Display panel, preparation method thereof and display device

Abstract

The application discloses a display panel, a preparation method thereof and a display device. The display panel comprises a substrate, an array layer, a display layer and an encapsulation layer. The substrate comprises a support layer, a first flexible layer and a second flexible layer. The material of the support layer comprises ultrathin glass. The first flexible layer and the second flexible layer are arranged on two sides of the support layer. The material of the first flexible layer comprises polyimide. The material of the second flexible layer comprises polyimide. The strength of the support layer is superior to the strength of the first flexible layer and the second flexible layer. The array layer is arranged on the side of the first flexible layer away from the support layer and comprises a pixel driving circuit. The display layer is arranged on the side of the array layer away from the substrate and comprises light-emitting pixels electrically connected with the pixel driving circuit. The light-emitting pixels emit light under the driving of the pixel driving circuit. The encapsulation layer is arranged on the side of the display layer away from the substrate. The design of the application can reduce the overall thickness of the substrate while ensuring the supporting effect and facilitating the bending of the display panel.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display panel, a method for manufacturing the same, and a display device. Background Technology

[0002] With the continuous development of flexible foldable display technology, flexible foldable display terminals are gradually becoming a development trend for future mobile electronic products. However, current flexible foldable display panels suffer from a significant thickness, failing to meet the demand for lightweight design.

[0003] There is an urgent need to solve the problem of thinning foldable products, to reduce the thickness while ensuring the bending performance of flexible display panels, and at the same time, to maintain mechanical properties. Summary of the Invention

[0004] This application mainly provides a display panel, its manufacturing method, and a display device, which can solve the problem of large thickness of the display panel.

[0005] To solve the above-mentioned technical problems, the technical solution adopted in this application is as follows: A display panel is provided, comprising a substrate, an array layer, a display layer, and an encapsulation layer. The substrate includes a support layer, a first flexible layer, and a second flexible layer. The support layer is made of ultra-thin glass and includes a first surface and a second surface disposed opposite to each other. The first flexible layer is located on one side of the first surface of the support layer and is made of polyimide. The second flexible layer is located on one side of the second surface of the support layer and is also made of polyimide. The strength of the support layer is superior to the strength of both the first and second flexible layers. The array layer is located on the side of the first flexible layer opposite to the support layer and includes a pixel driving circuit. The display layer is located on the side of the array layer opposite to the substrate and includes light-emitting pixels electrically connected to the pixel driving circuit, the light-emitting pixels emitting light under the drive of the pixel driving circuit. The encapsulation layer is located on the side of the display layer opposite to the substrate.

[0006] The first flexible layer and / or the second flexible layer cover the periphery of the support layer.

[0007] Wherein, the thickness of the support layer is in the range of 20-50 μm; and / or; the thickness of the first flexible layer is in the range of 6-12 μm; and / or; the thickness of the second flexible layer is in the range of 6-12 μm.

[0008] Preferably, the thickness of the support layer is greater than the thickness of the first flexible layer and the second flexible layer.

[0009] The total thickness of the substrate, the array layer, the display layer, and the encapsulation layer ranges from 58 to 88 μm.

[0010] The first flexible layer and the second flexible layer have the same structure.

[0011] Wherein, the orthographic projection of the first flexible layer onto the support layer covers the support layer, and the orthographic projection of the second flexible layer onto the support layer covers the support layer.

[0012] The substrate further includes a buffer layer located between the first flexible layer and the array layer.

[0013] Preferably, the material of the buffer layer includes at least one of silicon nitride and silicon oxide.

[0014] Another technical solution adopted in this application is to provide a display device, which includes the display panel described in the above embodiments.

[0015] Another technical solution adopted in this application is: providing a method for manufacturing a display panel, the method comprising: preparing a substrate, wherein the substrate includes a support layer and a first flexible layer and a second flexible layer respectively disposed on opposite sides of the support layer, the support layer being made of ultra-thin glass, the first flexible layer and the second flexible layer being made of polyimide, and the support layer having a strength superior to the first flexible layer and the second flexible layer; and sequentially forming an array layer, a display layer and an encapsulation layer on the side of the first flexible layer opposite to the support layer.

[0016] The step of preparing the substrate includes: coating a polyimide material onto a first surface of the support layer; coating a polyimide material onto a second surface of the support layer; and curing the polyimide material on the support layer in a vacuum environment.

