Photovoltaic devices and their manufacturing methods, topology construction systems

Abstract

This invention discloses a photovoltaic device and its manufacturing method and topology construction system. The photovoltaic device includes: a battery pack composed of a plurality of photovoltaic cells arranged together, each photovoltaic cell having a first terminal on a first surface and a second terminal and a third terminal on a second surface. The first terminal is guided to the second surface through a potential transfer structure, such that the lead-out end of the first terminal is coplanarly distributed with the connection ends of the second and third terminals; an interconnect substrate disposed on the second surface side of the battery pack, including a substrate and a conductor pattern disposed on the substrate, the conductor pattern comprising a plurality of mutually insulated conductor units, with a preset break formed between adjacent conductor units; and a bridge body selectively disposed at the preset break, formed by a conductive material under the action of an external energy field, used to electrically connect the selected conductor units to determine the circuit topology of the photovoltaic device; the lead-out end, second terminal, and third terminal of each photovoltaic cell are electrically connected to the corresponding connection positions on the conductor units.

Description

Technical Field

[0001] This application belongs to the field of photovoltaic cells, specifically relating to a photovoltaic device, a method for manufacturing a photovoltaic device, and a topology construction system for a photovoltaic device. Background Technology

[0002] With the development of photovoltaic technology from monocrystalline silicon cells to tandem cells, current tandem cells mainly include three architectures: two-terminal (2T), four-terminal (4T), and three-terminal (3T). The two-terminal architecture has good process compatibility, but is limited by current matching and is easily affected by spectral changes and cell parameter deviations, resulting in severe spectral mismatch losses and a limited process window. The four-terminal architecture removes the current matching constraint, but its internal interconnection structure is complex and its supporting costs are high. The three-terminal architecture combines the integration convenience of two-terminals with the operational independence of four-terminals, but its front and back electrodes are not on the same plane. Connecting them via traditional solder ribbons requires cross-plane wiring, which can easily damage the cells and increase shading losses. Furthermore, the circuit layout cannot be changed after the photovoltaic module is assembled. Facing the performance differences of cells in mass production, it is difficult to achieve good voltage matching, and there are power generation losses due to mismatch. Therefore, there is an urgent need for a photovoltaic device, manufacturing method, and topology construction system to solve these problems. Summary of the Invention

[0003] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes a photovoltaic device and its manufacturing method and topology construction system, which can solve the problems of complex interconnection process, high risk of shading and microcracks caused by the asymmetrical spatial distribution of front and back electrodes of three-terminal tandem cells, as well as the inability of fixed series and parallel topologies to adapt to the discreteness of cell parameters, the difficulty in avoiding mismatch losses and abnormal bypasses.

[0004] To achieve the above objectives, a first aspect of the present invention provides a photovoltaic device, comprising: a battery pack composed of a plurality of photovoltaic cells arranged in a grid, each photovoltaic cell having a first terminal on a first surface and a second terminal and a third terminal on a second surface, the first terminal being guided to the second surface through a potential transfer structure, such that the lead-out end of the first terminal is coplanarly distributed with the connection ends of the second and third terminals; an interconnect substrate disposed on the second surface side of the battery pack, comprising a substrate and a conductor pattern disposed on the substrate, the conductor pattern comprising a plurality of mutually insulated conductor units, with a predetermined break formed between adjacent conductor units; and a bridge body selectively disposed at the predetermined break, formed by a conductive material under the action of an external energy field, used to electrically connect selected conductor units to determine the circuit topology of the photovoltaic device; the lead-out end, second terminal, and third terminal of each photovoltaic cell are respectively electrically connected to the corresponding connection positions on the conductor units.

[0005] As an alternative embodiment, the bridging body is a conductor formed by energy beam-induced transfer and solidification.

[0006] As an optional embodiment, a latent connector is provided at the preset break point. The latent connector includes a conductive functional material and a decomposable medium. The latent connector has a first state and a second state. In the first state, the latent connector is in an insulating state. In the second state, the decomposable medium in the latent connector is at least partially decomposed and the conductive functional material is densified, making the latent connector conductive. The bridge is the latent connector in the second state.

[0007] As an optional embodiment, a controllable switch structure is also prefabricated on the interconnect substrate. The controllable switch structure is connected in series between the conductor units. The controllable switch structure has a first impedance state and a second impedance state. In the first impedance state, the controllable switch structure is open circuit, and in the second impedance state, the controllable switch structure is closed circuit.

[0008] As an optional embodiment, the lead-out end is electrically connected to the first terminal via a sidewall conductor or a through-hole conductor.

[0009] A photovoltaic device according to an embodiment of the present invention includes: a battery pack, comprising a plurality of photovoltaic cells arranged in a plurality of photovoltaic cells, each photovoltaic cell having a first terminal located on a first surface and a second terminal and a third terminal located on a second surface, the first terminal being guided to the second surface through a potential transfer structure, such that the lead-out end of the first terminal is coplanarly distributed with the connection ends of the second and third terminals; an interconnect substrate disposed on the second surface side of the battery pack, comprising a substrate and a conductor pattern disposed on the substrate, the conductor pattern comprising a plurality of mutually insulated conductor units, with a predetermined break formed between adjacent conductor units; and a bridge body selectively disposed at the predetermined break, formed by a conductive material under the action of an external energy field, used to electrically connect selected conductor units to determine the circuit topology of the photovoltaic device; the lead-out end, second terminal, and third terminal of each photovoltaic cell are respectively electrically connected to corresponding connection positions on the conductor units. Therefore, this application can solve the problems of complex interconnection process, high risk of light shading and microcracks caused by the asymmetrical spatial distribution of front and back electrodes in three-terminal stacked cells, as well as the inability of fixed series and parallel topologies to adapt to the discreteness of battery parameters, the difficulty in avoiding mismatch losses and abnormal bypasses. After the battery arrangement is completed, this application can flexibly adjust the series and parallel topologies according to the measured electrical performance of the battery, bypass defective batteries during the processing stage, and improve the yield of module products. At the same time, this application forms conductive connection paths through laser processing, avoiding thermal stress damage to the perovskite layer and thin silicon substrate caused by high-temperature welding, and reduces organic residues and ensures long-term conductivity reliability by combining conductive paste.

[0010] To achieve the above objectives, a second aspect of the present invention provides a method for manufacturing a photovoltaic device, applicable to any of the photovoltaic devices described above. The method includes: obtaining electrical performance parameters of each photovoltaic cell; assembling each photovoltaic cell in a preset arrangement on an interconnect substrate, such that the lead-out terminals of the first terminals on the first surface of each photovoltaic cell, and the connection terminals of the second terminals and third terminals on the second surface of each photovoltaic cell are electrically connected to the connection positions of the corresponding conductor units on the interconnect substrate; determining a topology scheme that satisfies predetermined matching conditions based on the electrical performance parameters of each photovoltaic cell, and generating a bridging pattern; selectively forming a bridging body at a selected preset break point using an energy beam based on the bridging pattern, thereby obtaining an interconnect substrate equipped with a battery pack and having formed a bridging body; and sequentially stacking a light-transmitting cover layer, a first encapsulation layer, the interconnect substrate equipped with a battery pack and having formed a bridging body, and a second encapsulation layer, followed by lamination and curing.

