Light emitting device and image display device

Abstract

A light-emitting device according to an embodiment of the present disclosure includes a light-emitting element including a light-emitting surface; a first transparent electrode provided in contact with the light-emitting surface and absorbing ultraviolet light and transmitting visible light; and a second transparent electrode provided in contact with a surface on the opposite side of the surface of the first transparent electrode facing the light-emitting surface and transmitting both visible light and ultraviolet light.

Description

Technical Field

[0001] This disclosure relates to a light-emitting device and an image display device including the light-emitting device. Background Technology

[0002] A light-emitting device has been proposed, comprising: a light-emitting element formed of an individualized compound semiconductor layer; and an insulator in which the light-emitting element is embedded except for the light-emitting surface of the light-emitting element (see, for example, Patent Document 1).

[0003] Reference List

[0004] Patent documents

[0005] Patent Document 1: International Publication No. WO 2022 / 185976 Summary of the Invention

[0006] Meanwhile, in light-emitting devices including miniature light-emitting diodes (LEDs), the light-emitting elements may have bright spots or dark spots due to defects in the substrate.

[0007] A light-emitting device according to one embodiment of the present disclosure includes: a light-emitting element including a light-emitting surface; a first transparent electrode disposed in contact with the light-emitting surface and absorbing ultraviolet light and transmitting visible light; and a second transparent electrode disposed in contact with a surface of the first transparent electrode opposite to the surface of the first transparent electrode facing the light-emitting surface and transmitting both visible light and ultraviolet light.

[0008] In a light-emitting device according to one embodiment of the present disclosure, the first transparent electrode can be ablated by UV radiation to form a cavity between the first transparent electrode and the second transparent electrode. Therefore, defects in the light-emitting element are disabled. Attached Figure Description

[0009] Figure 1 This is a schematic cross-sectional view illustrating an exemplary configuration of a light-emitting device according to one embodiment of the present disclosure.

[0010] Figure 2A This is a schematic cross-sectional view showing... Figure 1 An exemplary manufacturing process of the light-emitting device is shown in the figure.

[0011] Figure 2B This is a schematic cross-sectional view showing... Figure 2A Subsequent processing.

[0012] Figure 2C This is a schematic cross-sectional view showing... Figure 2B Subsequent processing.

[0013] Figure 2DThis is a schematic cross-sectional view showing... Figure 2C Subsequent processing.

[0014] Figure 2E This is a schematic cross-sectional view showing... Figure 2D Subsequent processing.

[0015] Figure 2F This is a schematic cross-sectional view showing... Figure 2E Subsequent processing.

[0016] Figure 2G This is a schematic cross-sectional view showing... Figure 2F Subsequent processing.

[0017] Figure 3 This is a schematic cross-sectional view showing... Figure 1 The example configuration of the light-emitting device shown is after the defect point is disabled.

[0018] Figure 4 This is a schematic cross-sectional view showing... Figure 3 An exemplary configuration of the light-emitting unit is shown in the figure.

[0019] Figure 5 This is a schematic cross-sectional view illustrating an exemplary configuration of a light-emitting device according to a variation of this disclosure, Example 1.

[0020] Figure 6 This is a schematic cross-sectional view illustrating an exemplary configuration of the light-emitting device according to Variation 2 of this disclosure.

[0021] Figure 7 This is a schematic cross-sectional view illustrating an exemplary configuration of the light-emitting device according to Variation 3 of this disclosure.

[0022] Figure 8 This is a perspective view illustrating an exemplary configuration of an image display device according to an application example of this disclosure.

[0023] Figure 9 This is a schematic diagram showing... Figure 8 An exemplary wiring layout for an image display device is shown in the figure.

[0024] Figure 10 This is a perspective view illustrating an exemplary configuration of an image display device according to an application example of this disclosure.

[0025] Figure 11 It is a perspective view, showing Figure 10 The mounting plate configuration is shown in the image.

[0026] Figure 12 It is a perspective view, showing Figure 11 The configuration of the unit boards is shown in the figure.

[0027] Figure 13 This is a diagram illustrating an example of an image display device according to an application example of this disclosure. Detailed Implementation

[0028] Hereinafter, some embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The following description is a specific example of the present disclosure, and the present disclosure is not limited to the following aspects. Furthermore, the present disclosure is not limited to the arrangement, dimensions, scale, etc. of the constituent elements shown in the drawings. It should be noted that the description will proceed in the following order.

[0029] 1. Implementation method (Example of having a first transparent electrode that absorbs ultraviolet light and transmits visible light and a second transparent electrode that transmits both visible and ultraviolet light)

[0030] 1-1. Configuration of the light-emitting device

[0031] 1-2. Manufacturing method of light-emitting device

[0032] 1-3. Disable processing for defects in the light-emitting device.

