Optoelectronic device and method of manufacturing the same

Abstract

The application discloses a photoelectric device and a preparation method thereof. The photoelectric device disclosed by the application comprises an interface layer. The existence of the interface layer can solve the problem that a hole functional layer and a light-emitting layer are easily damaged during device aging, thereby enabling the photoelectric device to have a long service life and other performances.

Description

Technical Field

[0001] This application relates to the field of optoelectronic device technology, and in particular to an optoelectronic device and its fabrication method. Background Technology

[0002] Currently, the most widely used light-emitting devices are organic light-emitting devices (OLEDs) and quantum dot light-emitting devices (QLEDs). OLEDs have become the mainstream technology in the display field due to their superior display performance, including self-illumination, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display capabilities. QLEDs offer advantages such as saturated emitted light color, tunable wavelength, low turn-on voltage, good solution processability, and easy precise control of quantum dots. Furthermore, they boast high quantum yields in both photoluminescence and electroluminescence, making them a strong competitor to OLEDs in recent years.

[0003] Traditional OLED and QLED device structures generally include an anode, a hole injection layer, a hole transport layer, a light-emitting functional layer, an electron functional layer, an electron injection layer, and a cathode. Under the influence of an electric field, holes generated at the anode and electrons generated at the cathode move and are injected into the hole transport layer and electron functional layer, respectively, and eventually migrate to the light-emitting functional layer. When the two meet in the light-emitting functional layer, they generate excitons, which excite the light-emitting molecules to ultimately produce visible light.

[0004] However, the lifespan of existing light-emitting devices is relatively short and needs further improvement. Summary of the Invention

[0005] In view of this, this application provides an optoelectronic device and a method for fabricating the same.

[0006] In a first aspect, this application provides a method for fabricating an optoelectronic device, comprising the following steps:

[0007] An anode is provided, on which a pre-formed hole functional layer is formed, the material of the pre-formed hole functional layer comprising a P-type semiconductor material having fluorene groups;

[0008] A compound with unsaturated bonds is provided, and the compound with unsaturated bonds is disposed on the pre-fabricated hole functional layer to form an auxiliary layer, thereby obtaining a photoelectric device preform;

[0009] A positive bias voltage is applied to the optoelectronic device preform, and the auxiliary layer is subjected to plasma treatment using negatively charged plasma. This causes the P-type semiconductor material with fluorene groups at the interface between the preformed hole functional layer and the auxiliary layer to react with a compound with unsaturated bonds to form a cross-linked structure, resulting in a stacked hole functional layer and an interface layer. The hole functional layer includes the P-type semiconductor material with fluorene groups, and the interface layer includes a cross-linked structure formed by the reaction of the P-type semiconductor material with fluorene groups and a compound with unsaturated bonds.

[0010] A light-emitting layer and a cathode are sequentially formed on the interface layer to obtain an optoelectronic device.

[0011] Secondly, this application also provides an optoelectronic device, comprising a stacked anode, a hole functional layer, an interface layer, a light-emitting layer, and a cathode, wherein the hole functional layer comprises a P-type semiconductor material having fluorene groups, and the interface layer comprises a cross-linked structure formed by the reaction of a P-type semiconductor material having fluorene groups and a compound having unsaturated bonds.

[0012] The optoelectronic devices prepared by the method described in this application have properties such as long lifespan. Attached Figure Description

[0013] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0014] Figure 1 This is a flowchart illustrating a method for fabricating an optoelectronic device according to an embodiment of this application;

[0015] Figure 2 This is a schematic diagram of the structure of an optoelectronic device provided in an embodiment of this application.

[0016] Figure Labels

[0017] Optoelectronic device 100; anode 10; hole functional layer 20; interface layer 30; light-emitting layer 40; cathode 50; electronic functional layer 60. Detailed Implementation

[0018] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0019] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0020] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0021] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0022] In this application, the term "on" forming another layer on a certain layer is a broad concept. It can mean that the formed other layer is adjacent to a certain layer, or it can mean that there are other spacer structures between the other layer and the certain layer. For example, when a second electrode is formed "on" a first charge carrier functional layer, the term "on" can mean that the formed second electrode is adjacent to the first charge carrier functional layer, or it can mean that there are other spacer structures between the second electrode and the first charge carrier functional layer, such as a light-emitting layer.

[0023] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0024] In this application, "substitution" means that the hydrogen atom in the substituent is replaced by the substituent. "Substituted or unsubstituted" means that the defined group may or may not be substituted. It is understood that when the group is substituted by a substituent, the number of substituents may be one, two, three or more, and when the number of substituents is two or more, the substituents may be the same or different.

[0025] In this application, "ring atom number" refers to the number of ring atoms constituting the ring itself in a cyclic compound (e.g., a monocyclic or polycyclic compound) obtained by atomic bonding, i.e., the number of atoms forming the ring. When the ring is substituted by a substituent, the atoms contained in the substituent are not included in the ring atom count. The same applies to the "ring atom number" described below unless otherwise specified. For example, the benzene ring has 6 ring atoms, the naphthalene ring has 10 ring atoms, and the thiophene group has 5 ring atoms.

[0026] In this application, "aryl or aromatic group" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl, and for polycyclic rings, at least one of them is an aromatic ring system. For example, "substituted or unsubstituted aryl having 6 to 60 ring atoms" refers to an aryl containing 6 to 60 ring atoms, preferably a substituted or unsubstituted aryl having 6 to 30 ring atoms, more preferably a substituted or unsubstituted aryl having 6 to 18 ring atoms, and particularly preferably a substituted or unsubstituted aryl having 6 to 14 ring atoms, and optionally further substituted on the aryl group; suitable examples include, but are not limited to: phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthrene, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl and their derivatives. It is understandable that multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl. "Arylidene" refers to a group derived from an aryl group by removing one more hydrogen atom.

[0027] In this application, "heteroaryl or heteroaromatic group" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom, which can be an N atom, O atom, S atom, Si atom, P atom, etc. For example, "substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms" refers to a heteroaryl group having 5 to 60 ring atoms, preferably a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl group having 5 to 18 ring atoms, and particularly preferably a substituted or unsubstituted heteroaryl group having 5 to 14 ring atoms, and the heteroaryl group may optionally be further substituted; suitable examples include, but are not limited to: thiophene, furanyl, pyrrole, diazolyl, triazolyl, imidazole, pyridyl, bipyridyl, pyrimidinyl, etc. Triazinyl, acridineyl, pyridazinyl, pyrazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridinopyrimidineyl, pyridinopyrazinyl, benzothiopheneyl, benzofuranyl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienothienopheneyl, furanolopyrrolyl, furanolofuranyl, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, o-diazonyl, phenanthridineyl, primidyl, quinazolinoneyl, dibenzothiopheneyl, dibenzofuranyl, carbazoleyl and their derivatives. "Heteroarylene" refers to a group derived from a heteroarylene group by removing one hydrogen atom.

[0028] In this application, "alkyl" can mean straight-chain, branched, and / or cyclic alkyl. The number of carbon atoms in an alkyl group can be 1 to 30, 1 to 25, 1 to 20, 1 to 15, 1 to 10, or 1 to 6. Phrases containing this term, such as "C 1-9"Alkyl" refers to an alkyl group containing 1 to 9 carbon atoms, and each time it appears, it can independently be C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, etc. "Alkylene" refers to a group derived from an alkyl group by removing one more hydrogen atom.

[0029] In this application, "alkoxy" refers to a group with the structure "-O-alkyl", that is, an alkyl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), tert-butoxy (-OC(CH3)3 or -OtBu), and n-hexyloxy (-O-C6H). 13 ), n-decanoyloxy (-OC) 10 H 21 ), n-dodecyloxy (-OC) 12 H 25 ).

[0030] In this application, "alkyl carbonyl" refers to a structure with the following structure: The group, "alkoxycarbonyl", refers to the structure with The group. Where R represents an alkyl group, C1 to C2. 30 C1 to C1 of alkyl carbonyl groups 30 The number of carbon atoms in the entire group.

[0031] In this application, "aryloxy" refers to a group with the structure "-O-aryl", that is, an aryl group as defined above is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to, phenoxy, naphthoxy, etc. "Heteroaryloxy" refers to a group with the structure "-O-heteroaryl", that is, a heteroaryl group as defined above is attached to other groups via an oxygen atom. "Alkoxyaryl" refers to a group with the structure "-aryl-alkoxy", that is, an alkoxy group as defined above is attached to other groups via an aryl group; for example, hexyloxyphenyl represents -ph-OC6H. 13 , where ph refers to phenyl.

[0032] In this application, "combination of multiple (groups)" includes all suitable combinations of any two or more of the listed items. For example, it may refer to the substitution of one hydrogen atom in one group by one or more groups; for instance, a combination of alkyl and mercapto may be "-S-alkyl," meaning that the alkyl group as defined above is linked to other groups via a sulfur atom. Suitable examples of phrases containing this term include, but are not limited to: methylthio (-S-CH3 or -SMe), ethylthio (-S-CH2CH3 or -SEt), tert-butylthio (-SC(CH3)3 or -StBu), and n-hexanethio (-S-C6H). 13 ), n-Decadecylthio (-SC) 10 H 21 ), n-Dodecylthio (-SC) 12 H 25 Similarly, the combination of aryl and mercapto groups can be "-S-aryl".

[0033] In this application, amino represents -NR 1 R 2 , where R 1 R 2 Each group can be represented independently by H or an alkyl group; that is, the amino group can be -NH2, -NH (alkyl), or -N alkyl (alkyl). The secondary amino group can be -NR. 1 -

[0034] In this application, "halogen group" represents -Cl, -Br, -F or -I; hydroxyl group represents -OH; carboxyl group represents -COOH; nitro group represents -NO2; sulfonic acid group represents -SO3H; mercapto group represents -SH; cyano group represents *-C≡N.

