Optoelectronic device and method of manufacturing the same

Abstract

The application discloses an optoelectronic device and a preparation method thereof. The optoelectronic device comprises an interface layer, and a material of the interface layer comprises a crosslinked product of a P-type semiconductor material with a fluorene group and a compound with an unsaturated bond. The optoelectronic device has high luminous efficiency and stability.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to an optoelectronic device and its fabrication method. Background Technology

[0002] Optoelectronic devices are devices fabricated based on the photoelectric effect, typically including an anode, a hole-functional layer, a light-emitting layer, and a cathode. The hole-functional layer usually uses a p-type semiconductor material. During operation, the p-type semiconductor material continuously transports holes, but it also becomes unstable due to the loss or gain of electrons. This instability causes a reaction with the light-emitting layer material, affecting both the light-emitting and hole-functional layers and leading to a decrease in device performance. Summary of the Invention

[0003] In view of this, this application provides an optoelectronic device and a method for fabricating the same.

[0004] The embodiments of this application are implemented as follows:

[0005] In a first aspect, embodiments of this application provide a method for fabricating an optoelectronic device, comprising the following steps:

[0006] A device preform is provided, the device preform comprising a stacked anode and a preformed hole functional layer, wherein the material of the preformed hole functional layer comprises a P-type semiconductor material having fluorene groups;

[0007] A mixed solution is provided, the mixed solution comprising a compound having unsaturated bonds and a solvent. The device preform is placed in the mixed solution and subjected to heat treatment and / or ultraviolet treatment. The portion of the preformed hole functional layer away from the anode reacts with the compound having unsaturated bonds to form an interface layer. The portion of the preformed hole functional layer between the anode and the interface layer is a hole functional layer.

[0008] A light-emitting layer and a cathode are disposed on the interface layer to obtain a photoelectric device;

[0009] The hole functional layer is made of the p-type semiconductor material with fluorene groups, and the interface layer is made of the p-type semiconductor material with fluorene groups and the cross-linked product of the compound with unsaturated bonds.

[0010] Secondly, embodiments of this application provide an optoelectronic device prepared by the preparation method described above.

[0011] The optoelectronic device fabrication method provided in this application produces optoelectronic devices with high luminous efficiency and stability. Attached Figure Description

[0012] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0013] Figure 1 This is a flowchart of a method for fabricating an optoelectronic device according to an embodiment of this application;

[0014] Figure 2 This is a schematic diagram of a method for fabricating an optoelectronic device provided in an embodiment of this application;

[0015] Figure 3 This is a schematic diagram of the structure of an optoelectronic device provided in an embodiment of this application.

[0016] Figure label:

[0017] Optoelectronic device 100; anode 10; pre-fabricated hole functional layer 20; hole functional layer 21; interface layer 30; light-emitting layer 40; cathode 50; electronic functional layer 60. Detailed Implementation

[0018] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" specifically refer to the drawing directions in the accompanying drawings. In addition, in the description of this application, the term "including" means "including but not limited to". Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and conciseness and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within that range. For example, it should be assumed that the description of a range from 1 to 6 specifically discloses subranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the range referred to.

[0019] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0020] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0021] In this application, "substitution" means that the hydrogen atom in the substituent is replaced by the substituent. "Substituted or unsubstituted" means that the defined group may or may not be substituted. It is understood that when the group is substituted by a substituent, the number of substituents may be one, two, three or more, and when the number of substituents is two or more, the substituents may be the same or different.

[0022] In this application, "ring atom number" refers to the number of ring atoms constituting the ring itself in a cyclic compound (e.g., a monocyclic or polycyclic compound) obtained by atomic bonding, i.e., the number of atoms forming the ring. When the ring is substituted by a substituent, the atoms contained in the substituent are not included in the ring atom count. The same applies to the "ring atom number" described below unless otherwise specified. For example, the benzene ring has 6 ring atoms, the naphthalene ring has 10 ring atoms, and the thiophene group has 5 ring atoms.

[0023] In this application, "aryl or aromatic group" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl, and for polycyclic rings, at least one of them is an aromatic ring system. For example, "substituted or unsubstituted aryl having 6 to 60 ring atoms" refers to an aryl containing 6 to 60 ring atoms, preferably a substituted or unsubstituted aryl having 6 to 30 ring atoms, more preferably a substituted or unsubstituted aryl having 6 to 18 ring atoms, and particularly preferably a substituted or unsubstituted aryl having 6 to 14 ring atoms, and optionally further substituted on the aryl group; suitable examples include, but are not limited to: phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthrene, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl and their derivatives. It is understandable that multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamines, and diaryl ether systems should also be included in the definition of aryl. "Arylidene" refers to a group derived from an aryl group by removing one more hydrogen atom.

[0024] In this application, "heteroaryl or heteroaromatic group" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom, which can be an N atom, O atom, S atom, Si atom, P atom, etc. For example, "substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms" refers to a heteroaryl group having 5 to 60 ring atoms, preferably a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl group having 5 to 18 ring atoms, and particularly preferably a substituted or unsubstituted heteroaryl group having 5 to 14 ring atoms, and the heteroaryl group may optionally be further substituted; suitable examples include, but are not limited to: thiophene, furanyl, pyrrole, diazolyl, triazolyl, imidazole, pyridyl, bipyridyl, pyrimidinyl, etc. Triazinyl, acridineyl, pyridazinyl, pyrazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridinopyrimidineyl, pyridinopyrazinyl, benzothiopheneyl, benzofuranyl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienothienopheneyl, furanolopyrrolyl, furanolofuranyl, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, o-diazonyl, phenanthridineyl, primidyl, quinazolinoneyl, dibenzothiopheneyl, dibenzofuranyl, carbazoleyl and their derivatives. "Heteroarylene" refers to a group derived from a heteroarylene group by removing one hydrogen atom.

[0025] In this application, "alkyl" can mean straight-chain, branched, and / or cyclic alkyl. The number of carbon atoms in an alkyl group can be 1 to 30, 1 to 25, 1 to 20, 1 to 15, 1 to 10, or 1 to 6. Phrases containing this term, such as "C 1-9"Alkyl" refers to an alkyl group containing 1 to 9 carbon atoms, and each time it appears, it can independently be a C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, and cyclopentyl. 1-Methylpentyl, 3-Methylpentyl, 2-Ethylpentyl, 4-Methyl-2-pentyl, n-Hexyl, 1-Methylhexyl, 2-Ethylhexyl, 2-Butylhexyl, Cyclohexyl, 4-Methylcyclohexyl, 4-tert-butylcyclohexyl, n-Heptyl, 1-Methylheptyl, 2,2-Dimethylheptyl, 2-Ethylheptyl, 2-Butylheptyl, n-Octyl, tert-Octyl, 2-Ethyloctyl, 2-Butyloctyl, 2-Hexyloctyl, 3,7-Dimethyloctyl, Cyclooctyl Nonyl, decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, undecyl, dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, heptadecanyl, octadecyl, nonadecanyl, eicosyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, dodecyl, trialkyl, tetradecyl, pentadecyl, hexadecyl, heptadecanyl, octadecyl, nonadecanyl, triadecyl, etc. "Alkylene" refers to a group derived from an alkyl group by removing one hydrogen atom.

[0026] In this application, "alkoxy" refers to a group with the structure "-O-alkyl", that is, an alkyl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), tert-butoxy (-OC(CH3)3 or -OtBu), and n-hexyloxy (-O-C6H). 13 ), n-decanoyloxy (-OC) 10 H 21 ), n-dodecyloxy (-OC) 12 H 25 ).

