Display panel, manufacturing method of display panel and electronic device

Abstract

The application provides a display panel, a manufacturing method of the display panel and an electronic device, and relates to the technical field of display panels.The display panel comprises a substrate, an array functional film layer, a conductive layer, an encapsulation layer and a touch wiring layer.The array functional film layer is located on one side of the substrate, and comprises at least one wire changing hole.The conductive layer is located on the side of the array functional film layer away from the substrate, at least part of the conductive layer extends into the wire changing hole, and covers at least part of the first side wall of the array functional film layer facing the wire changing hole.The encapsulation layer is located on the side of the conductive layer away from the substrate, and exposes the second side wall of the conductive layer facing the wire changing hole.The touch wiring layer is located on the side of the encapsulation layer away from the substrate, at least part of the touch wiring layer extends into the wire changing hole, and is in contact with the second side wall.In this way, the touch wiring layer can be directly electrically connected with the conductive layer, and the etching step of the encapsulation layer in the preparation process of the traditional touch panel is avoided, and the risk of encapsulation failure is reduced.

Description

Technical Field

[0001] This application relates to the field of display panel technology, and more specifically, to a display panel, a method for manufacturing the display panel, and an electronic device. Background Technology

[0002] With the development of display device manufacturing technology, Active Matrix Organic Light Emitting Diode (AMOLED) has been widely used because it combines the advantages of Active Matrix and Organic Light Emitting Diode (OLED).

[0003] Currently, most commonly used AMOLED display panels employ self-capacitive touch panels, which typically involve fabricating a touch trace layer above the encapsulation layer. However, fabricating the touch trace layer requires etching the encapsulation layer, which can lead to encapsulation failure. Summary of the Invention

[0004] In order to overcome the above-mentioned shortcomings in the prior art, the purpose of this application is to provide a display panel, the display panel including a display area and a non-display area located on at least one side of the display area;

[0005] The display panel also includes:

[0006] substrate;

[0007] An array functional film layer is located on one side of the substrate, and the array functional film layer includes at least one switching hole located in the non-display area;

[0008] A conductive layer is located on the side of the array functional film layer away from the substrate, and at least a portion of the conductive layer extends into the switching hole and covers at least a portion of the first sidewall of the array functional film layer facing the switching hole.

[0009] An encapsulation layer is located on the side of the conductive layer away from the substrate, and the encapsulation layer exposes a second sidewall of the conductive layer facing the transponder hole;

[0010] A touch trace layer is located on the side of the encapsulation layer away from the substrate, and at least a portion of the touch trace layer extends into the transponder hole and contacts the second sidewall of the conductive layer.

[0011] In one possible implementation, the conductive layer includes at least one array trace, the touch trace layer includes at least one touch trace, and one of the touch traces is electrically connected to one of the array traces through a plurality of the switching holes.

[0012] In one possible implementation, the angle between the first sidewall of the array functional film layer and the substrate ranges from 60° to 90°.

[0013] In one possible implementation, the thickness of the encapsulation layer is less than or equal to 30 nanometers in the direction away from the substrate.

[0014] In one possible implementation, the depth of the wire-swapping hole is greater than 490 nanometers in the direction away from the substrate.

[0015] In one possible implementation, the array functional film layer includes a first sublayer and a second sublayer stacked sequentially.

[0016] The switching hole penetrates the second sub-layer and exposes the first sub-layer, and the conductive layer extends into the switching hole to contact the exposed first sub-layer;

[0017] Preferably, the second sublayer comprises a membrane structure or one or more membrane structures stacked together.

[0018] In one possible implementation, the conductive layer includes a third sublayer and a fourth sublayer, the third sublayer being located on the side of the fourth sublayer close to the array functional film layer, at least a portion of the third sublayer extending into the switching hole and covering at least a portion of the first sidewall of the array functional film layer facing the switching hole; at least a portion of the fourth sublayer extending into the switching hole and covering at least a portion of the third sidewall of the third sublayer facing the switching hole.

[0019] In one possible implementation, the array functional film layer includes a first sublayer and a second sublayer stacked sequentially.

[0020] The cable switching hole penetrates the second sub-layer and exposes the first sub-layer, and the third sub-layer extends into the cable switching hole and contacts the exposed first sub-layer;

[0021] Preferably, the second sublayer comprises a membrane structure or one or more membrane structures stacked together.

[0022] Another objective of this application is to provide a method for manufacturing a display panel, the display panel including a display area and a non-display area located on at least one side of the display area;

[0023] The method includes:

[0024] Provide a substrate;

[0025] An array functional film layer is disposed on one side of the substrate, the array functional film layer being located on one side of the substrate, and the array functional film layer including at least one switching hole located in the non-display area;

[0026] A conductive layer is disposed on the side of the array functional film layer away from the substrate, and at least a portion of the conductive layer extends into the switching hole and covers at least a portion of the first sidewall of the array functional film layer facing the switching hole.