[0017] Preferably, the step of curing the polyimide material on the support layer in a vacuum environment includes: raising the temperature of the support layer to a first temperature in a vacuum environment and maintaining the first temperature for a first preset time; raising the temperature of the support layer to a second temperature and maintaining the second temperature for a second preset time; and raising the temperature of the support layer to a third temperature.

[0018] The beneficial effects of this application are as follows: In the substrate of the display panel of this application, ultra-thin glass is used as a support layer, which is thin yet has good support performance. A first flexible layer and a second flexible layer are respectively set on both sides of the support layer. The materials of the first flexible layer and the second flexible layer both include polyimide, which can protect the ultra-thin glass from external impacts during the manufacturing process and avoid edge damage and cracks. Therefore, the solution of this application, through the combined use of the first flexible layer, the support layer and the second flexible layer, can reduce the overall thickness of the substrate while ensuring the support effect, facilitating the bending of the display panel and improving its service life. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Among them:

[0020] Figure 1 This is a schematic diagram of the structure of one embodiment of the display panel in this application;

[0021] Figure 2 for Figure 1 A schematic diagram of the structure of one embodiment of the middle substrate;

[0022] Figure 3 for Figure 1 A schematic diagram of another embodiment of the middle substrate;

[0023] Figure 4 for Figure 1 A schematic diagram of the structure of the array layer and display layer in one embodiment;

[0024] Figure 5 for Figure 4 A schematic diagram of the structure of one embodiment of the middle display layer;

[0025] Figure 6 This is a flowchart illustrating one embodiment of the method for preparing the display panel in this application.

[0026] Explanation of reference numerals in the figures: 10 Substrate; 11 Support layer; 111 First surface; 112 Second surface; 12 First flexible layer; 13 Second flexible layer; 14 Buffer layer; 20 Array layer; 210 Pixel driving circuit; 211 Transistor; 2111 Semiconductor; 2112 Gate; 2113 Source; 2114 Drain; 212 Capacitor; 2121 First electrode; 2122 Second electrode; 201 First metal layer; 202 Second metal layer; 203 Third metal layer 22 First insulating layer; 23 Second insulating layer; 24 Third insulating layer; 25 Planarization layer; 26 Active layer; 27 Source doped region; 28 Drain doped region; 30 Display layer; 31 Light-emitting material layer; 32 Anode; 33 First general-purpose layer; 331 Electron injection layer; 332 Electron transport layer; 34 Organic light-emitting layer; 35 Second general-purpose layer; 351 Hole transport layer; 352 Hole injection layer; 36 Cathode; 37 Light-emitting pixel; 40 Encapsulation layer; 60 Isolator. Detailed Implementation

[0027] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0028] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0029] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined.

[0030] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0031] In the description of the embodiments of this application, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0032] Please see Figure 1 , Figure 2 , Figure 3 and Figure 4This application provides a display panel including a substrate 10, an array layer 20, a display layer 30, and an encapsulation layer 40. The substrate 10 includes a support layer 11, a first flexible layer 12, and a second flexible layer 13. The support layer 11 is made of ultrathin glass and includes a first surface 111 and a second surface 112 disposed opposite to each other. The first flexible layer 12 is located on one side of the first surface 111 of the support layer 11, and the first flexible layer 12 is made of polyimide (PI). The second flexible layer 13 is located on the support layer 11. On one side of the second surface 112, the material of the second flexible layer 13 includes polyimide, wherein the strength of the support layer 11 is greater than that of the first flexible layer 12 and the second flexible layer 13; the array layer 20 is located on the side of the first flexible layer 12 away from the support layer 11, and includes a pixel driving circuit 210; the display layer 30 is located on the side of the array layer 20 away from the substrate 10, and includes light-emitting pixels 37 electrically connected to the pixel driving circuit 210, the light-emitting pixels 37 emitting light under the drive of the pixel driving circuit 210; the encapsulation layer 40 is located on the side of the display layer 30 away from the substrate 10.

[0033] Specifically, a first flexible layer 12 and a second flexible layer 13 are respectively disposed on both sides of the support layer 11 in the substrate 10 to form a sandwich structure. At the same time, the strength of the support layer 11 is better than that of the first flexible layer 12 and the second flexible layer 13. The first flexible layer 12 and the second flexible layer 13 can protect the support layer 11. By using the combination of the first flexible layer 12, the support layer 11 and the second flexible layer 13, the overall thickness of the substrate 10 is reduced while ensuring the support effect, which facilitates the bending of the display panel and improves its service life.

