Light emitting device, encapsulation method of light emitting device, and display panel
Patent Information
- Application Number
- CN202611257983.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-08-19
- Publication Date
- 2026-10-27
AI Technical Summary
然而，随着应用场景向户外高清显示、车载照明等高端领域拓展，现有封装结构面临严峻的可靠性挑战
[0016]本发明提供了一种发光器件、发光器件的封装方法及显示面板，通过在引线键合后、封装胶体涂覆前依次执行纳米防护膜沉积与等离子体表面活化刻蚀处理，实现了防护与粘接性能的协同提升。具体而言，纳米防护膜的气相沉积实现了对发光芯片、引线及封装支架复杂三维结构的全域致密包覆，有效阻隔了外部腐蚀介质的侵入路径；等离子体表面活化刻蚀处理则在膜层表面同步完成了物理微粗化与化学极性改性，形成的纳米级微观粗糙结构增加了有效接触面积并提供机械锚定力，引入的极性基团则大幅提升了表面能并与封装胶体形成氢键或化学键。这种“物理嵌合+化学键合”的双重增强机制，彻底克服了传统封装中防护层与胶体界面结合力弱的缺陷，显著抑制了器件在温度循环、超声冲击等严苛条件下的分层失效，大幅提升了发光器件在户外、车载等高端应用场景下的长期可靠性。
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Figure CN122995373A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of light-emitting device packaging technology, and in particular to a light-emitting device, a packaging method for the light-emitting device, and a display panel. Background Technology
[0002] In the field of light-emitting device packaging, especially in TOP-type RGB LED packaging, basic protection is typically achieved using a packaging bracket and epoxy encapsulant. However, as applications expand to high-end fields such as outdoor high-definition displays and automotive lighting, existing packaging structures face severe reliability challenges. On the one hand, after the metal leads and packaging bracket are injection molded, tiny gaps are easily generated under stress such as bending, and the smooth surface of the metal results in weak interfacial adhesion between it and the encapsulant. On the other hand, the chip and leads are exposed to complex environments for extended periods, where corrosive media such as moisture and sulfides can easily penetrate along the interfacial gaps, causing metal migration, corrosion, leakage, and even lamp failure. Existing technologies mostly focus on optimizing the adhesive formulation or bracket shape, failing to fundamentally resolve the contradiction between weak interfacial adhesion between heterogeneous materials and insufficient protection of complex three-dimensional structures. This leads to interface delamination of devices under temperature cycling or ultrasonic shock, severely impacting product yield and lifespan. Summary of the Invention
[0003] The purpose of this invention is to overcome the shortcomings of the prior art. This invention provides a light-emitting device, a packaging method for the light-emitting device, and a display panel. It achieves full-area dense coating through a nano-protective film, and combines plasma activation to construct a dual enhancement mechanism of physical anchoring and chemical bonding, which significantly improves the interface bonding strength, effectively inhibits delamination failure and corrosive media intrusion, and improves device reliability.
[0004] This invention provides a light-emitting device, characterized in that the light-emitting device comprises: A packaging bracket, the packaging bracket including a top metal layer and bottom pins, wherein a cup is disposed on the top metal layer; A light-emitting chip is disposed on the top metal layer of the packaging bracket, and the light-emitting chip is located in a bowl on the top metal layer; Lead wires, the lead wires connecting the light-emitting chip to the top metal layer of the packaging bracket; A nano-protective film, wherein the nano-protective film covers the coating area on the surface of the light-emitting device; An encapsulating colloid covers the light-emitting chip and leads, and the encapsulating colloid also covers the nano-protective film; The surface of the nano-protective film has a micro-rough structure, and polar groups are distributed on the surface of the nano-protective film.
[0005] Furthermore, the nano-protective film continuously covers the surfaces of the encapsulation bracket, the light-emitting chip, and the leads.
[0006] Furthermore, the coverage area of the nano-protective film includes: The first coating area is located at the bend of the edge of the top metal layer; The second coating area is located on the outer wall of the cup of the top metal layer; The third coating area is located on the inner wall of the cup of the top metal layer; The fourth coating area is located at the bottom of the cup of the top metal layer; The fifth coating area is located on the exposed surface of the light-emitting chip, including the top surface and the side surface of the light-emitting chip; The sixth coating region is located on the surface of the lead.
