Substrate processing apparatus, substrate processing method, and article manufacturing method

Abstract

A substrate processing apparatus for processing an organic EL substrate includes a measurement unit that measures a pressure inside a chamber for processing the organic EL substrate, a supply unit that supplies a gas for setting the inside of the chamber to a predetermined environment, an exhaust unit that exhausts the gas from the chamber, and a control unit that controls the supply unit or the exhaust unit based on the pressure measured by the measurement unit so that the pressure inside the chamber becomes a set pressure range. The control unit changes the pressure range in a manner that the pressure range becomes narrower with the passage of time, and controls an adjustment range of a supply amount of the gas by the supply unit or an adjustment range of an exhaust amount of the gas by the exhaust unit in a manner that the adjustment range decreases with the passage of time based on the changed pressure range.

Description

Technical Field

[0001] The disclosed technologies involve substrate processing apparatus, substrate processing methods, and article manufacturing methods. Background Technology

[0002] The manufacturing methods for organic EL displays, which utilize organic light-emitting diodes (OLEDs) that emit light using electronic materials called organic EL (Electroluminescence), can be broadly divided into two types: vacuum evaporation and coating. While vacuum evaporation can maintain a low-oxygen and low-dew-point environment (a dew point temperature below 0 degrees Celsius is called "low dew point"), the cost of the equipment can be high because the vacuum apparatus requires specialized components or vacuum pumps with vacuum tolerance. Furthermore, the use of high-precision pixel evaporation masks in vacuum evaporation makes the fabrication of large-area evaporation masks, necessary for manufacturing large displays, difficult.

[0003] Therefore, as an alternative to vacuum evaporation for manufacturing large displays, there is a coating method that utilizes printing technologies such as inkjet printing to coat liquid organic EL materials onto a substrate under atmospheric pressure. Development is underway for a coating-based organic EL display manufacturing method that, after coating the liquid organic EL material onto the substrate, dries it to form a uniform thin film, thereby forming the component, thus improving production efficiency and performance.

[0004] Organic EL displays are susceptible to degradation in product characteristics (efficiency, lifespan, etc.) due to the influence of the manufacturing environment during the manufacturing process. Therefore, to suppress degradation, manufacturing in a low-oxygen and low-dew-point environment is required. Thus, in the manufacturing of coating-type organic EL displays, to create a low-dew-point and low-oxygen environment with moisture content below 1 ppm and oxygen content below 1 ppm, the processing chamber (hereinafter referred to as the "chamber") where the substrate is processed needs to be filled with an inactive gas. In the following description, a gas with an active gas concentration as close to 0 ppm as possible is referred to as an "inactive gas".

[0005] Patent Document 1 discloses a configuration for a substrate processing apparatus for processing organic EL substrates, comprising: a configuration in which a circulating purification device for an inactive gas is connected to a chamber to supply nitrogen gas into the chamber; and a configuration in which nitrogen gas is introduced into the chamber through a high-performance filter. The organic EL display manufacturing apparatus disclosed in Patent Document 1 includes: a configuration in which the introduced nitrogen gas is returned to the high-performance filter for circulation; and a configuration in which the chamber is set to a positive pressure relative to atmospheric pressure.

[0006] Furthermore, Patent Document 2 discloses the following gas replacement system configuration: a circulating purification device connected to a chamber for inactive gas, capable of maintaining a low-oxygen and low-dew-point environment. In the gas replacement system of Patent Document 2, during maintenance or upkeep, to introduce dry air into the chamber and expel moisture from the device, the metal catalyst section for removing oxygen can be closed by a valve, allowing only the molecular sieve section for adsorbing and removing moisture to circulate independently. In cases where multiple chambers exist, a design has been implemented to shorten downtime by allowing a portion to undergo atmospheric replacement independently.

[0007] Prior art literature

[0008] Patent documents

[0009] Patent Document 1: Japanese Patent Application Publication No. 2013-140721

[0010] Patent Document 2: Japanese Patent Application Publication No. 2020-193765 Summary of the Invention

[0011] The problem that the invention aims to solve

[0012] However, in the manufacturing apparatus for organic EL elements using a coating method, pressure fluctuations occur within the chamber due to the internal pressure control of the inactive gas circulation purification unit. For liquid organic EL materials, pressure changes within the chamber lead to variations in solvent evaporation and evaporation rates. Because the flow behavior of the liquid organic EL material changes due to Marangoni convection and other factors, differences in film thickness appear for each dried substrate. To suppress the deviation of the dried film on each substrate caused by variations in solvent evaporation rates, it is necessary to suppress pressure fluctuations within the organic EL element manufacturing apparatus.

[0013] When adjusting the pressure inside the chamber, the supply of inactive gases can be controlled by opening and closing a valve to adjust the gas supply volume based on whether the pressure reading from the sensor inside the chamber deviates below a supply threshold. Similarly, the exhaust of inactive gases from the chamber can be controlled by opening and closing a valve to adjust the exhaust volume based on whether the pressure reading from the sensor deviates above an exhaust threshold. Because of this supply and exhaust control, adjusting the pressure inside the chamber will cause fluctuations in the pressure within the chamber.

[0014] On the other hand, if the pressure inside the chamber becomes negative relative to the surrounding environment, the surrounding atmospheric gas will be drawn in through the tiny gaps in the chamber, sometimes making it impossible to maintain a high level of cleanliness or a low-oxygen and low-dew-point environment. Therefore, it is necessary to maintain the pressure inside the chamber at a pressure slightly higher than the pressure outside chamber 1 (hereinafter also referred to as "slight positive pressure"), and to control the supply and exhaust of inactive gases.

[0015] In view of the aforementioned issues, the purpose of the disclosed technology is to provide a technology that facilitates the processing of organic EL substrates.

[0016] Solution for solving the problem

[0017] According to one aspect of the disclosed technology, a substrate processing apparatus processes an organic EL substrate, the substrate processing apparatus comprising: The measuring unit measures the pressure inside the chamber where the organic EL substrate is processed. A supply unit that supplies gas for setting the interior of the aforementioned chamber into a specified environment; An exhaust section, which discharges the gas from the aforementioned chamber; and The control unit controls the supply unit or the exhaust unit based on the pressure measured by the measuring unit, so that the pressure inside the chamber is within a set pressure range. The aforementioned control unit changes the pressure range in a manner that narrows over time, and... Based on the modified pressure range, the adjustment range of the gas supply from the supply unit or the adjustment range of the gas exhaust from the exhaust unit is controlled in a manner that decreases over time.

[0018] The effects of the invention

[0019] Based on the disclosed technology, techniques that facilitate the processing of organic EL substrates can be provided.

[0020] For example, a technique can be provided to maintain a low-oxygen and low-dew-point environment simultaneously at atmospheric pressure in the substrate processing environment of an organic EL device manufacturing apparatus using a coating method. Additionally, a technique can be provided to suppress the magnitude and slope (rate of change) of pressure fluctuations that may occur during pressure control. In the disclosed technology, by providing this technique, the processing of organic EL substrates within a chamber can be performed under stable pressure. Attached Figure Description

[0021] Figure 1 This is a diagram showing the configuration of the substrate processing apparatus according to an embodiment.

[0022] Figure 2 This is a timing diagram of pressure control in the substrate processing apparatus of the embodiment.