[0034] The support layer 11 is made of ultra-thin glass, which boasts advantages such as portability, high light transmittance, high flatness, good chemical stability, strong thermal stability, excellent insulation, and good processability. Specifically, the extremely thin thickness of ultra-thin glass significantly reduces the weight of the display panel, making the display device lighter and thinner, easier to carry and install, meeting modern consumers' demand for slimmer portable electronic devices. Simultaneously, ultra-thin glass exhibits excellent optical properties, achieving high light transmittance, resulting in clearer, brighter, and more vibrant images on the display panel. For example, in technologies such as liquid crystal displays (LCDs) and organic light-emitting diode (OLEDs), ultra-thin glass allows for better light transmission, improving display effects. Furthermore, ultra-thin glass provides an extremely flat surface, ensuring uniform deposition and arrangement of functional layers within the display panel, contributing to improved pixel uniformity and consistency, reducing defects and distortion in the display image, and enhancing display quality. Finally, ultra-thin glass possesses good chemical stability, resisting corrosion and influence from external chemicals, ensuring the performance stability and reliability of the display panel during long-term use, and extending the lifespan of the display device. Meanwhile, ultra-thin glass possesses high thermal stability, maintaining dimensional stability and resisting deformation under temperature variations encountered during the manufacturing and use of the display panel. This prevents adverse effects on the structure and performance of the display panel. Furthermore, ultra-thin glass is an excellent insulator, effectively isolating circuits and components within the display panel to prevent short circuits and leakage, ensuring the safe operation of the display device. In addition, ultra-thin glass is easy to cut, grind, and polish, allowing for precise processing to meet the diverse design needs of various display devices based on different panel sizes and shapes.

[0035] The first flexible layer 12 and the second flexible layer 13 are both made of polyimide (PI). Specifically, PI has advantages such as excellent thermal stability, good mechanical properties, low dielectric constant, strong chemical stability, high insulation, and adjustable optical properties. Specifically, PI has a high glass transition temperature and thermal decomposition temperature, enabling it to maintain stable performance in high-temperature environments. During the manufacturing process of the display panel, processes such as photolithography and coating generate high temperatures, which the PI substrate can withstand without deformation or performance degradation, ensuring high-precision manufacturing and long-term stability of the display panel. At the same time, PI has high strength and flexibility, providing sufficient support strength while withstanding bending and stretching forces to a certain extent without breaking. This allows for flexible designs of the display panel, such as foldable and rollable displays, meeting the diverse form requirements of modern electronic devices. Furthermore, PI has good resistance to most chemical reagents and is not easily corroded or chemically contaminated. During the manufacturing process of the display panel, it can resist the erosion of various chemical solutions, ensuring the integrity and performance stability of the substrate 10. In long-term use, it can also resist chemicals in the external environment, extending the lifespan of the panel. In addition, PI is an excellent insulating material, effectively isolating circuits and components in the display panel, preventing leakage and short circuits, and ensuring the normal operation and safety of the display panel. Furthermore, by designing and modifying the PI molecular structure, its optical properties, such as transparency and refractive index, can be adjusted to meet the optical performance requirements of different display technologies. For example, in organic light-emitting diode (OLED) displays, the light extraction efficiency and display quality can be improved by adjusting the optical properties of the PI substrate.

[0036] Meanwhile, the first flexible layer 12 and the second flexible layer 13 are located on both sides of the support layer 11, which can protect the ultra-thin glass from external impacts during the manufacturing process and prevent edge damage and cracks.

[0037] Please continue reading. Figure 1 An array layer 20 is disposed on the side of the first flexible layer 12 away from the support layer 11, and a display layer 30 is disposed on the side of the array layer 20 away from the substrate 10. The pixel driving circuit 210 in the array layer 20 is electrically connected to the light-emitting pixel 37 in the display layer 30, so that the light-emitting pixel 37 emits light under the drive of the pixel driving circuit 210. The encapsulation layer 40 is located on the side of the display layer 30 away from the substrate 10, which can prevent moisture from entering the display layer 30 and damaging the light-emitting pixel 37.

[0038] Please see Figure 3 In one embodiment, the first flexible layer 12 covers the periphery of the support layer 11 to protect the periphery of the support layer 11 and prevent damage to the periphery of the support layer 11 during processing.

[0039] In one embodiment, the second flexible layer 13 covers the periphery of the support layer 11, protecting the periphery of the support layer 11 and preventing damage to the periphery of the support layer 11 during processing.