[0007] Furthermore, the thickness of the nano-protective film is 200nm-300nm.
[0008] Furthermore, the material of the nano-protective film includes modified organosilicon or modified siloxane; The polar groups distributed on the surface of the nano-protective film include at least one of hydroxyl, carbonyl, carboxyl, siloxane, or epoxy groups.
[0009] Furthermore, the surface water droplet angle of the nano-protective film is 40°-60°.
[0010] Furthermore, the micro-rough structure includes a nano-pit array, wherein the depth of the nano-pits in the nano-pit array is 20nm-30nm and the diameter is 50nm-200nm.
[0011] The present invention also provides a packaging method for a light-emitting device, the packaging method being used to package the above-mentioned light-emitting device, the packaging method comprising: The non-coated areas on the surface of the light-emitting device are masked. A nano-protective film is deposited in the coating area on the surface of the light-emitting device; The nano-protective film is subjected to plasma surface activation etching treatment to form a micro-rough structure on the surface of the nano-protective film and introduce polar groups. An encapsulating colloid is filled into the cup-shaped metal layer on the top surface of the light-emitting device. The encapsulating colloid covers the light-emitting chip and leads to form the finished light-emitting device.
[0012] Furthermore, the deposition of a nano-protective film on the surface of the light-emitting device includes: A nano-protective film is deposited on the surface of the light-emitting device using a low-temperature vapor deposition process.
[0013] Furthermore, the plasma surface activation etching process is performed using oxygen-containing plasma, and the working gas of the oxygen-containing plasma includes oxygen.
[0014] Furthermore, the packaging method also includes: After plasma surface activation etching of the nano-protective film, the non-coated areas on the light-emitting device are demasked.
[0015] The present invention also provides a display panel, the display panel including the light-emitting device described above, and the display panel adopts an encapsulation form of on-board potting.
[0016] This invention provides a light-emitting device, a packaging method for the light-emitting device, and a display panel. By sequentially performing nano-protective film deposition and plasma surface activation etching after wire bonding and before encapsulation colloid coating, a synergistic improvement in protection and adhesion performance is achieved. Specifically, the vapor deposition of the nano-protective film achieves full-area dense coverage of the complex three-dimensional structure of the light-emitting chip, leads, and packaging bracket, effectively blocking the intrusion path of external corrosive media. The plasma surface activation etching process simultaneously completes physical micro-roughening and chemical polarity modification on the film surface. The resulting nanoscale micro-rough structure increases the effective contact area and provides mechanical anchoring force, while the introduced polar groups significantly increase the surface energy and form hydrogen bonds or chemical bonds with the encapsulation colloid. This dual enhancement mechanism of "physical intercalation + chemical bonding" completely overcomes the defect of weak interfacial bonding between the protective layer and the colloid in traditional packaging, significantly suppresses delamination failure of the device under harsh conditions such as temperature cycling and ultrasonic shock, and greatly improves the long-term reliability of the light-emitting device in high-end application scenarios such as outdoor and automotive applications. Attached Figure Description
[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0018] Figure 1 This is a schematic cross-sectional view of the light-emitting device structure in Embodiment 1 of the present invention; Figure 2 yes Figure 1 Enlarged view of point a in the middle; Figure 3 This is a flowchart of the packaging method for the light-emitting device in Embodiment 2 of the present invention; Figure 4 This is a schematic cross-sectional view of the finished light-emitting device structure in Embodiment 2 of the present invention; Figure 5 This is a schematic diagram of the light-emitting device structure in Embodiment 2 of the present invention after being shielded. Detailed Implementation
[0019] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0020] In this invention, it should be understood that terms such as “comprising” or “having” are intended to indicate the presence of features, figures, steps, behaviors, components, portions or combinations thereof disclosed in this specification, and are not intended to exclude the possibility that one or more other features, figures, steps, behaviors, components, portions or combinations thereof are present or added.
[0021] It should also be noted that, unless otherwise specified, the embodiments and features described in the present invention can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.