[0011] As an optional embodiment, the predetermined matching conditions include matching the operating point voltage of a first battery pack composed of a portion of photovoltaic cells with that of a second battery pack composed of another portion of photovoltaic cells.

[0012] As an optional embodiment, the method further includes: detecting abnormal batteries during the formation of the bridging body; and, in response to detecting abnormal batteries, correcting the bridging pattern, disconnecting the electrical connection of the abnormal batteries, and reconstructing the topological connection of adjacent batteries.

[0013] As an optional embodiment, the energy beam is a pulsed laser; according to the bridging pattern, the energy beam is used to selectively form a bridging body at a selected preset break point, including: placing a donor component carrying conductive material above an interconnect substrate, irradiating the donor component with a pulsed laser, causing the conductive material to be transferred and deposited at the preset break point and solidified.

[0014] The method for manufacturing a photovoltaic device according to an embodiment of the present invention is applied to a photovoltaic device as described in any of the preceding claims. The method includes: obtaining electrical performance parameters of each photovoltaic cell; assembling each photovoltaic cell in a preset arrangement on an interconnect substrate, such that the lead-out terminals of the first terminals on the first surface of each photovoltaic cell, the connection terminals of the second terminals and the third terminals on the second surface of each photovoltaic cell are electrically connected to the connection positions of the corresponding conductor units on the interconnect substrate; determining a topology scheme that satisfies predetermined matching conditions based on the electrical performance parameters of each photovoltaic cell, and generating a bridging pattern; selectively forming a bridging body at a selected preset break point using an energy beam based on the bridging pattern, thereby obtaining an interconnect substrate equipped with a battery pack and having formed a bridging body; and sequentially stacking a light-transmitting cover layer, a first encapsulation layer, an interconnect substrate equipped with a battery pack and having formed a bridging body, and a second encapsulation layer, followed by lamination and curing. Therefore, this application can solve the problems of complex interconnection process, high risk of light shading and microcracks caused by the asymmetrical spatial distribution of front and back electrodes in three-terminal stacked cells, as well as the inability of fixed series and parallel topologies to adapt to the discreteness of battery parameters, the difficulty in avoiding mismatch losses and abnormal bypasses. After the battery arrangement is completed, this application can flexibly adjust the series and parallel topologies according to the measured electrical performance of the battery, bypass defective batteries during the processing stage, and improve the yield of module products. At the same time, this application forms conductive connection paths through laser processing, avoiding thermal stress damage to the perovskite layer and thin silicon substrate caused by high-temperature welding, and reduces organic residues and ensures long-term conductivity reliability by combining conductive paste.

[0015] To achieve the above objectives, a third aspect of the present invention provides a topology construction system for photovoltaic devices, comprising: a storage unit storing electrical performance parameters of each photovoltaic cell; a processing unit coupled to the storage unit, configured to determine a topology that satisfies predetermined matching conditions based on the electrical performance parameters, and to generate a bridging map, wherein the bridging map defines the on / off states of each preset break on the interconnect substrate; and an output unit coupled to the processing unit for sending the bridging map to an energy beam processing device.

[0016] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0017] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a schematic diagram of the overall stacked structure of a 3T-IBC stacked photovoltaic module according to an embodiment of this application; Figure 2 This is a schematic diagram of the conductive sidewall lead-out structure of a 3T-IBC tandem cell of a photovoltaic device according to an embodiment of this application; Figure 3This is a schematic diagram of the edge depassivation and containment area of ​​the conductive sidewall of a photovoltaic device in an embodiment of this application; Figure 4 This is a schematic diagram of the sidewall metallization and three-terminal isolation of the conductive sidewall of a photovoltaic device according to an embodiment of this application; Figure 5 This is a schematic diagram of the full back contact programming plane on the back of a photovoltaic device according to an embodiment of this application; Figure 6 This is a layered cross-sectional schematic diagram of a programmable interconnect backplane for a photovoltaic device according to an embodiment of this application; Figure 7(a) is a schematic diagram of the transparent substrate of a programmable interconnect backplane of a photovoltaic device in an embodiment of this application, showing double-sided light transmission. Figure 7(b) is a schematic diagram of a high-reflectivity substrate light trap of a programmable interconnect backplane of a photovoltaic device in an embodiment of this application; Figure 8 This is a schematic diagram of the connection between the three pads of the battery and the backplane node of a photovoltaic device in an embodiment of this application; Figure 9 This is a schematic diagram of the programming node plane and gating state of a photovoltaic device according to an embodiment of this application; Figure 10(a) is a schematic diagram of the donor alignment state of a photovoltaic device based on LIFT laser jumper formation process in an embodiment of this application. Figure 10(b) is a schematic diagram of the laser-induced transfer process of a LIFT-based laser jumper formation process of a photovoltaic device in an embodiment of this application; Figure 10(c) is a schematic diagram of the bridging completion of the LIFT-based laser jumper formation process of a photovoltaic device in an embodiment of this application; Figure 11(a) is a schematic diagram of the first state of the selective laser sintering process of the latent shadow circuit of a photovoltaic device in an embodiment of this application; Figure 11(b) is a schematic diagram of laser scanning and binder decomposition during the selective laser sintering process of the latent image circuit of a photovoltaic device in an embodiment of this application. Figure 11(c) is a schematic diagram of the second state of the selective laser sintering process of the latent image circuit of a photovoltaic device in an embodiment of this application; Figure 12 This is a schematic diagram of the physical fixed state of the battery before the initial programming of a photovoltaic device in an embodiment of this application. Figure 13 This is a schematic diagram of the serial path after the initial programming Map1 execution of a photovoltaic device in an embodiment of this application; Figure 14(a) is a schematic diagram of a 3:1 voltage matching topology of a photovoltaic device in an embodiment of this application; Figure 14(b) is a schematic diagram of a 5:2 voltage matching topology of a photovoltaic device in an embodiment of this application; Figure 15 This is a schematic diagram of the initial state of the antifuse of a photovoltaic device in an embodiment of this application; Figure 16 This is a schematic diagram of an antifuse detection anomaly in a photovoltaic device according to an embodiment of this application; Figure 17 This is a partial cross-sectional schematic diagram of the MIM antifuse of a photovoltaic device in an embodiment of this application; Figure 18 This is a schematic flowchart illustrating a method for manufacturing a photovoltaic device according to an embodiment of this application. Figure 19 This is a schematic diagram illustrating the specific process of manufacturing a photovoltaic device according to an embodiment of this application.

