Display panel, preparation method thereof and display device

CN122995490APending Publication Date: 2026-10-27JINAN GOERTEK VISUAL DISPLAY TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202611122108.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-07-27
Publication Date
2026-10-27

AI Technical Summary

Technical Problem

[0003]然而,目前的OLED显示产品的制备工艺有待提升

Benefits of technology

[0048]上述显示面板的制备方法,通过于基板设有第一电极层的一侧形成隔离结构层,并于隔离结构层上形成与多个第一电极部对应的多个隔离开口,使多个隔离开口的第一隔离开口沿基板的厚度方向贯穿隔离材料层,多个隔离开口中的第二初始隔离开口沿基板的厚度方向贯穿部分隔离材料层,即第二初始隔离开口的底壁与第一电极部背离基板的一侧表面之间的间距为L1,如此,在将位于第一隔离开口以外的第一发光器件材料层和第一封装材料层去除时,对应第二初始隔离开口保留下来的隔离材料层对其下方的第一电极部起到掩膜保护作用,这样,在得到第一发光器件和第一封装部的同时,可有效降低第一电极部发生损伤的风险,改善显示面板的制备工艺,有利于提高显示面板的显示效果和可靠性。

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Abstract

The application relates to a display panel and a preparation method thereof and a display device. The method comprises the following steps: forming a first electrode layer comprising a plurality of first electrode parts arranged at intervals on one side of a substrate; forming an isolation structure layer on the side of the substrate provided with the first electrode layer, and forming a plurality of isolation openings on the isolation structure layer; the isolation structure layer comprises an isolation material layer; the plurality of isolation openings comprise first isolation openings and second initial isolation openings; the first isolation openings penetrate the isolation material layer in the thickness direction of the substrate to expose the first electrode parts; the second initial isolation openings penetrate part of the isolation material layer in the thickness direction of the substrate; the distance between the bottom wall of the second initial isolation openings and the first electrode parts is L1; forming a first light emitting device material layer and a first encapsulating material layer on the side of the substrate provided with the isolation structure layer; removing the first light emitting device material layer and the first encapsulating material layer located outside the first isolation openings to form a first light emitting device and a first encapsulating part.
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Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to display panels, methods for manufacturing the same, and display devices. Background Technology

[0002] OLED (Organic Light Emitting Diode) display panels are organic thin-film electroluminescent display panels used in display devices such as televisions, mobile phones, computers, monitors, and head-mounted displays.

[0003] However, the current manufacturing process for OLED display products needs improvement. Summary of the Invention

[0004] Therefore, it is necessary to provide a display panel, a method for manufacturing the same, and a display device, in order to improve the manufacturing process and enhance the display effect and reliability.

[0005] In a first aspect, embodiments of this application provide a method for manufacturing a display panel, comprising:

[0006] A first electrode layer is formed on one side of a substrate, the first electrode layer including a plurality of first electrode portions spaced apart;

[0007] An isolation structure layer is formed on one side of the substrate where the first electrode layer is located, and a plurality of isolation openings corresponding to the plurality of first electrode portions are formed on the isolation structure layer; the isolation structure layer includes an isolation material layer; the plurality of isolation openings include a first isolation opening and a second initial isolation opening, the first isolation opening penetrating the isolation material layer along the thickness direction of the substrate to expose the corresponding first electrode portion; the second initial isolation opening penetrating a portion of the isolation material layer along the thickness direction of the substrate, and the distance between the bottom wall of the second initial isolation opening and the surface of the first electrode portion facing away from the substrate is L1;

[0008] A first light-emitting device material layer and a first encapsulation material layer are sequentially formed on the side of the substrate where the isolation structure layer is provided. The first light-emitting device material layer and the first encapsulation material layer are located within the plurality of isolation openings and on the side surface of the isolation structure layer opposite to the substrate.

[0009] The first light-emitting device material layer and the first encapsulation material layer located outside the first isolation opening are removed to form a first light-emitting device and a first encapsulation portion located at least partially within the first isolation opening.

[0010] In some embodiments, the step of forming an isolation structure layer on one side of the substrate where the first electrode layer is provided, and forming a plurality of isolation openings on the isolation structure layer corresponding to the plurality of first electrode portions, includes:

[0011] An isolation material layer, a main conductive material layer, and a barrier material layer are sequentially formed on the side of the substrate where the first electrode layer is provided, to obtain an isolation structure layer;

[0012] Multiple isolation openings corresponding to the plurality of first electrode portions are formed on the isolation structure layer. The plurality of isolation openings include a first isolation opening and a second initial isolation opening. The first isolation opening penetrates the barrier material layer, the main conductive material layer and the isolation material layer along the thickness direction of the substrate to expose the corresponding first electrode portion. The second initial isolation opening penetrates the barrier material layer, the main conductive material layer and a portion of the isolation material layer along the thickness direction of the substrate. The distance between the bottom wall of the second initial isolation opening and the side surface of the first electrode portion facing away from the substrate is L1. The orthographic projection of the barrier material layer on the substrate is located outside the orthographic projection of the surface of the main conductive material layer near the barrier material layer on the substrate.

[0013] In some embodiments, the step of removing the first light-emitting device material layer and the first encapsulation material layer located outside the first isolation opening to form a first light-emitting device and a first encapsulation portion located at least partially within the first isolation opening includes:

[0014] Selective etching is performed on the first light-emitting device material layer and the first encapsulation material layer to retain the first light-emitting device material layer and the first encapsulation material layer located within the first isolation opening, as well as the first light-emitting device material layer and the first encapsulation material layer on the portion of the surface of the barrier material layer facing away from the substrate surrounding the first isolation opening, thereby obtaining the first light-emitting device and the first encapsulation portion.

[0015] In some embodiments, the plurality of isolation openings further includes a third initial isolation opening, which penetrates the barrier material layer, the main conductive material layer and a portion of the isolation material layer along the thickness direction of the substrate, and the distance between the bottom wall of the third initial isolation opening and the side surface of the first electrode portion away from the substrate is L2, where L2 > L1;

[0016] After the step of removing the first light-emitting device material layer and the first encapsulation material layer located outside the first isolation opening to form a first light-emitting device and a first encapsulation portion located at least partially within the first isolation opening, the method further includes:

[0017] The isolation material layer corresponding to the second initial isolation opening is etched to obtain a second isolation opening that penetrates the isolation material layer along the thickness direction of the substrate, thereby exposing the corresponding first electrode portion.

[0018] In some embodiments, after the step of etching the isolation material layer corresponding to the second initial isolation opening, the method further includes:

[0019] A second light-emitting device material layer and a second encapsulation material layer are sequentially formed on the side of the substrate where the isolation structure layer is provided. The second light-emitting device material layer and the second encapsulation material layer are located in the second isolation opening, in the third initial isolation opening, on the side of the first encapsulation portion away from the substrate, and on at least a portion of the surface of the isolation structure layer on the side away from the substrate.

[0020] The second light-emitting device material layer and the second encapsulation material layer located outside the second isolation opening are removed to form a second light-emitting device and a second encapsulation portion that are at least partially disposed within the second isolation opening.

[0021] In some embodiments, the step of removing the second light-emitting device material layer and the second encapsulation material layer located outside the second isolation opening to form a second light-emitting device and a second encapsulation portion at least partially disposed within the second isolation opening includes:

[0022] Selective etching is performed on the second light-emitting device material layer and the second encapsulation material layer to retain the second light-emitting device material layer and the second encapsulation material layer located within the second isolation opening, as well as the second light-emitting device material layer and the second encapsulation material layer on a portion of the surface of the barrier material layer facing away from the substrate around the second isolation opening, thereby obtaining the second light-emitting device and the second encapsulation portion.

