Flexible perovskite matrix integrated processing method of dot matrix cold pressing process
Patent Information
- Application Number
- CN202611010751.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-07-08
- Publication Date
- 2026-10-27
Smart Images
Figure CN122995501A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of perovskite applications, and specifically to a flexible perovskite matrix integration processing method using a lattice-type cold pressing process. Background Technology
[0002] Perovskite materials possess high light absorption coefficients, carrier mobility, and tunable band gaps, leading to their application in photovoltaic cells, photodetectors, and light-emitting diodes. With the development of flexible displays, large-area photovoltaic modules, wearable electronic devices, and flexible radiation detection equipment, perovskite devices increasingly need to meet the requirements of large-area deployment, flexible bending, and array integration.
[0003] In existing perovskite devices, traditional conductive materials such as copper, silver, and aluminum are prone to ion diffusion and interfacial reactions upon contact with perovskite materials, affecting the structural stability and charge transport performance of the perovskite layer. Therefore, current technologies typically use relatively stable conductive materials such as carbon-based materials, indium tin oxide, or gold as electrodes for perovskite devices. When forming perovskite devices based on these electrodes, one approach is to form electrodes on the surface of a continuous perovskite thin film, and another is to perform array splicing on rigid substrates such as glass or silicon wafers. In the former, when localized crystal defects, electrode detachment, or functional failure occur in the perovskite thin film, the overall device operation can be easily affected; while the latter, although providing some structural support, is difficult to adapt to flexible application environments such as bending and curling, and is not conducive to the combined integration of perovskite devices of different specifications.
[0004] Furthermore, existing perovskite devices typically employ a simple two-point connection structure for their acquisition circuits, lacking a noise reference branch corresponding to the device's operating circuit. In flexible applications, radiation detection, or complex electromagnetic environments, external electromagnetic signals, flexible circuit board deformation, temperature fluctuations, and air ionization between electrodes can all introduce interference signals, affecting the device's signal stability and measurement accuracy. Summary of the Invention
[0005] To achieve the above and other related objectives, this invention discloses a method for integrating and processing flexible perovskite matrices using a lattice-type cold pressing process, comprising: A top flexible circuit board is fabricated, wherein a plurality of matrix-type bias electrodes, interdigitated reference capacitors, a top ground plane, and a copper exposed area of the top ground plane are arranged in a matrix on the side of the top flexible circuit board facing the perovskite device, wherein each of the matrix-type bias electrodes includes a plurality of raised solder joints. A bottom flexible circuit board is fabricated, and a lower electrical connection structure, a bottom ground plane, and a copper exposed area of the bottom ground plane are provided on the bottom flexible circuit board. A plurality of perovskite devices are provided, each of the perovskite devices comprising an upper electrode layer, a perovskite layer and a lower electrode layer disposed sequentially. Each of the perovskite devices is arranged between the top flexible circuit board and the bottom flexible circuit board. The top flexible circuit board is cold-pressed so that the raised solder joints of the dot matrix bias electrode form multiple discrete conductive contact points with the upper electrode layer of the corresponding perovskite device. According to the bottom electrode structure of the perovskite device, the lower electrode layer forms a lower electrical connection with the lower electrical connection structure. Connect one end of the dot matrix bias electrode and one end of the interdigital reference capacitor to the positive output terminal of the bias power supply, connect the other end of the interdigital reference capacitor to the reference signal acquisition terminal of the analog-to-digital converter, and connect the lower electrical connection structure to the device signal acquisition terminal of the analog-to-digital converter. The top flexible circuit board is attached to the bottom flexible circuit board so that the exposed copper area of the top ground plane and the exposed copper area of the bottom ground plane are in contact and connected.
[0006] Preferably, each of the dot matrix bias electrodes includes nine square pads arranged in a 3×3 array, and each square pad is provided with a raised solder joint; the side length of each square pad is 0.5 mm, and the height of each raised solder joint is 0.3 mm.
[0007] Preferably, when the lower electrode layer has a conductive surface that can be cold-pressed into contact, the lower electrical connection structure includes a bottom connection electrode, and the bottom connection electrode includes a plurality of raised solder joints arranged in a dot matrix. The bottom connecting electrode is aligned with the lower electrode layer and cold-pressed to form multiple discrete conductive contact points between the raised solder joints of the bottom connecting electrode and the lower electrode layer.