[0027] In this application, "aryloxy" refers to a group with the structure "-O-aryl", that is, an aryl group as defined above is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to, phenoxy, naphthoxy, etc. "Heteroaryloxy" refers to a group with the structure "-O-heteroaryl", that is, a heteroaryl group as defined above is attached to other groups via an oxygen atom. "Alkoxyaryl" refers to a group with the structure "-aryl-alkoxy", that is, an alkoxy group as defined above is attached to other groups via an aryl group; for example, hexyloxyphenyl represents -ph-OC6H. 13 , where ph refers to phenyl.

[0028] In this application, "combination of multiple (groups)" includes all suitable combinations of any two or more of the listed items. For example, it may refer to the substitution of one hydrogen atom in one group by one or more groups; for instance, a combination of alkyl and mercapto may be "-S-alkyl," meaning that the alkyl group as defined above is linked to other groups via a sulfur atom. Suitable examples of phrases containing this term include, but are not limited to: methylthio (-S-CH3 or -SMe), ethylthio (-S-CH2CH3 or -SEt), tert-butylthio (-SC(CH3)3 or -StBu), and n-hexanethio (-S-C6H). 13 ), n-Decadecylthio (-SC) 10 H 21 ), n-Dodecylthio (-SC) 12 H 25 Similarly, the combination of aryl and mercapto groups can be "-S-aryl".

[0029] In this application, amino represents -NR 1 R 2 , where R 1 R 2 Each group independently represents either H or an alkyl group; that is, the amino group can be -NH2, -NH (alkyl), or -N alkyl (alkyl). The secondary amino group can be -NR. 1 -

[0030] In this application, "halogen group" represents -Cl, -Br, -F or -I; hydroxyl group represents -OH; carboxyl group represents -COOH; nitro group represents -NO2; sulfonic acid group represents -SO3H; mercapto group represents -SH; cyano group represents *-C≡N.

[0031] In related technologies, the hole functional layer material, while continuously transporting holes, undergoes reduction / oxidation due to the loss or gain of some electrons, resulting in an unstable state. When the hole functional layer material is in an unstable state, it is prone to cross-linking with the surface ligands of quantum dots in the light-emitting layer. This can lead to bonding between the ligands and the active groups of the hole functional layer material. While this can promote hole injection to some extent, it also reduces conductive π bonds, affecting transport performance, causing hole interface accumulation, and impacting interface stability. On the other hand, ligands are easily detached due to interaction with active groups, leading to an increase in surface defects of quantum dots at the interface between the hole functional layer and the light-emitting layer, thereby affecting device performance.

[0032] In view of this, embodiments of this application provide an optoelectronic device and a method for fabricating the same, aiming to solve the problem that the hole functional layer and the light-emitting layer are easily damaged during the aging process of the device, thereby affecting the light-emitting performance of the device.

[0033] Firstly, please refer to Figure 1 and Figure 2 This application provides a method for fabricating an optoelectronic device 100, the method comprising the following steps:

[0034] S10, providing a device preform, the device preform including a stacked anode 10 and a preformed hole functional layer 20, the material of the preformed hole functional layer 20 including a P-type semiconductor material having fluorene groups;

[0035] S20, a mixed solution is provided, the mixed solution comprising a compound having unsaturated bonds and a solvent, the device preform is placed in the mixed solution, and subjected to heat treatment and / or ultraviolet treatment, the portion of the preformed hole functional layer 20 away from the anode 10 reacts with the compound having unsaturated bonds to form an interface layer 30, the portion of the preformed hole functional layer 20 between the anode 10 and the interface layer 30 is a hole functional layer 21;

[0036] S30, a light-emitting layer 40 and a cathode 50 are disposed on the interface layer 30 to obtain a photoelectric device 100;

[0037] The hole functional layer 21 is made of the p-type semiconductor material with fluorene groups, and the interface layer 30 is made of the p-type semiconductor material with fluorene groups and the cross-linked product of the compound with unsaturated bonds.

[0038] It should be noted that during heat treatment and / or ultraviolet treatment, compounds with unsaturated bonds can interact with P-type semiconductor materials with fluorene groups to produce cross-links and form cross-linked structures, thereby achieving pre-activation and performance optimization of the pre-fabricated hole functional layer 20.

[0039] It should also be noted that the compound with unsaturated bonds cross-links with the portion of the P-type semiconductor material with fluorene groups on the side of the pre-fabricated hole functional layer 20 facing away from the anode 10 to form a cross-linking product, thus forming the interface layer 30. The portion of the P-type semiconductor material with fluorene groups on the side closer to the anode 10, however, does not undergo cross-linking and forms the hole functional layer 21. In other words, a portion of the pre-fabricated hole functional layer 20 participates in the reaction with the compound with unsaturated bonds to form the interface layer 30, while the portion that does not participate in the formation of the interface layer 30 forms the hole functional layer 21. Because the cross-linking reaction is difficult to completely control, there may be a partially fused structure between the interface layer 30 and the hole functional layer 21, meaning there may not be a completely clear boundary.

[0040] The method for fabricating the optoelectronic device 100 provided in this application involves introducing a compound with unsaturated bonds onto the surface of a pre-fabricated hole functional layer 20, followed by heat treatment and / or ultraviolet treatment. The heat and / or ultraviolet light energy triggers the interaction between the compound with unsaturated bonds and a P-type semiconductor material with fluorene groups, resulting in cross-linking and the formation of a hole functional layer 21 and an interface layer 30. The interface layer 30 pre-activates the hole functional layer 21 and enhances its stability through the action of the unsaturated compounds. Subsequently, a light-emitting layer 40 and a cathode 50 are disposed on the interface layer 30 to fabricate the optoelectronic device 100. The interface layer 30 prevents direct contact and reaction between the hole functional layer 21 and the light-emitting layer 40, avoiding the reduction of the light-emitting performance of the light-emitting layer 40 due to the interaction between the P-type semiconductor material with fluorene groups and the ligands in the light-emitting layer 40. The optoelectronic device 100 fabricated by the method provided in this application exhibits high luminous efficiency and stability, and a long service life.

[0041] It should be noted that, since the interface layer 30 has a certain thickness, the effects of heat treatment and / or ultraviolet treatment vary in depth. In other words, the material in the interface layer 30 has a gradient change from the anode 10 to the cathode 50. The cross-linking products of compounds with unsaturated bonds and P-type semiconductor materials with fluorene groups are less near the anode 10, while the concentration of cross-linking products increases along the direction near the cathode 50.

[0042] In some embodiments, the pre-made hole functional layer 20 includes one or more of a pre-made hole injection layer and a pre-made hole transport layer.

[0043] In some embodiments, when the pre-fabricated hole functional layer 20 includes the pre-fabricated hole injection layer or the pre-fabricated hole transport layer, the material of the pre-fabricated hole injection layer or the pre-fabricated hole transport layer includes a P-type semiconductor material having fluorene groups. The P-type semiconductor material having fluorene groups includes an organic compound having fluorene groups or an inorganic compound with fluorene groups attached to its surface; wherein the inorganic compound includes one or more of NiO, WO3, CuO, MoO2, MoS2, MoSe2, and CuS. In the inorganic compound with fluorene groups attached to its surface, the fluorene groups are interconnected with the surface of the inorganic compound.

