Organic solar cell with lateral extraction electrodes and method for producing same

Abstract

The application provides an organic solar cell with a lateral lead-out electrode and a preparation method thereof, and belongs to the technical field of photovoltaic devices. In the application, the bus bar is attached to the lead-out electrode layer. Since the bus bar no longer covers the surface of the sub-cell, 100% of the effective area of the sub-cell area can be used for light absorption and photoelectric conversion, thereby improving the current output and energy conversion efficiency of the organic solar cell. The bus bar is physically isolated from the sub-cell, so that even if the organic solar cell is laminated and packaged, the hard bus bar cannot contact and pierce the functional layer, thereby fundamentally avoiding the internal short circuit problem caused by mechanical stress and ensuring the yield and reliability of the organic solar cell. Moreover, the products generated by oxidation or corrosion of the bus bar in a harsh environment are limited in the electrode lead-out area of the glass substrate and cannot directly contact the functional layer, thereby cutting off the migration and damage path of the corrosion products, and significantly improving the long-term stability of the cell under aging conditions such as humidity and heat.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic device technology, and in particular to an organic solar cell with a lateral electrode and its preparation method. Background Technology

[0002] During the performance testing and module packaging of organic solar cells after cell fabrication, busbars are required to electrically connect to the electrodes inside the organic solar cells to collect current. Currently, the conventional method of connecting busbars is to directly attach them to the surface of the sub-cells (i.e., organic sub-cells) of the organic solar cell. For example, the busbar can be directly attached to each sub-cell of the organic solar cell, or to the surface of the two terminal electrodes of a series of sub-electrodes. However, this method of attaching busbars has the following problems: First, because the busbar directly covers the surface of the sub-cell, the sub-cell in the covered area cannot effectively absorb photons to generate photogenerated carriers, resulting in a reduction in the actual effective photosensitive area of ​​the cell and a loss of effective active area; secondly, because the busbar is directly attached to the sub-cell, one of the sub-cells will become an electrode and lose its power generation function, reducing the cell's output voltage (Voc) and photoelectric conversion efficiency (PCE). Secondly, organic solar cells require lamination during use. To eliminate air bubbles and ensure tight bonding between the layers, the lamination process typically applies a pressure of 50 kPa. However, organic solar cell sub-cells include an organic functional layer between the top and bottom electrodes, typically 100-300 nm thick, which is fragile and easily broken. Currently used busbars are made of hard metal alloys. During lamination, the hard busbar can pierce the fragile organic functional layer, causing direct contact between the top and bottom electrodes and creating a short circuit inside the sub-cell. This not only significantly reduces the cell's Voc (Volume of Charge) but can even lead to complete cell failure in severe cases. Thirdly, traditional metal-based busbars are prone to electrochemical corrosion and oxidation in high-temperature and high-humidity reliability testing environments, generating insulating corrosion products. These corrosion products migrate to the interface between the charge transport layer and the organic active layer of the sub-cell, catalyzing or directly causing the decomposition and performance degradation of these functional materials. This greatly accelerates the overall cell efficiency decay and reduces the long-term operational stability of the organic solar cell.

[0003] Therefore, developing an organic solar cell structure that can eliminate active area loss, eliminate the risk of lamination short circuits, and improve the long-term stability of organic solar cells is crucial for promoting the practical application of organic solar cells. Summary of the Invention

[0004] The purpose of this invention is to provide an organic solar cell with a lateral lead-out electrode that can eliminate active area loss, eliminate the risk of lamination short circuit, and improve the long-term stability of organic solar cells, as well as a method for its preparation.

[0005] The present invention provides an organic solar cell with a lateral electrode, comprising a transparent substrate and a first electrode lead-out region, a sub-cell region and a second electrode lead-out region disposed on the transparent substrate, wherein the sub-cell region is located between the first electrode lead-out region and the second electrode lead-out region, and the first electrode lead-out region, the sub-cell region and the second electrode lead-out region are separated by a trench. The sub-cell region is composed of two or more sub-cells connected in series side by side; the sub-cell includes a bottom electrode layer, a functional layer and a top electrode layer stacked sequentially on a transparent substrate; The first electrode lead-out area and the second electrode lead-out area independently include lead-out electrode layers and busbars attached to the lead-out electrodes; The lead-out electrode layer is disposed on a transparent substrate and is electrically connected to the bottom electrode layer of the sub-battery region.

[0006] Preferably, the functional layer in each sub-cell covers the top and one side of the bottom electrode layer, so that the bottom electrode layers of two adjacent sub-cells are isolated by the functional layer; the top electrode layer covers the top and one side of the functional layer, so that the top electrode layer is in contact with the bottom electrode layer of the adjacent sub-cell, and the top electrode layer is separated from the adjacent sub-cell by an isolation trench.

[0007] Preferably, the functional layer includes a first charge transport layer, a photoactive layer, and a second charge transport layer stacked sequentially.

[0008] Preferably, the first charge transport layer is selected from one or more of fullerenes and their derivatives, perylene imide derivatives, N-type conjugated polymers, N-type non-conjugated polymers, and inorganic N-type metal oxides; The second charge transport layer is selected from one or more of triphenylamine derivatives, carbazole materials, conductive polymer composites, polyphosphate carbazole polymers, and transition metal oxides.

[0009] Preferably, the photoactive layer comprises a donor material and an acceptor material, wherein the donor material is selected from one or more of PM6, D18, PTQ10 and PCE10; and the acceptor material is selected from one or more of Y6, N3, Y6-BO, BTP-eC9 and L8-BO.

[0010] Preferably, the width of the trench is 200~400μm; the width of the isolation trench is 30~45μm.

[0011] This invention also provides a method for fabricating an organic solar cell with a lateral lead-out electrode as described in the above technical solution, comprising the following steps: Two or more sub-cells connected in parallel in the middle region of a transparent substrate with a bottom electrode layer on its surface are prepared to obtain a sub-cell region. A portion of the bottom electrode layer is reserved on the transparent substrate on both sides of the sub-cell as a conductive connection region. The portion of the bottom electrode layer on the transparent substrate on both sides of the conductive connection region is thinned by laser etching to obtain the transition connection region. A top electrode layer material is deposited on the transition connection region to obtain the lead-out electrode layer; By attaching busbars to the lead-out electrode layer, an organic solar cell with lateral lead-out electrodes is obtained.

[0012] Preferably, the method for preparing the sub-cell region includes: A P1 line is scribing is performed on a transparent substrate with a bottom electrode layer on its surface, and the bottom electrode layer is cut to form a P1 groove, resulting in a bottom electrode layer isolated by the P1 groove; the number of the P1 groove is one or more. A functional layer material is deposited on the surface of the P1 groove and the bottom electrode layer to obtain a functional layer. A P2 line is scribing is performed on the surface of the functional layer to cut the functional layer and form a P2 groove, resulting in a functional layer isolated by the P2 groove; the P2 line is scribing along the same side of each P1 groove without damaging the sidewall of the P1 groove that is protected by the functional layer. A top electrode material is deposited on the surface of the P2 groove and the functional layer to obtain a top electrode layer; The top electrode layer is scribed with P3 lines to cut off the top electrode layer and the functional layer to form an isolation trench, resulting in a top electrode layer with isolation trenches; the P3 lines are scribed along the same side of each P2 groove without damaging the sidewall of the P1 groove that is protected by the functional layer.

[0013] Preferably, the width of the P1 groove is 20~40μm; the width of the P2 groove is 50~70μm; the width of the isolation trench is 30~45μm; and the width of the trench is 200~400μm.

[0014] Preferably, P1 scribing, P2 scribing, laser etching thinning, and P3 scribing are all laser scanning; The parameters for the P1 line drawing include: the laser is a picosecond laser; the laser wavelength is 1064nm; the power is 10~50W; the pulse frequency is 1~500kHz; and the scanning speed is 300~500mm / s. The parameters for the P2 line drawing include: the laser is a picosecond laser; the laser wavelength is 532nm; the power is 3~10W; the pulse frequency is 1~500kHz; and the scanning speed is 300~500mm / s. The laser etching thinning is a laser scanning process, and the parameters of the laser scanning include: the laser is a picosecond laser; the laser wavelength is 1064nm; the power is 10~50W; the pulse frequency is 1~500kHz; and the scanning speed is 300~500mm / s. The parameters for the P3 line drawing include: the laser is a picosecond laser or a nanosecond laser; the laser wavelength is 532nm; the power is 3~10W; the pulse frequency is 1~500kHz; and the scanning speed is 300~500mm / s.

