Lift pin, method for manufacturing lift pin, and wafer processing apparatus

Abstract

The present disclosure provides a lift pin, a manufacturing method of the lift pin and a wafer processing device, and relates to the field of wafer processing devices. The lift pin comprises a lift pin body, the lift pin body comprises a first section and a second section connected in an axial direction, the first section is used for supporting a wafer, and the second section is used for cooperating with a base; a plurality of recessed parts arranged on the first section, the recessed parts are located at least on a top surface of the first section, and the recessed parts are used for accommodating contaminant particles; and a plurality of convex rib structures arranged on an outer side surface of the second section, the extension direction of the convex rib structures is parallel to the axial direction of the second section, and the convex rib structures are used for cooperating with the base. The recessed parts on the first section can form a space for accommodating contaminant particles and reduce the contact area between the lift pin body and the wafer, and the convex rib structures on the second section can reduce the contact area between the lift pin body and the base, thereby reducing the contaminant particles generated due to friction between the lift pin body and the base.

Description

Technical Field

[0001] This disclosure relates to the field of wafer processing equipment, and more particularly to a lifting pin, a method for manufacturing the lifting pin, and wafer processing equipment. Background Technology

[0002] Lifting pins are key support components in wafer transport and positioning systems. During semiconductor wafer manufacturing, three or more through holes are typically made in the substrate (such as electrostatic chucks, heater disks, substrate rings, etc.). Lifting pins pass through these through holes and move axially under the drive of a drive device (such as cylinders, servo cylinders, ball screw mechanisms, etc.), thereby lifting the wafer from or placing it onto the substrate.

[0003] During the process of lifting the wafer using lift pins, the top of the lift pins needs to be in direct contact with the back side of the wafer. On one hand, the contact, separation, and relative micro-movement between the lift pins and the wafer can easily generate tiny debris (such as microparticles of the wafer's back oxide layer, thin film material, or the lift pins themselves). These debris, as contaminant particles, remain on the top surface of the lift pins or the back side of the wafer, causing particle defects on the wafer surface in subsequent processes and affecting chip yield. Especially in advanced processes, particles larger than 0.1 μm can lead to device failure; therefore, the control of particle contamination is extremely stringent.

[0004] To reduce particle generation, the current common practice is to design the top surface of the lift pin as a curved surface (spherical or ellipsoidal) to reduce the contact area between the lift pin and the wafer. However, this approach cannot actively capture particles that have already been generated. Particles generated during contact can still remain on the top surface of the lift pin or be scattered between the wafer and the lift pin, and there is a high probability that they will come into contact with the back of the wafer during the next contact, causing wafer contamination.

[0005] On the other hand, there is a long-term reciprocating sliding friction between the lifting pin and the inner wall of the base through hole. Existing lifting pins typically use a cylindrical surface to mate with the through hole, resulting in a large contact area and high friction. This not only increases the drive load but, more importantly, long-term friction causes wear on both the lifting pin and the inner wall of the through hole. The particles generated by this wear (such as metal particles, ceramic particles, and carbon-based particles) become another significant source of particulate contamination inside the equipment. In harsh environments such as high temperatures and plasma etching, the wear problem is even more pronounced, and in severe cases, it can lead to lifting pin jamming, decreased motion accuracy, and affect the reliability of wafer transmission.

[0006] Furthermore, with the advancement of semiconductor process nodes, the requirements for riser / lower pin materials are becoming increasingly stringent: they need to possess high purity, high temperature resistance, plasma corrosion resistance, low gas escape rate, and non-adhesion to the wafer. Traditional ceramic (such as alumina, SiC) or metal (such as stainless steel, tungsten) riser / lower pins have their own limitations in these aspects. Summary of the Invention

[0007] The following is an overview of the subject matter described in detail in this disclosure. This overview is not intended to limit the scope of the claims.

[0008] This disclosure provides a lifting pin, a method for manufacturing the lifting pin, and a wafer processing device.

[0009] A first aspect of this disclosure provides a lifting pin that extends through a base for placing a wafer, the lifting pin comprising: The lifting pin body includes a first section and a second section connected along the axial direction. The first section is used to support the wafer, and the second section is used to cooperate with the base. Multiple recesses are provided in the first section, the recesses being at least located on the top surface of the first section, and the recesses being used to contain polluting particulate matter; Multiple protruding rib structures are provided on the outer side of the second segment, the extension direction of the protruding rib structures is parallel to the axial direction of the second segment, and the protruding rib structures are used to cooperate with the base.

[0010] According to some embodiments of this disclosure, a textured structure is provided on the inner wall surface of the recess, and the textured structure forms a plurality of collection channels for collecting pollutant particles contained in the recess.

[0011] According to some embodiments of this disclosure, at least a portion of the collection channel extends radially along the recess.

[0012] According to some embodiments of this disclosure, in the projection of a plane perpendicular to the axis of the lifting pin body, the recess is approximately circular or approximately elliptical, and the maximum diameter of the recess is 3μm-10μm; The width of the collection channel is 50nm-100nm.

[0013] According to some embodiments of this disclosure, the lifting pin body further includes a third section connected to the end of the second section away from the first section, the third section being used to connect a driving device; The lifting pin also includes a reinforcing layer, which is attached to the outer surfaces of the first section, the second section, and the third section. Part of the reinforcing layer conformally covers the groove wall of the recess and the channel wall of the collection channel, and the reinforcing layer encloses the recess and the collection channel to form a collection space for collecting polluting particles.

[0014] According to some embodiments of this disclosure, the material of the lifting pin body includes glassy carbon, and the material of the reinforcing layer includes diamond-like carbon.

[0015] According to some embodiments of this disclosure, the first segment includes a connected tapered segment and a constant diameter segment, the constant diameter segment being connected to the second segment, and the diameter of the tapered segment gradually increasing or decreasing along a direction close to the constant diameter segment.

[0016] A second aspect of this disclosure provides a method for manufacturing a lifting pin, the method comprising: A substrate is provided, wherein a first region and a second region are sequentially disposed along an axial direction; A plurality of recesses are formed in the first region of the substrate to obtain the first section of the lifting pin, wherein the recesses are at least located on the top surface of the first section and are used to contain polluting particles. Multiple protruding ridge structures are formed in the second region of the substrate to obtain the second segment of the lifting pin. The extension direction of the protruding ridge structures is parallel to the axial direction of the second segment. The protruding ridge structures are used to cooperate with the base for placing the wafer.

[0017] According to some embodiments of this disclosure, forming a plurality of recesses in the first region of the substrate includes: The first area is sandblasted using a first particle at a first sandblasting pressure and a first path to form a plurality of the depressions in the first area, wherein the spraying direction of the first particle is set at an angle to the axis of the substrate.