[0008] Preferably, when the perovskite device uses a single-sided conductive flexible substrate, the bottom flexible circuit board is provided with a perovskite device mounting area, a conductive layer extension area, and a bottom connection electrode. The conductive layer of the single-sided conductive flexible substrate is electrically connected to the lower electrode layer and extends beyond the edge of the perovskite layer to form a conductive layer extension. The single-sided conductive perovskite device is fixed in the perovskite device mounting area, so that the conductive layer extension is located in the conductive layer extension area, and the conductive layer extension is connected to the bottom connecting electrode by conductive paste.
[0009] Preferably, the conductive paste is conductive silver paste or flexible conductive carbon paste; a high-temperature resistant adhesive is provided in the non-conductive connection area of the perovskite device mounting area, the high-temperature resistant adhesive avoiding the bottom connection electrode, the conductive layer extension area, and the conductive area between the conductive layer extension and the bottom connection electrode.
[0010] Preferably, the interdigitated reference capacitor is disposed in the non-cold-pressed contact area of the top flexible circuit board, and the capacitance value of the interdigitated reference capacitor is 0.3pF.
[0011] Preferably, an insulating colloid is provided in the non-conductive area around the raised solder joint, and the insulating colloid avoids the conductive contact position between the raised solder joint and the upper electrode layer. The negative output terminal of the bias power supply, the ground terminal of the analog-to-digital converter, the top ground plane, and the bottom ground plane are all connected to the system reference ground.
[0012] In a second aspect, the present invention provides a flexible perovskite matrix integrated structure, including a top flexible circuit board, a bottom flexible circuit board, multiple perovskite devices arranged in a matrix, a bias power supply, and an analog-to-digital converter. The top flexible circuit board has multiple dot matrix bias electrodes, interdigitated reference capacitors, a top ground plane, and a copper exposed area of the top ground plane on the side facing the perovskite device. Each dot matrix bias electrode includes multiple raised solder joints. The bottom flexible circuit board is provided with a lower electrical connection structure, a bottom grounding plane, and a copper exposed area of the bottom grounding plane. Each of the perovskite devices includes an upper electrode layer, a perovskite layer and a lower electrode layer arranged in sequence, wherein the protruding solder joint is cold-pressed into contact with the corresponding upper electrode layer, and the lower electrode layer is electrically connected to the lower electrical connection structure; One end of the dot matrix bias electrode and one end of the interdigital reference capacitor are respectively connected to the positive output terminal of the bias power supply, the other end of the interdigital reference capacitor is connected to the reference signal acquisition terminal of the analog-to-digital converter, and the lower electrical connection structure is connected to the device signal acquisition terminal of the analog-to-digital converter. The exposed copper area of the top ground plane is in contact with the exposed copper area of the bottom ground plane.
[0013] Preferably, the perovskite device is a perovskite device with a conductive bottom electrode, and the lower electrical connection structure includes a bottom connection electrode, which includes a plurality of raised solder joints arranged in a dot matrix. The raised solder joints of the bottom connecting electrode are cold-pressed into contact with the lower electrode layer to form multiple discrete conductive contact points.
[0014] Preferably, the perovskite device is a single-sided conductive perovskite device, and the bottom flexible circuit board is provided with a perovskite device mounting area, a conductive layer extension area and a bottom connection electrode. The single-sided conductive perovskite device includes a single-sided conductive flexible substrate layer disposed below the lower electrode layer. The conductive layer of the single-sided conductive flexible substrate layer extends beyond the edge of the perovskite layer to form a conductive layer extension. The conductive layer extension is located within the conductive layer extension area and is connected to the bottom connecting electrode through a conductive paste.
