Light emitting device and image display device

Abstract

A light-emitting device according to an embodiment of the present disclosure includes a first conductive layer, a second conductive layer, a light-emitting layer provided between the first conductive layer and the second conductive layer, and an optical confinement structure formed on at least one of the first conductive layer and the second conductive layer.

Description

Technical Field

[0001] This disclosure relates to light-emitting devices and image display devices including light-emitting devices. Background Technology

[0002] For example, Patent Document 1 discloses a light-emitting device in which one or more light-concentrating structures are disposed on the light output surface of a second compound semiconductor layer, and a current-limiting structure is disposed on a first or second compound semiconductor layer, thereby improving light extraction efficiency.

[0003] Reference List

[0004] Patent documents

[0005] Patent Document 1: International Publication No. WO 2023 / 032300 Summary of the Invention

[0006] Incidentally, in micro-displays, there is a desire to improve external quantum efficiency.

[0007] The aim is to provide a light-emitting device and an image display device that can improve external quantum efficiency.

[0008] A light-emitting device according to an embodiment of the present disclosure includes: a first conductivity type layer; a second conductivity type layer; a light-emitting layer disposed between the first conductivity type layer and the second conductivity type layer; and an optical confinement structure formed in the first conductivity type layer, the second conductivity type layer, or both.

[0009] The image display device according to the embodiments of the present disclosure includes the light-emitting device according to the embodiments of the present disclosure as the light-emitting device.

[0010] In the light-emitting device and the image display device according to embodiments of the present disclosure, the first conductivity type layer, the light-emitting layer, and the second conductivity type layer are stacked in this order, and in this configuration, an optical confinement structure is provided in the first conductivity type layer, the second conductivity type layer, or both. This reduces the diffusion of light in the in-plane direction orthogonal to the stacking direction of the aforementioned layers without obstructing the light path of light output from the light-emitting layer. Attached Figure Description

[0011] Figure 1 This is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device according to a first embodiment of the present disclosure.

[0012] Figure 2 It is shown Figure 1 A schematic diagram of an example of a planar configuration of the light-emitting device shown.

[0013] Figure 3 It shows the corresponding Figure 2 A schematic diagram of an example of the cross-sectional configuration of the light-emitting device of line II-II' shown.

[0014] Figure 4 yes Figure 1 An exploded perspective view of the light-emitting device shown.

[0015] Figure 5A It is used to explain the manufacturing process. Figure 1 A schematic cross-sectional view of the method of the light-emitting device shown in the figure.

[0016] Figure 5B It shows the continuation Figure 5A A schematic cross-sectional view of the subsequent steps.

[0017] Figure 5C It shows the continuation Figure 5B A schematic cross-sectional view of the subsequent steps.

[0018] Figure 5D It shows the continuation Figure 5C A schematic cross-sectional view of the subsequent steps.

[0019] Figure 5E It shows the continuation Figure 5D A schematic cross-sectional view of the subsequent steps.

[0020] Figure 5F It shows the continuation Figure 5E A schematic cross-sectional view of the subsequent steps.

[0021] Figure 5G It shows the continuation Figure 5F A schematic cross-sectional view of the subsequent steps.

[0022] Figure 6 This is a schematic diagram showing an example of the cross-sectional configuration of a light-emitting device according to a variation of the present disclosure, 1.

[0023] Figure 7 It is shown Figure 6 A schematic diagram of an example of a planar configuration of the light-emitting device shown.

[0024] Figure 8 It is shown that... Figure 7 A schematic diagram of an example of the cross-sectional configuration of the light-emitting device corresponding to line IV-IV' shown.

[0025] Figure 9 This is a schematic cross-sectional view showing an example of the configuration of the light-emitting device according to Modification 2 of this disclosure.

[0026] Figure 10 It is shown Figure 9A schematic diagram of an example of a planar configuration of the light-emitting device shown.

[0027] Figure 11 This is a schematic cross-sectional view showing an example of the configuration of the light-emitting device according to Modification 3 of this disclosure.

[0028] Figure 12 This is a schematic cross-sectional view showing an example of the configuration of the light-emitting device according to Modification 4 of this disclosure.

[0029] Figure 13 It is shown Figure 12 A schematic diagram of an example of a planar configuration of the light-emitting device shown.

[0030] Figure 14 This is a schematic cross-sectional view showing an example of the configuration of the light-emitting device according to Modification 5 of this disclosure.

[0031] Figure 15 This is a schematic cross-sectional view showing an example of the configuration of the light-emitting device according to Modification 6 of this disclosure.

[0032] Figure 16 This is a schematic cross-sectional view showing an example of the configuration of the light-emitting device according to Modification 7 of this disclosure.

[0033] Figure 17 This is a schematic cross-sectional view showing an example of the configuration of the light-emitting device according to Modification 8 of this disclosure.

[0034] Figure 18 This is a schematic cross-sectional view showing another example of the configuration of the light-emitting device according to Variation 8 of this disclosure.

[0035] Figure 19 This is a schematic cross-sectional view showing another example of the configuration of the light-emitting device according to Variation 8 of this disclosure.

[0036] Figure 20 This is a schematic cross-sectional view showing another example of the configuration of the light-emitting device according to Variation 8 of this disclosure.

[0037] Figure 21 This is a schematic cross-sectional view showing another example of the configuration of the light-emitting device according to Variation 8 of this disclosure.

[0038] Figure 22 This is a schematic cross-sectional view showing another example of the configuration of the light-emitting device according to Variation 8 of this disclosure.

[0039] Figure 23 This is a schematic cross-sectional view showing another example of the configuration of the light-emitting device according to Variation 8 of this disclosure.

[0040] Figure 24This is a schematic cross-sectional view showing an example of the configuration of the light-emitting device according to Modification 9 of this disclosure.

[0041] Figure 25 It is shown Figure 24 A schematic plan view showing an example of the layout of the various light-emitting regions of the light-emitting part.

[0042] Figure 26 This is a schematic cross-sectional view showing another example of the configuration of the light-emitting device according to Modification 9 of this disclosure.

[0043] Figure 27A It shows Figure 26 A schematic plan view of an example of the layout of the corresponding light-emitting areas of the light-emitting part shown.

[0044] Figure 27B It is shown Figure 26 A schematic plan view of another example of the layout of the corresponding light-emitting areas of the light-emitting part shown.

[0045] Figure 28 This is a schematic cross-sectional view showing another example of the configuration of the light-emitting device according to Modification 9 of this disclosure.

[0046] Figure 29 This is a schematic cross-sectional view showing another example of the configuration of the light-emitting device according to Modification 9 of this disclosure.

[0047] Figure 30 This is a schematic cross-sectional view showing an example of the configuration of the light-emitting device according to a variation 10 of this disclosure.

[0048] Figure 31A This is a front view showing an example of the appearance of a digital still camera as an application example of this disclosure.

[0049] Figure 31B It shows Figure 31A The rear view of an example of the appearance of a digital still camera shown.

[0050] Figure 32A This is a perspective view showing the appearance of an example of a head-mounted display that serves as an application example of this disclosure.

[0051] Figure 32B This is a perspective view showing the appearance of another example of a head-mounted display, which is an application example of this disclosure.

[0052] Figure 33 This is a perspective view showing an example of the appearance of a television device according to an application example of this disclosure.

[0053] Figure 34This is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device according to a second embodiment of the present disclosure.

[0054] Figure 35A It is shown Figure 34 A schematic diagram of an example of a planar configuration of the light-emitting device shown.

[0055] Figure 35B It is shown Figure 34 A schematic diagram of another example of a planar configuration of the light-emitting device shown.

[0056] Figure 36A It is shown Figure 34 A schematic cross-sectional view of another example of the shape of the microlens shown.

[0057] Figure 36B It is shown Figure 34 A schematic cross-sectional view of another example of the shape of the microlens shown.

[0058] Figure 36C It is shown Figure 34 A schematic cross-sectional view of another example of the shape of the microlens shown.

[0059] Figure 36D It is shown Figure 34 A schematic cross-sectional view of another example of the shape of the microlens shown.

[0060] Figure 36E It is shown Figure 34 A schematic cross-sectional view of another example of the shape of the microlens shown.

[0061] Figure 37A It is used to explain the manufacturing process. Figure 1 A schematic cross-sectional view of the method of the light-emitting device shown in the figure.

[0062] Figure 37B It shows the continuation Figure 37A A schematic cross-sectional view of the subsequent steps.

[0063] Figure 37C It shows the continuation Figure 37B A schematic cross-sectional view of the subsequent steps.

[0064] Figure 37D It shows the continuation Figure 37C A schematic cross-sectional view of the subsequent steps.

[0065] Figure 37E It shows the continuation Figure 37D A schematic cross-sectional view of the subsequent steps.

[0066] Figure 37F It shows the continuation Figure 37EA schematic cross-sectional view of the subsequent steps.

[0067] Figure 37G It shows the continuation Figure 37F A schematic cross-sectional view of the subsequent steps.

[0068] Figure 37H It shows the continuation Figure 37G A schematic cross-sectional view of the subsequent steps.

[0069] Figure 37I It shows the continuation Figure 37H A schematic cross-sectional view of the subsequent steps.

[0070] Figure 38 This is a schematic diagram showing an example of the cross-sectional configuration of a light-emitting device according to a variation 11 of this disclosure.

[0071] Figure 39 This is a schematic diagram showing an example of the cross-sectional configuration of a light-emitting device according to a variation 12 of this disclosure.

[0072] Figure 40 This is a schematic diagram showing an example of the cross-sectional configuration of a light-emitting device according to a variation 13 of this disclosure.

