Millimeter wave functional module and electronic device

Abstract

The application provides a millimeter wave function module and electronic equipment, and relates to the field of radio frequency and millimeter wave electronic technology.The millimeter wave function module comprises a multilayer LCP substrate, a radio frequency input module, a radio frequency output module and a millimeter wave function chip arranged on the multilayer LCP substrate;the multilayer LCP substrate is provided with a radio frequency microstrip line and a bonding wire matching structure, the radio frequency input module and the radio frequency output module are respectively electrically connected to corresponding pins of the millimeter wave function chip through the radio frequency microstrip line and the bonding wire;the bonding wire matching structure is arranged on the multilayer LCP substrate at a position corresponding to the bonding wire and is used for forming a signal transmission path with preset impedance characteristics with the bonding wire.The application can effectively suppress the parasitic effect of the bonding wire in the millimeter wave function module and improve the signal transmission performance and operation reliability of the millimeter wave function module in a high-frequency or millimeter wave application scenario.

Description

Technical Field

[0001] This invention relates to the field of radio frequency and millimeter-wave electronics technology, and more specifically, to a millimeter-wave functional module and electronic device. Background Technology

[0002] In System-In-Package (SIP) architectures, bonding wires have become the mainstream solution for chip interconnection due to their advantages of low cost and reliable manufacturing processes, and are widely used for electrical connections between chips and between chips and substrates. Compared with traditional soldering or plug-in methods, bonding wires not only have good conductivity but are also suitable for highly integrated packaging designs.

[0003] However, with the rapid development of radio frequency and millimeter wave applications, the operating frequency of circuit systems is constantly increasing. Especially in high-frequency signal transmission scenarios, the parasitic effects of bonding wires are becoming increasingly prominent, becoming a major limiting factor for signal transmission performance. In the transmission of high-frequency signals, especially in the millimeter wave band, the parasitic parameters introduced by the bonding wires prevent them from functioning as ideal conductors, leading to increased signal transmission loss, limited bandwidth, and even affecting the overall stability of the circuit. Summary of the Invention

[0004] The problem this invention addresses is how to effectively suppress bond line parasitic effects.

[0005] To address the above problems, the present invention provides a millimeter-wave functional module and an electronic device.

[0006] In a first aspect, the present invention provides a millimeter-wave functional module, including a multilayer LCP substrate, an RF input module, an RF output module, and a millimeter-wave functional chip disposed on the multilayer LCP substrate; the multilayer LCP substrate is provided with an RF microstrip line and a bonding wire matching structure, and the RF input module and the RF output module are respectively electrically connected to the corresponding pins of the millimeter-wave functional chip through the RF microstrip line and the bonding wire; the bonding wire matching structure is disposed on the multilayer LCP substrate at a position corresponding to the bonding wire, and is used to form a signal transmission path with a preset impedance characteristic with the bonding wire.

[0007] Optionally, the multilayer LCP substrate includes stacked LCP dielectric layers and conductor layers, the thickness of each LCP dielectric layer being less than or equal to a preset cavity process threshold; the multilayer LCP substrate is provided with a cavity structure, and the millimeter-wave functional chip is embedded in the cavity structure.

[0008] Optionally, the millimeter-wave functional module further includes a power conversion module, and the multilayer LCP substrate is also provided with power supply traces. The power conversion module is electrically connected to the power supply pins of the millimeter-wave functional chip through the power supply traces and the bonding wires.

[0009] Optionally, the bonding wire matching structure includes an equivalent capacitance structure disposed at the corresponding position of the bonding wire, the equivalent capacitance structure being formed by at least one of the conductor layer of the multilayer LCP substrate, the RF microstrip line, or the pad structure; and / or, the bonding wire matching structure includes a first defect ground structure disposed at the corresponding position of the bonding wire in the conductor layer for grounding.

[0010] Optionally, the RF input module includes a first coaxial connector for receiving RF signals, the first coaxial connector being electrically connected to the RF input pin of the millimeter-wave functional chip via the RF microstrip line and the bonding wire; the conductor layer of the multilayer LCP substrate corresponding to the connection between the first coaxial connector and the RF microstrip line is provided with a second defect ground structure. And / or, the RF output module includes a second coaxial connector for outputting RF signals, the second coaxial connector being electrically connected to the RF output pin of the millimeter-wave functional chip via the RF microstrip line and the bonding wire; the conductor layer of the multilayer LCP substrate corresponding to the connection between the second coaxial connector and the RF microstrip line is provided with a third defect ground structure.

[0011] Optionally, the millimeter-wave functional module further includes a packaging housing, the packaging housing having an internal mounting cavity for accommodating the multilayer LCP substrate and the millimeter-wave functional chip, and the sidewall of the packaging housing having a mounting hole adapted to at least one of the first coaxial connector and the second coaxial connector, the mounting hole communicating with the mounting cavity.

[0012] Optionally, the radio frequency microstrip line is formed by a conductor layer for signal transmission disposed on the surface of the multilayer LCP substrate, and a conductor layer for grounding disposed inside or on the back of the multilayer LCP substrate.

[0013] Optionally, the millimeter-wave functional chip includes at least one of a low-noise amplifier chip, a mixer chip, a driver amplifier chip, and a radio frequency switch chip.

[0014] Optionally, the power conversion module includes a power decoupling and filtering circuit. The input terminal of the power decoupling and filtering circuit is used to connect to a power supply, and the output terminal of the power decoupling and filtering circuit is electrically connected to the power supply pin of the millimeter-wave functional chip through the power supply trace and the bonding wire.

[0015] In a second aspect, the present invention also provides an electronic device including a millimeter-wave functional module as described in the first aspect.

[0016] Compared with the prior art, the present invention has the following advantages: The millimeter-wave functional module of the present invention is based on radio frequency microstrip lines disposed on a multilayer LCP substrate and adopts a bonding wire interconnection process, so that a stable high-frequency signal transmission path is formed between the millimeter-wave functional chip and the radio frequency input module and the radio frequency output module. At the same time, by setting bonding wire matching structures at the corresponding positions of the bonding wires on the multilayer LCP substrate, the bonding wires and bonding wire matching structures participate in signal transmission electrically in cooperation, and together form a signal transmission path with preset impedance characteristics. This creates a relatively continuous and stable impedance environment between the millimeter-wave functional chip and the radio frequency microstrip line, so as to meet the requirements of low loss and high efficiency transmission of radio frequency or millimeter-wave signals inside the millimeter-wave functional module, and reduce or suppress the impact of impedance changes caused by bonding wire parasitic parameters on high-frequency signal transmission. This helps to reduce signal reflection and additional loss in the bonding wire connection area, improve the transmission integrity and stability of high-frequency signals inside the millimeter-wave functional module, and thus improve the overall signal transmission performance and operational reliability of the millimeter-wave functional module in high-frequency or millimeter-wave application scenarios. Attached Figure Description

[0017] Figure 1 This is a cross-sectional view of a portion of the structure of the millimeter-wave functional module in an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of the millimeter-wave functional chip disposed on a multilayer LCP substrate in an embodiment of the present invention; Figure 3 This is a scanning electron microscope image of a double-layer LCP substrate in a related technology; Figure 4 This is a scanning electron microscope image of a multilayer LCP substrate in an embodiment of the present invention; Figure 5 This is an exploded structural diagram of a millimeter-wave functional module in an embodiment of the present invention; Figure 6 This is a partial structural diagram of the millimeter-wave functional module in an embodiment of the present invention.

[0018] Figure label: 1. Multilayer LCP substrate; 11. LCP dielectric layer; 12. Conductor layer; 13. Adhesive layer; 14. Open cavity structure; 2. RF input module; 21. First coaxial connector; 3. RF output module; 4. Millimeter wave functional chip; 5. RF microstrip line; 6. Bonding wire; 7. Package housing; 71. Mounting cavity; 72. Mounting hole. Detailed Implementation

[0019] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0020] It should be noted that the terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in sequences other than those illustrated or described herein.

