Multifunctional integrated extreme ultraviolet detection chip

Abstract

The application belongs to the technical field of semiconductor photoelectric devices, and particularly relates to a multifunctional integrated extreme ultraviolet detection chip. The chip is composed of a semiconductor substrate, an epitaxial layer and an extreme ultraviolet transparent electrode, and an array of functional layers is prepared on the transparent electrode. The array of functional layers is divided into three functional regions, i.e. a polarization detection region, a wide-spectrum extreme ultraviolet detection region and a narrow-spectrum extreme ultraviolet detection region. A nanowire grating with different orientation angles is arranged on the array element of the polarization detection region, which is used for synchronously obtaining polarization state information of incident extreme ultraviolet light; a light filter film with different spectral transmission characteristics is arranged on the array element of the wide-spectrum extreme ultraviolet detection region, which is used for synchronously obtaining wide-spectrum flux information; and different multilayer film structures are arranged on the array element of the narrow-spectrum extreme ultraviolet detection region, which is used for synchronously obtaining narrow-band spectral information. The application integrates the tests of three types of physical properties of extreme ultraviolet light, i.e. polarization, wide spectrum and narrow spectrum, into the same chip, simplifies the complexity of the extreme ultraviolet detection system, and improves optical efficiency and integration.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor optoelectronic device technology, specifically relating to a multifunctional integrated extreme ultraviolet detector chip. Background Technology

[0002] The extreme ultraviolet (EUV) band typically refers to electromagnetic radiation with wavelengths ranging from approximately 10 nm to 121 nm. It holds significant and irreplaceable value in cutting-edge technologies such as EUV lithography, space astronomical observation, plasma diagnostics, and synchrotron radiation beamline monitoring. In these applications, a complete EUV optical detection system often needs to perform multiple detection tasks simultaneously. Taking an EUV lithography system as an example, it requires not only real-time monitoring of the output power and dose of a 13.5 nm light source, but also analysis of the beam polarization state after transmission through multilayer mirrors to evaluate the polarization-maintaining performance and imaging contrast of the optical system. Furthermore, it may be necessary to perform spectral purity detection on narrowband radiation at specific wavelengths to eliminate interference from stray light in other bands. Similarly, space solar physics observations require the simultaneous acquisition of polarization information of coronal EUV radiation, broadband flux at different wavelengths, and fine spectral profiles of specific characteristic lines. The diverse detection needs of polarization measurement, broadband spectral monitoring, and narrowband spectral analysis must traditionally be handled by multiple completely independent functional modules within an EUV optical system.

[0003] Traditional solutions typically employ discrete polarization analysis modules, filtering and gating modules, and narrowband beam splitting modules, each with its own independent detector. This discrete system architecture introduces numerous complexities. Since each functional module requires independent optical alignment and mechanical adjustment, each detection channel necessitates precise optical path design and calibration, as well as the configuration of corresponding readout circuits, signal transmission lines, and data acquisition channels. This significantly increases the system's assembly difficulty and time cost. The overall size, weight, and power consumption of the detection system increase exponentially due to the multi-path parallel architecture, posing a significant engineering bottleneck for applications with stringent size and weight constraints, such as space payloads and integrated lithography equipment. Taking light source monitoring in an extreme ultraviolet lithography system as an example, to simultaneously acquire multi-dimensional information such as the polarization state, broadband power, and spectral purity of a 13.5 nm light source, traditional solutions require sequentially or in-beam configurations of multiple functional modules in the optical path, along with a corresponding number of independent detectors and their readout circuits. This firstly leads to the inherent optical flux loss caused by front-end beam splitting. In the extreme ultraviolet (EUV) band, the fabrication of efficient beam splitters is extremely difficult, and beam splitting itself inevitably causes a significant decrease in the photon number density of each branch, which is particularly detrimental to the detection of weak signals. Secondly, multiple optical interfaces between the functional layer and the detector generate significant reflection and absorption losses. EUV photons exhibit extremely strong absorption characteristics in all solid materials, making the interface loss effect more severe than in the visible light band, resulting in a significant reduction in the overall optical efficiency of the system. More critically, the inherent differences in optical path length and detector response characteristics between branches mean that the acquisition of polarization, broadband, and narrowband information lacks strict spatiotemporal synchronization. In studies involving rapid evolution processes, such as solar physics observations and fusion plasma diagnostics, this asynchrony constitutes a limitation to measurements.

