A perovskite cell film layer processing method and perovskite cell

Abstract

The application relates to the technical field of photovoltaic cells, in particular to a perovskite cell film layer processing method and a perovskite cell. The perovskite cell film layer processing method comprises the following steps: before performing passivation treatment on a perovskite film layer, performing plasma treatment on the perovskite film layer in an oxidizing gas atmosphere, so that a lead halide layer is exposed on the surface of the perovskite film layer. According to the method, the surface performance of the perovskite film layer is improved through the plasma treatment, the subsequent passivation treatment is facilitated, the performance of the perovskite film layer is improved, and the stability and photoelectric conversion efficiency of the cell are improved.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic cell technology, and more specifically, to a method for film treatment of perovskite cells and a perovskite cell. Background Technology

[0002] Perovskite solar cells have become a research hotspot due to their excellent photoelectric performance. However, most of the widely used perovskite polycrystalline ionic crystal thin films are prepared using solution processing, which inevitably leads to high-density defects during film crystallization, including point defects and extended defects, which can be further divided into shallow-level defects and deep-level defects. These various types of defects are the main cause of severe nonradiative recombination within the device, thus limiting the improvement of photovoltaic characteristics and stability of solar cell devices. To passivate these defects, researchers have introduced various strategies to passivate perovskite surface / interface defects, including Lewis acid, Lewis base, anion and cation, and wide bandgap surface modification strategies. Common lower interface passivation techniques include SAM layer passivation, while upper interface passivation techniques mainly involve 2D material reaction passivation. There are many related technical solutions, but currently no universally applicable solution has been publicly disclosed. Different PVSKs correspond to different passivation materials, and the passivation materials have different effects depending on the PVSK.

[0003] Existing modifications to perovskite films include: 1) Introducing excess lead iodide (typically 3% or 5%) into the perovskite precursor solution, reacting excess PbI2 with the 2D material to generate 2D perovskite. 2) Adding crosslinking agents, such as TMTA or HEA, to the perovskite precursor solution, allowing the functional groups in the crosslinking agent to crosslink with FA or Pb in the perovskite component, while simultaneously binding with -NH2, P, S, etc., in the passivation material. The drawbacks of these methods include: the introduction of PbI2 and additives into PVSK affects stability; and the passivation effect varies significantly among different PVSKs.

[0004] In view of this, the present invention is hereby proposed. Summary of the Invention

[0005] One object of the present invention is to provide a perovskite solar cell film treatment method, which improves the stability of the film and enhances the electrochemical performance of the perovskite film by subjecting the perovskite film to plasma treatment before passivation treatment.

[0006] Another object of the present invention is to provide a perovskite solar cell with excellent stability and photoelectric conversion efficiency.

[0007] In order to achieve the above-mentioned objectives of the present invention, the following technical solution is adopted:

[0008] A method for treating the film layer of a perovskite solar cell, comprising:

[0009] Before passivating the perovskite film, the perovskite film is subjected to plasma treatment in an oxidizing gas atmosphere to expose the lead halide layer on the surface of the perovskite film.

[0010] In some embodiments, the depth of the exposed lead halide layer is 0.01 nm to 10 nm.

[0011] In some embodiments, the material of the perovskite film is FA. 1-n Cs n PbX3, where n ranges from 0 to 0.1, and X is any one or more of Cl, Br, and I.

[0012] In some embodiments, the lead halide layer is a lead iodide layer.

[0013] In some embodiments, the oxidizing gas includes at least one of oxygen, ozone, nitrogen dioxide, and sulfur-containing gases.

[0014] In some embodiments, the flow rate of the oxidizing gas is 10 to 50 sccm.

[0015] In some embodiments, the working pressure of the oxidizing gas is 0.02 to 0.1 Pa.

[0016] In some embodiments, the power of the plasma treatment is 20 to 100 W, and the duration of the plasma treatment is 1 to 10 minutes.

[0017] In some embodiments, the passivation treatment uses at least one of PEAI, OAI, and DABr as the passivating agent.

[0018] In some embodiments, the flow rate of the oxidizing gas is 15 to 25 sccm.