[0021] Combination Figure 1 , Figure 2 As shown, this embodiment of the invention provides a millimeter-wave functional module, including a multilayer LCP substrate 1, an RF input module 2, an RF output module 3, and a millimeter-wave functional chip 4 disposed on the multilayer LCP substrate 1. The multilayer LCP substrate 1 is provided with an RF microstrip line 5 and a bonding wire matching structure. The RF input module 2 and the RF output module 3 are electrically connected to the corresponding pins of the millimeter-wave functional chip 4 through the RF microstrip line 5 and the bonding wire 6, respectively. The bonding wire matching structure is disposed on the multilayer LCP substrate 1 at a position corresponding to the bonding wire 6, and is used to form a signal transmission path with a preset impedance characteristic with the bonding wire 6.

[0022] In this embodiment, the millimeter wave functional module can be applied to high-frequency signal transmission scenarios, and is particularly suitable for functions such as receiving, processing and transmitting radio frequency or millimeter wave signals.

[0023] The multilayer LCP substrate 1 of the millimeter-wave functional module serves as a carrier, providing physical support and electrical connection for the millimeter-wave functional chip 4 and other devices mounted on it, thereby improving the structural stability and operational reliability of the millimeter-wave functional module during operation. The multilayer LCP substrate 1 is equipped with radio frequency (RF) microstrip lines 5 for high-frequency signal transmission. The RF microstrip lines 5 can be designed to meet the requirements of low-loss and high-efficiency transmission of high-frequency signals. The corresponding signal receiving pins of the millimeter-wave functional chip 4 are electrically connected to the RF microstrip lines 5 connected to the RF input module 2 via bonding wires 6. The corresponding signal transmitting pins of the millimeter-wave functional chip 4 are also electrically connected to the RF microstrip lines 5 connected to the RF output module 3 via bonding wires 6. The RF input module 2 receives external RF signals and transmits them to the corresponding signal receiving pins (as signal input terminals) of the millimeter-wave functional chip 4 via the corresponding RF microstrip lines 5 and bonding wires 6. After processing by the millimeter-wave functional chip 4, the processed signals are transmitted to the RF output module 3 via the corresponding signal transmitting pins, bonding wires 6, and RF microstrip lines 5 for output to the outside.

[0024] Considering that the bonding wire 6 introduces non-negligible parasitic parameters (such as parasitic inductance and the resulting impedance discontinuity) during high-frequency signal transmission, which may adversely affect the high-frequency signal transmission performance between the millimeter-wave functional chip 4 and the RF microstrip line 5, in this embodiment, the millimeter-wave functional module is also provided with a bonding wire matching structure on the multilayer LCP substrate 1. The bonding wire matching structure is located on the multilayer LCP substrate 1 at a position adjacent to or corresponding to the corresponding bonding wire 6, and electrically cooperates with the bonding wire 6 to jointly participate in the signal transmission process, so as to form a signal transmission path with preset impedance characteristics between the millimeter-wave functional chip 4 and the RF microstrip line 5. This creates a relatively continuous and stable impedance environment between the millimeter-wave functional chip 4 and the RF microstrip line 5, reduces the impact of impedance abrupt changes caused by the parasitic parameters of the bonding wire 6 on high-frequency signal transmission, and helps to reduce the reflection and additional loss of high-frequency signals in the connection area of ​​the bonding wire 6, thereby improving the integrity and stability of signal transmission. In high-frequency or millimeter-wave applications, the electrical synergy between the bonding wire matching structure and the bonding wire 6 can mitigate the adverse effects of the parasitic parameters of the bonding wire 6 on high-frequency signal transmission performance to a certain extent, making the signal transmission between the millimeter-wave functional chip 4 and the RF microstrip line 5 more stable and reliable. The bonding wire matching structure can be directly electrically connected to the bonding wire 6 to participate in the signal transmission process, or it can be located in the vicinity of the bonding wire 6 and participate in the signal transmission process through electromagnetic coupling or equivalent electrical effects. This allows the bonding wire matching structure and the bonding wire 6 to jointly form a signal transmission path, and the equivalent impedance characteristics of the signal transmission path are determined collaboratively by the bonding wire 6 and the bonding wire matching structure. In some embodiments, by selecting a bonding wire matching structure with corresponding electrical characteristics and configuring it in conjunction with the corresponding bonding wire 6, a signal transmission path that meets preset impedance characteristics can be obtained, thereby adjusting the parasitic parameters of the bonding wire 6 and reducing its adverse effects on high-frequency signal transmission performance.

[0025] In summary, the millimeter-wave functional module is based on the RF microstrip line 5 disposed on the multilayer LCP substrate 1 and interconnected using bonding wires 6, forming a stable high-frequency signal transmission path between the millimeter-wave functional chip 4, the RF input module 2, and the RF output module 3. Simultaneously, by setting bonding wire matching structures at positions corresponding to bonding wires 6 on the multilayer LCP substrate 1, bonding wires 6 and bonding wire matching structures electrically cooperate in signal transmission, jointly forming a signal transmission path with preset impedance characteristics. This creates a relatively continuous and stable impedance environment between the millimeter-wave functional chip 4 and the RF microstrip line 5, meeting the requirements for low-loss and high-efficiency transmission of RF or millimeter-wave signals within the millimeter-wave functional module. It also reduces or suppresses the impact of impedance abrupt changes caused by parasitic parameters of bonding wires 6 on high-frequency signal transmission, which helps reduce signal reflection and additional losses in the bonding wire 6 connection area, improves the transmission integrity and stability of high-frequency signals within the millimeter-wave functional module, and thus enhances the overall signal transmission performance and operational reliability of the millimeter-wave functional module in high-frequency or millimeter-wave application scenarios.

[0026] Optionally, combined Figure 1 , Figure 2 As shown, the multilayer LCP substrate 1 includes a stacked LCP dielectric layer 11 and a conductor layer 12. The thickness of each LCP dielectric layer 11 is less than or equal to a preset cavity process threshold. The multilayer LCP substrate 1 is provided with a cavity structure 14, and the millimeter-wave functional chip 4 is embedded in the cavity structure 14.

[0027] In this embodiment, the multilayer LCP substrate 1 includes stacked LCP dielectric layers 11 and conductor layers 12. The LCP dielectric layers 11 provide electrical insulation and dielectric support, while the conductor layers 12 form signal transmission lines and ground reference structures. To meet the miniaturization and high-frequency performance requirements of the millimeter-wave functional module, the thickness of each LCP dielectric layer 11 is designed to be less than or equal to a preset cavity opening process threshold. This allows the substrate 1 to achieve high processing accuracy and small structural errors during the processing of the cavity structure 14, thereby facilitating precise cavity structure control. Based on this, the multilayer LCP substrate 1 is provided with cavity structures 14. The cavity structures 14 can be formed by laser processing, machining, or other cavity opening processes suitable for LCP materials, creating a accommodating space within the substrate 1 for the millimeter-wave functional chip 4 to be housed therein. The millimeter-wave functional chip 4 is embedded within the open cavity structure 14, placing it at least partially inside the substrate 1. This brings the pads of the millimeter-wave functional chip 4 closer to the RF microstrip line 5 on the surface of the substrate 1, reducing the spatial distance between the millimeter-wave functional chip 4 and the RF microstrip line 5, and thus shortening the length of the bonding wire 6. During high-frequency or millimeter-wave signal transmission, the shortened bonding wire 6 effectively reduces the impact of its parasitic inductance and related parasitic parameters, thereby mitigating impedance discontinuities caused by the bonding wire 6. Furthermore, embedding the millimeter-wave functional chip 4 within the open cavity structure 14 also reduces the overall module height to some extent, improving structural compactness and enhancing the efficiency of the heat conduction path, thereby improving the performance stability and reliability of the millimeter-wave functional module in high-frequency applications.