[0033] 1-4. Functions and Effects

[0034] 2. Variations

[0035] 2-1. Variation Example 1 (Another example of a light-emitting device)

[0036] 2-2. Variation Example 2 (Another example of a light-emitting device)

[0037] 2-3. Variation Example 3 (Another example of a light-emitting device)

[0038] 3. Application Examples

[0039] <1. Implementation Method>

[0040] Figure 1 An exemplary cross-sectional configuration of a light-emitting device 1 according to one embodiment of the present disclosure is schematically shown. The light-emitting device 1 is preferably applicable to an image display device, i.e., a so-called LED display (e.g., described below). Figure 8 The image display device 100 shown in the figure.

[0041] [1-1. Configuration of the light-emitting device]

[0042] The light-emitting device 1 has a stacked structure in which, for example, a driving plate 30, a light-emitting unit 10 including a light-emitting element 11, and a wavelength conversion unit 20 are stacked sequentially in the Z-axis direction, which is the thickness direction orthogonal to the XY plane.

[0043] The light-emitting unit 10 includes one or more light-emitting elements 11, one or more first transparent electrodes 121, one or more second transparent electrodes 122, multiple transparent electrodes 123, one or more plugs 13, multiple pad electrodes 14, one or more insulating layers 15, one or more insulating layers 16, multiple pad portions 17, one or more buried layers 181, and one or more buried layers 182.

[0044] Light-emitting element 11 is provided for each pixel P, for example. In other words, one light-emitting element 11 is provided for one pixel P. However, multiple light-emitting elements 11 can be provided for one pixel P. The light-emitting element 11 is a solid-state light-emitting element that emits light of a predetermined wavelength band from its upper surface, and is, for example, a light-emitting diode (LED) chip. An LED chip refers to a chip obtained by cutting a crystal growth wafer, rather than a packaged device encapsulated in molding resin or the like. LED chips have a size of, for example, 100 μm or smaller, and are so-called micro LEDs.

[0045] The light-emitting element 11, for example, has a mesa shape. The sidewalls of the light-emitting element 11 are inclined at an angle of less than 90° relative to the driving plate 30. The light-emitting element 11 includes, for example, a first conductivity type layer 111, an active layer 112, and a second conductivity type layer 113 stacked sequentially from the driving plate 30. The light-emitting element 11 also includes, for example, a first electrode 114, which is located on the side opposite to the active layer 112 when viewed from the first conductivity type layer 111. The light-emitting element 11 also includes a protective film 115, which is located on the side opposite to the driving plate 30 and on the sidewalls. An embedded layer 116 is disposed between the first transparent electrode 121 and the protective film 115.

[0046] The first conductivity type layer 111 is formed, for example, from an n-type GaN-based semiconductor material. The active layer 112 has, for example, a multi-quantum-well structure with alternating InGaN and GaN layers, and includes a light-emitting region within the layer. Light in the blue band, for example, above 430 nm and below 500 nm, is extracted from the active layer 112. Light corresponding to wavelengths, for example, in the ultraviolet region (ultraviolet light), can be extracted from the active layer 112. The second conductivity type layer 113 is formed, for example, from a p-type GaN-based semiconductor material. In the light-emitting element 11, the upper surface of the second conductivity type layer 113, i.e., the surface opposite to the active layer 112, serves as the light-emitting surface 11S1 of the light-emitting element 11.

[0047] The first electrode 114 is electrically coupled to the plug 13. The first electrode 114 is, for example, in ohmic contact with the first conductivity type layer 111. The first electrode 114 is formed, for example, using a multilayer film (Ni / Au) comprising nickel (Ni) and gold (Au) or a transparent conductive material such as ITO.

[0048] The protective film 115 is configured to cover the light-emitting surface 11S1 and the sidewalls of the light-emitting element 11. Furthermore, the protective film 115 extends along the surface opposite to the drive plate 30 when viewed from the insulating layer 15. The protective film 115 protects the surface of the light-emitting element 11 and the surface of the insulating layer 15 during the manufacturing process of the light-emitting device 1. The protective film 115 is formed, for example, using alumina (Al2O3).

[0049] The buried layer 116 is configured to fill the gap between the protective film 115, the first transparent electrode 121, and the second transparent electrode 122. The buried layer 116 is formed, for example, using silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or titanium oxide (TiO).

[0050] A first transparent electrode 121 is disposed on the light-emitting surface 11S1 of the light-emitting element 11. The first transparent electrode 121 is configured to cover the second conductivity type layer 113 of the light-emitting element 11 and to be in ohmic contact with the second conductivity type layer 113.

[0051] The first transparent electrode 121 is formed of a material that absorbs ultraviolet light and transmits visible light. Furthermore, it is preferable that the first transparent electrode absorbs light with wavelengths of 280 nm or less and transmits light with wavelengths of 400 nm or more and 700 nm or less. More preferably, the first transparent electrode has a transmittance of less than 10% relative to light with wavelengths of 280 nm or less. The first transparent electrode 121 is formed of a transparent electrode material (such as ITO) or a thin-film metal (such as nickel (Ni) or titanium (Ti)).

