Semiconductor device

Abstract

The present application suppresses temperature rise of a semiconductor device. The semiconductor device includes a first snubber circuit element connected in parallel to a first switching element, a second snubber circuit element connected in parallel to a second switching element, an electrode P side connected to the first switching element, and an electrode N side connected to the second switching element, the first switching element and the second switching element being connected in series, the first snubber circuit element being connected to the electrode N side, and the second snubber circuit element being connected to the electrode P side.

Description

Technical Field

[0001] The technology disclosed in this application relates to semiconductor technology. Background Technology

[0002] In semiconductor modules such as reverse-conducting IGBTs (RC-IGBTs), which combine the functions of both an insulated gate bipolar transistor (IGBT) and a freewheeling diode in a single element, direct lead bonding (DLB) wiring presents the following challenges: the path for dissipating heat from the switching element during switching is limited, leading to a tendency for electrode temperatures to rise. Furthermore, to effectively suppress surge voltages generated during switching, it is desirable to configure a snubber circuit in parallel near the switching element. Here, the snubber circuit is a protective circuit designed to prevent malfunctions caused by a sharp rise in voltage during switching.

[0003] In contrast, for example, Patent Document 1 (Japanese Patent Application Publication No. 2018-56221) discloses a semiconductor module in which a switching element and a circuit element are connected in parallel between two metal plates facing each other in the vertical direction, and the circuit element is used as a passive element such as a resistor or capacitor to form a buffer circuit.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2018-56221 Summary of the Invention

[0007] The technical problem that the invention aims to solve

[0008] In the prior art, since the input and output sides of the circuit elements joined between two metal plates opposite each other in the vertical direction are both single wires, the structure is limited to a buffer circuit that can be joined by a single wire such as an RC or discharge-type RCD.

[0009] As a result, the heat generated by the switching elements accompanying the switch cannot be adequately dissipated, causing the temperature of the semiconductor device to rise.

[0010] The technology disclosed in this application specification was developed in view of the above-mentioned problems and is a technology for suppressing temperature rise in semiconductor devices.

[0011] Technical solutions to solve technical problems

[0012] The semiconductor device, as a first aspect of the technology disclosed in this application, includes: a first conductive pattern and a second conductive pattern disposed on the upper surface of an insulating substrate, spaced apart from each other; a first switching element disposed on the upper surface of the first conductive pattern by a bonding material; a second switching element disposed on the upper surface of the second conductive pattern by a bonding material; a first buffer circuit element connected in parallel with the first switching element; a second buffer circuit element connected in parallel with the second switching element; an electrode P side connected to the first switching element; and an electrode N side connected to the second switching element, wherein the first switching element and the second switching element are connected in series, the first buffer circuit element is connected to the electrode N side, and the second buffer circuit element is connected to the electrode P side.

[0013] Invention Effects

[0014] According to at least a first aspect of the technology disclosed in this application, since the buffer circuit element has multiple heat dissipation paths, multiple paths are formed for dissipating heat generated by the switching element during switching. Therefore, heat dissipation is improved, and the electrode temperature can be reduced.

[0015] Furthermore, the objectives, features, aspects, and advantages related to the technology disclosed in this application will become clearer through the detailed description and accompanying drawings shown below. Attached Figure Description

[0016] Figure 1 This is a circuit diagram illustrating a structural example of a semiconductor device involved in an embodiment.

[0017] Figure 2 This is a cross-sectional view schematically illustrating a structural example of a semiconductor device according to an embodiment.

[0018] Figure 3 This is a cross-sectional view schematically illustrating an example of the internal structure of a non-discharge type RCD buffer circuit.

[0019] Figure 4 This is a cross-sectional view schematically illustrating an example of the internal structure of a non-discharge type RCD buffer circuit.

[0020] Figure 5 This is a cross-sectional view schematically illustrating a structural example of a semiconductor device according to an embodiment.

[0021] Figure 6 This is a circuit diagram illustrating a structural example of a semiconductor device involved in an embodiment.

[0022] Figure 7 This is a cross-sectional view schematically illustrating a structural example of a semiconductor device according to an embodiment.

[0023] Figure 8 This is a cross-sectional view schematically illustrating a structural example of a semiconductor device according to an embodiment.

[0024] Figure 9 This is a circuit diagram illustrating a structural example of a semiconductor device involved in an embodiment.

[0025] Figure 10 This is a circuit diagram illustrating other structural examples of the semiconductor device involved in the implementation.

[0026] Figure 11 This is a cross-sectional view schematically illustrating a structural example of a semiconductor device according to an embodiment.

[0027] Figure 12 This is a cross-sectional view schematically illustrating an example of the internal structure of the secondary circuit elements in a boost converter.

[0028] Figure 13 This is a cross-sectional view schematically illustrating an example of the internal structure of the secondary circuit elements in a step-down circuit. Detailed Implementation

[0029] Hereinafter, embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features are shown for the purpose of illustrating the technology, but these are merely examples and are not all features necessary for implementing the embodiments.

[0030] Furthermore, the accompanying drawings are schematic and, for ease of explanation, structural omissions or simplifications have been appropriately made. Additionally, the dimensions and positions of structures shown in different drawings are not necessarily accurately depicted and may be varied appropriately. Moreover, in drawings such as top views that are not sectional views, shaded lines are sometimes added to facilitate understanding of the embodiments.

[0031] Furthermore, in the following descriptions, the same structural elements are labeled with the same numbers and illustrated, and their names and functions are also identical. Therefore, to avoid repetition, their detailed descriptions are sometimes omitted.

