Thin film, thin film assembly, and photolithography apparatus

Abstract

Disclosed herein is a thin film for use in a lithographic apparatus, the thin film comprising a plurality of nanotubes, wherein the plurality of nanotubes comprises silicon-based nanotubes for filtering of undesired radiation. Also disclosed is a thin film assembly comprising such a thin film and a structure configured to support the thin film. Also disclosed is a method of manufacturing a thin film, the method comprising preparing a plurality of nanotubes, and arranging the nanotubes to form a thin film.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to European application 24167525.5, filed on 28 March 2024, and European application 24197628.1, filed on 30 August 2024, which are incorporated herein by reference in their entirety. Technical Field

[0003] The present invention relates to thin films, thin film assemblies, photolithography components including the thin film or thin film assembly, photolithography apparatus including the photolithography components, and methods for manufacturing thin films. Background Technology

[0004] A photolithography apparatus is a machine configured to apply a desired pattern onto a substrate. Photolithography apparatus can be used, for example, to manufacture integrated circuits (ICs). It can project a pattern from a patterning apparatus (e.g., a mask) onto a layer of radiation-sensitive material (resist) disposed on a substrate.

[0005] To project a pattern onto a substrate, a photolithography apparatus can use electromagnetic radiation. The wavelength of this radiation determines the minimum size of the feature that can be formed on the substrate. Compared to photolithography apparatus that uses radiation with a wavelength of, for example, 193 nm, photolithography apparatus that uses extreme ultraviolet (EUV) radiation in the range of 4 nm to 20 nm (e.g., 6.7 nm or 13.5 nm) can be used to form smaller features on the substrate.

[0006] In lithography apparatuses such as these, it is desirable for EUV radiation to easily penetrate the substrate for efficient and effective feature formation on the substrate. However, radiation outside the desired EUV wavelength range may also be projected toward the substrate from the projection system of the lithography apparatus. For example, some wavelengths of radiation may be undesirable because they could damage the substrate or interfere with feature formation on the substrate by EUV radiation. For this reason, it may be desirable to provide spectral filters within the lithography apparatus to suppress the transmission of undesirable wavelengths toward the substrate while allowing the transmission of the desired EUV wavelengths.

[0007] Spectral filter diaphragms (sometimes referred to as dynamic gas-lock (DGL) diaphragms) can be provided to perform spectral filtering functions in photolithography apparatuses. However, spectral filter diaphragms are sensitive to uncontrollable events, such as the falling of tiny particles and small pressure differences between the compartment housing the projection system and the compartment housing the substrate stage. Such events, which can occur within the photolithography apparatus, can cause spectral filter diaphragm failure.

[0008] The thickness of the spectral filter diaphragm can range from approximately 10 nm to 20 nm. Furthermore, the spectral filter diaphragm is typically pre-stressed to prevent wrinkling and fatigue during EUV exposure cycles. However, due to the pre-stressed nature of the spectral filter diaphragm, it can fail in undesirable ways. In particular, failure of the spectral filter diaphragm can result in smaller fragments of the diaphragm being blown through the interior of the lithography apparatus. Specifically, due to pressure differences within the lithography apparatus, fragments of the failed spectral filter diaphragm are likely to be blown into the projection system of the lithography apparatus. These fragments can cause contamination of the optical components of the projection system. Such contamination can have undesirable effects on the performance of the optical components, potentially causing localized overheating and / or damage.

[0009] Replacing a failed spectral filter diaphragm, cleaning any contaminated components, and / or repairing any damaged components may be associated with higher costs and extended downtime for lithography equipment.

[0010] Therefore, it is desirable to provide a spectral filtering device that is effective in transmitting radiation at the desired wavelength and suppressing radiation at undesired wavelengths, while also being more durable. In particular, it is desirable to provide a spectral filtering device that is less susceptible to environmental degradation of the lithography equipment and / or fails in a less damaging manner that is less likely to contaminate other components of the lithography equipment. Such a spectral filtering device can then be beneficial for use in applications other than lithography. Summary of the Invention

[0011] The present invention relates to providing thin films, thin film assemblies, photolithography components including thin films or thin film assemblies, photolithography apparatus including photolithography components, and methods for manufacturing thin films.

[0012] According to one aspect of the present invention, a thin film for a photolithography apparatus is provided. The thin film comprises a plurality of nanotubes. The plurality of nanotubes includes silicon-based nanotubes for filtering unwanted radiation.

[0013] According to another aspect of the present invention, a thin film for a photolithography apparatus is provided. The thin film comprises a plurality of nanotubes. The plurality of nanotubes includes carbon-based nanotubes coated with a silicon-based capping layer for filtering unwanted radiation.