[0035] It should be noted that the thickness of the film in this application was measured using a step tester, and the average particle size in this application was measured using a transmission electron microscope (TEM).

[0036] In related technologies, the hole functional layer material, while continuously transporting holes, undergoes reduction / oxidation due to the loss or gain of some electrons, resulting in an unstable state. When the hole functional layer material is in an unstable state, it is prone to cross-linking with the surface ligands of quantum dots in the emissive layer. This can lead to bonding between the ligands and the active groups of the hole functional layer material. While this can promote hole injection to some extent, it also reduces conductive π bonds, affecting transport performance, causing hole interface accumulation, and impacting interface stability. On the other hand, ligands are easily detached due to interaction with active groups, leading to an increase in surface defects of quantum dots at the interface between the hole functional layer and the emissive layer, thereby affecting device performance. In view of this, this application proposes an optoelectronic device, its fabrication method, and a display device, aiming to solve the problem that the hole functional layer and emissive layer are easily damaged during device aging, thus affecting the device's light-emitting performance.

[0037] The technical solution of this application is as follows:

[0038] Firstly, please refer to Figure 1 and Figure 2 This application provides a method for fabricating an optoelectronic device, comprising the following steps:

[0039] Step S11: Provide an anode 10 and form a pre-prepared hole functional layer on the anode 10. The material of the pre-prepared hole functional layer includes a P-type semiconductor material with fluorene groups.

[0040] Step S12: Provide a compound with unsaturated bonds, and place the compound with unsaturated bonds on the pre-fabricated hole functional layer to form an auxiliary layer, thereby obtaining a photoelectric device preform;

[0041] Step S13: Apply a positive bias voltage to the optoelectronic device preform and perform plasma treatment on the auxiliary layer using negatively charged plasma, so that the P-type semiconductor material with fluorene groups at the interface between the preformed hole functional layer and the auxiliary layer reacts with a compound with unsaturated bonds to form a cross-linked structure, thereby obtaining a stacked hole functional layer 20 and an interface layer 30, wherein the hole functional layer 20 includes the P-type semiconductor material with fluorene groups, and the interface layer 30 includes a cross-linked structure formed by the reaction of the P-type semiconductor material with fluorene groups and a compound with unsaturated bonds;

[0042] Step S14: A light-emitting layer 40 and a cathode 50 are sequentially formed on the interface layer 30 to obtain an optoelectronic device 100.

[0043] The method for fabricating the optoelectronic device described in this application involves forming an auxiliary layer on the pre-fabricated hole functional layer, and then simulating an energized state by applying a forward bias and plasma treatment. This causes the P-type semiconductor material with fluorene groups at the interface between the pre-fabricated hole functional layer and the auxiliary layer to react with a compound with unsaturated bonds to form a cross-linked structure. This activates the P-type semiconductor material with fluorene groups on at least the side of the pre-fabricated hole functional layer away from the anode, forming a stable structure. This avoids problems such as reduced conductive π bonds and increased defects on the quantum dot surface caused by the reaction between the P-type semiconductor material with fluorene groups on the hole functional layer surface and the ligands with unsaturated bonds on the quantum dot surface of the light-emitting layer during the operation of the optoelectronic device, thereby effectively improving the brightness, efficiency, and lifetime performance of the optoelectronic device 100.

[0044] It should be noted that applying a positive bias voltage to the optoelectronic device preform can make the P-type semiconductor material with fluorene groups positively charged, and using negatively charged plasma for plasma treatment, combined with an auxiliary layer with insulating properties, can form an electric field similar to a capacitor structure between the positively charged P-type semiconductor material with fluorene groups, the insulating auxiliary layer and the negatively charged plasma, thereby simulating an energized state.

[0045] In step S11:

[0046] The pre-fabricated hole functional layer can be one or more of a pre-fabricated hole injection layer and a pre-fabricated hole transport layer. It can be understood that when the pre-fabricated hole functional layer is a pre-fabricated hole injection layer, the corresponding hole functional layer is a hole injection layer; and when the pre-fabricated hole functional layer is a pre-fabricated hole transport layer, the corresponding hole functional layer is a hole transport layer.

[0047] It is understood that when the pre-fabricated hole functional layer is a pre-fabricated hole transport layer, forming the pre-fabricated hole functional layer on the anode 10 includes: sequentially forming a stacked hole injection layer and a pre-fabricated hole transport layer on the anode 10. It is understood that the material of the hole injection layer can be a known material used for hole injection layers in optoelectronic devices, for example, it can include, but is not limited to, one or more of P-type inorganic particles and P-type organic materials. The P-type inorganic particles include, but are not limited to, one or more of second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles are each independently including, but not limited to, one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping elements in the second doped metal oxide particles include, but are not limited to, one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include, but are not limited to, one or more of CuS, MoS3, and WS3. The metal selenides include, but are not limited to, one or more of MoSe3 and WSe3. The metal nitrides include, but are not limited to, p-type gallium nitride. The p-type organic semiconductor material can be selected from, but is not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)biphenylamine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbiphenylamine (D NTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiroNPB, poly(phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,[4-Phenylacetene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spiro-omeTAD, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazole-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p)phenylene ether, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazole)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethyl methacrylate The following are included: esters and their derivatives; poly(9,9-octylfluorene) and its derivatives; poly(spirofluorene) and its derivatives; 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (HAT-CN); PEDOT; PEDOT:PSS; PEDOT:PSS derivatives doped with s-MoO3 (PEDOT:PSS:s-MoO3); 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA); tetracyanoquinone dimethylane (F4-TCQN); doped graphene; undoped graphene; C60; and copper phthalocyanine.

[0048] In some embodiments, the p-type semiconductor material having a fluorene group has the structural formula shown in formula (I):

[0049]

[0050] Where n1 and n2 are each independent integers from 0 to 4;

[0051] X is selected from CR 1 R 2 Or C=R 3 ;

[0052] R'、R”、R 1 R 2 Each group is independently selected from, but is not limited to, H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted thiophene, substituted or unsubstituted C1-C. 30 Alkyl, substituted or unsubstituted C1-C 30 Alkoxy, C1-C 30 Alkylthio, substituted or unsubstituted C1-C 30 Thioalkoxy, substituted or unsubstituted silyl, substituted or unsubstituted C1-C 30 Alkyl carbonyl, substituted or unsubstituted C2-C 30 alkoxycarbonyl, substituted or unsubstituted C7-C 30 aryloxycarbonyl, substituted or unsubstituted C1-C30 Amine, substituted or unsubstituted C2-C 30 Alkenyl, substituted or unsubstituted C2-C 30 Alkyne, heterocyclic alkyl with 3 to 30 substituted or unsubstituted ring atoms, aromatic group with 6 to 60 substituted or unsubstituted ring atoms, heteroaromatic group with 5 to 60 substituted or unsubstituted ring atoms, aryloxy group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryloxy group with 5 to 60 substituted or unsubstituted ring atoms, or combinations of these groups;

[0053] R 3 It can be selected from, but is not limited to, substituted or unsubstituted C1 to C2. 30 Alkylene, substituted or unsubstituted C1-C 30 Imino group, substituted or unsubstituted C2-C 30 alkenyl, substituted or unsubstituted C2-C 30 The group is alkynyl, a heterocyclic alkyl group having 3 to 30 substituted or unsubstituted ring atoms, a heterocyclic alkenyl group having 3 to 30 substituted or unsubstituted ring atoms, or a combination of these groups.

[0054] R' and R” may or may not form a cycle; adjacent R' may or may not form a cycle; adjacent R may or may not form a cycle; R 1 and R 2 They may form rings or not.

[0055] R'、R”、R 1 R 2 R 3 In this context, each substituent is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C1. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or combinations of these groups.

[0056] In some embodiments, R', R”, R 1 R 2 Each group is independently selected from, but is not limited to, H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted thiophene, substituted or unsubstituted C1-C. 25 Alkyl, substituted or unsubstituted C1-C 25 Alkoxy, C1-C 25 Alkylthio, substituted or unsubstituted C1-C 25Thioalkoxy, substituted or unsubstituted silyl, substituted or unsubstituted C1-C 25 Alkyl carbonyl, substituted or unsubstituted C2-C 25 alkoxycarbonyl, substituted or unsubstituted C7-C 25 aryloxycarbonyl, substituted or unsubstituted C1-C 25 Amine, substituted or unsubstituted C2-C 25 Alkenyl, substituted or unsubstituted C2-C 25 Alkyne, a heterocyclic alkyl group having 3 to 25 substituted or unsubstituted ring atoms, an aromatic group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 30 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 30 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 30 substituted or unsubstituted ring atoms, or a combination of these groups.

[0057] Furthermore, in some embodiments, R', R”, R 1 R 2 Each group is independently selected from, but not limited to, H, D, amino, halogen, hydroxyl, substituted or unsubstituted thiophene group, substituted or unsubstituted C1-C2 groups. 20 Alkyl, substituted or unsubstituted C1-C 20 Amine, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne, a heterocyclic alkyl group having 3 to 20 substituted or unsubstituted ring atoms, an aromatic group having 6 to 20 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 20 substituted or unsubstituted ring atoms, an aryloxy group having 6 to 20 substituted or unsubstituted ring atoms, a heteroaryloxy group having 5 to 20 substituted or unsubstituted ring atoms, or a combination of these groups.

[0058] Furthermore, in some embodiments, R', R”, R 1 R 2 Each group is independently selected from, but not limited to, H, D, amino, halogen, hydroxyl, substituted or unsubstituted thiophene group, substituted or unsubstituted C1-C2 groups. 15 Alkyl, substituted or unsubstituted C1-C 15 Amine, substituted or unsubstituted C2-C 15 Alkenyl, substituted or unsubstituted C2-C 15 Alkyne, a heterocyclic alkyl group having 3 to 15 substituted or unsubstituted ring atoms, an aromatic group having 6 to 15 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 15 substituted or unsubstituted ring atoms, or a combination of these groups.