[0032] Furthermore, in the description of this application, when a structural element is described as "including," "comprising," or "having," unless otherwise specified, it is not an exclusive statement excluding the existence of other structural elements.

[0033] Furthermore, in the description described in this application, ordinal numbers such as "first" or "second" are sometimes used. However, these terms are used for convenience in understanding the content of the embodiments, and the content of the embodiments is not limited to the order that may be generated by these ordinal numbers.

[0034] Furthermore, in the descriptions contained in this application, terms such as "upper," "lower," "left," "right," "side," "bottom," "top," or "back" are sometimes used to indicate a specific position or direction. However, these terms are used for convenience in understanding the content of the embodiments and are not related to the actual position or direction when implementing the embodiments.

[0035] Furthermore, in the description of this application, when it is described as "...the upper surface" or "...the lower surface", it includes not only the upper or lower surface of the structural element that is the object itself, but also the state in which other structural elements are formed on the upper or lower surface of the structural element that is the object. That is, for example, when it is described as "B provided on the upper surface of A", it does not exclude the existence of another structural element "C" between A and B.

[0036] <Implementation Method 1>

[0037] The semiconductor device involved in this embodiment will be described below.

[0038] <On the structure of semiconductor devices>

[0039] Figure 1 This is a circuit diagram illustrating a structural example of the semiconductor device according to this embodiment. Furthermore, Figure 2 This is a cross-sectional view schematically illustrating a structural example of the semiconductor device involved in this embodiment.

[0040] like Figure 1 As shown in the example, an integrated switching element 4a, such as an RC-IGBT, and an integrated switching element 5a, such as an RC-IGBT, and a freewheeling diode, are connected in series. The integrated switching element 4a is formed by connecting an IGBT 42 and a freewheeling diode 44 in reverse parallel. Similarly, the integrated switching element 5a is formed by connecting an IGBT 52 and a freewheeling diode 54 in reverse parallel.

[0041] The integrated switching element 4a is connected in parallel with the buffer capacitor 6b and the buffer diode 6c on the upper arm side. The buffer capacitor 6b and the buffer diode 6c are connected in series. The buffer capacitor 6b is positioned closer to the electrode P side 1a than the buffer diode 6c.

[0042] The integrated switching element 5a is connected in parallel with the buffer capacitor 7b and the buffer diode 7c on the lower arm side. The buffer capacitor 7b is connected in series with the buffer diode 7c. The buffer capacitor 7b is positioned closer to electrode N side 3 than the buffer diode 7c.

[0043] Electrode N-side 3 is connected to the anode side of freewheeling diode 54 and the cathode side of snubber diode 7c. Furthermore, electrode N-side 3 is connected between snubber capacitor 6b and snubber diode 6c via snubber resistor 6d on the upper arm side. Snubber capacitor 6b, snubber diode 6c, and snubber resistor 6d constitute the non-discharge type RCD snubber circuit element 6a on the upper arm side. Electrode N-side 3 is connected to wiring branching off from the output side of the non-discharge type RCD snubber circuit element 6a.

[0044] Electrode P-side 1a is connected to the cathode side of freewheeling diode 44 and the anode side of snubber diode 6c. Furthermore, electrode P-side 1a is connected between snubber capacitor 7b and snubber diode 7c via snubber resistor 7d on the lower arm side of electrode P-side 1b. Snubber capacitor 7b, snubber diode 7c, and snubber resistor 7d constitute the non-discharge type RCD snubber circuit element 7a on the lower arm side. Electrode P-side 1a is connected to electrode P-side 1b, which branches off from the output side of the non-discharge type RCD snubber circuit element 7a.

[0045] In addition, an electrode U-side 2 is connected between the integrated switching element 4a and the integrated switching element 5a.

[0046] like Figure 2 As shown in the example, in a semiconductor device consisting of an upper arm and a lower arm of an intelligent power module (IPM), an insulating substrate 10 is bonded to the upper surface of a base substrate 11, and conductive patterns 9a on the upper arm side and conductive patterns 9b on the lower arm side are bonded to the upper surface of the insulating substrate 10 in a spaced-apart manner.

[0047] Then, on the upper surface of conductive pattern 9a, an integral switching element 4a and a non-discharge RCD buffer circuit element 6a with a single input wire but multiple output wires are connected in parallel (connected in parallel in the circuit), both bonded by conductive bonding material 8. Similarly, on the upper surface of conductive pattern 9b, an integral switching element 5a and a non-discharge RCD buffer circuit element 7a with a single input wire but multiple output wires are connected in parallel (connected in parallel in the circuit), both bonded by conductive bonding material 8. Here, the bonding wires are wires used to bond the conductive bonding material. From this point forward, it will be assumed that all bonding uses conductive bonding material 8.

[0048] Electrode N side 3 is connected to the buffer capacitor 7b on the lower arm side of the non-discharge type RCD buffer circuit element 7a, the integrated switch element 5a on the lower arm side, and the buffer resistor 6d on the upper arm side of the non-discharge type RCD buffer circuit element 6a through conductive bonding material 8.

[0049] Electrode U-side 2 is bonded to the conductive pattern 9b on the lower arm side and connected to the integrated switching element 4a and the non-discharge RCD buffer circuit element 6a via conductive bonding material 8. Electrode P-side 1a is bonded to the conductive pattern 9a on the upper arm side. Electrode P-side 1b is bonded to the conductive pattern 9a on the upper arm side and the buffer resistor 7d on the lower arm side of the non-discharge RCD buffer circuit element 7a. Then, the entire semiconductor device is sealed with resin sealing material 12.

