semiconductor element

Abstract

A semiconductor device includes a first semiconductor layer, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer, and an electrode structure on the second semiconductor layer. The second semiconductor layer includes a modified region and an unmodified region surrounding the modified region. The electrode structure includes a first extension and a second extension physically separated from each other. The first extension and the second extension do not overlap the unmodified region in a vertical direction.

Description

Technical Field

[0001] This invention relates to a semiconductor element, and more particularly to a semiconductor photosensitive element. Background Technology

[0002] Semiconductor components are widely used in daily life. III-V compound semiconductors (such as GaP, InGaAs, or GaN) possess excellent optoelectronic properties and can be used in integrated circuits (ICs), light-emitting diodes (LEDs), laser diodes, solar cells (PVCs), or photodiodes. LEDs convert electrical energy into light, serving as a widely used light source in displays, lighting, and communications. Photodiodes convert light into electricity and are widely used in ambient light sensing, communications, ranging, security, and physiological monitoring. As electronic devices become increasingly complex, photodiodes are trending towards miniaturization, leading to ever-increasing demands for sensing capabilities and noise reduction. Summary of the Invention

[0003] This invention provides a semiconductor device comprising: a first semiconductor layer; a second semiconductor layer; an active region located between the first and second semiconductor layers; and an electrode structure located on the second semiconductor layer. The second semiconductor layer includes a modified region and an unmodified region surrounding the modified region. The electrode structure includes a first extension and a second extension physically separated from each other, and the first and second extensions do not overlap with the unmodified region in the vertical direction.

[0004] The present invention also provides a packaging module. The packaging module includes a carrier board, a light-emitting element, and a semiconductor element. Attached Figure Description

[0005] Figure 1A This is a top view schematic diagram of a semiconductor element according to an embodiment of the present invention;

[0006] Figure 1B for Figure 1A A schematic cross-sectional view of a semiconductor device along section line A-A';

[0007] Figure 1C for Figure 1A A schematic cross-sectional view of a semiconductor device along section line B-B';

[0008] Figure 1D for Figure 1A A magnified view of a portion of region C in the middle;

[0009] Figure 2A This is a top view schematic diagram of a semiconductor element according to another embodiment of the present invention;

[0010] Figure 2BThis is a top view schematic diagram of a semiconductor element according to another embodiment of the present invention;

[0011] Figure 3 This is a schematic diagram of the packaging module according to an embodiment of the present invention.

[0012] Symbol Explanation

[0013] 100, 101, 102: Semiconductor components

[0014] 100E: First Boundary

[0015] 10: Base

[0016] 20: Semiconductor stack

[0017] 201: Modified Zone

[0018] 202: Unmodified area

[0019] 203: Second Boundary

[0020] 203a, 203b, 203c, 203d: Side sections

[0021] 203e: First corner

[0022] 21: First semiconductor layer

[0023] 22: Second semiconductor layer

[0024] 23: Active Zone

[0025] 25: Barrier layer

[0026] 30: First electrode structure

[0027] 31: Solder pad section

[0028] 311: Main body

[0029] 312: First bend corner

[0030] 32: Extension

[0031] 321: First extension

[0032] 321a: First end

[0033] 321b: Second end

[0034] 321c: First connecting part

[0035] 322: Second extension

[0036] 322a: Third end

[0037] 322b: Fourth end

[0038] 322c: Second connecting part

[0039] 39: Second electrode structure

[0040] 40: Protective layer

[0041] 41: Opening

[0042] 42: Inner wall

[0043] 42a, 42b, 42c, 42d: Edges

[0044] 42e: Second corner

[0045] 50: Contact Structure

[0046] 51: First contact part

[0047] 52: Second contact part

[0048] 60: Anti-reflective layer

[0049] 61: Through hole

[0050] 70: Filtering Structure

[0051] 200: Light-emitting element

[0052] 210: First connecting electrode

[0053] 220: Second connecting electrode

[0054] 300: Image sensor

[0055] 310: Third connecting electrode

[0056] 320: Fourth connecting electrode

[0057] 400: Carrier board

[0058] 401: First Groove

[0059] 402: Second groove

[0060] 410a, 410b: First circuit structure

[0061] 420a, 420b: Second circuit structure

[0062] 500: Package structure

[0063] 1000: Package module

[0064] 2000: Test Item

[0065] C: Area

[0066] D1: First Distance

[0067] D2: Second Distance

[0068] E1, E2, E3, E4: Edges

[0069] G: Interval

[0070] G1: First Interval

[0071] G2: Second Interval

[0072] GC: Geometric Center

[0073] L: Length

[0074] W: Width

[0075] L1, L2: Tangents

[0076] P1, P2, P3, P4: Points

[0077] T1: First thickness

[0078] T2: Second thickness

[0079] T3: Third Thickness

[0080] c1, c2: Curve segments

[0081] d1, d2: Diameter

[0082] s1, s2, s3, s4: Line segments Detailed Implementation

[0083] To provide a more detailed and complete description of the present invention, the invention will be described in detail below with reference to the accompanying drawings. It should be noted that the following illustrations are for demonstrating semiconductor elements of the present invention and are not intended to limit the invention to these embodiments. In the drawings and descriptions, similar or identical components will be described using similar or identical reference numerals, and unless otherwise specified, the shapes or dimensions of the components in the drawings are merely illustrative and are not actually limited thereto. In the embodiments of the present invention, unless otherwise stated, the term "horizontal" refers to any value or vector along the X-axis, Y-axis, or in the XY plane, while the term "vertical" refers to any value or vector along the Z-axis.

