Light emitting panel and method of manufacturing the same, light emitting device

Abstract

The embodiment of the present disclosure provides a light-emitting panel, a preparation method thereof and a light-emitting device. The light-emitting panel comprises: a driving substrate; a plurality of light-emitting devices located on one side of the driving substrate, adjacent light-emitting devices are separated from each other, the light-emitting device comprises a light-emitting unit, the light-emitting unit comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked, the light-emitting device further comprises a first electrode and a second electrode; an insulating structure layer located on the side of the plurality of light-emitting units facing the driving substrate, the first electrode and the second electrode are both located on the side of the insulating structure layer facing the driving substrate, the first electrode and the second electrode are respectively coupled with the first semiconductor layer and the second semiconductor layer, and the first electrode and the second electrode are both connected with the driving substrate. The present disclosure improves the pixel definition, increases the heat dissipation area, and can be suitable for series connection of light-emitting devices.

Description

Technical Field

[0001] This disclosure relates to the field of display technology, and in particular to a light-emitting panel, a method for preparing the same, and a light-emitting device. Background Technology

[0002] Light-emitting diodes (LEDs) include mini LEDs (submillimeter-sized LEDs) and micro LEDs (micro LEDs). As a sub-segment of display lighting, LEDs offer higher pixel density, better color performance, and lower energy consumption.

[0003] Currently, LEDs are increasingly being used in large-size products, such as mobile phones, video walls, smart cars, and projection products. However, in large-size products, LED products suffer from issues such as low pixel resolution and insufficient brightness to meet requirements. Summary of the Invention

[0004] This disclosure provides a light-emitting panel and its preparation method, as well as a light-emitting device, to solve or alleviate one or more technical problems in the prior art.

[0005] As a first aspect of the present disclosure, an embodiment of the present disclosure provides a light-emitting panel, including:

[0006] Drive substrate;

[0007] Multiple light-emitting devices are located on one side of a driving substrate. Adjacent light-emitting devices are separated from each other. Each light-emitting device includes a light-emitting unit, which includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked together. The light-emitting device also includes a first electrode and a second electrode.

[0008] An insulating structure layer is located on the side of the multiple light-emitting units facing the driving substrate. The first electrode and the second electrode are both located on the side of the insulating structure layer facing the driving substrate. The first electrode and the second electrode are coupled to the first semiconductor layer and the second semiconductor layer, respectively. The first electrode and the second electrode are both connected to the driving substrate.

[0009] In some embodiments, an isolation gap is provided between adjacent light-emitting units. The adjacent light-emitting units include a first light-emitting unit and a second light-emitting unit. The first light-emitting unit includes a first sidewall corresponding to the isolation gap, and the second light-emitting unit includes a second sidewall corresponding to the isolation gap.

[0010] The insulating structure layer includes a first reflective layer, which includes a first reflective portion located on a first sidewall and a second reflective portion located on a second sidewall.

[0011] In some embodiments, the first reflective layer includes a Bragg reflective layer, and the orthographic projection of the light-emitting unit on the driving substrate is located within the orthographic projection of the Bragg reflective layer on the driving substrate.

[0012] In some embodiments, the first reflective layer includes a metal reflective layer, the orthographic projection of the light-emitting unit on the driving substrate is located within the orthographic projection of the metal reflective layer on the driving substrate, and the metal reflective layer is provided with a cutout for avoiding the second electrode.

[0013] In some embodiments, the first electrode is coupled to a metal reflective layer.

[0014] In some embodiments,

[0015] The light-emitting panel also includes a barrier wall located between adjacent light-emitting units. The barrier wall is located on the side of the light-emitting unit away from the driving substrate, and the orthographic projection of the barrier wall on the driving substrate at least partially overlaps with the orthographic projection of the isolation gap on the driving substrate.

[0016] In some embodiments, a second reflective layer is also included, which is disposed on the surface of the retaining wall.

[0017] In some embodiments, the insulating structure layer is provided with a first via and a second via, the first electrode is coupled to the first semiconductor layer through the first via, and the second electrode is coupled to the second semiconductor layer through the second via;

[0018] The orthographic projection of the light-emitting unit on the driving substrate includes a quadrilateral. The first diagonal of the quadrilateral is projected onto the driving substrate through the first via and through the second via.

[0019] In some embodiments, the first semiconductor layer is closer to the driving substrate than the second semiconductor layer, the light-emitting unit is provided with a mesa structure located on the second semiconductor layer, and the orthographic projection of the second via on the driving substrate is located within the orthographic projection of the mesa structure on the driving substrate.

[0020] In some embodiments, the surface of the light-emitting unit facing away from the driving substrate has a preset roughness.

[0021] As a second aspect of this disclosure, this disclosure provides a method for preparing a light-emitting panel, comprising:

[0022] Multiple light-emitting units are formed on a substrate, and an isolation channel is provided between adjacent light-emitting units. Each light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked together.

[0023] An insulating structure layer is formed on the side of the multiple light-emitting units that faces away from the substrate;

[0024] A first electrode and a second electrode are formed on the side of the insulating structure layer away from the substrate, and the first electrode and the second electrode are coupled to the first semiconductor layer and the second semiconductor layer, respectively.

[0025] The first electrode and the second electrode are connected to the driving substrate.

[0026] In some embodiments, a plurality of light-emitting units are formed on a substrate, and an isolation channel is provided between adjacent light-emitting units, including:

[0027] An epitaxial layer is grown on one side of the substrate. The epitaxial layer includes a second semiconductor thin film, an active thin film, and a first semiconductor thin film stacked together.

[0028] The epitaxial layer is etched to form an isolation channel between adjacent light-emitting units. At least the first semiconductor thin film and the active thin film are etched away in a predetermined area to expose part of the surface of the second semiconductor thin film. The exposed surface of the second semiconductor thin film forms a mesa structure.

[0029] In some embodiments, it also includes:

[0030] Thin the substrate to a preset thickness;

[0031] The substrate material located in the light-emitting unit area is removed by etching process, and the substrate material located at the isolation channel position forms a barrier.

[0032] A second reflective layer is formed on the surface of the retaining wall.

