Plasma processing apparatus and substrate support table

Abstract

The plasma processing apparatus of the present application includes a plasma processing chamber, a susceptor, a high frequency power source, an electrostatic chuck, a joint, and a conductive layer. The susceptor is disposed in the plasma processing chamber. The high frequency power source is electrically connected to the susceptor. The electrostatic chuck is disposed on an upper portion of the susceptor and includes an adsorption electrode. The joint joins the susceptor to the electrostatic chuck. The conductive layer is disposed between the susceptor and the adsorption electrode. On an upper surface of the susceptor, a heat transfer gas flow path is formed that is bounded by the susceptor and the joint. The conductive layer has a thickness that is greater than a skin depth of a frequency of high frequency electric power output by the high frequency power source.

Description

Technical Field

[0001] This invention relates to a plasma processing apparatus and a substrate support stage. Background Technology

[0002] Patent document 1 discloses "a wafer mounting stage, wherein a cooling plate with a refrigerant flow path is provided on the lower surface side of a ceramic plate, the ceramic plate has a wafer mounting surface on its upper surface and electrodes are built in therein, the wafer mounting stage includes a horizontal space, which is provided parallel to the wafer mounting surface at a position inside the wafer mounting stage that is closer to the wafer mounting surface than the refrigerant flow path, and has an overlap portion that overlaps with the refrigerant flow path when viewed from above."

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2023-149660 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] This invention provides a technique to suppress the influence of the shape of the mating surface of the substrate on the processing results of plasma treatment of the substrate.

[0008] Technical solutions for solving technical problems

[0009] A plasma processing apparatus according to one aspect of the present invention includes a plasma processing chamber, a base, a high-frequency power supply, an electrostatic chuck, a junction, and a conductive layer. The base is disposed within the plasma processing chamber. The high-frequency power supply is electrically connected to the base. The electrostatic chuck is disposed on the upper part of the base and includes an adsorption electrode. The junction joins the base and the electrostatic chuck. The conductive layer is disposed between the base and the adsorption electrode. A heat transfer gas flow path is formed on the upper surface of the base, defined by the base and the junction. The conductive layer has a thickness greater than the skin depth of the frequency of the high-frequency electrical power output by the high-frequency power supply.

[0010] Invention Effects

[0011] According to the present invention, the shape of the mating surface of the base can be suppressed from affecting the processing results of plasma treatment of the substrate. Attached Figure Description

[0012] Figure 1 This is a diagram illustrating a structural example of the capacitively coupled plasma processing apparatus according to the first embodiment.

[0013] Figure 2 This is a cross-sectional view showing an example of the outline structure of the main body according to the first embodiment.

[0014] Figure 3 This is a plan view showing an example of the outline structure of the base according to the first embodiment.

[0015] Figure 4 This is a diagram illustrating an example of the flow of high-frequency electrical power and the processing results of plasma treatment in the main body of the comparative example.

[0016] Figure 5 This is a diagram illustrating an example of the flow of high-frequency electrical power and the processing results of plasma treatment in the main body according to the first embodiment.

[0017] Figure 6 This is a plan view showing another example of the outline structure of the base involved in the first embodiment.

[0018] Figure 7 This is a plan view showing another example of the outline structure of the base involved in the first embodiment.

[0019] Figure 8 This is a cross-sectional view showing an example of the outline structure of the main body according to the second embodiment.

[0020] Figure 9 This is a plan view showing an example of the outline structure of the electrostatic chuck according to the second embodiment.

[0021] Figure 10 This is a diagram illustrating an example of the plasma treatment results of the main body involved in the comparative example.

[0022] Figure 11 This is a diagram illustrating an example of the plasma treatment result of the main body according to the second embodiment. Detailed Implementation

[0023] Hereinafter, embodiments of the plasma processing apparatus and substrate support stage will be described in detail based on the accompanying drawings. Furthermore, the disclosed plasma processing apparatus and substrate support stage are not limited to the following embodiments.

[0024] Plasma processing apparatuses have long been known for performing plasma etching and other plasma treatments on substrates such as semiconductor wafers (hereinafter also referred to as "wafers"). In these plasma processing apparatuses, a substrate support stage for holding the substrate is disposed inside a vacuum chamber. The substrate support stage is constructed by joining a conductive base with an electrostatic chuck capable of electrostatically adsorbing the substrate. High-frequency electrical power is supplied to the base during plasma processing.

[0025] However, in plasma processing apparatuses, there are instances where the shape of the mating surface between the substrate and the electrostatic chuck affects the plasma processing results of the substrate. For example, the substrate support stage is configured to supply heat transfer gas between itself and the substrate. For instance, the substrate may have a heat transfer gas flow path formed at its mating surface with the electrostatic chuck. Sometimes, due to this heat transfer gas flow path, a deviation in the electric field generated by high-frequency electrical power occurs, and the shape of the flow path is transferred onto the etching target film on the substrate. Therefore, techniques are desired to suppress the influence of the shape of the substrate's mating surface on the plasma processing results of the substrate.

[0026] (First Embodiment)

[0027] [Device Structure]

[0028] An example of the plasma processing apparatus of the present invention will be described. In the embodiments described below, the case in which the plasma processing apparatus of the present invention is configured as a plasma processing system will be used as an example.

[0029] The following describes a structural example of a plasma processing system. Figure 1 This is a diagram illustrating a structural example of the capacitively coupled plasma processing apparatus according to the first embodiment.

[0030] The plasma processing system includes a capacitively coupled plasma processing device 1 and a control unit 2. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Furthermore, the plasma processing device 1 includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a spray head 13. The substrate support 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas into the plasma processing space 10s and at least one gas outlet for discharging gas from the plasma processing space. The plasma processing chamber 10 is grounded. The spray head 13 and the substrate support 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0031] The substrate support stage 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. The wafer is an example of a substrate W. An etch target film, which is to be etched, is formed on the upper surface of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 when viewed from above. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 in such a way that it surrounds the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as an annular support surface for supporting the ring assembly 112.