[0023] Figure 3 This is a timing diagram of pressure control in the case where the pressure control involved in the implementation method is not implemented.

[0024] Figure 4 This is a diagram illustrating the flow of gas supply processing in the substrate processing apparatus of the embodiment, where gas is supplied to the chamber.

[0025] Figure 5 This is a diagram illustrating the process of exhaust gas treatment in the substrate processing apparatus of the embodiment, where gas is discharged from the chamber.

[0026] Figure 6 This is a diagram illustrating the process of changing the setting of the pressure range during the stabilization period in the substrate processing apparatus according to the embodiment. Detailed Implementation

[0027] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Furthermore, the following embodiments do not limit the invention as described in the claims. Several features are described in the embodiments, but not all of these features are essential components of the invention, and other features can be combined arbitrarily. Furthermore, in the accompanying drawings, the same or identical components are labeled with the same reference numerals, and repeated descriptions are omitted.

[0028] Figure 1 This diagram illustrates the configuration of a substrate processing apparatus 100 for processing organic EL substrates according to an embodiment. The substrate processing apparatus 100 includes a chamber 1 forming the apparatus frame. The chamber 1 is a component defining an internal space 101 separated from the external space, and it surrounds the internal space 101. Figure 1 The overall configuration of the substrate processing apparatus 100 shown is also referred to as an organic EL display manufacturing apparatus or a pressure control system for controlling the pressure inside the chamber 1.

[0029] exist Figure 1 In the configuration of the substrate processing apparatus 100 for processing organic EL substrates shown, the internal space 101 of the chamber 1 may include a group of processing chambers connected to multiple processing chambers for performing various processes. This group of processing chambers may include, for example, processing chambers connected to processing chambers for performing various processes such as a pre-processing process for the substrate, a transport process for transporting the substrate between processing chambers, and a coating process for obtaining a coated substrate by applying or depositing a solution film onto the substrate. The internal space 101 on the side where the group of processing chambers for performing various processes is located is referred to as the "interior" of the chamber 1, and the space on the side where the group of processing chambers is not located is referred to as the "exterior" of the chamber 1.

[0030] The substrate processing apparatus 100 may be configured to perform the following process: inside the chamber 1, for example by using an inkjet printing apparatus or a slot coater, to deposit or coat a solution film (a solution including a solute and solvent for forming an organic film) on the substrate. Alternatively, the substrate processing apparatus 100 may be configured to perform a drying process to dry the solution film on the coated substrate.

[0031] The solution film coated on the substrate can be, for example, a film composed of a solution containing a solute and a solvent for forming an organic film of organic electronic materials. The organic film can be, for example, any one of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer of an organic EL device. The fabrication of an organic EL device may include the process of forming various organic films, such as the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer, on a substrate.

[0032] The substrate processing apparatus 100 for processing organic EL substrates is an apparatus capable of controlling the internal pressure of a chamber 1 to a slightly positive pressure and maintaining a low-oxygen, low-dew-point inactive gas environment for performing prescribed substrate processing. When controlling the internal pressure of the chamber 1, the substrate processing apparatus 100 can perform pressure control to suppress the amplitude and slope (rate of change) of pressure fluctuations within the chamber 1. The configuration of the apparatus in the substrate processing apparatus 100 and the processing related to pressure control will be described below.

[0033] (Configuration of the substrate processing apparatus 100 for processing organic EL substrates)

[0034] Chamber 1 is connected to the inert gas circulation purification apparatus 6 (hereinafter also referred to as "circulation purification apparatus 6") via gas piping 140. Gas piping 140 includes: a gas supply piping 141 for supplying inert gas to chamber 1; a gas exhaust piping 142 for discharging inert gas from chamber 1; and a bypass piping 12. The bypass piping 12 is provided between the circulation purification apparatus 6 and chamber 1, connecting the gas supply piping 141 and the gas exhaust piping 142.

[0035] The circulating purification apparatus 6 comprises a purification section 7 and valves 15 and 16. By switching the opening and closing of valves 15 and 16, the flow path of the inactive gas can be switched within the circulating purification apparatus 6. The purification section 7 includes: a nitrogen purification section containing a metal catalyst such as a copper catalyst or a platinum catalyst for removing oxygen from the inactive gas; and a moisture removal section filled with a molecular sieve containing dry material for adsorbing and removing moisture from the gas.

[0036] Blower 5 (air blower) draws out the inert gas from chamber 1 and supplies it to the circulating purification device 6. The purification section 7 of the circulating purification device 6 removes oxygen and moisture from the inert gas supplied by blower 5 through a nitrogen purification section and a moisture removal section. The circulating purification device 6 then returns the oxygen- and moisture-free inert gas to chamber 1. Thus, the oxygen- and moisture-free inert gas is configured to circulate between chamber 1 and the circulating purification device 6.

[0037] In addition, the pressure measuring unit 3 is connected to the chamber 1, measures the pressure of the internal space 101 of the chamber 1, and outputs a signal indicating the measurement result to the control unit 2.

[0038] The gas supply unit 89 has a valve 8 and an opening adjustment throttle valve 9 as its internal components. A gas supply line 90 supplies inert gas from a gas supply source (not shown) to the gas supply unit 89. The gas supply unit 89 supplies inert gas to create a specified environment inside the chamber 1. If moisture or oxygen, which is normally present in the air, enters the organic EL element, the material will deteriorate. By creating an inert gas environment inside the chamber 1, the deterioration of the organic EL element can be suppressed, and the internal environment of the chamber 1 can be set to a low-oxygen and low-dew-point environment, such as moisture below 1 ppm and oxygen below 1 ppm.

[0039] The valve 8 and the opening adjustment throttle valve 9, connected to the gas supply line 90, can be, for example, automatically controllable valves such as air-operated valves or solenoid valves. The control unit 2, described later, can control (adjust) the opening and closing of the valve 8 and the opening of the opening adjustment throttle valve 9 based on control commands. The valve 8 is connected to the gas supply line 90, and by opening the valve 8, it is in a state where inert gas can be supplied to the opening adjustment throttle valve 9. The opening adjustment throttle valve 9 can control (adjust) its throttling opening based on control commands from the control unit 2. By adjusting the opening of the opening adjustment throttle valve 9, the inert gas with a controlled (adjusted) supply flow rate can be supplied to the chamber 1 via the circulating purification device 6.

[0040] The gas exhaust section 111 is connected to the chamber 1 via the circulating purification device 6. The gas exhaust section 111 internally includes a valve 11 and an opening-adjusting throttle valve 10. The valve 11 and the opening-adjusting throttle valve 10, connected to the exhaust gas line 112, are, for example, automatically controllable valves such as air-operated valves or solenoid valves. The control unit 2 can control (adjust) the opening and closing of the valve 11 and the opening degree of the opening-adjusting throttle valve 10 based on control commands. By opening the valve 11, inert gas can be discharged from the exhaust gas line 112. The opening degree of the opening-adjusting throttle valve 10 can be controlled (adjusted) based on control commands from the control unit 2. By adjusting the opening degree of the opening-adjusting throttle valve 10, the inert gas with controlled (adjusted) exhaust flow can be discharged from the exhaust gas line 112.

