Light emitting component and display substrate

Abstract

The application discloses a light-emitting assembly and a display substrate, and relates to the technical field of display. The light-emitting assembly comprises a substrate, a color conversion unit, a lens unit and a light-emitting unit. The light-emitting unit emits light rays of a target color, which are converged by the lens unit and then emitted from a reflecting part after color conversion by the color conversion unit. Meanwhile, at least part of the light rays of the target color which are converged by the lens unit and not converted in color by the color conversion unit can be reflected by the reflecting part back into the color conversion unit and then converted again by the color conversion unit, thereby improving the utilization rate of the light rays emitted by the light-emitting unit and improving the light-emitting effect of the light-emitting assembly.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a light-emitting component and a display substrate. Background Technology

[0002] The light-emitting component includes a light-emitting unit and a color conversion unit. The light emitted by the light-emitting unit can be converted by the color conversion unit before being emitted.

[0003] In related technologies, some of the light emitted by the light-emitting unit may not be converted by the color conversion unit, resulting in low light utilization of the light-emitting unit and poor light emission effect of the light-emitting component. Summary of the Invention

[0004] This application provides a light-emitting component and a display substrate, which can solve the problem of poor light-emitting effect of light-emitting components in related technologies. The technical solution is as follows:

[0005] On the one hand, a light-emitting component is provided, the light-emitting component comprising: a substrate, a color conversion unit, a lens unit, and a light-emitting unit;

[0006] The color conversion unit is located on one side of the substrate. The color conversion unit includes a reflective part and a color conversion part arranged in a direction away from the substrate. The color conversion part is used to convert the light emitted by the light-emitting unit into light of other colors.

[0007] The lens unit includes a lens and a lens planarization layer located on the side of the lens closer to the substrate. The orthographic projection of the lens on the substrate overlaps with the orthographic projection of the color conversion part on the substrate. The lens unit is used to converge the light emitted by the light-emitting unit.

[0008] The orthographic projection of the light-emitting unit on the substrate overlaps with the orthographic projection of the color conversion unit on the substrate. The light of the target color emitted by the light-emitting unit is converged by the lens unit and converted by the color conversion unit before being emitted from the reflective part.

[0009] Optionally, the orthographic projection of the lens onto the substrate is circular, with the diameter of the circle being greater than or equal to the width of the orthographic projection of the color conversion part onto the substrate, and less than or equal to the diagonal length of the orthographic projection of the color conversion part onto the substrate.

[0010] Optionally, the light-emitting component includes multiple light-emitting units, and the lens unit includes multiple lenses corresponding to the multiple light-emitting units;

[0011] The orthographic projection of each lens on the substrate and the orthographic projection of the corresponding light-emitting unit on the substrate overlap, and the diameter of the circle also satisfies the condition that the interval between two adjacent lenses is less than or equal to the minimum design size of the interval.

[0012] Optionally, the minimum design size of the spacing is greater than or equal to 5 micrometers.

[0013] Optionally, the light-emitting component includes a plurality of light-emitting units, and the lens unit includes a plurality of lenses corresponding to the plurality of light-emitting units; the light-emitting component further includes an anti-crosstalk layer located between the lens unit and the light-emitting units;

[0014] The refractive index of the anti-crosstalk layer is less than the refractive index of the film layer near the anti-crosstalk layer in the light-emitting unit.

[0015] Optionally, the light-emitting component includes a plurality of light-emitting units, and the lens unit includes a plurality of lenses corresponding to the plurality of light-emitting units; the light-emitting component further includes an anti-crosstalk layer located between the lens unit and the light-emitting units;

[0016] The anti-crosstalk layer is made of silicon oxide, and the included angle δ′ is greater than 33°.

[0017] The anti-crosstalk layer is made of silicon nitride, and the included angle δ′ is greater than 48°.

[0018] The anti-crosstalk layer is made of silicon oxynitride, and the included angle δ′ is greater than 33°.

[0019] The anti-crosstalk layer is made of acrylic resin, and the included angle δ′ is greater than 34°.

[0020] The anti-crosstalk layer is made of carbonate, and the included angle δ′ is greater than 36°.

[0021] The anti-crosstalk layer is made of polyurethane resin, and the included angle δ′ is greater than 32°.

[0022] Wherein, δ′ is the angle between the target line and the target normal, the target line is the boundary of the light-emitting surface of one of the light-emitting units that is close to the boundary of another adjacent light-emitting unit, and the line connecting the boundary of the orthographic projection of the lens corresponding to the other adjacent light-emitting unit onto the anti-crosstalk layer that is close to the boundary of one of the light-emitting units, and the target normal is perpendicular to the surface of the anti-crosstalk layer.

[0023] Optionally, the refractive index n2 of the anti-crosstalk layer satisfies: n2≤n1*sinδ′;

[0024] Wherein, n1 is the refractive index of the film layer near the anti-crosstalk layer in the light-emitting unit, δ is the angle between the target line and the target normal, and δ′ is the critical angle at which total internal reflection can occur when light is incident from the second sub-layer to the anti-crosstalk layer. The target line is the line connecting the boundary of the light-emitting surface of one light-emitting unit near the boundary of another adjacent light-emitting unit, and the line connecting the boundary of the orthographic projection of the lens corresponding to the other adjacent light-emitting unit onto the anti-crosstalk layer near the boundary of one light-emitting unit. The target normal is perpendicular to the surface of the anti-crosstalk layer.

[0025] Optionally, θ satisfies:

[0026]

[0027] Wherein, θ is the angle between the incident ray from the second sublayer to the anti-crosstalk layer and the surface of the second sublayer away from the substrate, θ′ is the acute angle between the target line and the surface of the second sublayer away from the substrate, θ=90°-δ, δ is the angle between the incident ray from the second sublayer to the anti-crosstalk layer and the target normal, θ′=90°-δ′, b is the distance between the light-emitting surface of the light-emitting unit and the side of the anti-crosstalk layer near the light-emitting unit, D is the distance between adjacent lenses, and E is the distance between the boundary of the light-emitting surface of the light-emitting unit and the boundary of the lens corresponding to the light-emitting unit.

[0028] Optionally, b satisfies: b = f - fF / C; where f is the focal length of the lens, F is the width of the orthographic projection of the light-emitting surface of the light-emitting unit onto the substrate, and C is the width of the orthographic projection of the lens onto the substrate.

[0029] f satisfies: f = r / Δn; where r is the equivalent radius of curvature of the lens, and Δn is the difference between the refractive index of the lens and the refractive index of the lens planarization layer;

[0030] r satisfies: r = (H) 2 +(C / 2) 2 ) / 2H; where H is the camber of the lens;

[0031] The equivalent radius of curvature of the lens refers to the radius of curvature of the curved surface at the position of the principal optical axis of the lens.

[0032] Optionally, the color conversion unit further includes: a light-shielding layer and a defining dam layer disposed sequentially along a direction away from the substrate;

[0033] The light-shielding layer includes a light-transmitting hole, and the reflective portion is located at least within the light-transmitting hole;

[0034] The defined dam layer includes an opening area, the color conversion part is located at least within the opening area, and the orthographic projection of the opening area on the substrate and the orthographic projection of the light-transmitting hole on the substrate overlap;

[0035] Wherein, the first included angle between the sidewall of the limiting dam layer near the opening region and the side of the limiting dam layer away from the substrate is an acute angle.

[0036] Optionally, the first included angle ranges from 35 degrees to 70 degrees.

[0037] Optionally, the color conversion unit further includes: a first reflective layer located on the sidewall of the defined dam layer near the opening area; the material of the first reflective layer includes metal.

[0038] Optionally, the target color is blue, and the reflective part includes a first dielectric layer and a second dielectric layer, which are alternately stacked once or more to transmit red and green light and reflect blue light with an angle less than or equal to the target angle with the first normal.

[0039] Optionally, the lens unit further includes: a light adjustment structure located at the interval between adjacent lenses;

[0040] The height of the light-adjusting structure is greater than or equal to the arch height of the lens, and the light-adjusting structure is used to block or reflect light after passing through the lens.

[0041] Optionally, the material of the light-adjusting structure includes a light-shielding material; or,

[0042] The light-adjusting structure includes a main body and a second reflective layer located on the side wall of the main body. The material of the main body includes a light-shielding material or a light-transmitting material, and the material of the second reflective layer includes metal.

[0043] Optionally, the light-emitting unit includes a first semiconductor layer and a light-emitting functional layer located on the side of the first semiconductor layer away from the substrate; the first semiconductor layer includes a first sub-layer and a second sub-layer stacked in a direction away from the substrate, the second sub-layer being a continuous film layer, and the light-emitting functional layer includes a light-emitting layer and a second semiconductor layer stacked in a direction away from the substrate.

[0044] The lens unit further includes an auxiliary layer located on the side of the lens away from the substrate; the auxiliary layer is a continuous film layer;

[0045] The lens is spaced apart from the second sublayer in a direction perpendicular to the substrate.

[0046] Optionally, the surface of the auxiliary layer near the substrate is planar, and the lens covers a portion of the planar surface of the auxiliary layer near the substrate.

[0047] Optionally, the light-emitting unit includes a first semiconductor layer and a light-emitting functional layer located on the side of the first semiconductor layer away from the substrate; the first semiconductor layer includes a first sub-layer and a second sub-layer stacked in a direction away from the substrate, the second sub-layer includes a film pattern, the orthographic projection of the film pattern on the substrate is located within the orthographic projection of the lens on the substrate, and the light-emitting functional layer includes a light-emitting layer and a second semiconductor layer stacked in a direction away from the substrate.

[0048] The lens unit further includes an auxiliary layer located on the side of the lens away from the substrate; the auxiliary layer includes a cutout area, the orthographic projection of the film pattern on the substrate and the orthographic projection of the cutout area on the substrate overlap, the thickness of the auxiliary layer is less than the thickness of the film pattern, and the edge of the lens on the side away from the substrate contacts the surface of the auxiliary layer close to the substrate.

[0049] The lens's orthogonal projection onto the substrate covers the orthogonal projection of the film pattern onto the substrate, and encloses the surface of the film pattern near the substrate, as well as a portion of the side surface of the film pattern.

[0050] Optionally, the thickness difference G between the film pattern and the auxiliary layer satisfies:

[0051]

[0052] Wherein, G′ is the maximum value of the difference between the thickness of the film pattern and the auxiliary layer, r is the equivalent radius of curvature of the lens, k is the width of the orthographic projection of the film pattern on the substrate, and the equivalent radius of curvature of the lens refers to the radius of curvature of the lens on the target cross section, which is perpendicular to the side of the lens away from the substrate and passes through the center of the lens;

[0053] The equivalent radius of curvature of the lens refers to the radius of curvature of the curved surface position passing through the principal optical axis of the lens. For example, for an axisymmetric lens, the principal optical axis may coincide with the lens's axis of symmetry; for example, the principal optical axis may be a straight line passing through the lens's centroid and parallel to the lens's thickness direction.

[0054] Optionally, the thickness h of the film pattern satisfies:

[0055] h≤h′=H+T+G′-r;

[0056] Where h′ is the maximum thickness of the film pattern, H is the arch height of the lens, and T is the thickness of the auxiliary layer.

[0057] Optionally, the light-emitting component further includes: a bonding adhesive layer located between the color conversion unit and the lens unit, the bonding adhesive layer being used to connect the color conversion unit and the light-emitting unit; or,

[0058] The lens planarization layer in the lens unit is reused as a bonding adhesive layer, and the lens planarization layer is used to connect the color conversion unit and the light emission unit.

[0059] On the other hand, a display substrate, a driving backplate, and a plurality of light-emitting components as described above are provided, located on one side of the driving backplate and arranged in an array.

[0060] The driving backplate is used to provide driving signals to the light-emitting component to drive the light-emitting unit in the light-emitting component to emit light.