[0032] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode (also called an adsorption electrode, chuck electrode, or clamp electrode) 1111b disposed within the ceramic component 1111a. The ceramic component 1111a has a central region 111a. In one embodiment, the ceramic component 1111a also has an annular region 111b. Furthermore, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component, may also have an annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. Furthermore, at least one RF / DC electrode coupled to the RF (Radio Frequency) power supply 31 and / or DC (Direct Current) power supply 32 described later may also be disposed within the ceramic component 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When the bias RF signal and / or DC signal described later are supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Furthermore, the conductive components of the base 1110 and the at least one RF / DC electrode may also function as multiple lower electrodes. Additionally, the electrostatic electrode 1111b may also function as a lower electrode. Therefore, the substrate support stage 11 includes at least one lower electrode. In this embodiment, the electrostatic electrode 1111b corresponds to the adsorption electrode of the present invention.

[0033] The ring assembly 112 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover ring is formed of an insulating material.

[0034] Furthermore, the substrate support 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas can flow through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are disposed within the ceramic component 1111a of the electrostatic chuck 1111. Furthermore, the substrate support 11 is configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a. In the substrate support 11, a flow path for the heat transfer gas is formed in the main body 111. The structure of the flow path formed in the main body 111 will be described later.

[0035] The spray head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The process gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the plurality of gas inlets 13c. Furthermore, the spray head 13 includes at least one upper electrode. In addition to the spray head 13, the gas inlet unit may also include one or more side gas injectors (SGIs) mounted on one or more openings formed in the sidewall 10a.

[0036] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one type of process gas from its respective gas source 21 to the spray head 13 via its respective flow controller 22. Each flow controller 22 may, for example, include a mass flow controller or a pressure-controlled flow controller. The gas supply unit 20 may also include one or more flow modulation devices for modulating or pulsedizing the flow rate of the at least one process gas.

[0037] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10. Therefore, the RF power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases within the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, attracting ionic components from the generated plasma to the substrate W.

[0038] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a generation source RF signal (generation source RF power) for plasma generation. In one embodiment, the generation source RF signal has a frequency in the range of 10MHz to 150MHz. In one embodiment, the first RF generation unit 31a may also be configured to generate multiple generation source RF signals with different frequencies. The generated one or more generation source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0039] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed. That is, one or both of the source RF signal and the bias RF signal may be a pulsed rectangular wave signal.

[0040] Furthermore, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to at least one lower electrode. Furthermore, the first DC generation unit 32a is connected to an electrostatic electrode 1111b, and when the substrate W is electrostatically attracted using DC power, a DC signal is applied to the electrostatic electrode 1111b. Furthermore, when the substrate W is electrostatically attracted using AC power, an AC (Alternating Current) signal is applied to the electrostatic electrode 1111b. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0041] In various embodiments, at least one of the first and second DC signals can be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can also have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from the DC signals is connected between the first DC generation unit 32a and at least one lower electrode. Therefore, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses can have positive or negative polarity. Furthermore, the sequence of voltage pulses can include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. In addition, the first and second DC generation units 32a and 32b can be provided in addition to the RF power supply 31, or the first DC generation unit 32a can be provided instead of the second RF generation unit 31b.

[0042] The exhaust system 40 may be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve can be used to regulate the pressure within the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0043] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control various parts of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and perform various control actions by executing the read program. The program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The retrieved program is stored in the storage unit 2a2 and can be read and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network). The plasma processing apparatus 1 performs plasma processing based on the control of the control unit 2. For example, the plasma processing apparatus 1 performs plasma etching on the etching target film formed on the substrate W based on the control of the control unit 2.

[0044] Next, the structure of the main body 111 according to the first embodiment will be described. Figure 2 This is a cross-sectional view showing an example of the general structure of the main body 111 according to the first embodiment. The main body 111 includes a base 1110 and an electrostatic chuck 1111.

[0045] In the electrostatic chuck 1111, an electrostatic electrode 1111b is disposed within the ceramic component 1111a. Furthermore, a first DC generation unit 32a is connected to the electrostatic electrode 1111b, and a DC signal is applied when electrostatically adsorbing the substrate W.

[0046] The base 1110 is formed of a conductive component. For example, the base 1110 is formed of aluminum or MMC (Metal Matrix Composites). MMC is a composite material that combines metals with ceramic-like reinforcing materials. The base 1110 is connected to an RF power supply 31, from which high-frequency electrical power such as the generator RF signal and the bias RF signal is supplied during plasma processing. The base 1110 functions as a lower electrode.

[0047] The electrostatic chuck 1111 is bonded to the base 1110 via an adhesive layer 1112. The electrostatic chuck 1111 is disposed on the upper surface 1110b of the base 1110 and is bonded to the base 1110 via the adhesive layer 1112.

[0048] In the main body 111, a substrate W is placed in the central region 111a. The main body 111 is configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a. A heat transfer gas flow path for the heat transfer gas is formed in the main body 111. For example, the base 1110 defines diffusion paths 11101a and 11101b as part of the heat transfer gas flow path on its upper surface 1110b, the mating surface where it engages with the electrostatic chuck 1111. In this embodiment, the diffusion paths 11101a and 11101b correspond to the heat transfer gas flow path of the present invention.

[0049] Figure 3 This is a plan view showing an example of the outline structure of the base 1110 according to the first embodiment. Figure 3 The upper surface 1110b of the base 1110 is shown. The base 1110 has two annular diffusion flow paths 11101a and 11101b formed in a concentric circle on its upper surface 1110b.

[0050] like Figure 2 As shown, diffusion flow paths 11101a and 11101b are formed by creating rectangular recesses on the upper surface 1110b of the base 1110, and covering the upper part of these recesses with an adhesive layer 1112, thereby creating the space for the flow paths. In this way, by forming recesses on the upper surface 1110b of the base 1110 and covering the upper part of these recesses with an adhesive layer 1112, diffusion flow paths 11101a and 11101b can be easily fabricated in the main body 111.

[0051] A through-hole (not shown) is formed in the base 1110, leading from the lower surface 1110c to the diffusion paths 11101a and 11101b, into which heat transfer gas is supplied. A thermally conductive gas, such as He gas, can be appropriately used as the heat transfer gas. The heat transfer gas supplied to the through-hole (not shown) flows into the diffusion paths 11101a and 11101b and diffuses within them.

