclosure; Figure 4 A left view of a side frame in a power semiconductor module provided in an embodiment of this disclosure; Figure 5 A circuit schematic diagram of a first power device chip in a power semiconductor module provided in this disclosure embodiment; Figure 6 This is a schematic diagram of the structure of a first power device substrate in a power semiconductor module provided by an embodiment of the present disclosure; Figure 7 A circuit schematic diagram of a second power device chip in a power semiconductor module provided in this disclosure embodiment; Figure 8 This is a schematic diagram of the structure of a second power device substrate in a power semiconductor module provided in an embodiment of the present disclosure.

[0019] Figure label: 1-Substrate; 11-Module mounting hole; 12-Side frame mounting hole; 13-Side frame positioning hole; 14-Boss; 2-Side frame; 21-Positioning pin; 3-First power device substrate; 31-First power device chip; 32-First negative terminal connection region; 33-First positive terminal connection region; 4-Second power device substrate; 41-Second power device chip; 42-Second negative terminal connection region; 43-Second positive terminal connection region; 5- AC power terminal; 6-DC power terminal; 7-Auxiliary terminal; 8-Strengthening beam.

[0020] In the accompanying drawings, the same parts are referred to by the same reference numerals, and the drawings are not drawn to scale. Detailed Implementation

[0021] To enable those skilled in the art to better understand the technical solutions of this disclosure, and to fully understand and implement the process of how this disclosure applies technical means to solve technical problems and achieve corresponding technical effects, the technical solutions in the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, not all embodiments. The embodiments of this disclosure and the various features within them can be combined with each other without conflict, and the resulting technical solutions are all within the protection scope of this disclosure. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort should fall within the protection scope of this disclosure.

[0022] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this disclosure are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this disclosure described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0023] It should be noted that the steps shown in the flowchart in the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and although a logical order is shown in the flowchart, in some cases the steps shown or described may be executed in a different order than that shown here.

[0024] Currently, some integration solutions that combine multiple IGBT power modules into a single module have the following problems.

[0025] 1. Multi-module discrete solutions are bulky and heavy, complex to install, require long cooling channels, and cannot meet the high power density requirements of controller systems. 2. Multiple power modules and their associated drive and sealing units, with a large number of parts and fasteners, require complex mechanical structures and electrical connections, increasing assembly difficulty, hindering lightweighting, and making cost control difficult.

[0026] 3. The separate heat dissipation design of multiple modules results in an increased overall heat dissipation area but low heat dissipation efficiency, affecting the overall lifespan of the system. To address the aforementioned issues, this application proposes a highly integrated power semiconductor module that integrates multiple power units onto a single functional module, enabling functional integration and sharing. This simplifies the structure, reduces the size, increases power density, lowers packaging costs, and extends product lifespan.

[0027] like Figure 1 , Figure 2 and Figure 3 As shown, the power semiconductor module provided in this embodiment includes: a substrate 1, a side frame 2, a first power device substrate 3, a second power device substrate 4, an AC power terminal 5, a DC power terminal 6, and a cover plate.

[0028] The side frame 2 is connected to one side surface of the substrate 1, and the side frame 2 and the substrate 1 form an accommodating space. The first power device substrate 3 and the second power device substrate 4 are arranged side by side in the accommodating space enclosed by the side frame 2.

[0029] A first power device chip 31 is disposed on the first power device substrate 3, and the first power device chip 31 is electrically connected to the first power device substrate 3.

[0030] A second power device chip 41 is disposed on the second power device substrate 4, and the second power device chip 41 is electrically connected to the second power device substrate 4.

[0031] Multiple AC power terminals 5 are disposed on one side of the side frame 2; one end of each AC power terminal 5 is electrically connected to the first power device substrate 3 and the second power device substrate 4 respectively; the other end of each AC power terminal 5 extends outward from the side frame 2 for connection to external equipment.

[0032] Multiple DC power terminals 6 are disposed on the other side of the side frame 2; one end of each DC power terminal 6 is electrically connected to the first power device substrate 3 and the second power device substrate 4 respectively; the other end of each DC power terminal 6 extends outward from the side frame 2 for connection to external equipment.