[0027] An encapsulation layer is disposed on the side of the conductive layer away from the substrate. The encapsulation layer is located on the side of the conductive layer away from the substrate, and the encapsulation layer exposes the second sidewall of the conductive layer facing the switching hole.

[0028] A touch trace layer is provided on the side of the encapsulation layer away from the array functional film layer. The touch trace layer is located on the side of the encapsulation layer away from the substrate. At least a portion of the touch trace layer extends into the switching hole and contacts the second sidewall of the conductive layer.

[0029] Another object of this application is to provide an electronic device, the electronic device including the display panel provided in this application or the display panel manufactured by the method of manufacturing the display panel provided in this application.

[0030] Compared with the prior art, this application has the following beneficial effects:

[0031] This application provides a display panel, a method for manufacturing the display panel, and an electronic device. By exposing the second sidewall of the conductive layer facing the switching hole through the encapsulation layer, the touch wiring layer can be directly electrically connected to the conductive layer, ensuring the stability of electrical signal transmission. Simultaneously, it avoids the etching step of the encapsulation layer in the traditional touch panel manufacturing process, thereby reducing the risk of encapsulation failure and improving the reliability and production efficiency of the display panel. Attached Figure Description

[0032] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 This is a schematic diagram of the structure of a display panel in the prior art;

[0034] Figure 2 This is a schematic diagram of the structure of the display panel provided in an embodiment of this application;

[0035] Figure 3 One of the partial cross-sectional schematic diagrams of the display panel provided in the embodiments of this application;

[0036] Figure 4 This is one of the structural schematic diagrams of the array functional film layer provided in the embodiments of this application;

[0037] Figure 5 This is the second schematic diagram of the structure of the array functional film layer provided in the embodiments of this application;

[0038] Figure 6 This is the third schematic diagram of the structure of the array functional film layer provided in the embodiments of this application;

[0039] Figure 7 This is a schematic diagram of the structure of the wire-changing hole provided in an embodiment of this application;

[0040] Figure 8 This is the fourth schematic diagram of the structure of the array functional film layer provided in the embodiments of this application;

[0041] Figure 9 This is a second partial cross-sectional schematic diagram of the display panel provided in an embodiment of this application;

[0042] Figure 10 This is the third partial cross-sectional schematic diagram of the display panel provided in the embodiments of this application;

[0043] Figure 11 This is a flowchart illustrating a method for manufacturing a display panel according to an embodiment of this application.

[0044] Icons: 110 - Display area; 120 - Non-display area; 200 - Substrate; 300 - Array functional film layer; 301 - Transformer hole; 302 - First sidewall; 310 - First sublayer; 320 - Second sublayer; 330 - Fifth sublayer; 400 - Conductive layer; 401 - Second sidewall; 410 - Third sublayer; 411 - Third sidewall; 420 - Fourth sublayer; 500 - Encapsulation layer; 600 - Touch trace layer. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0046] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0047] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0048] In the description of this application, it should be noted that the terms "center," "upper," "lower," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of the invention is in use. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. In addition, the terms "first," "second," and "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0049] It should be noted that, where there is no conflict, different features in the embodiments of this application can be combined with each other.

[0050] The inventors discovered that in a touch panel, the touch trace layer can be connected to the conductive layer in the array functional film layer through the transponder hole 301' located in the non-display area 120'. However, please refer to... Figure 1 During the deposition process, the encapsulation layer 500' extends to the area where the switching hole 301' is located. Therefore, before fabricating the touch wiring layer, the encapsulation layer 500' needs to be etched with etching paste and then cleaned with cleaning solution. During the cleaning process, the cleaning solution may penetrate into the array functional film layer, which may lead to encapsulation failure.

[0051] In view of this, this embodiment provides a solution that can solve the above problems. The solution provided in this embodiment will be described in detail below.

[0052] Please refer to Figure 2 , Figure 2 Example: A schematic diagram of the structure of the display panel provided in this embodiment. The display panel may include a display area 110 and a non-display area 120 located on at least one side of the display area 110.

[0053] In this embodiment, the non-display area 120 may be arranged around the display area 110, and the non-display area 120 may be provided with a cable switching area, which includes at least one cable switching hole 301.

[0054] Please refer to Figure 3 The display panel may also include a substrate 200, an array functional film layer 300, a conductive layer 400, an encapsulation layer 500, and a touch wiring layer 600 stacked in sequence.