[0041] The control unit 2 controls various configurations of the board processing apparatus 100. For example, the control unit 2 can control the gas supply unit 89 or the gas exhaust unit 111 based on the pressure of the internal space 101 measured by the pressure measuring unit 3 (pressure measuring sensor). The control unit 2 can also adjust the pressure in the chamber 1 to a predetermined pressure as a target based on the pressure of the internal space 101 measured by the pressure measuring unit 3. For example, the control unit 2 can also control the gas supply unit 89 and the gas exhaust unit 111 based on the pressure of the internal space 101 measured by the pressure measuring unit 3, so that the pressure of the internal space 101 is controlled to be in a slightly positive pressure state between a predetermined upper limit target value and a lower limit target value (pressure range).

[0042] (Gas supply and processing flow)

[0043] Figure 4 This diagram illustrates the gas supply process of supplying inactive gas to chamber 1. In step S41, the pressure of the internal space 101 is measured by the pressure measuring unit 3. The pressure measuring unit 3 outputs a signal indicating the measurement result to the control unit 2.

[0044] In process S42, the control unit 2 compares the measurement results of the pressure measuring unit 3 with the gas supply start pressure. Here, the gas supply start pressure is the reference pressure used to determine the start of the supply of inactive gas relative to the chamber 1.

[0045] In the judgment of process S42, if the measurement result of pressure measuring unit 3 is higher than the gas supply start pressure (S42 - No), the process proceeds. Figure 5 (Gas exhaust treatment). On the other hand, in the determination of process S42, if the measurement result of pressure measuring unit 3 is lower than the gas supply start pressure (S42 - Yes), the process proceeds to process S43.

[0046] In step S43, the control unit 2 opens valve 8 of the gas supply line 90. Then, in step S44, the control unit 2 controls (adjusts) the opening of the opening adjustment throttle valve 9. The control unit 2 adjusts the opening of the gas supply line 90 and the opening of the opening adjustment throttle valve 9 based on the difference between the target pressure (e.g., a lower limit target value) and the measured result (the current pressure of the internal space 101). (Here, the difference represents the absolute value of the difference, and the same applies below.) This adjusts the gas supply amount. By adjusting the gas supply amount, the pressure of the internal space 101 of the chamber 1 can be adjusted. Here, the target pressure is the pressure used in pressure control to maintain a slightly positive pressure between the internal pressure of the chamber 1 and the external pressure. In gas supply processing, it can also be the lower limit of the pressure range that maintains the pressure of the internal space 101 at a slightly positive pressure (lower limit target value).

[0047] Equation (1) shown below is a formula for adjusting the opening (throttling flow) of the opening adjustment throttle valve 9. In equation (1), K1 represents the minimum throttling value (minimum opening) of the opening adjustment throttle valve 9 during supply. P is the measurement result of the pressure measuring unit 3, which represents the current pressure (current pressure) of the internal space 101 of the chamber 1. Ptaget1 is the target pressure of the internal space 101, which can also be used as a lower limit target value, for example.

[0048] β is the operating gain (opening adjustment parameter) used to adjust the opening of the opening-adjusting throttle valve 9. It is a parameter that indicates how sensitively the opening can be adjusted relative to the difference between the current pressure and the target pressure (the absolute value of the difference). By changing the setting of the opening adjustment parameter β, the flow rate of the inactive gas supplied can be adjusted. For example, when the opening of the opening-adjusting throttle valve 9 is to be closed, simply adjust the setting of the opening adjustment parameter β to be smaller. Conversely, when the opening of the opening-adjusting throttle valve 9 is to be opened, simply adjust the setting of the opening adjustment parameter β to be larger.

[0049] Opening degree = K1 × (1 + β × |(P - Ptaget1)| / Ptaget1) (1)

[0050] K1: Minimum throttling value (minimum opening) during supply.

[0051] P: Current pressure in internal space 101 (current pressure)

[0052] Target 1: Target Pressure (Lower Limit Target Value)

[0053] β: Opening adjustment parameter

[0054] The control unit 2 adjusts the opening of the throttle valve 9 based on formula (1), and the gas supply unit 89 adjusts the supply of inactive gas based on the adjusted opening of the throttle valve 9.

[0055] In process S45, the pressure measuring unit 3 measures the pressure in the internal space 101. The pressure measuring unit 3 outputs a signal indicating the measurement result to the control unit 2.

[0056] In step S46, the control unit 2 compares the measurement result of the pressure measuring unit 3 with the gas supply stop pressure. Here, the gas supply stop pressure is the reference pressure used to determine the cessation of the supply of inactive gas to chamber 1. If the measurement result of the pressure measuring unit 3 is lower than the gas supply stop pressure (S46 - No), the process returns to step S44, and the same process is repeated. On the other hand, if the determination in step S46 is that the measurement result of the pressure measuring unit 3 is higher than the gas supply stop pressure (S46 - Yes), the process proceeds to step S47.

[0057] In step S47, the control unit 2 closes the valve 8 of the gas supply line 90. This stops the supply of inactive gas to the chamber 1. Then, in step S48, the control unit 2 returns the opening of the opening adjustment throttle valve 9 to its initial value. The process then returns to step S41, and the same process is repeated. The pressure inside the chamber 101 is measured by the pressure measuring unit 3, and adjustments are made based on the measurement results from the pressure measuring unit 3. Figure 4 The gas supply can be processed.

[0058] (Gas exhaust treatment)

[0059] Figure 5 This diagram illustrates the process of exhausting inactive gas from chamber 1. In step S51, the pressure of the internal space 101 is measured by the pressure measuring unit 3. The pressure measuring unit 3 outputs a signal indicating the measurement result to the control unit 2.

[0060] In process S52, the control unit 2 compares the measurement result of the pressure measuring unit 3 with the gas exhaust start pressure. Here, the gas exhaust start pressure is the reference pressure used to determine the start of exhaust from the inactive gas in chamber 1.

[0061] In the judgment of process S52, if the measurement result of pressure measuring unit 3 is lower than the gas exhaust start pressure (S52 - No), the process proceeds. Figure 4 (Gas supply processing). On the other hand, in the determination of process S52, if the measurement result of pressure measuring unit 3 is higher than the gas exhaust start pressure (S52 - Yes), the process proceeds to process S53.

[0062] In step S53, the control unit 2 opens the valve 11 of the exhaust gas line 112. Then, in step S54, the control unit 2 controls (adjusts) the opening of the opening adjustment throttle valve 10. The control unit 2 adjusts the opening of the exhaust gas line 112 and the opening of the opening adjustment throttle valve 10 based on the difference (absolute value) between the target pressure (e.g., the upper limit target value) and the measured result (the current pressure of the internal space 101), thereby adjusting the gas exhaust volume. By adjusting the gas exhaust volume, the pressure of the internal space 101 of the chamber 1 is adjusted. Here, the target pressure is the pressure used in pressure control to maintain a slightly positive pressure between the internal pressure of the chamber 1 and the external pressure. In gas exhaust processing, it can also be the upper limit of the pressure range that maintains the pressure of the internal space 101 at a slightly positive pressure (the upper limit target value).

[0063] Equation (2) shown below is a formula for adjusting the opening (throttling flow) of the opening adjustment throttle valve 10. In equation (2), K2 represents the minimum throttling value (minimum opening) of the opening adjustment throttle valve 10 during exhaust. P is the measurement result of the pressure measuring unit 3, representing the current pressure (current pressure) of the internal space 101 in the chamber 1. Ptaget2 is the target pressure of the internal space 101, which can also be used as the upper limit target value, for example.