[0004] Therefore, integrating polarization resolution, broadband response, and narrow-spectrum high-sensitivity detection into a single detector chip, and achieving simultaneous acquisition of multi-dimensional extreme ultraviolet (EUV) information within the same device through array design, has become an urgent need to simplify the architecture of EUV optical detection systems, reduce system complexity, and improve system integration and reliability. However, there are currently no reports of EUV array detectors that can achieve the above-mentioned multi-functional integration, and this technological gap urgently needs to be filled. Summary of the Invention

[0005] To address the problems existing in the prior art, this invention provides a multifunctional integrated extreme ultraviolet (EUV) detector chip. For the first time, the three main functions—polarization analysis, broadband filtering, and narrowband gating—which are traditionally dispersed across multiple independent branches, are integrated onto a single chip through array design and partitioned functional layer fabrication technology. Different detector array elements are arranged in an array, each undertaking one of the three detection tasks. The integrated logic of the functional layer and detector replaces the traditional separate logic of the functional layer and detector being connected in series. This architecture fundamentally avoids the light flux loss caused by front-end beam splitting and eliminates the cumulative loss of multi-level optical interfaces between the functional layer and the detector. This allows incident EUV photons to complete the entire process of functional modulation and photoelectric conversion within the same device, significantly improving the light utilization rate of the detection system. The array architecture of this invention allows the acquisition of polarization, broadband, and narrowband information to be spatially coexisting on the same chip and temporally responding both synchronously and independently. Each array element shares the same device structure, and its photoelectric response characteristics have intrinsic consistency, thus ensuring strict spatiotemporal synchronization of multidimensional EUV information acquisition. This characteristic is of key value for applications such as dynamic evolution of solar flares, transient radiation of laser plasma, and time-resolved monitoring of extreme ultraviolet lithography pulse sources, breaking through the bottleneck of lack of synchronization caused by the difference in optical path length of multiple branches and the discreteness of detectors in existing technologies.

[0006] To achieve the above objectives, the technical solution adopted by the present invention is as follows: The first aspect of this invention provides a multifunctional integrated extreme ultraviolet (EUV) detector chip, comprising: A multi-functional detection unit mounted on the extreme ultraviolet detector; The multifunctional detection unit includes nine detection elements arranged in a 3×3 array. The nine detector array elements are divided into three functional regions: polarization detection region, broadband extreme ultraviolet detection region and narrow spectrum extreme ultraviolet detection region, with each functional region containing three array elements; The three array elements of the polarization detection region are respectively equipped with nanowire grating structures with different orientation angles, which are used to synchronously acquire polarization state information of incident extreme ultraviolet light. The three array elements of the broadband extreme ultraviolet detection region are respectively equipped with filter films with different spectral transmission characteristics, which are used to simultaneously acquire broadband flux information of incident extreme ultraviolet light. The three array elements of the narrow-band extreme ultraviolet detection region are respectively equipped with multilayer film structures with different center wavelengths, which are used to simultaneously acquire narrow-band spectral information of incident extreme ultraviolet light.

[0007] The nine detector elements operate in parallel under the same time reference, enabling simultaneous detection of the polarization characteristics, broadband response characteristics, and narrow spectrum characteristics of incident extreme ultraviolet light.

[0008] Furthermore, the extreme ultraviolet detector has a pn junction or pin junction structure, and the semiconductor material used to fabricate the extreme ultraviolet detector is at least one of silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), diamond, and aluminum nitride (AlN). The semiconductor material and the transparent electrode form a Schottky heterojunction.

[0009] Furthermore, the orientation angles of the nanowire gratings of the three array elements in the polarization detection region are 0°, 45° and 90°, respectively, and the period of the nanowire gratings is 10 nm to 20 nm.

