Euv narrow-band photodetector and imager

Abstract

The application belongs to the field of BEUV lithography technology, and particularly relates to a beyond extreme ultraviolet narrow-band photoelectric detection and imaging device. In view of the overall blank of BEUV wave band special photoelectric detection technology, and the core pain point that the existing 13.5 nm EUV detector structure and material system cannot adapt to the working requirements of BEUV wavelength, the device adopts a wide-band semiconductor solid detector or a vacuum electron device as a device substrate, cooperates with a collaborative laminated structure design of lanthanum boride and Ag, Au, Pt and other noble metal films, and realizes efficient detection of BEUV photons by relying on the matching and coupling of the substrate material and the multi-layer functional film.

Description

Technical Field

[0001] This invention belongs to the field of beyond ultraviolet (BEUV) lithography technology, specifically relating to beyond ultraviolet narrowband photoelectric detection and imaging devices. Background Technology

[0002] With the gradual commercialization of 13.5 nm extreme ultraviolet (EUV) lithography technology for advanced processes at 5 nm and below, beyond extreme ultraviolet (BEUV) lithography, with 6.X nm (typically 6.7 nm) as its core wavelength, has become a core research direction for next-generation semiconductor manufacturing. It also has key application value in fields such as synchrotron radiation, space astronomy, and high-precision detection. Currently, there is a lack of research on the design, fabrication, and application of 6.7 nm BEUV band silicon-based photodetectors globally, as well as a lack of wide-bandgap semiconductor photodetector systems adapted to this band. Dedicated photodetector technology for the 6.7 nm BEUV band is in a research vacuum, lacking mature device configurations, standardized stack-up structures, and complete performance optimization schemes, which cannot support the core engineering requirements of BEUV lithography such as beam diagnostics, wavefront detection, and overlay measurement and control.

[0003] Addressing the core pain points of the lack of dedicated photoelectric detection technology for the 6.7 nm BEUV band and the inability of existing 13.5 nm EUV detector structures and material systems to meet the operational requirements of the 6.7 nm wavelength, this invention aims to provide a dedicated BEUV detector for the 6.7 nm beyond extreme ultraviolet band, filling the technological gap in 6.7 nm BEUV band detectors and meeting the core requirements for 6.7 nm BEUV band detection. Summary of the Invention

[0004] To address the problems existing in the prior art, this invention provides a beyond-extreme ultraviolet (BEUV) narrowband photoelectric detection and imaging device. It employs a wide-bandgap semiconductor solid-state detector or vacuum electronic device as the substrate, and combines it with lanthanum boride (LaB6) and noble metal films such as Ag, Au, and Pt. Through the matched coupling between the substrate and the multilayer functional films, selective detection of BEUV photons is achieved.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows: The first aspect of the present invention provides a beyond-extreme ultraviolet narrowband photodetector, comprising a wide bandgap semiconductor solid-state detector or a vacuum electronic device, and a LaB6 film and a noble metal film sequentially disposed on the surface of the wide bandgap semiconductor solid-state detector or vacuum electronic device; through the synergistic cooperation of the LaB6 film and the noble metal film, absorption of BEUV photons, narrowband filtering and background noise shielding are achieved.

[0006] Furthermore, the noble metal film is at least one of Ag film, Au film, and Pt film.

[0007] Furthermore, the thickness of both the LaB6 film and the noble metal film is 10~300 nm.

[0008] Furthermore, the LaB6 film and the noble metal film can be directly contacted with the wide bandgap semiconductor solid-state detector or vacuum electronic device as an electrode / filter structure.

[0009] Furthermore, the wide bandgap semiconductor solid-state detector first introduces low work function metals such as Ti, Ni, and Cr with a thickness of 5~50 nm, and then forms the LaB6 film and noble metal film to achieve ohmic contact.

[0010] Furthermore, the wide bandgap semiconductor solid-state detector is a wide bandgap semiconductor diode or a wide bandgap semiconductor transistor.

[0011] Furthermore, the wide bandgap semiconductor diode is any one of a silicon carbide homojunction diode, an aluminum nitride heterojunction diode, a silicon carbide Schottky diode, a gallium nitride homojunction diode, a gallium nitride Schottky diode, and a gallium oxide homojunction diode. Specifically, the silicon carbide homojunction diode is p-SiC / n-SiC or p-SiC / i-SiC / n-SiC, the aluminum nitride heterojunction diode is i-AlN / n-SiC, and the gallium nitride homojunction diode is p-GaN / n-GaN or p-GaN / i-GaN / n-GaN. The transistor is a transistor with silicon carbide, gallium nitride, gallium oxide, or aluminum nitride as its N-type and P-type layers.