[0015] By adopting the above technical solution, this invention respectively sets multiple vertical electrode perovskite devices in the corresponding mounting areas of the bottom flexible circuit board, enabling each perovskite device to be integrated as an independent unit. This avoids directly relying on continuous large-area perovskite films or rigid substrates to form an array, which is beneficial for adapting to large-area flexible applications. The top flexible circuit board uses a dot matrix bias electrode composed of multiple raised solder points, and forms multiple discrete conductive contact points with the top electrode of the perovskite device through cold pressing. This ensures reliable connection of the top electrode, improves the adaptability of the connection part to bending deformation, and reduces local contact. The impact of contact abnormalities on the overall electrical connection status was investigated. For perovskite devices formed by different fabrication methods, direct connection with double-sided conductive flexible substrates and extension connection with single-sided conductive layers were adopted to improve the adaptability of the bottom electrode connection structure. Interdigitated reference capacitors were set on the top flexible circuit board, which can provide reference signals related to the positive bias voltage and deformation of the flexible circuit board to the analog-to-digital converter, providing a basis for subsequent noise analysis and processing. At the same time, the grounding planes of the upper and lower flexible circuit boards form a continuous grounding shielding path after being connected through the exposed copper area, which helps to reduce the impact of external electromagnetic interference on the flexible perovskite matrix integration structure. Attached Figure Description
[0016] The above and other features, advantages, and aspects of the embodiments of this disclosure will become more apparent from the accompanying drawings and the following detailed description. The drawings are provided for a better understanding of the invention and are not intended to limit the scope of this disclosure. In the drawings, the same or similar reference numerals denote the same or similar elements, wherein: Figure 1 This is a schematic diagram of the top flexible circuit board according to an embodiment of the present invention; Figure 2 This is a schematic diagram of each dot matrix bias electrode and its north-facing interdigitated reference capacitor in an embodiment of the present invention. Figure 3 This is a schematic diagram of a bottom-conductive perovskite device according to an embodiment of the present invention; Figure 4 This is a schematic diagram of a bottom-conductive perovskite device connected to a bottom flexible circuit board according to an embodiment of the present invention. Figure 5This is a schematic diagram of the bottom flexible circuit board when using a single-sided conductive perovskite device in an embodiment of the present invention; Figure 6 This is a partial enlarged view of the bottom flexible circuit board when using a single-sided conductive perovskite device in an embodiment of the present invention; Figure 7 This is a schematic diagram of a single-sided conductive perovskite device according to an embodiment of the present invention; Figure 8 This is a schematic diagram of the connection of a single-sided conductive perovskite device used in an embodiment of the present invention; Figure 9 This is a circuit connection diagram according to an embodiment of the present invention; Reference numerals: 1. Top flexible circuit board; 2. Dot matrix bias electrode; 3. Raised solder joint; 4. Interdigitated reference capacitor; 5. Exposed copper area of top ground plane; 6. Bottom flexible circuit board; 7. Perovskite device mounting area; 8. Bottom connecting electrode; 9. Conductive layer extension area; 10. Exposed copper area of bottom ground plane; 11. Bottom conductive perovskite device; 12. Upper electrode layer; 13. Perovskite layer; 14. Lower electrode layer; 15. Single-sided conductive perovskite device; 16. Single-sided conductive flexible substrate layer; 17. Conductive layer extension; 18. Insulating colloid; 19. Bias power supply; 20. Analog-to-digital converter. Detailed Implementation
[0017] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0018] like Figures 1 to 9 As shown, this invention provides a method for integrating flexible perovskite matrix using a lattice-type cold pressing process. The flexible perovskite matrix integrated structure formed by this method includes a top flexible circuit board 1, a bottom flexible circuit board 6, multiple perovskite devices, a bias power supply 19, and an analog-to-digital converter 20. The multiple perovskite devices are arranged in a preset row and column configuration, forming upper and lower electrical connections respectively, to constitute a flexible perovskite device matrix.
[0019] In this invention, the bottom connection of the perovskite device includes two methods: the first is a double-sided lattice cold-press connection method when the bottom electrode is conductive; the second is a conductive layer extension connection method when a single-sided conductive flexible substrate 16 is used. The two methods are selected according to the bottom electrode structure of the perovskite device and cannot be applied simultaneously to the same perovskite device.