[0061] The beneficial effects of the technical solution provided in this application include at least the following:

[0062] This application provides a light-emitting component and a display substrate. The light-emitting component includes a substrate, a color conversion unit, a lens unit, and a light-emitting unit. Light of a target color emitted by the light-emitting unit is focused by the lens unit and converted in color by the color conversion unit before exiting through a reflective unit. Simultaneously, at least a portion of the target color light emitted by the light-emitting unit, after being focused by the lens unit but not converted in color by the color conversion unit, can be reflected back into the color conversion unit by the reflective unit and converted again by the color conversion unit. This improves the utilization rate of the light emitted by the light-emitting unit and enhances the light-emitting effect of the light-emitting component. Attached Figure Description

[0063] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0064] Figure 1 This is a schematic diagram of the structure of a light-emitting component provided in an embodiment of this application;

[0065] Figure 2 This is a schematic diagram of the current efficiency as a function of viewing angle provided in an embodiment of this application;

[0066] Figure 3 This is a top view of a lens and color conversion section provided in an embodiment of this application;

[0067] Figure 4 This is a schematic diagram of another light-emitting component provided in an embodiment of this application;

[0068] Figure 5 This is a top view of a lens, color conversion unit, and light-emitting unit provided in an embodiment of this application;

[0069] Figure 6 This is a cross-sectional view of a lens, a color conversion section, and a light-emitting unit provided in an embodiment of this application;

[0070] Figure 7 This is a schematic diagram showing that the line connecting the edge of a lens and the edge of the light-emitting surface of a light-emitting unit passes through the focal point, according to an embodiment of this application.

[0071] Figure 8 This is a top view of another lens, color conversion unit, and light-emitting unit provided in an embodiment of this application;

[0072] Figure 9 This is a cross-sectional view of another lens, color conversion section, and light-emitting unit provided in an embodiment of this application;

[0073] Figure 10 This is a schematic diagram of the structure of another light-emitting component provided in the embodiments of this application;

[0074] Figure 11 This is a schematic diagram of an incident light beam being reflected by the sidewall of the dam layer near the opening area, and the outgoing light beam illuminating the reflecting part, according to an embodiment of this application.

[0075] Figure 12 This is a schematic diagram of another light-emitting component provided in the embodiments of this application;

[0076] Figure 13 This is a schematic diagram of another light-emitting component provided in the embodiments of this application;

[0077] Figure 14 This is a schematic diagram of another light-emitting component provided in the embodiments of this application;

[0078] Figure 15 This is a schematic diagram of another light-emitting component provided in the embodiments of this application;

[0079] Figure 16 This is a schematic diagram of a lens-wrapping film pattern provided in an embodiment of this application;

[0080] Figure 17 This is a schematic diagram of a first semiconductor layer provided in an embodiment of this application;

[0081] Figure 18 The light-emitting component provided in this application embodiment is along Figure 17 A cross-sectional view along the AA' direction;

[0082] Figure 19The light-emitting component provided in this application embodiment is along Figure 17 A cross-sectional view along the BB' direction in the middle;

[0083] Figure 20 The light-emitting component provided in this application embodiment is along Figure 17 A cross-sectional view along the CC' direction;

[0084] Figure 21 This is a flowchart illustrating a method for fabricating a light-emitting component according to an embodiment of this application;

[0085] Figure 22 This is a schematic diagram of the structure of a color transfer substrate provided in an embodiment of this application;

[0086] Figure 23 This is a schematic diagram of a method for preparing a color transfer substrate according to an embodiment of this application;

[0087] Figure 24 This is a flowchart of obtaining an initial light-emitting substrate provided in an embodiment of this application;

[0088] Figure 25 This is a schematic diagram of a first semiconductor thin film, a light-emitting thin film, a second semiconductor thin film, and a current-diffusing thin film formed on one side of a first temporary substrate, according to an embodiment of this application.

[0089] Figure 26 This is a schematic diagram of a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a current spreading layer for obtaining a light-emitting unit, provided in an embodiment of this application.

[0090] Figure 27 This is a schematic diagram of forming a connecting electrode according to an embodiment of this application;

[0091] Figure 28 This is a schematic diagram of forming an insulating layer according to an embodiment of this application;

[0092] Figure 29 This is a schematic diagram of forming a first electrode and a second electrode according to an embodiment of this application;

[0093] Figure 30 This is a schematic diagram of forming a second temporary substrate on the side of the light-emitting unit away from the first temporary substrate, according to an embodiment of this application.

[0094] Figure 31 This is a schematic diagram illustrating the removal of a first temporary substrate from a light-emitting unit, provided in an embodiment of this application.

[0095] Figure 32 This is a schematic diagram of forming an anti-crosstalk layer according to an embodiment of this application;

[0096] Figure 33 This is a schematic diagram of an auxiliary layer formed according to an embodiment of this application;

[0097] Figure 34 This is a schematic diagram of a lens formation provided in an embodiment of this application;

[0098] Figure 35 This is a schematic diagram of forming a lens planarization layer according to an embodiment of this application;

[0099] Figure 36 This is a schematic diagram illustrating the connection of a light-emitting unit and a color conversion unit according to an embodiment of this application;

[0100] Figure 37 This is a schematic diagram illustrating the removal of a second temporary substrate according to an embodiment of this application;

[0101] Figure 38 This is a schematic diagram of the structure of a display substrate provided in an embodiment of this application;

[0102] Figure 39 This is a top view of a display substrate provided in an embodiment of this application. Detailed Implementation

[0103] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0104] Figure 1 This is a schematic diagram of the structure of a light-emitting component provided in an embodiment of this application. (Reference) Figure 1 The light-emitting component 100 includes: a substrate 101, a color conversion unit 102, a lens unit 103, and a light-emitting unit 104.

[0105] The color conversion unit 102 is located on one side of the substrate 101. The color conversion unit 102 includes a reflective portion 1021 and a color conversion portion 1022 disposed in a direction away from the substrate 101. The color conversion portion 1022 is used to convert light of a target color emitted by the light-emitting unit 104 into light of other colors.

[0106] The lens unit 103 includes a lens 1031 and a lens planarization layer 1032 located on the side of the lens 1031 near the substrate 101. The orthographic projection of the lens 1031 on the substrate 101 overlaps with the orthographic projection of the color conversion unit 1022 on the substrate 101. The lens unit 103 is used to converge the light emitted by the light-emitting unit 104.

[0107] The orthographic projection of the light-emitting unit 104 on the substrate 101 overlaps with the orthographic projection of the color conversion unit 1022 on the substrate 101. The light of the target color emitted by the light-emitting unit 104 is focused by the lens unit 103 and converted by the color conversion unit 1022 before being emitted from the reflector 1021.

[0108] In this embodiment, during the process of the color conversion unit 1022 converting the light of the target color emitted by the light-emitting unit 104, some of the target color light can be converted into other colors, while other parts of the target color light may not be converted. That is, after the target color light emitted by the light-emitting unit 104 passes through the color conversion unit 1022, some of the target color light may not be converted into other colors by the color conversion unit 1022, which will affect the utilization rate of the light emitted by the light-emitting unit 104.

[0109] Therefore, the reflective part 1021 in the color conversion unit 102 can reflect the light of the target color that has not been converted back to the color conversion unit 1022, so that the color conversion unit 1022 can convert the light of the target color that has not been converted again, thereby improving the utilization rate of the light emitted by the light-emitting unit 104.

[0110] Optionally, the reflective portion 1021 in the color conversion unit 102 can be used to reflect light of the target color at an angle less than or equal to the first normal X1. The first normal X1 is perpendicular to the surface of the reflective portion 1021 away from the substrate 101. The target angle can be the angle with the largest angle between the target color light that the reflective portion 1021 can reflect and the first normal X1.

[0111] Alternatively, it can be understood that the reflective portion 1021 can reflect light rays with a relatively small angle to the first normal X1. Therefore, to further improve the utilization rate of light, a lens unit 103 can be provided in the light-emitting component 100 to converge the light of the target color emitted by the light-emitting unit 104, so that the light can be directed from a direction close to the normal viewing angle to the surface of the reflective portion 1021 away from the substrate 101, so that the reflective portion 1021 can effectively reflect the light of the target color that has not been converted by the color conversion unit 1022. The normal viewing angle can refer to the direction close to the first normal X1.

[0112] In summary, this application provides a light-emitting component, which includes a substrate, a color conversion unit, a lens unit, and a light-emitting unit. Light of the target color emitted by the light-emitting unit is focused by the lens unit and converted in color by the color conversion unit before exiting through a reflective unit. Simultaneously, at least a portion of the target color light emitted by the light-emitting unit that is focused by the lens unit but not converted in color by the color conversion unit can be reflected back into the color conversion unit by the reflective unit and can be converted again by the color conversion unit, thereby improving the utilization rate of the light emitted by the light-emitting unit and enhancing the light-emitting effect of the light-emitting component.

[0113] refer to Figure 2 It can be seen that by setting the lens 1031 on the light-emitting side of the light-emitting unit 104, the forward brightness (both left and right viewing angles are less than or equal to 30°) can be significantly improved compared to not setting the lens 1031, while the light intensity emitted by viewing angles greater than 30° is reduced. This indicates that the lens 1031 can focus large-angle light into small-angle light, which is beneficial for the reflection of the target color light by the reflector 1021.

[0114] Figure 3 This is a top view of a lens and color conversion unit provided in an embodiment of this application. (Reference) Figure 3 The orthographic projection of lens 1031 onto substrate 101 is circular. The orthographic projection of color conversion unit 1022 onto substrate 101 is rectangular. The diameter of the circle can be greater than or equal to the width of the orthographic projection of color conversion unit 1022 onto substrate 101, and less than or equal to the length of the diagonal of the orthographic projection of color conversion unit 1022 onto substrate 101. Figure 3 The circle labeled 1031a represents the orthographic projection of the smallest diameter lens 1031 onto the substrate 101, and the circle labeled 1031b represents the orthographic projection of the largest diameter lens 1031 onto the substrate 101.

[0115] Since the diameter of the circle is greater than or equal to the width of the orthographic projection of the color conversion unit 1022 onto the substrate 101, it can be ensured that the light emitted from the lens 1031 can effectively enter the color conversion unit 1022, avoiding insufficient excitation of the light emitted from the lens 1031 by the color conversion unit 1022, which would affect the gain effect of the lens 1031 on the light. Furthermore, since the diameter of the circle is less than or equal to the diagonal length of the orthographic projection of the color conversion unit 1022 onto the substrate 101, the light will form an excessively large spot on the surface of the color conversion unit 1022, reducing display resolution and color purity.

[0116] Figure 4 This is a schematic diagram of another light-emitting component provided in an embodiment of this application. (Reference) Figure 4The light-emitting component 100 includes a plurality of light-emitting units 104. The lens unit 103 includes a plurality of lenses 1031 corresponding to the plurality of light-emitting units 104. The orthographic projection of each lens 1031 onto the substrate 101 overlaps with the orthographic projection of the corresponding light-emitting unit 104 onto the substrate 101. The diameter of the circle of the orthographic projection of the lens 1031 onto the substrate 101 also satisfies the condition that the interval P between two adjacent lenses 1031 is less than or equal to the minimum design size of the interval.

[0117] Optionally, the maximum diameter of the orthographic projection of the lens 1031 onto the substrate 101 is limited by the diagonal length of the orthographic projection of the color conversion section 1022 onto the substrate 101, and also by the spacing requirements of the lens 1031 fabrication process.

[0118] Alternatively, it can be understood that the maximum diameter of the orthogonal projection of the color conversion unit 1022 onto the substrate 101 can be determined based on the smaller value between the diagonal length of the orthogonal projection of the color conversion unit 1022 onto the substrate 101 and the minimum design size of the spacing required by the manufacturing process of the lens 1031.