[0055] In this embodiment, the substrate 200 can extend from the display area 110 to the non-display area 120, and the material of the substrate 200 can be polyimide (PI).

[0056] The array functional film layer 300 may be located on one side of the substrate 200, and the array functional film layer 300 may include at least one switching hole 301 located in the non-display area 120.

[0057] In this embodiment, the array functional film layer 300 can extend from the display area 110 to the non-display area 120, and the orthographic projection of the array functional film layer 300 on the substrate 200 can completely cover the substrate 200. The array functional film layer 300 may include multiple film layer structures. During the formation of the multiple film layer structures of the array functional film layer 300, one or more switching holes 301 can be etched and formed. In the direction away from the substrate 200, the depth of the switching hole 301 can be less than the thickness of the array functional film layer 300.

[0058] Specifically, the array functional film layer 300 may include a first sublayer 310 and a second sublayer 320 stacked sequentially, with the second sublayer 320 located on the side of the first sublayer 310 away from the substrate 200. The wire-changing hole 301 may penetrate the second sublayer 320 and expose the first sublayer 310. The second sublayer 320 may include one or more film layer structures stacked together. For example, the second sublayer 320 may include one, two, three, etc., and the first sublayer 310 may include one film layer structure.

[0059] In addition, the array functional film layer 300 may also include a fifth sub-layer 330, which may be located on the side of the first sub-layer 310 close to the substrate 200. The fifth sub-layer 330 may also include a film layer structure or one or more film layer structures stacked together.

[0060] In some examples, please refer to Figure 4 When the second sublayer 320 includes a film structure, such as an interlayer dielectric layer (ILD), the first sublayer 310 can be a metal layer (M2). In this case, the fifth sublayer 330 can include multiple film structures, such as a capacitor insulating layer (CI), a gate insulating layer (GI), a buffer layer (Buffer), etc.

[0061] In other examples, please refer to Figure 5 When the second sub-layer 320 includes one or more stacked film layer structures, for example, when the second sub-layer 320 includes a stacked capacitor insulating layer CI and an interlayer dielectric layer ILD, the first sub-layer 310 can be a gate M1. In this case, the fifth sub-layer 330 can also have multiple film layer structures, such as a gate insulating layer GI, a buffer layer, etc.

[0062] It should be noted that, please refer to Figure 6 When the depth of the wire-changing hole 301 is relatively deep, and the second sub-layer 320 through which the wire-changing hole 301 penetrates includes more than one stacked membrane structure, for example, when the first sub-layer 310 exposed by the wire-changing hole 301 is a buffer layer, the array functional membrane layer 300 may not include the fifth sub-layer 330.

[0063] Please refer to this again. Figure 3 The conductive layer 400 may be located on the side of the array functional film layer 300 away from the substrate 200. At least a portion of the conductive layer 400 extends into the switching hole 301 and covers at least a portion of the array functional film layer 300 toward the first sidewall 302 of the switching hole 301.

[0064] In this embodiment, the conductive layer 400 can extend from the display area 110 to the non-display area 120. In the direction away from the substrate 200, the thickness of the conductive layer 400 outside the switching hole 301 can be equal to the thickness of the conductive layer 400 inside the switching hole 301, and the depth of the switching hole 301 can be greater than the thickness of the conductive layer 400 inside the switching hole 301.

[0065] Specifically, the conductive layer 400 can extend into the switching hole 301 and cover the second sub-layer 320 of the array functional film layer 300 facing the first sidewall 302 of the switching hole 301. The conductive layer 400 can also cover the bottom surface of the switching hole 301 and contact the first sub-layer 310 exposed by the switching hole 301. The material of the conductive layer 400 can be a metallic material.

[0066] The encapsulation layer 500 may be located on the side of the conductive layer 400 away from the substrate 200, and the encapsulation layer 500 may expose the second sidewall 401 of the conductive layer 400 facing the transceiver hole 301.

[0067] In this embodiment, the encapsulation layer 500 may cover at least a portion of the conductive layer 400. In the direction away from the substrate 200, the thickness of the encapsulation layer 500 may be less than the thickness of the conductive layer 400. The encapsulation layer 500 may include a first portion located outside the switching hole 301 and a second portion located inside the switching hole 301. The first and second portions of the encapsulation layer 500 are not connected to each other, and the thickness of the first portion may be equal to the thickness of the second portion. The second portion of the encapsulation layer 500 may cover the conductive layer 400 located on the bottom surface of the switching hole 301, but the encapsulation layer 500 does not cover the second sidewall 401 of the conductive layer 400 facing the switching hole 301. The material of the encapsulation layer 500 may be an inorganic material, for example, silicon oxide.