[0020] Top flexible circuit board 1 Figure 1 and Figure 2As shown, multiple dot-matrix bias electrodes 2 are arranged on the side facing the perovskite device, with each dot-matrix bias electrode 2 corresponding to one perovskite device. Each dot-matrix bias electrode 2 includes nine square pads arranged in a 3×3 array, with a raised solder joint 3 formed on each square pad. In this embodiment, the side length of the square pad is 0.5 mm, and the height of the raised solder joint 3 is 0.3 mm.
[0021] The dot-matrix bias electrode 2 is connected to the positive output terminal of the bias power supply 19 via wires on the top flexible circuit board 1. Multiple raised solder joints 3 can form multiple discrete conductive contact points with the upper electrode layer 12 of the perovskite device, so that the positive bias is stably applied to the upper electrode layer 12. Compared with the monolithic covered electrode, the multi-point cold-pressed connection can reduce the stress concentration of a single large-area connection area during bending, and maintain the conductivity of other contact points when the local contact state changes.
[0022] The top flexible circuit board 1 also includes an interdigitated reference capacitor 4 and a top ground plane exposed copper area 5. The interdigitated reference capacitor 4 is located in the non-cold-pressed contact area of the top flexible circuit board 1 and includes interdigitated electrodes. In this embodiment, the capacitance of the interdigitated reference capacitor 4 is 0.3pF. One end of the interdigitated reference capacitor 4 is connected to the positive output terminal of the bias power supply 19, and the other end is connected to the reference signal acquisition terminal of the analog-to-digital converter 20. The interdigitated reference capacitor 4 can provide a reference signal related to the deformation state and working environment of the top flexible circuit board 1, providing a reference basis for subsequent analysis of deformation interference or environmental noise in the device signal.
[0023] In the first bottom connection method, such as Figure 3 and Figure 4 As shown, the perovskite device is a perovskite device 11 with a conductive bottom electrode. The perovskite device 11 with a conductive bottom electrode includes an upper electrode layer 12, a perovskite layer 13, and a lower electrode layer 14 arranged sequentially, wherein the lower electrode layer 14 has a conductive surface capable of being cold-pressed to conduct electricity.
[0024] In this configuration, a bottom connection electrode 8 (not shown in the figure) is positioned on the side of the bottom flexible circuit board 6 facing the perovskite device. The bottom connection electrode 8 employs the same dot-matrix cold-pressed structure as the top dot-matrix bias electrode 2, including multiple raised solder joints 3. The bottom connection electrode 8 is connected to the device signal acquisition terminal of the analog-to-digital converter 20 via wires on the bottom flexible circuit board 6.
[0025] During assembly, the perovskite device 11 with conductive bottom electrodes is placed between the top flexible circuit board 1 and the bottom flexible circuit board 6, so that the upper electrode layer 12 corresponds to the dot matrix bias electrode 2 and the lower electrode layer 14 corresponds to the bottom connecting electrode 8. Subsequently, the top flexible circuit board 1 and the bottom flexible circuit board 6 are cold-pressed towards each other, so that the raised solder joints 3 on the top form multiple discrete conductive contact points with the upper electrode layer 12, and at the same time, the raised solder joints 3 on the bottom connecting electrode 8 form multiple discrete conductive contact points with the lower electrode layer 14.
[0026] Reference Figure 9 Thus, the upper electrode layer 12 is connected to the positive output terminal of the bias power supply 19 via the dot-matrix bias electrode 2, and the lower electrode layer 14 is connected to the device signal acquisition terminal of the analog-to-digital converter 20 via the bottom connecting electrode 8. In this method, the double-sided electrical connection of the perovskite device is directly achieved through the dot-matrix cold-pressed structure on both the upper and lower sides. This connection method can shorten the signal output path and give the perovskite device good bending adaptability on both the upper and lower sides.
[0027] In the second bottom connection method, such as Figure 5 , Figure 6 , Figure 7 and Figure 8 As shown, the perovskite device is a single-sided conductive perovskite device 15. The single-sided conductive perovskite device 15 includes an upper electrode layer 12, a perovskite layer 13, a lower electrode layer 14, and a single-sided conductive flexible substrate layer 16 arranged sequentially. The conductive layer of the single-sided conductive flexible substrate layer 16 is electrically connected to the lower electrode layer 14 and extends along the device plane beyond the edge of the perovskite layer 13, forming a conductive layer extension 17.