[0018] According to some embodiments of this disclosure, the particle size of the first particle is 16μm-20μm; The first sandblasting pressure is 0.15MPa-0.20MPa; The first path is a spiral motion around the axis of the substrate.

[0019] According to some embodiments of this disclosure, after a plurality of recesses are formed in the first region of the substrate, the method for manufacturing the lifting pin further includes: A second particle is used to sandblast the area where the recess is located at a second sandblasting pressure to form a textured structure on the inner wall surface of the recess. The textured structure forms multiple collection channels for collecting pollutant particles contained in the recess. The particle size of the second particle is smaller than that of the first particle, and the second sandblasting pressure is lower than that of the first sandblasting pressure.

[0020] According to some embodiments of this disclosure, the particle size of the second particle is 400nm-800nm; the second sandblasting pressure is 0.03MPa-0.07MPa.

[0021] According to some embodiments of this disclosure, forming a plurality of protruding ridge structures in the second region of the substrate includes: The second area is sandblasted using a third particle with a third sandblasting pressure and a second path. The spraying direction of the third particle is perpendicular to the axis of the substrate, and the second path is a linear reciprocating motion along the axis of the substrate. The second area is sandblasted using a fourth particle at a fourth sandblasting pressure and a third path. The spraying direction of the fourth particle is set at an angle to the axis of the substrate, and the third path is a circumferential motion around the axis of the substrate. The fourth particle has a larger particle size than the third particle, and the fourth blasting pressure is greater than the third blasting pressure.

[0022] According to some embodiments of this disclosure, the particle size of the third particle is 8μm-10μm; the third sandblasting pressure is 0.08MPa-0.12MPa; The fourth particle has a particle size of 25μm-30μm; the fourth sandblasting pressure is 0.20MPa-0.30MPa.

[0023] According to some embodiments of this disclosure, the substrate further includes a third region connected to the second region. After the first segment and the second segment are formed, the substrate retained in the third region constitutes the third segment; The method for manufacturing the lifting pin also includes: A reinforcing layer is formed and attached to the outer surfaces of the first segment, the second segment, and the third segment; Part of the reinforcing layer conformally covers the groove wall of the recess and the channel wall of the collection channel, and the reinforcing layer encloses the recess and the collection channel to form a collection space for collecting polluting particles.

[0024] According to some embodiments of this disclosure, before the formation of the reinforcing layer, the substrate after the formation of the first segment, the second segment and the third segment is subjected to plasma etching to remove burrs; The formation of the reinforcing layer includes: The reinforcing layer is formed on the surface of the substrate using a pulsed laser deposition process. After the reinforcing layer is formed, the method for manufacturing the lifting pin further includes: The substrate is then subjected to annealing treatment.

[0025] A third aspect of this disclosure provides a wafer processing apparatus, the wafer processing apparatus comprising: A base for placing a wafer; As described in the first aspect, the lifting pin passes through the base, the first segment is used to support the wafer, and the second segment is used to cooperate with the base.

[0026] In the lifting pin, the method for manufacturing the lifting pin, and the wafer processing equipment provided in this disclosure, a recessed portion is provided on the first section of the lifting pin body. This creates a space to accommodate contaminant particles, allowing them to detach from the contact surface with the wafer and reducing contamination. Furthermore, the recessed portion reduces the contact area between the lifting pin body and the wafer, decreasing contaminant particles generated during contact and further reducing wafer contamination. It also prevents the lifting pin body from sticking to the wafer, minimizing wafer damage. By providing a raised ridge structure on the outer surface of the second section, the contact area between the lifting pin body and the base is reduced, thereby decreasing the friction between them and reducing contaminant particles generated during friction. This also ensures the service life of both the lifting pin body and the base.

[0027] After reading and understanding the accompanying diagrams and detailed descriptions, the other aspects can be understood. Attached Figure Description

[0028] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of these embodiments. In these drawings, similar reference numerals are used to denote similar elements. The drawings described below are some embodiments of the present disclosure, but not all embodiments. Other drawings will be readily available to those skilled in the art based on these drawings without inventive effort.

[0029] Figure 1 This is a schematic diagram illustrating the mating relationship between the lifting pin, the wafer, and the base, based on relevant technologies.

[0030] Figure 2 This is a schematic diagram illustrating the mating relationship between the lifting pin, the wafer, and the base, according to an exemplary embodiment.

[0031] Figure 3 This is a schematic diagram of a lifting pin according to an exemplary embodiment.

[0032] Figure 4 This is a schematic diagram of the first segment of a lifting pin according to an exemplary embodiment.

[0033] Figure 5 This is a schematic diagram of a recess according to an exemplary embodiment.

[0034] Figure 6 This is a cross-sectional view of the second segment of the lifting pin according to an exemplary embodiment.

[0035] Figure 7 This is a partial cross-sectional view of the first segment after the formation of the reinforcing layer, according to an exemplary embodiment.

[0036] Figure 8 This is a schematic diagram illustrating, according to an exemplary embodiment, a lifting pin forming a first segment divided into a tapered segment and a constant-diameter segment.

[0037] Figure 9 This is a schematic diagram of a substrate according to an exemplary embodiment.

[0038] Figure 10 This is a sandblasting state diagram illustrating the formation of a recess according to an exemplary embodiment.

[0039] Figure 11 This is a sandblasting state diagram illustrating the formation of a textured structure according to an exemplary embodiment.

[0040] Figure 12 This is a sandblasting state diagram illustrating the formation of a convex ridge structure according to an exemplary embodiment.

[0041] Figure 13 This is a schematic diagram illustrating the change in the position of the nozzle when forming a convex ridge structure, according to an exemplary embodiment.

[0042] Figure 14 This is a sandblasting state diagram illustrating the polishing and shaping of a convex ridge structure using a fourth particle, according to an exemplary embodiment.

[0043] Figure 15 This is a flowchart illustrating a method for manufacturing a lifting pin according to an exemplary embodiment.

[0044] Figure label: 100. Lifting pin; 110. Lifting pin body; 111. First section; 112. Second section; 113. Third section; 114. Conical section; 115. Equal diameter section; 120. Recessed part; 121. Texture structure; 122. Collection channel; 130. Raised ridge structure; 140. Reinforcing layer; 150. Collection space; 200. Base; 300. Wafer; 400. Substrate; 410. First region; 420. Second region; 430. Third region; 510. First particle; 520. First path; 530. Second particle; 540. Third particle; 550. Second path; 560. Fourth particle; 570. Third path; 600. Nozzle; 700. Pollutant particles. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions in the disclosed embodiments will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort are within the scope of protection of this disclosure. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this disclosure can be arbitrarily combined with each other.

