Display panel, preparation method thereof and display device

Abstract

The application discloses a display panel, a preparation method thereof and a display device. The display panel comprises a substrate, a light emitting device layer comprising at least one light emitting device, the light emitting device being configured to emit first color light in a direction away from the substrate under the driving of a pixel driving circuit, an encapsulation layer arranged on a side surface of the light emitting device layer away from the substrate, wherein the encapsulation layer comprises at least a first encapsulation layer, a second encapsulation layer and a third encapsulation layer in a direction perpendicular to the substrate, the second encapsulation layer being formed by an initiated chemical vapor deposition process, and a light conversion layer arranged on a side surface of the encapsulation layer away from the substrate, the light conversion layer comprising at least one color conversion unit, the at least one color conversion unit comprising a first color conversion unit, the first color conversion unit being configured to convert the first color light into second color light. The application can reduce the thickness of the display panel and improve the problem of light crosstalk.

Description

Technical Field

[0001] This invention relates to the field of displays, and in particular to a display panel, a method for manufacturing the same, and a display device. Background Technology

[0002] In recent years, with the development and widespread adoption of display technology, display panels have been applied to various electronic devices, such as mobile phones, tablets, or other portable electronic devices.

[0003] However, the inventors of this application have discovered that the thickness of the current display panel still needs to be further reduced. Summary of the Invention

[0004] This application provides a display panel and its manufacturing method, as well as a display device, which can reduce the thickness of the display panel and improve the problem of optical crosstalk.

[0005] A first aspect of this application provides a display panel, the display panel comprising:

[0006] A substrate includes a substrate and a driving layer disposed on the substrate, the driving layer including a pixel driving circuit.

[0007] A light-emitting device layer is disposed on the side of the driving layer away from the substrate and includes at least one light-emitting device. The light-emitting device is electrically connected to the pixel driving circuit and is configured to emit a first color light in a direction away from the substrate under the drive of the pixel driving circuit.

[0008] An encapsulation layer is disposed on the surface of the light-emitting device layer away from the substrate; wherein the encapsulation layer includes at least a first encapsulation layer, a second encapsulation layer and a third encapsulation layer along a direction perpendicular to the substrate, and the second encapsulation layer is formed by an initiation chemical vapor deposition process;

[0009] A light conversion layer is disposed on the surface of the encapsulation layer away from the substrate. The light conversion layer includes at least one color conversion unit, and the at least one color conversion unit includes a first color conversion unit configured to convert the first color light into a second color light.

[0010] Wherein, the distance between the two opposite surfaces of the second encapsulation layer is less than 6 μm;

[0011] Preferably, the distance between the two opposing surfaces of the second encapsulation layer is 0.5 μm.

[0012] The material of the second encapsulation layer includes tert-butyl peroxide;

[0013] Furthermore, the material of the second encapsulation layer also includes at least one of isopropylacrylamide, trivinyltrimethyl ester, dioxane, and perfluorododecyl acrylate.

[0014] The materials of the first encapsulation layer and the third encapsulation layer include inorganic materials;

[0015] Preferably, the material of the first encapsulation layer / the third encapsulation layer includes at least one of silicon nitride, silicon oxide, and silicon oxynitride;

[0016] Preferably, the first encapsulation layer and the third encapsulation layer are formed using a chemical vapor deposition process;

[0017] Preferably, the distance between the two opposing surfaces of the first encapsulation layer and the third encapsulation layer is less than 3 micrometers.

[0018] The light-emitting device includes a first electrode, an organic layer, and a second electrode sequentially stacked in a direction away from the substrate, wherein the distance between the two opposing surfaces of the second electrode ranges from [missing information].

[0019] Preferably, the light-emitting device further includes a capping layer located on the side of the second electrode facing away from the substrate, and the distance between the two opposing surfaces of the capping layer ranges from [missing information].

[0020]

[0021] Preferably, the refractive index of the capping layer is in the range of 1.5 to 2.

[0022] The color conversion unit includes quantum dot material, the first color light is blue light, and the second color light is red light or green light;

[0023] Preferably, the light conversion layer further includes a light-transmitting unit configured to transmit blue light emitted by the light-emitting device;

[0024] Preferably, the light conversion layer further includes a black matrix, wherein the black matrix is ​​disposed between two adjacent color conversion units, and / or, a black matrix is ​​disposed between the color conversion unit and the light transmission unit.

[0025] The display panel further includes:

[0026] A filter layer is disposed on the side of the light conversion layer opposite to the substrate, and includes at least one filter block, wherein the at least one filter block includes a first filter block, and the orthographic projection of the first filter block on the substrate at least partially overlaps with the orthographic projection of the first color conversion unit on the substrate;

[0027] Preferably, the display panel further includes a cover plate disposed on the side of the filter layer opposite to the substrate.