[0119] Optionally, the minimum design size for the spacing can be greater than or equal to 5 micrometers (μm).

[0120] Optional, see reference Figure 5 In the light-emitting component 100, the orthographic projection of the color conversion unit 1022 onto the substrate 101 is rectangular, with a side length of 80 μm. The diameter C of the orthographic projection of the lens 1031 onto the substrate 101 can be equal to the side length of the orthographic projection of the color conversion unit 1022 onto the substrate 101. The width F of the orthographic projection of the light-emitting unit 104 onto the substrate 101 can be 50 μm, and the distance E between the edge of the orthographic projection of the light-emitting unit 104 onto the substrate 101 and the edge of the orthographic projection of the color conversion unit 1022 onto the substrate 101 is 15 μm. The distance D between the orthographic projections of the two color conversion units 1022 corresponding to two adjacent light-emitting units 104 onto the substrate 101 can be 25 μm.

[0121] In the embodiments of this application, reference is made to Figure 1 and Figure 4 The light-emitting unit 104 includes a first semiconductor layer 1041 and a light-emitting functional layer 104a located on the side of the first semiconductor layer 1041 away from the substrate 101. The first semiconductor layer 1041 may include a first sub-layer m1 and a second sub-layer m2 stacked along a direction close to the substrate 101. The light-emitting functional layer 104a includes a light-emitting layer 1042 and a second semiconductor layer 1043 stacked along a direction away from the substrate 101.

[0122] Optional, see reference Figure 1 and Figure 4The light-emitting component 100 further includes an anti-crosstalk layer 105 located between the lens unit 103 and the light-emitting unit 104. The refractive index of the anti-crosstalk layer 105 may be less than the refractive index of the film layer in the light-emitting unit 104 near the anti-crosstalk layer 105. The film layer in the light-emitting unit 104 near the anti-crosstalk layer 105 is the first semiconductor layer 1041 in the light-emitting unit 104. The refractive index of the anti-crosstalk layer 105 may be less than the refractive index of a portion of the material in the first semiconductor layer 1041 near the anti-crosstalk layer 105; for example, the refractive index of the anti-crosstalk layer 105 may be less than the refractive index of the second sublayer m2 in the first semiconductor layer 1041.

[0123] The anti-crosstalk layer 105 functions effectively by confining the light emitted by the light-emitting unit 104 within the second sub-layer m2, preventing it from reaching the location of adjacent light-emitting units 104. Therefore, the refractive index of the anti-crosstalk layer 105 must ensure that light originally destined for adjacent light-emitting units 104 undergoes total internal reflection at the interface between the second sub-layer m2 and the anti-crosstalk layer 105.

[0124] Since the thickness of the second sublayer m2 is much greater than the thickness of other film layers between the light-emitting surface of the light-emitting unit 104 and the anti-crosstalk layer 105, its structure can be simplified to calculate the required refractive index of the anti-crosstalk layer 105.

[0125] Optional, see reference Figure 5 and Figure 6 The critical angle δ′ for total internal reflection when light strikes the interface between the second sub-layer m2 and the anti-crosstalk layer 105 is δ′ = arcsin(n2 / n1). Here, n1 is the refractive index of the film layer near the anti-crosstalk layer 105 in the light-emitting unit 104, for example, n1 is the refractive index of the second sub-layer m2 in the first semiconductor layer 1041 of the light-emitting unit 104. n2 is the refractive index of the anti-crosstalk layer 105. If the light originally illuminating the location of an adjacent light-emitting unit 104 undergoes total internal reflection at the interface between the second sub-layer m2 and the anti-crosstalk layer 105, it can be ensured that the light emitted by the light-emitting unit 104 will not illuminate the location of the adjacent light-emitting unit 104. Therefore, this condition is used to limit the refractive index n2 of the anti-crosstalk layer 105.

[0126] In this case, the refractive index n2 of the anti-crosstalk layer 105 can satisfy: n2 ≤ n1 * sinδ′. Here, the critical angle δ′ for total internal reflection can be the acute angle between the target connection line L and the target normal S. The target connection line L is the line connecting the boundary of the emitting surface of one emitting unit 104 near the boundary of another adjacent emitting unit 104, and the boundary of the orthographic projection of the lens 1031 corresponding to the other adjacent emitting unit 104 onto the anti-crosstalk layer 105 near the boundary of one emitting unit 104. The target normal S is perpendicular to the surface of the anti-crosstalk layer 105.

[0127] Optionally, the light-emitting surface of the light-emitting unit 104 can refer to the surface of the light-emitting layer 1042 of the light-emitting unit 104 that is close to or away from the substrate 101, or any cross section of the light-emitting layer 1042 parallel to the substrate 101. The derivation process of this application embodiment takes the light-emitting surface of the light-emitting unit 104 as the surface of the light-emitting layer 1042 of the light-emitting unit 104 that is close to the substrate 101 as an example.

[0128] It should be noted that since the anti-crosstalk layer 105 can be relatively thin, the boundary of the orthographic projection of lens 1031 onto the anti-crosstalk layer 105 can be approximated as the boundary of lens 1031. If total internal reflection occurs at the interface between the second sub-layer m2 and the anti-crosstalk layer 105, it can be approximated that the light from the light-emitting unit 104 will not crosstalk to the location of the adjacent light-emitting unit 104.

[0129] Optionally, the refractive index n1 of the second sublayer m2 in the first semiconductor layer 1041 is approximately n1 = 2.7. According to the formula for the refractive index n2 of the anti-crosstalk layer 105, n2 ≤ 2.7 * sinδ′. Considering that the refractive index of conventional films is generally greater than 1.4, the refractive index n2 of the anti-crosstalk layer 105 can range from 1.4 to 2.7 * sinδ′.

[0130] refer to Figure 5 and Figure 6 θ can satisfy:

[0131]

[0132] In formula (1), θ is the angle between the incident ray from the second sublayer to the anti-crosstalk layer and the surface of the second sublayer m2 away from the substrate 101. δ is the angle between the incident ray from the second sublayer to the anti-crosstalk layer and the target normal. Angle θ = 90° - δ. The maximum value of θ, θ′, can be the acute angle between the target line L and the surface of the second sublayer m2 away from the substrate 101. If the light does not undergo total internal reflection at the interface between the second sublayer and the anti-crosstalk layer, then δ < δ′. If the light undergoes total internal reflection at the interface between the second sublayer and the anti-crosstalk layer, then δ ≥ δ′.

[0133] In other words, if the angle δ between the incident light ray from the second sub-layer to the anti-crosstalk layer and the target normal is greater than the critical angle δ′ for total internal reflection, total internal reflection can occur. For example... Figure 6 When the incident light shines on the location of another adjacent light-emitting unit 104, the angle δ1 between the incident light and the target normal is greater than the critical angle δ′ for total internal reflection, which ensures that total internal reflection occurs, thereby preventing crosstalk of the light from the light-emitting unit 104 to the location of the other adjacent light-emitting unit 104. Additionally, as... Figure 6 When the incident light does not illuminate the location of the other light-emitting unit 104, the angle δ2 between the incident light and the target normal is less than the critical angle δ′ for total internal reflection, which allows the light to exit normally.

[0134] Furthermore, in formula (1), b is the distance between the light-emitting surface of the light-emitting unit 104 and the side of the anti-crosstalk layer 105 closest to the light-emitting unit 104. D is the distance between adjacent lenses 1031. E is the distance between the boundary of the light-emitting surface of the light-emitting unit 104 and the boundary of the lens 1031 corresponding to the light-emitting unit 104. Since the thickness of the anti-crosstalk layer 105 can be relatively thin, b can also be approximated as the distance between the light-emitting surface of the light-emitting unit 104 and the side of the lens 1031 closest to the light-emitting unit 104.

[0135] In this embodiment, an analysis of the structure of lens 1031 reveals that as the light-emitting surface of the light-emitting unit 104 gradually moves from the side of lens 1031 away from substrate 101 towards the focal point of lens 1031, the positive brightness gain of the light emitted by lens 1031 from light-emitting unit 104 gradually increases. When the line connecting the edge of the light-emitting surface of light-emitting unit 104 and the edge of lens 1031 just passes through the focal point, lens 1031 can achieve the maximum positive brightness gain for the light emitted by light-emitting unit 104.

[0136] Optional, see reference Figure 7 According to the similarity theorem of triangles, the distance f between the focal point of lens 1031 and the side of lens 1031 away from substrate 101 (referred to as focal length), the width F of the orthographic projection of the light-emitting surface of light-emitting unit 104 onto substrate 101, the width C of the orthographic projection of lens 1031 onto substrate 101, and the distance b between the light-emitting surface and the side of anti-crosstalk layer 105 near light-emitting unit 104 satisfy the following:

[0137]

[0138] Based on the above formula (1), it can be deduced that b satisfies:

[0139] b = f - fF / C Formula (3)

[0140] Furthermore, the focal length f of lens 1031 can satisfy: f = r / Δn; where r is the equivalent radius of curvature of lens 1031, and Δn is the difference between the refractive index of lens 1031 and the refractive index of lens planarization layer 1032. The equivalent radius of curvature of lens 1031 refers to the radius of curvature of the curved surface position passing through the principal optical axis of lens 1031. For example, for an axisymmetric lens 1031, the principal optical axis can coincide with the axis of symmetry of lens 1031; for example, the principal optical axis is a straight line passing through the centroid of lens 1031 and parallel to the thickness direction of the lens.

[0141] Optionally, the surface of the lens 1031 near the substrate 101 can be a curved surface, where the curvature at any position can be equal or unequal. If the curvature is equal at any position on the curved surface, the equivalent radius of curvature of the lens 1031 can be the radius of curvature at any position on the surface of the lens 1031 near the substrate 101. If the curvature is unequal at any position on the curved surface, the equivalent radius of curvature of the lens 1031 can be the radius of curvature at the center position of the surface of the lens 1031 near the substrate 101.

[0142] Optionally, the equivalent radius of curvature r can satisfy:

[0143] r=(H 2 +(C / 2) 2 Formula (4) / 2H

[0144] In formula (4), H is the arch height of lens 1031.

[0145] In this embodiment, given the known arch height of lens 1031 and the width C of its orthographic projection onto substrate 101, the equivalent radius of curvature r of lens 1031 can be calculated based on these dimensions. Then, the focal length f of lens 1031 is calculated based on the equivalent radius of curvature r. Finally, the distance b between the emitting surface and the side of anti-crosstalk layer 105 closest to the emitting unit 104 is calculated based on the focal length f. Therefore, in structural design, the distance between the emitting surface and the side of anti-crosstalk layer 105 closest to the emitting unit 104 can be designed based on the calculated distance b, so that lens 1031 can obtain the maximum positive brightness gain for the light emitted from emitting unit 104. Simultaneously, the angle θ′ is determined based on distance b, distance D, and distance E, and the critical angle δ′ for total internal reflection is determined based on angle θ′. The refractive index of the anti-crosstalk layer can then be determined based on the critical angle of total internal reflection δ′, allowing for the selection of a material that meets the refractive index requirements to prevent light crosstalk. The sum of angle θ′ and the critical angle of total internal reflection δ′ is equal to 90°, i.e., θ′ + δ′ = 90°.

[0146] Alternatively, given the distance *b* between the emitting surface and the side of the anti-crosstalk layer 105 closest to the emitting unit 104, the maximum angle θ can be determined based on distances *b*, *D*, and *E*, and then the critical angle δ′ for total internal reflection can be determined based on the maximum angle θ. The refractive index of the anti-crosstalk layer can then be determined based on the critical angle δ′. Simultaneously, the focal length *f* of the lens can be obtained from distance *b*, and the equivalent radius of curvature of the lens can be determined based on the focal length *F*. The camber *H* of the lens can then be determined based on the equivalent radius of curvature of lens 1031. This allows lens 1031 to obtain the maximum positive brightness gain for the light emitted from the emitting unit 104, and the material of the anti-crosstalk layer that meets the refractive index requirements can be selected based on the determined refractive index of the anti-crosstalk layer to avoid light crosstalk.