[0084] Furthermore, unless otherwise specified, descriptions such as "the first layer (or structure) is located on the second layer (or structure)" may include embodiments where the first layer (or structure) and the second layer (or structure) are in direct contact, or embodiments where the first layer (or structure) and the second layer (or structure) have other structures between them and are not in direct contact. Additionally, it should be understood that the positional relationships of the layers (or structures) may change depending on the viewing orientation.

[0085] Viewed from above, Figure 1A This diagram shows a top view of a semiconductor element 100 according to an embodiment of the present invention. Figure 1B and Figure 1C Semiconductor element 100 Figure 1A Cross-sectional schematic diagrams of section lines A-A' and B-B'. Figure 1D for Figure 1A A magnified view of region C in the middle.

[0086] The semiconductor element 100 can be of any shape, such as a polygon, circle, or irregular shape. The semiconductor element 100 has a first boundary 100E, such as... Figure 1A As shown, in this embodiment, the first boundary 100E is a rectangle and includes four sides E1, E2, E3, and E4. Sides E1 and E3 connect to sides E2 and E4. In this embodiment, sides E1 and E3 are parallel to the X-axis, and sides E2 and E4 are parallel to the Y-axis. In some embodiments, the lengths of the four sides E1, E2, E3, and E4 may be equal to or less than 400 μm.

[0087] Semiconductor element 100 can be a light-emitting diode, a laser diode, or a photodiode to perform electro-optical conversion or photoelectric conversion. For example... Figures 1A to 1C As shown, the semiconductor device 100 includes a semiconductor stack 20, a first electrode structure 30, and a second electrode structure 39. The first electrode structure 30 and the second electrode structure 39 are both connected to the semiconductor stack 20 and are separated from each other. In some embodiments, the semiconductor device 100 may selectively include a substrate 10, a protective layer 40, a contact structure 50, an anti-reflective layer 60, and / or a filter structure 70.

[0088] The substrate 10 is located beneath the semiconductor stack 20 and provides mechanical strength to support the semiconductor element 100. In some embodiments, the substrate 10 may be a growth substrate for growing the semiconductor stack 20. In other embodiments, the substrate 10 may be a support substrate for supporting the semiconductor stack 20, and the semiconductor stack 20 may be connected to the substrate 10 via a bonding structure (not shown).

[0089] The semiconductor stack 20 includes a first semiconductor layer 21 adjacent to the substrate 10, a second semiconductor layer 22 away from the substrate 10, and an active region 23 located between the first semiconductor layer 21 and the second semiconductor layer 22. The first semiconductor layer 21 and the second semiconductor layer 22 may have the same or different materials, and the active region 23 may have a material different from the first semiconductor layer 21 and / or the second semiconductor layer 22. The first semiconductor layer 21 has a first dopant, and the second semiconductor layer 22 has a second dopant. The first dopant and the second dopant may be the same or different, and the conductivity types of the first semiconductor layer 21 and the second semiconductor layer 22 may be the same or different. In some embodiments, the first semiconductor layer 21 with the first dopant has a first conductivity type, while the second semiconductor layer 22 with the second dopant has a second conductivity type opposite to the first conductivity type. The first conductivity type and the second conductivity type may be n-type and p-type, or p-type and n-type, respectively. The first dopant in the first semiconductor layer 21 has a first doping concentration, and the second dopant in the second semiconductor layer 22 has a second doping concentration. The first doping concentration may be greater than, less than, or equal to the second doping concentration. In some embodiments, the first doping concentration and / or the second doping concentration may each be between 10 and 10. 17 / cm 3 Up to 5×10 18 / cm 3 between.

[0090] The active region 23 may comprise a single layer or multiple layers, and may be undoped or intentionally doped. The aforementioned "intentionally doped" refers to the situation where dopants naturally enter the active region 23; for example, the active region 23 may contain a small amount of a first dopant and / or a second dopant. Generally, for undoped or intentionally doped active regions 23, the doping concentration of the first dopant and / or the second dopant is less than 10⁻⁶. 16 / cm 3 .