[0064] γ is the operating gain (opening adjustment parameter) used to adjust the opening of the opening-adjusting throttle valve 10. It is a parameter that indicates how sensitively the opening can be adjusted relative to the difference between the current pressure and the target pressure (the absolute value of the difference). By changing the setting of the opening adjustment parameter γ, the flow rate of the discharged inactive gas can be adjusted. For example, when the opening of the opening-adjusting throttle valve 10 is to be closed, it is only necessary to adjust the setting of the opening adjustment parameter γ to be smaller. Conversely, when the opening of the opening-adjusting throttle valve 10 is to be opened, it is only necessary to adjust the setting of the opening adjustment parameter γ to be larger.

[0065] Opening degree = K2 × (1 + γ × |(P - Ptaget2)| / Ptaget2) (2)

[0066] K2: Minimum throttling value (minimum opening) during exhaust.

[0067] P: Current pressure in internal space 101 (current pressure)

[0068] Ptaget2: Target Pressure (Upper Target Value)

[0069] γ: Opening adjustment parameter

[0070] The control unit 2 controls (adjusts) the opening of the throttle valve 10 based on formula (2), and the gas exhaust unit 111 adjusts the opening of the throttle valve 10 based on the adjusted opening to adjust the exhaust volume of the inactive gas.

[0071] In process S55, the pressure measuring unit 3 measures the pressure in the internal space 101. The pressure measuring unit 3 outputs a signal indicating the measurement result to the control unit 2.

[0072] In step S56, the control unit 2 compares the measurement result of the pressure measuring unit 3 with the gas exhaust stop pressure. Here, the gas exhaust stop pressure is the reference pressure used to determine the cessation of exhaust from the inactive gas in chamber 1. If the measurement result of the pressure measuring unit 3 is higher than the gas exhaust stop pressure (S56 - No), the process returns to step S54, and the same process is repeated. On the other hand, if the determination in step S56 is that the measurement result of the pressure measuring unit 3 is lower than the gas exhaust stop pressure (S56 - Yes), the process proceeds to step S57.

[0073] In step S57, the control unit 2 closes valve 11 of the exhaust gas pipeline 112. This stops the exhaust of inactive gas from chamber 1. Then, in step S58, the control unit 2 returns the opening of the opening adjustment throttle valve 10 to its initial value. The process then returns to step S51, and the same process is repeated. The pressure inside chamber 101 is measured by the pressure measuring unit 3, and adjustments are made based on the measurement results from the pressure measuring unit 3. Figure 5 The gas exhaust process can be completed.

[0074] When performing maintenance or adjustments on the substrate processing apparatus 100, valves 15 and 16 in the inactive gas circulation purification unit 6 are closed to protect the catalyst in order to return the inactive gas environment to the atmospheric environment. Then, valve 13 of the air replacement line 115 is opened, and the opening of the air replacement line 115 adjustment throttle valve 14 is adjusted to perform air replacement. The valve 13 and the opening adjustment throttle valve 15 of the air replacement line 115 are, for example, automatically controllable valves such as air-operated valves or solenoid valves. The control unit 2 can control (adjust) the opening and closing of valve 13 and the opening of the opening adjustment throttle valve 15 based on control commands.

[0075] Furthermore, for the circulating gas output from the inactive gas circulating purification unit 6, the flow rate adjustment unit 4 (flow rate adjustment throttle valve) provided on the gas supply piping 141 adjusts the amount flowing to the bypass piping 12 and the amount flowing to the chamber 1, thereby reducing the instability of the flow after the blower 5 is first started. The control unit 2 can control (adjust) the flow rate of the flow rate adjustment unit 4 (flow rate adjustment throttle valve) based on control commands.

[0076] As an example of flow control relying on the flow regulating unit 4, in the initial state after the blower 5 has just started, the throttling opening of the flow regulating unit 4 can be closed to increase the flow rate of gas flowing in the bypass pipe 12. Alternatively, in a stable state where the blower 5 is operating steadily, the throttling opening of the flow regulating unit 4 can be opened to decrease the flow rate of gas flowing in the bypass pipe 12 and increase the flow rate of gas flowing towards the chamber 1.

[0077] For example, control unit 2 may close the throttling opening of flow adjustment unit 4 before a predetermined time has elapsed since the start of gas supply, thereby increasing the flow rate of gas flowing in bypass pipe 12 and decreasing the flow rate towards chamber 1. Alternatively, control unit 2 may open the throttling opening of flow adjustment unit 4 after a predetermined time has elapsed, thereby controlling the gas supply to decrease the flow rate of gas flowing in bypass pipe 12 and increase the flow rate towards chamber 1.

[0078] The chamber 1 has a sealed structure in which the internal space 101 is sealed. However, if the pressure inside the chamber 1 becomes negative relative to the surrounding environment, ambient air gas will be drawn in through the tiny gaps in the chamber 1, and it may also lead to a situation where a high level of cleanliness or a low-oxygen and low-dew-point environment cannot be maintained. Therefore, it is necessary to maintain the pressure inside the chamber 1 at a pressure state (slight positive pressure) that is slightly higher than the external pressure.

[0079] On the other hand, in the substrate processing apparatus 100 for processing organic EL substrates, where a liquid organic EL material is coated onto a substrate and then dried to form a uniform thin film, the pressure inside chamber 1 can change. If the pressure inside the chamber changes, the evaporation rate of the solvent in the liquid organic EL material changes, resulting in differences in film thickness for each dried substrate. Therefore, in order to suppress pressure fluctuations that may occur during pressure control, it becomes necessary to suppress the magnitude and slope (rate of change) of the pressure fluctuations. That is, it is therefore necessary to control the supply and exhaust of inactive gases to maintain a slightly positive pressure inside the chamber and suppress the magnitude and slope (rate of change) of the pressure fluctuations.

[0080] Figure 2 This is a timing diagram of the pressure control within the chamber of the substrate processing apparatus 100 according to the embodiment. Figure 2 2A, 201 indicates the pressure variation within the internal space 101 of chamber 1 when the exhaust and supply of inactive gas are alternately repeated. Figure 2 In 2A, exhaust-on indicates the start of exhaust, and exhaust-off indicates the end of exhaust. Similarly, supply-on indicates the start of supply, and supply-off indicates the end of supply.

[0081] Here, the pressure at the exhaust-on point is Figure 5 The gas exhaust start pressure described in process S52, and the pressure at the exhaust-off point are... Figure 5 The gas exhaust stop pressure is described in process S56. Additionally, the pressure at the supply-on point is... Figure 4 The gas supply start pressure described in process S42, and the pressure at the supply-off point are... Figure 4 The gas supply stop pressure is described in process S46.

[0082] After the circulation of the inactive gas relying on the circulating purification device 6 begins, during the period when the flow of the inactive gas circulation is unstable (the initial start-up period: for example, a predetermined time of about 15 minutes), the pressure range of the internal space 101 of chamber 1 is preset. For example, as Figure 4 , Figure 5 As explained, a pressure limit (upper limit target value) and a pressure limit (lower limit target value) within a pressure range that maintains the pressure in the internal space 101 at a slightly positive pressure are preset. Furthermore, by repeatedly adjusting the supply and exhaust of inactive gas between the upper limit target value and the lower limit target value, pressure fluctuations (upper and lower pressure fluctuations) are generated in the internal space 101 of chamber 1.