[0059] Furthermore, in some embodiments, R', R”, R 1R 2 Each group is independently selected from, but not limited to, H, D, amino, halogen, hydroxyl, substituted or unsubstituted thiophene group, substituted or unsubstituted C1-C2 groups. 10 Alkyl, substituted or unsubstituted C1-C 12 Amine, substituted or unsubstituted C2-C 10 Alkenyl, substituted or unsubstituted C2-C 10 Alkyne, a heterocyclic alkyl group having 3 to 10 substituted or unsubstituted ring atoms, an aromatic group having 6 to 12 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 12 substituted or unsubstituted ring atoms, or a combination of these groups.

[0060] In some embodiments, R 3 Selected from, but not limited to, substituted or unsubstituted C1 to C2. 25 Alkylene, substituted or unsubstituted C1-C 25 Imino group, substituted or unsubstituted C2-C 25 alkenyl, substituted or unsubstituted C2-C 25 The group may be alkynyl, substituted or unsubstituted heterocyclic alkyl, substituted or unsubstituted heterocyclic alkenyl, substituted or unsubstituted heterocyclic alkynyl, or a combination of these groups.

[0061] Furthermore, in some embodiments, R 3 Selected from, but not limited to, substituted or unsubstituted C1 to C2. 20 Alkylene, substituted or unsubstituted C1-C 20 Imino group, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 The group may be alkynyl, a heterocyclic alkyl group having 3 to 20 substituted or unsubstituted ring atoms, a heterocyclic alkenyl group having 3 to 20 substituted or unsubstituted ring atoms, or a combination of these groups.

[0062] Furthermore, in some embodiments, R 3 Selected from, but not limited to, substituted or unsubstituted C1 to C2. 15 Alkylene, substituted or unsubstituted C1-C 15 Imino group, substituted or unsubstituted C2-C 15 alkenyl, substituted or unsubstituted C2-C 15 The group may be alkynyl, substituted or unsubstituted heterocyclic alkyl, substituted or unsubstituted heterocyclic alkenyl, substituted or unsubstituted heterocyclic alkynyl, or a combination of these groups.

[0063] Furthermore, in some embodiments, R 3 Selected from, but not limited to, substituted or unsubstituted C1 to C2. 10 Alkylene, substituted or unsubstituted C1-C 10 Imino group, substituted or unsubstituted C2-C 10 alkenyl, substituted or unsubstituted C2-C 10 The group may be alkynyl, a substituted or unsubstituted heterocyclic alkyl group having 3 to 10 ring atoms, a substituted or unsubstituted heterocyclic alkenyl group having 3 to 10 ring atoms, a substituted or unsubstituted heterocyclic alkynyl group having 3 to 10 ring atoms, or a combination of these groups.

[0064] In at least some embodiments, R', R”, R 1 R 2 Each is independently selected from hydrogen, hydroxyl, substituted or unsubstituted C1 to C2. 20 Alkyl groups, groups represented by formulas (1-1) to (1-3), or combinations thereof.

[0065] In at least some embodiments, R 3 Selected from substituted or unsubstituted C1 to C2 20 Alkylene, groups represented by formulas (1-4) to (1-5), or combinations thereof.

[0066] The groups represented by formulas (1-1) to (1-5) are respectively:

[0067]

[0068]

[0069] Where n3 and n4 are each independent integers from 0 to 4; n5, n6, n7, and n8 are each independent integers from 0 to 2.

[0070] R0, R0', R 01 R 02 R 03 R 04 R 05 R 06 Substituents are each independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C2. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or combinations of these groups;

[0071] * indicates a connection point.

[0072] In some embodiments, R0, R0', R 01 R 02 R 03 R 04 R 05 R 06 Each group is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C2. 15 Alkyl, C1-C 15 Alkoxy, C1-C 15 Alkyl thioyl, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthioyl with 6 to 30 ring atoms, or combinations of these groups.

[0073] Furthermore, in some embodiments, R0, R0', R 01 R 02 R 03 R 04 R 05 R 06 Each group is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C2. 10 Alkyl, C1-C 10 Alkoxy, C1-C 10 Alkyl thioyl, aryl with 6 to 20 ring atoms, aryloxy with 6 to 20 ring atoms, arylthioyl with 6 to 20 ring atoms, or combinations of these groups.

[0074] Furthermore, in some embodiments, R0, R0', R 01 R 02 R 03 R 04 R 05 R 06 Each group is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C8 alkyl, C1-C8 alkoxy, C1-C8 alkylthio, aryl with 6 to 15 ring atoms, aryloxy with 6 to 15 ring atoms, arylthio with 6 to 15 ring atoms, or a combination of these groups.

[0075] Furthermore, in some embodiments, R0, R0', R 01 R 02 R 03 R 04 R 05 R 06Each group is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl with 6 to 12 ring atoms, aryloxy with 6 to 12 ring atoms, arylthio with 6 to 12 ring atoms, or a combination of these groups.

[0076] As an example, in some embodiments, the p-type semiconductor material having a fluorene group may include, but is not limited to, one or more of poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)](TFB, CAS: 220797-16-0), 2,5-bis(9-hydroxyfluorene)-thiophene (BHFT), 2,5-bis(9-hydroxyfluorene)-[2,2']bidithiophene (BHFBT), 2,5-bis(9-enylfluorene)-3,4-cyclothiopentene (BFTQ), 2,5-bis(9-fluorene)-thiophene (BFT), 9-9'-difluorene (9-9'BF), and 9-6-difluorene (9-6BF).

[0077] The chemical structural formula of the TFB is:

[0078]

[0079] The chemical structural formula of the BHFT is as follows:

[0080]

[0081] The chemical structural formula of the BHFBT is as follows:

[0082]

[0083] The chemical structural formula of the BFTQ is:

[0084]

[0085] The chemical structural formula of the BFT is:

[0086]

[0087] The chemical structural formula of 9-9'BF is:

[0088]

[0089] The chemical structural formula of 9-6BF is:

[0090]

[0091] In some embodiments, the side of the anode 10 away from the light-emitting layer 40 further includes a substrate. The substrate may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may be one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0092] In step S12:

[0093] The unsaturated bonds in the compound can be double or triple bonds, such as carbon-carbon double bonds, carbon-oxygen double bonds, carbon-sulfur double bonds, carbon-carbon triple bonds, carbon-nitrogen triple bonds, etc.

[0094] In some embodiments, the compound having unsaturated bonds includes one or more compounds having the formulas (II-1) and (II-2):

[0095]

[0096] Z1 and Z2 are each independently selected from C or N, and at least one of Z1 and Z2 is C;

[0097] Z3 and Z4 are each independently selected from C, S, O or N, and at least one of Z3 and Z4 is C;

[0098] One of R1 and R2 is selected from -R5-COOH or -R6-NH2, and the other of R1 and R2 is selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C. 11 ~C 30 Alkyl, substituted or unsubstituted C1-C 30 Alkoxy, aryl group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryl group with 5 to 60 substituted or unsubstituted ring atoms, aryloxy group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryloxy group with 6 to 60 substituted or unsubstituted ring atoms, or combinations of these groups;

[0099] One of R3 and R4 is selected from -R7-COOH or -R8-NH2, and the other of R3 and R4, R3' and R4' are each independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1 to C2 groups. 30 Alkyl, substituted or unsubstituted C1-C 30 Alkoxy, aryl group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryl group with 5 to 60 substituted or unsubstituted ring atoms, aryloxy group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryloxy group with 6 to 60 substituted or unsubstituted ring atoms, or combinations of these groups;

[0100] R5, R6, R7, and R8 are each independently selected from single-bonded, substituted, or unsubstituted C1 to C8 bonds. 30 The alkylene group, substituted or unsubstituted aryl group with 6 to 60 ring atoms, substituted or unsubstituted heteroaryl group with 5 to 60 ring atoms, secondary amino group, -O-, -S-, carbonyl group, or one or more combinations thereof; further, R5, R6, R7, and R8 are each independently selected from single bonds, or substituted or unsubstituted C1 to C1 bonds. 30 Alkylene; furthermore, R8 and R9 are each independently selected from single bonds or C1 to C10 alkylene groups.

[0101] It is understood that in some embodiments, when one of R1 and R2 is selected from -R5-COOH, the total number of carbon atoms of R1, R2, Z1 and Z2 can be 5 to 30, for example, 5 to 20, 8 to 20, 10 to 20, 8 to 18, 8 to 30, etc.; in other embodiments, when one of R1 and R2 is selected from -R6-NH2, the total number of carbon atoms of R1, R2, Z1 and Z2 can be 2 to 18, for example, 2 to 5, 2 to 10, 2 to 15, 5 to 18, 10 to 18, etc.

[0102] It is understood that in some embodiments, when one of R3 and R4 is selected from -R7-COOH, the total number of carbon atoms in R3, R4, R3', R4', Z3, and Z4 can be 5 to 30, for example, 5 to 20, 8 to 20, 10 to 20, 8 to 18, 8 to 30, etc. In other embodiments, when one of R3 and R4 is selected from -R8-NH2, the total number of carbon atoms in R3, R4, R3', R4', Z3, and Z4 can be 2 to 18, for example, 2 to 5, 2 to 10, 2 to 15, 5 to 18, 10 to 18, etc.

[0103] In some embodiments, one of R1 and R2 is selected from -R5-COOH or -R6-NH2, and the other of R1 and R2 is selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C2. 20 Alkyl, substituted or unsubstituted C1-C 20 Alkoxy, aryl with 6 to 30 substituted or unsubstituted ring atoms, heteroaryl with 5 to 30 substituted or unsubstituted ring atoms, aryloxy with 6 to 30 substituted or unsubstituted ring atoms, heteroaryloxy with 6 to 30 substituted or unsubstituted ring atoms, or combinations of these groups.

