Semiconductor device, composition for forgery-preventing layer, method for manufacturing semiconductor device, and method for determining authenticity

Abstract

The present application provides a composition for an anti-counterfeit layer for forming an anti-counterfeit layer on a semiconductor device, the composition for an anti-counterfeit layer containing pattern-forming particles formed of an inorganic material having a refractive index n of 3 or more.

Description

Technical Field

[0001] This invention relates to semiconductor devices, anti-counterfeiting layer compositions, methods for manufacturing semiconductor devices, and methods for determining authenticity. Background Technology

[0002] In the semiconductor device industry, the circulation of counterfeit products has become a problem. Therefore, there is a need for technologies capable of determining the authenticity of semiconductor devices. One proposed method is to pre-mark semiconductor devices with a unique pattern to facilitate authentication.

[0003] Regarding the above, Patent Document 1 (Japanese Patent No. 6326900) describes "an anti-counterfeiting display body capable of determining authenticity, comprising a substrate and a display portion for determining authenticity disposed along the substrate." In this anti-counterfeiting display body, the display portion for determining authenticity has fine line portions extending in a curved or zigzag shape with uneven line width, and densely formed with metal atoms. A fingerprint-like pattern is formed on the fine line portions, containing stripe-like patterns arranged parallel to each other at a spacing wider than the line width. From a top view, an alignment mark is formed on the surface of the substrate within the area formed by the fingerprint-like pattern, consisting of recesses or protrusions relative to the surface and having a specific positional relationship with the fingerprint-like pattern. Existing technical documents

[0004] Patent documents Patent Document 1: Japanese Patent No. 6326900 Summary of the Invention (a) Technical problems to be solved

[0005] In the technology described in Patent Document 1, multiple processes are required to obtain the pattern used for determining authenticity. A new technology is desired that can easily form the pattern used for determining authenticity.

[0006] Therefore, the object of the present invention is to provide a new technology that can easily form patterns for determining authenticity.

[0007] The inventors of this application have discovered that the above-mentioned technical problems can be solved by using specific inorganic particles.

[0008] Specifically, one aspect of the present invention relates to an anti-counterfeiting layer composition for forming an anti-counterfeiting layer on a protective layer disposed on a semiconductor substrate. This anti-counterfeiting layer composition contains pattern-forming particles formed from an inorganic material with a refractive index n of 3 or higher.

[0009] Another aspect of the present invention relates to a semiconductor device. This semiconductor device includes an anti-counterfeiting layer. The anti-counterfeiting layer contains pattern-forming particles formed from an inorganic material with a refractive index n of 3 or higher.

[0010] Another aspect of the present invention relates to a method for manufacturing a semiconductor device. The method includes: a step of forming a protective layer on a semiconductor substrate; and a step of forming an anti-counterfeiting layer on the protective layer, said anti-counterfeiting layer containing pattern-forming particles formed of an inorganic material with a refractive index n of 3 or higher. The step of forming the protective layer includes: a step of supplying a protective layer forming composition to the semiconductor substrate; and a step of curing the supplied protective layer forming composition. The step of forming the anti-counterfeiting layer includes: a step of supplying an anti-counterfeiting layer composition; and a step of curing the supplied anti-counterfeiting layer composition.

[0011] Another aspect of the present invention relates to a method for determining the authenticity of a semiconductor device. This method includes: a step of providing a genuine semiconductor device; a genuine product data generation step, wherein the anti-counterfeiting layer of the genuine product is photographed, and genuine product data is generated displaying a pattern formed by pattern-forming particles for determining authenticity; and a determination step, wherein the anti-counterfeiting layer of the object to be determined is observed, and the pattern of the object to be determined for determining authenticity is compared with the genuine product data, thereby determining whether the object to be determined is genuine.

[0012] Another aspect of the present invention relates to a system for determining the authenticity of a semiconductor device. This system comprises: a genuine product data generation unit that generates genuine product data displaying a pattern formed by pattern forming particles for determining authenticity based on image data of the anti-counterfeiting layer of a genuine semiconductor device; a determination object data generation unit that generates determination object data displaying a pattern formed by pattern forming particles for determining authenticity based on image data of the anti-counterfeiting layer of a determination object; and a comparison unit that compares the genuine product data with the determination object data to determine whether the determination object is genuine.

[0013] According to the present invention, a new technology is provided that can easily form patterns for determining authenticity. Attached Figure Description

[0014] Figure 1 This is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment. Figure 2 This is a schematic diagram illustrating an example of an image obtained when observing a security layer through an optical microscope. Figure 3 This is a schematic diagram showing the structure of the authenticity determination system. Figure 4 This is a graph showing the measurement results of the particle size distribution of the Si (silicon) nanofiller in the examples. Detailed Implementation

[0015] Hereinafter, with reference to the accompanying drawings and embodiments thereof, the present invention will be described. These embodiments relate to anti-counterfeiting technology for semiconductor devices. (1) Semiconductor devices Figure 1 This is a schematic cross-sectional view of the semiconductor device 1 according to this embodiment. The semiconductor device 1 has a semiconductor substrate 2, a protective layer 3, and an anti-counterfeiting layer 4.

[0016] Semiconductor substrate 2 is a substrate on which integrated circuit 7 is formed. For example, semiconductor substrate 2 is a semiconductor chip or semiconductor wafer. For example, semiconductor substrate 2 is made of silicon.

[0017] The protective layer 3 is provided to protect the semiconductor substrate 2. Figure 1 In the example shown, the protective layer 3 is disposed on the back side of the semiconductor substrate 2 (the side opposite to the side where the integrated circuit 7 is formed). That is, the protective layer 3 is a protective film on the back side of the semiconductor substrate 2.

[0018] The anti-counterfeiting layer 4 is used to determine the authenticity of the semiconductor device 1. The anti-counterfeiting layer 4 is disposed on the outermost layer of the semiconductor device 1. Specifically, the anti-counterfeiting layer 4 is disposed on the protective layer 3.

[0019] The anti-counterfeiting layer 4 contains pattern-forming particles 5. The pattern-forming particles 5 are particles that form patterns used to determine authenticity. The pattern-forming particles 5 are formed from inorganic materials with a refractive index n of 3 or higher. The pattern-forming particles 5 are randomly dispersed in the anti-counterfeiting layer 4.

