Optoelectronic component and method for producing an optoelectronic component

Abstract

The optoelectronic component (25) comprises a plurality of optoelectronic arrangements (1). Each optoelectronic arrangement comprises a substrate (2) having a top side (3), a bottom side (4) and a lateral face (19), and an optoelectronic semiconductor chip arranged at the top side (3) and designed to emit electromagnetic radiation at an emission face (13) facing away from the substrate (2). The optoelectronic arrangements (1) are arranged laterally adjacent to one another such that the substrates (2) are parallel to one another. The optoelectronic arrangements (1) are mechanically connected to one another by a frame (26) arranged between the lateral faces (19) of the substrates (2) of adjacent optoelectronic arrangements (1) and extending between the bottom side (4) and the top side (3) of the substrates (2).

Description

[0001] describe

[0002] This invention relates to optoelectronic components and methods for manufacturing optoelectronic components.

[0003] This patent application claims priority to German patent application DE 10 2024 108 960.1, the disclosure of which is incorporated herein by reference.

[0004] Cars with ADB headlights (Adaptive Driving Beams) are known in the prior art. These ADB headlights are designed to ensure improved road lighting while darkening the area for oncoming traffic.

[0005] Various schemes for implementing ADB modules are currently known. For example, ADB modules with discrete chip packages (CSPs) are known. In this case, when manufacturing ADB headlights, the chip housings must be arranged very close to each other because CSPs always include a distance between the light-emitting surfaces of the individual pixels, which is typically greater than the distance between surface mount devices (SMDs).

[0006] This principle contradicts the fact that, in the case of CSP, the chips are embedded into the housing material using FAM (film-assisted molding, a variation of transfer molding), meaning the housing walls have a significant thickness parallel to the light-emitting areas. Due to the lateral distance between the light-emitting surfaces of the discrete chips, complex optics may be required to produce a coherent light-emitting image. Furthermore, arranging and soldering discrete chips at close pitch requires even more complex and expensive, and potentially unavailable, techniques.

[0007] Furthermore, ADB headlights with integrated circuits (ICs) and LED chips (light-emitting diodes) arranged on the ICs are known. These can achieve smaller distances, uniform illumination areas, and high resolution. Such solutions also achieve simpler optical systems, but they are quite expensive as components because correspondingly large ICs and LED chips must be provided for each luminous area size.

[0008] The object of this invention is to provide an improved optoelectronic component and to specify an improved method for manufacturing the optoelectronic component. This object is achieved by an optoelectronic component having the features of the respective independent claims and a method for manufacturing the optoelectronic component. Other advantageous improvements are specified in the dependent claims.

[0009] An optoelectronic component includes multiple optoelectronic arrangements. Each optoelectronic arrangement includes a substrate and a optoelectronic semiconductor chip. The substrate has a top side, a bottom side away from the top side, and a side surface extending between the top and bottom sides. The optoelectronic semiconductor chip is arranged on the top side of the substrate and is designed to emit electromagnetic radiation at an emitting surface away from the top side of the substrate. The optoelectronic arrangements are arranged laterally adjacent to each other such that the substrates of the optoelectronic arrangements are parallel to each other. The optoelectronic arrangements are mechanically connected to each other by a frame arranged between the side surfaces of the substrates of adjacent optoelectronic arrangements and extending between the bottom and top sides of the substrates.

[0010] In other words, the substrates of each optoelectronic arrangement are embedded in a frame, such that the frame is arranged between the sides of the substrates and in the area between the bottom and top sides of the substrates. The frame mechanically connects adjacent optoelectronic arrangement substrates, for example, by adhesive bonding to the sides.

[0011] Optoelectronic components are based on the concept of providing modules comprising multiple optoelectronic arrangements, also referred to as pixels, wherein the pixels are not simultaneously fabricated on a carrier, but are first manufactured individually and then arranged on a temporary carrier to connect them to a frame. Optoelectronic components including connected optoelectronic arrangements can also be referred to as modules comprising multiple pixels, such as LED modules.

[0012] Advantageously, multiple modules can be used to manufacture larger arrays. An optoelectronic component with several modules can, for example, be designed as an ADB headlight. In this case, the module can also be referred to as an ADB module. Here, the problem of arranging individual pixels with high precision is solved by using prefabricated modules, which already include a small lateral distance between the emitting surfaces of the optoelectronic semiconductor chips of adjacent pixels. Therefore, the module includes uniform emission characteristics and high contrast. Since the precise arrangement and soldering of individual pixels can be eliminated by using modules, manufacturing costs can be significantly reduced.

[0013] Individual optoelectronic arrangements / pixels can also be tested before being attached to the frame. This advantageously allows for the avoidance of significant yield losses, as yield losses for individual pixels within an array increase compared to pixels manufactured simultaneously within the component.

[0014] In this embodiment, a wavelength conversion material is disposed at the emitting surface of the optoelectronic semiconductor chip. The wavelength conversion material is designed to absorb electromagnetic radiation of a first wavelength spectrum emitted by the optoelectronic semiconductor chip and to emit electromagnetic radiation of a second wavelength spectrum. Advantageously, overall, electromagnetic radiation with a combined wavelength spectrum is emitted.