[0083] Control unit 2 changes the pressure range by narrowing it over time, and based on the changed pressure range, controls the adjustment range of the gas supply from gas supply unit 89 or the adjustment range of the gas exhaust from gas exhaust unit 111 by decreasing it over time. During the initial startup period, this can also be done as follows: Figure 2 Similar to the dashed lines 202 and 203 in 2A, the pressure range between the initial upper limit target value and the initial lower limit target value is pre-set to a pressure range of approximately 500~300 Pa.

[0084] Furthermore, during the stabilization period after the circulation of the inactive gas has stabilized, the upper target value is gradually brought closer to the lower target value, and the pressure range between the upper and lower target values ​​(e.g., a pressure range below 100 Pa) is adjusted to be narrower than the pressure range set at the initial value (e.g., a pressure range of approximately 500 to 300 Pa). The control unit 2 controls the gas supply (supply amount) relying on the gas supply unit 89 or the gas exhaust (exhaust amount) relying on the gas exhaust unit 111, so that the difference between the upper and lower target values ​​(the absolute value of the difference) becomes the changed pressure range (e.g., a pressure range below 100 Pa). During the stabilization period, by gradually narrowing the pressure range set at the initial value over time, the magnitude of pressure fluctuations (pressure ripples) can be suppressed.

[0085] Figure 3This is a timing diagram of pressure control within the chamber in a case where the pressure control involved in the implementation method is not carried out (comparative example). Figure 3 3A, 301 indicates the pressure variation in the internal space 101 of chamber 1 when the exhaust and supply of inactive gas are alternately repeated. Dashed lines 302 and 303 indicate the pressure range between the initial upper limit target value and the initial lower limit target value. Figure 3 3B refers to the exhaust opening of the gas exhaust section 111. Figure 3 In the comparative example 3B, the exhaust opening 304 is constant during the initial startup and the stabilization period. Figure 3 3C refers to the supply opening degree of the gas supply unit 89. Figure 3 In the 3C comparative example, the supply opening degree 305 is constant during the initial startup phase and the stable period.

[0086] like Figure 3 As with 3A, after the circulation of inert gas stabilizes, simply narrowing the pressure range by gradually bringing the upper target value closer to the lower target value is insufficient. This is because if the pressure range between the upper and lower target values ​​falls below a certain value, the supply and exhaust of inert gas will be frequently repeated, inevitably causing pressure fluctuations.

[0087] Therefore, under the pressure control of chamber 1 in this embodiment, such as Figure 2 As in 2B, the opening of the exhaust gas pipeline adjustment throttle valve 10 is adjusted based on the difference (absolute value of the difference) between the target pressure (upper limit target value) and the current pressure of the internal space 101 measured by the pressure measuring unit 3 (current pressure). Alternatively, the opening adjustment of the opening adjustment throttle valve 10 can be slowed down as the upper limit target value approaches the lower limit target value, based on the difference (absolute value of the difference) between the target value and the current pressure of the internal space 101. It can also be as follows... Figure 2 As shown in 2B, the exhaust opening 204 is controlled to decrease over time during the stable period.

[0088] For example, under a stable circulating flow condition, it can also be controlled to be at the maximum opening area S1 of the throttle valve 10. MAX The adjustment range of the opening is limited. For example, it can also be controlled such that the adjustment range of the opening is within the maximum opening area S1 of the throttle valve 10. MAX The exhaust opening is adjusted within a restricted range (e.g., within 25% of the maximum open area). By controlling the adjustment range of the exhaust opening within the restricted range, the slope (rate of change) of pressure with respect to time can be suppressed.

[0089] Furthermore, under the pressure control of chamber 1 in this embodiment, the supply is also the same, such as... Figure 2 As in 2C, the opening of the gas supply line adjustment throttle valve 9 is adjusted based on the difference (absolute value of the difference) between the target pressure (lower target value) and the current pressure of the internal space 101 measured by the pressure measuring unit 3 (current pressure). Alternatively, the opening of the adjustment throttle valve 9 can be slowed down as the upper target value approaches the lower target value, based on the difference (absolute value of the difference) between the target value and the current pressure of the internal space 101. It can also be as follows... Figure 2 As shown in 2C, the supply opening of 205 is controlled to decrease over time during the stable period.

[0090] For example, under a stable circulating flow condition, it can also be controlled to the maximum opening area S2 of the throttle valve 9. MAX The adjustment range of the opening is limited. For example, it can also be controlled such that the adjustment range of the opening is within the maximum opening area S2 of the throttle valve 9. MAX The supply opening is adjusted within a restricted range (e.g., within 25% of the maximum open area). By controlling the adjustment range to suppress the supply opening, the slope (rate of change) of pressure with respect to time can be suppressed.

[0091] Furthermore, during device operation, the control unit 2 can control the gas supply amount via the gas supply unit 89 by setting different values ​​for the gas supply start pressure and the gas supply stop pressure, and it can also control the gas exhaust amount via the gas exhaust unit 111 by setting different values ​​for the gas exhaust start pressure and the gas exhaust stop pressure. That is, it is also possible to add variations such as setting different values ​​for the exhaust start pressure (gas exhaust start pressure) and the exhaust stop pressure (gas exhaust stop pressure) or different values ​​for the supply start pressure (gas supply start pressure) and the supply stop pressure (gas supply stop pressure).

[0092] The relationship between the gas exhaust start pressure and the gas exhaust stop pressure can be arbitrarily set. Similarly, the relationship between the gas supply start pressure and the gas supply stop pressure can also be arbitrarily set. There is a tendency for the pressure in the internal space 101 to gradually decrease due to a slight leak in chamber 1. To suppress frequent pressure control, the gas exhaust stop pressure (exhaust-off) can be set higher than the gas exhaust start pressure (exhaust-on). Conversely, the gas supply stop pressure (supply-off) can be set higher than the gas supply start pressure (supply-on).

[0093] Figure 6This is a diagram illustrating the process of changing the pressure range setting for the stabilization period. Changing the pressure range for the stabilization period involves altering the pressure range preset during the initial startup of the circulating purification unit 6, which uses inactive gases. Figure 6 In the diagram, processes S61 to S63 represent the initial startup process, process S64 is the termination determination for the initial startup period, and processes S65 to S68 represent the stable period process.

[0094] In process S61, the initial value of the pressure range for the initial start-up of the circulating purification unit 6 is set. The control unit 2 can set the pressure range information obtained through communication with an external device, or it can set the initial pressure range based on the pressure range information input from the input device. Alternatively, the pressure range between the initial upper target value and the initial lower target value can be pre-set to, for example, around 500~300 Pa.

[0095] In process S62, the control unit 2 controls and starts the circulating purification device 6. With the start of the circulating purification device 6, the circulation of inactive gas begins.

[0096] In process S63, the supply process or the exhaust process is repeated. The pressure inside the chamber 101 is measured by the pressure measuring unit 3, and the process is repeated based on the measurement results from the pressure measuring unit 3. Figure 4 Gas supply processing or Figure 5 The gas exhaust process involves repeatedly adjusting the supply and exhaust of inactive gas, which causes pressure fluctuations (up and down) within the internal space 101 of chamber 1.