[0028] The preset cavity opening process threshold refers to the maximum allowable range of LCP dielectric layer 11 thickness under predetermined cavity opening process conditions (e.g., limited by comprehensive factors such as laser cavity opening process parameters, material properties, and equipment precision) to ensure controllable sidewall morphology of the cavity structure 14 and meet preset precision requirements. In other words, when the thickness of the LCP dielectric layer 11 is not greater than this threshold, structural errors such as sidewall tilting and dielectric residue generated during the cavity opening process can be effectively reduced, thereby making the boundary of the cavity structure 14 closer to the design shape and helping to reduce the distance from the top transmission line to the cavity edge. In some embodiments, the preset cavity opening process threshold can be set according to the specific cavity opening process type and processing equipment capabilities. For example, under laser cavity opening process conditions, this threshold can be approximately 30 μm, but it is not limited to this.

[0029] For example, the double-layer LCP substrate used in related technologies (such as...) Figure 3As shown in the figure, to ensure overall hardness, an LCP dielectric layer 11 with a thickness of approximately 100 μm is typically used. However, thicker dielectric layers are prone to trapezoidal dielectric residues during laser cavity opening. Electron microscopy results show that the distance from the top transmission line (top conductor layer 12) to the edge of the corresponding cavity structure 14 is approximately 125.9 μm. In contrast, this embodiment uses a multilayer LCP substrate 1, such as a four-layer LCP substrate (e.g., ...). Figure 4 As shown in Figure 4, the thickness of each LCP dielectric layer 11 is less than or equal to the preset cavity process threshold (e.g., the cavity process threshold is 30 μm), specifically, a thin LCP dielectric material with a thickness of approximately 25 μm can be used. Through this multi-layer stacked structure, while ensuring the overall mechanical strength of the substrate, it also provides more flexible multi-layer wiring capabilities, thus laying the foundation for the miniaturization design of millimeter-wave functional modules. Furthermore, as shown in Figure 4, due to the reduced thickness of the LCP dielectric layer 11, the cavity process error is also reduced, resulting in a reduction of the distance from the top transmission line to the edge of the cavity structure 14 to approximately 36.6 μm, a reduction of approximately 89.3 μm compared to the aforementioned double-layer LCP substrate. This significantly reduces the spatial spacing between the pins (or pads) of the millimeter-wave functional chip 4 and the transmission lines, thereby effectively shortening the span of the bonding wire 6 during wire bonding. The shortening of the bonding wire 6 helps to reduce the influence of its parasitic inductance and related parasitic parameters, thereby reducing the impedance discontinuity problem introduced by the bonding wire 6, which is more conducive to achieving low-loss and high-integrity transmission of millimeter-wave band signals.

[0030] The LCP dielectric layer 11 provides electrical insulation and dielectric support. Its material is liquid crystal polymer (LCP), which effectively utilizes the low and stable dielectric constant, low dielectric loss, and low water absorption of LCP material. This makes the transmission environment of high-frequency signals in the multilayer LCP substrate 1 more stable, reducing the impact of dielectric loss and environmental changes on signal transmission performance, thus providing reliable electromagnetic foundation conditions for high-frequency or millimeter-wave signal transmission. The conductor layer 12 (e.g., copper-clad laminate) is disposed on one side or opposite sides of the LCP dielectric layer 11, forming high-frequency signal transmission lines or reference conductor structures (e.g., reference ground). By stacking the LCP dielectric layer 11 and conductor layer 12, the multilayer LCP substrate can meet the dielectric performance requirements of high-frequency signal transmission while providing the necessary conductive structure for signal traces and chip interconnects. In some embodiments, the specific number of LCP dielectric layers 11, their arrangement order, and thickness parameters of the conductor layer 12 can be designed and adjusted according to actual application requirements.

[0031] For example, combined Figure 1 , Figure 2As shown, the following explanation uses a four-layer LCP substrate as an example for the fabrication of a multilayer LCP substrate. The fabrication of a four-layer LCP substrate can utilize LCP copper-clad laminates (such as the RF-705S type double-sided LCP copper-clad laminate, i.e., one LCP dielectric layer 11 with double-sided conductor layers 12) and LCP prepregs (such as the R-BM17 type prepreg, serving as the adhesive layer 13 between different substrates of the multilayer LCP substrate) as base materials. During the fabrication process, the outer layers are first processed by etching two double-sided copper-clad LCP copper-clad laminates into single-sided copper-clad structures, serving as the two outer layers of the four-layer LCP substrate. Next, the inner layers are processed by using a developing-etching-stripping (DES) process on one of the double-sided copper-clad LCP copper-clad laminates used as the inner layer substrate of the four-layer LCP substrate. The conductor layers 12 on the upper and lower surfaces are patterned to form a predetermined inner conductor structure, thereby completing the fabrication of the inner substrate between the two outer substrates of the four-layer LCP substrate. Subsequently, a lamination process is performed, and an adhesive layer (i.e., LCP prepreg) is placed between the outer substrate and the inner substrate. The outer substrate, inner substrate, and adhesive layer are aligned and stacked in a predetermined stacking order, and the above-mentioned layer structures are pressed together by a lamination process to form a four-layer LCP substrate. Then, further outer layer processing is performed. A YAG ultraviolet laser can be used to perform through-hole processing and etching of the chip corresponding cavity structure 14 on the four-layer LCP substrate to complete the fabrication of the four-layer LCP substrate. In the process of fabricating through-holes (with conductive material electroplated into the through-holes) and etching the cavity structure 14 on the four-layer LCP substrate, the processing can be carried out according to the preset impedance characteristics of the required signal transmission path. The position and size of the through-holes and the geometry of the cavity structure 14 are designed and processed accordingly, so that after the chip is mounted on the cavity structure 14, its pins form a signal transmission path that meets the preset impedance requirements between the high-frequency signal transmission lines in the multilayer LCP substrate. Therefore, by combining the synergistic design of the through-hole structure and the cavity structure 14 in the fabrication process of the multilayer LCP substrate, not only can the structural requirements of chip packaging and interconnection be met, but it is also beneficial to build a stable and continuous high-frequency impedance environment between the chip and the multilayer LCP substrate, thereby providing a good electromagnetic foundation for subsequent high-frequency signal interconnection via bonding wires.

[0032] Optionally, the millimeter-wave functional module also includes a power conversion module. The multilayer LCP substrate 1 is also provided with power supply traces. The power conversion module and the power supply pins of the millimeter-wave functional chip 4 are electrically connected through the power supply traces and bonding wires 6.

[0033] In this embodiment, the power supply pins of the millimeter-wave functional chip 4 are electrically connected to power supply traces on the multilayer LCP substrate 1 via bonding wires 6. These power supply traces are further electrically connected to the output of the power conversion module, thus providing power to the millimeter-wave functional chip 4. By routing the power supply traces on the multilayer LCP substrate 1 and connecting them to the chip's power supply pins using bonding wires 6, the reliability of the power supply path can be ensured while maintaining the compactness and integration of the overall module structure. This facilitates the formation of a stable and controllable power supply network within the millimeter-wave functional module. In high-frequency or millimeter-wave application scenarios, this power supply method also facilitates optimization of the power supply trace layout to reduce the impact of parasitic parameters that may be introduced into the power supply path on radio frequency or millimeter-wave signal transmission, thereby improving the stability and reliability of the millimeter-wave functional module during operation.

[0034] Optionally, the power conversion module includes a power decoupling and filtering circuit. The input terminal of the power decoupling and filtering circuit is used to connect to the power supply, and the output terminal of the power decoupling and filtering circuit is electrically connected to the power supply pin of the millimeter-wave functional chip 4 through power supply traces and bonding wires 6.

[0035] In this embodiment, the power conversion module is equipped with a power decoupling and filtering circuit. The input terminal of the power decoupling and filtering circuit is used to receive the power supply signal from the external power supply or the system power supply, and to decouple and filter the input power supply signal to suppress ripple, voltage fluctuation and high-frequency noise in the power supply, thereby forming a relatively stable power supply signal at the output terminal of the power decoupling and filtering circuit, providing a relatively stable and reliable power supply condition for the millimeter wave functional chip 4.