[0046] Please refer to Figure 1 The lifting pin 100 is a key support component in the wafer 300 transport and positioning system. During the wafer 300 manufacturing process, the contact friction between the lifting pin 100 and the wafer 300 and the base 200 is one of the main sources of contamination particle 700 defects. The lifting pin 100 needs to be in direct contact with the wafer 300 when lifting it. During this contact, fine contamination particles 700 are easily generated. To reduce the generation of contamination particles 700, the top surface of the lifting pin 100 is currently designed as a curved surface, thereby reducing the contact area between the lifting pin 100 and the wafer 300. However, contamination particles 700 generated during contact can remain on the top surface of the lifting pin 100, and these particles still pose a risk of contacting the wafer 300 and causing contamination.

[0047] Based on this, this disclosure provides a lifting pin, a method for manufacturing the lifting pin, and a wafer processing apparatus. By providing a recessed portion on the first section of the lifting pin body, a space for accommodating contaminant particles can be formed, allowing the contaminant particles to detach from the contact surface with the wafer, reducing contamination of the wafer. Furthermore, the recessed portion reduces the contact area between the lifting pin body and the wafer, reducing contaminant particles generated from contact, further reducing wafer contamination, and preventing adhesion between the lifting pin body and the wafer, thus reducing wafer damage. By providing a raised ridge structure on the outer surface of the second section, the contact area between the lifting pin body and the base can be reduced, thereby reducing the friction between the lifting pin body and the base, reducing contaminant particles generated by friction, and ensuring the service life of both the lifting pin body and the base.

[0048] In one exemplary embodiment, a lifting pin is provided, please refer to... Figure 2 and Figure 3 The lifting pin 100 passes through the base 200 for placing the wafer 300. The lifting pin 100 includes a lifting pin body 110, multiple recesses 120 and a convex ridge structure 130.

[0049] The base 200 can be, for example, a base 200 within wafer processing equipment such as epitaxial growth equipment, chemical vapor deposition (CVD) equipment, atomic layer deposition (ALD) equipment, wafer coating equipment, or wafer inspection equipment. The upper surface of the base 200 is used to mount the wafer 300. The base 200 has through-holes through which lifting pins 100 pass. The number of through-holes can be, for example, three or more. The number of lifting pins 100 corresponds to the number of through-holes. By having multiple lifting pins 100 contact the wafer 300, the wafer 300 is stably lifted.

[0050] The axis direction of the lifting pin body 110 can be, for example, vertical. Figure 2 The lifting pin body 110 includes a first segment 111 and a second segment 112 connected axially. The first segment 111 is located at one end of the lifting pin body 110 near the wafer 300 and is used to support the wafer 300. The second segment 112 is used to cooperate with the base 200.

[0051] Please refer to Figure 4 and combined Figure 7 Multiple recesses 120 are provided in the first section 111 of the lifting pin body 110, and the recesses 120 are located on the top surface of the first section 111, which is the contact surface between the lifting pin body 110 and the wafer 300. The recesses 120 are used to accommodate contaminant particles 700, thereby keeping the contaminant particles 700 away from the contact surface between the first section 111 and the wafer 300, i.e., the top surface of the first section 111, reducing the risk of contact between the contaminant particles 700 and the wafer 300 and reducing the contamination of the wafer 300. Since the contaminant particles 700 are mainly generated by the contact between the lifting pin body 110 and the wafer 300, the main location of the contaminant particles 700 is the top surface of the first section 111. By placing the recesses 120 on the top surface of the first section 111, the space of the recesses 120 can be utilized as much as possible to accommodate the contaminant particles 700, thereby improving the utilization efficiency of the space of the recesses 120. In an alternative embodiment, the recess 120 may also be located on the top and side surfaces of the first segment 111, the side surfaces of the first segment 111 not being in direct contact with the wafer 300, and therefore only used to capture contaminant particles 700 escaping from the top edge of the first segment 111, and the contaminant particles 700 having no risk of contact with the wafer 300 after capture, further reducing the risk of contamination.

[0052] Please refer to Figure 3 and Figure 6 The protruding rib structure 130 is provided on the outer side of the second section 112 of the lifting pin body 110, and the extending direction of the protruding rib structure 130 is parallel to the axial direction of the second section 112. Figure 3The z-axis direction in the middle. For example, multiple convex rib structures 130 can be arranged around the axis of the second segment 112. Multiple convex rib structures 130 contact the sidewall of the through hole opened on the base 200. The multiple convex rib structures 130 cooperate with the through hole to achieve guidance and improve the stability of the lifting pin body 110 relative to the base 200 in axial movement.

[0053] For example, the material of the lifting pin body 110 may include at least one of glassy carbon, tungsten carbide, high carbon steel, monocrystalline silicon, silicon carbide, and alumina ceramic. The material of the convex ridge structure 130 may be the same as that of the lifting pin body 110.

[0054] For example, the height of the protruding ridge structure 130 is 1-3 μm, specifically, the height of the protruding ridge structure 130 can be, for example, 1 μm, 2 μm, or 3 μm. The spacing between adjacent protruding ridge structures 130 is 8-12 μm, specifically, the spacing between adjacent protruding ridge structures 130 can be, for example, 8 μm, 9 μm, 10 μm, 11 μm, or 12 μm. The height of the protruding ridge structure 130 can be, for example, the distance from one end away from the second segment 112 along the radial direction of the lifting pin body 110 to the end connected to the second segment 112. The spacing between adjacent protruding ridge structures 130 can be, for example, the average spacing between adjacent protruding ridge structures 130 at different heights.

[0055] In the lifting pin 100 provided in this embodiment, by providing a recess 120 on the first section 111 of the lifting pin body 110, a space for accommodating contaminant particles 700 can be formed, allowing the contaminant particles 700 to detach from the contact surface with the wafer 300, thus reducing the contamination of the wafer 300 by the contaminant particles 700. On the other hand, the recess 120 can reduce the contact area between the lifting pin body 110 and the wafer 300, reducing the contaminant particles 700 generated due to the contact between the lifting pin body 110 and the wafer 300, further reducing the contamination of the wafer 300, and at the same time preventing the lifting pin body 110 from sticking to the wafer 300, thus reducing damage to the wafer 300. By providing a convex ridge structure 130 on the outer side of the second section 112, the contact area between the lifting pin body 110 and the base 200 can be reduced, thereby reducing the friction between the lifting pin body 110 and the base 200, reducing the polluting particles 700 generated by the friction between the lifting pin body 110 and the base 200, and ensuring the service life of the lifting pin body 110 and the base 200.

[0056] In one exemplary embodiment, please refer to Figure 5 The inner wall surface of the recess 120 is provided with a textured structure 121, which forms multiple collection channels 122 for collecting pollutant particles 700 contained in the recess 120.

[0057] The texture structure 121 is recessed in the inner wall of the recess 120, that is, the collection channel 122 is directly connected to the recess 120, which facilitates the entry of pollutant particles 700 that fall into the recess 120 into the collection channel 122.

