An active matrix organic electroluminescent display

Abstract

Disclosed is an active matrix organic electroluminescent display comprising a stacked organic electroluminescent device, which comprises a common P-type charge generation layer and a common hole transport layer; the common P-type charge generation layer comprises a first P-type conductive doping material and a first hole transport material, and the common hole transport layer comprises a second hole transport material; the HOMO energy level of the second hole transport material is deeper than that of the first hole transport material; the common P-type charge generation layer and the common hole transport layer have a higher lateral resistance value, which can more significantly inhibit lateral crosstalk between pixels in the display while maintaining excellent device performance of low voltage and high efficiency, and has obvious advantages in commercial applications.

Description

Technical Field

[0001] This invention relates to an active-matrix organic light-emitting display. More particularly, it relates to an active-matrix organic light-emitting display comprising stacked organic light-emitting devices. Background Technology

[0002] Organic electronic devices include, but are not limited to, the following types: organic light-emitting diodes (OLEDs), organic field-effect transistors (O-FETs), organic light-emitting transistors (OLETs), organic photovoltaic devices (OPVs), dye-sensitized solar cells (DSSCs), organic optical detectors, organic photosensors, organic field-effect devices (OFQDs), light-emitting electrochemical cells (LECs), organic laser diodes, and organic electroluminescent devices.

[0003] In 1987, Tang and Van Slyke of Eastman Kodak reported a bilayer organic electroluminescent device comprising an arylamine hole transport layer and a tri-8-hydroxyquinoline-aluminum layer as both an electron transport and luminescent layer (Applied Physics Letters, 1987, 51(12): 913-915). Once a bias voltage was applied to the device, green light was emitted. This invention laid the foundation for the development of modern organic light-emitting diodes (OLEDs). State-of-the-art OLEDs can include multiple layers, such as charge injection and transport layers, charge and exciton blocking layers, and one or more luminescent layers between the cathode and anode. Because OLEDs are self-emissive solid-state devices, they offer enormous potential for display and lighting applications. Furthermore, the inherent properties of organic materials, such as their flexibility, make them well-suited for specialized applications, such as in the fabrication of flexible substrates.

[0004] OLEDs can be categorized into three different types based on their light-emitting mechanism. The OLED invented by Tang and van Slyke is a fluorescent OLED. It uses only singlet state emission. The triplet state generated in the device is wasted through non-radiative decay channels. Therefore, the internal quantum efficiency (IQE) of fluorescent OLEDs is only 25%. This limitation hindered the commercialization of OLEDs. In 1997, Forrest and Thompson reported phosphorescent OLEDs, which use triplet emission from complexed heavy metals as the emitter. Therefore, both singlet and triplet states can be harvested, achieving 100% IQE. Due to its high efficiency, the discovery and development of phosphorescent OLEDs directly contributed to the commercialization of active-matrix OLEDs (AMOLEDs). More recently, Adachi achieved high efficiency through thermally activated delayed fluorescence (TADF) of organic compounds. These emitters have small singlet-triple state gaps, making it possible for excitons to return from the triplet state to the singlet state. In TADF devices, triplet excitons can generate singlet excitons through reverse intersystem crossing, resulting in high IQE.

[0005] OLEDs can also be classified into small-molecule OLEDs and polymer OLEDs based on the form of the materials used. Small molecules refer to any organic or organometallic material that is not a polymer. Small molecules can have large molecular weights, provided they have a precise structure. Dendritic polymers with well-defined structures are considered small molecules. Polymer OLEDs include conjugated polymers and non-conjugated polymers with side-chain luminescent groups. Small-molecule OLEDs can become polymer OLEDs if post-polymerization occurs during manufacturing.

[0006] Various OLED manufacturing methods exist. Small molecule OLEDs are typically manufactured via vacuum thermal evaporation. Polymer OLEDs are manufactured using solution methods, such as spin coating, inkjet printing, and nozzle printing. Small molecule OLEDs can also be manufactured using solution methods if the material can be dissolved or dispersed in a solvent.

[0007] The emission color of OLEDs can be achieved through the design of the luminescent material structure. OLEDs can include one or more luminescent layers to achieve the desired spectrum. Green, yellow, and red OLEDs using phosphorescent materials have been successfully commercialized. Blue phosphorescent devices still suffer from issues such as blue unsaturation, short device lifetime, and high operating voltage. Commercial full-color OLED displays typically employ a hybrid strategy, using blue fluorescence and phosphorescent yellow, or red and green. Currently, the rapid decrease in efficiency of phosphorescent OLEDs at high brightness remains a problem. Furthermore, a more saturated emission spectrum, higher efficiency, and longer device lifetime are desired.

[0008] In display applications, lateral crosstalk is a key issue affecting display performance, especially in high-resolution displays. Lateral crosstalk between pixels reduces image sharpness and quality, making it a critical factor in display performance. Active-matrix organic light-emitting diode (OLED) displays, which include stacked organic light-emitting diodes, typically contain a common layer. Lateral crosstalk between pixels is generally caused by this common layer. When a large number of holes migrate laterally from one pixel to other pixels through the common layer, it causes pixel or color crosstalk. This results in one or more neighboring pixels potentially being lit when a specific pixel is displayed, leading to undesirable crosstalk phenomena. This results in blurred images, color overflow, and decreased contrast, negatively impacting the display's performance. Therefore, while ensuring excellent performance for each pixel, such as low voltage and high efficiency, suppressing or even eliminating lateral crosstalk between pixels is a crucial issue that the industry has been focusing on and researching. Summary of the Invention

[0009] This invention addresses at least some of the aforementioned problems by disclosing an active-matrix organic light-emitting diode (OLED) display. The display comprises a stacked OLED, which includes at least one common P-type charge generation layer and at least one common hole transport layer. The common P-type charge generation layer includes a first P-type conductive doped material and a first hole transport material, while the common hole transport layer includes a second hole transport material. The HOMO energy level of the second hole transport material is deeper than that of the first hole transport material. The common P-type charge generation layer and the common hole transport layer have higher lateral resistance values. When applied to an active-matrix OLED display, this invention can more significantly suppress lateral crosstalk between pixels while maintaining excellent device performance with low voltage and high efficiency, offering significant advantages for commercial applications.

[0010] According to one embodiment of the present invention, an active matrix organic electroluminescent display is disclosed, which includes a plurality of pixels;

[0011] Each of the plurality of pixels contains at least one stacked organic electroluminescent device;

[0012] The stacked organic electroluminescent device includes an anode, a cathode, at least one common P-type charge generation layer disposed between the anode and the cathode, and a common hole transport layer disposed between the common P-type charge generation layer and the cathode and in direct contact with the common P-type charge generation layer.

[0013] The common P-type charge generation layer and the common hole transport layer are shared by at least two adjacent pixels;

[0014] The common P-type charge generation layer comprises a first P-type conductive doped material and a first hole transport material.

[0015] The common hole transport layer includes a second hole transport material;

[0016] The first hole transport material is different from the second hole transport material;

[0017] The HOMO level of the first hole transport material is HOMO1, and the HOMO level of the second hole transport material is HOMO2, where HOMO1–HOMO2 > 0 eV.

[0018] The common P-type charge generation layer and the common hole transport layer simultaneously satisfy the following two conditions:

[0019] (1) The transverse resistance of film layer A, which is composed of the common P-type charge generation layer and the common hole transport layer, measured by interdigitated electrodes is R1, and R1≥15MΩ.

[0020] (2) R1 / R2≥1.1, where R2 is the transverse resistance of film B measured by interdigitated electrodes. Film B is the same as film A, except that the second hole transport material in the common hole transport layer of film A is replaced by the first hole transport material.

[0021] According to one embodiment of the present invention, an electronic device is also disclosed, which includes the active-matrix organic electroluminescent display described in the above embodiments.

[0022] This invention discloses an active-matrix organic light-emitting diode (OLED) display with a specific device structure. The OLED display comprises a stacked OLED, which includes a common P-type charge generation layer and a common hole transport layer. The common P-type charge generation layer includes a first P-type conductive doped material and a first hole transport material, while the common hole transport layer includes a second hole transport material. The HOMO energy level of the second hole transport material is deeper than that of the first hole transport material. The common P-type charge generation layer and the common hole transport layer have higher lateral resistance values. When applied to an active-matrix OLED display, this invention can more significantly suppress lateral crosstalk between pixels while maintaining excellent device performance with low voltage and high efficiency, offering significant advantages for commercial applications. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of a single-layer organic light-emitting device.

[0024] Figure 2 This is a schematic diagram of another single-layer organic light-emitting device.

[0025] Figure 3This is a schematic diagram of the structure of a stacked organic light-emitting device included in the display of the present invention.

[0026] Figure 4 This is a schematic diagram of the structure of the active matrix organic electroluminescent display of the present invention.

[0027] Figure 5 This is a schematic diagram of the crosstalk test device.

[0028] Figure 6 This is a top view of the interdigitated electrodes.

[0029] Figure 7 This is a partial cross-sectional view of the interdigitated electrode. Detailed Implementation

[0030] OLEDs can be manufactured on various substrates, such as glass, plastic, and metal. Figure 1 A single-layer organic light-emitting device 100 is illustrated schematically and non-limitingly. Device 100 may include a substrate 101, an anode 110, a hole injection layer 120, a hole transport layer 130, an electron blocking layer 140, a light-emitting layer 150, a hole blocking layer 160, an electron transport layer 170, an electron injection layer 180, and a cathode 190. The figures are not necessarily drawn to scale, and some layer structures may be omitted as needed; for example, the hole blocking layer 160 may be omitted if necessary. Device 100 can be fabricated by sequentially depositing the described layers. The properties and functions of each layer, as well as exemplary materials, are described in more detail in columns 6-10 of U.S. Patent 7,279,704B2, the entire contents of which are incorporated herein by reference.

[0031] Each of these layers has numerous examples. For instance, a flexible and transparent substrate-anode combination is disclosed in U.S. Patent No. 5,844,363, which is incorporated herein by reference in its entirety. An example of a p-doped hole transport layer is m-MTDATA doped with F4-TCNQ at a molar ratio of 50:1, as disclosed in U.S. Patent Application Publication No. 2003 / 0230980, which is incorporated herein by reference in its entirety. An example of a host material is disclosed in U.S. Patent No. 6,303,238 to Thompson et al., which is incorporated herein by reference in its entirety. An example of an n-doped electron transport layer is BPhen doped with Li at a molar ratio of 1:1, as disclosed in U.S. Patent Application Publication No. 2003 / 0230980, which is incorporated herein by reference in its entirety. Examples of cathodes are disclosed in U.S. Patent Nos. 5,703,436 and 5,707,745, which are incorporated herein by reference in their entirety. These cathodes comprise composite cathodes having a thin metal layer, such as Mg:Ag, overlaid with a transparent, conductive, sputter-deposited ITO layer. The principles and use of barrier layers are described in more detail in U.S. Patent No. 6,097,147 and U.S. Patent Application Publication No. 2003 / 0230980, which are also incorporated herein by reference in their entirety. Examples of implantation layers are provided in U.S. Patent Application Publication No. 2004 / 0174116, which is also incorporated herein by reference in its entirety. A description of protective layers can be found in U.S. Patent Application Publication No. 2004 / 0174116, which is also incorporated herein by reference in its entirety.

[0032] The layered structure described above is provided through non-limiting embodiments. The functionality of an OLED can be achieved by combining the various layers described above, or some layers can be omitted entirely. It may also include other layers not explicitly described. Within each layer, a single material or a mixture of multiple materials can be used to achieve optimal performance. Any functional layer may include several sublayers. For example, a light-emitting layer may have two different light-emitting materials to achieve a desired emission spectrum.

[0033] In one embodiment, an OLED can be described as having an "organic layer" disposed between a cathode and an anode. This organic layer may include one or more layers.

[0034] OLEDs also require an encapsulation layer, such as Figure 2 A single-layer organic light-emitting device 200 is shown schematically and non-limitingly, which is related to... Figure 1The difference lies in the fact that an encapsulation layer 102 may also be included above the cathode 190 to protect against harmful substances from the environment, such as moisture and oxygen. The "encapsulation layer" can be a thin-film encapsulation with a thickness of less than 100 micrometers, comprising one or more thin films directly deposited onto the device, or it can be a cover glass adhered to a substrate. Any material capable of providing encapsulation can be used as the encapsulation layer, such as glass or an organic-inorganic hybrid layer. The encapsulation layer should be placed directly or indirectly on the outside of the OLED device. Multilayer thin-film encapsulation is described in U.S. Patent 7,968,146B2, the entire contents of which are incorporated herein by reference.

[0035] In this paper, two or more OLED units can be connected in series through a charge generation layer to form a stacked OLED, such as... Figure 3 A schematic, non-limiting structural diagram 300 of a multilayer organic light-emitting device included in the display of the present invention is shown. The device 300 may include an anode 310, a first light-emitting unit 330a, a charge-generating layer 340, a second light-emitting unit 330b, and a cathode 320. The first light-emitting unit 330a includes a hole injection layer 331a, a hole transport layer 332a, an electron blocking layer 333a, a light-emitting layer 334a, a hole blocking layer 335a, and an electron transport layer 336a. Depending on the needs, some layers in the first light-emitting unit may be omitted, or other layers not explicitly described may be included, which will not be elaborated here. The charge generation layer 340 includes an N-type charge generation layer 340a and a P-type charge generation layer 340b. The N-type charge generation layer 340a can also function as the electron injection layer of the first light-emitting unit, and the P-type charge generation layer 340b can also function as the hole injection layer of the second light-emitting unit. The N-type charge generation layer can also be considered as the electron injection layer. As needed, other layers can also be included between the N-type charge generation layer 340a and the P-type charge generation layer 340b. For example, a buffer layer can also be included between the N-type charge generation layer 340a and the P-type charge generation layer 340b, which is not shown in the figure. The second light-emitting unit 330b includes a hole transport layer 331b, an electron blocking layer 332b, a light-emitting layer 333b, a hole blocking layer 334b, an electron transport layer 335b, an electron injection layer 336b, and a cathode 320. Depending on the needs, the second light-emitting unit may also include other layers not explicitly described, such as a hole injection layer (not shown in the figure) between the P-type charge generation layer 340b and the hole transport layer 331b. Some layers in the second light-emitting unit may also be omitted, and will not be elaborated further here. An encapsulation layer (not shown in the figure) may also be included above the cathode 320.

[0036] Active OLED displays manufactured according to embodiments of the present invention can be incorporated into various consumer products having one or more electronic component modules (or units) of the display. Some examples of such consumer products include flat panel displays, monitors, medical monitors, televisions, billboards, head-up displays, fully or partially transparent displays, flexible displays, smartphones, tablet computers, phablets, wearable devices, smartwatches, laptop computers, digital cameras, portable camcorders, viewfinders, microdisplays, 3D displays, and vehicle displays.

[0037] The materials and structures described in this article can also be used in other organic electronic devices listed above.

[0038] As used herein, "top" means furthest from the substrate, and "bottom" means closest to the substrate. When the first layer is described as being "disposed" on the second layer, the first layer is positioned further from the substrate. Unless it is specified that the first layer "contacts" the second layer, other layers may exist between the first and second layers. For example, even if various organic layers exist between the cathode and anode, the cathode may still be described as being "disposed" on the anode.

[0039] As used herein, “solution-handleable” means capable of being dissolved, dispersed or transported in and / or deposited from a liquid medium in the form of a solution or suspension.

[0040] In this article, the term "independent driving" refers to two or more OLEDs being controlled separately. It uses active matrix driving technology, where each pixel has an independent thin-film transistor (TFT) for control. Active matrix organic light-emitting displays can independently control the light emission of each pixel, so that the pixels can emit light continuously and independently, ultimately forming the desired image.

