Solar cells, photovoltaic modules, photovoltaic systems, electric devices and power generation devices

Abstract

The application provides a solar cell, a photovoltaic module, a photovoltaic system, a power consumption device and a power generation device. The solar cell comprises a silver bismuth sulfide mineral type material. The solar cell comprising the silver bismuth sulfide mineral type material has good device stability in a long-term working process and provides good photoelectric conversion efficiency because the silver bismuth sulfide mineral type material has good thermal stability.

Description

Solar cell, photovoltaic module, photovoltaic system, power consuming device and power generating device TECHNICAL FIELD

[0001] The present application relates to the field of photovoltaic technology, in particular to a solar cell, a photovoltaic module, a photovoltaic system, a power consuming device and a power generating device. BACKGROUND

[0002] A solar cell is an electronic device that can directly convert light energy into electrical energy. The main working principle of a solar cell is the photovoltaic effect, that is, when sunlight or other light sources irradiate the semiconductor material of the solar cell, the energy of the photons is absorbed by the semiconductor to excite electron-hole pairs. Under the action of the electric field inside the semiconductor, the electrons and holes move in different directions, thereby forming a potential difference between the two ends of the device, and when an external circuit is connected, an electric current can be generated.

[0003] At present, the solar cell has the problem of poor device stability.

[0004] SUMMARY

[0005] In order to achieve the above-mentioned purpose, the first aspect of the present application provides a solar cell containing a silver bismuth sulfide mineral type material, which has good thermal stability, so that the solar cell has good device stability during long-term operation and provides good photoelectric conversion efficiency.

[0006] In addition, a photovoltaic module, a photovoltaic system, a power consuming device and a power generating device are also provided.

[0007] In order to achieve the above-mentioned purpose, the first aspect of the present application provides a solar cell, which comprises a silver bismuth sulfide mineral type material.

[0008] The perovskite material is prone to decomposition due to thermal instability, light influence and chemical instability, etc., so the perovskite material has the problem of poor stability, which further affects the photoelectric conversion efficiency of the perovskite solar cell. For example, the crystal structure of the perovskite material is prone to change, leading to decomposition, which destroys the structural integrity of the perovskite material and reduces its stability. Specifically, the narrow-band-gap perovskite material generally contains tin lead elements, on the one hand, the valence of tin element is divalent, the divalent tin ion is unstable and is easily oxidized, on the other hand, the tin lead crystallization rate is not matched, leading to the problem of unstable structure of the narrow-band-gap perovskite material. And the wide-band-gap perovskite material, for example, the perovskite material with a band gap of 1.77eV, generally contains two different halogen elements, for example, contains I and Br, which is prone to separation of I phase and Br phase, leading to the problem of unstable structure of the wide-band-gap perovskite material.

[0009] Silver bismuth sulfide mineral type material is a kind of semiconductor material, which has light absorption and high light absorption coefficient, and can be used as a photosensitive material to absorb light energy. The silver bismuth sulfide mineral type material has good thermal stability because its structure is different from that of perovskite material, and it does not have the problems of perovskite material, such as easy oxidation, mismatched tin and lead crystallization rate, and easy separation of two different halogen elements. Therefore, by applying silver bismuth sulfide mineral type material to solar cells, the solar cells containing silver bismuth sulfide mineral type material have good device stability and provide good photoelectric conversion efficiency during long-term operation due to the good thermal stability of silver bismuth sulfide mineral type material.

[0010] In some embodiments, the silver bismuth sulfide mineral type material includes one or more of cubic rock salt phase and hexagonal phase.

[0011] In some embodiments, the silver bismuth sulfide mineral type material has a grain size of ≥10 nm, optionally 10 nm-10 μm, more optionally 10 nm-500 nm or 50 nm-200 nm.

[0012] In some embodiments, the silver bismuth sulfide mineral type material includes one or both of polycrystal and single crystal.

[0013] Polycrystal refers to a crystal particle with a grain boundary, which is the boundary area between different crystal grains in a polycrystalline material. Single crystal refers to a crystal formed by long-range ordered arrangement of structural units in three-dimensional space. Polycrystal refers to a material composed of multiple crystal grains, and each crystal grain is a crystalline body formed by ordered arrangement of atoms or molecules. The crystal lattice of each crystal grain is periodically arranged, but the orientation of these crystal grains is random. The orientations of the crystal grains are different, so there is a grain boundary between the crystal particles. Single crystal has an ordered and regular structure due to the internal atomic arrangement, and the atomic arrangement in each direction is consistent, so it does not have a grain boundary.

[0014] In some embodiments, the silver bismuth sulfide mineral type material has a band gap of 0.8 eV-1.4 eV, optionally 0.8 eV-1.2 eV, more optionally 0.9 eV-1.1 eV.

[0015] In some embodiments, the solar cell includes:

[0016] a first electrode;

[0017] a second electrode;

[0018] and the silver bismuth sulfide mineral type material disposed between the first electrode and the second electrode.

[0019] In some embodiments, the solar cell includes:

[0020] a first electrode;

[0021] a second electrode;

[0022] and a light-absorbing layer disposed between the first electrode and the second electrode, the light-absorbing layer comprising the silver bismuth sulfide mineral type material.

[0023] In some embodiments, the solar cell comprises a thin film comprising the silver bismuth sulfide mineral type material.

[0024] In some embodiments, the light-emitting layer or the thin film comprising the silver bismuth sulfide mineral type material has a thickness of 10 nm to 20 μm, optionally 10 nm to 10 μm, more optionally 30 nm to 500 nm or 50 nm to 200 nm.

[0025] In some embodiments, the solar cell further comprises one or both of a first charge transport layer and a second charge transport layer;

[0026] the first charge transport layer is located between the first electrode and the light-absorbing layer;

[0027] the second charge transport layer is located between the second electrode and the light-absorbing layer;

[0028] wherein one of the first charge transport layer and the second charge transport layer is an electron transport layer and the other is a hole transport layer.

[0029] In some embodiments, the electron transport layer comprises one or more of the following materials and derivatives, dopants and passivated versions of the materials:

[0030] [6,6]-phenyl C61 butyric acid methyl ester, fullerene C61, [6,6]-phenyl C71 butyric acid methyl ester, fullerene C60, fullerene C70, tin dioxide, zinc oxide, perylene imide materials and naphthalene imide materials.

[0031] In some embodiments, the electron transport layer has a thickness of 1 nm to 300 nm, optionally 1 nm to 100 nm.

[0032] In some embodiments, the hole transport layer comprises one or more of the following materials and derivatives, dopants and passivated versions of the materials:

[0033] Nickel oxide, molybdenum oxide, molybdenum sulfide, cuprous oxide, cuprous iodide, cuprous thiocyanate, 2,2',7,7'-tetrakis(N,N-p-methoxyphenylamine)-9,9'-spirobifluorene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, poly-3-hexylthiophene, methoxyphenylamine-fluoroformamidine, triphenylamine with a core of triptycene, 3,4-ethylenedioxythiophene-methoxyphenylamine, N-4-aniline carbazole-spirofluorene, polythiophene, and self-assembled monomolecular material.

[0034] In some embodiments, the hole transport layer has a thickness of 1 nm to 500 nm, optionally 1 nm to 300 nm or 1 nm to 100 nm.

[0035] In some embodiments, one or more of the following conditions is met:

[0036] (1) The solar cell further comprises a first passivation layer disposed on a side of the light absorbing layer facing the first electrode, optionally, the first passivation layer is disposed on at least a portion of a surface of the light absorbing layer facing the first electrode.

[0037] (2) The solar cell further comprises a second passivation layer disposed on a side of the light absorbing layer facing the second electrode, optionally, the second passivation layer is disposed on at least a portion of a surface of the light absorbing layer facing the second electrode.

[0038] The first passivation layer can be used to passivate defects on at least a portion of a surface of the light absorbing layer facing the first electrode, thereby improving the stability and light absorption efficiency of the light absorbing layer. The second passivation layer can be used to passivate defects on at least a portion of a surface of the light absorbing layer facing the second electrode, thereby improving the stability and light absorption efficiency of the light absorbing layer.

[0039] In some embodiments, one or more of the following conditions is met:

[0040] (1) The solar cell comprises a first passivation layer and a first charge transport layer, the first passivation layer is disposed between the first charge transport layer and the light absorbing layer.

[0041] (2) The solar cell comprises a second passivation layer and a second charge transport layer, the second passivation layer is disposed between the light absorbing layer and the second charge transport layer.

[0042] In some embodiments, the first passivation layer and the second passivation layer each independently has a thickness of 1 nm to 20 nm.

[0043] In some embodiments, the material in the first and / or second passivation layer is chemically bonded to anions or cations of the material of the light-absorbing layer.

[0044] In some embodiments, one or more of the following conditions are satisfied:

[0045] (1) the solar cell further comprises a first barrier layer, which is disposed between the first electrode and the light-absorbing layer;

[0046] (2) the solar cell further comprises a second barrier layer, which is disposed between the light-absorbing layer and the second electrode;

[0047] wherein one of the first and second barrier layers is an electron barrier layer and the other is a hole barrier layer.

[0048] In some embodiments, one or more of the following conditions are satisfied:

[0049] (1) the solar cell comprises a first barrier layer and a first charge transport layer, the first barrier layer is disposed between the first electrode and the first charge transport layer, and / or the first barrier layer is disposed between the first charge transport layer and the light-absorbing layer;

[0050] (2) the solar cell comprises a second barrier layer and a second charge transport layer, the second barrier layer is disposed between the second electrode and the second charge transport layer, and / or the second barrier layer is disposed between the light-absorbing layer and the second charge transport layer.

[0051] In some embodiments, one or more of the following conditions are satisfied:

[0052] (1) the solar cell comprises a first barrier layer and a first passivation layer, the first barrier layer is disposed between the first electrode and the first passivation layer;

[0053] (2) the solar cell comprises a second barrier layer and a second passivation layer, the second barrier layer is disposed between the second passivation layer and the second electrode.

[0054] A barrier layer is used to prevent the reverse transport of charge carriers (electrons or holes), thus avoiding the recombination of charge carriers, thereby improving the open-circuit voltage and photoelectric conversion efficiency of the cell.

[0055] In some embodiments, one or more of the following conditions are satisfied:

[0056] (1) the LUMO energy level of the material of the hole-blocking layer is lower than the conduction band minimum CBM of the material of the light-absorbing layer, and the HOMO energy level of the material of the hole-blocking layer is lower than the valence band maximum VBM of the material of the light-absorbing layer; optionally, the hole-blocking layer comprises one or more of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, SnO2, ZnO and cerium oxide;

[0057] (2) the LUMO energy level of the material of the electron-blocking layer is higher than the conduction band minimum CBM of the material of the light-absorbing layer, and the HOMO energy level of the material of the electron-blocking layer is higher than the valence band maximum VBM of the material of the light-absorbing layer; optionally, the electron-blocking layer comprises one or more of molybdenum oxide, vanadium oxide, LiF and Al2O3.

[0058] In some embodiments, the thickness of each of the first blocking layer and the second blocking layer is independently 0.5 nm to 50 nm.

[0059] In some embodiments, the solar cell comprises the first electrode, the first blocking layer, the first charge transport layer, the light-absorbing layer, the second charge transport layer, the second blocking layer and the second electrode arranged in a stack.

[0060] In some embodiments, the solar cell comprises the first electrode, the first blocking layer, the first charge transport layer, the first passivation layer, the light-absorbing layer, the second passivation layer, the second charge transport layer, the second blocking layer and the second electrode arranged in a stack.

[0061] In some embodiments, the material of each of the first electrode and the second electrode independently comprises one or more of an inorganic conductive material, an organic conductive material and an organic-inorganic hybrid conductive material.

[0062] In some embodiments, one or more of the following conditions are satisfied:

[0063] (1) the inorganic conductive material comprises one or more of a carbon material, a metal material and alloys thereof, and a transparent conductive metal oxide.

[0064] (2) the organic conductive material comprises one or more of polyacrylic acid, polyimide, polyaniline, polythiophene, polypyrrole and derivatives thereof.

[0065] In some embodiments, at least one of the first electrode and the second electrode is a light-transmitting electrode.

[0066] In some embodiments, the solar cell comprises the first electrode, the first charge transport layer, the light absorbing layer, the second charge transport layer, and the second electrode arranged in a stack, and the first electrode is a light transparent electrode.

[0067] wherein,

[0068] the first charge transport layer is an electron transport layer, and the second charge transport layer is a hole transport layer; or,

[0069] the first charge transport layer is a hole transport layer, and the second charge transport layer is an electron transport layer.

[0070] In some embodiments, the solar cell comprises the first electrode, a first blocking layer, a hole transport layer, the light absorbing layer, an electron transport layer, a second blocking layer, and the second electrode arranged in a stack, and the first electrode is a light transparent electrode.

[0071] In some embodiments, the solar cell comprises the first electrode, a first blocking layer, a hole transport layer, a first passivation layer, the light absorbing layer, a second passivation layer, an electron transport layer, a second blocking layer, and the second electrode arranged in a stack, and the first electrode is a light transparent electrode.

[0072] In some embodiments, the silver bismuth sulfide mineral type material has a chemical formula of MX, M is a cation, and X is an anion; optionally, X comprises one or more divalent anions; and optionally, M comprises one or more cations.