[0020] In this embodiment, the anti-counterfeiting layer 4 of the genuine product is photographed in advance using an imaging device equipped with an optical microscope, and genuine product data is generated. Genuine product data displays the pattern used to determine authenticity. During authenticity verification, the anti-counterfeiting layer of the object being verified is observed using an optical microscope. Then, the pattern used to determine authenticity of the object is compared with the genuine product data. Thus, it can be determined whether the object being verified is genuine.

[0021] In this embodiment, since the pattern-forming particles 5 are formed from an inorganic material with a refractive index n of 3 or higher, patterns for determining authenticity can be easily realized. The pattern-forming particles with this refractive index generate scattered light based on a principle called Mie resonance. Whenever scattered light in the visible light region is generated, the pattern-forming particles will show color and can be visually identified. The Mie resonance phenomenon (see, for example, Japanese Patent No. 7277923) is as follows: when light with a wavelength λ (nm) is incident on a material (refractive index n), the effective wavelength in the material becomes λ / n (nm). When the effective wavelength λ / n (nm) of the light becomes equal to the particle diameter, a standing wave is formed, and the lowest-order Mie resonance, i.e., electromagnetic dipole resonance, occurs in the optical region. In other words, particles using an inorganic material with a refractive index of 3 or higher selectively and strongly scatter light of a specific wavelength through Mie resonance.

[0022] Figure 2This is a schematic diagram illustrating an example of an image obtained when observing the anti-counterfeiting layer 4 using an optical microscope. For example... Figure 2 As shown, in the anti-counterfeiting layer 4, each pattern-forming particle 5 is observed as a bright spot. As long as the pattern-forming particles 5 are randomly dispersed in the anti-counterfeiting layer 4, the observed bright spot pattern will be inherent to the semiconductor device 1. Furthermore, this pattern cannot be observed with the naked eye and is a complex pattern that is difficult to counterfeit. Therefore, the bright spot pattern can be used as a pattern for determining authenticity. That is, according to this embodiment, simply by randomly dispersing the pattern-forming particles 5, a pattern for determining authenticity can be easily formed. Additionally, in Figure 2 In the example shown, although a bright spot that can be visually observed through a microscope is shown, the bright spot is not limited to this. For example, it can also be a point that scatters light in the near-infrared region but does not produce much visible light. In this case, the bright spot is identified by an infrared sensor rather than by visual identification.

[0023] Furthermore, the color development based on Mie resonance is due to structural color. Color development caused by structural color is virtually non-fading. Therefore, highly durable patterns can be formed for determining authenticity. The generation of scattered light outside the visible light region is similar; the pattern-forming particles semi-permanently generate scattered light through Mie resonance.

[0024] Furthermore, the wavelength of the scattered light caused by Mie resonance depends on the particle size. Typically, the particle size distribution of fine particles has a certain width. Therefore, as the pattern-forming particle 5 described above, by using a material containing multiple particles of different sizes rather than multiple particles of uniform size, each particle can generate scattered light of different wavelengths in the visible light region, thereby producing bright spots of colors corresponding to their respective particle sizes. That is, since the pattern-forming particle 5 contains multiple particles displaying different colors, information including the position of the bright spots and the colors displayed by the bright spots can be used to determine the authenticity of the pattern. Because the amount of information used for authenticity determination is increased, authenticity determination can be performed more reliably. Additionally, when the pattern-forming particle 5 contains particles constructed using a method of color development through Mie resonance, by observing multiple bright spots displaying different colors in the observed bright spot pattern, it can be confirmed that the pattern-forming particle 5 contains multiple particles of different sizes.

[0025] The above is a summary of this implementation plan. Next, the details of this implementation plan will be explained. (2) Anti-counterfeiting layer First, the anti-counterfeiting layer 4 will be explained. As mentioned above, the anti-counterfeiting layer 4 contains pattern-forming particles.

[0026] The thickness of the anti-counterfeiting layer is, for example, 0.1~20μm, preferably 0.2~10μm. More preferably, it is 0.5~5μm.

[0027] The anti-counterfeiting layer 4 is formed from an anti-counterfeiting layer composition. The anti-counterfeiting layer composition can be provided in the form of a film, but it can also be provided, for example, in a liquid form containing a solvent, or in the form of a solvent-free liquid curable composition incorporating low-molecular-weight polymeric monomers and fluidized. The anti-counterfeiting layer composition is preferably a resin composition. That is, the anti-counterfeiting layer 4 is a cured resin composition. The anti-counterfeiting layer 4 is formed by supplying a curable anti-counterfeiting layer composition to the protective layer 3 and then curing the composition.

[0028] The composition of the anti-counterfeiting layer is described below, along with an example of the structure of the anti-counterfeiting layer. (Pattern forming particles) As described above, the anti-counterfeiting layer composition contains pattern-forming particles.

[0029] The refractive index n of the inorganic material forming the pattern particles should be 3 or higher. If the refractive index n is 3 or higher, light of a specific wavelength will be selectively scattered through Mie resonance. Therefore, bright spots caused by individual particles become easily identifiable. The refractive index n is preferably 3.5 or higher, more preferably 4.0 or higher. A high refractive index n results in high reflectivity, and consequently, high color rendering. As a result, patterns used to determine authenticity become easier to identify.

[0030] As described above, the constituent materials of the pattern-forming particles are inorganic materials. Using inorganic materials improves the durability of the pattern. For example, when patterns are formed using pigments and dyes made from organic materials, the patterns are prone to fading. However, by using inorganic materials, durability is improved compared to using organic materials.

[0031] The inorganic material used to form the pattern-forming particles is preferably not a metal monomer. When metal monomers are used, deterioration due to oxidation or other factors can sometimes occur. Furthermore, metal elements can sometimes migrate from the pattern-forming particles to their surroundings, resulting in changes to the pattern. By using inorganic materials other than metal monomers, changes in the pattern caused by deterioration and migration can be suppressed.