[0073] Figure 41 This is a schematic diagram showing an example of the cross-sectional configuration of a light-emitting device according to a variation 14 of this disclosure. Detailed Implementation

[0074] In the following, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The following description are specific examples of the present disclosure, but the present disclosure is not limited to the following embodiments. Furthermore, the present disclosure is not limited to the arrangement, dimensions, dimensional ratios, etc., of each component shown in the drawings. It should be noted that the description is given in the following order.

[0075] 1. A first embodiment (an example of a light-emitting device in which an optical confinement structure is provided in a second cladding layer on one side of the light extraction surface)

[0076] 2. Variations

[0077] 2-1. Variation Example 1 (Another example of the configuration of the light-emitting device)

[0078] 2-2. Variation Example 2 (Another example of the configuration of the light-emitting device)

[0079] 2-3. Variation Example 3 (Another example of the configuration of the light-emitting device)

[0080] 2-4. Variation Example 4 (Another example of the configuration of the light-emitting device)

[0081] 2-5. Variation 5 (Another example of the configuration of the light-emitting device)

[0082] 2-6. Variation 6 (Another example of the configuration of the light-emitting device)

[0083] 2-7. Variation 7 (Another example of the configuration of the light-emitting device)

[0084] 2-8. Variation 8 (Another example of the configuration of the light-emitting device)

[0085] 2-9. Variation 9 (Another example of the configuration of the light-emitting device)

[0086] 2-10. Variation 10 (Another example of the configuration of the light-emitting device)

[0087] 3. Second embodiment (an example of a light-emitting device including a light-concentrating lens layer containing inorganic material on the light extraction surface side, wherein the center of the groove provided between the pixels of the light-concentrating lens layer coincides with the center of the optical confinement structure)

[0088] 4. Variations

[0089] 4-1. Variation 11 (Another example of the configuration of the light-emitting device)

[0090] 4-2. Variation 12 (Another example of the configuration of the light-emitting device)

[0091] 4-3. Variation 13 (Another example of the configuration of the light-emitting device)

[0092] 4-4. Variation 14 (Another example of the configuration of the light-emitting device)

[0093] 4-5. Other variations

[0094] 5. Application Examples

[0095] <1. First Implementation Method>

[0096] Figure 1 An example of a cross-sectional configuration of a light-emitting device (light-emitting device 1) according to a first embodiment of the present disclosure is shown schematically. Figure 2 Schematic illustration Figure 1 An example of a planar configuration of the light-emitting device 1 shown. Figure 1 It shows the corresponding Figure 2 The cross-section of line I-I' is shown in the figure. Figure 3 It schematically shows the relationship with Figure 2 The example shown is a cross-sectional configuration of the light-emitting device 1 corresponding to line II-II'. The light-emitting device 1 is suitable for image display devices such as LED displays (e.g., the electronic viewfinder 1124 of a digital still camera 1120, see [reference]). Figure 32B ).

[0097] The light-emitting device 1 is a device in which a first cladding layer 11, a light-emitting layer 12, and a second cladding layer 13 are stacked sequentially. An optical confinement structure 130 is formed in the second cladding layer 13.

[0098] Here, the first cladding layer corresponds to a specific instance of the "first conductivity type layer" according to an embodiment of the present disclosure. The light-emitting layer 12 corresponds to a specific instance of the "light-emitting layer" according to an embodiment of the present disclosure. The second cladding layer 13 corresponds to a specific instance of the "second conductivity type layer" according to an embodiment of the present disclosure. The optical confinement structure 130 corresponds to a specific instance of the "optical confinement structure" according to an embodiment of the present disclosure.

[0099] <Configuration of the light-emitting device>

[0100] For example, the light-emitting device 1 is a device in which a first cladding layer 11, a light-emitting layer 12, and a second cladding layer 13 are stacked in this order. In the light-emitting device 1, a driving substrate 20 is disposed on one side of the first cladding layer 11, and one side of the second cladding layer 13 serves as a light extraction side S1. The first cladding layer 11 has a pair of surfaces (surface 11S1 and surface 11S2) that are opposite to each other, and surface 11S1 serves as the opposite surface of the light-emitting layer 12. The second cladding layer 13 has a pair of surfaces (surface 13S1 and surface 13S2) that are opposite to each other, surface 13S1 serves as the opposite surface of the light-emitting layer 12, and surface 13S2 serves as a light extraction surface. As described above, an optical confinement structure 130 is formed in the second cladding layer 13. A first electrode 14 and a second electrode 15 are electrically coupled to the first cladding layer 11 and the second cladding layer 13, respectively. The first electrode 14 is disposed on one side of surface 11S2 of the first cladding layer 11 and is electrically coupled to the first cladding layer 11. The first cladding layer 11 has an opening 16 extending through the first cladding layer 11 and the light-emitting layer 12 to reach the second cladding layer 13. The second electrode 15 is electrically coupled from the side of the first cladding layer 11 to the second cladding layer 13 through the opening 16. An interlayer insulating layer 21 is disposed between the first cladding layer 11 and the driving substrate 20. The interlayer insulating layer 21 has an embedded opening 16 and includes the first electrode 14, the second electrode 15, and a wiring layer 17 in the interlayer insulating layer 21. The interlayer insulating layer 21 also includes a plurality of contacts 22 embedded therein. The first cladding layer 11 and the second cladding layer 13 are electrically coupled to the driving substrate 20 via the contacts 22.

[0101] The first cladding layer 11 is used to provide active carriers to the light-emitting layer 12 through doping or the like. For example, the first cladding layer 11 includes a p-type GaN-based compound semiconductor material and provides holes to the light-emitting layer 12 as an active carrier. Alternatively, the first cladding layer 11 may include, for example, a phosphate (p)-based compound semiconductor material such as p-type AlGaInP or GaInP, or p-type AlGaAs.

[0102] The light-emitting layer 12 emits and amplifies self-emitted light, and holes and electrons injected from the first electrode 14 and the second electrode 15 radiatively recombine to generate stimulated emission. For example, as... Figure 4 As shown, the light-emitting layer 12 has a multi-quantum well (MQW) structure with multiple well layers 121 and multiple barrier layers 122 stacked alternately.

[0103] Well layer 121 is a double heterojunction layer sandwiched between barrier layer 122, and achieves high-efficiency luminescent recombination by confining charge carriers within the layer. Barrier layer 122 is a layer with quantum barrier properties within the heterojunction layer, which is formed to confine charge carriers within well layer 121. Barrier layer 122 is formed to be thicker than well layer 121. A light-emitting layer 12 (specifically, well layer 121) has a light-emitting region 12X within it. Well layer 121 comprises, for example, InGaN, and barrier layer 122 comprises, for example, GaN. Furthermore, well layer 121 comprises, for example, GaInP or GaAs, and barrier layer 122 comprises, for example, phosphate (P)-based compound semiconductor materials such as AlGaInP or GaInP, and AlGaAs.

[0104] Similar to the first cladding layer 11, the second cladding layer 13 is used to provide active charge carriers to the light-emitting layer 12 through doping or the like. For example, the second cladding layer 13 comprises an n-type GaN-based compound semiconductor material and provides electrons as active charge carriers to the light-emitting layer 12. Furthermore, for example, the second cladding layer 13 comprises a phosphate (P)-based compound semiconductor material such as n-type AlGaInP or GaInP and n-type AlGaAs.

[0105] The optical confinement structure 130 imparts a current confinement effect to the current injected from the second electrode 15 without obstructing the optical path of the light emitted from the light-emitting layer 12. For example, as... Figure 2 As shown, an optical confinement structure 130 is formed on the outer periphery of the light-emitting device 1 to surround the light-emitting region 12X. The optical confinement structure 130 has light absorption and insulation properties. The optical confinement structure 130 can be formed, for example, by ion implantation of impurities from the side of the surface (e.g., surface 13S2) of the second cladding layer 13. Alternatively, the optical confinement structure 130 can be formed by embedding a black matrix or the like into the second cladding layer 13.

[0106] For example, such as Figure 1 As shown, the optical confinement structure 130 may be formed from a portion of the second cladding layer 13 to the light-emitting layer 12. Alternatively, the optical confinement structure 130 may be formed to extend through the second cladding layer 13 and the light-emitting layer 12 to the first cladding layer 11.

[0107] The first electrode 14 is in contact with and electrically coupled to the first cladding layer 11. That is, the first electrode 14 is in ohmic contact with the first cladding layer 11. The first electrode 14 is, for example, a metal electrode, and is configured, for example, as a multilayer film (Ni / Au) of nickel (Ni) and gold (Au). In addition, for example, the first electrode 14 may comprise a transparent conductive material such as indium tin oxide (ITO).

[0108] The second electrode 15 contacts and is electrically coupled to the second cladding 13 through an opening 16 extending through the first cladding 11 and the light-emitting layer 12 to the second cladding 13. That is, the second electrode 15 is in ohmic contact with the second cladding 13. Like the first electrode 14, the second electrode 15 is configured as, for example, a multilayer film (Ni / Au) of nickel (Ni) and gold (Au). Alternatively, the first electrode 14 may comprise, for example, a transparent conductive material such as indium tin oxide (ITO).

[0109] <Manufacturing Method of Light-Emitting Device>

[0110] The light-emitting device 1 can be manufactured, for example, as follows. Figures 5A to 5G Exemplary manufacturing steps of the light-emitting device 1 are shown.

[0111] First, such as Figure 5A As shown, a second cladding layer 13, a light-emitting layer 12, and a first cladding layer 11 are sequentially stacked on a support substrate 30. For example, the first cladding layer 11, the light-emitting layer 12, and the second cladding layer 13 are formed by epitaxial crystal growth using methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

[0112] After that, as Figure 5B As shown, an opening 16 is formed extending through the first cladding layer 11 and the light-emitting layer 12 to the second cladding layer 13. Thereafter, as... Figure 5B As shown, an insulating layer (interlayer insulating layer 21) is formed on the first cladding 11 and on the side and bottom surfaces of the opening 16. Subsequently, the interlayer insulating layer 21 formed on the bottom surface of the opening 16 is etched back to expose the second cladding 13.