[0091] like Figures 1A to 1CAs shown, the first electrode structure 30 is disposed on the upper surface of the second semiconductor layer 22 and forms an electrical connection with the second semiconductor layer 22. The second electrode structure 39 is disposed on the lower surface of the substrate 10 and forms an electrical connection with the first semiconductor layer 21 through the substrate 10. When the semiconductor element 100 is a photodiode, the upper surface of the second semiconductor layer 22 can be a light-receiving surface. Incident light enters the semiconductor element 100 through the upper surface of the second semiconductor layer 22 and is absorbed by the active region 23 to generate electrons and holes. By applying a bias voltage to the semiconductor stack 20, electrons and holes (or holes and electrons) move towards the first semiconductor layer 21 and the modified region 201, respectively, and are collected by the first electrode structure 30 and the second electrode structure 39 to form a photocurrent. Therefore, the semiconductor element 100 can output electrical signals (photocurrent) to external circuits or devices through the first electrode structure 30 and the second electrode structure 39.

[0092] The first electrode structure 30 and / or the second electrode structure 39 may comprise a single layer or multiple layers. The first electrode structure 30 and the second electrode structure 39 may comprise metals, such as aluminum (Al), chromium (Cr), copper (Cu), tin (Sn), gold (Au), nickel (Ni), titanium (Ti), platinum (Pt), lead (Pb), zinc (Zn), cadmium (Cd), antimony (Sb), cobalt (Co), beryllium (Be), germanium (Ge), or alloys of the above metals, such as GeAuNi, BeAu, GeAu, or ZnAu.

[0093] like Figures 1A to 1B As shown, the semiconductor stack 20 may further include a modified region 201 and an unmodified region 202, with the unmodified region 202 surrounding the modified region 201. Specifically, the modified region 201 is formed in the second semiconductor layer 22 by adding a third dopant to a specific region of the second semiconductor layer 22, and the third dopant is different from the first and second dopants. The modified region 201 has a second boundary 203, and the region outside the second boundary 203 that does not contain the third dopant is the unmodified region 202. The modified region 201 may be formed by a diffusion fabrication process or an ion implantation fabrication process. In some embodiments, the modified region 201 may further extend into the active region 23. Figure 1B and Figure 1C As shown, a third dopant can be diffused into a portion of the active region 23 adjacent to the second semiconductor layer 22, so that the modified region 201 extends into the active region 23, thereby reducing dark current and improving the signal-to-noise ratio (S / N) of the semiconductor device 100.

[0094] When the semiconductor stack 20 includes the modified region 201, the first electrode structure 30 forms an electrical connection with the modified region 201. The first semiconductor layer 21 with the first dopant and the second semiconductor layer 22 with the second dopant both have a first conductivity type, while the modified region 201 with the third dopant has a second conductivity type, thus forming a pin structure in the semiconductor stack 20. More specifically, in the second semiconductor layer 22, the modified region 201 includes both the second and third dopants, while the unmodified region 202 includes the second dopant but not the third dopant. In the modified region 201, the third dopant has a third doping concentration greater than the second doping concentration, causing the modified region 201 to have a second conductivity type, while the unmodified region 202, which only contains the second dopant, has a first conductivity type. In some embodiments, the third doping concentration may be between 2 × 10⁻⁶. 17 / cm 3 Up to 5×10 19 / cm 3 between.

[0095] like Figure 1A As shown, the modified region 201 has a width W along the X-axis and a length L along the Y-axis. The width W and the length L may be the same or different. In some embodiments, the width W and the length L may be between 200 μm and 350 μm, respectively. The second boundary 203 of the modified region 201 is located within the first boundary 100E of the semiconductor element 100 and includes four side portions 203a, 203b, 203c, 203d and a first corner portion 203e. The four side portions 203a, 203b, 203c, 203d correspond to the four sides E1, E2, E3, and E4 of the first boundary 100E, respectively, and the first corner portion 203e connects the side portions 203a and 203b. In some embodiments, the four side portions 203a, 203b, 203c, 203d are separated from the corresponding four edges E1, E2, E3, E4 by a gap G, which may be between 20 μm and 30 μm. The modified region 201 has a first area A1. In some embodiments, the first area A1 may be between 20000 μm. 2 Up to 63000 μm 2 between.

[0096] The active region 23 has a first band gap Eg1 and a first cutoff wavelength λ1, and is capable of absorbing light with a wavelength less than or equal to the first cutoff wavelength λ1. The second semiconductor layer 22 has a second band gap Eg2 and a second cutoff wavelength λ2, and is capable of absorbing light with a wavelength less than or equal to the second cutoff wavelength λ2. For example, when the first bandgap Eg1 (or the second bandgap Eg2) is 3.1 eV, the active region 23 (or the second semiconductor layer 22) can absorb light with wavelengths below about 400 nm (e.g., ultraviolet light); when the first bandgap Eg1 (or the second bandgap Eg2) is 2.14 eV, the active region 23 (or the second semiconductor layer 22) can absorb light with wavelengths below about 580 nm (e.g., ultraviolet light, blue light, and green light); when the first bandgap Eg1 (or the second bandgap Eg2) is 0.73 eV, the active region 23 (or the second semiconductor layer 22) can absorb light with wavelengths below about 1700 nm (e.g., ultraviolet light, blue light, green light, red light, and infrared light).