[0019] In some embodiments, the working pressure of the oxidizing gas is 0.03 to 0.045 Pa.

[0020] In some embodiments, the plasma treatment power is 40–70 W, and the plasma treatment time is 3–7 min.

[0021] In some implementations, the method further includes passivating the first charge transport layer.

[0022] In some embodiments, the first charge transport layer is subjected to plasma treatment before passivation.

[0023] In some embodiments, the power of plasma treatment of the first charge transport layer is 50-200W, and the time is 0.5-7min.

[0024] In some embodiments, the flow rate of the protective gas is 10–50 sccm, and the working pressure is 0.08–0.12 MPa.

[0025] In some embodiments, the passivating agent used to passivate the first charge transport layer is a self-contained monomolecule material.

[0026] A perovskite solar cell includes a perovskite film layer and a second passivation layer sequentially disposed thereon, wherein the perovskite film layer is prepared by the film layer treatment method of the perovskite solar cell.

[0027] In some embodiments, the perovskite solar cell includes a conductive substrate, a first charge transport layer, a perovskite film layer, a second passivation layer, a second charge transport layer, and a back electrode layer stacked sequentially; the perovskite film layer includes a perovskite body layer and a lead halide framework layer, the lead halide framework layer facing the side of the second passivation layer, and the second passivation layer covering the lead halide framework layer and contacting and coupling to the perovskite body layer.

[0028] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0029] (1) The perovskite solar cell film treatment method of the present invention involves plasma treatment of the perovskite film under oxidizing gas conditions, which can anchor the Pb on the surface and the free Pb. 2+ By forming stable chemical bonds, plasma can remove excess FAI on the film surface, reduce surface roughness, unify the passivation effect, and facilitate subsequent passivation treatment. This allows for better bonding between the second passivation layer formed by the passivation treatment and the perovskite film layer, improving the performance of the perovskite layer. It does not introduce additional components, has no side effects on stability, and significantly improves the electrochemical performance of the perovskite battery.

[0030] (2) The perovskite solar cell of the present invention has excellent structural stability and photoelectric conversion performance. Attached Figure Description

[0031] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0032] Figure 1 This is a schematic diagram of the perovskite solar cell of the present invention;

[0033] Figure 2This is a schematic diagram of the perovskite film structure after plasma treatment and passivation treatment of the present invention.

[0034] Figure label:

[0035] 1-Conductive substrate layer, 2-Hole transport layer, 3-First passivation layer, 4-Perovskite film layer, 5-Second passivation layer, 6-Electron transport layer, 7-Back electrode layer, 41-Perovskite body layer, 42-Lead halide framework layer. Detailed Implementation

[0036] The embodiments of the present invention will be described in detail below with reference to examples. However, those skilled in the art will understand that the following examples are for illustrative purposes only and should not be considered as limiting the scope of the invention. Unless otherwise specified in the examples, conventional conditions or conditions recommended by the manufacturer are followed. Reagents or instruments whose manufacturers are not specified are all commercially available conventional products.

[0037] According to one aspect of the present invention, the present invention relates to a method for film treatment of a perovskite solar cell, comprising:

[0038] Before passivating the perovskite film, the perovskite film is subjected to plasma treatment in an oxidizing gas atmosphere to expose the lead halide layer on the surface of the perovskite film.

[0039] The perovskite solar cell film treatment method of the present invention involves plasma treatment of the perovskite film under oxidizing gas conditions, which can anchor Pb on the surface and free Pb. 2+ By forming stable chemical bonds, plasma can remove excess FAI on the film surface, reduce surface roughness, and unify the passivation effect, which is beneficial for subsequent passivation treatment. This allows for better bonding between the second passivation layer formed by the passivation treatment and the perovskite film layer, improving the performance of the perovskite layer. No additional components are introduced, there are no side effects on stability, and the electrochemical performance of the perovskite solar cell is significantly improved.

[0040] In some embodiments, the depth of the exposed lead halide layer is 0.01 nm to 10 nm, for example, 0.01 nm, 0.05 nm, 0.1 nm, 0.5 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, etc.