[0015] For example, optoelectronic semiconductor chips can be designed to emit blue light, while wavelength conversion materials are designed to absorb blue light and emit yellow light after relaxing to a lower energy level. Overall, white light is emitted, which is advantageously required by ADB headlights. White light conversion can be achieved through thin layers of wavelength conversion materials, and advantageously provides high contrast. This means that requirements in the field of automotive ADB headlights can be met.

[0016] In this implementation, the stabilizing layer is disposed on the emitting surface of the optoelectronic semiconductor chip, or on the surface of the wavelength conversion material away from the emitting surface of the optoelectronic semiconductor chip. In other words, the stabilizing layer is disposed on the emitting surfaces of all optoelectronic semiconductor chips in the optoelectronic arrangement, or on the surface of each wavelength conversion material disposed on the emitting surface. Advantageously, in addition to the permanent stability provided by the frame, the optoelectronic components are also temporarily mechanically stabilized. The stabilizing layer also protects the module from contamination. Furthermore, by providing the stabilizing layer, the emitting surfaces of the optoelectronic semiconductor chips and the electrical contacts of the module can be protected.

[0017] The stabilizing layer can be designed as, for example, an adhesive tape. Adhesive tape may be preferred when the frame provides sufficient mechanical stability. However, the frame can also be flexible. In this case, it is advantageous to design the stabilizing layer as a hard casting that provides significant mechanical stability. The hard casting may include, for example, glass, metal, or silicon.

[0018] In one embodiment, the optoelectronic semiconductor chip includes a mounting surface facing the top side of the substrate and sidewalls extending between the mounting surface and the emitting surface. The optoelectronic semiconductor chips are disposed on the top side of the substrate such that the three sidewalls of each optoelectronic semiconductor chip are flush with the three sides of the substrate, or such that the optoelectronic semiconductor chip protrudes beyond the three sides of the substrate.

[0019] Alternatively, in an embodiment, the optoelectronic semiconductor chip is disposed on the top side of the substrate such that two sidewalls of each optoelectronic semiconductor chip are flush with two sides of the substrate, or the optoelectronic semiconductor chip protrudes beyond two sides of the substrate. Typically, the optoelectronic semiconductor chip can be disposed on the top side of the substrate such that at least one sidewall of each optoelectronic semiconductor chip is flush with one side of the corresponding substrate, or the optoelectronic semiconductor chip protrudes beyond at least one side of the substrate.

[0020] In this embodiment, each substrate includes a side surface away from the optoelectronic semiconductor chip. The lateral distance between the emitting surfaces of adjacent optoelectronic semiconductor chips is less than the distance between the optoelectronic semiconductor chip and the side surface of the substrate away from the optoelectronic semiconductor chip, and in particular, less than 10% of the distance between the optoelectronic semiconductor chip and the away side surface.

[0021] In other words, in configurations where optoelectronic semiconductor chips are arranged on the top side of a substrate such that at least one sidewall of each optoelectronic semiconductor chip is flush with a corresponding side of the substrate, or where the optoelectronic semiconductor chips protrude beyond at least one side of the substrate, the substrate always protrudes below the optoelectronic semiconductor chips. Those sides of the substrate that are neither flush with nor protrude beyond the optoelectronic semiconductor chips are the sides of the substrate furthest from the optoelectronic semiconductor chips.

[0022] Advantageously, the optoelectronic arrangement in this configuration comprises only a narrow, non-emitting strip formed between the optoelectronic semiconductor chip and the side of the substrate away from the optoelectronic semiconductor chip. The non-emitting strip is formed by portions of the substrate, namely those portions protruding below the optoelectronic semiconductor chip. The distance between the optoelectronic semiconductor chip and the side of the substrate away from the optoelectronic semiconductor chip can also be referred to as the width of the non-emitting strip.

[0023] Because the lateral distance between the emitting surfaces of adjacent optoelectronic semiconductor chips is smaller than the width of the non-emitting strip, the emitting surfaces of adjacent pixels in the module are very close to each other.

[0024] In other words, the distance between the emitting surfaces of adjacent optoelectronic semiconductor chips can be less than 10% of the width of the non-emitting strip of the optoelectronic arrangement measured from the side of the substrate away from the optoelectronic semiconductor chip. However, in general, the distance between the emitting surfaces of adjacent optoelectronic semiconductor chips is not limited to a specific value.

[0025] In this embodiment, the optoelectronic semiconductor chip is pixelated, each including multiple emitting surfaces on the top side facing away from the substrate. Advantageously, the optoelectronic components include sub-pixels that are very close to each other.

[0026] In this embodiment, when the optoelectronic semiconductor chip is not pixelated, the optoelectronic arrangement includes the following exemplary contact pads. A first upper contact pad and a second upper contact pad are respectively disposed on each top side of the substrate. The optoelectronic semiconductor chip is disposed at and electrically connected to the first upper contact pad. The second upper contact pad is disposed within a non-light-emitting strip. Therefore, the non-light-emitting strip may be primarily limited to the area of ​​the second contact pad and a portion of the first upper contact pad.

[0027] In another embodiment, a first lower contact pad and a second lower contact pad are respectively arranged on each bottom side of the substrate. A first upper contact pad is electrically connected to the first lower contact pad, and a second upper contact pad is electrically connected to the second lower contact pad. Advantageously, the optoelectronic arrangement can be made at the bottom side of the substrate.