[0022] Example 1 Embodiment 1 of the present invention provides a light-emitting device, the light-emitting device comprising: A packaging bracket, the packaging bracket including a top metal layer and bottom pins, wherein a cup is disposed on the top metal layer; A light-emitting chip is disposed on the top metal layer of the packaging bracket, and the light-emitting chip is located in a bowl on the top metal layer; Lead wires, the lead wires connecting the light-emitting chip to the top metal layer of the packaging bracket; A nano-protective film, wherein the nano-protective film covers the coating area on the surface of the light-emitting device; An encapsulating colloid covers the light-emitting chip and leads, and the encapsulating colloid also covers the nano-protective film; The surface of the nano-protective film has a micro-rough structure, and polar groups are distributed on the surface of the nano-protective film.
[0023] Specifically, such as Figure 1 As shown, Figure 1 A cross-sectional schematic diagram of the light-emitting device structure in Embodiment 1 of the present invention is shown. The light-emitting device includes a packaging bracket 1, a light-emitting chip 2, a lead wire 3, a nano-protective film 4, and a packaging colloid 5.
[0024] In an optional implementation of this embodiment, the packaging bracket 1 includes a top metal layer 11 and a bottom pin 12. The top metal layer 11 is connected to the bottom pin 12 by bending, and a bowl 13 is disposed on the top metal layer 11.
[0025] Specifically, the packaging bracket 1 includes a top metal layer 11 located at the top of the bracket and bottom pins 12 located at the bottom of the bracket. In this embodiment, two bottom pins 12 are provided, and a bowl 13 is provided on the top metal layer 11.
[0026] In an optional implementation of this embodiment, the light-emitting chip 2 is disposed on the top metal layer 11 of the packaging bracket 1, and the light-emitting chip 2 is located in the bowl 13 on the top metal layer 11.
[0027] Specifically, the light-emitting chip 2 is die-bonded to the bottom of the cup 13 on the top metal layer 11 of the packaging bracket 1.
[0028] In an optional implementation of this embodiment, the lead 3 connects the light-emitting chip 2 to the top metal layer 11 of the packaging bracket 1.
[0029] Specifically, the light-emitting chip 2 includes two electrodes, and the lead wire 3 is respectively connected to the two electrodes of the light-emitting chip 2 and the corresponding pads on the top metal layer 11, and then connected to the two bottom pins 12 of the packaging bracket 1 to achieve electrical conduction.
[0030] It should be noted that in this embodiment, the number of light-emitting chips 2 is one. When the number of light-emitting chips 2 is set to one of each of the RGB three-color chips, the number of bottom pins 12 of the packaging bracket 1 is six. The lead wire 3 is connected to the electrodes of the RGB three-color chips and the corresponding pads on the top metal layer 11, and then connected to the six bottom pins 12.
[0031] In an optional implementation of this embodiment, the nano-protective film 4 covers the coating area on the surface of the light-emitting device.
[0032] Specifically, the nano-protective film 4 continuously covers the surfaces of the encapsulation bracket 1, the light-emitting chip 2, and the lead wire 3.
[0033] Furthermore, the nano-protective film 4 covers the coating area on the surface of the light-emitting device, and the coating area is the partially exposed area on the surface of the light-emitting device, such as... Figure 1 As shown, Figure 1The thickened area in the middle line indicates the coverage area of the nano-protective film 4. The nano-protective film 4 continuously covers the surfaces of the encapsulation bracket 1, the light-emitting chip 2, and the lead wire 3. The specific coverage area of the coating region includes the first coating region 41, the second coating region 42, the third coating region 43, the fourth coating region 44, the fifth coating region 45, and the sixth coating region 46, wherein: The first coating area 41 is located at the bend of the edge of the top metal layer 11; The second coating area 42 is located on the outer wall of the cup 13 of the top metal layer 11; The third coating area 43 is located on the inner wall of the bowl 13 of the top metal layer 11; The fourth coating area 44 is located at the bottom of the cup 13 of the top metal layer 11; The fifth coating area 45 is located at the exposed surface of the light-emitting chip 2, including the top surface and the side surface of the light-emitting chip 2; The sixth coating region 46 is located on the surface of the lead 3.