[0018] Reference numerals: Battery pack 101, First surface 102, First terminal 103, Second surface 104, Second terminal 105, Third terminal 106, Interconnect substrate 107, Substrate 108, Conductor pattern 109, Conductor unit 110, Preset break 111, Bridge 112, Latent connector 113, Controllable switch structure 114, Light-transmitting cover layer 115, First encapsulation layer 116, Second encapsulation layer 117. Detailed Implementation

[0019] Embodiments of this application will now be described in more detail with reference to the accompanying drawings. While some embodiments of this application are shown in the drawings, it should be understood that this application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of this application. It should be understood that the drawings and embodiments of this application are for illustrative purposes only and are not intended to limit the scope of protection of this application.

[0020] It should be understood that the steps described in the method embodiments of this application may be performed in different orders and / or in parallel. Furthermore, the method embodiments may include additional steps and / or omit the steps shown. The scope of this application is not limited in this respect.

[0021] As described in the background section, with the development of photovoltaic technology from monocrystalline silicon cells to tandem cells, the three-terminal architecture has the integration convenience of two terminals and the operational independence of four terminals. However, the asymmetrical spatial distribution of the single electrode on the front and the dual electrodes on the back brings great difficulties to module interconnection. The welding surfaces on the front and back are not on the same plane. Traditional processes complete module interconnection through solder strips and use fixed circuit backplanes to realize circuit layout. After the battery is assembled, the series and parallel relationship inside the module cannot be changed. The cross-plane flying wires or complex windings set by traditional processes will cause light-shielding loss on the light-receiving surface and are also prone to problems such as battery microcracks and short circuits. The fixed circuit topology is difficult to solve the problem of electrical performance dispersion and cannot achieve optimal voltage matching according to the maximum power point voltage of each battery, resulting in continuous power mismatch loss. Conventional etched interconnect backplanes do not support dynamic adjustment of the internal circuit of the module.

[0022] To address the aforementioned shortcomings, the photovoltaic device, manufacturing method, and topology construction system proposed in this application can solve the problems of complex interconnection processes, high risk of shading and microcracks caused by the asymmetrical spatial distribution of front and back electrodes in three-terminal tandem cells, as well as the inability of fixed series-parallel topologies to adapt to the discreteness of cell parameters, the difficulty in avoiding mismatch losses, and abnormal bypasses. After the cells are arranged, this application can flexibly adjust the series-parallel topology according to the measured electrical performance of the cells, bypass defective cells during the processing stage, and improve the module yield. At the same time, this application forms conductive connection paths through laser processing, avoiding thermal stress damage to the perovskite layer and thin silicon substrate caused by high-temperature welding, and reduces organic residues and ensures long-term conductivity reliability by combining conductive paste.

[0023] The following is for reference. Figures 1-17 This application describes a photovoltaic device provided in an embodiment.

[0024] like Figure 1 The diagram shows the overall stacked structure of a 3T-IBC photovoltaic module according to an embodiment of this application. The photovoltaic module is constructed by stacking a light-transmitting cover layer 115, a first encapsulation layer 116, a battery pack 101, a second encapsulation layer 117, and an interconnect substrate 107 sequentially from top to bottom along the light-receiving direction. These layers are secured by an aluminum alloy frame. A junction box is located on the back of the device to lead out the positive and negative electrodes after current collection. The light-transmitting cover layer 115 is made of high-transmittance tempered glass or a weather-resistant polymer film, serving as the light-receiving surface of the device and providing structural protection. The first encapsulation layer 116 and the second encapsulation layer 117 are preferably made of polyolefin elastomer (POE) or ethylene-vinyl acetate copolymer (EVA), respectively filling the spaces between the light-transmitting cover layer 115 and the battery pack 101, and between the battery pack 101 and the interconnect substrate 107. After lamination and curing, the layers are bonded, electrically insulated, and moisture-proof.

[0025] The photovoltaic device includes: a battery pack 101, composed of a plurality of photovoltaic cells arranged in a row, each photovoltaic cell having a first terminal 103 located on a first surface 102 and a second terminal 105 and a third terminal 106 located on a second surface 104, the first terminal 103 being guided to the second surface 104 through a potential transfer structure, such that the lead-out end of the first terminal 103 is coplanarly distributed with the connection ends of the second terminal 105 and the third terminal 106; and an interconnecting substrate 107, disposed on the second surface 104 side of the battery pack 101, including a substrate 108 and an interconnecting substrate 107 disposed on the second surface 104 side of the battery pack 101. The conductor pattern 109 on the substrate 108 includes a plurality of mutually insulated conductor units 110, and a preset break 111 is formed between adjacent conductor units 110; the bridge 112 is selectively disposed at the preset break 111, and is formed by conductive material under the action of an external energy field, and is used to electrically connect the selected conductor unit 110 to determine the circuit topology of the photovoltaic device; the first terminal 103 lead-out end, the second terminal 105 and the third terminal 106 of each photovoltaic cell are respectively electrically connected to the corresponding connection position on the conductor unit 110.

[0026] Specifically, such as Figure 2 The diagram shows a schematic of the conductive sidewall lead-out structure of a 3T-IBC tandem solar cell in an embodiment of this application. The photovoltaic cell preferably adopts a perovskite / silicon heterojunction three-terminal (3T-IBC) tandem solar cell. Its front side is the first surface 102 (light-receiving surface), on which a wide-bandgap perovskite top cell is deposited as the top cell region. The first terminal 103 (T1') located on the first surface 102 is usually a top electrode formed by a transparent conductive oxide layer and a metal grid line, used to collect the charge carriers generated by the top cell. Its back side is the second surface 104 (backlighting surface). The bottom cell uses n-type Czochralski single crystal silicon (Cz-Si) as the substrate. The second terminal 105 (T2) and the third terminal 106 (T3) on the second surface 104 are distributed in an interdigitated manner, corresponding to the emitter (p+) and base (n+) contacts of the bottom cell, respectively. The second terminal 105 serves as the positive terminal (T2, +) to connect to the p+ emitter region and forms the T2 emitter pad on the second surface 104. The third terminal 106 serves as the common terminal (T3, negative) to connect to the n+ base region and forms the T3 substrate pad on the second surface 104.

[0027] As an optional embodiment, the lead-out end is electrically connected to the first terminal 103 via a sidewall conductor or a through-hole conductor.

[0028] Specifically, the battery pack edge is provided with conductive sidewalls or metal through-hole (MWT) structures to lead the potential of the first terminal 103 on the first surface 102 to the second surface 104 of the battery, so that the contact points of the first terminal 103, the second terminal 105, and the third terminal 106 are all located on the same plane of the second surface 104 of the battery. An edge insulation / passivation isolation layer is provided between the conductive sidewall and the battery edge to prevent leakage or short circuit between the conductive sidewall and the battery substrate. An intermediate conductive composite layer (tunnel junction) is provided between the bottom battery and the top battery to realize the recombination connection of charge carriers between the top battery and the bottom battery. An edge conductive isolation region is also provided at the battery edge to limit the conduction range of the conductive sidewall and avoid crosstalk between different areas.