[0050] Figure 3 and Figure 4 This is a cross-sectional view schematically illustrating an example of the internal structure of a non-discharge type RCD buffer circuit element.

[0051] like Figure 3 As shown in the example, the non-discharge type RCD buffer circuit element 6a has a buffer capacitor 6b on the input side and a buffer resistor 6d connected in series with the buffer capacitor 6b on the output side. Furthermore, the non-discharge type RCD buffer circuit element 6a has a buffer diode 6c on the output side (the wiring connected to electrode N side 3), which branches off from between the buffer capacitor 6b and the buffer resistor 6d. The buffer resistor 6d is connected in parallel with the buffer diode 6c. In other words, the non-discharge type RCD buffer circuit element 6a has a buffer capacitor 6b on the input side and a buffer diode 6c connected in series with the buffer capacitor 6b on the output side. Furthermore, the non-discharge type RCD buffer circuit element 6a has a buffer resistor 6d on the output side (the wiring connected to electrode N side 3), which branches off from between the buffer capacitor 6b and the buffer diode 6c. Figure 3 As shown in the example, the non-discharge type RCD buffer circuit element 6a has a single connection wire on the input side and two connection wires on the output side.

[0052] In addition, such as Figure 4 As shown in the example, the non-discharge type RCD snubber circuit element 7a has a snubber diode 7c on the input side and a snubber capacitor 7b connected in series with the snubber diode 7c on the output side. Furthermore, the non-discharge type RCD snubber circuit element 7a has a snubber resistor 7d on the output side (the wiring connected to electrode P side 1a), which branches off between the snubber capacitor 7b and the snubber diode 7c. The snubber capacitor 7b and the snubber resistor 7d are connected in parallel. Figure 4As shown in the example, the non-discharge type RCD buffer circuit element 7a has a single connection wire on the input side and two connection wires on the output side.

[0053] As described above, by including a non-discharge type RCD buffer circuit element 6a with a single connection wire on the input side and two connection wires on the output side, and a non-discharge type RCD buffer circuit element 7a, multiple paths are formed for dissipating heat generated by the switching element during switching. Therefore, heat dissipation is improved, and the electrode temperature can be reduced.

[0054] Furthermore, the magnetic energy stored in the electrodes due to electromagnetic induction generated by the accompanying switch can be released through the non-discharge type RCD snubber circuit element 6a and the non-discharge type RCD snubber circuit element 7a. Therefore, surge voltage can be suppressed.

[0055] Furthermore, each time a switching action is performed, the buffer capacitors 6b and 7b will charge and discharge. However, in the non-discharge type RCD buffer circuit element 6a and the non-discharge type RCD buffer circuit element 7a, the current only flows through the buffer resistors 6d and 7d during discharge. Therefore, the loss in the resistors is reduced, which is also suitable for high-frequency switching.

[0056] <Implementation Method 2>

[0057] The semiconductor device according to this embodiment will be described. Furthermore, in the following description, structural elements that are the same as those described in the above embodiments will be illustrated with the same reference numerals, and their detailed descriptions will be appropriately omitted.

[0058] <On the structure of semiconductor devices>

[0059] Figure 5 This is a cross-sectional view schematically illustrating a structural example of the semiconductor device according to this embodiment. In this embodiment, except... Figure 2 In addition to the structure shown, the non-discharge type RCD buffer circuit element 6a is disposed near the terminal portion of electrode U side 2, and the non-discharge type RCD buffer circuit element 7a is disposed near the terminal portion of electrode N side 3.

[0060] That is, in Figure 5 In the conductive pattern 9b, the integrated switch element 4a and the non-discharge RCD buffer circuit element 6a, which are disposed on the upper surface of the conductive pattern 9a, are positioned closer to the terminal portion of the electrode U side 2 than the integrated switch element 4a. Similarly, the integrated switch element 5a and the non-discharge RCD buffer circuit element 7a, which are disposed on the upper surface of the conductive pattern 9b, are positioned closer to the terminal portion of the electrode N side 3 than the integrated switch element 5a.

[0061] By adopting the above structure, the non-discharge type RCD buffer circuit element 6a and the non-discharge type RCD buffer circuit element 7a are arranged near the terminal portion of the electrode, thereby improving heat dissipation.

[0062] <Implementation Method 3>

[0063] The semiconductor device according to this embodiment will be described. Furthermore, in the following description, structural elements that are the same as those described in the above embodiments will be illustrated with the same reference numerals, and their detailed descriptions will be appropriately omitted.

[0064] <On the structure of semiconductor devices>

[0065] Figure 6 This is a circuit diagram illustrating a structural example of the semiconductor device according to this embodiment. Furthermore, Figure 7 This is a cross-sectional view schematically illustrating a structural example of the semiconductor device involved in this embodiment.

[0066] like Figure 6 As shown in the example, a high-frequency switching element 13, such as a SiC-MOSFET (metal-oxide-semiconductor field-effect transistor), is connected in series with a high-frequency switching element 14. The high-frequency switching element 13 is formed by a SiC-MOSFET 13a and a body diode 13b formed between the source and drain due to the structure of the SiC-MOSFET. Similarly, the high-frequency switching element 14 is formed by a SiC-MOSFET 14a and a body diode 14b formed between the source and drain due to the structure of the SiC-MOSFET.

[0067] The high-frequency switching element 13 is connected in parallel with the buffer capacitor 6b and the buffer diode 6c on the upper arm side. The buffer capacitor 6b and the buffer diode 6c are connected in series.