[0034] Furthermore, the coverage area of the first coating region 41 extends from the bend at the edge of the top metal layer 11 to 1 cm below the bend. The fourth coating area 44 is located on the bottom of the cup 13 of the top metal layer 11, outside the coverage area of the light-emitting chip 2, including the metal surface on the top metal layer 11 and the river channel portion.
[0035] It should be noted that this continuous coating structure means that the nano-protective film 4 does not only cover the top surface of the device, but forms a conformal coating that conforms to the three-dimensional topology of the encapsulation bracket 1, the light-emitting chip 2 and the lead wire 3. Especially in areas where gaps are prone to occur, such as the bend at the edge of the metal layer on the top surface of the first coating area 41, the nano-protective film 4 completely fills and covers the micro gaps between the metal and the molding compound, forming a dense physical barrier without any breaks, thereby effectively blocking the path of external moisture and corrosive media to penetrate into the interior along the interface.
[0036] In an optional implementation of this embodiment, the encapsulating colloid 5 covers the light-emitting chip 2 and the lead wire 3, and the encapsulating colloid 5 covers the nano-protective film 4.
[0037] Specifically, the encapsulating colloid 5 covers the inside of the bowl 13, encapsulates the light-emitting chip 2 and the lead wire 3, and covers the nano-protective film 4.
[0038] Furthermore, the surface of the nano-protective film 4 has a micro-rough structure, and polar groups are distributed on the surface of the nano-protective film 4.
[0039] The micro-rough structure includes a nano-pit array 47, wherein the depth of the nano-pits in the nano-pit array 47 is 20nm-30nm and the diameter is 50nm-200nm.
[0040] Specifically, the encapsulating colloid 5 serves as the outermost protective layer of the device and the carrier of the optical lens, with its bottom tightly bonded to the upper surface of the nano-protective film 4. Unlike the weak bonding state where the colloid is in direct contact with smooth metal or a support in traditional encapsulation, in this embodiment, as... Figure 2 As shown, Figure 2 It shows Figure 1 The enlarged schematic diagram at point a shows that a micro-rough structure 47 is formed on the surface of the nano-protective film 4. The micro-rough structure 47 is located on the contact surface between the nano-protective film 4 and the encapsulating colloid 5. The micro-rough structure 47 is a uniformly distributed array of nano-pits on the surface of the nano-protective film 4. Each nano-pit has a depth of 20nm-30nm and a diameter of 50nm-200nm. These nano-pits are not random defects, but controlled physical anchoring points. Their size matches the scale of the polymer chain segments in the encapsulating colloid 5, so that the liquid colloid can fully fill the interior of the pits through capillary action before curing. After curing, a strong mechanical interlocking structure is formed, which greatly increases the effective contact area and shear resistance of the interface. In an optional implementation of this embodiment, the material of the nano-protective film includes modified organosilicon or modified siloxane.
[0041] Specifically, modified siloxane is chosen as the substrate because its main chain Si-O bond has excellent flexibility and temperature resistance, which can adapt to stress changes in the light-emitting device during thermal cycling. Furthermore, the polar groups distributed on the surface of the nano-protective film include at least one of hydroxyl, carbonyl, carboxyl, siloxane, or epoxy groups.
[0042] Specifically, the surface of the nano-protective film 4, including the contact surface between the nano-protective film 4 and the encapsulating colloid 5, is rich in polar groups such as hydroxyl, carbonyl, carboxyl, siloxane, or epoxy groups. These polar groups, as chemically active sites, can form hydrogen bonds or chemical bonds with the epoxy resin molecules in the encapsulating colloid 5, thereby further superimposing chemical bonding on the basis of physical anchoring. Through this dual enhancement mechanism of "physical intercalation + chemical bonding", the light-emitting device provided in this embodiment completely overcomes the defect of weak interfacial bonding of heterogeneous materials, significantly suppresses the risk of delamination failure under harsh conditions such as temperature cycling and ultrasonic shock, and ensures the long-term stability of the device in high-end application scenarios such as outdoor displays and automotive lighting.
[0043] Furthermore, by grafting or copolymerizing polar groups such as hydroxyl, siloxane, or epoxy groups into the molecular chain, the film layer is endowed with bulk chemical activity. These polar groups can form hydrogen bonds or chemical adsorption with the oxide layer and polar sites on the surface of the encapsulation support 1, enhancing the adhesion between the film layer and the substrate; on the other hand, they also provide abundant reaction precursors for subsequent plasma activation treatment, making it easier for the activated surface to form a strong interfacial bond with the encapsulation colloid.