[0012] Furthermore, the vacuum electronic device is a vacuum photodiode, a photomultiplier tube, or a microchannel plate.

[0013] A second aspect of the present invention provides an array detector, wherein the above-mentioned ultraviolet narrowband photodetector is used as a single point device, and a plurality of said single point devices are arranged to form an array detector.

[0014] A third aspect of the present invention provides a linear array detector, wherein the above-mentioned beyond-extreme ultraviolet narrowband photodetector is used as a single-point device, and a plurality of said single-point devices are arranged to form a linear array detector.

[0015] Compared with the prior art, the beneficial effects of the present invention are: This invention uses a wide-bandgap semiconductor solid-state detector or vacuum electronic device as a substrate, and combines the synergistic design of LaB6 film and noble metal film. Through the matching coupling of the substrate device and the multilayer functional film, selective detection of BEUV photons is achieved, meeting the photoelectric detection requirements of the BEUV band. Attached Figure Description

[0016] Figure 1 This is the BEUV narrowband filter-detector integrated device structure based on p-SiC / n-SiC homogeneous PN diodes and LaB6-Ag films in Example 1.

[0017] Figure 2 The transmittance is the value of an Ag film with a thickness of 100 nm.

[0018] Figure 3 The transmittance is the transmittance of an Au film with a thickness of 100 nm.

[0019] Figure 4 The transmittance is the transmittance of a 100 nm thick Pt film.

[0020] Figure 5 The transmittance is the transmittance of a 100 nm thick LaB6 film.

[0021] Figure 6 The transmittance is the LaB6-Ag membrane, where the thickness of both LaB6 and Ag is 100 nm.

[0022] Figure 7 The image shows the response curve of the ultraviolet silicon-based photodetector in Example 1.

[0023] Figure 8 This is a physical image of a BEUV narrowband filter-detector integrated device based on a p-SiC / n-SiC homogeneous PN diode and a LaB6-Ag film.

[0024] Figure 9 This is the BEUV narrowband filter-detector integrated device structure based on i-AlN / n-SiC heterojunction diode and LaB6-Au film in Example 2.

[0025] Figure 10 This is the BEUV narrowband filter-detector integrated device structure based on silicon carbide transistor and LaB6-Ag film in Example 3. Detailed Implementation

[0026] The specific embodiments of the present invention will be further described below. It should be noted that these descriptions are for the purpose of aiding understanding the present invention, but do not constitute a limitation thereof. Furthermore, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0027] Unless otherwise specified, the experimental methods used in the following embodiments are conventional methods, and the experimental materials used in the following embodiments are all available through conventional commercial channels.

[0028] Example 1: Fabrication and Testing of an Extra-Ultraviolet SiC Homogeneous Diode Photodetector (1) Fabrication of silicon carbide diodes: N-type silicon carbide substrates are selected and epitaxial growth process is adopted.

[0029] (2) Deposition of LaB6 film by magnetron sputtering: Lanthanum hexaboride target with a purity of 99.95% was used as the sputtering target, and the sputtering was carried out at a pressure of 10 -4 Below Pa, argon gas was introduced, with the argon gas flow rate controlled at 20 sccm, the sputtering power at 80 W, the working pressure at 0.3 Pa, the substrate temperature maintained at 300 ℃, and the deposition time at 1.5 h, to prepare a 200 nm LaB6 film.

[0030] (3) Magnetron sputtering deposition of Ag film: An Ag film is deposited on the surface of the LaB6 film as the top layer film and the top electrode of the detector. A sputtering target with a purity of 99.999% is used as the sputtering target, and the sputtering is carried out at a pressure of 10. -3 Below Pa, argon gas was introduced at a flow rate of 30 sccm, sputtering power was 80 W, operating pressure was 0.8 Pa, and deposition time was 10 min, resulting in a 100 nm Ag film. The structure of the fabricated BEUV narrowband filter-detector integrated device based on a p-SiC / n-SiC homogeneous PN diode and a LaB6-Ag film is shown below. Figure 1 As shown.

[0031] The transmittance of a 100 nm thick Ag film, a 100 nm thick Au film, a 100 nm thick Pt film, a 100 nm thick LaB6 film, and a LaB6-Ag film (both LaB6 and Ag are 100 nm thick) are respectively as follows: Figure 2 , 3 As shown in Figures 4, 5, and 6.

[0032] The performance of the LaB6-Ag film photodetector prepared in this embodiment was tested, and the response curve is shown below. Figure 7 As shown, the results indicate that the detector's dark current is 8 × 10⁻⁶. -12 A, with a response time of 8 ns. A physical diagram is shown below. Figure 8 As shown, it fully meets the requirements for detection performance in the claims and can achieve accurate detection in the 6.7 nm BEUV band.