[0014] According to another aspect of the present invention, a thin film assembly is provided, the thin film assembly including the aforementioned thin film and a structure configured to support the thin film.

[0015] According to another aspect of the present invention, a photolithography component for a photolithography apparatus is provided. The photolithography component includes the aforementioned thin film or the aforementioned thin film assembly.

[0016] According to another aspect of the present invention, a photolithography apparatus including the above-described photolithography components is provided.

[0017] According to another aspect of the present invention, a method for manufacturing the above-described thin film is provided.

[0018] According to another aspect of the present invention, a method for manufacturing the above-described thin-film assembly is provided.

[0019] Further embodiments, features, and advantages of the invention are described in detail below with reference to the accompanying drawings, as well as the structure and operation, features, and advantages of various embodiments of the invention. Attached Figure Description

[0020] Embodiments of the invention will now be described by way of example only with reference to the accompanying schematic drawings, in which:

[0021] - Figure 1 A lithography system, including lithography equipment and a radiation source, is described;

[0022] - Figure 2A and Figure 2B A plan view of a thin film assembly, including the thin film and the support structure, and a cross-sectional view of the same thin film assembly are depicted.

[0023] - Figure 3 A cross-sectional view of the nanotube is depicted;

[0024] - Figures 4A to 4C Thin films with irregular network structures including nanotubes of corresponding diameters were depicted;

[0025] - Figure 5 A cross-sectional view of a nanotube with a capping layer is depicted;

[0026] - Figure 6 A thin film comprising an outer carbon nanotube layer and a silicon nanotube layer disposed between the outer carbon nanotube layer is depicted.

[0027] The features shown in the accompanying drawings are not necessarily drawn to scale, and the dimensions and / or arrangements depicted are not limiting. It will be understood that the drawings include optional features that may not be essential to the invention. Furthermore, not all features of the device are depicted in every drawing, and the drawings may only show some of the components associated with describing a particular feature. Detailed Implementation

[0028] Figure 1A lithography system including a radiation source SO and a lithography apparatus LA is shown. The radiation source SO is configured to generate an EUV radiation beam B and supply the EUV radiation beam B to the lithography apparatus LA. The lithography apparatus LA includes an irradiation system IL, a support structure MT configured to support a pattern forming apparatus MA (e.g., a mask), a projection system PS, and a substrate stage WT configured to support a substrate W.

[0029] The irradiation system IL is configured to modulate the EUV radiation beam B before it is incident on the patterning apparatus MA. Furthermore, the irradiation system IL may include a faceted field mirror assembly 10 and a faceted pupil mirror assembly 11. The faceted field mirror assembly 10 and the faceted pupil mirror assembly 11 together provide the EUV radiation beam B with the desired cross-sectional shape and the desired intensity distribution. In addition to, or in place of, the faceted field mirror assembly 10 and the faceted pupil mirror assembly 11, the irradiation system IL may include other mirrors or devices.

[0030] After such adjustment, the EUV radiation beam B interacts with the patterning apparatus MA. This interaction produces a patterned EUV radiation beam B'. A projection system PS is configured to project the patterned EUV radiation beam B' onto a substrate W. For this purpose, the projection system PS may include a plurality of mirrors 13, 14 configured to project the patterned EUV radiation beam B' onto the substrate W held by the substrate stage WT. The projection system PS can apply a reduction factor to the patterned EUV radiation beam B' to form an image with features smaller than the corresponding features on the patterning apparatus MA. For example, a reduction factor of 4 or 8 can be applied. Although... Figure 1 The projection system PS shown has only two mirrors 13 and 14, but the projection system PS may include a different number of mirrors (e.g., six or eight mirrors).

[0031] The substrate W may include a previously formed pattern. In this case, the photolithography apparatus LA aligns the image formed by the patterned EUV radiation beam B' with the previously formed pattern on the substrate W.

[0032] A relative vacuum can be provided in the radiation source SO, the irradiation system IL, and / or the projection system PS, i.e., a small amount of gas (e.g., hydrogen) at a pressure far below atmospheric pressure.

[0033] The radiation source SO can be a laser-generated plasma (LPP) source, a discharge-generated plasma (DPP) source, a free-electron laser (FEL), or any other radiation source capable of generating EUV radiation.