[0044] In an optional implementation of this embodiment, the thickness of the nano-protective film 4 is 200nm-300nm.
[0045] Specifically, in this embodiment, the nano-protective film 4 is set to the thickness range mentioned above, which has sufficient density to block water vapor and sulfides, and maintains a low internal stress state so as not to cause the lead wire 3 to shift or the film layer to crack.
[0046] In an optional implementation of this embodiment, the surface water droplet angle of the nano-protective film 4 is 40°-60°.
[0047] Specifically, after the nano-protective film 4 is deposited and subjected to plasma surface activation etching, the surface water droplet angle of the nano-protective film 4 drops to 40°-60°. This directly proves the significant increase in surface energy, indicating that the film surface is rich in polar functional groups such as hydroxyl and carbonyl groups, which can form hydrogen bonds or chemical bonds with the encapsulating colloid.
[0048] In summary, Embodiment 1 of the present invention provides a light-emitting device that constructs a high-strength composite interface between the encapsulating colloid and the nano-protective film through the micro-rough structure and polar functional groups on the surface of the nano-protective film. This fundamentally solves the problem of weak bonding at the interface of heterogeneous materials, enabling the device to have excellent sulfur resistance, moisture resistance, corrosion resistance, and anti-delamination reliability.
[0049] Example 2 Embodiment 2 of the present invention provides a packaging method for a light-emitting device, wherein the packaging method is used to package the light-emitting device in Embodiment 1, characterized in that the packaging method includes: The non-coated areas on the surface of the light-emitting device are masked. A nano-protective film is deposited in the coating area on the surface of the light-emitting device; The nano-protective film is subjected to plasma surface activation etching treatment to form a micro-rough structure on the surface of the nano-protective film and introduce polar groups. An encapsulating colloid is filled into the cup-shaped metal layer on the top surface of the light-emitting device. The encapsulating colloid covers the light-emitting chip and leads to form the finished light-emitting device.
[0050] Specifically, such as Figure 3 and Figure 4 As shown, Figure 3 A flowchart of the packaging method for the light-emitting device in Embodiment 2 of the present invention is shown. Figure 4 A schematic cross-sectional view of the finished light-emitting device structure in Embodiment 2 of the present invention is shown.
[0051] In one optional implementation of this embodiment, such as Figure 3 As shown, the encapsulation method includes the following steps: S301. Masking treatment is applied to the non-coated areas on the surface of the light-emitting device. In one optional implementation of this embodiment, such as Figure 5 As shown, Figure 5 A schematic diagram of the light-emitting device structure after shielding treatment in Embodiment 2 of the present invention is shown. The non-coated areas on the light-emitting device are shielded, specifically by setting shielding layers 6 in these areas.
[0052] It should be noted that although the nano-protective film 4 provides excellent protection and interface bonding performance, in practical engineering applications, light-emitting devices still need to retain specific exposed areas to meet the requirements of external electrical interconnection or mechanical assembly. As shown in Figure 1, the uncoated areas typically include the bottom plane of the package holder 1, the lower part of the outer wall, and the top horizontal surface of the cup in the top layer. These areas are critical interfaces for electrical connection and soldering between the device and the external circuit board. If they are covered by the insulating nano-protective film 4, it will lead to soldering failure or excessive contact resistance. Therefore, before performing the deposition process in step S301, the above-mentioned uncoated areas must be pre-masked to form a masking layer 6.
[0053] Furthermore, the specific implementation of the shielding layer 6 can be by attaching high-temperature resistant tape, coating with a peelable anti-plating solution, or installing a special shielding fixture, etc. Its core function is to physically block precursor molecules from reaching the designated surface during the vapor deposition process, thereby ensuring that the non-coated area remains clean and exposed.
[0054] S302. Deposit a nano-protective film on the coating area of the surface of the light-emitting device; In an optional implementation of this embodiment, a nano-protective film is deposited on the coating area of the light-emitting device based on a deposition process.