[0068] The touch trace layer 600 may be located on the side of the encapsulation layer 500 away from the substrate 200. At least a portion of the touch trace layer 600 may extend into the transponder hole 301 and contact the second sidewall 401 of the conductive layer 400.

[0069] In this embodiment, the touch wiring layer 600 can cover the encapsulation layer 500 and the exposed conductive layer 400 of the encapsulation layer 500. In the direction away from the substrate 200, the thickness of the touch wiring layer 600 outside the switching hole 301 can be equal to the thickness of the touch wiring layer 600 inside the switching hole 301. Specifically, the touch wiring layer 600 located inside the switching hole 301 can cover the second sidewall 401 of the conductive layer 400, and can also cover the encapsulation layer 500 located on the bottom surface of the switching hole 301. The material of the touch wiring layer 600 can be a metallic material.

[0070] Since the encapsulation layer 500 does not cover the second sidewall 401 of the conductive layer 400, the touch wiring layer 600 can contact the second sidewall 401 of the conductive layer 400, thereby achieving an electrical connection between the touch wiring layer 600 and the conductive layer 400.

[0071] Based on the above design, in the display panel provided in this embodiment, by exposing the second sidewall 401 of the conductive layer 400 facing the switching hole 301 through the encapsulation layer 500, the touch wiring layer 600 can be directly electrically connected to the conductive layer 400, ensuring the stability of electrical signal transmission. Simultaneously, it avoids the etching step of the encapsulation layer 500 in the traditional touch panel manufacturing process, thereby reducing the risk of encapsulation failure and improving the reliability and production efficiency of the display panel.

[0072] In one possible implementation, please refer to Figure 7 The conductive layer 400 may include at least one array trace, and the touch trace layer 600 may include at least one touch trace. A touch trace can be electrically connected to an array trace through multiple wire exchange holes 301, thereby realizing signal transmission between the touch trace and the array trace.

[0073] In this embodiment, the conductive layer 400 may include one or more array traces, and the touch trace layer 600 may also include one or more touch traces. The number of array traces may be equal to the number of touch traces, and at least one array trace corresponds to at least one touch trace. The orthographic projection of the array trace located in the non-display area 120 on the substrate 200 and the orthographic projection of the touch trace located in the non-display area 120 on the substrate 200 may at least partially overlap. The orthographic projections of the array traces and touch traces on the substrate 200 may completely cover the orthographic projections of the multiple line-changing holes 301 on the substrate 200. A touch trace may be electrically connected to an array trace through multiple line-changing holes 301, and the multiple line-changing holes 301 are evenly arranged.

[0074] In addition, the multiple switching holes 301 used to connect a touch trace and an array trace can have the same shape. For example, the multiple switching holes 301 can all be circular.

[0075] It should be noted that the shape of the multiple wire-changing holes 301 used to connect a touch trace and an array trace is not limited to circles, but can also be square, etc. The specific shape can be adjusted according to actual needs, and no specific limitation is made here.

[0076] In the above design, by setting multiple wire-switching holes 301 to connect a touch trace and an array trace, the area of ​​the first sidewall 302 of the array functional film layer 300 facing the wire-switching hole 301 can be increased, thereby increasing the area of ​​the conductive layer 400 covering the first sidewall 302, and thus increasing the contact area between the touch trace and the array trace, so as to improve the electrical connection effect between the touch trace and the array trace.

[0077] In one possible implementation, the angle α between the first sidewall 302 of the array functional film layer 300 and the substrate 200 can be in the range of 60° to 90°.

[0078] Compared with existing technologies, please refer to Figure 8 In this embodiment, the included angle α between the first sidewall 302 and the first sublayer 310 of the array functional film layer 300 is relatively large. The included angle α between the first sidewall 302 and the first sublayer 310 can be in the range of 60° to 90°. For example, the included angle α between the first sidewall 302 of the array functional film layer 300 and the substrate 200 can be 60°, 65°, 66°, 69°, 70°, 75°, 80°, 81°, 85° and 88°, etc. The appropriate included angle can be selected according to the actual situation.

[0079] In this embodiment, the included angle α between the first sidewall 302 and the first sub-layer 310 ranges from 60° to 90°. Since the thickness of the conductive layer 400 located outside the switching hole 301 is the same as the thickness of the conductive layer 400 located inside the switching hole 301, the included angle between the second sidewall 401 of the conductive layer 400 and the conductive layer 400 located on the bottom surface of the switching hole 301 also ranges from 60° to 90°.

[0080] In the above design, since the angle between the second sidewall 401 of the conductive layer 400 and the substrate 200 is large and the second sidewall 401 is nearly vertical, the encapsulation layer 500 is difficult to deposit on the second sidewall 401 during the deposition process, and the climbing effect of the encapsulation layer 500 is poor. This avoids the etching step of the encapsulation layer 500 in the traditional touch panel manufacturing process, thereby reducing the risk of encapsulation failure.