[0097] In step S64, the control unit 2 determines whether the initial start-up period has ended based on the elapsed time (e.g., 15 minutes elapsed since the start of the circulating purification unit 6) from the start of operation (the start of the supply of inactive gas). If the control unit 2 determines that the initial start-up period has not ended (S64 - No), the process returns to step S63 and the same process is performed. On the other hand, if the control unit 2 determines that the initial start-up period has ended in step S64 (S64 - Yes), the process proceeds to step S65.

[0098] Furthermore, the determination of the end of the initial startup period is not limited to the elapsed time from the start of startup (the start of the supply of inactive gas), but can also be based on the rate of change of internal pressure in the internal space 101 of chamber 1. For example, the control unit 2 can also obtain the rate of change of internal pressure based on the measurement results of the pressure measuring unit 3. If the rate of change of internal pressure is less than a predetermined threshold, the internal pressure state is stable, and the initial startup period is determined to be over (S64 - Yes).

[0099] In process S65, the control unit 2 changes the pressure range setting by subtracting the adjustment pressure Δ from the upper limit target value (upper limit pressure) of the pressure range set as an initial value. Through this process, the pressure range set as an initial value is gradually narrowed, thereby suppressing the pressure fluctuation amplitude of pressure fluctuations.

[0100] In process S66, the control unit 2 suppresses the adjustment range of the opening adjustment throttle valve. For example, in the gas supply process, the control unit 2 can adjust the opening of the opening adjustment throttle valve 9 based on the difference (absolute value of the difference) between the target pressure (lower limit target value) and the measurement result (current pressure of the internal space 101), and the gas supply unit 89 adjusts the supply amount of inactive gas based on the adjusted opening of the opening adjustment throttle valve 9. For example, the control unit 2 can also adjust the opening of the opening adjustment throttle valve 9 at its maximum opening area S2. MAX The opening adjustment parameter β of formula (1) is set in a way that limits the adjustment range of the opening, and the supply of inactive gas by the gas supply unit 89 is controlled.

[0101] The control unit 2 can also set the opening adjustment parameter β based on the number of processing repetitions to limit the adjustment range. For example, the opening adjustment parameter β can be set as follows: for repetitions of 1 to 10 cycles, it should be within 25% of the maximum open area; for repetitions of 11 to 20 cycles, it should be within 20% of the maximum open area; and for subsequent repetitions, it should be within 17% of the maximum open area.

[0102] Furthermore, in the gas exhaust process, the control unit 2 can adjust the opening of the opening adjustment throttle valve 10 based on the difference (absolute value) between the target pressure (upper limit target value) and the measured result (current pressure of the internal space 101), and the gas exhaust unit 111 adjusts the exhaust volume of the inactive gas based on the adjusted opening of the opening adjustment throttle valve 10. For example, the control unit 2 can also adjust the exhaust volume of the inactive gas at the maximum opening area S1 of the opening adjustment throttle valve 10. MAX The opening adjustment parameter γ of formula (2) is set in a way that limits the adjustment range of the opening, and the exhaust volume of the inactive gas is controlled by the gas exhaust volume adjustment mechanism.

[0103] The control unit 2 can also set the opening adjustment parameter γ of equation (2) in a way that limits the adjustment range based on the number of processing repetitions. For example, the opening adjustment parameter γ can be set as follows: for the number of repetitions of 1 to 10 cycles, it is within 25% of the maximum open area; for the number of repetitions of 11 to 20 cycles, it is within 20% of the maximum open area; and for subsequent repetitions, it is within 17% of the maximum open area.

[0104] In adjusting the opening of the throttle valve 10, such as Figure 5 As explained in the process description of step S54, formula (2) can be used, while in step S65, the setting of the upper limit target value is changed. In this case, in the calculation using formula (2), it is sufficient to use the pressure obtained by subtracting the adjustment pressure Δ from the upper limit target value set as the initial value (upper limit target value - adjustment pressure Δ).

[0105] Furthermore, in this embodiment, the configuration that brings the upper target value close to the lower target value is illustrated by way of example, but the disclosed technology is not limited to this example, and the configuration that brings the lower target value close to the upper target value may also be used. In this case, in the processing of step S65, the pressure range setting can be changed simply by adding the adjustment pressure Δ to the lower target value (lower pressure) of the pressure range set as the initial value. In this case, in the calculation using equation (1), the pressure (lower target value + adjustment pressure Δ) obtained by adding the adjustment pressure Δ to the lower target value set as the initial value is simply used.

[0106] Alternatively, the disclosed technology can also change the pressure range setting in a way that brings both the upper and lower target values ​​closer together. That is, it can also bring the target value of at least one of the upper and lower target values ​​closer to the target value of the other. By controlling the pressure by adjusting the adjustment range of the throttle valves 9 and 10 within a restricted range, the slope (rate of change) of the pressure relative to time can be suppressed.

[0107] In process S67, the gas supply process or the gas exhaust process is repeated. The pressure inside the chamber 101 is measured by the pressure measuring unit 3, and the gas supply process or the gas exhaust process is repeated based on the measurement results of the pressure measuring unit 3. The gas supply process or the gas exhaust process performed in this process is as follows: Figure 2 As shown in 2B and 2C, the amplitude and slope (rate of change) of pressure fluctuations in chamber 1 were suppressed.

[0108] In process S68, the control unit 2 performs a pressure control termination determination. For example, it determines whether the pressure range between the upper and lower target values ​​has been adjusted to a specified range (e.g., a pressure range below 100 Pa). If it is determined that the pressure range has not been adjusted to the specified pressure range (S68 - No), the process returns to process S65, and the same process is repeated. On the other hand, if the pressure range has been adjusted to the specified range in the determination of process S68 (S68 - Yes), the process ends.

[0109] In addition, the determination of the end of pressure control is not limited to the pressure range. It can also be carried out from the initial stage of start-up to the stable period, and repeated until a specified time has elapsed. The control ends after the specified time has elapsed and the control has transitioned to the stable period.

[0110] The control unit 2 controls the supply (supply amount) of gas from the gas supply unit 89 or the exhaust (exhaust amount) of gas from the gas exhaust unit 111 to adjust the pressure inside the chamber 1 to a pressure state 10 Pa to 300 Pa higher than the pressure outside the chamber 1. Through this pressure control, the pressure inside the chamber 101 can be adjusted to a slightly positive pressure state 10 Pa to 300 Pa higher than the pressure of the surrounding environment (atmospheric pressure) outside the chamber 1. Furthermore, over time, the pressure range set as an initial value is gradually narrowed, thereby suppressing pressure fluctuations to, for example, a pressure range below 100 Pa. Therefore, after the liquid organic EL material is coated onto the substrate, pressure changes within the chamber can be suppressed, thereby preventing differences in film thickness between each dried substrate.

[0111] Furthermore, conventionally, in order to implement stable micro-positive pressure control, chambers need to be made of metal materials to reduce minute leaks from the gaps between chambers. Chambers made of resin materials tend to leak more than those made of metal materials. However, by controlling the pressure of the internal space of chamber 1 to a micro-positive pressure state according to the disclosed technology, chamber 1 can be constructed using resin materials. This reduces the manufacturing cost of the device. As the resin material constituting chamber 1, a material with low oxygen or moisture permeability is preferred; for example, polyvinyl chloride (PVC) can also be used. Additionally, if a dry, inactive gas is allowed to flow, it will generate an electric charge; therefore, to suppress the generation of an electric charge, a resin material with an anti-electricity coating agent applied to its surface can also be used.