[0104] Furthermore, in some embodiments, one of R1 and R2 is selected from -R5-COOH or -R6-NH2, and the other of R1 and R2 is selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C2 groups. 10 Alkyl, substituted or unsubstituted C1-C 10 Alkoxy, aryl group with 6 to 20 substituted or unsubstituted ring atoms, heteroaryl group with 5 to 20 substituted or unsubstituted ring atoms, aryloxy group with 6 to 20 substituted or unsubstituted ring atoms, heteroaryloxy group with 6 to 20 substituted or unsubstituted ring atoms, or combinations of these groups.

[0105] Furthermore, in some embodiments, one of R1 and R2 is selected from -R5-COOH or -R6-NH2, and the other of R1 and R2 is selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkoxy, substituted or unsubstituted aryl with 6-12 ring atoms, substituted or unsubstituted heteroaryl with 5-12 ring atoms, substituted or unsubstituted aryloxy with 6-12 ring atoms, substituted or unsubstituted heteroaryloxy with 6-12 ring atoms, or a combination of these groups.

[0106] In some embodiments, one of R3 and R4 is selected from -R7-COOH or -R8-NH2, and the other of R3 and R4, R3', and R4' are each independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C. 20 Alkyl, substituted or unsubstituted C1-C 20 Alkoxy, aryl with 6 to 30 substituted or unsubstituted ring atoms, heteroaryl with 5 to 30 substituted or unsubstituted ring atoms, aryloxy with 6 to 30 substituted or unsubstituted ring atoms, heteroaryloxy with 6 to 30 substituted or unsubstituted ring atoms, or combinations of these groups.

[0107] Furthermore, in some embodiments, one of R3 and R4 is selected from -R7-COOH or -R8-NH2, and the other of R3 and R4, R3', and R4' are each independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C. 10 Alkyl, substituted or unsubstituted C1-C 10 Alkoxy, aryl group with 6 to 20 substituted or unsubstituted ring atoms, heteroaryl group with 5 to 20 substituted or unsubstituted ring atoms, aryloxy group with 6 to 20 substituted or unsubstituted ring atoms, heteroaryloxy group with 6 to 20 substituted or unsubstituted ring atoms, or combinations of these groups.

[0108] Furthermore, in some embodiments, one of R3 and R4 is selected from -R7-COOH or -R8-NH2, and the other of R3 and R4, R3', and R4' are each independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkoxy, substituted or unsubstituted aryl with 6-12 ring atoms, substituted or unsubstituted heteroaryl with 5-12 ring atoms, substituted or unsubstituted aryloxy with 6-12 ring atoms, substituted or unsubstituted heteroaryloxy with 6-12 ring atoms, or combinations of these groups.

[0109] In some embodiments, R5, R6, R7, and R8 are each independently selected from single bonds, substituted or unsubstituted C1 to C2 bonds. 20 One or more combinations of alkylene, substituted or unsubstituted aryl group having 6 to 30 ring atoms, substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, secondary amino group, -O-, -S-, and carbonyl group.

[0110] Furthermore, in some embodiments, R5, R6, R7, and R8 are each independently selected from single bonds, substituted or unsubstituted C1 to C2 bonds. 10 One or more combinations of alkylene, substituted or unsubstituted aryl group having 6 to 20 ring atoms, substituted or unsubstituted heteroaryl group having 5 to 20 ring atoms, secondary amino group, -O-, -S-, and carbonyl group.

[0111] Furthermore, in some embodiments, R5, R6, R7, and R8 are each independently selected from one or more combinations of single bonds, substituted or unsubstituted C1-C5 alkylene groups, substituted or unsubstituted aryl groups with 6-12 ring atoms, substituted or unsubstituted heteroaryl groups with 5-12 ring atoms, secondary amino groups, -O-, -S-, and carbonyl groups.

[0112] As an example, in some embodiments, the compound having unsaturated bonds includes, but is not limited to, C5-C6 bonds. 30 Unsaturated fatty acids and C2-C 18 One or more of the enamines, and further, may include, but is not limited to, C8-C8 enamines. 20 Unsaturated fatty acids and C2-C 18 One or more of enamines.

[0113] In some embodiments, C5 to C 30 Unsaturated fatty acids include, but are not limited to, one or more of the following: octenic acid, decenoic acid, dodecenoic acid, tetradecenoic acid, hexadecenoic acid, oleic acid, and 2-octynoic acid.

[0114] In some embodiments, C2 to C 18 Enamines include, but are not limited to, one or more of acrylamine, 4-penten-1-amine, 1-amino-10-undecene, and oleylamine.

[0115] In some embodiments, after the compound with unsaturated bonds is disposed on the pre-fabricated hole functional layer and before the auxiliary layer is formed, a low-temperature treatment is further included. This allows the liquid film to be converted into a solid film, which is beneficial for improving the stability of the auxiliary layer thickness during plasma treatment, for forming a continuous and stable interface layer 30, and for improving the thickness uniformity of the prepared hole functional layer 20 and interface layer 30.

[0116] In some embodiments, the temperature of the low-temperature treatment is 0–10°C, for example, 0°C, 1°C, 2°C, 3°C, 4°C, 5°C, 6°C, 7°C, 8°C, 9°C, 10°C, and any range between any two of these values; the duration of the low-temperature treatment is 2–4 hours, for example, 2 hours, 2.5 hours, 3 hours, 3.5 hours, 4 hours, and any range between any two of these values. Within this temperature and time range, it is beneficial to convert the liquid membrane into a solid membrane.

[0117] In some embodiments, the thickness of the auxiliary layer is 2–7 nm, for example, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, and any range between these two values. Within this thickness range, it is beneficial for the forward bias and the plasma treatment to achieve better effects, and it is also beneficial for the P-type semiconductor material with fluorene groups to react with compounds with unsaturated bonds to form a cross-linked structure.

[0118] In step S13:

[0119] In some embodiments, applying a positive bias voltage to the optoelectronic device preform includes connecting the anode 10 to the positive terminal of a power supply.

[0120] In some embodiments, the forward bias voltage is 10–100V, for example, 10V, 20V, 30V, 40V, 50V, 60V, 70V, 80V, 90V, 100V, and any range between two of these values. Within this range, it is advantageous for p-type semiconductor materials with fluorene groups to react with compounds having unsaturated bonds to form cross-linked structures.

[0121] In some embodiments, the negatively charged plasma includes, but is not limited to, hydrogen anions (H+). - One or more of the following: plasma, nitrogen negative ion plasma, hydrocarbon plasma, fluorocarbon plasma, helium negative ion plasma, neon negative ion plasma, argon negative ion plasma, and xenon negative ion plasma.

[0122] It should be noted that the negative ions mentioned in this application refer to ions carrying a negative charge. For example, a helium negative ion refers to a helium ion carrying a negative charge.

[0123] In some embodiments, the radio frequency power of the plasma treatment is 80–120 W, for example, 80 W, 85 W, 90 W, 95 W, 100 W, 105 W, 110 W, 115 W, 120 W, and any range between any two of these values; the gas pressure of the plasma treatment is 15–30 Pa, for example, 15 Pa, 16 Pa, 18 Pa, 20 Pa, 22 Pa, 23 Pa, 25 Pa, 26 Pa, 28 Pa, 30 Pa, and any range between any two of these values; the plasma treatment time is 20–50 s, for example, 20 s, 25 s, 30 s, 35 s, 40 s, 45 s, 50 s, and any range between any two of these values. Within the ranges of radio frequency power, gas pressure, and time, it is beneficial for p-type semiconductor materials with fluorene groups to react with compounds with unsaturated bonds to form cross-linked structures.

[0124] In some embodiments, the plasma treatment is performed in a plasma chamber. Furthermore, before plasma treatment of the auxiliary layer, the plasma chamber is further cleaned with plasma. This avoids the introduction of other impurity gases when the plasma is excited during the plasma treatment process.

[0125] In some embodiments, applying a forward bias voltage to the optoelectronic device preform and performing plasma treatment on the auxiliary layer are performed at a first temperature. The first temperature is 0–10°C, for example, 0°C, 1°C, 2°C, 3°C, 4°C, 5°C, 6°C, 7°C, 8°C, 9°C, 10°C, and any range between any two of these values. The relatively low temperature, within this temperature range, allows the auxiliary layer to remain solid, which is beneficial for maintaining the stability of the auxiliary layer's thickness during plasma treatment, for forming a continuous and stable interface layer 30, and for improving the thickness uniformity of the prepared hole functional layer 20 and interface layer 30.

[0126] In some embodiments, after obtaining the stacked hole-functional layer 20 and interface layer 30, the method further includes removing unreacted compounds with unsaturated bonds. Specifically, the unreacted compounds with unsaturated bonds are cleaned with a cleaning agent at a second temperature.

[0127] In some embodiments, the second temperature is 20 to 30°C, for example, 20°C, 22°C, 25°C, 26°C, 28°C, 30°C, and any range between any two of the stated values.

[0128] In some embodiments, the cleaning agent includes, but is not limited to, alcohol solvents, including, but not limited to, one or more of ethanol, methanol, propanol, butanol, ethylene glycol, and isopropanol.

[0129] In some embodiments, the thickness of the hole functional layer 20 is 20 to 30 nm, for example, 20 nm, 22 nm, 23 nm, 25 nm, 26 nm, 28 nm, 30 nm, and any range between any two of the above values.

[0130] In some embodiments, the thickness of the interface layer 30 is 4–10 nm, for example, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, and any range between these two values. Within this thickness range, problems such as the reduction of conductive π bonds and the increase of defects on the quantum dot surface caused by the reaction between the p-type semiconductor material with fluorene groups on the hole functional layer surface and the ligands with unsaturated bonds on the quantum dot surface of the light-emitting layer during the operation of the optoelectronic device can be effectively avoided, thereby effectively improving the brightness, efficiency, and lifespan of the optoelectronic device 100.