[0032] Specific examples of inorganic materials that form patterned particles include: crystals of metal compounds, metalloids, and metalloid compounds. Metal compounds include those formed by a metal and at least one element selected from the group consisting of oxygen, nitrogen, phosphorus, arsenic, and sulfur. Metalloids include: boron, silicon (Si), germanium, arsenic, antimony, tellurium, selenium, polonium, and arsenic. Metalloid compounds include those formed by a metalloid and at least one element selected from the group consisting of oxygen, nitrogen, phosphorus, arsenic, and sulfur.

[0033] Specific examples of inorganic materials that form patterned particles include silicon (refractive index 4.32), GaAs (refractive index 4.27), GaP (refractive index 3.6), and InP (refractive index 3.0).

[0034] In a particularly preferred embodiment, the pattern-forming particles are silicon particles, more preferably crystalline silicon particles. Silicon particles strongly and selectively scatter light of specific wavelengths. Furthermore, patterns formed using silicon particles exhibit extremely high durability and heat resistance. Therefore, they are particularly suitable as a constituent material for pattern-forming particles.

[0035] The average particle size of the pattern-forming particles is, for example, 0.09 to 5.0 μm, preferably 0.1 to 2.0 μm. Within this range, a single particle will produce high-intensity scattered light in the visible light region (blue to red) or the near-infrared region (800 to 1200 nm). Therefore, the pattern formed by the pattern-forming particles becomes easily identifiable. Furthermore, the average particle size referred to herein is the median diameter D50 in the particle size distribution measured using a laser diffraction particle size distribution measuring device.

[0036] The pattern-forming particles contained in the anti-counterfeiting layer 4 preferably have a particle size distribution with multiple peaks. As described above, each pattern-forming particle displays a color corresponding to its particle size. As long as a substance containing multiple particles of different sizes is used as the pattern-forming particles, each particle will generate a bright spot with a color corresponding to its respective particle size. As long as the particle size distribution of the pattern-forming particles has multiple peaks, it becomes easy to obtain patterns with bright spots of different colors. Therefore, the amount of information used for authenticity determination can be increased, and authenticity determination can be made more reliably.

[0037] In a preferred embodiment, the pattern-forming particles are silicon particles containing silicon particles with a particle size of 90-300 nm. More preferably, the cumulative abundance of the pattern-forming particles in the 90-300 nm range is 20% or more, and even more preferably 25% or more. Regarding the particle size distribution of the pattern-forming particles, it is acceptable as long as the cumulative abundance in the 90-300 nm range is 100% or less, or even 70% or less. Within this particle size range, each particle becomes easier to display color corresponding to its particle size, thus easily increasing the density of bright spots in the pattern used to determine authenticity.

[0038] In a preferred embodiment, the pattern-forming particles are silicon particles containing silicon particles with a particle size of 800-1200 nm. More preferably, the cumulative abundance of the pattern-forming particles in the 800-1200 nm particle size distribution is 15% or more, and even more preferably 25% or more. Regarding the particle size distribution of the pattern-forming particles, it is acceptable as long as the upper limit of the cumulative abundance in the 800-1200 nm range is 100% or less, or even 70% or less. Within this particle size range, each particle becomes more likely to generate scattered light in the near-infrared region corresponding to its particle size, thus easily increasing the density of bright spots in the pattern used to determine authenticity. Furthermore, when the pattern-forming particles are silicon particles, since the bright spots can be observed by the infrared sensor, it can be confirmed that the pattern-forming particles contain silicon particles with a particle size of 800-1200 nm.

[0039] The content of pattern-forming particles is based on the total mass of the anti-counterfeiting layer composition excluding the solvent, and is, for example, 0.01 to 5% by mass, preferably 0.05 to 1% by mass. As long as it is within this range, the pattern-forming particles will be dispersed in a dispersion state suitable for use as a pattern for determining authenticity.

[0040] Furthermore, the type of pattern-forming particles within the anti-counterfeiting layer can be determined by directly analyzing the anti-counterfeiting layer, or by extracting the pattern-forming particles from the anti-counterfeiting layer and observing their manner of extraction. For example, if the anti-counterfeiting layer is a resin composition, the pattern-forming particles can be selectively extracted by dissolving the resin components using a solvent. Alternatively, the anti-counterfeiting layer can be calcined to remove components other than the pattern-forming particles that function as a binder, thereby extracting only the pattern-forming particles. (Curing resin composition) As described above, the resin composition for the anti-counterfeiting layer is preferably a resin composition with curable properties. The anti-counterfeiting layer composition can be a thermosetting composition, an energy-curable composition, or both a thermosetting composition and an energy-curable composition.

[0041] As a composition for an anti-counterfeiting layer that is cured by energy rays, for example, a composition containing an energy-curable compound (e.g., a monomer or oligomer) and a photopolymerization initiator can be used.

[0042] Examples of energy-curable compounds include: trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol (meth)acrylate, and other poly(meth)acrylate monomers; urethane (meth)acrylates; polyester (meth)acrylates; polyether (meth)acrylates; and epoxy (meth)acrylates, and other oligomers. Polyester (meth)acrylates are preferred.

[0043] As an energy-ray curable compound, it can also be used in polymers with functional groups such as (meth)acryloyl or vinyl groups on the side chain that are capable of photopolymerization. For example, acrylic polymers can be used as such polymers, and a method is known whereby an acrylic polymer with reactive functional groups such as hydroxyl groups on the side chain is reacted with a compound such as methacryloyloxyisocyanate that is capable of reacting with the aforementioned reactive functional groups and has functional groups capable of photopolymerization, thereby adding photopolymerizable functional groups to the side chain.

[0044] When using these energy-curable compounds, photopolymerization initiators are preferably photoradical polymerization initiators.

[0045] The content of the energy-curable compound is based on the total mass of the anti-counterfeiting layer composition excluding the solvent, for example, 70 to 99% by mass, preferably 80 to 95% by mass.

[0046] The photopolymerization initiator is not particularly limited. The content of the photopolymerization initiator is based on the total mass of the anti-counterfeiting layer composition excluding the solvent, for example, 0.5 to 15% by mass, preferably 1 to 10% by mass.

[0047] Furthermore, the anti-counterfeiting layer composition may also contain a silane coupling agent. By including a silane coupling agent in the anti-counterfeiting layer, when the protective layer contains inorganic fillers, the adhesion between the anti-counterfeiting layer and the protective layer can be improved, thereby preventing the anti-counterfeiting layer from peeling or falling off. As a silane coupling agent, based on the total mass of the anti-counterfeiting layer composition excluding the solvent, it is, for example, 0.5 to 15% by mass, preferably 1 to 10% by mass.