[0073] In some embodiments, the divalent anion comprises one or more of a divalent inorganic anion and a divalent organic anion.

[0074] In some embodiments, the divalent inorganic anion comprises one or more of O 2- , S 2- , Se 2- , and Te 2- ; and optionally, S 2- .

[0075] In some embodiments, M comprises one or more of a metal cation and an organic cation.

[0076] Optionally, the metal cation comprises Ag + , Li + , Na + , K + , Rb + , Cs + , Cu + , Ni 2+ , Cu2+ Zn 2+ Co 2+ Bi 3+ Ga 3+ In 3+ Sb 3+ Al 3+ Tl 3+ and Co 3+ ;

[0077] Optionally, the organic cation comprises at least one of an organic amine ion, formamidinium ion, and imidazolium-type ion.

[0078] In some embodiments, M comprises a first cation A and a second cation B that are different element species;

[0079] Optionally, the first cation A and the second cation B each independently comprise one or more of Ag + Li + Na + K + Rb + Cs + Cu + Ni 2+ Cu 2+ Zn 2+ Co 2+ Bi 3+ Ga 3+ In 3+ Sb 3+ Al 3+ Tl 3+ and Co 3+ ;

[0080] Optionally, the first cation A comprises one or more of Ag + Li + Na + K + Rb + and Cs + ;

[0081] Optionally, the second cation B comprises Bi 3+ .

[0082] In some embodiments, the silver bismuth sulfide type material comprises a compound of the formula A x B y X2, where x and y are such that the overall valence state of the compound A x B y X2is 0.

[0083] In some embodiments, the silver bismuth sulfide mineral type material comprises a compound of the formula ABX2, the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X is a divalent anion.

[0084] In some embodiments, the silver bismuth sulfide mineral type material comprises a compound of the formula ABX2, the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X is a divalent anion. x B y X’ z X” 2-z In some embodiments, the silver bismuth sulfide mineral type material comprises a compound of the formula ABX2, the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X is a divalent anion.

[0085] In some embodiments, the silver bismuth sulfide mineral type material comprises a compound of the formula ABX2, the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X is a divalent anion. z X” 2-z In some embodiments, the silver bismuth sulfide mineral type material comprises a compound of the formula ABX2, the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X is a divalent anion.

[0086] In some embodiments, one or more of the following conditions are satisfied:

[0087] (1) the element species of the divalent anion X’ and the divalent anion X” are different;

[0088] (2) X’ is S 2- , and z is not 0;

[0089] (3) X” is selected from one or more of O 2- , Se 2- , and Te 2- .

[0090] In some embodiments, the silver bismuth sulfide mineral type material comprises one or more of AgBiS2, AgBiS z O 2-z , AgBiS z Se 2-z , AgBiS z Te 2-z , wherein z is 0-2.

[0091] In a second aspect, the present application provides a photovoltaic module comprising the solar cell provided in the first aspect of the present application.

[0092] The photovoltaic module of the present application comprises the solar cell provided in the present application, and thus at least has the same advantages as the solar cell.

[0093] In a third aspect, the present application provides a photovoltaic system comprising one or more of the solar cell provided in the first aspect of the present application and the photovoltaic module provided in the second aspect of the present application.

[0094] The photovoltaic system of the present application comprises the solar cell provided by the present application, and thus has at least the same advantages as the solar cell.

[0095] In a fourth aspect, the present application provides a power consumption device comprising one or more of the solar cell provided by the first aspect of the present application and the photovoltaic module provided by the second aspect of the present application.

[0096] The power consumption device of the present application comprises the solar cell provided by the present application, and thus has at least the same advantages as the solar cell.

[0097] In a fifth aspect, the present application provides a power generation device comprising one or more of the solar cell provided by the first aspect of the present application and the photovoltaic module provided by the second aspect of the present application.

[0098] The power generation device of the present application comprises the solar cell provided by the present application, and thus has at least the same advantages as the solar cell.

[0099] The details of one or more embodiments of the present application are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the present application will be apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF DRAWINGS

[0100] To better describe and illustrate the embodiments or examples provided by the present application, one or more drawings can be referred to. Additional details or examples used to describe the drawings should not be considered as limiting the scope of the disclosed application, the presently described embodiments or examples, and any one of the best modes of these applications presently understood. Moreover, the same reference numbers are used throughout the drawings to represent the same components. In the drawings:

[0101] FIG. 1 is a schematic diagram of a solar cell according to an embodiment of the present application.

[0102] FIG. 2 is a schematic diagram of a solar cell according to another embodiment of the present application.

[0103] FIG. 3 is a schematic diagram of a solar cell according to another embodiment of the present application.

[0104] FIG. 4 is a schematic diagram of a solar cell according to another embodiment of the present application.

[0105] FIG. 5 is a schematic diagram of a solar cell according to another embodiment of the present application.

[0106] FIG. 6 is a schematic diagram of a cross-section of a solar cell according to an embodiment of the present application, which is divided into a plurality of sub-cells.

[0107] FIG. 7 is a schematic diagram of a power consumption device using a solar cell according to an embodiment of the present application as a power source.

[0108] 10, solar cell; 100, light absorbing layer; 210, first electrode; 220, second electrode; 310, first charge transport layer; 320, second charge transport layer; 410, first passivation layer; 420, second passivation layer; 610, first blocking layer; 620, second blocking layer; 710, first charge injection layer; 720, second charge injection layer; 800, substrate;

[0109] P1, P1 channel; P2, P2 channel; P3, P3 channel; 11, active region; 12, dead region;

[0110] 20, electrical device. DETAILED DESCRIPTION

[0111] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without any creative effort fall within the scope of the present application.

[0112] The "range" disclosed in the present application can be defined in the form of lower limit and upper limit, a given range is defined by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of the particular range. The range defined in this way can be inclusive or exclusive of the end values, either end value can be independently included or excluded, and can be arbitrarily combined, i.e. any lower limit can be combined with any upper limit to form a range. For example, if the ranges of 60-120 and 80-110 are listed for a particular parameter, it is understood that the ranges of 60-110 and 80-120 are also contemplated. In addition, if the minimum range values of 1 and 2 are listed, and if the maximum range values of 3, 4 and 5 are also listed, the following ranges are all contemplated: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In the present application, unless otherwise specified, the numerical range "a-b" represents a shorthand notation for any integer combination of a to b, where a and b are both real numbers. For example, the numerical range "0-5" means that all the real numbers between "0-5" have been listed herein, and "0-5" is just a shorthand notation for these numerical combinations. In addition, when it is stated that a parameter is an integer ≥2, it is equivalent to disclose that the parameter is, for example, integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc. For example, when it is stated that a parameter is an integer selected from "2-10", it is equivalent to list the integers 2, 3, 4, 5, 6, 7, 8, 9 and 10.

[0113] In the present application, "a plurality of", "a plurality of kinds", and the like, if not otherwise specified, refer to a number greater than 2 or equal to 2. For example, "one or more" means one or a number greater than or equal to two.

[0114] If not otherwise specified, all the embodiments and optional embodiments of the present application can be combined with each other to form new technical solutions.

[0115] In the present application, the phrase "embodiments" means that the specific features, structures, or characteristics described in connection with the embodiments can be included in at least one embodiment or implementation of the present application. The appearance of this phrase at various places in the specification does not necessarily mean that the same embodiments are referred to, nor are the embodiments independent or alternative to each other. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments. The phrase "implementation" is similarly understood herein.

[0116] Those skilled in the art can understand that in the method of each embodiment or embodiment, the writing order of each step does not mean a strict execution order and does not constitute any limitation on the implementation process. The detailed execution order of each step should be determined by its function and possible internal logic. If not otherwise specified, all the steps of the present application can be performed sequentially or randomly, preferably sequentially. For example, the method comprises steps (a) and (b), which means that the method can comprise steps (a) and (b) performed sequentially, or steps (b) and (a) performed sequentially. For example, the method can further comprise step (c), which means that step (c) can be added to the method in any order, for example, the method can comprise steps (a), (b) and (c), or steps (a), (c) and (b), or steps (c), (a) and (b), etc.

[0117] In the present application, A (such as B) means that B is a non-limiting example of A, and it can be understood that A is not limited to B, unless otherwise specified.

[0118] In the present application, "optionally", "optional", "optional" means that it can or can not be present, that is, it means to select either of the two parallel schemes "have" or "not have". If there are multiple "optional" in a technical solution, if not otherwise specified, and there is no contradiction or mutual restriction, each "optional" is independent of each other.

[0119] The perovskite material is prone to decomposition due to thermal instability, light influence, and chemical instability, and thus has poor stability, which affects the photoelectric conversion efficiency of the perovskite solar cell. For example, the crystal structure of the perovskite material is prone to change, leading to decomposition and destroying the structural integrity of the perovskite material, thereby reducing the stability of the perovskite material. Specifically, the narrow-bandgap perovskite material generally contains tin and lead elements. On the one hand, the valence of the tin element is divalent, and the divalent tin ion is unstable and is easily oxidized. On the other hand, the crystallization rate of tin and lead is not matched, leading to the problem of structural instability of the narrow-bandgap perovskite material. The wide-bandgap perovskite material, for example, the perovskite material with a band gap of 1.77 eV, generally contains two different halogen elements, for example, I and Br. The I phase and the Br phase are prone to separation, leading to the problem of structural instability of the wide-bandgap perovskite material.

[0120] An embodiment of the present application provides a solar cell including a silver bismuth sulfide mineral type material.

[0121] The silver bismuth sulfide mineral type material is a kind of semiconductor material, which has light absorption and a high light absorption coefficient, and can be used as a photosensitive material to absorb light energy. The silver bismuth sulfide mineral type material has good thermal stability because its structure is different from that of the perovskite material, and it does not have the problems of easy oxidation of the perovskite material, mismatched crystallization rate of tin and lead, and easy separation of two different halogen elements. By applying the silver bismuth sulfide mineral type material to the solar cell, the solar cell containing the silver bismuth sulfide mineral type material has good device stability during long-term operation and provides good photoelectric conversion efficiency because the silver bismuth sulfide mineral type material has good thermal stability. In addition, compared with crystalline silicon materials, the silver bismuth sulfide mineral type material has the advantages of lower preparation process and preparation cost, and abundant raw material sources.

[0122] In some embodiments, the crystal form of the silver bismuth sulfide mineral type material includes one or more of a cubic rock salt phase crystal form and a hexagonal phase crystal form.

[0123] The cubic rock salt phase crystal form has a crystal space group The cubic rock salt phase crystal form belongs to the cubic crystal system, also known as the sodium chloride crystal structure.

[0124] The hexagonal crystal system has one 6-fold symmetry axis or 6-fold inversion axis, which is the vertical crystal axis C axis of the crystal. The other three horizontal crystal axes are at an angle of 120 degrees to each other. Among the axis angles α, β, and γ, α = β = 90°, and γ = 120°; among the axis lengths a, b, and c, a = b ≠ c.

[0125] In some embodiments, the silver bismuth sulfide mineral type material includes a cubic rock salt phase crystal form; further, the silver bismuth sulfide mineral type material is a cubic rock salt phase crystal form.

[0126] In some embodiments, the silver bismuth sulfide-type material in the cubic rock-salt phase has a chemical formula MX, where M is a cation and X is an anion.

[0127] Further, M can include one or more cations and X can include one or more anions. A and X occupy cation sites and anion sites, respectively, of a sodium chloride crystal structure, and are arranged in alternating spaces to form a face-centered cubic structure.

[0128] In some embodiments, X includes one or more divalent anions. Further, the divalent anion includes one or more of a divalent inorganic anion and a divalent organic anion.

[0129] Further, the divalent inorganic anion includes an oxygen group element, specifically one or more of O 2- , S 2- , Se 2- , and Te 2- . Optionally, the divalent inorganic anion includes S 2- .

[0130] In some embodiments, M includes one or more of a monovalent cation, a divalent cation, and a trivalent cation.

[0131] In some embodiments, M includes one or more of a metal cation and an organic cation. The valence of the metal cation and the organic cation can each independently be any one or any plurality of monovalent to trivalent.

[0132] Further, the metal cation includes one or more of Ag + , Li + , Na + , K + , Rb + , Cs + , Cu + , Ni 2+ , Cu 2+ , Zn 2+ , Co 2+ , Bi 3+ , Ga 3+ , In 3+ , Sb 3+ , Al 3+ , Tl 3+ , and Co 3+ . Optionally, the metal cation includes Li + , a sodium ion (Na + ), a potassium ion (K + ), a rubidium ion (Rb + ), a cesium ion (Cs + ), a silver ion (Ag +one or more of the group consisting of Ag + .

[0133] Further, the organic cation can include at least one of an organic amine ion, a formamidinium ion (HC(NH2)2 + , FA + , and an imidazolium ion; more optionally, the metal cation includes at least one of Li + , a sodium ion (Na + ), a potassium ion (K + ), a rubidium ion (Rb + ), a cesium ion (Cs + ). Further, the organic amine ion includes at least one of a methylamine ion (CH3NH3 + , MA + ), a dimethylammonium ion (MDA 2+ ), a phenethylammonium ion (PEA + ), an oleyl ammonium ion (OA + ), an ethylamine ion, a propylamine ion, a butylamine ion, a pentylamine ion, and a hexylamine ion.

