Groove bar and processing method and silicon boat thereof

Abstract

The application relates to the field of semiconductor manufacturing equipment and discloses a trench bar, one side of the trench bar is provided with a first center line along a first direction, the first center line is coincident with the center of a wafer, and the trench bar comprises a contact groove, a plurality of contact grooves are arranged at intervals in the trench bar along the first direction, one end of the contact groove along a second direction is provided with a first opening, and the contact groove penetrates through the trench bar along a third direction; a first contact surface is arranged at the bottom of the contact groove along the first direction, the first contact surface is in abutment with the bottom of the wafer, the first contact surface extends along the second direction, and the first contact surface is connected with the first opening; a second contact surface is arranged at one end of the first contact surface along the second direction and away from the first opening, a first included angle is formed between the first contact surface and the second contact surface, the first included angle is less than 90 DEG, and the first contact surface and the second contact surface are connected through a first transition arc. The application provides a trench bar capable of reducing large-area hard contact with a wafer, a processing method of the trench bar and a silicon boat.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing equipment, and in particular to trench bars and their processing methods and silicon boats. Background Technology

[0002] Silicon boats are core support tools in semiconductor manufacturing. They are mainly used to support and position wafers in high-temperature processes (such as diffusion, oxidation, and vapor deposition) to prevent silicon wafers from being contaminated, damaged, or displaced during processing, thus ensuring process uniformity and wafer quality. In existing technologies, conventional silicon boats are mainly composed of a top plate, flanges, and multiple groove bars. Among them, the groove bars are the core load-bearing components of the silicon boat, directly undertaking the functions of supporting and limiting the wafers. Specifically, the groove bars have several grooves spaced along their length for clamping and supporting the wafers. Through the corresponding cooperation of the grooves on both sides of the groove bars, multiple wafers can be stably placed in a layered and spaced manner to meet the production needs of batch wafer synchronous processing. Currently, the mainstream trenches in the industry adopt a straight groove structure, and the bottom of the trenches all adopt a vertical plane structure. In the actual production and processing, the wafer will inevitably experience slight deflection, shaking, or small displacement due to factors such as equipment transmission and high-temperature airflow disturbance. When the wafer deflects or tilts, the edge of the wafer is very likely to have large-area hard contact, friction, or even compression with the vertical bottom of the trench. Because semiconductor wafer substrates have low hardness, thinness, and extremely high precision requirements, the aforementioned hard contact can directly cause mechanical damage such as chipping, scratches, and microcracks at the wafer edges. This not only results in the direct scrapping of the wafer and a significant increase in production costs, but also causes uneven subsequent high-temperature processing due to wafer surface damage and stress deformation, leading to problems such as abnormal wafer electrical performance and deviations in process parameters. Summary of the Invention

[0003] This application primarily addresses the technical problem in existing technologies where the vertical bottom of the trench in the groove bar can cause large-area hard contact, friction, or even compression with the wafer. It provides a groove bar that reduces this large-area hard contact with the wafer, its processing method, and a silicon boat.

[0004] To address the aforementioned technical problems, this application provides a trench bar in its first aspect. The trench bar is used to place a wafer, and a first center line is provided on one side along a first direction, the first center line coinciding with the center of the wafer. The trench bar includes... The groove has a plurality of contact grooves spaced apart along a first direction inside the groove bar. One end of the contact groove along a second direction has a first opening, and the contact groove penetrates the groove bar along a third direction. The first contact surface is provided at the bottom of the contact groove along the first direction, the first contact surface abuts against the bottom of the wafer, the first contact surface extends along the second direction, and the first contact surface is connected to the first opening; The second contact surface is provided at the end of the first contact surface along the second direction and away from the first opening. The second contact surface and the first contact surface form a first included angle, which is less than 90°. The first contact surface and the second contact surface are connected by a first transition arc.

[0005] In one embodiment, a contact line is formed between the contact groove and the groove bar. The contact line is formed on the outer surface of the contact groove and has a rounded chamfer. The contact line includes a first contact line and a second contact line. The first contact line is located at one end of the contact groove along the second direction and is disposed close to the first opening. The second contact line is located at both ends of the contact groove along the third direction.

[0006] In one embodiment, the bottom of the contact groove along the second direction has a first connecting surface, and the second contact surface is in contact with the first connecting surface to form a first structural state of the groove bar.

[0007] In one embodiment, the second contact surface and the first connecting surface are connected by a second transition arc.

[0008] In one embodiment, the bottom of the contact groove along the second direction has a first connecting surface, and the second contact surface is spaced apart from the first connecting surface to form a second structural state of the groove bar.

[0009] In one embodiment, the first connecting surface is an arc-shaped structure, and the first connecting surface and the horizontal cross-section in the first direction form a first intersection line. When the center of the wafer coincides with the first center line, the shortest distance between each point on the first intersection line and the sidewall of the wafer remains consistent.

[0010] In one embodiment, the second contact surface is an arc-shaped structure, and the second contact surface forms a second intersection line with the horizontal cross-section in the first direction. When the center of the wafer coincides with the first center line, the shortest distance between each point on the second intersection line and the sidewall of the wafer remains consistent.