[0033] As a third aspect of the present disclosure, the present disclosure provides a light-emitting device, including a light-emitting panel according to any one of the present disclosures.

[0034] In the technical solution of this disclosure, adjacent light-emitting devices are separated from each other. Therefore, the light-emitting units within adjacent light-emitting devices are separate and independent of each other. The two electrodes of one light-emitting device are also separate and independent from the two electrodes of another adjacent light-emitting device. Considering one light-emitting device as a pixel, two adjacent pixels are separate and independent. Thus, compared to related technologies, the light-emitting boundaries of adjacent pixels in the light-emitting panel of this disclosure are easier to distinguish, improving pixel clarity. Furthermore, each light-emitting device has an independent light-emitting unit and two electrodes, increasing the contact area between the light-emitting device and the air, thereby increasing the heat dissipation area and improving the heat dissipation effect, which is beneficial for application in high-power light-emitting panels. Moreover, each light-emitting device has an independent first electrode and second electrode, both of which are connected to the driving substrate. Therefore, by setting the circuit in the driving substrate, multiple light-emitting devices can be connected in parallel or in series, adapting to diverse circuit designs and improving the control versatility of the light-emitting panel.

[0035] The above overview is for illustrative purposes only and is not intended to be limiting in any way. Further aspects, embodiments, and features of this disclosure will become readily apparent from the accompanying drawings and the following detailed description, in addition to the illustrative aspects, embodiments, and features described above. Attached Figure Description

[0036] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the various drawings denote the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings depict only some embodiments according to this disclosure and should not be construed as limiting the scope of this disclosure.

[0037] Figure 1 This is a schematic diagram of the manufacturing process of an LED;

[0038] Figure 2 for Figure 1 The diagram shows the LED connected to the driver substrate.

[0039] Figure 3 This is a schematic cross-sectional view of the light-emitting panel in one embodiment of the present disclosure;

[0040] Figure 4 This is a schematic diagram of the orthographic projection of the light-emitting device facing the driving substrate on the driving substrate side in one embodiment of the present disclosure;

[0041] Figure 5 This is a cross-sectional schematic diagram of the light-emitting panel after the epitaxial layer is formed during the fabrication process of an embodiment of the present disclosure;

[0042] Figure 6A This is a cross-sectional schematic diagram of a light-emitting panel after the light-emitting unit has been formed during the fabrication process of an embodiment of the present disclosure;

[0043] Figure 6B for Figure 6A View from direction A;

[0044] Figure 7A This is a cross-sectional schematic diagram of the light-emitting panel after the insulating structure layer has been formed during the fabrication process of an embodiment of the present disclosure;

[0045] Figure 7B for Figure 7A View from direction A;

[0046] Figure 8A This is a cross-sectional schematic diagram showing the formation of the first and second vias during the fabrication process of a light-emitting panel according to an embodiment of this disclosure;

[0047] Figure 8B for Figure 8A View from direction A;

[0048] Figure 9A This is a cross-sectional schematic diagram of the light-emitting panel after the formation of the first and second electrodes during the fabrication process of an embodiment of the present disclosure;

[0049] Figure 9B for Figure 9A View from direction A;

[0050] Figure 10 This is a cross-sectional schematic diagram of the light-emitting panel after the formation of the first and second electrodes during the fabrication process of another embodiment of the present disclosure;

[0051] Figure 11 This is a schematic cross-sectional view of the light-emitting device bonded to the driving substrate.

[0052] Explanation of reference numerals in the attached figures:

[0053] 10. Light-emitting unit; 11. Transparent conductive layer; 12. First semiconductor layer; 13. Active layer; 14. Second semiconductor layer; 141. Mesa structure; 15. First passivation layer; 16. Bragg reflector layer; 17. Metal reflector layer; 18. Second passivation layer; 100. Substrate; 200. Driving substrate; 201. First bonding pad; 202. Second bonding pad;

[0054] 101. First electrode; 102. Second electrode; 104. First sidewall; 105. Second sidewall;

[0055] 41. Retaining wall; 42. Second reflective layer;

[0056] 51. First reflective layer; 511. First reflective part; 512. Second reflective part; 61. Isolation channel. Detailed Implementation

[0057] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of this disclosure, and different embodiments can be combined arbitrarily without conflict. Therefore, the drawings and description are considered to be exemplary in nature and not restrictive.

[0058] The light-emitting diode (LED) in this disclosure can be a mini light-emitting diode (Mini LED) or a micro light-emitting diode (Micro LED).

[0059] Figure 1 This is a schematic diagram of the manufacturing process of an LED in related technologies. For example... Figure 1As shown, an epitaxial layer is grown on a substrate 100. From bottom to top, the epitaxial layer comprises a second semiconductor thin film 14', an active thin film 13', a first semiconductor thin film 12', and a transparent conductive thin film 11'. The epitaxial layer is etched, but the second semiconductor thin film is not etched through, thus forming multiple LEDs. Each LED comprises, from bottom to top, a second semiconductor layer 14, an active layer 13, a first semiconductor layer 12, and a transparent conductive layer 11. Because the second semiconductor thin film is not etched through, the second semiconductor layers 14 in each LED are connected into a single structure. Then, a first passivation layer 15 and a Bragg reflector layer 16 (Distributed Bragg Reflector, DBR) are sequentially formed on the upper side of the LED; a metal reflector layer 17 is formed on the upper side of the Bragg reflector layer 16, and the metal reflector layer 17 is provided with a first opening K3 corresponding to the LED, the first opening K3 exposing a portion of the surface of the Bragg reflector layer 16; then, a second passivation layer 18 is formed on the upper side of the metal reflector layer 17, and the second passivation layer 18, the Bragg reflector layer 16 and the first passivation layer 15 within the area defined by the first opening K3 are etched to form a second opening K4, the second opening K4 exposing a portion of the surface of the transparent conductive layer 11; a positive electrode 19 of the LED is formed at the position of the second opening K4, the positive electrode 19 is coupled to the transparent conductive layer 11, and then coupled to the first semiconductor layer 12.