[0147] In this embodiment of the application, in order to determine the range of values ​​for the refractive index of the anti-crosstalk layer 105, the maximum value of sinθ can be calculated. Based on the above formulas (1) to (4), the following can be derived:

[0148]

[0149] That is, sinθ can be calculated based on the arch height H of lens 1031, the width C of the orthographic projection of lens 1031 on substrate 101, the difference Δn between the refractive index of lens 1031 and the refractive index of lens planarization layer 1032, the width F of the orthographic projection of the light-emitting surface of light-emitting unit 104 on substrate 101, the distance D between adjacent lenses 1031, and the distance E between the boundary of the light-emitting surface of light-emitting unit 104 and the boundary of the lens 1031 corresponding to light-emitting unit 104.

[0150] Optional, see reference Figure 8 and Figure 9 Assuming the diameter of lens 1031 is equal to the side length of color conversion part 1022, and the side length of color conversion part 1022 is 80μm, the equivalent radius of curvature of lens 1031 is 40μm. Assuming Δn is 0.3, according to the formula for calculating the focal length f of lens 1031, f = r / Δn, the focal length f = 133 is determined. Assuming the width F of the orthogonal projection of the light-emitting surface of light-emitting unit 104 onto substrate 101 is 50μm, and the width C of the orthogonal projection of lens 1031 onto substrate 101 is 80μm, the distance b between the light-emitting surface and the side of anti-crosstalk layer 105 near light-emitting unit 104 is approximately 50μm according to the above formula (3).

[0151] Assume the distance D between adjacent lenses 1031 is 25 μm. The distance E between the boundary of the light-emitting surface of the light-emitting unit 104 and the boundary of the lens 1031 corresponding to the light-emitting unit 104 is 15 μm. According to the above formula (1), the maximum value θ′ is approximately 51.34°. Correspondingly, the critical angle δ′ for total internal reflection when light is incident from the second sublayer m2 to the anti-crosstalk layer 105 is approximately 90°-51.34°=38°. If total internal reflection is desired, assuming the refractive index n1 of the second sublayer m2 is 2.7, then according to the formula for the critical angle for total internal reflection δ′=arcsin(n2 / n1), it can be determined that the refractive index of the anti-crosstalk layer 105 should be less than 1.7. For example, the anti-crosstalk layer 105 can be an inorganic film layer prepared by chemical vapor deposition (CVD) process. For example, the material of the anti-crosstalk layer 105 can be silicon oxide (SiO), and the refractive index of silicon oxide is approximately 1.42, which meets the requirement that the refractive index is less than 1.7.

[0152] In this embodiment, the anti-crosstalk layer 105 can be made of inorganic materials, organic materials, or composite materials. Inorganic materials can be silicon-containing materials, nitrogen-containing materials, or oxygen-containing materials. Organic materials can be resins. Composite materials can include at least two different materials.

[0153] Optionally, the material of the anti-crosstalk layer 105 may include at least one of silicon oxide, silicon nitride, silicon oxynitride, acrylic resin, carbonate, and polyurethane resin.

[0154] For example, the anti-crosstalk layer is made of silicon oxide with an included angle δ′ greater than 33°. The anti-crosstalk layer is made of silicon nitride with an included angle δ′ greater than 48°. The anti-crosstalk layer is made of silicon oxynitride with an included angle δ′ greater than 33°. The anti-crosstalk layer is made of acrylic resin with an included angle δ′ greater than 34°. The anti-crosstalk layer is made of carbonate with an included angle δ′ greater than 36°. The anti-crosstalk layer is made of polyurethane resin with an included angle δ′ greater than 32°.

[0155] In the embodiments of this application, reference is made to Figure 1 and Figure 4 The color conversion unit 102 further includes a light-shielding layer 1023 and a defining dam layer 1024 sequentially disposed along a direction away from the substrate 101. The light-shielding layer 1023 includes a light-transmitting aperture K, and the defining dam layer 1024 is located on the side of the light-shielding layer 1023 away from the substrate 101, and the defining dam layer 1024 includes an opening region Q. The orthographic projection of the opening region Q onto the substrate 101 overlaps with the orthographic projection of the light-transmitting aperture K onto the substrate 101. At least a portion of the reflective portion 1021 is located within the light-transmitting aperture K, and at least a portion of the color conversion portion 1022 is located within the opening region K.

[0156] Optionally, the light-emitting component 100 may include a plurality of light-emitting units 104. The plurality of light-emitting units 104 include a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit. The first, second, and third light-emitting units are all used to emit light of a target color. For example, the light-emitting component 100 may have red sub-pixels (red, R), green sub-pixels (green, G), and blue sub-pixels (blue, B). The target color light emitted by the first, second, and third light-emitting units all includes at least one of blue light and ultraviolet light.

[0157] Optionally, the light-shielding layer 1023 has multiple light-transmitting holes K. (See reference) Figure 4 The plurality of light-transmitting holes K include: a first light-transmitting hole K1, a second light-transmitting hole K2, and a third light-transmitting hole K3. The first light-transmitting hole K1 is configured corresponding to the first light-emitting unit, the second light-transmitting hole K2 is configured corresponding to the second light-emitting unit, and the third light-transmitting hole K3 is configured corresponding to the third light-emitting unit.

[0158] Optionally, the orthographic projection of each light-transmitting aperture K on the substrate 101 can overlap with the orthographic projection of the corresponding light-emitting unit 104 on the substrate 101. For example, the orthographic projection of the light-emitting unit 104 on the substrate 101 can be located within the orthographic projection of the corresponding light-transmitting aperture K on the substrate 101.

[0159] Optionally, the orthographic projection of the first light-emitting aperture K1 on the substrate 101 may overlap with the orthographic projection of the first light-emitting unit on the substrate 101. For example, the orthographic projection of the first light-emitting unit on the substrate 101 is located within the orthographic projection of the first light-emitting aperture K1 on the substrate 101.

[0160] The orthographic projection of the second light-emitting aperture K2 on the substrate 101 can overlap with the orthographic projection of the second light-emitting unit on the substrate 101. For example, the orthographic projection of the second light-emitting unit on the substrate 101 is located within the orthographic projection of the second light-emitting aperture K2 on the substrate 101.

[0161] The orthographic projection of the third light-emitting aperture K3 on the substrate 101 can overlap with the orthographic projection of the third light-emitting unit on the substrate 101. For example, the orthographic projection of the third light-emitting unit on the substrate 101 is located within the orthographic projection of the third light-emitting aperture K3 on the substrate 101.

[0162] Optionally, the color conversion unit 102 includes a plurality of reflective portions 1021, including a first reflective portion 1021a and a second reflective portion 1021b. The orthographic projection of the first reflective portion 1021a onto the substrate 101 overlaps with the orthographic projection of the first light-transmitting aperture K1 onto the substrate 101, and is correspondingly disposed with the first light-emitting unit. The orthographic projection of the second reflective portion 1021b onto the substrate 101 overlaps with the orthographic projection of the second light-transmitting aperture K2 onto the substrate 101, and is correspondingly disposed with the second light-emitting unit. Optionally, the color conversion unit 102 also includes a first transparent portion 1025, the orthographic projection of the first transparent portion 1025 onto the substrate 101 overlaps with the orthographic projection of the third light-transmitting aperture K3 onto the substrate 101, and is correspondingly disposed with the third light-emitting unit.

[0163] Optionally, the defining dam layer 1024 in the color conversion unit 102 may have multiple opening regions Q. Each of the multiple opening regions Q in the defining dam layer 1024 corresponds one-to-one with a multiple light-transmitting hole K in the light-shielding layer 1023. The orthographic projection of each opening region Q in the defining dam layer 1024 onto the substrate 101 may overlap with the orthographic projection of the corresponding light-transmitting hole K onto the substrate 101. For example, the light-emitting side of each light-emitting unit 104 may face the corresponding opening region Q, and the orthographic projection of each light-emitting unit 104 onto the substrate 101 may lie within the orthographic projection of the corresponding opening region Q onto the substrate 101. The light-emitting side of each light-emitting unit 104 may face the corresponding opening region Q, and the orthographic projection of each light-emitting unit 104 onto the substrate 101 may lie within the orthographic projection of the corresponding opening region Q onto the substrate 101.

[0164] refer to Figure 4 The multiple opening regions Q in the defined dam layer 1024 may include: a first opening region Q1, a second opening region Q2, and a third opening region Q3. The first opening region Q1 may be positioned opposite to a first light-emitting unit, the second opening region Q2 may be positioned opposite to a second light-emitting unit, and the third opening region Q3 may be positioned opposite to a third light-emitting unit.

[0165] Optionally, the color conversion unit 102 includes a plurality of color conversion sections 1022. The plurality of color conversion sections 1022 includes a first color conversion section 1022a, a second color conversion section 1022b, and a third color conversion section 1022c. The first color conversion section 1022a may be located within a first opening region Q1, the second color conversion section 1022b may be located within a second opening region Q2, and the third color conversion section 1022c may be located within a third opening region Q3.

[0166] In this configuration, light of the target color emitted by the first light-emitting unit can be directed to the first color conversion unit 1022a, where it is converted into light of another color (e.g., into light of the first color). Light of the target color emitted by the second light-emitting unit can be directed to the second color conversion unit 1022b, where it is converted into light of yet another color (e.g., into light of the second color). Light of the target color emitted by the third light-emitting unit can be directed to the third color conversion unit 1022c, where it can pass through or be converted into light of the third color. When the target color light passes through the third color conversion unit 1022c, the third color conversion unit 1022c can be a second transparent portion.

[0167] The first color conversion unit 1022a is used to convert light of the target color into red light (the red light can be light of the first color). For example, the first color conversion unit 1022a includes red quantum dots (QDs) that convert the target color light into red light; preferably, the first color conversion unit 1022a also includes scattering particles for scattering the light. After the target color light emitted by the first light-emitting unit is incident on the first color conversion unit 1022a distributed within the first opening region Q1, the red quantum dots convert the target color light into red light, and the scattering particles scatter both the target color light and the red light, ensuring that more target color light can be converted into red light by the red quantum dots, and ensuring that the converted red light has a large emission angle, thereby ensuring a large viewing angle for the display substrate 101 with the integrated light-emitting components. Therefore, the red sub-pixel R in the light-emitting component can include: a first light-emitting unit, a first color conversion unit 1022a, and a first reflective unit 1021a.

[0168] The second color conversion unit 1022b is used to convert light of the target color into green light (the green light can be light of a second color). For example, the second color conversion unit 1022b includes green quantum dots that convert the target color light into green light; preferably, the second color conversion unit 1022b also includes scattering particles for scattering the light. Here, after the target color light emitted by the second light-emitting unit is incident on the second color conversion unit 1022b distributed within the second opening region Q2, the green quantum dots convert the target color light into green light, and the scattering particles scatter both the target color light and the green light, ensuring that more target color light can be converted into green light by the green quantum dots, and ensuring that the converted green light has a large emission angle, thereby ensuring a large viewing angle for the display substrate 101 with the integrated light-emitting component. Therefore, the green sub-pixel G in the light-emitting component can include: a second light-emitting unit, a second color conversion unit 1022b, and a second filter unit.