[0040] In one embodiment, the first flexible layer 12 and the second flexible layer 13 simultaneously cover the periphery of the support layer 11 to protect the periphery of the support layer 11 and prevent damage to the periphery of the support layer 11 during processing.

[0041] It should be noted that in other embodiments, the first flexible layer 12 and the second flexible layer 13 may not cover the periphery of the support layer 11.

[0042] Please continue reading. Figure 2 The thickness of the support layer 11 ranges from 20 to 50 μm. This thickness range can prevent the support layer 11 from being too thin, which would result in insufficient support strength for the substrate 10, and can also prevent the support layer 11 from being too thick, which would result in an overall thick display panel. Specifically, the thickness of the support layer 11 can be 20, 25, 30, 35, 40, 45 or 50 μm. The variety of thickness options for the support layer 11 makes it easy to select a support layer 11 of a certain thickness according to the needs of the display panel.

[0043] In one embodiment, the thickness of the first flexible layer 12 ranges from 6 to 12 μm; specifically, the thickness of the first flexible layer 12 can be 6, 8, 10, or 12 μm. The variety of thickness options for the first flexible layer 12 facilitates the selection of a specific thickness based on the needs of the display panel. By using a relatively thin first flexible layer 12 to protect the support layer 11, the overall thickness of the substrate 10 is reduced while ensuring effective protection.

[0044] In one embodiment, the thickness of the second flexible layer 13 ranges from 6 to 12 μm; specifically, the thickness of the second flexible layer 13 can be 6, 8, 10, or 12 μm. The variety of thickness options for the second flexible layer 13 facilitates the selection of a specific thickness based on the needs of the display panel. By using a relatively thin second flexible layer 13 to protect the support layer 11, the overall thickness of the substrate 10 is reduced while ensuring effective protection.

[0045] Please continue reading. Figure 2 and Figure 3 The thickness of the support layer 11 is greater than the thickness of the first flexible layer 12 and the second flexible layer 13. Specifically, since the support layer 11 plays a supporting role, the design of the support layer 11 being thicker than the first flexible layer 12 and the second flexible layer 13 achieves the supporting function of the substrate 10, which facilitates maintaining the structural stability of the display panel. At the same time, the design of the first flexible layer 12 and the second flexible layer 13 being thinner than the support layer 11, with the first flexible layer 12 and the second flexible layer 13 being thinner, helps to reduce the overall thickness of the substrate 10 and achieve the lightweighting of the substrate 10.

[0046] Please continue reading. Figure 1 The total thickness of the substrate 10, array layer 20, display layer 30, and encapsulation layer 40 ranges from 58 to 88 μm. Specifically, the total thickness of the substrate 10, array layer 20, display layer 30, and encapsulation layer 40 can be 58, 60, 65, 68, 70, 75, 78, 80, 85, or 88 μm. The smaller total thickness optimizes the structure of the display panel.

[0047] In one embodiment, the first flexible layer 12 and the second flexible layer 13 have the same structure. Specifically, the first flexible layer 12 and the second flexible layer 13 have the same thickness, which facilitates the use of the same processing parameters and improves the manufacturing efficiency. In another embodiment, the first flexible layer 12 and the second flexible layer 13 are made of the same material, which facilitates the use of the same processing equipment and materials to manufacture the first flexible layer 12 and the second flexible layer 13, further improving the manufacturing efficiency.

[0048] Please continue reading. Figure 2 and Figure 3 The orthographic projection of the first flexible layer 12 onto the support layer 11 covers the support layer 11, and the orthographic projection of the second flexible layer 13 onto the support layer 11 also covers the support layer 11. Specifically, in one embodiment, the edges of the first flexible layer 12, the support layer 11, and the second flexible layer 13 are flush in the substrate 10. Since all three have the same size, the first flexible layer 12, the support layer 11, and the second flexible layer 13 are stacked sequentially, facilitating the mass production of the substrate 10. In one embodiment, at least one of the first flexible layer 12 and the second flexible layer 13 wraps around the periphery of the support layer 11. Since the size of the first flexible layer 12 and the second flexible layer 13 is larger than the size of the support layer 11, the first flexible layer 12 and the second flexible layer 13 can protect the periphery of the support layer 11, further ensuring the support effect of the support layer 11 and improving the service life of the substrate 10.

[0049] Please continue reading. Figure 2 or Figure 3 The substrate 10 also includes a buffer layer 14 located between the first flexible layer 12 and the array layer 20; specifically, the buffer layer 14 serves to connect the substrate 10 and the array layer 20, and can protect the array layer 20 and prevent external moisture from entering the array layer 20 through the substrate 10.