[0052] In the electrostatic chuck 1111 and the adhesive layer 1112, a plurality of gas holes (not shown) are formed corresponding to the supply positions of the heat transfer gas in the central region 111a. The heat transfer gas in the diffusion paths 11101a and 11101b flows to each gas hole (not shown) and is supplied to the central region 111a.

[0053] However, in the plasma processing apparatus 1, there are cases where the shape of the upper surface 1110b of the base 1110, which is engaged with the electrostatic chuck 1111, affects the processing result of the plasma processing of the substrate W. For example, in the plasma processing apparatus 1, sometimes, due to the deviation of the electric field generated by the high-frequency electric power caused by the diffusion flow paths 11101a and 11101b formed on the upper surface 1110b of the base 1110, the shape of the diffusion flow paths 11101a and 11101b is transferred to the etching target film of the substrate W.

[0054] Therefore, in the plasma processing apparatus 1 according to the first embodiment, a conductive layer 1113 is disposed between the base 1110 of the main body 111 and the electrostatic electrode 1111b. The conductive layer 1113 is disposed on the upper surface of the adhesive layer 1112.

[0055] The conductive layer 1113 is formed of a conductive material. For example, the conductive layer 1113 is a non-magnetic body and has a volume resistivity of 1.0 × 10⁻⁶. -6 Ω·cm~1.0×10 -4 The conductive layer 1113 is preferably formed of a material with a coefficient of linear expansion similar to that of the base 1110. In this embodiment, the base 1110 is formed of MMC, and the conductive layer 1113 is formed of aluminum.

[0056] The conductive layer 1113 has a thickness above the skin depth of the frequency of the high-frequency electrical power supplied to the base 1110. The skin depth d can be calculated, for example, according to the following formula (1).

[0057] d = {2 / (σ×ω×μ)} 1 / 2 ...(1)

[0058] Here, σ is the conductivity of the conductive layer 1113.

[0059] ω is the angular frequency of the current and the angular velocity of the high-frequency electrical power supplied to the base 1110.

[0060] μ is the absolute permeability of the conductive layer 1113.

[0061] For example, in a non-magnetic body with a volume resistivity of 1.0 × 10⁻⁶... -6 Ω·cm~1.0×10 -4 When a conductive layer 1113 is formed from a material with a surface area of ​​Ω·cm, and the frequency of the high-frequency electrical power supplied to the substrate 1110 is 100kHz to 100MHz, the skin depth d is in the range of 5μm to 2mm. The conductive layer 1113 is formed to a thickness greater than or equal to the skin depth d. For example, the conductive layer 1113 is formed to a thickness of 5μm to 2mm.

[0062] Thus, the plasma processing apparatus 1 according to the first embodiment provides a conductive layer 1113 between the base 1110 of the main body 111 and the electrostatic electrode 1111b, allowing high-frequency electrical power to propagate uniformly to the substrate W in the in-plane direction via the conductive layer. This suppresses the influence of the shape of the upper surface 1110b of the base 1110 on the processing result of the plasma processing of the substrate W. For example, it prevents the shape of the upper surface 1110b of the base 1110 from being transferred to the etching target film of the substrate W.

[0063] Here, as a comparative example, an example of the flow of high-frequency electrical power and the processing result of plasma treatment in the main body 111 without the conductive layer 1113 will be described. Figure 4 This is a diagram illustrating an example of the flow of high-frequency electrical power and the processing results of plasma treatment in the main body 111 involved in the comparative example. The main body 111 involved in the comparative example does not have a conductive layer 1113. In this case, in the main body 111 involved in the comparative example, the high-frequency electrical power passes through the shape of the upper surface 1110b of the base 1110 relative to the substrate W side. Figure 4 The image shows an enlarged view of the vicinity of the diffusion flow path 11101b of the main body 111. In the enlarged view, the flow of high-frequency electrical power is indicated by arrows. Furthermore, the enlarged view shows the passage surface L1 through which the high-frequency electrical power passes. For example, in the diffusion flow path 11101b, the high-frequency electrical power passes from the bottom surface of the diffusion flow path 11101b, and the high-frequency electrical power does not propagate uniformly to the substrate W in the in-plane direction. Therefore, there is a possibility that the shape of the upper surface 1110b of the substrate 1110 can affect the processing results of the plasma treatment of the substrate W. For example, sometimes, due to deviations in the electric field generated by the high-frequency electrical power caused by the diffusion flow paths 11101a and 11101b, the shape of the diffusion flow paths 11101a and 11101b can be transferred to the etching target film of the substrate W. Figure 4An example of the plasma treatment result for the etching target film 120 of substrate W is shown. On the etching target film 120 of substrate W, annular patterns 121a and 121b are formed corresponding to the shapes of diffusion flow paths 11101a and 11101b.

[0064] Figure 5 This diagram illustrates an example of the flow of high-frequency electrical power and the processing results of plasma treatment in the main body 111 according to the first embodiment. The main body 111 according to the first embodiment has a conductive layer 1113 provided between the base 1110 and the electrostatic electrode 1111b. In the main body 111 according to the first embodiment, when high-frequency electrical power passes through the conductive layer 1113, the high-frequency electrical power propagates within the conductive layer 1113 and passes through the substrate W side according to the shape of the conductive layer 1113. That is, the high-frequency electrical power propagates uniformly to the substrate W in the in-plane direction via the conductive layer. Figure 5 The image shows an enlarged view of the vicinity of the diffusion flow path 11101b of the main body 111. Arrows indicate the flow of high-frequency electrical power in the enlarged view. Furthermore, the passage surface L2 through which the high-frequency electrical power passes is also shown in the enlarged view. In the main body 111 according to the first embodiment, for example, at a portion of the diffusion flow path 11101b, high-frequency electrical power also passes through the upper surface of the conductive layer 1113. Therefore, the plasma processing apparatus 1 according to the first embodiment can suppress the influence of the shape of the upper surface 1110b of the base 1110 on the processing result of the plasma processing of the substrate W. Figure 5 An example of the processing result of plasma treatment of the etching target film 120 on the substrate W is shown. In the main body 111 according to the first embodiment, the shapes of the diffusion flow paths 11101a and 11101b are not transferred to the etching target film 120 on the substrate W. As a result, the plasma processing apparatus 1 according to the first embodiment can suppress the decrease in yield of semiconductor devices manufactured on the substrate W.