[0033] The cover plate is placed on the end face of the side frame 2 away from the substrate 1, enclosing each substrate and each chip as a whole module.

[0034] In the above scheme, the first power device chip 31 and the second power device chip 41 can be chips in an IGBT module. For example, the first power device chip is a free recovery diode (FRD) chip, and the second power device is an insulated gate bipolar transistor (IGBT) chip. Alternatively, those skilled in the art can also apply the technical solution provided in this embodiment to schemes that integrate other chips.

[0035] The first power device chip 31 and the second power device chip 41 are integrated on the substrate 1 through corresponding substrates, and installed and wired as a whole module with external devices. The number of modules is much smaller than that of existing technologies, which simplifies the installation and wiring difficulty and reduces the space occupation. It also reduces the number of external connections of the module, thereby reducing the parasitic inductance of the circuit, reducing switching losses, and reducing the problem of high fault points caused by multiple connection points. Furthermore, the first power device chip 31 and the second power device chip 41 are uniformly heat-dissipated and cooled through the substrate 1, so that the operating temperature difference of each power chip is small, which is conducive to improving the service life of the overall module.

[0036] The technical solution provided in this embodiment employs a substrate; a side frame connected to one side surface of the substrate; a receiving space formed between the side frame and the substrate; a first power device substrate disposed within the receiving space formed by the side frame; a first power device chip disposed on the first power device substrate, and the first power device chip is electrically connected to the first power device substrate; a second power device substrate disposed within the receiving space formed by the side frame; a second power device chip disposed on the second power device substrate, and the second power device chip is electrically connected to the second power device substrate; the second power device substrate and the first power device substrate are arranged side by side; multiple AC power terminals are disposed on one side of the side frame; one end of each AC power terminal is electrically connected to the first power device substrate and the second power device substrate; the other end of each AC power terminal extends outward from the side frame. Multiple DC power terminals are located on the other side of the side frame; one end of each DC power terminal is electrically connected to the corresponding first power device substrate and second power device substrate; the other end of each DC power terminal extends outward from the side frame; a cover plate is installed on the end face of the side frame away from the substrate, and the module is installed and wired with external equipment as a whole. The number of modules is much less than that of the prior art, which simplifies the installation and wiring difficulty and reduces the space occupation; it also reduces the number of external wiring of the module, thereby reducing the parasitic inductance of the circuit, reducing the switching loss, and reducing the problem of high fault point in multiple connection points; and the first power device chip 31 and the second power device chip 41 are uniformly heat-dissipated and cooled through the substrate 1, so that the operating temperature difference of each power chip is small, which is conducive to improving the service life of the overall module.

[0037] In addition, the above technical solution, as a highly integrated two-in-one semiconductor module, integrates the FRD chip and the IGBT chip into one functional module. By integrating and sharing the power module that realizes the core function, it simplifies the structure, reduces the size, increases the power density, reduces packaging costs, and increases product life.

[0038] Based on the above technical solution, the power semiconductor module provided in this embodiment further includes: a plurality of auxiliary terminals 7, which are respectively disposed on the first power device substrate 3 and the second power device substrate 4, and are electrically connected to the first power device substrate 3 and the second power device substrate 4. The ends of the auxiliary terminals 7 extend outward from the cover plate to connect to external devices.

[0039] The auxiliary terminal 7 can be configured according to the layout within the accommodating space enclosed by the side frame 2. It can be connected by a ribbon cable or be a single needle-like structure, for example, extending in a direction perpendicular to the substrate 1, with its top end passing through the cover plate.

[0040] Furthermore, it also includes: a reinforcing beam 8, which is set between the two opposite sides of the side frame 2, dividing the accommodating space of the side frame 2 into multiple areas, and the first power device liner 3 and the second power device liner 4 should be set in each area.