[0041] In this document, the term "common P-type charge generation layer" refers to a common P-type charge generation layer shared by at least two adjacent pixels in an active-matrix organic light-emitting diode (OLED) display. That is, the common P-type charge generation layer is continuous and undivided among multiple pixels. Figure 4 The common P-type charge generation layer 406b in the middle.

[0042] In this document, the term "common hole transport layer" refers to a common hole transport layer shared by at least two adjacent pixels in an active-matrix organic light-emitting diode (OLED) display, meaning that the common hole transport layer is continuous and undivided among multiple pixels, such as... Figure 4 The common P-type charge generation layer 407 in the middle.

[0043] In this article, the term "P-type conductive doped material" refers to a dopant with oxidizing ability, which has a strong electron-withdrawing ability and is an electron acceptor.

[0044] In this article, the terms "same" and "different" are used. "Same" means that two or more materials have the same chemical structural formula, or that the difference between two or more materials lies only in the fact that some or all of the hydrogen in the chemical structural formula is replaced by deuterium. Conversely, "different" means that the organic materials used have different chemical structural formulas (i.e., the difference in chemical structural formula is not only in the fact that some or all of the hydrogen in the molecular formula is replaced by deuterium).

[0045] In this paper, all "HOMO levels" and "LUMO levels" are represented by negative values. The smaller the value (i.e., the larger the absolute value), the deeper the energy level. For example, in this paper, HOMO1–HOMO2>0eV means that the HOMO energy level of the first hole transport material is numerically larger (i.e., the absolute value is smaller) than the HOMO energy level of the second hole transport material, which means that the HOMO energy level of the second hole transport material is deeper than the HOMO energy level of the first hole transport material.

[0046] In this document, "the mass doping ratio of the first P-type conductive dopant in the common P-type charge generation layer" refers to the percentage of the mass of the first P-type conductive dopant in the common P-type charge generation layer relative to the total mass of the common P-type charge generation layer. For example, assuming the mass of the first P-type conductive dopant in the common P-type charge generation layer is 20 mg, and the total mass of the common P-type charge generation layer is 100 mg, then the mass doping ratio of the first P-type conductive dopant in the common P-type charge generation layer is 20%.

[0047] Figure 4 The schematic diagram of the active-matrix organic electroluminescent display of the present invention is shown in an illustrative and non-limiting manner, as follows: Figure 4As indicated by the dashed lines, the display includes pixels 4A and 4B. Both pixels 4A and 4B contain stacked OLEDs, each with two light-emitting units. 400a and 400b are the anodes of pixels 4A and 4B, respectively. 401 is the common hole injection layer of the first light-emitting units, 402 is the common hole transport layer of the first light-emitting units, 403a and 403b are the prime layers (also called electron blocking layers) of the first light-emitting units of pixels 4A and 4B, respectively. 404a and 404b are the light-emitting layers of the first light-emitting units of pixels 4A and 4B, respectively. 405 is the common electron transport layer of the first light-emitting units. Depending on the needs, the first light-emitting unit may also include other layers not explicitly described. For example, a hole blocking layer may be included between the light-emitting layers 404a and 404b and the common electron transport layer 405, which is not shown in the figure. Some layers in the first light-emitting unit may also be omitted, and will not be elaborated further here. 406a is a common N-type charge generation layer, 406b is a common P-type charge generation layer, 407 is a common hole transport layer for the second light-emitting units, 408a and 408b are the light-emitting auxiliary layers (prime layers, also called electron blocking layers) for the second light-emitting units of pixels 4A and 4B, respectively, 409a and 409b are the light-emitting layers for the second light-emitting units of pixels 4A and 4B, respectively, 410 is a common electron transport layer for the second light-emitting units, 411 is a common electron injection layer for the second light-emitting units, and 412 is a common cathode. Depending on the needs, the second light-emitting unit may also include other layers not explicitly described, such as a hole blocking layer between the light-emitting layers 409a and 409b and the common electron transport layer 410 (not shown in the figure). Some layers in the second light-emitting unit may also be omitted, and will not be elaborated further here. By applying a single driving current through the anodes 400a and 400b, each pixel will operate independently. For example, if a current is applied to pixel 4A but no current is applied to pixel 4B, only pixel 4A will be lit. During this process, if the lateral resistance of the common P-type charge generation layer 406b and the common hole transport layer 407 of the second light-emitting unit is too small, current will flow from pixel 4A through the common P-type charge generation layer 406b and the common hole transport layer 407 of the second light-emitting unit to pixel 4B, causing pixel 4B to emit light, which will cause color crosstalk.

[0048] Figure 6 and Figure 7 A schematic, non-limiting structural diagram of the interdigitated electrode used in this invention is shown. Figure 6 This is a top view of the interdigitated electrodes. Figure 7 This is a partial cross-sectional view of the interdigitated electrode, such as... Figure 6 and Figure 7As shown, the interdigitated electrode has 40 ITO pointers, each with a width of 0.02 mm. The 40 ITO pointers form 39 trench regions, each with a length of 1.92 mm, a width of 20 μm (i.e., the finger gap is 20 μm, which means the distance between two adjacent ITO pointers is 20 μm), and a height of 200 nm.

[0049] When a ligand is believed to directly contribute to the photosensitivity of the emitting material, the ligand can be called "photosensitive." When a ligand is believed not to contribute to the photosensitivity of the emitting material, the ligand can be called "auxiliary," but auxiliary ligands can alter the properties of photosensitivity ligands.

[0050] It is believed that the internal quantum efficiency (IQE) of fluorescent OLEDs can exceed the 25% spin statistical limit through delayed fluorescence. Delayed fluorescence can generally be divided into two types: P-type delayed fluorescence and E-type delayed fluorescence. P-type delayed fluorescence is generated by triplet-triplet annihilation (TTA).

[0051] On the other hand, E-type delayed fluorescence does not depend on the collision of two triplet states, but rather on the transition between triplet and singlet excited states. Compounds capable of producing E-type delayed fluorescence need to have a very small singlet-triple gap to facilitate the transition between energy states. Thermal energy can activate the transition from triplet to singlet. This type of delayed fluorescence is also called thermally activated delayed fluorescence (TADF). A significant characteristic of TADF is that the delayed component increases with increasing temperature. If the reverse system crossover (RISC) rate is fast enough to minimize the nonradiative decay from the triplet state, the fraction of singlet excited states that are refilled can reach 75%. The total singlet fraction can be 100%, far exceeding the 25% spin statistics of electrogenerated excitons.

[0052] E-type delayed fluorescence can be observed in excited complex systems or single compounds. Unbound by theory, it is believed that E-type delayed fluorescence requires the luminescent material to have a small singlet-triple bandgap (ΔE). S-T Organic, nonmetallic donor-acceptor luminescent materials may be able to achieve this. The emission of these materials is typically characterized as donor-acceptor charge transfer (CT) emission. Spatial separation of the HOMO and LUMO in these donor-acceptor compounds usually produces small ΔE. S-T These states can include CT states. Typically, donor-acceptor luminescent materials are constructed by linking an electron donor moiety (e.g., an amino or carbazole derivative) with an electron acceptor moiety (e.g., an N-containing six-membered aromatic ring).

[0053] Definition of the term "substituent group"

[0054] Halogens or halides—as used herein—include fluorine, chlorine, bromine, and iodine.

[0055] Alkyl – as used herein, includes straight-chain and branched alkyl groups. An alkyl group can be an alkyl group having 1 to 20 carbon atoms, preferably an alkyl group having 1 to 12 carbon atoms, and more preferably an alkyl group having 1 to 6 carbon atoms. Examples of alkyl groups include methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl, n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, n-heptadecyl, n-octadecyl, neopentyl, 1-methylpentyl, 2-methylpentyl, 1-pentylhexyl, 1-butylpentyl, 1-heptyloctyl, and 3-methylpentyl. Among the above, methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, neopentyl, and n-hexyl are preferred. Additionally, the alkyl group may optionally be substituted.

[0056] Cycloalkyl – as used herein, comprises cyclic alkyl groups. The cycloalkyl group can be a cycloalkyl group having 3 to 20 carbon atoms, preferably a cycloalkyl group having 4 to 10 carbon atoms. Examples of cycloalkyl groups include cyclobutyl, cyclopentyl, cyclohexyl, 4-methylcyclohexyl, 4,4-dimethylcyclohexyl, 1-adamantyl, 2-adamantyl, 1-norbornyl, 2-norbornyl, etc. Among the above, cyclopentyl, cyclohexyl, 4-methylcyclohexyl, and 4,4-dimethylcyclohexyl are preferred. Furthermore, the cycloalkyl group may optionally be substituted.

[0057] Heteroalkyl – as used herein, a heteroalkyl group comprises one or more carbon atoms in an alkyl chain that are replaced by heteroatoms selected from the group consisting of nitrogen, oxygen, sulfur, selenium, phosphorus, silicon, germanium, and boron atoms. The heteroalkyl group can be a heteroalkyl group having 1 to 20 carbon atoms, preferably a heteroalkyl group having 1 to 10 carbon atoms, and more preferably a heteroalkyl group having 1 to 6 carbon atoms. Examples of heteroalkyl groups include methoxymethyl, ethoxymethyl, ethoxyethyl, methylthiomethyl, ethylthiomethyl, ethylthioethyl, methoxymethoxymethyl, ethoxymethoxymethyl, ethoxyethoxyethyl, hydroxymethyl, hydroxyethyl, hydroxypropyl, mercaptomethyl, mercaptoethyl, mercaptopropyl, aminomethyl, aminoethyl, aminopropyl, dimethylaminomethyl, trimethylgermanylmethyl, trimethylgermanylethyl, trimethylgermanylisopropyl, dimethylethylgermanylmethyl, dimethylisopropylgermanylmethyl, tert-butyldimethylgermanylmethyl, triethylgermanylmethyl, triethylgermanylethyl, triisopropylgermanylmethyl, triisopropylgermanylethyl, trimethylsilylmethyl, trimethylsilylethyl, trimethylsilylisopropyl, triisopropylsilylmethyl, triisopropylsilylethyl. Additionally, heteroalkyl groups may optionally be substituted.

[0058] Alkenyl – as used herein, encompasses straight-chain, branched, and cyclic olefinic groups. An alkenyl group can be an alkenyl group containing 2 to 20 carbon atoms, preferably an alkenyl group having 2 to 10 carbon atoms. Examples of alkenyl groups include vinyl, propenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1,3-butadienyl, 1-methylvinyl, styryl, 2,2-diphenylvinyl, 1,2-diphenylvinyl, 1-methylallyl, 1,1-dimethylallyl, 2-methylallyl, 1-phenylallyl, 2-phenylallyl, 3-phenylallyl, 3,3-diphenylallyl, 1,2-dimethylallyl, 1-phenyl-1-butenyl, 3-phenyl-1-butenyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, cycloheptenyl, cyclohepttrienyl, cyclooctenyl, cyclooctatetraenyl, and norbornyl. In addition, the alkenyl group can be optionally substituted.

[0059] Alkynyl – as used herein, encompasses straight-chain alkynyl groups. An alkynyl group can be one containing 2 to 20 carbon atoms, preferably 2 to 10 carbon atoms. Examples of alkynyl groups include ethynyl, propynyl, propynyl, 1-butynyl, 2-butynyl, 3-butynyl, 1-pentynyl, 2-pentynyl, 3,3-dimethyl-1-butynyl, 3-ethyl-3-methyl-1-pentynyl, 3,3-diisopropyl-1-pentynyl, phenylethynyl, phenylpropynyl, etc. Among the above, ethynyl, propynyl, propynyl, 1-butynyl, 2-butynyl, 3-butynyl, 1-pentynyl, and phenylethynyl are preferred. Furthermore, the alkynyl group may be optionally substituted.

[0060] Aryl or aromatic group – as used herein, both non-fused and fused systems are considered. The aryl group can be an aryl group having 6 to 30 carbon atoms, preferably an aryl group having 6 to 20 carbon atoms, and more preferably an aryl group having 6 to 12 carbon atoms. Examples of aryl groups include phenyl, biphenyl, terphenyl, triphenylene, tetraphenylene, naphthalene, anthracene, fenene, fluorene, pyrene, etc. Perylene and azulene, preferably phenyl, biphenyl, terphenyl, triphenylene, fluorene, and naphthalene. Examples of non-fused aryl groups include phenyl, biphenyl-2-yl, biphenyl-3-yl, biphenyl-4-yl, p-terphenyl-4-yl, p-terphenyl-3-yl, p-terphenyl-2-yl, m-terphenyl-4-yl, m-terphenyl-3-yl, m-terphenyl-2-yl, o-tolyl, m-tolyl, p-tolyl, p-(2-phenylpropyl)phenyl, 4'-methyldiphenyl, 4”-tert-butyl-p-terphenyl-4-yl, o-cumyl, m-cumyl, p-cumyl, 2,3-xylyl, 3,4-xylyl, 2,5-xylyl, mesitylene, and m-tetraphenyl. Additionally, the aryl group may optionally be substituted.

[0061] Heterocyclic groups or heterocycles – as used herein, consider non-aromatic cyclic groups. Non-aromatic heterocyclic groups include saturated heterocyclic groups having 3-20 ring atoms and unsaturated non-aromatic heterocyclic groups having 3-20 ring atoms, wherein at least one ring atom is selected from the group consisting of nitrogen, oxygen, sulfur, selenium, silicon, phosphorus, germanium, and boron atoms. Preferred non-aromatic heterocyclic groups are those having 3 to 7 ring atoms, including at least one heteroatom such as nitrogen, oxygen, silicon, or sulfur. Examples of non-aromatic heterocyclic groups include ethylene oxide, oxetane, tetrahydrofuranyl, tetrahydropyranyl, dioxopentacyclic, dioxahexacyclic, acridineyl, dihydropyrroleyl, tetrahydropyrroleyl, piperidinyl, oxazolidinyl, morpholinyl, piperazineyl, oxetane-heptanetrienyl, thioheptanetrienyl, azirane-heptanetrienyl, and tetrahydrothiorroleyl. In addition, the heterocyclic group can be optionally substituted.

[0062] Heteroaryl – as used herein – can be a non-fused or fused heteroaryl group comprising 1 to 5 heteroatoms, wherein at least one heteroatom is selected from the group consisting of nitrogen, oxygen, sulfur, selenium, silicon, phosphorus, germanium, and boron. Isoaryl also refers to heteroaryl. Heteroaryl can be a heteroaryl having 3 to 30 carbon atoms, preferably a heteroaryl having 3 to 20 carbon atoms, and more preferably a heteroaryl having 3 to 12 carbon atoms. Suitable heteroaryl groups include dibenzothiophene, dibenzofuran, dibenzoselenophene, furan, thiophene, benzofuran, benzothiophene, benzoselenophene, carbazole, indolecarbazole, pyridineindole, pyrrolopyridine, pyrazole, imidazole, triazole, oxazole, thiazole, oxadiazole, oxtriazole, dioxazole, thiadiazol, pyridine, pyrazine, pyrazine, triazine, oxazine, oxthiazine, oxadiazine, indole, benzimidazole, indazole, indoxazine, benzoxazole, benzoisoxazole, benzothiazole, quinoline, isoquinoline Phosphine, cyclophosphine, quinazoline, quinoxaline, naphthidine, phthalazine, pteridine, xanthan, acridine, phenazine, phenothiazine, benzofuranopyridine, furanodipyridine, benzothiophenopyridine, thiophenodipyridine, benzoselenophenopyridine, selenobenzodipyridine, preferably dibenzothiophene, dibenzofuran, dibenzoselenophene, carbazole, indolocarbazole, imidazole, pyridine, triazine, benzimidazole, 1,2-azaborane, 1,3-azaborane, 1,4-azaborane, boronazole and its aza analogues. Additionally, the heteroaryl group may optionally be substituted.