[0041] In some embodiments, the material of the perovskite film is FA. 1-n Cs n PbX3, where n ranges from 0 to 0.1 (e.g., 0.1, 0.2, 0.5, 0.8, or 0.1), and X is any one or more of Cl, Br, and I.

[0042] In some embodiments, the lead halide layer is a lead iodide layer.

[0043] In some embodiments, the passivation process is carried out under a protective gas environment, including nitrogen and / or an inert gas, such as argon or helium.

[0044] In some embodiments, the oxidizing gas includes at least one of oxygen, ozone, nitrogen dioxide, and sulfur-containing gases, such as a combination of oxygen and ozone. A suitable oxidizing gas can combine with Pb in the perovskite film to form Pb-O, stabilizing the interface.

[0045] In some embodiments, the flow rate of the oxidizing gas is 10–50 sccm, for example, 10 sccm, 15 sccm, 20 sccm, 25 sccm, 30 sccm, 50 sccm, or any value between two values. In some embodiments, the working pressure of the oxidizing gas is 0.02–0.1 Pa, for example, 0.02 Pa, 0.03 Pa, 0.04 Pa, 0.05 Pa, 0.08 Pa, 0.1 Pa, or any value between two values. The power of the plasma treatment is 20–100 W, for example, 20 W, 30 W, 50 W, 60 W, 70 W, 80 W, 90 W, 100 W, or any value between two values. The plasma treatment time is 1 to 10 minutes, for example, 1 minute, 2 minutes, 3 minutes, 4 minutes, 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, etc. The appropriate oxidizing gas flow rate, working pressure, plasma treatment power and time of the present invention are coordinated to ensure the effect of plasma treatment, improve the surface properties of perovskite film, and facilitate subsequent passivation treatment.

[0046] In some preferred embodiments, the flow rate of the oxidizing gas is 15–25 sccm; the working pressure of the oxidizing gas is 0.03–0.045 Pa; the power of the plasma treatment is 40–70 W; and the plasma treatment time is 3–7 min. Further optimization of the flow rate, working pressure, power, and treatment time of the oxidizing gas is more beneficial for improving the surface properties of the perovskite film.

[0047] In some embodiments, the passivation treatment of the perovskite film uses a passivating agent solution, wherein the passivating agent in the passivating agent solution includes at least one selected from PEAI (phenylethylamine iodide), OAI (octylamine iodide), and DABr (diethylammonium bromide). An alcohol solvent, such as ethanol, is used. The concentration of the passivating agent solution is 1–2 mg / mL, for example, 1 mg / mL, 1.2 mg / mL, 1.5 mg / mL, 1.8 mg / mL, 2 mg / mL, etc.

[0048] In some embodiments, the method further includes passivating the first charge transport layer. In some embodiments, the first charge transport layer is subjected to plasma treatment under a protective gas atmosphere before passivation. In some embodiments, the first charge transport layer is passivated after plasma treatment. By subjecting the first charge transport layer to plasma treatment under a protective gas atmosphere, its surface is cleaned, wettability is increased, which facilitates passivation to form the first passivation layer, improves the bonding strength between the first charge layer and the first passivation layer, and enhances the stability of the first charge transport layer.

[0049] In some embodiments, the power for plasma treatment of the first charge transport layer is 50–200 W, such as 50 W, 80 W, 100 W, 120 W, 150 W, or 200 W, or any value between these two ranges. The plasma treatment time is 0.5–7 min, such as 0.5 min, 1 min, 2 min, 3 min, 4 min, 5 min, 6 min, or 7 min, or any value between these two ranges. The present invention employs appropriate plasma treatment power and treatment time for the first charge transport layer, which is more conducive to ensuring the treatment effect on the surface of the first charge transport layer and ensuring the surface wettability.

[0050] In some preferred embodiments, the plasma treatment power for the first charge transport layer is 80–120 W, and the plasma treatment time is 1.5–5 min. By further optimizing the plasma treatment power and time, the surface wetting performance of the treated first charge transport layer is further improved.

[0051] In some embodiments, the flow rate of the protective gas is 10–50 sccm, such as 10 sccm, 20 sccm, 30 sccm, 40 sccm, 50 sccm, etc., and the operating pressure is 0.08–0.12 MPa, such as 0.08 MPa, 0.09 MPa, 0.1 MPa, 0.12 MPa, etc. Suitable protective gas flow rates and operating pressures are more conducive to plasma treatment of the first charge transport layer, improving its surface properties.