[0081] In one possible implementation, please refer again. Figure 3 In the direction away from the substrate 200, the thickness H of the encapsulation layer 500 is less than or equal to 30 nanometers.

[0082] In this embodiment, the thickness H of the encapsulation layer 500 is relatively small, and the thickness H of the encapsulation layer 500 can be less than or equal to 30 nanometers. At the same time, the second sub-layer 320 of the array functional film layer 300 has a relatively high hardness, and the angle between the second sidewall 401 of the conductive layer 400 and the substrate 200 is also relatively large. Therefore, the encapsulation layer 500 does not have the ability to climb slopes and cannot be deposited on the second sidewall 401 of the conductive layer 400. The second sidewall 401 of the conductive layer 400 can be directly exposed, which facilitates the electrical connection between the conductive layer 400 and the touch wiring layer 600.

[0083] For example, the thickness H of the encapsulation layer 500 may include 30 nanometers, 28 nanometers, 27 nanometers, 25 nanometers, 24 nanometers, 21 nanometers, 20 nanometers, 19 nanometers, 18 nanometers and 15 nanometers, etc., and preferably, the thickness H of the encapsulation layer 500 is 20 nanometers.

[0084] It should be noted that the thickness H of the encapsulation layer 500 can be adjusted according to the angle between the second sidewall 401 and the substrate 200 and the depth of the wire exchange hole 301, and is not specifically limited here.

[0085] In the above design, since the thickness H of the encapsulation layer 500 is relatively thin, the encapsulation layer 500 cannot be deposited on the second sidewall 401 of the conductive layer 400 during the deposition of the encapsulation layer 500. In this way, the etching step of the encapsulation layer 500 in the traditional touch panel manufacturing process can be avoided, thereby reducing the risk of encapsulation failure.

[0086] In one possible implementation, please refer again. Figure 3 In the direction away from the substrate 200, the depth L of the wire-changing hole 301 can be greater than 490 nanometers.

[0087] In this embodiment, the depth L of the wire-changing hole 301 can refer to the vertical distance from the surface of the second sublayer 320 away from the substrate 200 to the surface of the first sublayer 310 away from the substrate 200. This vertical distance can be greater than 490 nanometers. For example, the depth L of the wire-changing hole 301 can be 495 nanometers, 500 nanometers, 510 nanometers, 520 nanometers, 530 nanometers, etc., and different depths can be adjusted according to actual needs.

[0088] When the depth L of the switching hole 301 is different, the first sub-layer 310 and the second sub-layer 320 can be different film structures. In some examples, when the depth L of the switching hole 301 is small, the second sub-layer 320 can include a single film structure, and the first sub-layer 310 can include a film structure in contact with that film structure, such as a metal layer M2. When the depth L of the switching hole 301 is large, the second sub-layer 320 can include multiple stacked film structures, and the first sub-layer 310 can include another film structure located on the side of the second sub-layer 320 closer to the substrate 200, such as a buffer layer.

[0089] For wire-changing holes 301 of different depths, the included angle α between the first sidewall 302 of the array functional film layer 300 and the substrate 200, as well as the thickness H of the encapsulation layer 500, can be different, and the climbing effect of the conductive layer 400 will also be different.

[0090] In one possible implementation, please refer to Figure 9 The conductive layer 400 may include a third sublayer 410 and a fourth sublayer 420. The third sublayer 410 is located on the side of the fourth sublayer 420 near the array functional film layer 300. At least a portion of the third sublayer 410 extends into the switching hole 301 and covers at least a portion of the first sidewall 302 of the array functional film layer 300 facing the switching hole 301. At least a portion of the fourth sublayer 420 extends into the switching hole 301 and covers at least a portion of the third sidewall 411 of the third sublayer 410 facing the switching hole 301.

[0091] In this embodiment, the conductive layer 400 may include a third sub-layer 410 and a fourth sub-layer 420 stacked sequentially, both extending into the switching hole 301. The third sub-layer 410 may cover the first sidewall 302 of the array functional film layer 300 and the bottom surface of the switching hole 301, while the fourth sub-layer 420 may cover the third sidewall 411 of the third sub-layer 410 and the third sub-layer 410 located on the bottom surface of the switching hole 301. The touch wiring layer 600 may contact the fourth sub-layer 420 and achieve electrical connection with the third sub-layer 410 through the fourth sub-layer 420.

[0092] The fourth sublayer 420 can be an anode layer, and the materials of the third sublayer 410 and the fourth sublayer 420 can both be metallic materials. The material of the third sublayer 410 can be titanium-aluminum-titanium (Ti-Al-Ti), and the material of the fourth sublayer 420 can be metallic silver (Ag).