[0050] In one embodiment, the material of the buffer layer 14 includes at least one of silicon nitride and silicon oxide. Specifically, the material of the buffer layer 14 includes inorganic insulating materials, specifically silicon dioxide (SiO2) and silicon nitride (Si3N4). SiO2 possesses excellent insulation properties, chemical stability, and thermal stability, effectively blocking current leakage and preventing short circuits between different electrodes. Furthermore, it has high optical transparency and minimal impact on the optical performance of the display panel. It is widely used in various display technologies such as liquid crystal displays (LCDs) and organic light-emitting diode (OLED) display panels. Si3N4 exhibits excellent insulation properties, high hardness, and wear resistance, effectively protecting the circuit structure in the array layer 20. In addition, it has good ability to block moisture and oxygen, preventing oxidation and corrosion of the array layer.

[0051] Please see Figure 4 and Figure 5 In the display panel, a substrate 10, an array layer 20, and a display layer 30 are stacked sequentially, with the array layer 20 positioned between the substrate 10 and the display layer 30. The array layer 20 includes a pixel driving circuit 210, which drives the display layer 30 to emit light. The pixel driving circuit 210 includes structures such as a transistor 211 and a capacitor 212. The transistor 211 includes a semiconductor 2111, a gate 2112, a source 2113, and a drain 2114. The capacitor 212 includes a first electrode 2121 and a second electrode 2122. The gate 2112 and the first electrode 2121 can be located in the first metal layer 201, the second electrode 2122 can be located in the second metal layer 202, and the source 2113 and drain 2114 can be located in the third metal layer 203. Interlayer insulating layers are provided between the first metal layer 201 and the second metal layer 202, and between the second metal layer 202 and the third metal layer 203.

[0052] The pixel driving circuit 210 can be, for example, a 2T1C circuit, a 7T1C circuit, a 7T2C circuit, or a 9T1C circuit, and this application does not limit its specific structure. The "2T1C circuit" refers to a pixel circuit that includes two thin-film transistors (T) and one capacitor (C), and so on for "7T1C circuit", "7T2C circuit", "9T1C circuit", etc.

[0053] Please continue reading. Figure 4 and Figure 5The display layer 30 includes multiple light-emitting pixels 37, each comprising an anode 32, a light-emitting material layer 31, and a cathode 36 stacked sequentially. Specifically, the light-emitting material layer 31 includes a first general-purpose layer 33, an organic light-emitting layer 34, and a second general-purpose layer 35. The anode 32, light-emitting material layer 31, and cathode 36 in the light-emitting pixel 37 are stacked sequentially in the direction away from the substrate 10. The display layer 30 performs the function of emitting light; the anode 32 and cathode 36 are electrodes in the display layer 30, where the cathode 36 transports electrons and the anode 32 absorbs electrons. In the organic light-emitting layer 34, electrons and holes combine, and the electrons emit energy in the form of photons, i.e., emitting light. Simultaneously, one of the first general-purpose layer 33 and the second general-purpose layer 35 provides the organic light-emitting layer 34 with the electrons required for emitting light, and the other provides the organic light-emitting layer 34 with the holes required for emitting light. The combination of electrons and holes in the organic light-emitting layer 34 causes it to emit light. In one embodiment, the first general-purpose layer 33 includes an electron injection layer 331 and an electron transport layer 332, and the second general-purpose layer 35 includes a hole transport layer 351 and a hole injection layer 352. In another embodiment, the first general-purpose layer 33 may not include the electron injection layer 331, but only the electron transport layer 332.

[0054] Please continue reading. Figure 4 The display panel also includes an isolator 60, which is disposed around the display layer 30. Specifically, the isolator 60 prevents crosstalk between light emitted by light-emitting pixels 37 of different colors, thus ensuring the display quality of the display panel.

[0055] In one embodiment, the cathode 36 of the light-emitting pixel 37 is made of at least one of silver, gold, graphite, carbon nanotubes, graphene, nanometals, indium tin oxide, or indium zinc oxide. The anode 32 of the light-emitting pixel 37 is made of at least one of indium tin oxide, indium zinc oxide, or indium gallium zinc oxide.

[0056] This application also provides a display device, which includes the display panel in any of the above embodiments. The display device in the embodiments of the present invention can be any product or component with display function, such as electronic paper, mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigator.