[0131] In some embodiments, the crosslinked structure may have the structure shown in formula (III-1) or formula (1-2):

[0132]

[0133] Where m1 and m2 are selected from any integers from 1 to 50, for example, they can be 1 to 10, 1 to 20, 1 to 30, 1 to 40, 1 to 50, 2 to 15, 5 to 20, 10 to 30, 20 to 40, 30 to 50, etc.

[0134] X, R', R”, R1, R2, R3, R4, R3', R4', Z1, Z2, Z3, Z4, n1, n2 are described above respectively;

[0135] L is selected from C1 to C2, whether it is a single bond, substituted, or unsubstituted. 30 One or more combinations of alkylene, substituted or unsubstituted aryl group having 6 to 60 ring atoms, substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms, secondary amino group, -O-, -S-, and carbonyl group.

[0136] In L, when any group is substituted by a substituent, each substituent is independently selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, C1-C1. 10 Alkyl, C1-C 10 One or more combinations of alkoxy groups and aryl groups having 6 to 20 ring atoms.

[0137] In step S14:

[0138] In some embodiments, forming a light-emitting layer 40 and a cathode 50 sequentially on the interface layer 30 includes forming a light-emitting layer 40, an electronic functional layer 60, and a cathode 50 sequentially on the interface layer 30.

[0139] The electronic functional layer 60 includes one or both of an electron transport layer and an electron injection layer. It is understood that when the electronic functional layer 60 includes both an electron transport layer and an electron injection layer, the electron injection layer is located between the electron transport layer and the cathode 50.

[0140] The anode 10 and the cathode 50 are anodes and cathodes known in the art for use in optoelectronic devices. For example, they can be independently, but are not limited to, doped metal oxide particle electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The material of the doped metal oxide particle electrode can be, but is not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), and aluminum-doped magnesium oxide (AMO). The composite electrode is a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxide particles, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, etc., where " / " indicates a stacked structure. For example, AZO / Ag / AZO represents a composite electrode comprising sequentially stacked AZO, Ag, and AZO layers. The material of the elemental metal electrode may include, but is not limited to, one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba.

[0141] The material of the light-emitting layer 40 can be any material known in the art for use as a light-emitting layer, such as, but not limited to, one or more of organic light-emitting materials and quantum dots.

[0142] The organic light-emitting materials may include, but are not limited to, one or more of the following: CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)), TCTX:Ir(mmpy)(4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing BN covalent bonds, HLCT (hybrid local charge transfer excited state) materials, Exciplex (excitoplex) light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0143] In some embodiments, the quantum dot may include, but is not limited to, one or more of single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots. The core-shell quantum dot comprises one or more shell layers.

[0144] The materials for the single-structure quantum dots, the core materials for the core-shell structure quantum dots, and the shell materials for the core-shell structure quantum dots may include, but are not limited to, one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group III-V compounds may include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group I-III-VI compounds may include, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0145] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0146] The perovskite quantum dots may include, but are not limited to, doped or undoped inorganic perovskite quantum dots, or organic-inorganic hybrid perovskite quantum dots. The general structural formula of the inorganic perovskite quantum dots is AMX3, where A is Cs. + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following. The general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2 + Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of them.

[0147] In some embodiments, the average particle size of the quantum dots is 5 to 15 nm, for example, 5 nm, 6 nm, 8 nm, 10 nm, 12 nm, 13 nm, 15 nm, and any range between any two of the stated values.

[0148] The surface of the quantum dot is also attached with ligands, including but not limited to the compounds with unsaturated bonds described above. It is understood that the compounds with unsaturated bonds in the auxiliary layer may be the same as or different from the compounds with unsaturated bonds attached to the surface of the quantum dot.

[0149] In some embodiments, the ligand may also include, but is not limited to, substituted or unsubstituted C6-C6 ligands. 24 Saturated fatty acids, substituted or unsubstituted C6-C 24 Fatty amines, substituted or unsubstituted C6-C 24 Aliphatic thiols, substituted or unsubstituted C6-C 24 Aliphatic sulfides, substituted or unsubstituted C6-C 24 Aliphatic phosphine, substituted or unsubstituted C6-C 24 Aliphatic phosphine oxides, substituted or unsubstituted C8-C 20 Aliphatic phosphates, substituted or unsubstituted C6-C 24 Aliphatic phosphates, substituted or unsubstituted C6-C 24 Aliphatic phosphorous acid and substituted or unsubstituted C6-C 24 At least one of the fatty phosphites, wherein the substituent is selected from at least one of C1-C6 alkyl, C1-C6 alkoxy and halogen.

[0150] In some embodiments, the substituted or unsubstituted C6-C 24 Fatty acids include at least one of decanoic acid, myristic acid, and stearic acid.

[0151] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic thiols include at least one of octylthiol, dodecylthiol, and octadecylthiol.

[0152] In some embodiments, the substituted or unsubstituted C6-C 24 Fatty amines include at least one of octadecylamine, octylamine, dioctylamine, and trioctylamine.

[0153] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic phosphines include trioctylphosphine.

[0154] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic phosphine oxides include trioctylphosphine oxides.

[0155] In at least some embodiments, the material of the light-emitting layer 40 is the quantum dot, and the ligand includes the compound having unsaturated bonds.

[0156] The material of the electronic functional layer 60 is a material known in the art for use in electron transport layers, such as one or more selected from, but not limited to, inorganic and organic electron transport materials. The inorganic electron transport material includes, but is not limited to, one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The undoped metal oxide particles include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the doped metal oxide particles include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the doped metal oxide particles include, but are not limited to, one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include, but are not limited to, one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include, but are not limited to, one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include, but are not limited to, one or more of CuInS and CuGaS.The organic electron transport materials include diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide (TSPO1), 1,3,5-tris((3-pyridyl)-3-phenyl)benzene (TmPyPB), 2-(4-biphenyl)-5-phenyloxadiazole (PBD), bis(10-hydroxybenzo[h]quinoline)beryllium (Bebq2) (CAS: 148896-39-3), and 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (T AZ), 2,7-bis(diphenyloxyphosphino)-9,9'-spirobis[fluorene] (SPPO13), 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)phenyl (TPBI), 4,6-bis(3,5-di(3-pyridinylphenyl)-2-methylpyrimidine (B3PYMPM), 4,7-diphenyl-1,10-phenanthroline (BPhen), 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, 2,9-dimethyl-4,7 -Diphenyl-1,10-o-phenanthroline, 4,7-diphenyl-1,10-o-phenanthroline, bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum, 8-hydroxyquinoline aluminum (Alq3), 2,7-bis(diphenyloxyphosphino)-9,9'-spirobis[fluorene], poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 9,9-bis[3'-(N,N-dimethylamino)propyl-2,7-fluorene]-alternating-2, One or more of the following: 7-(9,9-dioctylfluorene), 1,3-bis[5-(4-tert-butylphenyl)-2-[1,3,4]oxadiazolyl]benzene (OXD-7), 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile))(CNT2T), and 2,4,6-tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole (POT2T, CAS No.: 1646906-26-4).

[0157] It is understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emission requirements of the optoelectronic device 100.

[0158] In some embodiments, the thickness of the anode 10 is 10–120 nm; the thickness of the light-emitting layer 40 is 30–50 nm; the thickness of the cathode 50 is 50–120 nm; and the thickness of the electronic functional layer 60 is 20–60 nm.

[0159] The methods for forming the pre-fabricated hole functional layer, the auxiliary layer, the light-emitting layer 40, the cathode 50, and the electronic functional layer 60 described in this application can be implemented using conventional techniques in the art, such as chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition and solution methods. Physical deposition methods include thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods can include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating, etc.

[0160] It is understood that when the optoelectronic device 100 further includes functional layers that are conventionally used in optoelectronic devices to help improve the performance of the optoelectronic device, such as an electron injection layer, an electron blocking layer, a hole blocking layer, an interface modification layer, etc., the method of fabricating the optoelectronic device 100 may also include the step of fabricating the above-mentioned functional layers using conventional techniques in the art.

[0161] Secondly, please refer to Figure 2 This application also provides an optoelectronic device 100, which is prepared by the preparation method described above. The optoelectronic device 100 includes a stacked anode 10, a hole-functional layer 20, an interface layer 30, a light-emitting layer 40, and a cathode 50. The hole-functional layer 20 includes the p-type semiconductor material with fluorene groups, and the interface layer 30 includes a p-type semiconductor material with fluorene groups reacting with a compound having unsaturated bonds to form a cross-linked structure.

[0162] The p-type semiconductor material with fluorene groups, the compound with unsaturated bonds, and the cross-linking structure are described above and will not be repeated here.

[0163] In some embodiments, the optoelectronic device 100 further includes an electronic functional layer 60, which is located between the light-emitting layer 40 and the cathode 50. The electronic functional layer 60 includes one or both of an electron transport layer and an electron injection layer. It is understood that when the electronic functional layer 60 includes both an electron transport layer and an electron injection layer, the electron injection layer is located between the electron transport layer and the cathode 50.

[0164] The anode 10, the light-emitting layer 40, the cathode 50, and the electronic functional layer 60 are as described above and will not be repeated here.

[0165] In at least some embodiments, the material of the light-emitting layer 40 is the quantum dot, and the ligand includes the compound having unsaturated bonds. It is understood that the compound having unsaturated bonds forming the cross-linked structure may be the same as or different from the compound having unsaturated bonds attached to the surface of the quantum dot.