[0055] Specifically, such as Figure 4 As shown, the area not covered by the shielding layer 6 is the coating area on the surface of the light-emitting device. The nano-protective film 4 is deposited on the coating area on the surface of the light-emitting device, specifically continuously covering the surfaces of the packaging bracket 1, the light-emitting chip 2, and the lead wire 3. The nano-protective film 4 is formed as a dense thin film covering the surface of the semi-finished light-emitting device after the lead wire 3 has been bonded. Here, "deposition" refers to the process of forming a continuous film layer on the substrate surface through gas phase or liquid phase. Its core function is to provide a basic physical isolation and chemical protection barrier for the light-emitting chip 2, the lead wire 3, and the packaging bracket 1. Through this step, the originally exposed metal surface of the packaging bracket 1, the chip electrodes of the light-emitting chip 2, and the micro-gap at the pin bends are all covered by the nano-protective film 4, thereby effectively blocking the intrusion path of external moisture and the migration path of metal.
[0056] In an optional implementation of this embodiment, a nano-protective film 4 is deposited on the surface of the light-emitting device based on a low-temperature vapor deposition process.
[0057] Specifically, considering that the light-emitting chip 2 has completed die bonding and the lead wire 3 has completed bonding, the device is extremely sensitive to thermal stress. Therefore, a low-temperature vapor deposition process is adopted, and the temperature during the deposition process is strictly controlled below 150°C to avoid the lead wire 3 from desoldering, chip performance degradation, or packaging bracket 1 from being deformed due to high temperature.
[0058] More importantly, vapor deposition technology utilizes the adsorption and reaction of precursor gases on the substrate surface to form films. Compared with liquid phase coating or spraying, it has excellent conformability and can uniformly cover microstructures with large aspect ratios without relying on liquid flow, avoiding problems such as liquid accumulation, bubbles or excessively thick edges that are common in liquid phase processes.
[0059] S303. Perform plasma surface activation etching on the nano-protective film to form a micro-rough structure on the surface of the nano-protective film and introduce polar groups. In one optional implementation of this embodiment, the plasma surface activation etching process utilizes high-energy plasma to bombard and modify the surface of the nano-protective film 4. On the one hand, physical etching constructs a nanoscale micro-rough structure on the film surface, increasing the actual contact area between the subsequent encapsulating colloid and the film and providing mechanical anchoring points. On the other hand, chemical reactions introduce highly polar groups such as hydroxyl, carbonyl, carboxyl, siloxane, or epoxy groups in situ on the film surface, significantly improving the surface energy. This dual mechanism of "physical micro-roughening" and "chemical polar modification" completely changes the defects of traditional hydrophobic protective films, which have low surface energy and are difficult to bond firmly with encapsulating colloids.
[0060] It should be noted that this step needs to be completed before filling the encapsulating colloid, i.e. before step S304. If this step is omitted or its timing is adjusted, even if there is a nano-protective film 4, the encapsulating colloid cannot be fully wetted and spread on its surface, which will still lead to interface delamination failure.
[0061] In an optional implementation of this embodiment, the plasma surface activation etching process is performed using oxygen-containing plasma, and the working gas of the oxygen-containing plasma includes oxygen.
[0062] Specifically, oxygen was chosen as the working gas because oxygen plasma can generate a high concentration of active oxygen atoms and oxygen free radicals during glow discharge. These high-energy particles not only have sufficient kinetic energy to physically bombard the surface of the nano-protective film 4, but can also undergo oxidation reactions with organic molecules on the film surface. Compared to traditional solutions where inert gases such as argon can only provide physical sputtering, or nitrogen may introduce unintended nitrogen-containing groups, oxygen plasma can introduce highly polar groups such as hydroxyl, carbonyl, and carboxyl groups in situ while achieving surface micro-roughening. This synergistic effect of physical and chemical modification is key to improving interfacial adhesion.
[0063] In one optional implementation of this embodiment, the power of the plasma surface activation etching process is 100W-500W, and the processing time is 30s-120s.
[0064] Specifically, within this parameter range, the bombardment energy of high-energy oxygen plasma on the surface of the nano-protective film 4 is moderate, which can effectively remove the weak boundary layer on the surface and break some molecular chains to generate active sites, without causing excessive etching of the film body or damage to the underlying leads due to excessive energy.