[0036] For example, the output of the power decoupling and filtering circuit is electrically connected to the power supply pin of the millimeter-wave functional chip 4 via a power supply trace disposed on the multilayer LCP substrate 1, and an electrical connection is achieved between the power supply trace and the power supply pin of the millimeter-wave functional chip 4 via a bonding wire 6, thereby forming a power supply path from the power decoupling and filtering circuit to the power supply pin of the millimeter-wave functional chip 4. By setting the power decoupling and filtering circuit in the power conversion module, and combining it with the power supply trace and bonding wire 6 on the multilayer LCP substrate 1 for power supply connection, it is beneficial to reduce the possibility of power supply noise coupling to the millimeter-wave functional chip 4 through the power supply path, reduce the adverse effects of power supply interference on the RF or millimeter-wave signal processing, thereby improving the power supply stability and overall operational reliability of the millimeter-wave functional module in high-frequency or millimeter-wave application scenarios.

[0037] Optionally, combined Figure 1 , Figure 5 and Figure 6As shown, the millimeter-wave functional module also includes a package housing 7. The package housing 7 has a mounting cavity 71 inside for accommodating the multilayer LCP substrate 1 and the millimeter-wave functional chip 4. The side wall of the package housing 7 has a mounting hole 72 that is adapted to at least one of the first coaxial connector 21 and the second coaxial connector. The mounting hole 72 communicates with the mounting cavity 71.

[0038] In this embodiment, the millimeter-wave functional module also includes a housing 7, which can be used to encapsulate, protect, and electromagnetically shield the internal structure of the module. The housing 7 has a mounting cavity 71 inside, where the multilayer LCP substrate 1 and the millimeter-wave functional chip 4 disposed thereon are arranged. This creates a relatively independent and stable working space under the enclosure of the housing 7, which helps reduce the impact of the external environment on high-frequency signal transmission and improves the overall structural stability and operational reliability of the module. Furthermore, the sidewall of the housing 7 has mounting holes 72 that communicate with the mounting cavity 71, for installation with the first coaxial connector 21 and / or the second coaxial connector. For example, the first coaxial connector 21 and the second coaxial connector can be respectively embedded in the corresponding mounting holes 72 and fixedly connected to the housing 7 by a fastening structure (such as threaded connection, press fitting, or welding), allowing the inner conductor of the coaxial connector to extend into the mounting cavity 71 and achieve electrical connection with the RF microstrip line 5 on the multilayer LCP substrate 1. With the above structural design, external radio frequency signals can be directly introduced or output to the module through the coaxial connector, and the transmission path is relatively short, which helps to reduce additional losses and reflections in the interface area. In addition, by providing mounting holes 72 on the side wall of the package housing 7 that are compatible with the coaxial connector, it is not only convenient to position and fix the coaxial connector, but also to ensure the relative positional accuracy between the coaxial connector and the multilayer LCP substrate 1, thereby helping to optimize the impedance transition relationship between the coaxial connector and the radio frequency microstrip line 5.

[0039] Through the above packaging structure design, the millimeter-wave functional module can achieve good electromagnetic shielding while also ensuring efficient transmission of radio frequency signals and structural integration, which is conducive to improving the overall performance of the millimeter-wave functional module in high-frequency or millimeter-wave application scenarios.

[0040] For example, combined Figure 6 The diagram shown is a partial structural schematic of the millimeter-wave functional module, in which... Figure 6 (a) is a partial structural diagram of the millimeter-wave functional module. Figure 6 (b) is Figure 6 (a) is a schematic diagram of the structure of the multilayer conductor layer 12 of the multilayer LCP substrate 1 corresponding to the area highlighted in (a). For example... Figure 6As shown in (a), the millimeter-wave functional module includes a first coaxial connector 21 for connection to external RF devices. The first coaxial connector 21 can be a 2.92mm connector or other RF connector structures suitable for the millimeter-wave band. The first coaxial connector 21 is mounted on the sidewall of the package housing and fixed to the package housing by a mounting structure. One end of its inner conductor extends into the corresponding mounting hole 72 to electrically connect with the corresponding RF transmission path (or RF microstrip line 5) on the multilayer LCP substrate 1, thereby enabling the introduction of external RF signals into the module. Figure 6 As shown in (b), the stacked structure and distribution of defect ground structures of the multilayer LCP substrate 1 are illustrated. Different forms of second defect ground structures, such as slotted structures or partially missing structures, are provided in each conductor layer 12 of the multilayer LCP substrate 1, altering the electromagnetic characteristics of the ground conductor layer in that region, thereby adjusting the equivalent impedance of the RF signal transmission path. In the transition region between the coaxial connector and the RF microstrip line 5, impedance discontinuities and reflections are easily generated due to the difference in electromagnetic field distribution between the coaxial structure and the planar microstrip line structure. By providing the aforementioned defect ground structures in the ground conductor layer 12 of the corresponding region, the equivalent inductance and equivalent capacitance of that region are adjusted, thereby electrically optimizing the impedance characteristics of the signal transmission path, making the transition of the RF signal from the coaxial connector to the RF microstrip line smoother, and reducing reflections and additional losses. Furthermore, through methods such as... Figure 6 (b) As shown, the second defect ground structure is provided in different conductor layers 12 of the multilayer LCP substrate 1, which can also adjust the signal transmission characteristics in a wider frequency range, thereby adapting to the wide bandwidth and high consistency transmission requirements of the millimeter wave band. Moreover, the second defect ground structure can not only improve the signal integrity of the connection area between the coaxial connector and the RF microstrip line 5, but also work in synergy with the bonding wire matching structure to further reduce the impedance discontinuity problem in the entire coaxial connector-RF microstrip line 5-bonding wire 6-millimeter wave functional chip 4 transmission link, thereby improving the overall transmission performance and stability of the millimeter wave functional module in high frequency application scenarios.

[0041] Optionally, the enclosure 7 is made of metal, and the edges of the enclosure 7 are chamfered.

[0042] In this embodiment, the encapsulation housing 7 is made of a metallic material, such as aluminum alloy, copper alloy, or other metallic materials with good mechanical strength and electrical conductivity. Using a metallic material for the encapsulation housing 7 improves its structural strength and resistance to external impacts, and provides electromagnetic shielding to a certain extent, thereby reducing the impact of external electromagnetic interference on the millimeter-wave functional module's operation. Furthermore, the edges of the encapsulation housing 7 are chamfered, meaning chamfered structures are provided at the edges or corners of the encapsulation housing 7 to avoid sharp edges. On one hand, chamfering helps reduce stress concentration at the edges of the encapsulation housing 7, improving its overall mechanical reliability; on the other hand, in high-frequency or millimeter-wave applications, the chamfered structure improves the electromagnetic field distribution at the housing edges, reducing electromagnetic reflection or standing wave effects caused by geometric abrupt changes, thus improving the signal transmission stability and overall operational reliability of the millimeter-wave functional module.

[0043] Optionally, the interior of the enclosure 7 is gold-plated.

[0044] In this embodiment, the inner wall of the packaging housing 7 is provided with a gold-plated layer, that is, gold plating is performed on the inner surface of the packaging housing 7. By providing a gold-plated layer inside the packaging housing 7, on the one hand, the excellent conductivity and stable surface characteristics of gold material can be utilized to reduce the contact resistance and surface loss of the inner wall surface of the housing, which is conducive to forming a more stable electromagnetic environment in high-frequency or millimeter-wave application scenarios. On the other hand, the gold-plated layer has good anti-oxidation and anti-corrosion properties, which helps to slow down the performance degradation of the inner wall of the packaging housing 7 caused by environmental factors, thereby improving the reliability and consistency of the packaging housing 7 during long-term use. In addition, during the operation of the millimeter-wave functional module, the gold-plated layer inside the packaging housing 7 can also improve the electromagnetic shielding effect to a certain extent, reduce the additional loss and unnecessary reflection of electromagnetic waves generated at the inner wall of the housing, which is conducive to improving the overall signal transmission performance and operational stability of the millimeter-wave functional module in high-frequency application scenarios.