[0166] The optoelectronic device 100 described in this application has an interface layer 30 between the hole functional layer 20 and the light-emitting layer 40. This avoids problems such as the reduction of conductive π bonds and the increase of defects on the quantum dot surface caused by the reaction between the p-type semiconductor material with fluorene groups on the surface of the hole functional layer and the compound ligands with unsaturated bonds on the surface of the quantum dot on the surface of the light-emitting layer during the operation of the optoelectronic device. This effectively improves the brightness, efficiency and lifespan of the optoelectronic device 100.

[0167] It is understood that the optoelectronic device 100 can be an upright optoelectronic device. The optoelectronic device 100 can be a quantum dot optoelectronic device or an organic optoelectronic device. In at least one embodiment, the optoelectronic device 100 is a quantum dot optoelectronic device.

[0168] It is understood that the optoelectronic device 100 may also be provided with some functional layers that are conventionally used in optoelectronic devices and help to improve the performance of optoelectronic devices, such as electron blocking layer, hole blocking layer, interface modification layer, etc.

[0169] Thirdly, embodiments of this application also provide a display device, which includes the optoelectronic device 100.

[0170] The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0171] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0172] Example 1

[0173] Step 1: Provide an ITO anode glass substrate, wherein the thickness of the ITO anode is 80nm. The ITO anode glass substrate is ultrasonically cleaned with acetone and ethanol for 15min, then cleaned with deionized water and dried. Next, it is dried on a heating plate at 150℃ for 10min, and then irradiated with ultraviolet light for 20min to increase the work function of ITO.

[0174] Step 2: Spin-coat PEDOT:PSS material (2.8% by mass) onto the ITO anode at a speed of 3000 rpm for 30 seconds, and then heat it on a 150°C heating plate for 20 minutes to obtain a hole injection layer with a thickness of 20 nm.

[0175] Step 3: Spin-coat the hole injection layer with TFB dispersion (concentration 8 mg / mL) at a speed of 3000 rpm for 30 seconds, and heat on a 150°C heating plate for 20 minutes to obtain a prefabricated hole transport layer with a thickness of 25 nm.

[0176] Step 4: Spin coat the pre-fabricated hole transport layer with oleic acid at a concentration of 4000 rpm for 30 seconds to obtain a liquid film. Then, treat the liquid film at 5°C for 3 hours to solidify it into a solid film, thus obtaining an auxiliary layer with a thickness of 5 nm.

[0177] Step 5: Provide plasma treatment equipment, clean the chamber with hydrogen negative ion plasma for 10 minutes to ensure that no other residual gas appears when the plasma is excited, place the substrate in the chamber, maintain the temperature of the chamber at 5°C, apply a positive bias voltage of 20V to the substrate, and simultaneously perform plasma treatment with hydrogen negative ion plasma. The radio frequency power of the plasma treatment is 100W, the gas pressure in the chamber is 20Pa, and the treatment time is 30s. This allows TFB at the interface between the pre-fabricated hole functional layer and the auxiliary layer to react with oleic acid to form a cross-linked structure, resulting in a stacked hole transport layer with a thickness of 23nm and an interface layer with a thickness of 6nm. The hole transport layer includes TFB, and the interface layer includes a cross-linked structure formed by the reaction of TFB and oleic acid.

[0178] Step S6: Return to room temperature (25°C), spin coat anhydrous ethanol onto the surface of the interface layer at a speed of 1500 rpm for 30 seconds to remove excess oleic acid.

[0179] Step 7: Spin-coat a 30 mg / mL CdZnSe / ZnSe / CdZnS / ZnS blue quantum dot solution (solvent is n-hexane, and oleic acid ligands are attached to the surface of the quantum dots) onto the interface layer. The spin-coating speed is 2000 rpm and the time is 30 seconds. Heat on an 80°C hot plate for 5 minutes to obtain a light-emitting layer with a thickness of 30 nm.

[0180] Step 8: Spin-coat an ethanol solution of ZnO with a concentration of 25 mg / mL onto the light-emitting layer at a spin speed of 4000 rpm for 30 seconds, and anneal at 80°C for 5 min to obtain an electron transport layer with a thickness of 35 nm.

[0181] Step 6: In the vacuum coating machine, evacuate the vacuum to 3×10⁻⁶.-4 Pa, Al is deposited on the electron transport layer to obtain a cathode with a thickness of 100 nm;

[0182] Step 7: Package the device to obtain an optoelectronic device, which is a quantum dot light-emitting diode.

[0183] Example 2

[0184] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the thickness of the auxiliary layer is 2nm and the thickness of the interface layer is 4nm.

[0185] Example 3

[0186] This embodiment is basically the same as Embodiment 1, except that the thickness of the auxiliary layer is 7nm and the thickness of the interface layer is 8nm.

[0187] Example 4

[0188] This embodiment is basically the same as embodiment 1, except that in this embodiment, the forward bias voltage in step 5 is 10V and the thickness of the interface layer is 4nm.

[0189] Example 5

[0190] This embodiment is basically the same as embodiment 1, except that in this embodiment, the forward bias voltage in step 5 is 100V and the thickness of the interface layer is 9nm.

[0191] Example 6

[0192] This embodiment is basically the same as embodiment 1, except that in this embodiment, the radio frequency power in step 5 is 80W and the interface layer thickness is 5nm.

[0193] Example 7

[0194] This embodiment is basically the same as embodiment 1, except that in this embodiment, the radio frequency power in step 5 is 120W and the interface layer thickness is 7nm.

[0195] Example 8

[0196] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the plasma treatment time in step 5 is 20s and the interface layer thickness is 5nm.

[0197] Example 9

[0198] This embodiment is basically the same as embodiment 1, except that in this embodiment, the plasma treatment time in step 5 is 30s and the interface layer thickness is 7nm.

[0199] Example 10

[0200] This embodiment is basically the same as Embodiment 1, except that in this embodiment, nitrogen negative ion plasma is used instead of hydrogen negative ion plasma in Embodiment 1 in step 5, and the interface layer thickness is 6nm.

[0201] Example 11

[0202] This embodiment is basically the same as Embodiment 1, except that octenic acid is used instead of oleic acid in Embodiment 1 in this embodiment.

[0203] Example 12

[0204] This embodiment is basically the same as Embodiment 1, except that in this embodiment, acrylamine is used to replace oleic acid in Embodiment 1.

[0205] Example 13

[0206] This embodiment is basically the same as Embodiment 1, except that in this embodiment, oleylamine is used to replace oleic acid in Embodiment 1.

[0207] Example 14

[0208] This embodiment is basically the same as embodiment 1, except that in this embodiment, BHFT is used to replace TFB in embodiment 1.

[0209] Example 15

[0210] This embodiment is basically the same as Embodiment 1, except that BFTQ is used instead of TFB in Embodiment 1 in this embodiment.

[0211] Example 16

[0212] This embodiment is basically the same as Embodiment 1, except that in this embodiment, 9-9'BF is used to replace TFB in Embodiment 1.

[0213] Comparative Example 1

[0214] This comparative example is basically the same as Example 1, except that steps 4 to 6 are not included in this comparative example. The prefabricated hole transport layer in step 3 is the hole transport layer of the optoelectronic device in this comparative example.

[0215] Comparative Example 2

[0216] This comparative example is basically the same as Comparative Example 1, except that BHFT is used to replace TFB in Comparative Example 1 in this comparative example.

[0217] Comparative Example 3

[0218] This comparative example is basically the same as Comparative Example 1, except that BFTQ is used instead of TFB in Comparative Example 1 in this comparative example.

[0219] Comparative Example 4

[0220] This comparative example is basically the same as Comparative Example 1, except that in this comparative example, 9-9'BF is used instead of TFB in Comparative Example 1.

[0221] The maximum brightness L of the optoelectronic devices in Examples 1-16 and Comparative Examples 1-4 max External quantum efficiency (EQE), lifetime (T95), and lifetime (T95@1000nit) were tested respectively, and the test results are shown in Table 1.

[0222] Maximum brightness L max The results were obtained using a PR650 luminance meter.

[0223] External quantum efficiency (EQE) is the ratio of electron-hole pairs injected into a quantum dot to emitted photons, expressed as a percentage (%). It is an important parameter for evaluating the quality of electroluminescent devices and can be measured using an EQE optical testing instrument. The specific calculation formula is as follows:

[0224]

[0225] Where ηe is the optical output coupling efficiency, ηr is the ratio of recombination carriers to injected carriers, χ is the ratio of the number of excitons generating photons to the total number of excitons, and K R K is the radiation process rate. NR This represents the rate of a non-radiative process.

[0226] The lifetime T95 and lifetime T95@1000nit test methods are as follows: In CDA gas, under a constant current drive of 2mA, the time it takes for the device brightness to decay to a certain percentage of its maximum brightness is measured. The time for the brightness to decay to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the lifetime testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at low brightness is obtained by fitting the decay fitting formula. For example, the lifetime at 1000nit is denoted as T95@1000nit, and the calculation formula is:

[0227]

[0228] Among them, T95 L For lifespan at low brightness, it is generally taken as the lifespan at 1000 nits, T95. H The lifetime at high brightness, i.e., the measured lifetime, L H L is the maximum brightness that the device accelerates to. L The typical value is 1000 nits, and A is the acceleration factor, which is set to 1.7.

[0229] The above test conditions were: conducted at room temperature with an air humidity of 50%.