[0033] Example 2: Fabrication of an ultraviolet (EUV) AlN heterojunction photodetector This embodiment, based on Embodiment 1, uses an aluminum nitride heterojunction diode (i-AlN / n-SiC) as the photoelectric conversion layer, SiC as the substrate, and an i-AlN / n-SiC heterojunction as the photoelectric conversion unit, combined with a 100 nm LaB6-Au composite film system, as shown in the structure. Figure 9 As shown.

[0034] Example 3: Fabrication of an ultraviolet silicon carbide transistor photodetector (1) Silicon carbide transistor fabrication: An N-type silicon carbide substrate is selected, and a P-type silicon carbide base region and an N-type silicon carbide collector region are epitaxially grown.

[0035] (2) Deposition of LaB6 film by magnetron sputtering: Lanthanum hexaboride target with a purity of 99.95% was used as the sputtering target, and the sputtering was carried out at a pressure of 10 -4 Below Pa, argon gas was introduced, with the argon gas flow rate controlled at 20 sccm, the sputtering power at 80 W, the working pressure at 0.3 Pa, the substrate temperature maintained at 300 ℃, and the deposition time at 1.5 h, to prepare a 200 nm LaB6 film.

[0036] (3) Magnetron sputtering deposition of Ag film: An Ag film is deposited on the surface of the LaB6 film as the top layer film and the top electrode of the detector. A sputtering target with a purity of 99.999% is used as the sputtering target, and the sputtering is carried out at a pressure of 10. -3 Below Pa, argon gas was introduced at a flow rate of 30 sccm, sputtering power was 80 W, operating pressure was 0.8 Pa, and deposition time was 10 min, resulting in a 100 nm Ag film. The fabricated detector structure is shown below. Figure 10 As shown.

[0037] The embodiments of the present invention have been described in detail above, but the present invention is not limited to the described embodiments. For those skilled in the art, various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and these variations still fall within the protection scope of the present invention.

Claims

1. A narrowband photodetector that extends beyond extreme ultraviolet light, characterized in that, It includes a wide bandgap semiconductor solid-state detector or vacuum electronic device, and a LaB6 film and a noble metal film sequentially disposed on the wide bandgap semiconductor solid-state detector or vacuum electronic device.

2. The ultraviolet-superior narrowband photodetector according to claim 1, characterized in that, The wavelength of the beyond-extreme ultraviolet is less than 13.5 nm, with a typical wavelength of 6.7 nm.

3. The ultraviolet-superior narrowband photodetector according to claim 1, characterized in that, The noble metal film is at least one of Ag film, Au film, and Pt film.

4. The ultraviolet-light narrowband photodetector according to claim 1, characterized in that, The thickness of the LaB6 film is 10~300 nm, and the thickness of the noble metal film is 10~300 nm.

5. A beyond-extreme ultraviolet narrowband photodetector according to claim 1, characterized in that, The LaB6 film and noble metal film are directly in contact with the wide bandgap semiconductor solid-state detector or vacuum electronic device as electrodes, or a low work function metal Ti, Ni or Cr with a thickness of 5~50 nm is first introduced, and then the LaB6 film and noble metal film are formed to achieve ohmic contact.

6. The ultraviolet-superior narrowband photodetector according to claim 1, characterized in that, The wide bandgap semiconductor solid-state detector is a diode and / or a transistor; the diode is any one of a silicon carbide homojunction diode, an aluminum nitride heterojunction diode, a silicon carbide Schottky diode, a gallium nitride homojunction diode, a gallium nitride Schottky diode, and a gallium oxide homojunction diode, wherein the silicon carbide homojunction diode is p-SiC / n-SiC or p-SiC / i-SiC / n-SiC, the aluminum nitride heterojunction diode is i-AlN / n-SiC, and the gallium nitride homojunction diode is p-GaN / n-GaN or p-GaN / i-GaN / n-GaN; the transistor is a transistor with silicon carbide, gallium nitride, gallium oxide, or aluminum nitride as the N-type layer and the P-type layer.

7. A beyond-extreme ultraviolet narrowband photodetector according to claim 1, characterized in that, The vacuum electronic device is a vacuum photodiode, photomultiplier tube, or microchannel plate.

8. A linear array detector, characterized in that, Using the ultraviolet narrowband photodetector as described in claim 1 as a single-point device, multiple single-point devices are arranged to form a linear array detector.

9. A planar array detector, characterized in that, Using the ultraviolet narrowband photodetector as described in claim 1 as a single-point device, multiple single-point devices are arranged to form an array detector.

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