[0028] In this configuration, a perovskite device mounting area 7, a bottom connecting electrode 8, and a conductive layer extension area 9 are provided on the bottom flexible circuit board 6. The perovskite device mounting area 7 is used to support a single-sided conductive perovskite device 15. The conductive layer extension area 9 is located on the side of the perovskite device mounting area 7 and is used to accommodate the conductive layer extension 17. The bottom connecting electrode 8 is located at the corresponding position of the conductive layer extension area 9 and is connected to the device signal acquisition terminal of the analog-to-digital converter 20 through wires on the bottom flexible circuit board 6.
[0029] During installation, a high-temperature resistant adhesive is first applied to the non-conductive connection area of the perovskite device mounting area 7, and then the single-sided conductive perovskite device 15 is fixed within the perovskite device mounting area 7. The conductive layer extension 17 is located within the conductive layer extension area 9 and is connected to the bottom connection electrode 8 via conductive silver paste or flexible conductive carbon paste. The high-temperature resistant adhesive avoids the bottom connection electrode 8, the conductive layer extension area 9, and the conductive area between the conductive layer extension 17 and the bottom connection electrode 8 to avoid affecting the signal output of the conductive layer extension 17.
[0030] Since the conductive surface of the single-sided conductive flexible substrate 16 is not suitable for direct connection to the bottom flexible circuit board 6 via lower dot matrix cold pressing, the conductive layer extension 17 leads the conductive connection of the lower electrode layer 14 to the outside of the perovskite layer 13. Thus, the conductive paste connection can avoid the perovskite functional region, reducing the risk of compression or damage to the perovskite layer 13 during the bottom connection process, while simultaneously enabling the single-sided conductive perovskite device 15 to be stably connected to the bottom connection electrode 8.
[0031] Regardless of the bottom connection method used, the top flexible circuit board 1 is cold-pressed to the upper electrode layer 12 via a dot-matrix bias electrode 2 and raised solder joints 3. Before the top flexible circuit board 1 is aligned and bonded to the perovskite device, an insulating colloid 18 is applied to the non-conductive area around the raised solder joints 3. The insulating colloid 18 avoids the contact points between the raised solder joints 3 and the upper electrode layer 12.
[0032] After cold pressing, insulating colloid 18 is located between and around adjacent raised solder joints 3 to form an insulating and fixing structure. Insulating colloid 18 can reduce the possibility of unintended electrical connections between adjacent raised solder joints 3 and improve the bonding stability between the top flexible circuit board 1 and the perovskite device.
[0033] like Figure 9 As shown, the positive output terminal of the bias power supply 19 is connected to one end of the dot matrix bias electrode 2 and one end of the interdigital reference capacitor 4, respectively; the negative output terminal of the bias power supply 19 is connected to the system reference ground. The dot matrix bias electrode 2 is connected to the upper electrode layer 12 via the raised solder joint 3, so that a positive bias voltage is applied to the upper electrode layer 12.
[0034] For the perovskite device 11 with a conductive bottom electrode, the lower electrode layer 14 is connected to the device signal acquisition terminal of the analog-to-digital converter 20 via a dot-matrix cold-pressing connection of the bottom connecting electrode 8. For the single-sided conductive perovskite device 15, the lower electrode layer 14 is connected to the device signal acquisition terminal of the analog-to-digital converter 20 via a single-sided conductive flexible substrate layer 16, a conductive layer extension 17, a conductive paste, and the bottom connecting electrode 8. The perovskite layer 13 is located between the upper electrode layer 12 and the lower electrode layer 14, and generates a response signal under illumination, radiation, or other measured conditions, which is acquired by the analog-to-digital converter 20.
[0035] The other end of the interdigitated reference capacitor 4 is connected to the reference signal acquisition terminal of the analog-to-digital converter 20, enabling the analog-to-digital converter 20 to simultaneously acquire device signals and reference signals during the operation of the perovskite device. The ground terminal of the analog-to-digital converter 20 is connected to the system reference ground to form a stable signal acquisition reference.