[0134] wherein the imidazolium ion refers to an ion containing an imidazole group and the imidazole group carries a charge; as an example, it includes one or more of an imidazolium ion and a derivative ion of imidazole.

[0135] Further, M includes at least two cations, which are a first cation A and a second cation B, respectively. The first cation A and the second cation B are different in element species.

[0136] Further, the first cation A and the second cation B each independently include one or more of a metal cation and an organic cation, wherein the valence of the metal cation and the organic cation can be any one or any multiple of monovalence to trivalence.

[0137] Further, the first cation A and the second cation B each independently include a metal cation, and the two are different in element species.

[0138] Further, the first cation A and the second cation B each independently include Ag + , Li + , Na + , K + , Rb + , Cs + , Cu + , Ni 2+ , Cu 2+ , Zn 2+ , Co 2+ , Bi 3+ , Ga3+ In 3+ Sb 3+ Al 3+ Tl 3+ and Co 3+ , both element species being different.

[0139] Optionally, the first cation A comprises Ag + ; optionally, the second cation B comprises Bi 3+ .

[0140] In some embodiments, the silver bismuth sulfide type material comprises a compound of the formula A x B y X2. Here, x and y are values such that the compound A x B y X2is overall charge neutral. Further, x and y are values in the range of 0 to 4, as examples, 0, 0.1, 0.2, 0.3, 0.5, 0.6, 0.8, 1, 1.2, 1.4, 1.5, 1.6, 1.8, 2, 2.1, 2.5, 2.8, 3, 3.2, 3.4, 3.5, 3.6, 3.8, 4, or a range defined by any two of the above values as end points.

[0141] In some embodiments, X is a divalent anion, and x and y are values such that the compound A x B y X2is overall charge neutral. Further, the divalent anion comprises one or more of O 2- , S 2- , Se 2- , and Te 2- ; optionally, X comprises S 2- .

[0142] In some embodiments, the first cation A is a monovalent cation; optionally, the first cation comprises one or more of Ag + , Li + , Na + , K + , Rb + , Cs + , and Cu + .

[0143] In some embodiments, the second cation B is a trivalent cation; optionally, the second cation comprises one or more of Bi 3+ , Ga 3+ , In 3+ , Sb 3+ , Al 3+ , Tl 3+ .and Co 3+ one or more of O, S, Se, and Te.

[0144] In some embodiments, the silver bismuth sulfide mineral type material includes a compound with a chemical formula of ABX2, the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X is a divalent anion. The perovskite material generally contains tin element, and the valence of tin element is divalent. The divalent tin ion is unstable and is easily oxidized. Thus, the silver bismuth sulfide mineral type material with the chemical formula of ABX2 does not contain divalent cations, such as divalent tin ions, and thus is not easily oxidized and has good stability in an oxidizing environment.

[0145] Further, X includes one divalent anion or multiple divalent anions.

[0146] Further, X includes divalent anion X' and divalent anion X" that are different in element, and the chemical formula of the compound is A x B y X2, and the chemical formula of the compound is A x B y X' z X" 2-z , and z is 0-2. The value of z is any number in the range of 0 to 2, and as an example, can be 0, 0.1, 0.2, 0.3, 0.5, 0.6, 0.8, 1, 1.2, 1.4, 1.5, 1.6, 1.8, 2, or a range formed by any two of the above values as end values.

[0147] When z is 0, the divalent anion X' does not exist, and when z is 2, the divalent anion X" does not exist. When z is a value in the range of 0-2 that is not an end value, and the divalent anion X' and the divalent anion X" are different in element, it indicates that the two different divalent anions X' and X" exist at the same time. Further, X' is S 2- , and z is not 0. Further, X" is selected from one or more of O 2- , Se 2- , and Te 2- . Further, the chemical formula of the compound is A x B y X2, and the chemical formula of the compound is A x B y S z X" 2-z .

[0148] As an example, the chemical formula of the compound A x B y X2 includes but is not limited to A x B y S2, A x B y S z O2-z A x B y S z Se 2-z A x B y S z Te 2-z one or more of A, B, S, Se, and Te.

[0149] Further, the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X includes a divalent anion X' and a divalent anion X", then the chemical formula of the compound of ABX2is ABX' z X" 2-z , wherein z is 0-2. The value of z is any number in the range of 0 to 2, and as an example, can be 0, 0.1, 0.2, 0.3, 0.5, 0.6, 0.8, 1, 1.2, 1.4, 1.5, 1.6, 1.8, 2, or a range formed by any two of the above values as end values.

[0150] When z is 0, the divalent anion X' does not exist, and when z is 2, the divalent anion X" does not exist. When z is a value in the range of 0-2 that is not an end value, it means that both the divalent anion X' and the divalent anion X" exist. Further, X' is S 2- , and z is not 0. Further, X" is selected from one or more of O 2- , Se 2- , and Te 2- . Further, the chemical formula of the compound of ABX2is ABS z X" 2-z .

[0151] As an example, the chemical formula of the compound of ABX2includes but is not limited to one or more of AgBiS2, AgBiS z O 2-z , AgBiS z Se 2-z , AgBiS z Te 2-z .

[0152] Further, taking AgBiS2as an example, it includes one or more of a cubic rock salt phase crystal form and a hexagonal phase crystal form. Alternatively, the above solar cell includes AgBiS2in a cubic rock salt phase crystal form, and the AgBiS2in a cubic rock salt phase crystal form has the advantages of high absorption coefficient, suitable band gap, good charge transport performance, and good material stability.

[0153] The silver bismuth sulfide type material can be formed by a hydrothermal method, a solvothermal method, a chemical vapor deposition method (CVD), a precursor pyrolysis method, a sol-gel method, etc.

[0154] In some embodiments, the silver bismuth sulfide mineral type material is nanocrystal, for example quantum dot, with particle size of 2nm-10nm. However, synthesis of nanocrystal is complex, and there are a large number of surface traps on the surface of nanocrystal, which leads to low carrier transport rate and serious recombination, thereby restricting the charge extraction efficiency.

[0155] In some embodiments, the silver bismuth sulfide mineral type material has a grain size of ≥10nm, which can be selected from 10nm-10μm, for example 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1μm, 2μm, 3μm, 4μm, 5μm, 6μm, 7μm, 8μm, 9μm, 10μm, or a range formed by any two of the above values as end values.

[0156] Further, the silver bismuth sulfide mineral type material has a grain size of 10nm-5μm, or 500nm-5μm. Alternatively, the silver bismuth sulfide mineral type material has a grain size of 10nm-1μm, or 500nm-1μm. The silver bismuth sulfide mineral type material has a large grain size and small grain boundary, which can reduce the non-radiative recombination of electrons and holes at the grain boundary.

[0157] Further, the silver bismuth sulfide mineral type material has a grain size of 1μm-10μm. Alternatively, the silver bismuth sulfide mineral type material has a grain size of 5μm-10μm, or 1μm-5μm, or 4μm-6μm.

[0158] Further, the silver bismuth sulfide mineral type material has a grain size of 10nm-500nm, or 50nm-500nm. Alternatively, the silver bismuth sulfide mineral type material has a grain size of 10nm-400nm, or 50nm-400nm. Alternatively, the silver bismuth sulfide mineral type material has a grain size of 10nm-200nm, or 50nm-200nm. Alternatively, the silver bismuth sulfide mineral type material has a grain size of 10nm-100nm, or 50nm-100nm, or 10nm-50nm, or 50nm-90nm, or 60nm-90nm, or 60nm-80nm, or 60nm-70nm, or 50nm-60nm, or 20nm-50nm, or 20nm-40nm, or 20nm-35nm, or 25nm-35nm.

[0159] In some embodiments, the crystal structure of the a silver bismuth sulfide mineral type material includes one or both of polycrystalline and single crystal. Polycrystalline refers to a crystal particle with grain boundaries, which are the boundary regions between different grains in a polycrystalline material. Single crystal refers to a crystal formed by long-range ordered arrangement of structural units in three-dimensional space. Polycrystalline refers to a material composed of multiple grains, which are crystalline bodies formed by ordered arrangement of atoms or molecules. The lattice of each grain is periodically arranged, but the orientation of these grains is random. Because the orientations of the grains are different, there are grain boundaries between the crystal particles. Single crystal has ordered and regular structure due to the internal atomic arrangement, and the atomic arrangement in each direction is consistent, so there is no grain boundary.

[0160] In other words, the silver bismuth sulfide mineral type material includes one or both of polycrystalline silver bismuth sulfide mineral type material and single crystal silver bismuth sulfide mineral type material.

[0161] In some embodiments, the silver bismuth sulfide mineral type material has a band gap of 0.8 eV to 1.4 eV, optionally 0.8 eV to 1.2 eV, and more optionally 0.9 eV to 1.1 eV. For example, the silver bismuth sulfide mineral type material can have a band gap of 0.8 eV, 0.9 eV, 1 eV, 1.1 eV, 1.2 eV, 1.3 eV, 1.4 eV, or a range formed by any two of the above values as end values. The silver bismuth sulfide mineral type material has a band gap in the above range, which is a good narrow-band-gap light-absorbing material, and has the advantages of high absorption coefficient, suitable band gap, good charge transport performance, and good material stability. The thin film can achieve high current density in a small thickness range.

[0162] For example, in some embodiments, the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X is a divalent anion. The chemical formula is A x B y X2. The silver bismuth sulfide mineral type material with the chemical formula ABX2 does not contain divalent cations, such as divalent tin ions, and is therefore not easily oxidized, has good stability in an oxidizing environment, and does not have the problem of mismatched crystallization rates of tin and lead.

[0163] In some embodiments of the present application, the solar cell includes a thin film containing a silver bismuth sulfide mineral type material. Further, the thin film containing the silver bismuth sulfide mineral type material serves as a light-absorbing layer in the solar cell. In other words, the solar cell includes a light-absorbing layer, and further, the light-absorbing layer includes a silver bismuth sulfide mineral type material; further, the light-absorbing layer includes a thin film containing a silver bismuth sulfide mineral type material.

[0164] The term "layer" as used in this application refers to any substantially layer-like structure. A layer can have a thickness that varies over the extent of the layer. Typically, a layer has a thickness that is approximately constant. The "thickness" of a layer as used in this application refers to the average thickness of the layer. The thickness of a layer can be measured by methods conventional in the art. For example, a Zygo NewView 9000 model white light interferometer can be used.

[0165] Further, the solar cell includes a silver bismuth sulfide thin film, the silver bismuth sulfide thin film being a thin film containing the silver bismuth sulfide type material.

[0166] In some embodiments, the thin film containing the silver bismuth sulfide type material or the light absorbing layer has a thickness of 10 nm to 20 μm, for example, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, or a range defined by any two of the above values as end points.

[0167] Further, the thin film containing the silver bismuth sulfide type material or the light absorbing layer has a thickness of 10 nm to 10 μm, or 500 nm to 10 μm. Alternatively, the thin film containing the silver bismuth sulfide type material or the light absorbing layer has a thickness of 10 nm to 5 μm, or 500 nm to 5 μm.

[0168] Further, the thin film containing the silver bismuth sulfide type material or the light absorbing layer has a thickness of 1 μm to 20 μm. Alternatively, the thin film containing the silver bismuth sulfide type material or the light absorbing layer has a thickness of 5 μm to 20 μm.

[0169] Further, the thin film or light absorption layer containing the silver bismuth sulfide mineral type material has a thickness of 10 nm to 1000 nm, or 50 nm to 1000 nm. Alternatively, the thin film or light absorption layer containing the silver bismuth sulfide mineral type material has a thickness of 10 nm to 800 nm, or 50 nm to 800 nm. Alternatively, the thin film or light absorption layer containing the silver bismuth sulfide mineral type material has a thickness of 10 nm to 500 nm, 50 nm to 400 nm, or 20 nm to 500 nm. Alternatively, the thin film or light absorption layer containing the silver bismuth sulfide mineral type material has a thickness of 20 nm to 200 nm, 50 nm to 200 nm, or 100 nm to 200 nm, or 20 nm to 60 nm, or 30 nm to 60 nm, or 30 nm to 50 nm.

[0170] The silver bismuth sulfide mineral type material has a high light absorption coefficient, and a thin film thereof can achieve a high current density in a small thickness range.

[0171] In some embodiments, the solar cell includes a first electrode, a second electrode, and a silver bismuth sulfide mineral type material disposed between the first electrode and the second electrode.

[0172] In some embodiments, the solar cell includes a first electrode, a second electrode, and a thin film containing a silver bismuth sulfide mineral type material disposed between the first electrode and the second electrode.

[0173] Further, the thin film containing the silver bismuth sulfide mineral type material can serve as a light absorption layer in the solar cell.

[0174] In some embodiments, at least one of the first electrode and the second electrode is a light-transmitting electrode. Further, only one of the first electrode and the second electrode is a light-transmitting electrode, and the light-transmitting electrode serves as the incident side of the solar light. Further, both of the first electrode and the second electrode are light-transmitting electrodes, and both of the electrodes can serve as the incident side of the solar light. For example, the solar light can be incident from both sides, which is conducive to increasing the intensity of the solar light received by the solar cell.