[0065] In an optional implementation of this embodiment, the encapsulation method further includes: After plasma surface activation etching of the nano-protective film, the non-coated areas on the light-emitting device are demasked.
[0066] Specifically, after performing plasma surface activation etching on the nano-protective film 4, the shielding layer 6 on the non-coated area of the light-emitting device is removed.
[0067] Here, the masking layer 6 needs to be removed to prevent it from affecting the light-emitting effect of the light-emitting device.
[0068] S304. Fill the cup-shaped encapsulating colloid into the top metal layer of the light-emitting device, and the encapsulating colloid covers the light-emitting chip and leads to form the finished light-emitting device.
[0069] In an optional implementation of this embodiment, after the surface activation treatment in step S303 is completed, the encapsulating colloid 5 is immediately applied by dispensing to fill the surface of the activated nano-protective film 4 within the cup 13 of the top metal layer 11 of the light-emitting device. Since the surface of the nano-protective film 4 at this time possesses both a microscopic rough structure and a high density of polar groups, the encapsulating colloid 5, driven by both capillary action and chemical affinity, can fully fill the microscopic pits and form hydrogen bonds or chemical bonds with the polar groups, thereby achieving a high-strength interfacial bond.
[0070] In summary, Embodiment 2 of this invention provides a packaging method for a light-emitting device, used to package the light-emitting device in Embodiment 1. By sequentially performing nano-protective film deposition and plasma surface activation etching after wire bonding and before filling the encapsulating colloid, a synergistic improvement in protection and adhesion performance is achieved. Specifically, the vapor deposition of the nano-protective film achieves full-domain dense coverage of the complex three-dimensional structure of the light-emitting chip, leads, and packaging bracket, effectively blocking the intrusion path of external corrosive media. The plasma surface activation etching process simultaneously completes physical micro-roughening and chemical polarity modification on the film surface. The resulting nanoscale micro-rough structure increases the effective contact area and provides mechanical anchoring force, while the introduced polar functional groups significantly increase the surface energy and form hydrogen bonds or chemical bonds with the encapsulating colloid. This dual enhancement mechanism of "physical intercalation + chemical bonding" completely overcomes the defect of weak interfacial bonding between the protective layer and the colloid in traditional packaging, significantly suppresses delamination failure of the device under harsh conditions such as temperature cycling and ultrasonic shock, and greatly improves the long-term reliability of the light-emitting device in high-end application scenarios such as outdoor and automotive applications.
[0071] Example 3 Embodiment 3 of the present invention provides a display panel, which includes the light-emitting device in Embodiment 1, and the display panel adopts an encapsulation form of on-board potting.
[0072] In an optional implementation of this embodiment, a plurality of light-emitting devices as described in Embodiment 1 are soldered onto the display panel, and a GOB board potting encapsulation method is adopted. Specifically, GOB (Glue On Board) display panels are a packaging technology that improves upon traditional SMD (Surface Mount LED) displays. Its core process involves filling and covering the surface of a PCB substrate with already soldered light-emitting devices with a special optically and thermally conductive nano-level transparent potting material, thus forming an integrated protective layer. This technology was primarily developed to address the problems of physical gaps between the light-emitting devices in traditional SMD displays, which can easily lead to LED failures or malfunctions during installation, disassembly, or exposure to external forces.
[0073] Furthermore, the core advantages of GOB display panels include: 1. Superior protection ("Ten-proof" technology) The potting layer completely isolates the light-emitting device from the external environment, giving it excellent waterproof, moisture-proof, dustproof, impact-proof, shockproof, anti-static, salt spray-proof, oxidation-proof, blue light-proof, and vibration-proof capabilities. This greatly reduces the damage rate of the LED chips, making it especially suitable for humid, dusty, or frequently disassembled environments (such as rental screens, public transportation, and outdoor environments).
[0074] 2. Improved display effect After being processed by the GOB process, the originally granular pixel surface is transformed into a flat plane, realizing the transformation from a point light source to a surface light source. This makes the screen emit light more evenly, the picture clearer and more transparent, and at the same time, it can effectively eliminate moiré patterns, improve contrast, and expand the viewing angle (both horizontally and vertically approaching 180°).