[0036] The exposed copper area 5 of the top ground plane is connected to the top ground plane within the top flexible circuit board 1, and the exposed copper area 10 of the bottom ground plane is connected to the bottom ground plane within the bottom flexible circuit board 6. After the top flexible circuit board 1 and the bottom flexible circuit board 6 are bonded together, the exposed copper areas 5 and 10 of the top ground plane are in contact with each other and conduction is achieved, thus forming a continuous grounding shielding path. After this grounding shielding path is connected to the system reference ground, it can reduce the possibility of external electromagnetic interference coupling into the working circuit of the perovskite device and improve the signal stability of the flexible perovskite matrix integrated structure.
[0037] The processing steps of this invention include: preparing a top flexible circuit board 1 and a bottom flexible circuit board 6; selecting a double-sided dot matrix cold-press connection method or a conductive layer extension connection method according to the bottom electrode structure of the perovskite device; after completing the bottom connection of the perovskite device, aligning and cold-pressing the top flexible circuit board 1 with the upper electrode layer 12 of the perovskite device; making the exposed copper area 5 of the top ground plane and the exposed copper area 10 of the bottom ground plane conductive; and then connecting the bias power supply 19 and the analog-to-digital converter 20 to the corresponding circuit nodes to obtain a flexible perovskite matrix integrated structure.
[0038] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the meaning consistent with their meaning in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined.
[0039] For the sake of simplicity, the method embodiments are described as a series of actions. However, those skilled in the art should understand that the embodiments of the present invention are not limited to the described order of actions, because according to the embodiments of the present invention, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions involved are not necessarily essential to the embodiments of the present invention.
[0040] As can be seen from the above description of the embodiments, those skilled in the art can clearly understand that this application can be implemented by means of software plus necessary general-purpose hardware platforms. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in various embodiments or some parts of the embodiments of this application.
[0041] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.
Claims
1. A method for integrating and processing flexible perovskite matrices using a lattice-type cold pressing process, characterized in that, include: A top flexible circuit board is fabricated, wherein a plurality of matrix-type bias electrodes, interdigitated reference capacitors, a top ground plane, and a copper exposed area of the top ground plane are arranged in a matrix on the side of the top flexible circuit board facing the perovskite device, wherein each of the matrix-type bias electrodes includes a plurality of raised solder joints. A bottom flexible circuit board is fabricated, and a lower electrical connection structure, a bottom ground plane, and a copper exposed area of the bottom ground plane are provided on the bottom flexible circuit board. A plurality of perovskite devices are provided, each of the perovskite devices comprising an upper electrode layer, a perovskite layer and a lower electrode layer disposed sequentially. Each of the perovskite devices is arranged between the top flexible circuit board and the bottom flexible circuit board. The top flexible circuit board is cold-pressed so that the raised solder joints of the dot matrix bias electrode form multiple discrete conductive contact points with the upper electrode layer of the corresponding perovskite device. According to the bottom electrode structure of the perovskite device, the lower electrode layer forms a lower electrical connection with the lower electrical connection structure. Connect one end of the dot matrix bias electrode and one end of the interdigital reference capacitor to the positive output terminal of the bias power supply, connect the other end of the interdigital reference capacitor to the reference signal acquisition terminal of the analog-to-digital converter, and connect the lower electrical connection structure to the device signal acquisition terminal of the analog-to-digital converter. The top flexible circuit board is attached to the bottom flexible circuit board so that the exposed copper area of the top ground plane and the exposed copper area of the bottom ground plane are in contact and connected.
2. The flexible perovskite matrix integrated processing method using a lattice cold pressing process according to claim 1, characterized in that, Each of the dot matrix bias electrodes includes nine square pads arranged in a 3×3 array, and each square pad is provided with a raised solder joint; the side length of each square pad is 0.5 mm, and the height of each raised solder joint is 0.3 mm.
3. The flexible perovskite matrix integrated processing method using a lattice cold pressing process according to claim 1, characterized in that, When the lower electrode layer has a conductive surface that can be cold-pressed into contact, the lower electrical connection structure includes a bottom connection electrode, which includes a plurality of raised solder joints arranged in a dot matrix. The bottom connecting electrode is aligned with the lower electrode layer and cold-pressed to form multiple discrete conductive contact points between the raised solder joints of the bottom connecting electrode and the lower electrode layer.