[0023] In some embodiments, after removing the second light-emitting device material layer and the second encapsulation material layer located outside the second isolation opening to form a second light-emitting device and a second encapsulation portion at least partially disposed within the second isolation opening, the method further includes:

[0024] The isolation material layer corresponding to the third initial isolation opening is etched to obtain a third isolation opening that penetrates the isolation structure layer along the thickness direction of the substrate, thereby exposing the corresponding first electrode portion.

[0025] In some embodiments, after the step of etching the isolation material layer corresponding to the third initial isolation opening, the method further includes:

[0026] A third light-emitting device material layer and a third encapsulation material layer are sequentially formed on the side of the substrate where the isolation structure layer is provided. The third light-emitting device material layer and the third encapsulation material layer are located in the third isolation opening, on the side of the first encapsulation portion away from the substrate, on the side of the second encapsulation portion away from the substrate, and on at least a portion of the surface of the barrier material layer away from the substrate.

[0027] The third light-emitting device material layer and the third encapsulation material layer located outside the third isolation opening are removed to form a third light-emitting device and a third encapsulation portion that are at least partially disposed within the third isolation opening.

[0028] In some embodiments, the step of removing the third light-emitting device material layer and the third encapsulation material layer located outside the third isolation opening to form a third light-emitting device and a third encapsulation portion at least partially disposed within the third isolation opening includes:

[0029] The third light-emitting device material layer and the third encapsulation material layer are selectively etched to retain the third light-emitting device material layer and the third encapsulation material layer located within the third isolation opening, as well as the third light-emitting device material layer and the third encapsulation material layer on a portion of the surface of the barrier material layer surrounding the third isolation opening that faces away from the substrate, thereby obtaining a third light-emitting device and a third encapsulation portion.

[0030] Secondly, embodiments of this application provide a display panel, including:

[0031] substrate;

[0032] A first electrode layer is disposed on one side of the substrate, and the first electrode layer includes a plurality of first electrode portions disposed at intervals.

[0033] An isolation structure layer covers the gap between the first electrode portions, and the isolation structure layer has a plurality of isolation openings corresponding to the plurality of first electrode portions, the isolation openings exposing at least a portion of the first electrode portion; the plurality of isolation openings include a first isolation opening and a second isolation opening.

[0034] Multiple light-emitting devices, including a first light-emitting device and a second light-emitting device; the first light-emitting device is disposed within the first isolation opening, and the second light-emitting device is disposed within the second isolation opening;

[0035] The plurality of encapsulation portions include a first encapsulation portion and a second encapsulation portion. The first encapsulation portion is disposed on the side of the first light-emitting device away from the substrate, and the second encapsulation portion is located on the side of the second light-emitting device away from the substrate. The thickness of the second encapsulation portion is greater than the thickness of the first encapsulation portion.

[0036] In some embodiments, the isolation structure layer includes an isolation portion, a conductive portion, and a blocking portion stacked sequentially in a direction away from the substrate. The outer contour of the orthographic projection of the blocking portion on the substrate is located outside the outer contour of the orthographic projection of the conductive portion near the blocking portion on the substrate. The orthographic projection of the isolation portion on the substrate covers the gap between each adjacent first electrode portion, and the orthographic projection of the isolation portion on the substrate overlaps with the orthographic projection of the first electrode portion on the substrate.

[0037] The light-emitting device includes a light-emitting functional part and a second electrode part stacked sequentially along a side away from the substrate. The light-emitting functional part and the conductive part have a gap, and the second electrode part is electrically connected to the conductive part.

[0038] In some embodiments, the first encapsulation portion covers the side of the first light-emitting device away from the substrate and the sidewall of the isolation structure layer near the first isolation opening, and extends to the side of the blocking portion away from the substrate.

[0039] The display panel further includes a first light-emitting device material layer, which is located between the side surface of the blocking portion facing away from the substrate and the first encapsulation portion.

[0040] In some embodiments, the second encapsulation portion covers the side of the second light-emitting device away from the substrate and the sidewall of the isolation structure layer near the second isolation opening, and extends to the side of the blocking portion away from the substrate.

[0041] The display panel further includes a second light-emitting device material layer, which is located between the side surface of the blocking portion facing away from the substrate and the second encapsulation portion;

[0042] The distance between the surface of the blocking portion that contacts the first light-emitting device material layer and the substrate is H1, and the distance between the surface of the blocking portion that contacts the second light-emitting device material layer and the substrate is H2; H1 > H2.

[0043] In some embodiments, the plurality of isolation openings further includes a third isolation opening, and the plurality of light-emitting devices further includes a third light-emitting device disposed within the third isolation opening; the plurality of encapsulation portions include a third encapsulation portion located on the side of the third light-emitting device away from the substrate, and the thickness of the third encapsulation portion is greater than the thickness of the second encapsulation portion.

[0044] In some embodiments, the third encapsulation portion covers the side of the third light-emitting device away from the substrate and the sidewall of the isolation structure layer near the third isolation opening, and extends to the side of the blocking portion away from the substrate; the third encapsulation portion is connected to the first encapsulation portion and the second encapsulation portion;

[0045] The display panel further includes a third light-emitting device material layer, which is located between the side surface of the blocking portion facing away from the substrate and the third encapsulation portion;

[0046] The distance between the surface of the blocking portion that contacts the third light-emitting device material layer and the substrate is H3, where H2 > H3.

[0047] Thirdly, embodiments of this application provide a display device, including a display panel prepared using the method for preparing a display panel according to any one of the first aspects, or including a display panel as described in any one of the second aspects.

[0048] The above-described method for manufacturing a display panel involves forming an isolation structure layer on one side of a substrate where a first electrode layer is located, and forming multiple isolation openings corresponding to multiple first electrode portions on the isolation structure layer. The first isolation opening of the multiple isolation openings penetrates the isolation material layer along the thickness direction of the substrate, and a second initial isolation opening among the multiple isolation openings penetrates a portion of the isolation material layer along the thickness direction of the substrate. Specifically, the distance between the bottom wall of the second initial isolation opening and the surface of the first electrode portion facing away from the substrate is L1. Thus, when the first light-emitting device material layer and the first encapsulation material layer located outside the first isolation opening are removed, the isolation material layer remaining corresponding to the second initial isolation opening acts as a mask to protect the first electrode portion below it. This effectively reduces the risk of damage to the first electrode portion while obtaining the first light-emitting device and the first encapsulation portion, improves the manufacturing process of the display panel, and helps to improve the display effect and reliability of the display panel. Attached Figure Description

[0049] Figure 1 This is a flowchart of a method for preparing a display panel in some embodiments of this application.

[0050] Figure 2 This is another flowchart illustrating the method for preparing a display panel in some embodiments of this application.

[0051] Figure 3 This is another flowchart illustrating the method for preparing a display panel in some embodiments of this application.

[0052] Figure 4 Another flowchart of the method for manufacturing the display panel in some embodiments of this application.

[0053] Figure 5A This is a partial process flow diagram of the method for manufacturing a display panel in some embodiments of this application.

[0054] Figure 5B This is another part of the process flow diagram of the method for manufacturing the display panel in some embodiments of this application.

[0055] Figure 5C This is another part of the process flow diagram of the manufacturing method of the display panel in some embodiments of this application.

[0056] Figure 6 This is a cross-sectional view of the display panel in some embodiments of this application.

[0057] Figure 7 This is a cross-sectional view of the isolation structure layer of the display panel in some embodiments of this application.