[0175] The light-transmitting electrode refers to an electrode having light transmission for visible light. Further, the light-transmitting electrode has a light transmission rate for visible light of ≥ 50%, which can alternatively be ≥ 60%, or ≥ 70%, or ≥ 80%, or ≥ 90%. For example, the light transmission rate of the light-transmitting electrode for visible light can be 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100%, or a range formed by any two of the above values as end values. Further, the light transmission rate of the light-transmitting electrode for visible light can be 50% to 100%, which can alternatively be 60% to 80% or 80% to 100% or 80% to 95%.

[0176] In some embodiments, the solar cell further comprises one or both of a first charge transport layer and a second charge transport layer;

[0177] The first charge transport layer is located between the first electrode and the light absorbing layer;

[0178] The second charge transport layer is located between the second electrode and the light absorbing layer;

[0179] One of the first charge transport layer and the second charge transport layer is an electron transport layer, and the other is a hole transport layer.

[0180] In other words, in some embodiments, the solar cell comprises a first electrode, an optional first charge transport layer, a light absorbing layer, an optional second charge transport layer, and a second electrode, which are sequentially stacked. Further, the first electrode is formed on a substrate, in other words, the substrate is located on a side of the first electrode facing away from the light absorbing layer, and the same applies hereinafter.

[0181] Referring to FIG. 1, as an example, the solar cell 10 comprises a first electrode 210, a first charge transport layer 310, a light absorbing layer 100, a second charge transport layer 320, and a second electrode 220, which are sequentially stacked.

[0182] Further, the solar cell further comprises a substrate, and the first electrode is disposed on the substrate. The substrate can be made of glass, so that the substrate and the first electrode material form transparent conductive glass. The transparent conductive glass can be, for example, FTO (fluorine-doped tin oxide), ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), IZO (indium zinc oxide), and the like.

[0183] Referring to FIG. 1, as an example, the solar cell 10 comprises a first electrode 210, a first charge transport layer 310, a light absorbing layer 100, a second charge transport layer 320, and a second electrode 220, which are sequentially stacked.

[0184] It can be understood that the solar cell can include a forward structure and a reverse structure in terms of structure.

[0185] Further, the first electrode is a light-transmitting electrode, and the solar cell has a forward structure, which comprises a first electrode, an electron transport layer, a light absorbing layer, a hole transport layer, and a second electrode, which are sequentially stacked.

[0186] As an example of the formal structure of a solar cell, referring to FIG. 1, the solar cell 10 includes a substrate 800, a first electrode 210, a first charge transport layer 310, a light absorbing layer 100, a second charge transport layer 320, and a second electrode 220, which are sequentially stacked; at this time, the substrate 800 and the first electrode 210 are both light-transmissive materials, the first charge transport layer 310 is an electron transport layer, and the second charge transport layer 320 is a hole transport layer.

[0187] Further, the first electrode is a light-transmissive electrode, and the inverse structure of the solar cell includes a first electrode, a hole transport layer, a light absorbing layer, an electron transport layer, and a second electrode, which are sequentially stacked. Since the first electrode is a light-transmissive electrode, it serves as the solar light incident side, and the film layer located near the solar light incident side of the light absorbing layer in the inverse structure is the hole transport layer. Therefore, the side of the light absorbing layer near the hole transport layer generates a large number of holes due to the photovoltaic effect, which can make the hole concentration in the hole transport layer high. Since the hole transport rate is slower than the electron transport rate, the hole transport layer is disposed near the solar light incident side, and the holes generated on the side of the light absorbing layer near the hole transport layer do not need to cross the entire light absorbing layer, thus shortening the transport path, which is thus beneficial to improving the hole collection rate. In addition, since the hole transport rate is slower than the electron transport rate, the inverse structure is beneficial to improving the rate matching of the hole transport rate and the electron transport rate.

[0188] As an example of the inverse structure of a solar cell, referring to FIG. 1, the solar cell 10 includes a substrate 800, a first electrode 210, a first charge transport layer 310, a light absorbing layer 100, a second charge transport layer 320, and a second electrode 220, which are sequentially stacked; at this time, the substrate 800 and the first electrode 210 are both light-transmissive materials, the first charge transport layer 310 is a hole transport layer, and the second charge transport layer 320 is an electron transport layer.

[0189] In some embodiments, the electron transport layer includes one or more of the following materials and their derivatives, dopants, and passivated materials:

[0190] [6,6]-phenyl C61 butyric acid methyl ester, [6,6]-phenyl C71 butyric acid methyl ester, fullerene C61, fullerene C60, fullerene C70, tin dioxide, zinc oxide, perylene imide materials, and naphthalene imide materials.

[0191] Further, the electron transport layer has a thickness of 1 nm to 300 nm, for example, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 8 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 150 nm, 160 nm, 180 nm, 200 nm, 210 nm, 220 nm, 250 nm, 260 nm, 280 nm, 300 nm, or a range defined by any two of the above values as the end values. Further, the electron transport layer has a thickness of 1 nm to 100 nm; further, 5 nm to 100 nm; further, 1 nm to 50 nm.

[0192] In some embodiments, the hole transport layer comprises one or more of the following materials and derivatives, dopants, and passivated versions of the resulting materials:

[0193] Nickel oxide, molybdenum oxide, molybdenum sulfide, cuprous oxide, cuprous iodide, cuprous thiocyanate, 2,2',7,7'-tetrakis(N,N-p-methoxyphenylamine)-9,9'-spirobifluorene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, poly-3-hexylthiophene, methoxytriphenylamine-fluoromethylformamide, triptycene-core triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-4-anilinocarbazole-spirobifluorene, polythiophene, and self-assembled monomolecular material.

[0194] In some embodiments, the self-assembled monomolecular material satisfies the structure shown in the following general formula: Q-L-A, wherein Q is selected from substituted or unsubstituted carbazolyl or triphenylamino, L is selected from substituted or unsubstituted alkylene chain, and A is selected from oxygen-containing acid group.

[0195] In some embodiments, the substituent of the substituted or unsubstituted carbazolyl or triphenylamino in the self-assembled monomolecular material includes any one of halogen group, alkoxy group, oxygen-containing acid group, substituted or unsubstituted aromatic group having 6 to 15 ring-forming atoms, substituted or unsubstituted heteroaromatic group having 5 to 15 ring-forming atoms, and substituted or unsubstituted alkyl group having 1 to 5 carbon atoms. In the present application, the structure of the substituent of the substituted or unsubstituted carbazolyl or triphenylamino makes the organic compound have an energy level more suitable for perovskite material, and further improves the performance of the solar cell when applied to the hole transport layer of the solar cell.

[0196] In some embodiments, the substituted or unsubstituted alkylene chain in the self-assembled monomolecular material includes any one of a halogen group, an alkoxy group, an oxygen-containing acid group, an aromatic group having 6-15 ring-forming atoms, a heteroaromatic group having 5-15 ring-forming atoms, or an unsubstituted alkylene chain having 2-11 carbon atoms. By adjusting the number of carbon atoms in L and its substituents, the hydrophobicity of the organic compound is improved while reducing the steric hindrance of the organic compound, further improving the photoelectric conversion efficiency and stability of the solar cell.

[0197] In some embodiments, the oxygen-containing acid group in the self-assembled monomolecular material is selected from any one of a phosphonic acid group, a phosphinic acid group, a sulfonic acid group, a carboxylic acid group, a sulfinic acid group, a boric acid group, or a silicic acid group.

[0198] In some embodiments, the halogen group includes any one of F, Cl, Br, and I.

[0199] In some embodiments, the heteroatom in the heteroaromatic group is selected from at least one of N, O, and S, so that the organic compound has an energy level that is more suitable for commonly used metal oxide hole transport materials and perovskite materials, and when applied to prepare a passivation film of a solar cell, the performance of the solar cell is further improved.

[0200] In some embodiments, the alkoxy group is generally represented by RO-, and examples include methoxy CH3O-, ethoxy C2H5O-, propoxy C3H7O-, and the like.

[0201] In some embodiments, the self-assembled monomolecular material includes at least one of [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl]phosphonic acid (MeO-4PACz), [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz), [4-(9H-carbazol-9-yl)butyl]phosphonic acid (4PACz), [4-(3,6-dibromo-9H-carbazol-9-yl)butyl]phosphonic acid (Br-4PACz), [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid (MeO-2PACz), [2-(3,6-dimethyl-9H-carbazol-9-yl)ethyl]phosphonic acid (Me-2PACz), [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz), and [2-(3,6-dibromo-9H-carbazol-9-yl)ethyl]phosphonic acid (Br-2PACz). The self-assembled monomolecular material is selected from the above-mentioned materials, has good hole transport efficiency, and has a well-matched energy level with the perovskite layer, which is conducive to improving the photoelectric conversion efficiency of the perovskite solar cell.

[0202] Further, the thickness of the hole transport layer is 1 nm to 500 nm, for example, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 8 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 150 nm, 160 nm, 180 nm, 200 nm, 210 nm, 220 nm, 250 nm, 260 nm, 280 nm, 300 nm, 320 nm, 350 nm, 360 nm, 380 nm, 400 nm, 440 nm, 480 nm, 500 nm, or a range defined by any two of the above values as the end values. Further, the thickness of the hole transport layer is 1 nm to 300 nm, further 1 nm to 100 nm, further 5 nm to 100 nm, further 1 nm to 50 nm.

[0203] In some embodiments, the solar cell further comprises a first passivation layer disposed on a side of the light absorbing layer facing the first electrode, optionally, the first passivation layer is disposed on at least a portion of the surface of the light absorbing layer facing the first electrode. The first passivation layer can be used to passivate defects on at least a portion of the surface of the light absorbing layer facing the first electrode, improving the stability and light absorption efficiency of the light absorbing layer.

[0204] Further, the first passivation layer is disposed on a portion or all of the surface of the light absorbing layer facing the first electrode.

[0205] In some embodiments, the solar cell further comprises a second passivation layer disposed on a side of the light absorbing layer facing the second electrode, optionally, the second passivation layer is disposed on at least a portion of the surface of the light absorbing layer facing the second electrode. The second passivation layer can be used to passivate defects on at least a portion of the surface of the light absorbing layer facing the second electrode, improving the stability and light absorption efficiency of the light absorbing layer. Further, the second passivation layer is disposed on a portion or all of the surface of the light absorbing layer facing the second electrode.

[0206] In some embodiments, the material of the first passivation layer and the second passivation layer is a material used to passivate the light absorbing layer, and the material of the first passivation layer and / or the second passivation layer is chemically bonded with anions or cations of the light absorbing layer material. The bulk structure of the light absorbing layer material crystal can generate anion or cation defects, and the material of the first passivation layer and / or the second passivation layer can be chemically bonded with the anions or cations on the defect sites to passivate the defects, reduce non-radiative recombination of carriers, and improve the conversion efficiency of the solar cell. Further, the material of the first passivation layer and the second passivation layer can be used to, but not limited to, passivate cation sites or anion sites in silver bismuth sulfide mineral type materials, especially divalent anion sites, such as S2- passivation of defects at oxygen group element sites.

[0207] In some embodiments, the solar cell includes a first passivation layer and a first charge transport layer, the first passivation layer being disposed between the first charge transport layer and the light absorbing layer.

[0208] In some embodiments, the solar cell includes a second passivation layer and a second charge transport layer, the second passivation layer being disposed between the light absorbing layer and the second charge transport layer.

[0209] In some embodiments, the first passivation layer and the second passivation layer each independently have a thickness of 1 nm to 20 nm, for example, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 8 nm, 10 nm, 12 nm, 15 nm, 16 nm, 20 nm, 25 nm, or a range defined by any two of the aforementioned values as end values.

[0210] In some embodiments, the solar cell includes a first electrode, optionally a first passivation layer, a light absorbing layer, optionally a second passivation layer, and a second electrode, which are stacked. Further, the first electrode is formed on a substrate.

[0211] Referring to FIG. 2, for example, the solar cell 10 includes a first electrode 210, a first passivation layer 410, a light absorbing layer 100, a second passivation layer 420, and a second electrode 220, which are stacked. For example, the solar cell 10 includes a substrate 800, a first electrode 210, a first passivation layer 410, a light absorbing layer 100, a second passivation layer 420, and a second electrode 220, which are stacked.

[0212] In some embodiments, the solar cell includes a first electrode, optionally a first charge transport layer, optionally a first passivation layer, a light absorbing layer, optionally a second passivation layer, optionally a second charge transport layer, and a second electrode, which are stacked. Further, the first electrode is formed on a substrate.

[0213] Referring to FIG. 3, for example, the solar cell 10 includes a first electrode 210, a first charge transport layer 310, a first passivation layer 410, a light absorbing layer 100, a second passivation layer 420, a second charge transport layer 320, and a second electrode 220, which are stacked. For example, the solar cell includes a substrate 800, a first electrode 210, a first charge transport layer 310, a first passivation layer 410, a light absorbing layer 100, a second passivation layer 420, a second charge transport layer 320, and a second electrode 220, which are stacked.

[0214] In some embodiments, the solar cell includes a first electrode, an optional first charge transport layer, a light absorbing layer, an optional second charge transport layer, and a second electrode, which are stacked in sequence. Further, the first electrode is formed on a substrate.