[0068] The high-frequency switching element 14 is connected in parallel with the buffer capacitor 7b and the buffer diode 7c on the lower arm side. The buffer capacitor 7b and the buffer diode 7c are connected in series.

[0069] Electrode N side 3 is connected to the anode side of body diode 14b and the cathode side of buffer diode 7c.

[0070] Electrode P side 1a is connected to the cathode side of body diode 13b and the anode side of buffer diode 6c.

[0071] In addition, an electrode U-side 2 is connected between the high-frequency switching element 13 and the high-frequency switching element 14.

[0072] like Figure 7 As shown in the example, the insulating substrate 10 is bonded to the upper surface of the base substrate 11, and the conductive pattern 9a on the upper arm side and the conductive pattern 9b on the lower arm side are bonded to the upper surface of the insulating substrate 10 in a spaced-apart manner.

[0073] Then, on the upper surface of conductive pattern 9a, high-frequency switching element 13 and non-discharge type RCD buffer circuit element 6a are configured in parallel (connected in parallel on the circuit), both of which are bonded by conductive bonding material 8. Similarly, on the upper surface of conductive pattern 9b, high-frequency switching element 14 and non-discharge type RCD buffer circuit element 7a are configured in parallel (connected in parallel on the circuit), both of which are bonded by conductive bonding material 8.

[0074] Electrode N side 3 is connected to the buffer capacitor 7b on the lower arm side of the non-discharge type RCD buffer circuit element 7a, the high-frequency switching element 14, and the buffer resistor 6d on the upper arm side of the non-discharge type RCD buffer circuit element 6a through conductive bonding material 8.

[0075] Electrode U-side 2 is bonded to the conductive pattern 9b on the lower arm side and connected to the high-frequency switching element 13 and the non-discharge type RCD buffer circuit element 6a via conductive bonding material 8. Electrode P-side 1a is bonded to the conductive pattern 9a on the upper arm side. Electrode P-side 1b is bonded to the conductive pattern 9a on the upper arm side and the buffer resistor 7d on the lower arm side of the non-discharge type RCD buffer circuit element 7a. Then, the entire semiconductor device is sealed with resin sealing material 12.

[0076] In addition, Figure 7 In the middle, the non-discharge type RCD buffer circuit element 6a and the non-discharge type RCD buffer circuit element 7a can also be used with... Figure 5 The same configuration is used. That is, the non-discharge type RCD buffer circuit element 6a can be configured further away from the terminal portion of electrode U side 2 than the high-frequency switching element 13, and the non-discharge type RCD buffer circuit element 7a can be configured further away from the terminal portion of electrode N side 3 than the high-frequency switching element 14.

[0077] As described above, by including a non-discharge type RCD buffer circuit element 6a with a single connection wire on the input side and two connection wires on the output side, and a non-discharge type RCD buffer circuit element 7a, multiple paths are formed for dissipating heat generated by the switching elements during switching. Therefore, heat dissipation is improved, and electrode temperature can be reduced. Furthermore, high-frequency switching is achieved using high-frequency switching elements 13 and 14.

[0078] <Implementation Method 4>

[0079] The semiconductor device according to this embodiment will be described. Furthermore, in the following description, structural elements that are the same as those described in the above embodiments will be illustrated with the same reference numerals, and their detailed descriptions will be appropriately omitted.

[0080] <On the structure of semiconductor devices>

[0081] Figure 8 This is a cross-sectional view schematically illustrating a structural example of the semiconductor device involved in this embodiment.

[0082] like Figure 8 As shown in the example, the insulating substrate 10 is bonded to the upper surface of the base substrate 11, and the conductive pattern 9a on the upper arm side and the conductive pattern 9b on the lower arm side are bonded to the upper surface of the insulating substrate 10 in a spaced-apart manner.

[0083] Then, on the upper surface of conductive pattern 9a, high-frequency switching element 13, non-discharge RCD buffer circuit element 6a, and non-discharge RCD buffer circuit element 15 are arranged in parallel (connected in parallel in the circuit), and all three are bonded by conductive bonding material 8. Similarly, on the upper surface of conductive pattern 9b, high-frequency switching element 14, non-discharge RCD buffer circuit element 7a, and non-discharge RCD buffer circuit element 16 are arranged in parallel (connected in parallel in the circuit), and all three are bonded by conductive bonding material 8.

[0084] On the upper surface of conductive pattern 9a, high-frequency switching element 13 is sandwiched between non-discharge type RCD buffer circuit element 6a and non-discharge type RCD buffer circuit element 15. Similarly, on the upper surface of conductive pattern 9b, high-frequency switching element 14 is sandwiched between non-discharge type RCD buffer circuit element 7a and non-discharge type RCD buffer circuit element 16.

[0085] Electrode N side 3 is connected to the buffer capacitor 7b on the lower arm side of the non-discharge type RCD buffer circuit element 7a, the high-frequency switching element 14, the non-discharge type RCD buffer circuit element 15, the non-discharge type RCD buffer circuit element 16, and the buffer resistor 6d on the upper arm side of the non-discharge type RCD buffer circuit element 6a through conductive bonding material 8.

[0086] Electrode U-side 2 is bonded to the conductive pattern 9b on the lower arm side and connected to the high-frequency switching element 13, the non-discharge RCD buffer circuit element 6a, and the non-discharge RCD buffer circuit element 15 via conductive bonding material 8. Electrode P-side 1a is bonded to the conductive pattern 9a on the upper arm side. Electrode P-side 1b is bonded to the conductive pattern 9a on the upper arm side, the buffer resistor 7d on the lower arm side of the non-discharge RCD buffer circuit element 7a, and the non-discharge RCD buffer circuit element 16. The entire semiconductor device is then sealed with resin sealing material 12.