[0058] 10. Display panel; 11. Substrate; 12. First electrode layer; 121. First electrode portion; 13. Isolation structure layer; 13a. Isolation opening; 13a1. First isolation opening; 13a2. Second isolation opening; 13a21. Second initial isolation opening; 13a3. Third isolation opening; 13a31. Third initial isolation opening; 131. Isolation portion; 131a. Isolation material layer; 132. Conductive portion; 132a. Main conductive material layer; 133. Blocking portion; 133a. Blocking material layer; 14. Light-emitting device; 14a, first light-emitting device; 14a1, first light-emitting device material layer; 14b, second light-emitting device; 14b1, second light-emitting device material layer; 14c, third light-emitting device; 14c1, third light-emitting device material layer; 141, light-emitting functional part; 142, second electrode part; 15, encapsulation part; 15a, first encapsulation part; 15a1, first encapsulation material layer; 15b, second encapsulation part; 15b1, second encapsulation material layer; 15c, third encapsulation part; 15c1, third encapsulation material layer. Detailed Implementation

[0059] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0060] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0061] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0062] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0063] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0064] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0065] In relevant OLED display panels, an isolation structure is provided on the substrate, defining a first isolation port, a second isolation port, and a third isolation port. A first sub-pixel, a second sub-pixel, and a third sub-pixel are respectively disposed within the first, second, and third isolation ports. The first, second, and third sub-pixels are sequentially fabricated using a patterning process. During the patterning of the first sub-pixel, the first sub-pixel material layer and encapsulation layer deposited in the second and third isolation ports are etched away. To ensure complete removal, an over-etching is performed, resulting in the anodes of both the second and third sub-pixels being etched. Compared to the first sub-pixel only undergoing etching of the pixel opening area, the second sub-pixel undergoes one additional removal of the deposited pixel material layer and encapsulation layer, and the third sub-pixel undergoes two additional removals. This ultimately leads to inconsistent etching frequencies on the anode surfaces of different sub-pixels. The anode state affects optical characteristics, impacting the display effect and reliability of the display panel.

[0066] In view of the above-mentioned technical problems, this application provides a display panel, a method for manufacturing the same, and a display device. The embodiments will be described below with reference to the accompanying drawings.

[0067] Firstly, see Figure 1 and Figure 5A As shown, this application embodiment provides a method for manufacturing a display panel 10, including:

[0068] S10. A first electrode layer 12 is formed on one side of the substrate 11. The first electrode layer 12 includes a plurality of first electrode portions 121 disposed at intervals.

[0069] Specifically, the substrate 11 includes a substrate, which can be a single-layer plate-like structure, such as a silicon substrate 11 made of monocrystalline silicon or polycrystalline silicon, or a glass substrate 11 made of a material such as silicon oxide; it can also be formed by stacking two or more layers. The first electrode portion 121 can be an anode, and the first electrode portion 121 can include a multilayer structure, such as the first electrode portion 121 including a reflective layer and a pair of conductive oxide layers respectively covering the upper and lower surfaces of the reflective layer. The reflective layer can be formed, for example, using a metallic material with excellent light reflectivity such as silver. Each conductive oxide layer can be formed, for example, from a transparent conductive oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or IGZO (Indium Gallium Zinc Oxide).

[0070] S20. An isolation structure layer 13 is formed on one side of the substrate 11 where the first electrode layer 12 is provided, and a plurality of isolation openings 13a corresponding to a plurality of first electrode portions 121 are formed on the isolation structure layer 13. The isolation structure layer 13 includes an isolation material layer 131a. The plurality of isolation openings 13a include a first isolation opening 13a1 and a second initial isolation opening 13a21. The first isolation opening 13a1 penetrates the isolation material layer 131a along the thickness direction of the substrate 11 to expose the corresponding first electrode portion 121. The second initial isolation opening 13a21 penetrates part of the isolation material layer 131a along the thickness direction of the substrate 11. The distance between the bottom wall of the second initial isolation opening 13a21 and the surface of the first electrode portion 121 facing away from the substrate 11 is L1.

[0071] Specifically, the insulating material layer 131a is used to insulate the first electrode portion 121 from the conductive material on the side of the insulating material layer 131a away from the substrate 11. The insulating material layer 131a may have a high resistivity, which greatly reduces the conductivity of the insulating material layer 131a, making the insulating material layer 131a approach an insulator. Alternatively, the insulating material layer 131a may be an insulating material. In some examples, the insulating material layer 131a may be an inorganic insulating material, such as at least one of silicon oxide, silicon nitride, or silicon oxynitride.

[0072] The second initial isolation opening 13a21 penetrates part of the isolation material layer 131a along the thickness direction of the substrate 11. The distance between the bottom wall of the second initial isolation opening 13a21 and the side surface of the first electrode portion 121 facing away from the substrate 11 is L1. That is to say, the isolation material layer 131a corresponding to the second initial isolation opening 13a21 is not etched through and retains a thickness of L1. In this way, the isolation material layer 131a retained corresponding to the second initial isolation opening 13a21 can play a mask protection role for the first electrode portion 121 below it.

[0073] S30. A first light-emitting device material layer 14a1 and a first encapsulation material layer 15a1 are sequentially formed on the side of the substrate 11 where the isolation structure layer 13 is provided. The first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 are located within a plurality of isolation openings 13a and on the side surface of the isolation structure layer 13 facing away from the substrate 11. That is, the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 are deposited over the entire surface.

[0074] Specifically, the first light-emitting device material layer 14a1 may include a first light-emitting functional material layer and a first conductive material layer. The first light-emitting functional material layer includes a hole injection layer HIL, a hole transport layer HTL, an electron blocking layer EBL, a light-emitting material layer EML, a hole blocking layer HBL, an electron transport layer ETL, and an electron injection layer EIL. The first light-emitting functional material layer may include one light-emitting material layer EML, or a stacked light-emitting structure including multiple light-emitting material layers EML. The first conductive material layer may include a metallic material such as an alloy of magnesium and silver (MgAg).

[0075] S40. Remove the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 located outside the first isolation opening 13a1 to form a first light-emitting device 14a and a first encapsulation portion 15a located at least partially within the first isolation opening 13a1.

[0076] Specifically, a photolithography process can be used to remove the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 located outside the first isolation opening 13a1. When the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 located outside the first isolation opening 13a1 are removed, the isolation material layer 131a remaining corresponding to the second initial isolation opening 13a21 acts as a mask to protect the first electrode portion 121 below it. Therefore, the risk of damage to the first electrode portion 121 during the etching process can be reduced, the manufacturing process of the display panel 10 can be improved, and the display effect and reliability of the display panel 10 can be enhanced.

[0077] In summary, the method for manufacturing the display panel 10 provided in this application involves forming an isolation structure layer 13 on one side of the substrate 11 where the first electrode layer 12 is provided, and forming a plurality of isolation openings 13a corresponding to a plurality of first electrode portions 121 on the isolation structure layer 13. The first isolation opening 13a1 of the plurality of isolation openings 13a penetrates the isolation material layer 131a along the thickness direction of the substrate 11, and the second initial isolation opening 13a21 of the plurality of isolation openings 13a penetrates a portion of the isolation material layer 131a along the thickness direction of the substrate 11. That is, the bottom wall of the second initial isolation opening 13a21 penetrates the first electrode portion 121. The spacing between the surfaces facing away from the substrate 11 is L1. Thus, when the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 located outside the first isolation opening 13a1 are removed, the isolation material layer 131a retained corresponding to the second initial isolation opening 13a21 acts as a mask to protect the first electrode portion 121 below it. In this way, while obtaining the first light-emitting device 14a and the first encapsulation portion 15a, the risk of damage to the first electrode portion 121 can be effectively reduced, the manufacturing process of the display panel 10 can be improved, and the display effect and reliability of the display panel 10 can be improved.

[0078] In some of these embodiments, see Figure 2 and Figure 5A As shown in step S20, an isolation structure layer 13 is formed on the side of the substrate 11 where the first electrode layer 12 is provided, and a plurality of isolation openings 13a corresponding to the plurality of first electrode portions 121 are formed on the isolation structure layer 13, specifically including:

[0079] S210. An isolation material layer 131a, a main conductive material layer 132a and a barrier material layer 133a are sequentially formed on the side of the substrate 11 where the first electrode layer 12 is provided, to obtain an isolation structure layer 13.