[0015] This invention provides an organic solar cell with a lateral lead-out electrode, comprising a transparent substrate and a first electrode lead-out region, a sub-cell region, and a second electrode lead-out region disposed on the transparent substrate. The sub-cell region is located between the first electrode lead-out region and the second electrode lead-out region, and the first electrode lead-out region, the sub-cell region, and the second electrode lead-out region are separated by a trench. The sub-cell region is composed of two or more sub-cells arranged side by side in series. The sub-cell includes a bottom electrode layer, a functional layer, and a top electrode layer sequentially stacked on the transparent substrate. The first electrode lead-out region and the second electrode lead-out region independently include lead-out electrode layers and busbars attached to the lead-out electrodes. The lead-out electrode layers are disposed on the transparent substrate and are electrically connected to the bottom electrode layer of the sub-cell region. The organic solar cell with lateral lead-out electrodes provided by this invention includes a first electrode lead-out region, a sub-cell region, and a second electrode lead-out region. Each of the first and second electrode lead-out regions independently includes an lead-out electrode layer and a busbar attached to the lead-out electrode. The lead-out electrode layer is disposed on a transparent substrate and is conductively connected to the bottom electrode layer of the sub-cell region. By setting the first and second electrode lead-out regions and attaching the busbar to the lead-out electrode layer, since the busbar no longer covers the surface of the sub-cell, 100% of the effective area of ​​the sub-cell region can be used for light absorption and photoelectric conversion, maximizing the utilization of the active area of ​​the cell and improving the current output and energy conversion efficiency of the organic solar cell. Attaching the busbar to the lead-out electrode layer, by setting… The lead-out electrode layer on the transparent substrate is electrically connected to the bottom electrode layer of the sub-cell. The busbar and the sub-cell are not in direct contact and are physically isolated. This ensures that even when the organic solar cell is laminated, the pressure is uniformly transmitted through the substrate, and the rigid busbar cannot contact or puncture the functional layer. This fundamentally avoids internal short circuits caused by mechanical stress, ensuring the yield and reliability of the organic solar cell. Furthermore, since there is no direct contact between the busbar and the sub-cell, even if the busbar oxidizes or corrodes in harsh environments, the products are confined to the electrode lead-out area of ​​the glass substrate and will not come into direct contact with the functional layer. This cuts off the migration and damage path of corrosion products, significantly improving the long-term stability of the cell under aging conditions such as damp heat. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the organic solar cell with lateral electrode leads of the present invention; Figure 2 This is a schematic diagram of the method for preparing the organic solar cell with the lateral lead-out electrode of the present invention; Figure 3This is a schematic diagram of an organic solar cell with a lateral lead-out electrode prepared according to Example 1 of the present invention; Figure 4 An external view of the organic solar cell with a lateral lead-out electrode prepared in Example 1 of the present invention; Figure 5 This is a schematic diagram of the preparation method of the organic solar cell prepared in Comparative Example 1 of the present invention; Figure 6 This is a schematic diagram of the organic solar cell prepared in Comparative Example 1 of the present invention; Figure 7 This is an external image of the organic solar cell prepared in Comparative Example 1 of the present invention. Figure 8 This is a comparison chart of the stability data of the organic solar cells with lateral lead-out electrodes prepared in Examples 1-5 of the present invention and the organic solar cell prepared in Comparative Example 1. Detailed Implementation

[0017] The present invention provides an organic solar cell with a lateral electrode, comprising a transparent substrate and a first electrode lead-out region, a sub-cell region and a second electrode lead-out region disposed on the transparent substrate, wherein the sub-cell region is located between the first electrode lead-out region and the second electrode lead-out region, and the first electrode lead-out region, the sub-cell region and the second electrode lead-out region are separated by a trench. The sub-cell region is composed of two or more sub-cells connected in series side by side; the sub-cell includes a bottom electrode layer, a functional layer and a top electrode layer stacked sequentially on a transparent substrate; The first electrode lead-out area and the second electrode lead-out area independently include lead-out electrode layers and busbars attached to the lead-out electrodes; The lead-out electrode layer is disposed on a transparent substrate and is electrically connected to the bottom electrode layer of the sub-battery region.

[0018] The organic solar cell with lateral lead-out electrodes provided by the present invention includes a transparent substrate.

[0019] In this invention, the transparent substrate is preferably a glass substrate. This invention does not impose any particular limitation on the thickness of the glass substrate; any glass substrate conventionally used for preparing organic solar cells can be used.

[0020] The organic solar cell with lateral lead-out electrodes provided by the present invention includes a first electrode lead-out region, a sub-cell region, and a second electrode lead-out region disposed on the transparent substrate, wherein the sub-cell region is located between the first electrode lead-out region and the second electrode lead-out region.

[0021] In this invention, the sub-battery area is composed of two or more sub-batteries connected in series side by side. This invention does not impose a special limitation on the number of sub-batteries; it can be adjusted as needed.

[0022] In this invention, the sub-battery includes a bottom electrode layer, a functional layer, and a top electrode layer sequentially stacked on the transparent substrate.

[0023] In this invention, the bottom electrode layer is preferably made of transparent conductive oxide (ITO). The thickness of the bottom electrode layer is preferably 50-200 nm. As an embodiment of this invention, the thickness of the bottom electrode layer can be 50 nm, 60 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, or 200 nm.

[0024] In this invention, the functional layer preferably includes a first charge transport layer, a photoactive layer, and a second charge transport layer stacked sequentially. This invention utilizes the functional layer as the core light-emitting layer of an organic solar cell, the photoactive layer as the energy conversion core, and the first and second charge transport layers on either side acting as two dedicated "one-way channels" to ensure that the converted charges flow efficiently and orderly to the corresponding electrodes, thereby completing the entire photoelectric or electro-optical conversion process.

[0025] In this invention, the first charge transport layer is preferably one or more of fullerene and its derivatives, perylene imide derivatives, N-type conjugated polymers, N-type non-conjugated polymers, and inorganic N-type metal oxides. In this invention, the fullerene and its derivatives are preferably methyl [6,6]-phenyl-C61-butyrate (PC61BM); the perylene imide derivative is preferably N,N'-di(2-ethylhexyl)-3,4,9,10-perylenetetracarboxylic diimide (PDI-EH); the N-type conjugated polymer is preferably poly[(N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-tetracarboxylic diimide-2,6-diyl)-alt-5,5'-(2,2'-bithiophene)] (P(NDI2OD-T2)); the N-type non-conjugated polymer is preferably polyethyleneimine (PEI); and the inorganic N-type metal oxide is preferably one or more of zinc oxide (ZnO), titanium dioxide (TiO2), tin oxide (SnO2), and indium gallium zinc oxide (IGZO).

[0026] In this invention, the thickness of the first charge transport layer is preferably 8-30 nm. As an embodiment of this invention, the thickness of the first charge transport layer can be 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, or 30 nm.

[0027] In this invention, the photoactive layer preferably comprises a donor material and an acceptor material. In this invention, the mass ratio of the donor material to the acceptor material is preferably 1:1.0 to 1.6.

[0028] In this invention, the donor material is preferably one or more of PM6, D18, PTQ10 and PCE10, more preferably PM6; the acceptor material is preferably one or more of Y6, N3, Y6-BO, BTP-eC9 and L8-BO, more preferably Y6 and / or L8-BO.

[0029] In embodiments of the present invention, the photoactive layer can be made of PM6, Y6 and L8-BO, and the mass ratio of PM6, Y6 and L8-BO can be 1:1.12:0.28, or simply PM6:Y6:L8-BO (mass ratio 1:1.12:0.28, i.e. the mass ratio of donor material to acceptor material is 1:1.4).

[0030] In this invention, the thickness of the photoactive layer is preferably 50-200 nm. As an embodiment of this invention, the thickness of the photoactive layer can be 50 nm, 60 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, or 200 nm.

[0031] In this invention, the second charge transport layer is preferably one or more of a triphenylamine derivative, a carbazole-based material, a conductive polymer composite material, a polyphosphoric carbazole-based polymer material, and a transition metal oxide. In this invention, the conductive polymer composite material is preferably PEDOT:PSS; the polyphosphoric carbazole-based polymer material is preferably Poly-2PACz; and the transition metal oxide is preferably MoO. x VO x and NiO x One or more of the following, wherein, preferably, the MoO x The value of x in the VO ranges from 2 to 3. x The value of x in the text ranges from 1.5 to 2.5. The NiO... x The value of x in the equation ranges from 1 to 1.5.