[0087] In addition, Figure 8 Alternatively, an integrated switching element 4a can be provided instead of the high-frequency switching element 13, and an integrated switching element 5a can be provided instead of the high-frequency switching element 14.

[0088] In addition, Figure 8 In the middle, the non-discharge type RCD buffer circuit element 6a and the non-discharge type RCD buffer circuit element 7a can also be used with... Figure 5 The same configuration is used. That is, the non-discharge type RCD buffer circuit element 6a can be configured further away from the terminal portion of electrode U side 2 than the high-frequency switching element 13, and the non-discharge type RCD buffer circuit element 7a can be configured further away from the terminal portion of electrode N side 3 than the high-frequency switching element 14.

[0089] In addition, Figure 8 In addition to the non-discharge RCD buffer circuit element 15 and the non-discharge RCD buffer circuit element 16, a non-discharge RCD buffer circuit element can be further provided on the upper surface of the conductive pattern 9a or the upper surface of the conductive pattern 9b.

[0090] As described above, by further including a non-discharge type RCD buffer circuit element that forms a heat dissipation path, the heat dissipation of heat generated by the switching element accompanying the switching can be improved, thereby reducing the electrode temperature.

[0091] <Implementation Method 5>

[0092] The semiconductor device according to this embodiment will be described. Furthermore, in the following description, structural elements that are the same as those described in the above embodiments will be illustrated with the same reference numerals, and their detailed descriptions will be appropriately omitted.

[0093] <On the structure of semiconductor devices>

[0094] Figure 9 This is a circuit diagram illustrating a structural example of the semiconductor device involved in this embodiment. For example... Figure 9 As shown in the example, Figure 1In the circuit structure 100 shown, electrode P side 1b is connected to electrode + side 19, capacitor 17c is disposed between electrode P side 1b and electrode N side 3, and diode 17b is disposed on electrode + side 19. Diode 17b and capacitor 17c constitute secondary circuit element 17a of the boost circuit.

[0095] Figure 10 This is a circuit diagram illustrating other structural examples of the semiconductor device involved in this embodiment. For example... Figure 10 As shown in the example, Figure 1 In the circuit structure 100 shown, electrode P side 1a is connected to electrode + side 19, capacitor 18c is disposed between electrode P side 1a and electrode N side 3, and inductor 18b is disposed on electrode + side 19. Inductor 18b and capacitor 18c constitute secondary circuit element 18a of the step-down circuit.

[0096] Figure 11 This is a cross-sectional view schematically illustrating a structural example of the semiconductor device according to this embodiment. Figure 11 For convenience, the diagram of electrode P side 1a is omitted.

[0097] like Figure 11 As shown in the example, the insulating substrate 10 is bonded to the upper surface of the base substrate 11, and the conductive pattern 9a on the upper arm side and the conductive pattern 9b on the lower arm side are bonded to the upper surface of the insulating substrate 10 in a spaced-apart manner.

[0098] Then, on the upper surface of conductive pattern 9a, high-frequency switching element 13 and non-discharge type RCD buffer circuit element 6a are configured in parallel (connected in parallel on the circuit), both of which are bonded by conductive bonding material 8. Similarly, on the upper surface of conductive pattern 9b, high-frequency switching element 14 and non-discharge type RCD buffer circuit element 7a are configured in parallel (connected in parallel on the circuit), both of which are bonded by conductive bonding material 8.

[0099] Electrode N-side 3 is connected via conductive bonding material 8 to the buffer capacitor 7b on the lower arm side of the non-discharge type RCD buffer circuit element 7a, the high-frequency switching element 14, and the buffer resistor 6d on the upper arm side of the non-discharge type RCD buffer circuit element 6a. Furthermore, electrode N-side 3 is connected to electrode + side 19 and electrode P side 1b via boost circuit secondary side circuit element 17a and conductive bonding material 8. Alternatively, buck circuit secondary side circuit element 18a can be sandwiched instead of boost circuit secondary side circuit element 17a.

[0100] Electrode U-side 2 is bonded to the conductive pattern 9b on the lower arm side and connected to the high-frequency switching element 13 and the non-discharge type RCD buffer circuit element 6a via conductive bonding material 8. Electrode P-side 1b is bonded to the conductive pattern 9a on the upper arm side and the buffer resistor 7d on the lower arm side of the non-discharge type RCD buffer circuit element 7a. The entire semiconductor device is then sealed with resin sealing material 12.

[0101] In addition, Figure 11 Alternatively, an integrated switching element 4a can be provided instead of the high-frequency switching element 13, and an integrated switching element 5a can be provided instead of the high-frequency switching element 14.

[0102] In addition, Figure 11 In the middle, the non-discharge type RCD buffer circuit element 6a and the non-discharge type RCD buffer circuit element 7a can also be used with... Figure 2 The same configuration is used. That is, the non-discharge type RCD buffer circuit element 6a can be configured further away from the terminal portion of electrode U side 2 than the high-frequency switching element 13, and the non-discharge type RCD buffer circuit element 7a can be configured further away from the terminal portion of electrode N side 3 than the high-frequency switching element 14.

[0103] Figure 12 This is a cross-sectional view schematically illustrating an example of the internal structure of the secondary circuit element 17a of the boost circuit. Figure 13 This is a cross-sectional view schematically illustrating an example of the internal structure of the secondary circuit element 18a of the step-down circuit.