[0080] Specifically, the materials of the main conductive material layer 132a and the barrier material layer 133a are not limited, as long as the etching rate of the main conductive material layer 132a is greater than the etching rate of the barrier material layer 133a. In an optional example, the main conductive material layer 132a includes at least one of aluminum and aluminum alloy; the barrier material layer 133a includes at least one of titanium and molybdenum.

[0081] S220. A plurality of isolation openings 13a corresponding to a plurality of first electrode portions 121 are formed on the isolation structure layer 13. The plurality of isolation openings 13a include a first isolation opening 13a1 and a second initial isolation opening 13a21. The first isolation opening 13a1 penetrates the barrier material layer 133a, the main conductive material layer 132a and the isolation material layer 131a along the thickness direction of the substrate 11 to expose the corresponding first electrode portion 121. The second initial isolation opening 13a21 penetrates the barrier material layer 133a, the main conductive material layer 132a and part of the isolation material layer 131a along the thickness direction of the substrate 11. The distance between the bottom wall of the second initial isolation opening 13a21 and the side surface of the first electrode portion 121 facing away from the substrate 11 is L1. The orthographic projection of the barrier material layer 133a on the substrate 11 is located outside the orthographic projection of the surface of the main conductive material layer 132a near the barrier material layer 133a on the substrate 11.

[0082] In the above process, an isolation material layer 131a, a main conductive material layer 132a, and a barrier material layer 133a are sequentially formed on the side of the substrate 11 where the first electrode layer 12 is provided. Multiple isolation openings 13a corresponding to the multiple first electrode portions 121 are formed on the isolation structure layer 13. The outer contour of the orthographic projection of the barrier material layer 133a on the substrate 11 is located outside the outer contour of the orthographic projection of the surface of the main conductive material layer 132a near the barrier material layer 133a on the substrate 11. That is, the end of the barrier material layer 133a near the isolation opening 13a protrudes from the sidewall of the main conductive material layer 132a near the isolation opening 13a. This is beneficial to ensure that the first light-emitting device material layers formed on different sides of the isolation structure layer 13 are disconnected from each other, so that the light-emitting devices 14 of different colors are arranged alternately, reducing the risk of color mixing and improving the display effect of the prepared display panel 10. Furthermore, the first isolation opening 13a1 of the plurality of isolation openings 13a penetrates the barrier material layer 133a, the main conductive material layer 132a and the isolation material layer 131a along the thickness direction of the substrate 11; the second initial isolation opening 13a21 penetrates the barrier material layer 133a, the main conductive material layer 132a and part of the isolation material layer 131a along the thickness direction of the substrate 11. The distance between the bottom wall of the second initial isolation opening 13a21 and the side surface of the first electrode portion 121 facing away from the substrate 11 is L1. In this way, when fabricating the first light-emitting device 14a and the first encapsulation portion 15a, it can be ensured that the first light-emitting device 14a is in contact with the first electrode portion 121, ensuring that the first light-emitting device 14a emits light normally. At the same time, it can effectively reduce the risk of damage to the first electrode portion 121 corresponding to the second initial isolation opening 13a21, improve the fabrication process of the display panel 10, and improve the display effect and reliability of the fabricated display panel 10.

[0083] In some of these embodiments, see Figure 5A As shown, in step S40, the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 located outside the first isolation opening 13a1 are removed to form a first light-emitting device 14a and a first encapsulation portion 15a located at least partially within the first isolation opening 13a1, specifically including:

[0084] Selective etching is performed on the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 to retain the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 located within the first isolation opening 13a1, as well as the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 on a portion of the surface of the barrier material layer 133a surrounding the first isolation opening 13a1 that is away from the substrate 11, to obtain the first light-emitting device 14a and the first encapsulation portion 15a.

[0085] In the above process, by selectively etching the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1, the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 located within the first isolation opening 13a1, as well as the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 located on at least a portion of the surface of the barrier material layer 133a surrounding the first isolation opening 13a1 on the side facing away from the substrate 11, that is, the first light-emitting material layer and the first encapsulation material layer 15a1 are not only located within the first isolation opening 13a1, but also on a portion of the surface of the barrier material layer 133a surrounding the first isolation opening 13a1 on the side facing away from the substrate 11. In this way, when etching the first encapsulation material layer 15a1 and the first light-emitting device material layer 14a1, the risk of peeling or breakage of the first encapsulation material layer 15a1 can be reduced, the encapsulation effect can be improved, the probability of the etching solution causing damage to the first light-emitting device material layer 14a1 and the first electrode portion 121 can be reduced, and the display effect and reliability of the prepared display panel 10 can be improved.

[0086] In some of these embodiments, see Figure 3 and Figure 5AAs shown, the plurality of isolation openings 13a also includes a third initial isolation opening 13a31. The third initial isolation opening 13a31 penetrates the barrier material layer 133a, the main conductive material layer 132a and a portion of the isolation material layer 131a along the thickness direction of the substrate 11. The distance between the bottom wall of the third initial isolation opening 13a31 and the side surface of the first electrode portion 121 away from the substrate 11 is L2, where L2 > L1. In some examples, in S30, a first light-emitting device material layer 14a1 and a first encapsulation material layer 15a1 are sequentially formed on the side of the substrate 11 where the isolation structure layer 13 is provided. The first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 are located in the first isolation opening 13a1, the second initial isolation opening 13a21, the third initial isolation opening 13a31 and the side surface of the isolation structure layer 13 away from the substrate 11.

[0087] See Figure 5B As shown, after removing the first light-emitting device material layer 14a1 and the first encapsulation material layer 15a1 located outside the first isolation opening 13a1 to form a first light-emitting device 14a and a first encapsulation portion 15a that are at least partially located within the first isolation opening 13a1, the method further includes:

[0088] S50. The isolation material layer 131a corresponding to the second initial isolation opening 13a21 is etched to obtain a second isolation opening 13a2 that penetrates the isolation material layer 131a along the thickness direction of the substrate 11, so as to expose the corresponding first electrode portion 121.

[0089] In the above process, by etching the isolation material layer 131a corresponding to the second initial isolation opening 13a21, a second isolation opening 13a2 is obtained that penetrates the isolation material layer 131a along the thickness direction of the substrate 11, exposing the corresponding first electrode portion 121. This allows the subsequent second light-emitting device 14b to directly contact the first electrode portion 121, ensuring the normal light emission of the second light-emitting device 14b. Simultaneously, while etching the isolation material layer 131a corresponding to the second initial isolation opening 13a21, the surface of the first encapsulation portion 15a facing away from the substrate 11, at least a portion of the surface of the barrier material layer 133a facing away from the substrate 11, and the isolation material layer 131a corresponding to the third initial isolation opening 13a31 are also etched. This reduces the thickness of the first encapsulation portion 15a and the thickness of at least a portion of the barrier material layer 133a by approximately L1, making the distance between the bottom wall of the third initial isolation opening 13a31 and the surface of the first electrode portion 121 facing away from the substrate 11 (L2 - L1).

[0090] In some of these embodiments, see Figure 3 and Figure 5BAs shown, after etching the isolation material layer 131a at the corresponding second initial isolation opening 13a21 in step S50, the method further includes:

[0091] S60. A second light-emitting device material layer 14b1 and a second encapsulation material layer 15b1 are sequentially formed on the side of the substrate 11 where the isolation structure layer 13 is provided. The second light-emitting device material layer 14b1 and the second encapsulation material layer 15b1 are located in the second isolation opening 13a2, in the third initial isolation opening 13a31, on the side of the first encapsulation portion 15a away from the substrate 11, and on at least a portion of the surface of the isolation structure layer 13 on the side of the isolation structure layer 13 away from the substrate 11.

[0092] Specifically, the second light-emitting device material layer 14b1 may include a second light-emitting functional material layer and a second conductive material layer. The second light-emitting functional material layer includes a hole injection layer HIL, a hole transport layer HTL, an electron blocking layer EBL, a light-emitting material layer EML, a hole blocking layer HBL, an electron transport layer ETL, and an electron injection layer EIL. The second light-emitting functional material layer may include one light-emitting material layer EML, or a stacked light-emitting structure including multiple light-emitting material layers EML. The second conductive material layer may include a metallic material such as an alloy of magnesium and silver (MgAg).