[0010] Furthermore, the filter films of the three array elements in the broadband extreme ultraviolet detection region are respectively made of aluminum (Al) film, zirconium (Zr) film and molybdenum (Mo) film to cover the broadband extreme ultraviolet response range of different wavelength bands.

[0011] Furthermore, the multilayer films of the three array elements in the narrow-spectrum extreme ultraviolet detection region are respectively Mo / Si multilayer films, Ni / Si multilayer films, and Si / C multilayer films.

[0012] Furthermore, each of the nine detection array elements is an independent anode electrode and shares a cathode electrode.

[0013] Furthermore, the detection chip operates under zero bias conditions, utilizing the built-in electric field of the Schottky heterojunction to achieve self-powered optical detection.

[0014] A second aspect of the present invention provides a method for fabricating the above-mentioned multifunctional integrated extreme ultraviolet detector chip, comprising the following steps: S1: Provides a semiconductor substrate; S2: p-regions and n-regions are formed on the substrate by doping with different elements, or a semiconductor epitaxial layer is grown by epitaxial technology; S3: Deposit a transparent electrode on the surface of the semiconductor material; S4: Form an array element isolation structure on the semiconductor material to define nine detector array elements arranged in a 3×3 array; S5: An ohmic contact electrode is fabricated on the back side of the substrate; S6: Prepare functional layers on the nine detector array elements in sections: prepare nanowire gratings with different orientation angles on the three array elements in the polarization detection region, prepare filter films with different spectral transmission characteristics on the three array elements in the broadband extreme ultraviolet detection region, and prepare multilayer film structures with different center wavelengths on the three array elements in the narrow spectrum extreme ultraviolet detection region.

[0015] A third aspect of the present invention provides an extreme ultraviolet (EUV) detection system, including the aforementioned multifunctional integrated EUV detection chip and a readout circuit electrically connected to the chip, for synchronously acquiring polarization information, broadband flux information and narrowband spectral information of incident EUV light under the same time reference, thereby simplifying the complexity of the EUV test optical path.

[0016] Compared with the prior art, the beneficial effects of the present invention are: (1) This invention fundamentally breaks through the separate architecture of discrete functional modules and independent detectors in traditional extreme ultraviolet detection systems. For the first time, it integrates three detection functions—polarization analysis, broadband flux monitoring, and narrowband spectral resolution—into a single semiconductor chip in the form of a 3×3 array. This integrated scheme enables the nine array elements to perform parallel and synchronous sampling of incident extreme ultraviolet light under the same time and spatial reference, thereby completely eliminating the inherent defects of traditional schemes, such as light flux loss, lack of spatiotemporal synchronization, and fuzzy correspondence of multidimensional information space caused by front-end beam splitting and differences in optical path length of multiple branches.

[0017] (2) The integrated design of the functional layer of the present invention is directly constructed on the surface of the detector element, which eliminates the multi-level optical interface between the functional layer and the detector, significantly improving the light utilization efficiency of the system, and is especially beneficial for the detection of weak extreme ultraviolet signals.

[0018] (3) The present invention replaces the complex optical path composed of polarizer, filter, multilayer film mirror and multiple independent detectors in the traditional scheme with a single chip, which greatly reduces the size, weight and assembly difficulty of the extreme ultraviolet test system, and provides key technical support for realizing the miniaturization, lightweight and high performance of extreme ultraviolet optical system. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of a 3×3 array design. The left side shows a cross-sectional view of the heterojunction detector chip, and the right side is a top view. In the diagram, 1 is the AlN epitaxial layer, 2 is the SiC substrate, 3 is the semi-transparent Pt electrode, 4 is the multifunctional detector unit, 5 is the ohmic contact electrode, and 6 is the metal electrode.

[0020] Figure 2 This is a schematic diagram of the nanowire grating array structure in the polarization detection region.

[0021] Figure 3 This is a schematic diagram of the filter array structure for the broadband extreme ultraviolet detection region.

[0022] Figure 4 This is a schematic diagram of the filter array structure for the narrow-spectrum extreme ultraviolet detection region.