[0112] The above describes the implementation of the disclosed technology, but the components constituting the system or device or the values ​​described as control parameters are only examples and do not limit the scope of the invention.

[0113] In the manufacturing apparatus for organic EL elements, a pressure control technique is employed to maintain a low oxygen and low dew point environment equivalent to atmospheric pressure while suppressing pressure fluctuations during chamber pressure control. This stabilizes the evaporation rate of the liquid organic EL material. Consequently, film thickness variations on each dried substrate can be suppressed, thereby improving the yield of organic EL displays affected by performance defects or deviations. This contributes to the widespread adoption of large-scale organic EL displays, which have historically suffered from low yield rates.

[0114] (Implementation method of article manufacturing method)

[0115] The method for manufacturing articles (electronic devices) described in this embodiment can be applied, for example, to the manufacture of articles such as organic EL (OLED) panels using inkjet printing apparatus or slot coaters. The article manufacturing method of this embodiment includes a process (coating process) of obtaining a coated substrate by depositing or coating a solution film on a substrate using a coating method such as inkjet printing apparatus or slot coater.

[0116] Furthermore, the article manufacturing method of this embodiment includes a step of drying a solution film on a coated substrate to obtain a dry substrate with a dried film formed thereon (drying step). Moreover, this manufacturing method includes other well-known steps (firing, cooling, dehumidification, drying and cleaning, electrode formation, sealing film formation, etc.). Compared with conventional methods, the article manufacturing method of this embodiment is advantageous in at least one aspect of article performance, quality, productivity, and production cost.

[0117] (Summary of implementation methods)

[0118] [Item 1] A substrate processing apparatus for processing organic EL substrates, characterized in that, The aforementioned substrate processing apparatus includes: The measuring unit measures the pressure inside the chamber where the organic EL substrate is processed. A supply unit that supplies gas for setting the interior of the aforementioned chamber into a specified environment; An exhaust section, which discharges the gas from the aforementioned chamber; and The control unit controls the supply unit or the exhaust unit based on the pressure measured by the measuring unit, so that the pressure inside the chamber is within a set pressure range. The aforementioned control unit changes the pressure range in a manner that narrows over time, and... Based on the modified pressure range, the adjustment range of the gas supply from the supply unit or the adjustment range of the gas exhaust from the exhaust unit is controlled in a manner that decreases over time.

[0119] [Item 2] The substrate processing apparatus as described in Item 1, characterized in that, The control unit changes the pressure range in a narrowing manner by bringing at least one of the upper and lower target values ​​of the aforementioned pressure range closer to the other target value.

[0120] [Item 3] The substrate processing apparatus as described in Item 2, characterized in that, The control unit controls the adjustment range of the gas exhaust volume based on the difference between the pressure and the upper limit target value.

[0121] [Item 4] The substrate processing apparatus as described in Item 2, characterized in that, The control unit controls the adjustment range of the gas supply based on the difference between the pressure and the lower limit target value.

[0122] [Item 5] The substrate processing apparatus as described in Item 1, characterized in that, The control unit changes the pressure range in such a way that, as time passes, the upper target value of the upper and lower target values ​​within the set pressure range approaches the lower target value. The adjustment range of the gas exhaust volume is controlled based on the difference between the upper limit target value and the pressure within the modified pressure range.

[0123] [Item 6] The substrate processing apparatus as described in Item 1, characterized in that, The control unit changes the pressure range in such a way that, as time passes, the upper target value of the upper and lower target values ​​within the set pressure range approaches the lower target value. The adjustment range of the gas supply is controlled based on the difference between the lower limit target value and the pressure within the modified pressure range.

[0124] [Item 7] The substrate processing apparatus as described in any one of Items 1 to 6, characterized in that, After a predetermined time has elapsed since the start of the gas supply, the aforementioned control unit... The pressure range is changed in a manner that narrows over time, and... Based on the modified pressure range, the adjustment range of the gas supply or the adjustment range of the gas exhaust is controlled in a manner that decreases over time.

[0125] [Item 8] The substrate processing apparatus as described in any one of Items 1 to 6, characterized in that, If the rate of change of the pressure obtained by the control unit based on the measurement results of the measuring unit is less than a specified threshold, The pressure range is changed in a manner that narrows over time, and... Based on the modified pressure range, the adjustment range of the gas supply or the adjustment range of the gas exhaust is controlled in a manner that decreases over time.

[0126] [Item 9] The substrate processing apparatus as described in Item 7, characterized in that, The aforementioned substrate processing apparatus also includes: A gas supply piping, which is provided with a flow regulating section, is used to supply the gas to the chamber. A gas exhaust piping for discharging the gas from the aforementioned chamber; and A bypass piping that connects the gas supply piping to the gas exhaust piping. The aforementioned control unit controls the supply of the aforementioned gas in the following manner: Before the aforementioned specified time has elapsed, the throttling opening of the aforementioned flow adjustment section is closed, increasing the flow rate of gas to the aforementioned bypass pipe and decreasing the flow rate to the aforementioned chamber. After the specified time has elapsed, the throttling opening of the flow adjustment section is opened to reduce the flow rate of gas to the bypass pipe and increase the flow rate to the chamber.

[0127] [Item 10] The substrate processing apparatus according to any one of Items 1 to 9, characterized in that, The control unit controls the supply of gas from the supply unit or the exhaust of gas from the exhaust unit by making the difference between the upper and lower target values ​​within the modified pressure range below 100 Pa.

[0128] [Item 11] The substrate processing apparatus as described in any one of Items 1 to 10, characterized in that, The control unit controls the supply of gas from the supply unit or the exhaust of gas from the exhaust unit by adjusting the pressure of the chamber to a pressure state that is 10 Pa to 300 Pa higher than the pressure outside the chamber.

[0129] [Item 12] The substrate processing apparatus as described in any one of Items 1 to 11, characterized in that, The control unit sets different setpoints for the pressure at which the gas supply begins and the pressure at which the gas supply stops, thereby controlling the amount of gas supplied by the supply unit.

[0130] [Item 13] The substrate processing apparatus as described in any one of Items 1 to 12, characterized in that, The control unit sets different setpoints for the pressure at which the gas exhaust begins and the pressure at which the gas exhaust stops, thereby controlling the amount of gas exhausted by the exhaust unit.

[0131] [Item 14] The substrate processing apparatus as described in any one of Items 1 to 13, characterized in that, The aforementioned chamber is made of resin material.

[0132] [Item 15] The substrate processing apparatus as described in any one of Items 1 to 14, characterized in that, The gas supplied by the aforementioned supply unit contains inactive gases.

[0133] [Project 16]

[0134] A substrate processing method, comprising a substrate processing apparatus for processing organic EL substrates, characterized in that, The above-mentioned substrate processing method includes: The process of measuring the pressure inside the chamber that processes the above-mentioned organic EL substrate by the measuring unit; The process of supplying the gas used to set the interior of the above-mentioned chamber into a specified environment by the supply department; The process of discharging the gas from the aforementioned chamber via the exhaust section; and The control unit controls the supply unit or the exhaust unit based on the pressure measured by the measuring unit, so that the pressure inside the chamber is within a set pressure range. In the above-mentioned control process, The pressure range is changed in a manner that narrows over time, and... Based on the modified pressure range, the adjustment range of the gas supply from the supply unit or the adjustment range of the gas exhaust from the exhaust unit is controlled in a manner that decreases over time.