[0029] like Figure 3 The diagram illustrates the edge passivation and bandgap treatment of a photovoltaic device's conductive sidewall in an embodiment of this application. The battery consists of a perovskite top cell, an intermediate conductive composite layer, and an n-type crystalline silicon bottom cell, stacked sequentially from the first surface 102 to the second surface 104. The perovskite top cell has a transparent conductive oxide layer and low-temperature silver grid lines on its top as the top electrode of the first terminal 103. The back of the n-type crystalline silicon bottom cell is covered with a SiNx / AlOx stacked passivation layer. A nanosecond laser is used to selectively remove the back SiNx / AlOx stacked passivation layer at the edge of the battery, exposing the edge region of the n-type crystalline silicon substrate, facilitating contact between subsequent conductive materials and the substrate. During the passivation process, the laser scanning range is controlled within a specific width of the battery edge, while preserving the pn junction bandgap (the bandgap region, a pn junction area at a certain distance from the edge) from laser irradiation, preventing damage to the internal pn junction structure or edge short circuits caused by laser processing. After laser passivation treatment, a clean silicon surface is exposed at the edge of the battery. Conductive silver paste is then coated in this area through processes such as aerosol spraying and edge dipping to form a conductive sidewall, through which the first terminal 103 is led out to the second surface 104.

[0030] like Figure 4The diagram shows the sidewall metallization and three-terminal isolation of a photovoltaic device according to an embodiment of this application. A conductive sidewall is formed by coating and curing a conductive paste (such as thixotropic silver paste) on the exposed edge area of ​​the battery. This conductive sidewall extends longitudinally along the edge of the battery. One end of the sidewall makes electrical contact with the first terminal 103 located on the first surface 102, and the other end extends to the edge area of ​​the second surface 104, forming a back-side landing point. After curing at this landing point, the lead-out end of the first terminal 103 is formed. The interdigitated second terminal 105 located on the second surface 104 (connects to the bottom battery p+ emitter)... The first terminal 103 lead-out end, the second terminal 105 connection end, and the third terminal 106 connection end (connected to the n+ base of the bottom battery) are respectively formed on the second surface 104. A pn ​​junction block and an electrical isolation region are provided between the conductive sidewall and the edge of the battery to ensure electrical isolation between the conductive sidewall and the bottom battery substrate. After the sidewall is metallized, the first terminal 103 lead-out end, the second terminal 105 connection end and the third terminal 106 connection end are all located on the same plane of the second surface 104, forming three coplanarly distributed connection ends, and the three are electrically isolated from each other through an edge insulation / passivation isolation layer.

[0031] like Figure 5 The diagram shows a schematic of a full-back contact programming plane on the back of a photovoltaic device according to an embodiment of this application. The second terminal 105 is located above the p+ emitter region and makes ohmic contact with that region. The third terminal 106 is located above the n+ base contact region and makes ohmic contact with that region. The lead-out end of the first terminal 103 is guided to the edge region of the battery through a conductive sidewall. The height difference between the surfaces of the three terminals is controlled within ±10μm, and they are located in the same plane to form a full-back contact programming plane. This full-back contact programming plane unifies all electrical connection points originally distributed on the first surface 102 and the second surface 104 of the battery onto the same plane of the second surface 104.

[0032] like Figure 6Figure 7(a) shows a layered cross-sectional view of a programmable interconnect backplane for a photovoltaic device according to an embodiment of this application. The interconnect substrate 107 is disposed on the second surface 104 side of the battery pack 101, including a base 108 that provides support and insulation, and a conductor pattern 109 attached to the base 108. Figure 7(a) shows a schematic diagram of double-sided light transmission of the transparent substrate of a programmable interconnect backplane for a photovoltaic device according to an embodiment of this application. The base 108 can be made of transparent material as needed (3.2mm tempered glass or 300μm thick transparent PET / PVDF composite backplane with a light transmittance >90%), so that incident light from the second surface 104 side can pass through the base 108 and enter the battery pack 101, thereby achieving double-sided power generation. Figure 7(b) shows a schematic diagram of a high-reflectivity substrate light trapping mechanism for a programmable interconnect backplane of a photovoltaic device according to an embodiment of this application. The substrate 108 can be a high-reflectivity white backplane. When light passes through the gaps or edges of the battery pack 101 and reaches the surface of the substrate 108, it is reflected back to the battery pack 101 by the high-reflectivity white backplane, enhancing the light trapping effect and improving the secondary utilization efficiency of light energy. The conductor pattern 109 is preferably a copper layer prepared by physical vapor deposition (PVD) or chemical copper plating, with a thickness controlled in the range of 35-70 μm. It is patterned into several mutually insulated conductor units 110 by photolithography or laser etching. Adjacent conductor units 110 are separated by a preset break 111, so that the entire conductor pattern 109 is electrically disconnected in the initial state. An insulating dielectric layer (such as polyimide PI or photosensitive solder resist ink) is applied over the conductor pattern 109. This insulating dielectric layer has windows at preset connection positions, exposing the conductor units 110 below to form logic programming node pad groups, enabling electrical connection of the battery terminal connections. The remaining area is covered by the insulating dielectric layer to achieve electrical isolation and protection. The interconnect substrate (107) is arranged with the pad window side facing the second surface (104) of the battery pack (101), so that the terminal connections of each battery can form electrical connections with the corresponding logic programming node pads.

[0033] like Figure 8The diagram shown is a schematic diagram of the connection between the three pads of the battery and the backplane node of a photovoltaic device in an embodiment of this application. The second encapsulation layer 117 is disposed between the battery pack 101 and the interconnect substrate 107. The second encapsulation layer 117 and the logic programming node pad group on the interconnect substrate 107 are provided with node openings at the corresponding positions, exposing the three connection ends of the second surface 104 of the battery and the corresponding logic programming node pads on the interconnect substrate 107. Conductive adhesive or low-temperature solder paste is applied to the window of the node, and the first terminal 103 lead-out end, the second terminal 105 connection end, and the third terminal 106 connection end (T1' / T2 / T3 coplanar pad group) of the battery are electrically connected and fixed to the corresponding conductor unit 110 on the interconnect substrate 107. By filling the window with conductive adhesive or low-temperature solder paste, the connection ends of each battery terminal of the battery pack 101 are connected to the corresponding side of the interconnect substrate 107, so that the first terminal 103 lead-out end, the second terminal 105 connection end, and the third terminal 106 connection end form an encapsulation interface with the backplane pad. At the same time, the second encapsulation layer 117 remains intact in the non-window area, ensuring that the area on the back of the battery other than the connection end is electrically insulated from the interconnect substrate 107.