[0058] In this embodiment, by providing a collection channel 122 on the inner wall surface of the recess 120, the capacity to hold the contaminant particles 700 can be increased, thereby improving the recess 120's ability to hold the contaminant particles 700. Furthermore, the textured structure 121 has a smaller size than the recess 120, which allows for increased contact area with the contaminant particles 700, thereby enhancing the bonding strength and reducing the probability of the contaminant particles 700 detaching from the recess 120, further reducing the risk of contamination on the wafer 300.

[0059] In one exemplary embodiment, please refer to Figure 5 At least a portion of the collection channel 122 extends along the radial direction of the recess 120.

[0060] The collection channel 122 extends from the opening of the recess 120 toward the bottom. Multiple collection channels 122 may be radially distributed within the recess 120, for example, multiple collection channels 122 intersect at the center of the bottom of the recess 120.

[0061] In this embodiment, by setting the collection channel 122 to extend radially, the guiding effect of the collection channel 122 can be used to guide the movement of the contaminant particles 700 during the movement of the lifting pin body 110, thereby moving the contaminant particles 700 away from the wafer 300 and further reducing the risk of contamination of the wafer 300.

[0062] In one exemplary embodiment, in a plane perpendicular to the axis of the lifting pin body 110 (e.g. Figure 3 In the projection of the recess 120 onto the xy plane, the recess 120 is approximately circular or approximately elliptical. The maximum diameter of the recess 120 is 3μm-10μm. Specifically, the diameter of the recess 120 can be, for example, 3μm, 5μm, 7μm, or 10μm.

[0063] The width of the collection channel 122 is 50nm-100nm. Specifically, the width of the collection channel 122 can be, for example, 50nm, 60nm, 70nm, 80nm, 90nm or 100nm.

[0064] In this embodiment, by controlling the dimensions of the recess 120 and the collection channel 122, the recess 120 can have sufficient space to accommodate the contaminant particles 700, reducing the risk of contact between the contaminant particles and the wafer 300. At the same time, the collection channel 122 can give the inner surface of the recess 120 a certain roughness, preventing the contaminant particles 700 from adhering to the inner surface of the recess 120, and facilitating the discharge of the contaminant particles 700.

[0065] In one exemplary embodiment, please refer to Figure 3 The lifting pin body 110 also includes a third section 113 connected to the end of the second section 112 away from the first section 111. The third section 113 is used to connect a drive device, which provides a linear driving force along the axial direction to the lifting pin body 110, thereby driving the wafer 300 to rise and fall through the lifting pin body 110. The drive device can be, for example, a linear drive structure such as a lead screw mechanism connected to a servo motor, a linear motor, or a gear rack. The drive device can be installed in wafer processing equipment such as epitaxial growth equipment, chemical vapor deposition equipment, atomic layer deposition equipment, wafer coating equipment, and wafer inspection equipment.

[0066] Please refer to Figure 7 The lifting pin 100 also includes a reinforcing layer 140, which is attached to the outer surfaces of the first segment 111, the second segment 112, and the third segment 113. The material of the reinforcing layer 140 may include at least one of diamond-like carbon (DLC), silicon carbide (SiC), yttrium oxide (Y2O3), aluminum oxide (Al2O3), yttrium oxyfluoride (YOF), and zirconium oxide (ZrO2). The reinforcing layer 140 improves the wear resistance and corrosion resistance of the lifting pin 100, thereby reducing the amount of contaminating particles 700 generated during processing due to high temperatures and contact, further reducing contamination on the wafer 300, and also improving the service life of the lifting pin 100.

[0067] A portion of the reinforcing layer 140 conformally covers the groove wall of the recess 120 and the channel wall of the collection channel 122. The reinforcing layer 140 encloses the recess 120 and the collection channel 122 to form a collection space 150 for collecting pollutant particles 700. This allows the reinforcing layer 140 to replace the lifting pin body 110 in contact with the pollutant particles 700. The material advantages of the reinforcing layer 140 reduce the bonding strength between the pollutant particles 700 and the lifting pin 100, allowing the pollutant particles 700 to move along the collection space 150 formed by the reinforcing layer 140. The collection channel 122 can guide the pollutant particles 700 to move to a position away from the bottom of the wafer 300, reducing the risk of contact between the pollutant particles 700 and the wafer 300.

[0068] In one exemplary embodiment, please refer to Figure 8 The first segment 111 includes a connected conical segment 114 and a constant diameter segment 115.

[0069] The equal diameter section 115 is connected to the second section 112. The extension direction of the equal diameter section 115 is set along the axial direction of the lifting pin body 110. Along the extension direction of the equal diameter section 115, the diameters of the equal diameter sections 115 at different positions are equal. The equal diameter section 115 is used to connect the tapered section 114 and the second section 112. The equal diameter section 115 is a transition structure between the tapered section 114 and the second section 112.

[0070] Along the direction approaching the constant diameter section 115, the diameter of the tapered section 114 gradually decreases, meaning the size of the end of the tapered section 114 furthest from the constant diameter section 115 (the contact end between the first section 111 and the wafer 300) is larger than the size of the end where the tapered section 114 connects to the constant diameter section 115. The through-hole on the base 200 can be configured as a tapered shape adapted to the tapered section 114. The tapered section 114 serves to prevent the lifting pin 100 from detaching from the base 200 and improves the stability of the lifting pin 100. For example, the end of the tapered section 114 furthest from the constant diameter section 115 can be configured as a plane. By increasing the size of this end, the contact area between the first section 111 and the wafer 300 can be increased, thereby dispersing the pressure between the first section 111 and the wafer 300 and preventing damage to the wafer 300 due to pressure concentration. In an alternative embodiment, the side of the conical segment 114 away from the equal diameter segment 115 can be set as an arc shape, thereby reducing the contact area between the first segment 111 and the wafer 300 while playing an anti-detachment role, thus reducing the risk of contamination of the wafer 300.

[0071] In an alternative embodiment, the diameter of the tapered segment 114 can be gradually increased along the direction close to the constant diameter segment 115. That is, the size of the end of the tapered segment 114 away from the constant diameter segment 115 (the contact end between the first segment 111 and the wafer 300) is smaller than the size of the end where the tapered segment 114 connects to the constant diameter segment 115. This further reduces the contact area between the first segment 111 and the wafer 300, thereby reducing the amount of contaminating particles 700 generated due to the contact between the first segment 111 and the wafer 300, and further reducing the risk of contamination of the wafer 300.

[0072] Please refer to Figure 15 Another exemplary embodiment of this disclosure provides a method for manufacturing a lifting pin, the method comprising: S100. Provide a substrate, wherein a first region and a second region are sequentially provided along the axial direction of the substrate.