[0057] Please see Figure 6 This application also provides a method for manufacturing a display panel, the method comprising:

[0058] S10: Prepare substrate 10, wherein substrate 10 includes a support layer 11 and a first flexible layer 12 and a second flexible layer 13 respectively disposed on opposite sides of the support layer 11. The material of the support layer 11 includes ultrathin glass, and the materials of the first flexible layer 12 and the second flexible layer 13 include polyimide. The strength of the support layer 11 is better than the strength of the first flexible layer 12 and the second flexible layer 13.

[0059] Specifically, a substrate 10 is fabricated, in which a first flexible layer 12 and a second flexible layer 13 are respectively disposed on both sides of a support layer 11. In one embodiment, the support layer 11 is fabricated using ultrathin glass, and the first flexible layer 12 and the second flexible layer 13 are fabricated using polyimide. Since the strength of the support layer 11 is greater than that of the first flexible layer 12 and the second flexible layer 13, the thickness of the support layer 11 is set to be greater than the thickness of the first flexible layer 12 and the second flexible layer 13, thus ensuring the support effect of the substrate 10.

[0060] S20: An array layer 20, a display layer 30, and an encapsulation layer 40 are sequentially formed on the side of the first flexible layer 12 away from the support layer 11.

[0061] Specifically, an array layer 20 is fabricated on the side of the first flexible layer 12 away from the support layer 11; a display layer 30 is fabricated on the side of the array layer 20 away from the substrate 10; and then an encapsulation layer 40 is fabricated on the side of the display layer 30 away from the substrate 10, thus completing the fabrication of the display panel.

[0062] In one embodiment, step S10 specifically includes:

[0063] S11: Polyimide material is coated on the first surface 111 of the support layer 11.

[0064] Specifically, using the support layer 11 as a carrier, polyimide material is coated on the first surface 111 of the support layer 11.

[0065] S12: Coating the second surface 112 of the support layer 11 with polyimide material.

[0066] Specifically, polyimide material is coated on the second surface 112 of the support layer 11.

[0067] S13: Curing the polyimide material on the support layer 11 under vacuum conditions.

[0068] Specifically, the curing effect of the polyimide material can be guaranteed in a vacuum environment. After curing the polyimide material located on both sides of the support layer 11, the first flexible layer 12 and the second flexible layer 13 are obtained respectively.

[0069] In one embodiment, step S13 specifically includes:

[0070] S131: After raising the temperature of the support layer 11 to a first temperature in a vacuum environment, maintain the first temperature for a first preset time period.

[0071] Specifically, the temperature is first raised to a first temperature and maintained for a first preset time under vacuum conditions to facilitate the initial curing of the polyimide material. In one embodiment, the first temperature is 100°C and the first preset time is 30 minutes. Heating causes the PI molecules to undergo a cross-linking reaction, forming a three-dimensional network structure, thereby achieving curing. During the heating process, the active groups in the PI molecules (such as anhydride groups, amine groups, etc.) undergo a condensation reaction, removing small molecules (such as water, alcohols, etc.) to form a stable imide ring structure.

[0072] S132: After the temperature of the support layer 11 is further increased to the second temperature, the second temperature is maintained for a second preset duration.

[0073] Specifically, the temperature of the support layer 11 is increased from a first temperature to a second temperature and maintained for a second preset time. In one embodiment, the second temperature is 150°C and the second preset time is 40 minutes. During this stage, it is convenient to remove the solvent from the polyimide material. Since the polyimide material is coated by mixing the solvent and the polyimide material, it is easy to coat the material evenly. After the support layer 11 coated with the polyimide material is maintained at the second temperature for the second time, it helps to remove the solvent.

[0074] S133: Continue to raise the temperature of the support layer 11 to the third temperature.

[0075] Specifically, after raising the temperature to a third temperature, the polyimide material is cured to obtain the first flexible layer 12 and the second flexible layer 13. In one embodiment, the third temperature can also be maintained for a third preset time to enhance the curing effect. In one embodiment, the third temperature is 260°C, and the third preset time is 15 minutes. The third preset time is shorter than the first preset time and the second preset time.

[0076] It should be noted that, in other embodiments, step S13 may also include:

[0077] S134: Chemically cure the support layer 11.

[0078] Specifically, chemical reagents are used to react with the active groups in the PI molecule, initiating cross-linking and curing. Commonly used chemical curing agents include acid anhydrides, isocyanates, and epoxy resins. For example, acid anhydride curing agents can react with the amine groups in the PI molecule to form amide and ester bonds, thereby achieving curing. After curing, the PI yields a first flexible layer 12 and a second flexible layer 13. Chemical curing can reduce damage to the material from high temperatures and decrease the generation of internal stress; moreover, the curing speed is relatively fast, and curing can be completed in a short time.