[0169] The third color conversion unit 1022c is used to convert the target color light into blue light of another wavelength (blue light can refer to the third color light) or maintain blue light emission. For example, when the target color light only contains blue light, the third color conversion unit 1022c can be a transparent part or can include blue quantum dots; wherein, the transparent part is used for direct transmission of the target color light, and the blue quantum dots can be used to convert the target color light into blue light with a different wavelength than the target color light. Preferably, the third color conversion unit 1022c also includes scattering particles that scatter light. Here, after the target color light emitted by the third light-emitting unit is incident on the third color conversion unit 1022c distributed in the third opening region Q3, the scattering particles can scatter the target color light to ensure a large blue light emission angle, thereby ensuring a large viewing angle for the display substrate 101 with integrated light-emitting components. For example, when the target color light contains ultraviolet light, the third color conversion unit 1022c includes blue quantum dots that convert the target color light into blue light, or the third color conversion unit 1022c simultaneously contains scattering particles for scattering light and blue quantum dots for converting ultraviolet light into blue light. Here, after the target color light emitted by the third light-emitting unit is incident on the third color conversion unit 1022c distributed in the third opening region Q3, the ultraviolet light in the target color light can be converted into blue light by the blue quantum dots, and the scattering particles can scatter the target color light and the blue light, so as to ensure that more ultraviolet light is converted into blue light by the blue quantum dots, and to ensure that the emitted angle of the converted blue light is large, so as to ensure that the display substrate 101 integrating the light-emitting component has a large viewing angle. For this purpose, the blue sub-pixel B in the light-emitting component may include: a third light-emitting unit, a third color conversion unit 1022c (the third color conversion unit may be a second transparent part), and a first transparent part 1025.

[0170] The first transparent portion 1025 and the second transparent portion can be made of the same material and formed using the same process.

[0171] In this embodiment, the light of the target color emitted by the first light-emitting unit is converted into the first color by the first color conversion unit 1022a and can be emitted from the reflection unit 1021. The light of the target color that is not converted by the first color conversion unit 1022a and has an angle with the first normal X1 that is less than or equal to the target angle is reflected back to the first color conversion unit 1022a by the first reflection unit 1021a. The first color conversion unit 1022a can convert the reflected target color light.

[0172] The target color light emitted by the second light-emitting unit is converted into a second color by the second color conversion unit 1022b and can then be emitted from the reflector 1021. Among the target color light that is not converted by the second color conversion unit 1022b, the target color light whose angle with the first normal X1 is less than or equal to the target angle is reflected back to the second color conversion unit 1022b by the second reflector 1021b. The second color conversion unit 1022b can convert the reflected target color light.

[0173] Taking the third color conversion unit 1022c as the second transparent part as an example, the light of the target color emitted by the third light-emitting unit is emitted after passing through the third color conversion unit 1022c and the first transparent part 1025.

[0174] In this embodiment, the target color can be blue. The reflective portion 1021 may include a first dielectric layer and a second dielectric layer. The first dielectric layer and the second dielectric layer are alternately stacked once or more. For example, the first dielectric layer and the second dielectric layer are alternately stacked twice. Alternatively, the first dielectric layer and the second dielectric layer are alternately stacked ten times. The reflective portion 1021 can be used to transmit red and green light, and to block blue light from passing through. Optionally, the reflective portion 1021 can be used to reflect blue light with an angle less than or equal to the target angle between itself and the first normal X1. Optionally, the target angle can be 20°.

[0175] Optionally, the first dielectric layer can be made of Nb₂O₅ (niobium pentoxide), and the second dielectric layer can be made of SiO₂ (silicon dioxide). The reflective layer formed by alternatingly stacking the first and second dielectric layers one or more times can be a DBR structure. The DBR structure is formed by alternating high-refractive-index and low-refractive-index materials; the materials are not limited to Nb₂O₅ and SiO₂, but can also be organic materials and other inorganic materials.

[0176] Since the DBR structure's ability to reflect light is mainly concentrated on light that is perpendicularly incident on the DBR interface, it can typically only reflect light at the angle with the first normal X1. Light with an angle less than 20°. Although a lens unit 103 is added between the light-emitting unit 104 and the color conversion unit 102 to concentrate the light, it may not be possible to concentrate the light within 20°. Consequently, light entering the color conversion unit 1022 at an angle greater than 20° cannot be reflected by the DBR structure, which will reduce the utilization rate of blue light.

[0177] To further improve the utilization rate of blue light, the sidewall of the defining dam layer 1024 near the opening region can be designed to be non-perpendicular to the DBR structure. For example, the first included angle between the sidewall of the defining dam layer 1024 near the opening region and the side of the defining dam layer 1024 away from the substrate 101 can be an acute angle. For example, the range of the first included angle is 35° to 70°. Here, the side of the defining dam layer 1024 away from the substrate 101 refers to the side of the defining dam layer 1024 that does not have an opening region but has defining dam material away from the substrate 101.

[0178] Optional, see reference Figure 10 The color conversion unit 102 further includes a first reflective layer 1025 located on the sidewall of the defining dam layer 1024 near the opening area. The material of the first reflective layer 1025 includes metal. Light entering the color conversion section 1022 can illuminate the first reflective layer 1025 on the sidewall of the defining dam layer 1024, and the first reflective layer 1025 can reflect the light to the cross section between the color conversion section 1022 and the reflective section 1021.

[0179] Optionally, the material of the first reflective layer 1025 can be a reflective material commonly used in the semiconductor display field, such as Mo (molybdenum) / Al (aluminum) / Mo or Ti (titanium) / Al / Ti. Alternatively, the first reflective layer 1025 can have a thickness greater than... Al (angstroms), or a thickness greater than Å, can be used. Ag. The first reflective layer 1025 can be prepared by sputtering and patterned by photo and etching processes.

[0180] In practical applications, different light sources (such as OLEDs and LEDs) or different light source structures (such as top-emitting and bottom-emitting OLEDs, or upright, flip-chip, and vertical structures of LEDs) will affect the emitted light spectrum of the light source. Therefore, in practical applications, the emitted light spectrum of the light source can be obtained first, and then based on this, the angle range at which the light intensity of the light source is highest can be determined. According to this angle range, the first included angle between the sidewall of the limiting dam layer 1024 near the opening region and the side of the limiting dam layer 1024 away from the substrate 101 can be adjusted to minimize the angle between the range corresponding to the highest intensity spectrum and the first normal X1 of the DBR interface after reflection by the first reflective layer 1025, thereby maximizing the utilization rate of the light emitted by the light source.

[0181] refer to Figure 11 Based on the second angle α between the incident ray and the second normal X2, and defining the first angle β between the sidewall of the dam layer 1024 near the opening region and the side of the dam layer 1024 away from the substrate 101, the incident angle and the exit angle γ = 180° - α - β when the incident ray is reflected at the sidewall of the dam layer 1024 near the opening region are calculated. Further, the angle between the exit ray and the first normal X1 of the reflecting portion 1021... satisfy: In order for the emitted light to be reflected by the reflector 1021, the included angle needs to be made Less than or equal to 20°.

[0182] For example, when α ≤ 90° - β, the incident light cannot reach the sidewall of the limiting dam layer 1024 near the opening area, and therefore cannot change the angle between the outgoing light and the first normal X1 of the reflecting part 1021 through reflection from the sidewall. When α > 90° - β, the incident light can reach the sidewall of the limiting dam layer 1024 near the opening area. Therefore, after determining the first included angle β, this embodiment of the application can determine what angle of incident light the sidewall of the limiting dam layer 1024 near the opening area can reflect.

[0183] Of course, in order for the reflector 1021 to reflect light, the angle between the emitted light and the first normal X1 of the reflector 1021 is... Thus, when α > 90° - β and 160° - 2β < α ≤ 200 - 2β, the incident light can illuminate the sidewall of the defined dam layer 1024 near the opening area, and when it reaches the reflector 1021, the angle between it and the first normal X1 is less than or equal to 20°.

[0184] For example, assuming the first included angle β is 70°, incident light rays with a second included angle α less than 20° cannot reach the sidewall of the limiting dam layer 1024 near the opening area. When the second included angle satisfies 20° < α ≤ 60°, the incident light rays can reach the sidewall of the limiting dam layer 1024 near the opening area, and when reaching the reflecting part 1021, the angle with the first normal X1 is less than or equal to 20°.

[0185] In this embodiment, although the lens 1031 in the lens unit 103 can converge light, due to the relatively thick thickness of the lens unit 103, there is still a risk that light with a wide angle of view may reach the location of the adjacent light-emitting unit 104, based on spectral determination. Therefore, referencing... Figure 12 The lens unit 103 may further include a light-adjusting structure 1033 located at the interval between adjacent lenses 1031. The height of the light-adjusting structure 1033 is greater than or equal to the arch height of the lens 1031, and the light-adjusting structure 1033 can be used to block or reflect light after passing through the lens 1031. The light-adjusting structure 1033 may be fabricated using a patterning process before forming the lens planarization layer 1032.

[0186] Since the height of the light adjustment structure 1033 is greater than or equal to the arch height of the lens 1031, it can be ensured that the light emitted from the lens 1031 can be effectively blocked or reflected by the light adjustment structure 1033, so as to prevent the light emitted by the light-emitting unit 104 from shining on the location of the adjacent light-emitting unit 104 and avoid light crosstalk.

[0187] Optionally, the light adjustment structure 1033 and the lens 1031 can both serve as supports to prevent tilting when the color conversion unit 102 and the light-emitting unit 104 are bonded.

[0188] Optionally, the material of the light adjustment structure 1033 may include a light-shielding material. In this way, when the light emitted by the light-emitting unit 104 shines on the light adjustment structure 1033, it can be blocked by the light adjustment structure 1033.

[0189] Or, refer to Figure 13The light adjustment structure 1033 includes a main body 10331 and a second reflective layer 10332 located on the sidewall of the main body 10331. The material of the second reflective layer 10332 includes metal. Thus, when light emitted from the light-emitting unit 104 shines on the light adjustment structure 1033, it can be reflected by the light adjustment structure 1033, thereby reusing the light reaching the second reflective layer 10332. When the light adjustment structure 1033 includes the second reflective layer 10332, the main body 10331 in the light adjustment structure 1033 can serve a supporting function. The material of the main body 10331 includes a light-shielding material or a transparent material; this embodiment does not limit this.

[0190] Optionally, the material of the second reflective layer 10332 can be a reflective material commonly used in the semiconductor display field. For example, the material of the second reflective layer 10332 may include Mo (molybdenum) / Al (aluminum) / Mo or Ti (titanium) / Al / Ti. Alternatively, the second reflective layer 10332 may have a thickness greater than... Al (angstroms), or a thickness greater than Å, can be used. Ag. The second reflective layer 10332 can be prepared by sputtering and patterned by photo and etching processes.

[0191] In the embodiments of this application, reference is made to Figure 1 , Figure 4 , Figure 10 , Figure 12 and Figure 13 The light-emitting component 100 further includes a bonding adhesive layer 106 located between the color conversion unit 102 and the lens unit 103. The bonding adhesive layer 106 is used to connect the color conversion unit 102 and the light-emitting unit 104. Optionally, the thickness of the bonding adhesive layer 106 is less than or equal to 2 μm.

[0192] Or, refer to Figure 14 The lens planarization layer 1032 in the lens unit 103 can be reused as a bonding adhesive layer 106. The lens planarization layer 1032 is used to connect the color conversion unit 102 and the light-emitting unit 104. In this case, the lens planarization layer 1032 needs to be coated on one side of the light-emitting unit 104 to ensure complete coverage of the lens 1031. At the same time, the thickness of the lens planarization layer 1032 needs to be greater than or equal to the dome height of the lens 1031. If the lens planarization layer 1032 is reused as a bonding adhesive layer 106, even if the thickness of the bonding adhesive layer is large, the lens 1031 and the light adjustment structure 1033 can still provide support, ensuring the bonding effect.