[0028] A second aspect of this application provides a method for manufacturing a display panel, the method comprising:

[0029] A light-emitting device layer is formed on a substrate, the light-emitting device layer including at least one light-emitting device, the light-emitting device being configured to emit a first color light in a direction away from the substrate;

[0030] A first encapsulation layer is formed on the side of the light-emitting device layer opposite to the substrate;

[0031] A second encapsulation layer is formed on the side of the first encapsulation layer away from the substrate using an initiation-based chemical vapor deposition process.

[0032] A third encapsulation layer is formed on the side of the second encapsulation layer that is away from the substrate;

[0033] A light conversion layer is formed on the side of the third encapsulation layer opposite to the substrate. The light conversion layer includes at least one color conversion unit, and the at least one color conversion unit includes a first color conversion unit configured to convert the first color light into a second color light.

[0034] The step of forming a second encapsulation layer on the side of the first encapsulation layer away from the substrate using an initiation-based chemical vapor deposition process includes:

[0035] The initiator and monomer are introduced into a vacuum chamber for vapor deposition to obtain the second encapsulation layer;

[0036] The initiator includes tert-butyl peroxide, and the monomer includes at least one of isopropylacrylamide, trivinyltrimethyl ester, dioxane, and perfluorododecyl acrylate.

[0037] A third aspect of this application provides a display device including a display panel of any of the above-mentioned methods, or a display panel prepared by any of the above-mentioned methods.

[0038] The beneficial effects are: This application uses iCVD technology (Initiated Chemical Vapor Deposition) to make the second encapsulation layer instead of the traditional IJP technology, which can significantly reduce the overall film thickness of the encapsulation layer, thereby effectively improving the problem of light crosstalk in the display panel. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort, wherein:

[0040] Figure 1 This is a schematic diagram of one embodiment of a display panel in related technologies;

[0041] Figure 2 This is a schematic diagram of the structure of one embodiment of the display panel of this application;

[0042] Figure 3 This is a schematic diagram of another embodiment of the display panel of this application;

[0043] Figure 4 This is a schematic diagram of the structure of one embodiment of the light-emitting device of this application;

[0044] Figure 5 This is a comparison diagram of the light emission effect of the display panel in this application and the light emission effect of the display panel in the prior art;

[0045] Figure 6 This is a flowchart illustrating one embodiment of the method for manufacturing the display panel of this application. Detailed Implementation

[0046] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0047] It should be noted that the terms "first" and "second" in this application are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0048] Currently, due to the inherent high color purity and continuously tunable spectrum of quantum dot (QD) materials, they have become the most outstanding light-emitting materials of the 21st century. They can significantly improve the color performance of existing liquid crystal displays across the color gamut, leading to widespread research into their display applications in recent years. OLEDs (Organic Light Emitting Diodes) possess characteristics such as self-illumination, ultra-thinness, fast response speed, and wide viewing angle. Blue OLED devices (BOLED) are ideal excitation light sources for quantum dots. Therefore, panels made by combining quantum dot blue OLED devices (QD-BOLED) will simultaneously possess the advantages of both quantum dots and OLEDs, thereby enhancing product performance.

[0049] See Figure 1 Current quantum dot OLED displays typically use a full-surface blue pixel backplane 101, covered by a traditional encapsulation film layer 102. This traditional encapsulation film layer generally consists of three layers: a first film layer 1021, a second film layer 1022, and a third film layer 1023, stacked sequentially in the direction away from the backplane 101. The second film layer 1022 is typically fabricated using inkjet printing (IJP) technology, and its thickness is generally around 12µm. This results in a total thickness of approximately 14µm for the encapsulation film layer 102. This leads to a relatively large overall thickness for current display panels and, at high PPI (>2000ppi), it easily causes crosstalk color mixing between adjacent pixels, thus affecting the display effect.

[0050] To address the aforementioned problems, this application provides a display panel, see reference. Figure 2 The display panel includes a substrate 110, a light-emitting device layer 120, an encapsulation layer 130, and a light conversion layer 140 stacked sequentially. The light-emitting device layer 120 includes a light-emitting device 121.

[0051] Substrate 110 is specifically an array substrate, see reference. Figure 3The substrate 110 includes a substrate 111 and a driving layer 112. The substrate 111 can be a flexible substrate or a rigid substrate. When the substrate 111 is a flexible substrate, its material can be polyimide (PI), or it can be a multilayer structure in which organic and inorganic layers are alternately stacked. For example, the substrate 111 includes an inorganic layer, an organic layer, and an inorganic layer stacked sequentially. In this case, the multilayer structure in which organic and inorganic layers are alternately stacked can take into account both the flexibility and strength of the substrate, so that the display panel has a bendable function and can resist breakage and deformation. When the substrate 111 is a rigid substrate, its material can be glass or metal. This application does not limit the structure of the substrate 111. The driving layer 112 includes a pixel driving circuit 1121, which drives the light-emitting device 121 to emit light. The pixel driving circuit 1121 includes a transistor 11211 and a storage capacitor 11212. The pixel driving circuit 1121 can be, for example, a 2T1C circuit, a 7T1C circuit, a 7T2C circuit, or a 9T1C circuit, etc. This application does not limit its specific structure. "2T1C circuit" refers to a pixel circuit in which the pixel driving circuit 1121 includes two thin-film transistors (T) and one capacitor (C). Other circuits, such as "7T1C circuit," "7T2C circuit," "9T1C circuit," etc., are analogous. In one embodiment, a buffer layer may also be formed between the substrate 111 and the driving layer 112, which is used to prevent impurity elements or ions from diffusing from the substrate 111 to the transistor 11211 or the light-emitting device 121 on the substrate 111, to prevent moisture from penetrating from the substrate 111 to the transistor 11211 or the light-emitting device 121 on the substrate 111, and to planarize the surface of the substrate 111.