[0073] Please refer to Figure 9 , Figure 9The diagram shows a substrate 400. The substrate 400 may be cylindrical in shape, and its material may include at least one of glassy carbon, tungsten carbide, high-carbon steel, single-crystal silicon, silicon carbide, and alumina ceramic. Along the axial direction of the substrate 400, the substrate 400 includes a first region 410 and a second region 420 sequentially disposed, with the first region 410 connected to the second region 420.

[0074] For example, the diameter of the substrate 400 can be 5 mm and the length can be 150 mm. The cylindricity of the substrate 400 is ≤1 μm and the surface roughness Ra is ≤0.05 μm by fine grinding.

[0075] S200. A plurality of recesses are formed in a first region of the substrate to obtain a first section of the lifting pin. The recesses are located at least on the top surface of the first section and are used to contain contaminating particles.

[0076] Please refer to Figure 4 The recess 120 is located on the top surface of the first segment 111, which is the side that contacts the wafer 300. The recess 120 is used to contain contaminant particles 700, thereby keeping the contaminant particles 700 away from the wafer 300 and reducing the risk of contact between the contaminant particles 700 and the wafer 300. Since the contaminant particles 700 are mainly generated by the contact between the lifting pin body 110 and the wafer 300, the main location of the contaminant particles 700 is the top surface of the first segment 111. By placing the recess 120 on the top surface of the first segment 111, the space of the recess 120 can be utilized as much as possible to contain the contaminant particles 700, thereby improving the utilization efficiency of the space of the recess 120. In an alternative embodiment, the recess 120 may also be located on the top and side surfaces of the first segment 111, the side surfaces of the first segment 111 not being in direct contact with the wafer 300, and therefore only used to capture contaminant particles 700 escaping from the top edge of the first segment 111, and the contaminant particles 700 having no risk of contact with the wafer 300 after capture, further reducing the risk of contamination.

[0077] It should be noted that, to ensure that the second region 420 is not affected during the processing of the first region 410, polyimide tape can be wrapped around the second region 420, and a metal mask can be used. The metal mask has cutout areas at the corresponding positions of the first region 410, thus allowing processing only of the first region 410. The same method is used to mask the first region 410 during the subsequent processing of the second region 420, which will not be elaborated further.

[0078] S300. Multiple convex ridge structures are formed in the second region of the substrate to obtain the second section of the lifting pin. The extension direction of the convex ridge structures is parallel to the axial direction of the second section. The convex ridge structures are used to cooperate with the base.

[0079] Please refer to Figure 3 and Figure 6 The protruding rib structure 130 is provided on the outer side of the second section 112 of the lifting pin body 110, and the extending direction of the protruding rib structure 130 is parallel to the axial direction of the second section 112. Figure 3 The z-axis direction in the middle. For example, multiple convex rib structures 130 can be arranged around the axis of the second segment 112. Multiple convex rib structures 130 contact the sidewall of the through hole opened on the base 200. The multiple convex rib structures 130 cooperate with the through hole to achieve guidance and improve the stability of the lifting pin body 110 relative to the base 200 in axial movement.

[0080] In this embodiment, the substrate 400 is divided into a first region 410 and a second region 420, and the first region 410 and the second region 420 are processed respectively, thereby forming a plurality of recesses 120 in the first region 410 and a convex ridge structure 130 in the second region 420. The recesses 120 can accommodate contaminant particles 700, reducing the risk of contact between contaminant particles 700 and wafer 300. The convex ridge structure 130 can reduce the contact area between the lifting pin 100 and the base 200, reduce the wear between the base 200 and the convex ridge structure 130, and improve durability. Thus, the lifting pin 100 can be independently processed according to the different functions of the first region 410 and the second region 420, so that the formed lifting pin 100 has the advantages of low contamination and good wear resistance.

[0081] In one exemplary embodiment, please refer to Figure 10 A plurality of recesses 120 are formed in the first region 410 of the substrate 400, including: A first particle 510 is used to sandblast a first region 410 with a first sandblasting pressure and a first path 520 to form a plurality of recesses 120 in the first region 410. The spraying direction of the first particle 510 is set at an angle to the axis of the substrate 400. The angle between the spraying direction of the first particle 510 and the axis of the substrate 400 is 40°-50°, specifically 40°, 43°, 45°, 47° or 50°.

[0082] The first particle 510 has a particle size of 16μm-20μm. For example, the particle size of the first particle 510 can be 16μm, 17μm, 18μm, 19μm, or 20μm. The first particle 510 can be, for example, silicon carbide (SiC) sand particles. In an alternative embodiment, the first particle 510 can also be silicon dioxide (SiO2) sand particles to avoid the first particle 510 remaining embedded in the interior of the substrate 400 and causing additional contamination, further reducing the contamination risk of the wafer 300.

[0083] The first sandblasting pressure is 0.15MPa-0.20MPa. For example, the first sandblasting pressure can be 0.15MPa, 0.16MPa, 0.17MPa, 0.18MPa, 0.19MPa or 0.20MPa.

[0084] The first path 520 is a helical motion around the axis of the substrate 400. In an alternative embodiment, the first path 520 can also be a circular motion around the axis of the substrate 400, and can form multiple recesses 120 on the end face and side face of the first region 410 through a combination of circumferential rotation and axial stepping. It should be noted that the first path 520 is the moving path of the nozzle 600 that ejects the first particles 510.

[0085] Since the size of the recess 120 formed in the sandblasting process is smaller than the particle size, the recess 120 with a maximum diameter of 3μm-10μm can be controlled by controlling the particle size of the first particle 510 and the first sandblasting pressure.

[0086] In this embodiment, by impacting the first region 410 of the substrate 400 with the first particle 510, a recess 120 can be quickly formed in the first region 410 of the substrate 400. Furthermore, by controlling the particle size of the first particle 510 and the sandblasting pressure, the size of the formed recess 120 can be controlled to ensure that a recess 120 of appropriate size is formed, thereby ensuring the quality of the finished product.

[0087] In one exemplary embodiment, please refer to Figure 11 After forming multiple recesses 120 in the first region 410 of the substrate 400, the manufacturing method of the lifting pin 100 further includes: The area where the recess 120 is located is sandblasted using a second particle 530 at a second sandblasting pressure to form a textured structure 121 on the inner wall surface of the recess 120. The textured structure 121 forms a plurality of collection channels 122, which are used to collect the pollutant particles 700 contained in the recess 120.

[0088] The second particle 530 has a smaller particle size than the first particle 510, and the second blasting pressure is lower than the first blasting pressure. For example, the particle size of the second particle 530 is 400nm-800nm, specifically, the particle size of the second particle 530 can be 400nm, 500nm, 600nm, 700nm, or 800nm. The second blasting pressure is 0.03MPa-0.07MPa, specifically, the second blasting pressure can be 0.03MPa, 0.04MPa, 0.05MPa, 0.06MPa, or 0.07MPa. The second particle 530 can be, for example, alumina (Al2O3) sand particles.

