Glass-metal integrated TGV substrate and method of manufacturing the same

Abstract

The application discloses a glass-metal integrated TGV substrate and a preparation method thereof, and relates to the technical field of substrate preparation.The method comprises the following steps: providing a copper foil, manufacturing a conductive circuit on the copper foil through a material forming process; forming a metal film layer on the surface of the copper foil; alternately stacking glass substrates and the copper foil; pressurizing in a mold, heating in a protective atmosphere, fusing adjacent glass substrates with each other, and forming a glass-metal composite block after cooling; and cutting along a direction perpendicular to the stacking direction to form a substrate sheet.The copper foil is preformed with a circuit, then is alternately stacked with glass substrates and is co-fired, then is cut along a direction perpendicular to the stacking direction to expose the cross section of the copper foil and form an interconnection channel penetrating through the thickness direction of the substrate, thus completely canceling a plating hole filling process, fundamentally avoiding insufficient hole filling and internal cavity defects caused by difficult exchange of deep hole plating liquid, and realizing a depth-width ratio higher than that of the prior art.

Description

Technical Field

[0001] This invention relates to the field of substrate fabrication technology, specifically to a glass-metal integrated TGV substrate and its fabrication method. Background Technology

[0002] Through-glass via (TW) technology is one of the core technologies in advanced 3D electronic packaging. It achieves vertical interconnection between chips and substrates, and between chips themselves, by fabricating vertical interconnect vias on a glass substrate and filling them with conductive material. Compared to traditional through-silicon via (TSV) technology, glass substrates offer superior high-frequency electrical characteristics, good dimensional stability, and low cost advantages, making them promising for applications in RF chips, MEMS sensors, high-density system integration, and Mini-LED and Micro-LED display substrates.

[0003] Currently, the mainstream TGV substrate fabrication process typically includes the following steps: first, through-holes are created on the glass substrate by laser-induced modification combined with wet etching (such as the LIDE technology route); then, a seed layer is sputtered by physical vapor deposition; the through-holes are filled by electroplating or chemical plating; subsequently, chemical mechanical polishing is performed for planarization; and finally, a redistribution layer and bumps are created on the glass surface by photolithography and electroplating.

[0004] However, the aspect ratio of electroplating for via filling has a bottleneck. When the aspect ratio of TGV is large, the exchange of plating solution inside the via is hindered, the diffusion of additives and metal ions is limited, and the deposition rate at the via opening is much faster than in the center region of the via. This leads to premature closure of the via opening, resulting in void defects, which directly affects interconnect reliability and product yield, and also limits the application of TGV substrates in high-density 3D packaging. Summary of the Invention

[0005] The purpose of this invention is to provide a glass-metal integrated TGV substrate and its preparation method to solve the problems in the background art.

[0006] To achieve the above objectives, the present invention provides the following technical solution: A method for fabricating a glass-metal integrated TGV substrate includes the following steps: S1: Provide copper foil and fabricate conductive lines on the copper foil using a material forming process; S2: Form a metal film layer on the surface of a copper foil with conductive lines; S3: Provide a glass substrate, and alternately stack the glass substrate and copper foil with the metal film layer formed on its surface to form a stacked body; S4: The laminate is placed in a mold and subjected to a pressure of 0.5MPa to 5MPa. Under an inert protective atmosphere with an oxygen content of ≤10ppm, it is heated to 850℃ to 900℃ at a heating rate of 5℃ / min to 15℃ / min and held for 10min to 60min to fuse adjacent glass substrates together. After cooling, a glass-metal composite block is formed. S5: Cut the glass-metal composite block along the stacking direction perpendicular to the stacked body to form a substrate sheet; wherein, perpendicular to the stacking direction means that the cutting plane is parallel to the surface of a single glass substrate. S6: Grind and smooth the cut surface of the substrate sheet to remove the cutting damage layer and surface burrs, and obtain the TGV substrate semi-finished product.

[0007] Based on the above technical solutions, the present invention also provides the following optional technical solutions: In one alternative embodiment, the thickness of the copper foil is 0.01 mm to 0.05 mm.

[0008] In one alternative: the material forming process includes, but is not limited to, stamping, etching, or laser processing; the conductive lines include, but are not limited to, straight lines, curved lines, or interconnected lines.