[0052] The second transparent electrode 122 is configured to cover the surface 121S1 of the first transparent electrode 121, and the surface 121S1 is opposite to the surface facing the light-emitting surface 11S1. The second transparent electrode 122 electrically couples the light-emitting element 11 and the driving plate 30. The second transparent electrode 122 is formed of a material that transmits visible and ultraviolet light. Preferably, the second transparent electrode 122 has a transmittance of 60 to 90% relative to light with wavelengths below 280 nm. The second transparent electrode 122 is formed, for example, of a transparent electrode material such as Ta-doped Sn1-xGexO2, Ga2O3, SrNbO3, SnO2, SrVO3, or InO.

[0053] Transparent electrode 123 electrically couples the second transparent electrode 122 to the pad electrode 14. Transparent electrode 123 extends through a protective film 115 extending to the upper surface of the insulating layer 15 and makes ohmic contact with the pad electrode 14. Transparent electrode 123 is formed, for example, of a transparent electrode material such as ITO, indium zinc oxide (IZO), tin oxide (SnO), or TiO.

[0054] The plug 13 is configured to contact the first electrode 114 and electrically couple the light-emitting element 11 and the driving board 30. The plug 13 is formed, for example, from copper (Cu), aluminum (Al), tungsten (W), silver (Ag), or alloys thereof.

[0055] In the insulating layer 15, pad electrodes 14 and vias 14V are embedded. Pad electrodes 14 electrically couple the light-emitting element 11 and the driver board 30 via plugs 13. Pad electrodes 14 and vias 14V are each formed, for example, of copper (Cu), aluminum (Al), tungsten (W), silver (Ag), or alloys thereof.

[0056] The insulating layer 15 is formed, for example, from silicon oxide (SiO) or silicon nitride (SiN).

[0057] On the side of the insulating layer 15 adjacent to the drive board 30, an insulating layer 16 is formed to form a bonding surface with the drive board 30, and a pad portion 17 is embedded in the insulating layer 16. The insulating layer 16 is formed, for example, of silicon oxide (SiO) or silicon nitride (SiN). The pad portion 17 is formed, for example, of copper (Cu).

[0058] The buried layer 181 is configured to fill the gap between the protective film 115 and the second transparent electrode 122, as well as the gap between the protective film 115 and the transparent electrode 123. The buried layer 181 is formed, for example, using silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or titanium oxide (TiO).

[0059] The buried layer 182 is configured to cover the second transparent electrode 122 and the transparent electrode 123. The buried layer 182 planarizes the surface of the light-emitting unit 10 opposite to the driving plate 30. The buried layer 182 is formed, for example, using silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or titanium oxide (TiO).

[0060] (Configuration of wavelength conversion unit 20)

[0061] The wavelength conversion unit 20 is configured adjacent to the light-emitting surface 11S1 of the light-emitting unit 10. The wavelength conversion unit 20 includes a protective layer 21 on the upper surface of the buried layer 182 of the light-emitting unit 10. An on-chip lens layer 22 is also provided on the protective layer 21 for each pixel P.

[0062] The protective layer 21 protects the surface of the light-emitting device 1 and is formed, for example, using silicon oxide (SiO) or silicon nitride (SiN).

[0063] The on-chip lens layer 22 is positioned on the side opposite to the driving plate 30 when viewed from the light-emitting element 11. The on-chip lens layer 22 collects or emits light emitted from the active layer 112 of one or more light-emitting elements 11. The on-chip lens layer 22 comprises a material with optical transparency and includes a monolayer film comprising any one of silicon oxide (SiO), silicon nitride (SiN), and silicon oxynitride (SiON), or a laminated film comprising two or more of these. Here, the on-chip lens layer 22 corresponds to an example of a "lens" according to one aspect of this disclosure.

[0064] (Configuration of driver board 30)

[0065] The driver board 30 includes, for example, a support substrate 31, an interlayer insulating layer 32, an insulating layer 33, and pad portions 34. The support substrate 31 includes, for example, silicon (Si). The interlayer insulating layer 32 is disposed on the support substrate 31 and includes vias for electrically coupling multiple wiring layers (e.g., wiring layers M1, M2, M3, M4, and M5) and electrically coupling between the wiring layers. The insulating layer 33 forms a bonding surface with the light-emitting unit 10. The pad portions 34 are embedded in the insulating layer 33. In the driver board 30, for example, a driving circuit for driving the light-emitting element 11 is embedded in the support substrate 31. The driver board 30 corresponds to an example of a "substrate" according to one aspect of this disclosure.

[0066] The interlayer insulating layer 32 is formed, for example, using silicon oxide (SiO) or silicon nitride (SiN).

[0067] The vias that electrically couple wiring layers M1, M2, M3, M4, and M5, and electrically couple wiring layers to each other, are formed, for example, using copper (Cu), aluminum (Al), tungsten (W), silver (Ag), or alloys thereof. The insulating layer 33 is formed, for example, of silicon oxide (SiO) or silicon nitride (SiN). The pad portions are formed, for example, using copper (Cu).