[0041] One implementation is as follows: the side frame 2 is a rectangular frame, including a long side frame and a short side frame. Three reinforcing beams 8 are connected between the long side frames of the side frame 2, and the three reinforcing beams 8 are spaced apart, dividing the accommodating space into four areas. A first power liner 3 is provided in the left area of ​​the figure, and a second power liner 4 is provided in each of the three areas on the right.

[0042] The module provided in this embodiment includes a first power liner 3 and three second power liners 4. The first power liner 3 is located in a region at the far left of the side frame 2, and the other three second power liners 4 are arranged sequentially in a region at the right end.

[0043] AC power terminal 5 is inserted into the long frame of side frame 2, with one end electrically connected to the substrate and the other end extending from the side frame for electrical connection to external devices. DC power terminal 6 is inserted into the other long frame of side frame 2, with one end electrically connected to the substrate and the other end extending from the side frame for electrical connection to external devices. The number and position of AC power terminals 5 and DC power terminals 6 can be set according to the position of each chip and the traces on the substrate.

[0044] One embodiment is that the substrate 1 is a pure metal plate structure, such as a copper plate or a copper alloy plate. Structural reinforcing particles, such as AlSiC, can also be added to the metal to improve the structural strength of the substrate 1.

[0045] Furthermore, heat dissipation fins can be provided on substrate 1 to accelerate heat dissipation, thereby providing better heat dissipation capabilities for the module, enhancing outflow capacity, and increasing power density. The chip is soldered to the substrate with solder, and the heat from the chip is transferred to the substrate through the solder or sintering layer, and then transferred to substrate 1, through which the heat is dissipated.

[0046] like Figure 2 As shown, substrate 1 is also a rectangular structure with long and short sides. Ten module mounting holes 11 are provided on the long sides of substrate 1, five on each side, for connecting to external devices. Substrate 1 also has eight side frame mounting holes 12 on its long sides, four on each side, for connecting to the side frame 2. Specifically, each backing plate is connected to substrate 1 through one side frame mounting hole 12. The module mounting holes 11 are located at the four corners of the substrate and in the middle of the gaps between the backing plates, ensuring a relatively even distribution of mounting force around the edges of substrate 1, flattening the substrate 1 (which has a certain curvature after soldering) and tightly fitting it to the heat sink.

[0047] A side frame positioning hole 13 is also provided on each long side of the substrate 1. Each side frame positioning hole 13 is located near the top corner of the substrate 1, and the angle between the line connecting two side frame positioning holes 13 and the diagonal of the substrate 1 is less than 5°. One side frame positioning hole 13 has a larger diameter and the other side frame positioning hole 13 has a smaller diameter, which is used to achieve positioning and prevent mistaken identification.

[0048] Four bosses 14 are provided in the area corresponding to each liner to control the thickness of the interconnection area between the substrate 1 and the liner, so as to improve the reliability of the module.

[0049] The side frame 2 is arranged around the perimeter of the substrate 1, enclosing the liner. The long side of the side frame 2 is provided with four sets of AC power terminals 5 and four sets of DC power terminals 6. The first power device liner 3 corresponds to three AC power terminals 5 and two DC power terminals 6; the second power device liner 4 corresponds to one AC power terminal 5 and two DC power terminals 6.

[0050] Placing the DC power terminal 6 on the long edge of the side frame 2 minimizes the parasitic inductance of the module's commutation circuit and improves the module's output current capability. Low parasitic inductance helps suppress voltage overshoot and oscillations generated by the power chip during high-speed switching, allowing the module to operate at higher frequencies, thereby reducing the size of the filter inductor and capacitor in the system and further improving the system-level power density.

[0051] The AC power terminal 5 is placed on the other long side frame of the side frame 2. The center spacing of each set of terminals is the same as the center spacing between the corresponding liner plates to ensure that the electrical system between each liner plate is consistent.

[0052] like Figure 4 As shown, the side frame 2 is provided with two positioning pins 21 at the location corresponding to the side frame positioning hole 13 in the substrate 1. These pins 21 are paired with the side frame positioning hole 13. At the top of the positioning pin 21, there is a small section with a feature diameter smaller than the equipotential surface to achieve effective positioning guidance and facilitate installation.