[0034] In photolithography equipment, for example as described above... Figure 1 In lithography equipment, it is desirable for EUV radiation to be readily transmitted to the substrate for efficient and effective feature formation on the substrate. However, radiation outside the desired EUV wavelength range may also be projected toward the substrate from the projection system of the lithography equipment. For example, radiation in certain wavelength ranges may be undesirable because it could damage the substrate or interfere with feature formation by EUV radiation. For this reason, it may be desirable to provide spectral filters within the lithography equipment to suppress the transmission of undesirable wavelengths toward the substrate while allowing the transmission of the desired EUV wavelengths.

[0035] Spectral filter diaphragms, sometimes referred to as dynamic gas-lock (DGL) diaphragms, can be provided to perform spectral filtering functions in photolithography equipment. However, spectral filter diaphragms are sensitive to uncontrollable events, such as the falling of tiny particles and small pressure differences between the compartment housing the projection system PS and the compartment housing the substrate stage WT. Such events, which can occur within the photolithography equipment, can cause spectral filter diaphragm failure.

[0036] The thickness of the spectral filter diaphragm can range from approximately 5 nm to 40 nm, preferably from 8 nm to 30 nm, and more preferably from 10 nm to 20 nm. Furthermore, the spectral filter diaphragm is typically pre-stressed to prevent wrinkling and fatigue during EUV exposure cycles. However, due to the pre-stressed nature of the spectral filter diaphragm, it may fail in undesirable ways. In particular, failure of the spectral filter diaphragm may result in smaller fragments of the spectral filter diaphragm being blown through the interior of the lithography apparatus. Specifically, due to the pressure differential within the lithography apparatus, fragments of the failed spectral filter diaphragm are likely to be blown into the projection system of the lithography apparatus. These fragments may cause contamination of the optical components of the projection system. Such contamination may have undesirable effects on the performance of the optical components, potentially causing localized overheating and / or damage to the optical components.

[0037] Replacing a failed spectral filter diaphragm, cleaning any contaminated components, and / or repairing any damaged components may be associated with higher costs and extended downtime for lithography equipment.

[0038] Therefore, it is desirable to provide a spectral filter that is effective in transmitting radiation at the desired wavelength and suppressing radiation at undesired wavelengths, while also being more durable. In particular, it is desirable to provide a spectral filter that is less susceptible to environmental degradation of the lithography equipment and / or fails in a less damaging manner that is less likely to contaminate other components of the lithography equipment. Specifically, because prestressing the filter increases the risk of failure by causing numerous debris ejections, it is desirable that the spectral filter not be prestressed.

[0039] Then, more durable spectral filtering devices could be beneficial for use in applications other than photolithography.

[0040] Figure 2A and Figure 2B A thin film assembly is shown, including a thin film 1000 and a structure 500 configured to support the thin film 1000. Figure 2A A floor plan view is provided, and Figure 2B Provided through such Figure 2A The cross-sectional view of line AA shown.

[0041] Thin film 1000 is suitable for use in, for example, the above reference. Figure 1 The photolithography apparatus described herein uses a thin film 1000 comprising a plurality of nanotubes. According to one arrangement, the plurality of nanotubes comprises silicon-based nanotubes. Alternatively or additionally, the plurality of nanotubes may comprise carbon-based nanotubes coated with a silicon-based capping layer. The silicon-based capping layer may be composed of silicon. The carbon-based nanotubes are primarily composed of carbon and may be composed of only carbon. Similarly, the silicon-based nanotubes are primarily composed of silicon and may be composed of only silicon.

[0042] Such films, composed primarily or entirely of carbon-based nanotubes and / or silicon-based nanotubes, are porous materials. Therefore, these films can potentially offer very high EUV transmittance. Furthermore, they can also expect to provide very good mechanical stability and thus can be fabricated in small thicknesses while maintaining robustness or durability against mechanical failure.

[0043] In some embodiments, the thin film 1000 may be transparent for at least 70% of EUV radiation, preferably at least 80% of EUV radiation, and more preferably at least 90% of EUV radiation. In other words, the thin film 1000 allows EUV radiation to be transmitted through it. In a photolithography apparatus, this allows the desired EUV radiation to be transmitted toward the substrate.

[0044] Thin film 1000 is suitable for filtering unwanted radiation in photolithography equipment. For example, in some photolithography applications, deep ultraviolet (DUV) radiation may be undesirable. In other words, it may be desirable to suppress DUV radiation, which has wavelengths in the range of 100 nm to 300 nm. In some applications, potentially undesirable radiation may be radiation of different wavelengths. For example, infrared (IR) radiation with wavelengths in the range of 750 nm to 1 mm may be undesirable.