[0075] 3. Stability and extended lifespan The potting material not only provides physical protection, but its excellent thermal conductivity also helps the screen dissipate heat, thereby reducing the failure rate of LED beads, making the screen operate more stably, and effectively extending the overall lifespan of the display.
[0076] The above provides a detailed description of a light-emitting device, a packaging method for the light-emitting device, and a display panel provided by the present invention. Those skilled in the art will understand that all or part of the steps in the various methods of the above embodiments can be implemented by a program instructing related hardware. The program can be stored in a computer-readable storage medium, which may include: read-only memory (ROM), random access memory (RAM), magnetic disk, or optical disk, etc.
[0077] Furthermore, the embodiments of the present invention have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.
Claims
1. A light-emitting device, characterized in that, The light-emitting device includes: A packaging bracket, the packaging bracket including a top metal layer and bottom pins, wherein a cup is disposed on the top metal layer; A light-emitting chip is disposed on the top metal layer of the packaging bracket, and the light-emitting chip is located in a bowl on the top metal layer; Lead wires, the lead wires connecting the light-emitting chip to the top metal layer of the packaging bracket; A nano-protective film, wherein the nano-protective film covers the coating area on the surface of the light-emitting device; An encapsulating colloid covers the light-emitting chip and leads, and the encapsulating colloid also covers the nano-protective film; The surface of the nano-protective film has a micro-rough structure, and polar groups are distributed on the surface of the nano-protective film.
2. The light-emitting device as described in claim 1, characterized in that, The nano-protective film continuously covers the surfaces of the packaging bracket, the light-emitting chip, and the leads.
3. The light-emitting device as described in claim 2, characterized in that, The coverage area of the nano-protective film includes: The first coating area is located at the bend of the edge of the top metal layer; The second coating area is located on the outer wall of the cup of the top metal layer; The third coating area is located on the inner wall of the cup of the top metal layer; The fourth coating area is located at the bottom of the cup of the top metal layer; The fifth coating area is located on the exposed surface of the light-emitting chip, including the top surface and the side surface of the light-emitting chip; The sixth coating region is located on the surface of the lead.
4. The light-emitting device as described in claim 1, characterized in that, The thickness of the nano-protective film is 200nm-300nm.
5. The light-emitting device as described in claim 1, characterized in that, The material of the nano-protective film includes modified organosilicon or modified siloxane; The polar groups distributed on the surface of the nano-protective film include at least one of hydroxyl, carbonyl, carboxyl, siloxane, or epoxy groups.
6. The light-emitting device as described in claim 1, characterized in that, The surface water droplet angle of the nano-protective film is 40°-60°.
7. The light-emitting device as described in claim 1, characterized in that, The micro-rough structure includes an array of nano-pits, wherein the depth of the nano-pits in the array is 20nm-30nm and the diameter is 50nm-200nm.
8. A method for packaging a light-emitting device, the method being used to package the light-emitting device according to any one of claims 1-7, characterized in that, The encapsulation method includes: The non-coated areas on the surface of the light-emitting device are masked. A nano-protective film is deposited in the coating area on the surface of the light-emitting device; The nano-protective film is subjected to plasma surface activation etching treatment to form a micro-rough structure on the surface of the nano-protective film and introduce polar groups. An encapsulating colloid is filled into the cup-shaped metal layer on the top surface of the light-emitting device. The encapsulating colloid covers the light-emitting chip and leads to form the finished light-emitting device.
9. The packaging method as described in claim 8, characterized in that, The deposition of a nano-protective film on the surface of the light-emitting device includes: A nano-protective film is deposited on the surface of the light-emitting device using a low-temperature vapor deposition process.
10. The packaging method as described in claim 8, characterized in that, The plasma surface activation etching process is performed using oxygen-containing plasma, and the working gas of the oxygen-containing plasma includes oxygen.
11. The packaging method as described in claim 8, characterized in that, The encapsulation method further includes: After plasma surface activation etching of the nano-protective film, the non-coated areas on the light-emitting device are demasked.
12. A display panel, the display panel comprising the light-emitting device according to any one of claims 1-7, characterized in that, The display panel is encapsulated using an on-board potting method.