[0104] like Figure 12 As shown in the example, the secondary side circuit element 17a of the boost circuit has a diode 17b on the + side and a capacitor 17c connected in series with the diode 17b on the - side (N side). Furthermore, a wiring branching from between the diode 17b and the capacitor 17c of the secondary side circuit element 17a of the boost circuit is connected to the P side. For example... Figure 12 As shown in the example, the secondary side circuit element 17a of the boost circuit has a single connection wiring on the - side (electrode N side 3), and connection wiring on the + side 19 and the P side 1b respectively (i.e., a total of multiple wirings).

[0105] In addition, such as Figure 13 As shown in the example, the secondary circuit element 18a of the buck converter has an inductor 18b on the + side and a capacitor 18c connected in series with the inductor 18b on the - side (N side). Furthermore, wiring branching from the inductor 18b and capacitor 18c of the secondary circuit element 18a of the buck converter is connected to the P side. Figure 13As shown in the example, the secondary circuit element 18a of the step-down circuit has a single connection wire on the - side (electrode N side 3), and connection wires on the + side 19 and the P side 1a respectively (i.e., a total of multiple wires).

[0106] As described above, the electrode temperature can be reduced by increasing the heat dissipation path for the heat generated by the switching element. Furthermore, by connecting the external power supply circuit (boost circuit secondary side circuit element 17a, buck circuit secondary side circuit element 18a) to electrode + side 19 and electrode N side 3, the voltage between electrode P side and electrode N side can be boosted or bucked.

[0107] <Regarding the effects produced by the above-described multiple implementation methods>

[0108] Next, examples of the effects produced by the above-described embodiments will be shown. Furthermore, although the effects are described in the following description based on the specific structures exemplified in the above embodiments, other specific structures illustrated in this specification may be used within the scope where the same effect can be produced. That is, for convenience, sometimes only one of the corresponding specific structures is described representatively below, but the representatively described specific structure may be replaced with other corresponding specific structures.

[0109] Furthermore, this substitution can be implemented in multiple embodiments. That is, the structures exemplified in different embodiments can be combined to produce the same effect.

[0110] According to the above embodiment, the semiconductor device includes: a first conductive pattern and a second conductive pattern, which are disposed on the upper surface of an insulating substrate 10 spaced apart from each other; a first switching element; a second switching element; a first buffer circuit element; a second buffer circuit element; an electrode P side 1a (or electrode P side 1b); and an electrode N side 3. Here, the first conductive pattern corresponds, for example, to conductive pattern 9a, etc. Furthermore, the second conductive pattern corresponds, for example, to conductive pattern 9b, etc. Furthermore, the first switching element corresponds, for example, to an integrated switching element 4a, a high-frequency switching element 13, etc. Furthermore, the second switching element corresponds, for example, to an integrated switching element 5a, a high-frequency switching element 14, etc. Furthermore, the first buffer circuit element corresponds, for example, to a non-discharge type RCD buffer circuit element 6a, etc. Furthermore, the second buffer circuit element corresponds, for example, to a non-discharge type RCD buffer circuit element 7a, etc. The integrated switching element 4a is disposed on the upper surface of the conductive pattern 9a by a conductive bonding material 8. The integrated switching element 5a is disposed on the upper surface of the conductive pattern 9b by a conductive bonding material 8. Non-discharge RCD buffer circuit element 6a is connected in parallel with integrated switch element 4a. Non-discharge RCD buffer circuit element 7a is connected in parallel with integrated switch element 5a. Electrode P side 1a is connected to integrated switch element 4a. Electrode N side 3 is connected to integrated switch element 5a. Integrated switch element 4a and integrated switch element 5a are connected in series. Non-discharge RCD buffer circuit element 6a is connected to electrode N side 3. Non-discharge RCD buffer circuit element 7a is connected to electrode P side 1a through electrode P side 1b.

[0111] According to this structure, multiple heat dissipation paths are provided on the output side via the non-discharge type RCD snubber circuit element 6a and the non-discharge type RCD snubber circuit element 7a, thereby forming multiple paths for dissipating heat generated by the switching element during switching. Therefore, heat dissipation is improved, and electrode temperature can be reduced. Furthermore, the magnetic energy generated by electromagnetic induction accompanying the switching and stored in the electrodes can be released through the non-discharge type RCD snubber circuit, thus suppressing surge voltage.

[0112] Furthermore, the same effect can be achieved when other structures illustrated in this application are appropriately added to the above structure, that is, when other structures not mentioned in this application are appropriately added to the above structure.

[0113] Furthermore, according to the above embodiment, the non-discharge type RCD snubber circuit element 6a includes a first snubber capacitor, a first snubber diode, and a first snubber resistor. Here, the first snubber capacitor corresponds, for example, to snubber capacitor 6b. The first snubber diode corresponds, for example, to snubber diode 6c. The first snubber resistor corresponds, for example, to snubber resistor 6d. The snubber diode 6c is connected in series with the snubber capacitor 6b. The snubber resistor 6d branches off from between the snubber capacitor 6b and the snubber diode 6c and is disposed in the wiring connected to the electrode N side 3. With this structure, the snubber capacitor charges and discharges each time a switching operation is performed, but in the non-discharge type RCD snubber circuit, current flows through the snubber resistor only during discharge, thus reducing the loss of the snubber resistor and enabling high-frequency switching.

[0114] Furthermore, according to the above embodiment, the buffer capacitor 6b and the buffer diode 6c are arranged in the order of buffer capacitor 6b and buffer diode 6c, starting from the side closest to electrode P 1a in the circuit. With this structure, the magnetic energy generated by electromagnetic induction accompanying the switch and stored in the electrode can be released through a non-discharge type RCD buffer circuit, thus suppressing surge voltage.