[0045] In some embodiments, the thin film 1000 may be configured to filter out at least 70% of DUV radiation, preferably at least 80% of DUV radiation, and more preferably at least 90% of DUV radiation. In other words, the thin film 1000 can prevent most of the DUV radiation from transmitting through it. In a photolithography apparatus, this can prevent most of the unwanted DUV radiation from transmitting toward the substrate.

[0046] Figure 3 A cross-sectional view of nanotube 10 is provided. In the thin film 100, a majority of the nanotubes 10 desirably have a diameter within a preferred diameter range. The preferred diameter range may be between 5 nm and 30 nm, desirably between 10 nm and 30 nm, more desirably between 15 nm and 25 nm, and even more desirably 20 nm. Desirably, at least 65% of the nanotubes in the thin film have a diameter within the preferred diameter range. More desirably, at least 80% of the nanotubes in the thin film have a diameter within the preferred diameter range.

[0047] Thin films can be fabricated by preparing multiple nanotubes and arranging them to form a thin film 100. For example... Figures 4A to 4C As shown in the diagram, nanotubes can be arranged to form a network. In other words, the film can include multiple nanotubes arranged to overlap each other to form an entangled assembly of nanotubes. The network can have an irregular structure, such as... Figures 4A to 4C The network structure shown is an example of this. For instance, nanotubes can be interlaced to form an interconnected structure composed of discrete nanotubes. Furthermore, the orientation of the nanotubes within the network can be random.

[0048] exist Figure 4A In the mesh 101, each nanotube 10 has a diameter of approximately 10 nm. Figure 4B In the mesh 102, each nanotube 10 has a diameter of approximately 20 nm. Figure 4C In the mesh 103, each nanotube 10 has a diameter of approximately 30 nm. Figure 4A The density of nanotubes in mesh 101, or the number of nanotubes in a given volume, can be greater than that in... Figure 4C The density of nanotubes in the mesh 1000, or the number of nanotubes within a given volume. In other words, thinner nanotubes can be arranged more densely than thicker nanotubes. The thickness of the nanotubes and the density of the nanotube mesh can be selected based on the thin film 1000, depending on the desired properties of the application.

[0049] The thin film 1000 optionally includes multiple nanotubes coated with a capping layer. In this way, the materials of the nanotubes and the capping layer can be selected to provide complementary properties. The capping layer may include, alone or in combination, any of the following materials: yttrium (Y), yttrium oxide (Y₂). aO b Materials used for the capping layer include aluminum oxide (Al₂O₃), hafnium oxide (HfO₂), zirconium oxide (ZrO₂), ruthenium (Ru), platinum (Pt), gold (Au), zirconium nitride (ZrN), aluminum (Al), or zirconium (Zr). The capping layer may include multiple sublayers formed from different materials.

[0050] In some arrangements, the capping layer may be a material having properties that enable the transmission of desired radiation and / or the suppression of unwanted radiation. In this way, the capping layer can help the thin film provide the desired filtration function. For example, the capping layer may comprise or be composed of a metal or a half-metal. For example, the capping layer may optionally comprise or be composed of one or more of the following: aluminum, zirconium, yttrium, niobium, ruthenium, or molybdenum. In a preferred arrangement, the capping layer may comprise or be composed of silicon. For example, the capping layer may comprise or be composed of polycrystalline silicon. The capping layer may optionally include a silicon-containing compound. The compound may optionally comprise one or more of a metal and oxygen. The capping layer may optionally comprise silicon oxynitride. For example, the capping layer may comprise silicon oxide (SiO), silicon nitride (SiN), or SiNO, wherein each of these materials may be provided in any ratio of the component elements; for example, silicon oxide may be silicon dioxide. In a preferred arrangement, the capping layer comprises yttrium silicate (YSiO). Silicon possesses properties that enable the suppression of deep ultraviolet radiation while transmitting extreme ultraviolet radiation. Therefore, the use of silicon-based nanotubes and / or silicon-based capping layers may be desirable in applications where the suppression of deep ultraviolet radiation and the transmission of extreme ultraviolet radiation are desired (such as photolithography equipment).

[0051] Additionally or alternatively, the capping layer can be made of a material designed to provide strength and abrasion resistance. In this way, the lifespan of the film can be extended, which can be expected to reduce the costs and downtime associated with frequent film replacements. The capping layer can contain or be composed of carbon. For example, the capping layer can contain or be composed of amorphous carbon. Carbon has properties that enable it to achieve greater thermal and mechanical resistance than silicon. In other words, carbon can withstand mechanical and thermal loads for longer periods than silicon. Therefore, the use of carbon-based nanotubes and / or carbon-based capping layers may be desirable in applications with potentially harsh mechanical and / or thermal environments.