[0068] [1-2. Manufacturing method of light-emitting device]

[0069] The light-emitting device 1 of this embodiment can be manufactured, for example, as follows. Figures 2A to 2G An exemplary manufacturing process for the light-emitting device 1 is shown.

[0070] First, for example, a sapphire substrate is prepared as a growth substrate 41, and then an epitaxial crystal is grown by means of methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), and a first conductivity type layer 111, an active layer 112, and a second conductivity type layer 113 are sequentially formed on the growth substrate 41.

[0071] Next, as Figure 2AAs shown, a first transparent electrode 121 is formed to contact a second conductivity type layer 113, thereby obtaining a laminated film 110. The first transparent electrode 121 is obtained by depositing indium tin oxide, for example, using sputtering or vapor deposition.

[0072] Subsequently, the growth substrate 41 is peeled off from the first conductivity type layer 111, and then as follows: Figure 2B As shown, the laminated film 110 is flipped and bonded to the support substrate 42, such that the first transparent electrode 121 faces the support substrate 42. Next, the first electrode 114 is formed to contact the upper surface of the first conductivity type layer 111. Subsequently, a buried layer 43 is formed using silicon oxide or the like to cover the support substrate 42, the laminated film 110, and the first electrode 114. Through this process, the laminated film 110 and the first electrode 114 are encapsulated by the buried layer 43.

[0073] Next, an insulating layer 15 is formed in which one or more plugs 13 and a plurality of pad electrodes 14 are embedded, such that the plugs 13 are aligned with the exposed positions of the first electrode 114. Furthermore, an insulating layer 16 is formed on the insulating layer 15 in which a plurality of pad portions 17 are embedded. At this time, the plurality of plugs 13 and the plurality of pad electrodes 14 are bonded to the plurality of pad portions 17. Thus, a light-emitting unit 10 comprising a laminated film 110, an insulating layer 15, an insulating layer 16, and an embedded layer 43 is obtained.

[0074] Subsequently, as Figure 2C As shown, a separately prepared driver board 30 is bonded to the upper surface of the light-emitting unit 10, namely the upper surface of the insulating layer 16 and the upper surface of the pad portion 17 (performing a so-called hybrid bonding). In the hybrid bonding, the pad portion 17 and the pad portion 34 are bonded to each other, and the insulating layer 16 and the insulating layer 33 are bonded to each other.

[0075] Subsequently, the light-emitting unit 10 and the driving plate 30, which are joined together, are flipped so that the driving plate 30 is positioned below, and then the supporting substrate 42 is removed. Next, as... Figure 2D As shown, the laminated film 110 and the first electrode 114 are etched, for example, by reactive ion etching (RIE) to form a mesa shape. Subsequently, a buried layer 116 is formed on the upper surface of the laminated film 110. Next, a protective film 115 is formed along the sidewalls of the laminated film 110, the upper surface and sidewalls of the first transparent electrode 121, and the upper surface of the insulating layer 15. Through this process, a light-emitting element 11 comprising a first conductivity type layer 111, an active layer 112, a second conductivity type layer 113, the first electrode 114, the protective film 115, and the buried layer 116 is fabricated. Subsequently, a buried layer 181 is formed to cover the protective film 115.

[0076] Subsequently, as Figure 2EAs shown, the protective film 115, buried layer 116, and buried layer 181 on the upper surface of the first transparent electrode 121 are removed, and a second transparent electrode 122 is formed to contact the exposed portion of the first transparent electrode 121. Furthermore, the protective film 115, buried layer 181, and insulating layer 15 are partially removed to expose a portion of the upper surface of the pad electrode 14. Thereafter, a transparent electrode 123 is formed to contact the second transparent electrode 122 and the exposed portion of the pad electrode 14.

[0077] Next, as Figure 2F As shown, an embedded layer 182 is formed to cover the second transparent electrode 122 and the transparent electrode 123.

[0078] Subsequently, as Figure 2G As shown, the protective layer 21 is sequentially formed using, for example, a CVD method. Subsequently, the on-chip lens layer 22 is bonded to the protective layer 21. This completes the process. Figure 1 The light-emitting device 1 shown in the figure.

[0079] [1-3. Disabling defective points in the light-emitting device]

[0080] Figure 3 schematically shown Figure 1 The exemplary cross-sectional configuration of the light-emitting device 1 shown in the figure after the defect point is disabled (light-emitting device 2). Figure 4 This is a schematic cross-sectional view showing... Figure 3 An exemplary configuration of the light-emitting unit 10 of the light-emitting device 2 is shown in the figure.

[0081] like Figure 4 As shown, a pulsed UV laser emitted from the on-chip lens layer 22 toward the light-emitting element 11 of the light-emitting device 1 irradiates the light-emitting device 2, causing the first transparent electrode 121 to be ablated by absorbing the ultraviolet light. Through this process, a cavity 121C is formed in the light-emitting element 11.