[0093] In another possible implementation, the conductive layer 400 may consist only of the fourth sub-layer 420, which may cover the first sidewall 302 of the array functional film layer 300 and the bottom surface of the switching hole 301. The touch wiring layer 600 may be directly electrically connected to the fourth sub-layer 420 to achieve signal transmission.

[0094] In one possible implementation, please refer again. Figure 9 The array functional film layer 300 may include a first sub-layer 310 and a second sub-layer 320 stacked sequentially. The switching hole 301 can penetrate the second sub-layer 320 and expose the first sub-layer 310. The third sub-layer 410 can extend into the switching hole 301 and contact the exposed first sub-layer 310.

[0095] In this embodiment, the third sub-layer 410 can cover the first sidewall 302 of the second sub-layer 320 of the array functional film layer 300, and can also cover the first sub-layer 310 exposed by the wire switching hole 301.

[0096] In some examples, please refer to Figure 10 When the second sub-layer 320 includes multiple stacked film structures, such as a gate insulating layer GI, a capacitor insulating layer CI, and an interlayer dielectric layer ILD, the first sub-layer 310 can be an inorganic semiconductor active layer P-Si, and the fifth sub-layer 330 can be a buffer layer. The third sub-layer 410 can cover the first sidewall 302 of the gate insulating layer GI, the capacitor insulating layer CI, and the interlayer dielectric layer ILD facing the switching hole 301, and can also cover the surface of the inorganic semiconductor active layer P-Si exposed by the switching hole 301. In addition, the coverage of the third sub-layer 410 can protect the switching hole 301.

[0097] This application also provides a method for manufacturing a display panel, which may include a display area 110 and a non-display area 120 located on at least one side of the display area 110.

[0098] Please refer to Figure 11 The method for manufacturing a display panel may include the following steps.

[0099] Step S110: Provide a substrate 200.

[0100] In this embodiment, the substrate 200 can extend from the display area 110 to the non-display area 120, and the material of the substrate 200 can be polyimide (PI).

[0101] In step S120, an array functional film layer 300 is disposed on one side of the substrate 200. The array functional film layer 300 is located on one side of the substrate 200 and includes at least one switching hole 301 located in the non-display area 120.

[0102] In this embodiment, an array functional film layer 300 can be disposed on one side of the substrate 200 provided in step S110. The array functional film layer 300 can extend from the display area 110 to the non-display area 120, and the orthographic projection of the array functional film layer 300 on the substrate 200 can completely cover the substrate 200. The array functional film layer 300 may include multiple stacked film layer structures, such as a buffer layer, an inorganic semiconductor active layer P-Si, a gate insulating layer GI, a gate M1, a capacitor insulating layer CI, and an interlayer dielectric layer ILD, etc.

[0103] During the formation of multiple film layer structures of the array functional film layer 300, at least one transponder hole 301 can be etched to form. The transponder hole 301 can be used to realize the electrical connection between the conductive layer 400 and the touch wiring layer 600. In the direction away from the substrate 200, the depth of the transponder hole 301 can be less than the thickness of the array functional film layer 300.

[0104] It should be noted that the depth of the wire replacement hole 301 can be adjusted according to the actual situation. For example, the depth of the wire replacement hole 301 can be greater than 470 nanometers.

[0105] Specifically, the array functional film layer 300 may include a first sublayer 310 and a second sublayer 320 stacked sequentially, with the second sublayer 320 located on the side of the first sublayer 310 away from the substrate 200. A wire-changing via 301 may penetrate the second sublayer 320 and expose the first sublayer 310. The second sublayer 320 may include one or more film structures stacked together, and the first sublayer 310 may include one film structure.

[0106] In addition, the array functional film layer 300 may also include a fifth sub-layer 330, which may be located on the side of the first sub-layer 310 close to the substrate 200.

[0107] In step S130, a conductive layer 400 is disposed on the side of the array functional film layer 300 away from the substrate 200. At least a portion of the conductive layer 400 extends into the switching hole 301 and covers at least a portion of the first sidewall 302 of the array functional film layer 300 facing the switching hole 301.

[0108] In this embodiment, a conductive layer 400 can be disposed on the side of the array functional film layer 300 disposed in step S120 away from the substrate 200. The conductive layer 400 can extend from the display area 110 to the non-display area 120. In the direction away from the substrate 200, the thickness of the conductive layer 400 outside the line-changing hole 301 can be equal to the thickness of the conductive layer 400 inside the line-changing hole 301, and the depth of the line-changing hole 301 can be greater than the thickness of the conductive layer 400 inside the line-changing hole 301.