[0028] If the optoelectronic semiconductor chip is pixelated, each optoelectronic arrangement can include more contact pads. For example, if the optoelectronic semiconductor chip includes two sub-pixels, each optoelectronic arrangement can include a total of three upper contact pads and optionally three lower contact pads.

[0029] In one embodiment, each optoelectronic semiconductor chip includes a top contact pad disposed on its emitting surface. The top contact pad is connected to a second upper contact pad via a bonding wire. In another embodiment, the bonding wire is embedded in an encapsulation.

[0030] In one embodiment, the optoelectronic component includes a carrier and at least one module mechanically connected to an optoelectronic arrangement according to one of the embodiments. The module and at least one integrated circuit are arranged on the carrier and electrically connected to each other. For example, a first upper contact pad and a third upper contact pad can be connected to other contact pads of the integrated circuit (IC) via bonding wires. The IC can be designed as a driver IC. The IC may also include bus connections.

[0031] A method of manufacturing an optoelectronic component includes the following steps: Providing a plurality of individual optoelectronic arrangements. Providing the optoelectronic arrangements may include manufacturing the individual optoelectronic arrangements. Each optoelectronic arrangement includes a substrate and an optoelectronic semiconductor chip. The substrate has a top side, a bottom side away from the top side, and a side extending between the top and bottom sides. The optoelectronic semiconductor chip is arranged at the top side of the substrate and is designed to emit electromagnetic radiation at an emitting surface at the top side of the substrate away from the substrate. The optoelectronic arrangements are arranged laterally adjacent to each other on a temporary carrier such that the substrates of the optoelectronic arrangements are parallel to each other. The optoelectronic arrangements are mechanically connected to each other by arranging frame material on the temporary carrier between the side surfaces of the substrates of adjacent optoelectronic arrangements and between the bottom and top sides of the substrates. The temporary carrier is then removed.

[0032] Optoelectronic arrays can be arranged laterally adjacent to each other with high precision and close spacing. Interconnected optoelectronic arrays form modules. After removing the temporary carrier, the modules can be used to fabricate larger two-dimensional arrays without having to arrange each optoelectronic array individually on a carrier.

[0033] In this embodiment, the frame is disposed between the substrates of the optoelectronic arrangement. Advantageously, the optoelectronic arrangement can be easily connected by distributing material on the carrier and between the substrates. The frame can be designed as a rigid casting and includes, for example, one of the following materials: silicone, titanium dioxide, silicon dioxide, or alumina. If the frame comprises plastic, it may also include a filler material, such as filler particles for providing stiffness.

[0034] In this implementation, the operation of each optoelectronic arrangement is tested before it is placed on the temporary carrier. Advantageously, after testing, only correctly operating optoelectronic arrangements can be used and connected via the frame. Therefore, since only correctly functioning optoelectronic arrangements can be used for the optoelectronic components, the overall yield of the optoelectronic components can be significantly improved. Faulty optoelectronic arrangements will result in individual pixel yield losses, which accumulate in the pixel array as a significantly larger overall yield loss.

[0035] In one implementation, after the optoelectronic arrangement is connected, a stabilizing layer is disposed on the emitting surface of the optoelectronic semiconductor chip. Optionally, the stabilizing layer may be disposed on the wavelength conversion material. Advantageously, the stabilizing layer provides additional mechanical stability and protection.

[0036] In one embodiment, at least one module of the connected optoelectronic arrangement is disposed on a carrier and electrically connected to at least one integrated circuit, such as a driver IC. An optional stabilizing layer may be removed before or after the module is disposed on the carrier and before the module is connected to the IC.

[0037] The above-described properties, features, and advantages of the invention, as well as the ways in which they are realized, will become clearer and more readily understood in conjunction with the following description of exemplary embodiments in more detail with reference to the accompanying drawings. Here, each case is illustrated schematically:

[0038] Figure 1 Top view and cross-sectional side view of the optoelectronic arrangement according to the first embodiment;

[0039] Figure 2 Top view and cross-sectional side view of the optoelectronic arrangement according to the second embodiment;

[0040] Figure 3: Top view and cross-sectional side view of the optoelectronic arrangement according to the third embodiment;

[0041] Figure 4 Top view of the optoelectronic arrangement according to the fourth embodiment;

[0042] Figure 5 Top and side views of the optoelectronic components;

[0043] Figure 6 Top view and cross-sectional side view of another optoelectronic component;

[0044] Figure 7 Methods and steps for manufacturing optoelectronic components.

[0045] Figure 1 The optoelectronic arrangement 1 according to the first exemplary embodiment is schematically shown in a top view and a cross-sectional side view along the plane indicated in the top view.

[0046] The optoelectronic arrangement 1 includes a substrate 2. The substrate 2 includes a top side 3, a bottom side 4 away from the top side 3, and a side surface 19 extending between the top side 3 and the bottom side 4. The substrate 2 is exemplary designed as a ceramic substrate and includes aluminum nitride (AlN). However, the substrate 2 may alternatively or additionally include other materials, such as silicon.

[0047] A first upper contact pad 5 and a second upper contact pad 6 are arranged at the top side 3 of the substrate 2. A first lower contact pad 8 and a second lower contact pad 9 are arranged at the bottom side 4 of the substrate 2. The first upper contact pad 5 is electrically connected to the first lower contact pad 8, and the second upper contact pad 6 is electrically connected to the second lower contact pad 9.