[0079] It should be noted that, in other embodiments, step S13 may also include:

[0080] S135: Photocur the support layer 11.

[0081] Photosensitive groups, such as cinnamate ester groups and acrylate groups, are introduced into the PI molecule. Then, ultraviolet (UV) irradiation causes the photosensitive groups to undergo a photopolymerization reaction, thereby achieving curing. During the photocuring process, the photosensitive groups in the PI molecule generate free radicals or cations under the excitation of UV light, which initiate the polymerization reaction of monomers or prepolymers to form a cross-linked structure.

[0082] Photopolymerization offers fast curing speeds, enabling curing to be completed in a short time and improving production efficiency. It also allows for precise patterned curing; by using masking technology, curing can be performed on specific areas to form the desired graphic structure.

[0083] In other embodiments, step S13 may further include:

[0084] S136: Electron beam curing is performed on the support layer 11.

[0085] High-energy electron beams are used to irradiate PI materials, causing PI molecules to generate free radicals or ions, initiating a cross-linking reaction and achieving curing. Electron beams have high energy and penetrating power, allowing them to reach deep into the PI material and initiate cross-linking between molecular chains. Advantages include extremely fast curing speed, completing curing almost instantly, greatly improving production efficiency; and strong penetrating power, enabling uniform curing of thick-film materials or complex-shaped components.

[0086] In one embodiment, step S20 includes:

[0087] S21: Fabrication of array layer 20 on one side of substrate 10.

[0088] Specifically, in combination Figure 4The array layer 20 is located on the side of the buffer layer 14 in the substrate 10 away from the support layer 11. In one embodiment, an active layer 26 is fabricated on the side of the buffer layer 14 away from the support layer 11. Specifically, a semiconductor material is deposited on the surface of the buffer layer 14. The semiconductor material is patterned to form the active layer 26, and a channel region and source doped regions 27 and drain doped regions 28 located on both sides of the channel region are formed on the active layer 26. The source doped regions 27 and drain doped regions 28 are obtained by ion doping the corresponding regions.

[0089] Further, a first insulating layer 22 is deposited on the active layer 26 and the buffer layer 14, and then a first metal layer 201 is prepared. By patterning the first metal layer 201, a gate 2112 and a first electrode 2121 are obtained. The first insulating layer 22 serves to isolate the gate 2112 and the active layer 26.

[0090] Furthermore, a second insulating layer 23 is deposited on the gate 2112 and the first insulating layer 22, and a second metal layer 202 is prepared on one side of the second insulating layer 23. The second metal layer 202 is then patterned to obtain a second electrode plate 2122.

[0091] Furthermore, a third insulating layer 24 is deposited on one side of the second metal layer 202 and the second insulating layer 23. The third insulating layer 24 is patterned to obtain a first via (not shown). The first via passes through the third insulating layer 24, the second insulating layer 23 and the first insulating layer 22 to reach the source doped region 27 and the drain doped region 28 of the active layer 26.

[0092] Furthermore, source and drain materials are deposited in the third insulating layer 24 and the first via, and then the third metal layer 203 is patterned to obtain source 2113 and drain 2114. Source 2113 and drain 2114 are connected to source doped region 27 and drain doped region 28 through the first via, respectively. Of course, in addition to forming source 2113 and drain 2114, signal lines such as data lines and power lines are also formed when the third metal layer 203 is patterned.

[0093] Furthermore, a planarization layer 25 is deposited on the source electrode 2113, the drain electrode 2114, and the third insulating layer 24. The surface of the planarization layer 25 facing away from the substrate 10 is planar, which facilitates the preparation of subsequent film layers.

[0094] Furthermore, the planarization layer 25 is patterned to form multiple second vias (not shown). The second vias penetrate the planarization layer 25 and expose at least a portion of the surface of the source electrode 2113 or the drain electrode 2114. A transparent conductive material, such as indium tin oxide, is deposited in the planarization layer 25 and the second vias. The transparent conductive material is patterned to form an anode 32. The anode 32 is connected to the source electrode 2113 or the drain electrode 2114 through the second vias.

[0095] Furthermore, a pixel definition layer is deposited on the surface of the planarization layer 25, and then patterned to form pixel openings (not shown) to expose at least a portion of the anode 32, while simultaneously obtaining an isolator 60 disposed around the anode 32.