[0113] After that, as Figure 5C As shown, an opening is formed at a predetermined location in the interlayer insulating layer 21, and a conductive film is formed on the interlayer insulating layer 21 and on the side and bottom surfaces of the opening 16H. The conductive film is then processed by, for example, photolithography. Thus, a first electrode 14, a second electrode 15, a wiring layer 17, and a plug 18 that couples the second electrode 15 and the wiring layer 17 to each other are formed.

[0114] After that, as Figure 5D As shown, an interlayer insulating layer 21 is further formed to embed the opening 16 therein, and the drive substrate 20 is bonded thereto via contacts 22. Thereafter, as... Figure 5E As shown, the support substrate 30 is peeled off.

[0115] After that, as Figure 5F As shown, the resist film 201 is formed in a predetermined pattern on the surface 13S2 of the second cladding layer 13. Thereafter, as... Figure 5F As shown, for example, the impurity concentration of the second cladding 13 exposed from the resist film 201 is controlled by ion implantation, thereby forming the optical confinement structure 130. Subsequently, as... Figure 5G As shown, the resist film 201 is removed, and the surface of the second cladding layer 13 is planarized, for example, by chemical mechanical polishing (CMP). Thus, the process is complete. Figure 1 and Figure 3 The light-emitting device 1 shown is shown.

[0116] <Work and Results>

[0117] The light-emitting device 1 according to this embodiment has a configuration in which a first cladding layer 11, a light-emitting layer 12, and a second cladding layer 13 are stacked in this order, and in this configuration, an optical confinement structure 130 is provided in a second conductivity type layer that serves as a light extraction surface. This reduces the diffusion of light in the in-plane direction orthogonal to the stacking direction of the aforementioned layers 11, 12, and 13, without obstructing the light path of light output from the light-emitting layer 12. This will be described below.

[0118] In recent years, high-definition image display devices using miniature light-emitting diodes (hereinafter referred to as miniature LEDs) that use gallium nitride (GaN) as a light source have become popular.

[0119] The problem with micro-LEDs is that the external quantum efficiency decreases rapidly as the device size shrinks. One reason is that charge carriers are trapped in recombination centers created during device isolation via mesa processes, and many carriers are consumed as non-luminescent recombinations, resulting in a reduced contribution to luminescence. To address this, a method has been used in recent years in which electrodes are selectively positioned immediately below the active layer, and current is concentrated (current-limited) within the active layer to concentrate charge carriers in desired regions for luminescence, thereby improving the internal quantum efficiency. Another known method involves limiting the current by implanting ions into the conductive layer to form high-resistivity regions (current-limited regions).

[0120] Ion implantation is a typical technique in electronic devices, enabling the selective formation of current-confined regions with high precision through semiconductor processes. However, in micro-LEDs where current-confined regions are formed, despite no damage to the active layer, there remains a device size dependence on external quantum efficiency, and a shift in peak current density has been reported. Furthermore, large changes in light emission have been observed when the device size is approximately 1 μm.

[0121] This change in light emission is thought to be due to light absorption in the current-confined region. When ions accelerated during ion implantation are injected into the conductive layer, the ions collide with atoms in the crystal to form vacancies (crystal defects) or compounds with the ions. Crystal defects prevent the movement of charge carriers, which causes the region where the ions are implanted to become highly resistive; however, simultaneously, an intermediate energy level is formed within the band gap due to the crystal defects and the compounds with the ions. Therefore, light emitted from the active layer is absorbed. Considering the light absorption, it is reasonable to say that the reduction in the external quantum efficiency of a microLED with a current-confined region located in the conductive layer holding the active layer is reasonable.

[0122] Conversely, in this embodiment, as described above, in the configuration where the first cladding layer 11, the light-emitting layer 12, and the second cladding layer 13 are stacked in this order, the optical confinement structure 130 is disposed at a position on the second cladding layer 13, which serves as a light extraction surface, that does not obstruct the optical path of light emitted from the light-emitting layer 12. This allows for reduction of light diffusion in the in-plane direction orthogonal to the stacking direction of the aforementioned layers 11, 12, and 13, without obstructing the optical path of light emitted from the light-emitting layer 12.

[0123] As described above, the light-emitting device 1 according to this embodiment enables improved external quantum efficiency.

[0124] Next, the second embodiment, variations 1 to 14, and application examples of this disclosure will be described. It should be noted that components corresponding to the components of the light-emitting device 1 according to the first embodiment described above are indicated by the same reference numerals, and their descriptions are omitted.

[0125] <2. Variations>

[0126] <2-1. Variation Example 1>

[0127] Figure 6 An example of a cross-sectional configuration of a light-emitting device (light-emitting device 1A) according to a variation of the present disclosure is shown schematically. Figure 7 Schematic illustration Figure 6 An example of a planar configuration of the light-emitting device 1A shown. Figure 6 It shows the corresponding Figure 7 The cross section of line III-III' shown. Figure 8 The schematic diagram shows the corresponding Figure 7 An example of the cross-sectional configuration of the light-emitting device 1A along line IV-IV' shown. As in the first embodiment described above, the light-emitting device 1A is suitable for an image display device called an LED display (e.g., the electronic viewfinder 1124 of a digital still camera 1120, etc.).

[0128] The first embodiment described above illustrates an example in which the optical confinement structure 130 is continuously formed to surround the light-emitting region 12X, and an opening 16 through which the second cladding layer 13 and the second electrode 15 are electrically coupled to each other is formed inside the optical confinement structure 130; however, this disclosure is not limited thereto. In the light-emitting device 1A according to this variation, the optical confinement structure 130 surrounding the light-emitting region 12X has a segmented portion, and the opening 16 is formed at the location where the optical confinement structure 130 is segmented. Apart from this, the light-emitting device 1A has a configuration substantially the same as that of the light-emitting device 1 of the first embodiment described above.

[0129] Similarly, with this configuration, the light-emitting device 1A of this modified example can achieve an effect similar to that of the light-emitting device 1 of the first embodiment described above.

[0130] <2-2. Variation Example 2>

[0131] Figure 9 An example of the cross-sectional configuration of a light-emitting device (light-emitting device 1B) according to a variation 2 of this disclosure is shown schematically. Figure 10 Schematic illustration Figure 9 An example of a planar configuration of the light-emitting device 1B shown. Figure 9 It shows the corresponding Figure 10 The cross-section of line V-V' shown is illustrated. As in the first embodiment described above, the light-emitting device 1B is suitable for an image display device called an LED display (e.g., the electronic viewfinder 1124 of a digital still camera 1120, etc.).

[0132] The first embodiment described above illustrates an example in which only one light-emitting region 12X is provided in the plane of the light-emitting layer 12; however, this disclosure is not limited thereto. The light-emitting device 1B of this modified example includes, for example, a plurality of light-emitting regions 12X arranged in a two-dimensional array in the plane of the light-emitting layer 12. Apart from this, the light-emitting device 1B has a configuration substantially the same as that of the light-emitting device 1 of the first embodiment described above.

[0133] The light-emitting device 1B includes a plurality of light-emitting regions 12X arranged in a two-dimensional array, and each light-emitting region 12X constitutes a display pixel P. In the light-emitting device 1B, in a plan view, an optical confinement structure 130 is formed to individually surround each of the plurality of light-emitting regions 12X. In other words, for example, in the light-emitting device 1B in which the plurality of light-emitting regions 12X are arranged in a matrix, the optical confinement structure 130 is formed in a lattice pattern to individually surround each of the plurality of light-emitting regions 12X in a plan view. In the light-emitting device 1B, a first electrode 14 is provided for each light-emitting region 12X. Furthermore, in the light-emitting device 1B, for each of the light-emitting regions 12X individually surrounded by the optical confinement structure 130, an opening 16 is formed extending through the first cladding layer 11 and the light-emitting layer 12 to the second cladding layer 13. That is, for each display pixel P, the second cladding layer 13 and the second electrode 15 are electrically coupled to each other.

[0134] As described above, in the light-emitting device 1B of this modified example, a plurality of light-emitting regions 12X are arranged in the plane of the light-emitting layer 12 in a two-dimensional array, and the optical confinement structure 130 is formed to individually surround each of the plurality of light-emitting regions 12X. Furthermore, in the light-emitting device 1B, an opening 16 is formed for each of the light-emitting regions 12X individually surrounded by the optical confinement structure 130, and for each display pixel P, the second cladding layer 13 and the second electrode 15 are electrically coupled to each other. With this configuration, the light-emitting device 1B of this modified example can also achieve effects similar to those of the light-emitting device 1 of the first embodiment described above.

[0135] Furthermore, in the light-emitting device 1B according to this modification, a plurality of light-emitting regions 12X are arranged in the plane of the light-emitting layer 12. For example, in a two-dimensional array, stray light to adjacent elements can be suppressed, wherein each portion of the light-emitting region 12X, divided by the optical confinement structure 130, is considered as an element. This makes it possible to improve the contrast of an image display device including such a light-emitting device 1B.

[0136] <2-3, Variation Example 3>

[0137] Figure 11 An example of a cross-sectional configuration of a light-emitting device (light-emitting device 1C) according to a variation 3 of this disclosure is schematically shown. As with the first embodiment described above, the light-emitting device 1C is suitable for an image display device (e.g., an electronic viewfinder 1124 of a digital still camera 1120, etc.) referred to as an LED display.