[0032] In this invention, the thickness of the second charge transport layer is preferably 8-20 nm. As an embodiment of this invention, the thickness of the second charge transport layer can be 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, or 20 nm.

[0033] In this invention, the material of the top electrode layer is preferably a composite material formed from one or more of a metal and a transparent conductive oxide. In this invention, the metal is preferably Au, Ag, Al, or Cu; the transparent conductive oxide is preferably ITO. In this invention, the thickness of the top electrode layer is preferably 10-100 nm. As an embodiment of this invention, the thickness of the top electrode layer can be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, or 100 nm.

[0034] In this invention, the functional layer in each sub-cell covers the top and one side of the bottom electrode layer, isolating the bottom electrode layers of adjacent sub-cells through the functional layer; the top electrode layer covers the top and one side of the functional layer, contacting the bottom electrode layer of the adjacent sub-cell, and is separated from the adjacent sub-cell by an isolation trench. In this invention, the functional layer in each sub-cell covers the top and right side of the bottom electrode layer, isolating the bottom electrode layers of adjacent sub-cells through the functional layer; the top electrode layer covers the top and right side of the functional layer, contacting the bottom electrode layer of the adjacent sub-cell, and is separated from the adjacent sub-cell by an isolation trench. Through the above connection method, this invention enables sub-cells to be connected in series to form a sub-cell region.

[0035] In this invention, the width of the isolation trench is preferably 30-45 μm. As an embodiment of this invention, the width of the isolation trench can be 30 μm, 31 μm, 32 μm, 33 μm, 34 μm, 35 μm, 36 μm, 37 μm, 38 μm, 39 μm, 40 μm, 41 μm, 42 μm, 43 μm, 44 μm, or 45 μm. In this invention, the depth of the isolation trench is preferably 76-350 nm. As an embodiment of this invention, the depth of the isolation trench can be 76 nm, 80 nm, 100 nm, 120 nm, 150 nm, 200 nm, 250 nm, 300 nm, or 350 nm. This invention prevents short circuits between adjacent sub-cells by providing isolation trenches.

[0036] In this invention, the first electrode lead-out area includes a lead-out electrode layer and a busbar attached to the lead-out electrode.

[0037] In this invention, the lead-out electrode layer is disposed on a transparent substrate and is electrically connected to the bottom electrode layer of the sub-cell region. This invention, by providing the lead-out electrode layer, facilitates the attachment of busbars, thus preventing the busbars from covering the sub-cells.

[0038] In this invention, the lead-out electrode layer is preferably a top electrode layer, or a composite electrode layer formed by a bottom electrode layer and a top electrode layer.

[0039] In this invention, when the lead-out electrode layer is a composite electrode layer formed by a bottom electrode layer and a top electrode layer, the bottom electrode layer is preferably composed of a conductive connection region and a transition connection region. The materials of the conductive connection region and the transition connection region are the same as those of the bottom electrode layer of the sub-battery described in the above technical solution, and will not be repeated here.

[0040] In this invention, the conductive connection region is preferably connected to the bottom electrode layer of the sub-cell in the adjacent sub-cell region, and its thickness is preferably the same as the thickness of the bottom electrode layer of the sub-cell. The thickness of the transition connection region is preferably less than or equal to that of the conductive connection region. When the thickness of the transition connection region is less than that of the conductive connection region, the thickness of the transition connection region is preferably 16-33% of the thickness of the conductive connection region, more preferably 20-25%. This invention forms a stepped structure by setting the conductive connection region and the transition connection region, which is beneficial for the continuous deposition of the top electrode in a "stepped coverage" structure. This structure not only completely isolates the busbar from the fragile battery active layer in space, but also solves the process problem that the top electrode is prone to breakage or high resistance when crossing the trench during lateral lead-out.

[0041] In this invention, the thickness of the conductive connection region is preferably 50-200 nm. As an embodiment of this invention, the thickness of the conductive connection region can be 50 nm, 60 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, or 200 nm.

[0042] In this invention, the thickness of the transition connection region is preferably 30-170 nm. As an embodiment of this invention, the thickness of the transition connection region can be 30 nm, 50 nm, 100 nm, 110 nm, 120 nm, 125 nm, 130 nm, 140 nm, or 150 nm. The thickness of the transition connection region is the total thickness of the bottom electrode layer minus the thickness thinned by laser etching; the thickness thinned by laser etching is 16-33% of the total thickness of the bottom electrode layer.

[0043] In this invention, the material of the top electrode layer is the same as that of the top electrode layer described in the above technical solution, and will not be repeated here.

[0044] In this invention, the thickness of the top electrode layer on the conductive connection region is preferably 50~150nm, more preferably 80~120nm; the thickness of the top electrode layer on the transition connection region is preferably 50~150nm, more preferably 80~120nm.

[0045] In this invention, the first electrode lead-out region and the sub-cell region are separated by a trench. The width of the trench is preferably 200-400 μm. As an embodiment of this invention, the trench width can be 200 μm, 220 μm, 240 μm, 250 μm, 260 μm, 280 μm, 300 μm, 320 μm, 340 μm, 350 μm, 360 μm, 380 μm, or 400 μm. The trench depth is preferably the height between the top electrode layer and the bottom electrode layer of the sub-cell, preferably 76-350 nm. As an embodiment of this invention, the trench depth can be 76 nm, 80 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, or 350 nm. In this invention, the trench depth is within the above range, and the sub-cell region and the bottom electrode layer of the lead-out electrode layer are the same conductive layer, making them electrically connected.

[0046] In this invention, the first electrode lead-out area includes a busbar attached to the lead-out electrode. This invention does not have a particular limitation on the material of the busbar; any conventional busbar can be used. In this invention, the busbar is preferably a metal busbar, and the material of the metal busbar is preferably one or more of silver, copper, gold, and aluminum, more preferably copper or silver, and even more preferably silver-plated copper or silver-clad copper alloy; optionally, the surface of the metal busbar may also be provided with a tin plating layer, a nickel plating layer, or a silver plating layer to improve solderability and oxidation resistance.

[0047] In this invention, the second electrode lead-out region includes a lead-out electrode layer and a busbar attached to the lead-out electrode.

[0048] In this invention, the lead-out electrode layer is disposed on a transparent substrate and is electrically connected to the bottom electrode layer of the sub-battery region.

[0049] In this invention, the lead-out electrode layer is preferably a composite electrode layer formed by a bottom electrode layer and a top electrode layer. In this invention, the bottom electrode layer of the composite electrode layer preferably consists of a conductive connection region and a transition connection region. The materials of the conductive connection region and the transition connection region are the same as those of the bottom electrode layer of the sub-battery described in the above technical solution, and will not be repeated here.

[0050] In this invention, the conductive connection region is preferably connected to the bottom electrode layer of the sub-battery in the adjacent sub-battery region, and its thickness is preferably the same as the thickness of the bottom electrode layer of the sub-battery; the thickness of the transition connection region is preferably less than or equal to that of the conductive connection region; when the thickness of the transition connection region is less than the thickness of the conductive connection region, the thickness of the transition connection region is preferably 16-33% of the thickness of the conductive connection region, more preferably 20-25%.

[0051] In this invention, the thickness of the conductive connection region is preferably 50-200 nm. As an embodiment of this invention, the thickness of the conductive connection region can be 50 nm, 60 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, or 200 nm. In this invention, the thickness of the transition connection region is preferably 30-170 nm. As an embodiment of this invention, the thickness of the transition connection region can be 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, or 170 nm.

[0052] In this invention, the material of the top electrode layer is the same as that of the top electrode layer described in the above technical solution, and will not be repeated here.

[0053] In this invention, the thickness of the top electrode layer on the conductive connection region is preferably 50~150nm, more preferably 80~120nm; the thickness of the top electrode layer on the transition connection region is preferably 50~150nm, more preferably 80~120nm.

[0054] In this invention, the second electrode lead-out region and the sub-cell region are separated by a trench. The width of the trench is preferably 200-400 μm. As an embodiment of this invention, the width of the trench can be 200 μm, 220 μm, 240 μm, 250 μm, 260 μm, 280 μm, 300 μm, 320 μm, 340 μm, 350 μm, 360 μm, 380 μm, or 400 μm. The depth of the trench is preferably the height between the top and bottom electrode layers of the sub-cell.

[0055] In this invention, the second electrode lead-out area includes a lead-out electrode layer and a busbar attached to the lead-out electrode. This invention does not have a particular limitation on the material of the busbar; any conventional busbar can be used. In this invention, the busbar is preferably a metal busbar, and the material of the metal busbar is preferably one or more of silver, copper, gold, and aluminum, more preferably silver-plated copper or silver-clad copper alloy; optionally, the surface of the metal busbar may also be provided with a tin plating layer, a nickel plating layer, or a silver plating layer to improve solderability and oxidation resistance.