[0215] In some embodiments, the solar cell includes a first electrode, an optional first charge transport layer, an optional first passivation layer, a light absorbing layer, an optional second passivation layer, an optional second charge transport layer, and a second electrode, which are stacked in sequence. Further, the first electrode is formed on a substrate.

[0216] As an example, the solar cell includes a first electrode, a first charge transport layer, a first passivation layer, a light absorbing layer, a second passivation layer, a second charge transport layer, and a second electrode, which are stacked in sequence.

[0217] In some embodiments, the solar cell further includes a first barrier layer, which is disposed between the first electrode and the light absorbing layer.

[0218] It is understood that the barrier layer is used to prevent the reverse transmission of carriers (electrons or holes), so as to avoid the recombination of carriers, thereby improving the open circuit voltage and photoelectric conversion efficiency of the cell.

[0219] In some embodiments, the solar cell includes a first barrier layer and the above-mentioned first charge transport layer, further, the first barrier layer is disposed between the first electrode and the first charge transport layer (as shown in FIG. 4), and / or, the first barrier layer is disposed between the first charge transport layer and the light absorbing layer (not shown). It is understood that the first barrier layer can be disposed between the first electrode and the first charge transport layer, between the first charge transport layer and the light absorbing layer, or both.

[0220] Further, the above-mentioned first charge transport layer is an electron transport layer, and the first barrier layer is a hole barrier layer. The function of the hole barrier layer is to transport electrons and block holes, so as to reduce the recombination of electrons and holes, thereby improving the open circuit voltage and photoelectric conversion efficiency of the cell. Further, the above-mentioned first charge transport layer is a hole transport layer, and the first barrier layer is an electron barrier layer. The function of the electron barrier layer is to transport holes and block electrons, so as to reduce the recombination of electrons and holes, thereby improving the open circuit voltage and photoelectric conversion efficiency of the cell.

[0221] In some embodiments, the solar cell further includes a second barrier layer, which is disposed between the light absorbing layer and the second electrode.

[0222] In some embodiments, the solar cell includes a second blocking layer and the second charge transport layer described above, further, the second blocking layer is disposed between the second charge transport layer and the second electrode (as shown in FIG. 4), and / or, the second blocking layer is disposed between the light absorbing layer and the second charge transport layer (not shown). Understandably, the second blocking layer can be disposed between the second charge transport layer and the second electrode, between the light absorbing layer and the second charge transport layer, or both.

[0223] Further, the second charge transport layer described above is an electron transport layer, and the second blocking layer is a hole blocking layer. The function of the hole blocking layer is to transport electrons and block holes, so as to reduce the recombination of electrons and holes, and improve the open circuit voltage and photoelectric conversion efficiency of the cell. Further, the second charge transport layer described above is a hole transport layer, and the second blocking layer is an electron blocking layer. The function of the electron blocking layer is to transport holes and block electrons, so as to reduce the recombination of electrons and holes, and improve the open circuit voltage and photoelectric conversion efficiency of the cell.

[0224] Further, one of the first blocking layer and the second blocking layer is an electron blocking layer, and the other is a hole blocking layer.

[0225] Further, the LUMO energy level (lowest unoccupied molecular orbital) of the material of the hole blocking layer is lower than the CBM (conduction band minimum) of the material of the light absorbing layer, and the HOMO energy level (highest occupied molecular orbital) of the material of the hole blocking layer is lower than the VBM (valence band maximum) of the material of the light absorbing layer.

[0226] In this application, the LUMO energy level and the HOMO energy level of the material can be tested by ultraviolet photoelectron spectroscopy (UPS).

[0227] Further, the material of the hole blocking layer includes but is not limited to one or more of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, SnO2, ZnO and cerium oxide (CeOx), x is 0-2, which can be any value within the range.

[0228] Further, the thickness of the hole blocking layer is 0.5 nm-50 nm, further 1 nm-50 nm, 0.5 nm-20 nm or 1 nm-20 nm, as an example, it can be 0.5 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 8 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm or a range formed by any two of the above values as end values.

[0229] Further, the LUMO energy level of the material of the electron blocking layer is higher than the CBM (conduction band minimum) of the material of the light absorbing layer, and the HOMO energy level of the material of the electron blocking layer is higher than the VBM (valence band maximum) of the material of the light absorbing layer.

[0230] Further, the electron blocking layer includes, but is not limited to, one or more of molybdenum oxide, vanadium oxide, LiF, and AI2O3. Optionally, the electron blocking layer includes AI2O3. Further, the electron blocking layer has a thickness of 0.5 nm to 50 nm, further 1 nm to 50 nm, 0.5 nm to 20 nm, or 1 nm to 20 nm, as examples, can be 0.5 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 8 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, or a range defined by any two of the above values as endpoints.

[0231] Further, the first blocking layer and the second blocking layer can have the same or different thicknesses, each independently having a thickness of 0.5 nm to 50 nm, as examples, can be 0.5 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 8 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, or a range defined by any two of the above values as endpoints.

[0232] In some embodiments, the solar cell includes a first blocking layer and a first passivation layer, the first blocking layer is disposed between the first electrode and the first passivation layer. Further, the solar cell further includes a first charge transport layer, the first blocking layer is disposed between the first electrode and the first charge transport layer, and / or the first blocking layer is disposed between the first charge transport layer and the light absorbing layer; the first passivation layer is disposed between the first charge transport layer and the light absorbing layer.

[0233] In some embodiments, the solar cell includes a second blocking layer and a second passivation layer, the second blocking layer is disposed between the second passivation layer and the second electrode. Further, the solar cell further includes a second charge transport layer, the second blocking layer is disposed between the second charge transport layer and the second electrode, and / or the second blocking layer is disposed between the light absorbing layer and the second charge transport layer; the second passivation layer is disposed between the light absorbing layer and the second charge transport layer.

[0234] In some embodiments, the solar cell includes a first electrode, an optional first blocking layer, an optional first charge transport layer, a light absorbing layer, an optional second charge transport layer, an optional second blocking layer, and a second electrode, which are stacked. Further, the first electrode is formed on a substrate.

[0235] Referring to FIG. 4, as an example, the solar cell 10 includes a first electrode 210, a first barrier layer 610, a first charge transport layer 310, a light absorbing layer 100, a second charge transport layer 320, a second barrier layer 620, and a second electrode 220 stacked. Further, the solar cell includes a substrate 800, the first electrode 210, the first barrier layer 610, the first charge transport layer 310, the light absorbing layer 100, the second charge transport layer 320, the second barrier layer 620, and the second electrode 220 stacked. Further, the first charge transport layer 310 is a hole transport layer, and the second charge transport layer 320 is an electron transport layer.

[0236] In some embodiments, the solar cell includes a first electrode, an optional first charge transport layer, an optional first barrier layer, a light absorbing layer, an optional second barrier layer, an optional second charge transport layer, and a second electrode stacked. Further, the first electrode is formed on a substrate.

[0237] As an example, the solar cell includes a first electrode, a first charge transport layer, a first barrier layer, a light absorbing layer, a second barrier layer, a second charge transport layer, and a second electrode stacked.

[0238] In some embodiments, the solar cell includes a first electrode, an optional first barrier layer, an optional first charge transport layer, an optional first barrier layer, a light absorbing layer, an optional second barrier layer, an optional second charge transport layer, an optional second barrier layer, and a second electrode stacked. Further, the first electrode is formed on a substrate.

[0239] As an example, the solar cell includes a first electrode, a first barrier layer, a first charge transport layer, a first barrier layer, a light absorbing layer, a second barrier layer, a second charge transport layer, a second barrier layer, and a second electrode stacked.

[0240] In some embodiments, the solar cell includes a first electrode, an optional first barrier layer, an optional first charge transport layer, an optional first passivation layer, a light absorbing layer, an optional second passivation layer, an optional second charge transport layer, an optional second barrier layer, and a second electrode stacked. Further, the first electrode is formed on a substrate.

[0241] As an example, the solar cell includes a first electrode, a first barrier layer, a first charge transport layer, a first passivation layer, a light absorbing layer, a second passivation layer, a second charge transport layer, a second barrier layer, and a second electrode stacked. Further, the first charge transport layer is a hole transport layer, and the second charge transport layer is an electron transport layer.

[0242] In some embodiments, the solar cell includes a first electrode, an optional first charge transport layer, an optional first blocking layer, an optional first passivation layer, a light absorbing layer, an optional second passivation layer, an optional second blocking layer, an optional second charge transport layer, an optional second blocking layer, and a second electrode, which are stacked in the order listed. Further, the first electrode is formed on a substrate.

[0243] As an example, the solar cell includes a first electrode, a first charge transport layer, a first blocking layer, a first passivation layer, a light absorbing layer, a second passivation layer, a second blocking layer, a second charge transport layer, a second blocking layer, and a second electrode, which are stacked in the order listed.

[0244] In some embodiments, the solar cell further includes a first charge injection layer and a first charge transport layer, the first charge injection layer being disposed between the first electrode and the first charge transport layer.

[0245] In some embodiments, the solar cell further includes a second charge injection layer and a second charge transport layer, the second charge injection layer being disposed between the second electrode and the second charge transport layer.

[0246] One of the first and second charge injection layers is an electron injection layer, and the other is a hole injection layer. When the first charge transport layer is an electron transport layer, the first charge injection layer is an electron injection layer. The electron injection layer facilitates efficient injection of electrons from the electrode into the electron transport layer. When the first charge transport layer is a hole transport layer, the first charge injection layer is a hole injection layer. The hole injection layer facilitates efficient injection of holes from the electrode into the hole transport layer.

[0247] Further, the material of the electron injection layer includes one or more of zinc oxide (ZnO), titanium oxide (Ti02), cesium fluoride (CsF), LiF, Li20, fullerene and its derivatives, carbon nanotube (CNT), and graphene.

[0248] Further, the material of the hole injection layer includes, but is not limited to, tetrafluorotetracyanoquinodimethane, N,N'-bis[4-di(m-tolyl)aminophenyl]-N,N'-diphenylbenzidine, tungsten oxide (WO 3-x ), CD2, C is one or more of Cr or Mo; D is one or more of O, S, Se, and Te.

[0249] In some embodiments, the solar cell includes a first electrode, an optional first charge injection layer, an optional first charge transport layer, a light absorbing layer, an optional second charge transport layer, an optional second charge injection layer, and a second electrode, which are stacked in the order listed. Further, the first electrode is formed on a substrate.

[0250] Referring to FIG. 5, as an example, the solar cell 10 includes a first electrode 210, a first charge injection layer 710, a first charge transport layer 310, a light absorbing layer 100, a second charge transport layer 320, a second charge injection layer 720, and a second electrode 220, which are stacked. As an example, the solar cell 10 includes a substrate 800, a first electrode 210, a first charge injection layer 710, a first charge transport layer 310, a light absorbing layer 100, a second charge transport layer 320, a second charge injection layer 720, and a second electrode 220, which are stacked.

[0251] In some embodiments, the solar cell includes a first electrode, an optional first charge injection layer, an optional first charge transport layer, an optional first passivation layer, a light absorbing layer, an optional second passivation layer, an optional second charge transport layer, an optional second charge injection layer, and a second electrode, which are stacked. Further, the first electrode is formed on a substrate.

[0252] As an example, the solar cell includes a first electrode, a first charge injection layer, a first charge transport layer, a first passivation layer, a light absorbing layer, a second passivation layer, a second charge transport layer, a second charge injection layer, and a second electrode, which are stacked.

[0253] In some embodiments, the solar cell includes a first electrode, an optional first charge injection layer, an optional first charge transport layer, an optional first passivation layer, a light absorbing layer, an optional second passivation layer, an optional second charge transport layer, an optional second charge injection layer, and a second electrode, which are stacked. Further, the first electrode is formed on a substrate.

[0254] As an example, the solar cell includes a first electrode, a first charge injection layer, a first charge transport layer, a first passivation layer, a light absorbing layer, a second passivation layer, a second charge transport layer, a second charge injection layer, and a second electrode, which are stacked.

[0255] It is understood that one or more of the above-mentioned charge transport layers, passivation layers, barrier layers, and charge injection layers can be arbitrarily combined with each other to form a combined technical solution, which is within the scope of the technical solutions of the present application.

[0256] In some embodiments, the material of the first electrode and the second electrode each independently includes one or more of an inorganic conductive material, an organic conductive material, and an organic-inorganic hybrid conductive material.

[0257] As an example, the inorganic conductive material includes one or more of a carbon material, a metal material and an alloy thereof, and a conductive metal oxide.

[0258] Further, the carbon material includes, but is not limited to, one or more of graphite, graphene, and carbon nanotubes.

[0259] Further, the conductive metal oxide includes a transparent conductive metal oxide.

[0260] Further, the metal material and the metal material in the alloy thereof include one or more of Au (gold), Ag (silver), Cu (copper), Al (aluminum), Ni (nickel), Cr (chromium), Bi (bismuth), Pt (platinum), Mg (magnesium), Mo (molybdenum), and W (tungsten).

[0261] As an example, the organic conductive material includes one or more of polyacrylic acid, polyimide (PI), polyaniline (PANI), polythiophene (PT), polypyrrole, and derivatives thereof. The polythiophene (PT) and the derivatives thereof include, but are not limited to, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid (PEDOT:PSS).