[0052] In a preferred embodiment, the thin film may comprise a combination of carbon and a metal or half-metal (e.g., silicon). In this way, the metal or half-metal can be selected based on desired radiation transmission and suppression properties. Carbon can be provided to help the thin film withstand the thermal and mechanical loads provided in a given application. For example, thin film 1000 may comprise carbon-based nanotubes coated with a metal-based or half-metal-based capping layer (such as silicon capping layer 11). Alternatively or additionally, thin film 1000 may comprise silicon-based nanotubes coated with carbon capping layer 11. It is preferable to have a carbon-based capping layer such that the outer layer, most directly exposed to the environment and associated mechanical and thermal loads, is resilient.

[0053] Figure 5 A cross-sectional view is provided through a nanotube 10 individually coated with a capping layer 11. In one arrangement, at least some of the nanotubes 10 of the film 1000 may be individually coated with the capping layer 11, such as... Figure 5 As shown. A capping layer 11 (such as,) on a single nanotube. Figure 5 The cover layer 11) can have a thickness between 0.3 nm and 3 nm, preferably between 0.5 nm and 2 nm, and more preferably 1 nm.

[0054] Additionally or alternatively, at least some, and optionally all, of the nanotubes may be collectively coated with a capping layer. This capping layer, which collectively coats multiple nanotubes, is referred to herein as a protective capping layer. In other words, a protective capping layer may be provided to surround the exterior of multiple nanotubes. For example, in one arrangement, all nanotubes may be collectively coated with a protective capping layer such that the protective capping layer is disposed over the entire exterior of the film. In another arrangement, such as those described below… Figure 6 In the described arrangement, the thin film may comprise multiple layers, each layer consisting of multiple nanotubes. In the arrangement of multiple layers, one or more layers may be coated within a protective capping layer. Each protective capping layer coating the aggregated multiple nanotubes may have a thickness from 0.5 nm to 100 nm, preferably from 1 nm to 10 nm, and more preferably 5 nm.

[0055] Thin film 1000 may optionally include both silicon-based nanotubes and carbon-based nanotubes. As explained above regarding the capping layer, this combination allows for the effective utilization of the beneficial properties of silicon and carbon.

[0056] Silicon-based nanotubes can be arranged to form silicon-based nanotube layers. Additionally or alternatively, carbon-based nanotubes can be arranged to form carbon-based nanotube layers.

[0057] Figure 6A thin film 1000 comprising a carbon-based nanotube layer 100 and a silicon-based nanotube layer 200 is shown. Specifically, Figure 6 The arrangement comprises two carbon-based nanotube layers 100. In this arrangement, a silicon-based nanotube layer 200 is disposed between the carbon-based nanotube layers 100. Specifically, it is desirable that the outermost layer of the film 1000 is the carbon-based nanotube layer 200. In this way, the carbon-based nanotube layer 200 can be exposed to the environment surrounding the film 1000 more than the silicon-based nanotube layer 100. Using this arrangement, the carbon-based nanotube layer 200 can protect the silicon-based nanotube layer 100.

[0058] In another arrangement, the film may further include at least one additional layer of silicon-based nanotubes and / or carbon-based nanotubes. Alternatively or additionally, the film may include at least one layer formed of a combination of both silicon-based nanotubes and carbon-based nanotubes.

[0059] exist Figure 2A and Figure 2B In this arrangement, the thin film 1000 is part of a thin film assembly, which also includes a structure 500 for supporting the thin film 1000. Specifically, the structure 500 helps maintain the shape of the thin film 1000. In other words, the structure 500 can be desiccated to mitigate bending or deformation of the thin film 1000. Furthermore, the structure 500 helps maintain the thin film 1000 in a desired position and orientation for use within the device. The structure 500 may be a frame.

[0060] Structure 500 can support the membrane 1000 peripherally. In other words, it is located near the outer edge of the membrane 1000 and away from its center (in a plan view, as shown in...). Figure 2A (As seen) supports the thin film 1000. In this way, structure 500 can avoid positions near the center of the thin film (in plan view). Therefore, the center of the thin film can be left unshielded, allowing the thin film to perform the function of allowing desired radiation to pass through while filtering out unwanted radiation.

[0061] exist Figure 2A and Figure 2B In this arrangement, structure 500 supports the thin film 1000 at its peripheral surface 1001. Structure 500 may optionally be continuous, and may optionally surround the thin film 1000. Figure 2A and Figure 2B In the arrangement, structure 500 is the frame of the peripheral surface 1001 supporting the film 1000. The film 1000 can cover the frame.