[0230] Table 1:

[0231]

[0232]

[0233] As shown in Table 1:

[0234] Compared to the optoelectronic device of Comparative Example 1, the optoelectronic devices of Examples 1-13 have higher maximum brightness, higher luminous efficiency, and longer lifespan; compared to the optoelectronic device of Comparative Example 2, the optoelectronic device of Example 14 has higher maximum brightness, higher luminous efficiency, and longer lifespan; compared to the optoelectronic device of Comparative Example 3, the optoelectronic device of Example 15 has higher maximum brightness, higher luminous efficiency, and longer lifespan; compared to the optoelectronic device of Comparative Example 4, the optoelectronic device of Example 16 has higher maximum brightness, higher luminous efficiency, and longer lifespan. It is evident that the method described in this application for fabricating optoelectronic devices can effectively improve the brightness, efficiency, and lifespan of the devices. This is likely because the method involves forming an auxiliary layer on the pre-fabricated hole functional layer, and then simulating an energized state by applying a forward bias and plasma treatment. This causes the P-type semiconductor material with fluorene groups at the interface between the pre-fabricated hole functional layer and the auxiliary layer to react with compounds with unsaturated bonds to form a cross-linked structure. This activates the P-type semiconductor material with fluorene groups on at least the side of the pre-fabricated hole functional layer furthest from the anode, forming a stable structure. This avoids problems such as reduced conductive π bonds and increased defects on the quantum dot surface caused by the reaction between the P-type semiconductor material with fluorene groups on the hole functional layer surface and the ligands with unsaturated bonds on the quantum dot surface of the light-emitting layer during the operation of the optoelectronic device.

[0235] It should be noted that the lifespan of an optoelectronic device is an important indicator of its stability. As can be seen from the fact that the lifespan of the optoelectronic device in the embodiment of this application is longer than that of the optoelectronic device in the comparative example, the optoelectronic device prepared by the preparation method of this application can effectively improve the lifespan of the optoelectronic device.

[0236] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A method for fabricating an optoelectronic device, characterized in that, Includes the following steps: An anode is provided, on which a pre-formed hole functional layer is formed, the material of the pre-formed hole functional layer comprising a P-type semiconductor material having fluorene groups; A compound with unsaturated bonds is provided, and the compound with unsaturated bonds is disposed on the pre-fabricated hole functional layer to form an auxiliary layer, thereby obtaining a photoelectric device preform; A positive bias voltage is applied to the optoelectronic device preform, and the auxiliary layer is subjected to plasma treatment using negatively charged plasma. This causes the P-type semiconductor material with fluorene groups at the interface between the preformed hole functional layer and the auxiliary layer to react with a compound with unsaturated bonds to form a cross-linked structure, resulting in a stacked hole functional layer and an interface layer. The hole functional layer includes the P-type semiconductor material with fluorene groups, and the interface layer includes a cross-linked structure formed by the reaction of the P-type semiconductor material with fluorene groups and a compound with unsaturated bonds. A light-emitting layer and a cathode are sequentially formed on the interface layer to obtain an optoelectronic device.

2. The preparation method according to claim 1, characterized in that, The magnitude of the forward bias voltage is 10–100V; and / or The radio frequency power of the plasma treatment is 80–120W; and / or The plasma treatment pressure is 15–30 Pa; and / or The plasma treatment time is 20–50 s; and / or The thickness of the auxiliary layer is 2–7 nm; and / or The thickness of the interface layer is 4–10 nm; and / or The thickness of the hole functional layer is 20–30 nm; and / or The unsaturated bonds in the compound are double or triple bonds; and / or The negatively charged plasma includes one or more of the following: hydrogen negative ion plasma, nitrogen negative ion plasma, hydrocarbon plasma, fluorocarbon plasma, helium negative ion plasma, neon negative ion plasma, argon negative ion plasma, and xenon negative ion plasma.

3. The preparation method according to claim 2, characterized in that, Applying a positive bias voltage to the optoelectronic device preform includes: connecting the anode to the positive terminal of a power supply; and / or The sequential formation of a light-emitting layer and a cathode on the interface layer includes: sequentially forming a light-emitting layer, an electronic functional layer, and a cathode on the interface layer; and / or The process further includes, after the compound with unsaturated bonds is disposed on the pre-formed hole functional layer and before the auxiliary layer is formed: a low-temperature treatment, wherein the low-temperature treatment temperature is 0–10°C and the low-temperature treatment time is 2–4 h; and / or The application of a positive bias voltage to the optoelectronic device preform and the plasma treatment of the auxiliary layer are performed at a first temperature, wherein the first temperature is 0–10°C; and / or After obtaining the stacked hole functional layer and interface layer, the process further includes: removing unreacted compounds with unsaturated bonds using a cleaning agent at a second temperature, wherein the second temperature is 20–30°C; the cleaning agent includes an alcohol solvent, optionally including one or more of ethanol, methanol, propanol, butanol, ethylene glycol, and isopropanol.

4. The preparation method according to claim 1, characterized in that, It also includes one or more of the following features (1) to (2): (1) The p-type semiconductor material with fluorene groups has the structural formula shown in formula (I): Where X is selected from CR 1 R 2 Or C=R 3 ; n1 and n2 are each independent integers from 0 to 4; R'、R”、R 1 R 2 Each group is independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted thiophene, or substituted or unsubstituted C1-C2 groups. 30 Alkyl, substituted or unsubstituted C1-C 30 Alkoxy, C1-C 30 Alkylthio, substituted or unsubstituted C1-C 30 Thioalkoxy, substituted or unsubstituted silyl, substituted or unsubstituted C1-C 30 Alkyl carbonyl, substituted or unsubstituted C2-C 30 alkoxycarbonyl, substituted or unsubstituted C7-C 30 aryloxycarbonyl, substituted or unsubstituted C1-C 30 Amine, substituted or unsubstituted C2-C 30 Alkenyl, substituted or unsubstituted C2-C 30 Alkyne, heterocyclic alkyl with 3 to 30 substituted or unsubstituted ring atoms, aromatic group with 6 to 60 substituted or unsubstituted ring atoms, heteroaromatic group with 5 to 60 substituted or unsubstituted ring atoms, aryloxy group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryloxy group with 5 to 60 substituted or unsubstituted ring atoms, or combinations of these groups; R 3 Selected from substituted or unsubstituted C1 to C2 30 Alkylene, substituted or unsubstituted C1-C 30 Imino group, substituted or unsubstituted C2-C 30 alkenyl, substituted or unsubstituted C2-C 30 The group is alkynyl, a heterocyclic alkyl group having 3 to 30 substituted or unsubstituted ring atoms, a heterocyclic alkenyl group having 3 to 30 substituted or unsubstituted ring atoms, or a combination of these groups. R'、R”、R 1 R 2 R 3 In this context, each substituent is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C1. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or combinations of these groups; R' and R” may or may not form a cycle; adjacent R' may or may not form a cycle; adjacent R may or may not form a cycle; R 1 and R 2 They may form rings or not; (2) The compound having unsaturated bonds includes one or more of the compounds shown in formula (II-1) and formula (II-2): Z1 and Z2 are each independently selected from C or N, and at least one of Z1 and Z2 is C; Z3 and Z4 are each independently selected from C, S, O or N, and at least one of Z3 and Z4 is C; One of R1 and R2 is selected from -R5-COOH or -R6-NH2, and the other of R1 and R2 is selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C2. 30 Alkyl, substituted or unsubstituted C1-C 30 Alkoxy, aryl group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryl group with 5 to 60 substituted or unsubstituted ring atoms, aryloxy group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryloxy group with 6 to 60 substituted or unsubstituted ring atoms, or combinations of these groups; One of R3 and R4 is selected from -R7-COOH or -R8-NH2, and the other of R3 and R4, R3' and R4' are each independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1 to C2 groups. 30 Alkyl, substituted or unsubstituted C1-C 30 Alkoxy, aryl group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryl group with 5 to 60 substituted or unsubstituted ring atoms, aryloxy group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryloxy group with 6 to 60 substituted or unsubstituted ring atoms, or combinations of these groups; R5, R6, R7, and R8 are each independently selected from single-bonded, substituted, or unsubstituted C1 to C8 bonds. 30 One or more combinations of alkylene, substituted or unsubstituted aryl group having 6 to 60 ring atoms, substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms, secondary amino group, -O-, -S-, and carbonyl group.