[0052] The light-emitting device layer 120 is located on one side of the substrate 110 and includes at least one light-emitting device 121, which is configured to emit a first color light in a direction away from the substrate 110.

[0053] Combination Figure 3 as well as Figure 4 The light-emitting device 121 includes a first electrode 1211, a second electrode 1213, and an organic layer 1212 located between the first electrode 1211 and the second electrode 1213.

[0054] That is, the light-emitting device 121 is an OLED light-emitting device, which can emit light on its own, has good color and high luminous efficiency, fast response speed and low power consumption, and can improve the backlight efficiency.

[0055] In one embodiment, the first electrode 1211 is the anode and the second electrode 1213 is the cathode; in another embodiment, the first electrode 1211 is the cathode and the second electrode 1213 is the anode. The organic layer 1212 in the light-emitting device 121 includes at least one light-emitting layer (EML), and may also include a hole transport layer, an electron transport layer, an electron injection layer, a hole injection layer, and other film layers.

[0056] When the first electrode 1211 is an anode, it can be formed from a material with a high work function to facilitate hole injection. The first electrode 1211 can be a transmission electrode or a reflection electrode. For example, the first electrode 1211 can be formed from indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), aluminum (Al)-doped zinc oxide (AZO), indium oxide (In₂O₃), or tin oxide (SnO₂). The first electrode 1211 can also be formed as a reflection electrode using magnesium (Mg), silver (Ag), Al, aluminum-lithium (Al-Li), calcium (Ca), Ag-ITO, Mg-In, or Mg-Ag. The first electrode 1211 can have a single-layer structure or a multilayer structure with two or more layers. For example, the first electrode 1211 can have a three-layer structure of ITO / Ag / ITO, but it is not limited to this.

[0057] When the second electrode 1213 is a cathode, a metal, alloy, conductive compound, or a mixture of two or more thereof with a low work function can be used as the second electrode 1213. For example, the second electrode 1213 may be used as a transparent electrode or a reflective electrode. When the second electrode 1213 is used as a transparent electrode, it may comprise a thin film formed of Li, Ca, Al, Mg, Mg-In, Mg-Ag, LiF-Al, LiF-Ca, or a compound thereof, and an auxiliary electrode formed thereon of a transparent conductive material such as ITO, IZO, ZnO, or In2O3. Alternatively, when the second electrode 1213 is used as a reflective electrode, it may be formed of Li, Ca, Al, Mg, Mg-In, Mg-Ag, LiF-Al, LiF-Ca, or a compound thereof.

[0058] In one embodiment, to improve the light emission of the light-emitting device 121, a capping layer 1214 is also provided on the second electrode 1213. The capping layer 1214 is also called a CPL (Capping layer), which has the characteristics of low refractive index and low absorption coefficient. In the fabrication process, after the capping layer 1214 is deposited on the second electrode 1213, the subsequent encapsulation layer 130 is formed.

[0059] In one embodiment, when there are multiple light-emitting devices 121, the second electrode 1213 and the capping layer 1214 can both be whole film layers.

[0060] In one embodiment, the light-emitting angle of the light-emitting device 121 is narrowed by increasing the thickness of the second electrode 1213, the thickness of the capping layer 1214, and the refractive index of the capping layer 1214. Specifically, the distance between the two opposing surfaces of the second electrode 1213 is set to a range of [missing information]. (That is, the thickness range of the second electrode 1213 is) The distance between the two opposing surfaces of the capping layer 1214 is within the range of (That is, the thickness range of the capping layer 1214 is) The refractive index of the capping layer 1214 is in the range of 1.5 to 2. For example, the thickness of the second electrode 1213 is... or The thickness of the capping layer 1214 is or The refractive index of the capping layer 1214 is 1.5, 1.8, or 2.

[0061] It should be noted that in other implementations, only one or only two of the above three ranges may be satisfied.

[0062] It should be noted that the light-emitting device 121 can be a single-layer device or a multilayer device, and there is no limitation here.

[0063] It should also be noted that the light-emitting device 121 can be an OLED device or other light-emitting devices such as Micro-LED (MicroLight Emitting Diode). This application does not limit the type of light-emitting device 121.