[0048] Furthermore, as mentioned above, the anti-counterfeiting layer composition can be a thermosetting composition. In this case, as the anti-counterfeiting layer composition, for example, a composition containing the polymer component (A) and the thermosetting component (B) described later for the "protective layer forming composition" can be used. (3) Protective layer As described above, protective layer 3 is a layer used to protect the semiconductor substrate 2. Figure 1In the example shown, protective layer 3 is a back protective film of the semiconductor substrate 2. More preferably, protective layer 3 is a back protective film disposed on the back side of the semiconductor substrate 2 (e.g., a semiconductor chip) mounted in a flip-chip configuration. However, protective layer 3 does not necessarily have to be a back protective film. Protective layer 3 can be any layer that protects the semiconductor substrate 2 and can serve as the base for the anti-counterfeiting layer 4. For example, protective layer 3 can also be a sealing material layer that seals the semiconductor substrate 2. That is, it can also be a layer formed of a so-called sealing resin.

[0049] The protective layer 3 is formed from a protective layer forming composition. The protective layer forming composition is preferably a curable composition. For example, the protective layer 3 is formed by supplying the protective layer forming composition onto the semiconductor substrate 2 and then curing the supplied protective layer forming composition. The protective layer forming composition can be a thermosetting composition or an energy-curable composition. Alternatively, it can be a composition possessing both thermosetting and energy-curable properties.

[0050] When the protective film 3 is a back protective film, the protective layer forming composition is preferably provided in film form. For example, a film is prepared in which the protective layer forming composition is supported on a support film. Next, the protective layer forming composition is transferred onto the semiconductor substrate 2 using the protective layer forming film. Then, the transferred protective layer forming composition is cured to form the protective layer 3.

[0051] On the other hand, when the protective layer 3 is a sealing material layer, the protective layer 3 can also be formed by molding the protective layer forming composition on the semiconductor substrate 2 using a mold.

[0052] However, in the preferred embodiment, the protective layer 3 is a back protective film formed using a protective layer forming film. When the protective film 3 is a sealing material layer and the mold is used for molding the sealing material layer, a release agent is typically used. Therefore, components of the release agent may sometimes transfer to the surface of the protective film 3. Sometimes, the adhesion of the anti-counterfeiting layer 4 may decrease due to the transferred components of the release agent. However, when a protective layer forming film is used to form the back protective film, the release film, which serves as the support film for the protective layer forming film, is less prone to release agent transfer. Therefore, from an adhesion perspective, it is preferable to use a back protective film formed using a protective film forming film as the protective layer 3. That is, it is preferable to use the back protective film formed in the above manner as the base layer of the anti-counterfeiting layer 4.

[0053] Furthermore, the surface of the back protective film formed by the transfer of the protective layer forming film is more likely to be smooth than the surface of the sealing material layer obtained by using a mold. When the surface of the protective layer 3 as the base is smoother, it is easier to obtain a good contrast when photographing the anti-counterfeiting layer 4. As a result, the pattern used to determine authenticity can be easily and correctly identified. From this perspective, it is preferable to use the back protective film formed by the protective layer forming film as the base layer of the anti-counterfeiting layer 4 (i.e., as the protective layer 3).

[0054] When the protective layer 3 is a back protective film, the thickness of the protective layer 3 is, for example, 1 to 100 μm, preferably 5 to 50 μm.

[0055] As described above, the protective layer 3 is formed by the protective layer forming composition. As described above, the protective layer forming composition can be provided in the form of a film, but it can also be provided, for example, in a liquid form containing a solvent, or in the form of a solvent-free liquid curable composition incorporating and fluidizing low-molecular-weight polymeric monomers. Hereinafter, the structure of the protective layer 3 will be described in further detail by explaining the composition of the protective layer forming composition. (Thermosetting protective layer formation composition) In the case of a thermosetting composition, the protective layer forming composition contains, for example, a polymer component (A), a thermosetting component (B), a curing accelerator (C), a silane coupling agent (D), and a colorant (E). (A) Polymer composition Examples of polymer components (A) include: acrylic resins (e.g., resins obtained by addition polymerization of monomers containing at least acrylate monomers), polyesters, urethane resins (e.g., resins having urethane bonds), urethane acrylic resins, silicone resins (e.g., resins having siloxane bonds), rubber resins (e.g., resins having a rubber structure), and phenoxy resins, with acrylic resins being preferred.

[0056] The content of polymer component (A) relative to the total mass of the composition for forming the protective layer excluding the solvent is, for example, 5 to 50% by mass, preferably 10 to 40% by mass, and more preferably 15 to 35% by mass. (B) Thermosetting components Examples of thermosetting components (B) include epoxy thermosetting resins, thermosetting polyimides, thermosetting polyurethanes, unsaturated polyesters, and silicone rubbers. Epoxy thermosetting resins are preferred.

[0057] As an epoxy thermosetting resin, for example, an epoxy thermosetting resin composed of epoxy resin (B1) and thermosetting agent (B2) can be used.

[0058] Examples of epoxy resins (B1) include: multifunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrides, o-cresol phenolic varnish epoxy resins, dicyclopentadiene type epoxy resins, biphenyl type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, and phenylene skeleton type epoxy resins, etc., epoxy compounds with more than two functionalities. Among these epoxy resins, bisphenol A type epoxy resins are preferred.

[0059] The thermosetting agent (B2) is a substance that functions as a curing agent for epoxy resins. Examples of thermosetting agents include compounds having at least two functional groups in one molecule that can react with epoxy groups. Examples of such functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and groups formed by anhydride conversion of acid groups. Preferably, the thermosetting agent comprises an amine-based curing agent having an amino group. Examples of amine-based curing agents include dicyandiamide.

[0060] The content of thermosetting component (B) (e.g., the total amount of epoxy resin (B1) and thermosetting agent (B2)) relative to the total mass of the composition for forming the protective layer excluding the solvent is, for example, 5 to 30% by mass, preferably 15 to 20% by mass. (C) Curing accelerator Examples of curing accelerators (C) include: tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles formed by replacing at least one hydrogen atom with a group other than a hydrogen atom) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organophosphines (phosphines formed by replacing at least one hydrogen atom with an organic group) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. Preferably, the curing accelerator (C) comprises 2-phenyl-4,5-dihydroxymethylimidazole.