[0011] A second aspect of this application provides a silicon boat, wherein the silicon boat includes the groove bar described in embodiment 1, and the silicon boat further includes... A top plate and a flange, wherein the top plate and the flange are spaced apart along a first direction, and a first center line is provided through the top plate and the flange; A first symmetry plane, which extends along the first direction; A first groove bar assembly and a second groove bar assembly are provided. The first groove bar assembly consists of two groove bars in a first structural state, and the second groove bar assembly consists of two groove bars in a second structural state. The two ends of the first groove bar assembly and the second groove bar assembly are respectively connected to the top plate and the flange along the first direction. The two groove bars in the first groove bar assembly are symmetrically arranged with the first symmetry plane as the center, and the two groove bars in the second groove bar assembly are symmetrically arranged with the first symmetry plane as the center.

[0012] A third aspect of this application provides a method for processing a grooved bar, wherein the method is applied to the grooved bar described in Example 1, and the method for processing the grooved bar includes the following steps. Contact groove cutting: The grooved bar is arranged on the first fixture along the first direction, and the first forming tool is used to cut on the grooved bar to form a plurality of contact grooves arranged at intervals along the first direction, and to form the first contact surface, the second contact surface and the first connecting surface. The second contact surface is in contact with the first connecting surface. The first connecting surface has an arc-shaped structure, and the grooved bar is in the first structural state. First contact line chamfering: The grooved bar in the first structural state is arranged on the second fixture along the first direction. At this time, the first contact line of the grooved bar in the first structural state is set upward, and the first contact line is chamfered using a chamfering tool. The second contact line is chamfered. The grooved bar in the first structural state is arranged on the third fixture along the first direction. At this time, the second contact line of the grooved bar in the first structural state is set upward. The second contact line along the third direction is chamfered sequentially using a chamfering tool.

[0013] The fourth aspect of this application provides a method for processing a grooved bar, wherein the method is applied to the grooved bar described in Example 1, and the method for processing the grooved bar includes the following steps; Contact groove cutting: The grooved bar is arranged on the fourth fixture along the first direction, and the first cutting tool is used to cut on the grooved bar to form a plurality of contact grooves that are spaced apart sequentially along the first direction, and to form the first connecting surface; The second contact surface is cut by arranging the grooved bar on the fifth fixture along the first direction and further cutting it in the contact groove with the second forming blade to form the first contact surface and the second contact surface, which are spaced apart from the first connecting surface. The second contact surface is an arc-shaped structure, and the grooved bar is in a second structural state. First contact line chamfering: The grooved bar in the second structural state is arranged on the sixth fixture along the first direction. At this time, the first contact line of the grooved bar in the second structural state is set upwards, and the first contact line is chamfered using a chamfering tool. The second contact line is chamfered. The grooved bar in the second structural state is arranged on the seventh fixture along the first direction. At this time, the second contact line of the grooved bar in the second structural state is set upward. The second contact line along the third direction is chamfered sequentially using a chamfering tool.

[0014] Compared with the prior art, the present application has a plurality of contact grooves for supporting wafers spaced apart along the first direction. The contact grooves have a first opening and penetrate the groove along the third direction, which can smoothly realize the placement, removal and alignment of wafers. At the same time, it matches the first center line corresponding to the center of the wafer to complete precise positioning, ensuring the coaxiality and installation accuracy of the wafer placement, and avoiding the problem of uneven force caused by wafer alignment misalignment. Compared to traditional vertical flat-bottomed trench structures, this application features an extended first contact surface at the bottom of the contact trench to provide stable support for the wafer bottom, ensuring stable placement of the wafer in a static state. Simultaneously, a second contact surface is provided at the end of the first contact surface furthest from the first opening, forming a first angle of less than 90° between the first and second contact surfaces, thus creating an inclined trench bottom limiting structure. When the wafer experiences slight deflection or tilting due to factors such as high-temperature airflow, equipment transmission, or thermal deformation, the wafer edge will not collide vertically with the rigid vertical trench bottom. Instead, it will smoothly abut against the inclined second contact surface, self-adaptively limiting the movement and effectively releasing the squeezing and impact forces generated by the wafer deflection. Meanwhile, this application incorporates a first transition arc between the first and second contact surfaces to facilitate a seamless transition, completely eliminating the right-angled edges of traditional trench bottoms. This prevents scratches and chipping caused by point or line contact between the wafer and structural edges during wafer deflection, transforming the hard collision between the wafer and the trench into a flexible, conforming contact. This structural design effectively accommodates small deflections and displacements during wafer processing, preventing mechanical damage to the wafer edges and bottom throughout the process. It ensures the integrity of the wafer structure and surface flatness, thereby guaranteeing the uniformity of high-temperature processes such as semiconductor diffusion, oxidation, and vapor deposition. This significantly improves wafer processing yield and product reliability, reduces production scrap costs, and ensures the continuity and stability of mass production processes. Attached Figure Description

[0015] Appendix Figure 1 This is a schematic diagram of one structure of the groove bar in the first structural state of this application; Appendix Figure 2 This is a schematic diagram of another structure of the groove bar in the first structural state of this application; Appendix Figure 3 This is a cross-sectional view of the groove bar in the first structural state of this application; Appendix Figure 4 This is a schematic diagram of one structure of the groove bar in the second structural state of this application; Appendix Figure 5 This is a schematic diagram of another structure of the groove bar in the second structural state of this application; Appendix Figure 6 This is a cross-sectional view of the groove bar in the second structural state of this application; Appendix Figure 7 This is a schematic diagram of one structure of the silicon boat of this application; Appendix Figure 8 This is a schematic diagram of a method for machining a grooved bar in the first structural state of this application. Appendix Figure 9 This is a schematic diagram of a method for machining a grooved bar in the second structural state of this application. Appendix Figure 10 This is another structural schematic diagram of the groove bar processing method in the second structural state of this application; Appendix Figure 11 This is a schematic diagram of a method for machining a grooved bar in the first and second structural states of this application. Appendix Figure 12 This is another structural schematic diagram of the groove bar processing method in the first and second structural states of this application.