[0009] In one alternative: the metal film layer is formed using processes including but not limited to physical vapor deposition, chemical vapor deposition, atomic layer deposition, or evaporation. The material of the metal film layer is a metal with an affinity for glass, including but not limited to Ti or Cr; The thickness of the metal film is 1 nm to 100 nm.

[0010] In one alternative, the mold is made of materials including, but not limited to, ceramics, metals, or graphite that are incompatible with glass.

[0011] In one alternative: the protective atmosphere is an inert gas atmosphere; the heating is carried out in a batch furnace or a continuous furnace.

[0012] In one alternative: the cutting is performed using any one of diamond wire cutting, water jet cutting, or blade cutting.

[0013] In one alternative: the conductive lines prepared in step S1 satisfy the following conditions: line width L ≤ 10 μm and line spacing S ≤ 10 μm.

[0014] A glass-metal integrated TGV substrate is prepared by the above-described method, comprising a glass substrate; And copper foil circuits embedded in the glass substrate, wherein the copper foil circuits are formed by pre-forming conductive circuits from copper foil through a material forming process and then covering the glass substrate, the surface of the copper foil circuits has a metal film layer, and the copper foil circuits are bonded to the glass substrate through the metal film layer; The substrate has a cut surface that exposes a cross-section of the copper foil circuit, the cross-section extending through the thickness direction of the substrate.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. This invention involves prefabricating circuits with copper foil, then alternately stacking and co-firing them with a glass substrate. The copper foil is then cut perpendicular to the stacking direction to expose the cross-section of the copper foil, forming interconnect channels that penetrate the thickness direction of the substrate. This completely eliminates the electroplating filling process, fundamentally avoiding insufficient filling and internal void defects caused by the difficulty of exchanging electroplating solution in deep holes. At the same time, the interconnect structure formed by the cutting method is not limited by the electroplating process and can achieve a higher aspect ratio than existing technologies.

[0016] 2. This invention achieves superior redistribution layer line accuracy compared to traditional TGV processes, where the conductive lines are fabricated at the copper foil stage through etching or stamping. The titanium or chromium metal film layer on the copper foil surface undergoes an interfacial reaction or mechanical bonding with the glass during co-firing, resulting in a higher bonding strength than that achieved by sputtering and electroplating in existing technologies. The interconnecting conductor is the copper foil itself, which has a lower on-resistance than the electroplated copper layer, exhibiting excellent conductivity.

[0017] 3. This invention simplifies the core processes into four steps: copper foil prefabrication, lamination and co-firing, vertical cutting, and surface planarization. Compared to the traditional TGV process, this reduces process complexity and improves production efficiency and product yield. The copper foil thickness can be selected as needed, and the material forming process can employ etching, stamping, or laser processing. The co-firing equipment can be a continuous furnace or a batch furnace, adapting to the process requirements of different scenarios such as high-density wiring and power applications. Attached Figure Description

[0018] Figure 1 This is a flowchart of the preparation process of the present invention.

[0019] Figure 2 This is a schematic diagram of the structure of the copper foil with circuitry of the present invention.

[0020] Figure 3 This is a schematic diagram of the structure of the finished TGV substrate of the present invention.

[0021] Figure 4 This is a schematic diagram of the structure of the nanoscale metal film formed on the copper surface according to the present invention.

[0022] Figure 5This is a schematic diagram of the conductive lines etched according to the present invention.

[0023] Figure 6 This is a schematic diagram of the structure of the integrated glass / copper foil block for invention.

[0024] Figure 7 This is a schematic diagram of the integrated block of glass / copper foil cut by diamond wire according to the present invention.

[0025] Figure 8 This is a schematic diagram of void defects in traditional electroplating.

[0026] Figure 9 This is a schematic diagram of the structure of the finished TGV substrate with multi-layer circuitry of the present invention.

[0027] Figure 10 This is a schematic diagram of the structure of the finished TGV substrate after vertical cutting and polishing according to the present invention. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments.