[0044] In some embodiments, the structural formula of the p-type semiconductor material having fluorene groups includes:

[0045]

[0046] Where X is CR4R5 or

[0047] n is selected from any integer from 1 to 50;

[0048] R1 is selected from single bond, substituted or unsubstituted C1 to C1. 30 One or more combinations of alkylene, substituted or unsubstituted aryl group having 6 to 60 ring atoms, substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms, secondary amino group, -O-, -S-, and carbonyl group;

[0049] R2, R3, R4, R5, R6, and R7 are each independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, and substituted or unsubstituted C1-C6 groups. 30 Alkyl, substituted or unsubstituted C1-C 30 One or more of the following: alkoxy group, aryl group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryl group with 5 to 60 substituted or unsubstituted ring atoms, aryloxy group with 6 to 60 substituted or unsubstituted ring atoms, and heteroaryloxy group with 5 to 60 substituted or unsubstituted ring atoms; R4 and R5 are cyclic or acyclic, and R6 and R7 are cyclic or acyclic.

[0050] The substituents in R2, R3, R4, R5, R6, and R7 are each independently selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, C1-C6. 10 Alkyl, C1-C 10 One or more combinations of alkoxy groups and aryl groups having 6 to 20 ring atoms.

[0051] In some embodiments, R1 is selected from single-bonded, substituted, or unsubstituted C1 to C2 bonds. 30One or more combinations of alkylene, substituted or unsubstituted aryl group having 6 to 30 ring atoms, substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, secondary amino group, -O-, -S-, and carbonyl group.

[0052] In some embodiments, R2, R3, R4, R5, R6, and R7 are each independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, and substituted or unsubstituted C1-C6 groups. 15 Alkyl, substituted or unsubstituted C1-C 15 One or more of the following: alkoxy, aryl with 6 to 30 substituted or unsubstituted ring atoms, heteroaryl with 5 to 30 substituted or unsubstituted ring atoms, aryloxy with 6 to 30 substituted or unsubstituted ring atoms, and heteroaryloxy with 5 to 30 substituted or unsubstituted ring atoms.

[0053] In some embodiments, the organic compounds having fluorene groups include, but are not limited to, poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(4,4'-(N-(4-n-butyl)phenyl)-diphenylamine)](TFB) and poly((9,9-dioctylfluorenyl-2,7-diyl)-alt-(9-(2-ethylhexyl)-carbazole-3,6-diyl))(PF8Cz) One or more of the following: 2,5-bis(9-hydroxyfluorene)-thiophene (BHFT), 2,5-bis(9-hydroxyfluorene)-[2,2']bidithiophene (BHFBT), 2,5-bis(9-enylfluorene)-3,4-cyclothiopentene (BFTQ), 2,5-bis(9-fluorenyl)-thiophene (BFT), 9-9'-difluorene (9-9'BF), and 9-6-difluorene (9-6BF).

[0054] In some embodiments, when the pre-fabricated hole functional layer 20 includes the pre-fabricated hole injection layer and the pre-fabricated hole transport layer, the pre-fabricated hole injection layer is located between the anode 10 and the pre-fabricated hole transport layer. The material of the pre-fabricated hole transport layer can be a P-type semiconductor material with fluorene groups as described above, and the material of the pre-fabricated hole injection layer can be a hole injection material commonly used in the art, including but not limited to 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'- Diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, 4,4',4'-tris(N-3- (Methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-)phenylenevinylene, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine Aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthyl-1-yl)-N,N'-diphenylbenzidine, spironolactone (NPB), microcrystalline cellulose, and tetracyanoquinone dimethyl ester;The inorganic P-type semiconductor material comprises one or more of the following: nanocrystalline diamond, doped graphene, undoped graphene, first-doped metal oxide particles, first-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the first-doped metal oxide particles and the first-undoped metal oxide particles each independently comprise one or more of the following: MoO3, WO3, NiO, CrO3, CuO, and V2O5. The doping element in the first-doped metal oxide particles comprises one or more of the following: Mo, W, Ni, Cr, Cu, and V. The metal sulfide comprises C. The metal selenide comprises one or more of uS, MoS3, and WS3, and the metal nitride comprises one or more of MoSe3 and WSe3. The metal nitride comprises p-type gallium nitride. The doping amount of the dopant element in the first doped metal oxide particle is 0.1 wt% to 20 wt%, for example, it can be 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, or any range between two of the above values.

[0055] In some embodiments, the thickness of the pre-fabricated hole functional layer 20 can be 20nm to 60nm; for example, it can be 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 58nm, 60nm, or any range between two of the above values. It should be noted that in this application, the thickness of each film layer can be obtained by a step tester, or by the following method: selecting several test areas on the film (for example, selecting the four corners and the middle area of ​​the film), measuring the thickness values ​​of several areas using an atomic force microscope (AFM), and then calculating the average of the several thickness values ​​to obtain the average thickness.

[0056] It should be noted that the unsaturated bonds refer to double or triple bonds, such as carbon-carbon double bonds, carbon-oxygen double bonds, carbon-sulfur double bonds, carbon-carbon triple bonds, carbon-nitrogen triple bonds, etc.

[0057] In some embodiments, the compound having unsaturated bonds also has coordinating groups, such as carboxyl and / or amino groups.

[0058] In some embodiments, the compound having unsaturated bonds has the following structural formula: R8-(CR9R) 10 ) m1 -(CR 11 =CR 12 ) m2 -(CR13 R 14 ) m3 -(OCH2) m4 -(CR 15 =CR 16 ) m5 -(CR 17 R 18 ) m6 -R 19 ;

[0059] Where m1, m2, m3, m4, m5, and m6 are each independently selected from any integer from 0 to 10, and m2+m5>0, 0<m1+m2+m3+m4+m5+m6<30;

[0060] R8, R 19 Each is independently selected from -CH3, -SH, -NH2, -NO2, -CN, -COOH, -COOR 20 However, it is not simultaneously selected from -CH3;

[0061] R9, R 10 R 11 R 12 R 13 R 14 R 15 R 16 R 17 R 18 R 19 Each group is independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C. 30 Alkyl, substituted or unsubstituted C1-C 30 One or more of the following: alkoxy, aryl with 6 to 60 substituted or unsubstituted ring atoms, heteroaryl with 5 to 60 substituted or unsubstituted ring atoms, aryloxy with 6 to 60 substituted or unsubstituted ring atoms, and heteroaryloxy with 5 to 60 substituted or unsubstituted ring atoms;

[0062] R 20 Selected from H, D, substituted or unsubstituted C1-C 30 One or more of alkyl, aryl with 6 to 60 substituted or unsubstituted cyclic atoms, and heteroaryl with 5 to 60 substituted or unsubstituted cyclic atoms;

[0063] R9, R 10 R 11 R 12 R 13 R 14 R 15 R 16 R 17 R18 R 19 R 20 When substituted, each substituent is independently selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, C1-C1. 10 Alkyl, C1-C 10 One or more combinations of alkoxy groups and aryl groups having 6 to 20 ring atoms.

[0064] In some embodiments, 0 < m1 + m2 + m3 + m4 + m5 + m6 < 24.

[0065] In some embodiments, m2 and m5 are each independently selected from any integer from 0 to 3, and m2 + m5 > 0.

[0066] In some embodiments, R8, R 19 Each is independently selected from -CH3, -NH2, and -COOH, but not simultaneously selected from -CH3.