[0063] Alkoxy groups—as used herein—are represented by -O-alkyl, -O-cycloalkyl, -O-heteroalkyl, or -O-heterocyclic groups. Examples and preferred examples of alkyl, cycloalkyl, heteroalkyl, and heterocyclic groups are the same as described above. An alkoxy group can be an alkoxy group having 1 to 20 carbon atoms, preferably an alkoxy group having 1 to 6 carbon atoms. Examples of alkoxy groups include methoxy, ethoxy, propoxy, butoxy, pentoxy, hexoxy, cyclopropyloxy, cyclobutyloxy, cyclopentoxy, cyclohexyloxy, tetrahydrofuranyloxy, tetrahydropyranyloxy, methoxypropyloxy, ethoxyethyloxy, methoxymethyloxy, and ethoxymethyloxy. Additionally, alkoxy groups may optionally be substituted.

[0064] Aryloxy group – as used herein, is represented by -O-aryl or -O-heteroaryl. Examples and preferred examples of aryl and heteroaryl groups are the same as described above. The aryloxy group can be an aryloxy group having 6 to 30 carbon atoms, preferably an aryloxy group having 6 to 20 carbon atoms. Examples of aryloxy groups include phenoxy and biphenyloxy groups. Additionally, the aryloxy group may optionally be substituted.

[0065] Arylalkyl – as used herein, encompasses aryl-substituted alkyl groups. An arylalkyl group can be an arylalkyl group having 7 to 30 carbon atoms, preferably an arylalkyl group having 7 to 20 carbon atoms, and more preferably an arylalkyl group having 7 to 13 carbon atoms. Examples of arylalkyl groups include benzyl, 1-phenylethyl, 2-phenylethyl, 1-phenylisopropyl, 2-phenylisopropyl, phenyl tert-butyl, α-naphthylmethyl, 1-α-naphthyl-ethyl, 2-α-naphthylethyl, 1-α-naphthylisopropyl, 2-α-naphthylisopropyl, β-naphthylmethyl, 1-β-naphthyl-ethyl, 2-β-naphthyl-ethyl, 1-β-naphthylisopropyl, 2-β-naphthylisopropyl, p-methylbenzyl, m-methylbenzyl The compounds include alkyl groups, such as o-methylbenzyl, p-chlorobenzyl, m-chlorobenzyl, o-chlorobenzyl, p-bromobenzyl, m-bromobenzyl, o-bromobenzyl, p-iodobenzyl, m-iodobenzyl, o-iodobenzyl, p-hydroxybenzyl, m-hydroxybenzyl, o-hydroxybenzyl, p-aminobenzyl, m-aminobenzyl, o-aminobenzyl, p-nitrobenzyl, m-nitrobenzyl, o-nitrobenzyl, p-cyanobenzyl, m-cyanobenzyl, o-cyanobenzyl, 1-hydroxy-2-phenylisopropyl, and 1-chloro-2-phenylisopropyl. Among the above, benzyl, p-cyanobenzyl, m-cyanobenzyl, o-cyanobenzyl, 1-phenylethyl, 2-phenylethyl, 1-phenylisopropyl, and 2-phenylisopropyl are preferred. Additionally, the alkyl group may optionally be substituted.

[0066] Alkylsilyl – as used herein, encompasses alkyl-substituted silyl groups. The alkylsilyl group can be an alkylsilyl group having 3 to 20 carbon atoms, preferably an alkylsilyl group having 3 to 10 carbon atoms. Examples of alkylsilyl groups include trimethylsilyl, triethylsilyl, methyldiethylsilyl, ethyldimethylsilyl, tripropylsilyl, tributylsilyl, triisopropylsilyl, methyldiisopropylsilyl, dimethylisopropylsilyl, tritert-butylsilyl, triisobutylsilyl, dimethyltert-butylsilyl, and methylditert-butylsilyl. Furthermore, the alkylsilyl group may optionally be substituted.

[0067] Arylsilane – as used herein, encompasses at least one aryl-substituted silane group. The arylsilane can be an arylsilane having 6 to 30 carbon atoms, preferably an arylsilane having 8 to 20 carbon atoms. Examples of arylsilanes include triphenylsilyl, phenyldiphenylsilyl, diphenylbiphenylsilyl, phenyldiethylsilyl, diphenylethylsilyl, phenyldimethylsilyl, diphenylmethylsilyl, phenyldiisopropylsilyl, diphenylisopropylsilyl, diphenylbutylsilyl, diphenylisobutylsilyl, and diphenyltert-butylsilyl. Additionally, the arylsilane may optionally be substituted.

[0068] Alkylgermanium group – as used herein, encompasses alkyl-substituted germanium groups. The alkylgermanium group can be an alkylgermanium group having 3 to 20 carbon atoms, preferably an alkylgermanium group having 3 to 10 carbon atoms. Examples of alkylgermanium groups include trimethylgermanium, triethylgermanium, methyldiethylgermanium, ethyldimethylgermanium, tripropylgermanium, tributylgermanium, triisopropylgermanium, methyldiisopropylgermanium, dimethylisopropylgermanium, tritert-butylgermanium, triisobutylgermanium, dimethyltert-butylgermanium, and methylditert-butylgermanium. Furthermore, the alkylgermanium group may optionally be substituted.

[0069] Arylgermanium – as used herein, encompasses a germanium group substituted with at least one aryl or heteroaryl group. The arylgermanium group can be an arylgermanium group having 6 to 30 carbon atoms, preferably an arylgermanium group having 8 to 20 carbon atoms. Examples of arylgermanium groups include triphenylgermanium, phenyldiphenylgermanium, diphenylbiphenylgermanium, phenyldiethylgermanium, diphenylethylgermanium, phenyldimethylgermanium, diphenylmethylgermanium, phenyldiisopropylgermanium, diphenylisopropylgermanium, diphenylbutylgermanium, diphenylisobutylgermanium, and diphenyltert-butylgermanium. Additionally, the arylgermanium group may optionally be substituted.

[0070] The term "aza" in azadibenzofuran, azadibenzothiophene, etc., refers to the substitution of one or more CH groups in the corresponding aromatic segment by a nitrogen atom. For example, azatriphenylene includes dibenzo[f,h]quinoxaline, dibenzo[f,h]quinoline, and other analogs having two or more nitrogen atoms in the ring system. Other nitrogen analogs of the aforementioned aza derivatives will readily conceive of those skilled in the art, and all such analogs are identified as being included in the terminology used herein.

[0071] In this disclosure, unless otherwise defined, the term "substituted alkyl," "substituted cycloalkyl," "substituted heteroalkyl," "substituted heterocyclic," "substituted aralkyl," "substituted alkoxy," "substituted aryloxy," "substituted alkenyl," "substituted alkynyl," "substituted aryl," "substituted heteroaryl," "substituted alkylsilyl," "substituted arylsilyl," "substituted alkylgermanium," "substituted arylgermanium," "substituted amino," "substituted acyl," "substituted carbonyl," and "substituted carboxylic acid" are used interchangeably. Substituted ester group, substituted sulfinyl group, substituted sulfonyl group, substituted phosphinyl group, refers to any one of the following groups: alkyl, cycloalkyl, heteroalkyl, heterocyclic, aralkyl, alkoxy, aryloxy, alkenyl, alkynyl, aryl, heteroaryl, alkylsilyl, arylsilyl, alkylgermanium, arylgermanium, amino, acyl, carbonyl, carboxylic acid, ester group, sulfinyl, sulfonyl, and phosphinyl. One or more groups can be selected from deuterium, halogen, unsubstituted alkyl groups having 1-20 carbon atoms, and unsubstituted alkyl groups having... Cycloalkyl groups with 3-20 carbon atoms, unsubstituted heteroalkyl groups with 1-20 carbon atoms, unsubstituted heterocyclic groups with 3-20 carbon atoms, unsubstituted aralkyl groups with 7-30 carbon atoms, unsubstituted alkoxy groups with 1-20 carbon atoms, unsubstituted aryloxy groups with 6-30 carbon atoms, unsubstituted alkenyl groups with 2-20 carbon atoms, unsubstituted alkynyl groups with 2-20 carbon atoms, and unsubstituted aryl groups with 6-30 carbon atoms. Unsubstituted heteroaryl groups having 3-30 carbon atoms, unsubstituted alkylsilyl groups having 3-20 carbon atoms, unsubstituted arylsilyl groups having 6-20 carbon atoms, unsubstituted alkylgermanium groups having 3-20 carbon atoms, unsubstituted arylgermanium groups having 6-20 carbon atoms, and unsubstituted amino, acyl, carbonyl, carboxylic acid, ester, cyano, isocyano, hydroxyl, mercapto, sulfinyl, sulfonyl, phosphine, and combinations thereof having 0-20 carbon atoms.

[0072] It should be understood that when a molecular segment is described as a substituent or otherwise attached to another part, its name may be written according to whether it is a segment (e.g., phenyl, phenylene, naphthyl, dibenzofuranyl) or according to whether it is a whole molecule (e.g., benzene, naphthalene, dibenzofuran). As used herein, these different ways of specifying substituents or attaching segments are considered equivalent.

[0073] In the compounds mentioned in this disclosure, hydrogen atoms can be partially or completely replaced by deuterium. Other atoms such as carbon and nitrogen can also be replaced by their other stable isotopes. Substitution with other stable isotopes in the compounds is likely preferred due to their ability to enhance device efficiency and stability.

[0074] In the compounds mentioned in this disclosure, multiple substitution refers to the range including disubstitution, up to the maximum number of available substitutions. When a substituent in a compound mentioned in this disclosure represents multiple substitution (including disubstitution, trisubstitution, tetrasubstitution, etc.), it means that the substituent can be present at multiple available substitution positions on its linkage structure. The substituent present at multiple available substitution positions can be the same structure or different structures.

[0075] In the compounds mentioned in this disclosure, unless explicitly specified, for example, that adjacent substituents can optionally connect to form a ring, adjacent substituents in the compounds cannot connect to form a ring. In the compounds mentioned in this disclosure, the optional connection of adjacent substituents to form a ring includes both cases where adjacent substituents can connect to form a ring and cases where adjacent substituents do not connect to form a ring. When adjacent substituents can optionally connect to form a ring, the formed ring can be a monocyclic or polycyclic ring (including spirocyclic, bridged, fused rings, etc.), as well as an alicyclic, heterocyclic, aromatic, or heteroaromatic ring. In this context, adjacent substituents can refer to substituents bonded to the same atom, substituents bonded to carbon atoms directly bonded to each other, or substituents bonded to carbon atoms further away. Preferably, adjacent substituents refer to substituents bonded to the same carbon atom and substituents bonded to carbon atoms directly bonded to each other.

[0076] The statement that adjacent substituents can optionally connect to form a ring is also intended to be understood as referring to two substituents bonded to the same carbon atom connecting to each other via chemical bonds to form a ring, as exemplified by the following formula:

[0077]

[0078] The statement that adjacent substituents can optionally link to form a ring is also intended to be understood as referring to two substituents bonded to carbon atoms directly bonded to each other forming a ring through chemical bonds, as exemplified by the following formula:

[0079]

[0080] The statement that adjacent substituents can optionally connect to form a ring is also intended to be understood as referring to two substituents bonded to a further distant carbon atom connecting to each other by chemical bonds to form a ring, which can be exemplified by the following formula:

[0081]

[0082] Furthermore, the statement that adjacent substituents can optionally connect to form a ring is also intended to mean that, in the case where one of the two adjacent substituents represents hydrogen, the second substituent bonds to the position where the hydrogen atom is bonded, thereby forming a ring. This is illustrated by the following example:

[0083]

[0084] According to one embodiment of the present invention, an active matrix organic electroluminescent display is disclosed, which includes a plurality of pixels; each of the plurality of pixels includes at least one stacked organic electroluminescent device;

[0085] The stacked organic electroluminescent device includes an anode, a cathode, at least one common P-type charge generation layer disposed between the anode and the cathode, and a common hole transport layer disposed between the common P-type charge generation layer and the cathode and in direct contact with the common P-type charge generation layer.

[0086] The common P-type charge generation layer and the common hole transport layer are shared by at least two adjacent pixels;

[0087] The common P-type charge generation layer comprises a first P-type conductive doped material and a first hole transport material.

[0088] The common hole transport layer includes a second hole transport material;

[0089] The first hole transport material is different from the second hole transport material;

[0090] The HOMO level of the first hole transport material is HOMO1, and the HOMO level of the second hole transport material is HOMO2, where HOMO1–HOMO2 > 0 eV.

[0091] The common P-type charge generation layer and the common hole transport layer simultaneously satisfy the following two conditions:

[0092] (1) The transverse resistance of film layer A, which is composed of the common P-type charge generation layer and the common hole transport layer, measured by interdigitated electrodes is R1, and R1≥15MΩ.

[0093] (2) R1 / R2≥1.1, where R2 is the transverse resistance of film B measured by interdigitated electrodes. Film B is the same as film A, except that the second hole transport material in the common hole transport layer of film A is replaced by the first hole transport material.

[0094] According to one embodiment of the present invention, the common P-type charge generation layer is composed of a first P-type conductive doped material and a first hole transport material; the common hole transport layer is composed of a second hole transport material.

[0095] According to one embodiment of the present invention, the film layer A is composed of a common P-type charge generation layer and a common hole transport layer, wherein the common P-type charge generation layer in film layer A is composed of the first P-type conductive doped material and the first hole transport material; and the common hole transport layer in film layer A is composed of the second hole transport material.

[0096] According to one embodiment of the present invention, the film layer B is composed of a common P-type charge generation layer and a common hole transport layer B, wherein the common P-type charge generation layer in the film layer B is composed of the first P-type conductive doped material and the first hole transport material; and the common hole transport layer B in the film layer B is composed of the first hole transport material.

[0097] According to one embodiment of the present invention, the common P-type charge generation layer in film layer A and film layer B is completely identical.

[0098] According to one embodiment of the present invention, wherein R1 ≥ 16 MΩ; or R1 ≥ 17 MΩ; or R1 ≥ 18 MΩ; or R1 ≥ 19 MΩ; or R1 ≥ 20 MΩ; or R1 ≥ 22 MΩ; or R1 ≥ 24 MΩ; or R1 ≥ 26 MΩ; or R1 ≥ 28 MΩ; or R1 ≥ 30 MΩ; or R1 ≥ 32 MΩ; or R1 ≥ 34 MΩ; or R1 ≥ 36 MΩ; or R1 ≥ 38 MΩ; or R1 ≥ 40 MΩ; or R1 ≥ 45 MΩ; or R1 ≥ 50 MΩ; or R1 ≥ 55 MΩ; or R1 ≥ 60 MΩ.

[0099] According to one embodiment of the present invention, wherein R1 ≤ 10000MΩ; or R1 ≤ 9000MΩ; or R1 ≤ 8000MΩ; or R1 ≤ 7000MΩ; or R1 ≤ 6000MΩ; or R1 ≤ 5000MΩ; or R1 ≤ 4000MΩ; or R1 ≤ 3000MΩ; or R1 ≤ 2000MΩ; or R1 ≤ 1000MΩ.