[0023] Figure 5The figures show the IV characteristics of a single array element under no-light conditions and under a 13.5 nm light source.

[0024] Figure 6 The variable temperature test curves of a single array element over a wide temperature range of -150℃ to 100℃ are shown.

[0025] Figure 7 The extinction ratio curves are for polarization detection array elements with different wavelengths of extreme ultraviolet light sources and different grating periods.

[0026] Figure 8 The transmittance curves for three elements in the broadband extreme ultraviolet detection region within the wavelength range of 10-120 nm are shown. Detailed Implementation

[0027] The specific embodiments of the present invention will be further described below. It should be noted that these descriptions are for the purpose of aiding understanding the present invention, but do not constitute a limitation thereof. Furthermore, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0028] Unless otherwise specified, the experimental methods used in the following embodiments are conventional methods, and the experimental materials used in the following embodiments are all available through conventional commercial channels.

[0029] Example 1: Array Structure and Functional Area Layout This embodiment provides a specific layout and functional partitioning scheme for a 3×3 array. For example... Figure 1 As shown, the array chip includes nine detector elements arranged in a 3×3 array, with the nine elements arranged in three rows and three columns. The size of each element is from 100 μm × 100 μm to 300 μm × 300 μm, and in this embodiment, it is preferably 200 μm × 200 μm. The spacing between adjacent elements is from 20 μm to 50 μm, and in this embodiment, it is preferably 30 μm.

[0030] Electrical isolation between array elements is achieved through mesa etching structures. Specifically, mesa structures are formed on the surface of semiconductor materials using photolithography and dry etching processes. Each array element is separated by isolation channels, thereby achieving electrical isolation between array elements and ensuring the independence of the photoelectric response of each array element.

[0031] The nine array elements are divided into three functional areas: The first row of three array elements (array elements A1, A2, A3) is the polarization detection region 10, and nanowire gratings 11, 12, and 13 with orientation angles of 0°, 45°, and 90° are respectively set on the three array elements.

[0032] The three array elements in the second row (array elements B1, B2, and B3) form a broadband extreme ultraviolet detection region 20, and Al filter film 21, Zr filter film 22, and Mo filter film 23 are respectively set on the three array elements.

[0033] The three array elements in the third row (array elements C1, C2, and C3) form a narrow-spectrum extreme ultraviolet detection region 30, and Mo / Si multilayer films 31, Ni / Si multilayer films 32, and Si / C multilayer films 33 are respectively set on the three array elements.

[0034] The nine detector elements share the same substrate and detector structure, and their photoelectric response characteristics are intrinsically consistent. The nine elements operate in parallel under the same time reference, synchronously sampling the same incident extreme ultraviolet light field, thereby achieving multi-dimensional synchronous detection of the polarization characteristics, broadband response characteristics, and narrow-spectrum spectral characteristics of extreme ultraviolet light.

[0035] Example 2: Fabrication and Function of Nanowire Gratings in the Polarization Detection Region This embodiment provides the specific parameters, fabrication process, and function of the nanowire grating in the polarization detection region during synchronous detection.

[0036] like Figure 2 As shown, 0° nanowire grating 11, 45° nanowire grating 12 and 90° nanowire grating 13 are fabricated on the three array elements of the polarization detection region, respectively.

[0037] The fabrication process is as follows: First, electron beam photoresist is spin-coated onto the surface of the Pt Schottky electrode. Then, an electron beam lithography system is used to expose grating patterns at corresponding angles (0°, 45°, 90°) on different array elements. After development, a metal mask (Cr, approximately 200 nm thick, is used in this embodiment) is deposited by electron beam evaporation, and a metal grating is formed by a lift-off process. The period of the nanowire grating is 20 nm to 30 nm, preferably 25 nm in this embodiment; the linewidth is 10 nm to 15 nm, preferably 12 nm in this embodiment; and the duty cycle is 0.3 to 0.7, preferably 0.5 in this embodiment.