[0061] The content of curing accelerator (C) is, for example, 0.1 to 1% by mass relative to the total mass of the composition for forming the protective layer excluding the solvent. (D) Silane coupling agent Examples of silane coupling agents (D) include: 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, and 3-(2-aminoethylamino)propyltrimethoxysilane. Silanes, 3-(2-aminoethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-ureopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfide, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, and imidazole silanes, etc. Preferably, the silane coupling agent (D) comprises 3-epoxypropoxypropyltrimethoxysilane.

[0062] The content of silane coupling agent (D) is, for example, 0.1 to 1% by mass relative to the total mass of the composition for forming the protective layer excluding the solvent. (E) Coloring agent As the colorant (E), inorganic pigments, organic pigments, and organic dyes can be used. Among these colorants, inorganic pigments are preferred because they fade less. Examples of inorganic pigments include: carbon black, cobalt-based pigments, iron-based pigments, chromium-based pigments, titanium-based pigments, vanadium-based pigments, zirconium-based pigments, molybdenum-based pigments, ruthenium-based pigments, platinum-based pigments, ITO (indium tin oxide) pigments, and ATO (antimony tin oxide) pigments. Carbon black is a preferred colorant (E).

[0063] The content of colorant (E) relative to the total mass of the composition for forming the protective layer excluding the solvent is, for example, 0.1 to 10% by mass, preferably 0.5 to 5% by mass. (Composition for forming a protective layer with energy-curable properties) Furthermore, as described above, the composition for forming the protective layer can also be an energy-curable composition. In this case, the composition for forming the protective layer can be, for example, a composition containing the aforementioned energy-curable compound for the "anti-counterfeiting layer" and a photopolymerization initiator.

[0064] Furthermore, if the curing type of the protective layer forming composition is the same as that of the anti-counterfeiting layer composition, the protective layer forming composition and the anti-counterfeiting layer composition can be cured together. (filler) The composition for forming the protective layer may also contain fillers. By using fillers, the properties of the protective layer can be adjusted. For example, the properties of the protective layer can be made to approximate the properties of the semiconductor substrate 2.

[0065] The filler content in the protective layer forming composition (i.e., the filler content in the protective layer) is preferably 30 to 70% by mass relative to the total mass of the protective layer forming composition (converted to the effective components excluding the solvent). The filler content is more preferably 35 to 65% by mass relative to the total mass of the protective layer.

[0066] The material of the filler is not particularly limited. For example, the filler can be inorganic or organic. Inorganic filler is preferred. Examples of inorganic fillers include at least one selected from the group consisting of silica, alumina, talc, calcium carbonate, titanium dioxide, hematite (benga), silicon carbide, and boron nitride. Silica is the preferred filler.

[0067] The size of the filler is not particularly limited. The average particle size of the filler is, for example, 0.05 to 5 μm, preferably 0.1 to 1.0 μm, and more preferably 0.1 to 0.5 μm. The average particle size referred to herein is the value measured using laser diffraction particle size distribution.

[0068] Furthermore, spherical filler is preferred. Using spherical filler makes it easier to obtain the same pattern for determining authenticity, unaffected by the lighting environment. That is, when observing the anti-counterfeiting layer, illumination light is incident on the protective layer 3. The incident illumination light is reflected by the filler. In this case, as long as the filler is spherical, the intensity and direction of the reflected light caused by the filler are less dependent on the incident direction of the illumination light. Therefore, even with different lighting environments, the same pattern for determining authenticity is easily obtained. Thus, authenticity can be determined with good accuracy.

[0069] The spherical packing can be either oblate or spherical. Spherical packing is preferably spherical.

[0070] Preferably, 80% or more of the total packing material is spherical packing. More preferably, 90% or more of the total packing material is spherical packing. Even more preferably, 95% or more of the total packing material is spherical packing. Most preferably, substantially all of the packing material is spherical packing. (4) Manufacturing method Next, an example will be given to illustrate the manufacturing method of semiconductor device 1.

[0071] First, a semiconductor substrate 2 is prepared, and a protective layer 3 is formed on the semiconductor substrate 2. Specifically, a protective layer forming composition is supplied onto the semiconductor substrate 2. Then, the protective layer forming composition is cured. Thus, the protective layer 3 is formed. Next, an anti-counterfeiting layer composition is supplied onto the protective layer 3. Then, the supplied anti-counterfeiting layer composition is cured. Thus, an anti-counterfeiting layer 4 is formed. Thus, a semiconductor device 1 is obtained.

[0072] Alternatively, the curing of the protective layer forming composition and the anti-counterfeiting layer composition can be performed simultaneously. That is, the protective layer forming composition is supplied onto the semiconductor substrate 2. Then, before the protective layer forming composition cures, the anti-counterfeiting layer composition is supplied onto the protective layer forming composition. Then, the protective layer forming composition and the anti-counterfeiting layer composition are cured simultaneously. For example, if both the protective layer forming composition and the anti-counterfeiting layer composition are thermosetting, they can be cured simultaneously by heating. Or, if both the protective layer forming composition and the anti-counterfeiting layer composition are ray-curing, they can be cured simultaneously by irradiation with ray energy. This shortens the manufacturing process. Furthermore, the curing of the anti-counterfeiting layer composition can also be performed before the curing of the protective layer forming composition. However, in this case, if the protective layer forming composition and the anti-counterfeiting layer composition have the same curing type, it is likely that at least a portion of the protective layer forming composition will be cured simultaneously when the anti-counterfeiting layer composition is cured.

[0073] Semiconductor device 1 can be manufactured using either a wafer-level packaging process or a panel-level packaging process. Examples of wafer-level packaging processes include wafer-level chip-scale packaging (WLCSP) and fan-out wafer-level packaging. Examples of panel-level packaging processes include fan-out panel-level packaging. In these packaging processes, a protective layer 3 is formed on multiple semiconductor devices 1 (typically multiple semiconductor chips) at once. Then, the multiple semiconductor devices 1 are individually assembled. Here, an anti-counterfeiting layer 4 can be formed at once after the protective layer 3 is formed but before individual assembly. Because the anti-counterfeiting layer 4 can be formed on multiple semiconductor devices 1 at once, efficiency is high.