[0060] Figure 2 for Figure 1 The diagram shown illustrates the connection between the LED and the driver substrate. Figure 2 As shown, Figure 1 Multiple LEDs are formed and disposed on a driving substrate 200. The positive electrode 19 of each LED is bonded to a corresponding pad 21 on the driving substrate 200. The second semiconductor layer 14 of the multiple LEDs is connected to the driving substrate 200 through a cathode ring 30. The driving substrate 200 controls the light emission of each LED. Figure 2 In the light-emitting panel, each LED can be considered a pixel. From Figure 1 and Figure 2 As can be seen, the second semiconductor layers 14 of each LED are interconnected into a single structure. This causes the light emitted by the LEDs to crosstalk to adjacent LEDs through the second semiconductor layers 14, resulting in inter-pixel crosstalk. Consequently, the boundaries between adjacent LED pixels are not easily distinguishable, reducing pixel clarity. Furthermore, because the second semiconductor layers 14 of each LED are interconnected into a single structure, the LEDs on the driving substrate 200 can only be connected in parallel, making it difficult to achieve series connection and hindering diverse circuit design. The interconnected second semiconductor layers 14 of each LED also impede LED heat dissipation.

[0061] To address some problems in related technologies, embodiments of this disclosure provide a light-emitting panel.

[0062] Figure 3 This is a schematic cross-sectional view of the light-emitting panel in one embodiment of this disclosure. Figure 3 As shown, the light-emitting panel includes a driving substrate 200, multiple light-emitting devices, and an insulating structure layer 50. The multiple light-emitting devices are located on one side of the driving substrate 200, with adjacent light-emitting devices separated from each other. Each light-emitting device includes a light-emitting unit 10. Since adjacent light-emitting devices are separated from each other, adjacent light-emitting units 10 are also separated from each other; for example, light-emitting unit 10a and light-emitting unit 10b are separated from each other. That is, adjacent light-emitting units 10 have gaps, and adjacent light-emitting units 10 are independent of each other and not connected into a single structure.

[0063] like Figure 3 As shown, the light-emitting unit 10 includes a first semiconductor layer 12, an active layer 13, and a second semiconductor layer 14 stacked together. The light-emitting unit 10 may also include a transparent conductive layer 11, located on the side of the first semiconductor layer 12 facing away from the active layer 13. Adjacent light-emitting units 10 are separated from each other; therefore, the film layers in one light-emitting unit 10 are also separated from, independent of, and not connected to, the film layers in another light-emitting unit 10. For example, Figure 3 In the light-emitting unit 10a, the second semiconductor layer 14 and the second semiconductor layer 14 in the light-emitting unit 10b are separate from each other, independent of each other, and not connected.

[0064] An insulating structure layer 50 is located on the side of the plurality of light-emitting units 10 facing the driving substrate 200. The light-emitting device also includes a first electrode 101 and a second electrode 102, both of which are located on the side of the insulating structure layer 50 facing the driving substrate 200. The first electrode 101 and the second electrode 102 are coupled to the first semiconductor layer 12 and the second semiconductor layer 14, respectively, and both the first electrode 101 and the second electrode 102 are connected to the driving substrate 200.

[0065] Since adjacent light-emitting devices are separated from each other, the first electrode 101 and the second electrode 102 in adjacent light-emitting devices are also separated from each other. That is to say, the first electrode 101 and the second electrode 102 in one light-emitting device are separate from and independent of the first electrode 101 and the second electrode 102 in another adjacent light-emitting device. In other words, the first electrode 101 and the second electrode 102 in one light-emitting device belong only to that light-emitting device. Each light-emitting device has a corresponding first electrode 101 and second electrode 102, and both the first electrode 101 and the second electrode 102 are connected to the driving substrate 200. For example, the first electrode 101 and the second electrode 102 are both bonded to the driving substrate 200.

[0066] In this embodiment, adjacent light-emitting devices are separated from each other. Therefore, the light-emitting units 10 in adjacent light-emitting devices are separate and independent of each other. The two electrodes of one light-emitting device are separate and independent from the two electrodes of another adjacent light-emitting device. Considering one light-emitting device as one pixel, two adjacent pixels are separate and independent of each other. Therefore, compared to… Figure 1 and Figure 2 According to the relevant technology, in the light-emitting panel disclosed herein, the separation of adjacent light-emitting devices makes it easier to distinguish the light-emitting boundaries of adjacent pixels, thereby improving pixel clarity. In addition, each light-emitting device has an independent light-emitting unit 10 and two electrodes, which increases the contact area between the light-emitting device and the air, thereby increasing the heat dissipation area of ​​the light-emitting device and improving the heat dissipation effect, which is beneficial for application in high-power light-emitting panels. Furthermore, each light-emitting device has an independent first electrode 101 and second electrode 102, both of which are connected to the driving substrate 200. Thus, by setting the circuit in the driving substrate 200, not only can multiple light-emitting devices be connected in parallel, but also multiple light-emitting devices can be connected in series, which can adapt to diversified circuit designs and improve the control diversity of the light-emitting panel.

[0067] The light-emitting device in this embodiment includes a light-emitting diode (LED). The LED can be a mini light-emitting diode (Mini LED) or a micro light-emitting diode (Micro LED).

[0068] like Figure 3 As shown, a gap can be provided between adjacent light-emitting units 10 to separate adjacent light-emitting devices from each other. Two adjacent light-emitting units 10 are respectively designated as the first light-emitting unit 10a and the second light-emitting unit 10b, as shown... Figure 3 As shown, the side surface of the first light-emitting unit 10a near the second light-emitting unit 10b is a first sidewall 104, and the side surface of the second light-emitting unit 10b near the first light-emitting unit 10a is a second sidewall 105. The first sidewall 104 and the second sidewall 105 are spaced apart from each other. The first sidewall 104 can be perpendicular to the upper surface of the driving substrate 200, or the first sidewall 104 can be at a preset angle to the upper surface of the driving substrate 200; the second sidewall 105 can be perpendicular to the upper surface of the driving substrate 200, or the second sidewall 105 can be at a preset angle to the upper surface of the driving substrate 200. It is understood that both the first sidewall 104 and the second sidewall 105 are formed by etching; therefore, the orientation of the first sidewall 104 and the second sidewall 105 relative to the upper surface of the driving substrate 200 is determined by the etching process.