[0067] In some embodiments, R9, R 10 R 11 R 12 R 13 R 14 R 15 R 16 R 17 R 18 R 19 Each group is independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C. 15 Alkyl, substituted or unsubstituted C1-C 15 One or more of the alkoxy groups.

[0068] In some embodiments, R 20 Selected from H, D, substituted or unsubstituted C1-C 15 One or more of the alkyl groups.

[0069] In some embodiments, the compound having unsaturated bonds may include, but is not limited to, C8-C9. 30 Unsaturated fatty acids and C2-C 20 One or more of enamines.

[0070] In some embodiments, C5 to C 30 Unsaturated fatty acids include one or more of the following: octenic acid, decenoic acid, dodecenoic acid, tetradecenoic acid, hexadecenoic acid, oleic acid, and 2-octynoic acid.

[0071] In some embodiments, C2 to C 20Enamines include one or more of ethyleneamine, acrylamine, 4-penten-1-amine, 1-amino-10-undecene, and oleylamine.

[0072] In some embodiments, the solvent includes one or more of C1-C8 alcohol solvents, diethyl ether, and chloroform, wherein the C1-C8 alcohol solvent includes one or more of methanol, ethanol, propanol, butanol, pentanol, hexanol, heptanol, and octanol.

[0073] In some embodiments, the concentration of the compound with unsaturated bonds in the mixed solution can be from 20 mg / mL to 60 mg / mL; for example, it can be 20 mg / mL, 30 mg / mL, 40 mg / mL, 50 mg / mL, 60 mg / mL, or any range between two of the above values. Within this concentration range, the dissolution and dispersion of the compound with unsaturated bonds are beneficial.

[0074] It should be noted that the mixed solution can be prepared by dispersing the compound with unsaturated bonds in the solvent.

[0075] It should be noted that when the device preform is placed in the mixed solution, the compound with unsaturated bonds covers the side of the preformed hole functional layer 20 facing away from the anode 10. On this side, the compound with unsaturated bonds can be adsorbed onto the surface of the preformed hole functional layer 20 through van der Waals interactions, facilitating cross-linking during heat treatment and / or UV treatment. Since the device preform is placed in the mixed solution, the periphery of the device preform (the direction perpendicular to the stacking direction of the anode 10 and the preformed hole functional layer 20) will also be coated with compounds with unsaturated bonds. These compounds may also form a thin layer after heat treatment and / or UV treatment, but since it is on the periphery of the optoelectronic device 100, it will not adversely affect the performance of the optoelectronic device 100.

[0076] By controlling the conditions of heat treatment / ultraviolet treatment, the interface layer 30 can be made thinner, which can prevent the pre-activated hole functional layer 20 from affecting the carrier transport of the device.

[0077] In some embodiments, the temperature of the heating treatment is 110℃ to 145℃, for example, it can be 110℃, 115℃, 120℃, 125℃, 130℃, 135℃, 140℃, 145℃ or any range between two of the above values; the heating treatment time is 10min to 25min, for example, it can be 10min, 12min, 15min, 18min, 20min, 22min, 25min or any range between two of the above values.

[0078] In some embodiments, the ultraviolet treatment includes irradiation with an ultraviolet lamp. The light intensity of the ultraviolet treatment is 3 mW / cm². 2 ~10mW / cm 2 For example, it can be 3mW / cm 2 4mW / cm 2 5mW / cm 2 6mW / cm 2 7mW / cm 2 8mW / cm 2 9mW / cm 2 10mW / cm 2 Or the range between any two of the above values; the ultraviolet treatment time is 10 min to 25 min, for example, it can be 10 min, 12 min, 15 min, 18 min, 20 min, 22 min, 25 min or the range between any two of the above values.

[0079] Thus, under the conditions of the above-mentioned heat treatment and / or ultraviolet treatment, it helps to induce the material of part of the pre-fabricated hole functional layer 20 (P-type semiconductor material with fluorene groups) to enter an unstable state, promoting its cross-linking reaction with compounds with unsaturated bonds to form cross-linked products.

[0080] It should be noted that the heating and ultraviolet treatments overlap at least partially in time. In other words, heating and ultraviolet treatments can be performed simultaneously. When heating and ultraviolet treatments are performed simultaneously, the thermal energy and ultraviolet light energy work synergistically to crosslink the p-type semiconductor material with fluorene groups and the compound with unsaturated bonds, thereby significantly improving the crosslinking effect, shortening the reaction time, and increasing efficiency.

[0081] In some embodiments, after heat treatment and / or ultraviolet treatment, at least a portion of the p-type semiconductor material is activated and crosslinks with at least a portion of the compound having unsaturated bonds to form a crosslinked product. The formed crosslinked product may have the structure shown in formula (1-1) or formula (1-2):

[0082] (1-1):

[0083] (1-2):

[0084] Where X is CR4R5 or

[0085] Z1 and Z2 are each independently selected from C, S, O or N, and at least one of Z1 and Z2 is C.

[0086] n is selected from any integer from 1 to 50, for example, it can be 1 to 10, 1 to 20, 1 to 30, 1 to 40, 1 to 50, 2 to 15, 5 to 20, 10 to 30, 20 to 40, 30 to 50, or any range between any two of the above numerical ranges.

[0087] R 21 and R 22 One of them is selected from -SH, -NH2, -NO2, -CN, -COOH, or -COOR. 20 R 21 and R 22 Another one, R 21 ' and R 22 Each group is independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C. 30 Alkyl, substituted or unsubstituted C1-C 30 One or more of the following: alkoxy group, aryl group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryl group with 5 to 60 substituted or unsubstituted ring atoms, aryloxy group with 6 to 60 substituted or unsubstituted ring atoms, and heteroaryloxy group with 6 to 60 substituted or unsubstituted ring atoms. Further, in some embodiments, R... 21 and R 22 The other one can be selected from H, D, substituted or unsubstituted C1-C1. 30 One of the alkyl groups.

[0088] Among them, R1 to R7, R 20 The options are as described above and will not be repeated here.

[0089] In the above text, when any group is substituted by a substituent, each substituent is independently selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, C1-C1. 10 Alkyl, C1-C 10 One or more combinations of alkoxy groups and aryl groups having 6 to 20 ring atoms.

[0090] In some embodiments, after the heat treatment and / or ultraviolet treatment, a hole functional layer 21 and an interface layer 30 are formed on the anode 10, wherein the material of the hole functional layer 21 includes the p-type semiconductor material having fluorene groups.

[0091] In some embodiments, the thickness of the interface layer 30 is 0.2nm to 1nm, for example, it can be 0.2nm, 0.3nm, 0.4nm, 0.5nm, 0.6nm, 0.7nm, 0.8nm, 0.9nm or any range between two of the above values.

[0092] In some embodiments, to further improve the interface effect and enhance the performance of the optoelectronic device 100, after forming the interface layer 30 and before setting the light-emitting layer 40 and the cathode 50, the process may further include: cleaning the side of the interface layer 30 away from the hole functional layer 21 with a C1-C8 alcohol solvent, wherein the C1-C8 alcohol solvent includes one or more of methanol, ethanol, propanol, butanol, pentanol, hexanol, heptanol, and octanol. Cleaning can remove residual uncrosslinked compounds with unsaturated bonds.

[0093] It should be noted that when the device preform is placed in the mixed solution, it is placed in a container containing the mixed solution. After the interface layer 30 is formed, it needs to be removed from the container before the light-emitting layer 40 and the cathode 50 are set.