[0038] In synchronous detection, nanowire gratings with different orientation angles exhibit different transmission / absorption characteristics for incident extreme ultraviolet light with different polarization directions. By reading the photocurrent signals of three array elements in parallel at the same time reference, the polarization state of the incident extreme ultraviolet light, including the degree of polarization and the polarization angle, can be calculated synchronously without any mechanical rotating parts or timing switching operations.

[0039] Example 3: Preparation and Function of Broadband Extreme Ultraviolet Detection Region Filter Film This embodiment provides the specific parameters, preparation process, and functions of three types of filter films in the broadband extreme ultraviolet detection region in synchronous detection.

[0040] like Figure 3 As shown, Al filter film 21, Zr filter film 22 and Mo filter film 23 are respectively fabricated on the three array elements of the broadband extreme ultraviolet detection region.

[0041] The Al filter film 21 has a thickness of 80 nm to 200 nm, preferably 150 nm in this embodiment, and is deposited using electron beam evaporation. The Al film has high transmittance in the wavelength range of approximately 17 nm to 60 nm. The Zr filter film 22 has a thickness of 100 nm to 200 nm, preferably 150 nm in this embodiment, and is deposited using electron beam evaporation at a deposition rate of 0.5 nm / s to 1.0 nm / s. The Zr film has high transmittance in the extreme ultraviolet (EUV) band of approximately 6.5 nm to 17 nm, while also exhibiting good suppression of visible and infrared light. The Mo filter film 23 has a thickness of 80 nm to 150 nm, preferably 120 nm in this embodiment, and is deposited using electron beam evaporation or magnetron sputtering. In simultaneous detection, the combination of the three filters can cover a broad-spectrum EUV range of 6.5 nm to 60 nm. By reading the photocurrent signals of three array elements in parallel at the same time reference, the broadband flux distribution information of incident extreme ultraviolet light in different bands can be obtained synchronously, realizing comprehensive monitoring of broadband extreme ultraviolet radiation.

[0042] Example 4: Preparation and Function of Multilayer Films in Narrow-Spectrum Extreme Ultraviolet Detection Region This embodiment provides specific parameters, preparation processes, and functions of three multilayer films in the narrow-spectrum extreme ultraviolet detection region in synchronous detection.

[0043] like Figure 4 As shown, Mo / Si multilayer films 31, Ni / Si multilayer films 32, and Si / C multilayer films 33 are fabricated on three elements of the narrow-spectrum extreme ultraviolet detection region, respectively. Mo / Si multilayer film 31 uses ion beam sputtering to alternately deposit Mo and Si layers. Each period consists of one Mo layer and one Si layer, with a period thickness d = 6.8 nm to 7.0 nm (where the Mo layer thickness is approximately 2.8 nm and the Si layer thickness is approximately 4.1 nm). The number of periods is 30 to 50 pairs, preferably 40 pairs in this embodiment. The Mo / Si multilayer film exhibits narrow-band transmission / reflection characteristics near a wavelength of 13.5 nm, with a full width at half maximum (FWHM) of approximately 0.5 nm. Ni / Si multilayer film 32 uses magnetron sputtering to alternately deposit Mo and Be layers. The period thickness is 5.6 nm to 5.8 nm, with 30 to 50 pairs of periods, preferably 40 pairs in this embodiment. The center wavelength of the Ni / Si multilayer film is approximately 11.3 nm. Si / C multilayer film 33 uses magnetron sputtering to alternately deposit Si and C layers. The period thickness is 15.0 nm to 15.5 nm, and the number of periods is 20 to 40 pairs, preferably 30 pairs in this embodiment.

[0044] In the fabrication process of the aforementioned multilayer films, the deposition time and rate of each layer are precisely controlled to ensure that the cycle thickness meets the design requirements. The vacuum level of the chamber before deposition is better than 5 × 10⁻⁶. -5 Pa, during the deposition process, a quartz crystal oscillator was used to monitor the film thickness in real time.

[0045] In synchronous detection, the three array elements exhibit selective responses to narrowband extreme ultraviolet radiation around 13.5 nm, 11.3 nm, and 30.4 nm, respectively. By reading the photocurrent signals of the three array elements in parallel at the same time reference, the narrowband spectral information of the incident extreme ultraviolet light at three characteristic wavelengths can be acquired synchronously, enabling parallel monitoring of multiple spectral lines.