[0093] S70, the second light-emitting device material layer 14b1 and the second encapsulation material layer 15b1 located outside the second isolation opening 13a2 are removed to form a second light-emitting device 14b and a second encapsulation portion 15b that are at least partially disposed within the second isolation opening 13a2.

[0094] Specifically, the second light-emitting device material layer 14b1 and the second encapsulation material layer 15b1 located outside the second isolation opening 13a2 can be removed using photolithography.

[0095] In the above process, by sequentially forming a second light-emitting device material layer 14b1 and a second encapsulation material layer 15b1 on the side of the substrate 11 where the isolation structure layer 13 is provided, and removing the second light-emitting device material layer 14b1 and the second encapsulation material layer 15b1 located outside the second isolation opening 13a2, since the distance between the bottom wall of the third initial isolation opening 13a31 and the surface of the first electrode portion 121 facing away from the substrate 11 is (L2-L1), that is, the isolation material layer 131a corresponding to the third initial isolation opening 13a31 is not etched through, thus reducing the risk of damage to the first electrode portion 121 corresponding to the third initial isolation opening 13a31, and obtaining at least a partial second light-emitting device 14b and second encapsulation portion 15b disposed in the second isolation opening 13a2, the manufacturing process of the display panel 10 is improved, and the display effect and reliability of the prepared display panel 10 can be improved.

[0096] In some of these embodiments, see Figure 5B As shown, in step S70, the second light-emitting device material layer 14b1 and the second encapsulation material layer 15b1 located outside the second isolation opening 13a2 are removed to form a second light-emitting device 14b and a second encapsulation portion 15b that are at least partially disposed within the second isolation opening 13a2, specifically including:

[0097] Selective etching is performed on the second light-emitting device material layer 14b1 and the second encapsulation material layer 15b1 to retain the second light-emitting device material layer 14b1 and the second encapsulation material layer 15b1 located within the second isolation opening 13a2, as well as the second light-emitting device material layer 14b1 and the second encapsulation material layer 15b1 on a portion of the surface of the barrier material layer 133a surrounding the second isolation opening 13a2 on the side opposite to the substrate 11, to obtain the second light-emitting device 14b and the second encapsulation portion 15b.

[0098] In the above process, by selectively etching the second light-emitting device material layer 14b1 and the second encapsulation material layer 15b1, the second light-emitting device material layer 14b1 and the second encapsulation material layer 15b1 located within the second isolation opening 13a2, as well as the second light-emitting device material layer 14b1 and the second encapsulation material layer 15b1 on the partial surface of the barrier material layer 133a surrounding the second isolation opening 13a2 on the side facing away from the substrate 11, that is to say, the second light-emitting material layer and the second encapsulation material layer 15b1 are not only located within the second isolation opening 13a2, but also on the partial surface of the barrier material layer 133a surrounding the second isolation opening 13a2 on the side facing away from the substrate 11. In this way, when etching the second encapsulation material layer 15b1 and the second light-emitting device material layer 14b1, the risk of peeling or breakage of the second encapsulation material layer 15b1 can be reduced, the encapsulation effect can be improved, the probability of the etching solution causing damage to the second light-emitting device material layer 14b1 and the first electrode portion 121 can be reduced, and the display effect and reliability of the prepared display panel 10 can be improved.

[0099] In some of these embodiments, see Figure 4 and Figure 5C As shown, after removing the second light-emitting device material layer 14b1 and the second encapsulation material layer 15b1 located outside the second isolation opening 13a2 to form a second light-emitting device 14b and a second encapsulation portion 15b at least partially disposed within the second isolation opening 13a2, the method further includes:

[0100] S80. The isolation material layer 131a at the corresponding third initial isolation opening 13a31 is etched to obtain the third isolation opening 13a3 that penetrates the isolation structure layer 13 along the thickness direction of the substrate 11, so as to expose the corresponding first electrode portion 121.

[0101] In the above process, by etching the isolation material layer 131a corresponding to the third initial isolation opening 13a31, a third isolation opening 13a3 penetrating the isolation material layer 131a along the thickness direction of the substrate 11 is obtained to expose the corresponding first electrode portion 121. This allows the subsequent third light-emitting device 14c to directly contact the first electrode portion 121, ensuring the normal light emission of the third light-emitting device 14c. At the same time, while etching the isolation material layer 131a corresponding to the third initial isolation opening 13a31, the surface of the first encapsulation portion 15a facing away from the substrate 11, at least a portion of the surface of the barrier material layer 133a facing away from the substrate 11, and the surface of the second encapsulation portion 15b facing away from the substrate 11 are simultaneously etched. This results in the thickness of the first encapsulation portion 15a and the thickness of at least a portion of the barrier material layer 133a being approximately reduced (L2), and the thickness of the second encapsulation portion 15b being approximately reduced (L2-L1).

[0102] In some of these embodiments, see Figure 4 and Figure 5C As shown, after etching the isolation material layer 131a at the corresponding third initial isolation opening 13a31 in step S80, the method further includes:

[0103] S90. A third light-emitting device material layer 14c1 and a third encapsulation material layer 15c1 are sequentially formed on the side of the substrate 11 where the isolation structure layer 13 is provided. The third light-emitting device material layer 14c1 and the third encapsulation material layer 15c1 are located in the third isolation opening 13a3, on the side of the first encapsulation portion 15a away from the substrate 11, on the side of the second encapsulation portion 15b away from the substrate 11, and on at least a portion of the surface of the blocking material layer 133a away from the substrate 11.

[0104] Specifically, the third light-emitting device material layer 14c1 may include a third light-emitting functional material layer and a third conductive material layer. The third light-emitting functional material layer includes a hole injection layer HIL, a hole transport layer HTL, an electron blocking layer EBL, a light-emitting material layer EML, a hole blocking layer HBL, an electron transport layer ETL, and an electron injection layer EIL. The second light-emitting functional material layer may include one light-emitting material layer EML, or a stacked light-emitting structure including multiple light-emitting material layers EML. The third conductive material layer may include a metallic material such as an alloy of magnesium and silver (MgAg).

[0105] S100, the third light-emitting device material layer 14c1 and the third encapsulation material layer 15c1 located outside the third isolation opening 13a3 are removed to form a third light-emitting device 14c and a third encapsulation portion 15c that are at least partially disposed within the third isolation opening 13a3.

[0106] Specifically, the third light-emitting device material layer 14c1 and the third encapsulation material layer 15c1 located outside the third isolation opening 13a3 can be removed using photolithography.

[0107] In the above process, a third light-emitting device material layer 14c1 and a third encapsulation material layer 15c1 are sequentially formed on the side of the substrate 11 where the isolation structure layer 13 is provided. The third light-emitting device material layer 14c1 and the third encapsulation material layer 15c1 located outside the third isolation opening 13a3 are removed to obtain a third light-emitting device 14c and a third encapsulation portion 15c that are at least partially disposed within the third isolation opening 13a3. The third encapsulation portion 15c can provide encapsulation protection for the third light-emitting device 14c, thereby reducing the risk of damage to the third light-emitting device and improving the display effect and reliability of the prepared display panel 10.

[0108] In some of these embodiments, see Figure 5C As shown, in step S100, the third light-emitting device material layer 14c1 and the third encapsulation material layer 15c1 located outside the third isolation opening 13a3 are removed to form a third light-emitting device 14c and a third encapsulation portion 15c that are at least partially disposed within the third isolation opening 13a3, specifically including:

[0109] Selective etching is performed on the third light-emitting device material layer 14c1 and the third encapsulation material layer 15c1 to retain the third light-emitting device material layer 14c1 and the third encapsulation material layer 15c1 located within the third isolation opening 13a3, as well as the third light-emitting device material layer 14c1 and the third encapsulation material layer 15c1 on a portion of the surface of the barrier material layer 133a surrounding the third isolation opening 13a3 on the side opposite to the substrate 11, to obtain the third light-emitting device 14c and the third encapsulation portion 15c.