[0074] In a suitable example, the semiconductor substrate 2 is a face-down semiconductor chip. During manufacturing, a protective layer 3 is formed as a back protective film on the back side of the wafer used for the face-down semiconductor chip. (5) Methods and systems for determining authenticity Next, the methods and systems for determining authenticity will be explained. Figure 3 The diagram illustrates the functional block diagram of the authenticity verification system 6. The authenticity verification system 6 includes a genuine product data generation device 9, a server 10, and an authenticity verification device 11. All these components can be implemented using a computer.

[0075] The genuine product data generation device 9 is a device for generating genuine product data. The genuine product data generation device 9 includes a genuine product data generation unit 17. The genuine product data generation unit 17 is implemented, for example, by using a computing device such as a CPU (central processing unit) to execute a genuine product data generation program stored in a memory device such as a ROM (read-only memory).

[0076] Server 10 is configured to store genuine product data. Server 10 is connected in a manner that enables communication with genuine product data generation device 9 and authenticity determination device 11.

[0077] The authenticity determination device 11 is configured to determine the authenticity of an object to be determined. The authenticity determination device 11 includes an object data generation unit 14 and a comparison unit 15. These are implemented by a calculation device executing an authenticity determination program stored in a memory device.

[0078] The above describes the structure of the authenticity verification system 6. Next, the authenticity verification method will be explained. (Step S1: Generating Authentic Product Data) When determining authenticity, genuine product data is generated in advance. Specifically, first, a genuine semiconductor device is provided. Then, the anti-counterfeiting layer of the genuine product is photographed using an imaging device 8 equipped with an optical microscope. The acquired image data is transmitted from the imaging device 8 to the genuine product data generation device 9. In the genuine product data generation device 9, the genuine product data generation unit 17 generates genuine product data based on the acquired image data. The genuine product data is data displaying the pattern of the genuine product used for determining authenticity.

[0079] Specifically, the product data generation unit 17 generates product data by displaying data on the positions of bright spots originating from the pattern-forming particles. In addition to the position of the bright spots, the product data may also include information such as the color and brightness of the bright spots. When the pattern-forming particles contain multiple particles displaying different colors, the information on the color of the bright spots can include information on the different colors displayed. Furthermore, the product data generation unit 17 can generate product data using the image data itself acquired by the imaging device 8, or it can extract relevant information about the bright spots from the image data for purposes such as file size compression. For example, relevant information about the bright spots can be extracted by analyzing image data using a computer or similar device. The generated product data is transmitted from the product data generation device 9 to the server 10 for storage.

[0080] Furthermore, the photography of genuine products can be conducted either after the product is manufactured or during its manufacturing process. That is, genuine semiconductor devices can be semi-finished products. For example, as long as the appearance of the anti-counterfeiting layer remains unchanged before and after curing, the anti-counterfeiting layer before curing can also be photographed. (Step S2: Determine) When determining the authenticity of an object, the anti-counterfeiting layer of the object is observed using an imaging device 12 equipped with an optical microscope to obtain image data. The obtained image data is then acquired by the object data generation unit 14 of the authenticity determination device 11. The object data generation unit 14 generates object data based on the obtained image data. The object data is data displaying a pattern of the object used for authenticity determination. Similar to genuine product data, the image data itself can be used as the object data, or data processed such as image analysis can be used as the object data.

[0081] Furthermore, in the authenticity determination device 11, the comparison unit 15 connects to the server 10 via a network or the like to acquire genuine product data. Then, the comparison unit 15 compares the genuine product data with the determination object data generated by the determination object data generation unit 14 to determine whether the patterns are consistent. For example, the comparison unit 15 uses mean squared error (MSE) or the like to calculate the similarity between the genuine product data and the determination object data, and based on the calculated similarity, determines whether the determination object data is consistent with the genuine product data. Afterwards, the comparison unit 15 outputs the determination result via an output device (not shown).

[0082] The above is a summary of the method for determining the authenticity of this implementation plan.

[0083] In addition, when photographing genuine products and verifying the object, illumination light is shone onto the anti-counterfeiting layer. There are no particular restrictions on the type of illumination at this time. For example, it can be side lighting, direct lighting, or a combination of both.

[0084] In addition, when photographing genuine products and identifying objects, it is preferable to acquire images at a magnification of 300 to 3000 times.

[0085] Furthermore, there are no particular limitations on the size of the area used for comparison between the genuine product and the object to be judged. For example, data from an area with a side size of 10 μm or more can be used for comparison. Preferably, data from a rectangular area with a side size of 10 to 1000 μm is used for comparison.

[0086] Furthermore, this embodiment describes the case where the authentication process (step S2) is performed by the authenticity authentication device 11. However, the authentication process (step S2) can also be performed visually. That is, the anti-counterfeiting layer of the object to be authenticated can be observed using an optical microscope, and the authentication pattern of the object to be authenticated can be visually compared with the pattern used for authentication of genuine products. Example