[0089] The textured structure 121 formed by the sandblasting process is recessed into the inner wall of the recess 120, that is, the collection channel 122 is directly connected to the recess 120, which facilitates the entry of pollutant particles 700 falling into the recess 120 into the collection channel 122.

[0090] For example, the spray angle of the second particle 530 is the same as that of the first particle 510. In an alternative embodiment, the spray angle of the second particle 530 may also be set at an angle to the spray angle of the first particle 510, and the angle is ≤10°. For example, when the spray angle of the first particle 510 is 45°, the spray angle of the second particle 530 is 35°-55°. When the spray angle of the first particle 510 is 40°, the spray angle of the second particle 530 is 30°-50°. When the spray angle of the first particle 510 is 50°, the spray angle of the second particle 530 is 40°-60°. By controlling the angle between the spray angle of the second particle 530 and the spray angle of the first particle 510, it is ensured that the second particle 530 enters the recess 120 and can move along the inner wall surface of the recess 120 to form a texture structure 121 on the inner wall surface of the recess 120. The movement path of the nozzle 600 that ejects the second particle 530 can be the same as that of the nozzle 600 that ejects the first particle 510.

[0091] In this embodiment, the second particle 530 impacts the substrate 400 under the action of the second sandblasting pressure. The second particle 530 that collides with the inner wall of the recess 120 will move along the inner wall of the recess 120 and form a recessed texture structure 121 on the inner wall of the recess 120, thereby forming a collection channel 122 communicating with the recess 120. The collection channel 122 can increase the holding space of the contaminant particles 700 and guide the movement of the contaminant particles 700, so that the contaminant particles 700 are away from the wafer 300, reducing the risk of contact between the wafer 300 and the contaminants.

[0092] In one exemplary embodiment, please refer to Figure 12 and Figure 14 A plurality of protruding ridge structures 130 are formed in the second region 420 of the substrate 400, including: S310. The second area is sandblasted using a third particle with a third sandblasting pressure and a second path. The spraying direction of the third particle is perpendicular to the axis of the substrate, and the second path is a linear reciprocating motion along the axis of the substrate.

[0093] The particle size of the third particle 540 is 8μm-10μm, specifically, the particle size of the third particle 540 can be 8μm, 9μm or 10μm. The third sandblasting pressure is 0.08MPa-0.12MPa, specifically, the third sandblasting pressure can be 0.08MPa, 0.09MPa, 0.10MPa, 0.11MPa or 0.12MPa.

[0094] For example, when sandblasting the second area 420 along the second path 550, it is necessary to periodically change the spray position of the nozzle 600. For example, please refer to... Figure 13 After the nozzle 600 performs one, two, three, or more reciprocating movements along the axis of the substrate 400, the nozzle 600 rotates 60° around the axis of the substrate 400. The nozzle 600 continues to move along the second path 550, and then rotates another 60° around the axis of the substrate 400, repeating this process five times to uniformly form the raised ridge structure 130 in the circumferential direction of the second region 420. In an alternative embodiment, the rotation angle of the nozzle 600 each time can be replaced with 30°, 40°, or 90°, but the number of rotations needs to be changed so that the nozzle 600 rotates one full revolution around the axis of the substrate 400 to uniformly form the raised ridge structure 130 in the circumferential direction of the second region 420. In another alternative embodiment, the same effect can also be achieved by rotating the substrate 400.

[0095] For example, the third particle 540 may be a diamond grit.

[0096] S320. The second area is sandblasted using a fourth particle with a fourth sandblasting pressure and a third path. The spraying direction of the fourth particle is set at an angle to the axis of the substrate, and the third path is a circumferential motion around the axis of the substrate.

[0097] The fourth particle 560 has a larger particle size than the third particle 540, and the fourth blasting pressure is greater than the third blasting pressure. For example, the particle size of the fourth particle 560 is 25μm-30μm; specifically, the particle size of the fourth particle 560 can be 25μm, 27μm, 28μm, or 30μm. The fourth blasting pressure is 0.20MPa-0.30MPa; specifically, the fourth blasting pressure can be 0.20MPa, 0.23MPa, 0.25MPa, 0.27MPa, or 0.30MPa.

[0098] When the spray range of the fourth particle 560 along the axial direction of the substrate 400 is sufficient to cover the second region 420, the nozzle 600 may move only along the third path 570. When the spray range of the fourth particle 560 along the axial direction of the substrate 400 is insufficient to cover the second region 420, the nozzle 600 needs to reciprocate along the axial direction of the substrate 400 while moving along the third path 570, so that the spray range of the fourth particle 560 covers the second region 420 along the axial direction of the substrate 400.

[0099] For example, the fourth particle 560 can be cubic boron nitride (cBN) abrasive grains, which allows the ridge structure 130 to be blasted out first by the harder third particle 540, and then polished and shaped by the softer fourth particle 560, thereby improving the surface finish of the ridge structure 130. The angle between the blasting direction of the fourth particle 560 and the axis of the substrate 400 is 50°-70°. Specifically, the angle between the blasting direction of the fourth particle 560 and the axis of the substrate 400 can be, for example, 50°, 55°, 60°, 65°, or 70°.

[0100] In this embodiment, the third particle 540 moves linearly back and forth along the axis of the substrate 400 to spray out multiple convex ridge structures 130 in the second region 420. Then, the fourth particle 560 polishes and shapes the convex ridge structures 130 to remove the sharp burrs remaining on the edges of the convex ridge structures 130 and reduce the surface roughness of the convex ridge structures 130. While further reducing the friction between the convex ridge structures 130 and the base 200, it can avoid local stress concentration caused by the uneven height of the convex ridge structures 130 in the substrate 400, and improve the stability of the lifting pin 100 in use.

[0101] In one exemplary embodiment, please refer to Figure 9 The substrate 400 also includes a third region 430 connected to the second region 420.

[0102] After the formation of the first segment 111 and the formation of the second segment 112, the substrate 400 retained in the third region 430 constitutes the third segment 113.

[0103] The third segment 113 is used to connect a drive device, which provides a linear driving force along the axial direction to the lifting pin body 110, thereby driving the wafer 300 to rise and fall through the lifting pin body 110. The drive device can be, for example, a linear drive structure such as a lead screw mechanism connected to a servo motor, a linear motor, or a gear rack assembly. The drive device can be installed in wafer processing equipment such as epitaxial growth equipment, chemical vapor deposition equipment, atomic layer deposition equipment, wafer coating equipment, and wafer inspection equipment.

[0104] In this embodiment, since the third segment 113 does not contact the wafer 300 or the base 200, the third segment 113 can be directly formed by the third region 430. Without affecting the function of the formed lifting pin 100, there is no need to process the third region 430, which simplifies the processing procedure.