[0094] In some embodiments, the anode 10 and the cathode 50 are each independently selected from a metal electrode, a carbon electrode, a doped or undoped metal oxide electrode, and a composite electrode; wherein, the material of the metal electrode is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Ni, Ir, and Mg; the material of the carbon electrode is selected from one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the material of the doped or undoped metal oxide electrode is selected from ITO, FTO, ATO, AZO, GZO, IZO, MZO, and I The composite electrode material is selected from one or more of the following: TZO, ICO, AMO, SnO2, In2O3, Cd:ZnO, F:SnO2, In:SnO2, and Ga:SnO2. The composite electrode material is selected from one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS. Here, " / " indicates a stacked structure; for example, the composite electrode AZO / Ag / AZO represents a three-layer stacked composite structure consisting of an AZO layer, an Ag layer, and an AZO layer. The thickness of the anode 10 can be 10–120 nm; for example, it can be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, or any range between two of the above values. The thickness of the cathode 50 can be 10–120 nm; for example, it can be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, or any range between two of the above values.

[0095] In some embodiments, the material of the light-emitting layer 40 includes a light-emitting material, which may include an organic light-emitting material or a quantum dot material.

[0096] The organic light-emitting material may be selected from, but is not limited to, one or more of the following: CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)]), TCTX:Ir(mmpy)(4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium(III)]), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing BN covalent bonds, HLCT (hybrid local charge transfer excited state) materials, and Exciplex (excitoplex) light-emitting materials.

[0097] The quantum dot material may be selected from, but is not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite quantum dots.

[0098] The materials for the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell material of the core-shell quantum dots can be selected from, but are not limited to, one or more compounds from group II-VI, group IV-VI, group III-V, and group I-III-VI. The shell of the core-shell quantum dots may consist of one or more layers. The group II-VI compounds may be selected from, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may be selected from, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group III-V compounds may be selected from, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group I-III-VI compounds may be selected from, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2. It should be noted that for the aforementioned materials consisting of single-structure quantum dots, or core-shell structure quantum dots, or shell-structure quantum dots, the provided chemical formulas only indicate the elemental composition, not the content of each element. For example, CdZnSe only indicates that it is composed of three elements: Cd, Zn, and Se. If the content of each element were specified, it would correspond to Cd... x Zn1-x Se, 0 <x<1。

[0099] As an example, the core-shell structured quantum dots can be selected from, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. In the above descriptions of CdSe / ZnS, etc., the " / " indicates that the material after the " / " (as the shell) covers the material before the " / " (as the core).

[0100] The materials used for the perovskite quantum dots can be selected from, but are not limited to, doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX"3, where A is Cs. + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2 + Yb 2+ Eu 2+ One or more of the following, where "X" is a halide anion selected from Cl... - ,Br - I - One or more of the following. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX"3, where B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2 + Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu2+ One or more of the following, where "X" is a halide anion selected from Cl... - ,Br - I - One or more of them.

[0101] In some embodiments, the thickness of the light-emitting layer 40 can be 20nm to 60nm; for example, it can be 20nm, 25nm, 30nm, 40nm, 45nm, 50nm, 52nm, 54nm, 55nm, 56nm, 58nm, 60nm or any range between two of the above values.

[0102] In some embodiments, the surface of the quantum dot material is attached with ligands, the raw materials of which may include one or more of organic carboxylic acids, organic amines, thiols, and organic (oxy)phosphines. Specifically, the organic carboxylic acids include one or more of decacarboxylic acid, undecenoic acid, tetradecanoic acid, oleic acid, and stearic acid; the organic amines include one or more of oleylamine and octadecylamine; the organic (oxy)phosphines include one or more of trioctylphosphine and trioctylphosphine oxide; and the thiols include one or more of n-octylthiol, dodecanethiol, and octadecylthiol.

[0103] In some embodiments, the provision of the light-emitting layer 40 and the cathode 50 on the interface layer 30 further includes: providing an electronic functional layer 60 on the light-emitting layer 40, and providing the cathode 50 on the electronic functional layer 60.

[0104] The electronic functional layer 60 includes one or more of an electron injection layer and an electron transport layer. The electron injection layer is disposed between the light-emitting layer 40 and the electron transport layer, and the electron transport layer is disposed between the electron injection layer and the cathode 50.

[0105] In some embodiments, the material of the electronic functional layer 60 includes one or more of the following: second doped metal oxide particles, second undoped metal oxide particles, group IIB-VIA semiconductor materials, group IIIA-VA semiconductor materials, and group IB-IIIA-VIA semiconductor materials. The material of the second undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and HfO3. The metal oxide in the second doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, HfO3, and Al2O3. The doping element in the second doped metal oxide particles includes Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The semiconductor materials are one or more of ZnS, ZnSe, and CdS, the semiconductor materials are one or more of InP and GaP, and the semiconductor materials are one or more of CuInS and CuGaS. The doping amount of the dopant element in the second doped metal oxide particle is 0.1wt% to 20wt%, for example, it can be 1wt%, 2wt%, 3wt%, 4wt%, 5wt%, 6wt%, 7wt%, 8wt%, 9wt%, 10wt%, 11wt%, 12wt%, 13wt%, 14wt%, 15wt%, 16wt%, 17wt%, 18wt%, 19wt%, or any range between two values.

[0106] In some embodiments, the thickness of the electronic functional layer 60 is 20 to 60 nm; for example, it can be 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm or any range between two of the above values.

[0107] It is understood that the optoelectronic device 100 may also be provided with some functional layers that are conventionally used in optoelectronic devices 100 and help to improve the performance of optoelectronic devices 100, such as electron blocking layer, hole blocking layer, interface modification layer, etc.

[0108] It is understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the actual needs of the optoelectronic device 100.

[0109] The methods for forming the films such as the anode 10, cathode 50, and light-emitting layer 40 can be chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition or solution processing. Physical deposition methods include thermal evaporation deposition (CVD), electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition (PVD), atomic layer deposition, and pulsed laser deposition. Solution processing methods include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating. Those skilled in the art can prepare the various films of the optoelectronic device 100 of this application embodiment according to the known methods for preparing optoelectronic devices 100, which will not be elaborated further here.

[0110] Secondly, please refer to Figure 3 This application also provides an optoelectronic device 100, which includes a stacked anode 10, a hole-functional layer 21, an interface layer 30, a light-emitting layer 40, and a cathode 50. The hole-functional layer 21 is made of a P-type semiconductor material with fluorene groups, and the interface layer 30 is made of a cross-linked product of a P-type semiconductor material with fluorene groups and a compound with unsaturated bonds.

[0111] The optoelectronic device 100 can be prepared by the preparation method described above.

[0112] In the optoelectronic device 100 proposed in this application, the material of the interface layer 30 includes a cross-linked product of a P-type semiconductor material with fluorene groups and a compound with unsaturated bonds, which improves the stability of the hole functional layer 21. As a result, when the device is powered on, the material of the hole functional layer 21 is less likely to react with the adjacent film layer, thereby affecting the light-emitting performance and lifespan of the optoelectronic device 100.

[0113] In some embodiments, the compound having unsaturated bonds includes C5-C6 bonds. 30 Unsaturated fatty acids and C2-C 18 One or more of the enamines, wherein the C5-C 30 Unsaturated fatty acids include one or more of octenic acid, decenoic acid, dodecenoic acid, tetradecenoic acid, hexadecenoic acid, oleic acid, and 2-octynoic acid, wherein C2-C 18 Enamines include one or more of ethyleneamine, acrylamine, 4-penten-1-amine, 1-amino-10-undecene, and oleylamine.