[0016] Explanation of the labels in the diagram: X, first direction; Y, second direction; Z, third direction; 10. Silicon boat; 100. Groove bar; 110. First center line; 120. Contact groove; 121. First opening; 122. First contact surface; 123. Second contact surface; 124. First transition arc; 125. First connecting surface; 126. Second transition arc; 127. First intersecting line; 128. Second intersecting line; 130. Contact line; 131. First contact line; 132. Second contact line; 200. Top plate; 300. Flange; 400. First plane of symmetry; 500. First groove bar assembly; 600, Second groove bar assembly; 710. First clamp; 720. Second clamp; 730. Third clamp; 740. Fourth clamp; 750. Fifth clamp; 760. Sixth clamp; 770. Seventh clamp; 810. First forming tool; 830. First cutting tool; 840. Second forming tool; 20. Wafer. Detailed Implementation

[0017] To make the objectives, features, and advantages of this application more apparent and understandable, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0018] The existing technology has the technical problem that the vertical bottom of the trench in the groove bar will have a large area of ​​hard contact, friction, or even compression with the wafer.

[0019] Therefore, a first aspect of this application provides a trench bar, wherein the trench bar is used to place a wafer, and a first center line is provided on one side of the trench bar along a first direction, the first center line coinciding with the center of the wafer, the trench bar comprising... The groove has a plurality of contact grooves spaced apart along a first direction inside the groove bar. One end of the contact groove along a second direction has a first opening, and the contact groove penetrates the groove bar along a third direction. The first contact surface is provided at the bottom of the contact groove along the first direction, the first contact surface abuts against the bottom of the wafer, the first contact surface extends along the second direction, and the first contact surface is connected to the first opening; The second contact surface is provided at the end of the first contact surface along the second direction and away from the first opening. The second contact surface and the first contact surface form a first included angle, which is less than 90°. The first contact surface and the second contact surface are connected by a first transition arc.

[0020] A second aspect of this application provides a silicon boat, wherein the silicon boat includes the grooved rod described in Embodiment 1, and the silicon boat further includes... A top plate and a flange, wherein the top plate and the flange are spaced apart along a first direction, and a first center line is provided through the top plate and the flange; A first symmetry plane, which extends along the first direction; A first groove bar assembly and a second groove bar assembly are provided. The first groove bar assembly consists of two groove bars in a first structural state, and the second groove bar assembly consists of two groove bars in a second structural state. The two ends of the first groove bar assembly and the second groove bar assembly are respectively connected to the top plate and the flange along the first direction. The two groove bars in the first groove bar assembly are symmetrically arranged with the first symmetry plane as the center, and the two groove bars in the second groove bar assembly are symmetrically arranged with the first symmetry plane as the center.

[0021] A third aspect of this application provides a method for processing a grooved bar, wherein the method is applied to the grooved bar described in Example 1, and the method for processing the grooved bar includes the following steps. Contact groove cutting: The grooved bar is arranged on the first fixture along the first direction, and the first forming tool is used to cut on the grooved bar to form a plurality of contact grooves arranged at intervals along the first direction, and to form the first contact surface, the second contact surface and the first connecting surface. The second contact surface is in contact with the first connecting surface. The first connecting surface has an arc-shaped structure, and the grooved bar is in the first structural state. First contact line chamfering: The grooved bar in the first structural state is arranged on the second fixture along the first direction. At this time, the first contact line of the grooved bar in the first structural state is set upward, and the first contact line is chamfered using a chamfering tool. The second contact line is chamfered. The grooved bar in the first structural state is arranged on the third fixture along the first direction. At this time, the second contact line of the grooved bar in the first structural state is set upward. The second contact line along the third direction is chamfered sequentially using a chamfering tool.

[0022] The fourth aspect of this application provides a method for processing a grooved bar, wherein the method is applied to the grooved bar described in Example 1, and the method for processing the grooved bar includes the following steps; Contact groove cutting: The grooved bar is arranged on the fourth fixture along the first direction, and the first cutting tool is used to cut on the grooved bar to form a plurality of contact grooves that are spaced apart sequentially along the first direction, and to form the first connecting surface; The second contact surface is cut by arranging the grooved bar on the fifth fixture along the first direction and further cutting it in the contact groove with the second forming blade to form the first contact surface and the second contact surface, which are spaced apart from the first connecting surface. The second contact surface is an arc-shaped structure, and the grooved bar is in a second structural state. First contact line chamfering: The grooved bar in the second structural state is arranged on the sixth fixture along the first direction. At this time, the first contact line of the grooved bar in the second structural state is set upwards, and the first contact line is chamfered using a chamfering tool. The second contact line is chamfered. The grooved bar in the second structural state is arranged on the seventh fixture along the first direction. At this time, the second contact line of the grooved bar in the second structural state is set upward. The second contact line along the third direction is chamfered sequentially using a chamfering tool.

[0023] Example 1: Silicon boats are core support tools in semiconductor manufacturing. They are mainly used to support and position wafers in high-temperature processes (such as diffusion, oxidation, and vapor deposition) to prevent silicon wafers from being contaminated, damaged, or displaced during processing, thus ensuring process uniformity and wafer quality.