[0034] like Figure 9 The diagram shows a schematic of the programming node plane and selection state of a photovoltaic device according to an embodiment of this application. Preset breaks 111 are provided between adjacent conductor units 110. The width of the preset breaks 111 is preferably controlled within the range of 50-200 μm. At the preset breaks 111, for the LIFT (Liquid Laser Transform) technology route, the preset breaks 111 are physically open circuits, completely disconnecting adjacent conductor units 110. For the selective laser sintering (SLAS) technology route, a latent connector 113 is pre-placed at the preset breaks 111. This latent connector 113 is initially in a high-resistivity state due to the isolation effect of the decomposable dielectric, equivalent to an open circuit. Visual positioning reference points are also provided on the interconnect substrate 107 to assist the vision system in identifying and locating the positions of each preset break 111 during laser programming. After the module is assembled, according to the preset jumper diagram, the energy beam selectively forms a bridge 112 at the selected preset break 111, so that the designated adjacent conductor units 110 form a low-resistance conductive connection, realizing a specific circuit topology. The unselected preset break 111 remains in its original open circuit or high-resistance state.

[0035] As an optional embodiment, the bridging body 112 is a conductor formed by energy beam-induced transfer and solidification.

[0036] Specifically, the bridging body 112 is selectively disposed at the preset break 111. A donor substrate (preferably a quartz glass sheet) carrying conductive material is irradiated by a pulsed laser. The side of the donor substrate facing the interconnect substrate 107 is coated with silver nanoparticle paste (preferably 20-50 μm thick). The conductive material is preferably a high-viscosity silver nanoparticle paste (its solid content is controlled between 60-80 wt%, the average particle size of the silver particles is 20-50 nm, and it is mixed with an appropriate amount of binder and high-boiling-point solvent). As shown in Figure 10(a), it is a schematic diagram of the donor alignment state of a photovoltaic device based on LIFT laser jumper formation process in an embodiment of this application. The donor substrate is disposed above the preset break 111 of the interconnect substrate 107, so that the conductive material layer is opposite to the break area and maintains a predetermined gap (usually controlled within the range of 50-100 μm). As shown in Figure 10(b), this is a schematic diagram of the laser-induced transfer process of a photovoltaic device based on LIFT laser jumper formation in an embodiment of this application. In the laser-induced transfer stage, a pulsed laser beam passes through the back of the donor substrate and irradiates the interface between the conductive material layer and the donor. Under the conditions that the laser energy density reaches 40-200 mJ / cm² and the pulse width is 10 ns-20 ps, ​​the conductive material layer at the interface absorbs the laser energy and instantly vaporizes or plasmaizes, generating a local high-pressure impact force. This impact force drives a small amount of conductive paste in the conductive material layer to detach from the surface of the donor substrate in the form of microdroplets and deposit at the preset fracture 111. As shown in Figure 10(c), this is a schematic diagram of the bridging completion process of a LIFT-based laser jumper formation process for a photovoltaic device in an embodiment of this application. The deposited conductive paste spreads and fills the electrical connection path at the break point. After subsequent laser irradiation or subsequent heat treatment, the solvent in the deposited conductive paste evaporates, the organic binder decomposes, and the silver nanoparticles undergo sintering and densification, eventually solidifying to form a solid bridge 112.

[0037] It should be noted that the binder is preferably QPAC-40 (polypropylene carbonate). QPAC-40 completely decomposes into gas at around 250℃ and can rapidly generate high-pressure gas to drive the jet during laser-induced rapid heating (millisecond level), while ensuring no carbon residue after sintering (Ash residue <10 ppm). High-boiling-point solvents (such as terpineol) maintain stability during the printing process.

[0038] As an optional embodiment, a latent connector 113 is provided at the preset break 111. The latent connector 113 includes a conductive functional material and a decomposable medium. The latent connector 113 has a first state and a second state. In the first state, the latent connector 113 is in an insulating state. In the second state, the decomposable medium in the latent connector 113 is at least partially decomposed and the conductive functional material is densified, so that the latent connector 113 is in a conductive state. The bridge 112 is the latent connector 113 in the second state.

[0039] Specifically, as shown in Figure 11(a), which is a schematic diagram of the first state of the selective laser sintering process of the latent circuit of a photovoltaic device in an embodiment of this application, the latent connector 113 in the first state (unactivated high-resistivity state) has AgNPs / QPAC dormant ink pre-printed at the preset break 111 on the interconnect substrate 107. The dormant ink contains polymer-encapsulated silver nanoparticles (AgNPS). The decomposable medium acts as an isolation layer surrounding the silver nanoparticles, forming a steric hindrance effect, which keeps the silver nanoparticles physically separated. At the same time, the decomposable medium itself is an insulating material, so that the latent connector 113 as a whole presents a high-resistivity insulating state, with an initial resistivity greater than 10. 6Ω·cm. In the first state, the preset break 111 remains electrically disconnected, and there is no current path between adjacent conductor units 110. When it is necessary to establish an electrical connection at a specific location, the selected latent connector 113 is selectively irradiated by an external energy field (preferably a continuous wave or a high-frequency pulsed laser beam, with a wavelength of 1064 nm). As shown in Figure 11(b), it is a schematic diagram of laser scanning and binder decomposition during the selective laser sintering process of a latent circuit of a photovoltaic device in this embodiment. The laser energy excites the surface plasmon resonance (SPR) effect of the silver nanoparticles, causing the particle temperature to rise to above 300°C in a short time. Under this temperature condition, the QPAC binder undergoes depolymerization and gasification decomposition, and the decomposition products (mainly small molecule gases such as carbon dioxide and water) escape from the connector. The silver nanoparticles lose their encapsulation and isolation protection. As shown in Figure 11(c), it is a schematic diagram of the selective laser sintering process of a latent circuit of a photovoltaic device in this embodiment. This illustration shows the second state of the selective laser sintering process for a latent circuit in a photovoltaic device. Silver nanoparticles undergo necking and fusion to form a sintered necked silver network. The latent connector 113 transitions to the second state (sintered low-resistivity state). In this state, the decomposable medium decomposes at least partially, and the conductive functional material densifies, causing the latent connector 113 to change from a high-resistivity insulating state to a low-resistivity conductive state. The latent connector 113 in the second state then forms a bridge 112, which reliably electrically connects adjacent conductor units 110. After optimizing process conditions (e.g., controlling the laser energy density at 100-150 J / cm²), the resistivity of the resulting bridge 112 can be reduced to 3-5 µΩ·cm, approaching the conductivity level of bulk silver. The decomposable medium completely escapes in gaseous form after decomposition, leaving very little residue (ash residue less than 10 ppm), ensuring the purity and reliability of the conductive connection interface. Latent connectors 113 can be pre-printed on the preset breaks 111 on the interconnect substrate 107. The laser scans the specified path only according to the jumper pattern, so that the latent connectors 113 at the selected preset breaks 111 change from a high-resistance state to a low-resistance conducting state, while the latent connectors 113 at the unselected preset breaks 111 remain in their original high-resistance insulating state, thus realizing selective programming of the circuit topology.