[0045] Optionally, the bonding wire matching structure includes an equivalent capacitance structure disposed at the corresponding position of the bonding wire 6, the equivalent capacitance structure being formed by at least one of the conductor layer 12 of the multilayer LCP substrate 1, the radio frequency microstrip line 5, or the pad structure; and / or, the bonding wire matching structure includes a first defect ground structure disposed at the corresponding position of the bonding wire 6 in the conductor layer 12 for grounding.

[0046] In this embodiment, the bonding wire matching structure is disposed at the position corresponding to the bonding wire 6, and is used to participate in the signal transmission process in an electrical manner in cooperation with the bonding wire 6, so as to improve the equivalent impedance characteristics of the connection area of ​​the bonding wire 6.

[0047] The bonding wire matching structure includes an equivalent capacitance structure, which can be formed by at least one of the conductor layer 12, the radio frequency microstrip line 5, or the pad structure in the multilayer LCP substrate 1. For example, different conductor layers 12, radio frequency microstrip lines 5, or pad structures form an equivalent capacitance effect in an electrical sense through their spatial distribution in the multilayer LCP substrate 1 and their electromagnetic interactions with each other. This allows the equivalent capacitance structure to work together with the bonding wire 6 during high-frequency signal transmission to participate in the formation of the equivalent electrical characteristics of the signal transmission path. Thus, compared to using physical capacitors, the equivalent capacitance structure does not require the introduction of additional independent discrete components. Instead, it forms an equivalent capacitance effect in an electrical sense through the electromagnetic coupling relationship between the existing conductor layer 12, RF microstrip line 5, or pad structure in the multilayer LCP substrate 1. This helps reduce the complexity of the package structure and the space occupied by additional components. At the same time, since the equivalent capacitance structure can be integrally formed with the multilayer LCP substrate 1, its electrical characteristics have good synergy with the spatial distribution of the RF microstrip line 5 and bonding line 6. This helps to obtain more stable equivalent impedance characteristics under high frequency or millimeter wave conditions, thereby improving the overall performance of the signal transmission path in the connection area of ​​the bonding line 6 and effectively reducing or avoiding the adverse effects of the parasitic parameters of the bonding line 6 on the signal transmission performance between the chip and the multilayer LCP substrate 1.

[0048] Alternatively, the bonding wire matching structure includes a defective ground structure (DGS; denoted as the first defective ground structure), which is disposed in the grounding conductor layer 12 (denoted as the ground conductor layer) at the position corresponding to the bonding wire 6. For example, by forming a local discontinuity structure (such as etching a periodic or aperiodic grid structure on the ground conductor layer) in the ground conductor layer as the first defective ground structure, the electromagnetic distribution state of the ground conductor layer in that region is changed, thereby having an equivalent effect to the bonding wire 6 in an electrical sense. This allows the first defective ground structure to adjust the equivalent impedance characteristics of the bonding wire 6 connection region without directly participating in signal conduction. Thus, compared to the case where no structural modulation is applied to the ground conductor layer, the first defective ground structure, by adjusting the local electromagnetic environment in the ground conductor layer, ensures that the equivalent impedance characteristics of the bonding wire 6 connection area are no longer solely determined by the bonding wire 6 itself, but rather by the synergistic influence of the bonding wire 6 and the first defective ground structure. This facilitates a smoother and more continuous impedance transition in the bonding wire 6 connection area. Simultaneously, since the first defective ground structure is located within the ground conductor layer, it can adjust the equivalent impedance characteristics of the signal transmission path without directly participating in signal conduction, thereby avoiding the introduction of additional conduction structures into the signal path and helping to maintain the integrity and stability of the high-frequency signal transmission path. Furthermore, the first defective ground structure can be integrally formed with the multilayer LCP substrate 1, and its electrical characteristics have good synergy with the spatial distribution of the RF microstrip line 5 and the bonding wire 6. In high-frequency or millimeter-wave applications, this helps to obtain more stable equivalent impedance characteristics, thereby improving the overall signal transmission performance of the bonding wire 6 connection area and effectively reducing or mitigating the adverse effects of the parasitic parameters of the bonding wire 6 on the high-frequency signal transmission performance between the chip and the multilayer LCP substrate 1. Furthermore, since the first defective ground structure can modulate the equivalent impedance characteristics of the signal transmission path in the bonding line 6 connection area without directly participating in signal conduction, it can adjust the equivalent impedance characteristics of the ground conductor layer by modulating the equivalent inductance and equivalent capacitance characteristics of the ground conductor layer, making the area exhibit equivalent impedance characteristics. Therefore, compared with the method of achieving impedance adjustment by widening the signal line or introducing additional impedance transmission lines, the introduction of the first defective ground structure can achieve the required impedance adjustment effect within the limited layout space of the millimeter-wave functional module, thereby helping to reduce the on-chip area of ​​the millimeter-wave functional module and improve the miniaturization and integration level of the millimeter-wave functional module and the corresponding high-frequency circuit.

[0049] Alternatively, the bonding wire matching structure may employ both the aforementioned equivalent capacitance structure and the first defect ground structure. Through this combination, the equivalent capacitance structure and the first defect ground structure work together with the bonding wire 6 in an electrical sense, so that the equivalent impedance characteristics of the signal transmission path are no longer determined by a single structure, but by the synergistic influence of the bonding wire 6, the equivalent capacitance structure, and the first defect ground structure. This creates a continuous and stable impedance environment in the connection area of ​​the bonding wire 6, which helps to reduce or avoid the adverse effects of the parasitic parameters of the bonding wire 6 on the signal transmission performance between the chip and the multilayer LCP substrate 1.

[0050] For example, the bond wire matching structure can adopt different forms of equivalent electrical regulation methods according to different high-frequency application requirements to adapt to different operating frequency ranges and signal transmission requirements. For instance, in a corresponding high-frequency application scenario (such as the operating frequency range from DC to approximately 70 GHz), the bond wire matching structure can introduce an equivalent capacitance structure to regulate the equivalent impedance characteristics of the bond wire 6 during high-frequency signal transmission, thereby improving the impedance continuity of the bond wire 6 connection area. For high-frequency application scenarios with further increased operating frequencies (such as the frequency range from approximately 75 GHz to 110 GHz, i.e., the W-band), the bond wire matching structure can enhance its ability to regulate the parasitic effects of the bond wire 6 to adapt to higher frequency signals. For example, by introducing a first defective ground structure, the bond wire matching structure can exhibit a higher-order regulation effect in an equivalent electrical sense, thereby improving the compensation capability for high-frequency signals and broadening the frequency range for effectively regulating the parasitic effects of the bond wire 6 (such as achieving W-band ultra-wideband transmission). In this way, the bonding wire matching structure can affect the electromagnetic distribution of the bonding wire 6 connection area without directly changing the signal conduction path, making the equivalent electrical characteristics of the signal transmission path more suitable for the target high-frequency application requirements, thereby further improving the transmission performance of high-frequency signals in this area.

[0051] For example, when the bonding wire matching structure adopts an equivalent capacitance structure, the equivalent capacitance structure being located at the corresponding position of the bonding wire 6 can be understood as follows: the equivalent capacitance structure is electrically associated with the signal node connected to the bonding wire 6, enabling it to participate in the formation of the equivalent electrical characteristics of the signal transmission path together with the bonding wire 6 during high-frequency signal transmission. For example, the equivalent capacitance structure can be formed by a pad structure located at one or both ends of the bonding wire 6, a conductor structure connected to the RF microstrip line 5, or by the spatial stacking relationship between different conductor layers 12 in the multilayer LCP substrate 1, so that the equivalent capacitance structure is electrically connected in parallel or equivalent parallel with the bonding wire 6, thereby compensating for the parasitic inductance introduced by the bonding wire 6. In this case, even if the equivalent capacitance structure is not completely coincident with the bonding wire 6 in geometric position, as long as it acts electrically on the same or related signal node as the bonding wire 6, it can be regarded as being located at the corresponding position of the bonding wire 6. Similarly, when the bonding wire matching structure adopts a first defect ground structure, the placement of the first defect ground structure at the corresponding position of the bonding wire 6 can be understood as follows: the first defect ground structure is placed in the conductor layer 12 used for grounding, and is located in the electromagnetic field region affected by the bonding wire 6 in an electromagnetic sense, thus being able to adjust the equivalent electrical characteristics of the signal transmission path where the bonding wire 6 is located. For example, the first defect ground structure can be placed below, adjacent to, or in the ground conductor layer region associated with the RF microstrip line 5 of the signal path corresponding to the bonding wire 6 during high-frequency signal transmission. This allows the first defect ground structure to adjust the equivalent impedance characteristics of the bonding wire 6 connection area by changing the local electromagnetic distribution state of the ground conductor layer without directly participating in signal conduction. In this case, whether the first defect ground structure is strictly aligned with the bonding wire 6 in geometric position is not a necessary condition. As long as it can act on the signal transmission path where the bonding wire 6 is located in an electrical or electromagnetic sense, it can be considered to be placed at the corresponding position of the bonding wire 6.