[0052] In some embodiments, the passivation treatment of the first charge transport layer is performed using a passivating agent solution. The passivating agent in the passivating agent solution is a self-assembled monomolecular material, including at least one selected from Me-4PACz (N-methyl-4-(phenylphosphonic acid)benzamide), Ph-4PACz (N-phenyl-4-(phenylphosphonic acid)benzamide), and tBu-4PACz (N-tert-butyl-4-(phenylphosphonic acid)benzamide). The solvent is an alcohol solvent, such as isopropanol. The concentration of the passivating agent solution is 0.3–0.8 mg / mL, for example, 0.3 mg / mL, 0.4 mg / mL, 0.5 mg / mL, 0.6 mg / mL, or 0.8 mg / mL.

[0053] According to another invention of the present invention, the present invention also relates to a perovskite solar cell, comprising a perovskite film layer and a second passivation layer disposed sequentially, wherein the perovskite film layer is prepared by the film layer processing method of the perovskite solar cell.

[0054] The perovskite solar cell of the present invention has excellent structural stability and photoelectric conversion performance.

[0055] In some embodiments, the perovskite solar cell includes a conductive substrate, a first charge transport layer, a perovskite film layer, a second passivation layer, a second charge transport layer, and a back electrode layer stacked sequentially; the perovskite film layer includes a perovskite body layer and a lead halide framework layer, the lead halide framework layer facing the side of the second passivation layer, and the second passivation layer covering the lead halide framework layer and contacting and coupling to the perovskite body layer.

[0056] In some embodiments, the thickness of the first charge transport layer is 10–30 nm, and the material includes polymer materials and / or inorganic oxide materials. The polymer materials include polyethylene glycol (PEG), polycaprolactone (PCL), etc., and the inorganic oxide materials include at least one of NiOx (e.g., NiO), titanium oxide (TiO2), zinc oxide (ZnO), and scandium oxide (Sc2O3).

[0057] In some implementations, the thickness of the conductive substrate layer is 400–600 nm.

[0058] In some embodiments, the surface of the first charge transport layer has a first passivation layer, which is in contact with the perovskite film layer. The thickness of the first passivation layer is 1 to 10 nm, for example, 1.5 nm, 2 nm, 5 nm, 7 nm, or 10 nm.

[0059] In some embodiments, the thickness of the perovskite film is 400–600 nm.

[0060] In some embodiments, the thickness of the second passivation layer on the surface of the perovskite film is 1 to 10 nm, such as 1.5 nm, 2 nm, 5 nm, 7 nm or 10 nm.

[0061] In some embodiments, the second charge transport layer includes a C60 layer and / or an IWO layer, wherein the thickness of the C60 layer is 20–35 nm and the thickness of the IWO layer is 40–60 nm.

[0062] In some embodiments, the electrode layer includes at least one selected from ITO, Cu, aluminum, and silver. In some embodiments, the electrode layer is a composite layer of ITO and Cu, wherein the thickness of the ITO layer is 35–50 nm and the thickness of the Cu layer is 40–60 nm.

[0063] In some preferred embodiments, a method for preparing a perovskite solar cell includes the following steps:

[0064] (a) FTO is cleaned with detergent, pure water and ethanol, and then dried to obtain a conductive substrate layer.

[0065] (b) A composite charge transport layer is sequentially prepared on a conductive substrate, comprising: preparing a first charge transport layer NiOx by sputtering; subjecting the surface of the first charge transport layer to plasma treatment under a protective gas atmosphere, wherein the plasma treatment power is 50–200 W, the plasma treatment time is 0.5–7 min, the flow rate of the protective gas is 10–50 sccm, and the working pressure is 0.08–0.12 MPa; and then coating with a passivating agent solution with a concentration of 0.3–1 mg / mL, wherein the passivating agent is selected from Me-4PACz, Ph-4PACz, or tBu-4PACz, to obtain a first passivation layer.