[0087] Next, to illustrate the invention in more detail, embodiments implemented by the inventors of this application will be described. However, the invention should not be construed as limited to the following embodiments. (Sample A) <Manufacturing of Films for Protective Layer Formation> (Preparation of the composition for forming the protective layer) The following raw materials are mixed with methyl ethyl ketone solvent and stirred at 23°C for 60 minutes to prepare a protective layer forming composition with an active ingredient (excluding the solvent) content of 52% by mass. In the following description, the amount of each component indicates the amount of the active ingredient. (1) Acrylic polymer (20 parts by mass): an acrylic polymer (weight average molecular weight: 600,000) synthesized by copolymerizing 15 parts by mass of n-butyl acrylate, 10 parts by mass of methyl methacrylate, 60 parts by mass of methyl acrylate and 15 parts by mass of 2-hydroxyethyl acrylate. (2) Bisphenol A type liquid epoxy resin (15 parts by weight): "BPA328" manufactured by NIPPON SHOKUBAI CO., LTD. (3) Bisphenol A type epoxy resin (1.8 parts by weight): "jER1055" manufactured by Mitsubishi Chemical Corporation (4) Dicyandiamide (0.45 parts by weight): a heat-active latent epoxy resin curing agent, "Adeka Hardener EH-3636AS" manufactured by ADEKA. (5) 2-Phenylon-4,5-Dihydroxymethylimidazol (0.45 parts by weight), "Curezol 2PHZ" manufactured by Shikoku Chemical Industry Co., Ltd. (6) Spherical silica filler (60 parts by weight): Admatechs' "SC105G-MMQ: Spherical Silica" (average particle size 0.3 μm) (7) Silane coupling agent: 3-epoxypropoxypropyltrimethoxysilane (3-glycidoxypropyltrimethoxysilane) (0.4 parts by weight), Shin-Etsu Chemical Industry Co., Ltd.'s "KBM403" (8) Colorant: Carbon black (1.9 parts by weight), "MA600B" manufactured by Mitsubishi Chemical Corporation (average particle size 28nm). (Formation of the protective layer film) Prepare a release film with a peel-off treatment surface. Then, apply the prepared protective layer forming composition to the peel-off treatment surface using a blade coater. After coating, dry it at 110°C for 2 minutes. The thickness of the dried protective layer forming composition is 25 μm. Further, attach the peel-off treatment surfaces of other release films to this protective layer forming composition to form a protective layer forming film sandwiched between two release films. (Manufacturing of silicon chips with a back protective film) A 6-inch silicon wafer (100 μm thick) with a #2000 polished surface is prepared as the semiconductor substrate. Then, a release film is peeled off from the protective layer forming film, and the exposed protective layer forming composition is attached to the silicon wafer. Additionally, another release film remaining on the protective layer forming film is peeled off and removed. Next, the silicon wafer is heat-treated at 130°C for 2 hours, thereby curing the protective layer forming composition and forming a protective layer (back protective film) on the silicon wafer. (Preparation of the composition for anti-counterfeiting layer) On the other hand, a composition for preparing an anti-counterfeiting layer is prepared. Specifically, 91 parts by weight of polyester acrylate (Arkema Corporation; CN2270NS), 0.1 parts by weight of silica filler (ADMATECHS Corporation; SC2050MA; average particle size 0.5μm), 4.6 parts by weight of photoinitiator (IGM Resins; Omirad 127D) and 4.6 parts by weight of silane coupling agent (Shin-Etsu Chemical Industry Co., Ltd.; KBM-1083) are mixed to prepare the composition for the anti-counterfeiting layer.

[0088] In addition, for Si nanofillers, the particle size distribution was measured using a laser diffraction particle size distribution measuring device (Mastersizer 3000 (manufactured by Malvern Panalytical)), and the results were obtained. Figure 4 The diagram shown. Additionally... Figure 4 The horizontal axis of the graph shows the diameter of the filler (μm), and the vertical axis shows the abundance (%). For example... Figure 4 As shown, a particle size distribution with two peaks was obtained. The cumulative abundance in the 90–300 nm range was 34%. In addition, the cumulative abundance in the 800–1200 nm range was 27.8%.

[0089] Using a YBA-type Baker Applicator manufactured by YOSHIMITSU SEIKI, the prepared anti-counterfeiting layer was coated onto the exposed back protective film with the composition. Then, the composition was cured by UV (ultraviolet) irradiation under the following conditions to obtain an anti-counterfeiting layer with a thickness of 5 μm.

[0090] Equipment: UV irradiation machine (manufactured by GS Yuasa International Ltd.; CSN2-40) Conditions: UV irradiance of 360 mJ / cm² under N₂ purging. 2 The irradiation rate is 7 m / min, and the oxygen concentration is below 0.3%. Through the above steps, a silicon wafer for prototype A is obtained. This silicon wafer is attached to an Adwill D-485H manufactured by Lintec Corporation as an adhesive sheet for semiconductor processing, and is cut into 10mm × 10mm squares using a dicing machine (manufactured by Disco Corporation; DFD6362) to obtain a semiconductor chip with an anti-counterfeiting layer for prototype A, which is an analog semiconductor device. (Sample B) By using a different chip than that used to create prototype A (which is formed by monolithically dividing the silicon wafer used to obtain prototype A), a semiconductor chip with an anti-counterfeiting layer is obtained for prototype B. (evaluate) The anti-counterfeiting layer of specimen A was photographed using a digital microscope (KEYENCE; VHX-7000) with omnidirectional illumination (ring illumination) and side lighting, obtaining image data A1. The optical magnification was set to 500x. After a period of time, the anti-counterfeiting layer of specimen A was photographed again, obtaining image data A2. Furthermore, specimen A was intentionally rotated 20° and the anti-counterfeiting layer was photographed again, obtaining image data A3. Additionally, the anti-counterfeiting layer of specimen B was photographed under the same conditions as specimen A, obtaining image data B1. Furthermore, multiple bright spots appearing in different colors were observed in each image.

[0091] For image data A1, information including the color, brightness, and location of the bright spots is extracted to obtain feature data a1. The same data processing is performed on image data A2, A3, and B1 to obtain feature data a2, a3, and b1, respectively. Then, for each data point in feature data a2, a3, and b1, the similarity to feature data a1 is calculated using the mean squared error (MSE), and this is used for evaluation. Furthermore, the calculation target area is set to approximately 400 μm square.

[0092] The mean squared error (MSE) results are shown in Table 1. As shown in Table 1, the MSE of image data A2 and image data A3 is significantly smaller than that of image data B1. That is, the similarity is high. Therefore, it can be understood that by setting an appropriate baseline value (e.g., "1"), it is possible to distinguish between genuine and counterfeit products (other prototypes made using the exact same steps as the genuine product).