[0138] The above-described variation 2 shows an example in which a plurality of light-emitting regions 12X arranged in a two-dimensional array are individually surrounded by an optical confinement structure 130 extending from the surface 13S2 of the second cladding 13 to a portion of the light-emitting layer 12; however, this disclosure is not limited thereto. In the light-emitting device 1C of this variation, the plurality of light-emitting regions 12X arranged in a two-dimensional array are individually surrounded by an optical confinement structure 130A, which extends from the surface 13S2 of the second cladding 13 to the surface 13S2 and has a bottom portion within the second cladding 13. Apart from this, the light-emitting device 1C has a configuration substantially the same as that of the light-emitting device 1 of the first embodiment described above.

[0139] As described above, in the light-emitting device 1C of this modified example, a plurality of light-emitting regions 12X arranged in a two-dimensional array are individually surrounded by an optical confinement structure 130A, which extends from the surface 13S2 of the second cladding 13 and has a bottom portion within the second cladding 13. Similarly, with this configuration, the light-emitting device 1C of this modified example can achieve effects similar to those of the light-emitting device 1 of the first embodiment and the light-emitting device 1B of modified example 2.

[0140] <2-4, Variation Example 4>

[0141] Figure 12 An example of a cross-sectional configuration of a light-emitting device (light-emitting device 1D) according to a variation 4 of this disclosure is schematically shown. Figure 13 Schematic illustration Figure 2 An example of a planar configuration of the light-emitting device 1D shown. Figure 12 It shows the corresponding Figure 13 The cross-section of line VI-VI' shown. As in the first embodiment described above, the light-emitting device 1D is suitable for an image display device called an LED display (e.g., the electronic viewfinder 1124 of a digital still camera 1120, etc.).

[0142] The above-described variation 2 shows that a plurality of light-emitting regions 12X arranged in a two-dimensional array are individually surrounded by an optical confinement structure 130. An opening 16 is formed for each of the light-emitting regions 12X individually surrounded by the optical confinement structure 130, and for each display pixel P, the second cladding layer 13 and the second electrode 15 are electrically coupled to each other; however, this disclosure is not limited thereto. The light-emitting device 1D of this variation includes a pixel array portion 100A and a peripheral portion 100B. In the pixel array portion 100A, a plurality of display pixels P, each including a light-emitting region 12X, are arranged in a two-dimensional array. The peripheral portion 100B is disposed on the outer periphery of the pixel array portion 100A. In the light-emitting device 1D, the optical confinement structure 130, which individually surrounds the plurality of light-emitting regions 12X arranged in the two-dimensional array, is divided at the intersection of adjacent display pixels P in the X-axis direction and the Y-axis direction, and, for example, an opening 16 extending through the first cladding layer 11 and the light-emitting layer 12 to reach the second cladding layer 13 is formed in the peripheral portion 100B. That is, in the light-emitting device 1D, the second electrode 15 is configured as a common electrode for multiple display pixels P, for example, on the peripheral portion 100B. Apart from this, the light-emitting device 1D has a configuration that is substantially the same as that of the light-emitting device 1 of the first embodiment described above.

[0143] Similarly, with this configuration, the light-emitting device 1D of this modified example can achieve effects similar to those of the light-emitting device 1 of the first embodiment and the light-emitting device 1B of the modified example 2.

[0144] It should be noted that the above-described Modification 2 illustrates an example in which an opening 16 is formed for each of the light-emitting regions 12X individually surrounded by the optical confinement structure 130. Furthermore, the above-described Modification 4 illustrates an example in which the optical confinement structure 130 is divided at the intersection of adjacent display pixels P in the X-axis and Y-axis directions, an opening 16 is formed in the peripheral portion 100B, and the second electrode 15 is configured as a common electrode for the plurality of display pixels P; however, this disclosure is not limited thereto. For example, Modifications 2 and 4 can be combined to form an opening 16 at each location where the optical confinement structure 130 is divided at the intersection of adjacent display pixels P in the X-axis and Y-axis directions, and to provide a second electrode 15 for each opening 16.

[0145] <2-5, Variation Example 5>

[0146] Figure 14 The illustration schematically shows an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1E) according to a variation 5 of this disclosure. As with the first embodiment described above, the light-emitting device 1E is suitable for an image display device (e.g., an electronic viewfinder 1124 of a digital still camera 1120, etc.) referred to as an LED display.

[0147] Similar to Modification 3 described above, the optical confinement structure 130 of Modification 4 described above can be an optical confinement structure 130A that extends from the surface 13S2 of the second cladding 13 to the surface 13S2 and has a bottom portion within the second cladding 13. Apart from this, the light-emitting device 1E has a configuration substantially the same as that of the light-emitting device 1 of the first embodiment described above.

[0148] Similarly, with this configuration, the light-emitting device 1E of this modified example can achieve effects similar to those of the light-emitting device 1 of the first embodiment and the light-emitting device 1B of the modified example 2.

[0149] It should be noted that when there is a gap between the optical confinement structure 130A and the light-emitting layer 12 (as in the optical confinement structure 130A of this modified example), the corresponding portions of the second cladding layer 13 of the display pixel P are coupled to each other through this gap. Therefore, the optical confinement structure 130A does not necessarily have to be divided at the intersection of the display pixels P that are adjacent to each other in the X-axis and Y-axis directions.

[0150] <2-6. Variation Example 6>

[0151] Figure 15 The illustration schematically shows an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1F) according to a variation 6 of the present disclosure. As with the first embodiment described above, the light-emitting device 1F is suitable for an image display device (e.g., an electronic viewfinder 1124 of a digital still camera 1120, etc.) referred to as an LED display.

[0152] The first embodiment described above illustrates an example in which the second cladding layer 13 and the second electrode 15 are electrically coupled to each other by extending through the first cladding layer 11 and the light-emitting layer 12 to reach the opening 16 of the second cladding layer 13; however, this disclosure is not limited thereto. In the light-emitting device 1E of this modified example, the second electrode 15A is disposed on the surface 13S2, which serves as the light extraction surface of the second cladding layer 13. Apart from this, the light-emitting device 1F has a configuration substantially the same as that of the light-emitting device 1 of the first embodiment described above.

[0153] The second electrode 15A contacts and is electrically coupled to the second cladding 13 from the surface 13S2, which serves as the light extraction surface. That is, the second electrode 15A is in ohmic contact with the second cladding 13. For example, the second electrode 15A comprises a transparent conductive material such as ITO.

[0154] like Figure 15As shown, the second electrode 15A is disposed on the surface 13S2, which serves as the light extraction surface of the second cladding layer 13, and extends on the pixel array portion 100A as a common layer for multiple display pixels P. Furthermore, for example, the second electrode 15A extends to the peripheral portion 100B and is electrically coupled to the electrode 15B disposed in the opening 16 through an opening 13H formed in the peripheral portion 100B and extending through the second cladding layer 13.

[0155] As described above, in the light-emitting device 1F of this modified example, the second electrode 15A is disposed on the surface 13S2, which serves as the light extraction surface of the second cladding layer 13. With this configuration, the light-emitting device 1F of this modified example can achieve effects similar to those of the light-emitting device 1 of the first embodiment and the light-emitting device 1B of the modified example 2.

[0156] <2-7, Variation Example 7>

[0157] Figure 16 An example of a cross-sectional configuration of a light-emitting device (light-emitting device 1G) according to a variation 7 of this disclosure is schematically shown. As with the first embodiment described above, the light-emitting device 1G is suitable for an image display device (e.g., an electronic viewfinder 1124 of a digital still camera 1120, etc.) referred to as an LED display.

[0158] In the light-emitting device 1G of this modified example, a light-collecting structure is formed on the surface 13S2, which serves as the light extraction surface of the second cladding layer 13. The light-collecting structure is, for example, a convex lens 13L. Apart from this, the light-emitting device 1G has a configuration that is substantially the same as that of the light-emitting device 1 of the first embodiment described above.

[0159] Lens 13L is disposed, for example, above the light-emitting device, increasing the proportion of light incident on the lens (not shown) that converges the light output from the light-emitting device within its receiving angle. Lens 13L may, for example, have an outer diameter substantially the same as or smaller than that of the display pixel. Lens 13L comprises the same material as the second cladding 13 and can be formed, for example, by etching the second cladding 13.

[0160] Furthermore, the light-gathering structure is not limited to a convex lens 13L. The light-gathering structure can be, for example, a structure that has the function of bending light, such as surface undulations, ramps, or nano-periodic structures.

[0161] As described above, in the light-emitting device 1G of this modified example, a light-collecting structure (e.g., lens 13L) is formed on surface 13S2, which serves as the light-extraction surface of the second cladding 13. This allows for an increase in the proportion of incident light within the receiving angle of the lens that collects light emitted from the light-emitting device. Therefore, in addition to the effects of the first embodiment and modified example 2 described above, light extraction efficiency can be improved.

[0162] <2-8, Variation Example 8>

[0163] Figure 17 An example of a cross-sectional configuration of a light-emitting device (light-emitting device 1H) according to a variation 8 of this disclosure is schematically shown. Figures 18 to 23 Another example of a cross-sectional configuration of one of the light-emitting devices (light-emitting devices 11 to 1N) according to Variation 8 of this disclosure is shown schematically. As with the first embodiment described above, light-emitting devices 1H to 1N are all suitable for image display devices (e.g., electronic viewfinder 1124 of digital still camera 1120, etc.) referred to as LED displays.