[0053] The space enclosed by the cover plate, substrate 1, and side frame 2 is filled with insulating filler such as silicone or epoxy resin to achieve electrical insulation between the components within the enclosed space. A cover plate covers the side frame 2, and the two are connected to form a relatively enclosed space. One end of the auxiliary terminal 7 is connected to the corresponding backing plate, and the other end extends through the cover plate to the outside of the cover plate, connecting to an external control device.

[0054] like Figure 5 and Figure 6As shown, in the power module provided in this embodiment, the first power device chip constitutes a GM power unit. The GM power unit is a three-phase six-transistor rectifier topology. Specifically, each first power device substrate 3 contains six commutation units, which are connected in series to form a half-bridge circuit. Each commutation unit consists of a set of large-area IGBT chips and FRD chips connected in parallel. The back electrode of the chip is soldered or sintered onto the substrate, and the top electrode is interconnected with the substrate through bonding wires or metal sheets. A half-bridge circuit is formed through the circuit of the metal layer on the substrate.

[0055] The three converter units T1, T3, and T5, serving as the upper tubes, are arranged on the connection side near the AC power terminal 5; the three converter units T2, T4, and T6, serving as the lower tubes, are arranged on the connection side of the DC power terminal 5. The first negative terminal connection area 32 is... Figure 5 The N-terminal connection area, the first positive terminal connection area 33 is Figure 5 The P-terminal connection area is divided into two parts located on both sides of the N-terminal connection area and connected together at the welding area of ​​the bottom electrode of the upper tube converter unit. The ends of the two P-terminal connection areas are bent towards the N-terminal connection area to form a C-shaped area, surrounding the lower tube converter units T2, T4, T6 and the N-terminal connection area. The two P-terminal connection areas and the N-terminal connection area are arranged alternately. This alternate arrangement divides the commutation path of the half-bridge from a large loop into two small commutation loops, minimizing the integrated inductance of the substrate. At the same time, the upper metal layer of the substrate also integrates auxiliary terminal 7 and a temperature sensor. Auxiliary terminal 7 can be brazed or ultrasonically welded to the substrate.

[0056] like Figure 7 and Figure 8 In the power module provided in this embodiment, the second power device chip constitutes a TM power unit. The TM power unit is a three-phase six-transistor inverter structure. Specifically, each second power device substrate 4 includes two commutation units T1 and T2, connected in series to form a half-bridge circuit. Each commutation unit consists of two sets of parallel IGBT chips and FRD chips, arranged symmetrically to ensure current sharing among the chips. The back electrode of the chip is soldered or sintered onto the substrate, and the top electrode is interconnected with the substrate through bonding wires or metal sheets, forming a half-bridge circuit through the circuit of the metal layer on the substrate.

[0057] The T1 commutator unit, acting as the upper transistor, is located on the connection side near the AC power terminal 5. The T2 commutator unit, acting as the lower transistor, is located on the connection side of the DC power terminal 6. The second negative terminal connection area 42 serves as the N-terminal connection area, and the second positive terminal connection area 43 serves as the P-terminal connection area. The P-terminal connection area is divided into two sections located on both sides of the N-terminal connection area and connected together at the welding area of ​​the bottom electrode of the T1 commutator unit. The ends of the two P-terminal connection areas are bent and extend towards the N-terminal connection area to form a C-shaped area, surrounding the T2 commutator unit and the N-terminal connection area. The two P-terminal connection areas and the N-terminal connection area are arranged alternately. This alternate arrangement divides the commutation path of the half-bridge from a large loop into two small commutation loops, minimizing the integrated inductance of the substrate. At the same time, the metal layer on the second power device substrate 4 also integrates the auxiliary terminal 7 and the temperature sensor. The auxiliary terminal 7 can be brazed or ultrasonically welded to the substrate.

[0058] Auxiliary terminal 7 can be the C / G / E auxiliary terminal in each of the above units.