[0056] A preferred schematic diagram of the organic solar cell with lateral lead-out electrodes provided by the present invention is shown below. Figure 1 As shown. In Figure 1 In the diagram, 1 represents the first electrode lead-out region, 2 represents the sub-cell region, and 3 represents the second electrode lead-out region.

[0057] This invention also provides a method for fabricating an organic solar cell with a lateral lead-out electrode as described in the above technical solution, comprising the following steps: Two or more sub-cells connected in parallel in the middle region of a transparent substrate with a bottom electrode layer on its surface are prepared to obtain a sub-cell region. A portion of the bottom electrode layer is reserved on the transparent substrate on both sides of the sub-cell as a conductive connection region. The portion of the bottom electrode layer on the transparent substrate on both sides of the conductive connection region is thinned by laser etching to obtain the transition connection region. A top electrode layer material is deposited on the transition connection region to obtain the lead-out electrode layer; By attaching busbars to the lead-out electrode layer, an organic solar cell with lateral lead-out electrodes is obtained.

[0058] The present invention prepares two or more sub-cells connected in parallel in the middle region of a transparent substrate with a bottom electrode layer on the surface to obtain a sub-cell region.

[0059] In this invention, the method for preparing the sub-cell region preferably includes: A P1 line is scribing is performed on a transparent substrate with a bottom electrode layer on its surface, and the bottom electrode layer is cut to form a P1 groove, resulting in a bottom electrode layer isolated by the P1 groove; the number of the P1 groove is one or more. A functional layer material is deposited on the surface of the P1 groove and the bottom electrode layer to obtain a functional layer. A P2 line is scribing is performed on the surface of the functional layer to cut the functional layer and form a P2 groove, resulting in a functional layer isolated by the P2 groove; the P2 line is scribing along the same side of each P1 groove without damaging the sidewall of the P1 groove that is protected by the functional layer. A top electrode material is deposited on the surface of the P2 groove and the functional layer to obtain a top electrode layer; The top electrode layer is scribed with P3 lines to cut off the top electrode layer and the functional layer to form an isolation trench, resulting in a top electrode layer with isolation trenches; the P3 lines are scribed along the same side of each P2 groove without damaging the sidewall of the P1 groove that is protected by the functional layer.

[0060] The present invention preferably scribing a P1 line on a transparent substrate with a bottom electrode layer on its surface, cutting the bottom electrode layer to form a P1 line groove, thereby obtaining a bottom electrode layer isolated by the P1 line groove.

[0061] In this invention, the material and thickness of the bottom electrode layer are the same as those of the bottom electrode layer of the organic solar cell with lateral lead-out electrodes described in the above technical solution, and will not be repeated here.

[0062] Preferably, the transparent substrate P1 with the bottom electrode layer on its surface is cleaned and dried before being scribing. The cleaning and drying method is not particularly limited; any method that thoroughly removes impurities from the transparent substrate with the bottom electrode layer is sufficient.

[0063] In this invention, the P1 scribing is preferably laser scanning, and the laser scanning parameters preferably include: the laser is a picosecond laser; the laser wavelength is preferably 1064 nm; the power is preferably 10~50 W, more preferably 30 W; the pulse frequency is preferably 1~1000 kHz, more preferably 220 kHz; and the scanning speed is preferably 300~500 mm / s, more preferably 500 mm / s. This invention forms P1 grooves by scribing the bottom electrode layer, isolating the bottom electrode layer into multiple parallel stripes, defining the sub-cell boundaries, and isolating the bottom electrode layer into multiple independent units.

[0064] In this invention, the width of the P1 groove is preferably 30~40μm, more preferably 35μm; the depth of the P1 groove is preferably 50~200nm, more preferably 170nm.

[0065] In this invention, the number of P1 slots is preferably one or more. In an embodiment of this invention, the number of P1 slots can be eight.

[0066] After obtaining the bottom electrode layer isolated by the P1 groove, the present invention preferably deposits a functional layer material on the surface of the P1 groove and the bottom electrode layer to obtain a functional layer.

[0067] In this invention, the functional layer material is the same as the functional layer material of the organic solar cell with lateral lead-out electrodes described in the above technical solution, and will not be described again here.

[0068] In this invention, the preferred method for depositing the functional layer material is slot coating. This invention does not specifically limit the slot coating method; any conventional slot coating method that can form a deposited functional layer of the required thickness is acceptable.

[0069] In this invention, the functional layer preferably comprises a first charge transport layer, a photoactive layer, and a second charge transport layer stacked sequentially. In this invention, the thickness of the first charge transport layer is preferably 8-30 nm; the thickness of the photoactive layer is preferably 50-200 nm; and the thickness of the second charge transport layer is preferably 8-20 nm.

[0070] After obtaining the functional layer, the present invention preferably scribing a P2 line on the surface of the functional layer, cutting the functional layer to form a P2 groove, thereby obtaining a functional layer isolated by the P2 groove.

[0071] In this invention, the P2 scribing is performed along the same side of each P1 slot without damaging the sidewalls of the P1 slots protected by the functional layer. Preferably, the P2 scribing is performed along the right side of each P1 slot. This method of scribing along the same side of the P1 slots without damaging the sidewalls of the P1 slots protected by the functional layer allows the subsequent deposition of the top electrode layer material to cover the top and one side of the functional layer, enabling the top electrode layer to contact the bottom electrode layer of the adjacent sub-cell, thus achieving series connection of the sub-electrodes. This invention uses the area inside the two outermost P2 slots as the effective area of ​​the battery.

[0072] In this invention, the P2 line drawing is preferably laser scanning, and the laser scanning parameters preferably include: the laser is a picosecond laser; the laser wavelength is preferably 532nm; the power is preferably 3~10W, more preferably 6W; the pulse frequency is preferably 1~500kHz, more preferably 40kHz; and the scanning speed is preferably 300~500mm / s, more preferably 300mm / s.

[0073] In this invention, the width of the P2 groove is preferably 50-70 μm, more preferably 60 μm; the depth of the P2 groove is preferably 66-250 nm, more preferably 150-200 nm. By controlling the depth of the P2 groove within the above range, this invention exposes the bottom electrode, allowing the subsequently deposited top electrode to contact the bottom electrode, thus achieving series connection of sub-cells.

[0074] After obtaining the functional layer for P2 slot isolation, the present invention preferably deposits a top electrode material on the surface of the P2 slot and the functional layer to obtain a top electrode layer.

[0075] This invention does not specifically limit the method for depositing the top electrode material; any conventional electrode deposition method can be used to form a top electrode layer of the required thickness. In this invention, the material and thickness of the top electrode layer are the same as those of the top electrode layer in the organic solar cell with lateral lead-out electrodes described in the above-mentioned technical solution.

[0076] After obtaining the top electrode layer, the present invention preferably scribing the top electrode layer with P3 lines, cutting off the top electrode layer and the functional layer to form an isolation trench, thereby obtaining a top electrode layer with an isolation trench.

[0077] In this invention, the P3 scribe line is preferably scribed along the same side of each P2 slot without damaging the sidewall of the P1 slot protected by the functional layer. Alternatively, the P3 scribe line is preferably scribed along the right side of each P2 slot. By scriberizing along the same side of each P2 slot without damaging the sidewall of the P1 slot protected by the functional layer, this invention can separate the top electrode layer and the functional layer, forming a P3 trench, isolating the top electrode layer, and enabling the series connection of adjacent battery cells.

[0078] In this invention, the P3 line drawing is preferably laser scanning, and the laser scanning parameters preferably include: the laser is a picosecond laser; the laser wavelength is preferably 532nm; the power is preferably 6W; the pulse frequency is preferably 30kHz; and the scanning line speed is preferably 300mm / s.

[0079] In this invention, the width of the P3 groove is preferably 30-45 μm; the depth of the P3 groove is preferably 76-350 nm. As an embodiment of this invention, the depth of the P3 groove can be 76 nm, 80 nm, 90 nm, 100 nm, 150 nm, 200 nm, 250 nm, or 300 nm. By controlling the depth of the P3 groove within the above range, this invention can isolate the top electrode layers of adjacent sub-cells, enabling the series connection of adjacent battery cells.

[0080] After obtaining the sub-cell region, the present invention reserves a portion of the bottom electrode layer on the transparent substrate on both sides of the sub-cell as a conductive connection region. The portion of the bottom electrode layer on the transparent substrate on both sides of the conductive connection region is thinned by laser etching to obtain the transition connection region.