[0065] Furthermore, in the first embodiment described above, an example was given where a conductive layer 1113 is provided in addition to the adhesive layer 1112, but this is not a limitation. The adhesive layer 1112 may also contain a conductive material and function as the conductive layer 1113. That is, the adhesive layer 1112 may also be a conductive adhesive layer 1112. When the adhesive layer 1112 is configured as described in the first embodiment, the plasma processing apparatus 1 can also suppress the influence of the shape of the upper surface 1110b of the substrate 1110 on the processing result of the plasma processing of the substrate W. For example, it can prevent the shape of the upper surface 1110b of the substrate 1110 from being transferred to the etching target film 120 of the substrate W.

[0066] Furthermore, in the first embodiment described above, the case in which a conductive layer 1113 is provided on the upper surface of the adhesive layer 1112 was used as an example, but it is not limited to this. The conductive layer 1113 can be provided at any position as long as it is between the base 1110 and the electrostatic electrode 1111b. Figure 6 This is a plan view showing another example of the outline structure of the base 1110 according to the first embodiment. Figure 6 In the middle, as the adhesive layer 1112 that joins the base 1110 and the electrostatic chuck 1111, two adhesive layers 1112a and 1112b are provided, and a conductive layer 1113 is provided between the adhesive layers 1112a and 1112b. Figure 7 This is a plan view showing another example of the outline structure of the base 1110 according to the first embodiment. Figure 7 In the electrostatic chuck 1111, the conductive layer 1113 is disposed within the ceramic component 1111a at a position closer to the base 1110 than the electrostatic electrode 1111b. The plasma processing apparatus 1 according to the first embodiment, when the main body 111 is subjected to such a... Figure 6 or Figure 7 In the configuration shown, it is also possible to suppress the influence of the shape of the upper surface 1110b of the substrate 1110 on the processing results of the plasma treatment of the substrate W. For example, it is possible to prevent the shape of the upper surface 1110b of the substrate 1110 from being transferred to the etching target film 120 of the substrate W.

[0067] Furthermore, in the first embodiment described above, the case in which two diffusion paths 11101a and 11101b are formed on the upper surface 1110b of the base 1110 was described as an example, but it is not limited to this. Only one diffusion path may be formed, or more than three may be formed. Moreover, the first embodiment described above can be applied not only to the central region 111a for supporting the substrate W, but also to the annular region 111b for supporting the ring assembly 112.

[0068] Furthermore, in the first embodiment described above, an example was given where two annular diffusion paths 11101a and 11101b are formed concentrically on the upper surface 1110b of the base 1110, but the embodiment is not limited to this. The path shape of the diffusion paths can be formed in any shape.

[0069] The first embodiment has been described above. As described above, the plasma processing apparatus 1 according to the first embodiment includes a plasma processing chamber 10, a base 1110, an RF power supply 31 (high-frequency power supply), an electrostatic chuck 1111, an adhesive layer 1112 (joint portion), and a conductive layer 1113. The base 1110 is disposed within the plasma processing chamber 10. The RF power supply 31 is electrically connected to the base 1110. The electrostatic chuck 1111 is disposed on the upper part of the base 1110 and includes an electrostatic electrode 1111b (adsorption electrode). The adhesive layer 1112 joins the base 1110 and the electrostatic chuck 1111. The conductive layer 1113 is disposed between the base 1110 and the electrostatic electrode 1111b. Diffusion flow paths 11101a and 11101b (heat transfer gas flow paths) defined by the base 1110 and the adhesive layer 1112 are formed on the upper surface 1110b of the base 1110. The conductive layer 1113 has a thickness greater than or equal to the skin depth of the high-frequency electrical power output by the RF power supply 31. As a result, the plasma processing apparatus 1 can suppress the influence of the shape of the bonding surface of the bonding electrostatic chuck 1111 (i.e., the upper surface 1110b of the base 1110) on the processing result of the plasma processing of the substrate W.

[0070] Furthermore, the adhesive layer 1112 may contain a conductive material, functioning as a conductive layer 1113. Thus, the plasma processing apparatus 1 can suppress any impact on the plasma processing results of the substrate W while simultaneously bonding the base 1110 and the electrostatic chuck 1111 using the adhesive layer 1112.

[0071] Furthermore, the conductive layer 1113 can be disposed within the electrostatic chuck 1111. Thus, the plasma processing apparatus 1 can suppress any impact on the plasma processing results of the substrate W.

[0072] Furthermore, the adhesive layer 1112 may include an adhesive layer 1112b (first bonding layer) and an adhesive layer 1112a (second bonding layer) disposed below the first bonding layer. A conductive layer 1113 is disposed between the adhesive layer 1112b and the adhesive layer 1112a. Thus, the plasma processing apparatus 1 is able to suppress any impact on the processing results of the plasma processing of the substrate W.

[0073] Furthermore, the conductive layer 1113 is a non-magnetic material, and its volume resistivity is 1.0 × 10⁻⁶. -6 Ω·cm~1.0×10 -4 The material is formed at Ω·cm. The thickness of the conductive layer 1113 is 5μm to 2mm. The frequency of the high-frequency electric power is in the range of 100kHz to 100MHz. Therefore, the plasma processing apparatus 1 can suppress the influence of plasma processing on the substrate W.

[0074] Furthermore, the diffusion flow paths 11101a and 11101b are defined by a recess formed on the upper surface 1110b of the base 1110 and an adhesive layer 1112 covering the recess. Thus, the plasma processing apparatus 1 can easily form the diffusion flow paths 11101a and 11101b on the upper surface 1110b of the base 1110.

[0075] Furthermore, the base 1110 can be formed of MMC. The conductive layer 1113 can be formed of aluminum. In this case, since the coefficient of linear expansion of MMC is similar to that of the electrostatic chuck 1111, the plasma processing apparatus 1 can suppress misalignment and cracking between the base 1110 and the conductive layer 1113 caused by temperature changes.

[0076] (Second Implementation)

[0077] Next, the second embodiment will be described. The structure of the plasma processing system according to the second embodiment is similar to... Figure 1 The plasma processing system shown in the first embodiment has the same structure, so the description is omitted.