[0052] Optionally, combined Figure 5 , Figure 6 As shown, the RF input module 2 includes a first coaxial connector 21 for receiving RF signals. The first coaxial connector 21 is electrically connected to the RF input pin of the millimeter-wave functional chip 4 through the RF microstrip line 5 and the bonding wire 6. The conductor layer 12 of the multilayer LCP substrate 1 corresponding to the connection between the first coaxial connector 21 and the RF microstrip line 5 is provided with a second defect ground structure. And / or, the RF output module 3 includes a second coaxial connector for outputting RF signals, the second coaxial connector being electrically connected to the RF output pin of the millimeter-wave functional chip 4 via an RF microstrip line 5 and a bonding wire 6; the conductor layer 12 of the multilayer LCP substrate 1 corresponding to the connection between the second coaxial connector and the RF microstrip line 5 is provided with a third defect ground structure.

[0053] In this embodiment, the RF input module 2 includes a first coaxial connector 21 for receiving external RF signals. The first coaxial connector 21 can be a 2.92mm coaxial connector or other coaxial interface structures suitable for high-frequency or millimeter-wave signal transmission. The first coaxial connector 21 is electrically connected to the RF input pin of the millimeter-wave functional chip 4 through the RF microstrip line 5 disposed on the multilayer LCP substrate 1, and further electrically connected to the RF input pin through the bonding wire 6, thereby forming an RF input signal transmission path from the first coaxial connector 21 through the RF microstrip line 5 and the bonding wire 6 to the millimeter-wave functional chip 4. In this transmission path, in order to improve the impedance matching of the connection area between the coaxial connector and the RF microstrip line 5, a defective ground structure (denoted as the second defective ground structure) is provided in the conductor layer 12 of the multilayer LCP substrate 1 for grounding corresponding to the connection area between the first coaxial connector 21 and the RF microstrip line 5. The second defective ground structure can be achieved by forming a slot, etching pattern or periodic / aperiodic structure of a preset shape in the ground conductor layer 12 to change the electromagnetic field distribution in the region, thereby electrically adjusting the transition impedance between the first coaxial connector 21 and the RF microstrip line 5, making the impedance change when the RF signal transitions from the coaxial structure to the planar microstrip line structure smoother, and reducing reflection and additional loss in the connection area.

[0054] And / or, the RF output module 3 includes a second coaxial connector for outputting RF signals. This second coaxial connector can also be a 2.92mm coaxial connector or other coaxial interface structures suitable for high-frequency or millimeter-wave signal transmission. The second coaxial connector is electrically connected to the RF output pin of the millimeter-wave functional chip 4 via the RF microstrip line 5 and bonding wire 6, thereby forming an RF output signal transmission path from the millimeter-wave functional chip 4 through the bonding wire 6, the RF microstrip line 5, to the second coaxial connector. Similarly, a defective ground structure (denoted as the third defective ground structure) is provided in the conductor layer 12 of the multilayer LCP substrate 1 corresponding to the connection area between the second coaxial connector and the RF microstrip line 5. This defective ground structure is used to adjust the impedance transition between the coaxial connector and the RF microstrip line 5 in the output signal path. By providing the third defective ground structure, the local equivalent inductance and capacitance characteristics of the ground conductor layer 12 can be adjusted without changing the signal conduction path, thereby improving the impedance continuity of the output path and reducing the reflection and loss of high-frequency signals at the output interface.

[0055] In the aforementioned input and output paths, by setting a second defective ground structure and a third defective ground structure in the corresponding ground conductor layer 12, targeted impedance adjustment can be achieved in the transition region between the coaxial connector and the RF microstrip line 5. This results in a more continuous and stable equivalent impedance distribution in the overall signal transmission path from the coaxial connector to the RF microstrip line, the bonding wire, and the millimeter-wave functional chip. This not only reduces the impedance discontinuity introduced during the transition between the coaxial interface and the planar transmission line, but also works synergistically with the bonding wire matching structure to further mitigate the adverse effects of the parasitic parameters of the bonding wire 6 on high-frequency signal transmission performance, thereby improving the overall signal transmission performance and operational stability of the millimeter-wave functional module in high-frequency or millimeter-wave application scenarios.

[0056] Optionally, combined Figure 1 , Figure 2 As shown, the radio frequency microstrip line 5 is formed by a conductor layer 12 for signal transmission disposed on the surface of the multilayer LCP substrate 1, and a conductor layer 12 for grounding disposed inside or on the back of the multilayer LCP substrate 1.

[0057] In this embodiment, the conductor layer 12 disposed on the surface of the multilayer LCP substrate 1 serves as a signal conductor (layer), which can extend along a predetermined trace direction to realize high-frequency signal transmission. The conductor layer 12 disposed inside or on the back of the multilayer LCP substrate 1 serves as a ground conductor layer, providing a reference potential and return path for signal transmission. Furthermore, in this RF microstrip line 5, the signal conductor and the ground conductor are isolated from each other by the dielectric layer in the multilayer LCP substrate 1. By arranging the signal conductor and the ground conductor in upper and lower layers in the multilayer LCP substrate 1, the RF microstrip line 5 forms a stable transmission line structure as a high-frequency signal transmission line in the multilayer LCP substrate 1, meeting the impedance control requirements for high-frequency signal transmission. In some embodiments, the ground conductor layer disposed inside or on the back of the multilayer LCP substrate 1 can also serve as a carrier for introducing defective ground structures. By locally designing the ground conductor layer, it can be electrically coordinated with the signal conductor and bonding wire 6 disposed on the surface of the multilayer LCP substrate 1, thereby further improving the transmission performance of high-frequency signals in the connection area between the microstrip line and the bonding wire 6.

[0058] For example, such as Figure 1 The millimeter-wave functional module shown in the dashed box has a portion of radio frequency microstrip line 5 on its multilayer LCP substrate 1. The radio frequency microstrip line 5 is formed by a conductor layer 12 for signal transmission disposed on the surface of the multilayer LCP substrate 1 and a conductor layer 12 for grounding disposed inside or on the back of the multilayer LCP substrate 1.

[0059] Optionally, the millimeter-wave functional chip 4 includes at least one of a low-noise amplifier chip, a mixer chip, a driver amplifier chip, and an RF switch chip.

[0060] In this embodiment, the millimeter-wave functional chip 4 includes at least one of a low-noise amplifier chip, a mixer chip, a driver amplifier chip, and an RF switch chip. The specific selection or combination can be set according to the application scenario and functional requirements of the millimeter-wave functional module.

[0061] When the millimeter-wave functional chip 4 uses a low-noise amplifier chip, the low-noise amplifier chip is used to amplify the weak radio frequency or millimeter-wave signal input from the radio frequency input module 2 to reduce the noise figure while ensuring signal gain. Its signal receiving pin and signal transmitting pin are electrically connected to the radio frequency microstrip line 5 on the multilayer LCP substrate 1 through bonding wires 6, and a signal transmission path with preset impedance characteristics is formed in the connection area of ​​bonding wires 6 through bonding wire matching structure, which helps to reduce the reflection and loss of high-frequency signals at the chip interface and improve the signal quality of the receiving link.