[0081] In this invention, the width of the conductive connection region is preferably 200-400 μm, more preferably 300-400 μm. This invention reserves the conductive connection region to facilitate the subsequent connection between the lead-out electrode layer and the sub-cell region.

[0082] In this invention, when functional layers exist on the transparent substrates on both sides of the outermost sub-cell during the fabrication process, the functional layers are preferably removed by performing multiple parallel P2 scribings in the form of multiple lines. In this invention, the parameters of the P2 scribings are the same as those of the P2 scribings in the sub-cell fabrication method described in the above technical solution.

[0083] In this invention, the laser etching thinning is preferably performed using P2.5 scribing. This invention removes portions of the bottom electrode layer on the left and right sides outside the effective area of ​​the battery by scribing along P2.5 lines, while retaining the remaining bottom electrode layer. In this invention, when the deposition of the top electrode layers in the sub-cell region, the first electrode lead-out region, and the second electrode lead-out region is performed simultaneously, this invention preferably removes all functional layers and a portion of the bottom electrode layer on the left and right sides outside the effective area of ​​the battery by scribing along P2.5 lines during laser etching thinning.

[0084] In this invention, the thickness of the laser etching thinning is preferably 25-50 nm, and the thickness of the remaining bottom electrode layer is preferably 30-170 nm, more preferably 100-125 nm. That is, the thickness of the remaining bottom electrode layer is the total thickness of the bottom electrode layer minus the thickness of the laser etching thinning; the thickness of the laser etching thinning is 16-33% of the total thickness of the bottom electrode layer.

[0085] In this invention, the P2.5 scribing is preferably laser scanning, and the laser scanning parameters preferably include: a picosecond laser; a laser wavelength preferably 1064 nm; a power preferably 10~50 W, more preferably 25 W; a pulse frequency preferably 1~1000 kHz, more preferably 800 kHz; and a scanning speed preferably 300~500 mm / s. This invention precisely adjusts the laser energy to remove only the left and right sides of the bottom electrode layer (approximately 25~50 nm thick, i.e., 16~33% of the total thickness of the bottom electrode layer) outside the effective area of ​​the battery, while retaining the remaining approximately 30~170 nm thick bottom electrode layer. This "semi-etching" process forms a gentle stepped structure at the edge of the functional layer, rather than a deep trench reaching the glass, preserving the integrity of the bottom electrode layer in the electrode lead-out connection area. In this invention, when a functional layer exists on the bottom electrode layer, the functional layer is removed by P2.5 scribing.

[0086] In this invention, the thickness of the transition connection region is preferably 16-33% of the thickness of the conductive connection region, more preferably 20-25%. The thickness of the conductive connection region is preferably 50-200 nm. As an embodiment of this invention, the thickness of the conductive connection region can be 50 nm, 60 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, or 200 nm.

[0087] In this invention, the thickness of the transition connection region is preferably 100-150 nm. As an embodiment of this invention, the thickness of the transition connection region can be 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, or 150 nm.

[0088] After obtaining the transition connection region, the present invention deposits a top electrode layer material on the transition connection region to obtain the lead-out electrode layer. Because the present invention utilizes the gentle steps formed by the conductive connection region and the transition connection region, the top electrode layer material can smoothly extend from the edge of the effective area of ​​the battery to the conductive connection region retained when the P2 double line is drawn, and smoothly cover the transition connection region, forming a continuous conductive channel without breakage or significant resistance increase, thus forming an ohmic contact and enabling the series connection of the front and rear sub-cells.

[0089] This invention does not specifically limit the method for depositing the top electrode layer material; any conventional electrode deposition method that can form a top electrode layer of the required thickness is acceptable. In this invention, the type and thickness of the top electrode layer material are the same as those of the organic solar cell with lateral lead-out electrodes described in the above-mentioned technical solutions.

[0090] In this invention, the deposition of the top electrode layer in the sub-cell region, the first electrode lead-out region, and the second electrode lead-out region is preferably performed simultaneously.

[0091] In this invention, P3 lines are preferably drawn in the sub-cell region after the deposition of the top electrode layer to form an isolation trench, and then P3 lines are drawn in the conductive connection region to form a trench.

[0092] Preferably, after marking line P3, the outer region of the lead-out electrode layer is marked with line P4 to remove the bottom electrode layer and top electrode layer in the outer region of the electrode layer, thereby obtaining the lead-out electrode layer.

[0093] In this invention, the P4 line is preferably drawn using laser scanning, and the laser scanning parameters preferably include: the laser is a picosecond laser; the laser wavelength is preferably 1064nm; the power is preferably 40W; and the pulse frequency is preferably 800kHz.

[0094] After obtaining the lead-out electrode layer, the present invention attaches a busbar to the lead-out electrode layer to obtain an organic solar cell with lateral lead-out electrodes.

[0095] In this invention, the busbar is preferably made of copper-clad aluminum composite material and has a chromium plating layer on its surface; the width of the busbar is preferably 5 mm.

[0096] The present invention does not have any particular limitation on the method of attaching the busbar, as long as the busbar can be tightly attached to the lead electrode layer.

[0097] Preferably, this invention involves attaching a busbar to the lead-out electrode layer, followed by lamination and encapsulation of the battery. A high-barrier encapsulation film is then applied to the entire device surface before lamination and performance testing. This invention does not specifically limit the lamination and encapsulation process; conventional organic solar cell lamination and encapsulation methods can be used. During battery performance testing, the metal busbar can be directly pressed onto the lead-out electrodes on the glass substrate. During lamination, the encapsulation material covers the entire battery and lead-out area. Since there is no direct contact between the busbar and the sub-cells, they are physically isolated. During lamination, pressure is uniformly transmitted through the substrate, preventing the rigid busbar from contacting and piercing the nanometer-thick electrode layer. This fundamentally avoids internal short circuits caused by mechanical stress, ensuring the battery's yield and reliability.

[0098] A schematic diagram of the method for fabricating an organic solar cell with a lateral lead-out electrode provided by the present invention is preferably shown below. Figure 2As shown. This invention avoids direct exposure of the glass substrate and the formation of deep trenches by retaining part of the bottom electrode layer. The stepped structure formed by this "shallow etching" has a gentle slope, which allows the subsequently deposited top electrode (such as ITO, Ag, Cu, etc.) to maintain good continuity and conductivity in this area, avoiding film breakage or excessive resistance caused by excessively high steps, and ensuring a high fill factor (FF) of the battery.

[0099] The technical solutions of this invention will be clearly and completely described below with reference to the embodiments thereof. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0100] Example 1 An organic solar cell with a side-extracted electrode, comprising the following steps: (1) Provide a glass substrate with a 150nm thick transparent conductive oxide ITO layer on its surface. After cleaning and drying, use a picosecond laser with a wavelength of 1064nm and set the laser parameters as follows: power 30W, pulse frequency 220kHz, scanning speed 500mm / s to scribing P1 lines to form P1 grooves with a width of 35μm and a depth of 150nm. Isolate the ITO layer into 64 parallel stripes to determine the boundary of the sub-cell and obtain the bottom electrode layer isolated by the P1 groove. (2) By means of slit coating, a first charge transport layer ZnO with a thickness of 30 nm, a photoactive layer (PM6:Y6:L8-BO, mass ratio 1:1.12:0.28) with a thickness of 100 nm and a second charge transport layer (MoO3) with a thickness of 20 nm are sequentially deposited on the surface of the P1 groove and the bottom electrode layer to obtain the functional layer; (3) Draw a P2 line along the right side of each P1 slot on the surface of the functional layer without damaging the sidewall of the P1 slot protected by the functional layer, cut the functional layer to expose the bottom electrode layer, and form a P2 slot with a width of 60μm and a depth of 150nm to obtain a functional layer isolated by the P2 slot. The two outermost P2 slots on the functional layer of P2 slot isolation are scribed multiple times in a compound line pattern, reserving an ITO layer with a width of 300μm as the subsequent conductive connection area; the P2 scriber uses a picosecond laser with a wavelength of 532nm, and the laser parameters are set as follows: power 6W, pulse frequency 40kHz, and scanning speed 300mm / s. (4) Perform P2.5 scribing on the outside of the conductive connection region, remove all functional layers (about 150nm) and the 25nm thick ITO layer (i.e. 16.67% of the total thickness of the ITO layer), and obtain the transition connection region. The line drawn on P2.5 indicates laser scanning. The parameters for laser scanning are: picosecond laser; laser wavelength: 1064nm; power: 25W; pulse frequency: 800kHz; scanning speed: 300mm / s. (5) Deposit top electrode material ITO on the surface of the P2 slot and the functional layer of the P2 slot isolation functional layer to obtain a top electrode layer (ITO layer) with a thickness of 100nm. At the same time, deposit an ITO layer on the transition connection region to form an lead-out electrode layer. Then, scribing P3 along the right side of each P2 slot cuts off the top electrode layer and the functional layer to form an isolation trench without damaging the sidewall of the P1 slot protected by the functional layer, forming a P3 slot (i.e., an isolation trench) with a width of 45μm and a depth of 250nm. Then, scribing P3 in the conductive connection region cuts off the top electrode layer and the functional layer to form a trench, resulting in a top electrode layer with an isolation trench. The P3 line is drawn using laser scanning, and the parameters of the laser scanning are as follows: the laser is a picosecond laser; the laser wavelength is 532nm; the power is 6W; the pulse frequency is 30kHz; and the scanning line speed is 300mm / s. (6) Perform P4 scribing on the outer region of the lead-out electrode layer to remove the bottom electrode layer and top electrode layer in the outer region of the lead-out electrode layer. The P4 scribing is a laser scan. The parameters of the laser scan are: the laser is a picosecond laser; the laser wavelength is 1064nm; the power is 40W; and the pulse frequency is 800kHz. (7) A metal busbar (a copper-clad aluminum composite material plated with chromium) is attached to the lead-out electrode layer to obtain an organic solar cell with a lateral lead-out electrode.