[0164] The first embodiment described above shows an example where the optical confinement structure 130 is provided only on one side of the second cladding 13 on the light extraction side S1; however, this disclosure is not limited thereto. The light-emitting device 1H of this modified example further includes the optical confinement structure 110 in the first cladding 11 of the light-emitting device 1 of the first embodiment described above. The light-emitting device 1I of this modified example includes the optical confinement structure 110 in the first cladding 11 of the light-emitting device 1B of the modified example described above. The light-emitting device 1J of this modified example includes the optical confinement structure 110 in the first cladding 11 of the light-emitting device 1C of the modified example described above. The light-emitting device 1K of this modified example includes the optical confinement structure 110 in the first cladding 11 of the light-emitting device 1D of the modified example described above. The light-emitting device 1L of this modified example includes the optical confinement structure 110 in the first cladding 11 of the light-emitting device 1E of the modified example described above. The light-emitting device 1M of this modified example includes the optical confinement structure 110 in the first cladding 11 of the light-emitting device 1F of the modified example described above. In this modified example, the light-emitting device 1N has an optical confinement structure 110 provided in the first cladding 11 of the light-emitting device 1G in the modified example 7. Apart from these points, the light-emitting devices 1H and 1I to 1N all have a configuration that is substantially the same as that of the corresponding one of the light-emitting devices 1 in the first embodiment and the modified examples 2 to 7.

[0165] The optical confinement structure 110 imparts a current confinement effect to the current injected from the first electrode 14. Like the optical confinement structure 130, the optical confinement structure 110 is formed around the light-emitting region 12X. Like the optical confinement structure 130, the optical confinement structure 110 has light absorption and insulation properties. The optical confinement structure 110 can be formed, for example, by ion implantation of impurities from one side of the surface of the first cladding layer 11 (e.g., surface 11S2). Furthermore, the optical confinement structure 110 can be formed by embedding a black matrix or the like into the first cladding layer 11.

[0166] In the light-emitting devices 1H to 1N of this modification, the width W2 of the optical confinement structure 130 is smaller than the width W1 of the optical confinement structure 110. One reason for this is to prevent obstruction of the light path emitted from the light-emitting layer 12. Specifically, preferably, in a configuration where multiple display pixels P are arranged in a two-dimensional array, the optical confinement structure 130 is selectively formed at the boundary portions of adjacent display pixels P. This allows for improved contrast without obstructing the light path emitted from the light-emitting layer 12.

[0167] As described above, in the light-emitting devices 1H to 1N of this modified example, the optical confinement structure 130 is provided in the second cladding layer 13 disposed on the light extraction side S1, and the optical confinement structure 110 is provided in the first cladding layer 11 disposed on the side opposite to the light extraction side S1. This improves the current injection efficiency into the light-emitting layer 12 from the first electrode 14 side. Therefore, compared with the light-emitting device 1 of the first embodiment described above, the external quantum efficiency can be further improved.

[0168] <2-9, Variation Example 9>

[0169] Figure 24 An example of the cross-sectional configuration of a light-emitting device (light-emitting device 1O) according to a variation 9 of this disclosure is shown schematically. Figure 25 Schematic illustration Figure 24 An example of the planar layout of the corresponding light-emitting areas of the light-emitting parts 10R, 10G and 10B of the light-emitting device 1O shown. Figure 26 , Figure 28 and Figure 29 Another example of the cross-sectional configuration of a corresponding one of the light-emitting devices (light-emitting devices 1P to 9C) according to Modification 9 of this disclosure is shown schematically. Figure 27A and Figure 27B All schematically shown Figure 26 An example of the planar layout of the corresponding light-emitting areas of the light-emitting portions 10R, 10G, and 10B of the light-emitting device 1P shown. As in the first embodiment described above, the light-emitting devices 10 and 9A to 9C are each suitable for an image display device called an LED display (e.g., the electronic viewfinder 1124 of a digital still camera 1120).

[0170] The light-emitting device 10 of this modified example includes, for example, light-emitting portions 10R, 10G, and 10B stacked sequentially from the driving substrate 20 side. The light-emitting portion 10R includes a light-emitting layer 12R in which a plurality of light-emitting regions 12X emitting red light are arranged in a two-dimensional array. The light-emitting portion 10G includes a light-emitting layer 12G in which a plurality of light-emitting regions 12X emitting green light are arranged in a two-dimensional array. The light-emitting portion 10B includes a light-emitting layer 12B in which a plurality of light-emitting regions 12X emitting blue light are arranged in a two-dimensional array. Similar to the light-emitting device 1 of the first embodiment described above, each of the light-emitting portions 10R, 10G, and 10B is a device in which a first cladding layer 11, a light-emitting layer 12 (12R, 12G, or 12B), and a second cladding layer 13 are stacked in this order.

[0171] In this modified example, each light-emitting region (light-emitting area) of the light-emitting portions 10R, 10G, and 10B is defined by the size of the first electrode 14 disposed in a corresponding one of the light-emitting portions 10R, 10G, and 10B. In each of the light-emitting portions 10R, 10G, and 10B, for each element divided by the optical confinement structure 130, the first electrode 14 is disposed on the side surface 11S2 of the first cladding layer 11. Figure 24 As shown, the regions Dr, Dg, and Db of the first electrode 14 disposed in each of the light-emitting portions 10R, 10G, and 10B satisfy, for example, a relationship of Dr > Dg > Db. In this case, the corresponding elements of the light-emitting portions 10R, 10G, and 10B of the light-emitting device 10 each have a corresponding one of the light-emitting regions 12Xr, 12Xg, and 12Xb, as shown. Figure 25 As shown. Similar to the modified example 5 described above, the second electrode 15 is disposed on the surface 13S2, which serves as the light extraction surface of the second cladding 13, and acts as a common electrode for the element. Apart from this, the light-emitting device 10 has a configuration that is basically similar to that of the light-emitting device 1 of the first embodiment described above.

[0172] In the light-emitting device 1P of this modified example, the positions of the first electrodes 14 of each light-emitting part 10R, 10G, and 10B are shifted in the in-plane direction. For example, as Figure 27A and Figure 27B As shown, by offsetting the position where the first electrode 14 is formed in the in-plane direction, the light-emitting region 12Xg of the light-emitting part 10G and the light-emitting region 12Xb of the light-emitting part 10B are formed at corresponding positions different from each other in the plan view. Apart from this, the light-emitting device 1P has a configuration that is substantially similar to the light-emitting device 1O, etc., of the modified example 9 described above.

[0173] In the light-emitting device 1Q of this modified example, the width of the optical confinement structure 130 varies for each of the light-emitting portions 10R, 10G, and 10B, and the widths Wr, Wg, and W2 of the optical confinement structure 130 for the corresponding light-emitting portions 10R, 10G, and 10B satisfy, for example, the relationship Wr > Wg > Wb. Figure 28 As shown. Apart from this, the light-emitting device 1Q has a configuration that is substantially similar to that of the light-emitting device 1O, etc., in the above-described variant 9.

[0174] In the light-emitting device 1R of this modified example, a light-concentrating structure (lens 13L) is formed on surface 13S2, which serves as the light-extracting surface of the second cladding 13 arranged on the uppermost layer 10B, such as... Figure 29 As shown. Apart from this, the light-emitting device 1R has a configuration that is basically similar to that of the light-emitting device 1O in the above-described modified example 9.

[0175] <2-10. Variation Example 10>

[0176] Figure 30 An example of a cross-sectional configuration of a light-emitting device (light-emitting device 1S) according to a variation 10 of this disclosure is schematically shown. As with the first embodiment described above, the light-emitting device 1S is suitable for an image display device (e.g., an electronic viewfinder 1124 of a digital still camera 1120, etc.) referred to as an LED display.

[0177] The above embodiments illustrate examples where pixels are separated by both optical confinement structure 130, optical confinement structure 110, and optical confinement structure 130, or by forming electrodes; however, this disclosure is not limited thereto. In the light-emitting device 1S of this modified example, a mesa 10M is formed for each element by a trench 19, which extends from the side of the surface 11S2 of the first cladding layer 11, through the first cladding layer 11 and the light-emitting layer 12, to the second cladding layer 13, thereby separating the pixels. Otherwise, the light-emitting device 1S has a configuration substantially the same as that of the light-emitting device 1 of the first embodiment described above.

[0178] As described above, in the light-emitting device 1A of this modified example, pixels are mechanically separated by providing a groove 19 extending from the side of the surface 11S2 of the first cladding layer 11 through the first cladding layer 11 and the light-emitting layer 12 to the second cladding layer 13. Similarly, with this configuration, the light-emitting device 1S of this modified example can achieve effects similar to those of the light-emitting device 1 of the first embodiment described above.

[0179] <3. Second Implementation Method>

[0180] Figure 34 A schematic illustration shows an example of a cross-sectional configuration of a light-emitting device (light-emitting device 2) according to a second embodiment of the present disclosure. Figure 35 schematically shows... Figure 34 An example of a planar configuration of the light-emitting device 2 shown in Figure 36. Figure 36 schematically illustrates the planar configuration of the light-emitting device 2. Figure 34 Another example of a planar configuration of the light-emitting device 2 shown in the diagram. Like the light-emitting device 1 of the first embodiment described above, the light-emitting device 2 is suitable for image display devices called LED displays (e.g., the electronic viewfinder 1124 of a digital still camera 1120, see [link]). Figure 32B ).

[0181] The light-emitting device 2 is a device in which a first cladding layer 11, a light-emitting layer 12, and a second cladding layer 13 are stacked in this order. An optical confinement structure 130 is formed in the second cladding layer 13. The light-emitting device 2 also includes a condensing lens layer 40 comprising an inorganic material on the second cladding layer 13. The condensing lens layer 40 includes a plurality of microlenses 40L on the light extraction side S1 of the condensing lens layer 40, and the plurality of microlenses 40L are respectively disposed for displaying a pixel P. The condensing lens layer 40 further includes a groove 41 between two adjacent microlenses of the plurality of microlenses 40L. In the light-emitting device 2 of this embodiment, the center of the groove 41 in the width direction and the center of the optical confinement structure 130 in the width direction are substantially aligned with each other.