[0064] Continue reading Figure 3 The display panel also includes a pixel definition layer 150, which has a pixel opening. A light-emitting device 121 is formed in the pixel opening. The pixel definition layer 150 is used to define the position of the light-emitting device 121. The area defined by the pixel opening is the light-emitting area of ​​the light-emitting device 121. The cross-sectional shape of the pixel opening in the horizontal direction can be any suitable shape, such as a circle or a square, etc., without limitation. At the same time, the pixel definition layer 150 can be formed of organic materials such as polyimide (PI), polyamide, benzocyclobutene (BCB), acrylic resin or phenolic resin, or inorganic materials such as SiNx.

[0065] Continue reading Figure 2 as well as Figure 3An encapsulation layer 130 is formed on the surface of the light-emitting device layer 120 away from the substrate 110. The encapsulation layer 130 includes at least a first encapsulation layer 131, a second encapsulation layer 132, and a third encapsulation layer 133 sequentially along a direction perpendicular to the substrate 110 (i.e., along the stacking direction). The second encapsulation layer 132 is a film layer fabricated using an initiated chemical vapor deposition (iCVD) process.

[0066] Specifically, the encapsulation layer 130 is used to protect the light-emitting device layer 120 from external water and oxygen intrusion into the light-emitting device layer 120.

[0067] Initiated chemical vapor deposition (iCVD) is a novel, green method for preparing functional polymer thin films. Combining traditional liquid-phase free radical polymerization with chemical vapor deposition, iCVD introduces the initiator and functional monomers required for polymerization into a chamber via vaporization. At a relatively low heating temperature, the initiator is induced to decompose, allowing the monomers to polymerize into a polymer film that is deposited on the substrate. The substrate temperature is controlled within room temperature during deposition, thus preserving its properties. Compared to traditional liquid-phase preparation processes, iCVD produces dense, uniform films with controllable thickness and is suitable for substrates of any material. Compared to high-energy vapor phase methods such as PECVD, it offers milder conditions, more controllable processes, and perfect preservation of desired functional groups. Compared to IJP (inkjet printing) technology, it effectively reduces film thickness.

[0068] In one embodiment, the material of the second encapsulation layer 132 includes tert-butyl peroxide; and the material of the second encapsulation layer 132 further includes at least one of isopropylacrylamide, trivinyltrimethyl ester, dioxane, and perfluorododecyl acrylate.

[0069] Specifically, when the second encapsulation layer 132 is prepared by initiation chemical vapor deposition, the monomer material used includes tert-butyl peroxide, and the monomer material used includes at least one of isopropylacrylamide, trivinyltrimethyl ester, dioxane, and perfluorododecyl acrylate, so that the material of the prepared second encapsulation layer 132 includes tert-butyl peroxide and also includes at least one of isopropylacrylamide, trivinyltrimethyl ester, dioxane, and perfluorododecyl acrylate.

[0070] It should be noted that, apart from tert-butyl peroxide, the material of the second encapsulation layer 132 may include only one of isopropylacrylamide, trivinyltrimethyl acrylate, dioxane, and perfluorododecyl acrylate, or it may include multiple of these materials.

[0071] Continue reading Figure 2The light conversion layer 140 is disposed on the side of the encapsulation layer 130 away from the substrate 110. The light conversion layer 140 includes at least one color conversion unit 40, and the at least one color conversion unit 40 includes a first color conversion unit 141. The first color conversion unit 141 is configured to convert a first color light into a second color light.

[0072] Specifically, the color conversion unit 40 is a photoluminescent unit, which emits a second color light under the laser light of the first color light emitted by the light-emitting device 121.

[0073] In one embodiment, the orthographic projection of the color conversion unit 40 on the substrate 110 overlaps with the orthographic projection of the corresponding light-emitting device 121 to ensure light conversion efficiency. In a specific application scenario, the orthographic projection of the color conversion unit 40 on the substrate 110 completely coincides with the orthographic projection of the corresponding light-emitting device 121.

[0074] In one embodiment, the color conversion unit 40 includes quantum dot material, the first color light emitted by the light-emitting device 121 is blue light, that is, the light-emitting device 121 is a blue light-emitting device, and the first color conversion unit 141 is used to convert the blue light into red light or green light, that is, the second color light is red light or green light. In this case, the display panel is a quantum dot-based display panel.

[0075] See Figure 2 In one embodiment, there are multiple light-emitting devices 121, all of which emit blue light. Meanwhile, the light conversion layer 140 includes a first color conversion unit 141 and a second color conversion unit 142. The first color conversion unit 141 is used to convert blue light into red light to form a red sub-pixel, and the second color conversion unit 142 is used to convert blue light into green light to form a green sub-pixel. That is, the first color conversion unit 141 includes red quantum dot material, and the second color conversion unit 142 includes green quantum dot material.