[0078] The structure of the main body 111 according to the second embodiment will be described. Figure 8 This is a cross-sectional view showing an example of the outline structure of the main body 111 according to the second embodiment. The main body 111 according to the second embodiment and... Figure 8 The main body 111 involved in the first embodiment shown has the same partial structure, so the same reference numerals are used to mark the same parts and the description is omitted. The main focus is on the different parts.

[0079] The main body 111 according to the second embodiment is configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a. A flow path for the heat transfer gas is formed in the main body 111. For example, the base 1110 has diffusion flow paths 11101a and 11101b formed on its upper surface 1110b, the mating surface where it engages with the electrostatic chuck 1111, as part of the heat transfer gas flow path.

[0080] In the main body 111 according to the second embodiment, a plurality of dot-shaped protrusions (not shown) for supporting the substrate W are formed in the central region 111a. Furthermore, in the main body 111 according to the second embodiment, an annular intermediate sealing strips 130a and 130b are provided in the central region 111a. Additionally, in the main body 111 according to the second embodiment, an annular outer peripheral sealing strip 131 is provided along the outer periphery of the substrate W in the central region 111a. The intermediate sealing strips 130a and 130b, the outer peripheral sealing strip 131, and the plurality of dot-shaped protrusions (not shown) are formed to the same height. Furthermore, the intermediate sealing strip is a sealing strip disposed other than the outer peripheral sealing strip 131 in the central region 111a.

[0081] Figure 9 This is a plan view showing an example of the outline structure of the electrostatic chuck 1111 according to the second embodiment. Figure 9 The central region 111a of the electrostatic chuck 1111 is shown. In the central region 111a of the electrostatic chuck 1111, two intermediate sealing bands 130a and 130b and an outer peripheral sealing band 131 are formed in concentric circles.

[0082] like Figure 8 As shown, in the second embodiment, the main body 111 supports the substrate W using intermediate sealing strips 130a and 130b, an outer peripheral sealing strip 131, and a plurality of dot-shaped protrusions (not shown) provided in the central region 111a. Spaces 132a to 132c are formed between the substrate W and the central region 111a. Heat transfer gas supplied to the central region 111a remains in spaces 132a to 132c. The intermediate sealing strip 130a separates spaces 132a and 132b, preventing heat transfer gas from flowing from space 132a to space 132b. The intermediate sealing strip 130b separates spaces 132b and 132c, preventing heat transfer gas from flowing from space 132b to space 132c. The outer peripheral sealing strip 131 separates space 132c from the space on the outer periphery of the substrate W, preventing heat transfer gas from flowing from space 132c to the outer periphery of the substrate W.

[0083] However, in the plasma processing apparatus 1, the contact portions, such as the intermediate sealing strips 130a and 130b, the outer peripheral sealing strip 131, and the multiple dot-shaped protrusions (not shown), have different thermal resistance to the substrate W compared to the spaces 132a to 132c where the heat transfer gas is supplied. For example, the contact portions have lower thermal resistance compared to the spaces 132a to 132c. Therefore, temperature differences sometimes occur within the surface of the substrate W, affecting the processing results of the plasma treatment of the substrate W. In particular, the intermediate sealing strips 130a and 130b contact the substrate W in the central portion, and the contact area is also relatively large. Therefore, in the plasma processing apparatus 1, the temperature of the contact portions within the surface of the substrate W that contact the intermediate sealing strips 130a and 130b decreases, and the shape of the intermediate sealing strips 130a and 130b sometimes transfers to the etching target film of the substrate W.

[0084] Therefore, in the plasma processing apparatus 1 according to the second embodiment, diffusion paths 11101a and 11101b need to be configured in conjunction with the intermediate sealing strips 130a and 130b. For example, in the main body 111 according to the second embodiment, diffusion paths 11101a and 11101b are formed on the upper surface 1110b of the base 1110 at a position below the intermediate sealing strips 130a and 130b. For example, in the main body 111, diffusion path 11101a is formed on the upper surface 1110b of the base 1110 at a position directly below the intermediate sealing strip 130a, and diffusion path 11101b is formed on the upper surface 1110b of the base 1110 at a position directly below the intermediate sealing strip 130b. The thermal resistance of the intermediate sealing strips 130a and 130b in the central region 111a of the main body 111 varies with the width and depth of the diffusion paths 11101a and 11101b. The width and depth of the diffusion path 11101a are configured such that the thermal resistance of the intermediate sealing strip 130a in the central region 111a is equal to the thermal resistance of the spaces 132a to 132c in the central region 111a. The width and depth of the diffusion path 11101b are configured such that the thermal resistance of the intermediate sealing strip 130b in the central region 111a is equal to the thermal resistance of the spaces 132a to 132c in the central region 111a.

[0085] Therefore, in the plasma processing apparatus 1 according to the second embodiment, it is possible to suppress the generation of temperature differences in the plane of the substrate W, and thus it is possible to suppress the impact on the processing results of plasma processing of the substrate W.

[0086] Here, a comparative example will be explained. Figure 10 This diagram illustrates an example of the plasma processing results of the main body 111 involved in the comparative example. In the main body 111 involved in the comparative example, diffusion paths 11101a and 11101b are formed within the base 1110, below the flow path 1110a for the supply of heat transfer fluid. In this case, in the plasma processing apparatus 1, the contact portions such as the intermediate sealing strips 130a and 130b have different thermal resistance to the substrate W compared to the spaces 132a to 132c where the heat transfer gas is supplied. In the main body 111 involved in the comparative example, the thermal resistance of the intermediate sealing strips 130a and 130b in the central region 111a is lower than the thermal resistance of the spaces 132a to 132c. Figure 10 The image shows an enlarged view of the area near the intermediate sealing strip 130b of the main body 111. In the enlarged view, the thermal resistance of the intermediate sealing strip 130b portion in the central region 111a of the main body 111 is represented as thermal resistance R. SB The thermal resistance of the spaces 132b and 132c in the central region 111a of the main body 111 is expressed as thermal resistance R. HeIn the main body 111 of the comparative example, since the intermediate sealing strip 130b is in contact with the substrate W, the thermal resistance R is... SB < Thermal resistance R He Therefore, temperature differences may sometimes occur within the surface of the substrate W, affecting the plasma processing results of the substrate W. For example, in the plasma processing apparatus 1 of the comparative example, the temperature of the contact portion within the surface of the substrate W that contacts the intermediate sealing strips 130a and 130b decreases, and the shape of the intermediate sealing strips 130a and 130b may sometimes be transferred to the etching target film 120 of the substrate W. Figure 10 An example of the plasma treatment result of etching target film 120 on substrate W is shown. In the etching target film 120 of substrate W, rings 122a and 122b are formed corresponding to the shapes of intermediate sealing bands 130a and 130b.