[0105] In one exemplary embodiment, the method for manufacturing the lifting pin 100 further includes: A reinforcing layer is formed and attached to the outer surfaces of the first, second, and third sections.

[0106] Please refer to Figure 7 A portion of the reinforcing layer 140 conformally covers the groove wall of the recess 120 and the channel wall of the collection channel 122. The reinforcing layer 140 encloses the recess 120 and the collection channel 122 to form a collection space 150 for collecting pollutant particles 700. This allows the reinforcing layer 140 to replace the lifting pin body 110 in contact with the pollutant particles 700. The material advantages of the reinforcing layer 140 reduce the bonding strength between the pollutant particles 700 and the lifting pin 100, allowing the pollutant particles 700 to move along the collection space 150 enclosed by the reinforcing layer 140. The collection channel 122 can guide the pollutant particles 700 to move to a position away from the bottom of the wafer 300, reducing the risk of contact between the pollutant particles 700 and the wafer 300.

[0107] For example, the material of the reinforcing layer 140 may include at least one of diamond-like carbon (DLC), silicon carbide (SiC), yttrium oxide (Y2O3), aluminum oxide (Al2O3), yttrium oxyfluoride (YOF), and zirconium oxide (ZrO2). The reinforcing layer 140 can improve the wear resistance and corrosion resistance of the lifting pin 100, thereby reducing the contamination particles 700 generated by the lifting pin 100 during processing due to high temperature, contact, and other factors, further reducing the contamination of the wafer 300, and also improving the service life of the lifting pin 100.

[0108] In this embodiment, by forming a reinforcing layer 140 covering the first segment 111, the second segment 112, and the third segment 113, protection can be provided for the lifting pin 100, improving its wear resistance and corrosion resistance. Simultaneously, by replacing the lifting pin body 110 in contact with the contaminating particles 700, the reinforcing layer 140's material advantages reduce the bonding strength between the contaminating particles 700 and the lifting pin 100, allowing the contaminating particles 700 to move along the collection space 150 enclosed by the reinforcing layer 140. This allows the collection channel 122 to guide the contaminating particles 700 to a position away from the bottom of the wafer 300, reducing the risk of contact between the contaminating particles 700 and the wafer 300.

[0109] In an exemplary embodiment, before forming the reinforcing layer 140, the substrate 400 after forming the first segment 111, the second segment 112 and the third segment 113 is subjected to plasma etching to remove burrs, thereby improving the flatness of the surface of the lifting pin 100 and improving the overall quality of the lifting pin 100.

[0110] For example, plasma etching can be used to remove burrs by placing the entire ejector pin into the chamber of a radio frequency (RF) plasma etching device, introducing argon (Ar) gas, and treating it for 15 minutes at a power of 200W and a pressure of 10Pa, thereby effectively removing microscopic burrs and sharp edges from the surface of each sandblasted area.

[0111] In one exemplary embodiment, forming the reinforcing layer 140 includes: A reinforcing layer is formed on the surface of a substrate using pulsed laser deposition.

[0112] During the deposition of the reinforcing layer 140 using pulsed laser deposition (PLD), the deposition rate of the raw material is equal at different locations on the surface of the lifting pin 100. However, because the inner surface of the recess 120 and the channel wall of the collection channel 122 increase the surface area at the location of the recess 120, the deposition amount of elements per unit area is reduced. Therefore, the thickness of the reinforcing layer 140 formed in the recess 120 is less than the thickness of the reinforcing layer 140 formed at other locations. The thickness of the reinforcing layer 140 located in the recess 120 and the collection channel 122 is controlled to be less than or equal to 10 nm, for example, 7 nm, 8 nm, 9 nm, or 10 nm, to avoid the reinforcing layer 140 occupying too much space in the recess 120 and the collection channel 122, ensuring that the recess 120 and the collection channel 122 have sufficient space to accommodate the contaminant particles 700. At this time, the thickness of the reinforcing layer 140 in the remaining part of the substrate 400 is 70nm-90nm, for example, it can be 70nm, 75nm, 80nm, 85nm or 90nm.

[0113] After forming the reinforcing layer 140, the manufacturing method of the lifting pin also includes: The substrate is annealed.

[0114] For example, the annealing treatment of the substrate 400 specifically includes: placing the lifting pin 100 after the deposition of the reinforcing layer 140 in a vacuum annealing furnace, holding it at 900°C for 2 hours, and then cooling it with the furnace. This process effectively enhances the bonding force between the reinforcing layer 140 and the lifting pin 100, and eliminates the internal stress accumulated during the sandblasting and deposition process through high-temperature thermal relaxation.

[0115] Another exemplary embodiment of this disclosure provides a wafer processing apparatus, which may be, for example, one of an epitaxial growth apparatus, a chemical vapor deposition (CVD) apparatus, an atomic layer deposition (ALD) apparatus, a wafer coating apparatus, a wafer inspection apparatus, etc. The wafer processing apparatus includes a base 200 and a lifting pin 100 as disclosed in the first exemplary embodiment.

[0116] The base 200 is used to place the wafer 300.

[0117] The lifting pin 100 passes through the base 200. The lifting pin body 110 includes a first section 111 and a second section 112 connected along the axial direction. The first section 111 is used to support the wafer 300, and the second section 112 is used to cooperate with the base 200.

[0118] In this embodiment, since the lifting pin 100 of the wafer processing equipment has the advantages of low contamination of the wafer 300 and low friction between the lifting pin 100 and the base 200, the wafer processing equipment has the same advantages.

[0119] This disclosure provides a recess 120 on the first section 111 of the lifting pin body 110. This creates a space to accommodate contaminant particles 700, allowing them to detach from the contact surface with the wafer 300 and reducing contamination of the wafer 300. Furthermore, the recess 120 reduces the contact area between the lifting pin body 110 and the wafer 300, further reducing contaminant particles 700 generated during contact and contamination of the wafer 300. Simultaneously, it prevents the lifting pin body 110 from sticking to the wafer 300, minimizing damage to the wafer 300. By providing a convex ridge structure 130 on the outer side of the second section 112, the contact area between the lifting pin body 110 and the base 200 can be reduced, thereby reducing the friction between the lifting pin body 110 and the base 200, reducing the polluting particles 700 generated by the friction between the lifting pin body 110 and the base 200, and ensuring the service life of the lifting pin body 110 and the base 200.

[0120] The various embodiments or implementation methods described in this specification are presented in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0121] In the description of this specification, references to the terms "embodiment," "exemplary embodiment," "some implementation," "illustrated implementation," "example," etc., refer to specific features, structures, materials, or characteristics described in connection with an implementation or example that are included in at least one implementation or example of this disclosure.

[0122] In this specification, the illustrative expressions of the terms used do not necessarily refer to the same implementation or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more implementations or examples.