[0048] Upper contact pads 5 and 6 are arranged laterally adjacent to each other on the top side 3 of the substrate 2. Lower contact pads 8 and 9 are arranged laterally adjacent to each other on the bottom side 4 of the substrate 2. The upper contact pads 5 and 6 and the lower contact pads 8 and 9 are connected to each other through an electrical via 11. The via 11 extends from the bottom side 4 to the top side 3 of the substrate 2. The contact pads 5, 6, 8, 9 and the via 11 are made of a metallic material, such as copper. The contact pads 5, 6, 8, 9 may additionally include a gold coating. However, the contact pads 5, 6, 8, 9 and the via 11 may also include other metallic or conductive materials. Typically, the lower contact pads 8 and 9 and the via 11 may be omitted.

[0049] In an alternative embodiment, substrate 2 is designed as a leadframe substrate, comprising, for example, copper and an anti-oxidation gold coating. In this case, the upper and lower contact pads 5, 6, 8, and 9, which are electrically connected to each other, are formed by segments of the leadframe substrate. For example, the first upper contact pad 5 and the first lower contact pad 8 are formed by segments of the leadframe substrate extending from the bottom side 4 to the top side 3. In this case, vias 11 are not required to make the upper and lower contact pads 5, 6, 8, and 9 contact each other because substrate 2 is conductive and the contact pads 5, 6, 8, and 9 are formed by the surfaces of segments of the leadframe substrate.

[0050] A photoelectric semiconductor chip 12 is disposed at and electrically connected to the first upper contact pad 5. The photoelectric semiconductor chip 12 is designed to emit electromagnetic radiation at its emitting surface 13 on the top side 3 away from the substrate 2. The photoelectric semiconductor chip 12 can be designed, for example, as a light-emitting diode (LED). Alternatively, the photoelectric semiconductor chip 12 can be designed as a laser diode. Solder material 24 can be disposed between the first upper contact pad 5 and the photoelectric semiconductor chip 12, thereby bonding the photoelectric semiconductor chip 12 to the first upper contact pad 5 in an adhesive manner, i.e., fixing and electrically connecting it to the surface of the first upper contact pad 5.

[0051] In addition to the top view and the cross-sectional side view Figure 1 The diagram also shows a transparent top view, which illustrates the arrangement of the upper contact pads 5 and 6 on the top side 3 of the substrate 2. The transparent top view also shows a cross-sectional side view extending along its cross-sectional plane.

[0052] The first upper contact pad 5 protrudes below the optoelectronic semiconductor chip 12. In other words, the optoelectronic semiconductor chip 12 does not completely cover the first upper contact pad 5. The section of the first upper contact pad 5 not covered by the optoelectronic semiconductor chip 12 is arranged laterally adjacent to the second upper contact pad 6. As a result, both the first and second upper contact pads 5 are exposed and can make electrical contact. The lower contact pads 8 and 9 and the via 11 can also be omitted.

[0053] Wavelength conversion material 14 is disposed on the emitting surface 13 of the optoelectronic semiconductor chip 12. Wavelength conversion material 14 includes a phosphor, which is embedded, for example, in a plastic such as silicone. The phosphor is designed to absorb electromagnetic radiation emitted by the optoelectronic semiconductor chip 12 during operation and to emit electromagnetic radiation of a longer wavelength. Generally, electromagnetic radiation is emitted corresponding to the superposition of the emission spectrum of the optoelectronic semiconductor chip 12 and the emission spectrum of the phosphor, thereby, for example, producing white light. The conversion efficiency depends on the concentration of the phosphor and the thickness of the wavelength conversion material 14 measured relative to the emitting surface 13 of the optoelectronic semiconductor chip 12. Wavelength conversion material 14 may, for example, have a thickness greater than that of the optoelectronic semiconductor chip 12. Therefore, different thicknesses of wavelength conversion material 14 are possible. However, wavelength conversion material 14 may also be omitted.

[0054] Furthermore, an electrical top contact pad 15 is disposed on the emitting surface 13 of the optoelectronic semiconductor chip 12. The top contact pad 15 is connected to the second upper contact pad 6 by means of a bonding wire 16. The bonding wire 16 comprises, for example, gold. The bonding wire 16 is embedded in an encapsulation 17. The encapsulation 17 comprises a dielectric material, such as silicone, silicon dioxide, titanium dioxide, or aluminum oxide. Therefore, the encapsulation 17 can be soft or hard (hard casting). In order to embed the bonding wire 16, the encapsulation 17 is partially disposed on the top side 3 of the substrate 2 and partially disposed on the emitting surface 13 of the optoelectronic semiconductor chip 12. As a result, the optoelectronic semiconductor chip 12 is at least partially embedded in the encapsulation 17. However, the wavelength conversion material 14 is not embedded in the encapsulation 17.

[0055] The encapsulation 17 is also arranged on the top side 3 of the substrate 2 in such a way that the first upper contact pad 5 and the second upper contact pad 6 are each partially embedded in the encapsulation 17 and at least partially exposed. This enables the optoelectronic arrangement 1 to make electrical contacts, such as electrical contacts with an IC. However, the top contact pad 15, the bonding line 16, and the encapsulation 17 can also be omitted.