[0087] Figure 11 This diagram illustrates an example of the plasma treatment result of the main body 111 according to the second embodiment. In the main body 111 according to the first embodiment, diffusion paths 11101a and 11101b are formed on the upper surface 1110b of the base 1110, below the intermediate sealing strips 130a and 130b. The width and depth of the diffusion path 11101a are configured such that the thermal resistance of the intermediate sealing strip 130a portion is equal to the thermal resistance of the spaces 132a to 132c. The width and depth of the diffusion path 11101b are configured such that the thermal resistance of the intermediate sealing strip 130b portion is equal to the thermal resistance of the spaces 132a to 132c. Figure 11 The image shows an enlarged view of the area near the intermediate sealing strip 130b of the main body 111. The enlarged view shows the thermal resistance R of the intermediate sealing strip 130b portion in the central region 111a of the main body 111. SB The thermal resistance R of the spaces 132b and 132c in the central region 111a of the main body 111. He In the main body 111 according to the second embodiment, the thermal resistance R SB ≒ Thermal resistance R He Therefore, the main body 111 according to the second embodiment can suppress temperature differences within the surface of the substrate W, thereby suppressing any impact on the plasma processing results of the substrate W. Consequently, the plasma processing apparatus 1 according to the second embodiment can suppress any decrease in the yield of semiconductor devices manufactured on the substrate W.

[0088] Furthermore, in the second embodiment described above, the case in which diffusion flow paths 11101a and 11101b are formed on the upper surface 1110b of the base 1110 was used as an example, but it is not limited to this. The diffusion flow paths 11101a and 11101b may also be formed in the base 1110, above the flow path 1110a for the flow of heat transfer fluid. In addition, the second embodiment described above can be applied not only to the central region 111a for supporting the substrate W, but also to the annular region 111b for supporting the ring assembly 112.

[0089] Furthermore, in the second embodiment, the main body 111 is similar to that in the first embodiment, and a conductive layer 1113 can be disposed between the base 1110 of the main body 111 and the electrostatic electrode 1111b. Additionally, the adhesive layer 1112 may contain a conductive material and function as the conductive layer 1113.

[0090] The second embodiment has been described above. As described above, the plasma processing apparatus 1 according to the second embodiment includes a plasma processing chamber 10, a base 1110, an RF power supply 31 (high-frequency power supply), an electrostatic chuck 1111, and an adhesive layer 1112 (joint portion). The base 1110 is disposed within the plasma processing chamber 10. The RF power supply 31 is electrically connected to the base 1110. The electrostatic chuck 1111 is disposed on the upper part of the base 1110 and includes an electrostatic electrode 1111b (adsorption electrode). The adhesive layer 1112 (joint portion) joins the base 1110 and the electrostatic chuck 1111. An annular intermediate sealing strip 130a, 130b is formed in the central region 111a (upper surface) of the electrostatic chuck 1111. In the central region 111a of the base 1110, below the intermediate sealing strips 130a and 130b, diffusion flow paths 11101a and 11101b (heat transfer gas flow paths) defined by the base 1110 and the adhesive layer 1112 are formed. Therefore, in the plasma processing apparatus 1, temperature differences within the surface of the substrate W can be suppressed, thereby preventing any impact on the plasma processing results of the substrate W.

[0091] Furthermore, in the base 1110, diffusion paths 11101a and 11101b are formed directly below the intermediate sealing strips 130a and 130b. The electrostatic chuck 1111 supports the substrate using the intermediate sealing strips 130a and 130b, and heat transfer gas is supplied to the spaces 132a to 132c formed on the upper surface by the intermediate sealing strips 130a and 130b and the substrate W. The width and depth of the diffusion paths 11101a and 11101b are configured such that the thermal resistance of the intermediate sealing strips 130a and 130b is equal to the thermal resistance of the spaces 132a to 132c. Therefore, in the plasma processing apparatus 1, temperature differences within the surface of the substrate W can be suppressed, thereby preventing any impact on the plasma processing results of the substrate W.

[0092] Furthermore, the embodiments disclosed herein should be considered as examples only in all respects, and not as limiting descriptions. In fact, the above embodiments can be implemented in many forms. Moreover, the above embodiments can be omitted, substituted, or modified in various ways without departing from the scope and spirit of the claims.

[0093] Furthermore, in the above embodiments, the use of capacitively coupled plasma (CCP) as a plasma source was described as an example, but the disclosed technology is not limited to this. For example, inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), or helical wave-excited plasma (HWP) can also be used as plasma sources.

[0094] Furthermore, in the above embodiments, the case of performing plasma treatment such as plasma etching on the substrate W as plasma treatment has been described as an example, but it is not limited to this. As plasma treatment, any treatment that uses plasma can be used. For example, plasma treatment can also be a film formation treatment, a modification treatment, ashing, or other heat treatment.

[0095] In addition, the following notes are further disclosed regarding the above-described embodiments.

[0096] (Note 1)

[0097] A plasma processing apparatus comprising:

[0098] Plasma processing chamber;

[0099] A base disposed within the aforementioned plasma processing chamber;

[0100] A high-frequency power supply electrically connected to the aforementioned base;

[0101] An electrostatic chuck is disposed on the upper part of the aforementioned base and includes an adsorption electrode;

[0102] The joint where the base and the electrostatic chuck are joined; and

[0103] A conductive layer disposed between the aforementioned base and the aforementioned adsorption electrode;

[0104] A heat transfer gas flow path, defined by the base and the joint, is formed on the upper surface of the base.