[0101] A schematic diagram of the organic solar cell with a lateral lead-out electrode prepared in this embodiment is shown below. Figure 3 As shown; appearance drawing as shown Figure 4 As shown. In Figure 3 In the diagram, 1 represents the first electrode lead-out region, 2 represents the sub-cell region, and 3 represents the second electrode lead-out region. Figure 4 In the image, the left image shows the front of an organic solar cell with lateral electrodes, and the right image shows the back of an organic solar cell with lateral electrodes.

[0102] Example 2 An organic solar cell with a side-extracted electrode, comprising the following steps: (1) Provide a glass substrate with a 150nm thick transparent conductive oxide ITO layer on its surface. After cleaning and drying, use a picosecond laser with a wavelength of 1064nm and set the laser parameters as follows: power 30W, pulse frequency 220kHz, scanning speed 500mm / s to scribing P1 lines to form P1 grooves with a width of 35μm and a depth of 150nm. Isolate the ITO layer into 64 parallel stripes to determine the boundary of the sub-cell and obtain the bottom electrode layer isolated by the P1 groove. (2) By means of slit coating, a first charge transport layer (ZnO) with a thickness of 30 nm, a photoactive layer (PM6:Y6:L8-BO, mass ratio 1:1.12:0.28) with a thickness of 100 nm and a second charge transport layer (MoO3) with a thickness of 20 nm are sequentially deposited on the surface of the P1 groove and the bottom electrode layer to obtain the functional layer; (3) Draw a P2 line along the right side of each P1 slot on the surface of the functional layer without damaging the sidewall of the P1 slot protected by the functional layer, cut the functional layer to expose the bottom electrode layer, and form a P2 slot with a width of 60μm and a depth of 150nm to obtain a functional layer isolated by the P2 slot. The two outermost P2 slots on the functional layer of P2 slot isolation are scribed multiple times in a compound line pattern, reserving an ITO layer with a width of 300μm as the subsequent conductive connection area; the P2 scriber uses a picosecond laser with a wavelength of 532nm, and the laser parameters are set as follows: power 6W, pulse frequency 40kHz, and scanning speed 300mm / s. (4) Perform P2.5 scribing on the outside of the conductive connection region, remove all functional layers (about 150nm) and the 50nm thick ITO layer (i.e. 33.3% of the total thickness of the ITO layer), and obtain the transition connection region. The line drawn on P2.5 indicates laser scanning. The parameters for laser scanning are: picosecond laser; laser wavelength: 1064nm; power: 25W; pulse frequency: 800kHz; scanning speed: 300mm / s. (5) Deposit top electrode material ITO on the surface of the P2 slot and the functional layer of the P2 slot isolation functional layer to obtain a top electrode layer (ITO layer) with a thickness of 100nm. At the same time, deposit an ITO layer on the transition connection region to form an lead-out electrode layer. Then, scribing P3 along the right side of each P2 slot cuts off the top electrode layer and the functional layer to form an isolation trench without damaging the sidewall of the P1 slot protected by the functional layer, forming a P3 slot (i.e., an isolation trench) with a width of 45μm and a depth of 250nm. Then, scribing P3 in the conductive connection region cuts off the top electrode layer and the functional layer to form a trench, resulting in a top electrode layer with an isolation trench. The P3 line is drawn using laser scanning, and the parameters of the laser scanning are as follows: the laser is a picosecond laser; the laser wavelength is 532nm; the power is 6W; the pulse frequency is 30kHz; and the scanning line speed is 300mm / s. (6) Perform P4 scribing on the outer region of the lead-out electrode layer to remove the bottom electrode layer and top electrode layer in the outer region of the lead-out electrode layer. The P4 scribing is a laser scan. The parameters of the laser scan are: the laser is a picosecond laser; the laser wavelength is 1064nm; the power is 40W; and the pulse frequency is 800kHz. (7) A metal busbar (a copper-clad aluminum composite material plated with chromium) is attached to the lead-out electrode layer to obtain an organic solar cell with a lateral lead-out electrode.

[0103] Example 3 An organic solar cell with a side-extracted electrode, comprising the following steps: (1) Provide a glass substrate with a 150nm thick transparent conductive oxide ITO layer on its surface. After cleaning and drying, use a picosecond laser with a wavelength of 1064nm and set the laser parameters as follows: power 30W, pulse frequency 220kHz, scanning speed 500mm / s to scribing P1 lines to form P1 grooves with a width of 35μm and a depth of 150nm. Isolate the ITO layer into 64 parallel stripes to determine the boundary of the sub-cell and obtain the bottom electrode layer isolated by the P1 groove. (2) By means of slit coating, a first charge transport layer (ZnO) with a thickness of 30 nm, a photoactive layer (PM6:Y6:L8-BO, mass ratio 1:1.12:0.28) with a thickness of 100 nm and a second charge transport layer (MoO3) with a thickness of 20 nm are sequentially deposited on the surface of the P1 groove and the bottom electrode layer to obtain the functional layer; (3) Draw a P2 line along the right side of each P1 slot on the surface of the functional layer without damaging the sidewall of the P1 slot protected by the functional layer, cut the functional layer to expose the bottom electrode layer, and form a P2 slot with a width of 60μm and a depth of 150nm to obtain a functional layer isolated by the P2 slot. The two outermost P2 slots on the functional layer of P2 slot isolation are scribed multiple times in a compound line pattern, reserving an ITO layer with a width of 300μm as the subsequent conductive connection area; the P2 scriber uses a picosecond laser with a wavelength of 532nm, and the laser parameters are set as follows: power 6W, pulse frequency 40kHz, and scanning speed 300mm / s. (4) Perform P2.5 scribing on the outside of the conductive connection region, remove all functional layers (about 150nm), and obtain the transition connection region; The line drawn on P2.5 indicates laser scanning. The parameters for laser scanning are: picosecond laser; laser wavelength: 1064nm; power: 25W; pulse frequency: 800kHz; scanning speed: 300mm / s. (5) Deposit top electrode material ITO on the surface of the P2 slot and the functional layer of the P2 slot isolation functional layer to obtain a top electrode layer (ITO layer) with a thickness of 100nm. At the same time, deposit an ITO layer on the transition connection region to form an lead-out electrode layer. Then, scribing P3 along the right side of each P2 slot cuts off the top electrode layer and the functional layer to form an isolation trench without damaging the sidewall of the P1 slot protected by the functional layer, forming a P3 slot (i.e., an isolation trench) with a width of 45μm and a depth of 250nm. Then, scribing P3 in the conductive connection region cuts off the top electrode layer and the functional layer to form a trench, resulting in a top electrode layer with an isolation trench. The P3 line is drawn using laser scanning, and the parameters of the laser scanning are as follows: the laser is a picosecond laser; the laser wavelength is 532nm; the power is 6W; the pulse frequency is 30kHz; and the scanning line speed is 300mm / s. (6) Perform P4 scribing on the outer region of the lead-out electrode layer to remove the bottom electrode layer and top electrode layer in the outer region of the lead-out electrode layer. The P4 scribing is a laser scan. The parameters of the laser scan are: the laser is a picosecond laser; the laser wavelength is 1064nm; the power is 40W; and the pulse frequency is 800kHz. (7) A metal busbar (a copper-clad aluminum composite material plated with chromium) is attached to the lead-out electrode layer to obtain an organic solar cell with a lateral lead-out electrode.