[0082] A cavity 121C is formed between the first transparent electrode 121 and the second transparent electrode 122. By forming the cavity 121C, the first transparent electrode 121 and the second transparent electrode 122 are physically and electrically separated from each other.

[0083] In the plan view, the second transparent electrode 122 overlaps with the first transparent electrode 121 by a width L1. The cavity 121C has a width L2 that is smaller than the width L1.

[0084] The pulsed UV laser used is light with a wavelength that transmits through the material forming the embedded layer 182, the protective layer 21, and the on-chip lens layer 22. Specifically, for example, KrF excimer lasers, XeCl excimer lasers, Nb:YAG lasers, etc., are used as pulsed UV lasers.

[0085] As described above, by irradiating the light-emitting device 1 with a pulsed UV laser, the light-emitting device 2 is formed, thereby electrically isolating the light-emitting element 11 and the driving plate 30 from each other and disabling the defect points.

[0086] [1-4. Functions and Effects]

[0087] The light-emitting device 1 of this embodiment includes a driving plate 30, a light-emitting element 11 disposed on the driving plate 30, a first transparent electrode 121 disposed in contact with the light-emitting element 11, and a second transparent electrode 122 disposed in contact with the first transparent electrode 121 to cover the first transparent electrode 121. The light-emitting element 11 is electrically coupled to the driving plate 30 via the first transparent electrode 121 and the second transparent electrode 122. The first transparent electrode 121 absorbs ultraviolet light and transmits visible light. In addition, the second transparent electrode 122 transmits both visible light and ultraviolet light. By irradiating the light-emitting element 11 of the light-emitting device 1 with a pulsed UV laser, the first transparent electrode 121 is ablated to form a cavity 121C between the first transparent electrode 121 and the second transparent electrode 122, similar to the light-emitting device 2, and defects in the light-emitting element 11 are disabled. This will be described below.

[0088] If a defect occurs in a portion of the driving element of the driver board 30, a portion of the multiple light-emitting elements may become a bright spot or a dark spot.

[0089] If the substrate becomes defective after bonding, the problem cannot be resolved even if the substrate is inspected during manufacturing before bonding.

[0090] Therefore, in the light-emitting device 1 of this embodiment, as described above, a first transparent electrode 121 that absorbs ultraviolet light and transmits visible light and a second transparent electrode 122 that transmits both visible and ultraviolet light are sequentially disposed on the light-emitting surface 11S1 of the light-emitting element 11. In this way, a cavity 121C can be formed by irradiating the portions of the first transparent electrode 121 and the second transparent electrode 122 that correspond to bright or dark spots of the light-emitting element 11 caused by defects in the driving element, etc., with a pulsed laser. Therefore, the bright or dark spots of the light-emitting element 11 can be disabled.

[0091] The defective point disabling process of the light-emitting element 11 can be performed after the drive board 30 is attached. Therefore, in the light-emitting device 1 of this embodiment, bright spots or dark spots of the light-emitting element 11 that occur after the drive board 30 is attached can be disabled. This makes it possible to solve the above-mentioned problems.

[0092] Disabling bright and dark spots of the light-emitting element 11 prevents quality degradation of the light-emitting device 1, which includes multiple light-emitting elements 11. Furthermore, it is expected that power consumption of the light-emitting device 1 will be suppressed and manufacturing yield will be improved.

[0093] <2. Variations>

[0094] Next, variations 1 to 3 and application examples of this disclosure will be described. It should be noted that components corresponding to the components of the light-emitting device 1 in the above embodiments are indicated by the same reference numerals and will not be described again.

[0095] [2-1. Variation Example 1]

[0096] Figure 5 An exemplary cross-sectional view of a light-emitting device (light-emitting device 3) according to a variation of the present disclosure is shown schematically.

[0097] In the above embodiment, the light-emitting element 11 has a structure in which a first conductivity type layer 111, an active layer 112, and a second conductivity type layer 113 are stacked sequentially in the Z-axis direction starting from the driving plate 30. In contrast, in the light-emitting device 3 of this modified example, the light-emitting element 11a has a structure in which a second conductivity type layer 113a, an active layer 112a, and a first conductivity type layer 111a are stacked sequentially in the Z-axis direction starting from the driving plate 30.

[0098] Apart from the points mentioned above, the configuration of the light-emitting device 3 is basically the same as that of the light-emitting device 1 in the above embodiment. Even in this configuration, the light-emitting device 3 enables the same effect as in the above embodiment.

[0099] [2-2. Variation Example 2]

[0100] Figure 6 An exemplary cross-sectional configuration of a light-emitting device (light-emitting device 4) according to a variation 2 of this disclosure is schematically shown.