[0076] Simultaneously, the light conversion layer 140 also includes a light-transmitting unit 43, which is configured to transmit blue light emitted by the light-emitting device 121, thereby forming a blue sub-pixel. Specifically, for the blue sub-pixel, since the light emitted by the light-emitting device 121 itself is blue light, a color conversion unit 40 is not required; instead, a light-transmitting unit 43 is provided. The light-transmitting unit 43 can be an air layer or a transparent material layer. For example, a transparent polymer resin material, such as acrylic, can be used as the transparent material layer. To further improve the light emission efficiency of the blue sub-pixel, reflective particles capable of reflecting blue light to the light-emitting surface can be added to the transparent material layer. In one embodiment, the orthographic projection of the light-transmitting unit 43 on the substrate 110 overlaps with the orthographic projection of the corresponding light-emitting device 121 on the substrate 110. In another embodiment, the orthographic projection of the light-transmitting unit 43 on the substrate 110 completely coincides with the orthographic projection of the corresponding light-emitting device 121 on the substrate 110.

[0077] In one embodiment, the light conversion layer 140 further includes a third color conversion unit (not shown), which can convert a portion of the blue light into yellow light and transmit another portion of the blue light, so that the converted yellow light and the transmitted blue light are mixed to form white light, thereby forming a white sub-pixel.

[0078] Specifically, each light-emitting device 121 is provided with either a color conversion unit 40 or a light-transmitting unit 43 in the light-emitting direction. The first color conversion unit 141 and the corresponding light-emitting device 121 form a red sub-pixel, the second color conversion unit 142 and the corresponding light-emitting device 121 form a green sub-pixel, the light-transmitting unit 43 and the corresponding light-emitting device 121 form a blue sub-pixel, and the third color conversion unit and the corresponding light-emitting device 121 form a white sub-pixel. This realizes RGBW four-color display, which greatly improves the color richness and display brightness, and can produce panels with higher resolution.

[0079] Of course, in other embodiments, the light conversion layer 140 may not include the third color conversion unit, but only include the first color conversion unit 141, the second color conversion unit 142 and the light transmission unit 43 to achieve RGB three-color display.

[0080] Continue reading Figure 2 In one embodiment, the light conversion layer 140 further includes a black matrix 44, which is disposed between two adjacent color conversion units 40, and / or, a black matrix 44 is disposed between the color conversion unit 40 and the light transmission unit 43.

[0081] Specifically, the Black Matrix 44, also known as BM, can be made of black material and has light-absorbing properties, which can prevent light leakage, light crosstalk, and increase contrast.

[0082] Alternatively, a black matrix 44 may be provided only between two adjacent color conversion units 40, while no black matrix 44 may be provided between the color conversion unit 40 and the light-transmitting unit 43; or a black matrix 44 may be provided only between the color conversion unit 40 and the light-transmitting unit 43, while no black matrix 44 may be provided between two adjacent color conversion units 40. Another option is that a black matrix 44 may be provided between two adjacent color conversion units 40, and also between the color conversion unit 40 and the light-transmitting unit 43.

[0083] Continue reading Figure 2 The display panel also includes a light filter layer 160 and a cover plate 170.

[0084] The filter layer 160 is disposed on the side of the light conversion layer 140 away from the substrate 110, and includes at least one filter block 60. The at least one filter block 60 includes a first filter block 161. The orthographic projection of the first filter block 161 on the substrate 110 at least partially overlaps with the orthographic projection of the first color conversion unit 141 on the substrate 110.

[0085] Specifically, the first filter block 161 only allows the second color light to pass through. After the first color conversion unit 141 converts the second color light, the second color light passes through the first filter block and is emitted. Its color purity is improved, which can improve the display quality of the display panel.

[0086] Continue reading Figure 2 When the first color conversion unit 141 is used to convert blue light into red light to form a red sub-pixel, and the second color conversion unit 142 is used to convert blue light into green light to form a green sub-pixel, the first filter block 161 is a red filter block, allowing only red light to pass through. At this time, at least one filter block 60 further includes a second filter block 162 and a third filter block 163. The orthographic projection of the second filter block 162 on the substrate 110 at least partially overlaps with the orthographic projection of the second color conversion unit 142 on the substrate 110. The orthographic projection of the third filter block 163 on the substrate 110 at least partially overlaps with the orthographic projection of the light-transmitting unit 43 on the substrate 110. The second filter block 162 is a green filter block, allowing only green light to pass through, and the third filter block 163 is a blue filter block, allowing only blue light to pass through.

[0087] In one embodiment, see further. Figure 1 The black matrix 44 extends further between two adjacent filter blocks 60.

[0088] It should be noted that in other embodiments, the black matrix 44 may be formed only in the light conversion layer 140, or the black matrix 44 may be formed only in the filter layer 160.

[0089] Continue reading Figure 2 The cover plate 170 is disposed on the side of the filter layer 160 away from the substrate 110. Specifically, it is a transparent cover plate used to protect the display panel and also to ensure the passage of light. The cover plate 170 can be ordinary glass or ultra-thin glass. This application does not impose specific restrictions on its material.

[0090] It should be noted that the display panel of this application may also include some common structures such as a touch layer and a polarizer, which will not be described in detail here.