[0024] In existing technologies, conventional silicon boats are mainly composed of a top plate, flanges, and multiple groove bars. Among them, the groove bars are the core load-bearing components of the silicon boat, directly undertaking the functions of supporting and limiting the wafers. Specifically, the groove bars have several grooves spaced along their length for clamping and supporting the wafers. Through the corresponding cooperation of the grooves on both sides of the groove bars, multiple wafers can be stably placed in a layered and spaced manner to meet the production needs of batch wafer synchronous processing. Currently, the mainstream trenches in the industry adopt a straight groove structure, and the bottom of the trenches all adopt a vertical plane structure. In the actual production and processing, the wafer will inevitably experience slight deflection, shaking, or small displacement due to factors such as equipment transmission and high-temperature airflow disturbance. When the wafer deflects or tilts, the edge of the wafer is very likely to have large-area hard contact, friction, or even compression with the vertical bottom of the trench. Because semiconductor wafer substrates have low hardness, thinness, and extremely high precision requirements, the aforementioned hard contact can directly cause mechanical damage such as chipping, scratches, and microcracks at the wafer edges. This not only results in the direct scrapping of the wafer and a significant increase in production costs, but also causes uneven subsequent high-temperature processing due to wafer surface damage and stress deformation, leading to problems such as abnormal wafer electrical performance and deviations in process parameters.

[0025] Please refer to the attached document. Figure 1 To be continued Figure 6 As shown, in this embodiment, the first direction X refers to the height direction of the groove rod 100, that is, the direction of the groove rod 100 from top to bottom or from bottom to top. The second direction Y refers to the length direction of the groove rod 100, that is, the direction of the groove rod 100 from left to right or from right to left. The third direction Z refers to the width direction of the groove rod 100, that is, the direction of the groove rod 100 from front to back or from back to front.

[0026] In this embodiment, the groove bar 100 is divided into a first structural state and a second structural state depending on its placement relative to the top plate 200 and the flange 300. The groove bar 100 in the second structural state is longer in the second direction Y than the groove bar 100 in the first structural state. The first structural state groove bar 100 and the second structural state groove bar 100 will now be described separately.

[0027] Appendix Figure 1 This is a schematic diagram of one structure of the groove rod 100 in the first structural state of this application, attached. Figure 2This is a schematic diagram of another structure of the groove rod 100 in the first structural state of this application, attached. Figure 3 This is a cross-sectional view of the groove bar 100 in the first structural state of this application. Please refer to the attached diagram. Figure 1 and appendix Figure 2 As shown, this application discloses a trench bar 100, which is a trench bar 100 in a first structural state. In this embodiment, the trench bar 100 is an elongated structure extending along a first direction X. The trench bars 100 are spaced apart around a first center line 110 in the silicon boat 10. The first center line 110 extends along the first direction X and coincides with the center of the wafer 20. The first center line 110 is a hypothetical line, and its arrangement is only for further description of the specific structure of the trench bar 100 or the silicon boat 10.

[0028] Please refer to the attached document. Figure 1 and appendix Figure 2 As shown, the trench bar 100 of this application includes a contact groove 120. A plurality of contact grooves 120 are provided at intervals along the first direction X in the trench bar 100. The contact groove 120 has a first opening 121 along the second direction Y, and the contact groove 120 penetrates the trench bar 100 along the third direction Z, so as to facilitate the wafer 20 to enter the contact groove 120 from the first opening 121. The setting of the contact groove 120 can smoothly realize the picking and placing of the wafer 20.

[0029] Please refer to the attached document. Figure 1 and appendix Figure 2 As shown, the groove bar 100 of this application also includes a first contact surface 122. The first contact surface 122 is located at the bottom of the contact groove 120 along the first direction X. The first contact surface 122 abuts against the bottom of the wafer 20, thereby realizing the support of the wafer 20. The first contact surface 122 extends along the second direction Y and is connected to the first opening 121.

[0030] Please refer to the attached document. Figure 1 and appendix Figure 2 As shown, the groove bar 100 of this application also includes a second contact surface 123. The first contact surface 122 is provided at one end along the second direction Y and away from the first opening 121. The second contact surface 123 and the first contact surface 122 form a first included angle, which is less than 90 degrees. The first contact surface 122 and the second contact surface 123 are connected by a first transition arc 124.

[0031] Compared to traditional vertical flat-bottomed trench structures, the contact groove 120 of this application features an extended first contact surface 122 at its bottom to provide stable support for the bottom of the wafer 20, ensuring stable placement of the wafer 20 in a static state. Simultaneously, a second contact surface 123 is provided at the end of the first contact surface 122 furthest from the first opening 121, forming a first angle of less than 90° between the first and second contact surfaces 122, thus creating an inclined groove bottom limiting structure. When the wafer 20 experiences slight deflection or tilting due to factors such as high-temperature airflow, equipment transmission, or thermal deformation, the edge of the wafer 20 will not collide vertically with the rigid vertical groove bottom. Instead, it will smoothly abut against the inclined second contact surface 123, self-adaptively limiting its position and effectively releasing the squeezing and impact forces generated by the wafer 20's deflection. Meanwhile, this application provides a first transition arc 124 between the first contact surface 122 and the second contact surface 123 for seamless transition, completely eliminating the right-angled edge structure at the bottom of the traditional trench. This prevents scratches and edge chipping caused by point or line contact between the wafer 20 and the structural edges during deflection, transforming the hard collision between the wafer 20 and the trench into a flexible, close contact. This structural design can effectively adapt to small deflections and displacements during wafer 20 processing, avoiding mechanical damage to the edges and bottom of the wafer 20 throughout the process, ensuring the structural integrity and surface flatness of the wafer 20, thereby guaranteeing the uniformity of high-temperature processes such as semiconductor diffusion, oxidation, and vapor deposition, significantly improving wafer 20 processing yield and product reliability, reducing production scrap costs, and ensuring the continuity and stability of mass production processes.