[0069] The insulating structure layer 50 includes a first reflective layer 51, which includes a first reflective portion 511 located on the first sidewall 104 and a second reflective portion 512 located on the second sidewall 105. The first reflective portion 511 reflects light rays from the first light-emitting unit 10a that are incident on the first sidewall 104 back to the first light-emitting unit 10a, causing the light rays to exit from above the first light-emitting unit 10a. This not only prevents light rays from the first light-emitting unit from entering the second light-emitting unit 10b through the first sidewall 104 but also improves the forward light emission efficiency of the first light-emitting unit 10a. Similarly, the second reflective portion 512 reflects light rays from the second light-emitting unit 10b that are incident on the second sidewall 105 back to the second light-emitting unit 10b, causing the light rays to exit from above the second light-emitting unit 10b. This not only prevents light rays from the second light-emitting unit 10b from entering the first light-emitting unit 10a through the second sidewall 105 but also improves the forward light emission efficiency of the second light-emitting unit 10b. Therefore, by setting the first reflective part 511 and the second reflective part 512, the light emission efficiency of the corresponding light-emitting device is improved, and crosstalk between adjacent light-emitting devices can be avoided, further improving pixel clarity.

[0070] In one embodiment, the first reflective layer 51 includes a Bragg reflective layer 16, thereby the first reflective portion 511 includes a first Bragg reflective portion, and the second reflective portion 512 includes a second Bragg reflective portion.

[0071] The orthographic projection of the light-emitting unit 10 on the driving substrate 200 lies within the orthographic projection of the Bragg reflector layer 16 on the driving substrate 200, such as... Figure 3 As shown, the Bragg reflector layer 16 can reflect the light emitted from the light-emitting unit 10 toward the lower side, so that the light is emitted from the upper side of the light-emitting unit 10.

[0072] In this article, the lower side of A can be understood as the side of A facing the driving substrate 200; the upper side of A can be understood as the side of A away from the driving substrate 200.

[0073] In another embodiment, the first reflective layer 51 may include a metal reflective layer 17. Thus, the first reflective portion 511 may include a first metal reflective portion, and the second reflective portion 512 may include a second metal reflective portion.

[0074] The orthographic projection of the light-emitting unit 10 on the driving substrate 200 lies within the orthographic projection of the metal reflective layer 17 on the driving substrate 200, such as... Figure 3 As shown, the metal reflective layer 17 can reflect the light emitted downward from the light-emitting unit 10, so that the light is emitted from the upper side of the light-emitting unit 10.

[0075] In one embodiment, the first reflective layer 51 includes a Bragg reflective layer 16 and a metal reflective layer 17 stacked together. In this case, the first reflective portion 511 may include a first Bragg reflective portion and a first metal reflective portion stacked together, and the second reflective portion 512 may include a second Bragg reflective portion and a second metal reflective portion stacked together.

[0076] The insulating structure layer 50 may further include a first passivation layer 15 and a second passivation layer 18, with the first reflective layer 51 located between the first passivation layer 15 and the second passivation layer 18.

[0077] like Figure 3 As shown, the insulating structure layer 50 is provided with a first via K1 and a second via K2. The first electrode 101 is coupled to the transparent conductive layer 11 through the first via K1, and then coupled to the first semiconductor layer 12. The second electrode 102 is coupled to the second semiconductor layer 14 through the second via K2.

[0078] When the first reflective layer 51 includes a metal reflective layer 17, to prevent the first electrode 101 and the second electrode 102 from being connected through the metal reflective layer 17, the metal reflective layer 17 needs to be provided with cutouts 171 to avoid the first electrode 101 and / or the second electrode 102. Figure 3 In this embodiment, the metal reflective layer 17 is provided with a cutout 171 to avoid the second electrode 102. Thus, when the second electrode 102 is connected to the second semiconductor layer 14 through the second via K2, the second electrode 102 will not contact the metal reflective layer 17, thus preventing the first electrode 101 and the second electrode 102 from being short-circuited through the metal reflective layer 17.

[0079] In another embodiment, the metal reflective layer 17 may also be provided with a second cutout for avoiding the first electrode 101, so that the first electrode 101 will not be coupled to the metal reflective layer 17.

[0080] exist Figure 3 In this embodiment, the first electrode 101 is coupled to the metal reflective layer 17. The orthographic projection of the light-emitting unit 10 on the driving substrate 200 lies within the orthographic projection of the metal reflective layer 17 on the driving substrate 200. Therefore, a metal reflective layer 17 is also provided on the sidewall of the light-emitting unit 10. After coupling the metal reflective layer 17 to the first electrode 101, a sidewall electric field is formed between the metal reflective layer 17 on the sidewall and the second semiconductor layer 14. The charge carriers at the edge of the light-emitting unit 10 are driven to the middle region of the light-emitting unit 10 by the sidewall electric field, thereby increasing the radiative recombination ratio and improving the brightness of the light-emitting device.

[0081] The material of the metal reflective layer 17 may include a metal with reflective properties, such as at least one of gold (Au), silver (Ag), aluminum (Al).

[0082] In one embodiment, such as Figure 3 As shown, the orthographic projection of the insulating structure layer 50 on the driving substrate 200 includes a portion of the area located between adjacent light-emitting units 10, that is, the insulating structure layer 50 is connected everywhere.

[0083] To further improve pixel clarity, the light-emitting panel may also include a barrier 41 located between adjacent light-emitting units 10, with the barrier 41 situated on the side of the light-emitting unit 10 facing away from the driving substrate 200. The orthographic projection of the barrier 41 onto the driving substrate 200 does not overlap with the orthographic projection of the light-emitting unit 10 onto the driving substrate 200. The barrier 41 can prevent crosstalk between the light emitted from two adjacent light-emitting units 10 and limit the light emission range of the light-emitting unit 10.