[0046] Example 5: Complete Fabrication Process of Heterojunction Detector Chip This embodiment provides a heterojunction-type detection chip (such as...) Figure 1 The complete preparation process and performance test results are shown in the figure.

[0047] Step (a): Provide an N-type SiC substrate 2 and perform standard cleaning (in sequence, use acetone, isopropanol, and deionized water for ultrasonic cleaning, and then use RCA cleaning method to remove surface contaminants and the natural oxide layer).

[0048] Step (b): An AlN epitaxial layer 1 was epitaxially grown on substrate 2 using metal-organic chemical vapor deposition (MOCVD). TMAl and NH3 were used as precursors, H2 as the carrier gas, the growth temperature was 1300℃, the growth pressure was 100 Torr, the growth rate was 0.5 nm / s to 1.0 nm / s, and the growth thickness was 200 nm. After the AlN epitaxial layer was grown, its quality was characterized by high-resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM).

[0049] Step (c): Forming the array element isolation structure through photolithography and dry etching. First, photoresist is spin-coated on the surface of the AlN layer, and a 3×3 array pattern is formed by photolithography. Then, an inductively coupled plasma (ICP) etching system is used to etch the AlN layer with a Cl2 / BCl3 mixed gas to the surface of the SiC substrate to form a mesa structure, in which each array element is separated by isolation channels.

[0050] Step (d): A semi-transparent Pt Schottky electrode 3 was deposited on the surface of the AlN epitaxial layer 1 using electron beam evaporation. The deposition rate was 0.2 nm / s, and the Pt layer thickness was 8 nm. The cavity vacuum level before deposition was better than 1×10⁻⁶. -5 Pa.

[0051] Step (e): An ohmic contact electrode 5 is fabricated on the lower surface of the substrate. A Ti (50 nm) / Ti (30 nm) / Au (100 nm) multilayer metal is sequentially deposited using electron beam evaporation. After deposition, the metal is rapidly thermally annealed at 850 °C for 60 seconds in a nitrogen atmosphere.

[0052] Step (f): On the three elements of the polarization detection region, 0°, 45° and 90° nanowire gratings 11, 12 and 13 are fabricated by electron beam lithography and reactive ion etching, respectively.

[0053] Step (g): On the three array elements in the broadband extreme ultraviolet detection region, Al filter film 21, Zr filter film 22 and Mo filter film 23 are deposited respectively using a mask partitioning deposition process; On the three array elements in the narrow spectrum extreme ultraviolet detection region, Mo / Si multilayer film 31, Ni / Si multilayer film 32 and Si / C multilayer film 33 are deposited in partitions using an ion beam sputtering method.

[0054] Example 6: Complete Fabrication Process and Performance Verification of Homojunction Detector Chip (1) An n-type 4H-SiC single crystal substrate was selected, with a doping concentration of 1×10⁻⁶. 18 cm -3 The sample was 350±25 μm thick and polished on both sides. It was then ultrasonically cleaned in acetone and isopropanol for 30 minutes each to remove organic contaminants. The sample was then thoroughly cleaned using the RCA standard cleaning procedure and immediately transferred to the process chamber.

[0055] (2) A SiO2 hard mask layer with a thickness of 500 nm was deposited on the SiC substrate surface using plasma-enhanced chemical vapor deposition (PECVD). Process parameters: SiH4 flow rate 160 sccm, N2O flow rate 800 sccm, pressure 900 mTorr, temperature 300℃, RF power 100 W. A mask was used for exposure to define the p-type doped region of each element in the 3×3 array. The exposed SiO2 region was etched using reactive ion etching (RIE). Process parameters: CF4 flow rate 30 sccm, CHF3 flow rate 20 sccm, Ar flow rate 5 sccm, pressure 50 mTorr, RF power 150 W. Etching continued until the SiC surface was exposed, and the endpoint was confirmed by detection. Aluminum ions (Al) were selected. + As a p-type dopant, it is implanted at a high temperature of 500°C to reduce lattice damage and promote dynamic annealing.