[0097] In some embodiments, the second bandgap Eg2 of the second semiconductor layer 22 may be greater than the first bandgap Eg1 of the active region 23, and the second cutoff wavelength λ2 of the second semiconductor layer 22 may be less than the first cutoff wavelength λ1 of the active region 23. Assuming the incident light contains a first component with a wavelength less than the second cutoff wavelength λ2 and a second component with a wavelength between the second cutoff wavelength λ2 and the first cutoff wavelength λ1, the second semiconductor layer 22 may absorb the first component of the incident light, while the active region 23 may absorb both the first and second components of the incident light. When incident light enters the semiconductor stack 20 from the light-receiving surface, the first component of the incident light is absorbed by the second semiconductor layer 22, while the second component of the incident light penetrates the second semiconductor layer 22 and is absorbed by the active region 23, generating a photocurrent. In other words, by making the second bandgap Eg2 larger than the first bandgap Eg1, the photocurrent generated by the semiconductor device 100 mainly corresponds to the portion of the incident light with wavelengths between the first cutoff wavelength λ1 and the second cutoff wavelength λ2. This range can be called the target wavelength range of the semiconductor device 100, and the target wavelength range can be adjusted by combining the first bandgap Eg1 and the second bandgap Eg2. For example, when the semiconductor device 100 is designed to detect light with wavelengths between 1300 nm and 1600 nm, the materials of the active region 23 and the second semiconductor layer 22 need to be selected such that the first bandgap Eg1 is no greater than 0.77 eV (corresponding to the first cutoff wavelength λ1 being approximately 1600 nm), and the second bandgap Eg2 is no greater than 0.96 eV (corresponding to the second cutoff wavelength λ2 being approximately 1300 nm). In some embodiments, light with wavelengths outside the target wavelength range (the first component of the incident light) may still enter the active region 23 and form a photocurrent; this photocurrent can be considered as noise.

[0098] In a vertical direction (along the Z-axis), the active region 23 and the second semiconductor layer 22 each have a first thickness T1 and a second thickness T2, respectively. In some embodiments, the first thickness T1 may be between 1000 nm and 4000 nm to obtain a sufficiently identifiable electrical signal (photocurrent). In some embodiments, the second thickness T2 may be greater than or equal to 500 nm to reduce noise generated by light in non-target wavelength ranges, and the second thickness T2 may be less than 2000 nm to facilitate the thinning of the semiconductor device 100.

[0099] The semiconductor stack 20 may optionally include a barrier layer 25. The barrier layer 25 is located between the second semiconductor layer 22 and the active region 23, and can block electrons or holes generated by light absorption by the second semiconductor layer 22 from entering the active region 23, thereby suppressing noise generation. In some embodiments, the barrier layer 25 has a third bandgap Eg3 that is larger than the second bandgap Eg2 of the second semiconductor layer 22 and the first bandgap Eg1 of the active region 23, to block electrons or holes from the second semiconductor layer 22. (Refer to...) Figure 1B and Figure 1C In embodiments where the semiconductor stack 20 includes a barrier layer 25, a modified region 201 is formed within the second semiconductor layer 22 and may selectively extend to the barrier layer 25 and / or the active region 23. In the vertical direction (Z-axis), the barrier layer 25 has a third thickness T3 that is less than the first thickness T1 and / or the second thickness T2. In some embodiments, the third thickness T3 may be between 10 nm and 500 nm.

[0100] The substrate 10, the first semiconductor layer 21, the second semiconductor layer 22, the active region 23, and the barrier layer 25 may each comprise a III-V compound semiconductor, such as GaAs, InGaAs, AlGaAs, AlInGaAs, AlInAs, GaP, InP, InGaP, AlInP, AlGaInP, GaN, InGaN, AlGaN, AlInGaN, AlAsSb, InGaAsP, InGaAsN, or AlGaAsP. The first dopant, the second dopant, and the third dopant may be zinc (Zn), beryllium (Be), magnesium (Mg), carbon (C), silicon (Si), germanium (Ge), tin (Sn), sulfur (S), selenium (Se), or tellurium (Te).

[0101] Reference Figures 1A to 1C The protective layer 40 is disposed on the second semiconductor layer 22, and the protective layer 40 is transparent to incident light. For example... Figure 1AAs shown, the protective layer 40 includes an opening 41 and an inner wall 42 defining the opening 41. The opening 41 exposes a portion of the modified region 201, and both the opening 41 and the inner wall 42 are located within the second boundary 203 of the modified region 201. In other words, the protective layer 40 covers a portion of the modified region 201 and the second boundary 203 to further reduce dark current. Figure 1A As shown, the inner wall 42 of the protective layer 40 has four edge portions 42a, 42b, 42c, 42d and a second corner portion 42e. The four edge portions 42a, 42b, 42c, 42d correspond to the four side portions 203a, 203b, 203c, 203d of the second boundary 203, respectively. The second corner portion 42e connects the edge portions 42a and 42b and corresponds to the first corner portion 203e of the second boundary 203.

[0102] The protective layer 40 may comprise a single layer or multiple layers. The protective layer 40 may comprise an insulating material, such as tantalum oxide (TaO). x ), aluminum oxide (AlO) x ), silicon dioxide (SiO) x Titanium oxide (TiO) x ), silicon nitride (SiN) x ), silicon oxynitride (SiO) x N y Niobium pentoxide (Nb2O5) or spin-coated glass (SOG).