[0105] The conductive layer described above has a thickness greater than or equal to the skin depth of the frequency of the high-frequency electrical power output from the high-frequency power source.

[0106] (Note 2)

[0107] As described in Appendix 1, the plasma processing apparatus, wherein,

[0108] The aforementioned joint contains a conductive material, which functions as the aforementioned conductive layer.

[0109] (Note 3)

[0110] As described in Appendix 1, the plasma processing apparatus, wherein,

[0111] The conductive layer is disposed within the electrostatic chuck.

[0112] (Note 4)

[0113] As described in Appendix 1, the plasma processing apparatus, wherein,

[0114] The aforementioned joint includes a first bonding layer and a second bonding layer disposed below the first bonding layer.

[0115] The conductive layer is disposed between the first bonding layer and the second bonding layer.

[0116] (Note 5)

[0117] As described in any of Appendix 1 to 4, the plasma processing apparatus, wherein,

[0118] The aforementioned conductive layer is a non-magnetic material, and its volume resistivity is 1.0 × 10⁻⁶. -6 Ω·cm~1.0×10 -4 Material formation at Ω·cm.

[0119] (Note 6)

[0120] As described in Appendix 5, the plasma processing apparatus, in which,

[0121] The thickness of the aforementioned conductive layer is in the range of 5μm to 2mm.

[0122] (Note 7)

[0123] As described in any of Appendix 1 to 6, the plasma processing apparatus, wherein,

[0124] The aforementioned high frequencies are in the range of 100kHz to 100MHz.

[0125] (Note 8)

[0126] As described in any of the appendices 1 to 7, the plasma processing apparatus, wherein,

[0127] The aforementioned heat transfer gas flow path is defined by the recess formed on the upper surface of the base and the aforementioned joint covering the recess.

[0128] (Note 9)

[0129] As described in any of the appendices 1 to 8, the plasma processing apparatus, wherein,

[0130] The base is formed of MMC (Metal Matrix Composites).

[0131] The conductive layer is formed of aluminum.

[0132] (Postscript 10)

[0133] A substrate support stage, comprising:

[0134] A base configured within the plasma processing chamber;

[0135] An electrostatic chuck is disposed on the upper part of the aforementioned base and includes an adsorption electrode;

[0136] The joint where the base and the electrostatic chuck are joined; and

[0137] A conductive layer disposed between the aforementioned base and the aforementioned adsorption electrode;

[0138] A heat transfer gas flow path, defined by the base and the joint, is formed on the upper surface of the base.

[0139] The conductive layer has a thickness exceeding the skin depth at a high frequency supplied to the substrate during plasma processing.

[0140] (Postscript 11)

[0141] As described in Appendix 10, the substrate support platform, in which...

[0142] The aforementioned joint contains a conductive material, which functions as the aforementioned conductive layer.

[0143] (Postscript 12)

[0144] As described in Appendix 10, the substrate support platform, in which...

[0145] The conductive layer is disposed within the electrostatic chuck.

[0146] (Postscript 13)

[0147] As described in Appendix 10, the substrate support platform, in which...

[0148] The aforementioned joint includes a first bonding layer and a second bonding layer disposed below the first bonding layer.

[0149] The conductive layer is disposed between the first bonding layer and the second bonding layer.

[0150] (Postscript 14)

[0151] As described in any of the appendices 10 to 13, the substrate support platform, wherein...

[0152] The aforementioned conductive layer is a non-magnetic material, and its volume resistivity is 1.0 × 10⁻⁶. -6 Ω·cm~1.0×10 -4 Material formation at Ω·cm.

[0153] (Postscript 15)

[0154] As described in Appendix 14, the substrate support platform, in which...

[0155] The thickness of the aforementioned conductive layer is in the range of 5μm to 2mm.

[0156] (Postscript 16)

[0157] As described in any of the appendices 10 to 15, the substrate support platform, in which...

[0158] The aforementioned high frequencies are in the range of 100kHz to 100MHz.

[0159] (Postscript 17)

[0160] As described in any of the appendices 10 to 16, the substrate support platform, in which...

[0161] The aforementioned heat transfer gas flow path is defined by the recess formed on the upper surface of the aforementioned base and the aforementioned joint covering the recess.

[0162] (Postscript 18)

[0163] As described in any of the appendices 10 to 17, the substrate support platform, in which...

[0164] The base is formed of MMC (Metal Matrix Composites).

[0165] The conductive layer is formed of aluminum.

[0166] (Postscript 19)

[0167] A plasma processing apparatus comprising:

[0168] Plasma processing chamber;

[0169] A base disposed within the aforementioned plasma processing chamber;

[0170] A high-frequency power supply electrically connected to the aforementioned base;

[0171] An electrostatic chuck disposed on the upper part of the aforementioned base and comprising an adsorption electrode; and

[0172] The joint where the base and the electrostatic chuck are joined

[0173] An annular central sealing strip and / or an outer peripheral sealing strip are formed on the upper surface of the electrostatic chuck.

[0174] On the upper surface of the base, below the intermediate sealing strip and / or the outer peripheral sealing strip, a heat transfer gas flow path defined by the base and the joint is formed.

[0175] (Postscript 20)

[0176] According to Appendix 19, the plasma processing apparatus includes,

[0177] In the aforementioned base, a heat transfer gas flow path is formed directly below the aforementioned intermediate sealing strip and / or the aforementioned outer peripheral sealing strip.

[0178] (Postscript 21)

[0179] According to the plasma processing apparatus described in Appendix 19 or 20, wherein,

[0180] The electrostatic chuck described above supports the substrate using the aforementioned intermediate sealing strip and / or the aforementioned outer peripheral sealing strip. Heat transfer gas is supplied to the space formed on the aforementioned upper surface by the aforementioned intermediate sealing strip and / or the aforementioned outer peripheral sealing strip and the aforementioned substrate.

[0181] The width and depth of the aforementioned heat transfer gas flow path are configured such that the thermal resistance of the aforementioned intermediate sealing strip portion and / or the aforementioned outer peripheral sealing strip portion is equal to the thermal resistance of the aforementioned spatial portion.