[0059] The above technical solution combines multiple IGBT power modules into a two-in-one integrated module. The integrated solution can not only significantly reduce the system size and weight, but also optimize the current path, reduce parasitic inductance, improve heat dissipation consistency, and improve system reliability.

[0060] Furthermore, the resulting module has a significantly reduced size and weight: it reduces installation space by more than 20% compared to the traditional dual-module solution; the internal temperature difference of the module using the same substrate is smaller, improving reliability; and installation and maintenance are simpler: simplifying system design and reducing assembly complexity and cost.

[0061] Based on the above solution, the technical solution provided in this embodiment is particularly suitable for medium and high power application scenarios such as new energy vehicle drive systems, industrial frequency converters, and energy storage converters, and can achieve a perfect combination of high power density and high reliability in a limited space.

[0062] It should be noted that, in this disclosure, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element limited by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0063] While the embodiments disclosed herein are as described above, the foregoing content is merely for the purpose of facilitating understanding of this disclosure and is not intended to limit this disclosure. Any person skilled in the art to which this disclosure pertains may make any modifications and changes in form and detail of the implementation without departing from the spirit and scope of this disclosure; however, the scope of patent protection of this disclosure shall still be determined by the scope defined in the appended claims.

Claims

1. A power semiconductor module, characterized in that, include: substrate; Side frame, connected to one side surface of the substrate; The side frame and the substrate form an accommodating space; A first power device substrate is disposed within the receiving space enclosed by the side frame; a first power device chip is disposed on the first power device substrate, and the first power device chip is electrically connected to the first power device substrate accordingly. A second power device substrate is disposed within the receiving space enclosed by the side frame; a second power device chip is disposed on the second power device substrate, and the second power device chip is electrically connected to the second power device substrate; the second power device substrate is disposed side by side with the first power device substrate. Multiple AC power terminals are located on one side of the side frame; one end of each AC power terminal is electrically connected to the first power device substrate and the second power device substrate respectively; the other end of each AC power terminal extends outward from the side frame. Multiple DC power terminals are located on the other side of the side frame; one end of each DC power terminal is electrically connected to the corresponding first power device substrate and second power device substrate; the other end of each DC power terminal extends outward from the side frame. A cover plate is installed on the end face of the side frame that is away from the substrate.

2. The power semiconductor module according to claim 1, characterized in that, Also includes: Multiple auxiliary terminals are respectively disposed on the first power device substrate and the second power device substrate, and are electrically connected to the first power device substrate and the second power device substrate respectively. The end of the auxiliary terminal extends outward from the cover plate.

3. The power semiconductor module according to claim 2, characterized in that, The auxiliary terminals extend in a direction perpendicular to the substrate.

4. The power semiconductor module according to claim 1, characterized in that, Also includes: A reinforcing beam is installed between opposite sides of the side frame, dividing the accommodating space of the side frame into multiple areas, with the first power device liner and the second power device liner correspondingly installed in each area.

5. The power semiconductor module according to claim 4, characterized in that, The first power device chip mounted on the first power substrate is a forward recovery diode (FRD) chip. The second power device mounted on the second power substrate is an insulated gate bipolar transistor (IGBT) chip.

6. The power semiconductor module according to claim 5, characterized in that, There is one first power liner, which is located at one end of the side frame; there are three second power liners, which are arranged sequentially from the other end of the side frame.

7. The power semiconductor module according to claim 1, characterized in that, The substrate is a metal plate with heat dissipation fins on it.

8. The power semiconductor module according to claim 1, characterized in that, The side frame is rectangular; the AC power terminals are located on one long side of the side frame, and the DC power terminals are located on the other long side of the side frame.

9. The power semiconductor module according to claim 1, characterized in that, The first power device substrate includes: a first negative terminal connection region and a first positive terminal connection region; there are two first positive terminal connection regions, which are respectively arranged on both sides of the first negative terminal connection region.

10. The power semiconductor module according to claim 1, characterized in that, The second power device substrate includes: a second negative terminal connection region and a second positive terminal connection region; there are two second positive terminal connection regions, which are respectively arranged on both sides of the second negative terminal connection region.

Images