[0040] like Figure 12 The diagram shows the physical fixation state of a photovoltaic device before initial programming in an embodiment of this application. The first terminal 103 lead-out terminal (T1'), the second terminal 105 connection terminal (T2), and the third terminal 106 connection terminal (T3) are respectively fixed on the corresponding conductor unit 110 connection position on the interconnect substrate 107 to realize the physical and electrical connection between the battery and the interconnect substrate 107. The preset break 111 between each conductor unit 110 is a physical open circuit for the LIFT technology route and a high-resistivity state of the latent connector 113 (equivalent to an open circuit) for the selective laser sintering technology route.

[0041] like Figure 13 The diagram shows the series path of a photovoltaic device after the initial programming Map1 execution in an embodiment of this application. The top battery series branch connects the first terminal 103 (T1'i) of the previous battery to the third terminal 106 (T3i+1) of the next battery via a bridge 112, forming the series path of the top battery. The bottom battery series branch connects the second terminal 105 (T2i) of the previous battery to the third terminal 106 (T3i+1) of the next battery via a bridge 112, forming the series path of the bottom battery. The unselected preset break 111 remains in its original open circuit or high-resistance state and does not form a bridge 112.

[0042] The module's circuit topology is determined based on a voltage matching algorithm, and the voltage matching relationship satisfies:

[0043] in, The number of batteries connected in series is the base number. The number of top-mounted batteries connected in series. This refers to the maximum power point voltage of a single base cell. This is the maximum power point voltage of a single top cell.

[0044] As shown in Figure 14(a), this is a schematic diagram of a 3:1 voltage matching topology of a photovoltaic device in an embodiment of this application. In a matching scheme where the ratio of the number of bottom cells in series to the number of top cells in series is 3:1, the maximum power point voltage of one top cell is 1.68V. The total voltage after three bottom cells in series and one top cell in parallel is 1.68V. Since the two voltages are equal, a 3:1 voltage matching topology can be constructed by connecting the top cell series branch and the bottom cell series branch in parallel through their respective positive terminals (T1' / T2).

[0045] As shown in Figure 14(b), this is a schematic diagram of a 5:2 voltage matching topology for a photovoltaic device in an embodiment of this application. In a matching scheme where the ratio of the number of bottom cells in series to the number of top cells in series is 5:2, the total voltage after two top cells are connected in series is 3.50V, and the total voltage after five bottom cells are connected in series and two top cells are connected in parallel is 3.60V. The two voltages are approximately equal. By connecting the top cell series branch and the bottom cell series branch in parallel, a 5:2 voltage matching topology can be constructed.

[0046] As an optional embodiment, a controllable switch structure 114 is also prefabricated on the interconnect substrate 107. The controllable switch structure 114 is connected in series between the conductor units 110. The controllable switch structure 114 has a first impedance state and a second impedance state. In the first impedance state, the controllable switch structure 114 is open circuit, and in the second impedance state, the controllable switch structure 114 is closed circuit.

[0047] Specifically, such as Figure 15 The diagram shown is a schematic of the initial state of an antifuse in a photovoltaic device according to an embodiment of this application. A controllable switch structure 114 is also prefabricated on the interconnect substrate 107. The controllable switch structure 114 is connected in series between the conductor units 110. The controllable switch structure 114 is preferably an antifuse structure (Metal-Insulator-Metal, MIM), which is formed by stacking a first conductive layer, an insulating dielectric layer and a second conductive layer in sequence. In the initial state, the controllable switch structure 114 is in a first impedance state (the insulating dielectric layer maintains complete insulation barrier function, the first conductive layer and the second conductive layer are separated by the insulating layer, and a current path cannot be formed. The controllable switch structure 114 is in an open circuit state). The electrical connection between the corresponding conductor units 110 is in an open mode. The current flows into the base cell through the third terminal 106 connection terminal of the previous cell and then flows out to the subsequent circuit through the second terminal 105 connection terminal of the base cell.

[0048] like Figure 16 The diagram shown is a schematic diagram of an anti-fuse detection anomaly in a photovoltaic device according to an embodiment of this application. When the module detects a performance defect (such as low power, hot spot risk, etc.) in a certain battery cell during testing or operation, the control system generates a secondary programming map (Map2) and applies an external energy field to the controllable switch structure 114. Preferably, a high-power pulsed laser beam is used to selectively irradiate the selected controllable switch structure (114) through the substrate 108 (laser transmission area) of the interconnect substrate 107, or a voltage pulse higher than the insulation layer breakdown threshold is applied. Under the action of this external energy field, the insulating dielectric layer undergoes irreversible dielectric breakdown, the insulation barrier between the first conductive layer and the second conductive layer is destroyed, and the two metal layers undergo local melting and interpenetration at the breakdown point to form a low-resistance conductive channel, causing the controllable switch structure 114 to change from the first impedance state to the second impedance state (circuit state). Since this breakdown process is a one-time irreversible change, the controllable switch structure 114 maintains the initial open circuit state during normal operation and is selectively triggered to conduct only when bypass logic or circuit reconstruction is required.

[0049] like Figure 17 The diagram shown is a partial cross-sectional view of a photovoltaic device's MIM antifuse wire in an embodiment of this application. The insulating dielectric layer can be made of silicon nitride (SiNx), silicon oxide (SiOx), or a high dielectric constant metal oxide film. The thickness is preferably controlled within the range of 30-100 nm to ensure stable insulation breakdown characteristics. In the first impedance state, the upper metal layer and the lower metal layer are separated by the insulating dielectric layer, and a current path cannot be formed. When a high-power laser or voltage pulse is applied, the insulating dielectric layer undergoes irreversible dielectric breakdown, and the upper metal layer and the lower metal layer form a permanent low-resistance conductive channel at the breakdown point, causing the controllable switch structure 114 to switch to the second impedance state.

[0050] like Figure 18 The diagram shown is a flowchart illustrating a method for manufacturing a photovoltaic device according to an embodiment of this application.

[0051] Step S1801: Obtain the electrical performance parameters of each photovoltaic cell.

[0052] Specifically, such as Figure 19 The diagram shown is a schematic flowchart of a photovoltaic device manufacturing method in an embodiment of this application. Each photovoltaic cell is measured by an IV tester, and electrical performance parameters are recorded, including maximum power point voltage, open circuit voltage, short circuit current, and fill factor. The maximum power point voltage is recorded for the corresponding values ​​of the top cell and the bottom cell. The obtained electrical performance parameters are transmitted and stored in the processing unit.

[0053] It should be noted that the IV tester (current-voltage characteristic tester) applies a controllable voltage to the solar cell and measures the current response to draw a clear IV curve, which can intuitively reflect the conduction characteristics, leakage current and conversion efficiency of the device.