[0182] Here, the condenser lens layer 40 corresponds to a specific example of a "condenser lens layer" according to an embodiment of the present disclosure. Here, the plurality of microlenses 40L corresponds to a specific example of a "plural microlens" according to an embodiment of the present disclosure. The groove 41 corresponds to a specific example of a "groove" according to an embodiment of the present disclosure.

[0183] <Configuration of the light-emitting device>

[0184] For example, the light-emitting device 2 is a device in which a first cladding layer 11, a light-emitting layer 12, and a second cladding layer 13 are stacked in this order. In the light-emitting device 2, a driving substrate 20 is disposed on one side of the first cladding layer 11, and one side of the second cladding layer 13 serves as a light extraction side S1. The first cladding layer 11 has a pair of surfaces (surface 11S1 and surface 11S2) that are opposite to each other, and surface 11S1 serves as the opposite surface of the light-emitting layer 12. The second cladding layer 13 has a pair of surfaces (surface 13S1 and surface 13S2) that are opposite to each other, surface 13S1 serves as the opposite surface of the light-emitting layer 12, and surface 13S2 serves as a light extraction surface. As described above, an optical confinement structure 130 is formed in the second cladding layer 13. Similar to the modified example 10 described above, the light-emitting device 2 is provided with a trench 19 that extends from the side of surface 11S2 of the first cladding layer 11 through the first cladding layer 11 and the light-emitting layer 12 to the second cladding layer 13, thereby forming a mesa 10M for each element to separate pixels. The first electrode 14 and the second electrode 15 are electrically coupled to the first cladding layer 11 and the second cladding layer 13, respectively. The first electrode 14 is disposed on one side of the surface 11S2 of the first cladding layer 11 and electrically coupled to the first cladding layer 11. An interlayer insulating layer 21 is disposed between the first cladding layer 11 and the driving substrate 20. The interlayer insulating layer 21 has a trench 19 embedded therein and includes the first electrode 14, the second electrode 15, and a plug 18 that couples the second electrode 15 and the wiring layer 17 to each other in the interlayer insulating layer 21. The interlayer insulating layer 21 further includes a plurality of contacts 22 embedded therein. The first cladding layer 11 and the second cladding layer 13 are electrically coupled to the driving substrate 20 via the contacts 22.

[0185] As described above, the light-emitting device 2 includes a focusing lens layer 40 on the second cladding layer 13.

[0186] The condenser lens layer 40 comprises an inorganic material and includes a plurality of microlenses 40L on the surface (surface 40S1) of the condenser lens layer 40. For example, as Figure 36A and Figure 36B As shown, a plurality of microlenses 40L are respectively provided for display pixels P having a substantially square or substantially hexagonal shape arranged in a two-dimensional array. The focusing lens layer 40 further includes a groove 41 between two adjacent microlenses of the plurality of microlenses 40L.

[0187] The groove 41 is configured to extend through the condenser lens layer 40 in the thickness direction (e.g., the Z-axis direction). In other words, as... Figure 36A and Figure 36B As shown, the groove 41 is disposed between two adjacent display pixels P to accommodate multiple microlenses separately disposed on the surface of the condenser lens layer 40 for each of the display pixels P.

[0188] As will be described in detail later, for example, Figure 34 As shown, in the light-emitting device 2, the center C4 of the width W4 of the groove 41 and the center C3 of the width W3 of the optical confinement structure 130 are substantially aligned with each other. It should be noted that, although... Figure 34 An example is shown where the width W3 of the optical confinement structure 130 and the width W4 of the groove 41 are the same, but this disclosure is not limited thereto, as long as the center C3 of the width W3 of the optical confinement structure 130 and the center C4 of the width W4 of the groove 41 are aligned with each other, as described above. For example, the width W3 of the optical confinement structure 130 may be formed to be larger than the width W4 of the groove 41.

[0189] In the light-emitting device 2, an optical confinement structure 130 is formed by ion implantation of impurities, and an impurity region 42 is formed on the side surface of the trench 41 by implanting impurities that are the same as those contained in the optical confinement structure 130.

[0190] Figures 36A to 36E Examples of the cross-sectional shapes of the microlens 40L are shown schematically. (Except in...) Figure 34 In addition to the convex shape shown, the plurality of microlenses 40L on the surface of the condenser lens layer 40 may, for example, have the following characteristics: Figure 36A The trapezoidal shape is shown in the figure. Furthermore, the plurality of microlenses 40L on the surface of the condenser lens layer 40 can, for example, have a trapezoidal shape as shown in the figure. Figure 36B The polygonal shape shown, or may have, for example, Figure 36C The concave shape shown. For example, the plurality of microlenses 40L on the surface of the condenser lens layer 40 can be as follows: Figure 36D The Fresnel lens shown in the image, or for example, such as Figure 36E The image shows a plurality of fine structures 43 arranged in a predetermined pattern as element lenses.

[0191] <Manufacturing Method of Light-Emitting Device>

[0192] The light-emitting device 2 can be manufactured, for example, as follows. Figures 37A to 37I Exemplary manufacturing steps of the light-emitting device 2 are shown.

[0193] First, such as Figure 37A As shown, in the first embodiment described above, the second cladding layer 13, the light-emitting layer 12, and the first cladding layer 11 are sequentially stacked on the support substrate 30. Thereafter, as... Figure 37A As shown, for example, trenches 19 reaching the second cladding layer 13 are formed using photolithography, thereby forming a mesa 10M. Subsequently, as... Figure 37A As shown, an insulating layer 21A is formed on the surface 13S1 of the second cladding 13 exposed on the bottom surface of the trench 19 and on the side and top surfaces of the platform 10M.

[0194] After that, as Figure 37BAs shown, for example, a first electrode 14 coupled to the surface 11S2 of the first cladding layer 11, a second electrode 15 coupled to the surface 13S1 of the second cladding layer 13, and a wiring layer 17 are formed by photolithography.

[0195] After that, as Figure 37C As shown, an insulating layer is further formed to embed the trench 19 therein, thereby forming an interlayer insulating layer 21, followed by the formation of the plug 18 using, for example, photolithography. Thereafter, as... Figure 37C As shown, the driving substrate 20 is bonded to the interlayer insulating layer 21.

[0196] After that, as Figure 37D As shown, the support substrate 30 is peeled off.

[0197] After that, as Figure 37E As shown, a silicon dioxide film is formed on the surface 13S2 of the second cladding layer 13 as a focusing lens layer 40. Thereafter, as... Figure 37E As shown, a resist film 202 is patterned on the condenser lens layer 40, and then a trench 41 extending through the condenser lens layer 40 from surface 41S1 to surface 41S2, which are two opposing surfaces of the condenser lens layer 40, is formed by, for example, photolithography.

[0198] After that, as Figure 37F As shown, the impurity concentration of the second cladding 13 exposed on the bottom portion of the trench 41 is controlled by ion implantation to form an optical confinement structure 130. In this case, impurities are also implanted into the condenser lens layer 40 on the side surface of the trench 41, thereby forming an impurity region 42. As described above, because the optical confinement structure 130 is formed through the trench 41 provided in the condenser lens layer 40, the center of the optical confinement structure 130 in the width direction is substantially aligned with the center of the trench 41 in the width direction.

[0199] After that, as Figure 37G As shown, the resist film 202 is removed by surface etching to expose the focusing lens layer 40.

[0200] After that, as Figure 37H As shown, a resist film 203 for the lens is patterned on the exposed condenser lens layer 40.

[0201] After that, as Figure 37I As shown, the surface of the condenser lens layer 40 is processed by etching to form a plurality of microlenses 40L. Thus, the process is complete. Figure 34 The light-emitting device 2 shown in the figure.

[0202] It should be noted that the above manufacturing method is merely exemplary, and other manufacturing methods may be used.

[0203] For example, in the manufacturing method described above, an example of forming an optical confinement structure 130 is shown, after which the surface of the condenser lens layer 40 is treated to form a plurality of microlenses 40L; however, this disclosure is not limited thereto. For example, the surface of the condenser lens layer 40 may be pre-treated to form a plurality of microlenses 40L while forming the trench 41, and then ion implantation is performed using the surface-treated condenser lens layer 40 as a mask to form the optical confinement structure 130.

[0204] <Work and Results>

[0205] The light-emitting device 2 of this embodiment has a configuration in which a first cladding layer 11, a light-emitting layer 12, and a second cladding layer 13 are stacked sequentially, and an optical confinement structure 130 is disposed in the second cladding layer 13, which serves as a light extraction surface. In this configuration, a condensing lens layer 40 comprising inorganic material is disposed on the second cladding layer 13. The condensing lens layer 40 includes a plurality of microlenses 40L on the light extraction side S1 of the condensing lens layer 40, and the plurality of microlenses 40L are respectively disposed for displaying a pixel P. The condensing lens layer 40 further includes a groove 41 between two adjacent microlenses of the plurality of microlenses 40L. The center of the groove 41 in the width direction and the center of the optical confinement structure 130 in the width direction are substantially coincident with each other.

[0206] In other words, the light-emitting device 2 of this embodiment is configured such that there is no positional deviation between the microlens 40L formed for each display pixel P and the optical confinement structure 130 disposed between the display pixels P. Therefore, the light utilization efficiency can be improved in the light-emitting device 2 of this embodiment. Furthermore, the light distribution deviation is reduced in the light-emitting device 2 of this embodiment. Therefore, in an image display device including the light-emitting device 2, in addition to the effects of the first embodiment, brightness and color uniformity on the display can be minimized.

[0207] Furthermore, in the light-emitting device 2 of this embodiment, compared with the light-emitting device 1G of modified example 7 in which the light-collecting structure is formed on the surface 13S2 serving as the light extraction surface of the second cladding layer 13, the microlens 40L for each display pixel P can be formed with high precision. That is, in the light-emitting device 2 of this embodiment, the yield rate can be improved and the manufacturing cost can be reduced.