5. The preparation method according to claim 4, characterized in that, It also includes one or more of the following features (1) to (17): (1) R', R”, R 1 R 2 Each group is independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted thiophene, or substituted or unsubstituted C1-C2 groups. 25 Alkyl, substituted or unsubstituted C1-C 25 Alkoxy, C1-C 25 Alkylthio, substituted or unsubstituted C1-C 25 Thioalkoxy, substituted or unsubstituted silyl, substituted or unsubstituted C1-C 25 Alkyl carbonyl, substituted or unsubstituted C2-C 25 alkoxycarbonyl, substituted or unsubstituted C7-C 25 aryloxycarbonyl, substituted or unsubstituted C1-C 25 Amine, substituted or unsubstituted C2-C 25 Alkenyl, substituted or unsubstituted C2-C 25 Alkyne, heterocyclic alkyl with 3 to 25 substituted or unsubstituted ring atoms, aromatic group with 6 to 30 substituted or unsubstituted ring atoms, heteroaromatic group with 5 to 30 substituted or unsubstituted ring atoms, aryloxy group with 6 to 30 substituted or unsubstituted ring atoms, heteroaryloxy group with 5 to 30 substituted or unsubstituted ring atoms, or combinations of these groups; (2) R', R”, R 1 R 2 Each element is independently selected from H, D, amino, halogen, hydroxyl, substituted or unsubstituted thiophene group, substituted or unsubstituted C1-C2 groups. 20 Alkyl, substituted or unsubstituted C1-C 20 Amine, substituted or unsubstituted C2-C 20 Alkenyl, substituted or unsubstituted C2-C 20 Alkyne, heterocyclic alkyl with 3 to 20 substituted or unsubstituted ring atoms, aromatic group with 6 to 20 substituted or unsubstituted ring atoms, heteroaromatic group with 5 to 20 substituted or unsubstituted ring atoms, aryloxy group with 6 to 20 substituted or unsubstituted ring atoms, heteroaryloxy group with 5 to 20 substituted or unsubstituted ring atoms, or combinations of these groups; (3) R', R”, R 1 R 2 Each element is independently selected from H, D, amino, halogen, hydroxyl, substituted or unsubstituted thiophene group, substituted or unsubstituted C1-C2 groups. 15 Alkyl, substituted or unsubstituted C1-C 15 Amine, substituted or unsubstituted C2-C 15 Alkenyl, substituted or unsubstituted C2-C 15 Alkyne, heterocyclic alkyl groups having 3 to 15 substituted or unsubstituted ring atoms, aromatic groups having 6 to 15 substituted or unsubstituted ring atoms, heteroaromatic groups having 5 to 15 substituted or unsubstituted ring atoms, or combinations of these groups; (4) R', R”, R 1 R 2 Each element is independently selected from H, D, amino, halogen, hydroxyl, substituted or unsubstituted thiophene group, substituted or unsubstituted C1-C2 groups. 10 Alkyl, substituted or unsubstituted C1-C 12 Amine, substituted or unsubstituted C2-C 10 Alkenyl, substituted or unsubstituted C2-C 10 Alkyne, heterocyclic alkyl groups having 3 to 10 substituted or unsubstituted ring atoms, aromatic groups having 6 to 12 substituted or unsubstituted ring atoms, heteroaromatic groups having 5 to 12 substituted or unsubstituted ring atoms, or combinations of these groups; (5)R 3 Selected from substituted or unsubstituted C1 to C2 25 Alkylene, substituted or unsubstituted C1-C 25 Imino group, substituted or unsubstituted C2-C 25 alkenyl, substituted or unsubstituted C2-C 25 The group may be alkynyl, substituted or unsubstituted heterocyclic alkyl, substituted or unsubstituted heterocyclic alkenyl, substituted or unsubstituted heterocyclic alkynyl, or a combination of these groups. (6)R 3 Selected from substituted or unsubstituted C1 to C2 20 Alkylene, substituted or unsubstituted C1-C 20 Imino group, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 The group may be alkynyl, substituted or unsubstituted heterocyclic alkyl, substituted or unsubstituted heterocyclic alkenyl, substituted or unsubstituted heterocyclic alkynyl, or a combination of these groups. (7)R 3 Selected from substituted or unsubstituted C1 to C2 15 Alkylene, substituted or unsubstituted C1-C 15 Imino group, substituted or unsubstituted C2-C 15 alkenyl, substituted or unsubstituted C2-C 15 The group may be alkynyl, substituted or unsubstituted heterocyclic alkyl, substituted or unsubstituted heterocyclic alkenyl, substituted or unsubstituted heterocyclic alkynyl, or a combination of these groups. (8)R 3 Selected from substituted or unsubstituted C1 to C2 10 Alkylene, substituted or unsubstituted C1-C 10 Imino group, substituted or unsubstituted C2-C 10 alkenyl, substituted or unsubstituted C2-C 10 The group may be alkynyl, substituted or unsubstituted heterocyclic alkyl, substituted or unsubstituted heterocyclic alkenyl, substituted or unsubstituted heterocyclic alkynyl, or a combination of these groups. (9) One of R1 and R2 is selected from -R5-COOH or -R6-NH2, and the other of R1 and R2 is selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C2. 20 Alkyl, substituted or unsubstituted C1-C 20 Alkoxy, aryl group with 6 to 30 substituted or unsubstituted ring atoms, heteroaryl group with 5 to 30 substituted or unsubstituted ring atoms, aryloxy group with 6 to 30 substituted or unsubstituted ring atoms, heteroaryloxy group with 6 to 30 substituted or unsubstituted ring atoms, or combinations of these groups; (10) One of R1 and R2 is selected from -R5-COOH or -R6-NH2, and the other of R1 and R2 is selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C 10 Alkyl, substituted or unsubstituted C1-C 10 Alkoxy, aryl with 6 to 20 substituted or unsubstituted ring atoms, heteroaryl with 5 to 20 substituted or unsubstituted ring atoms, aryloxy with 6 to 20 substituted or unsubstituted ring atoms, heteroaryloxy with 6 to 20 substituted or unsubstituted ring atoms, or combinations of these groups; (11) One of R1 and R2 is selected from -R5-COOH or -R6-NH2, and the other of R1 and R2 is selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkoxy, substituted or unsubstituted aryl with 6-12 ring atoms, substituted or unsubstituted heteroaryl with 5-12 ring atoms, substituted or unsubstituted aryloxy with 6-12 ring atoms, substituted or unsubstituted heteroaryloxy with 6-12 ring atoms, or a combination of these groups; (12) One of R3 and R4 is selected from -R7-COOH or -R8-NH2, and the other of R3 and R4, R3', and R4' are each independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C. 20 Alkyl, substituted or unsubstituted C1-C 20 Alkoxy, aryl group with 6 to 30 substituted or unsubstituted ring atoms, heteroaryl group with 5 to 30 substituted or unsubstituted ring atoms, aryloxy group with 6 to 30 substituted or unsubstituted ring atoms, heteroaryloxy group with 6 to 30 substituted or unsubstituted ring atoms, or combinations of these groups; (13) One of R3 and R4 is selected from -R7-COOH or -R8-NH2, and the other of R3 and R4, R3', and R4' are each independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C. 10 Alkyl, substituted or unsubstituted C1-C 10 Alkoxy, aryl with 6 to 20 substituted or unsubstituted ring atoms, heteroaryl with 5 to 20 substituted or unsubstituted ring atoms, aryloxy with 6 to 20 substituted or unsubstituted ring atoms, heteroaryloxy with 6 to 20 substituted or unsubstituted ring atoms, or combinations of these groups; (14) One of R3 and R4 is selected from -R7-COOH or -R8-NH2, and the other of R3 and R4, R3' and R4' are each independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkoxy, substituted or unsubstituted aryl with 6-12 ring atoms, substituted or unsubstituted heteroaryl with 5-12 ring atoms, substituted or unsubstituted aryloxy with 6-12 ring atoms, substituted or unsubstituted heteroaryloxy with 6-12 ring atoms, or a combination of these groups; (15) R5, R6, R7, and R8 are each independently selected from single bonds, substituted bonds, or unsubstituted bonds of C1 to C2. 20 One or more combinations of alkylene, substituted or unsubstituted aryl group having 6 to 30 ring atoms, substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, secondary amino group, -O-, -S-, and carbonyl group; (16) R5, R6, R7, and R8 are each independently selected from single bonds, substituted bonds, or unsubstituted bonds of C1 to C2. 10 One or more combinations of alkylene, substituted or unsubstituted aryl group having 6 to 20 ring atoms, substituted or unsubstituted heteroaryl group having 5 to 20 ring atoms, secondary amino group, -O-, -S-, and carbonyl group; (17) R5, R6, R7, and R8 are each independently selected from one or more combinations of single bonds, substituted or unsubstituted C1-C5 alkylene groups, substituted or unsubstituted aryl groups with 6-12 ring atoms, substituted or unsubstituted heteroaryl groups with 5-12 ring atoms, secondary amino groups, -O-, -S-, and carbonyl groups.

6. The preparation method according to claim 4, characterized in that, R 1 R 2 R' and R" are each independently selected from hydrogen, hydroxyl, substituted or unsubstituted C1 to C2. 20 Alkyl groups, groups represented by formulas (1-1) to (1-3), or combinations thereof, wherein the groups represented by formulas (1-1) to (1-3) are respectively: Where n3 and n4 are each independent integers from 0 to 4; n5 and n6 are each independent integers from 0 to 2. R0, R0', R 01 R 02 R 03 R 04 Each group is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C2. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or combinations of these groups; * indicates a connection point.

7. The preparation method according to claim 4, characterized in that, R 3 Selected from substituted or unsubstituted C1 to C2 20 Alkylene, groups represented by formulas (1-4) to (1-5), or combinations thereof, wherein the groups represented by formulas (1-4) to (1-5) are respectively: Where n7 and n8 are each independent integers from 0 to 2; R 05 R 06 Each group is independently selected from -F, -Cl, -Br, -I, hydroxyl, nitro, silyl, amino, sulfonic acid, C1-C2. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 Alkyl thioyl, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthioyl with 6 to 60 ring atoms, or combinations of these groups; * indicates a connection point.

8. The preparation method according to any one of claims 1 to 7, characterized in that, The p-type semiconductor material with fluorene groups includes one or more of poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], 2,5-bis(9-hydroxyfluorene)-thiophene, 2,5-bis(9-hydroxyfluorene)-[2,2']bidithiophene, 2,5-bis(9-enylfluorene)-3,4-cyclothiopentene, 2,5-bis(9-fluorene)-thiophene, 9-9'-difluorene, and 9-6-difluorene; and / or The compounds having unsaturated bonds include C5-C6 compounds. 30 Unsaturated fatty acids and C2-C 18 One or more of the enamines, wherein the C5-C 30 Unsaturated fatty acids include one or more of octenic acid, decenoic acid, dodecenoic acid, tetradecenoic acid, hexadecenoic acid, oleic acid, and 2-octynoic acid, wherein C2-C 18 Enamines include one or more of acrylamine, 4-penten-1-amine, 1-amino-10-undecene, and oleylamine.

9. An optoelectronic device, characterized in that, It includes a stacked anode, a hole-functional layer, an interface layer, a light-emitting layer, and a cathode. The hole-functional layer includes a P-type semiconductor material with fluorene groups, and the interface layer includes a cross-linked structure formed by the reaction of a P-type semiconductor material with fluorene groups and a compound with unsaturated bonds.

10. The optoelectronic device as described in claim 9, characterized in that, It also includes at least one of the following features (1) to (3): (1) The optoelectronic device further includes an electronic functional layer, which is located between the light-emitting layer and the cathode; (2) The P-type semiconductor material with fluorene group includes the P-type semiconductor material with fluorene group prepared by any one of claims 4 to 7; (3) The compound having unsaturated bonds includes the compound having unsaturated bonds prepared by any one of claims 4 to 5.

Images