[0101] In the above embodiment, the light-emitting element 11 has a structure in which a first conductivity type layer 111, an active layer 112, and a second conductivity type layer 113 are stacked sequentially in the Z-axis direction starting from the driving plate 30. In the above embodiment, the wavelength conversion unit 20 includes an on-chip lens layer 22. In contrast, in the light-emitting device 4 of this modified example, the light-emitting element 11b has a structure in which a second conductivity type layer 113b, an active layer 112b, and a first conductivity type layer 111b are stacked sequentially in the Z-axis direction starting from the driving plate 30. Furthermore, the light-emitting device 4 includes a nanophotonic layer 23 formed of silicon or the like on the protective layer 21 of the wavelength conversion unit 20.

[0102] Apart from the points mentioned above, the configuration of the light-emitting device 4 is basically the same as that of the light-emitting device 1 in the above embodiment. Even in this configuration, the light-emitting device 4 enables the same effect as in the above embodiment.

[0103] [2-3. Variation Example 3]

[0104] Figure 7An exemplary cross-sectional view of a light-emitting device (light-emitting device 5) according to a variation 3 of this disclosure is schematically shown.

[0105] In the above embodiments, examples were described where the light emitted from the light-emitting element 11 is blue light or ultraviolet light; however, this is not limiting. In the light-emitting device 5 of this modified example, light-emitting elements 11c (11cR, 11cG, and 11cB) are provided for multiple pixels P (Pr, Pg, and Pb). The red pixel Pr includes the light-emitting element 11cR, in which the light emitted from the active layer 112 is red light (red light). The green pixel Pg includes the light-emitting element 11cG, in which the light emitted from the active layer 112 is green light (green light). The blue pixel Pb includes the light-emitting element 11cB, in which the light emitted from the active layer 112 is blue light (blue light). The three types of light-emitting elements 11c are provided for each of the three layers of the embedded layer 182c in the Z-axis direction.

[0106] Apart from the points mentioned above, the configuration of the light-emitting device 5 is basically the same as that of the light-emitting device 1 in the above embodiment. Even in this configuration, the light-emitting device 5 enables the same effect as in the above embodiment.

[0107] <3. Application Examples>

[0108] (Application Example 1)

[0109] Figure 8 This is a perspective view illustrating an exemplary schematic configuration of an image display device (image display device 100). The image display device 100 is a so-called LED display, which includes light-emitting devices (e.g., light-emitting device 1) as display pixels, as disclosed herein. Figure 8 As shown, for example, the image display device 100 includes a display panel 120 and a control circuit 140 for driving the display panel 120.

[0110] The display panel 120 includes a mounting plate 120A and a counter plate 120B stacked on top of each other. The surface of the counter plate 120B is an image display surface, which includes a display area (display portion 100A) in the central part and a frame portion 100B surrounding the display portion 100A. The frame portion 100B is a non-display area.

[0111] Figure 9 An exemplary wiring layout is shown for the area corresponding to the display portion 100A on the surface of the mounting plate 120A facing the opposing plate 120B. For example, as... Figure 9As shown, in the area corresponding to the display portion 100A on the surface of the mounting plate 120A, a plurality of data lines 134 are formed. These data lines 134 extend in a predetermined direction and are arranged parallel to each other at a predetermined spacing. Furthermore, in the area corresponding to the display portion 100A on the surface of the mounting plate 120A, a plurality of scan lines 135 are formed. These scan lines 135 extend in a direction intersecting (e.g., orthogonal to) the data lines 134 and are arranged parallel to each other, for example, at a predetermined spacing. The data lines 134 and scan lines 135 comprise, for example, a conductive material such as Cu.

[0112] Scan wiring 135 is formed, for example, on the outermost layer, which is, for example, an insulating layer (not shown) formed on the surface of a substrate. It should be noted that the substrate of mounting plate 120A is, for example, a silicon substrate or a resin substrate, and the insulating layer on the substrate includes, for example, SiN, SiO, alumina (AlO), or a resin material. On the other hand, data wiring 134 is formed in a layer different from the outermost layer including scan wiring 135 (e.g., a layer below the outermost layer). For example, data wiring 134 is formed in an insulating layer disposed on the substrate.

[0113] The area where the data wiring 134 intersects with the scan wiring 135 and the vicinity thereof are used as display pixels 136, and a plurality of display pixels 136 are arranged in a matrix in the display portion 100A. Each display pixel 136 includes, for example, color pixels Pr, Pg, and Pb of the light-emitting device 1.

[0114] In the light-emitting device 1, for example, a pair of terminal electrodes are provided for each of the color pixels Pr, Pg, and Pb, or one terminal electrode is shared by the color pixels Pr, Pg, and Pb, and the other terminal electrode is provided for each of the color pixels Pr, Pg, and Pb. One terminal electrode is electrically coupled to the data wiring 134, and the other terminal electrode is electrically coupled to the scan wiring 135. For example, one terminal electrode is electrically coupled to a pad electrode 134B located at the end of a branch 134A on the data wiring 134. Furthermore, for example, the other terminal electrode is electrically coupled to a pad electrode 135B located at the end of a branch 135A on the scan wiring 135.