[0032] Please refer to the attached document. Figure 1 To be continued Figure 3 As shown, in this embodiment, the bottom of the contact groove 120 along the second direction Y has a first connecting surface 125. The first connecting surface 125 is the bottom of the contact groove 120. In this embodiment, the second contact surface 123 is connected to the first connecting surface 125 to form the first structural state of the groove rod 100.

[0033] In one embodiment, the second contact surface 123 and the first connecting surface 125 are connected by a second transition arc 126.

[0034] In one embodiment, the first connecting surface 125 has an arc-shaped structure. In actual use, the first connecting surface 125 is arranged circumferentially around the wafer 20. The first connecting surface 125 and the horizontal cross section in the first direction X form a first intersection line 127. Several horizontal cross sections are arranged at intervals in the first direction X, so there are multiple first intersection lines 127 in this embodiment. When the wafer 20 is supported in the contact groove 120 and the center of the wafer 20 coincides with the first center line 110, the distance between each point on the first intersection line 127 and the sidewall of the wafer 20 remains consistent. The existing flat bottom of the tank causes the gap between the tank body and the sidewall of wafer 20 to be narrow in the middle and wide at both ends. When the circulating airflow in the high-temperature process cavity flows through the gap, the airflow velocity and pressure at different positions are significantly different. The uneven pressure continuously acts on the sidewall of wafer 20, continuously pushing wafer 20 to shift and deflect. In this solution, the distance between the positions on the multiple first intersection lines 127 and the sidewall of wafer 20 is uniform, and the airflow gaps around wafer 20 are equal. The air pressure generated by the airflow through the gap is completely balanced in magnitude and direction of force, eliminating the unilateral pressure difference from the source of airflow disturbance and preventing the airflow force from inducing wafer 20 to shake and tilt.

[0035] Please refer to the attached document. Figure 1 As shown, in this embodiment, a contact line 130 is formed between the contact groove 120 and the groove bar 100. The contact line 130 is formed on the outer surface of the contact groove 120, and a rounded chamfer is formed at the contact line 130. The contact line 130 includes a first contact line 131 and a second contact line 132. The first contact line 131 is located at one end of the contact groove 120 along the second direction Y and is disposed near the first opening 121. The second contact line 132 is located at both ends of the contact groove 120 along the third direction Z.

[0036] Appendix Figure 4 This is a schematic diagram of one structure of the groove rod 100 in the second structural state of this application, attached. Figure 5 This is a schematic diagram of another structure of the groove rod 100 in the second structural state of this application, attached. Figure 6 This is a cross-sectional view of the groove bar 100 in the second structural state of this application. Please refer to the attached diagram. Figure 4 and appendix Figure 5 As shown, this application discloses a trench bar 100, which is a trench bar 100 in a first structural state. In this embodiment, the trench bar 100 is an elongated structure extending along a first direction X. The trench bars 100 are spaced apart around a first center line 110 in the silicon boat 10. The first center line 110 extends along the first direction X and coincides with the center of the wafer 20. The first center line 110 is a hypothetical line, and its arrangement is only for further description of the specific structure of the trench bar 100 or the silicon boat 10.

[0037] Please refer to the attached document. Figure 4 and appendix Figure 5As shown, the trench bar 100 of this application includes a contact groove 120. A plurality of contact grooves 120 are provided at intervals along the first direction X in the trench bar 100. The contact groove 120 has a first opening 121 along the second direction Y, and the contact groove 120 penetrates the trench bar 100 along the third direction Z, so as to facilitate the wafer 20 to enter the contact groove 120 from the first opening 121. The setting of the contact groove 120 can smoothly realize the picking and placing of the wafer 20.

[0038] Please refer to the attached document. Figure 4 and appendix Figure 5 As shown, the groove bar 100 of this application also includes a first contact surface 122. The first contact surface 122 is located at the bottom of the contact groove 120 along the first direction X. The first contact surface 122 abuts against the bottom of the wafer 20, thereby realizing the support of the wafer 20. The first contact surface 122 extends along the second direction Y and is connected to the first opening 121.

[0039] Please refer to the attached document. Figure 4 and appendix Figure 5 As shown, the groove bar 100 of this application also includes a second contact surface 123. The first contact surface 122 is provided at one end along the second direction Y and away from the first opening 121. The second contact surface 123 and the first contact surface 122 form a first included angle, which is less than 90 degrees. The first contact surface 122 and the second contact surface 123 are connected by a first transition arc 124.