[0182] (Postscript 22)

[0183] A substrate support stage, comprising:

[0184] A base disposed within the aforementioned plasma processing chamber;

[0185] An electrostatic chuck disposed on the upper part of the aforementioned base and comprising an adsorption electrode; and

[0186] The joint where the base and the electrostatic chuck are joined

[0187] An annular central sealing strip and / or an outer peripheral sealing strip are formed on the upper surface of the electrostatic chuck.

[0188] On the upper surface of the base, below the intermediate sealing strip and / or the outer peripheral sealing strip, a heat transfer gas flow path defined by the base and the joint is formed.

[0189] (Postscript 23)

[0190] According to Appendix 22, the substrate support platform, in which,

[0191] In the aforementioned base, a heat transfer gas flow path is formed directly below the aforementioned intermediate sealing strip and / or the aforementioned outer peripheral sealing strip.

[0192] (Postscript 24)

[0193] According to the substrate support platform described in Appendix 22 or 23, wherein,

[0194] The electrostatic chuck described above supports the substrate using the aforementioned intermediate sealing strip and / or the aforementioned outer peripheral sealing strip. Heat transfer gas is supplied to the space formed on the aforementioned upper surface by the aforementioned intermediate sealing strip and / or the aforementioned outer peripheral sealing strip and the aforementioned substrate.

[0195] The width and depth of the aforementioned heat transfer gas flow path are configured such that the thermal resistance of the aforementioned intermediate sealing strip portion and / or the aforementioned outer peripheral sealing strip portion is equal to the thermal resistance of the aforementioned spatial portion.

[0196] Explanation of reference numerals in the attached figures

[0197] 1. Plasma processing device

[0198] 10. Plasma processing chamber

[0199] 11. Substrate support stage

[0200] 30 power supply

[0201] 31 RF Power Supply

[0202] 31a First RF Generation Unit

[0203] 31b Second RF Generation Section

[0204] 32 DC power supply

[0205] 32a First DC Generation Unit

[0206] 32b Second DC Generation Unit

[0207] 40 Exhaust System

[0208] 111 Main Body

[0209] 111a Central Area

[0210] 111b Annular region

[0211] 112 Ring Components

[0212] 120 Etching target film

[0213] 130a, 130b Intermediate Sealing Strip

[0214] 131 Outer circumferential sealing strip

[0215] Spaces 132a, 132b, and 132c

[0216] 1110 Base

[0217] 1110a flow path

[0218] 1110b upper surface

[0219] 1110c lower surface

[0220] 1111 Electrostatic Chuck

[0221] 1111a Ceramic Components

[0222] 1111b Electrostatic electrode

[0223] 1112, 1112a, 1112b Adhesive layers

[0224] 1113 Conductive layer

[0225] 11101a, 11101b diffusion flow paths

[0226] W substrate.

Claims

1. A plasma processing device, characterized in that, include: Plasma processing chamber; A base disposed within the plasma processing chamber; A high-frequency power supply electrically connected to the base; An electrostatic chuck is disposed on the upper part of the base and includes an adsorption electrode; The joint where the base and the electrostatic chuck are joined; and A conductive layer disposed between the base and the adsorption electrode; A heat transfer gas flow path is formed on the upper surface of the base, defined by the base and the joint. The conductive layer has a thickness greater than or equal to the skin depth of the high-frequency electrical power output by the high-frequency power source.

2. The plasma processing apparatus as described in claim 1, characterized in that: The joint contains a conductive material, which functions as the conductive layer.

3. The plasma processing apparatus as described in claim 1, characterized in that: The conductive layer is disposed within the electrostatic chuck.

4. The plasma processing apparatus as described in claim 1, characterized in that: The joint includes a first bonding layer and a second bonding layer disposed below the first bonding layer. The conductive layer is disposed between the first bonding layer and the second bonding layer.

5. The plasma processing apparatus as described in claim 1, characterized in that: The conductive layer is a non-magnetic material with a volume resistivity of 1.0 × 10⁻⁶. -6 Ω·cm~1.0×10 -4 Material formation at Ω·cm.

6. The plasma processing apparatus as described in claim 5, characterized in that: The thickness of the conductive layer is 5μm to 2mm.

7. The plasma processing apparatus as described in claim 1, characterized in that: The frequency of the high-frequency electrical power is in the range of 100kHz to 100MHz.

8. The plasma processing apparatus as described in claim 1, characterized in that: The heat transfer gas flow route is defined by a recess formed on the upper surface of the base and the joint covering the recess.

9. The plasma processing apparatus as described in claim 1, characterized in that: The base is formed of MMC (Metal Matrix Composites). The conductive layer is formed of aluminum.

10. A substrate support stage, characterized in that, include: A base configured within the plasma processing chamber; An electrostatic chuck is disposed on the upper part of the base and includes an adsorption electrode; The joint where the base and the electrostatic chuck are joined; and A conductive layer disposed between the base and the adsorption electrode; A heat transfer gas flow path is formed on the upper surface of the base, defined by the base and the joint. The conductive layer has a thickness exceeding the skin depth at a frequency higher than that supplied to the substrate during plasma processing.

11. The substrate support stage as described in claim 10, characterized in that: The joint contains a conductive material, which functions as the conductive layer.

12. The substrate support stage as described in claim 10, characterized in that: The conductive layer is disposed within the electrostatic chuck.

13. The substrate support stage as described in claim 10, characterized in that: The joint includes a first bonding layer and a second bonding layer disposed below the first bonding layer. The conductive layer is disposed between the first bonding layer and the second bonding layer.

14. The substrate support stage as described in claim 10, characterized in that: The conductive layer is a non-magnetic material with a volume resistivity of 1.0 × 10⁻⁶. -6 Ω·cm~1.0×10 -4 Material formation at Ω·cm.

15. The substrate support stage as described in claim 14, characterized in that: The thickness of the conductive layer is 5μm to 2mm.

16. The substrate support stage as described in claim 10, characterized in that: The frequency of the high-frequency electrical power is in the range of 100kHz to 100MHz.

17. The substrate support stage as described in claim 10, characterized in that: The heat transfer gas flow route is defined by a recess formed on the upper surface of the base and the joint covering the recess.

18. The substrate support stage as described in claim 10, characterized in that: The base is formed of MMC (Metal Matrix Composites). The conductive layer is formed of aluminum.

Images