[0062] When the millimeter-wave functional chip 4 uses a mixer chip, the mixer chip is used to perform frequency conversion between the input radio frequency or millimeter-wave signal and the local oscillator signal. Its radio frequency port, intermediate frequency port and / or local oscillator port (wherein, the radio frequency port is used to input or output radio frequency or millimeter-wave signals, the intermediate frequency port is used to output or input the intermediate frequency signal after frequency conversion, and the local oscillator port is used to receive the local oscillation signal to participate in the frequency conversion process) can be electrically connected to the corresponding radio frequency microstrip line 5 through the corresponding bonding wire 6, and the impedance continuity of each port under high frequency conditions is improved through the bonding wire matching structure, which helps to reduce parasitic coupling and signal reflection between ports and improve the stability and efficiency of the frequency conversion process.

[0063] When the millimeter-wave functional chip 4 uses a driver amplifier chip, the driver amplifier chip is used to amplify the power of the processed radio frequency or millimeter-wave signal. Its signal receiving pin and signal transmitting pin are connected to the corresponding radio frequency microstrip line 5 through the corresponding bonding line 6, and a stable impedance environment is built at the bonding line 6 with the help of the bonding line matching structure. This helps to reduce the additional loss and reflection of high power high frequency signals in the interconnection area and improve the power transmission efficiency and reliability of the transmission link.

[0064] When the millimeter-wave functional chip 4 uses an RF switch chip, the RF switch chip is used to select or switch between different RF signal paths. Each of its RF ports is electrically connected to the RF microstrip line 5 on the multilayer LCP substrate 1 through the bonding wire 6. The impedance discontinuity problem caused by the parasitic parameters of the bonding wire 6 is reduced through the bonding wire matching structure, which is beneficial to maintaining the transmission consistency and stability of each signal path in high-frequency or millimeter-wave application scenarios.

[0065] When multiple types of millimeter-wave functional chips 4 are simultaneously incorporated into a millimeter-wave functional module, such as integrating a low-noise amplifier chip with a mixer chip, a driver amplifier chip, or an RF switch chip, a complete RF or millimeter-wave signal receiving link, transmitting link, or transceiver integrated link can be formed. In the above case, each millimeter-wave functional chip 4 can be connected to an RF microstrip line 5 via a bonding wire 6, and a bonding wire matching structure can be configured in the corresponding connection area, thereby forming a relatively continuous and stable impedance environment in the entire signal link, improving the overall signal transmission performance and operational reliability of the millimeter-wave functional module in high-frequency application scenarios.

[0066] To facilitate understanding, the following explanation uses millimeter-wave functional modules employing different types of millimeter-wave functional chips as examples, and verifies the effectiveness of improving high-frequency signal transmission performance through bonding wire matching structure through performance testing.

[0067] When the millimeter-wave functional chip 4 uses a low-noise amplifier chip, it can be used to construct a 22GHz–30GHz low-noise amplifier module. The low-noise amplifier chip can be a GaAs chip, operating at frequencies covering 22GHz–30GHz. It uses a single power supply, operating under +5V conditions, with a typical quiescent current of 19mA. It provides approximately 25dB of gain, approximately 10.5dBm of 1dB compressed output power, and a typical noise figure of approximately 1.6dB. The low-noise amplifier chip can utilize on-chip metallized vias to ensure good grounding performance, eliminating the need for complex grounding structures in the module package. Based on the electrical characteristics and pin definitions of the low-noise amplifier chip, a schematic diagram of the low-noise amplifier module can be built in a circuit design platform, and the physical layout design can be completed accordingly. During the layout design process, the low-noise amplifier die can be placed in the central region of the multilayer LCP substrate 1. Its RF input terminal (or RF signal receiving pin) and RF output terminal (or RF signal transmitting pin) are connected to the RF input module 2 and RF output module 3 respectively through 50Ω RF microstrip lines 5, and the electrical connection between the low-noise amplifier chip pin and the RF microstrip line 5 is achieved through bonding wires 6. At the same time, bonding wire matching structures are set on the multilayer LCP substrate 1 at the corresponding positions of bonding wires 6 to compensate for the parasitic parameters introduced by bonding wires 6 during high-frequency signal transmission, thereby improving the impedance continuity at the low-noise amplifier chip interface. In terms of packaging, a metal encapsulation cavity can be used to encapsulate the low-noise amplifier module. The metal encapsulation cavity can be made of aluminum alloy material, and the inside of the cavity is gold-plated to reduce high-frequency signal loss and enhance electromagnetic shielding performance. The RF input module 2 and / or RF output module 3 include RF connectors, adapter components, or RF interface components containing connectors, such as 2.92mm RF connectors. The edges of the encapsulation cavity are chamfered to reduce the standing wave effect generated by high-frequency or millimeter-wave signals at the cavity edges, and the bottom of the cavity is filled with thermal grease to enhance heat dissipation. Based on the aforementioned low-noise amplifier module, performance tests were conducted at 25℃, -55℃, and 125℃ using a vector network analyzer. The test results show that within the 22GHz–30GHz frequency band, the module achieves approximately 24dB of gain, approximately 2.2dB of noise figure, approximately 9dBm of output P-1dB, approximately -15dB of return loss, approximately 11dBm of saturated output power, and approximately 21dBm of output third-order intermodulation point. This verifies the effectiveness of improving high-frequency signal transmission performance through the bonded wire matching structure.

[0068] When the millimeter-wave functional chip 4 uses a mixer chip, it can be a GaAs mixer chip, forming a 20GHz–42GHz mixer module. The mixer chip's RF port (RF terminal) and local oscillator port (LO terminal) operate at frequencies covering 20GHz–42GHz, while the intermediate frequency port (IF terminal) operates at frequencies covering DC–18GHz. It features low conversion loss and good port return loss performance, and integrates DC blocking capacitors internally. The RF port is used to transmit RF or millimeter-wave signals, the local oscillator port is used to input local oscillator signals, and the intermediate frequency port is used to output or input frequency-converted intermediate frequency signals. The mixer chip can also use on-chip metallized via technology to ensure good grounding performance. The RF port, LO port, and IF port of the mixer chip can be connected to the RF microstrip line 5 or intermediate frequency trace on the multilayer LCP substrate 1 via corresponding bonding lines 6, and bonding line matching structures are set at corresponding positions on the bonding lines 6 to improve the impedance continuity of each port under high-frequency conditions and reduce port reflection and parasitic coupling. In terms of packaging, a metal enclosure is also used, with the cavity structure, materials, gold plating, RF module interface, and chamfer design similar to the aforementioned low-noise amplifier module. Performance testing was conducted using a vector network analyzer on the mixer module with the bonded wire matching structure. Test results showed that within the 20GHz–42GHz frequency band, the module's conversion loss was approximately 8dB, the input 0.5dB compression power was approximately 10dBm, the RF return loss was approximately -11dB, the IF return loss was approximately -15dB, the RF-IF isolation was approximately 25dB, the LO-RF isolation was approximately 30dB, and the LO-IF isolation was approximately 25dB. This indicates that the bonded wire matching structure is beneficial for improving the overall performance stability of the mixer module under high-frequency conditions.

[0069] When the millimeter-wave functional chip 4 uses a driver amplifier chip, it can be a GaAs driver amplifier chip, forming a 28GHz–34GHz driver amplifier module. The driver amplifier chip employs a dual-bias power supply, providing approximately 18dB gain, approximately 22dBm of 1dB compressed output power, and approximately 22.5dBm of saturated output power under +6V power supply conditions. Its drain voltage can fall back to +4.5V to meet different application requirements. The driver amplifier chip also uses on-chip metallized via technology to ensure good grounding performance. The input and output terminals of the driver amplifier chip are connected to a 50Ω RF microstrip line 5 on the multilayer LCP substrate 1 via bonding wires 6, respectively. A bonding wire matching structure is set in the connection area of ​​bonding wires 6 to improve the impedance matching of high-power, high-frequency signals in the interconnect area, reducing reflection and additional losses. The module is packaged in a metal cavity, and electromagnetic shielding and heat dissipation are achieved through internal gold plating, edge chamfering, and thermal grease filling. Test results show that within the 28GHz to 34GHz frequency band, the driver amplifier module can achieve a gain of approximately 18dB, an output P-1dB of approximately 20dBm, a return loss of approximately -15dB, and a saturation output power of approximately 21dBm, verifying the effectiveness of the bonded wire matching structure in high-frequency power amplification applications.