4. The flexible perovskite matrix integrated processing method using a lattice cold pressing process according to claim 1, characterized in that, When the perovskite device uses a single-sided conductive flexible substrate, the bottom flexible circuit board is provided with a perovskite device mounting area, a conductive layer extension area and a bottom connection electrode. The conductive layer of the single-sided conductive flexible substrate is electrically connected to the lower electrode layer and extends beyond the edge of the perovskite layer to form a conductive layer extension. The single-sided conductive perovskite device is fixed in the perovskite device mounting area, so that the conductive layer extension is located in the conductive layer extension area, and the conductive layer extension is connected to the bottom connecting electrode by conductive paste.
5. The flexible perovskite matrix integrated processing method using a lattice cold pressing process according to claim 4, characterized in that, The conductive paste is a conductive silver paste or a flexible conductive carbon paste; a high-temperature resistant adhesive is provided in the non-conductive connection area of the perovskite device mounting area, and the high-temperature resistant adhesive avoids the bottom connection electrode, the conductive layer extension area, and the conductive area between the conductive layer extension and the bottom connection electrode.
6. The flexible perovskite matrix integrated processing method according to claim 1 using a lattice cold pressing process, characterized in that, The interdigitated reference capacitor is disposed in the non-cold-pressed contact area of the top flexible circuit board, and the capacitance value of the interdigitated reference capacitor is 0.3pF.
7. The flexible perovskite matrix integrated processing method according to claim 1 using a lattice cold pressing process, characterized in that, An insulating colloid is provided in the non-conductive area around the raised solder joint, and the insulating colloid avoids the conductive contact position between the raised solder joint and the upper electrode layer. The negative output terminal of the bias power supply, the ground terminal of the analog-to-digital converter, the top ground plane, and the bottom ground plane are all connected to the system reference ground.
8. A flexible perovskite matrix integrated structure, characterized in that, It includes a top flexible circuit board, a bottom flexible circuit board, multiple perovskite devices arranged in a matrix, a bias power supply, and an analog-to-digital converter. The top flexible circuit board has multiple dot matrix bias electrodes, interdigitated reference capacitors, a top ground plane, and a copper exposed area of the top ground plane on the side facing the perovskite device. Each dot matrix bias electrode includes multiple raised solder joints. The bottom flexible circuit board is provided with a lower electrical connection structure, a bottom grounding plane, and a copper exposed area of the bottom grounding plane. Each of the perovskite devices includes an upper electrode layer, a perovskite layer and a lower electrode layer arranged in sequence, wherein the protruding solder joint is cold-pressed into contact with the corresponding upper electrode layer, and the lower electrode layer is electrically connected to the lower electrical connection structure; One end of the dot matrix bias electrode and one end of the interdigital reference capacitor are respectively connected to the positive output terminal of the bias power supply, the other end of the interdigital reference capacitor is connected to the reference signal acquisition terminal of the analog-to-digital converter, and the lower electrical connection structure is connected to the device signal acquisition terminal of the analog-to-digital converter. The exposed copper area of the top ground plane is in contact with the exposed copper area of the bottom ground plane.
9. The flexible perovskite matrix integrated structure according to claim 8, characterized in that, The perovskite device is a perovskite device with a conductive bottom electrode. The lower electrical connection structure includes a bottom connection electrode, which includes a plurality of raised solder joints arranged in a dot matrix. The raised solder joints of the bottom connecting electrode are cold-pressed into contact with the lower electrode layer to form multiple discrete conductive contact points.
10. The flexible perovskite matrix integrated structure according to claim 8, characterized in that, The perovskite device is a single-sided conductive perovskite device, and the bottom flexible circuit board is provided with a perovskite device mounting area, a conductive layer extension area and a bottom connection electrode. The single-sided conductive perovskite device includes a single-sided conductive flexible substrate layer disposed below the lower electrode layer. The conductive layer of the single-sided conductive flexible substrate layer extends beyond the edge of the perovskite layer to form a conductive layer extension. The conductive layer extension is located within the conductive layer extension area and is connected to the bottom connecting electrode through a conductive paste.