[0262] As above, at least one of the first electrode and the second electrode is a light-transmitting electrode. The material of the light-transmitting electrode includes, but is not limited to, a transparent conductive metal oxide. As an example, the material of the transparent electrode can include, but is not limited to, one or more of FTO (fluorine-doped tin oxide), ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), IZO (indium zinc oxide), lanthanide-doped indium oxide, antimony-doped tin oxide, gallium zinc oxide (GZO), indium tungsten oxide (IWO), and the like transparent conductive metal oxide.

[0263] Further, the solar cell further includes a substrate, and the first electrode is disposed on the substrate. The substrate can be glass, so that the substrate and the material of the first electrode form a transparent conductive glass. The transparent conductive glass can be, for example, FTO (fluorine-doped tin oxide), ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), IZO (indium zinc oxide), and the like transparent conductive glass.

[0264] It can be understood that, in addition to using glass as a substrate, the light-transmitting electrode can also use a transparent flexible substrate. Specifically, the material of the transparent flexible substrate can be, for example, an organic polymer material, which can be mixed in different proportions from one or more of the following materials: one or more of polyethylene terephthalate, polyethylene, polypropylene, polystyrene, polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate glycol (PEN), and polydimethylsiloxane (PDMS).

[0265] When one of the electrodes is a light-transmitting electrode, the other electrode can be a light-transmitting electrode or a non-light-transmitting electrode. If the other electrode is a non-light-transmitting electrode, the material thereof includes, but is not limited to, an organic material, or an inorganic material, or a conductive material mixed in different proportions from both the organic material and the inorganic material. Further, the inorganic material includes a metal material, and the corresponding electrode is a metal electrode.

[0266] The above-mentioned electrode layer, hole transport layer, electron transport layer, barrier layer, injection layer, light absorption layer and other structural layers can be prepared by using the preparation methods commonly used in the art, including but not limited to one or more of coating method and deposition method.

[0267] Further, the coating method includes but is not limited to one or more of spin coating, spraying, brushing, rubbing, screen printing, gravure coating, blade coating and slot coating. Further, according to the precursor used in the coating method, it includes but is not limited to one or more of sol-gel method and solution method.

[0268] Further, the deposition method includes but is not limited to one or more of vacuum evaporation, sputter deposition, plasma deposition, ion deposition, atomic layer deposition, vacuum flash method.

[0269] For example, the tin dioxide electron transport layer can be prepared by using atomic layer deposition technology (ALD); the organic electron transport layer such as [6,6]-phenyl C61 butyric acid methyl ester can be prepared by using vacuum evaporation;

[0270] For example, the perovskite layer can be prepared by using vacuum flash method (VCD), vacuum evaporation, multi-source co-evaporation and other methods; the perovskite layer can be prepared by using coating method.

[0271] For example, the hole transport layer such as nickel oxide can be prepared by using magnetron sputtering;

[0272] For example, the metal electrode layer can be prepared by using vacuum evaporation. It can be understood that the structure of the solar cell involved in the present application can not be limited to the above-mentioned structural layers. Other functional layers such as buffer layer can also be introduced according to the needs.

[0273] In some embodiments, the direction of the layer structure of the solar cell is the thickness direction, which can be referred to as the first direction, and can also be referred to as the Y direction in FIG. 6.

[0274] Referring to FIG. 6, the solar cell 10 is provided with a P1 channel, a P2 channel and a P3 channel. The P1 channel, the P2 channel and the P3 channel are etching areas arranged across layers, which are used to divide the large-area film layer into multiple sub-cells, and make the multiple sub-cells form a series structure, so as to improve the output voltage and power. The P1, the P2 and the P3 are respectively used to connect the structural layers arranged at intervals, so that the structural layer between the first electrode of one sub-cell and the second electrode of another sub-cell constitutes a path, and the solar cell forms a solar cell module.

[0275] The P1 trench, the P2 trench and the P3 trench can each independently be a linear etching region, also referred to as an etching line. The P1 trench, the P2 trench and the P3 trench can each independently be a laser etching region. The number of the P1 trench, the P2 trench and the P3 trench can each independently be one or more.

[0276] The P1 trench is arranged on the first electrode and divides the first electrode along the thickness direction Y of the solar cell, so that the first electrodes of two adjacent sub-cells in the X direction are not connected to each other, thereby achieving insulation.

[0277] The P2 trench divides the light-absorbing layer along the thickness direction Y of the solar cell and exposes the first electrode. The P2 trench is filled with a material of the second electrode or other conductive material, so as to connect the first electrode and the second electrode of adjacent sub-cells.

[0278] The P3 trench divides the second electrode along the thickness direction Y of the solar cell, thereby forming a plurality of sub-cells, so that the second electrodes of two adjacent sub-cells in the X direction are not connected to each other, thereby achieving insulation. Through the trenches, the division and connection of the sub-cells in the solar cell can be achieved.

[0279] The height direction of each trench corresponds to the thickness direction Y of the solar cell. The width direction of each trench corresponds to the width direction of the solar cell, which can be referred to as the second direction, and can also refer to the X direction in FIG. 6. The length direction of each trench corresponds to the length direction of the solar cell, which can be referred to as the third direction or the Z direction. In some embodiments, the Z direction, the X direction and the Y direction are perpendicular to each other.

[0280] It can be understood that the height of each trench is determined according to the thickness of the structure layer divided by the trench, the width of each trench can be adjusted according to the laser scribing process, and the length of each trench can be determined according to the length of the solar cell.

[0281] In some embodiments, a solar cell 10 shown in FIG. 6 is provided, which includes a substrate 800, a first electrode 210, a first charge transport layer 310, a light-absorbing layer 100, a second charge transport layer 320 and a second electrode 220 arranged in sequence along the Y direction. The solar cell 10 is provided with a P1 trench for dividing the first electrode 210, a P2 trench for dividing the first charge transport layer 310, the light-absorbing layer 100 and the second charge transport layer 320, and a P3 trench for dividing the second electrode 220.

[0282] The trenches in the solar cell 10 divide the solar cell 10 into a plurality of sub-cells, each of which includes a P1 trench, a P2 trench and a P3 trench, and the P1 trench, the P2 trench and the P3 trench in each sub-cell are arranged in sequence along the X direction.

[0283] Each sub-cell includes an active region 11 and three kinds of channel-surrounded dead regions 12. The active region 11 refers to an area in a solar cell that can effectively absorb photons, generate photo-generated carriers (electrons and holes), and achieve charge separation and transport. The corresponding area is between the directly adjacent P3 channel and the P1 channel. The P3 channel and the P1 channel are directly adjacent, which means that there is no P2 channel between the two.

[0284] In the solar cell 10 shown in FIG. 6, the P1 channel penetrates the first electrode 210 and is connected to the substrate 800 and the first charge transport layer 310 at both ends, respectively; the P2 channel penetrates the second charge transport layer 320, the light absorbing layer 100, and the first charge transport layer 310, and is connected to the first electrode 210 and the second electrode 220 at both ends, respectively; the P3 channel penetrates the second electrode 220, the second charge transport layer 320, the light absorbing layer 100, and the first charge transport layer 310, and exposes the outer side surface of the first electrode 210, wherein the outer side surface of the first electrode 210 refers to the side surface of the first electrode 210 facing the light absorbing layer 100.

[0285] In the present application, "stacked" means that the defined two adjacent structure layers are arranged adjacent to each other, and the two adjacent structure layers can be in direct contact. It can be understood that an unavoidable transition layer can be formed during the process of combining the two adjacent structure layers.

[0286] In some embodiments, the above-mentioned solar cell can also be a stacked solar cell, which includes one or more of the above-mentioned battery cells containing silver bismuth sulfide mineral type material. Further, the stacked solar cell includes a first battery cell, which includes the above-mentioned silver bismuth sulfide mineral type material. Further, the first battery cell includes the above-mentioned first electrode, light absorbing layer, and second electrode; further, the first battery cell can also optionally include the above-mentioned other film layers, including but not limited to one or more of the transport layer, passivation layer, barrier layer, and charge injection layer.

[0287] Further, the stacked solar cell further includes a second battery cell, which is stacked on the first battery cell. The material of the light absorbing layer included in the second battery cell includes but is not limited to one or more of the following semiconductor materials: perovskite material, silver bismuth sulfide mineral type material, crystalline silicon material, copper indium gallium selenium, cadmium telluride, copper zinc tin sulfide, and gallium arsenide. The bandgaps of the light absorbing layers in the first battery cell and the second battery cell are different. Further, the bandgap of the light absorbing layer in the second battery cell is greater than the bandgap of the light absorbing layer in the first battery cell.

[0288] Further, the band gap of the light-absorbing layer in the second cell is 1.5 eV to 1.9 eV, and can be 1.53 eV to 1.65 eV. As an example, the band gap of the light-absorbing layer in the second cell can be 1.5 eV, 1.53 eV, 1.55 eV, 1.58 eV, 1.6 eV, 1.61 eV, 1.62 eV, 1.63 eV, 1.65 eV, 1.66 eV, 1.68 eV, 1.7 eV, 1.75 eV, 1.8 eV, 1.85 eV, 1.9 eV, or a range defined by any two of the above values as end values.

[0289] Further, the second cell includes a third electrode, a light-absorbing layer, and a fourth electrode. Further, the stacked solar cell also includes a connecting layer. The connecting layer is arranged between the first cell and the second cell to connect the two cells. Further, the connecting layer is arranged between the second electrode and the third electrode.

[0290] In some embodiments, the connecting layer includes an insulating layer. The connecting layer with the insulating layer separates the first cell and the second cell in the circuit, and the two cells each have two electrodes, a total of four electrodes, and the circuits of the two cells are independent of each other, forming a four-terminal stacked solar cell. The working principle of the stacked solar cell with the connecting layer with the insulating layer is that each cell has independent electrodes and can independently receive sunlight and generate voltage and current. Then, the outputs of the two cells are connected in parallel through an external circuit, so that the total voltage is the lower voltage of the two cells, and the total current is the sum of the currents of the two cells.

[0291] The four-terminal stacked solar cell has lower requirements for the current and voltage matching of the cells, because each cell works independently and does not require precise matching of the current and voltage of the cells like the two-terminal stacked solar cell; the four-terminal stacked solar cell can more flexibly select different types and performance of cells for combination to adapt to different application scenarios and requirements; and to some extent, reduces the performance loss caused by the mutual influence between the cells.

[0292] Further, since the third electrode and the fourth electrode are located in the middle position of the stacked solar cell, in order to further increase the light energy utilization rate of the stacked solar cell and enable the remaining solar energy after being absorbed by the previous cell to enter the next cell, the third electrode and the fourth electrode can also be set as light-transmitting electrodes.

[0293] Further, at least one of the first electrode and the second electrode is a light-transmitting electrode. Further, only one of the first electrode and the second electrode is a light-transmitting electrode, and the light-transmitting electrode serves as the incident side of the sunlight. Further, both of the first electrode and the second electrode are light-transmitting electrodes, and both of the electrodes can serve as the incident side of the sunlight. For example, the sunlight can be incident from both sides, which is advantageous for increasing the intensity of the sunlight received by the tandem solar cell.

[0294] In some embodiments, as an example of a four-terminal tandem solar cell, the tandem solar cell includes a first electrode, a first charge transport layer, a first light-absorbing layer, a second charge transport layer, a third electrode, a connecting layer, a fourth electrode, a third charge transport layer, a second light-absorbing layer, a fourth charge transport layer, and a second electrode, which are sequentially stacked.

[0295] Since the circuits of the cell units in the four-terminal tandem solar cell are independent, the types of the charge transport layers on both sides of the connecting layer or the insulating layer are not limited and can be arbitrarily combined. In other words, the materials of the second charge transport layer and the third charge transport layer can be the same or different, and each can independently be an electron transport layer or a hole transport layer. Further, one of the first charge transport layer and the second charge transport layer is an electron transport layer, and the other is a hole transport layer; and one of the third charge transport layer and the fourth charge transport layer is an electron transport layer, and the other is a hole transport layer.

[0296] In some embodiments, the material of the insulating layer includes, but is not limited to, glass or an insulating adhesive. Further, the glass is transparent glass; and further, the insulating adhesive is transparent adhesive.

[0297] In some embodiments, the first cell unit and the second cell unit are connected by a common electrode. For example, a common second electrode is used for connection, and the second cell unit includes a fifth electrode opposite to the common second electrode. In this way, the tandem solar cell includes a first electrode, a first light-absorbing layer, a second electrode, a second light-absorbing layer, and a fifth electrode, which are sequentially stacked. The second electrode serves as a common electrode and can output as a positive electrode or a negative electrode, and the first electrode and the fifth electrode are electrodes opposite in polarity to the common electrode, thereby forming a three-terminal tandem solar cell. The two cell units in the three-terminal tandem solar cell are connected in parallel, and there is no problem of current mismatch.

[0298] Further, the common electrode has a large thickness, but is generally smaller than the total thickness of the second electrode and the third electrode in the four-terminal tandem solar cell, so that the amount of electrode material used can be reduced, and the cost can be reduced to a certain extent.