[0091] In one embodiment, a cover layer (not shown) is further disposed between the light-emitting device layer 120 and the encapsulation layer 130 to further enhance the encapsulation protection of the light-emitting device layer 120. In one embodiment, the cover layer and the second encapsulation layer 132 are fabricated using the same process, namely, initiated chemical vapor deposition (iCVD), to reduce the overall thickness of the display panel. In one embodiment, the thickness of the cover layer is less than 6 micrometers, for example, the thickness of the cover layer is 6 micrometers, 5 micrometers, 4 micrometers, 3 micrometers, 2 micrometers, 1 micrometer, or 0.5 micrometers.

[0092] In one embodiment, the distance between the two opposing surfaces of the second encapsulation layer 132 is less than 6 micrometers, that is, the thickness of the second encapsulation layer 132 is less than 6 μm. For example, the thickness of the second encapsulation layer 132 is 6 μm, 5 μm, 4 μm, 3 μm, 2 μm, 1 μm, or 0.5 μm. This thickness range can prevent the thickness of the second encapsulation layer 132 from being too large and affecting the overall thickness of the display panel.

[0093] In one embodiment, the materials of the first encapsulation layer 131 and the third encapsulation layer 133 include inorganic materials. Specifically, inorganic materials have high density, low moisture content, high barrier properties, and low reactivity, and will not easily react, effectively isolating external moisture and preventing external water and oxygen from intruding into the interior of the display panel.

[0094] In one embodiment, the material of the first encapsulation layer 131 / third encapsulation layer 133 includes at least one of silicon oxide (SiO), silicon nitride (SiN), and silicon oxynitride (SiON). Specifically, the material of the first encapsulation layer 131 / third encapsulation layer 133 may include only one of silicon nitride, silicon oxide, and silicon oxynitride, or it may include two or three of silicon nitride, silicon oxide, and silicon oxynitride. The materials of the first encapsulation layer 131 and the third encapsulation layer 133 may be the same or different, depending on actual needs.

[0095] In one embodiment, the first encapsulation layer 131 and the third encapsulation layer 133 are formed using chemical vapor deposition (CVD). Specifically, chemical vapor deposition is a chemical engineering technique that utilizes one or more gaseous compounds or elements containing thin film elements to chemically react on a substrate surface to generate a thin film. It is a very mature process, and therefore, using CVD to form the first encapsulation layer 131 and the third encapsulation layer 133 can improve preparation efficiency and ensure product quality.

[0096] In one embodiment, the thickness of the first encapsulation layer 131 and the distance between the two opposing surfaces of the third encapsulation layer 133 are less than 3 micrometers, that is, the thickness of the first encapsulation layer 131 and the thickness of the third encapsulation layer 133 are less than 3 micrometers. For example, the thickness is 3 micrometers, 2 micrometers or 1 micrometer. This thickness range can prevent the thickness of the first encapsulation layer 131 and the thickness of the third encapsulation layer 133 from being too large and increasing the overall thickness of the display panel.

[0097] In one embodiment, the first encapsulation layer 131 and the third encapsulation layer 133 have the same structure, specifically including the same material and equal thickness, so that the same process can be used in the preparation process, which can improve the preparation efficiency.

[0098] In one specific example, the thickness of the first encapsulation layer 131 is 1 micrometer, the thickness of the second encapsulation layer 132 is 0.5 micrometers, and the thickness of the third encapsulation layer 133 is 1 micrometer. At this time, the total thickness of the encapsulation layer 130 is 2.5 micrometers. Compared with the conventional 14-micrometer thick encapsulation layer 130, this application can greatly reduce the thickness of the display panel.

[0099] In related technologies, the second encapsulation layer 132 is typically fabricated using IJP (inkjet printing) technology, resulting in a relatively large thickness. This leads to a large overall thickness of the encapsulation layer 130, increasing the distance between the light-emitting device 121 and the color conversion unit 40. (See [reference]). Figure 5 When the distance between the light-emitting device 121 and the first color conversion unit 141 is too large, the light emitted by the light-emitting device 121 can easily enter the color conversion unit 40 corresponding to the adjacent light-emitting device 121, thus causing light crosstalk between adjacent light-emitting sub-pixels. This crosstalk is particularly severe when the distance between adjacent light-emitting devices 121 is small (for example, when the PPI of the display panel is greater than 2000ppi, the above phenomenon is particularly obvious). This application uses iCVD (Initiated Chemical Vapor Deposition) technology to fabricate the second encapsulation layer 132 instead of the traditional IJP technology, which can significantly reduce the overall film thickness of the encapsulation layer 130. As the film thickness of the encapsulation layer 130 decreases, the distance between the light-emitting device 121 and the color conversion unit 40 decreases, thus reducing the overall thickness of the encapsulation layer 130. Figure 5It can be seen that the problem of light crosstalk in the display panel has been improved.