[0066] (c) Coating a perovskite film material (FA) onto the first passivation layer. 1-n Cs n PbX3 (where n ranges from 0 to 0.1, and X is any one or more of Cl, Br, and I) is used as the absorber layer; the perovskite film is subjected to plasma treatment in an oxidizing gas atmosphere, with a flow rate of 10 to 50 sccm, a working pressure of 0.02 to 0.1 Pa, a plasma treatment power of 20 to 100 W, and a plasma treatment time of 1 to 10 min; so that the surface of the perovskite film is exposed to a lead halide layer with a depth of 0.01 nm to 10 nm; then a second passivating agent solution with a concentration of 1 to 2 mg / mL is coated, and the second passivating agent is selected from PEAI, OAI, or DABr to obtain a second passivation layer.

[0067] (d) A C60 and IWO layer is deposited on the surface of the second passivation layer as a mixed electron transport layer to obtain the second charge transport layer.

[0068] (e) A composite electrode ITO layer and a Cu layer are sputtered onto the surface of the second charge transport layer to obtain the electrode layer.

[0069] The following explanation, combined with specific embodiments and comparative examples, further illustrates the point.

[0070] Example 1

[0071] A perovskite battery, such as Figure 1 and Figure 2 As shown, the perovskite film includes a conductive substrate 1, a hole transport layer 2, a first passivation layer 3, a perovskite film layer 4, a second passivation layer 5, an electron transport layer 6, and a back electrode layer 7, which are stacked sequentially. The perovskite film layer 4 includes a perovskite body layer 41 and a lead halide framework layer 42. The lead halide framework layer 42 faces the second passivation layer 5, and the second passivation layer 5 is deposited on the lead halide framework layer 42 and is contacted and coupled to the perovskite body layer 41.

[0072] The method for preparing the perovskite solar cell in this embodiment includes the following steps:

[0073] (1) FTO was cleaned with detergent, pure water and ethanol and dried to obtain conductive substrate layer 1 with a thickness of 550nm.

[0074] (2) A hole transport layer 2 (NiO) is prepared on one side surface of the conductive substrate layer 1 by sputtering. x The hole transport layer 2 has a thickness of 20 nm. A passivation material Me-4PACz with a concentration of 0.5 mg / mL is coated on the hole transport layer 2 to obtain the first passivation layer 3 with a thickness of 2 nm.

[0075] (3) A layer of FA is coated on the surface of the first passivation layer 3. 0.9 Cs 0.1 A PbI3 thin film with a thickness of 500 nm was used as the absorber layer. The surface of the absorber layer was subjected to plasma treatment under an O2 atmosphere with a flow rate of 20 sccm, a working pressure of 0.04 Pa, a power of 50 W, and a time of 2 min, so as to expose the lead halide framework layer 42 on the surface of the absorber layer, thus obtaining the perovskite film layer 4; then a 2D passivation material PEAI with a concentration of 1.5 mg / mL was coated to obtain the second passivation layer 5 with a thickness of 2 nm.

[0076] (4) A C60 and IWO layer is deposited on the surface of the second passivation layer 5 as a mixed layer, with the C60 layer having a thickness of 30 nm and the IWO layer having a thickness of 50 nm, to obtain the electron transport layer 6.

[0077] (5) A composite electrode ITO layer and a Cu layer are sputtered on the surface of electron transport layer 6. The thickness of the ITO layer is 40 nm and the thickness of the Cu layer is 50 nm to obtain the back electrode layer 7.

[0078] Example 2

[0079] A method for preparing a perovskite solar cell differs from that in Example 1 in that:

[0080] In step (3), the plasma treatment time is 5 minutes.

[0081] Example 3

[0082] A method for preparing a perovskite solar cell differs from that in Example 1 in that:

[0083] In step (3), the plasma treatment time is 10 minutes.

[0084] Example 4

[0085] A method for preparing a perovskite solar cell differs from that in Example 1 in that:

[0086] In step (3), the plasma treatment power is 100W and the time is 5min.