[0104] Example 4 An organic solar cell with a side-extracted electrode, comprising the following steps: (1) Provide a glass substrate with a 150nm thick transparent conductive oxide ITO layer on its surface. After cleaning and drying, use a picosecond laser with a wavelength of 1064nm and set the laser parameters as follows: power 30W, pulse frequency 220kHz, scanning speed 500mm / s to scribing P1 lines to form P1 grooves with a width of 35μm and a depth of 150nm. Isolate the ITO layer into 64 parallel stripes to determine the boundary of the sub-cell and obtain the bottom electrode layer isolated by the P1 groove. (2) By means of slit coating, a first charge transport layer (ZnO) with a thickness of 30 nm, a photoactive layer (PM6:Y6:L8-BO, mass ratio 1:1.12:0.28) with a thickness of 100 nm and a second charge transport layer (MoO3) with a thickness of 20 nm are sequentially deposited on the surface of the P1 groove and the bottom electrode layer to obtain the functional layer; (3) Draw a P2 line along the right side of each P1 groove on the surface of the functional layer without damaging the sidewall of the P1 groove that has been protected by the functional layer, cut the functional layer to expose the bottom electrode layer, and form a P2 groove with a width of 60μm and a depth of 150nm to obtain a functional layer isolated by the P2 groove. The two outermost P2 slots on the functional layer of P2 slot isolation are scribed multiple times in a compound line pattern, reserving an ITO layer with a width of 300μm as the subsequent conductive connection area; the P2 scriber uses a picosecond laser with a wavelength of 532nm, and the laser parameters are set as follows: power 6W, pulse frequency 40kHz, and scanning speed 300mm / s. (4) Perform P2.5 scribing on the outside of the conductive connection region, remove all functional layers (about 150nm) and ITO layer (i.e. 100% of the total thickness of ITO layer) to obtain the transition connection region; The line drawn on P2.5 indicates laser scanning. The parameters for laser scanning are: picosecond laser; laser wavelength: 1064nm; power: 25W; pulse frequency: 800kHz; scanning speed: 300mm / s. (5) Deposit top electrode material ITO on the surface of the P2 slot and the functional layer of the P2 slot isolation functional layer to obtain a top electrode layer (ITO layer) with a thickness of 100nm. At the same time, deposit an ITO layer on the transition connection region to form an lead-out electrode layer. Then, scribing P3 along the right side of each P2 slot cuts off the top electrode layer and the functional layer to form an isolation trench without damaging the sidewall of the P1 slot protected by the functional layer, forming a P3 slot (i.e., an isolation trench) with a width of 45μm and a depth of 250nm. Then, scribing P3 in the conductive connection region cuts off the top electrode layer and the functional layer to form a trench, resulting in a top electrode layer with an isolation trench. The P3 line is drawn using laser scanning, and the parameters of the laser scanning are as follows: the laser is a picosecond laser; the laser wavelength is 532nm; the power is 6W; the pulse frequency is 30kHz; and the scanning line speed is 300mm / s. (6) Perform P4 scribing on the outer region of the lead-out electrode layer to remove the bottom electrode layer and top electrode layer in the outer region of the lead-out electrode layer. The P4 scribing is a laser scan. The parameters of the laser scan are: the laser is a picosecond laser; the laser wavelength is 1064nm; the power is 40W; and the pulse frequency is 800kHz. (7) A metal busbar (a copper-clad aluminum composite material plated with chromium) is attached to the lead-out electrode layer to obtain an organic solar cell with a lateral lead-out electrode.

[0105] Example 5 An organic solar cell with a side-extracted electrode, comprising the following steps: (1) Provide a glass substrate with a 150nm thick transparent conductive oxide ITO layer on its surface. After cleaning and drying, use a picosecond laser with a wavelength of 1064nm and set the laser parameters as follows: power 30W, pulse frequency 220kHz, scanning speed 500mm / s to scribing P1 lines to form P1 grooves with a width of 35μm and a depth of 150nm. Isolate the ITO layer into 64 parallel stripes to determine the boundary of the sub-cell and obtain the bottom electrode layer isolated by the P1 groove. (2) By means of slit coating, a first charge transport layer ZnO with a thickness of 30 nm, a photoactive layer (PM6:Y6:L8-BO, mass ratio 1:1.12:0.28) with a thickness of 100 nm and a second charge transport layer (MoO3) with a thickness of 20 nm are sequentially deposited on the surface of the P1 groove and the bottom electrode layer to obtain the functional layer; (3) Draw a P2 line along the right side of each P1 slot on the surface of the functional layer without damaging the sidewall of the P1 slot protected by the functional layer, cut the functional layer to expose the bottom electrode layer, and form a P2 slot with a width of 60μm and a depth of 150nm to obtain a functional layer isolated by the P2 slot. The two outermost P2 slots on the functional layer of P2 slot isolation are scribed multiple times in a compound line pattern, reserving an ITO layer with a width of 300μm as the subsequent conductive connection area; the P2 scriber uses a picosecond laser with a wavelength of 532nm, and the laser parameters are set as follows: power 6W, pulse frequency 40kHz, and scanning speed 300mm / s. (4) Perform P2.5 scribing on the outside of the conductive connection region, remove all functional layers (about 150nm) and the 25nm thick ITO layer (i.e. 16.67% of the total thickness of the ITO layer), and obtain the transition connection region. The line drawn on P2.5 indicates laser scanning. The parameters for laser scanning are: picosecond laser; laser wavelength: 1064nm; power: 25W; pulse frequency: 800kHz; scanning speed: 300mm / s. (5) A top electrode material Ag is deposited on the surface of the P2 slot and the functional layer of the P2 slot isolation functional layer to obtain a top electrode layer (Ag layer) with a thickness of 100 nm. At the same time, an Ag layer is deposited on the transition connection region to form an lead-out electrode layer. Then, P3 lines are scribed along the right side of each P2 slot to cut off the top electrode layer and the functional layer to form an isolation trench without damaging the sidewall of the P1 slot protected by the functional layer, forming a P3 slot with a width of 45 μm and a depth of 250 nm (i.e., an isolation trench). Then, P3 lines are scribed in the conductive connection region to cut off the top electrode layer and the functional layer to form a trench, resulting in a top electrode layer with an isolation trench. The P3 line is drawn by laser scanning, and the parameters of the laser scanning are as follows: the laser is a picosecond laser; the laser wavelength is 532nm; the power is 6W; the pulse frequency is 60kHz; and the scanning line speed is 300mm / s. (6) Perform P4 scribing on the outer region of the lead-out electrode layer to remove the bottom electrode layer and top electrode layer in the outer region of the lead-out electrode layer. The P4 scribing is a laser scan. The parameters of the laser scan are: the laser is a picosecond laser; the laser wavelength is 1064nm; the power is 40W; and the pulse frequency is 800kHz. (7) A metal busbar (a copper-clad aluminum composite material plated with chromium) is attached to the lead-out electrode layer to obtain an organic solar cell with a lateral lead-out electrode.