[0100] Combination Figure 2 as well as Figure 6 This application provides a method for manufacturing a display panel, the method comprising:

[0101] S110: A light-emitting device layer 120 is formed on the substrate 110. The light-emitting device layer 121 includes at least one light-emitting device 121, which is configured to emit a first color light in a direction away from the substrate 110.

[0102] S120: A first encapsulation layer 131 is formed on the side of the light-emitting device layer 120 away from the substrate 110. In one embodiment, the material of the first encapsulation layer 131 includes an inorganic material, and step S120 uses a CVD process to form the first encapsulation layer 131 on the light-emitting device layer 120.

[0103] In one embodiment, the material of the first encapsulation layer 131 includes at least one of silicon oxide (SiO), silicon nitride (SiN), and silicon oxynitride (SiON).

[0104] In one embodiment, the thickness of the first encapsulation layer 131 is less than 3 micrometers.

[0105] S130: The second encapsulation layer 132 is formed on the side of the first encapsulation layer 131 away from the substrate 110 using an initiation chemical vapor deposition process.

[0106] Specifically, Initiated Chemical Vapor Deposition (iCVD) combines traditional liquid-phase free radical polymerization with chemical vapor deposition technology. By simultaneously introducing a reactive initiator and reacting monomers in gaseous form into a vacuum chamber, the initiator decomposes into free radicals under slightly lower energy induction. These primary free radicals and monomers adsorb onto the substrate surface and polymerize in situ to form a polymer film. This is a green and novel method for preparing functional polymer films. The second encapsulation layer 132 is formed using iCVD, which effectively reduces its thickness compared to IJP (Initiated Polymerization) processes. As the thickness of the second encapsulation layer 132 decreases, the distance between the light-emitting device 121 and the color conversion unit 40 decreases, thereby effectively improving the problem of light crosstalk in the display panel.

[0107] In one embodiment, the thickness of the second encapsulation layer 132 is less than 6 μm. For example, the thickness of the second encapsulation layer 132 is 6 μm, 5 μm, 4 μm, 3 μm, 2 μm, 1 μm, or 0.5 μm.

[0108] S140: A third encapsulation layer 133 is formed on the side of the second encapsulation layer 132 away from the substrate 110.

[0109] In one embodiment, the material of the third encapsulation layer 133 includes inorganic materials, and step S140 uses a CVD process to form the third encapsulation layer 133 on the second encapsulation layer 132.

[0110] In one embodiment, the material of the third encapsulation layer 133 includes at least one of silicon oxide (SiO), silicon nitride (SiN), and silicon oxynitride (SiON).

[0111] In one embodiment, the thickness of the third encapsulation layer 133 is less than 3 micrometers.

[0112] In one specific example, the thickness of the first encapsulation layer 131 is 1 micrometer, the thickness of the second encapsulation layer 132 is 0.5 micrometers, and the thickness of the third encapsulation layer 133 is 1 micrometer. At this time, the total thickness of the encapsulation layer 130 is 2.5 micrometers. Compared with the conventional 14-micrometer thick encapsulation layer 130, this application can greatly reduce the thickness of the display panel.

[0113] S150: A light conversion layer 140 is formed on the side of the third encapsulation layer 133 away from the substrate 110. The light conversion layer 140 includes at least one color conversion unit 40. The at least one color conversion unit 40 includes a first color conversion unit 141. The first color conversion unit 141 is configured to convert a first color light into a second color light.

[0114] In one embodiment, the light conversion layer 140 can be directly fabricated on the surface of the third encapsulation layer 133 facing away from the substrate 110.

[0115] In another embodiment, a color filter substrate including a light conversion layer 140 can be prepared, and then the color filter substrate can be disposed on the side of the third encapsulation layer away from the substrate 110.

[0116] In one embodiment, after step S150, the cover plate 170 is attached to the side of the light conversion layer 140 facing away from the substrate 110.

[0117] In one embodiment, step S130 specifically includes:

[0118] S131: Initiator and monomer are introduced into a vacuum chamber for vapor deposition to obtain the second encapsulation layer 132.

[0119] The initiator includes tert-butyl peroxide, and the monomer includes at least one of isopropylacrylamide, trivinyltrimethyl ester, dioxane, and perfluorododecyl acrylate.

[0120] It should be noted that the above step numbers are for ease of description only and are not a limitation on the order of steps. Those skilled in the art can adjust the order according to the actual process.

[0121] This application also includes a display device comprising the display panel of any of the above embodiments, or the display device comprising a display panel prepared by any of the above preparation methods. For details regarding the specific structure and preparation method of the display panel, please refer to the above-mentioned related content, which will not be repeated here.

[0122] Since the display device has the aforementioned display panel, it has the same beneficial effects, which will not be described again in this application.

[0123] This application does not impose specific limitations on the application of display devices, which can be any product or component with display function, such as televisions, laptops, tablets, wearable display devices, mobile phones, in-vehicle displays, navigation systems, e-books, digital photo frames, and advertising light boxes.