[0135] [Item 17] A method for manufacturing an article, characterized in that, The above-described article manufacturing method includes a step of processing the above-described organic EL substrate using the substrate processing apparatus described in any one of items 1 to 15.

[0136] (Other implementation methods)

[0137] This invention can also be implemented by the following process: a program that implements one or more functions of the above embodiments is supplied to a system or device via a network or storage medium, and the program is read and executed by one or more processors in the computer of the system or device. Alternatively, it can be implemented by a circuit (e.g., an ASIC) that implements one or more functions.

[0138] The invention is not limited to the embodiments described above, and various changes and modifications can be made without departing from the concept and scope of the invention. Therefore, claims are appended to disclose the scope of the invention.

[0139] This application claims priority based on Japanese Patent Application No. 2024-049990, filed on March 26, 2024, the entire contents of which are incorporated herein by reference.

[0140] Explanation of reference numerals in the attached figures

[0141] 1: Chamber; 2: Control unit; 3: Pressure measuring unit; 4: Flow adjustment throttle valve. 5: Blower (gas circulation blower); 6: Recirculating purification device for inactive gases. 7: Refining section (refining tower); 8: Valves; 9: Adjusting throttle valve for gas supply pipeline opening. 10: Throttle valve for adjusting the opening of the exhaust gas pipeline; 11: Valve; 12: Bypass piping; 13: Valves for air replacement piping. 14: Throttle valve for adjusting the opening of the air replacement pipeline; 15: Valve; 16: Valve. 141: Gas supply piping; 142: Gas exhaust piping.

Claims

1. A substrate processing apparatus for processing organic EL substrates, characterized in that, The aforementioned substrate processing apparatus includes: The measuring unit measures the pressure inside the chamber where the organic EL substrate is processed. A supply unit that supplies gas for setting the interior of the aforementioned chamber into a specified environment; An exhaust section, which discharges the gas from the aforementioned chamber; and The control unit controls the supply unit or the exhaust unit based on the pressure measured by the measuring unit, so that the pressure inside the chamber is within a set pressure range. The aforementioned control unit changes the pressure range in a manner that narrows over time, and... Based on the modified pressure range, the adjustment range of the gas supply from the supply unit or the adjustment range of the gas exhaust from the exhaust unit is controlled in a manner that decreases over time.

2. The substrate processing apparatus as claimed in claim 1, characterized in that, The control unit changes the pressure range in a narrowing manner by bringing at least one of the upper and lower target values ​​of the pressure range closer to the other target value.

3. The substrate processing apparatus as claimed in claim 2, characterized in that, The control unit controls the adjustment range of the gas exhaust volume based on the difference between the pressure and the upper limit target value.

4. The substrate processing apparatus as claimed in claim 2, characterized in that, The control unit controls the adjustment range of the gas supply based on the difference between the pressure and the lower limit target value.

5. The substrate processing apparatus as claimed in claim 1, characterized in that, The control unit changes the pressure range in such a way that, as time passes, the upper target value of the upper and lower target values ​​within the set pressure range approaches the lower target value. The adjustment range of the gas exhaust volume is controlled based on the difference between the upper limit target value and the pressure within the modified pressure range.

6. The substrate processing apparatus as claimed in claim 1, characterized in that, The control unit changes the pressure range in such a way that, as time passes, the upper target value of the upper and lower target values ​​within the set pressure range approaches the lower target value. The adjustment range of the gas supply is controlled based on the difference between the lower limit target value and the pressure within the modified pressure range.

7. The substrate processing apparatus as claimed in claim 1, characterized in that, After a predetermined time has elapsed since the start of the gas supply, the aforementioned control unit... The pressure range is changed in a manner that narrows over time, and... Based on the modified pressure range, the adjustment range of the gas supply or the adjustment range of the gas exhaust is controlled in a manner that decreases over time.

8. The substrate processing apparatus as claimed in claim 1, characterized in that, If the rate of change of the pressure obtained by the control unit based on the measurement results of the measuring unit is less than a specified threshold, The pressure range is changed in a manner that narrows over time, and... Based on the modified pressure range, the adjustment range of the gas supply or the adjustment range of the gas exhaust is controlled in a manner that decreases over time.

9. The substrate processing apparatus as claimed in claim 7, characterized in that, The aforementioned substrate processing apparatus also includes: A gas supply piping, which is provided with a flow regulating section, is used to supply the gas to the chamber. A gas exhaust piping for discharging the gas from the aforementioned chamber; and A bypass piping that connects the gas supply piping to the gas exhaust piping. The aforementioned control unit controls the supply of the aforementioned gas in the following manner: Before the aforementioned specified time has elapsed, the throttling opening of the aforementioned flow adjustment section is closed, increasing the flow rate of gas to the aforementioned bypass pipe and decreasing the flow rate to the aforementioned chamber. After the specified time has elapsed, the throttling opening of the flow adjustment section is opened to reduce the flow rate of gas to the bypass pipe and increase the flow rate to the chamber.

10. The substrate processing apparatus as claimed in claim 1, characterized in that, The control unit controls the supply of gas from the supply unit or the exhaust of gas from the exhaust unit by making the difference between the upper and lower target values ​​within the modified pressure range below 100 Pa.

11. The substrate processing apparatus as claimed in claim 1, characterized in that, The control unit controls the supply of gas from the supply unit or the exhaust of gas from the exhaust unit by adjusting the pressure of the chamber to a pressure state that is 10 Pa to 300 Pa higher than the pressure outside the chamber.

12. The substrate processing apparatus as claimed in claim 1, characterized in that, The control unit sets different setpoints for the pressure at which the gas supply begins and the pressure at which the gas supply stops, thereby controlling the amount of gas supplied by the supply unit.

13. The substrate processing apparatus as claimed in claim 1, characterized in that, The control unit sets different setpoints for the pressure at which the gas exhaust begins and the pressure at which the gas exhaust stops, thereby controlling the amount of gas exhausted by the exhaust unit.

14. The substrate processing apparatus as claimed in claim 1, characterized in that, The aforementioned chamber is made of resin material.

15. The substrate processing apparatus as claimed in claim 1, characterized in that, The gas supplied by the aforementioned supply unit contains inactive gases.

16. A substrate processing method, wherein the substrate processing method is a substrate processing apparatus for processing organic EL substrates, characterized in that, The above-mentioned substrate processing method includes: The process of measuring the pressure inside the chamber that processes the above-mentioned organic EL substrate by the measuring unit; The process of supplying the gas used to set the interior of the above-mentioned chamber into a specified environment by the supply department; The process of discharging the gas from the aforementioned chamber via the exhaust section; and The control unit controls the supply unit or the exhaust unit based on the pressure measured by the measuring unit, so that the pressure inside the chamber is within a set pressure range. In the above-mentioned control process, The pressure range is changed in a manner that narrows over time, and... Based on the modified pressure range, the adjustment range of the gas supply from the supply unit or the adjustment range of the gas exhaust from the exhaust unit is controlled in a manner that decreases over time.

17. A method for manufacturing an article, characterized in that, The above-described article manufacturing method includes a step of processing the above-described organic EL substrate using the substrate processing apparatus according to any one of claims 1 to 15.

Images