[0106] Comparative Example 1 An organic solar cell, the steps are as follows: (1) Provide a glass substrate with a 150nm thick transparent conductive oxide ITO layer on its surface. After cleaning and drying, use a picosecond laser with a wavelength of 1064nm and set the laser parameters as follows: power 30W, pulse frequency 220kHz, scanning speed 500mm / s to scribing P1 lines, forming P1 grooves with a width of 35μm and a depth of 170nm, isolating the ITO layer into 64 parallel stripes, determining the sub-cell boundary, and obtaining the bottom electrode layer isolated by the P1 groove. (2) By means of slit coating, a first charge transport layer (ZnO) with a thickness of 30 nm, a photoactive layer (PM6:Y6:L8-BO, mass ratio 1:1.12:0.28) with a thickness of 100 nm and a second charge transport layer (MoO3) with a thickness of 20 nm are sequentially deposited on the surface of the P1 groove and the bottom electrode layer to obtain the functional layer; (3) Draw a P2 line along the right side of each P1 groove on the surface of the functional layer without damaging the sidewall of the P1 groove that has been protected by the functional layer, cut the functional layer to expose the bottom electrode layer, and form a P2 groove with a width of 60μm and a depth of 150nm to obtain a functional layer isolated by the P2 groove. The P2 line drawing uses a picosecond laser with a wavelength of 532nm. The laser parameters are set as follows: power 6W, pulse frequency 40kHz, and scanning speed 300mm / s. (4) Deposit top electrode material ITO on the surface of the P2 slot and the functional layer of the P2 slot isolation functional layer to obtain a top electrode layer (ITO layer) with a thickness of 100nm; then scribing P3 along the right side of each P2 slot to cut the top electrode layer and the functional layer to form an isolation trench without damaging the sidewall of the P1 slot protected by the functional layer, forming a P3 slot (i.e., an isolation trench) with a width of 45μm and a depth of 250nm, to obtain a top electrode layer with an isolation trench; The P3 line is drawn using laser scanning, and the parameters of the laser scanning are as follows: the laser is a picosecond laser; the laser wavelength is 532nm; the power is 6W; the pulse frequency is 30kHz; and the scanning line speed is 300mm / s. (5) Perform P4 scribing on the outer outer region of the sub-battery to remove the bottom electrode layer and top electrode layer of the outer outer region of the sub-battery. The P4 scribing is a laser scan. The parameters of the laser scan are: the laser is a picosecond laser; the laser wavelength is 1064nm; the power is 40W; and the pulse frequency is 800kHz. (6) Attach metal busbars (chromium-plated copper-clad aluminum composite material) to the sub-electrodes on both sides to obtain an organic solar cell.

[0107] A schematic diagram of the preparation method for this comparative example of organic solar cells is shown below. Figure 5 As shown; a schematic diagram of an organic solar cell is shown below. Figure 6 As shown; an external diagram of an organic solar cell is shown below. Figure 7 As shown. In Figure 6 In the diagram, 1 represents the first electrode lead-out region, 2 represents the sub-cell region, and 3 represents the second electrode lead-out region. Figure 7 In the image, the left image shows the front of an organic solar cell, and the right image shows the back of an organic solar cell.

[0108] Test case The organic solar cells with lateral lead-out electrodes prepared in Examples 1-4 and the organic solar cell prepared in Comparative Example 1 were subjected to performance tests, and the results are shown in Table 1.

[0109] Table 1 Performance test results of different organic solar cells

[0110] The performance of the organic solar cells with lateral electrodes prepared in Examples 1-5 and the organic solar cell prepared in Comparative Example 1 were tested respectively, and the stability data comparison graph is shown below. Figure 8 As shown.

[0111] From Table 1 and Figure 8It can be seen that, under the same illumination conditions, the effective illumination area of ​​the organic solar cell with side-exit electrodes prepared in this invention is increased by about 5% compared with the conventional structure, and the average short-circuit current density is increased by about 7%. After simulated lamination pressure test (60 kPa, 150 °C), the short-circuit failure rate of the organic solar cell structure with side-exit electrodes prepared in this invention is reduced compared with the conventional organic solar cell structure prepared in Comparative Example 1, and the output voltage loss is reduced. In the dual 85 aging test at 85 °C / 85% RH, after 100 h, the efficiency retention rate of the conventional organic solar cell drops to 80-90% of the initial value, while the efficiency retention rate of the organic solar cell with side-exit electrodes prepared in this invention is still above 90%, and the stability is significantly improved.

[0112] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. An organic solar cell with a lateral electrode, characterized in that, It includes a transparent substrate and a first electrode lead-out area, a sub-cell area and a second electrode lead-out area disposed on the transparent substrate. The sub-cell area is located between the first electrode lead-out area and the second electrode lead-out area, and the first electrode lead-out area, the sub-cell area and the second electrode lead-out area are separated by a trench. The sub-cell region is composed of two or more sub-cells connected in series side by side; the sub-cell includes a bottom electrode layer, a functional layer and a top electrode layer stacked sequentially on a transparent substrate; The first electrode lead-out area and the second electrode lead-out area independently include lead-out electrode layers and busbars attached to the lead-out electrodes; The lead-out electrode layer is disposed on a transparent substrate and is electrically connected to the bottom electrode layer of the sub-battery region.

2. The organic solar cell with a lateral electrode according to claim 1, characterized in that, The functional layer in each sub-cell covers the top and one side of the bottom electrode layer, so that the bottom electrode layers of two adjacent sub-cells are isolated by the functional layer; the top electrode layer covers the top and one side of the functional layer, so that the top electrode layer is in contact with the bottom electrode layer of the adjacent sub-cell, and the top electrode layer is separated from the adjacent sub-cell by an isolation trench.

3. The organic solar cell with a lateral electrode according to claim 2, characterized in that, The functional layer includes a first charge transport layer, a photoactive layer, and a second charge transport layer stacked sequentially.

4. The organic solar cell with a lateral electrode according to claim 3, characterized in that, The first charge transport layer is selected from one or more of fullerenes and their derivatives, perylene imide derivatives, N-type conjugated polymers, N-type non-conjugated polymers, and inorganic N-type metal oxides; The second charge transport layer is selected from one or more of triphenylamine derivatives, carbazole materials, conductive polymer composites, polyphosphate carbazole polymers, and transition metal oxides.

5. The organic solar cell with a lateral electrode according to claim 3, characterized in that, The photoactive layer includes a donor material and an acceptor material. The donor material is selected from one or more of PM6, D18, PTQ10 and PCE10. The acceptor material is selected from one or more of Y6, N3, Y6-BO, BTP-eC9 and L8-BO.

6. The organic solar cell with a lateral electrode according to claim 2, characterized in that, The width of the trench is 200~400μm; the width of the isolation trench is 30~45μm.

7. A method for preparing an organic solar cell with a lateral lead-out electrode as described in any one of claims 1 to 6, characterized in that, Includes the following steps: Two or more sub-cells connected in parallel in the middle region of a transparent substrate with a bottom electrode layer on its surface are prepared to obtain a sub-cell region. A portion of the bottom electrode layer is reserved on the transparent substrate on both sides of the sub-cell as a conductive connection region. The portion of the bottom electrode layer on the transparent substrate on both sides of the conductive connection region is thinned by laser etching to obtain the transition connection region. A top electrode layer material is deposited on the transition connection region to obtain the lead-out electrode layer; By attaching busbars to the lead-out electrode layer, an organic solar cell with lateral lead-out electrodes is obtained.

8. The preparation method according to claim 7, characterized in that, The method for preparing the sub-cell region includes: A P1 line is scribing is performed on a transparent substrate with a bottom electrode layer on its surface, and the bottom electrode layer is cut to form a P1 groove, resulting in a bottom electrode layer isolated by the P1 groove; the number of the P1 groove is one or more. A functional layer material is deposited on the surface of the P1 groove and the bottom electrode layer to obtain a functional layer. A P2 line is scribing is performed on the surface of the functional layer to cut the functional layer and form a P2 groove, resulting in a functional layer isolated by the P2 groove; the P2 line is scribing along the same side of each P1 groove without damaging the sidewall of the P1 groove that is protected by the functional layer. A top electrode material is deposited on the surface of the P2 groove and the functional layer to obtain a top electrode layer; The top electrode layer is scribed with P3 lines to cut off the top electrode layer and the functional layer to form an isolation trench, resulting in a top electrode layer with isolation trenches; the P3 lines are scribed along the same side of each P2 groove without damaging the sidewall of the P1 groove that is protected by the functional layer.

9. The preparation method according to claim 8, characterized in that, The width of the P1 groove is 20~40μm; the width of the P2 groove is 50~70μm; the width of the isolation trench is 30~45μm; and the width of the trench is 200~400μm.

10. The preparation method according to claim 8, characterized in that, P1 scribing, P2 scribing, laser etching thinning, and P3 scribing are all laser scanning; The parameters for the P1 line drawing include: the laser is a picosecond laser; the laser wavelength is 1064nm; the power is 10~50W; the pulse frequency is 1~1000kHz; and the scanning speed is 300~500mm / s. The parameters for the P2 line drawing include: the laser is a picosecond laser; the laser wavelength is 532nm; the power is 3~10W; the pulse frequency is 1~500kHz; and the scanning speed is 300~500mm / s. The laser etching thinning is a laser scanning process, and the parameters of the laser scanning include: the laser is a picosecond laser; the laser wavelength is 1064nm; the power is 10~50W; the pulse frequency is 1~1000kHz; and the scanning speed is 300~500mm / s. The parameters for the P3 line drawing include: the laser is a picosecond laser or a nanosecond laser; the laser wavelength is 532nm; the power is 3~10W; the pulse frequency is 1~500kHz; and the scanning speed is 300~500mm / s.

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