[0114] In some embodiments, the p-type semiconductor material having a fluorene group comprises an organic compound having a fluorene group or an inorganic compound with a fluorene group attached to its surface; wherein, the organic compound having a fluorene group includes poly[(9,9-di-n-octylfluorene-2,7-diyl)-alt-(4,4'-(N-(4-n-butyl)phenyl)-diphenylamine)], poly((9,9-di-octylfluorene-2,7-diyl)-alt-(9-(2-ethylhexyl)) The inorganic compounds include one or more of the following: 2,5-di(9-hydroxyfluorene)-thiophene, 2,5-di(9-hydroxyfluorene)-[2,2']bidithiophene, 2,5-di(9-enylfluorene)-3,4-cyclothiopentene, 2,5-di(9-fluorene)-thiophene, 9-9'-difluorene, and 9-6-difluorene;

[0115] In some embodiments, the thickness of the interface layer 30 is 0.2nm to 1nm, for example, it can be 0.2nm, 0.3nm, 0.4nm, 0.5nm, 0.6nm, 0.7nm, 0.8nm, 0.9nm or any range between two of the above values.

[0116] In some embodiments, the optoelectronic device 100 may further include an electronic functional layer 60, which is located between the interface layer 30 and the cathode 50. The material and thickness of the electronic functional layer 60 are as described above and will not be repeated here.

[0117] This application embodiment also provides a display device, which includes the above-described optoelectronic device 100, or the optoelectronic device 100 prepared by the above-described preparation method.

[0118] The display device can be any electronic product with a display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0119] The present application will be specifically described below through specific embodiments. These embodiments are only some embodiments of the present application and are not intended to limit the present application. Unless otherwise specified, the raw materials used in the following embodiments are all commercially available products.

[0120] Example 1

[0121] This embodiment provides a quantum dot light-emitting diode, and the fabrication method is as follows:

[0122] Step S1: First, ultrasonically clean the substrate coated with ITO with acetone and ethanol for 15 minutes, then clean it with deionized water and blow it dry. Next, dry it on a heating plate at 150°C for 10 minutes, and then irradiate it with ultraviolet light (UV) for 20 minutes to increase the work function of ITO and form an anode.

[0123] Step S2: Spin-coating PEDOT:PSS (mass fraction 2.8%) onto the anode at 3000 rpm for 30 s, followed by heating on a 150°C heating plate for 20 min to form a hole injection layer with a thickness of 20 nm.

[0124] Step S3: Place the semi-finished product obtained in step S2 into an inert atmosphere, spin-coat the hole injection layer with a chlorobenzene solution of TFB (TFB concentration of 8 mg / mL) at 3000 rpm for 30 s, and then heat it on a 150℃ heating plate for 20 min to form a prefabricated hole transport layer with a thickness of 25 nm.

[0125] Step S4: Place the semi-finished product obtained in step S3 into a three-necked flask containing an ethanol solution of oleic acid (oleic acid concentration of 30 mg / mL), heat to 130°C for heat treatment, and simultaneously apply light with an intensity of 5 mW / cm². 2 The heat treatment and ultraviolet treatment were performed under ultraviolet light for 15 minutes. After the reaction was completed, the temperature was lowered to room temperature. Part of the pre-prepared hole transport layer TFB reacted with oleic acid to generate cross-linking products and form an interface layer. The unreacted part of the pre-prepared hole transport layer was the hole transport layer.

[0126] Step S5: Spin-coat anhydrous ethanol onto the interface layer at 1500 rpm for 30 seconds to remove excess oleic acid from the interface layer.

[0127] Step S6: Spin-coat a hexane solution of blue quantum dots (CdZnSe / ZnSe / CdZnS / ZnS) (quantum dot concentration of 30 mg / mL) onto the interface layer at a speed of 2000 rpm for 30 s, and then heat it on an 80°C heating plate for 5 min to form a light-emitting layer with a thickness of 30 nm.

[0128] Step S7: Spin-coat an ethanol solution of ZnO (ZnO concentration of 25 mg / mL) onto the luminescent layer at a speed of 4000 rpm for 30 s, and heat at 80 °C for 5 min to obtain an electron transport layer with a thickness of 35 nm.

[0129] Step S8: The device obtained in S7 is subjected to thermal evaporation, with a vacuum level not exceeding 3 × 10⁻⁶. -4Pa was used to vapor-deposit Al at a rate of 1 angstrom / second for 1000 s to obtain a pretreated cathode with a thickness of 100 nm. Then, it was encapsulated with epoxy resin to form an encapsulation layer, thus obtaining a quantum dot light-emitting diode.

[0130] Example 2

[0131] The scheme in this embodiment is basically the same as that in embodiment 1, except that the material of the prefabricated hole transport layer is replaced with 2,5-bis(9-hydroxyfluorene)-[2,2']bidithiophene (BHFBT).

[0132] Example 3

[0133] The scheme of this embodiment is basically the same as that of embodiment 1, except that in this embodiment, the semi-finished product obtained in step S3 is placed in an ethanol solution containing octenic acid (octenic acid concentration is 30 mg / mL), and the material of the interface layer includes the cross-linking product of octenic acid and TFB.

[0134] Example 4

[0135] The scheme of this embodiment is basically the same as that of embodiment 1, except that in this embodiment, the semi-finished product obtained in step S3 is placed in an ethanol solution containing hexadecenoic acid (the concentration of hexadecenoic acid is 30 mg / mL), and the material of the interface layer includes the cross-linking product of hexadecenoic acid and TFB.

[0136] Example 5

[0137] The scheme of this embodiment is basically the same as that of embodiment 1, except that in this embodiment, the semi-finished product obtained in step S3 is placed in an ethanol solution containing 2-octynoic acid (2-octynoic acid concentration is 30mg / mL), and the material of the interface layer includes the cross-linking product of 2-octynoic acid and TFB.

[0138] Example 6

[0139] The scheme of this embodiment is basically the same as that of embodiment 1, except that in this embodiment, the semi-finished product obtained in step S3 is placed in an ethanol solution containing oleylamine (oleylamine concentration is 30mg / mL), and the material of the interface layer includes the cross-linking product of oleylamine and TFB.

[0140] Example 7

[0141] The scheme of this embodiment is basically the same as that of embodiment 1, except that in this embodiment, the semi-finished product obtained in step S3 is placed in an ethanol solution containing 4-penten-1-amine (ethyleneamine concentration is 30 mg / mL), and the material of the interface layer includes the cross-linking product of ethyleneamine and TFB.

[0142] Example 8

[0143] The scheme of this embodiment is basically the same as that of embodiment 1, except that in this embodiment, the semi-finished product obtained in step S3 is placed in an ethanol solution containing 1-amino-10-undecene (1-amino-10-undecene concentration is 30mg / mL), and the material of the interface layer includes the cross-linking product of 1-amino-10-undecene and TFB.

[0144] Example 9

[0145] The scheme in this embodiment is basically the same as that in embodiment 1, except that the heating and ultraviolet treatment time in step S4 is 10 minutes.

[0146] Example 10

[0147] The scheme in this embodiment is basically the same as that in embodiment 1, except that the heating and ultraviolet treatment time in step S4 is 25 minutes.

[0148] Example 11

[0149] The scheme in this embodiment is basically the same as that in embodiment 1, the only difference is that in this embodiment, only heating treatment is performed in step S4, and ultraviolet treatment is not performed.