[0054] Step S1802: Assemble each photovoltaic cell on the interconnect substrate according to a preset arrangement, so that the lead-out end of the first terminal on the first surface of each photovoltaic cell, the connection end of the second terminal and the third terminal on the second surface of each photovoltaic cell are electrically connected to the connection position of the corresponding conductor unit on the interconnect substrate.

[0055] Specifically, a second encapsulation layer is laid on top of the interconnect substrate. The second encapsulation layer has node openings at positions corresponding to the connection points of the conductor units on the interconnect substrate. The second surfaces of each photovoltaic cell are placed on the second encapsulation layer with the second surface facing the interconnect substrate. The first terminal lead-out end on the first surface of each photovoltaic cell, and the second terminal connection end and the third terminal connection end on the second surface of each photovoltaic cell are aligned with the connection points of the corresponding conductor units on the interconnect substrate and exposed through the node openings on the second encapsulation layer. Then, conductive connection media such as conductive adhesive or low-temperature solder paste are coated into the node openings to form electrical connections between the lead-out end of the first terminal, the connection end of the second terminal, and the connection end of the third terminal of each photovoltaic cell and the connection points of the corresponding conductor units on the interconnect substrate.

[0056] Step S1803: Based on the electrical performance parameters of each photovoltaic cell, determine the topology scheme that meets the predetermined matching conditions and generate a bridging map.

[0057] As an optional embodiment, the predetermined matching conditions include matching the operating point voltage of a first battery pack composed of a portion of photovoltaic cells with that of a second battery pack composed of another portion of photovoltaic cells.

[0058] Specifically, the equivalent topology diagrams for 3:1 and 5:2 voltage matching of photovoltaic devices are shown. The circuit topology of the module is determined based on the voltage matching algorithm, and the voltage matching relationship satisfies:

[0059] in, The number of batteries connected in series is the base number. The number of top-mounted batteries connected in series. This refers to the maximum power point voltage of a single base cell. This is the maximum power point voltage of a single top cell.

[0060] The processing unit calculates the voltage matching ratio between the top and bottom cells based on the maximum power point voltage (MPPT) data of each photovoltaic cell. When the MPPT of a single top cell is approximately 1.68V and that of a single bottom cell is approximately 0.56V, the voltage ratio is approximately 3:1. The total voltage after connecting three bottom cells in series with one top cell in parallel is 1.68V. When the MPPT of a single top cell is approximately 1.75V and that of a single bottom cell is approximately 0.72V, the voltage ratio is approximately 2.4:1. The total voltage after connecting five bottom cells in series with two top cells in series is 3.60V, which is approximately equal to the previous ratio. The algorithm selects the scheme with the smallest voltage deviation from various feasible series combinations as the optimal topology, determines the series or parallel connection relationship of each photovoltaic cell in the circuit, and generates a bridging diagram. The bridging diagram can define the on / off state of each preset break on the interconnect substrate, specifying which preset breaks need to form a bridge to achieve electrical connection, and which preset breaks remain open or in a high-resistance state without bridging.

[0061] Step S1804: Based on the bridging pattern, selectively form a bridging body at a selected preset break point using an energy beam to obtain an interconnected substrate equipped with a battery pack and having formed a bridging body.

[0062] Specifically, according to the instructions of the bridging pattern, the energy beam selectively forms a bridge at the selected preset break point, so that a low-resistance conductive connection is formed between the specified adjacent conductor units, realizing a specific circuit topology. The preset break points that are not selected continue to remain in their original open circuit or high-resistance state and do not form a bridge.

[0063] As an optional embodiment, the method further includes: detecting abnormal batteries during the formation of the bridging body; and, in response to detecting abnormal batteries, correcting the bridging pattern, disconnecting the electrical connection of the abnormal batteries, and reconstructing the topological connection of adjacent batteries.

[0064] Specifically, during laser programming, the vision system monitors the physical state of each photovoltaic cell (e.g., whether there are cracks, fragments, or other defects) or identifies abnormal cell cells by combining electrical performance test data. When a physical defect is detected in a photovoltaic cell, the processing unit corrects the bridging pattern in real time, bypasses the abnormal cell from the series circuit by controlling the corresponding controllable switch structure, and adjusts the topology of the surrounding cells to maintain voltage balance. The corrected bridging pattern is sent to the energy beam processing equipment through the output unit, and the laser system continues to execute the programming operation according to the corrected bridging pattern.

[0065] As an optional embodiment, the energy beam is a pulsed laser; according to the bridging pattern, the energy beam is used to selectively form a bridging body at a selected preset break point, including: placing a donor component carrying conductive material above an interconnect substrate, irradiating the donor component with a pulsed laser, causing the conductive material to be transferred and deposited at the preset break point and solidified.

[0066] Specifically, a conductive material layer is coated on the side of the donor component facing the interconnect substrate. The conductive material is preferably a high-viscosity silver nanoparticle paste. The donor component is placed above a predetermined break in the interconnect substrate, so that the conductive material layer is opposite to the predetermined break area and maintains a predetermined gap. A pulsed laser beam passes through the back of the donor component and irradiates the interface between the conductive material layer and the donor component. After absorbing the laser energy, the conductive material layer at the interface generates a local high-pressure impact force, causing the conductive material to detach from the surface of the donor component in the form of microdroplets and deposit at the predetermined break. The deposited conductive material is cured to form a bridge.

[0067] Step S1805: The light-transmitting cover layer, the first encapsulation layer, the interconnect substrate with the battery pack assembled and the bridged body formed, and the second encapsulation layer are sequentially stacked and then laminated and cured.

[0068] Specifically, the light-transmitting cover layer, the first encapsulation layer, the interconnect substrate with the battery pack and the bridged structure formed by the interconnection, and the second encapsulation layer are stacked in sequence and then placed in a laminator for lamination and curing. The laminator is heated to a preset lamination temperature (e.g., 140-150℃) in a vacuum environment and held for a preset time (e.g., 10-20 minutes) to allow the first and second encapsulation layers to undergo a melting and cross-linking reaction, thus bonding and fixing the light-transmitting cover layer, the battery pack, and the interconnect substrate into a whole. During the lamination process, the conductive adhesive or low-temperature solder paste is cured, enhancing the physical and electrical connection reliability between the terminal connection ends of each photovoltaic cell and the corresponding conductor unit connection positions on the interconnect substrate.