[0109] Specifically, the conductive layer 400 can extend into the switching hole 301 and cover the second sub-layer 320 of the array functional film layer 300 facing the first sidewall 302 of the switching hole 301. The conductive layer 400 can also cover the bottom surface of the switching hole 301 and contact the first sub-layer 310 exposed by the switching hole 301. The material of the conductive layer 400 can be a metallic material.

[0110] In addition, the conductive layer 400 may include a second sidewall 401 facing the wire exchange hole 301. The angle between the second sidewall 401 and the substrate 200 is relatively large, ranging from 60° to 90°. The second sidewall 401 is nearly vertically positioned. Therefore, during the deposition of the encapsulation layer 500 in step S140, the encapsulation layer 500 is difficult to deposit on the second sidewall 401, resulting in poor climbing effect of the encapsulation layer 500 and exposing the second sidewall 401 of the conductive layer 400.

[0111] In step S140, an encapsulation layer 500 is provided on the side of the conductive layer 400 away from the substrate 200. The encapsulation layer 500 is located on the side of the conductive layer 400 away from the substrate 200, and the encapsulation layer 500 exposes the second sidewall 401 of the conductive layer 400 facing the wire switching hole 301.

[0112] In this embodiment, an encapsulation layer 500 can be deposited on the side of the conductive layer 400 disposed in step S130 that is away from the substrate 200. The encapsulation layer 500 can be used to protect the display panel from external water and oxygen intrusion. The encapsulation layer 500 can be prepared by chemical vapor deposition.

[0113] The encapsulation layer 500 may cover at least a portion of the conductive layer 400. In the direction away from the substrate 200, the thickness of the encapsulation layer 500 may be less than the thickness of the conductive layer 400. The encapsulation layer 500 may include a first portion located outside the transceiver hole 301 and a second portion located inside the transceiver hole 301. The first and second portions of the encapsulation layer 500 are not connected to each other, and the thickness of the first portion may be equal to the thickness of the second portion. The second portion of the encapsulation layer 500 may cover the conductive layer 400 located on the bottom surface of the transceiver hole 301. The encapsulation layer 500 does not cover the second sidewall 401 of the conductive layer 400 facing the transceiver hole 301. The material of the encapsulation layer 500 may be an inorganic material, for example, silicon oxide.

[0114] Furthermore, during the deposition of the encapsulation layer 500, the thickness of the deposited encapsulation layer 500 is relatively small, which can be less than or equal to 30 nanometers. Simultaneously, the second sublayer 320 of the array functional film layer 300 has high hardness, and the angle between the second sidewall 401 of the conductive layer 400 and the substrate 200 is also large. Therefore, the encapsulation layer 500 lacks the ability to climb over the surface and cannot be deposited on the second sidewall 401 of the conductive layer 400. The second sidewall 401 of the conductive layer 400 can be directly exposed, facilitating the electrical connection between the conductive layer 400 and the touch wiring layer 600. Additionally, after the deposition of the encapsulation layer 500 is completed, there is no need to further etch the encapsulation layer 500 with etching paste, thus avoiding encapsulation failure.

[0115] In step S150, a touch trace layer 600 is provided on the side of the encapsulation layer 500 away from the array functional film layer 300. The touch trace layer 600 is located on the side of the encapsulation layer 500 away from the substrate 200. At least a portion of the touch trace layer 600 extends into the wire switching hole 301 and contacts the second sidewall 401 of the conductive layer 400.

[0116] In this embodiment, a touch wiring layer 600 can be disposed on the side of the encapsulation layer 500 formed in step S140 away from the array functional film layer 300. The touch wiring layer 600 can cover the encapsulation layer 500 and the exposed conductive layer 400 of the encapsulation layer 500. In the direction away from the substrate 200, the thickness of the touch wiring layer 600 outside the switching hole 301 can be equal to the thickness of the touch wiring layer 600 inside the switching hole 301. Specifically, the touch wiring layer 600 located inside the switching hole 301 can cover the second sidewall 401 of the conductive layer 400 and can also cover the encapsulation layer 500 located on the bottom surface of the switching hole 301. The material of the touch wiring layer 600 can be a metal material.

[0117] Since the encapsulation layer 500 does not cover the second sidewall 401 of the conductive layer 400, the touch wiring layer 600 can be electrically connected to the second sidewall 401 of the conductive layer 400, thereby realizing signal transmission between the touch wiring layer 600 and the conductive layer 400.