[0100] According to one embodiment of the present invention, wherein R1 / R2 ≥ 1.12; or R1 / R2 ≥ 1.13; or R1 / R2 ≥ 1.14; or R1 / R2 ≥ 1.15; or R1 / R2 ≥ 1.16; or R1 / R2 ≥ 1.17; or R1 / R2 ≥ 1.18; or R1 / R2 ≥ 1.19; or R1 / R2 ≥ 1.2; or R1 / R2 ≥ 1.22; or R1 / R2 ≥ 1.24; or R1 / R2 ≥ 1. 26; or R1 / R2 ≥ 1.28; or R1 / R2 ≥ 1.3; or R1 / R2 ≥ 1.35; or R1 / R2 ≥ 1.4; or R1 / R2 ≥ 1.45; or R1 / R2 ≥ 1.5; or R1 / R2 ≥ 1.55; or R1 / R2 ≥ 1.6; or R1 / R2 ≥ 1.65; or R1 / R2 ≥ 1.7; or R1 / R2 ≥ 1.75; or R1 / R2 ≥ 1.8; or R1 / R2 ≥ 1.85.

[0101] According to one embodiment of the present invention, R1 / R2 ≤ 100; or R1 / R2 ≤ 80; or R1 / R2 ≤ 60; or R1 / R2 ≤ 40; or R1 / R2 ≤ 20.

[0102] According to one embodiment of the present invention, wherein HOMO1–HOMO2 ≥ 0.01 eV; or HOMO1–HOMO2 ≥ 0.02 eV; or HOMO1–HOMO2 ≥ 0.03 eV; or HOMO1–HOMO2 ≥ 0.04 eV; or HOMO1–HOMO2 ≥ 0.05 eV; or HOMO1–HOMO2 ≥ 0.06 eV; or HOMO1–HOMO2 ≥ 0.07 eV; or HOMO1–HOMO2 ≥ 0.08 eV; or HOMO1–HOMO2 ≥ 0.09 eV; or HOMO1–HOMO2 ≥ 0.10 eV; or HOMO1–HOMO2 ≥ 0.11 eV; or HOMO1–HOMO2 ≥ 0.12 eV; or HOMO1–HOMO2 ≥ 0.13 eV.

[0103] According to one embodiment of the present invention, wherein HOMO1–HOMO2 ≤ 5 eV; or HOMO1–HOMO2 ≤ 2 eV; or HOMO1–HOMO2 ≤ 1 eV; or HOMO1–HOMO2 ≤ 0.8 eV; or HOMO1–HOMO2 ≤ 0.6 eV; or HOMO1–HOMO2 ≤ 0.4 eV; or HOMO1–HOMO2 ≤ 0.2 eV.

[0104] According to one embodiment of the present invention, wherein, at 10 mA / cm 2 Under a constant current density, the voltage of the stacked organic electroluminescent device is less than or equal to 8.6V; or the voltage is less than or equal to 8.4V; or the voltage is less than or equal to 8.2V; or the voltage is less than or equal to 8.0V; or the voltage is less than or equal to 7.8V; or the voltage is less than or equal to 7.6V; or the voltage is less than or equal to 7.4V; or the voltage is less than or equal to 7.2V; or the voltage is less than or equal to 7.0V; or the voltage is less than or equal to 6.8V; or the voltage is less than or equal to 6.6V; or the voltage is less than or equal to 8.6V; or the voltage is less than or equal to 8.4V; or the voltage is less than or equal to 8.2V; or the voltage is less than or equal to 7.0V; or the voltage is less than or equal to 6.8V; or the voltage is less than or equal to 6.6V; or the voltage is less than or equal to 8.6V; or the voltage is less than or equal to 8.4V; or the voltage is less than or equal to 8.2V; or the voltage is less than or equal to 7.0V; or the voltage is less than or equal to 6.8V; or the voltage is less than or equal to 6.6V; or the voltage is less than or equal to 8.6V; or the voltage is less than or equal to 8.4V; or the voltage is less than or equal to 7 ... The voltage is less than or equal to 6.4V; or the voltage is less than or equal to 6.3V; or the voltage is less than or equal to 6.2V; or the voltage is less than or equal to 6.1V; or the voltage is less than or equal to 6.0V; or the voltage is less than or equal to 5.9V; or the voltage is less than or equal to 5.8V; or the voltage is less than or equal to 5.7V; or the voltage is less than or equal to 5.6V; or the voltage is less than or equal to 5.5V; or the voltage is less than or equal to 5.4V; or the voltage is less than or equal to 5.3V; or the voltage is less than or equal to 5.2V.

[0105] According to one embodiment of the present invention, the thickness of the common hole transport layer is greater than or equal to 20 nm; or greater than or equal to 30 nm; or greater than or equal to 40 nm; or greater than or equal to 50 nm; or greater than or equal to 60 nm; or greater than or equal to 70 nm; or greater than or equal to 80 nm; or greater than or equal to 90 nm; or greater than or equal to 100 nm.

[0106] According to one embodiment of the present invention, the thickness of the common hole transport layer is less than or equal to 200 nm; or less than or equal to 150 nm.

[0107] According to one embodiment of the present invention, the LUMO energy level of the first P-type conductive doped material is LUMO1, -5.30eV≤LUMO1≤-4.8eV; or -5.20eV≤LUMO1≤-4.9eV; or -5.15eV≤LUMO1≤-4.95eV; or LUMO1-HOMO1≥0eV; or LUMO1-HOMO1≥0.02eV; or LUMO1-HOMO1≥0.04eV; or LUMO1-HOMO1≥0.05eV; or LUMO1-HOMO1≥0.06eV.

[0108] According to one embodiment of the present invention, the LUMO level of the first P-type conductive doped material is LUMO1, the HOMO level of the first hole transport material is HOMO1, and LUMO1-HOMO1≤0.5eV; or LUMO1-HOMO1≤0.4eV; or LUMO1-HOMO1≤0.3eV; or LUMO1-HOMO1≤0.2eV.

[0109] According to one embodiment of the present invention, the absolute value of the energy level difference between the LUMO energy level of the first P-type conductive doped material and the HOMO energy level of the first hole transport material is less than or equal to 0.1 eV; or less than or equal to 0.09 eV; or less than or equal to 0.08 eV; or less than or equal to 0.07 eV; or less than or equal to 0.06 eV.

[0110] According to one embodiment of the present invention, the mass doping ratio of the first P-type conductive doped material in the common P-type charge generation layer is greater than or equal to 7%; or greater than or equal to 8%; or greater than or equal to 9%; or greater than or equal to 10%; or greater than or equal to 11%; or greater than or equal to 12%; or greater than or equal to 13%; or greater than or equal to 14%.

[0111] According to one embodiment of the present invention, the method for testing the transverse resistance R1 is as follows: under a vacuum degree of approximately 10... - 6 Under Torr conditions, on a test substrate pre-fabricated with ITO interdigitated electrodes, a common P-type charge generation layer is first formed by co-deposition of a first P-type conductive dopant and a first hole transport material. Then, a second hole transport material is deposited on the P-type charge generation layer to form a common hole transport layer. The test substrate has a total of 40 ITO pointers, each with a width of 0.02 mm. The 40 ITO pointers form 39 trench regions, each with a length of 1.92 mm, a width of 20 μm, and a height of 200 nm. At room temperature, the test fixture is clamped onto the ITO electrodes, a voltage is applied, and the current is measured to obtain the resistance value of the region.

[0112] According to one embodiment of the present invention, the method for testing the transverse resistance R2 is as follows: under a vacuum degree of approximately 10... - 6Under Torr conditions, on a test substrate pre-fabricated with ITO interdigitated electrodes, a common P-type charge generation layer is first formed by co-deposition of a first P-type conductive dopant and a first hole transport material. Then, the first hole transport material is deposited on the P-type charge generation layer to form a common hole transport layer. The test substrate has a total of 40 ITO pointers, each with a width of 0.02 mm. The 40 ITO pointers form 39 trench regions, each with a length of 1.92 mm, a width of 20 μm, and a height of 200 nm. At room temperature, the test fixture is clamped onto the ITO electrode, a voltage is applied, and the current is measured to obtain the resistance value of the region.

[0113] According to one embodiment of the present invention, in the method for testing the lateral resistance R1, the thickness of the common P-type charge generation layer is... The thickness of the common hole transport layer is

[0114] According to one embodiment of the present invention, the stacked organic electroluminescent device includes a hole injection layer disposed between the common P-type charge generation layer and the anode.

[0115] According to one embodiment of the present invention, the hole injection layer is in direct contact with the anode.

[0116] According to one embodiment of the present invention, the hole injection layer comprises a second P-type conductive doped material and a third hole transport material.

[0117] According to one embodiment of the present invention, the second P-type conductive doped material and the first P-type conductive doped material may be the same or different.

[0118] According to one embodiment of the present invention, the second P-type conductive doped material is the same as the first P-type conductive doped material.

[0119] According to one embodiment of the present invention, the second P-type conductive doped material is different from the first P-type conductive doped material.

[0120] According to one embodiment of the present invention, the third hole transport material may be the same as or different from the first hole transport material.

[0121] According to one embodiment of the present invention, the third hole transport material is the same as the first hole transport material.

[0122] According to one embodiment of the present invention, the third hole transport material is different from the first hole transport material.

[0123] According to one embodiment of the present invention, the third hole transport material and the second hole transport material may be the same or different.

[0124] According to one embodiment of the present invention, the third hole transport material is the same as the second hole transport material.

[0125] According to one embodiment of the present invention, the third hole transport material is different from the second hole transport material.

[0126] According to one embodiment of the present invention, the P-type conductive doped material (first P-type conductive doped material or second P-type conductive doped material) is selected from the following compounds: quinone or quinone derivatives, axialene compounds, dehydrobenzoxazole and dehydrobenzothiazole compounds, bisoxazole or bisthiazole compounds, metal oxides, and metal sulfides.

[0127] According to one embodiment of the present invention, the P-type conductive doped material (first P-type conductive doped material or second P-type conductive doped material) is selected from the following compounds: quinones or quinone derivatives and similar structures, axialene compounds and similar structures, dehydrobenzoxazoles and dehydrobenzothiazoles and similar structures, bisoxazoles or bisthiazoles and similar structures, metal oxides, and metal sulfides.

[0128] According to one embodiment of the present invention, the p-type conductive doped material has a structure represented by Formula 1:

[0129]

[0130] in,

[0131] n is an integer selected from 1 to 5;

[0132] Ring A is selected from conjugated rings having 3-30 ring atoms;

[0133] R3 indicates monosubstituted, polysubstituted, or unsubstituted;

[0134] R1, R2, and R3, each time appearing, are selected from the group consisting of: hydrogen, deuterium, halogen, substituted or unsubstituted alkyl groups having 1-20 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3-20 cyclic carbon atoms, substituted or unsubstituted heteroalkyl groups having 1-20 carbon atoms, substituted or unsubstituted heterocyclic groups having 3-20 cyclic carbon atoms, substituted or unsubstituted aralkyl groups having 7-30 carbon atoms, substituted or unsubstituted alkoxy groups having 1-20 carbon atoms, substituted or unsubstituted aroxy groups having 6-30 carbon atoms, substituted or unsubstituted alkenyl groups having 2-20 carbon atoms, substituted or unsubstituted alkenyl groups, etc. The following are substituted alkynes having 2-20 carbon atoms, substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, substituted or unsubstituted alkylsilyl groups having 3-20 carbon atoms, substituted or unsubstituted arylsilyl groups having 6-20 carbon atoms, substituted or unsubstituted alkylgermanium groups having 3-20 carbon atoms, substituted or unsubstituted arylgermanium groups having 6-20 carbon atoms, and substituted or unsubstituted amino, acyl, carbonyl, carboxylic acid, ester, cyano, isocyano, hydroxyl, mercapto, sulfinyl, sulfonyl, phosphinyl, and combinations thereof having 0-20 carbon atoms.

[0135] Adjacent substituents R1, R2, and R3 can optionally connect to form a ring.

[0136] In this document, "ring A is selected from conjugated rings having 3-30 ring atoms" is intended to describe a ring structure having 3-30 ring atoms, and ring A possesses conjugated structural features. Exemplarily, ring A includes, but is not limited to, the structures shown in formulas A-1 to A-17 of this application. Ring A can be a monocyclic or polycyclic structure, wherein the polycyclic structure can be a fused ring structure or a double-bonded ring structure, or an integrally conjugated structure formed by connecting two conjugated rings with double bonds, as shown in formula A-12 of this application. Ring A can be a carbocyclic ring or a heterocyclic ring.

[0137] In this document, "adjacent substituents R1, R2, R3 can optionally connect to form a ring" is intended to mean that any one or more of adjacent substituent groups, such as between substituents R3, between substituents R1 and R2, between substituents R1 and R3, or between substituents R2 and R3, can connect to form a ring. It is obvious that these substituents may also not connect to form a ring.

[0138] According to one embodiment of the present invention, n is an even number.

[0139] According to one embodiment of the present invention, n is selected from 2, 4 or 6.

[0140] According to one embodiment of the present invention, n is selected from 1, 2 or 3.

[0141] According to one embodiment of the present invention, n is selected from 1 or 2.

[0142] According to one embodiment of the present invention, ring A is selected from a conjugated ring having 3-20 ring atoms.

[0143] According to one embodiment of the present invention, ring A is selected from a conjugated ring having 4-20 ring atoms.

[0144] According to one embodiment of the present invention, at least one of the substituents R1, R2 and R3 is a substituent containing at least one electron-withdrawing group.

[0145] According to one embodiment of the present invention, R1 and / or R2 are substituents containing at least one electron-withdrawing group.

[0146] According to one embodiment of the present invention, the Hammett constant of the electron-withdrawing group is ≥0.05.

[0147] According to one embodiment of the present invention, the Hammett constant of the electron-withdrawing group is ≥0.3.

[0148] According to one embodiment of the present invention, the Hammett constant of the electron-withdrawing group is ≥0.5.

[0149] The Hammett substituent constant of the electron-withdrawing group described in this invention is ≥0.05, for example ≥0.1, or ≥0.2; preferably ≥0.3; more preferably ≥0.5. It has a strong electron-withdrawing ability and can significantly reduce the LUMO energy level of the compound, thereby improving the charge mobility.

[0150] It should be noted that the Hammet substituent constant value includes the Hammet substituent para constant and / or meta constant. As long as both the para constant and the meta constant are greater than zero, and one of them is greater than or equal to 0.05, it can be used as the group selected in this invention.

[0151] According to one embodiment of the invention, the electron-withdrawing group is selected from the group consisting of: halogen, nitroso, nitro, acyl, carbonyl, carboxylic acid, ester, cyano, isocyano, SCN, OCN, SF5, borane, sulfinyl, sulfonyl, phosphoxy, azirrocycloyl, or any of the following groups substituted with one or more of halogen, nitroso, nitro, acyl, carbonyl, carboxylic acid, ester, cyano, isocyano, SCN, OCN, SF5, borane, sulfinyl, sulfonyl, phosphoxy, azirrocycloyl, having 1-20 carbon atoms. Alkyl groups, cycloalkyl groups having 3-20 carbon atoms, heteroalkyl groups having 1-20 carbon atoms, heterocyclic groups having 3-20 carbon atoms, aralkyl groups having 7-30 carbon atoms, alkoxy groups having 1-20 carbon atoms, aryloxy groups having 6-30 carbon atoms, alkenyl groups having 2-20 carbon atoms, alkynyl groups having 2-20 carbon atoms, aryl groups having 6-30 carbon atoms, heteroaryl groups having 3-30 carbon atoms, alksilyl groups having 3-20 carbon atoms, arylsilyl groups having 6-20 carbon atoms, and combinations thereof.