[0084] The light-emitting panel may further include a second reflective layer 42, which is disposed on the surface of the baffle 41, i.e., the second reflective layer 42 can be formed on the surface of the baffle 41. The second reflective layer 42 may be a metal reflective layer 17 or a Bragg reflective layer 16. The second reflective layer 42 can reflect the light emitted from the light-emitting unit 10 onto the surface of the baffle 41 back, so that the light is emitted from the top side of the light-emitting unit 10, further preventing light crosstalk between adjacent light-emitting units 10, improving the forward light emission brightness of the light-emitting device, and further improving pixel clarity.

[0085] The material of the barrier 41 may include silicon. The thickness of the barrier 41 may be 25μm to 35μm, for example, the thickness of the barrier 41 may be 25μm, 30μm or 35μm.

[0086] Figure 4 This is a schematic diagram of the orthographic projection of the light-emitting device facing the driving substrate on the driving substrate side in one embodiment of this disclosure, as shown below. Figure 4 As shown, the orthographic projection of the light-emitting unit 10 on the driving substrate 200 includes a quadrilateral, for example, the orthographic projection of the light-emitting unit 10 on the driving substrate 200 is a rectangle. The first diagonal 103 of the quadrilateral passes through the orthographic projection of the first via K1 on the driving substrate 200, and the first diagonal 103 also passes through the orthographic projection of the second via K2 on the driving substrate 200. That is, the first via K1 and the second via K2 are disposed on one diagonal 103 of the light-emitting unit 10. Thus, when current flows from the first electrode 101 located in the first via K1 to the second electrode 102 located in the second via K2, the current path length is increased, the current spreading effect is improved, and more particles in the active layer 13 can be excited to generate radiative recombination. The area of ​​radiative recombination is larger, which improves the luminous efficiency and the brightness of the light-emitting device. In a specific embodiment, the first via K1 and the second via K2 are disposed as close as possible to their corresponding corners.

[0087] The orthographic projection of the light-emitting unit 10 on the driving substrate 200 is not limited to a quadrilateral, but can also be other polygonal shapes. The first via K1 and the second via K2 can be located at both ends of one of the diagonals 103. The orthographic projection of the light-emitting unit 10 on the driving substrate 200 can also be circular or elliptical, and the first via K1 and the second via K2 can be located at both ends of one of the central axes. For example, if the orthographic projection of the light-emitting unit 10 on the driving substrate 200 is circular, the first via K1 and the second via K2 can be located at both ends of a diameter; if the orthographic projection of the light-emitting unit 10 on the driving substrate 200 is elliptical, the first via K1 and the second via K2 can be located at both ends of the major axis of the ellipse.

[0088] like Figure 3 As shown, the first semiconductor layer 12 is closer to the driving substrate 200 than the second semiconductor layer 14. To expose at least a portion of the second semiconductor layer 14 of the light-emitting unit 10, the light-emitting unit 10 includes a mesa structure 141, and the orthographic projection of the second via K2 onto the driving substrate 200 does not overlap with the orthographic projection of the mesa structure 141 onto the driving substrate 200. When forming the light-emitting unit 10 using an etching process, the mesa structure 141 can be formed by etching, and the second electrode 102 is coupled to the second semiconductor layer 14 through the second via K2.

[0089] In one embodiment, such as Figure 3 As shown, the surface of the light-emitting unit 10 facing away from the driving substrate 200 has a preset roughness. When the upper surface of the light-emitting unit 10 is a smooth surface, light will form a waveguide mode in the light-emitting unit 10 and will not be able to escape. In this embodiment, the upper surface of the light-emitting unit 10 is roughened. After the roughening treatment, the upper surface of the light-emitting unit 10 has a preset roughness, thereby forming a plurality of protrusions 106 on the upper surface of the light-emitting unit 10. These protrusions 106 can couple out the light in the waveguide mode, so that the light is scattered in a diffuse manner, increasing the light escape and improving the light extraction efficiency.

[0090] An embodiment of this disclosure also provides a method for fabricating a light-emitting panel, comprising: forming a plurality of light-emitting units 10 on a substrate 100, wherein an isolation channel 61 is disposed between adjacent light-emitting units 10, and each light-emitting unit 10 includes a first semiconductor layer 12, an active layer 13, and a second semiconductor layer 14 stacked together; forming an insulating structure layer 50 on the side of the plurality of light-emitting units 10 away from the substrate 100; forming a first electrode 101 and a second electrode 102 on the side of the insulating structure layer 50 away from the substrate 100, wherein the first electrode 101 and the second electrode 102 are coupled to the first semiconductor layer 12 and the second semiconductor layer 14, respectively; and connecting the first electrode 101 and the second electrode 102 to a driving substrate 200.

[0091] In one embodiment, a plurality of light-emitting units 10 are formed on a substrate 100, and an isolation channel 61 is provided between adjacent light-emitting units 10. The method includes: growing an epitaxial layer on one side of the substrate 100, the epitaxial layer including a second semiconductor thin film, an active thin film and a first semiconductor thin film stacked together; etching the epitaxial layer to form an isolation channel 61 between adjacent light-emitting units 10; etching away at least the first semiconductor thin film and the active thin film in a predetermined area to expose a portion of the surface of the second semiconductor thin film; and forming a mesa structure 141 on the exposed second semiconductor thin film.

[0092] The method for preparing the light-emitting panel may further include: thinning the substrate 100 to a preset thickness; removing the substrate 100 material located in the region of the light-emitting unit 10 using an etching process, and forming a barrier 41 with the substrate 100 material located at the isolation channel 61; and forming a second reflective layer 42 on the surface of the barrier 41.

[0093] The following is through Figure 3 The fabrication process of the light-emitting panel shown further illustrates the technical solution of the embodiments of this disclosure. It is understood that the term "patterning" as used herein includes processes such as photoresist coating, mask exposure, development, etching, and photoresist stripping when the patterning material is inorganic or metallic; and processes such as mask exposure and development when the patterning material is organic. Evaporation, deposition, coating, and plating mentioned herein are all mature fabrication processes in related technologies.

