A dry film structure and a method for manufacturing the same

Abstract

The application provides a dry film structure and a preparation method thereof, which effectively blocks etching of a plasma on a dry film base, avoids exposure of fillers and surface damage, fundamentally solves a dry film reliability cracking problem, is compatible with existing packaging and dry film production processes, does not affect original core performance of the dry film, has good mass productivity, and is controllable in cost. The dry film structure comprises a dry film layer and an organic passivation layer, the dry film layer comprises fillers and an organic resin, the fillers are encapsulated by the organic resin, and the surface of the dry film layer is provided with the organic passivation layer.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor device packaging, specifically to a dry film structure, and also provides a method for preparing the dry film structure. Background Technology

[0002] With the rapid development of semiconductor technology, advanced packaging technologies such as wafer-level packaging and system-in-package (SISP) have been widely applied. Buffered dry film (BF dry film), as a core functional material in advanced packaging, is widely used in scenarios such as chip stress buffering, insulation protection, and redistribution dielectric layers. Its performance directly determines the reliability of packaged devices.

[0003] BF dry film uses organic resin as a matrix and adds inorganic fillers to adjust the coefficient of thermal expansion and improve mechanical properties. In semiconductor packaging, plasma treatment is an essential core process, and its etching effect on organic materials is significant. In conventional BF dry film processing, the organic resin is easily etched away during this step (see...). Figure 1 Inorganic fillers have far better etching resistance than organic resins, resulting in a large amount of filler being exposed after etching, a sharp increase in surface roughness, and even irreversible interface damage.

[0004] In temperature cycling reliability testing, the aforementioned damage can trigger severe stress concentration, induce microcrack propagation, and ultimately lead to dry film cracking and failure. Existing solutions either significantly degrade the core performance of the dry film or suffer from poor interface compatibility, complex processes, and high costs, failing to meet mass production requirements. Therefore, developing a plasma-etched resistant BF dry film with excellent overall performance has become a pressing technical problem to be solved in this field. Summary of the Invention

[0005] To address the aforementioned issues, this invention provides a dry film structure that effectively blocks plasma from etching the dry film substrate, preventing filler exposure and surface damage, thus fundamentally solving the problem of dry film reliability cracking. Simultaneously, it is compatible with existing packaging and dry film manufacturing processes, does not affect the original core performance of the dry film, and offers good mass production capabilities and controllable costs.

[0006] A dry film structure, characterized in that it comprises: A dry film layer comprising fillers and organic resin, wherein the organic resin encapsulates the fillers. And an organic passivation layer; The surface of the dry film layer is provided with the organic passivation layer.

[0007] Its further features are: The organic passivation layer is an organic polymer material such as polyimide (PI); The thickness of the organic passivation layer is 3µm to 10µm; The thickness of the dry film layer is 10 μm to 30 μm.

[0008] A method for preparing a dry film structure, characterized in that: a dry film layer is laid flat, and then an organic passivation layer is coated on the upper surface of the dry film layer.

[0009] Its further features are: When the organic passivation layer is made of organic polymer materials such as polyimide (PI), the organic passivation layer is formed on the upper surface of the dry film layer by spin coating or spray coating processes.

[0010] Compared with existing technologies, by forming an organic passivation layer on the surface of the dry film, the plasma can be effectively blocked from etching the dry film substrate, avoiding the exposure of fillers and damage to the surface, thus fundamentally solving the problem of dry film reliability cracking. At the same time, this solution is compatible with existing packaging and dry film production processes, does not affect the original core performance of the dry film, has good mass production capability, and is cost-controllable. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of the structure of existing dry films in plasma processes; Figure 2 This is a schematic diagram of a specific embodiment of the present invention; The names corresponding to the serial numbers in the diagram are as follows:

[0012] Organic resin 101, filler 102, dry film layer 103, organic passivation layer 104; Dry membrane structure 201. Detailed Implementation

[0013] A dry membrane structure 201, see Figure 2 It includes: The dry film layer 103 includes filler 102 and organic resin 101, wherein the organic resin 101 encapsulates the filler 102. And organic passivation layer 104; An organic passivation layer 104 is disposed on the surface of the dry film layer 103.

[0014] In a specific embodiment, the organic passivation layer 104 is an organic polymer material such as polyimide (PI); the thickness of the organic passivation layer 104 is 3µm to 10µm. The thickness of the dry film layer 103 is 10 μm to 30 μm.

[0015] A method for preparing a dry film structure: a dry film layer 103 is laid flat, and then an organic passivation layer 104 is coated on the upper surface of the dry film layer 103.

[0016] When the organic passivation layer 104 is made of organic polymer materials such as polyimide (PI), the organic passivation layer 104 is formed on the upper surface of the dry film layer 103 by spin coating or spray coating processes.

[0017] Compared with existing technologies, by forming an organic passivation layer 104 on the surface of the dry film layer 103, the etching of the dry film substrate by plasma is effectively blocked, avoiding exposure of the filler 102 and damage to the surface (see...). Figure 1 This fundamentally solves the problem of dry film reliability cracking.

[0018] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0019] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A dry film structure, characterized in that, It includes: A dry film layer comprising fillers and organic resin, wherein the organic resin encapsulates the fillers. And an organic passivation layer; The surface of the dry film layer is provided with the organic passivation layer.

2. The dry film structure according to claim 1, characterized in that: The organic passivation layer is an organic polymer material such as polyimide (PI).

3. The dry film structure according to claim 1, characterized in that: The thickness of the organic passivation layer is 3µm to 10µm.

4. A method for preparing a dry film structure, used to prepare the dry film structure according to any one of claims 1-3, characterized in that: The dry film layer is laid flat, and then an organic passivation layer is coated on the upper surface of the dry film layer.

5. The method for preparing a dry film structure according to claim 4, characterized in that: When the organic passivation layer is made of organic polymer materials such as polyimide (PI), the organic passivation layer is formed on the upper surface of the dry film layer by spin coating or spray coating processes.

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