[0152] According to one embodiment of the invention, the electron-withdrawing group is selected from the group consisting of: halogen, nitroso, nitro, acyl, carbonyl, carboxylic acid, ester, SF5, borane, sulfinyl, sulfonyl, phosphoxy, azirrocycloyl, and any of the following groups substituted by one or more of halogen, nitroso, nitro, acyl, carbonyl, carboxylic acid, ester, cyano, isocyano, SCN, OCN, SF5, borane, sulfinyl, sulfonyl, phosphoxy, azirrocycloyl, having 1-20 carbon atoms. Alkyl groups, cycloalkyl groups having 3-20 carbon atoms, heteroalkyl groups having 1-20 carbon atoms, aralkyl groups having 7-30 carbon atoms, alkoxy groups having 1-20 carbon atoms, aroxy groups having 6-30 carbon atoms, alkenyl groups having 2-20 carbon atoms, alkynyl groups having 2-20 carbon atoms, aryl groups having 6-30 carbon atoms, heteroaryl groups having 3-30 carbon atoms, alksilyl groups having 3-20 carbon atoms, arylsilyl groups having 6-20 carbon atoms, and combinations thereof.

[0153] According to one embodiment of the invention, the electron-withdrawing group is selected from the group consisting of: fluorine, acyl, carbonyl, ester, SF5, boroalkyl, aziridine, and any of the following groups substituted by one or more of fluorine, cyano, isocyanate, SCN, OCN, SF5, CF3, OCF3, SCF3, aziridine: alkyl having 1-20 carbon atoms, cycloalkyl having 3-20 cyclic carbon atoms, heteroalkyl having 1-20 carbon atoms, aralkyl having 7-30 carbon atoms, alkoxy having 1-20 carbon atoms, aryloxy having 6-30 carbon atoms, alkenyl having 2-20 carbon atoms, alkynyl having 2-20 carbon atoms, aryl having 6-30 carbon atoms, heteroaryl having 3-30 carbon atoms, alkoxyl having 3-20 carbon atoms, arylsilyl having 6-20 carbon atoms, and combinations thereof.

[0154] According to one embodiment of the present invention, ring A is selected from the group consisting of formulas A-1 to A-17:

[0155]

[0156]

[0157] In this case, X is selected from N or CR3 each time it appears, either the same or different.

[0158] W is selected from O, S, Se, or NR3 each time it appears, either the same or different.

[0159] R3, each time appearing, is selected from hydrogen, deuterium, halogen, substituted or unsubstituted alkyl groups having 1-20 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3-20 cyclic carbon atoms, substituted or unsubstituted heteroalkyl groups having 1-20 carbon atoms, substituted or unsubstituted heterocyclic groups having 3-20 cyclic carbon atoms, substituted or unsubstituted aralkyl groups having 7-30 carbon atoms, substituted or unsubstituted alkoxy groups having 1-20 carbon atoms, substituted or unsubstituted aroxy groups having 6-30 carbon atoms, substituted or unsubstituted alkenyl groups having 2-20 carbon atoms, substituted or unsubstituted alkenyl groups having 2- Alkynyl with 20 carbon atoms, substituted or unsubstituted aryl with 6-30 carbon atoms, substituted or unsubstituted heteroaryl with 3-30 carbon atoms, substituted or unsubstituted alkylsilyl with 3-20 carbon atoms, substituted or unsubstituted arylsilyl with 6-20 carbon atoms, substituted or unsubstituted alkylgermanium with 3-20 carbon atoms, substituted or unsubstituted arylgermanium with 6-20 carbon atoms, substituted or unsubstituted amino, acyl, carbonyl, carboxylic acid, ester, cyano, isocyano, hydroxyl, mercapto, sulfinyl, sulfonyl, phosphinyl, or combinations thereof with 0-20 carbon atoms;

[0160] Adjacent substituents R3 can optionally connect to form a ring;

[0161] “﹋” indicates the connection position of the double bond in Equations A-1 to A-17 with Equation 1.

[0162] According to one embodiment of the present invention, ring A is selected from formula A-6, formula A-8, formula A-10, formula A-11 or formula A-12.

[0163] According to one embodiment of the present invention, the P-type conductive doped material has a structure represented by any one of Formulas 1-1 to 1-40:

[0164]

[0165]

[0166]

[0167] Among them, W is selected from the group consisting of O, S, C=O, S=O, O=S=O, Se and NR3 each time it appears, either the same or different.

[0168] Each time U appears, it is selected from the group consisting of O, S, CR1R2 and NR3, either the same or different.

[0169] R1, R2, and R3, each time appearing, are selected from the group consisting of: hydrogen, deuterium, halogen, substituted or unsubstituted alkyl groups having 1-20 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3-20 cyclic carbon atoms, substituted or unsubstituted heteroalkyl groups having 1-20 carbon atoms, substituted or unsubstituted heterocyclic groups having 3-20 cyclic carbon atoms, substituted or unsubstituted aralkyl groups having 7-30 carbon atoms, substituted or unsubstituted alkoxy groups having 1-20 carbon atoms, substituted or unsubstituted aroxy groups having 6-30 carbon atoms, substituted or unsubstituted alkenyl groups having 2-20 carbon atoms, substituted or unsubstituted alkenyl groups, etc. The following are substituted alkynes having 2-20 carbon atoms, substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, substituted or unsubstituted alkylsilyl groups having 3-20 carbon atoms, substituted or unsubstituted arylsilyl groups having 6-20 carbon atoms, substituted or unsubstituted alkylgermanium groups having 3-20 carbon atoms, substituted or unsubstituted arylgermanium groups having 6-20 carbon atoms, and substituted or unsubstituted amino, acyl, carbonyl, carboxylic acid, ester, cyano, isocyano, hydroxyl, mercapto, sulfinyl, sulfonyl, phosphinyl, and combinations thereof having 0-20 carbon atoms.

[0170] Adjacent substituents R1, R2, and R3 can optionally be linked to form a ring;

[0171] In equations 1-2, 1-9, 1-10, 1-23, 1-24, 1-27, 1-29, and 1-30, This indicates cis-trans isomerism.

[0172] According to one embodiment of the present invention, wherein the W is selected from O, S, S=O, O=S=O each time it appears.

[0173] According to one embodiment of the present invention, the W is selected from O or S each time it appears, either the same or different.

[0174] According to one embodiment of the present invention, W is selected from O.

[0175] According to one embodiment of the present invention, the U is selected from O or CR1R2.

[0176] According to one embodiment of the present invention, wherein R1, R2, and R3, each time appearing, are selected from the group consisting of: hydrogen, deuterium, halogen, nitrosyl, nitro, acyl, carbonyl, carboxylic acid, ester, cyano, isocyanate, SCN, OCN, SF5, borane, sulfinyl, sulfonyl, phosphoxy, unsubstituted alkyl having 1-20 carbon atoms, unsubstituted cycloalkyl having 3-20 ring carbon atoms, unsubstituted alkoxy having 1-20 carbon atoms, unsubstituted alkenyl having 2-20 carbon atoms, and unsubstituted alkenyl having 6-30 carbon atoms. The aryl group of the molecule, the unsubstituted heteroaryl group having 3-30 carbon atoms, and any one of the following groups substituted by one or more groups selected from halogen, nitroso, nitro, acyl, carbonyl, carboxylic acid, ester, cyano, isocyano, SCN, OCN, SF5, borane, sulfinyl, sulfonyl and phosphoxy: alkyl having 1-20 carbon atoms, cycloalkyl having 3-20 cyclic carbon atoms, alkoxy having 1-20 carbon atoms, alkenyl having 2-20 carbon atoms, aryl having 6-30 carbon atoms, heteroaryl having 3-30 carbon atoms, and combinations thereof.

[0177] According to one embodiment of the present invention, wherein R1, R2, and R3, each time they appear, are selected from the group consisting of: hydrogen, deuterium, methyl, isopropyl, NO2, SO2CH3, SCF3, C2F5, OC2F5, OCH3, diphenylmethylsilyl, phenyl, methoxyphenyl, p-methylphenyl, 2,6-diisopropylphenyl, biphenyl, polyfluorophenyl, difluoropyridyl, nitrophenyl, dimethylthiazolyl, vinyl groups substituted with one or more of CN or CF3, and are substituted with... One of the following substituted ethynyl groups from CN or CF3: dimethylphosphoxy, diphenylphosphoxy, F, CF3, OCF3, SF5, SO2CF3, cyano, isocyano, SCN, OCN, trifluoromethylphenyl, trifluoromethoxyphenyl, bis(trifluoromethyl)phenyl, bis(trifluoromethoxy)phenyl, 4-cyanotetrafluorophenyl, phenyl or biphenyl substituted with one or more of F, CN or CF3, tetrafluoropyridyl, pyrimidinyl, triazine, diphenylborane, oxaboxanthracene, and combinations thereof.

[0178] According to one embodiment of the invention, wherein R1 and R2, each time they appear, are selected from the group consisting of: halogen, cyano, substituted or unsubstituted alkyl with 1-20 carbon atoms, substituted or unsubstituted cycloalkyl with 3-20 cyclic carbon atoms, substituted or unsubstituted heteroalkyl with 1-20 carbon atoms, substituted or unsubstituted aryl with 6-30 carbon atoms, substituted or unsubstituted heteroaryl with 3-30 carbon atoms, and combinations thereof.

[0179] According to one embodiment of the present invention, wherein R1 and R2, each time they appear, are selected from the group consisting of: cyano, substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, and combinations thereof.

[0180] According to one embodiment of the present invention, R1 is selected from cyano.

[0181] According to one embodiment of the present invention, wherein R1 and / or R2 are selected from cyano groups.

[0182] According to one embodiment of the present invention, wherein R3 is selected from substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, or combinations thereof.

[0183] According to one embodiment of the present invention, the P-type conductive doped material has a structure represented by formula 1-1, formula 1-2, formula 1-3, formula 1-5, formula 1-13, formula 1-14, formula 1-15, formula 1-21 or formula 1-28.

[0184] According to one embodiment of the present invention, the p-type conductive doped material has a structure represented by Formula 1-1-1:

[0185]

[0186] In each occurrence, Z is selected from O, S, Se, or NR, either identically or differently. N ;

[0187] Z' and Z” are selected from C or N each time they appear, either the same or different.

[0188] Ar a Each time it appears, it is selected from the following groups, either identically or differently: substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, and combinations thereof; and when Ar a When selected from substituted aryl or substituted heteroaryl groups, it has a substituent R. b ;

[0189] R a Each occurrence, whether identical or different, indicates monosubstituted, polysubstituted, or unsubstituted.

[0190] Each time ring E1 appears, it is selected from an aromatic ring having 6-30 carbon atoms or a heteroaromatic ring having 3-30 carbon atoms, either the same or different.

[0191] R1, R2, R a R b R NEach time it appears, it is selected from the group consisting of the following groups, either identically or differently: hydrogen, deuterium, hydroxyl, mercapto, halogen, nitrosyl, nitro, acyl, carbonyl, carboxylic acid, ester, cyano, isocyanate, SCN, OCN, SF5, borane, sulfinyl, sulfonyl, phospho, substituted or unsubstituted alkyl with 1-20 carbon atoms, substituted or unsubstituted cycloalkyl with 3-20 ring carbon atoms, substituted or unsubstituted heteroalkyl with 1-20 carbon atoms, substituted or unsubstituted heterocyclic with 3-20 ring atoms, substituted or unsubstituted aralkyl with 7-30 carbon atoms, substituted or unsubstituted alkoxy with 1-20 carbon atoms, etc. The following are substituted or unsubstituted aryloxy groups having 6-30 carbon atoms, substituted or unsubstituted alkenyl groups having 2-20 carbon atoms, substituted or unsubstituted alkynyl groups having 2-20 carbon atoms, substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, substituted or unsubstituted alksilyl groups having 3-20 carbon atoms, substituted or unsubstituted arylsilyl groups having 6-20 carbon atoms, substituted or unsubstituted alkylgermanium groups having 3-20 carbon atoms, substituted or unsubstituted arylgermanium groups having 6-20 carbon atoms, substituted or unsubstituted amino groups having 0-20 carbon atoms, and combinations thereof.

[0192] Adjacent substituents R1, R2, R a R b They can be arbitrarily connected to form a ring.

[0193] In this embodiment, in formula 1-1-1, Z” and Z’ are directly connected by a chemical bond, that is, Ar a Connect to the adjacent position of Z'.

[0194] In this paper, adjacent substituents R1, R2, R a R b They can optionally be linked to form a ring, intended to represent adjacent substituent groups, such as adjacent substituent R1, adjacent substituent R2, adjacent substituents R1 and R2, and adjacent substituent R a and R b Any one or more of these adjacent substituent groups can connect to form a ring. Obviously, these adjacent substituent groups can also remain unconnected to form a ring.

[0195] According to one embodiment of the present invention, R1, R2, R a R b At least one of them, each time appearing, is selected from groups containing at least one electron-withdrawing group, either identically or differently.

[0196] According to one embodiment of the present invention, the P-type conductive doped material has a structure represented by formula 1-1-1A or formula 1-1-1B:

[0197]

[0198] In each occurrence, Z is selected from O, S, Se, or NR, either identically or differently. N ;

[0199] Z' and Z” are selected from C or N each time they appear, either the same or different.

[0200] Ar a Each time it appears, it is selected from the following groups, either identically or differently: substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, and combinations thereof; and when Ar a When selected from substituted aryl or substituted heteroaryl groups, it has a substituent R. b ;

[0201] R a Each occurrence, whether identical or different, indicates monosubstituted, polysubstituted, or unsubstituted.

[0202] Each time ring E1 appears, it is selected from an aromatic ring having 6-30 carbon atoms or a heteroaromatic ring having 3-30 carbon atoms, either the same or different.

[0203] R1, R2, R a R b R NEach time it appears, it is selected from the group consisting of the following groups, either identically or differently: hydrogen, deuterium, hydroxyl, mercapto, halogen, nitrosyl, nitro, acyl, carbonyl, carboxylic acid, ester, cyano, isocyanate, SCN, OCN, SF5, borane, sulfinyl, sulfonyl, phospho, substituted or unsubstituted alkyl with 1-20 carbon atoms, substituted or unsubstituted cycloalkyl with 3-20 ring carbon atoms, substituted or unsubstituted heteroalkyl with 1-20 carbon atoms, substituted or unsubstituted heterocyclic with 3-20 ring atoms, substituted or unsubstituted aralkyl with 7-30 carbon atoms, substituted or unsubstituted alkoxy with 1-20 carbon atoms, etc. The following are substituted or unsubstituted aryloxy groups having 6-30 carbon atoms, substituted or unsubstituted alkenyl groups having 2-20 carbon atoms, substituted or unsubstituted alkynyl groups having 2-20 carbon atoms, substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, substituted or unsubstituted alksilyl groups having 3-20 carbon atoms, substituted or unsubstituted arylsilyl groups having 6-20 carbon atoms, substituted or unsubstituted alkylgermanium groups having 3-20 carbon atoms, substituted or unsubstituted arylgermanium groups having 6-20 carbon atoms, substituted or unsubstituted amino groups having 0-20 carbon atoms, and combinations thereof.

[0204] Adjacent substituents R1, R2, R a R b They can be arbitrarily connected to form a ring.

[0205] According to one embodiment of the present invention, R1 and R2 are selected from the group consisting of the same or different each time they appear: halogen, cyano, SCN, substituted or unsubstituted alkyl having 1-20 carbon atoms, substituted or unsubstituted aryl having 6-30 carbon atoms, substituted or unsubstituted heteroaryl having 3-30 carbon atoms, and combinations thereof.

[0206] According to one embodiment of the present invention, R1 and R2 are selected from the group consisting of fluorine, cyano, SCN, trifluoromethyl, 2,3,5,6-tetrafluoro-4-cyanophenyl, 2,3,5,6-tetrafluoropyridyl, cyanophenyl, fluorophenyl, and combinations thereof, each time they appear.