[0123] In the description of this disclosure, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.

[0124] It is understood that the terms "first," "second," etc., as used in this disclosure may be used to describe various structures, but these structures are not limited by these terms. These terms are only used to distinguish one structure from another.

[0125] In one or more accompanying drawings, the same elements are represented by similar reference numerals. For clarity, many parts in the drawings are not drawn to scale. Furthermore, certain well-known parts may not be shown. For simplicity, a structure obtained after several steps may be depicted in a single drawing. Many specific details of this disclosure, such as the structure, materials, dimensions, processing methods, and techniques of the devices, are described below to provide a clearer understanding of the disclosure. However, as those skilled in the art will understand, this disclosure may be implemented without adhering to these specific details.

[0126] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this disclosure, and are not intended to limit them. Although this disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this disclosure.

Claims

1. A lifting pin, characterized in that, The lifting pin passes through a base for placing the wafer, and the lifting pin includes: The lifting pin body includes a first section and a second section connected along the axial direction. The first section is used to support the wafer, and the second section is used to cooperate with the base. Multiple recesses are provided in the first section, the recesses being at least located on the top surface of the first section, and the recesses being used to contain polluting particulate matter; Multiple protruding rib structures are provided on the outer side of the second segment, the extension direction of the protruding rib structures is parallel to the axial direction of the second segment, and the protruding rib structures are used to cooperate with the base.

2. The lifting pin according to claim 1, characterized in that, The inner wall of the recess is provided with a textured structure, which forms multiple collection channels for collecting pollutant particles contained in the recess.

3. The lifting pin according to claim 2, characterized in that, At least a portion of the collection channel extends radially along the recess.

4. The lifting pin according to claim 2, characterized in that, In the projection of a plane perpendicular to the axis of the lifting pin body, the recess is approximately circular or approximately elliptical, and the maximum diameter of the recess is 3μm-10μm. The width of the collection channel is 50nm-100nm.

5. The lifting pin according to claim 2, characterized in that, The lifting pin body also includes a third section connected to the end of the second section away from the first section, and the third section is used to connect the driving device; The lifting pin also includes a reinforcing layer, which is attached to the outer surfaces of the first section, the second section, and the third section. Part of the reinforcing layer conformally covers the groove wall of the recess and the channel wall of the collection channel, and the reinforcing layer encloses the recess and the collection channel to form a collection space for collecting polluting particles.

6. The lifting pin according to claim 5, characterized in that, The material of the lifting pin body includes glassy carbon, and the material of the reinforcing layer includes diamond-like carbon.

7. The lifting pin according to claim 1, characterized in that, The first segment includes a connected conical segment and a constant diameter segment, the constant diameter segment being connected to the second segment, and the diameter of the conical segment gradually increases or decreases along the direction close to the constant diameter segment.

8. A method for manufacturing a lifting pin, characterized in that, The method for manufacturing the lifting pin includes: A substrate is provided, wherein a first region and a second region are sequentially disposed along an axial direction; A plurality of recesses are formed in the first region of the substrate to obtain the first section of the lifting pin, wherein the recesses are at least located on the top surface of the first section and are used to contain polluting particles. Multiple protruding ridge structures are formed in the second region of the substrate to obtain the second segment of the lifting pin. The extension direction of the protruding ridge structures is parallel to the axial direction of the second segment. The protruding ridge structures are used to cooperate with the base for placing the wafer.

9. The method for manufacturing the lifting pin according to claim 8, characterized in that, The formation of a plurality of recesses in the first region of the substrate includes: The first area is sandblasted using a first particle at a first sandblasting pressure and a first path to form a plurality of the depressions in the first area, wherein the spraying direction of the first particle is set at an angle to the axis of the substrate.

10. The method for manufacturing the lifting pin according to claim 9, characterized in that, The particle size of the first particle is 16μm-20μm; The first sandblasting pressure is 0.15MPa-0.20MPa; The first path is a spiral motion around the axis of the substrate.

11. The method for manufacturing the lifting pin according to claim 9, characterized in that... After a plurality of recesses are formed in the first region of the substrate, the method for manufacturing the lifting pin further includes: A second particle is used to sandblast the area where the recess is located at a second sandblasting pressure to form a textured structure on the inner wall surface of the recess. The textured structure forms a plurality of collection channels for collecting pollutant particles contained in the recess. The particle size of the second particle is smaller than that of the first particle, and the second sandblasting pressure is lower than that of the first sandblasting pressure.

12. The method for manufacturing the lifting pin according to claim 11, characterized in that, The particle size of the second particle is 400nm-800nm; the second sandblasting pressure is 0.03MPa-0.07MPa.

13. The method for manufacturing the lifting pin according to claim 8, characterized in that, The formation of a plurality of protruding ridge structures in the second region of the substrate includes: The second area is sandblasted using a third particle with a third sandblasting pressure and a second path. The spraying direction of the third particle is perpendicular to the axis of the substrate, and the second path is a linear reciprocating motion along the axis of the substrate. The second area is sandblasted using a fourth particle at a fourth sandblasting pressure and a third path. The spraying direction of the fourth particle is set at an angle to the axis of the substrate, and the third path is a circumferential motion around the axis of the substrate. The fourth particle has a larger particle size than the third particle, and the fourth blasting pressure is greater than the third blasting pressure.

14. The method for manufacturing the lifting pin according to claim 13, characterized in that, The particle size of the third particle is 8μm-10μm; the third sandblasting pressure is 0.08MPa-0.12MPa; The fourth particle has a particle size of 25μm-30μm; the fourth sandblasting pressure is 0.20MPa-0.30MPa.

15. The method for manufacturing the lifting pin according to claim 11, characterized in that, The substrate also includes a third region connected to the second region. After the first segment and the second segment are formed, the substrate retained in the third region constitutes the third segment; The method for manufacturing the lifting pin also includes: A reinforcing layer is formed and attached to the outer surfaces of the first segment, the second segment, and the third segment; Part of the reinforcing layer conformally covers the groove wall of the recess and the channel wall of the collection channel, and the reinforcing layer encloses the recess and the collection channel to form a collection space for collecting polluting particles.

16. The method for manufacturing the lifting pin according to claim 15, characterized in that, Before forming the reinforcing layer, the substrate after forming the first segment, the second segment and the third segment is subjected to plasma etching to remove burrs; The formation of the reinforcing layer includes: The reinforcing layer is formed on the surface of the substrate using a pulsed laser deposition process. After the reinforcing layer is formed, the method for manufacturing the lifting pin further includes: The substrate is then subjected to annealing treatment.

17. A wafer processing apparatus, characterized in that, The wafer processing equipment includes: A base for placing a wafer; The lifting pin as described in any one of claims 1-7, wherein the lifting pin passes through the base, the first segment is used to support the wafer, and the second segment is used to cooperate with the base.

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