[0110] In the above process, by selectively etching the third light-emitting device material layer 14c1 and the third encapsulation material layer 15c1, the third light-emitting device material layer 14c1 and the third encapsulation material layer 15c1 located within the third isolation opening 13a3, as well as the third light-emitting device material layer 14c1 and the third encapsulation material layer 15c1 on the partial surface of the barrier material layer 133a surrounding the third isolation opening 13a3 on the side facing away from the substrate 11, that is to say, the third light-emitting material layer and the third encapsulation material layer 15c1 are not only located within the third isolation opening 13a3, but also on the partial surface of the barrier material layer 133a surrounding the third isolation opening 13a3 on the side facing away from the substrate 11. In this way, when etching the third encapsulation material layer 15c1 and the third light-emitting device material layer 14c1, the risk of peeling or breakage of the third encapsulation material layer 15c1 can be reduced, the encapsulation effect can be improved, the probability of the etching solution causing damage to the third light-emitting device material layer 14c1 and the first electrode portion 121 can be reduced, and the display effect and reliability of the prepared display panel 10 can be improved.

[0111] Secondly, see Figure 6 As shown, this application embodiment provides a display panel 10, including a substrate 11, a first electrode layer 12, an isolation structure layer 13, a plurality of light-emitting devices 14, and a plurality of encapsulation portions 15; the first electrode layer 12 is disposed on one side of the substrate 11, and the first electrode layer 12 includes a plurality of first electrode portions 121 spaced apart; the isolation structure layer 13 covers the gap between each of the first electrode portions 121, and the isolation structure layer 13 has a plurality of isolation openings 13a corresponding to the plurality of first electrode portions 121, the isolation openings 13a exposing at least a portion of the corresponding first electrode portion 121; the plurality of isolation openings 13a include first isolation openings. 13a1 and a second isolation opening 13a2; a plurality of light-emitting devices 14 including a first light-emitting device 14a and a second light-emitting device 14b; the first light-emitting device 14a is disposed in the first isolation opening 13a1, and the second light-emitting device 14b is disposed in the second isolation opening 13a2; a plurality of encapsulation portions 15 including a first encapsulation portion 15a and a second encapsulation portion 15b, the first encapsulation portion 15a is disposed on the side of the first light-emitting device 14a away from the substrate 11, and the second encapsulation portion 15b is located on the side of the second light-emitting device 14b away from the substrate 11; the thickness of the second encapsulation portion 15b is greater than the thickness of the first encapsulation portion 15a.

[0112] The display panel 10 provided in this application embodiment can be prepared by any one of the methods in the first aspect. During the preparation of the display panel 10, a plurality of isolation openings 13a are formed on the isolation structure layer 13. The plurality of isolation openings 13a include a first isolation opening 13a1 and a second initial isolation opening 13a21. The first isolation opening 13a1 penetrates the isolation material layer 131a along the thickness direction of the substrate 11 to expose the corresponding first electrode portion 121. The second initial isolation opening 13a21 penetrates a portion of the isolation material layer 131a along the thickness direction of the substrate 11. The distance between the bottom wall of the second initial isolation opening 13a21 and the side surface of the first electrode portion 121 facing away from the substrate 11 is L1. During the fabrication of the first electrode portion 121… When the light-emitting device 14a and the first package 15a are fabricated, the isolation material layer 131a at the second initial isolation opening 13a21 can act as a mask to protect the first electrode 121 below, reducing the probability of damage to the first electrode 121. After the fabrication of the first light-emitting device 14a and the first package 15a is completed, the isolation material layer 131a at the second initial isolation opening 13a21 is etched to obtain a second isolation structure that penetrates the isolation structure layer 13 along the thickness direction of the substrate 11. At the same time, the thickness of the first package 15a is reduced. Then the second light-emitting device 14b and the second package 15b are fabricated. At this time, the thickness of the second package 15b is greater than the thickness of the first package 15a. In other words, by making the thickness of the second encapsulation portion 15b greater than the thickness of the first encapsulation portion 15a, this application allows the first isolation opening 13a1 to penetrate the isolation material layer 131a along the thickness direction of the substrate 11 during the fabrication of the display panel 10. The second initial isolation opening 13a21 also penetrates a portion of the isolation material layer 131a along the thickness direction of the substrate 11. The distance between the bottom wall of the second initial isolation opening 13a21 and the side surface of the first electrode portion 121 facing away from the substrate 11 is L1. This reduces the risk of damage to the first electrode portion 121 during fabrication and improves the display effect and reliability of the display panel 10.

[0113] It should be noted that the materials used in the packaging include inorganic materials.

[0114] In some examples, the difference between the thickness of the second package portion 15b and the thickness of the first package portion 15a can be equal to L1. Of course, when there are differences in film thickness and film quality between the first package portion 15a and the second package portion 15b, and under the influence of factors such as etching errors, the difference between the thickness of the second package portion 15b and the thickness of the first package portion 15a can be greater than L1 or less than L1.

[0115] In some of these embodiments, see Figure 6As shown, the isolation structure includes an isolation portion 131, a conductive portion 132, and a blocking portion 133 stacked sequentially along the direction away from the substrate 11. The outer contour of the orthographic projection of the blocking portion 133 on the substrate 11 is located outside the outer contour of the orthographic projection of the surface of the conductive portion 132 near the blocking portion 133 on the substrate 11. The orthographic projection of the isolation portion 131 on the substrate 11 covers the gap between each adjacent first electrode portion 121, and the orthographic projection of the isolation portion 131 on the substrate 11 overlaps with the orthographic projection of the first electrode portion 121 on the substrate 11. The light-emitting device 14 includes a light-emitting functional portion 141 and a second electrode portion 142 stacked sequentially along one side away from the substrate 11. The light-emitting functional portion 141 and the conductive portion 132 have a gap, and the second electrode portion 142 is electrically connected to the conductive portion 132.

[0116] In some examples, the orthographic projection of the isolation portion 131 on the substrate 11 covers the orthographic projection of the conductive portion 132 on the substrate 11;

[0117] Thus, by making the orthographic projection of the isolation portion 131 on the substrate 11 cover the orthographic projection of the conductive portion 132 on the substrate 11, and the orthographic projection of the isolation portion 131 on the substrate 11 cover the gap between each adjacent first electrode portion 121, and the orthographic projection of the isolation portion 131 on the substrate 11 overlaps with the orthographic projection of the first electrode portion 121 on the substrate 11, the first electrode portion 121 and the conductive portion 132 can be separated by the isolation portion 131, ensuring that the first electrode portion 121 and the conductive portion 132 are insulated from each other, and that adjacent first electrode portions 121 are insulated from each other. By positioning the outer contour of the orthographic projection of the blocking portion 133 on the substrate 11 outside the outer contour of the orthographic projection of the conductive portion 132 near the blocking portion 133 on the substrate 11, that is, by controlling the degree of concavity of the conductive portion 132 relative to the blocking portion 133 and the tilt angle of the sidewall of the conductive portion 132 near the isolation opening 13a, the light-emitting functional portions 141 are separated from each other on different sides of the isolation structure 13, with a gap between the light-emitting functional portions 141 and the conductive portion 132, and the second electrode portion 142 overlaps with the conductive portion 132. This improves color mixing while enabling electrical connection between adjacent second electrode portions, thereby improving the uniformity of the brightness of the displayed image on the display panel 10 and enhancing the display quality of the display panel 10.

[0118] It should be noted that the second electrode section 142 can be a cathode.