[0029] In one embodiment, such as Figures 1-10 As shown, a method for fabricating a glass-metal integrated TGV substrate includes the following steps: S1: Provide copper foil and fabricate conductive lines on the copper foil using a material forming process; S2: Form a metal film layer on the surface of a copper foil with conductive lines; S3: Provide a glass substrate, and alternately stack the glass substrate and copper foil with the metal film layer formed on its surface to form a stacked body; S4: The laminate is placed in a mold and subjected to a pressure of 0.5MPa to 5MPa. Under an inert protective atmosphere with an oxygen content of ≤10ppm, it is heated to 850℃ to 900℃ at a heating rate of 5℃ / min to 15℃ / min and held for 10min to 60min to fuse adjacent glass substrates together. After cooling, a glass-metal composite block is formed. S5: Cut the glass-metal composite block along the stacking direction perpendicular to the stacked body to form a substrate sheet; wherein, perpendicular to the stacking direction means that the cutting plane is parallel to the surface of a single glass substrate. S6: Grind and smooth the cut surface of the substrate sheet to remove the cutting damage layer and surface burrs, and obtain the TGV substrate semi-finished product.

[0030] In this embodiment, the above-described preparation method involves pre-fabricating fine circuits on copper foil and then alternately stacking and co-firing them with a glass substrate. The glass melts and flows at high temperature, encapsulating the copper foil inside. After cooling and solidification, an integrated composite block is formed. Then, vertical cutting exposes the cross-section of the copper foil circuitry at the cut surface, forming interconnect channels that penetrate the thickness direction of the substrate. This method abandons the traditional TGV process of forming and filling vias first, eliminating the need for electroplating and filling. This fundamentally avoids insufficient filling and internal void defects caused by difficulties in electroplating solution exchange. Furthermore, the interconnect structure formed by the cutting method is not limited by the aspect ratio of the electroplating process, which is beneficial for improving the circuit density and conductivity reliability of the substrate. After cutting, the surface of the substrate sheet is ground and smoothed to remove surface damage layers and burrs generated during the cutting process, resulting in a TGV substrate product with good flatness and surface quality.

[0031] In one embodiment, the thickness of the copper foil is 0.01 mm to 0.05 mm.

[0032] Within this range, the copper foil thickness ensures sufficient mechanical strength and current carrying capacity for the conductive circuit, while also facilitating the full coverage of the copper foil by the glass melt during the co-firing process. Furthermore, this thickness range matches the characteristic dimensions of the exposed copper foil cross-section after cutting, ensuring that interconnection end faces with good geometry can be formed at the cut surface.

[0033] In one embodiment, the material forming process includes, but is not limited to, stamping, etching, or laser processing; the conductive lines include, but are not limited to, straight lines, curved lines, or interconnecting lines.

[0034] Etching is suitable for thinner copper foils, enabling finer circuit dimensions; stamping is suitable for thicker copper foils, offering higher production efficiency and lower cost; laser processing is suitable for small-batch production or the fabrication of circuits with special shapes. Different forming processes can be flexibly selected according to the actual application scenario to meet the requirements of different circuit precision and current carrying capacity.

[0035] In one embodiment, the metal film layer is formed using processes including but not limited to physical vapor deposition, chemical vapor deposition, atomic layer deposition, or vapor deposition. The material of the metal film layer is a metal with an affinity for glass, including but not limited to Ti or Cr; The thickness of the metal film is 1 nm to 100 nm.

[0036] The metal film is made of a metal with an affinity for glass, such as titanium or chromium, and its thickness is on the nanometer scale. During the lamination and co-firing process, this metal film acts as a transition layer between the copper foil and the glass. One side forms a metal-to-metal bond with the copper foil, while the other side undergoes an interfacial reaction or mechanical bonding with the glass, thereby establishing a strong bonding interface between the copper foil and the glass. This effectively improves the bonding strength between the two and prevents delamination during use.

[0037] In one embodiment, the mold material includes, but is not limited to, ceramics, metals, or graphite that are incompatible with glass.

[0038] Since the mold is in direct contact with the glass during co-firing, using materials incompatible with the glass can prevent the mold from sticking or reacting chemically with the glass, ensuring that the laminate can be smoothly removed from the mold after co-firing, while also ensuring the dimensional accuracy and surface quality of the laminate.

[0039] In one embodiment, the protective atmosphere is an inert gas atmosphere; the heating is carried out in an intermittent furnace or a continuous furnace.

[0040] Inert gas protection prevents oxidation of copper foil during high-temperature co-firing, ensuring the conductivity and circuit integrity of the copper conductor. Batch furnaces are suitable for small-batch production or process development stages, facilitating control of temperature profiles and holding times; continuous furnaces are suitable for large-scale mass production, offering high production efficiency and good process consistency.

[0041] In one embodiment, the cutting is performed using any one of diamond wire cutting, waterjet cutting, or blade cutting.