[0207] According to one embodiment of the present invention, wherein the ring E1 is selected, in the same or different ways, from an aromatic ring having 6-20 carbon atoms or a heteroaromatic ring having 3-20 carbon atoms each time it appears.

[0208] According to one embodiment of the present invention, the ring E1 is selected from an aromatic ring having 6-10 carbon atoms or a heteroaromatic ring having 3-10 carbon atoms each time it appears.

[0209] According to one embodiment of the present invention, the P-type conductive doped material has a structure represented by any one of Formula 1-1-1C to Formula 1-1-1L:

[0210]

[0211]

[0212] In this case, Z is selected from O, S, or Se each time it appears, either the same or different.

[0213] X1-X5 are selected from N or CR each time they appear, either identically or differently. a ;

[0214] Z1 is selected from O, S, Se, or NR each time it appears, either identically or differently. N1 ;

[0215] Ar a Each time it appears, it is selected from the group consisting of: substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, and combinations thereof; and when Ar a When selected from substituted aryl groups having 6-30 carbon atoms or substituted heteroaryl groups having 3-30 carbon atoms, the aryl or heteroaryl group is substituted with one or more R... b replace;

[0216] Each time ring E1 appears, it is selected from an aromatic ring having 6-30 carbon atoms or a heteroaromatic ring having 3-30 carbon atoms, either the same or different.

[0217] R a R b R N1Each time it appears, it is selected from the group consisting of the following groups, either identically or differently: hydrogen, deuterium, hydroxyl, mercapto, halogen, nitrosyl, nitro, acyl, carbonyl, carboxylic acid, ester, cyano, isocyanate, SCN, OCN, SF5, borane, sulfinyl, sulfonyl, phospho, substituted or unsubstituted alkyl with 1-20 carbon atoms, substituted or unsubstituted cycloalkyl with 3-20 ring carbon atoms, substituted or unsubstituted heteroalkyl with 1-20 carbon atoms, substituted or unsubstituted heterocyclic with 3-20 ring atoms, substituted or unsubstituted aralkyl with 7-30 carbon atoms, substituted or unsubstituted alkoxy with 1-20 carbon atoms, etc. The following are substituted or unsubstituted aryloxy groups having 6-30 carbon atoms, substituted or unsubstituted alkenyl groups having 2-20 carbon atoms, substituted or unsubstituted alkynyl groups having 2-20 carbon atoms, substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, substituted or unsubstituted alksilyl groups having 3-20 carbon atoms, substituted or unsubstituted arylsilyl groups having 6-20 carbon atoms, substituted or unsubstituted alkylgermanium groups having 3-20 carbon atoms, substituted or unsubstituted arylgermanium groups having 6-20 carbon atoms, substituted or unsubstituted amino groups having 0-20 carbon atoms, and combinations thereof.

[0218] Adjacent substituent R a R b R N1 They can be arbitrarily connected to form a ring.

[0219] In this paper, adjacent substituents R a R b They can be optionally linked to form a ring, intended to represent adjacent substituent groups, for example, adjacent substituent R. b Adjacent substituent R a and adjacent substituent R b and R a Any one or more of these adjacent substituent groups can connect to form a ring. Obviously, these adjacent substituent groups can also remain unconnected to form a ring.

[0220] According to one embodiment of the present invention, X1 is selected from CR each time it appears, either the same or different. a .

[0221] According to one embodiment of the present invention, the p-type conductive doped material has a structure represented by formula 1-1-1M:

[0222]

[0223] In this case, Z is selected from O, S, or Se each time it appears, either the same or different.

[0224] X2-X4 are selected from N or CR each time they appear, either identically or differently. a ;

[0225] Ar a Ar b Each time it appears, it is selected from the group consisting of: substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, and combinations thereof; and when Ar a Ar b When selected from substituted aryl groups having 6-30 carbon atoms or substituted heteroaryl groups having 3-30 carbon atoms, the aryl or heteroaryl group is substituted with one or more R... b replace;

[0226] R a R b Each time it appears, it is selected from the group consisting of the same or different groups of the following: hydrogen, deuterium, halogen, hydroxyl, mercapto, nitroso, nitro, acyl, carbonyl, carboxylic acid, ester, cyano, isocyano, SCN, OCN, SF5, boroalkyl, sulfinyl, sulfonyl, phosphoxy, substituted or unsubstituted alkyl having 1-20 carbon atoms, substituted or unsubstituted cycloalkyl having 3-20 cyclic carbon atoms, substituted or unsubstituted heteroalkyl having 1-20 carbon atoms, substituted or unsubstituted alkoxy having 1-20 carbon atoms, substituted or unsubstituted alkenyl having 2-20 carbon atoms, substituted or unsubstituted alkynyl having 2-20 carbon atoms, substituted or unsubstituted aryl having 6-30 carbon atoms, substituted or unsubstituted heteroaryl having 3-30 carbon atoms, and combinations thereof.

[0227] Adjacent substituent R a R b They can be arbitrarily connected to form a ring.

[0228] According to one embodiment of the invention, Z is selected from O or S each time it appears, either the same or different.

[0229] According to one embodiment of the present invention, Z is selected from O.

[0230] According to one embodiment of the present invention, in formulas 1-1-1C to 1-1-1M, at least one of X1 to X5 is selected from CR each time it appears, either identically or differently. a .

[0231] According to one embodiment of the present invention, in formulas 1-1-1C to 1-1-1M, at least one of X1 to X5 is selected from N.

[0232] According to one embodiment of the present invention, in formulas 1-1-1C to 1-1-1M, at least two of X1 to X5 are selected from N.

[0233] According to one embodiment of the present invention, in formulas 1-1-1C to 1-1-1M, two of X1 to X5 are selected from N.

[0234] According to one embodiment of the present invention, wherein the R a and R b Each time it appears, it is selected from the group consisting of the same or different groups of the following: hydrogen, deuterium, halogen, cyano, isocyano, SCN, OCN, SF5, boroalkyl, substituted or unsubstituted alkyl having 1-20 carbon atoms, substituted or unsubstituted heteroalkyl having 1-20 carbon atoms, substituted or unsubstituted alkoxy having 1-20 carbon atoms, substituted or unsubstituted aryl having 6-30 carbon atoms, substituted or unsubstituted heteroaryl having 3-30 carbon atoms, and combinations thereof;

[0235] And the R a R b At least one of them, each time appearing, is selected from the group consisting of: halogen, cyano, isocyano, SCN, OCN, SF5, boroalkyl, substituted or unsubstituted alkyl having 1-20 carbon atoms, substituted or unsubstituted heteroalkyl having 1-20 carbon atoms, substituted or unsubstituted alkoxy having 1-20 carbon atoms, substituted or unsubstituted aryl having 6-30 carbon atoms, substituted or unsubstituted heteroaryl having 3-30 carbon atoms, and combinations thereof;

[0236] Adjacent substituent R a R b They can be arbitrarily connected to form a ring.

[0237] According to one embodiment of the present invention, wherein the R a and R b Each time it appears, it is selected from the group consisting of the same or different groups of the following: hydrogen, deuterium, halogen, cyano, isocyano, SCN, OCN, SF5, boroalkyl, substituted or unsubstituted alkyl having 1-20 carbon atoms, substituted or unsubstituted heteroalkyl having 1-20 carbon atoms, substituted or unsubstituted alkoxy having 1-20 carbon atoms, substituted or unsubstituted aryl having 6-30 carbon atoms, substituted or unsubstituted heteroaryl having 3-30 carbon atoms, and combinations thereof;

[0238] And the R a R bAt least one of the following, each time appearing identically or differently, is selected from the group consisting of: fluorine, SF5, cyano, substituted alkyl having 1-20 carbon atoms, substituted heteroalkyl having 1-20 carbon atoms, substituted alkoxy having 1-20 carbon atoms, substituted aryl having 6-30 carbon atoms, substituted heteroaryl having 3-30 carbon atoms, and combinations thereof; and the substituents of the substituted alkyl, substituted heteroalkyl, substituted alkoxy, substituted aryl or substituted heteroaryl contain at least one electron-withdrawing group;

[0239] Adjacent substituent R a R b They can be arbitrarily connected to form a ring.

[0240] According to one embodiment of the present invention, wherein R1 and R2, each time they appear, are selected from the group consisting of: hydrogen, deuterium, halogen, cyano, isocyano, SCN, OCN, SF5, boroalkyl, substituted or unsubstituted alkyl having 1-20 carbon atoms, substituted or unsubstituted heteroalkyl having 1-20 carbon atoms, substituted or unsubstituted alkoxy having 1-20 carbon atoms, substituted or unsubstituted aryl having 6-30 carbon atoms, substituted or unsubstituted heteroaryl having 3-30 carbon atoms, and combinations thereof;

[0241] And the R a R b At least one of them, each time appearing in the same or different manner, is selected from the group consisting of: fluorine, SF5, cyano, substituted alkyl having 1-20 carbon atoms, substituted heteroalkyl having 1-20 carbon atoms, substituted alkoxy having 1-20 carbon atoms, substituted aryl having 6-30 carbon atoms, substituted heteroaryl having 3-30 carbon atoms, and combinations thereof; and the substituents of the substituted alkyl, substituted heteroalkyl, substituted alkoxy, substituted aryl or substituted heteroaryl contain at least one fluorine atom and / or at least one cyano.

[0242] According to one embodiment of the present invention, R a and R b Each time it appears, it is selected from the group consisting of the following, either identically or differently: hydrogen, deuterium, fluorine, cyano, methyl, ethyl, isopropyl, n-propyl, tert-butyl, -CF3, -C2F5, -C3F7, -C4F9, -C5F 11 -C6F 13 -C7F 15 , -OCF3, -OC2F5, -OC3F7, -OC4F9, -OC5F 11 -OC6F 13 -OC7F 15, -SCF3, -SC2F5, -SC3F7, -SC4F9, -SC5F 11 -SC6F 13 -SC7F 15 -SF5, and one or more of the following: fluorine, cyano, methyl, ethyl, isopropyl, n-propyl, tert-butyl, -CF3, -C2F5, -C3F7, -C4F9, -C5F 11 -C6F 13 -C7F 15 , -OCF3, -OC2F5, -OC3F7, -OC4F9, -OC5F 11 -OC6F 13 -OC7F 15 , -SCF3, -SC2F5, -SC3F7, -SC4F9, -SC5F 11 -SC6F 13 -SC7F 15 The group in the group consisting of -SF5 may be substituted with any of the following groups: an aryl group having 6-30 carbon atoms, or a heteroaryl group having 3-30 carbon atoms;

[0243] And the R a R b At least one of them, each time appearing identically or differently, is selected from the group consisting of: fluorine, cyano, -CF3, -C2F5, -C3F7, -C4F9, -C5F 11 -C6F 13 -C7F 15 , -OCF3, -OC2F5, -OC3F7, -OC4F9, -OC5F 11 -OC6F 13 -OC7F 15 , -SCF3, -SC2F5, -SC3F7, -SC4F9, -SC5F 11 -SC6F 13 -SC7F 15 -SF5 and one or more of the following selected from fluorine, cyano, -CF3, -C2F5, -C3F7, -C4F9, -C5F 11 -C6F 13 -C7F 15 , -OCF3, -OC2F5, -OC3F7, -OC4F9, -OC5F 11 -OC6F 13 -OC7F 15 , -SCF3, -SC2F5, -SC3F7, -SC4F9, -SC5F 11 -SC6F13 -SC7F 15 The group in the group consisting of -SF5 may be substituted with any of the following groups: an aryl group having 6-30 carbon atoms, or a heteroaryl group having 3-30 carbon atoms;

[0244] Adjacent substituent R a R b They can be arbitrarily connected to form a ring.

[0245] In this article, -C n F 2n+1 (n is selected from 1 to 20, for example, -C3F7, -C4F9, -C5F) 11 -C6F 13 -C7F 15 The ) indicates a perfluorinated alkyl group having n carbon atoms, including all its possible straight-chain and branched isomers. For example, -C3F7 represents -CF2CF2CF3 and -CF(CF3)CF3; similarly, -OC n F 2n+1 (n is selected from 1 to 20, for example -OC3F7, -OC4F9, -OC5F) 11 -OC6F 13 -OC7F 15 The symbol ) represents a perfluorinated alkoxy group having n carbon atoms, including all its possible straight-chain and branched isomers. For example, -OC3F7 represents -OCF2CF2CF3 and -OCF(CF3)CF3; similarly, -SC n F 2n+1 (n is selected from 1 to 20, for example -SC3F7, -SC4F9, -SC5F) 11 -SC6F 13 -SC7F 15 The ) indicates a perfluorinated alkylthio group having n carbon atoms, including all its possible straight-chain and branched isomers. For example, -SC3F7 represents -SCF2CF2CF3 and -SCF(CF3)CF3. It is obvious to those skilled in the art that -nC n F 2n+1 (For example, -nC3F7, -nC4F9, -nC5F) 11 -nC6F 13 -nC7F 15 The ) indicates a perfluorinated alkyl group with n carbon atoms (straight-chain alkyl), for example, -nC3F7 is only represented as -CF2CF2CF3; similarly, -O-nC n F 2n+1 (e.g., -O-nC3F7, -O-nC4F9, -O-nC5F) 11-O-nC6F 13 -O-nC7F 15 The ) indicates only a perfluorinated substituted n-carbon n-alkoxy group (straight-chain alkoxy group), for example, -O-nC3F7 is only represented as -O-CF2CF2CF3; similarly, -S-nC n F 2n+1 (e.g., -S-nC3F7, -S-nC4F9, -S-nC5F) 11 -S-nC6F 13 -S-nC7F 15 The ) indicates only a perfluorinated n-carbon alkylthio group (straight-chain alkylthio group), for example, -S-nC3F7 is only represented as -S-CF2CF2CF3.

[0246] According to one embodiment of the present invention, R a and R b Each time it appears, it is selected from the group consisting of the following, either identically or differently: hydrogen, deuterium, fluorine, cyano, methyl, ethyl, isopropyl, n-propyl, tert-butyl, -CF3, -C2F5, -C3F7, -C4F9, -C5F 11 -C6F 13 -C7F 15 , -OCF3, -OC2F5, -OC3F7, -OC4F9, -OC5F 11 -OC6F 13 -OC7F 15 , -SCF3, -SC2F5, -SC3F7, -SC4F9, -SC5F 11 -SC6F 13 -SC7F 15 -SF5, and any of the following groups substituted by one or more groups selected from the group consisting of F, OCF3, CN or CF3: phenyl, biphenyl, pyridyl, pyrimidinyl, triazine, oxaboxanthyl, and combinations thereof;

[0247] And R a R b At least one of them, each time appearing identically or differently, is selected from the group consisting of: fluorine, cyano, -CF3, -C2F5, -C3F7, -C4F9, -C5F 11 -C6F 13 -C7F 15 , -OCF3, -OC2F5, -OC3F7, -OC4F9, -OC5F 11 -OC6F 13 -OC7F 15 , -SCF3, -SC2F5, -SC3F7, -SC4F9, -SC5F11 -SC6F 13 -SC7F 15 -SF5, phenyl or biphenyl substituted with one or more of F, OCF3, CN or CF3, pyridyl, pyrimidinyl, triazine, oxaboxanthyl, and combinations thereof;

[0248] Adjacent substituent R a R b They can be arbitrarily connected to form a ring.

[0249] According to one embodiment of the present invention, the P-type conductive doped material is selected from the group consisting of compounds 1-1 to 1-55, compounds 2-1 to 2-11, compounds 3-1 to 3-39, and compounds 4-1 to 4-82.