[0150] Example 12

[0151] The scheme in this embodiment is basically the same as that in embodiment 11, except that in this embodiment, the temperature of the heating treatment in step S4 is 110°C.

[0152] Example 13

[0153] The scheme in this embodiment is basically the same as that in embodiment 11, except that in this embodiment, the temperature of the heating treatment in step S4 is 145°C.

[0154] Example 14

[0155] The scheme in this embodiment is basically the same as that in embodiment 1, the only difference is that in this embodiment, only ultraviolet treatment is performed in step S4, and no heating treatment is performed.

[0156] Example 15

[0157] The scheme in this embodiment is basically the same as that in embodiment 14, except that in this embodiment, the light intensity of the ultraviolet treatment in step S4 is 3mW / cm². 2 .

[0158] Example 16

[0159] The scheme in this embodiment is basically the same as that in embodiment 14, except that in this embodiment, the light intensity of the ultraviolet treatment in step S4 is 10mW / cm². 2 .

[0160] Comparative Example 1

[0161] The comparative example scheme is basically the same as that of Example 1, except that steps S4 to S5 are omitted in this comparative example, the pre-fabricated hole transport layer is a hole transport layer, and the light-emitting layer is directly prepared on the hole transport layer.

[0162] Comparative Example 2

[0163] The comparative example scheme is basically the same as that of Example 2, except that steps S4 to S5 are omitted in this comparative example, the pre-fabricated hole transport layer is a hole transport layer, and the light-emitting layer is directly prepared on the hole transport layer.

[0164] The QLED devices prepared in the above embodiments and comparative examples were subjected to performance tests, and the test results are recorded in Table 1. The test methods are as follows:

[0165] Brightness and Lifespan: The test environment was 25℃, 60% RH, with a constant 2mA current driving the QLED device. A silicon photonics system was used to test the brightness change of the QLED device. The time required for the brightness to decay from 100% to 95% of its maximum value after power-on was recorded as T95, which is the measured lifespan. To shorten the testing cycle, device lifespan testing is usually performed by accelerating device aging under high brightness, referencing OLED device testing. The lifespan at high brightness is then obtained by fitting an extended exponential decay brightness decay fitting formula, for example, the lifespan at 1000 nits is recorded as T95. 1000nit The specific calculation formula is as follows:

[0166]

[0167] In the formula, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, L L The value is 1000 nits, and A is the acceleration factor. For QLED, this value is usually 1.6 to 2. In this experiment, the lifetime of several groups of QLED devices under rated brightness was measured, and the value of A was found to be 1.7.

[0168] Table 1

[0169]

[0170]

[0171] As can be seen from the table above:

[0172] As can be seen from Examples 1 to 8 and Comparative Examples 1 to 2, the quantum dot light-emitting diodes prepared by the preparation method provided in this scheme, by introducing compounds with unsaturated bonds, undergo cross-linking reactions with the P-type semiconductor material with fluorene groups in the pre-fabricated hole functional layer, which activates the pre-fabricated hole functional layer, avoids the reaction between the P-type semiconductor material with fluorene groups and the quantum dots in the light-emitting layer, thus improving the light-emitting performance and increasing the brightness of the quantum dot light-emitting diode. Furthermore, by improving the stability of the hole functional layer, the lifespan of the quantum dot light-emitting diode is extended. The various compounds with unsaturated bonds and various P-type semiconductor materials with fluorene groups provided in this scheme can all form an interface layer through cross-linking reactions, thereby improving the performance of the quantum dot light-emitting diode.

[0173] As can be seen from Examples 1, 9-16 and Comparative Example 1, the conditions of heat treatment and ultraviolet treatment have a certain influence on the formation of the interface layer. Among them, the effect is relatively better when heat treatment and ultraviolet treatment are used simultaneously. This can effectively promote the cross-linking of P-type semiconductor materials with fluorene groups and compounds with unsaturated bonds, realize the pre-activation and performance optimization of the pre-fabricated hole functional layer, thereby improving the luminous brightness of quantum dot light-emitting diodes and extending the service life of quantum dot light-emitting diodes.

[0174] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A method for fabricating an optoelectronic device, characterized in that, Includes the following steps: A device preform is provided, the device preform comprising a stacked anode and a preformed hole functional layer, wherein the material of the preformed hole functional layer comprises a P-type semiconductor material having fluorene groups; A mixed solution is provided, the mixed solution comprising a compound having unsaturated bonds and a solvent. The device preform is placed in the mixed solution and subjected to heat treatment and / or ultraviolet treatment. The portion of the preformed hole functional layer away from the anode reacts with the compound having unsaturated bonds to form an interface layer. The portion of the preformed hole functional layer between the anode and the interface layer is a hole functional layer. A light-emitting layer and a cathode are disposed on the interface layer to obtain a photoelectric device; The hole functional layer is made of the p-type semiconductor material with fluorene groups, and the interface layer is made of the p-type semiconductor material with fluorene groups and the cross-linked product of the compound with unsaturated bonds.

2. The preparation method according to claim 1, characterized in that, The structural formula of the p-type semiconductor material with fluorene groups is shown below: Where X is CR4R5 or n is selected from any integer from 1 to 50; R1 is selected from single bond, substituted or unsubstituted C1 to C1. 30 One or more combinations of alkylene, substituted or unsubstituted aryl group having 6 to 60 ring atoms, substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms, secondary amino group, -O-, -S-, and carbonyl group; R2, R3, R4, R5, R6, and R7 are each independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, and substituted or unsubstituted C1-C6 groups. 30 Alkyl, substituted or unsubstituted C1-C 30 One or more of the following: alkoxy group, aryl group with 6 to 60 substituted or unsubstituted ring atoms, heteroaryl group with 5 to 60 substituted or unsubstituted ring atoms, aryloxy group with 6 to 60 substituted or unsubstituted ring atoms, and heteroaryloxy group with 5 to 60 substituted or unsubstituted ring atoms; R4 and R5 are cyclic or acyclic, and R6 and R7 are cyclic or acyclic; and / or The structural formula of the compound with unsaturated bonds is shown below: R8-(CR9R) 10 ) m1 -(CR 11 =CR 12 ) m2 -(CR 13 R 14 ) m3 -(OCH2) m4 -(CR 15 =CR 16 ) m5 -(CR 17 R 18 ) m6 -R 19 ; Where m1, m2, m3, m4, m5, and m6 are each independently selected from any integer from 0 to 10, and m2+m5>0, 0<m1+m2+m3+m4+m5+m6<30; R8, R 19 Each is independently selected from -CH3, -SH, -NH2, -NO2, -CN, -COOH, -COOR 20 However, it is not simultaneously selected from -CH3; R9, R 10 R 11 R 12 R 13 R 14 R 15 R 16 R 17 R 18 R 19 Each group is independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C. 30 Alkyl, substituted or unsubstituted C1-C 30 One or more of the following: alkoxy, aryl with 6 to 60 substituted or unsubstituted ring atoms, heteroaryl with 5 to 60 substituted or unsubstituted ring atoms, aryloxy with 6 to 60 substituted or unsubstituted ring atoms, and heteroaryloxy with 5 to 60 substituted or unsubstituted ring atoms; R 20 Selected from H, D, substituted or unsubstituted C1-C 30 One or more of alkyl, aryl with 6 to 60 substituted or unsubstituted cyclic atoms, and heteroaryl with 5 to 60 substituted or unsubstituted cyclic atoms; When substituted, each substituent is independently selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, C1-C1. 10 Alkyl, C1-C 10 One or more combinations of alkoxy groups and aryl groups having 6 to 20 ring atoms.