[0208] <4. Variations>

[0209] <4-1. Variation Example 11>

[0210] Figure 38The illustration schematically shows an example of a cross-sectional configuration of a light-emitting device (light-emitting device 2A) according to a variation 11 of the present disclosure. As in the first embodiment described above, the light-emitting device 2A is suitable for an image display device (e.g., an electronic viewfinder 1124 of a digital still camera 1120, etc.) referred to as an LED display.

[0211] The light-emitting device 2A in this modified example includes a light-shielding film 44 embedded in a groove 41 disposed between two adjacent microlenses of the plurality of microlenses 40L. Apart from this, the light-emitting device 2A has a configuration that is substantially the same as that of the light-emitting device 2 in the second embodiment described above.

[0212] Here, the light-shielding film 44 corresponds to a specific example of a "light-shielding film" according to one embodiment of this disclosure, and is used to prevent color mixing with adjacent display pixels P. The light-shielding film 44 can be formed using, for example, a black matrix, a light-absorbing material, a light-reflecting material, etc. Examples of light-absorbing materials include carbon (C). Examples of light-reflecting materials include metallic materials such as aluminum (Al), silver (Ag), chromium (Cr), nickel (Ni), etc. The light-shielding film 44 can be a single-layer film using any of the above-described materials, or a stacked film in which multiple types of the above-described materials are selected and stacked at a predetermined period.

[0213] As described above, the light-emitting device 2A of this modified example includes a light-shielding film 44 embedded in a groove 41 disposed between two adjacent microlenses of the plurality of microlenses 40L. Therefore, in addition to the effects of the second embodiment described above, it can also prevent color mixing to adjacent display pixels P.

[0214] <4-2. Variation Example 12>

[0215] Figure 39 An example of a cross-sectional configuration of a light-emitting device (light-emitting device 2B) according to a variation 12 of this disclosure is schematically shown. As with the first embodiment described above, the light-emitting device 2B is suitable for an image display device (e.g., an electronic viewfinder 1124 of a digital still camera 1120, etc.) referred to as an LED display.

[0216] In the light-emitting device 2B of this modified example, the side surface 41S of the groove 41 provided between two adjacent microlenses of the plurality of microlenses 40L is an inclined surface, and its width gradually decreases from the light extraction side S1 toward the second cladding 13. Apart from this, the light-emitting device 2B has a configuration that is substantially similar to that of the light-emitting device 2 of the second embodiment and the light-emitting device 2A of the modified example 11.

[0217] Using the same configuration, the light-emitting device 2B of this variant can achieve effects similar to those of the light-emitting device 2 of the second embodiment and the light-emitting device 2A of the variant 11.

[0218] <4-3. Variation Example 13>

[0219] Figure 40 An example of a cross-sectional configuration of a light-emitting device (light-emitting device 2C) according to a variation 13 of this disclosure is schematically shown. As with the first embodiment described above, the light-emitting device 2C is suitable for an image display device (e.g., an electronic viewfinder 1124 of a digital still camera 1120, etc.) referred to as an LED display.

[0220] The second embodiment described above illustrates an example in which a mesa 10M is formed for each display pixel P; however, this disclosure is not limited thereto. In the light-emitting device 2C of this modified example, like the light-emitting device 1 of the first embodiment and the light-emitting device 1D of modified example 4, the first cladding layer 11 and the light-emitting layer 12 extend on the pixel array portion 100A as a common layer for multiple display pixels P. Apart from this, the light-emitting device 2C has a configuration that is substantially the same as that of the light-emitting device 2 of the second embodiment described above.

[0221] With this configuration, the light-emitting device 2C of this modified example can also achieve the same effect as the light-emitting device 2 of the second embodiment described above.

[0222] <4-4. Variation Example 14>

[0223] Figure 41 The illustration schematically shows an example of a cross-sectional configuration of a light-emitting device (light-emitting device 2D) according to a variation 14 of this disclosure. As in the first embodiment described above, the light-emitting device 2D is suitable for an image display device called an LED display (e.g., the electronic viewfinder 1124 of a digital still camera 1120, etc.).

[0224] The second embodiment described above illustrates an example in which pixels are separated by forming a mesa 10M for each display pixel P; however, this disclosure is not limited thereto. In the light-emitting device 2D of this modified example, as in modified example 13, the optical confinement structure 110 is provided on the first cladding layer 11 extending on the pixel array portion 100A, serving as a common layer for the plurality of display pixels P, just like the light-emitting device 1H of modified example 8. Apart from this, the light-emitting device 2D has a configuration substantially the same as that of the light-emitting device 2 of the second embodiment described above.

[0225] Furthermore, the light-emitting device 2D according to this modified example can also achieve the same effect as the light-emitting device 2 of the second embodiment described above.

[0226] <4-5 Other variations>

[0227] The techniques described in the light-emitting devices 1, 1A to 1S, 2 and 2A to 2D according to the first and second embodiments and variations 1 to 14 can be combined with each other.

[0228] For example, the light-emitting device 2A of Modified Example 1 and the light-emitting device 2C of Modified Example 3 can be combined, and a light-shielding film 44 can be formed in the trench 41 of the light-emitting device 2C, wherein the first cladding layer 11 and the light-emitting layer 12 extend on the pixel array portion 100A as a common layer for multiple display pixels P. The light-emitting device 2B of Modified Example 2 can be further combined, and the side surface 41S of the trench 41 can have a tapered angle. Similarly, for example, the light-emitting device 2A of Modified Example 1 and the light-emitting device 2D of Modified Example 4 can be combined, and a light-shielding film 44 can be formed in the trench 41 of the light-emitting device 2D, wherein the optical confinement structure 110 is disposed in the first cladding layer 11 as a common layer for multiple display pixels P. The light-emitting device 2B of Modified Example 2 can be further combined, and the side surface 41S of the trench 41 can have a tapered angle.

[0229] <5. Application Examples>

[0230] <Application Example 1>

[0231] Figure 31A This is a front view showing an example of the appearance of a digital camera (electronic device) 1120. Figure 31B This is a rear view showing an example of the appearance of a digital still camera 1120. The digital still camera 1120 is an interchangeable lens monolens reflex type. The digital still camera 1120 includes an interchangeable imaging lens unit (interchangeable lens) 1121 located approximately at the center of the front surface of the camera body 1122, and a grip portion 1123 for the photographer to hold on the left side of the front surface.

[0232] The monitor 1126 is positioned offset to the left from the center of the rear surface of the camera body 1122. An electronic viewfinder (eyepiece window) 1124 is located above the monitor 1126. By viewing through the electronic viewfinder 1124, the photographer can visually identify and determine the composition of the optical image of the object guided through the imaging lens unit 1121. The electronic viewfinder 1124 includes a light-emitting device 1.

[0233] <Application Example 2>

[0234] The light-emitting device disclosed herein (e.g., light-emitting device 1) can also be applied to head-mounted displays (hereinafter referred to as HMDs). The head-mounted display 1130A can be used in VR (virtual reality), AR (augmented reality), MR (mixed reality), SR (alternative reality), etc.

[0235] Figure 32A This is a perspective view showing the appearance of a head-mounted display (electronic device) 1130A. For example, the head-mounted display 1130A includes ear hooks 1131 on both sides of an eyeglass-shaped display portion 1132 for attachment to a user's head. The display portion 1132 includes a light-emitting device 1.

[0236] Figure 32B This is a perspective view showing the appearance of another head-mounted display (electronic device). The head-mounted display is smart glasses 1130B that displays various types of information on glasses 1133. Smart glasses 1130B includes a main body, an arm 1135, and a lens barrel 1136. The main body 1134 is coupled to the arm 1135. The main body 1134 can be attached to and detached from glasses 1133. The main body 1134 has a built-in control board and a built-in display for controlling the operation of smart glasses 1130B. The main body 1134 and the lens barrel 1136 are coupled to each other via the arm 1135. The lens barrel 1136 outputs image light from the main body 1134 to one side of the lens 1137 of glasses 1133 via the arm 1135. The image light enters the human eye through the lens 1137. Figure 32B The wearer of the smart glasses 1130B shown can not only visually recognize surrounding conditions, but also visually recognize various types of information output from the lens barrel 1136 in the same way as normal glasses. The main body 1134 includes a light-emitting device 1.

[0237] <Application Example 3>

[0238] Figure 33 This is a perspective view showing an example of the appearance of a television device (electronic device) 1140. The television device 1140 includes, for example, an image display screen 1141 including a front panel 1142 and a filter glass 1143. The image display screen 1141 includes a light-emitting device 1.

[0239] Although this disclosure has been described with reference to the first and second embodiments, variations 1 to 14, and application examples, this disclosure is not limited to the embodiments described above, and various variations are possible. For example, two or more of the variations 1 to 8 described above may be combined.

[0240] It should be noted that the effects described in this specification are merely examples and are not limiting. Any other effects can also be achieved.