[0040] Compared to traditional vertical flat-bottomed trench structures, the contact groove 120 of this application features an extended first contact surface 122 at its bottom to provide stable support for the bottom of the wafer 20, ensuring stable placement of the wafer 20 in a static state. Simultaneously, a second contact surface 123 is provided at the end of the first contact surface 122 furthest from the first opening 121, forming a first angle of less than 90° between the first and second contact surfaces 122, thus creating an inclined groove bottom limiting structure. When the wafer 20 experiences slight deflection or tilting due to factors such as high-temperature airflow, equipment transmission, or thermal deformation, the edge of the wafer 20 will not collide vertically with the rigid vertical groove bottom. Instead, it will smoothly abut against the inclined second contact surface 123, self-adaptively limiting its position and effectively releasing the squeezing and impact forces generated by the wafer 20's deflection. Meanwhile, this application provides a first transition arc 124 between the first contact surface 122 and the second contact surface 123 for seamless transition, completely eliminating the right-angled edge structure at the bottom of the traditional trench. This prevents scratches and edge chipping caused by point or line contact between the wafer 20 and the structural edges during deflection, transforming the hard collision between the wafer 20 and the trench into a flexible, close contact. This structural design can effectively adapt to small deflections and displacements during wafer 20 processing, avoiding mechanical damage to the edges and bottom of the wafer 20 throughout the process, ensuring the structural integrity and surface flatness of the wafer 20, thereby guaranteeing the uniformity of high-temperature processes such as semiconductor diffusion, oxidation, and vapor deposition, significantly improving wafer 20 processing yield and product reliability, reducing production scrap costs, and ensuring the continuity and stability of mass production processes.

[0041] Please refer to the attached document. Figure 4 and appendix Figure 6 As shown, in this embodiment, the bottom of the contact groove 120 along the second direction Y has a first connecting surface 125, and the second contact surface 123 is spaced apart from the first connecting surface 125 to form the second structural state of the groove bar 100.

[0042] In one embodiment, the second contact surface 123 has an arc-shaped structure. In actual use, the second contact surface 123 is arranged circumferentially around the wafer 20. The second contact surface 123 and the horizontal cross section in the first direction X form a second intersection line 128. Several horizontal cross sections are arranged at intervals in the first direction X. Therefore, there are also multiple first intersection lines 127 in this embodiment. When the wafer 20 is supported in the contact groove 120 and the center of the wafer 20 coincides with the first center line 110, the distance between each point on the second intersection line 128 and the sidewall of the wafer 20 remains consistent. The existing flat bottom of the tank results in a narrow gap between the tank body and the sidewall of wafer 20, which is wide at both ends. When the circulating airflow in the high-temperature process cavity flows through the gap, the airflow velocity and pressure at different positions are significantly different. The uneven pressure continuously acts on the sidewall of wafer 20, continuously pushing wafer 20 to shift and deflect. In this solution, the distance between the positions on the multiple second intersection lines 128 and the sidewall of wafer 20 is uniform, and the airflow gaps around wafer 20 are equal. The air pressure generated by the airflow through the gap is completely balanced in magnitude and direction of force, eliminating the unilateral pressure difference from the source of airflow disturbance and preventing the airflow force from inducing wafer 20 to shake or tilt.

[0043] Please refer to the attached document. Figure 6 As shown, in this embodiment, a contact line 130 is formed between the contact groove 120 and the groove bar 100. The contact line 130 is formed on the outer surface of the contact groove 120, and a rounded chamfer is formed at the contact line 130. The contact line 130 includes a first contact line 131 and a second contact line 132. The first contact line 131 is located at one end of the contact groove 120 along the second direction Y and is disposed near the first opening 121. The second contact line 132 is located at both ends of the contact groove 120 along the third direction Z.

[0044] Example 2: Appendix Figure 7 This is a schematic diagram of one structure of the silicon boat 10 of this application. Please refer to the attached diagram. Figure 7 As shown, the silicon boat 10 in this embodiment includes the groove bar 100 in embodiment 1. For the specific structure of the groove bar 100 in embodiment 1, please refer to the description in embodiment 1. It will not be described further in this embodiment.

[0045] Please refer to the attached document. Figure 7 As shown, the silicon boat 10 of this embodiment includes a top plate 200 and a flange 300. The top plate 200 and the flange 300 are spaced apart along the first direction X. The top plate 200 is located at the top of the silicon boat 10, and the flange 300 is located at the bottom of the silicon boat 101. The silicon boat 10 is connected to other components through the flange 300.

[0046] In one embodiment, the top plate 200 and the flange 300 are arranged in parallel. Furthermore, both the top plate 200 and the flange 300 are circular structures, and the projection of the center of the top plate 200 along the first direction X onto the flange 300 coincides with the center of the flange 300.

[0047] Please refer to the attached document. Figure 7 As shown, the silicon boat 10 in this embodiment further includes a first centerline 110, which is disposed along a first direction X and penetrates the top plate 200 and the flange 300. Furthermore, the first centerline 110 coincides with the center of the top plate 200 and the flange 300. When the silicon boat 10 in this embodiment is used to support the wafer 20, the center of the wafer 20 is concentrated on the first centerline 110.

[0048] Please refer to the attached document. Figure 7 As shown, the silicon boat 10 in this embodiment also includes a first symmetry plane 400. The first symmetry plane 400 extends along the first direction X and is connected to the top plate 200 and the flange 300. The first symmetry plane 400 is a virtual plane. The setting of the first symmetry plane 400 is to further explain the setting method of the first groove bar assembly 500 and the second groove bar assembly 600 in the silicon boat 10.

[0049] Please refer to the attached document. Figure 7 As shown, the silicon boat 10 in this embodiment further includes a first groove rod assembly 500 and a second groove rod assembly 600. Two groove rods 100 in a first structural state form the first groove rod assembly 500, and two groove rods 100 in a second structural state form the second groove rod assembly 600. The two ends of the first groove rod assembly 500 and the second groove rod assembly 600 along the first direction X are respectively connected to the top plate 200 and the flange 300. The two groove rods 100 in the first groove rod assembly 500 are symmetrically arranged with a first symmetry plane 400 as the center, and the two groove rods 100 in the second groove rod assembly 600 are symmetrically arranged with the first symmetry plane 400 as the center.