[0056] (4) Before annealing, the SiO2 hard mask layer is removed by wet etching with a buffer oxide etchant to avoid the mask reacting with SiC at high temperatures. To avoid SiC surface decomposition and selective Si sublimation during annealing, a carbon cap layer (approximately 200 nm amorphous carbon) is deposited by PECVD as a protective layer, or an AlN thin layer is used as a protective layer. Then, a high-temperature rapid thermal annealing furnace (RTA) or induction heating furnace is used to achieve high-temperature annealing of >1600℃ in an Ar atmosphere. If a carbon cap layer is used, O2 plasma ashing is employed.

[0057] (5) Atomic layer deposition (ALD) is used to deposit approximately 10 nm of Al2O3 as a surface passivation layer to reduce surface leakage current and improve device stability.

[0058] (6) A Pt layer with a thickness of 8 nm was deposited by electron beam evaporation or magnetron sputtering at a deposition rate of 0.5 Å / s.

[0059] (7) An ohmic contact electrode was prepared on the lower surface of the substrate by electron beam evaporation deposition of a multilayer structure: Ti (20 nm) / Ni (50 nm) / Ag (50 nm) / Au (100 nm); then rapid thermal annealing was performed at 950 °C in N2 atmosphere.

[0060] (8) On the three array elements in the polarization detection region, 0°, 45° and 90° nanowire gratings were fabricated using electron beam lithography and reactive ion etching processes, respectively. On the three array elements in the broadband extreme ultraviolet detection region, Al filter films, Zr filter films and Mo filter films were deposited using a mask partitioning deposition process, respectively. On the three array elements in the narrow spectrum extreme ultraviolet detection region, Mo / Si multilayer films, Ni / Si multilayer films and Si / C multilayer films were deposited in partitioning using an ion beam sputtering method.

[0061] (9) Using an ultrasonic pressure welding machine, the nine array element electrodes and the back ohmic contact electrode are respectively led out to the ceramic tube shell pin package.

[0062] (10) Performance testing and verification: After the device fabrication is completed, the electrical and optical performance of the array chip is tested.

[0063] Electrical testing: The IV characteristic curve was measured using a semiconductor parameter analyzer. Figure 5 These are the IV characteristic curves of a single element of the detector under no-light conditions and under a 13.5 nm light source. The dark current of the device at a 2.0 V bias is approximately 10... -9 A represents the detector's leakage current in the absence of light, which is in a low order. The photocurrent under the same bias voltage is 10. -6A, which is three orders of magnitude higher than the dark current, indicates that the device possesses good photoelectric response and excellent signal discrimination. A single element of the array chip was selected for variable-temperature testing over a wide temperature range of -150℃ to 100℃. For example... Figure 6 As shown, throughout the entire test temperature range, both the dark current and photocurrent of the detector exhibit monotonous and gradual changes, and the photocurrent is 5 orders of magnitude larger than the dark current, indicating that the detector chip has reliable working stability and signal recognition capability over a wide temperature range.

[0064] Polarization response simulation test: Figure 7 The extinction ratio curves are for array elements in the polarization detection region with different wavelengths of extreme ultraviolet light sources and different grating periods. Under a 13.5 nm wavelength light source, the extinction ratio of the grating with a period of 12 nm reaches more than 12:1. This array element can complete polarization detection in the extreme ultraviolet band.

[0065] Membrane permeability test: Figure 8 These are the transmittance curves of three array elements in the broadband extreme ultraviolet detection region within the wavelength range of 10-120 nm, with a film thickness of 200 nm. The three array elements exhibit relatively flat spectral responses within their respective designed wavelength ranges, covering the response wavelength range of 10 nm-120 nm, and the three array elements are clearly distinguishable.

[0066] The test results above show that the detector chip has good photoelectric performance, stability and synchronous detection capability, which can meet the needs of multifunctional integrated extreme ultraviolet detectors in application fields such as extreme ultraviolet lithography monitoring, space astronomical observation and plasma diagnostics.