[0193] In the embodiments of this application, reference is made to Figure 4 ,as well as Figure 10 , Figures 12 to 14The second sublayer m2 in the first semiconductor layer 1041 of lens 1031 can be a continuous film layer. Lens unit 103 also includes an auxiliary layer 1034 located on the side of lens 1031 away from substrate 101. Auxiliary layer 1034 is also a continuous film layer. Optionally, auxiliary layer 1034 can be a hydrophobic layer. The hydrophobic layer can create a hydrophilic-hydrophobic gradient boundary, forming an energy barrier to constrain the diffusion of droplets within a specific region, thereby achieving precise forming of the lens 1031 array. That is, auxiliary layer 1034 serves as a pre-processing functional layer for fabricating lens 1031.

[0194] Optionally, the auxiliary layer 1034 can be made of a fluorinated resin. For example, the auxiliary layer 1034 can be made of a fluorinated acrylic resin or polytetrafluoroethylene (PTFE).

[0195] Optionally, the lens 1031 and the second sub-layer m2 are spaced apart in a direction perpendicular to the substrate 101. For example, an anti-crosstalk layer 105 and an auxiliary layer 1034 are provided between the side of the lens 1031 away from the substrate 101 and the side of the second sub-layer m2 near the substrate 101. The spacing between the lens 1031 in a direction perpendicular to the substrate 101 and the second sub-layer m2 in a direction perpendicular to the substrate 101 can be the sum of the thicknesses of the hydrophobic layer and the auxiliary layer 1034.

[0196] Optionally, the surface of the auxiliary layer 1034 near the substrate 101 is planar. The lens 1031 covers a portion of the surface of the auxiliary layer 1034 near the substrate 101. That is, the lens 1031 can be located on the surface of the auxiliary layer 1034 near the substrate 101, and the orthographic projection of the lens 1031 on the substrate 101 lies within the orthographic projection of the auxiliary layer 1034 on the substrate 101.

[0197] In the embodiments of this application, reference is made to Figure 15 and Figure 16 The second sublayer m2 in the first semiconductor layer 1041 of lens 1031 may include a film pattern m21. The orthographic projection of the film pattern m21 onto the substrate 101 lies within the orthographic projection of lens 1031 onto the substrate 101. Lens unit 103 also includes an auxiliary layer 1034 located on the side of lens 1031 away from substrate 101. The auxiliary layer 1034 includes a cutout region, and the orthographic projections of the film pattern m21 onto substrate 101 and the cutout regions onto substrate 101 overlap. The thickness T of the auxiliary layer 1034 is less than the thickness h of the film pattern m21, and the edge of lens 1031 on the side away from substrate 101 contacts the surface of auxiliary layer 1034 near substrate 101.

[0198] Optionally, the auxiliary layer 1034 can be a hydrophobic layer. The hydrophobic layer can create an energy barrier by constructing hydrophilic-hydrophobic gradient boundaries, thus constraining the diffusion of droplets within a specific region and achieving precise shaping of the lens array. In other words, the auxiliary layer 1034 serves as a pre-processing functional layer for fabricating the lens 1031.

[0199] refer to Figure 15 and Figure 16 The orthographic projection of lens 1031 onto substrate 101 covers the orthographic projection of film pattern m21 onto substrate 101, and encloses the surface of film pattern m21 near substrate 101, as well as a portion of the side surface of film pattern m21. In this case, the light of the target color emitted by light-emitting unit 104 can pass through film pattern m21 and then exit from the side of lens 1031 near substrate 101. Film pattern m21 can serve as a uniform optical medium; light incident on and exiting film pattern m21 can reduce light deflection and maintain the direction of light propagation. Simultaneously, film pattern m21 can pre-adjust the angle of incidence of light entering the side of lens 1031 near substrate 101, avoiding total internal reflection or scattering and improving light energy utilization.

[0200] refer to Figure 15 and Figure 16 The side of the film pattern m21 near the substrate 101 includes a film portion protruding from the side of the auxiliary layer 1034 near the substrate 101. The thickness of the film portion can be the difference G between the thicknesses of the film pattern m21 and the auxiliary layer 1034. For the lens 1031 to completely enclose the film portion of the film pattern m21, the thickness difference G between the film pattern m21 and the auxiliary layer 1034 must satisfy:

[0201]

[0202] Where G′ is the maximum value of the difference G between the thickness of the film pattern m21 and the auxiliary layer 1034, r is the equivalent radius of curvature of the lens 1031, and k is the width of the orthographic projection of the film pattern m21 onto the substrate 101. The above formula (5) is derived from the Pythagorean theorem.

[0203] Furthermore, it can be determined that the thickness h of the film pattern m21 satisfies:

[0204] h≤h′=H+T+G′-r Formula (6)

[0205] Where H is the arch height of lens 1031 and T is the thickness of auxiliary layer 1034.

[0206] Therefore, the maximum value G′ of the thickness difference G between the film pattern m21 and the auxiliary layer 1034 can be determined according to the above formula (5). Then, the maximum value h′ of the thickness of the film pattern m21 can be determined according to the above formula (6). Furthermore, during the preparation process, it can be determined whether the actual thickness of the film pattern m21 is less than or equal to the maximum value h′ of the thickness of the film pattern m21. If it is determined that the actual thickness of the film pattern m21 is less than or equal to the maximum value h′ of the thickness of the film pattern m21, it can be ensured that the lens 1031 can completely wrap the film pattern m21. If the actual thickness of the film pattern m21 is greater than the maximum value h′ of the thickness of the film pattern m21, the thickness of the film pattern m21 can be reduced during the preparation process to ensure that the lens 1031 can completely wrap the film pattern m21. In addition, the thickness h of the film pattern m21 and the thickness difference G between the film pattern m21 and the auxiliary layer 1034 can satisfy: h=H+T+Gr.

[0207] Optionally, assuming the arch height of lens 1031 is 40 μm and the diameter of the orthographic projection of lens 1031 onto substrate 101 is 80 μm, the equivalent radius of curvature r of lens 1031 can be calculated as 40 μm according to formula (4). Assuming the width k of the orthographic projection of film pattern m21 onto substrate 101 is 50 μm, the thickness difference G between film pattern m21 and auxiliary layer 1034 can be calculated as less than or equal to 31.22 μm according to formula (5). That is, the maximum value G′ of the thickness difference G between film pattern m21 and auxiliary layer 1034 can be 31.22 μm. If the thickness difference G between film pattern m21 and auxiliary layer 1034 is greater than 31.22 μm, it may cause lens 1031 to be unable to completely wrap film pattern m21.

[0208] Optionally, during the fabrication process, the second sub-layer m2 can be etched using an etching process, followed by the fabrication of an auxiliary layer 1034 using a patterning process, retaining the auxiliary layer 1034 at the location of the etched second sub-layer m2. Finally, a lens 1031 is fabricated using a printing process, so that the lens 1031 covers the film pattern m21.

[0209] In this embodiment, if the refractive index of the auxiliary layer 1034 meets the refractive index requirements for the anti-crosstalk layer, the auxiliary layer 1034 can be reused as an anti-crosstalk layer. That is, the light-emitting component 100 may include the auxiliary layer 1034, and the auxiliary layer 1034 can not only serve as a pre-processing functional layer for fabricating the lens 1031, but also as an anti-crosstalk layer to avoid light crosstalk.

[0210] In the embodiments of this application, reference is made to Figure 17 The first semiconductor layer 1041 includes a first connection portion 10411 and a second connection portion 10412.

[0211] refer to Figure 4 , Figure 10 , Figures 12 to 14 ,as well as Figures 18 to 20 The light-emitting unit 104 further includes: a connecting electrode 1044, an insulating layer 1045, a first electrode 1046, and a second electrode 1047. Figure 18 The light-emitting component provided in this application embodiment is along Figure 17 The cross-sectional view in the AA' direction. Figure 19 The light-emitting component provided in this application embodiment is along Figure 17 A cross-sectional view in the BB' direction. Figure 20 The light-emitting component provided in this application embodiment is along Figure 17 A cross-sectional view along the CC' direction.

[0212] The connecting electrode 1044 is connected to the first connecting portion 10411, and the light-emitting functional layer 104a is connected to the second connecting portion 10412. The insulating layer 1045 includes a first via Y1 and a second via Y2. The first via Y1 exposes at least a portion of the connecting electrode 1044, and the second via Y2 corresponds to the light-emitting unit 104, exposing at least a portion of the light-emitting functional layer 104a of the corresponding light-emitting unit 104.

[0213] The first electrode 1046 of the light-emitting unit 104 is located on the side of the insulating layer 1045 away from the connecting electrode 1044, and the first electrode 1046 is connected to the connecting electrode 1044 through the first via Y1. The second electrode 1047 of the light-emitting unit 104 is located on the side of the insulating layer 1045 away from the light-emitting functional layer 104a, and the second electrode 1047 is electrically connected to the light-emitting functional layer 104a through the second via Y2.

[0214] Optionally, the light-emitting functional layer 104a includes: a light-emitting layer 1042 and a second semiconductor layer 1043. The light-emitting layer 1042, the second semiconductor layer 1043, and the second electrode 1047 are stacked in a direction perpendicular to and away from the substrate 101.

[0215] For ease of description, the light-emitting functional layer 104a of the first light-emitting unit is referred to as the first light-emitting functional layer 104a1, the light-emitting functional layer 104a of the second light-emitting unit is referred to as the second light-emitting functional layer 104a2, and the light-emitting functional layer 104a of the third light-emitting unit is referred to as the third light-emitting functional layer 104a3.

[0216] When the light-emitting component 100 includes multiple light-emitting units 104, the first semiconductor layer 1041 of the multiple light-emitting units 104 can be shared as an interconnected integral structure. The first electrode 1046 of the multiple light-emitting units 104 can be a common electrode. (Reference) Figure 17The shared first semiconductor layer 1041 includes: a first connection portion 10411 connected to the first electrode 1046; a plurality of second connection portions 10412 correspondingly connected to the plurality of light-emitting functional layers 104a of the plurality of light-emitting units 104; and an auxiliary portion 10413 connected to the first connection portion 10411 and the plurality of second connection portions 10412. The auxiliary portion 10413, the first connection portion 10411, and the plurality of second connection portions 10412 are an integral structure.

[0217] For example, the shared first semiconductor layer 1041 includes three second connection portions 10412. The first second connection portion 10412a is connected to the first light-emitting functional layer 104a1. The second second connection portion 10412b is connected to the second light-emitting functional layer 104a2. The third second connection portion 10412c is connected to the third light-emitting functional layer 104a3.

[0218] Optionally, the connecting electrode 1044 can be a common electrode for multiple light-emitting units 104. The connecting electrode 1044 can be located between the first semiconductor layer 1041 and the first electrode 1046, for connecting the first semiconductor layer 1041 and the first electrode 1046. Furthermore, the connecting electrode 1044 can be connected to the first connecting portion 10411 of the first semiconductor layer 1041. For example, the connecting electrode 1044 can be located on the side of the first connecting portion 10411 away from the substrate 101, and the orthographic projection of the connecting electrode 1044 on the substrate 101 can overlap with the orthographic projection of the first connecting portion 10411 on the substrate 101, so that the connecting electrode 1044 and the first connecting portion 10411 are connected. For example, the outer boundary of the orthographic projection of the first connecting portion 10411 on the substrate 101 coincides with the outer boundary of the orthographic projection of the connecting electrode 1044 on the substrate 101.

[0219] In this embodiment, the material of the second semiconductor layer 1043 in each light-emitting unit 104 may include p-type doped gallium nitride (P-GaN). In this embodiment, the first semiconductor layer 1041 may include a first sublayer m1 and a second sublayer m2 stacked along a direction perpendicular to and close to the substrate 101. That is, the second sublayer m2 is closer to the substrate 101 than the first sublayer m1.