[0241] This technology can have the following configuration. According to this technology with the following configuration, light diffusion in the in-plane direction orthogonal to the stacking direction of the aforementioned layers can be reduced without obstructing the light path of light output from the emitting layer. Therefore, external quantum efficiency can be improved. (1)

[0243] A light-emitting device, comprising: First conductivity type layer; Second conductivity type layer; A light-emitting layer is disposed between a first conductivity type layer and a second conductivity type layer; and An optical confinement structure is formed in a first conductivity type layer, a second conductivity type layer, or both. (2)

[0245] According to the light-emitting device of (1), wherein, The second conductivity type layer has a first surface and a second surface, the first surface being opposite to the light-emitting layer, and the second surface being on the side opposite to the first surface and serving as a light extraction surface. The optical confinement structure is formed in the second conductivity type layer. (3)

[0247] According to the light-emitting device of (2), the optical confinement structure extends through the second conductivity type layer from the first surface to the second surface. (4)

[0249] According to the light-emitting device of (2), the optical confinement structure is formed from the second surface of the second conductivity type layer toward the first surface and has a bottom portion in the second conductivity type layer. (5)

[0251] According to any one of (2) to (4) the light-emitting device, wherein, The light-emitting layer includes one or more light-emitting regions within the light-emitting layer, and In the planar view, the optical confinement structure is formed to individually surround multiple light-emitting areas. (6)

[0253] According to the light-emitting device of (5), in the plan view, the optical confinement structure surrounding one or more light-emitting areas has segmented parts. (7)

[0255] According to the light-emitting device of (5) or (6), it further includes: The first electrode is electrically coupled to the first conductivity type layer; The second electrode is electrically coupled to a layer of the second conductivity type; and An opening extends through the first conductivity type layer and the light-emitting layer to reach the second conductivity type layer, wherein... The second electrode passes through an opening from one side of the first conductivity type layer and is electrically coupled to the second conductivity type layer. (8)

[0257] According to the light-emitting device of (7), a second electrode and an opening are provided for each of one or more light-emitting regions individually surrounded by an optical confinement structure. (9)

[0259] According to the light-emitting device of (7) or (8), wherein, Multiple luminescent regions are arranged in an array within the luminescent layer, and The second electrode and the opening are disposed on the outer periphery of multiple light-emitting regions arranged in an array. (10)

[0261] According to any one of (7) to (9), the light-emitting device, wherein, The first conductivity type layer has a third surface and a fourth surface, the third surface being opposite to the light-emitting layer, and the fourth surface being on the opposite side of the third surface. For each of the one or more light-emitting regions individually surrounded by the optical confinement structure, the first electrode is disposed on the fourth surface side of the first conductivity type layer. (11)

[0263] The light-emitting device according to any one of (5) to (10) further includes: The first electrode is electrically coupled to a first conductivity type layer; and The second electrode is electrically coupled to a layer of the second conductivity type, wherein... The second electrode is configured as a common electrode for multiple light-emitting regions on the second surface. (12)

[0265] According to any one of (5) to (11), the light-emitting device wherein the second conductivity type layer includes a light-concentrating structure for each of one or more light-emitting regions. (13)

[0267] According to any one of (2) to (12), the light-emitting device, wherein, The light-emitting layer includes one or more light-emitting regions within the light-emitting layer, and The first conductive type layer and the light-emitting layer are divided into one or more light-emitting regions by trenches that penetrate through the first conductive type layer and the light-emitting layer to the second conductive type layer. (14)

[0269] The light-emitting device according to any one of (1) to (13) wherein the optical confinement structure is formed in the first conductivity type layer. (15)

[0271] The light-emitting device according to any one of (1) to (14) includes, as an optical confinement structure, a first optical confinement structure formed in a first conductivity type layer and a second optical confinement structure formed in a second conductivity type layer. (16)

[0273] According to the light-emitting device of (15), the width of the second optical confinement structure is smaller than the width of the first optical confinement structure. (17)

[0275] According to the light-emitting device of (16), the optical confinement structure includes an impurity region. (18)

[0277] The light-emitting device according to any one of (2) to (17) further includes: The focusing lens layer comprises an inorganic material on the second surface of the second conductivity type layer, wherein... The focusing lens layer includes multiple microlenses arranged in an array and grooves between two adjacent microlenses. The center of the groove in the width direction and the center of the optical confinement structure in the width direction are substantially aligned with each other. (19)

[0279] According to the light-emitting device of (18), wherein, The optical confinement structure includes impurity regions, and The condenser lens layer includes impurities included in the optical confinement structure on the side surface of the trench. (20)

[0281] According to the light-emitting device of (18) or (19), the trench includes a light-shielding film embedded in the trench, the light-shielding film including a black matrix, a light-absorbing material or a light-reflecting material. (twenty one)

[0283] According to any one of (18) to (20), the light-emitting device, wherein, The focusing lens layer has a fifth surface and a sixth surface. The fifth surface is opposite to the second surface of the second conductivity type layer, and the sixth surface is on the opposite side of the fifth surface and has a plurality of microlenses formed thereon. The sides of the groove have a tapered angle whose width gradually decreases from the sixth surface toward the fifth surface. (twenty two)

[0285] An image display device includes a light-emitting device, the light-emitting device comprising: First conductivity type layer; Second conductivity type layer; A light-emitting layer is disposed between a first conductivity type layer and a second conductivity type layer; and An optical confinement structure is formed in a first conductivity type layer, a second conductivity type layer, or both. (twenty three)

[0287] A method for manufacturing a light-emitting device, the method comprising: An inorganic material layer is formed on one side of the second conductivity type layer of the semiconductor stack, the semiconductor stack including a first conductivity type layer, a light-emitting layer and a second conductivity type layer stacked in the following order; Grooves are formed in an inorganic material layer, the grooves having a predetermined pattern and extending through the inorganic material layer; An optical confinement structure is formed by implanting impurity ions into a second conductivity type layer via trenches; and Multiple microlenses are formed by processing the surface of an inorganic material layer.

[0288] This application claims the benefit of Japanese priority patent application JP2024-058023, filed with the Japan Patent Office on March 29, 2024, the entire contents of which are incorporated herein by reference.

[0289] Those skilled in the art will understand that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors, as long as they are within the scope of the appended claims or their equivalents.

Claims

1. A light-emitting device, comprising: First conductivity type layer; Second conductivity type layer; A light-emitting layer is disposed between the first conductivity type layer and the second conductivity type layer; as well as An optical confinement structure is formed in a first conductivity type layer, a second conductivity type layer, or both.

2. The light-emitting device according to claim 1, wherein, The second conductive layer has a first surface and a second surface, the first surface being opposite to the light-emitting layer, and the second surface being on the side opposite to the first surface and serving as a light-extracting surface. The optical confinement structure is formed in the second conductivity type layer.

3. The light-emitting device according to claim 2, wherein, The optical confinement structure extends through the second conductivity type layer from the first surface to the second surface.

4. The light-emitting device according to claim 2, wherein, The optical confinement structure is formed from the second surface of the second conductivity type layer toward the first surface, and has a bottom portion in the second conductivity type layer.

5. The light-emitting device according to claim 2, wherein, The light-emitting layer includes one or more light-emitting regions within the light-emitting layer, and In the plan view, the optical confinement structure is formed to individually surround the plurality of light-emitting regions.

6. The light-emitting device according to claim 5, wherein, In a plan view, the optical confinement structure surrounding the one or more light-emitting regions has segmented portions.

7. The light-emitting device according to claim 5, further comprising: The first electrode is electrically coupled to the first conductivity type layer; The second electrode is electrically coupled to the second conductivity type layer; as well as An opening extends through the first conductivity type layer and the light-emitting layer to reach the second conductivity type layer, wherein... The second electrode is electrically coupled to the second conductivity type layer through the opening from one side of the first conductivity type layer.

8. The light-emitting device according to claim 7, wherein, The second electrode and the opening are provided for each of the one or more light-emitting regions individually surrounded by the optical confinement structure.

9. The light-emitting device according to claim 7, wherein, The plurality of light-emitting regions are arranged in an array in the light-emitting layer, and The second electrode and the opening are disposed on the outer periphery of the plurality of light-emitting regions arranged in an array.

10. The light-emitting device according to claim 7, wherein, The first conductive layer has a third surface and a fourth surface, the third surface being opposite to the light-emitting layer, and the fourth surface being on the opposite side of the third surface. For each of the one or more light-emitting regions individually surrounded by the optical confinement structure, the first electrode is disposed on the fourth surface side of the first conductivity type layer.

11. The light-emitting device according to claim 5, further comprising: The first electrode is electrically coupled to the first conductivity type layer; as well as The second electrode is electrically coupled to the second conductivity type layer, wherein... The second electrode is configured on the second surface as a common electrode for the plurality of light-emitting regions.

12. The light-emitting device according to claim 5, wherein, The second conductive type layer includes a light-focusing structure for each of the one or more light-emitting regions.

13. The light-emitting device according to claim 2, wherein, The light-emitting layer includes one or more light-emitting regions within the light-emitting layer, and The first conductive type layer and the light-emitting layer are divided for each of the one or more light-emitting regions by trenches that penetrate through the first conductive type layer and the light-emitting layer to the second conductive type layer.

14. The light-emitting device according to claim 1, wherein, The optical confinement structure is formed in the first conductivity type layer.

15. The light-emitting device according to claim 1, wherein, The light-emitting device includes a first optical confinement structure formed in the first conductivity type layer and a second optical confinement structure formed in the second conductivity type layer, which serve as the optical confinement structure.

16. The light-emitting device according to claim 15, wherein, The width of the second optical confinement structure is smaller than the width of the first optical confinement structure.

17. The light-emitting device according to claim 16, wherein, The optical confinement structure includes an impurity region.

18. The light-emitting device according to claim 2, further comprising: The focusing lens layer comprises an inorganic material on the second surface of the second conductivity type layer, wherein... The focusing lens layer includes a plurality of microlenses arranged in an array and a groove between two adjacent microlenses among the plurality of microlenses, and The center of the groove in the width direction and the center of the optical confinement structure in the width direction are substantially aligned with each other.

19. The light-emitting device according to claim 18, wherein, The optical confinement structure includes impurity regions, and The condenser lens layer includes impurities included in the optical confinement structure on the side surface of the trench.

20. An image display device, comprising a light-emitting device, the light-emitting device comprising: First conductivity type layer; Second conductivity type layer; A light-emitting layer is disposed between the first conductivity type layer and the second conductivity type layer; as well as An optical confinement structure is formed in a first conductivity type layer, a second conductivity type layer, or both.

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