[0067] The embodiments of the present invention have been described in detail above, but the present invention is not limited to the described embodiments. For those skilled in the art, various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and these variations still fall within the protection scope of the present invention.

Claims

1. A multifunctional integrated extreme ultraviolet (EUV) detector chip, characterized in that, include: A multi-functional detection unit mounted on the extreme ultraviolet detector; The multifunctional detection unit includes nine detection elements arranged in a 3×3 array. The nine detector array elements are divided into three functional regions: polarization detection region, broadband extreme ultraviolet detection region and narrow spectrum extreme ultraviolet detection region, with each functional region containing three array elements; The three array elements of the polarization detection region are respectively equipped with nanowire grating structures with different orientation angles, which are used to synchronously acquire polarization state information of incident extreme ultraviolet light. The three array elements of the broadband extreme ultraviolet detection region are respectively equipped with filter films with different spectral transmission characteristics, which are used to simultaneously acquire broadband flux information of incident extreme ultraviolet light. The three array elements of the narrow-band extreme ultraviolet detection region are respectively equipped with multilayer film structures with different center wavelengths, which are used to simultaneously acquire narrow-band spectral information of incident extreme ultraviolet light. The nine detector elements operate in parallel under the same time reference, enabling simultaneous detection of the polarization characteristics, broadband response characteristics, and narrow spectrum characteristics of incident extreme ultraviolet light.

2. The multifunctional integrated extreme ultraviolet detector chip according to claim 1, characterized in that, The extreme ultraviolet detector has a pn junction or pin junction structure, and the semiconductor material used to fabricate the extreme ultraviolet detector is at least one of silicon, silicon carbide, gallium nitride, gallium oxide, diamond, and aluminum nitride.

3. The multifunctional integrated extreme ultraviolet detector chip according to claim 1, characterized in that, The orientation angles of the nanowire gratings of the three array elements in the polarization detection region are 0°, 45° and 90°, respectively, and the period of the nanowire grating is 10 nm to 20 nm.

4. The multifunctional integrated extreme ultraviolet detector chip according to claim 1, characterized in that, The filter films of the three array elements in the broadband extreme ultraviolet detection region are aluminum film, zirconium film and molybdenum film, respectively, to cover the broadband extreme ultraviolet response range of different wavelengths.

5. A multifunctional integrated extreme ultraviolet detector chip according to claim 1, characterized in that, The three array elements in the narrow-spectrum extreme ultraviolet detection region are respectively composed of Mo / Si multilayer film, Ni / Si multilayer film and Si / C multilayer film.

6. A multifunctional integrated extreme ultraviolet detector chip according to claim 1, characterized in that, Each of the nine detection array elements has an independent anode electrode and a shared cathode electrode.

7. A multifunctional integrated extreme ultraviolet detector chip according to claim 2, characterized in that, The detection chip operates under zero bias conditions, enabling self-powered electrode ultraviolet light detection.

8. A method for fabricating a multifunctional integrated extreme ultraviolet detector chip as described in any one of claims 1-7, characterized in that, Includes the following steps: S1: Provides a semiconductor substrate; S2: p-regions and n-regions are formed on the substrate by doping with different elements, or a semiconductor epitaxial layer is grown by epitaxial technology; S3: Deposit a transparent electrode on the surface of the semiconductor material; S4: Form an array element isolation structure on the semiconductor material to define nine detector array elements arranged in a 3×3 array; S5: An ohmic contact electrode is fabricated on the back side of the substrate; S6: Prepare functional layers on the nine detector array elements in sections: prepare nanowire gratings with different orientation angles on the three array elements in the polarization detection region, prepare filter films with different spectral transmission characteristics on the three array elements in the broadband extreme ultraviolet detection region, and prepare multilayer film structures with different center wavelengths on the three array elements in the narrow spectrum extreme ultraviolet detection region.

9. An extreme ultraviolet detection system, characterized in that, The invention includes the multifunctional integrated extreme ultraviolet detector chip as described in any one of claims 1-7, and a readout circuit electrically connected to the chip, for synchronously acquiring polarization information, broadband flux information and narrowband spectral information of incident extreme ultraviolet light under the same time reference.

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