[0062] In alternative arrangements, the structure can be discontinuous. The structure can be arranged to support the membrane at discrete locations. If the membrane has a non-circular shape (in a plan view), such as a square or rectangular shape, the structure can be configured to support the corners of the membrane.

[0063] Alternatively, in another arrangement, the structure can be a mesh or net arranged to support the thin film. In this way, the mesh can exist with a sufficient open area through which radiation can be transmitted.

[0064] exist Figure 2A and Figure 2B In an alternative arrangement not shown, the membrane can be self-supporting. In other words, the membrane can have sufficient strength and stiffness to perform its function without requiring a structure to support it. This may be the desired arrangement due to the reduced manufacturing cost and complexity compared to arrangements that require a structure to support the membrane.

[0065] In some situations, it may be desirable to provide a structure that supports the film, even if the film itself has sufficient structural integrity to be self-supporting. For example, a structure such as a frame can help position the film at a desired location and orientation within the device. In particular, the structure may include attachment points that can be used to connect the film assembly to other components of the device.

[0066] Thin-film assemblies can be fabricated by depositing the thin film on a support substrate. The thin film can be deposited layer by layer. For example, one layer of nanotubes can be deposited, followed by another layer of nanotubes, until the thin film is complete. In other words, the thin film can be fabricated by sequentially depositing nanotube layers. Once the thin film has been fabricated, selected regions of the support substrate can be removed, leaving the remaining regions of the support substrate to form a structure configured to support the thin film. The selected regions of the support substrate can be removed using any suitable method (e.g., etching). Alternatively, the thin film can be separated from the support substrate and attached to a pre-fabricated structure to support it.

[0067] Thin films or thin film components, such as Figure 2A and Figure 2B A thin film or thin film assembly can be included in the photolithography component of a photolithography apparatus. The thin film or thin film assembly can be a photolithography component of a photolithography apparatus. The thin film is preferably disposed within the radiation path of the photolithography apparatus. In this way, the thin film can perform a spectral filtering function. The structure configured to support the thin film is preferably disposed outside the radiation path. In other words, the structure is preferably arranged such that the desired radiation can pass through the thin film assembly without being blocked or excessively suppressed.

[0068] A lithography apparatus may have an optical chamber and a substrate chamber. The optical chamber may house optical components configured to direct radiation to the substrate being lithographically processed. The substrate chamber may house a substrate stage (WT) configured to support the substrate being lithographically processed. The lithography components, including thin films, are desiccated to function as spectral filters. For example, the thin film may be configured to transmit desired radiation and suppress unwanted radiation within the lithography apparatus.

[0069] The photolithography components are preferably arranged within the photolithography apparatus such that the thin film is positioned between the optical chamber and the substrate chamber. In other words, the photolithography apparatus is preferably configured such that the thin film acts as a spectral filter for radiation emitted from the optical components toward the substrate. For example, in Figure 1 In a photolithography device, the photolithography component can be positioned between the projection system PS and the substrate stage WT.

[0070] Alternatively or additionally, the photolithography components, including thin films, may be disposed within the projection system PS. The photolithography components may be disposed closer to the substrate stage than any other component of the projection system PS.

[0071] Alternatively or additionally, the photolithography components, including thin films, can be configured to be disposed on or near the patterning apparatus MA (e.g., a mask) to act as a support structure MT, such as those referenced above. Figure 1 As described. In other words, a lithography component can act as a surface layer. In this context, a surface layer is a component (such as a thin film) configured to protect a patterning apparatus MA (e.g., a mask) from unwanted radiation. The lithography component can be configured to be attached to the patterning apparatus MA.

[0072] While specific references are made to the use of lithography equipment in IC manufacturing in this article, it should be understood that the lithography equipment described herein can have other applications. Other possible applications include manufacturing integrated optical systems, guiding and detecting patterns for magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin-film magnetic heads, etc.

[0073] Although embodiments of the invention may be specifically referred to herein in the context of lithography equipment, embodiments of the invention can be used in other equipment. Embodiments of the invention can form part of mask inspection equipment, metrology equipment, or any equipment that measures or processes objects such as wafers (or other substrates) or masks (or other patterning apparatus). These devices are generally referred to as lithography tools. Such lithography tools can use vacuum conditions or ambient (non-vacuum) conditions.

[0074] Although specific embodiments of the invention have been described above, it will be understood that the invention can be practiced in ways other than those described. The above description is intended to be illustrative and not restrictive. Therefore, it will be apparent to those skilled in the art that modifications can be made to the described invention without departing from the scope of the claims set forth below.