[0056] The optoelectronic semiconductor chip 12 includes a rectangular cross-section parallel to the substrate 2. The optoelectronic semiconductor chip 12 includes sidewalls 18 extending perpendicular to the emitting surface 13 and perpendicular to the top side 3 of the substrate 2. The optoelectronic semiconductor chip 12 is disposed at the top side 3 of the substrate 2 such that the three sidewalls 18 are flush with the three sides 19 of the substrate 2. In other words, neglecting tolerances, the lateral distance between the optoelectronic semiconductor chip 12 and the sides 19 in three directions parallel to the substrate 2 is zero. In other embodiments, the three side surfaces 18 are not formed to be completely flush with the substrate edge 19. However, it is advantageous to choose the distance as small as possible to achieve the maximum light-emitting area relative to the base area of ​​the optoelectronic arrangement 1. Alternatively, the optoelectronic semiconductor chip 12 is arranged such that it protrudes beyond the three sides 19 of the substrate 2. In other embodiments, the optoelectronic semiconductor chip 12 may be arranged such that at least two sidewalls 18 are flush with or protrude beyond the sides 19 of the substrate 2.

[0057] Since the optoelectronic semiconductor chip 12 is arranged at the first upper contact pad 5, and the upper contact pads 5 and 6 are arranged laterally adjacent to each other, and the three sidewalls 18 of the optoelectronic semiconductor chip 12 are flush with the three sides 19 of the substrate 2, the optoelectronic arrangement 1 includes a non-light-emitting strip 20. The area of ​​the non-light-emitting strip 20 is mainly given by the total area of ​​the following parts: the section of the first upper contact pad 5 not covered by the optoelectronic semiconductor chip 12, the second upper contact pad 6, and the area formed between the first upper contact pad 5 and the second upper contact pad 6.

[0058] Figure 2 The optoelectronic arrangement 1 according to another embodiment is schematically shown in top view and cross-sectional side view. Figure 2 Photoelectronic arrangement 1 and according to Figure 1 The optoelectronic arrangement 1 has similarities. Only the differences are described below. Similar or identical elements are retained by the reference numerals.

[0059] As an example, Figure 2 The wavelength conversion material of the optoelectronic arrangement 1 is more than Figure 1 The wavelength conversion material 14 of the optoelectronic arrangement 1 is thicker, specifically thicker than the optoelectronic semiconductor chip 12. Therefore, the conversion efficiency can be improved.

[0060] In addition, with Figure 1Compared to the previous implementation, the first upper contact pad 5 and the second upper contact pad 6 are completely embedded in the encapsulation 17. The encapsulation 17 extends beyond the entire non-emitting edge 20 of the optoelectronic arrangement 1. The wavelength conversion material 14 is flush with the encapsulation 17 on the side facing away from the top side 3 of the substrate 2. This is not necessary, but it has the advantage of a flat top side of the optoelectronic arrangement 1, on which, for example, fewer dust particles can accumulate.

[0061] Figure 3a The optoelectronic arrangement 1 according to another embodiment is schematically shown in top view and cross-sectional side view. Figure 3a Photoelectronic arrangement 1 and according to Figure 2 The optoelectronic arrangement 1 has similarities. Only the differences are described below. Similar or identical elements are retained by the reference numerals.

[0062] and Figure 2 Compared to the implementation method, according to Figure 3a In addition to the permanent encapsulation 17, the optoelectronic arrangement 1 also includes a temporary encapsulation 21. The temporary encapsulation 21 comprises two separate sections disposed on the first upper contact pad 5 and the second upper contact pad 6, respectively, and extends through the encapsulation 17 perpendicularly to the top side 3 of the substrate 2 from the first upper contact pad 5 and the second upper contact pad 6. The temporary encapsulation 21 is removable. For example, the temporary encapsulation 21 can be dissolved or etched, while the encapsulation 17 remains.

[0063] Figure 3b The optoelectronic arrangement 1 according to another embodiment is schematically shown in top view and cross-sectional side view. Figure 3b Photoelectronic arrangement 1 and according to Figure 3a The optoelectronic arrangement 1 has similarities. Only the differences are described below. Similar or identical elements are retained by the reference numerals.

[0064] Removing the temporary encapsulation 21 allows the first upper contact pad 5 and the second upper contact pad 6 to make electrical contact. Therefore, Figure 3b The optoelectronic arrangement 1 includes additional contacts 22 disposed within the cavity of the remaining encapsulation 17 after the temporary encapsulation 21 is removed. The additional contacts 22 may, for example, comprise silicon, copper, or aluminum. The additional contacts 22 are exposed on the surface of the encapsulation 17 facing away from the top side 3 of the substrate 2 to achieve electrical contactability. In this case, the first upper contact pad 5 and the second upper contact pad 6 are fully embedded in the encapsulation 17 because they do not need to make contact in the region of the top side 3 of the substrate 2, but rather at the exposed portion of the additional contacts 22.

[0065] Figure 3c The optoelectronic arrangement 1 according to another embodiment is schematically shown in top view and cross-sectional side view. Figure 3c Photoelectronic arrangement 1 and according to Figure 3b The optoelectronic arrangement 1 has similarities. Only the differences are described below. Similar or identical elements are retained by the reference numerals.