[0094] Figure 5 This is a cross-sectional schematic diagram of the light-emitting panel after the epitaxial layer is formed during the fabrication process of an embodiment of the present disclosure, as shown below. Figure 5 As shown, an epitaxial layer is grown on one side of the substrate 100. The epitaxial layer includes a second semiconductor thin film, an active thin film, and a first semiconductor thin film stacked together. The epitaxial layer may also include a transparent conductive thin film located on the first semiconductor thin film. In this disclosure, the substrate 100 is also used to form a barrier 41, and the material of the substrate 100 may include silicon.

[0095] The epitaxial layer is etched, and during the etching process, the epitaxial layer is etched through to form an isolation channel 61. The epitaxial layers on both sides of the isolation channel 61 form light-emitting units 10. A transparent conductive film, a first semiconductor film, an active layer 13, and a portion of a second semiconductor film are etched away in a predetermined area, exposing a portion of the surface of the second semiconductor film and forming a mesa structure 141. Figure 6A As shown and Figure 6B As shown, Figure 6A This is a cross-sectional schematic diagram of the light-emitting unit formed during the fabrication process of a light-emitting panel according to an embodiment of the present disclosure. Figure 6B for Figure 6A View from direction A. Figure 6A and Figure 6B It can be seen that the mesa structure 141 is located at a position close to the corner of the light emitting unit 10, and the mesa structure 141 is in communication with the isolation trench 61. In other embodiments, the position of the mesa structure 141 may be set as required, as long as the surface of the second semiconductor thin film is exposed. In this embodiment, the light emitting unit 10 includes a transparent conductive layer 11, a first semiconductor layer 12, an active layer 13 and a second semiconductor layer 14 which are arranged in a stacked manner, and the mesa structure 141 is located on the second semiconductor layer 14. The width of the isolation trench 61 may be set as required, and no specific limitation is made herein.

[0096] One of the first semiconductor layer 12 and the second semiconductor layer 14 may be a P-type doped semiconductor layer, and the other may be an N-type doped semiconductor layer. The P-type doped semiconductor layer may be a P-type doped semiconductor layer containing In x Al y Ga 1-x-y N (0≤x<1, 0≤y<1, 0≤x+y<1), and the p-type impurity may be magnesium. For example, the material of the P-type doped semiconductor layer may include P-type doped gallium nitride (GaN). The N-type doped semiconductor layer may be a n-type nitride semiconductor layer containing In x Al y Ga 1-x-y N (0≤x<1, 0≤y<1, 0≤x+y<1), and the n-type impurity may be silicon. For example, the material of the N-type doped semiconductor layer may include N-type doped gallium nitride (GaN).

[0097] The second semiconductor layer 14 may have a single-layer structure, but in some exemplary embodiments, it may have a multi-layer structure containing different components.

[0098] The active layer 13 may have a multi-quantum well (MQW) structure, in which quantum well layers and quantum barrier layers are alternately stacked with each other. For example, the quantum well layer and the quantum barrier layer may each include In x Al y Ga 1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) with different components. In an example, the quantum well layer may include a component of In x Ga 1-x N (0<x≤1), and the quantum barrier layer may include GaN or AlGaN. The active layer 13 is not limited to the MQW structure, and may have a single quantum well (SQW) structure.

[0099] The material of the transparent conductive layer 11 may be a transparent conductive material, for example, the material of the transparent conductive layer 11 includes at least one of indium tin oxide (ITO), indium zinc oxide (IZO) and the like.

[0100] A first passivation layer 15, a Bragg reflector layer 16, and a metal reflector layer 17 are sequentially formed on the side of the light-emitting unit 10 facing away from the substrate 100. When forming the metal reflector layer 17, it can be deposited on the Bragg reflector layer 16, and then the metal reflector layer 17 is patterned to form a cutout 171. The orthographic projection of the cutout 171 onto the substrate 100 lies within the orthographic projection of the mesa structure 141 onto the substrate 100. This cutout 171 is used to avoid the subsequently formed second electrode 102. A second passivation layer 18 is formed on the metal reflector layer 17, such as... Figure 7A and Figure 7B As shown, Figure 7A This is a cross-sectional schematic diagram of the light-emitting panel after the insulating structure layer has been formed during the fabrication process of an embodiment of the present disclosure. Figure 7B for Figure 7A View A. The material of the first passivation layer 15 may include at least one of silicon oxide, silicon nitride, and silicon oxynitride. The material of the second passivation layer 18 may include at least one of silicon oxide, silicon nitride, and silicon oxynitride.

[0101] The insulating structure layer 50 is patterned to form a first via K1 and a second via K2, as shown below. Figure 8A and Figure 8B As shown, Figure 8A This is a cross-sectional schematic diagram showing the formation of the first and second vias during the fabrication process of a light-emitting panel according to an embodiment of this disclosure. Figure 8B for Figure 8A View A. The orthographic projection of the first via K1 onto the substrate 100 lies within the orthographic projection of the transparent conductive layer 11 onto the substrate 100, exposing a portion of the surface of the transparent conductive layer 11. The orthographic projection of the second via K2 onto the substrate 100 lies inside the boundary of the orthographic projection of the cutout 171 onto the substrate 100, exposing a portion of the surface of the second semiconductor layer 14. When etching the first via K1, carbon tetrafluoride gas can be used to etch the second passivation layer 18 first, followed by chlorine gas to etch the metal reflective layer 17, and then carbon tetrafluoride gas can be used to etch the Bragg reflective layer 16 and the first passivation layer 15, thereby forming the first via K1. A portion of the side surface of the metal reflective layer 17 is exposed through the sidewall of the first via K1. From... Figure 8B It can be seen that the orthographic projection of the light-emitting unit 10 onto the substrate 100 is a quadrilateral, and the first via K1 and the second via K2 are both located on one diagonal 103 of the quadrilateral.