[0250]

[0251]

[0252]

[0253]

[0254]

[0255]

[0256]

[0257]

[0258]

[0259]

[0260]

[0261]

[0262] According to one embodiment of the present invention, the hydrogen in the structures of compounds 1-1 to 1-55, 2-1 to 2-11, 3-1 to 3-39, and 4-1 to 4-82 can be partially or completely replaced by deuterium.

[0263] According to one embodiment of the present invention, the hole transport material (first hole transport material, second hole transport material or third hole transport material) is selected from the group consisting of: compounds having a triarylamine unit, spirodifluorene compounds, pentanebenzene compounds, oligothiophene compounds, oligophenyl compounds, oligophenylene vinylidene compounds, oligofluorene compounds, porphyrin complexes or metal phthalocyanine complexes.

[0264] According to one embodiment of the present invention, the hole transport material comprises any one or more chemical structural units selected from the group consisting of: triarylamines, carbazole, fluorene, spirodifluorene, thiophene, furan, phenyl, oligomeric phenylene oxide, oligomeric fluorene, and combinations thereof.

[0265] According to one embodiment of the present invention, the hole transport material comprises a monotriarylamine structural unit or a bistriarylamine structural unit.

[0266] According to one embodiment of the present invention, the hole transport material has a structure represented by Formula 2 or Formula 3:

[0267]

[0268] Ar1 to Ar7 are selected, in the same or different ways, from substituted or unsubstituted aryl groups having 6 to 30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3 to 30 carbon atoms, or combinations thereof.

[0269] L is selected from substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, or combinations thereof;

[0270] L1 to L7, each time appearing, are selected from single bonds, substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, or combinations thereof.

[0271] According to one embodiment of the present invention, Formula 2 represents a monoamine compound containing only the one amino N atom shown.

[0272] According to one embodiment of the invention, Ar1 to Ar7, each time appearing, are selected from substituted or unsubstituted phenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted dibenzofuranyl, substituted or unsubstituted dibenzothiophenyl, substituted or unsubstituted dibenzoselenophenyl, substituted or unsubstituted carbazolyl, substituted or unsubstituted phenanthyl, substituted or unsubstituted triphenylene, substituted or unsubstituted pyridyl, substituted or unsubstituted anthrayl, substituted or unsubstituted pyrene, substituted or unsubstituted fluorene, or combinations thereof.

[0273] According to one embodiment of the present invention, Ar1 to Ar3 and their substituents cannot be selected from carbazole groups.

[0274] According to one embodiment of the present invention, Ar1 to Ar7 and their substituents cannot be selected from carbazole groups.

[0275] According to one embodiment of the invention, L is selected, either identically or differently, from substituted or unsubstituted phenylene, substituted or unsubstituted biphenylene, substituted or unsubstituted terphenylene, substituted or unsubstituted naphthylene, substituted or unsubstituted dibenzofuranylene, substituted or unsubstituted dibenzothiopheneylene, substituted or unsubstituted dibenzoselenopheneylene, substituted or unsubstituted carbazolyl, substituted or unsubstituted phenanthylene, substituted or unsubstituted terphenylene, substituted or unsubstituted pyridylene, substituted or unsubstituted anthraceneylene, substituted or unsubstituted pyreneylene, substituted or unsubstituted fluoreneylene, or combinations thereof.

[0276] According to one embodiment of the invention, L1 to L7, each time appearing, are selected from single bonds, substituted or unsubstituted phenylene, substituted or unsubstituted biphenylene, substituted or unsubstituted terphenylene, substituted or unsubstituted naphthylene, substituted or unsubstituted dibenzofuranylene, substituted or unsubstituted dibenzothiopheneylene, substituted or unsubstituted dibenzoselenopheneylene, substituted or unsubstituted carbazolyl, substituted or unsubstituted phenanthylene, substituted or unsubstituted terphenylene, substituted or unsubstituted pyridylene, substituted or unsubstituted anthraceneylene, substituted or unsubstituted pyreneylene, substituted or unsubstituted fluoreneylene, or combinations thereof.

[0277] According to one embodiment of the present invention, the hole transport material has a structure represented by formula 2-1 or formula 3-1:

[0278]

[0279] Wherein, Q is selected from C, Si, or Ge;

[0280] Ar1, Ar2, Ar4, Ar5, Ar6 and Ar7, each time appearing, are selected from substituted or unsubstituted aryl groups having 6 to 30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3 to 30 carbon atoms, or combinations thereof.

[0281] L, L1, L2 and L3, each time appearing, are selected from single bonds, substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, or combinations thereof.

[0282] The same or different occurrences of R each indicate monosubstitution, polysubstitution, or no substitution;

[0283] R, each time appearing, is selected from the group consisting of: hydrogen, deuterium, halogen, substituted or unsubstituted alkyl groups having 1-20 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3-20 cyclic carbon atoms, substituted or unsubstituted heteroalkyl groups having 1-20 carbon atoms, substituted or unsubstituted heterocyclic groups having 3-20 cyclic carbon atoms, substituted or unsubstituted aralkyl groups having 7-30 carbon atoms, substituted or unsubstituted alkoxy groups having 1-20 carbon atoms, substituted or unsubstituted aroxy groups having 6-30 carbon atoms, and substituted or unsubstituted groups having 2-20 carbon atoms. Alkenyl, substituted or unsubstituted alkynyl groups having 2-20 carbon atoms, substituted or unsubstituted aryl groups having 6-30 carbon atoms, substituted or unsubstituted heteroaryl groups having 3-30 carbon atoms, substituted or unsubstituted alkylsilyl groups having 3-20 carbon atoms, substituted or unsubstituted arylsilyl groups having 6-20 carbon atoms, substituted or unsubstituted alkylgermanium groups having 3-20 carbon atoms, substituted or unsubstituted arylgermanium groups having 6-20 carbon atoms, acyl, carbonyl, carboxylic acid, ester, cyano, isocyano, hydroxyl, mercapto, sulfinyl, sulfonyl, phosphinyl, and combinations thereof;

[0284] Dashed lines indicate no bonding or single bonds, and adjacent substituents R can optionally connect to form a ring.

[0285] According to one embodiment of the present invention, the hole transport material is selected from the group consisting of compounds HT-1 to HT-66:

[0286]

[0287]

[0288]

[0289]

[0290] According to one embodiment of the present invention, the hydrogen in the structure of compounds HT-1 to HT-66 can be partially or completely replaced by deuterium.

[0291] According to one embodiment of the present invention, the common P-type charge generation layer and the common hole transport layer are shared by all pixels.

[0292] According to one embodiment of the present invention, the stacked organic electroluminescent device comprises at least one N-type charge generating layer.

[0293] According to one embodiment of the present invention, the N-type charge generation layer is shared by at least two adjacent pixels.

[0294] According to one embodiment of the present invention, the N-type charge generation layer is shared by all pixels.

[0295] According to one embodiment of the present invention, the N-type charge generating layer comprises at least one metal selected from Yb, Li, Na, K, Zn, Cs, Mg, Ca, Sr, Ba, Sm, Eu, or combinations thereof.

[0296] According to one embodiment of the present invention, the metal is selected from Yb, Li, or a combination thereof.

[0297] According to one embodiment of the present invention, the N-type charge-generating layer comprises at least one electron transport material, the electron transport material comprising at least one substituted or unsubstituted heteroaryl group having 3-30 carbon atoms.

[0298] According to one embodiment of the present invention, the electron transport material comprises any one or more chemical structural units selected from the group consisting of: pyridine, pyrimidine, triazine, imidazole, carbazole, cyano, acridine, acridine, phosphooxy, sulfone, sulfoxide, benzoxazole, quinone, benzoquinone, quinoxaline, benzoquinone, phenanthroline, benzoacridine.

[0299] According to one embodiment of the present invention, the N-type charge generation layer comprises at least one electron transport material and at least one metal.

[0300] According to one embodiment of the present invention, the mass ratio of electron transport material to metal in the N-type charge generation layer is 10000:1 to 1:10000.

[0301] According to one embodiment of the present invention, the mass ratio of electron transport material to metal in the N-type charge generation layer is 1000:1 to 1:1000.

[0302] According to one embodiment of the present invention, the mass ratio of electron transport material to metal in the N-type charge generation layer is 100:1 to 1:100.

[0303] According to one embodiment of the present invention, the stacked organic electroluminescent device includes at least two light-emitting units disposed between an anode and a cathode, each light-emitting unit including at least one light-emitting layer.

[0304] According to one embodiment of the present invention, the stacked organic electroluminescent device includes at least three light-emitting units disposed between an anode and a cathode, each light-emitting unit including at least one light-emitting layer.

[0305] According to one embodiment of the present invention, the stacked organic electroluminescent device includes at least four light-emitting units disposed between an anode and a cathode, each light-emitting unit including at least one light-emitting layer.

[0306] According to one embodiment of the present invention, the plurality of pixels are capable of emitting light of the same color or light of different colors.

[0307] According to one embodiment of the present invention, an electronic device is also disclosed, which includes the active-matrix organic electroluminescent display described in the above embodiments.

[0308] Combination with other materials

[0309] The materials described in this invention for specific layers in organic light-emitting devices can be used in combination with a variety of other materials present in the device. These combinations of materials are described in detail in paragraphs 0132-0161 of U.S. Patent Application US2016 / 0359122A1, the entire contents of which are incorporated herein by reference. The materials described or mentioned herein are non-limiting examples of materials that can be used in combination with the compounds disclosed herein, and those skilled in the art can readily consult the literature to identify other materials that can be used in combination.

[0310] Materials described herein for use in specific layers of organic light-emitting devices can be used in combination with a variety of other materials present in said devices. For example, the compounds disclosed herein can be used in combination with a variety of light-emitting dopants, substrates, transport layers, blocking layers, implantation layers, electrodes, and other possible layers. These combinations of materials are described in detail in paragraphs 0080-0101 of U.S. Patent Application US2015 / 0349273A1, the entire contents of which are incorporated herein by reference. The materials described or mentioned herein are non-limiting examples of materials that can be used in combination with the compounds disclosed herein, and those skilled in the art can readily consult the literature to identify other materials that can be used in combination.

[0311] The fabrication method of the organic electroluminescent device is not limited. In the device embodiments, the device characteristics are tested using conventional equipment in the art (including but not limited to evaporation machines manufactured by Angstrom Engineering, optical testing systems and lifetime testing systems manufactured by Suzhou Fushida, ellipsometers manufactured by Beijing Liangtuo, etc.) and methods well known to those skilled in the art. Since those skilled in the art are familiar with the use of the above-mentioned equipment, testing methods, and other related content, and can obtain the inherent data of the sample definitively and unaffected, the above-mentioned related content will not be elaborated further in this patent. The fabrication method of the following device embodiments is merely an example and should not be construed as limiting. Those skilled in the art can make reasonable improvements to the fabrication method of the following device embodiments based on the prior art.

[0312] In this paper, the method for testing the lateral resistance of the relevant film is as follows: under a vacuum of approximately 10... -6 Under Torr conditions, on a test substrate pre-fabricated with ITO interdigitated electrodes, a common P-type charge generation layer (common P-CGL, thickness) is first formed by co-deposition of a first P-type conductive doped material and a first hole transport material. Then, a second hole transport material (or a first hole transport material) is deposited on the common P-type charge generation layer to form a common hole transport layer (common HIL, thickness). The test substrate has 40 ITO pointers, each 0.02 mm wide, forming 39 trench regions. Each trench region is 1.92 mm long, 20 μm wide, and 200 nm high. At room temperature, the test fixture is clamped onto the ITO electrode, and a voltage is applied to measure the current. The voltage range is 3 V to 21 V with a step size of 3 V. The voltage (V)-current (I) data are recorded, and a scatter plot of voltage and current is plotted. A linear fitting method is used to fit the voltage-current line (the horizontal axis is current, and the vertical axis is voltage). The slope of the line is the lateral resistance. The lateral resistance of the relevant film layers is recorded and shown in Table 1.

[0313] Table 1. Resistance data of relevant films.

[0314]

[0315] In this paper, the HOMO energy levels of hole transport materials were obtained by cyclic voltammetry (CV). The CV tests were performed using a CorrTest CS120 electrochemical workstation manufactured by Wuhan CorrTest Instruments Co., Ltd., employing a three-electrode system: a platinum disk electrode as the working electrode, an Ag / AgNO3 electrode as the reference electrode, and a platinum wire electrode as the auxiliary electrode. Anhydrous DCM was used as the solvent, and 0.1 mol / L tetrabutylammonium hexafluorophosphate was used as the supporting electrolyte to prepare a 10... -3 A mol / L solution was used, and nitrogen gas was bubbled into the solution for 10 min to remove oxygen before the test. Instrument parameters were set as follows: scan rate 100 mV / s, potential interval 0.5 mV, and test window -1 V to 1 V. The HOMO energy levels of some of the first and second hole transport materials were measured using the above method, and the energy level difference was calculated. The data are shown in Table 2.

[0316] Table 2 shows the HOMO levels and energy level differences of some hole transport materials.

[0317]

[0318]

[0319] The material structure used in the membrane layer is as follows:

[0320]

[0321] As shown in Tables 1 and 2, the common HIL of comparative example films 1-4 uses the same hole transport material (first hole transport material) as that in the common P-CGL, which is a commonly used film structure in the industry. However, the inventors have discovered that when a second hole transport material with a deeper HOMO level is used in the common HIL, the lateral resistance of the film can be significantly improved, with R1 / R2 generally higher than 1.1. The lateral resistance of the example films 1-4 is more than 1.3 times that of the corresponding comparative example films 1-4, and the lateral resistance of example film 4 is even 4.3 times that of comparative example film 4 (R1 / R2 is 4.3). This results in higher lateral resistance for example films 1-4, which, when used as common layers in active OLED displays, can more significantly suppress lateral crosstalk between pixels in the display.

[0322] The reason may be that when the lateral resistance of the corresponding comparative example film layer is large, the carrier concentration in the film layer is low. Since the common P-CGL and the common HIL use the same hole transport material, there is no barrier difference or the barrier difference is small. The carriers are distributed in a certain amount in both the common P-CGL and the common HIL. When the first hole transport material in the common HIL is replaced with the second hole transport material with a deeper HOMO level, the carrier distribution in the common HIL will be greatly reduced due to the barrier difference between the first hole transport material in the common P-CGL and the second hole transport material in the common HIL. The carrier migration is mainly in the common P-CGL layer, which will lead to a further increase in the lateral resistance of the entire film layer.

[0323] In summary, the common HIL of the films in Examples 1-4 uses a second hole transport material that is different from the first hole transport material in the common P-CGL and has a deeper HOMO energy level, exhibiting high lateral resistance (R1≥15MΩ). Compared to commonly used film structures in the industry, the films in Examples 1-4 have significantly improved lateral resistance (R1 / R2≥1.1). Therefore, when these film layers are used as common layers in active OLED displays, they can obviously suppress lateral current leakage more significantly, thereby suppressing lateral crosstalk between pixels in the display. This is further verified by crosstalk testing.