[0220] It is understood that when the first semiconductor layer 1041 of multiple light-emitting units 104 is shared, the first semiconductor layer 1041 can be divided into: an auxiliary part 10413, a first connecting part 10411 and a second connecting part 10412 in the direction parallel to the extension surface of the substrate 101, and the first semiconductor layer 1041 can be divided into: a first sub-layer m1 and a second sub-layer m2 in the direction perpendicular to the extension surface of the substrate 101.

[0221] In this design, the first sub-layer m1 in the first semiconductor layer 1041 can be located between the second sub-layer m2 and the light-emitting layer 1042 in the light-emitting unit 104. That is, the first sub-layer m1 is closer to the light-emitting layer 1042 of the light-emitting unit 104 than the second sub-layer m2. Here, the material of the first sub-layer m1 in the first semiconductor layer 1041 can be N-type doped gallium nitride (N-GaN), and the second sub-layer m2 in the first semiconductor layer 1041 can be a gallium nitride buffer layer (buffer GaN).

[0222] Optionally, the light-emitting layer 1042 can be a multi-quantum well (MQW) layer. The light-emitting functional layer 104a of the light-emitting unit 104 may also include a current spreading layer 1048 located on the side of the second semiconductor layer 1043 away from the substrate 101. Optionally, the material of the current spreading layer 1048 is indium tin oxide (ITO). By designing the current spreading layer 1048, hole transport can be facilitated, improving the electrical performance of the light-emitting component. Optionally, the first electrode 1046 can be an N-type electrode, and the second electrode 1047 can be a P-type electrode.

[0223] In the embodiments of this application, the above Figures 17 to 20 These terms are used to indicate that the first, second, and third light-emitting units in a light-emitting component are arranged in a triangular pattern. Of course, reference... Figure 4 , Figure 10 ,as well as Figures 12 to 15 The first, second, and third light-emitting units in the light-emitting component 100 can be arranged in a straight line. This application does not limit this.

[0224] Optional, see reference Figure 1 , Figure 4 , Figure 10 , Figures 12 to 15 as well as Figures 18 to 20 The color conversion unit 102 includes an encapsulation layer 1026 located on the side of the limiting dam layer 1024 and the color conversion part 1022 away from the substrate 101. The encapsulation layer 1026 can encapsulate the light-shielding layer 1023, the limiting dam layer 1024, the color conversion part 1022, and the reflective part 1021 in the color conversion unit 102, so as to prevent water and oxygen in the external environment from penetrating the limiting dam layer 1024 and the light-shielding layer 1023 and eroding the color conversion part 1022 or the reflective part 1021. This ensures that the color conversion part 1022 can stably convert the color of light, resulting in high reliability of the color conversion part 1022.

[0225] The material of the encapsulation layer 1026 can be an inorganic material, such as silicon oxide, silicon nitride, and silicon oxynitride.

[0226] In summary, this application provides a light-emitting component, which includes a substrate, a color conversion unit, a lens unit, and a light-emitting unit. Light of the target color emitted by the light-emitting unit is focused by the lens unit and converted in color by the color conversion unit before exiting through a reflective unit. Simultaneously, at least a portion of the target color light emitted by the light-emitting unit that is focused by the lens unit but not converted in color by the color conversion unit can be reflected back into the color conversion unit by the reflective unit and can be converted again by the color conversion unit, thereby improving the utilization rate of the light emitted by the light-emitting unit and enhancing the light-emitting effect of the light-emitting component.

[0227] Figure 21 This is a flowchart illustrating a method for fabricating a light-emitting component according to an embodiment of this application. (Reference) Figure 21 The method includes:

[0228] Step S101: Obtain the color transfer substrate.

[0229] In the embodiments of this application, reference is made to Figure 22 The color conversion substrate includes a substrate 101 and a color conversion unit 102 located on one side of the substrate 101. The color conversion unit 102 includes a reflective portion 1021, a color conversion portion 1022, a light-shielding layer 1023, and a limiting dam layer 1024. The light-shielding layer 1023 has a light-transmitting aperture K, and the orthographic projection of the reflective portion 1021 onto the substrate 101 overlaps with the orthographic projection of the corresponding light-transmitting aperture K onto the substrate 101. The limiting dam layer 1024 is located on the side of the light-shielding layer 1023 away from the substrate 101, and has an opening region Q corresponding to the light-transmitting aperture K, the orthographic projection of the opening region Q onto the substrate 101 overlapping with the orthographic projection of the corresponding light-transmitting aperture K onto the substrate 101. The color conversion portion 1022 is located within the opening region Q and is used to convert the color of light entering the color conversion portion 1022.

[0230] Taking an example where the light-emitting component 100 includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit, and the color conversion unit 102 further includes a first transparent portion 1025, and the third color conversion portion 1022c is the second transparent portion. (See reference...) Figure 23The process of obtaining the color conversion substrate includes: forming a reflective film on a substrate 101; patterning the reflective film to obtain a reflective portion 1021; forming a light-shielding layer 1023 (black BM layer), wherein the third light-transmitting hole K3 of the light-shielding layer 1023 has no reflective portion 1021; forming a limiting dam layer 1024 on the side of the light-shielding layer 1023 away from the substrate 101; forming a first reflective layer 1025 on the sidewall of the limiting dam layer 1024 near the opening area; filling the third opening area Q3 and the third light-transmitting hole K2 with transparent material to form a first transparent portion 1025 and a second transparent portion; forming a first color conversion portion 1022a in the first opening area Q1 of the limiting dam layer 1024 and a second color conversion portion 1022b in the second opening area Q2 by printing or exposure and development; and using plasma-enhanced chemical vapor deposition (PECVD) or atomic layer deposition. An encapsulation layer 1026 is formed on the side of the defined dam layer 1024 away from the substrate 101 by means of deposition (ALD), etc. Optionally, the material of the encapsulation layer 1026 can be silicon oxide (SiO) or silicon nitride (SiN).

[0231] Step S102: Obtain the initial light-emitting substrate.

[0232] In the embodiments of this application, reference is made to Figure 24 The process of obtaining the initial light-emitting substrate includes:

[0233] Step S1021: A first semiconductor thin film, a light-emitting thin film, a second semiconductor thin film, and a current-diffusing thin film are formed on one side of the first temporary substrate.

[0234] Among them, reference Figure 25 A first semiconductor thin film, a light-emitting thin film, a second semiconductor thin film, and a current-spreading thin film are stacked along a direction away from the first temporary substrate. The first temporary substrate is a sapphire substrate or a silicon-based substrate. The material of the first semiconductor thin film may include N-type doped gallium nitride, the material of the light-emitting thin film may include multiple quantum wells, and the material of the second semiconductor thin film may include P-type doped gallium nitride. The material of the current-spreading thin film may include indium tin oxide (ITO).

[0235] Step S1022: Etch the current spreading film, the second semiconductor film, the light emitting film and the first semiconductor film using a mask process to obtain the first semiconductor layer, the light emitting layer, the second semiconductor layer and the current spreading layer of the light emitting unit.

[0236] refer to Figure 26The first semiconductor layer 1041, the light-emitting layer 1042, the second semiconductor layer 1043, and the current spreading layer 1048 are stacked sequentially along the side away from the first temporary substrate.

[0237] Step S1023: Forming connecting electrodes.

[0238] refer to Figure 27 The connecting electrode 1044 is located on the side of the first semiconductor layer 1041 away from the first temporary substrate and is connected to the first semiconductor layer 1041.

[0239] Step S1024: Form an insulating layer.

[0240] refer to Figure 28 The insulating layer 1045 includes a first via Y1 and a second via Y2. The first via Y1 exposes at least a portion of the first semiconductor layer 1041, and the second via Y2 exposes at least a portion of the current spreading layer 1048.

[0241] Step S1025: Form the first electrode and the second electrode.

[0242] refer to Figure 29 The first electrode 1046 is connected to the first semiconductor layer 1041 through the first via Y1, and the second electrode 1047 is connected to the second semiconductor layer 1043 through the second via Y2 (the second electrode 1047 is connected to the current spreading layer 1048 and the second semiconductor layer 1043).

[0243] Step S103: Obtain the light-emitting substrate.

[0244] In this embodiment of the application, the process of obtaining the light-emitting substrate includes: referencing Figure 30 A second temporary substrate is formed on the side of the light-emitting unit 104 away from the first temporary substrate. The second temporary substrate may be connected to the light-emitting unit 104 using a temporary adhesive material. (Reference) Figure 31 The first temporary substrate is peeled off from the light-emitting unit 104. Optionally, the first temporary substrate can be removed using a laser lift-off (LLO) process.

[0245] Step S104: Form an anti-crosstalk layer on the side of the first semiconductor layer away from the second temporary substrate.

[0246] refer to Figure 32 The anti-crosstalk layer 105 is located on the side of the first semiconductor layer 1041 away from the second temporary substrate. The anti-crosstalk layer 105 can be an inorganic film layer prepared by chemical vapor deposition (CVD). For example, the material of the anti-crosstalk layer 105 can be silicon oxide (SiO).

[0247] Step S105, Reference Figure 33 An auxiliary layer is formed on the side of the anti-crosstalk layer away from the first semiconductor layer.

[0248] Alternatively, spin coating and post-baking can be used without patterning.

[0249] Step S106, Reference Figure 34 A lens is formed on the side of the auxiliary layer away from the anti-crosstalk layer.

[0250] Optionally, a lens 1031 can be formed on the side of the auxiliary layer 1034 away from the anti-crosstalk layer 105 using a printing process.

[0251] Step S107, Reference Figure 35 A lens planarization layer is formed on the side of the lens away from the auxiliary layer.

[0252] Optionally, a lens planarization layer 1032 can be formed on the side of lens 1031 away from auxiliary layer 1034 using a printing process. The refractive index of lens planarization layer 1032 can be less than the refractive index of lens 1031.

[0253] Step S108, Reference Figure 36 A bonding adhesive layer is used to connect the light-emitting unit in the light-emitting substrate and the color conversion unit in the color conversion substrate.

[0254] refer to Figure 36 The bonding adhesive layer 106 is located between the lens unit 103 and the color conversion unit 102, and is used to connect the light-emitting unit 104 and the color conversion unit 102.

[0255] Step S109: Remove the second temporary substrate.

[0256] refer to Figure 37 After removing the second temporary substrate using a laser lift-off process, the light-emitting component is obtained. The substrate 101 can then be thinned. Using a thicker substrate 101 during the fabrication of the light-emitting component is beneficial for its processing, and the final thinning facilitates subsequent processes.

[0257] In this embodiment, the color conversion substrate may include multiple color conversion units 102 with light-emitting components. The light-emitting substrate may also include multiple light-emitting units 104 with light-emitting components. For example, both the color conversion substrate and the light-emitting substrate can be 4-inch circular substrates. To obtain independent light-emitting components, laser cutting technology can be used for cutting.

[0258] In summary, this application provides a method for fabricating a light-emitting component. The fabricated light-emitting component includes a substrate, a color conversion unit, a lens unit, and a light-emitting unit. Light of the target color emitted by the light-emitting unit is focused by the lens unit and converted by the color conversion unit before exiting through a reflective unit. Simultaneously, at least a portion of the target color light emitted by the light-emitting unit that is focused by the lens unit but not converted by the color conversion unit can be reflected back into the color conversion unit by the reflective unit and undergo secondary conversion, thereby improving the utilization rate of the light emitted by the light-emitting unit.

[0259] Figure 38 This is a schematic diagram of the structure of a display substrate provided in an embodiment of this application. (Reference) Figure 38 The display substrate includes a driving backplate 200 and a plurality of light-emitting components 100 as provided in the above embodiments. The plurality of light-emitting components 100 can be connected to the driving backplate 200 by die bonding.