[0066] Figure 3c The optoelectronic arrangement 1 has no lower contact pads 8 and 9 and no electrical vias 11. Instead, a bonding layer 43 is disposed on the bottom side 4, and the bonding layer 43 can be conductive or insulating. The bonding layer 43 can, for example, include metal. The bonding layer 43 can also be designed as an adhesive. Figure 3c The optoelectronic arrangement 1 can be disposed on a carrier. The material of the bonding layer 43 can be selected depending on the method of connecting the optoelectronic arrangement 1 to the carrier. The bonding layer 43 can be designed, for example, as an interface adhesive.

[0067] Figure 4 A top view schematically illustrates an optoelectronic arrangement 1 according to another embodiment. Figure 4 Photoelectronic arrangement 1 and according to Figure 1 The optoelectronic arrangement 1 has similarities. Only the differences are described below. Similar or identical elements are retained by the reference numerals.

[0068] Figure 4 The optoelectronic arrangement of the optoelectronic semiconductor chip 12 is pixelated, including a plurality of emitting surfaces 13 on the top side 3 away from the substrate 2. Exemplarily, the optoelectronic semiconductor chip 12 includes two sub-pixels 23, meaning the optoelectronic semiconductor chip 12 includes two separate emitting surfaces 13 formed laterally adjacent to each other. As an example, the sub-pixels 23 are connected in series with each other. In this case, the optoelectronic arrangement includes a third upper contact pad 7 disposed on the top side 3 of the substrate 2. Furthermore, if lower contact pads 8 and 9 are provided, a third lower contact pad electrically connected to the third upper contact pad 7 can be disposed at the bottom side 4 of the substrate 2.

[0069] Figure 5 The optoelectronic component 25 is schematically shown in a cross-sectional side view and a top view. The optoelectronic component 25 includes multiple components according to... Figure 1 The optoelectronic arrangement 1 and additional components. However, the optoelectronic component 25 may also include, according to... Figures 2 to 4 The optoelectronic arrangement 1 is another embodiment of the present invention. Reference numerals previously used will be retained in the following description.

[0070] The optoelectronic arrangements 1 are arranged laterally adjacent to each other, such that the substrates 2 are parallel to each other. The optoelectronic arrangements 1 are mechanically connected to each other by frames 26, which are arranged between the side surfaces 19 of the substrates 2 of the adjacent optoelectronic arrangements 1 and extend between the bottom side 4 and the top side 3 of the substrates 2. The frames 26 may also protrude beyond the bottom side 4 and / or the top side 3 of the substrates 2. Figure 5An exemplary embodiment is shown in which the frame 26 protrudes slightly beyond the bottom side 4 of the substrate 2. However, if lower contact pads 8, 9 are provided, the frame 26 should not cover the first and second upper contact pads 5, 6 and the lower contact pads 8, 9.

[0071] Frame 26 can be designed as a hard casting, but this is not necessary. Frame 26 may include silicone, silicon dioxide, titanium dioxide, or aluminum oxide. Frame 26 may also include any other suitable material to provide a permanent bonded connection between the sides 19 of the substrate of the adjacent optoelectronic arrangement 1.

[0072] Therefore, the optoelectronic component 25 is formed as a module comprising multiple pixels, each optoelectronic arrangement 1 optionally having sub-pixels arranged adjacent to each other. By arranging the optoelectronic arrangements 1 adjacent to each other with high precision during module manufacturing, a small lateral distance between adjacent emitting surfaces 13 can be achieved.

[0073] Furthermore, the optoelectronic arrangement 1 includes non-emitting strips 20. Therefore, the optoelectronic arrangement 1 / module can be referred to as frameless pixels. The module can be used to fabricate even larger arrays on a carrier, including small distances between pixels. Due to the frameless pixels, small distances between emitting surfaces 13 can be achieved in two dimensions. During the fabrication of larger arrays using multiple permanently connected optoelectronic arrangements 1, the technical equipment for arranging pixels with small distances between them is not required, as these are already implemented in the module. Thus, arrays with uniform emission characteristics and high contrast can be provided in a simple and cost-effective manner.

[0074] Furthermore, the optoelectronic component 25 includes a stabilizing layer 27 disposed on the emitting surface 13 of the optoelectronic semiconductor chip 12. In an embodiment where the wavelength conversion material 14 is disposed on the emitting surface 13 of the optoelectronic semiconductor chip 12, the stabilizing layer 27 is disposed on the surface of the wavelength conversion material 14 away from the emitting surface 13 of the optoelectronic semiconductor chip 12.

[0075] Exemplarily, the stabilizing layer 27 is designed as an adhesive tape 27. The tape 27 includes plastic 28 and adhesive 29, wherein the tape 27 is arranged such that the adhesive 29 faces the emitting surface 13 of the photoelectronic arrangement 1, and the plastic 28 faces away from the emitting surface 13 of the photoelectronic arrangement 1. The tape 27 may include Kapton, but may include any other suitable material. Furthermore, the stabilizing layer 27 may be designed as a hard casting, including silicon dioxide, silicone, or alumina, along with the adhesive 29. The stabilizing layer 27 provides additional mechanical stability in addition to the frame 26, especially when designed as a hard casting. However, the stabilizing layer 27 may also be omitted.

[0076] Figure 6A top view and a cross-sectional side view along the plane indicated in the top view schematically illustrate an optoelectronic component 25 according to another embodiment. Again, as an example, the optoelectronic component 25 includes a plurality of components according to... Figure 1 The optoelectronic arrangement 1 and additional components.