[0119] In some of these embodiments, see Figure 6As shown, the first encapsulation portion 15a covers the side of the first light-emitting device 14a away from the substrate 11 and the sidewall of the isolation structure near the first isolation opening 13a1, and extends to the side of the blocking portion 133 away from the substrate 11; the display panel 10 also includes a first light-emitting device material layer 14a1, which is located between the surface of the blocking portion 133 away from the substrate 11 and the first encapsulation portion 15a.

[0120] In this way, the encapsulation effect of the first packaging part 15a on the first light-emitting device 14a can be improved, the risk of damage to the first light-emitting device 14a and the corresponding first electrode part 121 can be reduced, and the display effect and reliability of the display panel 10 can be improved.

[0121] In some of these embodiments, see Figure 6 and Figure 7 As shown, the second encapsulation portion 15b covers the side of the second light-emitting device 14b away from the substrate 11 and the sidewall of the isolation structure near the second isolation opening 13a2, and extends to the side of the blocking portion 133 away from the substrate 11; the second encapsulation portion 15b is connected to the first encapsulation portion 15a, and the display panel 10 also includes a second light-emitting device material layer 14b1, which is located between the surface of the blocking portion 133 away from the substrate 11 and the second encapsulation portion 15b; the distance between the surface of the blocking portion 133 in contact with the first light-emitting device material layer 14a1 and the substrate 11 is H1, and the distance between the surface of the blocking portion 133 in contact with the second light-emitting device material layer 14b1 and the substrate 11 is H2; H1 > H2.

[0122] In this way, the encapsulation effect of the second packaging section 15b on the second light-emitting device 14b can be improved, the risk of damage to the second light-emitting device 14b and the corresponding first electrode section 121 can be reduced, and the display effect and reliability of the display panel 10 can be improved.

[0123] In some examples, H1-H2 can be equal to L1. Of course, when the film thickness and film quality of the blocking part 133 differ at different locations, and under the influence of factors such as etching error, H1-H2 can be greater than L1 or less than L1.

[0124] In some of these embodiments, see Figure 6 As shown, the plurality of isolation openings 13a also includes a third isolation opening 13a3, the plurality of light-emitting devices 14 also includes a third light-emitting device 14c, the third light-emitting device 14c is disposed in the third isolation opening 13a3; the plurality of encapsulation portions 15 include a third encapsulation portion 15c, the third encapsulation portion 15c is located on the side of the third light-emitting device 14c away from the substrate 11, and the thickness of the third encapsulation portion 15c is greater than the thickness of the second encapsulation portion 15b.

[0125] Thus, by making the thickness of the third encapsulation portion 15c greater than the thickness of the second encapsulation portion 15b, the probability of damage to the first electrode portion 121 corresponding to the third isolation opening 13a3 during the manufacturing process can be reduced. At the same time, the third encapsulation portion 15c can provide reliable encapsulation for the third light-emitting device 14c, reducing the probability of damage to the third light-emitting device 14c, thereby improving the display effect and reliability of the display panel 10.

[0126] In some examples, the difference between the thickness of the third packaging portion 15c and the thickness of the second packaging portion 15b is equal to (L2-L1). Of course, when there are differences in film thickness and film quality between the second packaging portion 15b and the third packaging portion 15c, and under the influence of factors such as etching errors, the difference between the thickness of the second packaging portion 15b and the thickness of the first packaging portion 15a can be greater than (L2-L1) or less than (L2-L1).

[0127] In some of these embodiments, see Figure 6 and Figure 7 As shown, the third encapsulation portion 15c covers the side of the third light-emitting device 14c away from the substrate 11 and the sidewall of the isolation structure near the third isolation opening 13a3, and extends to the side of the blocking portion 133 away from the substrate 11; the third encapsulation portion 15c is connected to the first encapsulation portion 15a and the second encapsulation portion 15b; the display panel 10 also includes a third light-emitting device material layer 14c1, which is located between the surface of the blocking portion 133 away from the substrate 11 and the third encapsulation portion 15c; the distance between the surface of the blocking portion 133 in contact with the third light-emitting device material layer 14c1 and the substrate 11 is H3, where H2 > H3.

[0128] In this way, the encapsulation effect of the third packaging section 15c on the third light-emitting device 14c can be improved, the risk of damage to the third light-emitting device 14c and the corresponding first electrode section 121 can be reduced, and the display effect and reliability of the display panel 10 can be improved.

[0129] In some examples, H2-H3 can be equal to (L2-L1). Of course, when the film thickness and film quality of the blocking part 133 differ at different locations, and under the influence of factors such as etching error, H2-H3 can be greater than (L2-L1) or less than (L2-L1).

[0130] Thirdly, embodiments of this application provide a display device, including a display panel 10 prepared by a method for preparing a display panel 10 according to any one of the first aspects, or a display panel 10 according to any one of the second aspects.

[0131] The display device may be, but is not limited to, a mobile phone, tablet computer, laptop computer, desktop monitor, television, and head-mounted display devices such as AR (Augmented Reality) glasses, VR (Virtual Reality) glasses, and MR (Mixed Reality) glasses. The specific structure of the display panel 10 in the display device is as described in the above embodiments. Since the display device proposed in this application adopts all the technical solutions of all the above embodiments, it possesses at least all the beneficial effects brought about by the technical solutions of the above embodiments, and will not be elaborated upon here.

[0132] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0133] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for manufacturing a display panel, characterized in that, include: A first electrode layer is formed on one side of a substrate, the first electrode layer including a plurality of first electrode portions spaced apart; An isolation structure layer is formed on the side of the substrate where the first electrode layer is provided, and a plurality of isolation openings corresponding to the plurality of first electrode portions are formed on the isolation structure layer; The isolation structure layer includes an isolation material layer; the plurality of isolation openings include a first isolation opening and a second initial isolation opening, wherein the first isolation opening penetrates the isolation material layer along the thickness direction of the substrate to expose the corresponding first electrode portion; The second initial isolation opening penetrates a portion of the isolation material layer along the thickness direction of the substrate, and the distance between the bottom wall of the second initial isolation opening and the side surface of the first electrode portion away from the substrate is L1; A first light-emitting device material layer and a first encapsulation material layer are sequentially formed on the side of the substrate where the isolation structure layer is provided. The first light-emitting device material layer and the first encapsulation material layer are located within the plurality of isolation openings and on the side surface of the isolation structure layer opposite to the substrate. The first light-emitting device material layer and the first encapsulation material layer located outside the first isolation opening are removed to form a first light-emitting device and a first encapsulation portion located at least partially within the first isolation opening.

2. The method for manufacturing a display panel according to claim 1, characterized in that, The step of forming an isolation structure layer on one side of the substrate where the first electrode layer is provided, and forming a plurality of isolation openings on the isolation structure layer corresponding to the plurality of first electrode portions, includes: An isolation material layer, a main conductive material layer, and a barrier material layer are sequentially formed on the side of the substrate where the first electrode layer is provided, to obtain an isolation structure layer; Multiple isolation openings corresponding to the plurality of first electrode portions are formed on the isolation structure layer. The plurality of isolation openings include a first isolation opening and a second initial isolation opening. The first isolation opening penetrates the barrier material layer, the main conductive material layer and the isolation material layer along the thickness direction of the substrate to expose the corresponding first electrode portion. The second initial isolation opening penetrates the barrier material layer, the main conductive material layer and a portion of the isolation material layer along the thickness direction of the substrate. The distance between the bottom wall of the second initial isolation opening and the side surface of the first electrode portion facing away from the substrate is L1. The orthographic projection of the barrier material layer on the substrate is located outside the orthographic projection of the surface of the main conductive material layer near the barrier material layer on the substrate.

3. The method for manufacturing a display panel according to claim 2, characterized in that, The step of removing the first light-emitting device material layer and the first encapsulation material layer located outside the first isolation opening to form a first light-emitting device and a first encapsulation portion located at least partially within the first isolation opening includes: Selective etching is performed on the first light-emitting device material layer and the first encapsulation material layer to retain the first light-emitting device material layer and the first encapsulation material layer located within the first isolation opening, as well as the first light-emitting device material layer and the first encapsulation material layer on at least a portion of the surface of the barrier material layer surrounding the first isolation opening on the side away from the substrate, to obtain the first light-emitting device and the first encapsulation portion.