[0115] Each of pad electrodes 134B and 135B is formed, for example, on the outermost layer, and, for example, as shown in the image. Figure 9 As shown, they are disposed at the portion where the light-emitting device 1 is mounted. Here, the pad electrodes 134B and 135B include, for example, a conductive material such as gold (Au).

[0116] Mounting plate 120A is also provided with, for example, a plurality of posts (not shown), which adjust the distance between mounting plate 120A and opposing plate 120B. The posts may be located in the area facing display portion 100A or in the area facing frame portion 100B.

[0117] The opposing plate 120B can be, for example, a glass substrate or a resin substrate. The surface of the opposing plate 120B adjacent to the light-emitting device 1 can be flat; however, it is preferred that the surface is rough. The rough surface can be provided over the entire area facing the display portion 100A, or it can be provided only in the area facing the display pixel 136. The rough surface has fine bumps and depressions onto which light emitted from the color pixels Pr, Pg, and Pb is incident. The bumps and depressions of the rough surface can be created, for example, by sandblasting or dry etching.

[0118] Control circuit 140 drives each display pixel 136 (each light-emitting device 1) based on the video signal. Control circuit 140 includes, for example, a data driver driving data wiring 134 coupled to the display pixel 136 and a scan driver driving scan wiring 135 coupled to the display pixel 136. Figure 9 As shown, for example, the control circuit 140 may be disposed separately from the display panel 120 and may be coupled to the mounting plate 120A via wiring. Alternatively, the control circuit 140 may be mounted on the mounting plate 120A.

[0119] (Application Example 2)

[0120] Figure 10 This is a perspective view illustrating another exemplary configuration of an image display device (image display device 200) including light-emitting devices (e.g., light-emitting device 1) of the present disclosure. Image display device 200 is a so-called video wall display, which includes multiple light-emitting devices using LEDs as light sources. Figure 10 As shown, for example, the image display device 200 includes a display panel 220 and a control circuit 240 for driving the display panel 220.

[0121] Display panel 220 includes a mounting plate 220A and a counter plate 220B stacked on top of each other. The surface of the counter plate 220B is an image display surface, which includes a display portion in a central part and a frame portion surrounding the display portion (neither shown). The frame portion is a non-display area. The counter plate 220B is arranged, for example, facing the mounting plate 220A with a predetermined gap between them. Alternatively, the counter plate 220B may contact the upper surface of the mounting plate 220A.

[0122] Figure 11 An exemplary configuration of mounting plate 220A is schematically shown. (As shown) Figure 11As shown, for example, mounting plate 220A includes a plurality of unit plates 250 arranged in a tile-like manner. Figure 11 In this case, mounting plate 220A includes nine unit plates 250. However, the number of unit plates 250 may be ten or more, or eight or fewer.

[0123] Figure 12 An exemplary configuration of the unit board 250 is shown. The unit board 250 includes, for example, a plurality of light-emitting devices 1 arranged in a tile-like manner and a support substrate 260 supporting the light-emitting devices 1. Each unit board 250 also includes a control substrate (not shown). The support substrate 260 is, for example, a metal frame (metal plate) or a wiring board. When the support substrate 260 is a wiring board, it can also be used as a control substrate. In this case, one or both of the support substrate 260 and the control substrate are electrically coupled to the light-emitting devices 1.

[0124] (Application Example 3)

[0125] Figure 13 The appearance of the transparent display 300 is shown. The transparent display 300 includes, for example, a display portion 310, an operation portion 311, and a housing 312. The display portion 310 includes a light-emitting device (e.g., light-emitting device 1) disclosed herein. The transparent display 300 is configured to display image information and text information while transmitting light through the background of the display portion 310.

[0126] The transparent display 300 includes a light-transmitting substrate as a mounting plate. Each electrode disposed in the light-emitting device 1 is formed using a conductive material with optical transparency, similar to the mounting plate. Alternatively, each electrode is made less visible by increasing the wiring width or decreasing the wiring thickness. Furthermore, the transparent display 300 achieves black display by, for example, superimposing a liquid crystal layer with driving circuitry, and switches between the transmission mode and the black display mode by controlling the light distribution direction of the liquid crystal.

[0127] The present technology has been described with reference to embodiments, variations 1 to 3, and application examples; however, the present technology is not limited to the above embodiments and various modifications can be made. For example, in the above embodiments, examples have been described where the light emitted from the light-emitting element 11 is blue light or ultraviolet light; however, this is not limiting. For example, the light-emitting device 1 may include light-emitting elements that emit two or more types of light, such as blue light and green light or ultraviolet light and green light, which may also be used.

[0128] Furthermore, in the above embodiments, the components constituting the light-emitting device 1, etc., have been specifically described; however, the light-emitting device 1 does not necessarily include all components. The light-emitting device 1 may also include other components.