[0075] The embodiments include aspects numbered as follows:

[0076] 1. A thin film for a photolithography apparatus, the thin film comprising a plurality of nanotubes, wherein the plurality of nanotubes includes silicon-based nanotubes for filtering unwanted radiation.

[0077] 2. A thin film for a photolithography apparatus, the thin film comprising a plurality of nanotubes, wherein the plurality of nanotubes includes carbon-based nanotubes coated with a silicon-based capping layer for filtering unwanted radiation.

[0078] 3. The thin film according to any one of aspects 1 and 2, wherein the thin film is transparent to at least 80% of extreme ultraviolet radiation.

[0079] 4. The thin film according to any of the foregoing aspects, wherein the thin film is configured to filter out at least 70% of deep ultraviolet radiation.

[0080] 5. The thin film according to any of the foregoing aspects, wherein at least 80% of the nanotubes have a diameter between 5 nm and 30 nm.

[0081] 6. The thin film according to any of the foregoing aspects, wherein a plurality of nanotubes in the nanotubes are coated with a capping layer.

[0082] 7. The thin film according to aspect 6, wherein at least some of the nanotubes are individually coated with the covering layer.

[0083] 8. The thin film according to any one of aspects 6 and 7, wherein each capping layer has a thickness between 0.5 nm and 2 nm.

[0084] 9. The thin film according to aspect 6, wherein at least some of the nanotubes are collectively coated with a protective covering layer.

[0085] 10. The thin film according to aspect 9, wherein the protective coating has a thickness from 1 nm to 10 nm.

[0086] 11. The film according to any one of aspects 6 to 10, wherein the covering layer comprises carbon.

[0087] 12. The thin film according to any one of aspects 6 to 10, wherein the covering layer comprises a metal or a half-metal.

[0088] 13. The thin film according to aspect 12, wherein the covering layer comprises one or more of aluminum, zirconium, yttrium, niobium, ruthenium, or molybdenum.

[0089] 14. The thin film according to aspect 12, wherein the capping layer comprises silicon.

[0090] 15. The thin film according to aspect 14, wherein the capping layer comprises a silicon-containing compound.

[0091] 16. The thin film according to aspect 15, wherein the compound comprises a metal and / or oxygen.

[0092] 17. The thin film according to aspect 14, wherein the capping layer is silicon.

[0093] 18. The thin film according to any of the foregoing aspects includes both silicon-based nanotubes and carbon-based nanotubes.

[0094] 19. The thin film according to aspect 18, wherein the silicon-based nanotubes are arranged to form a silicon-based nanotube layer, and wherein the carbon-based nanotubes are arranged to form a carbon-based nanotube layer.

[0095] 20. The thin film according to aspect 19, wherein the silicon-based nanotube layers are disposed between carbon-based nanotube layers.

[0096] 21. The thin film according to any one of aspects 19 and 20, wherein the outermost layer of the thin film is a carbon-based nanotube layer.

[0097] 22. The thin film according to any one of aspects 19 to 21 further comprises at least one additional layer of silicon-based nanotubes and / or carbon-based nanotubes.

[0098] 23. The thin film according to any one of aspects 18 to 22 further comprises at least one layer formed by a combination of silicon-based nanotubes and carbon-based nanotubes.

[0099] 24. The thin film according to any of the foregoing aspects, wherein the nanotubes are arranged to form a network.

[0100] 25. The film according to aspect 24, wherein the mesh has an irregular structure.

[0101] 26. The thin film according to any of the foregoing aspects, wherein the thin film is self-supporting.

[0102] 27. A thin-film assembly, comprising:

[0103] The film according to any one of aspects 1 to 26, and

[0104] The structure is configured to support the thin film.

[0105] 28. The thin film assembly according to aspect 27, wherein the structure supports the thin film near its periphery.

[0106] 29. The thin film assembly according to aspect 28, wherein the structure supports the thin film at the peripheral surface of the thin film.

[0107] 30. The thin film assembly according to aspect 29, wherein the structure is a frame supporting the peripheral surface of the thin film, and wherein the thin film covers the frame.

[0108] 31. The thin-film assembly according to any one of aspects 27 to 29, wherein the structure is a frame.

[0109] 32. A photolithography component for a photolithography apparatus, the photolithography component comprising a thin film according to any one of aspects 1 to 26, or a thin film assembly according to any one of aspects 27 to 31.

[0110] 33. The photolithography component according to aspect 32, wherein the photolithography component serves as a spectral filter.

[0111] 34. The photolithography component according to any one of aspects 32 and 33, wherein the photolithography component serves as a surface film.