[0042] The glass-metal composite block is cut into substrate sheets of a specified thickness along the stacking direction perpendicular to the stacking direction of the laminate.

[0043] In one embodiment, the conductive lines prepared in step S1 satisfy the following conditions: line width L ≤ 10 μm and line spacing S ≤ 10 μm.

[0044] The present invention does not require that the line width and line spacing of conductive lines be less than or equal to 10 μm. L≤10 μm and S≤10 μm are only preferred technical solutions for high-density wiring scenarios. The line width and line spacing can be adapted to meet the current carrying capacity and wiring density requirements of the product. Different line specifications can be fabricated into an integrated TGV substrate through the stacked co-firing and vertical cutting process of this application, and the process has a wide range of adaptability.

[0045] A glass-metal integrated TGV substrate is prepared by the above-described method, comprising a glass substrate; And copper foil circuits embedded in the glass substrate, wherein the copper foil circuits are formed by pre-forming conductive circuits from copper foil through a material forming process and then covering the glass substrate, the surface of the copper foil circuits has a metal film layer, and the copper foil circuits are bonded to the glass substrate through the metal film layer; The substrate has a cut surface that exposes a cross-section of the copper foil circuit, the cross-section extending through the thickness direction of the substrate.

[0046] The technical solution of the present invention will be further described in detail below with reference to embodiments and comparative examples, but the present invention is not limited to the following embodiments. All raw materials used in the embodiments are commercially available products, and all equipment used is conventional equipment in the art.

[0047] Example 1 This embodiment provides a method for fabricating a glass-metal integrated TGV substrate using a continuous furnace process, including the following steps: S1: Provides 10 Corning AF32 glass substrates, with dimensions of 50mm×50mm×0.32mm, and performs ultrapure cleaning and drying treatment.

[0048] S2: Provides a 70mm×70mm×0.01mm copper foil, on which fine interconnected conductive lines are fabricated using a precision etching process. The line width L and line spacing S are both 8μm, i.e., L / S=8 / 8μm. The copper foil size is extended to 70mm×70mm to facilitate stacking and positioning clamping, while the 50mm×50mm glass substrate is placed in the center.

[0049] S3: A 50nm Ti metal film is sputtered onto the surface of a copper foil with conductive lines using a magnetron sputtering process.

[0050] S4: Ten glass substrates and nine copper foils sputtered with Ti layers are stacked alternately in sequence. The stacking structure is glass / copper / glass / copper / ... / glass (symmetrical structure, with the outermost layer being glass). The layers are precisely positioned using a positioning system.

[0051] S5: Place the stacked body into the graphite mold and apply pressure to fix it.

[0052] S6: The graphite mold is placed in a nitrogen-protected continuous furnace for sintering at a heating temperature of 850°C and a feed rate of 1.5 in / min. It is then cooled to room temperature in the furnace to complete the fabrication of the glass / copper monolith.

[0053] S7: Using diamond wire, the glass / copper integrated block is cut into TGV sheets with a thickness of approximately 0.5mm along the stacking direction of the laminate (i.e., perpendicular to the bonding surface between the glass and copper foil). The cut surface exposes the copper circuit cross-section, forming an interconnect channel that runs through the thickness direction of the substrate.

[0054] S8: Use CMP equipment to flatten the surface of the TGV sheet and remove the edges and corners.

[0055] The performance of the TGV substrate prepared in this embodiment was tested, and the results are shown in Table 1.

[0056] Table 1 Performance data of TGV substrates prepared in Example 1

[0057] Table 1 Data Description: The aspect ratio, interface bonding force, and conduction resistance of this embodiment are significantly better than those of traditional electroplated TGV, and no through-hole void defects are generated.

[0058] Example 2 This embodiment provides a method for fabricating a glass-metal integrated TGV substrate, employing a batch furnace process and thickened copper foil, including the following steps: S1: Provides 21 Corning AF32 glass substrates, with dimensions of 50mm×50mm×0.32mm, and undergoes ultrapure cleaning and drying treatment.

[0059] S2: Provide 20 pieces of copper foil with a diameter of 70mm×70mm×0.05mm. The copper foil is stamped into fine interconnect conductive lines by stamping. The line width L and the line spacing S are both 15μm, that is, L / S=15 / 15μm.

[0060] S3: A 50nm Ti metal film is sputtered onto the surface of a copper foil with conductive lines using a magnetron sputtering process.