[0069] According to the photovoltaic device manufacturing method provided in the embodiments of this application, applied to photovoltaic devices as described in any of the foregoing, the method includes: obtaining the electrical performance parameters of each photovoltaic cell; assembling each photovoltaic cell in a preset arrangement on an interconnect substrate, such that the lead-out terminals of the first terminals on the first surface of each photovoltaic cell, the connection terminals of the second terminals and the third terminals on the second surface of each photovoltaic cell are electrically connected to the connection positions of the corresponding conductor units on the interconnect substrate; determining a topology scheme that meets predetermined matching conditions based on the electrical performance parameters of each photovoltaic cell, and generating a bridging pattern; selectively forming a bridging body at a selected preset break point using an energy beam based on the bridging pattern, thereby obtaining an interconnect substrate equipped with a battery pack and having formed a bridging body; and sequentially stacking a light-transmitting cover layer, a first encapsulation layer, an interconnect substrate equipped with a battery pack and having formed a bridging body, and a second encapsulation layer, followed by lamination and curing. Therefore, this application can solve the problems of complex interconnection process, high risk of light shading and microcracks caused by the asymmetrical spatial distribution of front and back electrodes in three-terminal stacked cells, as well as the inability of fixed series and parallel topologies to adapt to the discreteness of battery parameters, the difficulty in avoiding mismatch losses and abnormal bypasses. After the battery arrangement is completed, this application can flexibly adjust the series and parallel topologies according to the measured electrical performance of the battery, bypass defective batteries during the processing stage, and improve the yield of module products. At the same time, this application forms conductive connection paths through laser processing, avoiding thermal stress damage to the perovskite layer and thin silicon substrate caused by high-temperature welding, and reduces organic residues and ensures long-term conductivity reliability by combining conductive paste.

[0070] It should be noted that the above description describes some embodiments of the present invention. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps described in the claims may be performed in a different order than that shown in the above embodiments and still achieve the desired results. Furthermore, the processes depicted in the drawings do not necessarily require a specific or sequential order to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0071] Based on the same concept, this application also provides a photovoltaic device topology construction system for implementing the manufacturing method of the corresponding photovoltaic device in any of the foregoing embodiments, and has the beneficial effects of the corresponding photovoltaic device manufacturing method embodiments, which will not be repeated here.

[0072] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, it should be noted that the scope of the methods and apparatuses in the embodiments of this application is not limited to performing functions in the order shown or discussed, but may also include performing functions substantially simultaneously or in the reverse order, depending on the functions involved. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

[0073] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other implementations under the guidance of this application without departing from the spirit and scope of the claims. All of these implementations are within the protection scope of this application.

Claims

1. A photovoltaic device, characterized in that, include: The battery pack (101) is composed of a plurality of photovoltaic cells arranged in a row. Each photovoltaic cell has a first terminal (103) located on a first surface (102) and a second terminal (105) and a third terminal (106) located on a second surface (104). The first terminal (103) is guided to the second surface (104) through a potential transfer structure, so that the lead-out end of the first terminal (103) is coplanarly distributed with the connection end of the second terminal (105) and the third terminal (106). An interconnect substrate (107) is disposed on the second surface (104) side of the battery pack (101), including a substrate (108) and a conductor pattern (109) disposed on the substrate (108). The conductor pattern (109) includes a plurality of mutually insulated conductor units (110), and a predetermined break (111) is formed between adjacent conductor units (110). A bridge (112) is selectively disposed at the preset break (111), and is formed by a conductive material under the action of an external energy field. It is used to electrically connect the selected conductor unit (110) to determine the circuit topology of the photovoltaic device. The first terminal (103), the second terminal (105), and the third terminal (106) of each photovoltaic cell are electrically connected to the corresponding connection positions on the conductor unit (110).

2. The photovoltaic device according to claim 1, characterized in that, The bridging body (112) is a conductor formed by energy beam-induced transfer and solidification.

3. The photovoltaic device according to claim 1, characterized in that, A latent connector (113) is provided at the preset break (111). The latent connector (113) includes a conductive functional material and a decomposable medium. The latent connector (113) has a first state and a second state. In the first state, the latent connector (113) is in an insulating state. In the second state, the decomposable medium in the latent connector (113) is at least partially decomposed and the conductive functional material is densified, so that the latent connector (113) is in a conductive state. The bridge (112) is the latent connector (113) in the second state.

4. The photovoltaic device according to claim 3, characterized in that, A controllable switch structure (114) is also prefabricated on the interconnect substrate (107). The controllable switch structure (114) is connected in series between the conductor units (110). The controllable switch structure (114) has a first impedance state and a second impedance state. In the first impedance state, the controllable switch structure (114) is open circuit, and in the second impedance state, the controllable switch structure (114) is closed circuit.

5. The photovoltaic device according to claim 1, characterized in that, The lead-out end is electrically connected to the first terminal (103) through a sidewall conductor or a through-hole conductor.

6. A method for manufacturing a photovoltaic device, characterized in that, The method, applied to a photovoltaic device as described in any one of claims 1 to 5, comprises: Obtain the electrical performance parameters of each photovoltaic cell; Each photovoltaic cell is assembled on the interconnect substrate in a preset arrangement, so that the lead-out end of the first terminal on the first surface of each photovoltaic cell, the connection end of the second terminal and the third terminal on the second surface of each photovoltaic cell are electrically connected to the connection position of the corresponding conductor unit on the interconnect substrate. Based on the electrical performance parameters of each photovoltaic cell, a topology scheme that meets the predetermined matching conditions is determined, and a bridging map is generated. According to the bridging pattern, the energy beam selectively forms a bridging body at a selected preset break point to obtain an interconnected substrate equipped with the battery pack and in which the bridging body has been formed. The light-transmitting cover layer, the first encapsulation layer, the interconnect substrate on which the battery pack is assembled and has formed the bridging body, and the second encapsulation layer are sequentially stacked and then laminated and cured.

7. The method for manufacturing a photovoltaic device according to claim 6, characterized in that, The predetermined matching conditions include: The first battery pack, composed of a portion of the photovoltaic cells, and the second battery pack, composed of another portion of the photovoltaic cells, are matched at their operating point voltages.

8. The method for manufacturing a photovoltaic device according to claim 6, characterized in that, The method further includes: Abnormal batteries are detected during the formation of the bridge. In response to the detection of an abnormal battery, the bridging pattern is corrected, the electrical connection of the abnormal battery is disconnected, and the topology connection of adjacent batteries is reconstructed.

9. The method for manufacturing a photovoltaic device according to claim 6, characterized in that, The energy beam is a pulsed laser; The step of selectively forming the bridging body at the selected preset break point using an energy beam, based on the bridging pattern, includes: A donor component carrying conductive material is placed above the interconnect substrate, and the donor component is irradiated with the pulsed laser to transfer and deposit the conductive material to the preset fracture site and solidify it.

10. A topology construction system for a photovoltaic device, characterized in that, include: The storage unit stores the electrical performance parameters of each photovoltaic cell; The processing unit, coupled to the storage unit, is configured to determine a topology that meets predetermined matching conditions based on the electrical performance parameters, and generate a bridging map, wherein the bridging map defines the on / off state of each preset break on the interconnect substrate. An output unit, coupled to the processing unit, is used to send the bridging spectrum to an energy beam processing device.

Images