[0103] The first electrode structure 30 is disposed on the protective layer 40 and the second semiconductor layer 22. (Refer to...) Figures 1A to 1C The first electrode structure 30 includes a pad portion 31 disposed on the protective layer 40, and an extension portion 32 connected to the pad portion 31. The extension portion 32 is disposed on and connected to the modified region 201, thereby forming an electrical connection between the first electrode structure 30 and the modified region 201. The extension portion 32 includes a first extension segment 321 and a second extension segment 322 that are physically separated from each other, and both the first extension segment 321 and the second extension segment 322 are connected to the pad portion 31. Figures 1A to 1C As shown, in the vertical direction (along the Z-axis), the first extension segment 321 and the second extension segment 322 overlap with the modified region 201 but do not overlap with the unmodified region 202. In other words, the first extension segment 321 and the second extension segment 322 do not contact the unmodified region 202. In other embodiments, the extension 32 may optionally include more extension segments, such as a third extension segment and / or a fourth extension segment (not shown).

[0104] Reference Figure 1AThe first extension 321 includes a first end 321a connecting to the solder pad portion 31, a second end 321b away from the solder pad portion 31, and a first connecting portion 321c connecting the first end 321a and the second end 321b. The second extension 322 includes a third end 322a connecting to the solder pad portion 31, a fourth end 322b away from the solder pad portion 31, and a second connecting portion 322c connecting the third end 322a and the fourth end 322b. The first end 321a and the third end 322a are located on the protective layer 40 and do not contact the modified region 201. The second end 321b, the first connecting portion 321c, the fourth end 322b, and the second connecting portion 322c contact the modified region 201 through the opening 41. Figure 1A As shown, in some embodiments, the second end 321b of the first extension 321 and the fourth end 322b of the second extension 322 may be circular to avoid tip discharge.

[0105] In some embodiments, the width of the second end 321b is greater than or equal to the width of the first end 321a, and the width of the fourth end 322b is greater than or equal to the width of the third end 322a. The first connecting portion 321c and / or the second connecting portion 322c may be straight or curved. When the first connecting portion 321c and the second connecting portion 322c are straight, the first extension segment 321 and the second extension segment 322 may extend along a first horizontal direction and a second horizontal direction different from the first horizontal direction, respectively. For example, the first horizontal direction and the second horizontal direction may correspond to the Y-axis and the X-axis, or the X-axis and the Y-axis, respectively.

[0106] When the top surface of the second semiconductor layer 22 is the light-receiving surface of the semiconductor element 100, the extension 32 disposed on the modified region 201 will form a shield, thereby reducing the responsivity of the semiconductor element 100. Viewed from above, the extension 32 has a second area A2 (i.e., the total area of ​​the first extension segment 321 and the second extension segment 322), and the difference between the first area A1 and the second area A2 of the modified region 201 is the effective light-absorbing area of ​​the semiconductor element 100. For a typical photodiode, the extension 32 of the first electrode structure 30 is usually designed as a ring structure (not shown) to ensure uniformity of photocurrent collection. In embodiments of the present invention, by designing the extension 32 as two or more mutually separated extension segments, the second area A2 can be reduced while maintaining uniformity of photocurrent collection, thereby increasing the effective light-absorbing area of ​​the semiconductor element 100 and improving the responsivity. In some embodiments, the second area A2 is between 6% and 20% of the first area A1. A value below 6% will reduce the uniformity of photocurrent collection, while a value above 20% will reduce the susceptibility of the semiconductor device.

[0107] The first extension segment 321 and the second extension segment 322 are separated from the four side portions 203a, 203b, 203c, and 203d of the second boundary 203. For example... Figure 1A and Figure 1B As shown, the shortest distance between the first extension segment 321 and the four side portions 203a, 203b, 203c, and 203d is the first distance D1, and the shortest distance between the second extension segment 322 and the four side portions 203a, 203b, 203c, and 203d is the second distance D2. The first distance D1 and the second distance D2 can be the same or different. Figure 1A As shown, the first distance D1 is located between the second end 321b of the first extension 321 and the side portion 203b closest to the first extension 321, and the second distance D2 is located between the fourth end 322b of the second extension 322 and the side portion 203a closest to the second extension 322. In some embodiments, the first distance D1 and / or the second distance D2 may be between 25 μm and 65 μm. In some embodiments, the ratio of the first distance D1 to the width W and / or the ratio of the second distance D2 to the length L may be between 0.07 and 0.26, for example, 0.1, 0.15, or 0.2, to avoid reducing the uniformity of photocurrent acquisition.