[0050] Furthermore, the groove rod 100 in the first groove rod assembly 500 and the groove rod 100 in the second groove rod assembly 600 are inclined in the same direction relative to the first symmetry plane 400. Therefore, the lengths of the groove rod 100 in the first groove rod assembly 500 and the groove rod 100 in the second groove rod assembly 600 in the second direction Y will be different. Further, the length of the groove rod 100 in the second groove rod assembly 600 in the second direction Y is longer than the length of the groove rod in the first groove rod assembly 500 in the second direction Y.

[0051] Example 3: This embodiment discloses a method for processing a grooved rod 100. The processing method of the grooved rod 100 in this embodiment is applied to the grooved rod 100 in Embodiment 1. The processing methods of the grooved rod 100 in the first structural state and the processing methods of the grooved rod 100 in the second structural state are described below.

[0052] Appendix Figure 8 This is a schematic diagram of a processing method for the grooved bar 100 in the first structural state of this application. Figure 11 This is a schematic diagram of a machining method for the grooved bar 100 in the first and second structural states of this application, attached. Figure 12 This is another structural schematic diagram of the method for machining the grooved rod 100 in the first and second structural states of this application. Please refer to the attached diagram. Figure 8 Appendix Figure 11 and appendix Figure 12 As shown, the processing method of the grooved bar 100 in this embodiment includes, The first step is to cut the contact grooves 120. The grooved rod 100 is arranged on the first fixture 710 along the first direction X. Paraffin wax is used to bond both sides of the grooved rod 100 to the fixture, and the grooved rod 100 is finally fixed by the anti-sliding block of the fixture. The first forming tool 810 is used to cut on the grooved rod 100 to form a plurality of contact grooves 120 arranged sequentially at intervals along the first direction X, forming a first contact surface 122, a second contact surface 123, and a first connecting surface 125. The second contact surface 123 is in contact with the first connecting surface 125. The first connecting surface 125 has an arc-shaped structure, and the grooved rod 100 is in the first structural state. In order to form the first contact surface 122, the second contact surface 123, and the first connecting surface 125 in one step, the first forming tool 810 is set, so that the above structure can be completed in one cut.

[0053] The second step is to chamfer the first contact line 131. The grooved bar 100 in the first structural state is arranged on the second fixture 720 along the first direction X. Paraffin wax is used to bond both sides of the grooved bar 100 to the fixture, and the grooved bar 100 is finally fixed by the anti-sliding block of the fixture. At this time, the first contact line 131 of the grooved bar 100 in the first structural state is set upward. The first contact line 131 is chamfered by a chamfering tool. The third step is to chamfer the second contact line 132. The grooved rod 100 in the first structural state is arranged on the third fixture 730 along the first direction X. Paraffin wax is used to bond both sides of the grooved rod 100 to the fixture, and the grooved rod 100 is finally fixed by the anti-sliding block of the fixture. At this time, the second contact line 132 of the grooved rod 100 in the first structural state is set upward. The second contact line 132 along the third direction Z side of the grooved rod 100 is chamfered using a chamfering tool. After turning the grooved rod 100, the grooved rod 100 is further clamped on the third fixture 730, and the second contact line 132 along the third direction Z side of the grooved rod 100 is chamfered using a chamfering tool.

[0054] Appendix Figure 9 This is a schematic diagram of a processing method for the grooved rod 100 in the second structural state of this application, attached. Figure 10 This is a schematic diagram of another structural method for processing the grooved bar 100 in the second structural state of this application, attached. Figure 11 This is a schematic diagram of a machining method for the grooved bar 100 in the first and second structural states of this application, attached. Figure 12 This is another structural schematic diagram of the method for machining the grooved rod 100 in the first and second structural states of this application. Please refer to the attached diagram. Figure 9 To be continued Figure 12 As shown, the processing method of the grooved bar 100 in this embodiment includes, The first step is to cut the contact groove 120. The groove bar 100 is arranged on the fourth fixture 740 along the first direction X. Paraffin wax is used to bond both sides of the groove bar 100 to the fixture. The groove bar 100 is finally fixed by the anti-sliding block of the fixture. The first cutting tool 830 is used to cut on the groove bar 100 to form a number of contact grooves 120 arranged sequentially and spaced along the first direction X, and to form the first connecting surface 125.

[0055] The second step is to cut the second contact surface 123. The grooved bar 100 is arranged on the fifth fixture 750 along the first direction X. Paraffin wax is used to bond both sides of the grooved bar 100 to the fixture, and the grooved bar 100 is finally fixed by the anti-sliding block of the fixture. The second forming cutter is used to further cut in the contact groove 120 to form the first contact surface 122 and the second contact surface 123, which are spaced apart from the first connecting surface 125. The second contact surface 123 has an arc-shaped structure, and the grooved bar 100 is in the second structural state. In order to form the first contact surface 122 and the second contact surface 123 at one time, the second forming cutter 840 is set so that the above structure can be completed after one cut.

[0056] The third step is to chamfer the first contact line 131. The groove bar 100 in the second structural state is arranged on the sixth fixture 760 along the first direction X. At this time, the first contact line 131 of the groove bar 100 in the second structural state is set upward. The first contact line 131 is chamfered using a chamfering tool. The fourth step is to chamfer the second contact line 132. The grooved bar 100 in the second structural state is arranged on the seventh fixture 770 along the first direction X. At this time, the second contact line 132 of the grooved bar 100 in the second structural state is set upward. The second contact line 132 along the third direction Z of the grooved bar 100 is chamfered in sequence using a chamfering tool. After turning the grooved bar 100, the grooved bar 100 is further clamped on the seventh fixture 770, and the second contact line 132 along the third direction Z of the grooved bar 100 is chamfered using a chamfering tool.