[0102] A first electrode 101 and a second electrode 102 are formed on the side of the insulating structure layer 50 facing away from the substrate 100. The first electrode 101 is coupled to the transparent conductive layer 11 through a first via K1, and further coupled to the first semiconductor layer 12. The first electrode 101 is also coupled to the metal reflective layer 17. The second electrode 102 is coupled to the second semiconductor layer 14 through a second via K2, as shown below. Figure 9A and Figure 9B As shown, Figure 9A This is a schematic cross-sectional view of a light-emitting panel fabrication process according to an embodiment of the present disclosure, after the formation of the first and second electrodes. Figure 9B for Figure 9A The first electrode 101 and the second electrode 102 can be elongated electrodes, thus increasing the surface area of ​​the first electrode 101 and the second electrode 102. The orthogonal projections of the first electrode 101 and the second electrode 102 onto the substrate 100 are both located within the orthogonal projection of the light-emitting unit 10 onto the substrate 100. The light-emitting device includes the light-emitting unit 10, the first electrode 101, and the second electrode 102.

[0103] For example, to form the first electrode 101 and the second electrode 102, a metal thin film can be deposited on the surface of the insulating structure layer 50 on the side opposite to the substrate 100, and then the metal thin film can be patterned to form the first electrode 101 and the second electrode 102. In some cases, the thickness of the first electrode 101 is uniform in all locations, that is, the thickness of the first electrode 101 in the region where the first via K1 is located is equal to the thickness of the first electrode 101 in other regions; and the thickness of the second electrode 102 is uniform in all locations, that is, the thickness of the second electrode 102 in the region where the mesa structure 141 is located is equal to the thickness of the second electrode 102 in the regions where the non-mesa structure 141 is located (including the region where the second electrode 102 is located).

[0104] The surface of the driving substrate 200 is provided with a first solder pad 201 and a second solder pad 202. The first solder pad 201 corresponds to the first electrode 101, and the second solder pad 202 corresponds to the second electrode 102. The first solder pad 201 is coupled to the first metal trace 203 in the driving substrate 200, and the second solder pad 202 is coupled to the second metal trace 204 in the driving substrate 200.

[0105] Multiple light-emitting devices with substrate 100 are inverted on driving substrate 200, and the first electrode 101 and the second electrode 102 are bonded to the first bonding pad 201 and the second bonding pad 202 on the surface of driving substrate 200, as follows: Figure 11As shown. Since the first electrode 101 and the second electrode 102 can be elongated electrodes, the first bonding pad 201 and the second bonding pad 202 are also elongated. This structure increases the bonding area between the electrode and the bonding pad, increases the bonding strength, and further increases the heat dissipation effect of the light-emitting device.

[0106] exist Figure 9A In this embodiment, the first electrode 101 is connected to the transparent conductive layer 11 through the first via K1, and the second electrode 102 is connected to the second semiconductor layer 14 through the second via K2. When the thickness of the first electrode 101 and the second electrode 102 is uniform, due to the presence of the first via K1 and the second via K2, the contact area between the first electrode 101 and the first bonding pad 201 is small, and the contact area between the second electrode 102 and the second bonding pad 202 is small, which may result in a lower bonding strength between the light-emitting device and the driving substrate 200.

[0107] To further improve the bonding strength between the first electrode 101 and the first bonding pad 201, and between the second electrode 102 and the second bonding pad 202, in some embodiments, the surfaces of the first electrode 101 and the second electrode 102 facing the driving substrate 200 are flat, such as... Figure 10 As shown, Figure 10 This is a cross-sectional schematic diagram showing the first and second electrodes formed during the fabrication of a light-emitting panel according to another embodiment of this disclosure. The first electrode 101 and the second electrode 102 have flat surfaces, which can further increase the bonding area between the electrodes and the bonding pads, thereby further improving the bonding strength.

[0108] In order to make the first electrode 101 and the second electrode 102 have flat surfaces, a metal thin film of a certain thickness can be deposited on the side of the insulating structure layer 50 away from the substrate 100 to ensure that the first via K1 and the second via K2 are filled. Then, CMP (Chemical Mechanical Polishing) and / or patterning processes are performed to form the first electrode 101 and the second electrode 102.

[0109] In other embodiments, in order to make the upper surfaces of the first electrode 101 and the second electrode 102 have flat surfaces, it can be obtained after the first electrode and the second electrode are formed. Figure 9A After establishing the structure shown, conductive material can be filled at the locations of the first via K1 and the second via K2 to make the surface of the structure to be connected to the light-emitting device and the first solder pad 201 and the second solder pad 202 flat. The method of filling the conductive material can be set as needed, for example, electroplating or deposition processes can be used; the specific material of the conductive material can be set as needed, and copper or other conductive metals can be used, which is not limited here.

[0110] The substrate 100 is thinned to a predetermined thickness, which ranges from 25 μm to 35 μm. An etching process is used to form a barrier 41 on the substrate 100 material corresponding to the region where the light-emitting unit 10 is located, at the location of the isolation channel 61. Then, a second reflective layer 42 is formed on the surface of the barrier 41. The material of the second reflective layer 42 may include a metal, such as at least one of gold, silver, and aluminum. Figure 3 As shown. The light-emitting unit 10 is located within the groove 411 enclosed by the retaining wall 41. Figure 3 Two light-emitting units 10a and 10b are shown. Light-emitting unit 10a is located in groove 411a, and light-emitting unit 10b is located in groove 411b.

[0111] The surface of the light-emitting unit 10 facing away from the driving substrate 200 can be roughened to form a surface with a preset roughness, resulting in multiple protrusions 106 on the surface of the light-emitting unit 10 facing away from the driving substrate 200, such as... Figure 3 As shown.

[0112] In one embodiment, a color-transfer layer can also be filled within the groove 411. When the light emitted by the light-emitting unit 10 is blue light, the color-transfer layer can be selected to use yellow phosphor to convert the blue light into white light. Such a light-emitting panel can be used as a smart vehicle light.

[0113] Understandably, the specific material of the color conversion layer can be set as needed. When pixels of three colors, R, G, and B, are required, different color conversion layers can be selected for pixels of different colors to achieve color display.

[0114] This disclosure also provides a light-emitting device, which includes the light-emitting panel in any embodiment of this disclosure. The light-emitting panel in this disclosure can be assembled in a display device as a display panel, or it can be assembled in a display device as a light source. The display device can be any product or component with display function, such as electronic paper, mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, navigator, wearable display device, vehicle light, etc.