[0087] Example 5

[0088] A perovskite battery, such as Figure 1 and Figure 2 As shown, the perovskite film includes a conductive substrate 1, a hole transport layer 2, a first passivation layer 3, a perovskite film layer 4, a second passivation layer 5, an electron transport layer 6, and a back electrode layer 7, which are stacked sequentially. The perovskite film layer 4 includes a perovskite body layer 41 and a lead halide framework layer 42. The lead halide framework layer 42 faces the second passivation layer 5, and the second passivation layer 5 is deposited on the lead halide framework layer 42 and is contacted and coupled to the perovskite body layer 41.

[0089] The method for preparing the perovskite solar cell in this embodiment includes the following steps:

[0090] (1) FTO was cleaned with detergent, pure water and ethanol and dried to obtain conductive substrate layer 1 with a thickness of 550nm.

[0091] (2) A hole transport layer 2 (NiO) is prepared on one side surface of the conductive substrate layer 1 by sputtering. x The film thickness was 20 nm; then NiO was treated under an Ar atmosphere. x The surface was subjected to plasma treatment at a power of 200W for 2 minutes, with a protective gas flow rate of 30 sccm and a working pressure of 0.1 MPa. A passivation material, Me-4PACz, at a concentration of 0.5 mg / mL, was then coated to obtain the first passivation layer 3, with a thickness of 2 nm.

[0092] (3) A layer of FA is coated on the surface of the first passivation layer 3. 0.9 Cs 0.1A PbI3 thin film with a thickness of 500 nm was used as the absorber layer. The surface of the absorber layer was subjected to plasma treatment in an O2 atmosphere with a flow rate of 20 sccm, a working pressure of 0.04 Pa, a power of 50 W, and a time of 5 min, so as to expose the lead halide framework layer 42 on the surface of the absorber layer, thus obtaining the perovskite film layer 4. Then, a 2D passivation material PEAI with a concentration of 1.5 mg / mL was coated to obtain the second passivation layer with a thickness of 2 nm.

[0093] (4) A C60 and IWO layer is deposited on the surface of the second passivation layer 5 as a mixed layer, with the C60 layer having a thickness of 30 nm and the IWO layer having a thickness of 50 nm, to obtain the electron transport layer 6.

[0094] (5) A composite electrode ITO layer and a Cu layer are sputtered on the surface of electron transport layer 6. The thickness of the ITO layer is 40 nm and the thickness of the Cu layer is 50 nm to obtain the back electrode layer 7.

[0095] Example 6

[0096] A method for preparing a perovskite solar cell differs from that in Example 5 in that:

[0097] In step (2), the plasma treatment power is 80W and the time is 3min.

[0098] In step (3), the flow rate of O2 is 15 sccm, the working pressure is 0.03 Pa, the power of plasma treatment is 40 W, and the time is 7 min.

[0099] Example 7

[0100] A method for preparing a perovskite solar cell differs from that in Example 5 in that:

[0101] In step (2), the plasma treatment power is 120W and the time is 0.8min.

[0102] In step (3), the flow rate of O2 is 215 sccm, the working pressure is 0.045 Pa, the plasma treatment power is 60 W, and the time is 3 min.

[0103] Example 8

[0104] A method for preparing a perovskite solar cell differs from that in Example 5 in that:

[0105] In step (2), the plasma treatment power is 200W and the time is 0.5min.

[0106] In step (3), the flow rate of O2 is 10 sccm, the working pressure is 0.02 Pa, the power of plasma treatment is 100 W, and the time is 1 min.

[0107] Example 9

[0108] A method for preparing a perovskite solar cell differs from that in Example 5 in that:

[0109] In step (2), the plasma treatment power is 80W and the time is 6min.

[0110] In step (3), the flow rate of O2 is 30 sccm, the working pressure is 0.05 Pa, the power of plasma treatment is 20 W, and the time is 10 min.

[0111] Comparative Example 1

[0112] A method for preparing a perovskite solar cell differs from that in Example 5 in that:

[0113] In step (3), plasma treatment is not performed; passivation treatment is performed directly.

[0114] Comparative Example 2

[0115] A method for preparing a perovskite solar cell differs from that in Example 1 in that:

[0116] In step (3), plasma treatment is not performed; passivation treatment is performed directly.