[0112] 35. The photolithography component according to any one of aspects 32 to 34, wherein the photolithography component is configured to be attached to the pattern forming apparatus.

[0113] 36. A lithography apparatus comprising a lithography component according to any one of aspects 32 to 35.

[0114] 37. The photolithography apparatus according to aspect 36, comprising:

[0115] An optical compartment housing optical components configured to direct radiation to a photolithographically etched substrate; and

[0116] A substrate compartment that houses a substrate stage configured to support the substrate subjected to photolithography;

[0117] The photolithography component is arranged such that the thin film is disposed between the optical compartment and the substrate compartment.

[0118] 38. The photolithography apparatus according to aspect 36, wherein the photolithography component is attached to the pattern forming apparatus.

[0119] 39. The photolithography apparatus according to any one of aspects 36 to 38, wherein the thin film is disposed in the radiation path.

[0120] 40. The lithography apparatus according to any one of aspects 36 to 39, wherein the lithography component includes a thin film assembly according to any one of aspects 27 to 31, wherein the structure is disposed outside the radiation path.

[0121] 41. A method of manufacturing a thin film according to any one of aspects 1 to 26, comprising: preparing a plurality of nanotubes and arranging the nanotubes to form the thin film.

[0122] 42. A method of manufacturing a thin film assembly according to any one of aspects 27 to 31, comprising: depositing the thin film on a support substrate.

[0123] 43. The method according to aspect 42 further includes: removing a selected region of the support substrate such that the remaining region of the support substrate forms the structure configured to support the thin film.

[0124] 44. The method according to aspect 43, wherein removing the selected region of the support substrate comprises: etching the selected region of the support substrate.

[0125] 45. The method according to aspect 42 further includes: separating the thin film from the supporting substrate and attaching the thin film to the structure.

[0126] 46. ​​The method according to any one of aspects 42 to 45, wherein depositing the thin film comprises: sequentially depositing nanotube layers.

Claims

1. A thin film for use in a photolithography apparatus, the thin film comprising a plurality of nanotubes, wherein, The plurality of nanotubes include silicon-based nanotubes for filtering unwanted radiation.

2. A thin film for use in a photolithography apparatus, the thin film comprising a plurality of nanotubes, wherein, The plurality of nanotubes includes carbon-based nanotubes coated with a silicon-based capping layer for filtering unwanted radiation.

3. The thin film according to any one of claims 1 and 2, wherein, The film is transparent to at least 80% of extreme ultraviolet radiation.

4. The thin film according to any of the preceding claims, wherein, The film is configured to filter out at least 70% of deep ultraviolet radiation.

5. The thin film according to any of the preceding claims, wherein, At least 80% of the nanotubes have a diameter between 5 nm and 30 nm.

6. The thin film according to any one of the preceding claims, wherein, Multiple nanotubes in the nanotubes are coated with a capping layer.

7. The film according to claim 6, wherein, At least some of the nanotubes are individually coated with the covering layer.

8. The thin film according to any one of claims 6 and 7, wherein, Each capping layer has a thickness between 0.5 nm and 2 nm.

9. The film according to claim 6, wherein, At least some of the nanotubes are collectively coated with a protective covering layer.

10. The thin film according to claim 9, wherein, The protective coating has a thickness ranging from 1 nm to 10 nm.

11. The thin film according to any one of claims 6 to 10, wherein, The coating layer contains carbon.

12. The thin film according to any one of claims 6 to 10, wherein, The covering layer contains metal or semi-metal.

13. The thin film according to any of the preceding claims comprises both silicon-based nanotubes and carbon-based nanotubes.

14. The thin film according to claim 13, wherein, The silicon-based nanotubes are arranged to form a silicon-based nanotube layer, and the carbon-based nanotubes are arranged to form a carbon-based nanotube layer.

15. The thin film according to claim 14, wherein, The silicon-based nanotube layers are disposed between the carbon-based nanotube layers.

16. The thin film according to any one of claims 14 and 15, wherein, The outermost layer of the film is a carbon-based nanotube layer.

17. The thin film according to any one of claims 14 to 16 further comprises at least one additional layer of silicon-based nanotubes and / or carbon-based nanotubes.

18. The thin film according to any one of claims 13 to 17 further comprises at least one layer formed by a combination of silicon-based nanotubes and carbon-based nanotubes.

19. A thin-film assembly, comprising: The film according to any one of claims 1 to 18, and The structure is configured to support the thin film.

20. A photolithography component for a photolithography apparatus, the photolithography component comprising a thin film according to any one of claims 1 to 19.

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