[0108] Reference Figure 1A , Figure 1C and Figure 1D The pad portion 31 is located near the corner between edge E1 and edge E2. The pad portion 31 includes a main body portion 311 and a first curved portion 312. The main body portion 311 is circular and has a first diameter d1 parallel to the X-axis and a second diameter d2 parallel to the Y-axis. The first diameter d1 and the second diameter d2 intersect the circumference of the main body portion 311 at points P1, P3, P2, and P4, thus defining four arc segments P1-P2, P2-P3, P3-P4, and P1-P4. The first curved portion 312 extends outward from the arc segment P1-P2 and is defined by the tangent L1 at point P1, the tangent L2 at point P2, and the arc segment P1-P2. Therefore, the outline of the pad portion 31 includes at least two straight line segments s1 and s2 and a first curved segment c1. The first straight segment s1 intersects with the second straight segment s2. A first curved segment c1 connects the two straight segments s1 and s2, and the first curved segment c1 is part of the circumference of the main body 311, such as arc segment P3-P4, arc segment P1-P4, arc segment P2-P3, or a combination of these arc segments. In some embodiments, both the first extension segment 321 and the second extension segment 322 are connected to the first curved segment c1 of the solder pad portion 31. The intersection between the first straight segment s1 and the second straight segment s2 can be an acute angle (not shown) or an arc (e.g., ...). Figure 1A and Figure 1D (as shown) to avoid tip discharge. In some embodiments, the first diameter d1 and the second diameter d2 may be between 80 μm and 100 μm.

[0109] In embodiments of the present invention, the main body portion 311 is used for wire bonding, while the first bend portion 312 can be used to increase the bonding strength between the solder pad portion 31 and the protective layer 40, thereby improving the reliability of the semiconductor device 100. In some embodiments, the solder pad portion 31 may selectively include a second bend portion (not shown) extending outward from arc segment P1-P4 and / or a third bend portion (not shown) extending outward from arc segment P2-P3, to further improve the bonding strength.

[0110] like Figure 1A and Figure 1D As shown, in this embodiment, the solder pad 31 is located on the unmodified region 202 and does not overlap with the modified region 201 in the vertical direction (along the Z-axis) to avoid obscuring the modified region 201. In other embodiments, since the third dopant may cause horizontal diffusion, the modified region 201 may extend below the solder pad 31 and partially overlap with the solder pad 31 in the vertical direction; that is, the first corner portion 203e may be located below the solder pad 31 (not shown). The opening 41 and inner wall 42 of the protective layer 40 do not overlap with the solder pad 31 in the vertical direction to prevent the solder pad 31 from directly contacting the modified region 201.

[0111] like Figure 1A and Figure 1D As shown, the first corner portion 203e of the second boundary 203 corresponds to a portion of the first curved segment c1 of the pad portion 31. The second corner portion 42e of the inner wall 42 may be configured to correspond to a portion of the first curved segment c1 of the pad portion 31 and be separate from the first curved segment c1. Specifically, the second corner portion 42e includes a second curved segment c2 corresponding to the first curved segment c1, and may optionally include a third straight segment s3 and a fourth straight segment s4 to connect the second curved segment c2 to the edge portion 42a and the edge portion 42b, respectively. In some embodiments, the second curved segment c2 and the first curved segment c1 may be concentric arcs, and the central angle of the second curved segment c2 may be less than or equal to the central angle of the first curved segment c1. The shortest distance between the first curved segment c1 and the second curved segment c2 is a first interval G1. In some embodiments, the first interval G1 is between 5 μm and 20 μm. The shortest distance between the first curve segment c1 and the third straight line segment s3 (along the X-axis) or the shortest distance between the first curve segment c1 and the fourth straight line segment s4 (along the Y-axis) is the second interval G2. The second interval G2 can be greater than or equal to the first interval G1.

[0112] Reference Figures 1A to 1CA contact structure 50 is disposed between the semiconductor stack 20 and the first electrode structure 30 to reduce the operating voltage of the semiconductor device 100. More specifically, the contact structure 50 is disposed on the modified region 201 but does not contact the unmodified region 202, and the contact structure 50 includes a first contact portion 51 and a second contact portion 52. The first contact portion 51 is disposed between the modified region 201 and the first extension 321 and is covered by the first extension 321, and the second contact portion 52 is disposed between the modified region 201 and the second extension 322 and is covered by the second extension 322. In this embodiment, the first contact portion 51 and the second contact portion 52 are located within the opening 41 of the protective layer 40 and do not contact the protective layer 40. In other embodiments, the first contact portion 51 and the second contact portion 52 may extend below the protective layer 40 and contact the protective layer 40 (not shown). Figure 1A As shown, the width of the first contact portion 51 is smaller than the width of the first extension 321, and the width of the second contact portion 52 is smaller than the width of the second extension 322.

[0113] The contact structure 50 and the modified region 201 may have the same conductivity type. In some embodiments, the contact structure 50 has the same third dopant as the modified region 201, and the third dopant in the contact structure 50 has a fourth doping concentration. In some embodiments, the fourth doping concentration may be between 8 × 10⁻⁶ and 10⁻⁶. 17 / cm 3 Up to 5×10 19 / cm 3 In some embodiments, the contact structure 50 is undoped or intentionally doped, meaning that the doping concentration of all dopants within the contact structure 50 is less than 10. 16 / cm 3 In some embodiments, the thickness of the contact structure 50 in the vertical direction may be between 30 nm and 150 nm. The contact structure 50 may comprise a III-V compound semiconductor, such as GaAs, InGaAs, or GaP.