[0324] Example 1 of crosstalk testing device:

[0325] like Figure 5As shown, a 0.7 mm thick glass substrate was first used, on which two pre-patterned 80 nm thick ITO anodes, 500a and 500b, were formed. After washing the substrate with deionized water and detergent, the anode surfaces were treated with oxygen plasma and UV ozone. Subsequently, the substrate was dried in a glove box to remove moisture and then placed on a support and transferred to a vacuum chamber. The organic layer specified below was applied at a vacuum degree of approximately 10... -6 Under the condition of Turbo, the anode layer is sequentially deposited by vacuum thermal evaporation at a rate of 0.1-10 Å / s. First, the first light-emitting unit is deposited, including: the evaporation of compound HT-11 as a hole transport layer 501 (HTL, The vapor-deposited compound HT-B is used as the electron blocking layer 502 (EBL). Simultaneously, compounds H-1 and BD-1 are vapor-deposited to form two independent blue light-emitting layers, 503a and 503b (EML, weight ratio 96:4). ), the vapor-deposited compound HB is used as a hole-blocking layer 504 (HBL, ), the vapor-deposited compounds ET and Liq were co-deposited as electron transport 505 (ETL, weight ratio 2:3, Subsequently, vapor-deposited metallic Yb and compound ET-2 were used as the N-type charge-generating layer 506a (N-CGL, weight ratio 1:99). ), vapor-deposited compounds 1-28 and HT-21 were used as the P-type charge generation layer 506b (P-CGL, weight ratio 14:86), Next, a second light-emitting unit is deposited, including: depositing compound HT-23 as a hole transport layer 507 (HTL). The vapor-deposited compound HT-B is used as the electron blocking layer 508 (EBL). Simultaneously, compounds H-1 and BD-1 are vapor-deposited to form two independent blue light-emitting layers, 509a and 509b (EML, weight ratio 96:4). ), the vapor-deposited compound HB is used as a hole-blocking layer 510 (HBL, ), the vapor-deposited compounds ET and Liq were co-deposited as electron transport 511 (ETL, weight ratio 2:3, ), vapor deposition Thick Liq layers were used as electron injection layers 512 (EIL), and vapor-deposited metallic Al was used as cathodes 513a and 513b. The device is then transferred back to the glove box and sealed with a glass cover to complete the device.

[0326] Comparative Example 1 of Crosstalk Test Device: The preparation method is the same as that of Example 1 of Crosstalk Test Device, except that compound HT-21 is used instead of compound HT-23 as the hole transport layer 507 (HTL). ).

[0327] The material structure used in the crosstalk testing device is as follows:

[0328]

[0329]

[0330] like Figure 5 As shown, the crosstalk testing device includes pixels 5A and 5B. Anode 500a and cathode 513b are electrically connected to the driving device. The luminous intensity (cd / m²) of pixel 5B is tested under a constant voltage of 21V. 2 The data is recorded and displayed in Table 3.

[0331] Table 3. Luminous intensity of pixel 5B of the crosstalk test device.

[0332]

[0333] In Example 1 of the crosstalk testing device, the common P-CGL of pixels 5A and 5B is composed of a first P-type conductive doped material and a first hole transport material, while the common HTL is composed of a second hole transport material. That is, the hole transport materials used in the common P-CGL and common HTL are different. As shown in Table 3, Example 1 of the crosstalk testing device has a high lateral resistance (36MΩ), and at a constant voltage of 21V, the measured luminance of pixel 5B is 0 cd / m². 2 This indicates that in Example 1 of the crosstalk testing device, holes have difficulty migrating from pixel 5A to pixel 5B via the common P-CGL and common HTL, so pixel 5B does not emit light, indicating that the crosstalk between the two pixels is very small or even non-existent. In contrast, in Comparative Example 1 of the crosstalk testing device, the hole transport materials used in the common P-CGL and common HTL of pixels 5A and 5B are the same, which is a commonly used film structure in the industry. As shown in Table 3, Comparative Example 1 of the crosstalk testing device has a smaller lateral resistance (12MΩ), which is less than that of Example 1 of the crosstalk testing device. At a constant voltage of 21V, the measured luminance of pixel 5B in Comparative Example 1 of the crosstalk testing device is 0.8 cd / m². 2 The fact that pixel 5B emits light and has relatively high brightness indicates significant lateral crosstalk between the two pixels. The above data analysis shows that, due to the higher lateral resistance of the common P-CGL layer and common HTL of this invention, their application in active OLED displays can more effectively suppress lateral crosstalk between pixels.

[0334] Furthermore, applying the common P-CGL layer and common HTL of this invention to an active-matrix OLED display effectively suppresses inter-pixel lateral crosstalk while also enabling the device to achieve excellent device performance. Device embodiments and their data are provided below to illustrate this.

[0335] Device Examples

[0336] Example 1:

[0337] like Figure 3 As shown, a 0.7 mm thick glass substrate was first used, on which two pre-patterned 80 nm thick ITO anodes 310 were placed. The substrate was washed with deionized water and detergent, and then the anode surfaces were treated with oxygen plasma and UV ozone. Subsequently, the substrate was dried in a glove box to remove moisture and then placed on a support and transferred to a vacuum chamber. The organic layer specified below was applied at a vacuum degree of approximately 10... -6 Under the condition of Turbo evaporation, the anode layer 310 is sequentially deposited by vacuum thermal evaporation at a rate of 0.1-10 Å / s. First, the first light-emitting unit 330a is deposited, including: simultaneously depositing compound PD-1 and compound HT-11 as a hole injection layer 331a (HIL, weight ratio 3:97). ), the vapor-deposited compound HT-11 is used as the hole transport layer 332a (HTL, ), HT-B compound was vapor-deposited as an electron blocking layer 333a (EBL, Simultaneously, compounds H-1 and BD-1 were vapor-deposited as blue light-emitting layer 334a (EML, weight ratio 96:4). ), vapor-deposited compound HB is used as a hole-blocking layer 335a(HBL, ), evaporation compounds ET and Liq were co-deposited as electron transport layer 336a (ETL, weight ratio 40:60, ), Subsequently, vapor-deposited metallic Yb and compound ET-2 were used as N-type charge-generating layer 340a (N-CGL, weight ratio 1:99). ), vapor-deposited compounds 1-20 and HT-11 were used as the P-type charge generation layer 340b (P-CGL, weight ratio 20:80), Following this, a second light-emitting unit 330b is deposited, including: depositing compound HT-13 as a hole transport layer 331b (HTL, The vapor-deposited compound HT-B is used as the electron blocking layer 332b (EBL). Simultaneously, compounds H-1 and BD-1 were deposited as blue light emitting layer 333b (EML, weight ratio 96:4). ), vapor-deposited compound HB is used as a hole-blocking layer 334b(HBL, ), evaporation compounds ET and Liq were co-deposited as the electron transport layer 335b (ETL, weight ratio 40:60, ), vapor deposition Thick Liq was used as the electron injection layer 336b (EIL), and evaporated Al was used as the cathode 320 (Cathode). The device is then transferred back to the glove box and sealed with a glass cover to complete the device.

[0338] Example 2: The preparation method is the same as in Example 1, except that the weight ratio of compound 1-20 and compound HT-11 in the P-type charge generation layer 340b is adjusted to 14:86, and compound HT-23 is deposited as the hole transport layer 331b (HTL). ).

[0339] Example 3: The preparation method was the same as in Example 2, except that compounds 1-28 and HT-21 were vapor-deposited as the P-type charge generation layer 340b (P-CGL, weight ratio 14:86). ).

[0340] Example 4: The preparation method is the same as in Example 1, except that compounds 1-32 and HT-61 are vapor-deposited as the P-type charge generation layer 340b (P-CGL, weight ratio 20:80). ).

[0341] Comparative Example 1: The preparation method was the same as in Example 2, except that the vapor-deposited compound HT-11 was used as the hole transport layer 331b (HTL). ).

[0342] Comparative Example 2: The preparation method was the same as in Example 3, except that the vapor-deposited compound HT-21 was used as the hole transport layer 331b (HTL). ).

[0343] The structure and thickness of some device layers are shown in Table 4. Layers using more than one material are obtained by doping different compounds in the weight ratios specified herein.

[0344] Table 4. Partial device structures of Examples 1-4 and Comparative Examples 1-2

[0345]

[0346]

[0347] The material structure used in the device is shown below:

[0348]

[0349]

[0350] Table 5 summarizes the device performance of Examples 1-4 and Comparative Examples 1-2. Voltage efficiency, current efficiency (CE), power efficiency (PE), and external quantum efficiency (EQE) are measured at a constant current density of 10 mA / cm². 2 The following measurements were taken.

[0351] Table 5 Device Data

[0352] Example 1 7.9 11 4 15 Example 2 7.8 10 4 14 Example 3 7.9 11 4 15 Example 4 7.9 11 4 15 Comparative Example 1 7.8 10 4 14 Comparative Example 2 7.8 11 5 15

[0353] discuss:

[0354] In the stacked OLEDs of Comparative Examples 1-2, a first P-type conductive doped material and a first hole transport material are used as the P-type charge generation layer 340b, and a first hole transport material is used as the hole transport layer 331b. That is, the hole transport material used in the P-type charge generation layer 340b and the hole transport layer 331b is the same, which is a commonly used device structure in the industry. In contrast, the hole transport materials used in the P-type charge generation layer 340b and the hole transport layer 331b of Embodiments 1-4 of the present invention are different. As described above, the film layers of the embodiments of the present invention have significantly improved lateral resistance. When the film layers of the embodiments are used in active OLED displays, lateral current leakage can be suppressed more significantly, thereby suppressing lateral crosstalk between pixels in the display. Meanwhile, as shown in Table 5, the device performance of Comparative Examples 1-2 is already at a very high level, with very low device voltage and very high device efficiency (CE, PE, EQE). Compared with Comparative Examples 1-2, Examples 1-4 have essentially the same low voltage and high efficiency (CE, PE, EQE), maintaining excellent device performance. More importantly, the only difference between Example 2 and Comparative Example 1, and between Example 3 and Comparative Example 2, is the hole transport material used in the hole transport layer 331b. In Examples 2 and 3, while the lateral resistance of the relevant film layers is significantly increased, the device voltage is not increased or only slightly increased, maintaining a low voltage level essentially equivalent to that of the comparative examples. This indicates that the active matrix organic electroluminescent display of the present invention can maintain a basically unchanged device voltage while increasing the lateral resistance, which is very rare.

[0355] In summary, the active-matrix organic electroluminescent display of the present invention has a specific common P-type charge generation layer and a common hole transport layer, and has significantly improved lateral resistance, thereby significantly suppressing lateral crosstalk between pixels in the display. At the same time, it has excellent device performance with low voltage and high efficiency, and has broad commercial application prospects.

[0356] It should be understood that the various embodiments described herein are merely examples and are not intended to limit the scope of the invention. Therefore, as will be apparent to those skilled in the art, the claimed invention may include variations of the specific embodiments and preferred embodiments described herein. Many of the materials and structures described herein can be substituted with other materials and structures without departing from the spirit of the invention. It should be understood that various theories regarding why the invention works are not intended to be limiting.

Claims

1. An active-matrix organic electroluminescent display comprising a plurality of pixels; Each of the plurality of pixels contains at least one stacked organic electroluminescent device; The stacked organic electroluminescent device includes an anode, a cathode, at least one common P-type charge generation layer disposed between the anode and the cathode, and a common hole transport layer disposed between the common P-type charge generation layer and the cathode and in direct contact with the common P-type charge generation layer. in, The common P-type charge generation layer and the common hole transport layer are shared by at least two adjacent pixels; The common P-type charge generation layer comprises a first P-type conductive doped material and a first hole transport material. The common hole transport layer includes a second hole transport material; The first hole transport material is different from the second hole transport material; The HOMO level of the first hole transport material is HOMO1, and the HOMO level of the second hole transport material is HOMO2, where HOMO1–HOMO2 > 0 eV. The common P-type charge generation layer and the common hole transport layer simultaneously satisfy the following two conditions: (1) The transverse resistance of film layer A, which is composed of the common P-type charge generation layer and the common hole transport layer, measured by interdigitated electrodes is R1, and R1≥15MΩ. (2) R1 / R2≥1.1, where R2 is the transverse resistance of film B measured by interdigitated electrodes. Film B is the same as film A, except that the second hole transport material in the common hole transport layer of film A is replaced by the first hole transport material.

2. The active-matrix organic electroluminescent display as described in claim 1, wherein, The R1 ≥ 18 MΩ; Preferably, R1 ≥ 20 MΩ; More preferably, R1 ≥ 22 MΩ.

3. The active-matrix organic electroluminescent display as described in claim 1, wherein, The R1 / R2 ≥ 1.2; Preferably, R1 / R2 ≥ 1.

3.

4. The active-matrix organic electroluminescent display as described in claim 1, wherein, The HOMO1–HOMO2 ≥ 0.05 eV; Preferably, the HOMO1–HOMO2 ≥ 0.10 eV.

5. The active-matrix organic electroluminescent display as described in claim 1, wherein, At 10mA / cm 2 Under a constant current density, the voltage of the stacked organic electroluminescent device is less than or equal to 8.6V; Preferably, at 10 mA / cm 2 Under a constant current density, the voltage of the stacked organic electroluminescent device is less than or equal to 8.4V; More preferably, at 10 mA / cm 2 Under a constant current density, the voltage of the stacked organic electroluminescent device is less than or equal to 8.2V; Most preferably, at 10 mA / cm 2 At a constant current density, the voltage of the stacked organic electroluminescent device is less than or equal to 8.0V.

6. The active-matrix organic electroluminescent display as described in claim 1, wherein, The thickness of the common hole transport layer is greater than or equal to 20 nm; Preferably, the thickness of the common hole transport layer is greater than or equal to 40 nm; More preferably, the thickness of the common hole transport layer is greater than or equal to 60 nm; Most preferably, the thickness of the common hole transport layer is greater than or equal to 80 nm.

7. The active-matrix organic electroluminescent display as described in claim 1, wherein, The LUMO energy level of the first P-type conductive doped material is LUMO1, -5.30eV≤LUMO1≤-4.8eV; Preferably, -5.20eV ≤ LUMO1 ≤ -4.9eV; More preferably, -5.15eV ≤ LUMO1 ≤ -4.95eV; The most preferred value is -5.13eV≤LUMO1≤-4.95eV.

8. The active-matrix organic electroluminescent display as described in claim 1, wherein, The LUMO level of the first P-type conductive doped material is LUMO1, the HOMO level of the first hole transport material is HOMO1, and LUMO1-HOMO1≥0eV. Preferably, LUMO1-HOMO1 ≥ 0.02 eV; More preferably, LUMO1-HOMO1 ≥ 0.04 eV; The most preferred value is LUMO1-HOMO1≥0.06eV.

9. The active-matrix organic electroluminescent display as described in claim 1, wherein, The mass doping ratio of the first P-type conductive doped material in the common P-type charge generation layer is greater than or equal to 7%. Preferably, the mass doping ratio of the first P-type conductive doped material in the common P-type charge generation layer is greater than or equal to 8%. More preferably, the mass doping ratio of the first P-type conductive doped material in the common P-type charge generation layer is greater than or equal to 9%; Most preferably, the mass doping ratio of the first P-type conductive doped material in the common P-type charge generation layer is greater than or equal to 10%.

10. The active-matrix organic electroluminescent display as claimed in claim 1, wherein, The P-type conductive doped material is selected from the following compounds: quinones or quinone derivatives, axialene compounds, dehydrobenzoxazoles and dehydrobenzothiazoles, bisoxazoles or bisthiazoles, metal oxides, and metal sulfides.

11. The active-matrix organic electroluminescent display as claimed in claim 1, wherein, The hole transport material comprises any one or more chemical structural units selected from the group consisting of: triarylamines, carbazole, fluorene, spirodifluorene, thiophene, furan, phenyl, oligomeric phenylene oxide, oligomeric fluorene, and combinations thereof; Preferably, the hole transport material is a monotriarylamine compound or a bistriarylamine compound.

12. An electronic device comprising an active-matrix organic electroluminescent display according to any one of claims 1-11.

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