[0124] As can be seen from the above, this application uses iCVD technology (Initiated Chemical Vapor Deposition) to fabricate the second encapsulation layer 132 instead of the traditional IJP technology, which can significantly reduce the overall film thickness of the encapsulation layer 130, thereby effectively improving the problem of light crosstalk in the display panel.

[0125] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A display panel, characterized in that, The display panel includes: A substrate includes a substrate and a driving layer disposed on the substrate, the driving layer including a pixel driving circuit. A light-emitting device layer is disposed on the side of the driving layer away from the substrate and includes at least one light-emitting device. The light-emitting device is electrically connected to the pixel driving circuit and is configured to emit a first color light in a direction away from the substrate under the drive of the pixel driving circuit. An encapsulation layer is disposed on the surface of the light-emitting device layer away from the substrate; wherein the encapsulation layer includes at least a first encapsulation layer, a second encapsulation layer and a third encapsulation layer along a direction perpendicular to the substrate, and the second encapsulation layer is formed by an initiation chemical vapor deposition process; A light conversion layer is disposed on the surface of the encapsulation layer away from the substrate. The light conversion layer includes at least one color conversion unit, and the at least one color conversion unit includes a first color conversion unit configured to convert the first color light into a second color light.

2. The display panel according to claim 1, characterized in that, The distance between the two opposing surfaces of the second encapsulation layer is less than 6 μm; Preferably, the distance between the two opposing surfaces of the second encapsulation layer is 0.5 μm.

3. The display panel according to claim 1, characterized in that, The material of the second encapsulation layer includes tert-butyl peroxide; Furthermore, the material of the second encapsulation layer also includes at least one of isopropylacrylamide, trivinyltrimethyl ester, dioxane, and perfluorododecyl acrylate.

4. The display panel according to claim 1, characterized in that, The materials of the first encapsulation layer and the third encapsulation layer include inorganic materials; Preferably, the material of the first encapsulation layer / the third encapsulation layer includes at least one of silicon nitride, silicon oxide, and silicon oxynitride; Preferably, the first encapsulation layer and the third encapsulation layer are formed using a chemical vapor deposition process; Preferably, the distance between the two opposing surfaces of the first encapsulation layer and the third encapsulation layer is less than 3 micrometers.

5. The display panel according to claim 1, characterized in that, The light-emitting device includes a first electrode, an organic layer, and a second electrode sequentially stacked in a direction away from the substrate, wherein the distance between the two opposing surfaces of the second electrode ranges from [missing information]. Preferably, the light-emitting device further includes a capping layer located on the side of the second electrode facing away from the substrate, and the distance between the two opposing surfaces of the capping layer ranges from [missing information]. Preferably, the refractive index of the capping layer is in the range of 1.5 to 2.

6. The display panel according to claim 1, characterized in that, The color conversion unit includes quantum dot material, the first color light is blue light, and the second color light is either red light or green light; Preferably, the light conversion layer further includes a light-transmitting unit configured to transmit blue light emitted by the light-emitting device; Preferably, the light conversion layer further includes a black matrix, wherein the black matrix is ​​disposed between two adjacent color conversion units, and / or, a black matrix is ​​disposed between the color conversion unit and the light transmission unit.

7. The display panel according to claim 1, characterized in that, The display panel also includes: A filter layer is disposed on the side of the light conversion layer opposite to the substrate, and includes at least one filter block, wherein the at least one filter block includes a first filter block, and the orthographic projection of the first filter block on the substrate at least partially overlaps with the orthographic projection of the first color conversion unit on the substrate; Preferably, the display panel further includes a cover plate disposed on the side of the filter layer opposite to the substrate.

8. A method for manufacturing a display panel, characterized in that, The preparation method includes: A light-emitting device layer is formed on a substrate, the light-emitting device layer including at least one light-emitting device, the light-emitting device being configured to emit a first color light in a direction away from the substrate; A first encapsulation layer is formed on the side of the light-emitting device layer opposite to the substrate; A second encapsulation layer is formed on the side of the first encapsulation layer away from the substrate using an initiation-based chemical vapor deposition process. A third encapsulation layer is formed on the side of the second encapsulation layer that is away from the substrate; A light conversion layer is formed on the side of the third encapsulation layer opposite to the substrate. The light conversion layer includes at least one color conversion unit, and the at least one color conversion unit includes a first color conversion unit configured to convert the first color light into a second color light.

9. The method according to claim 8, characterized in that, The step of forming a second encapsulation layer on the side of the first encapsulation layer away from the substrate using an initiation-based chemical vapor deposition process includes: The initiator and monomer are introduced into a vacuum chamber for vapor deposition to obtain the second encapsulation layer; The initiator includes tert-butyl peroxide, and the monomer includes at least one of isopropylacrylamide, trivinyltrimethyl ester, dioxane, and perfluorododecyl acrylate.

10. A display device, characterized in that, It includes a display panel as described in any one of claims 1 to 7, or a display panel prepared by the method described in any one of claims 8 to 9.

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