[0077] The optoelectronic component 25 includes a carrier 30 and at least one module of the connected optoelectronic arrangement 1. The module and at least one integrated circuit 31 (IC) are arranged on the carrier 30 and electrically connected to each other. The carrier 30 may be formed as a heat sink and may include, for example, metal. Alternatively, the carrier 30 may also be designed as a printed circuit board (PCB). The module of the optoelectronic arrangement 1, mechanically connected by a frame 26, is fixed to the carrier 30 by an interface adhesive 32, wherein the bottom side 4 of the substrate 2 of the optoelectronic arrangement 1 faces the carrier 30, and the emitting surface 13 faces away from the carrier 30. The interface adhesive 32 is disposed between the carrier 30 and the bottom side 4 of the substrate 2.

[0078] Exemplarily, two integrated circuits 31 are provided for each optoelectronic arrangement 1. The integrated circuit 31 can be designed as a driver. Alternatively or additionally, the IC includes a bus system. The IC 31 is disposed on a carrier 30 next to the module of the optoelectronic arrangement 1. As an example, the IC 31 is disposed on a secondary electronics board 33, which is fixed to the carrier 30 by an interface adhesive 32. The secondary electronics board 33 includes additional contact pads 34 for contacting the IC 31. Exemplarily, two additional contact pads 34 are provided for each IC 31. The first upper contact pad 5 and the second upper contact pad 6 of the optoelectronic arrangement 1 are respectively connected to the other contact pads 34 via additional bonding lines 35. However, the secondary electronics board 33 can be omitted. In this case, the additional contact pads 34 can be provided together with the carrier 30. Furthermore, any number of ICs 31 can be provided for any number of optoelectronic arrangements 1. The number of additional contact pads 34 can be selected based on the number of upper contact pads 5, 6.

[0079] Figure 7 The manufacturing process is illustrated schematically. Figure 5 Method steps for the optoelectronic component 25. Retain previously used reference numerals.

[0080] In the first method step, a plurality of individual optoelectronic arrangements 1 are provided. In the second method step, the optoelectronic arrangements 1 are arranged laterally adjacent to each other on a temporary carrier 36, such as a Kapton foil or another suitable temporary carrier 36. The optoelectronic arrangements 1 are arranged such that the substrates 2 of the optoelectronic arrangements 1 are parallel to each other.

[0081] In the third method step, the optoelectronic arrangements 1 are mechanically connected to each other by arranging frame material 37 on a temporary carrier 36 between the side surfaces 19 of the substrates 2 of adjacent optoelectronic arrangements 1 and between the bottom side 4 and the top side 3 of the substrates 2. Figure 7 As depicted, the frame material 37 can be disposed on the temporary carrier 36. In the fourth method step, the temporary carrier 36 is removed.

[0082] Before placing the optoelectronic arrangement 1 on the temporary carrier 36, the operation of each optoelectronic arrangement 1 can be tested to avoid yield loss. After connecting the optoelectronic arrangement 1 by placing the frame material 37, a stabilizing layer 27 can be placed on the emitting surface 13 of the optoelectronic semiconductor chip 12, but this is not necessary. At least one module of the connected optoelectronic arrangement 1 can be placed on the carrier 30 and connected to at least one integrated circuit 31. The stabilizing layer 27 can be removed before connecting at least one module to at least one IC 31. Therefore, the stabilizing layer 27 provides additional mechanical stability until the optoelectronic arrangement 1 permanently connected by the frame 26 is placed on the carrier 30.

[0083] The invention has been described and illustrated in detail with reference to preferred exemplary embodiments. However, the invention is not limited to the disclosed examples. Rather, those skilled in the art can derive other variations therefrom without departing from the scope of the invention.

[0084] Figure Labels

[0085] 1. Optoelectronic Arrangement

[0086] 2 substrate

[0087] 3. Top side of the substrate

[0088] 4. Bottom side of the substrate

[0089] 5 First upper contact pad

[0090] 6 Second upper contact pad

[0091] 7 Third upper contact pad

[0092] 8 First contact pad

[0093] 9 Second contact pad

[0094] 11 Electrical vias

[0095] 12 Optoelectronic Semiconductor Chips

[0096] 13. Emitter surface of optoelectronic semiconductor chip

[0097] 14 Wavelength conversion materials

[0098] 15 Top contact pads

[0099] 16. Joint line

[0100] 17 packages

[0101] 18. Sidewalls of optoelectronic semiconductor chips

[0102] 19. Side of the substrate

[0103] 20 Non-emitting strips arranged in a photoelectro-optical configuration

[0104] 21 Temporary packaging

[0105] 22 Additional Contacts

[0106] 23. Subpixels arranged in a photoelectronic manner

[0107] 24 Solder

[0108] 25 Optoelectronic Components

[0109] 26 Frames

[0110] 27. Stable Layer

[0111] 28 Plastic

[0112] 29 Adhesives

[0113] 30 carriers

[0114] 31 Integrated Circuits

[0115] 32 Interface adhesives

[0116] 33 Secondary Electronic Board

[0117] 34 Other contact pads

[0118] 35 Other joint lines

[0119] 36 Temporary carrier

[0120] 37. Frame Materials

Claims

1. An optoelectronic component (25), Includes multiple optoelectronic arrangements (1), wherein, Each optoelectronic arrangement (1) includes a substrate (2) and an optoelectronic semiconductor chip (12), the substrate (2) having a top side (3), a bottom side (4) away from the top side (3) and a side surface (19) extending between the top side (3) and the bottom side (4), the optoelectronic semiconductor chip (12) being disposed at the top side (3) of the substrate (2) and being designed to emit electromagnetic radiation at an emitting surface (12) away from the top side of the substrate (2); The optoelectronic arrangement (1) is arranged to be laterally adjacent to each other, such that the substrates (2) of the optoelectronic arrangement (1) are parallel to each other; The optoelectronic arrangement (1) is mechanically connected to each other by a frame (26) arranged between the sides (19) of the substrate (2) of the adjacent optoelectronic arrangement (1) and extending between the bottom side (4) and the top side (3) of the substrate (2).