[0299] Further, the common electrode comprises a transparent conductive oxide layer, a gate line electrode layer and another transparent conductive oxide layer which are stacked. The transparent conductive oxide layer can provide good light transmission, and the gate line electrode layer can improve the collection of carriers while occupying as little light absorption area as possible. Further, the gate line cell layer comprises a metal gate line.

[0300] It can be understood that the material selection range of the charge transport layer and the electrode layer in the second cell unit can be the same as that of the charge transport layer and the electrode layer in the first cell unit. Further, the second cell unit can also be provided with a corresponding passivation layer, barrier layer, and charge injection layer as needed, and the material selection range of each can be the same as that of the corresponding film layer in the first cell unit, which will not be described in detail here. Further, the first light absorption layer described above comprises the silver bismuth sulfide mineral type material. The second light absorption layer comprises one or more semiconductor materials selected from the group consisting of perovskite material, silver bismuth sulfide mineral type material, crystalline silicon material, copper indium gallium selenium, cadmium telluride, copper zinc tin sulfide, and gallium arsenide. Further, the band gap of the second light absorption layer is greater than that of the first light absorption layer. Further, the second light absorption layer comprises a perovskite material, and as an example, the second light absorption layer is a perovskite material layer.

[0301] In some embodiments, the perovskite material comprises one or more of a compound of the formula A’B’Y3 and a compound of the formula A’2CDY6;

[0302] wherein A’ comprises a monovalent cation, B’ comprises a divalent cation, C comprises a monovalent cation, D comprises a trivalent cation, and Y comprises a monovalent anion. Further, A’ is a monovalent cation, B’ is a divalent cation, C is a monovalent cation, D is a trivalent cation, and Y is a monovalent anion.

[0303] In some embodiments, A’ comprises one or more of a monovalent metal cation and a monovalent organic cation. Further, the monovalent metal cation in A’ comprises one or more of Li + , Na + , K + , Rb + , and Cs + , and the monovalent organic cation comprises one or more of an organic amine ion, a formamidinium ion, and an imidazolium ion. Further, the organic amine ion comprises one or more of a methylamine ion (CH3NH3 + , MA + ), a dimethylammonium ion (MDA 2+ ), a phenethylammonium ion (PEA + ), an oleyl ammonium ion (OA + ), an ethylamine ion, a propylamine ion, a butylamine ion, a pentylamine ion, and a hexylamine ion.

[0304] In some embodiments, B' comprises one or more of a divalent metal cation and a divalent organic cation. Further, the divalent metal cation in B' comprises one or more of the following divalent cations: Pb, Sn, Zn, Ti, Sb, Bi, Ni, Fe, Co, Ag, Cu, Ga, Ge, Be, Mg, Ca, Sr, Ba, In, Al, Mn, Cr, Mo, and Eu.

[0305] In some embodiments, C comprises one or more of a monovalent metal cation and a monovalent organic cation. Further, the monovalent metal cation in C comprises one or more of Cs + , Ag + , K + , and Rb + .

[0306] In some embodiments, D comprises one or more of a trivalent metal cation and a trivalent organic cation. Further, the trivalent metal cation in D comprises one or more of Bi 3+ , Ni 3+ , Fe 3+ , Sb 3+ , In 3+ , and Cu 3+ .

[0307] In some embodiments, Y comprises one or more of a monovalent inorganic anion and a monovalent organic anion. Further, Y comprises one or more of a halogen ion and a halogen-like ion; optionally, Y comprises one or more of F - , Cl - , Br - , I - , CN - , CH3COO - , SCN - , BF4 - , SeCN - , PF6 - .

[0308] In some embodiments, the second light absorbing layer has a thickness of 200 nm to 1000 nm. As an example, the second light absorbing layer has a thickness of 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm; optionally, 400 nm to 600 nm.

[0309] The perovskite material layer can be prepared by a method commonly used in the art, including but not limited to sol-gel method, coating, multi-source co-evaporation and the like. It can be understood that the coating can be implemented by, but not limited to, spin coating, slot coating, brush coating, rubbing coating, blade coating, screen printing and spraying and the like. Further, the perovskite material layer is a three-dimensional perovskite film.

[0310] As an example, the perovskite material in the perovskite material layer can include one or more of CsFAPbX3, CsMAPbX3, CsFAMAPbX3, CsPbX3, MAPbX3, FAPbX3, CsFAPbSnX3, CsMAPbSnX3, CsFAMAPbSnX3, CsPbSnX3, MAPbSnX3 and FAPbSnX3. Further, as an example, the perovskite material in the perovskite light-absorbing layer can be selected from one or more of CsFAPbI3, CsPbI3 and FAPbI3.

[0311] As an example, the perovskite material has a general formula as follows: Cs a FA b MA c Pb d Sn e I f Br g , wherein a = 0-0.05, b = 0.8-0.95, c = 0-0.1, d = 0.5-1, e = 0-0.5, f = 2.0-3, g = 0-1, a+b+c = 1, d+e = 1, f+g = 3.

[0312] In an embodiment of the present application, a photovoltaic module is also provided, which includes the solar cell described above.

[0313] The solar cell described above has good stability, which can improve the stability and photoelectric conversion efficiency of the photovoltaic module.

[0314] In the photovoltaic module described above, one or more solar cells described above can be selected according to specific application scenarios; further, in the photovoltaic module described above, a plurality of solar cells described above are connected in series or in parallel to form a cell piece.

[0315] In some embodiments, the photovoltaic module described above further includes a photovoltaic glass layer, an adhesive layer and a back plate.

[0316] The two surfaces of the cell piece are respectively provided with an adhesive layer, a back plate is arranged on the surface away from the cell piece in one of the adhesive layers, and a photovoltaic glass layer is arranged on the surface away from the cell piece in the other adhesive layer.

[0317] The photovoltaic glass layer and the back plate are used for protecting the solar cell, and have the functions of sealing, insulation and waterproofing; the adhesive layer is used for bonding the photovoltaic glass layer and the solar cell and bonding the back plate and the solar cell.

[0318] Non-limitingly, the material of the photovoltaic glass layer can be tempered glass, the material of the back plate can be TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the material of the adhesive layer can be EVA (polyethylene-polyvinyl acetate copolymer).

[0319] Further, the photovoltaic module further comprises a junction box and a frame.

[0320] The junction box is used for protecting the power generation system of the entire photovoltaic module, and is equivalent to a current transfer station. When a short circuit occurs in the solar cell, the junction box automatically disconnects the short-circuited cell string.

[0321] The frame can support and protect the entire photovoltaic module, and the frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0322] Further, the connection between the frame and other parts of the photovoltaic module is bonded and sealed by silicone. The photovoltaic module can convert solar energy into electrical energy, which can be stored in a storage battery or used to drive a load.

[0323] In some embodiments, the photovoltaic module is a solar cell panel.

[0324] An embodiment of the present application further provides a photovoltaic system comprising the photovoltaic module.

[0325] The photovoltaic system uses the photovoltaic effect of the solar cell in the photovoltaic module to directly convert solar radiation energy into electrical energy, and has high stability and efficiency.

[0326] In some embodiments, the photovoltaic system is a photovoltaic power generation system.

[0327] The photovoltaic module is the core part of the photovoltaic power generation system. In the photovoltaic system, one or more photovoltaic modules are included, which can be selected according to the specific application scenario. Further, when a plurality of photovoltaic modules are included in the photovoltaic system, the plurality of photovoltaic modules form a photovoltaic array.

[0328] The photovoltaic system can be an independent photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0329] The stand-alone photovoltaic power generation system includes a photovoltaic array, a battery pack, a charge controller, a power electronic converter (inverter), a load, etc. The working principle is that solar radiation energy is first converted into electric energy by the photovoltaic array, and then converted by the power electronic converter to supply power to the load. At the same time, the excess electric energy is stored in the energy storage device in the form of chemical energy through the charge controller. Thus, when the sunlight is insufficient, the energy stored in the battery can be converted into AC 220V, 50Hz electric energy through the power electronic inverter, filtering, and power transformer to supply the AC load.

[0330] The grid-connected photovoltaic power generation system includes a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and system monitoring. The working principle is that solar radiation energy is converted by the photovoltaic array, and then converted into high-voltage DC through the high-frequency DC / DC boost circuit. Then, the high-voltage DC is inverted by the power electronic inverter to output a sinusoidal AC current consistent with the grid voltage and frequency to the grid.

[0331] The above two photovoltaic power generation systems have respective characteristics, and can be selected according to specific application scenarios.

[0332] An embodiment of the present application provides a power utilization device, which includes at least one of the above-described solar cell and the above-described photovoltaic module.

[0333] In some embodiments, the above-described solar cell or photovoltaic module can be used as a power supply of the power utilization device, and can also be used as an energy storage unit of the power utilization device.

[0334] Further, the power utilization device can include a mobile device, such as an electric vehicle, an electric train, a ship, a satellite, etc., but is not limited thereto.

[0335] FIG. 7 is a power utilization device 20 as an example. The power utilization device 20 is a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle, etc.

[0336] In some embodiments, the above-described solar cell can be used as a power generation device of the power utilization device. The type of the power generation device can include, but is not limited to, integrated power generation. The position of the power generation device can include, but is not limited to, the roof of a car, a backboard, etc.

[0337] An embodiment of the present application provides a power generation device, which includes at least one of the above-described solar cell and the above-described photovoltaic module.

[0338] Further, the power generation device is a photovoltaic photoelectric device.

[0339] In order to make the technical problems, technical solutions and beneficial effects solved in the present application clearer, the present application will be further described in detail below in conjunction with embodiments and drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature, and is in no way limiting on the present application and its applications. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative effort belong to the scope of protection of the present application.

[0340] Unless otherwise specified in the embodiments, the techniques or conditions are carried out according to the techniques or conditions described in the literature in the art or according to the product instructions. Unless otherwise specified, the reagents or instruments used are all conventional products that can be obtained by purchase in the market.

[0341] Embodiment 1

[0342] The preparation of the solar cell comprises the following steps:

[0343] (1) First electrode: The first electrode layer is disposed on a glass substrate (substrate), and the material of the first electrode layer is fluorine-doped tin oxide (FTO). The glass substrate with the first electrode layer is sequentially cleaned with acetone, alcohol and deionized water, and then dried for use.

[0344] (2) Electron blocking layer: An Al2O3 layer with a thickness of 1 nm to 10 nm is prepared on the FTO of the FTO conductive glass after drying by atomic layer deposition (ALD).

[0345] (3) First charge transport layer (hole transport layer): [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz) is added to an ethanol solvent and stirred, and the ethanol solution of Me-4PACz is spin-coated onto the Al2O3 layer (spin-coating speed is 4000 rpm, spin-coating time is 30 s), and then transferred to a hot stage, and annealed at 100°C for 10 min to form a first charge transport layer.

[0346] (4) Light absorbing layer: 44 mg of AgNO3, 102 mg of Bi(NO3)3 and 59 mg of thiourea are added to 1 mL of DMSO (dimethyl sulfoxide), stirred at a speed of 600 rpm (revolutions per minute) on a magnetic stirrer for 2 h, filtered, and an AgBiS2 precursor solution is prepared; 100 μL of the above AgBiS2 precursor solution is spin-coated onto the above first charge transport layer (spin-coating speed is 6000 rpm, acceleration is 1000 rpm, and coating time is 60 s), and then transferred to a hot stage, and annealed at 200°C for 10 min to form a light absorbing layer.

[0347] (5) Second charge transport layer (electron transport layer): A layer of C60 with a thickness of 30 nm is evaporated on the light absorbing layer to form a second charge transport layer.

[0348] (6) Hole blocking layer: A layer of bathocuproine (BCP) with a thickness of 10 nm is evaporated to form a hole blocking layer.

[0349] (7) Second electrode: A layer of copper (Cu) with a thickness of 100 nm is evaporated on the hole blocking layer to form a second electrode. An AgBiS2 solar cell device is prepared.

[0350] The photoelectric conversion efficiency and stability of the solar cell device are tested.

[0351] (1) The photoelectric conversion efficiency of the solar cell device is tested. The testing method is as follows:

[0352] The battery performance is tested using Keithley 2400 SMU under 100 mW / cm 2 of light source, and the photoelectric conversion efficiency is obtained. The photoelectric conversion efficiency PCE is calculated by the following parameters: PCE = Pout / Popt = Voc x Jsc x (Vmpp x Jmpp) / (Voc x Jsc) / Popt = Voc x Jsc x FF / Popt

[0353] Where Pout, Popt, Vmpp, Jmpp, Voc and Jsc are the battery output power, incident light power, battery maximum power point voltage, battery maximum power point current, open circuit voltage and short circuit current, respectively. FF is the fill factor.

[0354] (2) The stability of the solar cell device is tested. The testing method is as follows:

[0355] The solar cell is placed under 65℃, 100 mW / cm 2 of light source for continuous irradiation, and the change of its photoelectric conversion efficiency with aging time is tracked. The time required for its photoelectric conversion efficiency to decay to 80% of the initial efficiency is recorded as T80, and the size of this parameter indicates the stability of the solar cell.

[0356] The prepared solar cell includes the silver bismuth sulfide film AgBiS2, and because the silver bismuth sulfide material AgBiS2 has good thermal stability, the solar cell has good device stability and provides good photoelectric conversion efficiency during long-term operation.