[0114] Reference Figure 1B and Figure 1C An anti-reflection layer 60 is disposed on the second semiconductor layer 22, the protective layer 40, and the first electrode structure 30, and contacts the modified region 201 through the opening 41 of the protective layer 40. The anti-reflection layer 60 can reduce the reflection of incident light, thereby improving the light absorption of the semiconductor device 100 and outputting more photocurrent. The anti-reflection layer 60 covering the modified region 201 also has a passivation effect, which can reduce the dark current of the semiconductor device 100 and improve reliability.

[0115] The antireflective layer 60 may comprise a single layer or multiple layers, and its thickness and material can be selected according to the target wavelength range. The antireflective layer 60 may include an insulating material, such as tantalum oxide (TaO). x), aluminum oxide (AlO) x ), silicon dioxide (SiO) x Titanium oxide (TiO) x ), silicon nitride (SiN) x ), silicon oxynitride (SiO) x N y Niobium pentoxide (Nb2O5) or spin-coated glass (SOG).

[0116] A filter structure 70 can be disposed on the second semiconductor layer 22, the protective layer 40, and the first electrode structure 30 to select the wavelength of incident light entering the semiconductor element 100. For example, the filter structure 70 can be designed to block a first component of the incident light to further reduce noise; or it can further block a portion of a second component of the incident light to narrow the wavelength range of light entering the active region 23 and improve detection accuracy. In this embodiment, the filter structure 70 is disposed on the antireflective layer 60, and a via 61 is formed in the antireflective layer 60 and the filter structure 70. Figure 1A and Figure 1C As shown, the through-hole 61 is provided corresponding to the pad portion 31 and penetrates the anti-reflective layer 60 and the filter structure 70 to expose the connection between the pad portion 31 and the external circuit. In some embodiments, the through-hole 61 has an area smaller than that of the pad portion 31.

[0117] The filter structure 70 may comprise a single-layer structure or multiple layers. For example, the filter structure 70 may be a multilayer dielectric thin film (e.g., TiO2) formed by alternating stacks of multiple high-refractive-index layers and multiple low-refractive-index layers. x / SiO x or SiO x / SiN x (a combination of), or polymers with a specific absorption spectrum.

[0118] Figure 2A This is a top view schematic diagram of a semiconductor element 101 according to another embodiment of the present invention. Semiconductor element 101 has a similar structure to semiconductor element 100, the main difference being that the first extension 321 and / or the second extension 322 of the first electrode structure 30 in semiconductor element 101 have gradually decreasing widths. More specifically, the width of the first extension 321 gradually decreases from the first end 321a to the second end 321b, and the width of the second extension 322 also gradually decreases from the third end 322a to the fourth end 322b. Therefore, during operation of semiconductor element 101, the current density at the first end 321a and / or the third end 322a will not be excessively high, thus improving the reliability of semiconductor element 101. In some embodiments, the connection between the first end 321a and the pad portion 31 and / or the connection between the third end 322a and the pad portion 31 may be arc-shaped rather than acute-angled to avoid tip discharge. Figure 2AAs shown, the first contact portion 51 (and / or the second contact portion 52) may also be formed with a gradient width corresponding to the first extension portion 321 (and / or the second extension portion 322). The positions, relative relationships, material compositions, and structural variations of other layers or structures in the semiconductor element 101 have been described in the previous embodiments and will not be repeated here.

[0119] Figure 2B This is a top view schematic diagram of a semiconductor element 102 according to another embodiment of the present invention. The semiconductor element 102 has a similar structure to the aforementioned semiconductor element 101, and the first extension 321 and the second extension 322 of the semiconductor element 102 are arc-shaped. Figure 2B As shown, the modified region 201 has a geometric center GC. The second end 321b of the first extension 321 is closer to the geometric center GC than the first end 321a, and the first connection portion 321c connecting the first end 321a and the second end 321b is curved. Similarly, the fourth end 322b of the second extension 322 is closer to the geometric center GC than the third end 322a, and the second connection portion 322c connecting the third end 322a and the fourth end 322b is curved. Accordingly, the first electrode structure 30 can form an open arc-shaped structure surrounding the geometric center GC to further improve the uniformity and responsivity of the photocurrent collection of the semiconductor element 102. In some embodiments, the distance between the geometric center GC and the second end 321b and the distance between the geometric center GC and the fourth end 322b can be substantially the same. The positions, relative relationships, material compositions, and structural variations of other layers or structures in the semiconductor element 102 have been described in previous embodiments and will not be repeated here.