[0057] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of those different embodiments or examples.

[0058] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "a plurality of" means two or more, unless otherwise explicitly specified.

[0059] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A grooved bar, characterized in that, The trench bar is used to place the wafer. A first center line is provided on one side of the trench bar along a first direction, and the first center line coincides with the center of the wafer. The trench bar includes... The groove has a plurality of contact grooves spaced apart along a first direction inside the groove bar. One end of the contact groove along a second direction has a first opening, and the contact groove penetrates the groove bar along a third direction. The first contact surface is provided at the bottom of the contact groove along the first direction, the first contact surface abuts against the bottom of the wafer, the first contact surface extends along the second direction, and the first contact surface is connected to the first opening; The second contact surface is provided at the end of the first contact surface along the second direction and away from the first opening. The second contact surface and the first contact surface form a first included angle, which is less than 90°. The first contact surface and the second contact surface are connected by a first transition arc.

2. The grooved rod according to claim 1, characterized in that, A contact line is formed between the contact groove and the groove bar. The contact line is formed on the outer surface of the contact groove and has a rounded chamfer. The contact line includes a first contact line and a second contact line. The first contact line is located at one end of the contact groove along the second direction and is located close to the first opening. The second contact line is located at both ends of the contact groove along the third direction.

3. The grooved bar according to claim 2, characterized in that, The bottom of the contact groove along the second direction has a first connecting surface, and the second contact surface is in contact with the first connecting surface to form the first structural state of the groove bar.

4. The grooved bar according to claim 3, characterized in that, The second contact surface is connected to the first connecting surface by a second transition arc.

5. The grooved bar according to claim 2, characterized in that, The bottom of the contact groove along the second direction has a first connecting surface, and the second contact surface is spaced apart from the first connecting surface to form the second structural state of the groove bar.

6. The grooved bar according to claim 3, characterized in that, The first connecting surface is an arc-shaped structure, and the first connecting surface and the horizontal cross-section in the first direction form a first intersection line. When the center of the wafer coincides with the first center line, the shortest distance between each point on the first intersection line and the sidewall of the wafer remains consistent.

7. The grooved bar according to claim 5, characterized in that, The second contact surface has an arc-shaped structure, and the second contact surface forms a second intersection line with the horizontal cross-section in the first direction. When the center of the wafer coincides with the first center line, the shortest distance between each point on the second intersection line and the sidewall of the wafer remains consistent.

8. A silicon boat, characterized in that, The silicon boat includes the grooved rod according to any one of claims 1 to 7, and the silicon boat further includes... A top plate and a flange, wherein the top plate and the flange are spaced apart along a first direction, and a first center line is provided through the top plate and the flange; A first symmetry plane, which extends along the first direction; A first groove bar assembly and a second groove bar assembly are provided. The first groove bar assembly consists of two groove bars in a first structural state, and the second groove bar assembly consists of two groove bars in a second structural state. The two ends of the first groove bar assembly and the second groove bar assembly are respectively connected to the top plate and the flange along the first direction. The two groove bars in the first groove bar assembly are symmetrically arranged with the first symmetry plane as the center, and the two groove bars in the second groove bar assembly are symmetrically arranged with the first symmetry plane as the center.

9. A method for processing a grooved bar, characterized in that, The method for processing the grooved bar according to claim 6 includes the following steps: Contact groove cutting: The grooved bar is arranged on the first fixture along the first direction, and the first forming tool is used to cut on the grooved bar to form a plurality of contact grooves arranged at intervals along the first direction, and to form the first contact surface, the second contact surface and the first connecting surface. The second contact surface is in contact with the first connecting surface. The first connecting surface has an arc-shaped structure, and the grooved bar is in the first structural state. First contact line chamfering: The grooved bar in the first structural state is arranged on the second fixture along the first direction. At this time, the first contact line of the grooved bar in the first structural state is set upward, and the first contact line is chamfered using a chamfering tool. The second contact line is chamfered. The grooved bar in the first structural state is arranged on the third fixture along the first direction. At this time, the second contact line of the grooved bar in the first structural state is set upward. The second contact line along the third direction is chamfered sequentially using a chamfering tool.

10. A method for processing a grooved bar, characterized in that, The method for processing the grooved bar according to claim 7 includes the following steps; Contact groove cutting: The grooved bar is arranged on the fourth fixture along the first direction, and the first cutting tool is used to cut on the grooved bar to form a plurality of contact grooves that are spaced apart sequentially along the first direction, and to form the first connecting surface; The second contact surface is cut by arranging the grooved bar on the fifth fixture along the first direction and further cutting it in the contact groove with the second forming blade to form the first contact surface and the second contact surface, which are spaced apart from the first connecting surface. The second contact surface is an arc-shaped structure, and the grooved bar is in a second structural state. First contact line chamfering: The grooved bar in the second structural state is arranged on the sixth fixture along the first direction. At this time, the first contact line of the grooved bar in the second structural state is set upwards, and the first contact line is chamfered using a chamfering tool. The second contact line is chamfered. The grooved bar in the second structural state is arranged on the seventh fixture along the first direction. At this time, the second contact line of the grooved bar in the second structural state is set upward. The second contact line along the third direction is chamfered sequentially using a chamfering tool.

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