4. The method for manufacturing a display panel according to claim 2 or 3, characterized in that, The plurality of isolation openings also includes a third initial isolation opening, which penetrates the barrier material layer, the main conductive material layer and part of the isolation material layer along the thickness direction of the substrate. The distance between the bottom wall of the third initial isolation opening and the side surface of the first electrode portion away from the substrate is L2, where L2 > L1. After the step of removing the first light-emitting device material layer and the first encapsulation material layer located outside the first isolation opening to form a first light-emitting device and a first encapsulation portion located at least partially within the first isolation opening, the method further includes: The isolation material layer corresponding to the second initial isolation opening is etched to obtain a second isolation opening that penetrates the isolation material layer along the thickness direction of the substrate, thereby exposing the corresponding first electrode portion.

5. The method for manufacturing a display panel according to claim 4, characterized in that, After the step of etching the isolation material layer corresponding to the second initial isolation opening, the method further includes: A second light-emitting device material layer and a second encapsulation material layer are sequentially formed on the side of the substrate where the isolation structure layer is provided. The second light-emitting device material layer and the second encapsulation material layer are located in the second isolation opening, in the third initial isolation opening, on the side of the first encapsulation portion away from the substrate, and on at least a portion of the surface of the isolation structure layer on the side away from the substrate. The second light-emitting device material layer and the second encapsulation material layer located outside the second isolation opening are removed to form a second light-emitting device and a second encapsulation portion that are at least partially disposed within the second isolation opening.

6. The method for manufacturing a display panel according to claim 5, characterized in that, The step of removing the second light-emitting device material layer and the second encapsulation material layer located outside the second isolation opening to form a second light-emitting device and a second encapsulation portion at least partially disposed within the second isolation opening includes: Selective etching is performed on the second light-emitting device material layer and the second encapsulation material layer to retain the second light-emitting device material layer and the second encapsulation material layer located within the second isolation opening, as well as the second light-emitting device material layer and the second encapsulation material layer on a portion of the surface of the barrier material layer facing away from the substrate around the second isolation opening, thereby obtaining the second light-emitting device and the second encapsulation portion.

7. The method for manufacturing a display panel according to claim 5, characterized in that, After removing the second light-emitting device material layer and the second encapsulation material layer located outside the second isolation opening to form a second light-emitting device and a second encapsulation portion at least partially disposed within the second isolation opening, the method further includes: The isolation material layer corresponding to the third initial isolation opening is etched to obtain a third isolation opening that penetrates the isolation structure layer along the thickness direction of the substrate, thereby exposing the corresponding first electrode portion.

8. The method for manufacturing a display panel according to claim 7, characterized in that, After the step of etching the isolation material layer corresponding to the third initial isolation opening, the method further includes: A third light-emitting device material layer and a third encapsulation material layer are sequentially formed on the side of the substrate where the isolation structure layer is provided. The third light-emitting device material layer and the third encapsulation material layer are located in the third isolation opening, on the side of the first encapsulation portion away from the substrate, on the side of the second encapsulation portion away from the substrate, and on at least a portion of the surface of the barrier material layer away from the substrate. The third light-emitting device material layer and the third encapsulation material layer located outside the third isolation opening are removed to form a third light-emitting device and a third encapsulation portion that are at least partially disposed within the third isolation opening.

9. The method for manufacturing a display panel according to claim 8, characterized in that, The step of removing the third light-emitting device material layer and the third encapsulation material layer located outside the third isolation opening to form a third light-emitting device and a third encapsulation portion at least partially disposed within the third isolation opening includes: Selective etching is performed on the third light-emitting device material layer and the third encapsulation material layer to retain the third light-emitting device material layer and the third encapsulation material layer located within the third isolation opening, as well as the third light-emitting device material layer and the third encapsulation material layer on a portion of the surface of the barrier material layer surrounding the third isolation opening that faces away from the substrate, thereby obtaining a third light-emitting device and a third encapsulation portion.

10. A display panel, characterized in that, The display panel is prepared using the method described in any one of claims 1-9, and comprises: substrate; A first electrode layer is disposed on one side of the substrate, and the first electrode layer includes a plurality of first electrode portions disposed at intervals. An isolation structure layer covers the gap between the first electrode portions, and the isolation structure layer has a plurality of isolation openings corresponding to the plurality of first electrode portions, the isolation openings exposing at least a portion of the first electrode portion; the plurality of isolation openings include a first isolation opening and a second isolation opening. Multiple light-emitting devices, including a first light-emitting device and a second light-emitting device; the first light-emitting device is disposed within the first isolation opening, and the second light-emitting device is disposed within the second isolation opening; The plurality of encapsulation portions include a first encapsulation portion and a second encapsulation portion. The first encapsulation portion is disposed on the side of the first light-emitting device away from the substrate, and the second encapsulation portion is located on the side of the second light-emitting device away from the substrate. The thickness of the second encapsulation portion is greater than the thickness of the first encapsulation portion.

11. The display panel according to claim 10, characterized in that, The isolation structure layer includes an isolation portion, a conductive portion, and a blocking portion stacked sequentially in a direction away from the substrate. The outer contour of the orthographic projection of the blocking portion on the substrate is located outside the outer contour of the orthographic projection of the conductive portion near the blocking portion on the substrate. The orthographic projection of the isolation portion on the substrate covers the gap between each adjacent first electrode portion, and the orthographic projection of the isolation portion on the substrate overlaps with the orthographic projection of the first electrode portion on the substrate; The light-emitting device includes a light-emitting functional part and a second electrode part stacked sequentially along a side away from the substrate. The light-emitting functional part and the conductive part have a gap, and the second electrode part is electrically connected to the conductive part.

12. The display panel according to claim 11, characterized in that, The first encapsulation portion covers the side of the first light-emitting device away from the substrate and the sidewall of the isolation structure layer near the first isolation opening, and extends to the side of the blocking portion away from the substrate. The display panel further includes a first light-emitting device material layer, which is located between the side surface of the blocking portion facing away from the substrate and the first encapsulation portion.

13. The display panel according to claim 12, characterized in that, The second encapsulation portion covers the side of the second light-emitting device away from the substrate and the sidewall of the isolation structure layer near the second isolation opening, and extends to the side of the blocking portion away from the substrate; The display panel further includes a second light-emitting device material layer, which is located between the side surface of the blocking portion facing away from the substrate and the second encapsulation portion; The distance between the surface of the blocking portion that contacts the first light-emitting device material layer and the substrate is H1, and the distance between the surface of the blocking portion that contacts the second light-emitting device material layer and the substrate is H2; H1 > H2.

14. The display panel according to claim 13, characterized in that, The plurality of isolation openings further includes a third isolation opening, and the plurality of light-emitting devices further includes a third light-emitting device disposed within the third isolation opening; the plurality of encapsulation portions include a third encapsulation portion, which is located on the side of the third light-emitting device away from the substrate, and the thickness of the third encapsulation portion is greater than the thickness of the second encapsulation portion.

15. The display panel according to claim 14, characterized in that, The third encapsulation portion covers the side of the third light-emitting device away from the substrate and the sidewall of the isolation structure layer near the third isolation opening, and extends to the side of the blocking portion away from the substrate. The display panel further includes a third light-emitting device material layer, which is located between the side surface of the blocking portion facing away from the substrate and the third encapsulation portion; The distance between the surface of the blocking portion that contacts the third light-emitting device material layer and the substrate is H3, where H2 > H3.

16. A display device, characterized in that, This includes a display panel prepared by the method for preparing a display panel according to any one of claims 1 to 9, or a display panel according to any one of claims 10 to 15.