[0260] refer to Figure 39 Multiple light-emitting components 100 are located in display area a of the display substrate, and the multiple light-emitting components 100 are arranged in an array. The driving backplate 200 is used to carry the light-emitting components 100 and provide driving signals to the light-emitting components 100.

[0261] Optional, see reference Figure 39 Multiple light-emitting components 100 in the display substrate are independently arranged, meaning that the light-emitting components 100 are independent of each other, thus enabling the maintenance and replacement of individual light-emitting components 100. Optionally, the light-emitting components 100 can be independent chip structures (i.e., the light-emitting components can be light-emitting chips), and different light-emitting components 100 are distributed at intervals. For example, the different light-emitting components 100 are isolated by air.

[0262] Optionally, the display substrate can be a display screen in a mobile phone, laptop, or flat-panel computer, or it can be an outdoor advertising screen.

[0263] Since the display substrate can have essentially the same technical effects as the light-emitting components described in the previous embodiments, for the sake of brevity, the technical effects of the display substrate will not be described again here.

[0264] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A light-emitting component, characterized in that, The light-emitting component includes: a substrate, a color conversion unit, a lens unit, and a light-emitting unit; The color conversion unit is located on one side of the substrate. The color conversion unit includes a reflective part and a color conversion part arranged in a direction away from the substrate. The color conversion part is used to convert the light emitted by the light-emitting unit into light of other colors. The lens unit includes a lens and a lens planarization layer located on the side of the lens closer to the substrate. The orthographic projection of the lens on the substrate overlaps with the orthographic projection of the color conversion part on the substrate. The lens unit is used to converge the light emitted by the light-emitting unit. The orthographic projection of the light-emitting unit on the substrate overlaps with the orthographic projection of the color conversion unit on the substrate. The light of the target color emitted by the light-emitting unit is converged by the lens unit and converted by the color conversion unit before being emitted from the reflective part.

2. The light-emitting component according to claim 1, characterized in that, The orthographic projection of the lens onto the substrate is circular, with the diameter of the circle being greater than or equal to the width of the orthographic projection of the color conversion part onto the substrate, and less than or equal to the diagonal length of the orthographic projection of the color conversion part onto the substrate.

3. The light-emitting component according to claim 2, characterized in that, The light-emitting component includes multiple light-emitting units, and the lens unit includes multiple lenses corresponding to the multiple light-emitting units; The orthographic projection of each lens on the substrate and the orthographic projection of the corresponding light-emitting unit on the substrate overlap, and the diameter of the circle also satisfies the condition that the interval between two adjacent lenses is less than or equal to the minimum design size of the interval.

4. The light-emitting component according to claim 3, characterized in that, The minimum design size of the interval is greater than or equal to 5 micrometers.

5. The light-emitting component according to claim 1, characterized in that, The light-emitting component includes multiple light-emitting units, and the lens unit includes multiple lenses corresponding to the multiple light-emitting units; the light-emitting component also includes an anti-crosstalk layer located between the lens unit and the light-emitting units; The refractive index of the anti-crosstalk layer is less than the refractive index of the film layer near the anti-crosstalk layer in the light-emitting unit.

6. The light-emitting component according to claim 1, characterized in that, The light-emitting component includes multiple light-emitting units, and the lens unit includes multiple lenses corresponding to the multiple light-emitting units; the light-emitting component also includes an anti-crosstalk layer located between the lens unit and the light-emitting units; The anti-crosstalk layer is made of silicon oxide, and the included angle δ′ is greater than 33°. The anti-crosstalk layer is made of silicon nitride, and the included angle δ′ is greater than 48°. The anti-crosstalk layer is made of silicon oxynitride, and the included angle δ′ is greater than 33°. The anti-crosstalk layer is made of acrylic resin, and the included angle δ′ is greater than 34°. The anti-crosstalk layer is made of carbonate, and the included angle δ′ is greater than 36°. The anti-crosstalk layer is made of polyurethane resin, and the included angle δ′ is greater than 32°. Wherein, δ′ is the angle between the target line and the target normal, the target line is the boundary of the light-emitting surface of one of the light-emitting units that is close to the boundary of another adjacent light-emitting unit, and the line connecting the boundary of the orthographic projection of the lens corresponding to the other adjacent light-emitting unit onto the anti-crosstalk layer that is close to the boundary of one of the light-emitting units, and the target normal is perpendicular to the surface of the anti-crosstalk layer.

7. The light-emitting component according to claim 5, characterized in that, The refractive index n2 of the anti-crosstalk layer satisfies: n2≤n1*sinδ′; Wherein, n1 is the refractive index of the film layer near the anti-crosstalk layer in the light-emitting unit, δ′ is the angle between the target line and the target normal, and δ′ is the critical angle at which light undergoes total internal reflection at the interface between the second sub-layer and the anti-crosstalk layer. The target line is the line connecting the boundary of the light-emitting surface of one light-emitting unit near the boundary of another adjacent light-emitting unit, and the line connecting the boundary of the orthographic projection of the lens corresponding to the other adjacent light-emitting unit onto the anti-crosstalk layer near the boundary of one light-emitting unit. The target normal is perpendicular to the surface of the anti-crosstalk layer.

8. The light-emitting component according to claim 7, characterized in that, θ satisfies: Wherein, θ is the angle between the incident ray from the second sublayer to the anti-crosstalk layer and the surface of the second sublayer away from the substrate, θ′ is the acute angle between the target line and the surface of the second sublayer away from the substrate, θ=90°-δ, δ is the angle between the incident ray from the second sublayer to the anti-crosstalk layer and the target normal, θ′=90°-δ′, b is the distance between the light-emitting surface of the light-emitting unit and the side of the anti-crosstalk layer near the light-emitting unit, D is the distance between adjacent lenses, and E is the distance between the boundary of the light-emitting surface of the light-emitting unit and the boundary of the lens corresponding to the light-emitting unit.

9. The light-emitting component according to claim 8, characterized in that, b satisfies: b = f - fF / C; where f is the focal length of the lens, F is the width of the orthogonal projection of the light-emitting surface of the light-emitting unit onto the substrate, and C is the width of the orthogonal projection of the lens onto the substrate; f satisfies: f = r / Δn; where r is the equivalent radius of curvature of the lens, and Δn is the difference between the refractive index of the lens and the refractive index of the lens planarization layer; r satisfies: r = (H) 2 +(C / 2) 2 ) / 2H; where H is the camber of the lens; The equivalent radius of curvature of the lens refers to the radius of curvature of the curved surface at the position of the principal optical axis of the lens.

10. The light-emitting component according to any one of claims 1 to 9, characterized in that, The color conversion unit further includes: a light-shielding layer and a limiting dam layer arranged sequentially along a direction away from the substrate; The light-shielding layer includes a light-transmitting hole, and the reflective portion is located at least within the light-transmitting hole; The defined dam layer includes an opening area, the color conversion part is located at least within the opening area, and the orthographic projection of the opening area on the substrate and the orthographic projection of the light-transmitting hole on the substrate overlap; Wherein, the first included angle between the sidewall of the limiting dam layer near the opening region and the side of the limiting dam layer away from the substrate is an acute angle.

11. The light-emitting component according to claim 10, characterized in that, The first included angle is in the range of 35 degrees to 70 degrees.

12. The light-emitting component according to claim 10, characterized in that, The color conversion unit further includes: a first reflective layer located on the sidewall of the defined dam layer near the opening area; the material of the first reflective layer includes metal.

13. The light-emitting component according to any one of claims 1 to 9 and 11 to 12, characterized in that, The target color is blue, and the reflective part includes a first dielectric layer and a second dielectric layer. The first dielectric layer and the second dielectric layer are alternately stacked once or multiple times to transmit red light and green light, and to reflect blue light with an angle less than or equal to the target angle between the reflective part and the first normal.

14. The light-emitting component according to any one of claims 1 to 9 and 11 to 12, characterized in that, The lens unit further includes: a light adjustment structure located at the interval between adjacent lenses; The height of the light-adjusting structure is greater than or equal to the arch height of the lens, and the light-adjusting structure is used to block or reflect light after passing through the lens.

15. The light-emitting component according to claim 14, characterized in that, The material of the light-adjusting structure includes a light-shielding material; or... The light-adjusting structure includes a main body and a second reflective layer located on the side wall of the main body. The material of the main body includes a light-shielding material or a light-transmitting material, and the material of the second reflective layer includes metal.

16. The light-emitting component according to any one of claims 1 to 9 and 11 to 12, characterized in that, The light-emitting unit includes a first semiconductor layer and a light-emitting functional layer located on the side of the first semiconductor layer away from the substrate; the first semiconductor layer includes a first sub-layer and a second sub-layer stacked in a direction away from the substrate, the second sub-layer being a continuous film layer; the light-emitting functional layer includes a light-emitting layer and a second semiconductor layer stacked in a direction away from the substrate. The lens unit further includes an auxiliary layer located on the side of the lens away from the substrate; the auxiliary layer is a continuous film layer; The lens is spaced apart from the second sublayer in a direction perpendicular to the substrate.

17. The light-emitting component according to claim 16, characterized in that, The surface of the auxiliary layer near the substrate is planar, and the lens covers a portion of the planar surface of the auxiliary layer near the substrate.

18. The light-emitting component according to any one of claims 1 to 9 and 11 to 12, characterized in that, The light-emitting unit includes a first semiconductor layer and a light-emitting functional layer located on the side of the first semiconductor layer away from the substrate; the first semiconductor layer includes a first sub-layer and a second sub-layer stacked in a direction away from the substrate, the second sub-layer includes a film pattern, the orthographic projection of the film pattern on the substrate is located within the orthographic projection of the lens on the substrate, and the light-emitting functional layer includes a light-emitting layer and a second semiconductor layer stacked in a direction away from the substrate. The lens unit further includes an auxiliary layer located on the side of the lens away from the substrate; the auxiliary layer includes a cutout area, the orthographic projection of the film pattern on the substrate and the orthographic projection of the cutout area on the substrate overlap, the thickness of the auxiliary layer is less than the thickness of the film pattern, and the edge of the lens on the side away from the substrate contacts the surface of the auxiliary layer close to the substrate. The lens's orthogonal projection onto the substrate covers the orthogonal projection of the film pattern onto the substrate, and encloses the surface of the film pattern near the substrate, as well as a portion of the side surface of the film pattern.

19. The light-emitting component according to claim 18, characterized in that, The difference G between the film pattern and the thickness of the auxiliary layer satisfies: Wherein, G′ is the maximum value of the difference between the thickness of the film pattern and the auxiliary layer, r is the equivalent radius of curvature of the lens, k is the width of the orthographic projection of the film pattern on the substrate, and the equivalent radius of curvature of the lens refers to the radius of curvature of the lens on the target cross section, which is perpendicular to the side of the lens away from the substrate and passes through the center of the lens; The equivalent radius of curvature of the lens refers to the radius of curvature of the curved surface position passing through the principal optical axis of the lens.

20. The light-emitting component according to claim 19, characterized in that, The thickness h of the film pattern satisfies: h≤h′=H+T+G′-r; Where h′ is the maximum thickness of the film pattern, H is the arch height of the lens, and T is the thickness of the auxiliary layer.

21. The light-emitting component according to any one of claims 1 to 9, and 11 to 12, characterized in that, The light-emitting component further includes: a bonding adhesive layer located between the color conversion unit and the lens unit, the bonding adhesive layer being used to connect the color conversion unit and the light-emitting unit; or... The lens planarization layer in the lens unit is reused as a bonding adhesive layer, and the lens planarization layer is used to connect the color conversion unit and the light emission unit.

22. A display substrate, characterized in that, A driving backplate and a plurality of light-emitting components as described in any one of claims 1 to 21 located on one side of the driving backplate and arranged in an array; The driving backplate is used to provide driving signals to the light-emitting component to drive the light-emitting unit in the light-emitting component to emit light.

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