[0061] S4: 21 glass substrates and 20 copper foils sputtered with Ti layers are stacked alternately in sequence, with the stack structure being glass / copper / glass / copper / ... / glass, and the layers are precisely positioned using a positioning system.

[0062] S5: Place the stacked body into a stainless steel mold and apply pressure to fix it.

[0063] S6: Place the stainless steel mold in a nitrogen-protected intermittent furnace for sintering at 900℃ for 30 minutes. Cool to room temperature with the furnace to complete the fabrication of the glass / copper integrated block.

[0064] S7: Using a water jet cutter, cut the glass / copper integrated block along the direction perpendicular to the stacking of the laminate into TGV sheets with a thickness of approximately 0.5mm.

[0065] S8: Use CMP equipment to flatten the surface of the TGV sheet and remove the edges and corners.

[0066] The performance of the TGV substrate prepared in this embodiment was tested, and the results are shown in Table 2.

[0067] Table 2 Performance data of TGV substrates prepared in Example 2

[0068] Example 2 uses 0.05mm thick copper foil in combination with stamping and intermittent furnace processes, which contrasts with the 0.01mm thin copper foil in Example 1 in combination with etching and continuous furnace processes. This demonstrates the flexibility of the process window of the present invention: thin copper foil can achieve finer lines (etching L / S=8 / 8μm), while thick copper foil (5 times thicker) can achieve greater current carrying capacity. Both furnace types can achieve excellent bonding strength and reliability.

[0069] It should be noted that in Example 2, a 0.05mm thick copper foil is used in conjunction with a stamping process. The circuit accuracy of 15 / 15μm is mainly limited by the resolution of the stamping process. If an etching process is used, a circuit accuracy of less than 10 / 10μm can also be achieved. Example 2 aims to demonstrate the wide applicability of the present invention to different copper foil thicknesses and different material forming processes.

[0070] Table 2 Data Explanation: The thickened copper foil stamping solution has stronger current carrying capacity, while maintaining a high level of interfacial bonding and thermal cycling reliability.

[0071] Comparative Example 1 (Traditional TGV process) This comparative example uses the traditional TGV (LIDE route + sputtering + electroplating) process and is compared with Example 1 in the same specifications.

[0072] Process steps: Using Corning AF32 glass substrate (0.32mm thick), the following steps were performed in sequence: glass substrate cleaning and drying, femtosecond / picosecond laser-induced modification, HF system (1:4~1:10) wet etching to form φ60μm vias, cleaning + plasma activation (O2 / CF4), magnetron sputtering seed layer (Ti / Cu), photolithography + pulse electroplating to fill vias, CMP polishing, RDL photolithography + electroplating + etching, bump fabrication + temporary bonding of bottom RDL + debonding, finally obtaining TGV substrate.

[0073] Cross-sectional inspection of the TGV substrate prepared in this comparative example revealed that electroplating shrinkage occurred in the deep hole areas of 3 out of 160 φ60μm through holes, with a shrinkage rate of approximately 1.9%.

[0074] Table 3 Performance comparison between Comparative Example 1 and Example 1

[0075] As shown in Table 3, the present invention outperforms the traditional TGV process in five aspects: line refinement, aspect ratio, bonding strength, conduction resistance, and warpage, and avoids the biggest technical bottleneck of electroplating filling.

[0076] Comparative Example 2 (Ti layer omitted) This comparative example uses the exact same process steps and parameters as Example 1, the only difference being that in step S3, the sputtering of the Ti metal film layer is omitted, and the copper foil is directly stacked and co-fired with the glass substrate.

[0077] Results: After co-firing at 850℃, no chemical reaction layer was formed at the copper-glass interface, and the bonding strength was only 1.8 N / cm. During the subsequent CMP planarization process, the copper foil peeled off over a large area, rendering the TGV sheet unusable and making it impossible to produce a qualified TGV substrate.

[0078] This comparative example demonstrates that forming a Ti (or other metal with an affinity for glass) interlayer in step S3 is a necessary technical means to achieve "glass-metal integration" and cannot be omitted.

[0079] Comparative Example 3 (Incorrect Cutting Direction) This comparative example uses the exact same process steps and parameters as Example 1, the only difference being that in step S7 the cutting direction is changed to be parallel to the laminated joint surface (i.e., lateral slicing, rather than cutting perpendicular to the laminated direction).