[0120] Figure 3This is a schematic diagram of the structure of a packaging module 1000 according to some embodiments of the present invention. The packaging module 1000 includes a light-emitting element 200, a photosensitive element 300, a carrier plate 400, and a packaging structure 500. The carrier plate 400 includes a first groove 401 and a second groove 402. The light-emitting element 200 and the photosensitive element 300 are respectively located in the first groove 401 and the second groove 402. The packaging structure 500 is disposed in the first groove 401 and the second groove 402 and covers the light-emitting element 200 and the photosensitive element 300. The photosensitive element 300 may be the semiconductor element 100, 101, 102 or a variation thereof described in the foregoing embodiments, and includes a third connecting electrode 310 and a fourth connecting electrode 320 (i.e., the first electrode structure 30 and the second electrode structure 39 of the aforementioned semiconductor element 100, 101, or 102). The light-emitting element 200 includes a first connecting electrode 210 and a second connecting electrode 220, and further includes an active layer to emit light of a specific wavelength. In some embodiments, the light-emitting element 200 may emit infrared light with a peak wavelength between 800 nm and 2000 nm, such as infrared light with wavelengths of 810 nm, 850 nm, 910 nm, 940 nm, 1050 nm, 1070 nm, 1100 nm, 1200 nm, 1300 nm, 1400 nm, 1500 nm, 1600 nm, 1700 nm, 1800 nm, or 1900 nm. The wavelength of the light emitted by the light-emitting element 200 is within the target wavelength range of the photosensitive element 300. The light-emitting element 200 and the photosensitive element 300 may contain the same material, for example, both the light-emitting element 200 and the photosensitive element 300 may contain materials such as AlInGaAs, AlGaInP, InGaAs, and / or InGaAsP.

[0121] The carrier plate 400 includes a first circuit structure 410a, 410b that is electrically connected to the first connection electrode 210 and the second connection electrode 220 of the light-emitting element 200, respectively, to drive the light-emitting element 200 to emit light. The carrier plate 400 also includes a second circuit structure 420a, 420b that is electrically connected to the third connection electrode 310 and the fourth connection electrode 320 of the photosensitive element 300, respectively, to receive the electrical signals generated by the photosensitive element 300.

[0122] The carrier 400 can be a package submount or a printed circuit board (PCB). The first connecting electrode 210, the second connecting electrode 220, the third connecting electrode 310, the fourth connecting electrode 320, the first circuit structures 410a, 410b, and the second circuit structures 420a, 420b can comprise a single layer or multiple layers, and can contain nickel (Ni), titanium (Ti), platinum (Pt), palladium (Pd), silver (Ag), gold (Au), aluminum (Al), or copper (Cu). The package structure 500 can contain organic polymer materials or inorganic dielectric materials, such as epoxy resin or silicone.

[0123] The packaged module 1000 can be integrated into mobile devices and can function as a proximity sensor, structured light scanner, or biosensor. Figure 3 An embodiment of applying the encapsulation module 1000 to a proximity sensor is disclosed. When a mobile device containing the encapsulation module 1000 approaches an object under test 2000, light of a specific wavelength emitted by the light-emitting element 200 illuminates the object under test 2000 and is reflected to the photosensitive element 300, causing the photosensitive element 300 to generate an electrical signal to sense the presence of the object under test 2000 and trigger an action, such as turning the screen of the mobile device on or off accordingly.

[0124] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. All equivalent variations and modifications made in accordance with the shape, structure, features and spirit described in the claims of the present invention should be included within the scope of the claims of the present invention.

Claims

1. A semiconductor element comprising: First semiconductor layer; A second semiconductor layer is located on the first semiconductor layer and includes a modified region and an unmodified region surrounding the modified region, wherein the modified region has a boundary; The active region is located between the first semiconductor layer and the second semiconductor layer; and The electrode structure is located on the second semiconductor layer and includes a first extension and a second extension that are physically separated from each other. in, The first extension and the second extension do not overlap with the unmodified region in the vertical direction.

2. The semiconductor device of claim 1, wherein the modified region has a first area, the total area of ​​the first extension and the second extension is a second area, and the ratio of the second area to the first area is between 6% and 20%.

3. The semiconductor device of claim 1, wherein the electrode structure further includes a pad portion, the first extension includes a first end connected to the pad portion and a second end remote from the pad portion, and the second end is connected to the modified region.

4. The semiconductor element of claim 3, wherein the first extension further includes a connecting portion connecting the first end and the second end, and the connecting portion is straight or curved.

5. The semiconductor device of claim 1, wherein the electrode structure further includes a pad portion, and the pad portion includes a first curved segment connecting the first extension portion and the second extension portion.

6. The semiconductor device of claim 5, wherein the pad portion does not overlap with the modified region in the vertical direction, and the boundary of the modified region includes a corner portion corresponding to the first curved segment of the pad portion.

7. The semiconductor device of claim 1, further comprising a contact structure located between the electrode structure and the modified region.

8. The semiconductor device of claim 7, wherein the contact structure includes a first contact portion corresponding to the first extension and a second contact portion corresponding to the second extension.

9. The semiconductor device of claim 7, wherein the electrode structure further includes a pad portion connecting the first extension and the second extension, and the contact structure is separate from the pad portion.

10. The semiconductor device of claim 1, wherein the width of the modified region is between 200 μm and 350 μm.

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