[0096] S22: Fabrication of display layer 30 on one side of array layer 20.

[0097] Specifically, a display layer 30 is fabricated on one side of the array layer 20. A light-emitting material is deposited within the pixel opening to obtain a light-emitting material layer 31. A metal material, such as Al, is deposited on the light-emitting material layer 31, and the metal material is patterned to form a cathode 36. Fabricating the cathode 36 as a reflective electrode improves light utilization. Naturally, the light-emitting material layer 31 is fabricated sequentially by forming a first general-purpose layer 33, an organic light-emitting layer 34, and a second general-purpose layer 35. The first general-purpose layer 33 includes an electron injection layer 331 and an electron transport layer 332 located between the anode 32 and the organic light-emitting layer 34. The second general-purpose layer 35 includes a hole transport layer 351 and a hole injection layer 352 located between the organic light-emitting layer 34 and the cathode 36.

[0098] S22: Prepare the encapsulation layer 40 on one side of the display layer 30.

[0099] Specifically, an encapsulation layer 40 is prepared on one side of the display layer 30. The encapsulation layer 40 can be thin-film encapsulation, which can be a stacked structure or a multilayer structure formed by sequentially stacking three thin films: a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer. This is used to protect the display layer 30 and prevent water and oxygen intrusion that could cause the light-emitting material layer 31 to fail.

[0100] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A display panel, characterized in that, The display panel includes: Substrate, the substrate comprising: A support layer, the material of which includes ultra-thin glass, the support layer including a first surface and a second surface disposed opposite to each other; A first flexible layer is located on one side of the first surface of the support layer, and the material of the first flexible layer includes polyimide; A second flexible layer is located on one side of the second surface of the support layer. The material of the second flexible layer includes polyimide. The strength of the support layer is greater than that of the first flexible layer and the second flexible layer. An array layer, located on the side of the first flexible layer opposite to the support layer, includes a pixel driving circuit. The display layer, located on the side of the array layer opposite to the substrate, includes light-emitting pixels electrically connected to the pixel driving circuit, and the light-emitting pixels emit light under the drive of the pixel driving circuit; An encapsulation layer is located on the side of the display layer opposite to the substrate.

2. The display panel according to claim 1, characterized in that, The first flexible layer and / or the second flexible layer cover the periphery of the support layer.

3. The display panel according to claim 1, characterized in that, The thickness of the support layer ranges from 20 to 50 μm; And / or; the thickness of the first flexible layer ranges from 6 to 12 μm; And / or; the thickness of the second flexible layer ranges from 6 to 12 μm; Preferably, the thickness of the support layer is greater than the thickness of the first flexible layer and the second flexible layer.

4. The display panel according to claim 1, characterized in that, The total thickness of the substrate, the array layer, the display layer, and the encapsulation layer ranges from 58 to 88 μm.

5. The display panel according to claim 1, characterized in that, The first flexible layer and the second flexible layer have the same structure.

6. The display panel according to claim 1, characterized in that, The orthographic projection of the first flexible layer onto the support layer covers the support layer, and the orthographic projection of the second flexible layer onto the support layer covers the support layer.

7. The display panel according to claim 1, characterized in that, The substrate further includes a buffer layer located between the first flexible layer and the array layer; Preferably, the material of the buffer layer includes at least one of silicon nitride and silicon oxide.

8. A display device, characterized in that, Includes the display panel as described in any one of claims 1-7.

9. A method for manufacturing a display panel, characterized in that, The method includes: A substrate is prepared, wherein the substrate includes a support layer and a first flexible layer and a second flexible layer respectively disposed on opposite sides of the support layer, the support layer is made of ultrathin glass, the first flexible layer and the second flexible layer are made of polyimide, and the strength of the support layer is better than the strength of the first flexible layer and the second flexible layer. An array layer, a display layer, and an encapsulation layer are sequentially formed on the side of the first flexible layer opposite to the support layer.

10. The preparation method according to claim 9, characterized in that, The step of preparing the substrate includes: A polyimide material is coated on the first surface of the support layer; A polyimide material is coated on the second surface of the support layer; The polyimide material on the support layer is cured in a vacuum environment; Preferably, the step of curing the polyimide material on the support layer in a vacuum environment includes: After raising the temperature of the support layer to a first temperature in a vacuum environment, the first temperature is maintained for a first preset time. After the temperature of the support layer is further increased to the second temperature, the second temperature is maintained for a second preset duration. The temperature of the support layer is further increased to a third temperature.

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