[0093] [Table 1]

[0094] [appendix] The representative components of this implementation plan are summarized in the appendix below. (Appendix 1) An anti-counterfeiting layer composition is used to form an anti-counterfeiting layer on a protective layer disposed on a semiconductor substrate, wherein the anti-counterfeiting layer composition contains pattern-forming particles formed of an inorganic material with a refractive index n of 3 or higher. (Appendix 2) According to the anti-counterfeiting layer composition described in Appendix 1, the pattern-forming particles are particles formed in a manner that generates scattered light through Mie resonance. (Appendix 3) A semiconductor device includes a semiconductor substrate, a protective layer formed on the semiconductor substrate, and an anti-counterfeiting layer formed on the protective layer, the anti-counterfeiting layer containing pattern-forming particles formed of an inorganic material with a refractive index n of 3 or higher. (Appendix 4) A method for manufacturing a semiconductor device, comprising: The process of forming a protective layer on a semiconductor substrate; and In the process of forming an anti-counterfeiting layer on the protective layer, the anti-counterfeiting layer contains pattern-forming particles made of inorganic materials with a refractive index n of 3 or higher. The process of forming the protective layer includes: The process of supplying a protective layer forming composition onto the semiconductor substrate; and The process of curing the supplied protective layer with the composition. The process of forming the anti-counterfeiting layer includes: The process of supplying the composition for the anti-counterfeiting layer; and The process of curing the supplied anti-counterfeiting layer composition. (Appendix 5) According to the method for manufacturing a semiconductor device as described in Appendix 4, the semiconductor substrate is a wafer for a flip-chip semiconductor chip, and the protective layer is formed on the back side of the wafer. (Appendix 6) According to the semiconductor device manufacturing method described in Appendix 4 or 5, both the protective layer forming composition and the anti-counterfeiting layer composition are thermosetting compositions, and the steps of curing the anti-counterfeiting layer composition and curing the protective layer forming composition are performed simultaneously. (Appendix 7) According to the semiconductor device manufacturing method described in Appendix 4 or 5, both the protective layer forming composition and the anti-counterfeiting layer composition are energy-curable compositions, and the steps of curing the anti-counterfeiting layer composition and curing the protective layer forming composition are performed simultaneously. (Appendix 8) A method for determining the authenticity of a semiconductor device, comprising: The process of providing a genuine semiconductor device as described in Appendix 3; The genuine product data generation process includes photographing the anti-counterfeiting layer of the genuine product, thereby generating genuine product data displayed by the pattern-forming particles used to determine authenticity; and The determination process involves comparing the pattern used to determine the authenticity of the object with the data of a genuine product to determine whether the object is genuine. (Appendix 9) According to the method for determining the authenticity of a semiconductor device as described in Appendix 8, the authenticity data includes information showing the position and color of bright spots formed by the pattern forming particles as the pattern used to determine authenticity. (Appendix 10) A system for determining the authenticity of a semiconductor device, comprising: The genuine product data generation unit generates genuine product data based on the image data of the anti-counterfeiting layer of the genuine semiconductor device described in Appendix 3, which displays a pattern formed by the pattern forming particles for determining authenticity. The object data generation unit generates object data based on image data of the anti-counterfeiting layer of the object, displaying a pattern formed by the pattern forming particles for determining authenticity; and The comparison section compares the data of the genuine product with the data of the object to be judged, thereby determining whether the object to be judged is genuine. (Included for reference) This application claims priority based on Japanese patent application (JP2024-037376), the contents of which are incorporated herein by reference.

Claims

1. A composition for an anti-counterfeiting layer, used to form an anti-counterfeiting layer on a protective layer disposed on a semiconductor substrate, wherein, The anti-counterfeiting layer composition contains pattern-forming particles formed by inorganic materials with a refractive index n of 3 or higher.

2. The anti-counterfeiting layer composition according to claim 1, wherein, The pattern-forming particles are particles constructed by generating scattered light through Mie resonance.

3. A semiconductor device comprising a semiconductor substrate, a protective layer formed on the semiconductor substrate, and an anti-counterfeiting layer formed on the protective layer. The anti-counterfeiting layer contains pattern-forming particles made of inorganic materials with a refractive index n of 3 or higher.

4. A method for manufacturing a semiconductor device, comprising: The process of forming a protective layer on a semiconductor substrate; and In the process of forming an anti-counterfeiting layer on the protective layer, the anti-counterfeiting layer contains pattern-forming particles made of inorganic materials with a refractive index n of 3 or higher. The process of forming the protective layer includes: The process of supplying a protective layer forming composition onto the semiconductor substrate; and The process of curing the supplied protective layer with the composition. The process of forming the anti-counterfeiting layer includes: The process of supplying the composition for the anti-counterfeiting layer; and The process of curing the supplied anti-counterfeiting layer composition.

5. The manufacturing method according to claim 4, wherein, The semiconductor substrate is a wafer for flip-chip semiconductor chips, and the protective layer is formed on the back side of the wafer.

6. The manufacturing method according to claim 4, wherein, Both the protective layer forming composition and the anti-counterfeiting layer composition are thermosetting compositions, and the steps of curing the anti-counterfeiting layer composition and curing the protective layer forming composition are performed simultaneously.

7. The manufacturing method according to claim 4, wherein, Both the protective layer forming composition and the anti-counterfeiting layer composition are energy-curable compositions, and the process of curing the anti-counterfeiting layer composition and the process of curing the protective layer forming composition are performed simultaneously.

8. A method for determining the authenticity of a semiconductor device, comprising: The process of providing a genuine semiconductor device as described in claim 3; The genuine product data generation process includes photographing the anti-counterfeiting layer of the semiconductor device and generating genuine product data displayed by the pattern-forming particles used to determine authenticity; and The determination process involves comparing the pattern used to determine the authenticity of the object with the data of the genuine product to determine whether the object is genuine.

9. The method for determining the authenticity of a semiconductor device according to claim 8, wherein, The genuine product data includes information showing the position and color of the bright spots formed by the pattern-forming particles, which is used as the pattern for determining authenticity.

10. A system for determining the authenticity of a semiconductor device, comprising: The genuine product data generation unit generates genuine product data based on the image data of the anti-counterfeiting layer of the genuine semiconductor device as described in claim 3, which displays a pattern formed by the pattern forming particles for determining authenticity. The object data generation unit generates object data based on image data of the anti-counterfeiting layer of the object, displaying a pattern formed by the pattern forming particles for determining authenticity; and The comparison section compares the data of the genuine product with the data of the object to be judged, thereby determining whether the object to be judged is genuine.

11. A genuine product data generation apparatus, comprising the genuine product data generation unit used in the authenticity determination system of claim 10.

12. A device for determining authenticity, comprising the object data generation unit and the comparison unit used in the authenticity determination system of claim 10.

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