[0118] In the above design, by exposing the second sidewall 401 of the conductive layer 400 facing the switching hole 301 through the encapsulation layer 500, the touch wiring layer 600 can directly connect to the conductive layer 400, ensuring the stability of electrical signal transmission. Simultaneously, it avoids the etching step of the encapsulation layer 500 in the traditional touch panel manufacturing process, thereby reducing the risk of encapsulation failure and improving the reliability and production efficiency of the display panel.

[0119] This application also provides an electronic device, which may include the display panel provided in this application or a display panel manufactured using the method described in this application. The electronic device may include devices with display functions such as monitors, video walls, mobile phones, tablets, laptops, and televisions.

[0120] In summary, the embodiments of this application provide a display panel, a method for manufacturing the display panel, and an electronic device. By exposing the second sidewall of the conductive layer facing the switching hole through the encapsulation layer, the touch wiring layer can be directly electrically connected to the conductive layer, ensuring the stability of electrical signal transmission. Simultaneously, it avoids the etching step of the encapsulation layer in the traditional touch panel manufacturing process, thereby reducing the risk of encapsulation failure and improving the reliability and production efficiency of the display panel.

[0121] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0122] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A display panel, characterized in that, The display panel includes a display area and a non-display area located on at least one side of the display area; The display panel also includes: substrate; An array functional film layer is located on one side of the substrate, and the array functional film layer includes at least one switching hole located in the non-display area; A conductive layer is located on the side of the array functional film layer away from the substrate, and at least a portion of the conductive layer extends into the switching hole and covers at least a portion of the first sidewall of the array functional film layer facing the switching hole. An encapsulation layer is located on the side of the conductive layer away from the substrate, and the encapsulation layer exposes a second sidewall of the conductive layer facing the transponder hole; A touch trace layer is located on the side of the encapsulation layer away from the substrate, and at least a portion of the touch trace layer extends into the transponder hole and contacts the second sidewall of the conductive layer.

2. The display panel according to claim 1, characterized in that, The conductive layer includes at least one array trace, and the touch trace layer includes at least one touch trace. One of the touch traces is electrically connected to one of the array traces through a plurality of the wire-changing holes.

3. The display panel according to claim 1, characterized in that, The angle between the first sidewall of the array functional film layer and the substrate ranges from 60° to 90°.

4. The display panel according to claim 1, characterized in that, In the direction away from the substrate, the thickness of the encapsulation layer is less than or equal to 30 nanometers.

5. The display panel according to claim 1, characterized in that, In the direction away from the substrate, the depth of the wire-changing hole is greater than 490 nanometers.

6. The display panel according to claim 1, characterized in that, The array functional film layer includes a first sub-layer and a second sub-layer stacked sequentially. The switching hole penetrates the second sub-layer and exposes the first sub-layer, and the conductive layer extends into the switching hole to contact the exposed first sub-layer; Preferably, the second sublayer comprises a membrane structure or one or more membrane structures stacked together.

7. The display panel according to claim 1, characterized in that, The conductive layer includes a third sublayer and a fourth sublayer. The third sublayer is located on the side of the fourth sublayer close to the array functional film layer. At least a portion of the third sublayer extends into the switching hole and covers at least a portion of the first sidewall of the array functional film layer facing the switching hole. At least a portion of the fourth sublayer extends into the switching hole and covers at least a portion of the third sidewall of the third sublayer facing the switching hole.

8. The display panel according to claim 7, characterized in that, The array functional film layer includes a first sub-layer and a second sub-layer stacked sequentially. The cable switching hole penetrates the second sub-layer and exposes the first sub-layer, and the third sub-layer extends into the cable switching hole and contacts the exposed first sub-layer; Preferably, the second sublayer comprises a membrane structure or one or more membrane structures stacked together.

9. A method for manufacturing a display panel, characterized in that, The display panel includes a display area and a non-display area located on at least one side of the display area; The method includes: Provide a substrate; An array functional film layer is disposed on one side of the substrate, the array functional film layer being located on one side of the substrate, and the array functional film layer including at least one switching hole located in the non-display area; A conductive layer is disposed on the side of the array functional film layer away from the substrate, and at least a portion of the conductive layer extends into the switching hole and covers at least a portion of the first sidewall of the array functional film layer facing the switching hole. An encapsulation layer is disposed on the side of the conductive layer away from the substrate. The encapsulation layer is located on the side of the conductive layer away from the substrate, and the encapsulation layer exposes the second sidewall of the conductive layer facing the switching hole. A touch trace layer is provided on the side of the encapsulation layer away from the array functional film layer. The touch trace layer is located on the side of the encapsulation layer away from the substrate. At least a portion of the touch trace layer extends into the switching hole and contacts the second sidewall of the conductive layer.

10. An electronic device, characterized in that, The electronic device includes a display panel as described in any one of claims 1-8 or a display panel manufactured by the method described in claim 9.

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