[0357] Any combination of the technical features in the above-described embodiments can be made, and for the sake of brevity, not all possible combinations are described, however, it is to be understood that the application encompasses all such possible combinations.

[0358] The above-described embodiments only express several implementation manners of the application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the patent scope of the application. It should be pointed out that, for ordinary skilled persons in the art, several modifications and improvements can be made without departing from the concept of the application, and these all belong to the protection scope of the application. Therefore, the patent protection scope of the application should be subject to the appended claims, and the description and drawings can be used to explain the scope of the claims.

Claims

1. A solar cell comprising a silver bismuth sulfide mineral type material.

2. The solar cell of claim 1, wherein, The silver bismuth sulfide mineral type material comprises one or more of a cubic rock salt phase crystal form and a hexagonal phase crystal form.

3. The solar cell of any of claims 1 to 2, wherein, The silver bismuth sulfide mineral type material has a grain size of ≥10 nm, optionally 10 nm to 10 μm, more optionally 10 nm to 500 nm or 50 nm to 200 nm.

4. The solar cell of any one of claims 1 to 3, wherein, The silver bismuth sulfide mineral type material comprises one or both of a polycrystal and a single crystal.

5. The solar cell as claimed in any one of claims 1 to 4, wherein, The silver bismuth sulfide mineral type material has a band gap of 0.8 eV to 1.4 eV, optionally 0.8 eV to 1.2 eV, more optionally 0.9 eV to 1.1 eV.

6. The solar cell as claimed in any one of claims 1 to 5, wherein, The solar cell comprises: a first electrode; a second electrode; and the silver bismuth sulfide mineral type material disposed between the first electrode and the second electrode.

7. The solar cell as claimed in any one of claims 1 to 6, wherein, The solar cell comprises: a first electrode; a second electrode; and a light absorbing layer disposed between the first electrode and the second electrode, the light absorbing layer comprising the silver bismuth sulfide mineral type material.

8. The solar cell as claimed in any one of claims 1 to 7, wherein, The solar cell comprises a thin film comprising the silver bismuth sulfide mineral type material.

9. The solar cell as claimed in any one of claims 7 to 8, wherein, The light emitting layer or the thin film comprising the silver bismuth sulfide mineral type material has a thickness of 10 nm to 20 μm, optionally 10 nm to 10 μm; more optionally 30 nm to 500 nm or 50 nm to 200 nm.

10. The solar cell of claim 7, wherein, The solar cell further comprises one or both of a first charge transport layer and a second charge transport layer; The first charge transport layer is located between the first electrode and the light absorbing layer; The second charge transport layer is located between the second electrode and the light absorbing layer; One of the first charge transport layer and the second charge transport layer is an electron transport layer and the other is a hole transport layer.

11. The solar cell of claim 10, wherein, The electron transport layer comprises one or more of the following materials and derivatives, dopants and passivated materials thereof: [6,6]-phenyl C61 butyric acid methyl ester, [6,6]-phenyl C71 butyric acid methyl ester, fullerene C61, fullerene C60, fullerene C70, tin dioxide, zinc oxide, perylene imide materials and naphthalene imide materials.

12. The solar cell of any one of claims 10 to 11, wherein, The electron transport layer has a thickness of 1 nm to 300 nm, optionally 1 nm to 100 nm.

13. The solar cell as claimed in any one of claims 10 to 12, wherein, The hole transport layer comprises one or more of the following materials and derivatives, dopants and passivated materials thereof: nickel oxide, molybdenum oxide, molybdenum sulfide, cuprous oxide, cuprous iodide, cuprous thiocyanate, 2,2',7,7'-tetrakis(N,N-p-methoxyphenylamine)-9,9'-spirobifluorene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, poly-3-hexylthiophene, methoxytriphenylamine-fluoromethylformamide, triptycene-core triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-4-aniline carbazole-spirofluorene, polythiophene and self-assembled monomolecular material.

14. The solar cell as claimed in any one of claims 10 to 13, wherein, The hole transport layer has a thickness of 1 nm to 500 nm, optionally 1 nm to 300 nm or 1 nm to 100 nm.

15. The solar cell of claim 7, wherein, One or more of the following conditions are met: (1) the solar cell further comprises a first passivation layer disposed on a side of the light absorbing layer facing the first electrode, optionally, the first passivation layer is disposed on at least a portion of a surface of the light absorbing layer facing the first electrode; (2) the solar cell further comprises a second passivation layer disposed on a side of the light absorbing layer facing the second electrode, optionally, the second passivation layer is disposed on at least a portion of a surface of the light absorbing layer facing the second electrode.

16. The solar cell as claimed in any one of claims 7, 10 to 15, wherein, One or more of the following conditions are met: (1) the solar cell comprises a first passivation layer and a first charge transport layer, the first passivation layer is disposed between the first charge transport layer and the light absorbing layer; (2) the solar cell comprises a second passivation layer and a second charge transport layer, the second passivation layer is disposed between the light absorbing layer and the second charge transport layer.

17. The solar cell of any one of claims 15 to 16, wherein, The thickness of the first passivation layer and the second passivation layer is independently 1 nm to 20 nm.

18. The solar cell as claimed in any one of claims 15 to 17, wherein, The material in the first passivation layer and / or the second passivation layer is anionically or cationically chemically bonded to the material of the light absorbing layer.

19. The solar cell as claimed in any one of claims 7, 10 to 18, wherein, One or more of the following conditions are met: (1) the solar cell further comprises a first blocking layer disposed between the first electrode and the light absorbing layer; (2) the solar cell further comprises a second blocking layer disposed between the light absorbing layer and the second electrode; wherein one of the first blocking layer and the second blocking layer is an electron blocking layer, and the other is a hole blocking layer.

20. The solar cell as claimed in any one of claims 7, 10 to 19, wherein, One or more of the following conditions are met: (1) the solar cell comprises a first blocking layer and a first charge transport layer, the first blocking layer is disposed between the first electrode and the first charge transport layer, and / or, the first blocking layer is disposed between the first charge transport layer and the light absorbing layer; (2) the solar cell comprises a second blocking layer and a second charge transport layer, the second blocking layer is disposed between the second electrode and the second charge transport layer, and / or, the second blocking layer is disposed between the light absorbing layer and the second charge transport layer.

21. The solar cell as claimed in any one of claims 16 to 19, wherein, One or more of the following conditions are met: (1) the solar cell comprises a first blocking layer and a first passivation layer, the first blocking layer is disposed between the first electrode and the first passivation layer; (2) the solar cell comprises a second blocking layer and a second passivation layer, the second blocking layer is disposed between the second passivation layer and the second electrode.

22. The solar cell of claim 19, wherein, One or more of the following conditions are met: (1) the LUMO energy level of the material of the hole blocking layer is lower than the conduction band minimum CBM of the material of the light absorbing layer, and the HOMO energy level of the material of the hole blocking layer is lower than the valence band maximum VBM of the material of the light absorbing layer; optionally, the hole blocking layer comprises one or more of 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, SnO2, ZnO, and cerium oxide; (2) the LUMO energy level of the material of the electron blocking layer is higher than the conduction band bottom CBM of the material of the light absorbing layer, and the HOMO energy level of the material of the electron blocking layer is higher than the valence band top VBM of the material of the light absorbing layer; optionally, the electron blocking layer comprises one or more of molybdenum oxide, vanadium oxide, LiF and Al2O3.

23. The solar cell as claimed in any one of claims 19 to 22, wherein, The thickness of the first blocking layer and the second blocking layer is independently 0.5 nm to 50 nm.

24. The solar cell as claimed in any one of claims 10 to 23, wherein, The solar cell comprises the first electrode, the first blocking layer, the first charge transport layer, the light absorbing layer, the second charge transport layer, the second blocking layer and the second electrode which are stacked.

25. The solar cell as claimed in any one of claims 10 to 24, wherein, The solar cell comprises the first electrode, the first blocking layer, the first charge transport layer, the first passivation layer, the light absorbing layer, the second passivation layer, the second charge transport layer, the second blocking layer and the second electrode which are stacked.

26. The solar cell as claimed in any one of claims 6 to 7, 10 to 25, wherein, The material of the first electrode and the second electrode independently comprises one or more of inorganic conductive material, organic conductive material and organic-inorganic hybrid conductive material.

27. The solar cell of claim 26, wherein, One or more of the following conditions are met: (1) the inorganic conductive material comprises one or more of carbon material, metal material and alloy thereof, and transparent conductive metal oxide; (2) the organic conductive material comprises one or more of polyacrylic acid, polyimide, polyaniline, polythiophene, polypyrrole and derivatives thereof.

28. The solar cell as claimed in any one of claims 6 to 7, 10 to 26, wherein, At least one of the first electrode and the second electrode is a light-transmitting electrode.

29. The solar cell as claimed in any one of claims 10 to 28, wherein, The solar cell comprises the first electrode, the first charge transport layer, the light absorbing layer, the second charge transport layer and the second electrode which are stacked, and the first electrode is a light-transmitting electrode; wherein, The first charge transport layer is an electron transport layer, and the second charge transport layer is a hole transport layer; or The first charge transport layer is a hole transport layer, and the second charge transport layer is an electron transport layer.

30. The solar cell as claimed in any one of claims 10 to 29, wherein, The solar cell comprises the first electrode, the first blocking layer, the hole transport layer, the light absorbing layer, the electron transport layer, the second blocking layer and the second electrode which are stacked, and the first electrode is a light-transmitting electrode.

31. The solar cell as claimed in any one of claims 10 to 30, wherein, The solar cell comprises the first electrode, the first blocking layer, the hole transport layer, the first passivation layer, the light absorbing layer, the second passivation layer, the electron transport layer, the second blocking layer and the second electrode which are stacked, and the first electrode is a light-transmitting electrode.

32. The solar cell as claimed in any one of claims 1 to 31, wherein, The silver bismuth sulfide mineral type material has a chemical formula of MX, M is a cation, and X is an anion; optionally, X comprises one divalent anion or a plurality of divalent anions; optionally, M comprises one or more cations.

33. The solar cell of claim 32, wherein, The divalent anion comprises one or more of divalent inorganic anion and divalent organic anion.

34. The solar cell of claim 33, wherein, The divalent inorganic anion comprises one or more of O 2- , S 2- , Se 2- , and Te 2- ; optionally comprising S 2- .

35. The solar cell as claimed in any one of claims 32 to 34, wherein, M comprises one or more of metal cation and organic cation; Optionally, the metal cation comprises Ag + , Li + , Na + , K + , Rb + , Cs + , Cu + , Ni 2+ , Cu 2+ , Zn 2+ , Co 2+ , Bi 3+ , Ga 3+ , In 3+ , Sb 3+ , Al 3+ , Tl 3+ , and Co 3+ . Optionally, the organic cation comprises at least one of organic amine ion, formamidinium ion and imidazolium ion.

36. The solar cell of claim 32, wherein, M comprises a first cation A and a second cation B which are different in element species; Optionally, the first cation A and the second cation B each independently comprise one or more of Ag + , Li + , Na + , K + , Rb + , Cs + , Cu + , Ni 2+ , Cu 2+ , Zn 2+ , Co 2+ , Bi 3+ , Ga 3+ , In 3+ , Sb 3+ , Al 3+ , Tl 3+ , and Co 3+ . Optionally, the first cation A comprises Ag + , Li + , Na + , K + , Rb + , and Cs + . Optionally, the second cation B comprises Bi 3+ .

37. The solar cell of claim 36, wherein, The silver bismuth sulfide mineral type material includes a chemical formula of A x B y The compound of X2, wherein x and y are values that make A x B y The compound of X2 has an overall valence of 0.

38. The solar cell of any of claims 36-37, wherein, The silver bismuth sulphosalts type material comprises a compound of formula ABX2, the first cation A being a monovalent cation, the second cation B being a trivalent cation, X being a divalent anion.

39. The solar cell of claim 36, wherein, The silver bismuth sulfide mineral type material includes a compound of the formula A x B y X' z X" 2-z where X includes a divalent anion X' and a divalent anion X", and z is 0 to 2.

40. The solar cell of claim 39, wherein, The silver bismuth sulfide mineral type material comprises a compound of the formula ABX' z X" 2-z The first cation A is a monovalent cation, the second cation B is a trivalent cation, X comprises a divalent anion X' and a divalent anion X", and z is 0 to 2.

41. The solar cell as claimed in any one of claims 39 to 40, wherein, one or more of the following conditions are fulfilled: (1) the element species of the divalent anion X' and the divalent anion X" are different; (2) X' is S 2- , z is not 0; (3) X" is selected from one or more of O 2- , Se 2- , and Te 2- .

42. The solar cell as claimed in any one of claims 1 to 40, wherein, The silver bismuth sulfide mineral type materials include one or more of AgBiS2, AgBiS z O 2-z , AgBiS z Se 2-z , AgBiS z Te 2-z wherein z is 0-2.

43. A photovoltaic module comprising the solar cell of any one of claims 1 to 42.

44. A photovoltaic system comprising one or more of the solar cell of any one of claims 1 to 42 and the photovoltaic module of claim 43.

45. An electrically powered device comprising one or more of the solar cell of any one of claims 1 to 42 and the photovoltaic module of claim 43.

46. An electricity generating device comprising one or more of the solar cell of any one of claims 1 to 42 and the photovoltaic module of claim 43.

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