[0080] Result: After slicing, the exposed surfaces are the glass cross-section and the "end face" of the copper foil (an extremely narrow strip cross-section), which cannot form the vertical interconnect structure required for TGV thin films - the copper lines are not fully exposed by the cut surface, and the electrical interconnect function that runs through the thickness of the substrate cannot be realized.

[0081] This comparative example demonstrates that "cutting along the direction perpendicular to the stacking of the stack" in step S7 is a key technical feature for realizing the TGV function, and the cutting direction cannot be changed.

[0082] In summary The above embodiments and comparative examples demonstrate that the present invention, through the technical path of "copper foil prefabrication of fine circuits → stacking and co-firing → vertical cutting", effectively solves the technical problems of difficult electroplating and filling of holes, limited aspect ratio, and poor bonding in traditional TGV processes. It realizes glass-metal integrated TGV substrates with fine circuits (L / S≤10 / 10μm), high aspect ratio (≥100:1), and high bonding (≥8N / cm), and has good prospects for industrial application.

[0083] Any aspects of this invention not described in detail are well-known to those skilled in the art.

[0084] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A method for fabricating a glass-metal integrated TGV substrate, characterized in that, Includes the following steps: S1: Provide copper foil and fabricate conductive lines on the copper foil using a material forming process; S2: Form a metal film layer on the surface of a copper foil with conductive lines; S3: Provide a glass substrate, and alternately stack the glass substrate and copper foil with the metal film layer formed on its surface to form a stacked body; S4: The laminate is placed in a mold and subjected to a pressure of 0.5MPa to 5MPa. Under an inert protective atmosphere with an oxygen content of ≤10ppm, it is heated to 850℃ to 900℃ at a heating rate of 5℃ / min to 15℃ / min and held for 10min to 60min to fuse adjacent glass substrates together. After cooling, a glass-metal composite block is formed. S5: Cut the glass-metal composite block along the stacking direction perpendicular to the stacked body to form a substrate sheet; wherein, perpendicular to the stacking direction means that the cutting plane is parallel to the surface of a single glass substrate. S6: Grind and smooth the cut surface of the substrate sheet to remove the cutting damage layer and surface burrs, and obtain the TGV substrate semi-finished product.

2. The method for fabricating a glass-metal integrated TGV substrate according to claim 1, characterized in that, The thickness of the copper foil is 0.01 mm to 0.05 mm.

3. The method for fabricating a glass-metal integrated TGV substrate according to claim 1, characterized in that, The material forming process includes, but is not limited to, stamping, etching, or laser processing; the conductive circuit includes, but is not limited to, straight lines, curved lines, or interconnected lines.

4. The method for fabricating a glass-metal integrated TGV substrate according to claim 1, characterized in that, The metal film layer is formed by processes including but not limited to physical vapor deposition, chemical vapor deposition, atomic layer deposition, or evaporation. The material of the metal film layer is a metal with an affinity for glass, including but not limited to Ti or Cr; The thickness of the metal film is 1 nm to 100 nm.

5. The method for fabricating a glass-metal integrated TGV substrate according to claim 1, characterized in that, The mold is made of materials including, but not limited to, ceramics, metals, or graphite that are incompatible with glass.

6. The method for fabricating a glass-metal integrated TGV substrate according to claim 1, characterized in that, The protective atmosphere is an inert gas atmosphere; the heating is carried out in an intermittent furnace or a continuous furnace.

7. The method for fabricating a glass-metal integrated TGV substrate according to claim 1, characterized in that, The cutting is performed using any one of the following methods: diamond wire cutting, water jet cutting, or blade cutting.

8. The method for fabricating a glass-metal integrated TGV substrate according to claim 1, characterized in that, The conductive circuit prepared in step S1 satisfies the following conditions: line width L≤10μm and line spacing S≤10μm.

9. A glass-metal integrated TGV substrate, prepared by the method according to any one of claims 1 to 8, characterized in that, include: Glass substrate; And copper foil circuits embedded in the glass substrate, wherein the copper foil circuits are formed by pre-forming conductive circuits from copper foil through a material forming process and then covering the glass substrate, the surface of the copper foil circuits has a metal film layer, and the copper foil circuits are bonded to the glass substrate through the metal film layer; The substrate has a cut surface that exposes a cross-section of the copper foil circuit, the cross-section extending through the thickness direction of the substrate.

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