3. The preparation method according to claim 2, characterized in that, R1 is selected from single bond, substituted or unsubstituted C1 to C1. 30 One or more combinations of alkylene, substituted or unsubstituted aryl group having 6 to 30 ring atoms, substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, secondary amino group, -O-, -S-, carbonyl group; and / or R2, R3, R4, R5, R6, and R7 are each independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, and substituted or unsubstituted C1-C6 groups. 15 Alkyl, substituted or unsubstituted C1-C 15 One or more of the following: alkoxy group, aryl group with 6 to 30 substituted or unsubstituted ring atoms, heteroaryl group with 5 to 30 substituted or unsubstituted ring atoms, aryloxy group with 6 to 30 substituted or unsubstituted ring atoms, and heteroaryloxy group with 5 to 30 substituted or unsubstituted ring atoms; and / or 0 < m1 + m2 + m3 + m4 + m5 + m6 < 24; and / or m2 and m5 are each independently selected from any integer from 0 to 3, and m2 + m5 > 0; and / or R8, R 19 Each is independently selected from -CH3, -NH2, and -COOH, but not simultaneously from -CH3; and / or R9, R 10 R 11 R 12 R 13 R 14 R 15 R 16 R 17 R 18 R 19 Each group is independently selected from H, D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, substituted or unsubstituted C1-C. 15 Alkyl, substituted or unsubstituted C1-C 15 One or more of the alkoxy groups; and / or R 20 Selected from H, D, substituted or unsubstituted C1-C 15 One or more of the alkyl groups.

4. The preparation method according to any one of claims 1 to 3, characterized in that, The p-type semiconductor material with fluorene groups includes one or more of the following: poly[(9,9-di-n-octylfluorene-2,7-diyl)-alt-(4,4'-(N-(4-n-butyl)phenyl)-diphenylamine)], poly((9,9-dioctylfluorene-2,7-diyl)-alt-(9-(2-ethylhexyl)-carbazole-3,6-diyl)), 2,5-bis(9-hydroxyfluorene)-thiophene, 2,5-bis(9-hydroxyfluorene)-[2,2']bidithiophene, 2,5-bis(9-enylfluorene)-3,4-cyclothiopentene, 2,5-bis(9-fluorene)-thiophene, 9-9'-difluorene, and 9-6-difluorene; and / or The compounds having unsaturated bonds include one or more of octenic acid, decenoic acid, dodecenoic acid, tetradecenoic acid, hexadecenoic acid, oleic acid, 2-octynoic acid, ethyleneamine, acrylamine, 4-penten-1-amine, 1-amino-10-undecene, and oleylamine.

5. The preparation method according to claim 1, characterized in that, The solvent includes one or more of C1-C8 alcohols, diethyl ether, and chloroform; the C1-C8 alcohols include one or more of methanol, ethanol, propanol, butanol, pentanol, hexanol, heptanol, and octanol; and / or The thickness of the prefabricated hole functional layer is 20nm to 60nm; and / or The thickness of the interface layer is 0.2 nm to 1 nm; and / or In the mixed solution, the concentration of the compound having unsaturated bonds is 20 mg / mL to 60 mg / mL.

6. The preparation method according to claim 1, characterized in that, The temperature of the heat treatment is 110℃~145℃; the time of the heat treatment is 10min~25min; and / or The ultraviolet treatment includes irradiation with an ultraviolet lamp; the light intensity of the ultraviolet treatment is 3 mW / cm². 2 ~10mW / cm 2 The UV treatment time is 10 min to 25 min; and / or When the heat treatment and the ultraviolet treatment are performed, the heat treatment and the ultraviolet treatment overlap for at least part of the time period.

7. The preparation method according to claim 1, characterized in that, After the interface layer is formed and before the light-emitting layer and cathode are set, the method further includes: The side of the interface layer away from the hole functional layer is cleaned with a C1-C8 alcohol solvent, wherein the C1-C8 alcohol solvent includes one or more of methanol, ethanol, propanol, butanol, pentanol, hexanol, heptanol, and octanol.

8. The preparation method according to claim 1, characterized in that, The anode and the cathode are each independently selected from metal electrodes, carbon electrodes, doped or undoped metal oxide electrodes, and composite electrodes; wherein, the material of the metal electrode is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Ni, Ir, and Mg; the material of the carbon electrode is selected from one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the material of the doped or undoped metal oxide electrode is selected from ITO, FTO, ATO, AZO, GZO, IZO, MZO, ITZO, ICO, etc. AMO, SnO2, In2O3, Cd:ZnO, F:SnO2, In:SnO2, Ga:SnO2; the composite electrode material is selected from one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS; and / or The material of the light-emitting layer includes organic light-emitting materials or quantum dot materials; the organic light-emitting materials are selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)], 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium], diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, and TADF. The quantum dot material is selected from one or more of the following: a polymer containing BN covalent bonds, an HLCT material, and an Exciplex luminescent material; the quantum dot material is selected from one or more of the following: single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots; the material of the single-structure quantum dot, the core material of the core-shell quantum dot, and the shell material of the core-shell quantum dot are respectively selected from one or more of the following: group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds; the shell of the core-shell quantum dot includes one or more layers; The II-VI compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, C The compounds are selected from one or more of dZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe.The III-V compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds are selected from one or more of CuInS2, CuInSe2, and AgInS2; the core-shell quantum dots are selected from one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS; the perovskite quantum dots are made of doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX"3, where A is Cs; + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of the following, where "X" is a halide anion selected from Cl... - ,Br - I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX"3, where B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2 + Yb 2+ Eu 2+ One or more of the following, where "X" is a halide anion selected from Cl... - ,Br - I - One or more of the following: Optionally, the surface of the quantum dot material is connected to a ligand, the raw material of which includes one or more of organic carboxylic acids, organic amines, thiols, and organic (oxy)phosphines; the organic carboxylic acids include one or more of decacarboxylic acid, undecenoic acid, tetradecanoic acid, oleic acid, and stearic acid; the organic amines include one or more of oleylamine and octadecylamine; the organic (oxy)phosphines include one or more of trioctylphosphine and trioctylphosphine oxide; and the thiols include one or more of n-octylthiol, dodecanethiol, and octadecethiol.

9. The preparation method according to claim 1, characterized in that, The provision of a light-emitting layer and a cathode on the interface layer further includes: providing an electronic functional layer on the light-emitting layer, and providing the cathode on the electronic functional layer; The material of the electronic functional layer includes one or more of the following: second doped metal oxide particles, second undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the second undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and HfO3. The metal oxide in the second doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, HfO3, and Al2O3. The doping element in the second doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor material includes one or more of InP and GaP; and the IB-IIIA-VIA group semiconductor material includes one or more of CuInS and CuGaS. The doping amount of the doping element in the second doped metal oxide particle is 0.1 wt% to 20 wt%.

10. An optoelectronic device, characterized in that, It is prepared by the preparation method according to any one of claims 1 to 9.

11. The optoelectronic device according to claim 10, characterized in that, The optoelectronic device includes a stacked anode, a hole-functional layer, an interface layer, a light-emitting layer, and a cathode. The hole-functional layer is made of a P-type semiconductor material with fluorene groups, and the interface layer is made of a cross-linked product of a P-type semiconductor material with fluorene groups and a compound with unsaturated bonds.

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