[0115] The light-emitting panel in this embodiment can also be used as a light source in lighting products.

[0116] Exemplarily, the light-emitting device may further include an optomechanical system, which may be disposed on the light-emitting side of the light-emitting panel. The optomechanical system may include optical components, such as one or more lenses, and is capable of modulating (e.g., magnifying) the image displayed on the light-emitting panel. This light-emitting device can be applied to vehicle lights. In related technologies, vehicle lights using LEDs have poor image clarity, inaccurate image display, and are prone to misjudgment. When the light-emitting device of this embodiment is applied to vehicle lights, a barrier 41 is provided between two adjacent pixels, and the pixel brightness is greatly improved, thereby improving image clarity, making the image display more accurate, ensuring better image performance and higher resolution, and meeting the requirements for higher quality image projection.

[0117] In the description of this specification, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.

[0118] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this disclosure, "multiple" means two or more, unless otherwise explicitly specified.

[0119] In this disclosure, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a communication connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to the specific circumstances.

[0120] In this disclosure, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0121] The foregoing disclosure provides many different implementations or examples for carrying out different structures of this disclosure. To simplify this disclosure, the components and arrangements of specific examples are described above. Of course, these are merely examples and are not intended to limit this disclosure. Furthermore, reference numerals and / or reference letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various implementations and / or arrangements discussed.

[0122] The above are merely specific embodiments of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any person skilled in the art can easily conceive of various variations or substitutions within the technical scope disclosed in this disclosure. Different parts of different embodiments can be combined with each other without conflict, and these should all be covered within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A light-emitting panel, characterized in that, include: Drive substrate; Multiple light-emitting devices are located on one side of the driving substrate, with adjacent light-emitting devices separated from each other. Each light-emitting device includes a light-emitting unit, which includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked together. The light-emitting device also includes a first electrode and a second electrode. An insulating structure layer is located on the side of the plurality of light-emitting units facing the driving substrate. The first electrode and the second electrode are both located on the side of the insulating structure layer facing the driving substrate. The first electrode and the second electrode are respectively coupled to the first semiconductor layer and the second semiconductor layer. The first electrode and the second electrode are both connected to the driving substrate.

2. The light-emitting panel according to claim 1, characterized in that, An isolation gap is provided between adjacent light-emitting units. The adjacent light-emitting units include a first light-emitting unit and a second light-emitting unit. The first light-emitting unit includes a first sidewall corresponding to the isolation gap, and the second light-emitting unit includes a second sidewall corresponding to the isolation gap. The insulating structure layer includes a first reflective layer, which includes a first reflective portion located on the first sidewall and a second reflective portion located on the second sidewall.

3. The light-emitting panel according to claim 2, characterized in that, The first reflective layer includes a Bragg reflective layer, and the orthographic projection of the light-emitting unit on the driving substrate is located within the orthographic projection of the Bragg reflective layer on the driving substrate.

4. The light-emitting panel according to claim 2, characterized in that, The first reflective layer includes a metal reflective layer, and the orthographic projection of the light-emitting unit on the driving substrate is located within the orthographic projection of the metal reflective layer on the driving substrate. The metal reflective layer is provided with a cutout for avoiding the second electrode.

5. The light-emitting panel according to claim 4, characterized in that, The first electrode is coupled to the metal reflective layer.

6. The light-emitting panel according to claim 1, characterized in that, The light-emitting panel also includes a baffle wall located between adjacent light-emitting units. The baffle wall is located on the side of the light-emitting unit away from the driving substrate, and the orthographic projection of the baffle wall on the driving substrate at least partially overlaps with the orthographic projection of the isolation gap on the driving substrate.

7. The light-emitting panel according to claim 6, characterized in that, It also includes a second reflective layer disposed on the surface of the retaining wall.

8. The light-emitting panel according to claim 1, characterized in that, The insulating structure layer is provided with a first via and a second via. The first electrode is coupled to the first semiconductor layer through the first via, and the second electrode is coupled to the second semiconductor layer through the second via. The orthographic projection of the light-emitting unit on the driving substrate includes a quadrilateral, the first diagonal of which passes through the orthographic projection of the first via on the driving substrate and the second via on the driving substrate.

9. The light-emitting panel according to claim 8, characterized in that, The first semiconductor layer is closer to the driving substrate than the second semiconductor layer. The light-emitting unit is provided with a mesa structure located on the second semiconductor layer. The orthographic projection of the second via on the driving substrate is located within the orthographic projection of the mesa structure on the driving substrate.

10. The light-emitting panel according to any one of claims 1-9, characterized in that, The surface of the light-emitting unit facing away from the driving substrate has a preset roughness.

11. A method for preparing a light-emitting panel, characterized in that, include: Multiple light-emitting units are formed on a substrate, and an isolation channel is provided between adjacent light-emitting units. Each light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked together. An insulating structure layer is formed on the side of the plurality of light-emitting units facing away from the substrate; A first electrode and a second electrode are formed on the side of the insulating structure layer opposite to the substrate, and the first electrode and the second electrode are respectively coupled to the first semiconductor layer and the second semiconductor layer; The first electrode and the second electrode are connected to the driving substrate.

12. The method according to claim 11, characterized in that, Multiple light-emitting units are formed on a substrate, and isolation channels are provided between adjacent light-emitting units, including: An epitaxial layer is grown on one side of the substrate, the epitaxial layer comprising a second semiconductor thin film, an active thin film and a first semiconductor thin film stacked together; The epitaxial layer is etched to form the isolation channel between adjacent light-emitting units. At least the first semiconductor film and the active film are etched away in a preset area to expose a portion of the surface of the second semiconductor film. The exposed surface of the second semiconductor film forms a mesa structure.

13. The method according to claim 11, characterized in that, Also includes: The substrate is thinned to a predetermined thickness; The substrate material located in the light-emitting unit area is removed by an etching process, and the substrate material located at the isolation trench position forms a barrier. A second reflective layer is formed on the surface of the retaining wall.

14. A light-emitting device, characterized in that, Includes the light-emitting panel according to any one of claims 1-10.

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