[0117] Experimental Example

[0118] The perovskite solar cells of each embodiment and comparative example were subjected to performance tests, and the test results are shown in Table 1. PCE represents photoelectric conversion efficiency; Voc represents open-circuit voltage; Isc represents short-circuit current; EF represents fill factor. Test conditions: AG1.5, 3A-level light source, scan time 20s, step 0.1V.

[0119] Table 1 Performance test results of perovskite solar cells

[0120]

[0121]

[0122] As shown in Table 1, the perovskite solar cell preparation methods of Examples 1 to 4 of the present invention only perform passivation pretreatment on the perovskite film layer. By using appropriate plasma treatment conditions, the surface properties of the perovskite film layer are improved, which is beneficial to the preparation and performance improvement of the second passivation layer, thereby improving the photoelectric conversion performance of the obtained perovskite solar cell.

[0123] The perovskite solar cell preparation methods of Examples 5-9 of this invention involve both passivation pretreatment of the first charge transport layer and passivation pretreatment of the perovskite film layer. The combination of the two passivation pretreatments results in a more significant improvement in the electrochemical performance of the obtained perovskite solar cell.

[0124] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for treating the film layer of a perovskite solar cell, characterized in that, include: Before passivating the perovskite film, the perovskite film is subjected to plasma treatment in an oxidizing gas atmosphere to expose the lead halide layer on the surface of the perovskite film.

2. The perovskite solar cell film treatment method according to claim 1, characterized in that, It includes at least one of the following features (1) to (3): (1) The depth of the exposed lead halide layer is 0.01 nm to 10 nm; (2) The material of the perovskite film is FA. 1-n Cs n PbX3, where n ranges from 0 to 0.1, and X is any one or more of Cl, Br, and I; (3) The lead halide layer is a lead iodide layer.

3. The perovskite solar cell film treatment method according to claim 1, characterized in that, It includes at least one of the following features (1) to (5): (1) The oxidizing gas includes at least one of oxygen, ozone, nitrogen dioxide and sulfur-containing gas; (2) The flow rate of the oxidizing gas is 10-50 sccm; (3) The working pressure of the oxidizing gas is 0.02 to 0.1 Pa; (4) The power of the plasma treatment is 20-100W, and the plasma treatment time is 1-10min; (5) The passivating agent used in the passivation treatment includes at least one of PEAI, OAI and DABr.

4. The perovskite solar cell film treatment method according to claim 3, characterized in that, It includes at least one of the following features (1) to (3): (1) The flow rate of the oxidizing gas is 15-25 sccm; (2) The working pressure of the oxidizing gas is 0.03 to 0.045 Pa; (3) The power of the plasma treatment is 40-70W and the plasma treatment time is 3-7min.

5. The perovskite solar cell film treatment method according to claim 1, characterized in that, Also includes: The first charge transport layer is passivated.

6. The perovskite solar cell film treatment method according to claim 5, characterized in that, Before passivating the first charge transport layer, the method further includes: performing plasma treatment on the first charge transport layer under a protective gas atmosphere.

7. The perovskite solar cell film treatment method according to claim 6, characterized in that, It includes at least one of the following features (1) to (2): (1) The power of plasma treatment of the first charge transport layer is 50-200W and the time is 0.5-7min; (2) The flow rate of the protective gas is 10-50 sccm and the working pressure is 0.08-0.12 MPa.

8. The perovskite solar cell film treatment method according to claim 5, characterized in that, The passivating agent used to passivate the first charge transport layer is a self-assembled monomolecule material.

9. A perovskite battery, characterized in that, It includes a perovskite film layer and a second passivation layer arranged sequentially, wherein the perovskite film layer is prepared by the perovskite solar cell film layer treatment method according to any one of claims 1 to 8.

10. The perovskite solar cell according to claim 9, characterized in that, The perovskite solar cell includes a conductive substrate layer, a first charge transport layer, a perovskite film layer, a second passivation layer, a second charge transport layer, and a back electrode layer stacked sequentially. The perovskite film layer includes a perovskite body layer and a lead halide framework layer. The lead halide framework layer faces the second passivation layer, and the second passivation layer is coated on the lead halide framework layer and is contacted and coupled to the perovskite body layer.

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