[0129] Furthermore, in the above embodiments, examples have been described of light-emitting elements, etc., being disposed on a driver board including a driving circuit; however, this disclosure is not limited thereto. For example, light-emitting elements, etc., may be disposed on another substrate that does not include a driving circuit, and the light-emitting elements may be coupled to a driving circuit included in a driver board separate from said other substrate.

[0130] It should be noted that the effects described in this article are illustrative only and are not limited to those described, and other effects may be provided.

[0131] This technology can have the following configuration. According to this technology with the following configuration, a substrate, a light-emitting element disposed on the substrate, a first transparent electrode disposed in contact with the light-emitting element, and a second transparent electrode disposed in contact with the first transparent electrode to cover the first transparent electrode are provided. The light-emitting element is electrically coupled to the substrate via the first and second transparent electrodes. The first transparent electrode absorbs ultraviolet light and transmits visible light. The second transparent electrode transmits both visible and ultraviolet light. The first transparent electrode is ablated by ultraviolet light irradiation, thereby forming a cavity between the first and second transparent electrodes and disabling defect points. As a result, defect points of the light-emitting element on a defective substrate can be disabled, maintaining the quality of the entire light-emitting device.

[0132] (1) A light-emitting device, comprising: Light-emitting element, including a light-emitting surface; The first transparent electrode is configured to contact the light-emitting surface and absorb ultraviolet light and transmit visible light. The second transparent electrode is configured to contact the surface of the first transparent electrode that is opposite to the surface of the first transparent electrode facing the light-emitting surface, and transmits both visible light and ultraviolet light.

[0133] (2) The light-emitting device according to claim (1), wherein the first transparent electrode absorbs light having a wavelength of less than 280 nm and transmits light having a wavelength of more than 400 nm and less than 700 nm.

[0134] (3) The light-emitting device according to claim (1) or (2), wherein the first transparent electrode comprises one or more of indium tin oxide, titanium and nickel.

[0135] (4) The light-emitting device according to any one of claims (1) to (3), wherein the second transparent electrode comprises one or more of SnGaO, GaO, SrNbO and InO.

[0136] (5) The light-emitting device according to any one of claims (1) to (4) further includes a substrate, wherein, The second transparent electrode electrically couples the substrate and the light-emitting element.

[0137] (6) The light-emitting device according to any one of claims (1) to (5) further includes a lens disposed at a position opposite to the light-emitting surface of the light-emitting element.

[0138] (7) The light-emitting device according to claim (6), wherein the lens comprises one or both of SiO2 and SiN.

[0139] (8) The light-emitting device according to any one of claims (1) to (7), wherein the light-emitting element has a mesa shape.

[0140] (9) An image display device, comprising

[0141] The light-emitting device includes: Light-emitting element, including a light-emitting surface; The first transparent electrode is configured to contact the light-emitting surface and absorb ultraviolet light and transmit visible light. The second transparent electrode is configured to contact the surface of the first transparent electrode that is opposite to the surface of the first transparent electrode facing the light-emitting surface, and transmits both visible light and ultraviolet light.

[0142] This application claims the benefit of Japanese priority patent application JP2024-058255, filed with the Japan Patent Office on March 29, 2024, the entire contents of which are incorporated herein by reference.

[0143] Those skilled in the art will understand that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors, all of which are within the scope of the appended claims and their equivalents.

Claims

1. A light-emitting device, comprising: Light-emitting element, including a light-emitting surface; The first transparent electrode is configured to contact the light-emitting surface and absorb ultraviolet light and transmit visible light. The second transparent electrode is configured to contact the surface of the first transparent electrode that is opposite to the surface of the first transparent electrode facing the light-emitting surface, and transmits both visible light and ultraviolet light.

2. The light-emitting device according to claim 1, wherein, The first transparent electrode absorbs light with wavelengths below 280 nm and transmits light with wavelengths above 400 nm and below 700 nm.

3. The light-emitting device according to claim 1, wherein, The first transparent electrode comprises one or more of indium tin oxide, titanium, and nickel.

4. The light-emitting device according to claim 1, wherein, The second transparent electrode includes one or more of SnGaO, GaO, SrNbO, and InO.

5. The light-emitting device according to claim 1, further comprising a substrate, wherein, The second transparent electrode electrically couples the substrate and the light-emitting element.

6. The light-emitting device according to claim 1 further includes a lens, the lens being disposed at a position opposite to the light-emitting surface of the light-emitting element.

7. The light-emitting device according to claim 6, wherein, The lens comprises one or both of SiO2 and SiN.

8. The light-emitting device according to claim 1, wherein, The light-emitting element has a mesa shape.

9. An image display device, comprising: The light-emitting device includes: Light-emitting element, including a light-emitting surface; The first transparent electrode is configured to contact the light-emitting surface and absorb ultraviolet light and transmit visible light. The second transparent electrode is configured to contact the surface of the first transparent electrode that is opposite to the surface of the first transparent electrode facing the light-emitting surface, and transmits both visible light and ultraviolet light.

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