2. The optoelectronic component (25) according to claim 1, wherein, Wavelength conversion material (14) is arranged on the emitting surface (14) of the optoelectronic semiconductor chip (12).

3. The optoelectronic component (25) according to claim 1 or 2, wherein, The stabilizing layer (27) is disposed on the emitting surface (13) of the optoelectronic semiconductor chip (12), or on the surface of the wavelength conversion material (14) away from the emitting surface (13) of the optoelectronic semiconductor chip (12).

4. The optoelectronic component (25) according to any one of the preceding claims. in, The optoelectronic semiconductor chip (12) includes a mounting surface facing the top side (3) of the substrate (2) and a sidewall surface (18) extending between the mounting surface and the emitting surface (13). The optoelectronic semiconductor chip (12) is arranged on the top side (3) of the substrate (2) such that the three sidewalls (18) of each optoelectronic semiconductor chip (12) are flush with the three sides (19) of the substrate (2), or the optoelectronic semiconductor chip (12) protrudes beyond the three sides (19) of the substrate (2).

5. The optoelectronic component (25) according to claim 4. in, Each of the substrates (2) includes a side (19) away from the optoelectronic semiconductor chip (12). The lateral distance between the emitting surfaces (13) of the photoelectric semiconductor chips (12) of the adjacent photoelectric semiconductor arrangement (1) is less than the distance between the photoelectric semiconductor chip (12) and the side (19) of the substrate (2) away from the photoelectric semiconductor chip (12), and in particular, less than 10% of the distance between the photoelectric semiconductor chip (12) and the side (19) away from the photoelectric semiconductor chip (12).

6. The optoelectronic component (25) according to any one of the preceding claims. in, A first upper contact pad (5) and a second upper contact pad (6) are respectively arranged at each top side (3) of the substrate (2); The optoelectronic semiconductor chip (12) is respectively arranged at the first upper contact pad (5) and electrically connected to the first upper contact pad (5).

7. The optoelectronic component (25) according to claim 6. in, Each of the optoelectronic semiconductor chips (12) includes a top contact pad (15) disposed on the emitting surface (13). The top contact pad (15) is connected to the second upper contact pad (6) via a bonding line (16).

8. The optoelectronic component (25) according to any one of the preceding claims. in, The bonding line (16) is embedded in the encapsulation (17).

9. The optoelectronic component (25) according to any one of the preceding claims. in, The optoelectronic semiconductor chip (12) is pixelated, each including a plurality of emitting surfaces (13) on the top side (3) away from the substrate (2).

10. The optoelectronic component (25) according to any one of the preceding claims. Includes at least one module comprising a carrier (30) and a mechanically connected optoelectronic arrangement (1), in, The module and at least one integrated circuit (31) are arranged on the carrier (30) and electrically connected to each other.

11. A method for manufacturing an optoelectronic component (25), comprising the following steps: - Provides multiple separate optoelectronic arrangements (1). in, Each optoelectronic arrangement (1) includes a substrate (2) and an optoelectronic semiconductor chip (12), the substrate (2) having a top side (3), a bottom side (4) away from the top side (3) and a side surface (19) extending between the top side (3) and the bottom side (4), the optoelectronic semiconductor chip (12) being disposed at the top side (3) of the substrate (2) and being designed to emit electromagnetic radiation at an emitting surface (13) away from the top side (3) of the substrate (2); - The optoelectronic arrangement (1) is arranged laterally adjacent to each other on a temporary carrier (36) such that the substrates (2) of the optoelectronic arrangement (1) are parallel to each other; - The optoelectronic arrangements (1) are mechanically connected to each other by arranging frame material (37) on the temporary carrier (36) between the side surfaces (19) of the substrates (2) of adjacent optoelectronic arrangements (1) and between the bottom side (4) and top side (3) of the substrates (2). - Remove the temporary carrier (36).

12. The method of claim 11, further comprising the following additional method steps prior to arranging the optoelectronic arrangement (12) on the temporary carrier (36): - Test the operation of each photoelectronic arrangement (1).

13. The method according to claim 11 or 12, comprising the following additional method steps after connecting the optoelectronic arrangement (1): - A stabilizing layer (27) is arranged on the emitting surface (13) of the optoelectronic semiconductor chip (12).

14. The method according to any one of claims 11 to 13, comprising the following additional method steps: - Arrange at least one module of the connected optoelectronic arrangement on the carrier (30); - Connect the module electrically to at least one integrated circuit (31).

15. The method according to any one of claims 11 to 14, in, The frame material (37) is disposed between the substrate (2) of the optoelectronic arrangement (1).

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