[0070] When the millimeter-wave functional chip 4 uses an RF switch chip, the millimeter-wave functional chip 4 can be a GaAs reflective single-pole double-throw (SPDT) RF switch chip to form a DC-40GHz RF switch module. The RF switch chip features low insertion loss, high isolation, and fast switching speed. It uses 0V / +3.3V logic control and requires an external -5V bias power supply. Its typical quiescent current is approximately 2.2mA, and its switching speed is less than 50ns. The RF switch chip also uses on-chip metallized via technology to ensure good grounding performance. Each RF port of the RF switch chip is connected to the RF microstrip line 5 on the multilayer LCP substrate 1 via bonding wires 6. Bonding wire matching structures are set at corresponding positions on the bonding wires 6 to reduce impedance discontinuities in the switch interconnect area for high-frequency or millimeter-wave signals. The module is packaged in a metal cavity, and its structure is similar to that of the aforementioned embodiments. Performance test results show that within the DC to 40 GHz frequency band, the insertion loss of this RF switch module is approximately 2 dB, the input return loss is approximately -15 dB, the on-state output return loss is approximately -15 dB, and the isolation is approximately -20 dB, verifying the applicability of the bonding wire matching structure in broadband RF switch modules.

[0071] Therefore, it can be seen that in different application scenarios of millimeter-wave functional chips 4, by setting a bonding wire matching structure at the corresponding position of the bonding wire, the impedance continuity in the high-frequency signal transmission process can be effectively improved, thereby enhancing the overall performance stability of the millimeter-wave functional module.

[0072] Another embodiment of the present invention provides an electronic device including the millimeter-wave functional module described above.

[0073] In this embodiment, the millimeter wave functional module serves as a radio frequency or millimeter wave signal processing unit in the electronic device, used to realize the functions of signal transmission, processing and transmission in the high frequency or millimeter wave band. The electronic device employs a millimeter-wave functional module. This module is based on a radio frequency microstrip line 5 disposed on a multilayer LCP substrate 1 and interconnected using bonding wires 6. This creates a stable high-frequency signal transmission path between the millimeter-wave functional chip 4, the radio frequency input module 2, and the radio frequency output module 3. Simultaneously, by setting bonding wire matching structures at positions corresponding to bonding wires 6 on the multilayer LCP substrate 1, the bonding wires 6 and the bonding wire matching structures electrically cooperate in signal transmission, jointly forming a signal transmission path with preset impedance characteristics. This creates a relatively continuous and stable impedance environment between the millimeter-wave functional chip 4 and the radio frequency microstrip line 5, meeting the requirements for low-loss and high-efficiency transmission of radio frequency or millimeter-wave signals within the millimeter-wave functional module. It also reduces or suppresses the impact of impedance abrupt changes caused by parasitic parameters of bonding wires 6 on high-frequency signal transmission. This helps reduce signal reflection and additional losses in the bonding wire 6 connection area, improves the transmission integrity and stability of high-frequency signals within the millimeter-wave functional module, and thus enhances the overall signal transmission performance and operational reliability of the millimeter-wave functional module in high-frequency or millimeter-wave application scenarios.

[0074] While the present invention has been disclosed above, its scope of protection is not limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, and all such changes and modifications will fall within the scope of protection of the present invention.

Claims

1. A millimeter-wave functional module, characterized in that, The system includes a multilayer LCP substrate (1), an RF input module (2), an RF output module (3), and a millimeter-wave functional chip (4) disposed on the multilayer LCP substrate (1). The multilayer LCP substrate (1) is provided with an RF microstrip line (5) and a bonding wire matching structure. The RF input module (2) and the RF output module (3) are electrically connected to the corresponding pins of the millimeter-wave functional chip (4) through the RF microstrip line (5) and the bonding wire (6). The bonding wire matching structure is disposed on the multilayer LCP substrate (1) at a position corresponding to the bonding wire (6) and is used to form a signal transmission path with a preset impedance characteristic with the bonding wire (6).

2. The millimeter-wave functional module as described in claim 1, characterized in that, The multilayer LCP substrate (1) includes stacked LCP dielectric layers (11) and conductor layers (12), the thickness of each LCP dielectric layer (11) is less than or equal to a preset cavity process threshold; the multilayer LCP substrate (1) is provided with a cavity structure (14), and the millimeter wave functional chip (4) is embedded in the cavity structure (14).

3. The millimeter-wave functional module as described in claim 1, characterized in that, It also includes a power conversion module. The multilayer LCP substrate (1) is also provided with power supply traces. The power conversion module and the power supply pin of the millimeter-wave functional chip (4) are electrically connected through the power supply traces and the bonding wire (6).

4. The millimeter-wave functional module as described in any one of claims 1-3, characterized in that, The bonding wire matching structure includes an equivalent capacitance structure disposed at the corresponding position of the bonding wire (6), the equivalent capacitance structure being formed by at least one of the conductor layer (12) of the multilayer LCP substrate (1), the radio frequency microstrip line (5), or the pad structure; and / or, the bonding wire matching structure includes a first defect ground structure disposed at the corresponding position of the bonding wire (6) in the conductor layer (12) for grounding.

5. The millimeter-wave functional module as described in any one of claims 1-3, characterized in that, The radio frequency input module (2) includes a first coaxial connector (21) for receiving radio frequency signals. The first coaxial connector (21) is electrically connected to the radio frequency input pin of the millimeter-wave functional chip (4) through the radio frequency microstrip line (5) and the bonding wire (6). The conductor layer (12) of the multilayer LCP substrate (1) corresponding to the connection between the first coaxial connector (21) and the radio frequency microstrip line (5) is provided with a second defect ground structure. And / or, the RF output module (3) includes a second coaxial connector for outputting RF signals, the second coaxial connector being electrically connected to the RF output pin of the millimeter-wave functional chip (4) via the RF microstrip line (5) and the bonding wire (6); the conductor layer (12) of the multilayer LCP substrate (1) corresponding to the connection between the second coaxial connector and the RF microstrip line (5) is provided with a third defect ground structure.

6. The millimeter-wave functional module as described in claim 5, characterized in that, It also includes a packaging housing (7), which has a mounting cavity (71) inside for accommodating the multilayer LCP substrate (1) and the millimeter-wave functional chip (4). The side wall of the packaging housing (7) is provided with a mounting hole (72) that is adapted to at least one of the first coaxial connector (21) and the second coaxial connector. The mounting hole (72) communicates with the mounting cavity (71).

7. The millimeter-wave functional module as described in any one of claims 1-3, characterized in that, The radio frequency microstrip line (5) is formed by a conductor layer (12) for signal transmission disposed on the surface of the multilayer LCP substrate (1) and a conductor layer (12) for grounding disposed inside or on the back of the multilayer LCP substrate (1).

8. The millimeter-wave functional module as described in any one of claims 1-3, characterized in that, The millimeter-wave functional chip (4) includes at least one of a low-noise amplifier chip, a mixer chip, a driver amplifier chip, and a radio frequency switch chip.

9. The millimeter-wave functional module as described in claim 3, characterized in that, The power conversion module includes a power decoupling and filtering circuit. The input terminal of the power decoupling and filtering circuit is used to connect to the power supply. The output terminal of the power decoupling and filtering circuit is electrically connected to the power supply pin of the millimeter-wave functional chip (4) through the power supply trace and the bonding wire (6).

10. An electronic device, characterized in that, Includes the millimeter-wave functional module as described in any one of claims 1-9.

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