[0115] Furthermore, according to the above embodiment, the non-discharge type RCD snubber circuit element 7a includes a second snubber capacitor, a second snubber diode, and a second snubber resistor. Here, the second snubber capacitor corresponds, for example, to snubber capacitor 7b. The second snubber diode corresponds, for example, to snubber diode 7c. The second snubber resistor corresponds, for example, to snubber resistor 7d. The snubber diode 7c is connected in series with the snubber capacitor 7b. The snubber resistor 7d is provided in a wiring (electrode P side 1b) branching off from the snubber capacitor 7b and the snubber diode 7c and connected to the electrode P side 1a. With this structure, the snubber capacitor charges and discharges each time a switching operation is performed, but in the non-discharge type RCD snubber circuit, current only flows through the snubber resistor during discharge. Therefore, the loss of the snubber resistor can be reduced, and high-frequency switching can be handled.

[0116] Furthermore, according to the above embodiment, the buffer capacitor 7b and the buffer diode 7c are arranged in the order of buffer capacitor 7b and buffer diode 7c, starting from the side closest to electrode N 3 in the circuit. With this structure, the magnetic energy generated by electromagnetic induction accompanying the switch and stored in the electrode can be released through a non-discharge type RCD buffer circuit, thus suppressing surge voltage.

[0117] Furthermore, according to the above embodiment, the semiconductor device includes an electrode U-side 2 connected between the integrated switching element 4a and the integrated switching element 5a. The non-discharge RCD buffer circuit element 6a is positioned closer to the terminal portion of the electrode U-side 2 than the integrated switching element 4a. Furthermore, the non-discharge RCD buffer circuit element 7a is positioned closer to the terminal portion of the electrode N-side 3 than the integrated switching element 5a. With this structure, the non-discharge RCD buffer circuit element 6a and the non-discharge RCD buffer circuit element 7a are positioned near the terminal portions of the electrodes, thereby improving heat dissipation.

[0118] Furthermore, according to the above embodiment, the integrated switching element 4a includes an IGBT 42 and a freewheeling diode 44 connected in reverse parallel with the IGBT 42. Additionally, the integrated switching element 5a includes an IGBT 52 and a freewheeling diode 54 connected in reverse parallel with the IGBT 52. With this structure, the non-discharge type RCD snubber circuit element 6a and the non-discharge type RCD snubber circuit element 7a have multiple heat dissipation paths on the output side, thereby forming multiple paths for dissipating the heat generated by the switching elements during switching. Therefore, heat dissipation is improved, and the electrode temperature can be reduced.

[0119] Furthermore, according to the above embodiment, the high-frequency switching element 13 includes a SiC-MOSFET 13a and a body diode 13b formed between the source and drain due to the structure of the SiC-MOSFET 13a. Furthermore, the high-frequency switching element 14 includes a SiC-MOSFET 14a and a body diode 14b formed between the source and drain due to the structure of the SiC-MOSFET 14a. With this structure, high-frequency switching can be achieved using the high-frequency switching elements 13 and 14.

[0120] Furthermore, according to the above embodiment, the semiconductor device includes a third buffer circuit element connected in parallel with the high-frequency switching element 13, and a fourth buffer circuit element connected in parallel with the high-frequency switching element 14. Here, the third buffer circuit element corresponds, for example, to a non-discharge type RCD buffer circuit element 15, etc. Furthermore, the fourth buffer circuit element corresponds, for example, to a non-discharge type RCD buffer circuit element 16, etc. The non-discharge type RCD buffer circuit element 6a and the non-discharge type RCD buffer circuit element 15 are arranged on the upper surface of the conductive pattern 9a, separated by the high-frequency switching element 13. The non-discharge type RCD buffer circuit element 7a and the non-discharge type RCD buffer circuit element 16 are arranged on the upper surface of the conductive pattern 9b, separated by the high-frequency switching element 14. According to this structure, by further including a non-discharge type RCD buffer circuit element forming a heat dissipation path, the heat dissipation of heat generated by the switching element during switching can be improved, thereby reducing the electrode temperature.

[0121] Furthermore, according to the above embodiment, the semiconductor device includes: an electrode + side 19 connected to electrode P side 1b; a capacitor 17c connected to electrode P side 1b and electrode N side 3; and a diode 17b disposed on electrode + side 19. With this structure, by connecting the secondary circuit element 17a of the boost circuit, which serves as an external power supply circuit, to electrode + side 19 and electrode N side 3, the voltage between electrode P side 1b and electrode N side 3 can be boosted.

[0122] Furthermore, according to the above embodiment, the semiconductor device includes: an electrode + side 19 connected to electrode P side 1a; a capacitor 18c connected to electrode P side 1a and electrode N side 3; and an inductor 18b disposed on electrode + side 19. With this structure, by connecting the secondary circuit element 18a of the step-down circuit, which serves as an external power supply circuit, to electrode + side 19 and electrode N side 3, the voltage between electrode P side 1a and electrode N side 3 can be stepped down.

[0123] <Variations on the above-described embodiments>

[0124] In the above-described embodiments, the material, size, shape, relative configuration relationship or implementation conditions of each structural element are sometimes described, but these are only examples in all respects and are not limiting.

[0125] Therefore, numerous variations and equivalents not illustrated are contemplated within the scope of the technology disclosed in this application. These include, for example, variations, additions, or omissions of at least one structural element, as well as extraction of at least one structural element from at least one embodiment and combination with structural elements from other embodiments.

[0126] Furthermore, in at least one of the above embodiments, when a material name is recorded without being specifically specified, it is assumed that the material contains other additives, such as alloys, as long as there is no contradiction.

[0127] Furthermore, as long as there is no contradiction, if the above embodiments describe the inclusion of "one" structural element, it may also include "more than one" of the structural elements.

[0128] Furthermore, the structural elements in the above embodiments are conceptual units, and within the scope of the technology disclosed in this application, they include cases where a structural element is composed of multiple structures, cases where a structural element corresponds to a part of a certain structure, and cases where multiple structural elements are included in a single structure.

[0129] Furthermore, the structural elements in the above embodiments, as long as they perform the same function, also include structures with other structures or shapes.

[0130] Furthermore, for all purposes related to this technology, reference is made to the descriptions in this application specification, and no description shall be considered prior art.

[0131] Label Explanation

[0132] 1a Electrode P side, 1b Electrode P side, 2 Electrode U side, 3 Electrode N side, 4a Integrated switching element, 5a Integrated switching element, 6a Non-discharge RCD snubber circuit element, 6b Snubber capacitor, 6c Snubber diode, 6d Snubber resistor, 7a Non-discharge RCD snubber circuit element, 7b Snubber capacitor, 7c Snubber diode, 7d Snubber resistor, 8 Conductive bonding material, 9a Conductive pattern, 9b Conductive pattern, 10 Insulating substrate, 11 Base substrate, 12 Resin sealing material, 13 High-frequency switching element, 13a SiC-MOSFET, 13b Body diode, 14 High-frequency switching element, 14a SiC-MOSFET, 14b Body diode, 15 Non-discharge RCD snubber circuit element, 16 Non-discharge RCD snubber circuit element, 17a Boost circuit secondary side circuit element, 17b Diode, 17c Capacitor, 18a The secondary circuit components of the step-down circuit are: 18b inductor, 18c capacitor, 19 electrode + side, 42 IGBT, 44 freewheeling diode, 52 IGBT, 54 freewheeling diode, and 100 circuit structure.

Claims

1. A semiconductor device, characterized in that, include: A first conductive pattern and a second conductive pattern are disposed on the upper surface of an insulating substrate, spaced apart from each other. A first switching element is disposed on the upper surface of the first conductive pattern by means of a bonding material; A second switching element is disposed on the upper surface of the second conductive pattern by means of a bonding material; A first buffer circuit element, which is connected in parallel with the first switching element; The second buffer circuit element is connected in parallel with the second switching element; The electrode P side is connected to the first switching element; as well as On the N-side of electrode, which is connected to the second switching element, The first switching element and the second switching element are connected in series. The first buffer circuit element is connected to the N side of the electrode. The second buffer circuit element is connected to the electrode P side.

2. The semiconductor device as claimed in claim 1, characterized in that, The first buffer circuit element includes: First buffer capacitor; A first buffer diode, wherein the first buffer diode is connected in series with the first buffer capacitor; and A first buffer resistor is disposed in a wiring branching from the first buffer capacitor and the first buffer diode and connected to the electrode N side.

3. The semiconductor device as claimed in claim 2, characterized in that, The first buffer capacitor and the first buffer diode are configured in the order of first buffer capacitor and first buffer diode, starting from the side closest to electrode P in the circuit.

4. The semiconductor device according to any one of claims 1 to 3, characterized in that, The second buffer circuit element includes: Second buffer capacitor; A second buffer diode, which is connected in series with the second buffer capacitor; and The second buffer resistor is disposed in the wiring that branches off from the second buffer capacitor and the second buffer diode and is connected to the electrode P side.

5. The semiconductor device as claimed in claim 4, characterized in that, The second buffer capacitor and the second buffer diode are configured in the order of the second buffer capacitor and the second buffer diode, starting from the side of the circuit closest to the electrode N.

6. The semiconductor device according to any one of claims 1 to 5, characterized in that, It also includes an electrode U-side, which is connected between the first switching element and the second switching element. The first buffer circuit element is positioned closer to the terminal portion on the electrode U side than the first switching element. The second buffer circuit element is configured closer to the terminal portion on the N side of the electrode than the second switching element.

7. The semiconductor device according to any one of claims 1 to 6, characterized in that, The first switching element includes a first IGBT and a first freewheeling diode connected in reverse parallel with the first IGBT. The second switching element includes a second IGBT and a second freewheeling diode connected in reverse parallel with the second IGBT.

8. The semiconductor device according to any one of claims 1 to 6, characterized in that, The first switching element includes a first MOSFET and a first body diode that serves as the body diode of the first MOSFET. The second switching element includes a second MOSFET and a second body diode that serves as the body diode of the second MOSFET.

9. The semiconductor device according to any one of claims 1 to 8, characterized in that, Also includes: A third buffer circuit element is connected in parallel with the first switching element; as well as The fourth buffer circuit element is connected in parallel with the second switching element. The first buffer circuit element and the third buffer circuit element are configured on the upper surface of the first conductive pattern, separated by the first switching element. The second and fourth buffer circuit elements are configured on the upper surface of the second conductive pattern, separated by the second switching element.

10. The semiconductor device according to any one of claims 1 to 9, characterized in that, Also includes: Electrode + side, which is connected to the electrode P side; A capacitor is provided by connecting the electrode P side and the electrode N side; as well as A diode, which is disposed on the positive side of the electrode.

11. The semiconductor device according to any one of claims 1 to 9, characterized in that, Also includes: Electrode + side, which is connected to the electrode P side; A capacitor is provided by connecting the electrode P side and the electrode N side; as well as An inductor disposed on the electrode + side.

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